JP2003017069A - Electrode for lithium secondary battery and lithium secondary battery - Google Patents
Electrode for lithium secondary battery and lithium secondary batteryInfo
- Publication number
- JP2003017069A JP2003017069A JP2001196639A JP2001196639A JP2003017069A JP 2003017069 A JP2003017069 A JP 2003017069A JP 2001196639 A JP2001196639 A JP 2001196639A JP 2001196639 A JP2001196639 A JP 2001196639A JP 2003017069 A JP2003017069 A JP 2003017069A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- current collector
- secondary battery
- lithium secondary
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052744 lithium Inorganic materials 0.000 title claims abstract description 61
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000010409 thin film Substances 0.000 claims abstract description 68
- 239000011149 active material Substances 0.000 claims abstract description 31
- 238000005275 alloying Methods 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 13
- 230000003746 surface roughness Effects 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000007373 indentation Methods 0.000 claims description 6
- 239000011255 nonaqueous electrolyte Substances 0.000 claims description 2
- 230000037303 wrinkles Effects 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000010949 copper Substances 0.000 description 16
- 239000011889 copper foil Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 238000007599 discharging Methods 0.000 description 10
- 239000003792 electrolyte Substances 0.000 description 6
- 229910000765 intermetallic Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910016855 F9SO2 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910010903 Li2B12Cl12 Inorganic materials 0.000 description 1
- 229910000552 LiCF3SO3 Inorganic materials 0.000 description 1
- 229910013595 LiCo0.5Ni0.5O2 Inorganic materials 0.000 description 1
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 1
- 229910013716 LiNi Inorganic materials 0.000 description 1
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- NQPBSFCQFMKDNU-UHFFFAOYSA-N carbonic acid;1,3-dioxol-2-one Chemical compound OC(O)=O.O=C1OC=CO1 NQPBSFCQFMKDNU-UHFFFAOYSA-N 0.000 description 1
- LTMDBXHVSXIXQG-UHFFFAOYSA-N carbonic acid;ethyl methyl carbonate Chemical compound OC(O)=O.CCOC(=O)OC LTMDBXHVSXIXQG-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001540 lithium hexafluoroarsenate(V) Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Battery Electrode And Active Subsutance (AREA)
- Cell Electrode Carriers And Collectors (AREA)
- Secondary Cells (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、リチウム二次電池
用電極及びこれを用いたリチウム二次電池に関するもの
である。TECHNICAL FIELD The present invention relates to an electrode for a lithium secondary battery and a lithium secondary battery using the same.
【0002】[0002]
【従来の技術】近年、研究開発が盛んに行われているリ
チウム二次電池は、用いられる電極により充放電電圧、
充放電サイクル寿命特性、保存特性などの電池特性が大
きく左右される。このことから、電極に用いる活物質を
改善することにより、電池特性の向上が図られている。2. Description of the Related Art In recent years, lithium secondary batteries, which have been actively researched and developed, have a charging / discharging voltage depending on an electrode used.
Battery characteristics such as charge / discharge cycle life characteristics and storage characteristics are greatly affected. Therefore, the battery characteristics are improved by improving the active material used for the electrode.
【0003】負極活物質としてリチウム金属を用いる
と、重量当たり及び体積当たりともに高いエネルギー密
度の電池を構成することができるが、充電時にリチウム
がデンドライト状に析出し、内部短絡を引き起こすとい
う問題があった。When lithium metal is used as the negative electrode active material, a battery having a high energy density per weight and volume can be constructed, but there is a problem that lithium is deposited in dendrite form during charging and causes an internal short circuit. It was
【0004】これに対し、充電の際に電気化学的にリチ
ウムと合金化するアルミニウム、シリコン、錫などを電
極として用いるリチウム二次電池が報告されている(So
lidState Ionics,113-115,p57(1998)) 。これらのう
ち、特にシリコンは理論容量が大きく、高い容量を示す
電池用負極として有望であり、これを負極とする種々の
二次電池が提案されている(特開平10−255768
号公報)。しかしながら、この種の合金負極は、電極活
物質である合金自体が充放電により微粉化し集電特性が
悪化することから、十分なサイクル特性は得られていな
い。On the other hand, a lithium secondary battery using aluminum, silicon, tin, or the like, which is electrochemically alloyed with lithium during charging, as an electrode has been reported (So.
lidState Ionics, 113-115, p57 (1998)). Of these, silicon is particularly promising as a negative electrode for a battery having a large theoretical capacity and a high capacity, and various secondary batteries using this as a negative electrode have been proposed (JP-A-10-255768).
Issue). However, in this type of alloy negative electrode, sufficient cycle characteristics have not been obtained because the alloy itself, which is an electrode active material, becomes fine powder due to charge and discharge and deteriorates current collecting characteristics.
【0005】[0005]
【発明が解決しようとする課題】本出願人は、シリコン
等を電極活物質とし、良好な充放電サイクル特性を示す
リチウム二次電池用電極として、CVD法またはスパッ
タリング法などの薄膜形成方法により、集電体上に微結
晶薄膜または非晶質薄膜を形成したリチウム二次電池用
電極を提案している(特願平11−301646号な
ど)。The applicant of the present invention uses a thin film forming method such as a CVD method or a sputtering method as an electrode for a lithium secondary battery which uses silicon or the like as an electrode active material and exhibits good charge / discharge cycle characteristics. An electrode for a lithium secondary battery in which a microcrystalline thin film or an amorphous thin film is formed on a current collector has been proposed (Japanese Patent Application No. 11-301646, etc.).
【0006】このようなリチウム二次電池用電極におい
ては、集電体の成分が活物質薄膜に拡散することによ
り、集電体と活物質薄膜との密着性が保たれ、充放電サ
イクル特性が向上することがわかっている。In such an electrode for a lithium secondary battery, the components of the current collector are diffused into the active material thin film, so that the adhesion between the current collector and the active material thin film is maintained and the charge / discharge cycle characteristics are improved. I know it will improve.
【0007】しかしながら、このようなリチウム二次電
池用電極においては、活物質薄膜と集電体との密着性が
良好であるため、充放電によって活物質が膨張・収縮
し、これに伴い集電体が延びることによってしわなどの
変形が電極に発生する場合があった。特に銅箔などの延
性に富んだ金属箔を集電体として用いた場合、電極の変
形の度合いが大きくなる。電極が変形すると、これを収
納する電池内において体積が増加するため、電池の体積
当りのエネルギー密度が低下し、問題となる。However, in such an electrode for a lithium secondary battery, since the adhesion between the active material thin film and the current collector is good, the active material expands and contracts due to charge and discharge, and accordingly the current collection occurs. When the body extends, deformation such as wrinkles may occur in the electrodes. In particular, when a metal foil having a high ductility such as a copper foil is used as the current collector, the degree of deformation of the electrode increases. When the electrode is deformed, the volume in the battery accommodating the electrode is increased, and the energy density per volume of the battery is reduced, which is a problem.
【0008】本発明の目的は、充放電によるしわや変形
などが生じにくいリチウム二次電池用電極及びこれを用
いたリチウム二次電池を提供することにある。An object of the present invention is to provide an electrode for a lithium secondary battery which is less likely to be wrinkled or deformed due to charging and discharging, and a lithium secondary battery using the electrode.
【0009】[0009]
【課題を解決するための手段】本発明のリチウム二次電
池用電極は、リチウムと合金化することによりリチウム
を吸蔵する活物質薄膜が集電体上に堆積して形成された
リチウム二次電池用電極であり、厚み方向への変形量が
5〜20μmである変形部が1cm2あたり10個以上
形成されており、かつ変形部による開口率が4%以下で
ある集電体を上記集電体として用いたことを特徴として
いる。An electrode for a lithium secondary battery of the present invention is a lithium secondary battery formed by depositing an active material thin film that absorbs lithium by alloying with lithium on a current collector. The above-mentioned current collector is an electrode for use, which has 10 or more deformed portions per cm 2 having a deformation amount of 5 to 20 μm in the thickness direction, and has an aperture ratio of 4% or less due to the deformed portions. It is characterized by being used as a body.
【0010】本発明における集電体では、厚み方向への
変形量が5〜20μmである変形部が1cm2あたり1
0個以上形成されている。このような変形部が、上記の
分布となるように形成されているので、充放電反応の際
活物質薄膜の膨張・収縮により生じた応力が集電体に働
いたとき、各変形部において集電体が変形することによ
り、この応力を吸収することができる。従って、集電体
の変形が各変形部に分散され、大きな変形量で集電体が
変形するのを防止することができる。このため、充放電
反応により大きなしわや変形が集電体に発生するのを防
止することができる。In the current collector of the present invention, the deformed portion whose deformation amount in the thickness direction is 5 to 20 μm is 1 per 1 cm 2.
0 or more are formed. Since such deformed portions are formed so as to have the above distribution, when the stress generated by the expansion and contraction of the active material thin film during the charge / discharge reaction acts on the current collector, the deformed portions are collected in each deformed portion. This stress can be absorbed by the deformation of the electric body. Therefore, the deformation of the current collector is distributed to the respective deforming portions, and it is possible to prevent the current collector from being deformed by a large amount of deformation. Therefore, it is possible to prevent large wrinkles and deformation from occurring in the current collector due to the charge / discharge reaction.
【0011】上記のように、変形部における厚み方向の
変形量は5〜20μmである。厚み方向への変形量が5
μm未満であると、集電体に応力が働いた際、変形部の
変形によりこの応力を吸収できない場合がある。また、
厚み方向への変形量が20μmを超えると、変形部にお
ける変形が大きくなり過ぎ、電池内に収納したときの体
積あたりのエネルギー密度が低下する場合がある。As described above, the amount of deformation in the thickness direction of the deformed portion is 5 to 20 μm. The amount of deformation in the thickness direction is 5
When the thickness is less than μm, when stress acts on the current collector, the stress may not be absorbed due to the deformation of the deformed portion. Also,
When the amount of deformation in the thickness direction exceeds 20 μm, the deformation in the deformed portion becomes too large, and the energy density per volume when stored in the battery may decrease.
【0012】また、変形部は、上述のように1cm2あ
たり10個以上形成され、好ましくは10〜1000個
形成される。1cm2あたり10個未満であると、変形
部の数が少なくなり過ぎ、集電体に応力が働いたとき
に、変形部における小さな変形として応力を吸収するこ
とができず、変形部において大きな変形となる場合があ
る。また、変形部の数が1000個を超えると、変形部
の形成が困難になったり、変形部の数が大きくなり過
ぎ、集電体の強度が低下したりする場合がある。As described above, 10 or more, preferably 10 to 1000, deformed portions are formed per cm 2 . When it is less than 10 per 1 cm 2 , the number of deformed portions becomes too small, and when stress acts on the current collector, the stress cannot be absorbed as a small deformation in the deformed portion, resulting in large deformation in the deformed portion. May be If the number of deformed portions exceeds 1,000, it may be difficult to form the deformed portions, or the number of deformed portions may become too large, and the strength of the current collector may decrease.
【0013】本発明において、上記変形部には、切れ込
みや穴等が形成されていてもよい。このような場合、変
形部による開口率が4%以下となるように切れ込みや穴
等が形成される。すなわち、切れ込みや穴等の合計の面
積が、集電体の全面の面積の4%以下となるように切れ
込みや穴等が形成される。切れ込みや穴等の開口部分に
は、活物質薄膜が堆積されないので、開口率を4%以下
とすることより、集電体上に堆積される活物質薄膜の量
を確保することができ、充放電容量の低下を防止するこ
とができる。In the present invention, the deformed portion may be formed with a notch or a hole. In such a case, a notch, a hole, or the like is formed so that the opening ratio of the deformed portion is 4% or less. That is, the notches, holes, etc. are formed such that the total area of the notches, holes, etc. is 4% or less of the total area of the current collector. Since the active material thin film is not deposited on the openings such as cuts or holes, the amount of the active material thin film deposited on the current collector can be secured by setting the opening ratio to 4% or less. It is possible to prevent the discharge capacity from decreasing.
【0014】切れ込みを有する変形部は、例えば、ラス
加工により形成することができる。ラス加工により変形
部を形成する場合、上述のように、開口率が4%以下と
なるようにラス加工が施される。The deformed portion having a notch can be formed by lath processing, for example. When forming the deformed portion by lathing, lathing is performed so that the aperture ratio is 4% or less, as described above.
【0015】また、本発明における変形部は、切れ込み
等が形成されない、すなわち開口率が0%である変形部
であってもよい。このような変形部は、例えば、圧痕加
工により形成することができる。圧痕加工は、集電体の
所定の箇所を押圧して変形させることにより行う加工で
ある。Further, the deformed portion in the present invention may be a deformed portion in which a notch or the like is not formed, that is, the aperture ratio is 0%. Such a deformed portion can be formed by, for example, indentation processing. The indentation processing is processing performed by pressing a predetermined portion of the current collector to deform it.
【0016】本発明において、変形部における厚み方向
への変形量は、変形部において、最も大きく変形した箇
所の変形量であり、変形部以外の集電体の表面と変形部
における最も大きな変形箇所との間の厚み方向の距離で
ある。また、変形部は、集電体上において均等に分散し
て形成されていることが好ましく、一定の規則性を有す
るように分散して形成されていることが好ましい。In the present invention, the amount of deformation in the thickness direction at the deformed portion is the amount of deformation at the most deformed portion in the deformed portion, and the largest deformed portion at the surface of the current collector other than the deformed portion and the deformed portion. Is the distance in the thickness direction. In addition, the deformed portions are preferably formed so as to be uniformly dispersed on the current collector, and are preferably formed so as to have a certain regularity.
【0017】本発明において用いる集電体は、表面に凹
凸が形成された集電体に変形部を形成させたものである
ことが好ましい。変形部を形成する前の集電体の表面粗
さRaは、0.01μm以上であることが好ましく、さ
らに好ましくは0.05μm以上であり、さらに好まし
くは0.1μm以上である。集電体の表面粗さRaの上
限値は、特に限定されるものではないが、2μmを超え
るものは入手しにくいので、一般には2μm以下であ
る。従って、集電体の表面粗さRaは、0.01〜2μ
mであることが好ましく、さらに好ましくは0.05〜
2μmであり、さらに好ましくは0.1〜2μmであ
る。It is preferable that the current collector used in the present invention has a deformed portion formed on a current collector having irregularities formed on its surface. The surface roughness Ra of the current collector before forming the deformed portion is preferably 0.01 μm or more, more preferably 0.05 μm or more, and further preferably 0.1 μm or more. The upper limit of the surface roughness Ra of the current collector is not particularly limited, but it is generally 2 μm or less because those having a surface roughness Ra of more than 2 μm are difficult to obtain. Therefore, the surface roughness Ra of the current collector is 0.01 to 2 μm.
It is preferably m, and more preferably 0.05 to
It is 2 μm, and more preferably 0.1 to 2 μm.
【0018】また、変形部を形成する前の集電体の厚み
は、5〜40μmであることが好ましい。集電体の厚み
が5μm未満であると、集電体の強度が弱くなり、充放
電や電池への組み立ての際に集電体が破断する場合があ
る。また、集電体の厚みが40μmを超えると、後加工
での加工性が低下したり、充放電の際に生じる応力を有
効に分散させることができなくなる場合がある。The thickness of the current collector before forming the deformed portion is preferably 5 to 40 μm. If the thickness of the current collector is less than 5 μm, the strength of the current collector becomes weak, and the current collector may be broken during charge / discharge or assembly into a battery. Further, if the thickness of the current collector exceeds 40 μm, the workability in post-processing may be reduced, or the stress generated during charge / discharge may not be effectively dispersed.
【0019】本発明において集電体上に堆積して形成す
る活物質薄膜としては、リチウムと合金化することによ
りリチウムを吸蔵する活物質からなる薄膜であれば、特
に限定されるものではない。このような活物質として
は、シリコン、ゲルマニウム、錫、鉛、亜鉛、マグネシ
ウム、ナトリウム、アルミニウム、カリウム、インジウ
ム及びこれらの合金などが挙げられる。これらの中でも
シリコンを主成分とする非晶質または微結晶薄膜が好ま
しく用いられる。In the present invention, the active material thin film deposited and formed on the current collector is not particularly limited as long as it is a thin film made of an active material that absorbs lithium by alloying with lithium. Examples of such an active material include silicon, germanium, tin, lead, zinc, magnesium, sodium, aluminum, potassium, indium and alloys thereof. Among these, an amorphous or microcrystalline thin film containing silicon as a main component is preferably used.
【0020】本発明において、活物質薄膜を堆積させる
方法としては、気相または液相から、集電体の基板上
に、原子またはイオンを移動し堆積するような方法が好
ましく用いられ、具体的には、CVD法、スパッタリン
グ法、蒸着法、溶射法、またはめっき法などが挙げられ
る。In the present invention, as a method for depositing an active material thin film, a method of moving and depositing atoms or ions from a gas phase or a liquid phase onto a substrate of a current collector is preferably used. Examples thereof include a CVD method, a sputtering method, a vapor deposition method, a thermal spraying method, and a plating method.
【0021】本発明において用いられる集電体は、リチ
ウムと合金化しない金属から形成されていることが好ま
しく、このような材料としては、銅、銅を含む合金、ニ
ッケル、ステンレスなどが挙げられる。The current collector used in the present invention is preferably formed of a metal that does not alloy with lithium. Examples of such a material include copper, alloys containing copper, nickel, stainless steel and the like.
【0022】また、本発明においては、活物質薄膜中
に、集電体の成分が拡散していることが好ましい。例え
ば、活物質薄膜としてシリコン薄膜を用い、集電体とし
て銅を含む集電体を用いる場合、シリコン薄膜中に銅が
拡散していることが好ましい。このような集電体成分の
拡散は、加熱により促進することができる。従って、薄
膜形成の際の基板温度を高めたり、あるいは薄膜形成後
熱処理することにより、集電体成分の拡散を高めること
ができる。Further, in the present invention, it is preferable that the components of the current collector are diffused in the active material thin film. For example, when a silicon thin film is used as the active material thin film and a copper-containing current collector is used as the current collector, it is preferable that copper is diffused in the silicon thin film. Such diffusion of the current collector component can be promoted by heating. Therefore, the diffusion of the current collector component can be enhanced by raising the substrate temperature during thin film formation or by performing heat treatment after thin film formation.
【0023】活物質としてシリコンなどを用いる場合、
集電体の成分は、薄膜中において、薄膜成分と金属間化
合物を形成せずに固溶体を形成していることが好まし
い。薄膜成分がシリコンであり、集電体成分が銅である
場合、薄膜中においてはシリコンと銅の金属間化合物が
形成されずに、銅とシリコンの固溶体が形成されている
ことが好ましい。一般に、集電体成分が過剰に拡散する
と、金属間化合物が形成され易い。従って、例えば、薄
膜形成後高い温度で熱処理すると、金属間化合物が形成
される場合がある。ここで、金属間化合物とは、金属同
士が特定の比率で化合した特定の結晶構造を有する化合
物をいう。When silicon or the like is used as the active material,
The component of the current collector preferably forms a solid solution in the thin film without forming an intermetallic compound with the thin film component. When the thin film component is silicon and the current collector component is copper, it is preferable that a solid solution of copper and silicon is formed without forming an intermetallic compound of silicon and copper in the thin film. Generally, if the current collector component is excessively diffused, an intermetallic compound is likely to be formed. Therefore, for example, when heat treatment is performed at a high temperature after forming a thin film, an intermetallic compound may be formed. Here, the intermetallic compound means a compound having a specific crystal structure in which metals are combined in a specific ratio.
【0024】活物質薄膜に集電体成分が拡散することに
より、薄膜の集電体に対する密着性を高めることがで
き、充放電サイクル特性を向上させることができる。本
発明における活物質薄膜は、充放電反応により、薄膜の
厚み方向に切れ目が形成され、薄膜が柱状に分離されて
いることが好ましい。柱状に分離されることにより、柱
状部分の周囲には空隙が形成され、充放電反応による活
物質薄膜の体積の膨張・収縮をこの空隙の部分で吸収す
ることができ、活物質薄膜の体積の膨張・収縮による応
力を緩和することができる。従って、活物質薄膜の集電
体からの剥離を抑制し、集電体への密着性を保つことが
できる。By diffusing the current collector component in the active material thin film, the adhesion of the thin film to the current collector can be enhanced and the charge / discharge cycle characteristics can be improved. In the active material thin film of the present invention, it is preferable that a cut is formed in the thickness direction of the thin film by a charge / discharge reaction, and the thin film is separated into columnar shapes. By separating into a columnar shape, a void is formed around the columnar portion, and expansion / contraction of the volume of the active material thin film due to the charge / discharge reaction can be absorbed in this void portion, and the volume of the active material thin film can be absorbed. The stress due to expansion and contraction can be relieved. Therefore, peeling of the active material thin film from the current collector can be suppressed, and adhesion to the current collector can be maintained.
【0025】活物質薄膜が柱状に分離する際の充放電と
しては、活物質薄膜の薄膜構造の変化が急激にならない
ように、充放電をゆっくり行ったり、初回の充電率を下
げたり、充電率を徐々に段階的に上げて行く方法などを
採用してもよい。The charge / discharge when the active material thin film is separated into columns is performed slowly so that the thin film structure of the active material thin film does not change rapidly, the charge rate is lowered at the first time, or the charge rate is lowered. It is also possible to adopt a method of gradually increasing the value of.
【0026】また、本発明における薄膜には、予めリチ
ウムが吸蔵または添加されていてもよい。リチウムは、
薄膜を形成する際に添加してもよい。すなわち、リチウ
ムを含有する薄膜を形成することにより、薄膜にリチウ
ムを添加してもよい。また、薄膜を形成した後に、薄膜
にリチウムを吸蔵または添加させてもよい。薄膜にリチ
ウムを吸蔵または添加させる方法としては、電気化学的
にリチウムを吸蔵または添加させる方法が挙げられる。Further, lithium may be previously occluded or added to the thin film of the present invention. Lithium
You may add when forming a thin film. That is, lithium may be added to the thin film by forming a thin film containing lithium. Further, after forming the thin film, lithium may be occluded or added to the thin film. Examples of a method of occluding or adding lithium to the thin film include a method of electrochemically occluding or adding lithium.
【0027】また、本発明の活物質薄膜の厚みは特に限
定されるものではないが、例えば10μm以下の厚みと
することができる。また、高い充放電容量を得るために
は、厚みは1μm以上であることが好ましい。The thickness of the active material thin film of the present invention is not particularly limited, but may be, for example, 10 μm or less. Further, in order to obtain a high charge / discharge capacity, the thickness is preferably 1 μm or more.
【0028】本発明のリチウム二次電池は、上記本発明
の電極からなる負極と、正極と、非水電解質とを備える
ことを特徴としている。本発明のリチウム二次電池に用
いる電解質の溶媒は、特に限定されるものではないが、
エチレンカーボネート、プロピレンカーボネート、ブチ
レンカーボネート、ビニレンカーボネートなどの環状カ
ーボネートと、ジメチルカーボネート、メチルエチルカ
ーボネート、ジエチルカーボネートなどの鎖状カーボネ
ートとの混合溶媒が例示される。また、前記環状カーボ
ネートと1,2−ジメトキシエタン、1,2−ジエトキ
シエタンなどのエーテル系溶媒や、γ−ブチロラクト
ン、スルホラン、酢酸メチル等の鎖状エステル等との混
合溶媒も例示される。また、電解質の溶質としては、L
iPF6、LiBF4、LiCF3SO3、LiN(CF 3
SO2)2、LiN(C2F5SO2)2、LiN(CF3S
O2)(C4F9SO2)、LiC(CF3SO2)3、Li
C(C2F5SO2)3、LiAsF6、LiClO4、Li
2B10Cl10、Li2B12Cl12など及びそれらの混合物
が例示される。さらに電解質として、ポリエチレンオキ
シド、ポリアクリロニトリル、ポリフッ化ビニリデンな
どのポリマー電解質に電解液を含浸したゲル状ポリマー
電解質や、LiI、Li3Nなどの無機固体電解質が例
示される。本発明のリチウム二次電池の電解質は、イオ
ン導電性を発現させる溶質としてのLi化合物とこれを
溶解・保持する溶媒が電池の充電時や放電時あるいは保
存時の電圧で分解しない限り、制約なく用いることがで
きる。The lithium secondary battery of the present invention is the above-mentioned present invention.
A negative electrode composed of the above electrodes, a positive electrode, and a non-aqueous electrolyte
It is characterized by that. For the lithium secondary battery of the present invention
The electrolyte solvent used is not particularly limited,
Ethylene carbonate, propylene carbonate, buty
Cyclic catalysts such as ren carbonate and vinylene carbonate
Carbonate, dimethyl carbonate, methyl ethyl carbonate
Carbonate such as carbonate and diethyl carbonate
A mixed solvent with a salt is exemplified. Also, the annular carbo
And 1,2-dimethoxyethane, 1,2-diethoxy
Ether solvents such as sietane and γ-butyrolacto
Mixed with chain esters such as amine, sulfolane, methyl acetate, etc.
A mixed solvent is also exemplified. The solute of the electrolyte is L
iPF6, LiBFFour, LiCF3SO3, LiN (CF 3
SO2)2, LiN (C2FFiveSO2)2, LiN (CF3S
O2) (CFourF9SO2), LiC (CF3SO2)3, Li
C (C2FFiveSO2)3, LiAsF6, LiClOFour, Li
2BTenClTen, Li2B12Cl12Etc. and their mixtures
Is exemplified. As an electrolyte, polyethylene oxide
Sid, polyacrylonitrile, polyvinylidene fluoride
Gel polymer in which polymer electrolyte is impregnated with electrolyte
Electrolyte, LiI, Li3An example is an inorganic solid electrolyte such as N
Shown. The electrolyte of the lithium secondary battery of the present invention is
And a Li compound as a solute that develops conductivity
The solvent to be dissolved / retained should be used when the battery is charged, discharged, or stored.
It can be used without restrictions unless it is disassembled with the voltage at hand.
Wear.
【0029】本発明のリチウム二次電池の正極活物質と
しては、LiCoO2、LiNiO2、LiMn2O4、L
iMnO2、LiCo0.5Ni0.5O2、LiNi0.7Co
0.2Mn0.1O2などのリチウム含有遷移金属酸化物や、
MnO2などのリチウムを含有していない金属酸化物が
例示される。また、この他にも、リチウムを電気化学的
に挿入・脱離する物質であれば、制限なく用いることが
できる。Examples of the positive electrode active material of the lithium secondary battery of the present invention include LiCoO 2 , LiNiO 2 , LiMn 2 O 4 and L.
iMnO 2 , LiCo 0.5 Ni 0.5 O 2 , LiNi 0.7 Co
Lithium-containing transition metal oxides such as 0.2 Mn 0.1 O 2 ,
Examples include metal oxides that do not contain lithium, such as MnO 2 . In addition to this, any substance that electrochemically inserts / desorbs lithium can be used without limitation.
【0030】[0030]
【発明の実施の形態】以下、本発明を実施例に基づいて
さらに詳細に説明するが本発明は以下の実施例に何ら限
定されるものではなく、その要旨を変更しない範囲にお
いて適宜変更して実施することが可能なものである。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail based on the following examples, but the invention is not intended to be limited to the following examples, but may be modified without departing from the scope of the invention. It can be implemented.
【0031】(実施例1)
〔負極の作製〕集電体として、電解銅箔(厚み25μ
m)にラス加工を施し、切れ込みを形成するとともに、
変形部を形成したものを用いた。図3は、このラス加工
を施した電解銅箔の光学顕微鏡写真である。図3に示す
ように、切れ込みの長さは約500μmであり、切れ込
みの長さ方向と垂直な方向(図3における上下方向)に
は、約1000μmの繰り返し周期で切れ込みが形成さ
れている。1cm2あたり100個の切れ込み(変形
部)が形成されている。Example 1 [Production of Negative Electrode] As a current collector, electrolytic copper foil (thickness: 25 μm)
m) is subjected to lath processing to form notches and
The thing which formed the deformation part was used. FIG. 3 is an optical micrograph of the electrolytic copper foil subjected to this lath processing. As shown in FIG. 3, the length of the notch is about 500 μm, and the notch is formed at a repeating cycle of about 1000 μm in the direction perpendicular to the length direction of the notch (vertical direction in FIG. 3). 100 cuts (deformed portions) are formed per cm 2 .
【0032】図1は、ラス加工を施した電解銅箔を拡大
して示す断面図である。図1に示すように、集電体10
には、切れ込み12が形成され、切れ込み12を挟む片
側部分を厚み方向に曲げて変形させることにより変形部
11が形成されている。変形部11の厚み方向への変形
量hは、変形部以外の集電体10の領域の表面10a
と、変形部11における最大変形部11aとの間の厚み
方向の距離である。ここで用いた集電体の厚み方向の変
形量hは14μmである。なお、変形量hは集電体全体
における平均値である。FIG. 1 is an enlarged sectional view showing an electrolytic copper foil subjected to lath processing. As shown in FIG. 1, a current collector 10
The notch 12 is formed in the groove, and the deformed portion 11 is formed by bending and deforming one side portion sandwiching the notch 12 in the thickness direction. The deformation amount h in the thickness direction of the deformed portion 11 is determined by the surface 10a of the region of the current collector 10 other than the deformed portion.
And the maximum deformation portion 11a of the deformation portion 11 in the thickness direction. The amount of deformation h of the current collector used here in the thickness direction is 14 μm. The deformation amount h is an average value of the entire current collector.
【0033】ラス加工を施す前の電解銅箔の表面粗さR
aを測定したところ、表面粗さRaは0.18μmであ
った。表面粗さRaは、触針式表面形状測定器Dekt
akST(日本真空技術社製)を用い、測定距離を2.
0mmに設定して測定した。表面粗さRaの計算は、た
わみ分の補正後に行った。たわみの補正に用いた補正値
は、ローパス=200μm、ハイパス=20μmであ
る。表面粗さRaは自動計算された値である。Surface roughness R of electrolytic copper foil before lath processing
When a was measured, the surface roughness Ra was 0.18 μm. Surface roughness Ra is a stylus type surface shape measuring instrument Dekt
Using akST (manufactured by Nippon Vacuum Technology Co., Ltd.), the measurement distance is 2.
The measurement was performed by setting it to 0 mm. The surface roughness Ra was calculated after the correction of the deflection. The correction values used for the deflection correction are low pass = 200 μm and high pass = 20 μm. The surface roughness Ra is a value calculated automatically.
【0034】また、ラス加工を施した電解銅箔につい
て、開口率を求めたところ約3%であった。開口率は、
集電体平面に対して垂直方向から投影した面積で換算し
た値である。The aperture ratio of the lathed electrolytic copper foil was about 3%. The aperture ratio is
It is a value converted by the area projected from the direction perpendicular to the current collector plane.
【0035】上記ラス加工を施した電解銅箔からなる集
電体の上に、RFスパッタリング法によりシリコン薄膜
を堆積して形成した。スパッタリングの条件は、スパッ
タガス(Arガス)流量:40sccm、基板温度:室
温(加熱なし)、反応圧力:0.2Pa(1.5×10
-3Torr)、高周波電力:2000Wの条件とした。
シリコン薄膜は、その厚みが6μmとなるまで堆積させ
た。A silicon thin film was deposited by the RF sputtering method on the current collector made of the above-mentioned lathed electrolytic copper foil. Sputtering conditions are as follows: Sputtering gas (Ar gas) flow rate: 40 sccm, substrate temperature: room temperature (no heating), reaction pressure: 0.2 Pa (1.5 × 10 5)
-3 Torr) and high frequency power: 2000 W.
The silicon thin film was deposited until its thickness was 6 μm.
【0036】得られたシリコン薄膜について、ラマン分
光分析を行ったところ、480cm -1近傍のピークは検
出されたが、520cm-1近傍のピークは検出されなか
った。このことから、得られたシリコン薄膜は非晶質シ
リコン薄膜であることが確認された。Raman content of the obtained silicon thin film
When optical analysis was performed, it was 480 cm. -1Peaks in the vicinity are not detected
It was put out, but 520 cm-1Is a nearby peak not detected?
It was. From this, the obtained silicon thin film is amorphous
It was confirmed that it was a recon thin film.
【0037】非晶質シリコン薄膜を形成した電解銅箔を
2cm×2cmの大きさに切り出し、電極a1とした。
図2は、電極a1を示す光学顕微鏡写真である。図2か
ら明らかなように、非晶質シリコン薄膜を形成した後
も、電解銅箔における切れ込みの状態や開口率につい
て、外観上の変化はほとんど見られなかった。なお、図
2に示すA−A′線は図1の断面図における断面方向を
示している。The electrolytic copper foil on which the amorphous silicon thin film was formed was cut out into a size of 2 cm × 2 cm to obtain an electrode a1.
FIG. 2 is an optical micrograph showing the electrode a1. As is clear from FIG. 2, even after the amorphous silicon thin film was formed, the appearance of the cut state and the aperture ratio in the electrolytic copper foil was hardly changed. The line AA 'shown in FIG. 2 indicates the sectional direction in the sectional view of FIG.
【0038】比較として、ラス加工を施していない電解
銅箔を集電体として用いる以外は、上記電極a1と同様
にして非晶質シリコン薄膜を形成し、これを2cm×2
cmの大きさに切り出して電極b1とした。For comparison, an amorphous silicon thin film was formed in the same manner as the electrode a1 except that an electrolytic copper foil that had not been lathed was used as a current collector.
It was cut out to a size of cm to obtain an electrode b1.
【0039】電極a1及び電極b1ともに、シリコンの
重量密度と膜厚から換算した原子密度は4.0×1022
cm-3であり、通常の結晶シリコンの値5.0×1022
cm -3の約80%程度であった。Both the electrodes a1 and b1 are made of silicon.
The atomic density converted from the weight density and the film thickness is 4.0 × 10.twenty two
cm-3And the value of ordinary crystalline silicon is 5.0 × 10twenty two
cm -3Was about 80%.
【0040】さらに、比較として、市販の単結晶シリコ
ン粉末(粒子径10μm)90重量部、及び結着剤とし
てのポリテトラフルオロエチレン10重量部を混合し、
これを直径17mmの金型でプレスし加圧成形して、ペ
レット状の電極c1を作製した。Further, as a comparison, 90 parts by weight of a commercially available single crystal silicon powder (particle diameter 10 μm) and 10 parts by weight of polytetrafluoroethylene as a binder were mixed,
This was pressed by a die having a diameter of 17 mm and pressure-molded to produce a pellet-shaped electrode c1.
【0041】〔正極の作製〕出発原料としてLi2CO3
及びCoCO3を用いて、Li:Coの原子比が1:1
となるように秤量して乳鉢で混合し、これを直径17m
mの金型でプレスし加圧成形した後、空気中において8
00℃で24時間焼成し、LiCoO2の焼成体を得
た。これを乳鉢で平均粒子径20μmとなるまで粉砕し
た。[Preparation of Positive Electrode] Li 2 CO 3 as a starting material
And CoCO 3 , the atomic ratio of Li: Co is 1: 1.
And weigh it so that
After press-molding with a m die, press in air 8
It was fired at 00 ° C. for 24 hours to obtain a fired body of LiCoO 2 . This was ground in a mortar until the average particle size became 20 μm.
【0042】得られたLiCoO2粉末が80重量部、
導電剤としてのアセチレンブラックが10重量部、結着
剤としてのポリテトラフルオロエチレンが10重量部と
なるように混合し、直径17mmの金型でプレスし加圧
成形して、ペレット状の正極を作製した。80 parts by weight of the obtained LiCoO 2 powder,
10 parts by weight of acetylene black as a conductive agent and 10 parts by weight of polytetrafluoroethylene as a binder were mixed and pressed with a die having a diameter of 17 mm and pressure-molded to obtain a pellet-shaped positive electrode. It was made.
【0043】〔電解液の作製〕エチレンカーボネートと
ジエチルカーボネートとの等体積混合溶媒に、LiPF
6を1モル/リットル溶解して電解液を作製し、これを
以下の電池の作製において用いた。[Preparation of Electrolyte Solution] LiPF 6 was added to an equal volume mixed solvent of ethylene carbonate and diethyl carbonate.
6 mol was dissolved in 1 mol / liter to prepare an electrolytic solution, which was used in the following battery preparation.
【0044】〔電池の作製〕上記の電極a1、b1及び
c1を負極として用い、上記正極及び電解液を用いて、
扁平型リチウム二次電池を作製した。[Production of Battery] Using the above electrodes a1, b1 and c1 as a negative electrode and using the above positive electrode and an electrolytic solution,
A flat type lithium secondary battery was produced.
【0045】図5は、作製したリチウム二次電池を示す
断面図である。図5に示すように、リチウム二次電池
は、正極1、負極2、セパレータ3、正極缶4、負極缶
5、正極集電体6、負極集電体7及びポリプロピレン製
の絶縁パッキング8などからなる。FIG. 5 is a sectional view showing the manufactured lithium secondary battery. As shown in FIG. 5, the lithium secondary battery includes a positive electrode 1, a negative electrode 2, a separator 3, a positive electrode can 4, a negative electrode can 5, a positive electrode current collector 6, a negative electrode current collector 7 and a polypropylene insulating packing 8. Become.
【0046】正極1及び負極2は、セパレータ3を介し
て対向している。これらは正極缶4及び負極缶5が形成
する電池ケース内に収納されている。正極1は、正極集
電体6を介して正極缶4に接続され、負極2は負極集電
体7を介して負極缶5に接続され、二次電池としての充
電及び放電が可能な構造となっている。電極a1を負極
として用いたものを電池A1とし、電極b1を負極とし
て用いたものを電池B1とし、電極c1を負極として用
いたものを電池C1とした。The positive electrode 1 and the negative electrode 2 face each other with the separator 3 in between. These are housed in a battery case formed by the positive electrode can 4 and the negative electrode can 5. The positive electrode 1 is connected to the positive electrode can 4 via the positive electrode current collector 6, and the negative electrode 2 is connected to the negative electrode can 5 via the negative electrode current collector 7 to provide a structure capable of charging and discharging as a secondary battery. Has become. A battery using the electrode a1 as a negative electrode was designated as a battery A1, a battery using the electrode b1 as a negative electrode was designated as a battery B1, and a battery using the electrode c1 as a negative electrode was designated as a battery C1.
【0047】〔充放電サイクル寿命特性の測定〕上記電
池A1、B1、及びC1について、充放電サイクル寿命
特性を評価した。25℃において電流値100μAで負
極容量が2000mAh/gとなるまで充電した後放電
し、これを1サイクルの充放電とし、各電池について5
0サイクル目の容量維持率を測定した。なお、2000
mAh/gまで充電されなかった電池C1については、
4.2Vまで充電した後、放電することによりサイクル
試験を行った。[Measurement of Charge / Discharge Cycle Life Characteristics] The charge / discharge cycle life characteristics of the above batteries A1, B1 and C1 were evaluated. The battery was charged at 25 ° C. with a current value of 100 μA until the negative electrode capacity reached 2000 mAh / g and then discharged, and this was regarded as one cycle of charging / discharging.
The capacity retention rate at the 0th cycle was measured. In addition, 2000
For battery C1 that was not charged to mAh / g,
A cycle test was performed by discharging the battery after charging it to 4.2V.
【0048】また、充放電前と充放電後の負極の厚みを
マイクロメーターで測定し、充放電前及び充放電後の負
極の見かけ上の厚みとした。充放電前及び充放電後の負
極の見かけ上の厚み及び50サイクル目の容量維持率を
表1に示す。Further, the thickness of the negative electrode before and after charge and discharge was measured with a micrometer to obtain the apparent thickness of the negative electrode before and after charge and discharge. Table 1 shows the apparent thickness of the negative electrode before and after charge and discharge and the capacity retention rate at the 50th cycle.
【0049】[0049]
【表1】 [Table 1]
【0050】表1に示す結果から明らかなように、シリ
コン薄膜を集電体上に堆積して形成した電極を負極とし
て用いた電池A1及びB1は、シリコン粉末を負極活物
質として用いた電池C1に比べ、良好な充放電サイクル
寿命特性を示している。また、本発明に従う電池A1
は、充放電後の負極の厚みの増加が、電池B1に比べ小
さくなっている。これは、予め変形部が所定の分布で形
成された集電体を用いることにより、充放電による集電
体の厚み方向の変形が分散され、厚み方向の変形量が抑
制されたことによるものと思われる。従って、電極a1
を用いることにより、電池のエネルギー密度を高めるこ
とができる。As is clear from the results shown in Table 1, the batteries A1 and B1 using the electrode formed by depositing the silicon thin film on the current collector as the negative electrode were the batteries C1 using the silicon powder as the negative electrode active material. Shows better charge / discharge cycle life characteristics. In addition, the battery A1 according to the present invention
Indicates that the increase in the thickness of the negative electrode after charging / discharging is smaller than that of the battery B1. This is because the deformation in the thickness direction of the current collector due to charging and discharging was dispersed by using the current collector in which the deformed portion was formed in a predetermined distribution, and the amount of deformation in the thickness direction was suppressed. Seem. Therefore, the electrode a1
By using, the energy density of the battery can be increased.
【0051】充放電後の電池A1中の電極a1について
走査型電子顕微鏡で観察したところ、シリコン薄膜の厚
み方向に切れ目が形成され、この切れ目によってシリコ
ン薄膜が柱状に分離されていることが確認された。ま
た、切れ目は厚み方向に形成されているが、面方向には
ほとんど形成されておらず、柱状部分の底部は集電体で
ある銅箔と密着していた。When the electrode a1 in the battery A1 after charging / discharging was observed with a scanning electron microscope, it was confirmed that a cut was formed in the thickness direction of the silicon thin film, and the silicon thin film was separated into columns by the cut. It was In addition, although the cut was formed in the thickness direction, it was hardly formed in the surface direction, and the bottom of the columnar portion was in close contact with the copper foil serving as the current collector.
【0052】また、シリコン薄膜の深さ方向にSIMS
分析を行ったところ、集電体近傍ではシリコン薄膜に集
電体の成分である銅(Cu)が拡散しており、シリコン
薄膜の表面に近づくにつれて集電体の成分である銅(C
u)の濃度が減少していることが確認された。また、銅
(Cu)の濃度が連続的に変化していることから、銅
(Cu)が拡散している領域においては、シリコンと銅
の金属間化合物ではなく、シリコンと銅の固溶体が形成
されていると考えられる。SIMS is applied in the depth direction of the silicon thin film.
As a result of the analysis, copper (Cu) which is a component of the current collector is diffused in the silicon thin film in the vicinity of the current collector, and copper (C) which is a component of the current collector becomes closer to the surface of the silicon thin film.
It was confirmed that the concentration of u) had decreased. Further, since the concentration of copper (Cu) is continuously changing, a solid solution of silicon and copper is formed in the region where copper (Cu) is diffused, not an intermetallic compound of silicon and copper. It is thought that
【0053】(実施例2)
〔負極の作製〕集電体として、実施例1において用いた
(ラス加工を施す前の)電解銅箔に、圧痕加工を施した
ものを用いた。圧痕加工は、プレス加工により行った。
図4は、圧痕加工を施した電解銅箔を示す断面図であ
る。図4に示すように、集電体22は、圧痕加工により
変形部21及び22が形成されている。この変形部21
及び22には、切れ込み等は形成されていない。図4に
示すように、変形部21と22は、交互に逆方向に突出
するように形成されている。変形部21の厚み方向への
変形量h1は7μmであり、変形部22の厚み方向への
変形量h2は7μmである。Example 2 [Fabrication of Negative Electrode] As the current collector, the electrolytic copper foil used in Example 1 (before lath processing) was subjected to indentation processing. The indentation process was performed by pressing.
FIG. 4 is a cross-sectional view showing an electrolytic copper foil that has been indented. As shown in FIG. 4, the current collector 22 has deformed portions 21 and 22 formed by indentation processing. This deforming portion 21
No cuts or the like are formed in the lines 22 and 22. As shown in FIG. 4, the deformable portions 21 and 22 are formed so as to alternately project in opposite directions. The deformation amount h 1 of the deforming portion 21 in the thickness direction is 7 μm, and the deformation amount h 2 of the deforming portion 22 in the thickness direction is 7 μm.
【0054】圧痕加工された電解銅箔において、1cm
2あたり約100個となるように変形部が形成されてい
る。また、変形部には切れ込み等が形成されていないの
で、開口率は0%である。Indentation-processed electrolytic copper foil, 1 cm
The deformed portions are formed so that there are about 100 deformed portions per 2 . In addition, since the notch or the like is not formed in the deformed portion, the aperture ratio is 0%.
【0055】この圧痕加工を施した電解銅箔を集電体と
して用い、この集電体の上に実施例1の電極a1と同様
にしてRFスパッタリング法により、非晶質シリコン薄
膜を厚み約6μmとなるまで形成し、電極a2を得た。This indented electrolytic copper foil was used as a current collector, and an amorphous silicon thin film having a thickness of about 6 μm was formed on the current collector by RF sputtering in the same manner as the electrode a1 of Example 1. To form an electrode a2.
【0056】〔電池の作製〕負極として上記の電極a2
を用いる以外は、上記実施例1と同様にしてリチウム二
次電池を作製し、電池A2とした。[Production of Battery] The above-mentioned electrode a2 is used as a negative electrode.
A lithium secondary battery was produced in the same manner as in Example 1 except that the above was used to obtain a battery A2.
【0057】〔充放電サイクル寿命特性の測定〕実施例
1と同様にして、電池A2について50サイクル目の容
量維持率を求め、その結果を表2に示した。また、充放
電前及び充放電後の負極の見かけ上の厚みを測定し、表
2に示した。なお、表2には、電池B1の結果を併せて
示した。[Measurement of Charge / Discharge Cycle Life Characteristics] In the same manner as in Example 1, the capacity retention rate at the 50th cycle of the battery A2 was determined, and the results are shown in Table 2. Further, the apparent thickness of the negative electrode before and after charge / discharge was measured and is shown in Table 2. In addition, Table 2 also shows the result of the battery B1.
【0058】[0058]
【表2】 [Table 2]
【0059】表2に示す結果から明らかなように、電極
a2を用いた電池A2においても、良好な充放電サイク
ル寿命特性が得られており、また電池B1に比べ、充放
電前後における負極の厚みの増加が小さくなっている。
従って、電極a2を用いることにより、電池のエネルギ
ー密度を高めることができる。As is clear from the results shown in Table 2, the battery A2 using the electrode a2 also provided good charge / discharge cycle life characteristics, and compared with the battery B1, the thickness of the negative electrode before and after charging / discharging. The increase is getting smaller.
Therefore, the energy density of the battery can be increased by using the electrode a2.
【0060】上記各実施例においては、活物質薄膜を堆
積させる前に集電体に変形部を形成しているが、本発明
はこれに限定されるものではなく、集電体上に活物質薄
膜を堆積して形成した後に、集電体に加工を施し変形部
を形成してもよい。In each of the above embodiments, the deformed portion is formed on the current collector before depositing the active material thin film, but the present invention is not limited to this, and the active material is formed on the current collector. After the thin film is deposited and formed, the current collector may be processed to form the deformed portion.
【0061】[0061]
【発明の効果】本発明によれば、充放電による大きなし
わや変形などが生じにくいリチウム二次電池用電極とす
ることができ、このリチウム二次電池用電極を用いるこ
とにより、リチウム二次電池のエネルギー密度を高める
ことができる。According to the present invention, an electrode for a lithium secondary battery which is less likely to be wrinkled or deformed due to charging and discharging can be obtained. By using this electrode for a lithium secondary battery, a lithium secondary battery can be obtained. The energy density of can be increased.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明の実施例1において用いた集電体の変形
部の形状を示す断面図。FIG. 1 is a sectional view showing the shape of a deformed portion of a current collector used in Example 1 of the present invention.
【図2】変形部を形成した集電体の上にシリコン薄膜を
堆積した後の状態を示す光学顕微鏡写真。FIG. 2 is an optical micrograph showing a state after depositing a silicon thin film on a current collector having a deformed portion.
【図3】変形部を形成した集電体を示す光学顕微鏡写
真。FIG. 3 is an optical micrograph showing a current collector having a deformed portion.
【図4】本発明の実施例2において用いた集電体の変形
部を示す断面図。FIG. 4 is a cross-sectional view showing a deformed portion of a current collector used in Example 2 of the present invention.
【図5】本発明の実施例において作製したリチウム二次
電池を示す断面図。FIG. 5 is a cross-sectional view showing a lithium secondary battery manufactured in an example of the present invention.
10…集電体 11…変形部 12…切れ目 20…集電体 21,22…変形部 h,h1,h2…変形部の厚み方向への変形量10 ... deformation amount to the current collector 11 ... deformable portion 12 ... slit 20 ... collector 21 ... deformation part h, h 1, h 2 ... thickness direction of the deformation portion
───────────────────────────────────────────────────── フロントページの続き (72)発明者 樽井 久樹 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 Fターム(参考) 5H017 AA03 AS02 AS10 BB06 CC03 DD01 DD08 HH03 5H029 AJ03 AJ11 AK02 AK03 AL11 AL13 AM00 AM02 AM03 AM04 AM05 AM07 AM12 AM16 BJ03 CJ03 CJ25 DJ07 DJ14 EJ01 5H050 AA08 BA17 CA05 CA08 CA09 CB11 DA03 DA06 DA07 FA15 FA19 FA20 GA24 HA04 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hisaki Tarui 2-5-3 Keihan Hondori, Moriguchi City, Osaka Prefecture Within Yo Denki Co., Ltd. F-term (reference) 5H017 AA03 AS02 AS10 BB06 CC03 DD01 DD08 HH03 5H029 AJ03 AJ11 AK02 AK03 AL11 AL13 AM00 AM02 AM03 AM04 AM05 AM07 AM12 AM16 BJ03 CJ03 CJ25 DJ07 DJ14 EJ01 5H050 AA08 BA17 CA05 CA08 CA09 CB11 DA03 DA06 DA07 FA15 FA19 FA20 GA24 HA04
Claims (10)
ムを吸蔵する活物質薄膜が集電体上に堆積して形成され
たリチウム二次電池用電極であって、 厚み方向への変形量が5〜20μmである変形部が1c
m2あたり10個以上形成されており、かつ前記変形部
による開口率が4%以下である集電体を前記集電体とし
て用いたことを特徴とするリチウム二次電池用電極。1. An electrode for a lithium secondary battery, which is formed by depositing an active material thin film that absorbs lithium by alloying with lithium on a current collector, the deformation amount in the thickness direction being 5 to 5. Deformation part of 20 μm is 1c
An electrode for a lithium secondary battery, characterized in that 10 or more electrodes are formed per m 2 , and a current collector having an opening ratio of 4% or less by the deformed portion is used as the current collector.
ことを特徴とする請求項1に記載のリチウム二次電池用
電極。2. The electrode for a lithium secondary battery according to claim 1, wherein a notch is formed in the deformed portion.
いることを特徴とする請求項2に記載のリチウム二次電
池用電極。3. The electrode for a lithium secondary battery according to claim 2, wherein the deformed portion is formed by lath processing.
いることを特徴とする請求項1に記載のリチウム二次電
池用電極。4. The electrode for a lithium secondary battery according to claim 1, wherein the deformed portion is formed by indentation processing.
粗さRaが0.01μm以上であることを特徴とする請
求項1〜4のいずれか1項に記載のリチウム二次電池用
電極。5. The lithium secondary battery according to claim 1, wherein a surface roughness Ra of the current collector before forming the deformed portion is 0.01 μm or more. Electrodes.
が5〜40μmであることを特徴とする請求項1〜5の
いずれか1項に記載のリチウム二次電池用電極。6. The electrode for a lithium secondary battery according to claim 1, wherein the thickness of the current collector before forming the deformed portion is 5 to 40 μm.
る非晶質または微結晶薄膜であることを特徴とする請求
項1〜6のいずれか1項に記載のリチウム二次電池用電
極。7. The electrode for a lithium secondary battery according to claim 1, wherein the active material thin film is an amorphous or microcrystalline thin film containing silicon as a main component.
散していることを特徴とする請求項1〜7のいずれか1
項に記載のリチウム二次電池用電極。8. The component of the current collector is diffused in the active material thin film, according to any one of claims 1 to 7.
An electrode for a lithium secondary battery according to item.
切れ目によって、柱状に分離されていることを特徴とす
る請求項1〜8のいずれか1項に記載のリチウム二次電
池用電極。9. The electrode for a lithium secondary battery according to claim 1, wherein the active material thin film is separated into columns by a cut formed in the thickness direction.
電極からなる負極と、正極と、非水電解質とを備えるこ
とを特徴とするリチウム二次電池。10. A lithium secondary battery comprising a negative electrode comprising the electrode according to any one of claims 1 to 9, a positive electrode, and a non-aqueous electrolyte.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001196639A JP2003017069A (en) | 2001-06-28 | 2001-06-28 | Electrode for lithium secondary battery and lithium secondary battery |
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| JP2004296104A (en) * | 2003-03-25 | 2004-10-21 | Sanyo Electric Co Ltd | Non-aqueous electrolyte for secondary battery and non-aqueous electrolyte secondary battery |
| JP2004296105A (en) * | 2003-03-25 | 2004-10-21 | Sanyo Electric Co Ltd | Non-aqueous electrolyte for secondary battery and non-aqueous electrolyte secondary battery |
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| WO2008072638A1 (en) | 2006-12-15 | 2008-06-19 | Tokyo Ohka Kogyo Co., Ltd. | Negative electrode base member |
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| US8323839B2 (en) | 2003-03-25 | 2012-12-04 | Sanyo Electric Co., Ltd. | Nonaqueous electrolyte solution for secondary battery and nonaqueous electrolyte secondary battery |
| JP2004296105A (en) * | 2003-03-25 | 2004-10-21 | Sanyo Electric Co Ltd | Non-aqueous electrolyte for secondary battery and non-aqueous electrolyte secondary battery |
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