JP2003013239A - High frequency matching circuit mechanism of chemical vapor deposition equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve film adhesion and uniformity of film adhesion of a film to be continuously formed. In a configuration having a high-frequency plasma generation mechanism for continuously forming at least two or more different film qualities on a substrate by changing a gas type, a gas flow rate, a gas pressure, and a high-frequency discharge power, high-frequency matching is provided. Circuit 10
The controller 13 for sequence control, and the high-frequency matching circuit 10 used for each step of the recipe for sequence control for film formation by the controller 13 records the drive position of the parallel plates of the variable capacitors 11 and 12 at which the reflected wave is minimized. Means 16 for controlling the position of the parallel plates of the variable capacitors 11 and 12 of the high-frequency matching circuit 10 in which the reflected wave in each step of the recipe of the sequence control for film formation used in the past is minimized. The controller 1 starts the discharge at a position where the drive position of the parallel plates 11 and 12 is shifted to the opposite side to the direction in which the operation is performed simultaneously with the start of the discharge.
3 is controlled.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency matching circuit mechanism of a chemical vapor deposition apparatus used for manufacturing a liquid crystal display device or a semiconductor.

[0002]

2. Description of the Related Art In recent years, liquid crystal display devices and semiconductors have been widely used in various fields. The progress of such a film forming apparatus (hereinafter referred to as a P-CVD apparatus) using a chemical vapor deposition method used for manufacturing a semiconductor or a thin film transistor is remarkable. In particular, a P-CVD apparatus for manufacturing a thin film transistor for a liquid crystal display device has a uniform substrate adhesion force over the entire surface of the substrate when different films are continuously formed in the same reaction chamber as the substrate area increases. Various efforts to make membranes have been made.

The structure of this P-CVD apparatus will be described below with reference to FIG.

In FIG. 3, the reaction chamber 1 of the P-CVD apparatus is shown.
Then, the material gas supplied from the gas pipe 2 is introduced into the electrode 3 to flow from the electrode plate gas hole 4, and the high frequency power supplied from the power source 5 to the electrode 3 and the heat supplied to the heater 7 of the substrate holder 6 Plasma is generated between the electrode 4 and the substrate 8. The reflected wave due to the plasma impedance at this time is measured by the reflected wave detection circuit 9, and the high frequency matching circuit 10
By adjusting the capacitances of the variable capacitors 11 and 12 at the position of the driving ball screw, the film formation is performed by minimizing the reflected wave due to the plasma impedance. In addition, these are entirely controlled by the sequence controller 13.

When at least two or more different film qualities are continuously formed on the same substrate, the type of material gas supplied from the gas pipe 2 and the power supply 5 to the electrode 3 are supplied at each step of sequence control. By changing the generated high frequency power and the heat supplied to the heater 7 of the substrate holder 6, respectively, plasma is generated between the electrode 4 and the substrate 8. Further, the reflected wave due to the plasma impedance is measured at each step by the reflected wave detection circuit 9, and the high frequency matching circuit 10 measures the variable capacitor 11 and the variable capacitor 1.
By adjusting the position of the ball screw for driving the variable capacitor of No. 2, the capacitance is changed and the reflected wave due to the plasma impedance is minimized to form the film.

[0006]

By the way, when the surface area of the film forming surface of the electrode 4 is 300 mm × 300 mm or more, and at least two or more different film qualities are continuously formed on the same substrate. , The film adhesion is different between the central part of the substrate and the peripheral part of the substrate. FIG. 4 shows the substrate 7 of FIG.
SiNx and a when a continuous film is formed of amorphous silicon nitride (hereinafter SiNx) and amorphous silicon (hereinafter a-Si)
The scratch test result between Si is shown. Substrate central part 1
4 and the peripheral portion 15 of the substrate respectively have SiNx films and a-
When a tape peeling test was conducted by inserting 100 1-mm square scratches on the Si film, the SiNx film and a-Si
It can be seen that peeling between films is greater in the substrate peripheral portion 15 than in the substrate central portion 14, and the substrate peripheral portion 15 is inferior in adhesive strength to the substrate central portion 14. This is continuous film formation
Variable capacitor 11 and variable capacitor 12 during i film formation
The ball screw position for driving the variable capacitor of (1) starts discharging from the position designated by the program from the sequence control controller 13. However, the reflected wave is received by the reflected wave detection circuit 9, and the capacity is adjusted by driving the position of the ball screw for driving the variable capacitor according to the result of the measurement.
Move to the minimum capacity for Si film formation. Therefore, it takes about 0.5 to 5 seconds. At this time, the discharge becomes unstable, and the film quality of the a-Si film formed during the instability is different between the central portion 14 and the peripheral portion 15 of the substrate, and appears as a difference in adhesive force.
For example, in the case of a thin film transistor of a liquid crystal display device, this difference in film quality causes a difference in performance of the thin film transistor between the central portion of the substrate 8 and the peripheral portion of the substrate, resulting in variation in display quality.

Therefore, the object of the present invention is to continuously form at least two or more different film qualities on a substrate by changing the gas species, gas flow rate, gas pressure and high frequency discharge power. It is an object of the present invention to provide a high frequency matching circuit mechanism of a chemical vapor deposition apparatus capable of improving the film adhesion force and the film adhesion force uniformity of a film formed by the above method.

[0008]

In order to solve the above problems, the high frequency matching circuit mechanism of the chemical vapor deposition apparatus according to the first aspect of the present invention uses at least two or more different film qualities as gas species and gas. A high-frequency matching circuit mechanism of a chemical vapor deposition apparatus having a high-frequency plasma generation mechanism for continuously forming a film on a substrate by changing a flow rate, a gas pressure, and a high-frequency discharge power. A high-frequency matching circuit that is adjusted at the driving position of, and a sequence control controller that controls the parallel plate of the variable capacitor to start discharging from a specified position,
The controller is provided with means for recording the driving position of the parallel plate of the variable capacitor in which the reflected wave is minimized by the high frequency matching circuit used for each step of the recipe of the film formation sequence control by the controller, and the film used in the past The drive position of the parallel plate of the variable capacitor of the high frequency matching circuit is the opposite to the drive position of the parallel plate of the variable capacitor, which is the same as the drive position of the parallel plate of the variable capacitor of the high frequency matching circuit where the reflected wave at each step of the sequence control recipe The controller is controlled to start the discharge at the position displaced to the side.

As described above, the parallel plate of the variable capacitor is driven with respect to the driving position of the parallel plate of the variable capacitor of the high-frequency matching circuit in which the reflected wave at each step of the sequence control recipe for film formation used in the past is minimized. Since the controller controls the discharge to start at the position where the drive position is shifted to the side opposite to the direction of operation at the same time as the discharge starts, the parallel plate drive ball screw of the variable capacitor of the high frequency matching circuit minimizes the reflected wave. Therefore, the ball screw for driving the parallel plate of the variable capacitor reaches the position where the reflected wave is minimized without reciprocating.

In the high frequency matching circuit mechanism of the chemical vapor deposition apparatus according to the second aspect, at least two or more different film qualities are formed on the substrate by changing the gas species, gas flow rate, gas pressure, and high frequency discharge power. A high frequency matching circuit mechanism of a chemical vapor deposition apparatus having a high frequency plasma generating mechanism for continuously forming a film, comprising: a high frequency matching circuit for adjusting the capacitance of a variable capacitor at a driving position of a parallel plate; A sequence control controller that drives the flat plate and controls to start discharge from a specified position,
The controller is provided with means for recording the driving position of the parallel plate of the variable capacitor where the reflected wave is minimized by the high frequency matching circuit used for each step of the recipe of the film formation sequence control by the controller, and the film formation used in the past At a position deviated within a range of 10% to 100% with respect to the distance between the driving position of the parallel plate of the variable capacitor of the high frequency matching circuit and the reference point at which the reflected wave at each step of the recipe for sequence control is minimized. Controlled by the controller to initiate discharge.

As described above, with respect to the distance between the driving position and the reference point of the parallel plate of the variable capacitor of the high frequency matching circuit, the reflected wave at each step of the recipe of the sequence control for film formation used in the past is minimized. Since the controller is controlled to start the discharge at a position displaced from 10% to 100%, the parallel plate driving ball screw of the variable capacitor of the high frequency matching circuit is short to the position where the reflected wave is minimized. Reach at a distance.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic diagram of a high frequency matching mechanism of a P-CVD apparatus according to an embodiment of the present invention, and portions corresponding to those of the conventional portion shown in FIG. 3 are designated by the same reference numerals.

In FIG. 1, reference numeral 16 denotes a recipe for film formation sequence control and a circuit for recording the position of the parallel-plate driving ball screw of the variable capacitor for each step.

As shown in FIG. 1, the variable capacitors 11,
High frequency matching circuit 10 for adjusting the capacity of 12 at the position of the parallel plate driving ball screw, and sequence control for driving the driving ball screws of the variable capacitors 11 and 12 to start discharging from the designated position. Controller 1
3 and means 16 for recording the position of the driving ball screw of the variable capacitors 11, 12 at which the reflected wave is minimized by the high frequency matching circuit 10 used by the controller 13 for each step of the film formation sequence control recipe. The variable capacitors 11 and 12 are driven with respect to the driving ball screw positions of the variable capacitors 11 and 12 of the high-frequency matching circuit 10 in which the reflected waves at each step of the recipe of the film formation sequence control used in the past are minimized. The controller 13 controls to start the discharge at a position where the position of the ball screw for use is shifted to the side opposite to the direction in which it operates at the same time as the start of the discharge.

When at least two kinds of different film qualities are successively formed on the same substrate, the reaction chamber 1 is supplied from the gas pipe 2 through the electrode plate gas holes 4 at each step of sequence control. By changing the type of material gas, the high frequency power supplied to the electrode 3 from the power source 5 and the temperature controlled by the heater 7 of the substrate holder 6, respectively,
Plasma is generated between the electrode 4 and the substrate 8. This time,
The deposition sequence used is the recipe for the deposition sequence control and the parallel plate driving of the variable capacitor for each step. The ball screw position is the recipe for the sequence control for the film deposition and the parallel plate driving of the variable capacitor for each step. A circuit for recording the position of the ball screw (hereinafter referred to as a recording circuit) 16 stores the reflected wave of the plasma impedance for each step and the variable capacitors 11 and 12 of the high frequency matching circuit 10 corresponding to this reflected wave. The position of the parallel plate driving ball screw is also taken into the recording circuit 16. When the film formation sequence control is completed, the sequence control recipe and the high frequency matching circuit 1 used for each step 1
The recording circuit 16 stores the position where the reflected wave is minimum at 0. The series of storage operations are stored in the recording circuit 16 via the sequence control controller 13.

Next, when a new substrate is formed in the reaction chamber 1, the sequence controller 13 checks with the recording circuit 16 whether the recipe is a recipe used in the past. If it is confirmed that the recipe used in the past is the result of the collation, the sequence controller 13 sends the position of the parallel-plate driving ball screw of the variable capacitor that minimizes the reflected wave. Sequence control controller 13
Is 10% in the direction opposite to the direction in which the parallel plate driving ball screw position of the variable capacitor 11 and the variable capacitor 12 is driven at the time of starting discharge, with respect to the position of the variable capacitor parallel plate driving ball screw that minimizes the reflected wave. From 10
Discharge is started at a position shifted in the range of 0%. As a result, the ball screws for driving the parallel plates of the variable capacitors 11 and 12 are driven toward the position where the impedance is minimized at the same time when the discharge is started.

10% of the distance between the driving ball screw position and the reference point of the variable capacitor of the high frequency matching circuit that minimizes the reflected wave at each step of the sequence control recipe for film formation used in the past. The discharge may be started at a position deviated within the range from 100% to 100%. Here, the reference point indicates the ball screw position for driving the variable capacitor of the high frequency matching circuit registered in the recipe for film formation sequence control. As in the conventional example, the capacitance is adjusted by driving the variable capacitor driving ball screw position by receiving the measurement result of the reflected wave in the reflected wave detection circuit 9.

As described above, in the P-CVD apparatus having the high-frequency plasma generation mechanism, at least two or more different film qualities are continuously changed on the substrate by changing the gas species, the gas flow rate, the gas pressure, and the high-frequency discharge power. When forming a film, it is possible to improve the film adhesion and the uniformity of the film adhesion of continuously formed films. FIG. 2 shows a scratch test result between SiNx and a-Si when SiNx and a-Si were continuously formed on the substrate. Portions corresponding to those of the conventional portion shown in FIGS. 1 and 3 are designated by the same reference numerals. 17 is the distribution of the number of peeled films when the film is formed with the apparatus configuration of FIG. 3, and 18 is the distribution of the number of peeled films when the film is formed with the apparatus configuration of FIG.

When the SiNx film and the a-Si film in the central portion 14 and the peripheral portion 15 of the substrate were each scratched at 100 points on the 1-mm square, a tape peeling test was carried out, and the film was formed with the apparatus configuration shown in FIG. Then, the number of peeled portions when the film was formed with the apparatus configuration of FIG. 3 was compared. As a result, the film peeling number distribution 18 when the film is formed by the apparatus configuration of FIG. 1 is smaller than the peeling number distribution 17 when the film is formed by the apparatus configuration of FIG. 3, and the substrate central portion 14 and the substrate peripheral portion 15 are formed. There is no difference in the number of peeled films. This is because when the a-Si film is formed in the apparatus configuration of FIG. 1, the parallel plate driving ball screws of the variable capacitor 11 and the variable capacitor 12 move in a direction in which the value of the reflected wave decreases at the same time as the discharge starts, This is because the reflected wave becomes the minimum value without driving the parallel flat plate driving ball screw in the opposite direction. At this time, the ball screw for driving the parallel plate does not cause a loss due to reciprocation, and moves to the minimum capacity for a-Si film formation. As a result, the time during which the discharge is unstable does not occur, and the film adhesion is improved as compared with the case of forming a film with the apparatus configuration of FIG. In addition, the film adhesion of the formed a-Si film depends on the substrate central portion 14 and the substrate peripheral portion 1.
The same applies to No. 5, and there is no difference in the film adhesion force within the substrate surface.

[0020]

According to the high frequency matching circuit mechanism of the chemical vapor deposition apparatus according to the first aspect of the present invention, the high frequency that minimizes the reflected wave at each step of the recipe for sequence control for film formation used in the past. The controller is controlled so that the driving position of the parallel plate of the variable capacitor of the matching circuit is shifted from the driving position of the parallel plate of the variable capacitor to the side opposite to the operating direction at the same time as the discharge is started. Therefore, the parallel-plate driving ball screw of the variable capacitor of the high-frequency matching circuit does not reciprocate to minimize the reflected wave, but the parallel-plate driving ball screw of the variable capacitor reaches the position where the reflected wave is minimized. For this reason, it is possible to improve the film adhesion and the uniformity of the film adhesion of the films continuously formed on the substrate.

According to the high frequency matching circuit mechanism of the chemical vapor deposition apparatus of the second aspect of the present invention, the high frequency matching circuit which minimizes the reflected wave at each step of the recipe of the sequence control for film formation used in the past. 10% to 1 for the distance between the driving position of the parallel plate of the variable capacitor of the circuit and the reference point
Since the controller controls the discharge so as to start the discharge at a position deviated in the range of 00%, the parallel flat plate driving ball screw of the variable capacitor of the high frequency matching circuit reaches the position where the reflected wave is minimized in a short distance. . For this reason, it is possible to improve the film adhesion and the uniformity of the film adhesion of the films continuously formed on the substrate.

[Brief description of drawings]

FIG. 1 is a schematic diagram of a P-CVD apparatus having a high frequency matching circuit mechanism according to an embodiment of the present invention.

FIG. 2 is a comparative explanatory diagram of scratch test results of a P-CVD apparatus having a high-frequency matching circuit mechanism according to an embodiment of the present invention and a conventional P-CVD apparatus having a high-frequency matching circuit mechanism.

FIG. 3 is a P-CVD having a conventional high frequency matching circuit mechanism.
Device schematic

FIG. 4 is a P-CVD having a conventional high frequency matching circuit mechanism.
Explanatory drawing of scratch test result of device

[Explanation of symbols]

1 Reaction Chamber 2 Gas Pipe 3 Electrode 4 Electrode Plate Gas Hole 5 Power Supply 6 Substrate Holder 7 Heater 8 Substrate 9 Reflected Wave Detection Circuit 10 High Frequency Matching Circuit 11 Variable Capacitor 12 Variable Capacitor 13 Sequence Control Controller 14 Substrate Central Part 15 Substrate Peripheral Part 16 circuit for recording the sequence control for film formation and the position of the ball screw for driving the parallel plate of the variable capacitor for each step 17 film peeling distribution during film formation by the conventional device structure 18 device structure of the embodiment Distribution of peeling number when film is formed

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 4G075 AA24 AA61 BC04 CA02 CA25                       DA02 EB01 EB42                 4K030 BA30 BA40 BB03 BB05 FA03                       KA30 KA41 KA45 LA15 LA18                 5F045 AA08 BB17 DP03 EB02 EH13                       EH19

Claims (2)

[Claims] 1. A chemical vapor phase having a high-frequency plasma generation mechanism for continuously forming at least two or more different film qualities on a substrate by changing gas species, gas flow rate, gas pressure and high-frequency discharge power. A high-frequency matching circuit mechanism for a growth apparatus, in which a high-frequency matching circuit that adjusts the capacitance of a variable capacitor at a driving position of a parallel plate and a parallel plate of the variable capacitor are driven to start discharging from a designated position And a means for recording the driving position of the parallel plate of the variable capacitor that minimizes the reflected wave in the high frequency matching circuit used for each step of the recipe of the film forming sequence control by the controller. , The variable capacitor of the high frequency matching circuit that minimizes the reflected wave at each step of the sequence control recipe for film deposition used in the past. The parallel plate of the variable capacitor is controlled by the controller so that the drive position of the parallel plate of the variable capacitor is shifted to the opposite side to the operation direction at the same time as the discharge is started. High frequency matching circuit mechanism of chemical vapor deposition equipment. 2. A chemical vapor phase having a high-frequency plasma generation mechanism for continuously forming films on at least two kinds of different films by changing gas species, gas flow rate, gas pressure and high-frequency discharge power. A high-frequency matching circuit mechanism for a growth apparatus, in which a high-frequency matching circuit that adjusts the capacitance of a variable capacitor at a driving position of a parallel plate and a parallel plate of the variable capacitor are driven to start discharging from a designated position And a means for recording the driving position of the parallel plate of the variable capacitor that minimizes the reflected wave in the high frequency matching circuit used for each step of the recipe of the film forming sequence control by the controller. , The variable capacitor of the high frequency matching circuit that minimizes the reflected wave at each step of the sequence control recipe for film deposition used in the past. The chemical vapor phase is controlled by the controller so as to start the discharge at a position displaced by 10% to 100% with respect to the distance between the driving position of the parallel plate of the sensor and the reference point. High frequency matching circuit mechanism for growth equipment.