JP2003017666A - Semiconductor device manufacturing method, liquid crystal display device manufacturing method, and EL display device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, a method for manufacturing a liquid crystal display device, and a method for manufacturing an EL display device, which have a method for transferring a semiconductor element efficiently with a reduced manufacturing time. SOLUTION: A semiconductor element 10 is provided on an element forming substrate 110.
01, the step of bonding the surface of the element forming substrate 110 on the side where the semiconductor element 1001 is formed, and the intermediate support substrate 1003 having the opening 1004, and the step of forming the element forming substrate 110 by the semiconductor element 1001 A thinning step of thinning from the surface on the side not to be bonded, a bonding step of bonding the element forming substrate 110 to the first substrate 101 after the thinning step, and a stripping liquid introduced from the opening 1004 after the bonding step. Separating the intermediate support substrate 1003 from the element formation substrate 110.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, a method for manufacturing a liquid crystal display device, and a method for manufacturing an EL display device.

[0002]

2. Description of the Related Art Liquid crystal display (LCD), electro
A display device such as a luminescence (EL) display device and a plasma display can perform color display, and a display portion can be thin and lightweight.

Among these display devices, a thin film transistor (T) is used.
An active matrix type display using FT) as a pixel switching element is expected as a display with high image quality, high quality and low power consumption.

Therefore, these are highly demanded as display devices for office equipment, computers and the like, or display devices for portable information equipment which take advantage of their light weight and low power consumption.

At present, as a TFT for an active matrix type display, one using polycrystalline silicon (poly-Si) or amorphous silicon (a-Si) as an active layer is used. Since these TFTs have a high process temperature of about 300 ° C. or higher, they are formed on a glass substrate or the like.

However, since the glass substrate is not suitable for weight reduction and has low impact resistance, it cannot be said to be suitable for a display device of portable information equipment. Therefore, it is considered that the process temperature of the TFT is lowered to form it on the plastic substrate, or that the TFT is once formed on the glass substrate and then transferred to the plastic substrate.

A conventional TFT is formed on a glass substrate,
After that, about the method of transferring to a plastic substrate,
This will be described with reference to FIG.

As shown in FIG. 22A, first, the TFT 2202 is formed on the element forming substrate 2201.

Next, as shown in FIG. 22B, an intermediate support substrate 2204 is formed by using a temporary adhesive (temporary adhesive) 2203 for later peeling off the surface of the element formation substrate 2201 on which the TFT 2202 is formed. Glue to. An ultraviolet curable resin or the like is used as the temporary adhesive 2203, and after contacting these substrates,
Cure the temporary adhesive 2203 using an ultraviolet irradiation device,
Let it adhere.

Next, as shown in FIG. 22 (c), the element forming substrate 2201 is thinned by polishing it from the surface not adhered to the intermediate support substrate 2204 to a desired thickness by using a polishing device or the like.

Next, as shown in FIG. 22D, the polished surface of the element forming substrate 2201 and the plastic substrate 2
205 is adhered with an adhesive 2206 such as an ultraviolet curable resin.

Finally, as shown in FIG. 22 (e), the temporary adhesive 2
The intermediate support substrate 2204 is prepared by immersing 203 in a stripping solution.
Peel off.

However, in this conventional transfer method,
There are some problems.

First, when the element forming substrate 2201 and the intermediate supporting substrate 2204 are bonded together, the temporary adhesive 2203 is in a state where it is not cured, as shown in FIG. 22 (b). Therefore, it is difficult to form a uniform space between the element formation substrate 2201 and the intermediate support substrate 2204, and these two substrates may be bonded in a non-parallel state as shown in FIG. there were.

If these two substrates are not parallel to each other, when the element formation substrate 2201 is polished from the surface which is not adhered to the intermediate support substrate 2204 to form a thin film, as shown in FIG.
As shown in (b), a thin region and a thick region of the element formation substrate 2201 are formed. In order to reduce the thickness of the element formation substrate 2201 to be uniform, it is necessary to grind little by little and repeat the process of measuring the thickness of the element formation substrate 2201. there were.

Secondly, when the element formation substrate 2201 and the intermediate support substrate 2204 are peeled off, the temporary adhesive 2203 is swollen in a peeling solution, and the peeling solution at this time is
Permeates only from the periphery of both substrates. Therefore, it takes a long time for the intermediate support substrate 2204 to be completely peeled off, which causes a problem of a long manufacturing time.

[0017]

As described above, when a semiconductor element such as a TFT is formed on a lightweight substrate such as a plastic, the semiconductor element is first formed on a substrate such as glass and then transferred to a plastic substrate. The method of doing it was considered. However, the conventional method has a problem that the process time is long.

Therefore, in the present invention, in consideration of the above problems, a manufacturing method of a semiconductor device, a manufacturing method of a liquid crystal display device, and an EL display device, which has a manufacturing time shortened and has an efficient transfer method of a semiconductor element. It aims at providing the manufacturing method of.

[0019]

Therefore, the present invention provides a step of forming a semiconductor element on an element formation substrate, a surface of the element formation substrate on which the semiconductor element is formed, and an intermediate support substrate having an opening. A step of adhering the element forming substrate, a thinning step of thinning the element forming substrate from the surface where the semiconductor element is not formed, an adhering step of adhering the element forming substrate to the first substrate after the thinning step, and an adhering step of After that, a step of introducing a stripping solution from the opening to strip the intermediate support substrate from the element formation substrate is provided.

Further, according to the present invention, a step of forming a groove having a predetermined depth on one surface of an element formation substrate on which a semiconductor element is formed, a step of adhering an intermediate support substrate to the surface of the element formation substrate, and a surface of the element formation substrate. And a step of thinning the element formation substrate from a surface opposite to the step of separating the element formation substrate into a plurality of partial substrates by a groove, a bonding step of bonding one of the separated partial substrates to the first substrate, and a bonding step after the bonding step. And a step of peeling the intermediate support substrate from the partial substrate.

Further, according to the present invention, the step of forming a semiconductor element on the element forming substrate, the surface of the element forming substrate on which the semiconductor element is formed, and the outside of the area corresponding to the area where the semiconductor element is formed are provided. A step of adhering an intermediate support substrate having a groove, a thinning step of thinning the element forming substrate from the surface on which the semiconductor element is not formed, and an element forming substrate being adhered to the first substrate after the thinning step A bonding step, and a step of peeling the intermediate support substrate from the element forming substrate after the bonding step,
A method for manufacturing a semiconductor device, comprising:

In the present invention, the semiconductor element is pol.
A thin film transistor using y-Si or a-Si may be included.

Further, in the present invention, the first substrate may be a resin substrate.

In the present invention, when thinning the element forming substrate, the element forming substrate may be thinned by polishing.

Further, according to the present invention, a step of forming a semiconductor element on the element forming substrate, a step of adhering a surface of the element forming substrate on which the semiconductor element is formed, and an intermediate supporting substrate having an opening, A thinning step of thinning the element formation substrate from the surface on which the semiconductor element is not formed, an adhesion step of adhering the element formation substrate to the first substrate after the thinning step, and a peeling liquid from the opening after the adhesion step. To remove the intermediate support substrate from the element formation substrate, a step of forming a counter electrode on the second substrate, a surface of the first substrate on which the element formation substrate is bonded, And a step of facing the surface of the substrate on which the counter electrode is formed and injecting liquid crystal between them to seal the liquid crystal display device. .

Further, according to the present invention, a step of forming a groove having a predetermined depth on one surface of an element formation substrate on which a semiconductor element is formed, a step of adhering an intermediate support substrate to the surface of the element formation substrate, and a surface of the element formation substrate And a step of thinning the element formation substrate from a surface opposite to the step of separating the element formation substrate into a plurality of partial substrates by a groove, a bonding step of bonding one of the separated partial substrates to the first substrate, and a bonding step after the bonding step. A step of separating the intermediate support substrate from the partial substrate, a step of forming a counter electrode on the second substrate, a surface of the first substrate on which the partial substrate is bonded, and a counter electrode of the second substrate are formed. And a step of making the surface on the opposite side face to face each other, and injecting a liquid crystal between them to seal the liquid crystal display apparatus.

Further, according to the present invention, the step of forming a semiconductor element on the element forming substrate, the surface of the element forming substrate on which the semiconductor element is formed, and the outside of the area corresponding to the area where the semiconductor element is formed are provided. A step of adhering an intermediate support substrate having a groove, a thinning step of thinning the element forming substrate from the surface on which the semiconductor element is not formed, and an element forming substrate being adhered to the first substrate after the thinning step A bonding step, and a step of peeling the intermediate support substrate from the element forming substrate after the bonding step,
A step of forming a counter electrode on the second substrate, and a surface of the first substrate on which the element formation substrate is bonded and a surface of the second substrate on which the counter electrode is formed are opposed to each other, And a step of injecting a liquid crystal between them to seal the liquid crystal display apparatus.

The present invention also includes a step of forming a semiconductor element on the element forming substrate, and a step of adhering a surface of the element forming substrate on which the semiconductor element is formed and an intermediate supporting substrate having an opening. A thinning step of thinning the element formation substrate from the surface on which the semiconductor element is not formed, an adhesion step of adhering the element formation substrate to the first substrate after the thinning step, and a peeling liquid from the opening after the adhesion step. To remove the intermediate support substrate from the element formation substrate, a step of forming a transparent electrode layer on the second substrate, a step of forming a light emitting layer on the transparent electrode layer, and an electrode on the light emitting layer. A step of forming a layer, and
And a step of making the surface of the substrate on which the element forming substrate is adhered face the surface of the second substrate on which the electrode layer is formed,
There is provided a method for manufacturing an EL display device, which comprises:

Further, according to the present invention, a step of forming a groove having a predetermined depth on one surface of an element formation substrate on which a semiconductor element is formed, a step of adhering an intermediate support substrate to the surface of the element formation substrate, and a surface of the element formation substrate. And a step of thinning the element formation substrate from a surface opposite to the step of separating the element formation substrate into a plurality of partial substrates by a groove, a bonding step of bonding one of the separated partial substrates to the first substrate, and a bonding step after the bonding step. A step of peeling the intermediate support substrate from the partial substrate, a step of forming a transparent electrode layer on the second substrate,
A step of forming a light emitting layer on the transparent electrode layer, a step of forming an electrode layer on the light emitting layer, a surface of the first substrate on which the partial substrate is bonded, and an electrode layer of the second substrate are formed And a step of making the surface on the opposite side face opposite each other.
A method for manufacturing an L display device is provided.

Further, according to the present invention, the step of forming a semiconductor element on the element formation substrate, the surface of the element formation substrate on which the semiconductor element is formed, and the outside of the area corresponding to the area where the semiconductor element is formed are provided. A step of adhering an intermediate support substrate having a groove, a thinning step of thinning the element forming substrate from the surface on which the semiconductor element is not formed, and an element forming substrate being adhered to the first substrate after the thinning step A bonding step, and a step of peeling the intermediate support substrate from the element forming substrate after the bonding step,
The step of forming a transparent electrode layer on the second substrate, the step of forming a light emitting layer on the transparent electrode layer, the step of forming an electrode layer on the light emitting layer, and the element forming substrate of the first substrate are bonded. And a surface of the second substrate opposite to the surface of the second substrate on which the electrode layer is formed are opposed to each other.

[0031]

Embodiments of the present invention will be described in detail below with reference to the drawings, but the present invention is not limited to these embodiments.

(First Embodiment) First, a first embodiment of the present invention will be described. This embodiment is poly-S.
After forming an array of TFTs of i on the element formation substrate and adhering it to the intermediate support substrate, thinning the element formation substrate,
This is adhered to the first substrate, and the intermediate support substrate is peeled off.
Then, the liquid crystal display device is made to face a counter substrate (second substrate), liquid crystal is injected between both substrates, and sealed to form a liquid crystal display device.

FIG. 1 is a sectional view of the liquid crystal display device of this embodiment.
The configuration of the liquid crystal display device of the present embodiment will be described with reference to FIG.

In the liquid crystal display device of this embodiment, as shown in FIG. 1, an adhesive 109, a thinned element forming substrate 110, and an insulating film 111 are laminated on a first substrate 101, and a semiconductor is formed thereon. Elements and the like are formed. Semiconductor elements and the like on the insulating film 111 are divided into a pixel region and a peripheral drive circuit region, and have different configurations.

In the pixel area, for example, an n-type TF is provided for each pixel.
The pixel electrode 103 and the auxiliary capacitor 120 connected to T102 are provided. This auxiliary capacitance 120 is the TFT 1
02, the lower electrode 118 connected to the active layer 112, the gate insulating film 113, and the upper electrode 119. A protective film 117 is provided over each pixel, and a second substrate 106 on which a counter electrode 121 is formed with a liquid crystal layer 104 interposed therebetween is provided. A black matrix 105 is provided in a region of the second substrate 106 corresponding to the TFT 102 formation region.

The n-type TFT 107 is provided in the peripheral drive circuit area.
A CMOS circuit in which the p-type TFT 108 and the p-type TFT 108 are paired is provided.

TFT 102, n-type TFT 107, p-type T
The configuration of the FT 108 will be described. These are insulating film 1
A patterned active layer 112 is provided on the gate electrode 11, and a gate insulating film 113 is provided on the entire surface thereof.
A patterned gate electrode 114 is provided on the gate insulating film 113, and a first interlayer insulating film 115 is provided on the entire surface thereof. In the region corresponding to the active layer 112,
Contact holes are opened by patterning the first interlayer insulating film 115 and the gate insulating film 113, and source / drain electrodes 116 connected to the active layer 112 through the contact holes are provided. Source of TFT 102
One of the drain electrodes 116 has a first interlayer insulating film 115.
It is connected to the upper pixel electrode 103.

Next, a method of forming the TFT 102, the pixel electrode 103 and the auxiliary capacitance 120 of the liquid crystal display device of this embodiment on the element formation substrate will be described with reference to FIGS. 2 to 9. In this description, one TFT is taken out for description, but in reality, it may be formed in a predetermined arrangement on the entire surface.

First, as shown in FIG. 2, a film having a thickness of about 100 nm is formed on a device forming substrate 110 made of quartz, glass, silicon or the like having a thickness of about 0.7 mm by a sputtering method, a plasma CVD method or the like. The insulating film 111 is formed on the entire surface. On this insulating film 111, MoW, MoTa, Ta, W or the like is formed over the entire surface to a thickness of about 100 nm by a sputtering method or the like, and patterned into a predetermined shape by a photolithography method or the like to form a lower electrode 118. .

Next, as shown in FIG. 3, a lower electrode 118 is formed on the a-Si film 112 containing about 1 × 10 ²² pieces / cm ³ of H by using a plasma CVD method, an LPCVD method or the like. Approximately 50 to 8 over the entire surface of the insulating film 111.
It is formed to have a thickness of 0 nm. And this a-
About 1 at a temperature of about 450 to 550 ° C. for the Si film 112.
Thermal annealing is applied for ~ 5 hours, and the amount of hydrogen in the film is about 1 x 10
Dehydrogenation in the a-Si film 112 is performed so that the number is ²⁰ / cm ³ or less. Note that the dehydrogenation step can be omitted by setting the amount of hydrogen in the film when the a-Si film 112 is formed in advance to about 1 × 10 ²⁰ hydrogen atoms / cm ³ or less.

Next, the a-Si film 112 is poly-Si (crystallized) by excimer laser annealing or the like.
To do. In order to omit the step of forming poly-Si, the poly-Si film may be directly formed by a plasma CVD method using SiH ₄ , SiF ₄ and H ₂ when forming the film. This poly-Si film 112 is patterned into a predetermined shape to form an active layer 112. At the time of patterning, the active layer 112 and the lower electrode 118 are overlapped with each other.

Next, as shown in FIG. 4, a gate insulating film 113 and a silicon oxide film are formed on the insulating film 111 on which the active layer 112 and the lower electrode 118 are formed by the APCVD method, the PECVD method, the ECR-PECVD method or the like. , A silicon nitride film or the like is formed over the entire surface to a thickness of about 70 to 100 nm.

Next, as shown in FIG. 5, the gate insulating film 1
A gate electrode 114 and an upper electrode 119 are formed by forming Mo, Al, Ta, W, Cu, an alloy thereof, a laminated film, or the like on the entire surface by sputtering or the like and patterning by photolithography. To do. The film thickness may be about 200 to 400 nm.

Using the gate electrode 114 as a mask, the source / drain region of the active layer 112 is doped with, for example, 1 × 10 ²² phosphorus / cm ³ as an impurity in the case of an n-type TFT.
About 1 × 10 ²² boron / c for p-type TFT
About m ^{3 is} introduced by an ion implantation method or an ion doping method.

Next, as shown in FIG. 6, the gate electrode 11
4 and the upper electrode 119 are formed on the gate insulating film 113, APCVD method, PECVD method, ECR-PECVD method.
A silicon oxide film, a silicon nitride film, or a laminated film thereof is formed on the entire surface by a method such as
Set to 5. The film thickness may be about 400 nm.

Next, in order to activate the impurities implanted into the source / drain regions of the active layer 112 and lower the resistance, excimer laser annealing or about 450 to 550 ° C. is performed.
Thermal annealing is performed.

Next, as shown in FIG. 7, ITO is formed on the entire surface of the first interlayer insulating film 115 by sputtering or the like so as to have a thickness of about 100 to 200 nm, and is patterned by photolithography. As a result, the pixel electrode 103 is formed.

Next, as shown in FIG. 8, the pixel electrode 103
A resist (not shown) is applied on the first interlayer insulating film 115 on which the film has been formed, and is patterned by using a photolithography method. Then, by etching the first interlayer insulating film 115 and the gate insulating film 113, contact holes are opened in the source / drain regions of the active layer 112.

Next, as shown in FIG. 9, M is formed over the entire surface of the first interlayer insulating film 115 having contact holes.
About 30 using o, Al, W, Cu and their alloys, or a laminated film, or a silicon film doped with phosphorus, etc.
The source / drain electrode 116 is formed by forming the film to have a thickness of 0 to 600 nm by a sputtering method or the like and patterning it by using a photolithography method. The source / drain electrodes 116 are connected to the active layer 112 via the contact holes.

On the first interlayer insulating film 115 on which the source / drain electrodes 116 are formed, an APCVD method or a PEC method is used.
A silicon oxide film, a silicon nitride film, or a laminated film of these is formed over the entire surface by a VD method, an ECR-PECVD method, or the like to form a protective film 117. The film thickness may be about 400 nm.

The TFT 102 may be formed without the auxiliary capacitance 120.

In addition, the n-type TFT 107 and the p-type TFT 10
When forming 8, the auxiliary capacitor and the pixel electrode 103 may be formed in the same manner without forming. Furthermore, the n-type TFT 107
Where before you do the boron doping,
At the place where the p-type TFT 108 is to be formed, a mask is formed by a resist before doping phosphorus,
Take measures to prevent the implantation of ions.

Further, these TFTs may have an LDD structure in order to reduce the leakage current, and a coplanar TF.
Instead of T, a stagger type TFT may be used.

Next, referring to FIGS. 10 to 13, after transferring the element formed on the element forming substrate and described in FIGS. 2 to 9 to the intermediate support substrate, the element forming substrate is thinned,
A method of adhering this to the first substrate and peeling the intermediate support substrate will be described. In this description, these elements formed in the pixel area and the peripheral drive circuit area are referred to as a semiconductor element 1001, and details thereof will be omitted.

First, as shown in FIG. 10, on the surface of the element formation substrate 110 on which the semiconductor element 1001 is provided, a temporary adhesive 1002 using a photo-curing resin such as K82 manufactured by ADELL Co. is used. It is applied or spin-coated to face the intermediate support substrate 1003. Then, it is cured by being irradiated with ultraviolet rays, and the two substrates are bonded. In addition, temporary adhesive 1
002 is a temporary adhesive, and both substrates are peeled off later.

Although not described in FIGS. 2 to 9, a groove is provided on the surface of the element formation substrate 110 on the side where the semiconductor element 1001 is formed, outside the region where the semiconductor element 1001 is formed. deep.

Further, an opening 1004 is provided in a region of the intermediate support substrate 1003 corresponding to the region where the semiconductor element 1001 is formed. The shape of this opening 1004 is shown in FIG.
As shown in FIG. 14, which is a plan view seen from the direction of the arrow 0, stripes may be formed.

The opening 1004 is provided in order to increase the contact area between the peeling liquid and the temporary adhesive 1002 in the peeling step described later. Therefore, the shape of the opening 1004 may be any shape as long as it is easy to introduce the stripping solution, and may be not only the stripe shape but also the lattice shape. In addition, the area of the opening 1004 may be set so that the intermediate supporting substrate 1003 can be sufficiently adhered to the element formation substrate 110 and the peeling liquid can be sufficiently introduced from the opening 1004 and sufficiently contact with the temporary adhesive 1002. . In this embodiment, the width of each stripe is about 2 mm, and the interval between each stripe is about 2 mm.
And However, this may be determined depending on the properties of the temporary adhesive and the like, and at least one opening 1004 is provided.

Next, as shown in FIG. 11, the element formation substrate 110 is thinned from the surface not bonded to the intermediate support substrate 1003 by polishing with a polishing apparatus. that time,
Since the groove is formed in the element forming substrate 110, when the thinning progresses to about the depth of the groove, the end portion (partial substrate) 1005 can be naturally taken from the element forming substrate (partial substrate) 110. By thus providing the groove in the element forming substrate 110, it becomes easy to determine whether or not the desired thickness is reached when the element forming substrate 110 is thinned. Therefore, the depth of the groove formed in the element forming substrate 110 is preferably about the desired thickness when the element forming substrate 110 is thinned, and is preferably about 50 μm or less. A particularly preferred thickness is about 5 μm or less. Further, by providing this groove not only at one end around the formation region of the semiconductor element 1001 but also at a plurality of ends, whether or not the end portions 1005 can be formed at the same time determines whether or not thinning is uniformly performed on the entire substrate. You can also judge. Therefore, it is possible to efficiently thin the element formation substrate 110. The thinning may be finished when the end 1005 is removed, or the thinning may be further progressed after confirming that the end 1005 is removed.

Next, as shown in FIG. 12, the thinned element forming substrate 110 is adhered to the first substrate 101 using an adhesive 109. As the adhesive 109, an ultraviolet curable resin, an epoxy adhesive or the like may be used.

Next, as shown in FIG. 13, the temporary adhesive 1002 is dissolved or swelled by immersing the adhered substrate in a stripping solution such as water, ethanol, or a mixture thereof. Let the intermediate support substrate 1003
The first substrate 101 and the semiconductor element 1001 on the first substrate 101.
Peel from. At that time, the peeling liquid for swelling or dissolving the temporary adhesive 1002 is not only applied from between the first substrate 101 and the intermediate supporting substrate 1003, but also to the intermediate supporting substrate 10.
It also enters from the opening 1004 of 03. Therefore, the temporary adhesive 10
The contact area between 02 and the stripper becomes large. Therefore, it can be said that the time for peeling the intermediate support substrate 1003 is shorter than in the conventional case, which is preferable. As the stripping solution, the first substrate 1
Any material can be used as long as it can dissolve the temporary adhesive 1002 without damaging 01. Further, the number and shape of the openings 1004 may be any as long as the contact area between the temporary adhesive 1002 and the peeling liquid increases.

As shown in FIG. 15A, a groove may be provided on the surface of the intermediate support substrate 1003 on the side in contact with the semiconductor element 1001 outside the area corresponding to the area where the semiconductor element 1001 is formed. good. When the intermediate support substrate 1003 and the element forming substrate 110 on which the semiconductor element 1001 is formed are adhered, the temporary adhesive 1002 penetrates by a capillary phenomenon. Therefore, by forming a groove, the temporary adhesive 1002 reaches beyond the groove. Does not penetrate. Therefore, the area bonded by the temporary adhesive 1002 becomes narrow. As shown in FIG. 15B, the element forming substrate 110 is thinned and the thin film is formed on the first substrate 101.
When the temporary adhesive 1002 is melted after being adhered to and the intermediate support substrate 1003 is peeled off, since the area adhered by the temporary adhesive 1002 is small, it takes a short time to melt the temporary adhesive 1002. The time can be shortened.

Further, as shown in FIG. 16A, when the thinned element forming substrate 110 and the first substrate 101 are adhered by the adhesive 109, the adhesive 109 protrudes, so that the intermediate support substrate 1003. And the first substrate 101 may be bonded to each other, which is not preferable. Therefore, as shown in FIG. 16B, the element forming substrate 110 and the first substrate 101 have the same size, or
As shown in (c), the element formation substrate 110 and the intermediate support substrate 1
003 and the size of the intermediate support substrate 100 are the same.
3 is not adhered to the first substrate 101, which is preferable. Element formation substrate 110 and intermediate support substrate 10
03 and the first substrate 101 may have the same size.

Next, with reference to FIG. 1, a process of forming a cell in the liquid crystal display device of this embodiment will be described.

As shown in FIG. 1, Cr is formed on the entire surface of the second substrate 106 by a sputtering method or the like, and patterned to prevent a leak current caused by light and deterioration of the TFT 102, which is a light shielding layer. A black matrix 105 is provided. ITO is formed on the entire surface of the second substrate 106 on which the black matrix 105 is formed by a sputtering method or the like, and the counter electrode 121 is provided.

Next, the surface of the second substrate 106 on the side where the black matrix 105 and the counter electrode 121 are formed, and the pixel region of the first substrate 101 where the TFT 102, the pixel electrode 103 and the auxiliary capacitance 120 are formed. To face each other, and the liquid crystal 104 is injected and sealed, and wiring in the peripheral drive circuit region is performed to complete the liquid crystal display device of this embodiment.

In this embodiment, a groove is provided on the surface of the element formation substrate on which the semiconductor element is formed. By forming this groove, when thinning the element formation substrate, both sides sandwiching this groove are separated, so that it can be seen that the thickness of the element formation substrate is about the depth of this groove. Therefore, since this groove can be used as a marker as to whether or not the element formation substrate has reached a desired thickness, the thickness can be easily controlled, and the thinning process can be performed efficiently and in a short time. It becomes possible. Further, by providing this groove not only at one end but also at a plurality of ends around the element formation substrate, it becomes easy to judge whether or not thinning is performed uniformly. When multiple grooves are formed and their depths are constant, if the thinning is uneven, both sides of the groove at one end of the element formation substrate should be separated, but not both sides of the groove at the other end. Therefore, it can be used as a criterion for judging the uniformity of thinning. Therefore, in this case, since it becomes easy to control the uniformity of thinning of the element formation substrate, it is possible to efficiently perform the uniform thinning process in a short time.

The thickness of the element forming substrate is preferably about 1.1 mm or less, and more preferably about 0.5 mm or less in order to shorten the time of the subsequent thinning process.

Further, in this embodiment, an opening is provided in the intermediate support substrate. By providing the opening in the intermediate support substrate, when the intermediate support substrate is peeled off, penetration of the peeling liquid is promoted, and the time for the step of peeling the intermediate support substrate is shortened. That is, since the peeling liquid that swells or dissolves the temporary adhesive enters not only between the first substrate and the intermediate supporting substrate but also through the opening of the intermediate supporting substrate, The contact area becomes large, and the intermediate support substrate can be peeled off in a short time.

Instead of providing the opening in the intermediate support substrate, a groove may be provided on the surface of the intermediate support substrate on the side in contact with the semiconductor element, outside the region corresponding to the region where the semiconductor element is formed. When the intermediate support substrate and the element formation substrate on which the semiconductor element is formed are bonded together, the temporary adhesive agent enters from the outside by a capillary phenomenon, so that the groove is formed so that the temporary adhesive agent does not penetrate to the inside of the groove. Therefore, the area bonded by the temporary adhesive becomes narrow. When the temporary adhesive is melted by the peeling solution and the intermediate support substrate is peeled, the time for melting the temporary adhesive is shortened, so that the preparation time can be shortened.

In order to reduce the weight of the liquid crystal display device, it is necessary to reduce the weight of the substrate, but many lightweight substrates cannot withstand high temperatures. However, in the present embodiment, since the TFT is formed on the element formation substrate and transferred to the first substrate, the first substrate can be a lightweight resin substrate that cannot withstand high temperatures. is there. In this embodiment, polyimide, nylon, polyethylene,
Polyester, polycarbonate, methacrylic resin, P
It is also possible to use a resin substrate such as ET or PES as the first substrate.

In this embodiment, as described above, T
After the FT is formed, the transfer process is performed. Therefore, since there is no limitation on the process temperature in the manufacturing process, it is possible to use a TFT that uses poly-Si or a-Si that requires a high process temperature as an active layer. poly-
When a TFT having Si as an active layer is used, not only the TFT in the pixel region but also the TFT in the peripheral drive circuit region can be formed in the same step, which is preferable.

(Second Embodiment) Next, a second embodiment of the present invention will be described. In this embodiment, the poly-
After forming an array of Si TFTs on an element formation substrate and adhering it to an intermediate support substrate, thinning the element formation substrate, adhering this to the first substrate, and peeling the intermediate support substrate, It is similar to the first embodiment, but differs from the first embodiment in that an EL display device is formed instead of the liquid crystal display device. The description of this embodiment will be focused on the points that are different from the first embodiment, and the description of the same points as the first embodiment will be omitted.

FIG. 1 is a sectional view of the EL display device of this embodiment.
7, and the configuration of the EL display device of the present embodiment will be described using this.

As shown in FIG. 17, the EL display device of this embodiment is similar to the first embodiment in that it is divided into a pixel region and a peripheral drive circuit region, and a semiconductor element formed in each region. The same as in the first embodiment. The configuration is different from that of the first embodiment above the first interlayer insulating film 115 in the pixel region. A structure above the first interlayer insulating film 115 in the pixel region will be described.

First interlayer insulating film 115 and gate insulating film 1
A contact hole is provided in the region corresponding to the active layer 112. Then, the source / drain electrode 11 connected to the active layer 112 through the contact hole.
6 is provided. A second interlayer insulating film 1701 is provided on the entire surface thereof.

A contact hole is provided in a region of the second interlayer insulating film 1701 corresponding to one of the source / drain electrodes 116. Then, the second interlayer insulating film 1701
A connection electrode 1702, which is connected to one of the source / drain electrodes 116 through the contact hole, is provided thereon.

A protective electrode layer 1703 connected to the connection electrode 1702 and an electrode layer 1704 on the protective electrode layer 1703 are provided for each pixel on the second interlayer insulating film 1701, and light is emitted on the electrode layer 1704. A layer 1705, a transparent electrode layer 1706, and a transparent substrate (second substrate) 1707 are stacked.

Next, the TF of the EL display device of this embodiment is
A method of forming T102 on the element formation substrate will be described with reference to FIG. n-type TFT 107 and p-type TFT 108
May be formed similarly to the first embodiment.

First, the insulating film 11 is formed on the element forming substrate 110.
The steps from the step of forming 1 to the step of forming the first interlayer insulating film 115, activating the impurities in the active layer 112, and reducing the resistance may be performed in the same manner as in the first embodiment.

Next, a resist (not shown) is applied and patterned on the first interlayer insulating film 115. And
By etching the first interlayer insulating film 115 and the gate insulating film 113, contact holes are opened in the source / drain regions of the active layer 112.

Next, on the first interlayer insulating film 115 having the contact holes opened, Mo, Al, W, Cu and their alloys, or a laminated film, or a silicon film doped with phosphorus or the like is used. The source / drain electrodes 116 are formed by forming and patterning so as to have a thickness of about 300 to 600 nm. The source / drain electrodes 116 are formed on the active layer 112 through the contact holes.
Connect with.

Next, a second interlayer insulating film 1701 which also serves as a flattening film is formed by using a silicon oxide film or the like for about 200
It is formed on the entire surface by a spin-on-glass method or the like so as to have a film thickness of 400 nm. Then, the second interlayer insulating film 1701
A resist (not shown) is applied over the entire surface, patterning is performed, and then etching is performed to form a second interlayer insulating film 170.
A contact hole is opened in the region 1 corresponding to one of the source / drain electrodes 116.

Next, a connection electrode 1702, which is connected to one of the source / drain electrodes 116 through this contact hole, is formed on the second interlayer insulating film 1701.

This connection electrode 1702 is used for connection with an EL formation substrate which will be described later. Since the light emitting layer of this EL formation substrate is weak against heat, Ni using electroless plating with low connection temperature, electroplating or It is preferable to use Cu or the like using electroless plating. Also, this connection electrode 1702
Needs to be smaller than the pixel pitch, and if the size of one pixel is about 150 μm × about 100 μm, it needs to be smaller than that. If the size of the connection electrode 1702 is about 1 μm to 50 μm, there is no short circuit with the connection electrode 1702 of the adjacent pixel and the alignment accuracy can be loosened, which is preferable.

After the semiconductor element is formed on the element forming substrate in this manner, it is adhered to the intermediate supporting substrate to make the element forming substrate thin, then this is adhered to the first substrate, and the intermediate supporting substrate is peeled off. The steps may be performed in the same manner as in the first embodiment, and description thereof will be omitted.

Next, with reference to FIGS. 18 to 21, a method for forming an EL formation substrate provided with an EL element in which a light emitting layer is sandwiched between electrode layers will be described.

First, as shown in FIG. 18, IT is formed on a transparent substrate 1707 made of an insulating visible light transmitting material.
Transparent electrode layer 1 made of a conductor that transmits visible light such as O
706 to about 50-200 nm, preferably about 100 n
It is formed to have a film thickness of m. This transparent electrode layer 170
When forming 6 with ITO, a thermal process of about 230 ° C. is performed.

Next, the transparent substrate 1707 on which the transparent electrode layer 1706 is formed is put into a vacuum apparatus, and as shown in FIG. 19, the light emitting layer 1705 is formed on the entire surface of the transparent electrode layer 1706. The light-emitting layer 1705 may be a single layer formed of a p-quarterphenyl derivative or the like, but if it has a three-layer structure of a hole-injection layer formed of a triazole derivative or the like, a light-emitting layer, and an electron-injection layer formed of 8-hydroxyquinoline or the like, It is preferable because the luminous efficiency becomes high. When the light emitting layer is a single layer, the thickness is preferably about 5 nm to 5 μm. Further, in the case of having a three-layer structure of a hole injection layer, a light emitting layer, and an electron injection layer, it is preferable that each film thickness is about 5 nm to 5 μm, and more preferably about 10 nm to 1 μm.

The process after the formation of the light emitting layer 1705 is preferably performed in vacuum. Further, before forming the light emitting layer 1705 by a vacuum process, the transparent substrate 1707 on which the transparent electrode layer 1706 is formed may be subjected to cleaning treatment with ozone and ultraviolet rays in a vacuum. Since the light emitting layer 1705 is weak against acid, alkali, heat, etc., the light emitting layer 17
The process after 05 formation needs to be performed under mild conditions.

Next, as shown in FIG. 20, the electrode layer 170
4 is vapor-deposited using MgAg, LiF / Al, LiAl, Ag or the like so as to have a film thickness of about 100 nm. At this time, the mask 2001 is used to separate the electrode layer 1704 into pixels.

Next, as shown in FIG. 21, the protective electrode layer 170 for protecting the electrode layer 1704 is provided on the electrode layer 1704 while using the mask 2001 for pixel separation.
3 is vapor-deposited using Al, Au or the like so as to have a film thickness of about 100 nm to complete an EL formation substrate.

Next, referring to FIG. 17, the EL of the present embodiment will be described.
A process of forming a cell in the display device will be described.

As shown in FIG. 17, the EL of the EL formation substrate
The surface on which the element is formed and the TFT 1 of the first substrate 101
02, the pixel electrode 103, and the pixel region in which the auxiliary capacitance 120 is formed are opposed to each other and bonded. At that time, the first semiconductor element was formed in a vacuum holding the EL formation substrate.
The substrate 101 is put in, and the connection electrode 1702 is warmed by a heater on which the first substrate 101 is placed, connected to the protective electrode layer 1703, and sealed. Here, the bonding portion 1708 may be vacuumed or may be filled with nitrogen. Alternatively, it may be filled with an adhesive or the like. After that, wiring in the peripheral drive circuit region is performed to complete the EL display device of this embodiment.

Also in this embodiment, since the semiconductor element is transferred to the first substrate by the transfer step as in the first embodiment, the process temperature of the step of forming the semiconductor element is equal to the heat resistant temperature of the first substrate and It may be higher than the heat resistant temperature of the light emitting layer.

Therefore, p which requires a high process temperature
A TFT using oli-Si or a-Si as an active layer can be used, and the first substrate can be a lightweight resin substrate. Since many lightweight substrates cannot withstand high temperatures, it is preferable to obtain a good transfer process as in this embodiment. When using a TFT having poly-Si as an active layer, the TFT in the pixel region is used.
Not only this, but also the TFTs in the peripheral drive circuit region can be formed in the same step, which is preferable.

Further, in this embodiment, the light-emitting layer 1705 which is weak against heat is formed by the transparent electrode layer 1706 which requires a heating process.
The formation of the TFT 102, which is performed after the formation of the TFT and requires a heating step, is also performed separately from the formation of the EL formation substrate. Further, the protection electrode layer 1703 of the EL formation substrate and the connection electrode 1702 of the first substrate 101 on which the semiconductor element is formed can be connected at a relatively low temperature. Therefore, in this embodiment, the heat-sensitive light emitting layer 1705 can be formed without deterioration, which is preferable. In particular, even if an organic material as shown in (Chemical formula 1) to (Chemical formula 6), which is weak against heat, is used as the light emitting layer 1705, it does not deteriorate in the formation stage and is preferable EL.
A display device can be obtained.

[0098]

[Chemical 1]

[Chemical 2]

[Chemical 3]

[Chemical 4]

[Chemical 5]

[Chemical 6]

[0099]

As described in detail above, according to the present invention,
It is possible to provide a method for manufacturing a semiconductor device, a method for manufacturing a liquid crystal display device, and a method for manufacturing an EL display device, which has a shortened manufacturing time and an efficient method for transferring a semiconductor element.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 9 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 11 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 14 is a plan view showing a step of the method of manufacturing the liquid crystal display device according to the first embodiment of the present invention.

15A and 15B are cross-sectional views showing one step of a method for manufacturing a liquid crystal display device according to a modification of the first embodiment of the present invention.

16 (a), (b) and (c) are cross-sectional views illustrating a method for manufacturing a liquid crystal display device according to another modification of the first embodiment of the present invention.

FIG. 17 is a sectional view of an EL display device according to a second embodiment of the present invention.

FIG. 18 is a cross-sectional view showing a step of the method of manufacturing the EL display device according to the second embodiment of the present invention.

FIG. 19 is a cross-sectional view showing one step of a method of manufacturing an EL display device according to the second embodiment of the present invention.

FIG. 20 is a cross-sectional view showing a step of the method of manufacturing the EL display device according to the second embodiment of the present invention.

FIG. 21 is a cross-sectional view showing a step of the method of manufacturing the EL display device according to the second embodiment of the present invention.

22 (a), (b), (c), (d), (e)
Both are cross-sectional views showing one step of a conventional method for transferring a semiconductor device.

FIG. 23A and FIG. 23B are cross-sectional views showing one step of a conventional transfer method for a semiconductor device.

[Explanation of symbols]

101 ... First substrate 102, 2202 ... TFT 103 ... Pixel electrode 104 ... Liquid crystal layer 105 ... Black matrix 106 ... Second substrate 107 ... n-type TFT 108 ... p-type TFT 109, 2206 ... Adhesive 110, 2201 ... Element formation substrate 111 ... Insulating film 112 ... Active layer 113 ... Gate insulating film 114 ... Gate electrode 115 ... First interlayer insulating film 116 ... Source / drain electrodes 117 ... Protective film 118 ... Lower electrode 119 ... Upper electrode 120 ... auxiliary capacity 121 ... Counter electrode 1001 ... Semiconductor element 1002, 2203 ... Temporary adhesive 1003, 2204 ... Intermediate support substrate 1004 ... Opening 1005 ... edge 1701 ... Second interlayer insulating film 1702 ... Connection electrode 1703 ... Protective electrode layer 1704 ... Electrode layer 1705 ... Light emitting layer 1706 ... Transparent electrode layer 1707 ... Transparent substrate 1708 ... Joint 2001 ... Mask 2205 ... Plastic substrate

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G09F 9/30 365 G09F 9/30 365Z 9/35 9/35 H01L 21/336 H01L 29/78 626C 29 / 786 627D F term (reference) 2H092 GA59 GA60 MA01 MA31 MA37 NA27 5C094 AA15 AA43 BA03 BA27 BA43 CA19 DA09 DA12 DA13 DB01 DB04 EA04 EA05 EB02 FA01 FA02 FB01 FB02 FB12 FF12 BB12 CC14 BB12 CC02 BB12 CC02 BB12 CC02 BB12 BB06 CC02 BB06 CC02 BB06 CC02 BB06 CC02 BB04 CC02 BB06 CC02 BB02 EE44 FF02 FF03 FF29 FF30 FF31 GG02 GG13 GG15 GG45 GG47 HJ01 HJ04 HJ12 HJ13 HJ23 HL03 HL04 HM15 NN03 NN23 NN24 NN35 NN73 PP03 PP35 QQ16 QQ16 QQ30 5G435 AA17 AA18 HO13H13H13H13H13

Claims (12)

[Claims] 1. A step of forming a semiconductor element on an element forming substrate, a step of adhering a surface of the element forming substrate on which the semiconductor element is formed, and an intermediate supporting substrate having an opening, A thinning step of thinning the element forming substrate from a surface on which the semiconductor element is not formed, an adhering step of adhering the element forming substrate to a first substrate after the thinning step, and a step of adhering after the adhering step. A step of introducing a stripping solution from the opening to strip the intermediate support substrate from the element forming substrate. 2. A step of providing a groove having a predetermined depth on one surface of an element forming substrate on which a semiconductor element is formed, a step of adhering an intermediate support substrate to the surface of the element forming substrate, A separation step of thinning the element formation substrate from the surface opposite to the surface and separating the element formation substrate into a plurality of partial substrates by the groove; and a bonding step of bonding one of the separated partial substrates to a first substrate, A step of peeling the intermediate support substrate from the partial substrate after the adhering step, the method of manufacturing a semiconductor device. 3. A step of forming a semiconductor element on an element forming substrate, a surface of the element forming substrate on which the semiconductor element is formed, and an outer side of a region corresponding to the region where the semiconductor element is formed. A step of adhering an intermediate support substrate having a groove, a thinning step of thinning the element forming substrate from a surface on which the semiconductor element is not formed, and a step of forming the element forming substrate in a first step after the thinning step. A method of manufacturing a semiconductor device, comprising: an adhering step of adhering to a substrate; and a step of peeling the intermediate support substrate from the element forming substrate after the adhering step. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor element includes a thin film transistor using poly-Si or a-Si. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the first substrate is a resin substrate. 6. The method of manufacturing a semiconductor device according to claim 1, wherein, when thinning the element formation substrate, the element formation substrate is thinned by polishing. 7. A step of forming a semiconductor element on an element formation substrate, a step of adhering a surface of the element formation substrate on which the semiconductor element is formed, and an intermediate support substrate having an opening, A thinning step of thinning the element forming substrate from a surface on which the semiconductor element is not formed, an adhering step of adhering the element forming substrate to a first substrate after the thinning step, and a step of adhering after the adhering step. Introducing a stripping solution from the opening to strip the intermediate support substrate from the element forming substrate; and a step of forming a counter electrode on the second substrate,
The surface of the first substrate on which the element formation substrate is bonded and the surface of the second substrate on which the counter electrode is formed are opposed to each other, and liquid crystal is injected between them. And a step of encapsulating the liquid crystal display device. 8. A step of providing a groove having a predetermined depth on one surface of an element forming substrate on which a semiconductor element is formed, a step of adhering an intermediate support substrate to the surface of the element forming substrate, A separation step of thinning the element formation substrate from the surface opposite to the surface and separating the element formation substrate into a plurality of partial substrates by the groove; and a bonding step of bonding one of the separated partial substrates to a first substrate, A step of separating the intermediate support substrate from the partial substrate after the adhering step, a step of forming a counter electrode on a second substrate, and a surface of the first substrate on a side to which the partial substrate is adhered, A step of facing the surface of the second substrate on the side where the counter electrode is formed, and injecting liquid crystal between them to seal the liquid crystal display device. Method. 9. A step of forming a semiconductor element on an element formation substrate, a surface of the element formation substrate on which the semiconductor element is formed, and an outer side of a region corresponding to the region where the semiconductor element is formed. A step of adhering an intermediate support substrate having a groove, a thinning step of thinning the element forming substrate from a surface on which the semiconductor element is not formed, and a step of forming the element forming substrate in a first step after the thinning step. An adhering step of adhering to the substrate, a step of peeling the intermediate support substrate from the element forming substrate after the adhering step, a step of forming a counter electrode on the second substrate, and the element forming of the first substrate A step of causing a surface on the side where the substrate is adhered and a surface of the second substrate on the side on which the counter electrode is formed to face each other, and injecting a liquid crystal therebetween to seal the surface. Manufacture of liquid crystal display device characterized by Method. 10. A step of forming a semiconductor element on an element forming substrate, a step of adhering a surface of the element forming substrate on the side where the semiconductor element is formed, and an intermediate support substrate having an opening, A thinning step of thinning the element forming substrate from a surface on which the semiconductor element is not formed, an adhering step of adhering the element forming substrate to a first substrate after the thinning step, and a step of adhering after the adhering step. A step of introducing a stripping solution from the opening to strip the intermediate support substrate from the element forming substrate, a step of forming a transparent electrode layer on the second substrate, and a light emitting layer formed on the transparent electrode layer. A step of forming an electrode layer on the light emitting layer, a surface of the first substrate on which the element forming substrate is bonded, and a surface of the second substrate on which the electrode layer is formed. And a step of facing the surface to each other. And a method for manufacturing an EL display device. 11. A step of providing a groove having a predetermined depth on one surface of an element forming substrate on which a semiconductor element is formed, a step of adhering an intermediate support substrate to the surface of the element forming substrate, A separation step of thinning the element formation substrate from the surface opposite to the surface and separating the element formation substrate into a plurality of partial substrates by the groove; and a bonding step of bonding one of the separated partial substrates to a first substrate, A step of separating the intermediate support substrate from the partial substrate after the adhering step, a step of forming a transparent electrode layer on a second substrate, a step of forming a light emitting layer on the transparent electrode layer, and the light emitting layer. A step of forming an electrode layer thereon, and a step of making a surface of the first substrate on which the partial substrate is adhered and a surface of the second substrate on a side on which the electrode layer is formed face each other. Manufacture of an EL display device characterized by comprising: Method. 12. A step of forming a semiconductor element on an element forming substrate, a surface of the element forming substrate on which the semiconductor element is formed, and an outer side of a region corresponding to a region where the semiconductor element is formed. A step of adhering an intermediate support substrate having a groove, a thinning step of thinning the element forming substrate from a surface on which the semiconductor element is not formed, and a step of forming the element forming substrate in a first step after the thinning step. An adhering step of adhering to the substrate, a step of separating the intermediate support substrate from the element forming substrate after the adhering step, a step of forming a transparent electrode layer on the second substrate, and a light emitting layer on the transparent electrode layer. And a step of forming an electrode layer on the light emitting layer,
And a step of causing a surface of the first substrate on which the element forming substrate is bonded and a surface of the second substrate on a side on which the electrode layer is formed to face each other. EL
Manufacturing method of display device.