JP2003095653A - Oxide superconductor and manufacturing method thereof - Google Patents
Oxide superconductor and manufacturing method thereofInfo
- Publication number
- JP2003095653A JP2003095653A JP2001289916A JP2001289916A JP2003095653A JP 2003095653 A JP2003095653 A JP 2003095653A JP 2001289916 A JP2001289916 A JP 2001289916A JP 2001289916 A JP2001289916 A JP 2001289916A JP 2003095653 A JP2003095653 A JP 2003095653A
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- Prior art keywords
- oxide superconductor
- molded body
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- temperature
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
(57)【要約】
【課題】 電気特性、磁気特性、機械強度に優れた湾曲
した酸化物超電導体およびこのような酸化物超電導体を
低コストで製造できる酸化物超電導体の製造方法を提供
する。
【解決手段】 RE化合物(REはYを含む1種または
2種以上の希土類金属元素)とBa化合物とCu化合物
とを含む原料混合体を、この原料混合体の融点より高い
温度で加熱溶融した後に、徐冷して結晶を成長させるこ
とによりRE−Ba−Cu−O系酸化物超電導体を製造
する方法において、所定の形状に段差を設けて配置され
たペレット片(12、23、33)を介してアルミナ基
板(12、22、32)上に成形体(11、21、3
1)を載置し、あるいはペレット片を介して所定の形状
に湾曲したアルミナ基板上に成形体を載置し、成形体を
加熱溶融した後に、種結晶(14、34)を設置して温
度保持および徐冷し、結晶化させる。
PROBLEM TO BE SOLVED: To provide a curved oxide superconductor excellent in electric characteristics, magnetic characteristics, and mechanical strength, and a method for manufacturing an oxide superconductor capable of manufacturing such an oxide superconductor at low cost. . SOLUTION: A raw material mixture containing an RE compound (RE is one or more rare earth metal elements containing Y), a Ba compound and a Cu compound is heated and melted at a temperature higher than the melting point of the raw material mixture. Later, in a method of manufacturing an RE-Ba-Cu-O-based oxide superconductor by growing crystals by slow cooling, pellet pieces (12, 23, 33) arranged with steps in a predetermined shape Via a molding (11, 21, 3) on an alumina substrate (12, 22, 32)
1) or a compact is placed on an alumina substrate curved into a predetermined shape via a pellet piece, and after heating and melting the compact, a seed crystal (14, 34) is set and temperature is set. Hold and slowly cool and allow to crystallize.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、酸化物超電導体お
よびその製造方法に関し、特に、バルクマグネット、磁
気軸受け、電流リード、磁気シールド、限流機などに使
用されるRE系の酸化物超電導体およびその製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxide superconductor and a method for manufacturing the same, and more particularly to an RE-based oxide superconductor used in bulk magnets, magnetic bearings, current leads, magnetic shields, current limiting devices and the like. And a manufacturing method thereof.
【0002】[0002]
【従来の技術】従来、RE化合物、Ba化合物およびC
u化合物を含む原料混合体を、この原料混合体の融点以
上の温度で加熱溶融した後に、温度勾配を加えながら徐
冷工程を行って結晶を成長させることにより、RE−B
a−Cu−O系酸化物超電導体を製造する方法として、
前駆体を板状に成形し、この前駆体を溶融した後、結晶
化直前の温度で種結晶を前駆体の上部に設置して、その
後、温度を保持または徐冷することによって、種結晶を
反映した平板状の配向結晶を作製する方法が知られてい
る。2. Description of the Related Art Conventionally, RE compounds, Ba compounds and C
The raw material mixture containing the u compound is heated and melted at a temperature equal to or higher than the melting point of the raw material mixture, and then a slow cooling step is performed while a temperature gradient is applied to grow a crystal.
As a method for producing an a-Cu-O-based oxide superconductor,
The precursor is molded into a plate shape, the precursor is melted, and then the seed crystal is placed on top of the precursor at a temperature immediately before crystallization, and then the temperature is maintained or gradually cooled to form a seed crystal. A method for producing a reflected flat plate-like oriented crystal is known.
【0003】[0003]
【発明が解決しようとする課題】しかし、上記の従来の
方法では、例えば、径方向の支持力が強い円筒状の磁気
軸受けを形成するためには、平板状の材料を、円筒を分
割した円弧状に湾曲した形状に加工しなければならず、
研削加工量が大きくなり、劣化や歩留の低下などの問題
があった。However, in the above-mentioned conventional method, for example, in order to form a cylindrical magnetic bearing having a strong radial supporting force, a flat plate-shaped material is divided into circles. Must be processed into a curved shape in an arc,
The amount of grinding process becomes large, and there are problems such as deterioration and reduction in yield.
【0004】また、適度なギャップを維持しながら希土
類系永久磁石との磁気反発および引力を十分に発生させ
るためには、1T程度の捕捉磁場特性が必要とされる
が、従来の材料を使用して、表面を曲率半径80mm以
下に湾曲させるように加工した場合には、マイクロクラ
ックなどの発生により、0.5T程度の捕捉磁場特性し
か得られないという問題があった。Further, in order to sufficiently generate magnetic repulsion and attractive force with a rare earth-based permanent magnet while maintaining an appropriate gap, a trapping magnetic field characteristic of about 1T is required, but a conventional material is used. Then, when the surface is processed so as to be curved with a radius of curvature of 80 mm or less, there is a problem that only trapping magnetic field characteristics of about 0.5 T can be obtained due to generation of microcracks.
【0005】したがって、本発明は、このような従来の
問題点に鑑み、電気特性、磁気特性、機械強度に優れた
湾曲した酸化物超電導体およびこのような酸化物超電導
体を歩留まり良く低コストで製造できる酸化物超電導体
の製造方法を提供することを目的とする。Therefore, in view of such conventional problems, the present invention provides a curved oxide superconductor excellent in electrical characteristics, magnetic characteristics, and mechanical strength, and a high yield of such oxide superconductor at low cost. An object is to provide a method for producing an oxide superconductor that can be produced.
【0006】[0006]
【課題を解決するための手段】本発明者らは、上記課題
を達成するに鋭意研究した結果、RE化合物(REはY
を含む1種または2種以上の希土類金属元素)とBa化
合物とCu化合物とを含む原料混合体を、この原料混合
体の融点より高い温度で加熱溶融した後に、徐冷して結
晶を成長させることによりRE−Ba−Cu−O系の酸
化物超電導体を製造する方法において、原料混合体を板
状に成形して成形体を作製し、上面の高さが不均一にな
るように基板上に配置された介在物を介して、成形体を
基板上に載置し、成形体を加熱溶融して湾曲させた後
に、徐冷して結晶成長させることにより、電気特性、磁
気特性、機械強度に優れた湾曲したRE−Ba−Cu−
O系酸化物超電導体を歩留まり良く低コストで製造でき
ることを見出し、本発明を完成するに至った。Means for Solving the Problems As a result of earnest research to achieve the above-mentioned objects, the present inventors have found that RE compounds (RE is Y
A raw material mixture containing one or more rare earth metal elements containing Al), a Ba compound and a Cu compound is heated and melted at a temperature higher than the melting point of the raw material mixture, and then slowly cooled to grow crystals. In the method for producing a RE-Ba-Cu-O-based oxide superconductor by the above, the raw material mixture is formed into a plate shape to form a formed body, and the height of the upper surface of the substrate is made nonuniform. The molded body is placed on the substrate via the inclusions placed in the substrate, and the molded body is heated and melted to bend it, and then gradually cooled to grow crystals, thereby obtaining electrical characteristics, magnetic characteristics, and mechanical strength. Excellent curved RE-Ba-Cu-
The inventors have found that an O-based oxide superconductor can be manufactured with high yield and at low cost, and have completed the present invention.
【0007】すなわち、本発明による酸化物超電導体の
製造方法は、 RE化合物(REはYを含む1種または
2種以上の希土類金属元素)とBa化合物とCu化合物
とを含む原料混合体を、この原料混合体の融点より高い
温度で加熱溶融した後に、徐冷して結晶を成長させるこ
とによりRE−Ba−Cu−O系の酸化物超電導体を製
造する方法において、原料混合体を板状に成形して成形
体を作製し、上面の高さが不均一になるように基板上に
配置された介在物を介して、成形体を基板上に載置し、
成形体を加熱溶融して湾曲させた後に、徐冷して結晶成
長させることを特徴とする。That is, the method for producing an oxide superconductor according to the present invention comprises a raw material mixture containing a RE compound (RE is one or more rare earth metal elements containing Y), a Ba compound and a Cu compound, In the method for producing an RE-Ba-Cu-O-based oxide superconductor by heating and melting at a temperature higher than the melting point of this raw material mixture, and then gradually cooling it to grow crystals, the raw material mixture is formed into a plate shape. To form a molded body, and the molded body is placed on the substrate through an interposition that is arranged on the substrate so that the height of the upper surface becomes uneven,
It is characterized in that the molded body is heated and melted to be curved, and then gradually cooled to grow crystals.
【0008】この酸化物超電導体の製造方法において、
基板として平板状の基板または上面が湾曲した形状の基
板を使用することができる。平板状の基板を使用する場
合には、介在物としてRE化合物とBa化合物とCu化
合物のうちの1種以上の化合物を含む敷き板を使用し、
上面が湾曲した形状の基板を使用する場合には、介在物
としてRE化合物とBa化合物とCu化合物のうちの1
種以上の化合物を含む敷き板または粉末を使用するのが
好ましい。In this method for producing an oxide superconductor,
As the substrate, a flat substrate or a substrate having a curved upper surface can be used. When a flat substrate is used, a floor board containing at least one compound of RE compound, Ba compound and Cu compound as an inclusion is used.
When a substrate having a curved upper surface is used, one of RE compound, Ba compound and Cu compound is used as an inclusion.
Preference is given to using bedding boards or powders which contain one or more compounds.
【0009】また、酸化物超電導体の製造方法におい
て、成形体を加熱溶融して湾曲させた後に、成形体に種
結晶を設置して、その後、徐冷して結晶成長させるよう
にしてもよい。あるいは、成形体を加熱溶融して湾曲さ
せた後に、成形体の上部が低温側になるように成形体の
上下に1乃至30℃/cmの温度勾配を加えた後、種結
晶を設置して、その後、成形体を徐冷して結晶成長させ
るようにしてもよい。In the method for producing an oxide superconductor, the molded body may be heated and melted to be curved, and then a seed crystal may be placed on the molded body, followed by gradual cooling for crystal growth. . Alternatively, after heat-melting and bending the molded body, a temperature gradient of 1 to 30 ° C./cm is applied to the upper and lower sides of the molded body so that the upper side of the molded body is on the low temperature side, and then a seed crystal is installed. After that, the molded body may be gradually cooled to grow crystals.
【0010】さらに、この酸化物超電導体の製造方法に
おいて、成形体を加熱溶融する温度を、成形体がRE
2+rBa1+s(Cu1−dAgd)O5−y相およ
びRE 4+rBa2+s( Cu1−dAgd )2O
10−y相(−0.2≦r≦0.2、−0.2≦s≦
0.2、0≦d≦0.05、−0.2≦y≦0.2)の
少なくとも一方の相と液相になる温度にするのが好まし
い。Furthermore, in the method for producing this oxide superconductor,
The temperature at which the compact is heated and melted
2 + rBa1 + s(Cu1-dAgd) O5-yPhase
And RE 4 + rBa2 + s(Cu1-dAgd )TwoO
10-yPhase (-0.2≤r≤0.2, -0.2≤s≤
0.2, 0 ≦ d ≦ 0.05, −0.2 ≦ y ≦ 0.2)
It is preferable to have a temperature at which at least one phase is in the liquid phase.
Yes.
【0011】また、本発明による酸化物超電導体は、R
E1+pBa2+q(Cu1−bAgb)3O
7−x(REは1種または2種以上の希土類金属元素、
−0.2≦p≦0.2、−0.2≦q≦0.2、0≦b
≦0.05、−0.2≦x≦0.6)相中に、RE
2+rBa1+s(Cu1−dAgd)O5−y相およ
びRE4+ rBa2+s( Cu1−dAgd )2O
10−y相(−0.2≦r≦0.2、−0.2≦s≦
0.2、0≦d≦0.05、−0.2≦y≦0.2)の
少なくとも一方の相が微細に分散した酸化物超電導体に
おいて、この酸化物超電導体の表面の少なくとも一部が
80mm以下の曲率半径になるように湾曲し、且つ1T
以上の捕捉磁場特性を有することを特徴とする。The oxide superconductor according to the present invention has R
E 1 + p Ba 2 + q (Cu 1-b Ag b) 3 O
7-x (RE is one or more rare earth metal elements,
−0.2 ≦ p ≦ 0.2, −0.2 ≦ q ≦ 0.2, 0 ≦ b
≦ 0.05, −0.2 ≦ x ≦ 0.6) phase, RE
2 + r Ba 1 + s (Cu 1-d Ag d ) O 5-y phase and RE 4+ r Ba 2 + s (Cu 1-d Ag d ) 2 O
10-y phase (-0.2≤r≤0.2, -0.2≤s≤
0.2, 0 ≦ d ≦ 0.05, −0.2 ≦ y ≦ 0.2) in an oxide superconductor in which at least one phase is finely dispersed, and at least a part of the surface of the oxide superconductor. Is curved to have a radius of curvature of 80 mm or less, and 1T
It is characterized by having the above trapping magnetic field characteristics.
【0012】この酸化物超電導体において、酸化物超電
導体が、8wt%乃至60wt%のAgを含むのが好ま
しい。また、酸化物超電導体が、Pt、Pd、Ru、R
h、Ir、Os、Re、Ceの金属およびこれらの金属
の化合物から選ばれる1種以上を0.05wt%乃至5
wt%(化合物の場合はその金属のみの元素重量で示
す)含むのが好ましい。さらに、REがNd、Sm、G
d、Dyから選ばれる1種または2種以上の元素を少な
くとも50%以上含むのが好ましい。In this oxide superconductor, it is preferable that the oxide superconductor contains 8 wt% to 60 wt% of Ag. Further, the oxide superconductor is Pt, Pd, Ru, R.
One or more kinds selected from metals of h, Ir, Os, Re, Ce and compounds of these metals are used in an amount of 0.05 wt% to 5%.
It is preferable to include wt% (in the case of a compound, it is indicated by the element weight of only the metal). Furthermore, RE is Nd, Sm, G
It is preferable to contain at least 50% of one or more elements selected from d and Dy.
【0013】[0013]
【発明の実施の形態】本発明による酸化物超電導体の製
造方法の実施の形態では、RE化合物(REはYを含む
1種または2種以上の希土類金属元素)とBa化合物と
Cu化合物とを含む原料混合体を、この原料混合体の融
点より高い温度で加熱溶融した後に、徐冷して結晶を成
長させることによりRE−Ba−Cu−O系の酸化物超
電導体を製造する方法において、原料混合体を板状に成
形して成形体を作製し、RE化合物とBa化合物とCu
化合物のうちの1種以上の化合物を含み且つ上面の高さ
が不均一になるように基板上に配置された敷き板を介し
て、成形体を基板上に載置し、この成形体がRE2+r
Ba1+s(Cu1−dAgd)O5−y相およびRE
4+rBa2+s( Cu1−dAgd )2O10−y
相(−0.2≦r≦0.2、−0.2≦s≦0.2、0
≦d≦0.05、−0.2≦y≦0.2)の少なくとも
一方の相と液相になる温度Tm以上(好ましくはTm+
50℃からTm+200℃の範囲)で成形体を溶融し、
敷き板の段差に沿って成形体を湾曲させ、その後、これ
らの相の包晶反応によりRE1+pBa2+q(Cu
1−bAgb)3O7−x相が晶出する温度Tmの直前
(好ましくはTm+20℃からTm+0℃)まで徐冷
し、成形体の上部が低温側になるように成形体の上下に
温度勾配を加えた後、成形体の上部に種結晶を設置し
て、その後、RE1+pBa 2+q(Cu1−bA
gb)3O7−x相が晶出する温度よりやや低い温度
(好ましくはTm−2℃からTm−20℃)まで降温し
て温度保持することにより、湾曲した成形体の上部を水
平方向に結晶成長させ、その後、徐冷することにより成
形体を上から下に結晶成長させる。BEST MODE FOR CARRYING OUT THE INVENTION Manufacture of an oxide superconductor according to the present invention
In an embodiment of the fabrication method, a RE compound (RE comprises Y
One or more rare earth metal elements) and Ba compounds
The raw material mixture containing a Cu compound is melted.
After melting by heating at a temperature higher than the point, it is slowly cooled to form crystals.
By increasing the length of the RE-Ba-Cu-O-based oxide
In the method of manufacturing an electric conductor, the raw material mixture is formed into a plate shape.
Shaped to make a molded body, RE compound, Ba compound and Cu
Height of top surface containing one or more of the compounds
Through the floor plate placed on the substrate so that the
And place the molded body on the substrate.2 + r
Ba1 + s(Cu1-dAgd) O5-yPhase and RE
4 + rBa2 + s(Cu1-dAgd )TwoO10-y
Phase (-0.2≤r≤0.2, -0.2≤s≤0.2, 0
≦ d ≦ 0.05, −0.2 ≦ y ≦ 0.2)
The temperature at which one phase becomes liquid phase or above Tm (preferably Tm +
Melting the molded body in the range of 50 ° C. to Tm + 200 ° C.,
Bend the molded body along the steps of the floorboard, and then
RE by the peritectic reaction of these phases1 + pBa2 + q(Cu
1-bAgb)ThreeO7-xImmediately before the temperature Tm at which the phase crystallizes
Gradually cool from (preferably Tm + 20 ℃ to Tm + 0 ℃)
The upper and lower sides of the compact so that the top of the compact is on the low temperature side.
After applying a temperature gradient, place a seed crystal on top of the compact.
And then RE1 + pBa 2 + q(Cu1-bA
gb)ThreeO7-xTemperature slightly lower than the temperature at which the phase crystallizes
(Preferably from Tm-2 ° C to Tm-20 ° C)
Temperature to maintain the temperature,
Crystals are grown in the horizontal direction and then gradually cooled
The crystals are grown from top to bottom.
【0014】敷き板としてRE化合物とBa化合物とC
u化合物のうちの1種以上の化合物を含む敷き板を使用
すると、基板側から成形体に不純物元素が侵入したり、
成形体の組成ズレを抑制することができる。RE compound, Ba compound, and C as a floor board
When a floorboard containing one or more compounds of the u compound is used, an impurity element may enter the molded body from the substrate side,
It is possible to suppress the composition deviation of the molded body.
【0015】成形体を載置する基板として、所定の曲率
で湾曲した基板を使用すると、製造する酸化物超電導体
の曲率を精密に制御することができる。この場合、敷き
板の代わりに、RE化合物とBa化合物とCu化合物の
うちの1種以上の化合物を含む粉末を使用することもで
きる。また、この基板として、アルミナ、マグネシア、
ジルコニアなどのセラミックス基板や、成形体よりも融
点が高い金属からなる基板などを使用することができ
る。また、RE化合物とBa化合物とCu化合物を原料
とし、必要に応じてAgやPtを添加して所定の組成に
調整した原料混合体を溶融結晶化して作製した材料を使
用すれば、基板からの不純物の侵入を抑制するととも
に、湾曲した表面における電磁気特性を高めることがで
きる。When a substrate curved with a predetermined curvature is used as the substrate on which the molded body is placed, the curvature of the oxide superconductor to be manufactured can be precisely controlled. In this case, powder containing one or more compounds of the RE compound, the Ba compound and the Cu compound may be used instead of the floor plate. Also, as this substrate, alumina, magnesia,
It is possible to use a ceramic substrate such as zirconia or a substrate made of a metal having a melting point higher than that of the molded body. Further, if a material prepared by melting and crystallizing a raw material mixture prepared by using RE compounds, Ba compounds and Cu compounds as raw materials and adding Ag or Pt as needed to adjust to a predetermined composition is used, It is possible to suppress the entry of impurities and enhance the electromagnetic characteristics on the curved surface.
【0016】また、上面が凹状の材料の上面の中心に種
結晶を設置し、所定の過冷却度および温度勾配を与えて
温度保持を行うことにより、上面が凹状の材料において
も結晶性の良い材料を得ることができる。Further, a seed crystal is placed at the center of the upper surface of a material having a concave upper surface, and a predetermined supercooling degree and a temperature gradient are applied to maintain the temperature, so that the material having a concave upper surface has good crystallinity. The material can be obtained.
【0017】また、成形体がRE2+rBa1+s(C
u1−dAgd)O5−y相およびRE4+rBa
2+s( Cu1−dAgd )2O10−y相の少なく
とも一方の相と液相になる温度Tm(溶融状態から降温
した場合のRE1+pBa2+q(Cu1−bAgb)
3O7−x相の結晶化温度と同じ)は、各希土類元素を
使用した場合には、図1に示すような温度であり、さら
にAgを添加した場合には、各温度を基準にして、Ag
の添加量とともに図2に示すように変化する。なお、希
土類元素を複数混合した場合には、図1に示す温度に各
希土類元素のモル比率を掛けて加えた値になる。Further, the molded body is RE 2 + r Ba 1 + s (C
u 1-d Ag d ) O 5-y phase and RE 4 + r Ba
2 + s (Cu 1-d Ag d ) 2 O 10-y At least one of the phases and the temperature Tm at which it becomes a liquid phase (RE 1 + p Ba 2 + q (Cu 1-b Ag b ) when the temperature is lowered from the molten state)
The same as the crystallization temperature of the 3 O 7-x phase) is the temperature as shown in FIG. 1 when each rare earth element is used, and when Ag is added, the temperature is based on each temperature. , Ag
As shown in FIG. When a plurality of rare earth elements are mixed, the temperature is the value shown in FIG. 1 multiplied by the molar ratio of each rare earth element and added.
【0018】このような手法によると、研削などの加工
による劣化や歩留まりの低下を生じることなく、電磁気
特性に優れ且つ所定の曲率を有する湾曲した酸化物超電
導体を製造することが可能となる。また、表面の一部が
80mm以下の曲率半径になるように湾曲した場合で
も、その曲率を有する表面における最大捕捉磁束密度特
性が1T以上の酸化物超電導体を得ることが可能にな
る。According to such a method, it is possible to manufacture a curved oxide superconductor having excellent electromagnetic characteristics and a predetermined curvature without causing deterioration due to processing such as grinding and reduction in yield. Further, even when a part of the surface is curved to have a radius of curvature of 80 mm or less, it becomes possible to obtain an oxide superconductor having a maximum trapped magnetic flux density characteristic of 1 T or more on the surface having the curvature.
【0019】また、RE−Ba−Cu−O系の酸化物超
電導体において、REがNd、Sm、Gd、Dyから選
ばれる1種または2種以上の元素を少なくとも50%以
上含む場合や、RE1+pBa2+q(Cu1−bAg
b)3O7−x相中に分散するRE2+rBa
1+s(Cu1−dAgd)O5−y相およびRE
4+rBa 2+s( Cu1−dAgd )2O10−y
相のRE2+rBa1+s(Cu1 −dAgd)O
5−y相およびRE4+rBa2+s( Cu1−dA
gd )2O10−y相に対するモル比率が1:0.3
より少ない場合には、高磁場における臨界電流密度特性
を高め、厚さ方向の結晶性も均一にすることができる。In addition, the RE-Ba-Cu-O-based oxide
In the conductor, RE is selected from Nd, Sm, Gd and Dy.
At least 50% or more of one or two or more elements
Including the above, RE1 + pBa2 + q(Cu1-bAg
b)ThreeO7-xRE dispersed in phase2 + rBa
1 + s(Cu1-dAgd) O5-yPhase and RE
4 + rBa 2 + s(Cu1-dAgd )TwoO10-y
RE of phase2 + rBa1 + s(Cu1 -DAgd) O
5-yPhase and RE4 + rBa2 + s(Cu1-dA
gd )TwoO10-yThe molar ratio to the phase is 1: 0.3
If less, the critical current density characteristics in high magnetic fields
And the crystallinity in the thickness direction can be made uniform.
【0020】さらに、5wt%以上のAgを含有させる
と、AgがRE1+pBa2+q(Cu1−bAgb)
3O7−x相中に微細に分散して機械強度が向上すると
ともに、上下方向の組成ズレが抑制されて、より大型で
結晶欠陥の少ない酸化物超電導体を製造することができ
る。特に、Agの添加量が15wt%±5wt%程度の
場合には、結晶成長温度が安定し、最も高特性の材料を
得ることができる。一方、60wt%以上のAgを含む
ようにすると、超電導体の体積分率が低すぎて、臨界電
流密度などの特性が低くなる。Further, when Ag is contained in an amount of 5 wt% or more, Ag becomes RE 1 + p Ba 2 + q (Cu 1-b Ag b ).
It is finely dispersed in the 3 O 7-x phase to improve the mechanical strength, and the composition deviation in the vertical direction is suppressed, so that a larger oxide superconductor with less crystal defects can be manufactured. In particular, when the added amount of Ag is about 15 wt% ± 5 wt%, the crystal growth temperature is stable and the material with the highest characteristics can be obtained. On the other hand, when Ag is contained in an amount of 60 wt% or more, the volume fraction of the superconductor is too low and the characteristics such as the critical current density are deteriorated.
【0021】さらに、上記の酸化物超電導体が、Pt、
Pd、Ru、Rh、Ir、Os、Re、Ceの金属およ
びこれらの金属の化合物から選ばれる1種以上を0.0
5〜5wt%(化合物の場合はその金属のみの元素重量
で示す)含むようにすると、RE2+rBa1+s(C
u1−dAgd)O5−y相やRE4+rBa
2+s( Cu1−dAgd )2O10−y相を微細に
する効果がある。Further, the above oxide superconductor is Pt,
One or more selected from the metals of Pd, Ru, Rh, Ir, Os, Re and Ce and compounds of these metals are used in an amount of 0.0
If it is contained in an amount of 5 to 5 wt% (in the case of a compound, it is indicated by the element weight of only that metal), RE 2 + r Ba 1 + s (C
u 1-d Ag d ) O 5-y phase and RE 4 + r Ba
2 + s (Cu 1-d Ag d) 2 O 10-y phase the effect of the fine.
【0022】[0022]
【実施例】以下、実施例に基づいて本発明による酸化物
超電導体およびその製造方法について詳細に説明する。EXAMPLES The oxide superconductor and the method for producing the same according to the present invention will be described in detail below based on examples.
【0023】[実施例1]Sm2O3、BaCO3、C
uOの各原料粉末をSm:Ba:Cu=1.4:2.
2:3.2になるように秤量した後、BaCO3とCu
Oのみを880℃で30時間焼成して、BaCuO2と
CuOの仮焼粉を得た(モル比でBaCuO 2:CuO
=2.2:1.0)。次に、この仮焼粉に、予め秤量し
ておいたSm 2O3とPt粉末(平均粒径0.01μ
m)およびAg2O粉末(平均粒径13.8μm)を、
Pt含有量が0.42wt%、Ag含有量が15wt%
になるように加えて混合して、大気中900℃で10時
間焼成した。この仮焼粉をライカイ機で粉砕して、平均
粒径約2μmとした。[Example 1] SmTwoOThree, BaCOThree, C
uO raw material powders were mixed with Sm: Ba: Cu = 1.4: 2.
After weighing so as to be 2: 3.2, BaCOThreeAnd Cu
Ba only O for 30 hours at 880 ° C.TwoWhen
A calcined powder of CuO was obtained (BaCuO in molar ratio). Two: CuO
= 2.2: 1.0). Next, weigh this calcined powder in advance.
Sm saved TwoOThreeAnd Pt powder (average particle size 0.01μ
m) and AgTwoO powder (average particle size 13.8 μm)
Pt content 0.42 wt%, Ag content 15 wt%
And mix until it becomes 10 minutes at 900 ° C in the air.
Fired for a while. This calcined powder is crushed with a raikai machine and averaged
The particle size was about 2 μm.
【0024】得られた仮焼粉の組成分析を行ったとこ
ろ、図3に示すような値であった。また、得られた仮焼
粉を粉末X線回折により分析したところ、Sm1+pB
a2+ q(Cu1−bAgb)3O7−x相およびSm
2+rBa1+s(Cu1−dAgd)O5−r相が確
認された。ここで、Tmは、図1および図2から計算す
ると、1060−40=1020℃である。When the composition of the obtained calcined powder was analyzed, the values were as shown in FIG. Moreover, when the obtained calcined powder was analyzed by powder X-ray diffraction, it was found that Sm 1 + p B
a 2+ q (Cu 1-b Ag b) 3 O 7-x phase and Sm
2 + r Ba 1 + s ( Cu 1-d Ag d) O 5-r phase was confirmed. Here, Tm is calculated from FIG. 1 and FIG. 2, and is 1060-40 = 1020 degreeC.
【0025】このようにして作製された合成粉を縦60
mm、横39mm、厚さ25mmの平板状にプレス成形
して成形体11を作製した。次に、図4に示すように、
アルミナ基板12上に、成形体11と同一組成の原料を
使用して後述する成形体11の溶融結晶化工程と同様の
工程により予め作製しておいた縦39mm、横13m
m、厚さ2mm程度の複数のペレット片13を、所定の
間隔だけ離間して略平行に且つ略同じ高さになるように
積み上げるとともに、これらの間の略中間に略平行に且
つ高さが低くなるように敷いた。次いで、両側に積み上
げられたペレット片13の上に成形体11を載置して、
成形体11の底面の長手方向(縦方向)両側の部分が両
側に積み上げられた略同じ高さのペレット片13に支持
されるようにし、2ゾーン型の炉体内に設置して以下の
工程を行った。The synthetic powder produced in this way is put in the vertical direction 60
mm, the width 39 mm, and the thickness 25 mm were pressed into a flat plate to prepare a molded body 11. Next, as shown in FIG.
39 mm long and 13 m wide prepared on the alumina substrate 12 in advance by using a raw material having the same composition as that of the molded body 11 in the same process as the melt crystallization step of the molded body 11 described later.
A plurality of pellet pieces 13 having a thickness of about 2 mm and a thickness of about 2 mm are stacked at a predetermined interval so as to be substantially parallel to each other and have substantially the same height. I laid it down. Then, the molded body 11 is placed on the pellet pieces 13 stacked on both sides,
The parts on both sides in the longitudinal direction (longitudinal direction) of the bottom surface of the molded body 11 are supported by the pellet pieces 13 of substantially the same height, which are stacked on both sides, and are installed in a two-zone type furnace body to perform the following steps. went.
【0026】まず、室温から70時間で1100℃まで
昇温させ、この温度で20分間保持して、Sm2+rB
a1+s(Cu1−dAgd)O5−y相と液相が存在
する半溶融状態にすることにより、成形体11の長手方
向の略中央部分が高さの低いペレット片13に支持され
るようにして、成形体11の上面が凹状で下面が凸状に
なるように成形体11を湾曲させた。その後、成形体1
1の上部が低温側になるように成形体11の上下に10
℃/cmの温度勾配を加えて、成形体11の上部の温度
が1025℃になるまで0.4℃/minで降温させ
た。次いで、予め溶融法で作製しておいたPtを0.5
wt%含み且つAgを含まない縦横2mm、厚さ1mm
のNd1.8Ba2.4Cu3.4Ox組成の種結晶1
4(図5を参照)を、成長方向がc軸と平行になるよう
に、上面が凹状になるように湾曲した成形体11の上面
の中心に接触させ、1025℃から1℃/hrの速度で
1015℃まで降温させた。この温度で60時間保持し
た後、945℃まで70時間かけて徐冷し、その後、上
下の温度勾配が0℃/cmになるように成形体11の下
部を20時間で945℃になるように冷却し、その後、
室温まで100時間かけて徐冷して結晶化を行った。First, the temperature was raised from room temperature to 1100 ° C. in 70 hours and kept at this temperature for 20 minutes to obtain Sm 2 + r B
a 1 + s (Cu 1-d Ag d ) O 5-y By making a semi-molten state in which a phase and a liquid phase exist, the substantially central portion in the longitudinal direction of the molded body 11 is supported by the pellet piece 13 having a low height. Thus, the molded body 11 was curved so that the upper surface of the molded body 11 was concave and the lower surface thereof was convex. After that, molded body 1
1 so that the upper part of 1 is on the low temperature side
A temperature gradient of ° C / cm was applied, and the temperature was lowered at 0.4 ° C / min until the temperature of the upper part of the molded body 11 reached 1025 ° C. Next, Pt which was previously prepared by the melting method was added to 0.5
2 mm in length and width, containing 1 wt% and not including Ag, thickness 1 mm
Seed crystal 1 of Nd 1.8 Ba 2.4 Cu 3.4 O x composition
4 (see FIG. 5) is brought into contact with the center of the upper surface of the molded body 11 which is curved so that the upper surface is concave so that the growth direction is parallel to the c-axis, and the speed is 1025 ° C. to 1 ° C./hr. The temperature was lowered to 1015 ° C. After holding at this temperature for 60 hours, it is gradually cooled to 945 ° C. over 70 hours, and then the lower part of the molded body 11 is heated to 945 ° C. for 20 hours so that the upper and lower temperature gradients become 0 ° C./cm. Cool, then
Crystallization was performed by gradually cooling to room temperature over 100 hours.
【0027】このようにして結晶化した材料をガス置換
可能な別の炉の中に設置し、以下のようにアニール処理
を行った。まず、ロータリーポンプで0.1Torrま
で炉内を排気した後、炉内に酸素ガスを流し込んで、酸
素分圧が99%以上である大気圧の雰囲気にした。その
後も0.5L/minの流量で酸素ガスを炉内に流しな
がら、室温から450℃まで10時間で昇温させ、45
0℃から250℃まで200時間かけて徐冷し、250
℃から室温まで10時間で降温させた。その後、同様の
アニール処理をもう一回行った。The material crystallized in this way was placed in another furnace capable of gas replacement and annealed as follows. First, the inside of the furnace was evacuated to 0.1 Torr by a rotary pump, and then oxygen gas was flown into the furnace to create an atmospheric pressure atmosphere with an oxygen partial pressure of 99% or more. Thereafter, while flowing oxygen gas at a flow rate of 0.5 L / min in the furnace, the temperature was raised from room temperature to 450 ° C. in 10 hours, and 45
Gradually cool from 0 ℃ to 250 ℃ over 200 hours
The temperature was lowered from 0 ° C. to room temperature in 10 hours. Then, the same annealing treatment was performed once again.
【0028】このアニール処理の後、図5に示すように
上面が凹状で下面が凸状になるように湾曲した成形体1
1は、焼き縮みのため、縦50mm、横33mm、厚さ
20mmになり、上面の曲率半径は約60mm、下面の
曲率半径は約80mmであった。この成形体11を上下
方向の中心付近で切断して断面をEPMAで観察したと
ころ、Sm1+pBa2+q(Cu1−bAgb)3O
7−x相中に0.1〜30μm程度のSm2+rBa
1+s(Cu1−dAgd)O5−y相が微細に分散し
ていた。ここで、p、q、r、s、yはそれぞれ−0.
2〜0.2の値であり、xは−0.2〜0.6の値であ
った。また、b、dは0.0〜0.05の値であり、平
均的には0.008程度であった。さらに、試料全体に
わたって0.1〜100μm程度のAgが微細に分散し
ていた。また、粒径5〜200μm程度の空孔が分散し
て存在していた。また、材料全体が種結晶を反映して、
図5に示すように、中心の厚さ方向がc軸と平行になる
ように均一に配向し、隣接する結晶間の方位のずれが3
°以下であり、実質的に単結晶状の超電導材料が得られ
た。After this annealing treatment, a molded body 1 having a concave upper surface and a convex lower surface as shown in FIG.
No. 1 had a length of 50 mm, a width of 33 mm, and a thickness of 20 mm due to shrinkage, and the upper surface had a radius of curvature of about 60 mm and the lower surface had a radius of curvature of about 80 mm. When this molded body 11 was cut near the center in the vertical direction and the cross section was observed with EPMA, it was found that Sm 1 + p Ba 2 + q (Cu 1-b Ag b ) 3 O.
Sm 2 + r Ba of about 0.1 to 30 μm in the 7-x phase
The 1 + s (Cu 1-d Ag d ) O 5-y phase was finely dispersed. Here, p, q, r, s, and y are −0.
The value was 2 to 0.2, and x was the value from -0.2 to 0.6. Further, b and d have a value of 0.0 to 0.05, and are about 0.008 on average. Further, Ag of about 0.1 to 100 μm was finely dispersed throughout the entire sample. In addition, pores having a particle size of about 5 to 200 μm were dispersed and existed. Also, the entire material reflects the seed crystal,
As shown in FIG. 5, the crystals are uniformly oriented so that the central thickness direction is parallel to the c-axis, and the misalignment between the adjacent crystals is 3
The temperature was at most 0 °, and a superconducting material having a substantially single crystal form was obtained.
【0029】次に、中心の厚さ方向と平行に外部磁場2
T(テスラ)を加えながら室温から温度77Kまで冷却
した後、磁場を取り去って超電導体中に捕捉される磁束
密度を測定した。この測定は、ホール素子をXYステー
ジに取り付けて超電導体表面から約1mmの距離で超電
導体の凹状の表面に沿って移動させ、中心の厚さ方向に
対して垂直な成分の磁束密度分布を測定することによっ
て行った。その結果、図6に示すように、均一な磁場分
布を示し、最大捕捉磁場は1.2Tであり、高い捕捉磁
束密度特性を示した。Next, an external magnetic field 2 is formed parallel to the thickness direction of the center.
After cooling from room temperature to 77K while adding T (Tesla), the magnetic field was removed and the magnetic flux density trapped in the superconductor was measured. In this measurement, the Hall element was attached to the XY stage and moved along the concave surface of the superconductor at a distance of about 1 mm from the surface of the superconductor, and the magnetic flux density distribution of the component perpendicular to the thickness direction of the center was measured. I went by. As a result, as shown in FIG. 6, a uniform magnetic field distribution was shown, the maximum trapping magnetic field was 1.2 T, and high trapping magnetic flux density characteristics were shown.
【0030】次に、この材料の中心付近から2.5×
2.5×2mmの試料を切り出して、SQUID磁束計
により磁化率を測定した。得られた磁化率曲線よりBe
anモデルを適用して、温度77Kにおける臨界電流密
度Jcを見積もったところ、図7に示すように高い臨界
電流密度を示した。Next, 2.5 × from near the center of this material
A 2.5 × 2 mm sample was cut out and the magnetic susceptibility was measured by an SQUID magnetometer. Be from the obtained magnetic susceptibility curve
When an an model was applied to estimate the critical current density Jc at a temperature of 77K, a high critical current density was shown as shown in FIG. 7.
【0031】[実施例2]Gd2O3、BaCO3、C
uOの各原料粉末をGd:Ba:Cu=1:2:3にな
るように秤量した後、混合し、920℃で30時間焼成
した。次いで、この焼成した粉をポットミルを使用して
平均粒径3μmに粉砕し、再び930℃で30時間焼成
した後、ライカイ機により平均粒径10μmに粉砕し
て、Gd1Ba2Cu3O7−xの粉末を作製した。ま
た、上記の各原料粉末をGd:Ba:Cu=2:1:1
になるように秤量した後、混合し、890℃で20時間
焼成した。次いで、この焼成した粉をポットミルを使用
して平均粒径0.7μmに粉砕し、再び890℃で20
時間焼成した後、この焼成した粉をポットミルを使用し
て平均粒径0.5μmに粉砕して、Gd2BaCuO5
の粉末を作製した。次に、これらの仮焼粉をGd1Ba
2Cu3O7−x:Gd2BaCuO5=1:0.4に
なるように秤量し、さらにPt粉末(平均粒径0.01
μm)およびAg 2O粉末(平均粒径13.8μm)を
Pt含有量が0.42wt%、Ag含有量が15wt%
になるように加えて混合した。ここで、Tmは、図1お
よび図2から計算すると、1030−40=990℃で
ある。[Embodiment 2] GdTwoOThree, BaCOThree, C
uO raw material powders were changed to Gd: Ba: Cu = 1: 2: 3
So that it is weighed, then mixed and baked at 920 ° C for 30 hours
did. This baked powder is then used in a pot mill
Grind to an average particle size of 3 μm and fire again at 930 ° C for 30 hours
After crushing, crush it to an average particle size of 10 μm with a raikai machine.
Gd1BaTwoCuThreeO7-xPowder was prepared. Well
In addition, each of the above raw material powders is Gd: Ba: Cu = 2: 1: 1
And then mix and mix at 890 ° C for 20 hours.
Baked. Then use this baked powder in a pot mill
And crushed to an average particle size of 0.7 μm, and again at 890 ° C for 20
After firing for an hour, use this pot powder in a pot mill.
Crushed to an average particle size of 0.5 μm and GdTwoBaCuO5
Powder was prepared. Next, these calcined powders are Gd1Ba
TwoCuThreeO7-x: GdTwoBaCuO5= 1: 0.4
So that Pt powder (average particle size 0.01
μm) and Ag TwoO powder (average particle size 13.8 μm)
Pt content 0.42 wt%, Ag content 15 wt%
And mixed. Here, Tm is as shown in FIG.
And calculated from FIG. 2, at 1030-40 = 990 ° C.
is there.
【0032】このようにして作製された合成粉を縦60
mm、横39mm、厚さ25mmの平板状にプレス成形
して成形体21を作製した。次に、図8に示すように、
縦60mm、横40mm、厚さ15mmのアルミナブロ
ックの上面を長手方向(縦方向)に湾曲(曲率半径60
mm)させるように研削して作製した上面が凹状のアル
ミナ基板22上に、成形体21と同一組成の原料を使用
して後述する成形体21の溶融結晶化工程と同様の工程
により予め作製しておいた縦39mm、横6mm、厚さ
2mm程度の複数のペレット片23を、上面が凹状のア
ルミナ基板22上に敷き詰め、その上に成形体21を載
置して、成形体21の底面の長手方向(縦方向)両側の
部分がペレット片23に支持されるようにし、2ゾーン
型の炉体内に設置して以下の工程を行った。The synthetic powder produced in this manner is put in a vertical direction 60
mm, the width 39 mm, and the thickness 25 mm were pressed into a flat plate to prepare a molded body 21. Next, as shown in FIG.
The upper surface of an alumina block having a length of 60 mm, a width of 40 mm, and a thickness of 15 mm is curved in the longitudinal direction (vertical direction) (curvature radius 60
mm) and is formed on an alumina substrate 22 having a concave upper surface by a raw material having the same composition as that of the molded body 21 in advance by a process similar to the melt crystallization process of the molded body 21 described later. A plurality of pellets 23 having a length of 39 mm, a width of 6 mm, and a thickness of about 2 mm are spread on an alumina substrate 22 having a concave upper surface, the molded body 21 is placed on the alumina substrate 22, and the bottom surface of the molded body 21 The pellets 23 were supported on both sides in the longitudinal direction (longitudinal direction), and the pellets 23 were installed in a 2-zone type furnace, and the following steps were performed.
【0033】まず、室温から70時間で1100℃まで
昇温させ、この温度で20分間保持して半溶融状態に
し、ペレット片23を介してアルミナ基板22の凹状の
表面に沿って成形体21の上面が凹状で下面が凸状にな
るように成形体21を湾曲させた。次に、成形体21の
上部が低温側になるように成形体21の上下に10℃/
cmの温度勾配を加えて、成形体21の上部の温度が9
95℃になるまで0.4℃/minで降温させた。次い
で、予め溶融法で作製しておいたPtを0.5wt%含
み且つAgを含まない縦横2mm、厚さ1mmのNd
1.8Ba2.4Cu3.4Ox組成の(図示しない)
種結晶を、成長方向がc軸と平行になるように成形体2
1の上面の中心に接触させ、995℃から1℃/hrの
速度で985℃まで降温させた。この温度で80時間保
持した後、915℃まで70時間かけて徐冷し、その
後、上下の温度勾配が0℃/cmになるように成形体2
1の下部を20時間で915℃になるように冷却し、そ
の後、室温まで100時間かけて徐冷して結晶化を行っ
た。First, the temperature is raised from room temperature to 1100 ° C. in 70 hours, maintained at this temperature for 20 minutes to be in a semi-molten state, and the pellet 21 is inserted along the concave surface of the alumina substrate 22 to form the compact 21. The molded body 21 was curved so that the upper surface was concave and the lower surface was convex. Next, the top and bottom of the molded body 21 are placed at 10 ° C. /
When a temperature gradient of cm is applied, the temperature of the upper part of the molded body 21 becomes 9
The temperature was lowered at 0.4 ° C / min until the temperature reached 95 ° C. Next, Nd of 0.5 mm in width and 2 mm in length and width, containing 0.5 wt% of Pt and having a thickness of 1 mm, which was prepared in advance by a melting method.
1.8 Ba 2.4 Cu 3.4 O x composition (not shown)
The seed crystal is formed into a compact 2 with the growth direction parallel to the c-axis.
1 was brought into contact with the center of the upper surface, and the temperature was lowered from 995 ° C. to 985 ° C. at a rate of 1 ° C./hr. After holding at this temperature for 80 hours, it is gradually cooled to 915 ° C. over 70 hours, and thereafter, the molded body 2 is adjusted so that the upper and lower temperature gradients become 0 ° C./cm.
The lower part of 1 was cooled to 915 ° C. in 20 hours, and then gradually cooled to room temperature over 100 hours for crystallization.
【0034】このようにして結晶化した材料をガス置換
可能な別の炉の中に設置し、以下のようにアニール処理
を行った。まず、ロータリーポンプで0.1Torrま
で炉内を排気した後、炉内に酸素ガスを流し込んで、酸
素分圧が99%以上である大気圧の雰囲気にした。その
後も0.5L/minの流量で酸素ガスを炉内に流しな
がら、室温から450℃まで10時間で昇温させ、45
0℃から250℃まで200時間かけて徐冷し、250
℃から室温まで10時間で降温させた。その後、同様の
アニール処理をもう一回行った。The material crystallized in this manner was placed in another furnace capable of gas replacement and annealed as follows. First, the inside of the furnace was evacuated to 0.1 Torr by a rotary pump, and then oxygen gas was flown into the furnace to create an atmospheric pressure atmosphere with an oxygen partial pressure of 99% or more. Thereafter, while flowing oxygen gas at a flow rate of 0.5 L / min in the furnace, the temperature was raised from room temperature to 450 ° C. in 10 hours, and 45
Gradually cool from 0 ℃ to 250 ℃ over 200 hours
The temperature was lowered from 0 ° C. to room temperature in 10 hours. Then, the same annealing treatment was performed once again.
【0035】このアニール処理の後、上面が凹状で下面
が凸状になるように湾曲した成形体21は、焼き縮みの
ため、縦50mm、横33mm、厚さ20mmになり、
上面の曲率半径は約60mm、下面の曲率半径は約80
mmであった。この成形体21を上下方向の中心付近で
切断して断面をEPMAで観察したところ、Gd1+ p
Ba2+q(Cu1−bAgb)3O7−x相中に0.
1〜30μm程度のGd2+rBa1+s(Cu1−d
Agd)O5−y相が微細に分散していた。ここで、
p、q、r、s、yはそれぞれ−0.2〜0.2の値で
あり、xは−0.2〜0.6の値であった。また、b、
dは0.0〜0.05の値であり、平均的には0.00
8程度であった。さらに、試料全体にわたって0.1〜
100μm程度のAgが微細に分散していた。また、粒
径5〜200μm程度の空孔が分散して存在していた。
また、材料全体が種結晶を反映して中心の厚さ方向がc
軸と平行になるように均一に配向し、隣接する結晶間の
方位のずれが3°以下であり、実質的に単結晶状の超電
導材料が得られた。After this annealing treatment, the molded body 21 curved so that the upper surface is concave and the lower surface is convex has a length of 50 mm, a width of 33 mm and a thickness of 20 mm due to shrinkage.
The radius of curvature of the upper surface is about 60 mm, and the radius of curvature of the lower surface is about 80 mm.
It was mm. When this molded body 21 was cut near the center in the vertical direction and the cross section was observed by EPMA, it was found that Gd 1+ p
Ba 2 + q (Cu 1- b Ag b) 3 O 7-x 0 in phase.
Gd 2 + r Ba 1 + s (Cu 1-d of about 1 to 30 μm )
The Ag d ) O 5-y phase was finely dispersed. here,
p, q, r, s, and y each had a value of -0.2 to 0.2, and x had a value of -0.2 to 0.6. Also, b,
d is a value of 0.0 to 0.05, and is 0.00 on average.
It was about 8. Furthermore, 0.1 to 0.1
Ag of about 100 μm was finely dispersed. In addition, pores having a particle size of about 5 to 200 μm were dispersed and existed.
In addition, the whole material reflects the seed crystal, and the thickness direction of the center is c
A superconducting material which is uniformly oriented so as to be parallel to the axis, has an orientation deviation of 3 ° or less between adjacent crystals, and is substantially a single crystal is obtained.
【0036】次に、中心の厚さ方向に平行に外部磁場2
Tを加えながら室温から温度77Kまで冷却した後、磁
場を取り去って超電導体中に捕捉される磁束密度を測定
した。この測定は、ホール素子をXYステージに取り付
けて超電導体表面から約1mmの距離で超電導体の凹状
の表面に沿って移動させ、中心の厚さ方向に対して垂直
な成分の磁束密度分布を測定することによって行った。
その結果、均一な磁場分布を示し、最大捕捉磁場は1.
2Tであり、高い捕捉磁束密度特性を示した。Next, the external magnetic field 2 is provided parallel to the thickness direction of the center.
After cooling from room temperature to 77K while adding T, the magnetic field was removed and the magnetic flux density trapped in the superconductor was measured. In this measurement, the Hall element was attached to the XY stage and moved along the concave surface of the superconductor at a distance of about 1 mm from the surface of the superconductor, and the magnetic flux density distribution of the component perpendicular to the thickness direction of the center was measured. I went by.
As a result, it shows a uniform magnetic field distribution, and the maximum trapping magnetic field is 1.
It was 2T and showed a high trapping magnetic flux density characteristic.
【0037】次に、この材料の中心付近から2.5×
2.5×2mmの試料を切り出して、振動試料型磁力計
により磁化率を測定した。得られた磁化率曲線よりBe
anモデルを適用して、温度77Kにおける臨界電流密
度Jcを見積もったところ、図9に示すように高い臨界
電流密度を示した。Next, 2.5 × from near the center of this material
A 2.5 × 2 mm sample was cut out and the magnetic susceptibility was measured by a vibrating sample magnetometer. Be from the obtained magnetic susceptibility curve
When an an model was applied to estimate the critical current density Jc at a temperature of 77K, a high critical current density was shown as shown in FIG.
【0038】[実施例3]実施例1と同様にして作製し
た合成粉を縦60mm、横39mm、厚さ25mmの平
板状にプレス成形して成形体31を作製した。次に、図
10に示すように、アルミナ基板32上に、成形体11
と同一組成の原料を使用して実施例1と同様の溶融結晶
化工程により予め作製しておいた縦39mm、横13m
m、厚さ2mm程度の複数のペレット片33を、所定の
高さに積み上げるとともに、この積み上げたペレット片
33の両側に所定の間隔だけ離間して略平行に且つ中央
に積み上げたペレット片33よりも低くなるように敷い
た。次いで、中央に積み上げられたペレット片33の上
に成形体31を載置して、実施例1と同様に溶融結晶化
およびアニール処理を行った。[Example 3] The synthetic powder produced in the same manner as in Example 1 was press-molded into a flat plate having a length of 60 mm, a width of 39 mm and a thickness of 25 mm to form a molded body 31. Next, as shown in FIG. 10, the molded body 11 is formed on the alumina substrate 32.
39 mm in length and 13 m in width prepared in advance by the same melt crystallization process as in Example 1 using a raw material having the same composition as
A plurality of pellet pieces 33 having a thickness of 2 mm and a thickness of about 2 mm are stacked at a predetermined height, and the pellet pieces 33 are stacked on both sides of the stacked pellet pieces 33 at a predetermined interval in a substantially parallel manner and in the center. It was laid so that it would be low. Next, the molded body 31 was placed on the pellet pieces 33 stacked in the center, and the melt crystallization and the annealing treatment were performed in the same manner as in Example 1.
【0039】このアニール処理の後、図11に示すよう
に上面が凸状で下面が凹状になるように湾曲した成形体
31は、焼き縮みのため、縦50mm、横33mm、厚
さ20mmになり、上面の曲率半径は約80mm、下面
の曲率半径は約60mmであった。この成形体31を上
下方向の中心付近で切断して断面をEPMAで観察した
ところ、実施例1とほぼ同様の組織であった。また、材
料全体が種結晶を反映して中心の厚さ方向がc軸と平行
になるように均一に配向し、隣接する結晶間の方位のず
れが3°以下であり、実質的に単結晶状の超電導材料が
得られた。After this annealing treatment, as shown in FIG. 11, the molded body 31 having a convex upper surface and a concave lower surface has a length of 50 mm, a width of 33 mm, and a thickness of 20 mm due to shrinkage. The radius of curvature of the upper surface was about 80 mm, and the radius of curvature of the lower surface was about 60 mm. When this molded body 31 was cut near the center in the vertical direction and the cross section was observed by EPMA, the structure was almost the same as in Example 1. In addition, the entire material is uniformly oriented so that the central thickness direction is parallel to the c-axis, reflecting the seed crystal, and the misalignment between the adjacent crystals is 3 ° or less, and the single crystal is substantially a single crystal. A superconducting material having a shape of a line was obtained.
【0040】次に、中心の厚さ方向に平行に外部磁場2
Tを加えながら室温から温度77Kまで冷却した後、磁
場を取り去って超電導体中に捕捉される磁束密度を測定
した。この測定は、ホール素子をXYステージに取り付
けて超電導体表面から約1mmの距離で超電導体の凸状
の表面に沿って移動させ、中心の厚さ方向に対して垂直
な成分の磁束密度分布を測定することによって行った。
その結果、均一な磁場分布を示し、最大捕捉磁場は1.
2Tであり、高い捕捉磁束密度特性を示した。Next, the external magnetic field 2 is made parallel to the thickness direction of the center.
After cooling from room temperature to 77K while adding T, the magnetic field was removed and the magnetic flux density trapped in the superconductor was measured. In this measurement, the Hall element was attached to the XY stage and moved along the convex surface of the superconductor at a distance of about 1 mm from the surface of the superconductor, and the magnetic flux density distribution of the component perpendicular to the thickness direction of the center was measured. It was done by measuring.
As a result, it shows a uniform magnetic field distribution, and the maximum trapping magnetic field is 1.
It was 2T and showed a high trapping magnetic flux density characteristic.
【0041】次に、この材料の中心付近から2.5×
2.5×2mmの試料を切り出して、SQUID磁束計
により磁化率を測定した。得られた磁化率曲線よりBe
anモデルを適用して、温度77Kにおける臨界電流密
度Jcを見積もったところ、実施例1と同程度に高い臨
界電流密度を示した。Next, 2.5 × from near the center of this material
A 2.5 × 2 mm sample was cut out and the magnetic susceptibility was measured by an SQUID magnetometer. Be from the obtained magnetic susceptibility curve
When the an model was applied to estimate the critical current density Jc at a temperature of 77 K, the critical current density was as high as in Example 1.
【0042】[比較例]実施例1と同様の方法により作
製された合成粉を縦60mm、横39mm、厚さ33m
mの平板状にプレス成形して成形体を作製した。次に、
アルミナ基板上に、この成形体と同一組成の原料を使用
して実施例1と同様の溶融結晶化工程により予め作製し
ておいた縦39mm、横13mm、厚さ2mm程度の複
数のペレット片を平らに敷き詰めて、その上に成形体を
載置し、2ゾーン型の炉体内に設置して以下の工程を行
った。[Comparative Example] A synthetic powder produced by the same method as in Example 1 was used to measure length 60 mm, width 39 mm, and thickness 33 m.
m was pressed into a flat plate to prepare a molded body. next,
Plural pieces of pellets having a length of 39 mm, a width of 13 mm, and a thickness of about 2 mm, which were prepared in advance by the same melt crystallization process as in Example 1 using the raw material having the same composition as that of the molded body, were placed on an alumina substrate. It was spread evenly, the molded body was placed on it, and it was placed in a two-zone type furnace body, and the following steps were performed.
【0043】まず、室温から70時間で1100℃まで
昇温させ、この温度で20分間保持してSm2+rBa
1+s(Cu1−dAgd)O5−y相と液相が存在す
る半溶融状態にた。その後、成形体の上部が低温側にな
るように成形体の上下に10℃/cmの温度勾配を加え
て、成形体の上部の温度が1025℃になるまで0.4
℃/minで降温させた。次いで、予め溶融法で作製し
ておいたPtを0.5wt%含み且つAgを含まない縦
横2mm、厚さ1mmのNd1.8Ba2.4Cu
3.4Ox組成の種結晶を、成長方向がc軸と平行にな
るように成形体の上面の中心に接触させ、1025℃か
ら1℃/hrの速度で1015℃まで降温させた。この
温度で60時間保持した後、945℃まで70時間かけ
て徐冷し、その後、上下の温度勾配が0℃/cmになる
ように成形体の下部を20時間で945℃になるように
冷却し、その後、室温まで100時間かけて徐冷して結
晶化を行った。First, the temperature was raised from room temperature to 1100 ° C. in 70 hours and kept at this temperature for 20 minutes to obtain Sm 2 + r Ba.
1 + s (Cu 1-d Ag d ) O 5-y phase and liquid phase were in a semi-molten state. Then, a temperature gradient of 10 ° C./cm is applied to the top and bottom of the compact so that the upper part of the compact is on the low temperature side, and the temperature of the upper part of the compact is 0.45 until the temperature of the upper part reaches 1025 ° C.
The temperature was lowered at ° C / min. Next, Nd 1.8 Ba 2.4 Cu having a width of 2 mm and a thickness of 1 mm containing 0.5 wt% Pt and not containing Ag, which has been prepared in advance by a melting method.
A seed crystal having a composition of 3.4 O x was brought into contact with the center of the upper surface of the compact so that the growth direction was parallel to the c-axis, and the temperature was lowered from 1025 ° C. to 1015 ° C. at a rate of 1 ° C./hr. After holding at this temperature for 60 hours, it is slowly cooled to 945 ° C over 70 hours, and then the lower part of the molded body is cooled to 945 ° C in 20 hours so that the upper and lower temperature gradients become 0 ° C / cm. Then, crystallization was performed by gradually cooling to room temperature over 100 hours.
【0044】このようにして結晶化した材料をガス置換
可能な別の炉の中に設置し、以下のようにアニール処理
を行った。まず、ロータリーポンプで0.1Torrま
で炉内を排気した後、炉内に酸素ガスを流し込んで、酸
素分圧が99%以上である大気圧の雰囲気にした。その
後も0.5L/minの流量で酸素ガスを炉内に流しな
がら、室温から450℃まで10時間で昇温させ、45
0℃から250℃まで200時間かけて徐冷し、250
℃から室温まで10時間で降温させた。その後、同様の
アニール処理をもう一回行った。The material crystallized in this way was placed in another furnace capable of gas replacement and annealed as follows. First, the inside of the furnace was evacuated to 0.1 Torr by a rotary pump, and then oxygen gas was flown into the furnace to create an atmospheric pressure atmosphere with an oxygen partial pressure of 99% or more. Thereafter, while flowing oxygen gas at a flow rate of 0.5 L / min in the furnace, the temperature was raised from room temperature to 450 ° C. in 10 hours, and 45
Gradually cool from 0 ℃ to 250 ℃ over 200 hours
The temperature was lowered from 0 ° C. to room temperature in 10 hours. Then, the same annealing treatment was performed once again.
【0045】このアニール処理の後、成形体は焼き縮み
のため、縦50mm、横33mm、厚さ26mmになっ
ていた。After this annealing treatment, the compact had a length of 50 mm, a width of 33 mm and a thickness of 26 mm due to shrinkage.
【0046】この成形体を上下方向の中心付近で切断し
て断面をEPMAで観察したところ、実施例1とほぼ同
様の組織であった。また、材料全体が種結晶を反映して
厚さ方向がc軸と平行になるように均一に配向し、隣接
する結晶間の方位のずれが3°以下であり、実質的に単
結晶状の超電導材料が得られた。When this molded body was cut near the center in the vertical direction and the cross section was observed by EPMA, the structure was almost the same as in Example 1. In addition, the entire material is uniformly oriented so that the thickness direction is parallel to the c-axis, reflecting the seed crystal, and the misalignment between adjacent crystals is 3 ° or less. A superconducting material was obtained.
【0047】次に、この平板上の材料を研削加工により
縦50mm、横33mm、厚さ20mm、上面の曲率半
径を60mm、下面の曲率半径を80mmになるように
加工して、実施例1と同様に超電導体中に捕捉される磁
束密度を測定した。その結果、研削加工による劣化のた
め、最大捕捉磁場が0.5Tと低くなっていた。Next, the material on the flat plate was ground to a length of 50 mm, a width of 33 mm, a thickness of 20 mm, a radius of curvature of the upper surface of 60 mm, and a radius of curvature of the lower surface of 80 mm. Similarly, the magnetic flux density trapped in the superconductor was measured. As a result, the maximum trapping magnetic field was as low as 0.5 T due to deterioration due to grinding.
【0048】[0048]
【発明の効果】以上詳述したように、本発明によれば、
所定の形状に段差を設けて配置された介在物を介して基
板上に成形体を載置し、あるいは介在物を介して所定の
形状に湾曲した基板上に成形体を載置し、成形体を溶融
結晶化させることにより、研削加工などによる歩留まり
の低下や劣化を生じることなく、電気特性、磁気特性、
機械強度に優れた湾曲した酸化物超電導体を低コストで
製造することができる。As described in detail above, according to the present invention,
A molded body is placed on a substrate through an inclusion that is arranged with a step in a predetermined shape, or a molded body is placed on a substrate that is curved into a predetermined shape through an inclusion, By melting and crystallizing, the electric characteristics, magnetic characteristics, and
A curved oxide superconductor having excellent mechanical strength can be manufactured at low cost.
【図1】REとして各希土類金属元素を使用した場合の
RE1+pBa2+q(Cu1 −bAgb)3O7−x
相の融点(結晶化温度)Tmを示す図。[1] RE 1 + p Ba 2 + q in the case of using the rare earth element as a RE (Cu 1 -b Ag b) 3 O 7-x
The figure which shows melting | fusing point (crystallization temperature) Tm of a phase.
【図2】Agの添加量とRE1+pBa2+q(Cu
1−bAgb)3O7−x相の融点(結晶化温度)Tm
の補正値との関係を示す図。FIG. 2 shows the amount of Ag added and RE 1 + p Ba 2 + q (Cu
1-b Ag b ) 3 O 7-x phase melting point (crystallization temperature) Tm
FIG. 6 is a diagram showing a relationship with the correction value of.
【図3】実施例1で製造した成形体の組成を示す図。FIG. 3 is a view showing the composition of the molded body produced in Example 1.
【図4】実施例1の成形体を載置する手法を示す斜視
図。FIG. 4 is a perspective view showing a method of placing the molded body of Example 1.
【図5】実施例1の結晶化後の成形体を示す斜視図。FIG. 5 is a perspective view showing a molded body of Example 1 after crystallization.
【図6】実施例1で製造した酸化物超電導体の捕捉磁束
密度分布特性を示す図。FIG. 6 is a diagram showing trapped magnetic flux density distribution characteristics of the oxide superconductor manufactured in Example 1.
【図7】実施例1で製造した酸化物超電導体の臨界電流
密度の磁場依存性を示す図。FIG. 7 is a diagram showing the magnetic field dependence of the critical current density of the oxide superconductor manufactured in Example 1.
【図8】実施例2の成形体を載置する手法を示す斜視
図。FIG. 8 is a perspective view showing a method of placing the molded body of the second embodiment.
【図9】実施例2で製造した酸化物超電導体の臨界電流
密度の磁場依存性を示す図。9 is a diagram showing the magnetic field dependence of the critical current density of the oxide superconductor produced in Example 2. FIG.
【図10】実施例3の成形体を載置する手法を示す斜視
図。FIG. 10 is a perspective view showing a method of mounting the molded body of Example 3.
【図11】実施例3の結晶化後の成形体を示す斜視図。FIG. 11 is a perspective view showing a molded body of Example 3 after crystallization.
11、21、31 成形体 12、22、32 アルミナ基板 13、23、33 ペレット片 14、34 種結晶 15、35 結晶のab面に沿った面を示す線 11, 21, 31 molded products 12, 22, 32 Alumina substrate 13, 23, 33 pellet pieces 14,34 seed crystals Lines indicating the planes along the ab plane of crystals
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 39/24 H01L 39/24 B (72)発明者 長屋 重夫 愛知県名古屋市緑区大高町字北関山20番地 の1 中部電力株式会社電力技術研究所内 Fターム(参考) 4G047 JA03 JA04 JB03 JB06 JC02 KC01 KC06 KD10 LA01 LB01 LB04 4G077 AA02 BC53 CC03 EC05 4M113 AD36 BA21 BA29 CA34 5G321 AA01 BA02 BA03 BA05 BA11 DB28 DB99 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 39/24 H01L 39/24 B (72) Inventor Shigeo Nagaya Kita Otakamachi, Midori-ku, Nagoya-shi, Aichi Sekiyama 20 No. 1 Chubu Electric Power Co., Inc. Electric Power Technology Research Institute F-term (reference) 4G047 JA03 JA04 JB03 JB06 JC02 KC01 KC06 KD10 LA01 LB01 LB04 4G077 AA02 BC53 CC03 EC05 4M113 AD36 BA21 BA29 CA34 5G321 AA01 BA02 BA03 BA05 BA11 DB11 BA05 BA11 DB28
Claims (13)
b)3O7−x(REは1種または2種以上の希土類金
属元素、−0.2≦p≦0.2、−0.2≦q≦0.
2、0≦b≦0.05、−0.2≦x≦0.6)相中
に、RE2+rBa1+s(Cu1−dAgd)O
5−y相およびRE4+rBa2+s( Cu1−dA
gd )2O10−y相(−0.2≦r≦0.2、−
0.2≦s≦0.2、0≦d≦0.05、−0.2≦y
≦0.2)の少なくとも一方の相が微細に分散した酸化
物超電導体において、この酸化物超電導体の表面の少な
くとも一部が80mm以下の曲率半径になるように湾曲
し、且つ1T以上の捕捉磁場特性を有することを特徴と
する酸化物超電導体。1. RE 1 + p Ba 2 + q (Cu 1-b Ag
b ) 3 O 7-x (RE is one or more rare earth metal elements, -0.2≤p≤0.2, -0.2≤q≤0.
2, 0 ≦ b ≦ 0.05, −0.2 ≦ x ≦ 0.6) phase, RE 2 + r Ba 1 + s (Cu 1-d Ag d ) O.
5-y phase and RE 4 + r Ba 2 + s (Cu 1-d A
g d ) 2 O 10-y phase (−0.2 ≦ r ≦ 0.2, −
0.2 ≦ s ≦ 0.2, 0 ≦ d ≦ 0.05, −0.2 ≦ y
≤0.2) in an oxide superconductor in which at least one phase is finely dispersed, at least a part of the surface of the oxide superconductor is curved to have a radius of curvature of 80 mm or less, and capture of 1 T or more. An oxide superconductor characterized by having magnetic field characteristics.
0wt%のAgを含むことを特徴とする、請求項1に記
載の酸化物超電導体。2. The oxide superconductor is 8 wt% to 6%.
The oxide superconductor according to claim 1, wherein the oxide superconductor contains 0 wt% Ag.
u、Rh、Ir、Os、Re、Ceの金属およびこれら
の金属の化合物から選ばれる1種以上を0.05wt%
乃至5wt%(化合物の場合はその金属のみの元素重量
で示す)含むことを特徴とする、請求項1または2に記
載の酸化物超電導体。3. The oxide superconductor is Pt, Pd, R.
0.05 wt% of one or more selected from metals of u, Rh, Ir, Os, Re, Ce and compounds of these metals.
3 to 5 wt% (in the case of a compound, it is indicated by the element weight of only the metal), the oxide superconductor according to claim 1 or 2.
選ばれる1種または2種以上の元素を少なくとも50%
以上含むことを特徴とする、請求項1乃至3のいずれか
に記載の酸化物超電導体。4. The RE contains at least 50% of one or more elements selected from Nd, Sm, Gd and Dy.
The oxide superconductor according to any one of claims 1 to 3, comprising the above.
2種以上の希土類金属元素)とBa化合物とCu化合物
とを含む原料混合体を、この原料混合体の融点より高い
温度で加熱溶融した後に、徐冷して結晶を成長させるこ
とによりRE−Ba−Cu−O系の酸化物超電導体を製
造する方法において、前記原料混合体を板状に成形して
成形体を作製し、上面の高さが不均一になるように基板
上に配置された介在物を介して、前記成形体を前記基板
上に載置し、前記成形体を加熱溶融して湾曲させた後
に、徐冷して結晶成長させることを特徴とする酸化物超
電導体の製造方法。5. A raw material mixture containing a RE compound (RE is one or more rare earth metal elements containing Y), a Ba compound and a Cu compound is heated and melted at a temperature higher than the melting point of the raw material mixture. Then, in the method for producing an RE-Ba-Cu-O-based oxide superconductor by slowly cooling and growing a crystal, in the method, the raw material mixture is formed into a plate to form a formed body, and the upper surface is formed. The molded body is placed on the substrate through inclusions arranged on the substrate so that the height of the molded body becomes uneven, and the molded body is heated and melted to be curved, and then gradually cooled. A method for producing an oxide superconductor, which comprises crystallizing the crystal by means of crystal growth.
徴とする、請求項5に記載の酸化物超電導体の製造方
法。6. The method for producing an oxide superconductor according to claim 5, wherein the substrate is a flat substrate.
あることを特徴とする、請求項5に記載の酸化物超電導
体の製造方法。7. The method for producing an oxide superconductor according to claim 5, wherein the substrate has a curved upper surface.
Cu化合物のうちの1種以上の化合物を含むことを特徴
とする、請求項5乃至7に記載の酸化物超電導体の製造
方法。8. The method for producing an oxide superconductor according to claim 5, wherein the inclusion contains at least one compound selected from a RE compound, a Ba compound and a Cu compound.
する、請求項8に記載の酸化物超電導体の製造方法。9. The method for producing an oxide superconductor according to claim 8, wherein the inclusion is a floor plate.
とCu化合物のうちの1種以上の化合物を含む粉末であ
ることを特徴とする、請求項7に記載の酸化物超電導体
の製造方法。10. The method for producing an oxide superconductor according to claim 7, wherein the inclusion is a powder containing one or more compounds of a RE compound, a Ba compound and a Cu compound.
後に、前記成形体に種結晶を設置して、その後、徐冷し
て結晶成長させることを特徴とする、請求項5乃至10
のいずれかに記載の酸化物超電導体の製造方法。11. The method according to claim 5, wherein after the molded body is heated and melted to be curved, a seed crystal is placed on the molded body, and then gradually cooled to grow a crystal.
A method for producing an oxide superconductor according to any one of 1.
後に、前記成形体の上部が低温側になるように前記成形
体の上下に1乃至30℃/cmの温度勾配を加えた後、
種結晶を設置して、その後、前記成形体を徐冷して結晶
成長させることを特徴とする、請求項5乃至10のいず
れかに記載の酸化物超電導体の製造方法。12. After heat-melting and bending the molded body, a temperature gradient of 1 to 30 ° C./cm is applied to the upper and lower sides of the molded body so that the upper portion of the molded body is on the low temperature side,
The method for producing an oxide superconductor according to any one of claims 5 to 10, wherein a seed crystal is provided, and then the molded body is gradually cooled to grow a crystal.
記成形体がRE2 +rBa1+s(Cu1−dAgd)
O5−y相およびRE4+rBa2+s(Cu1−dA
gd )2O10−y相(−0.2≦r≦0.2、−
0.2≦s≦0.2、0≦d≦0.05、−0.2≦y
≦0.2)の少なくとも一方の相と液相になる温度であ
ることを特徴とする、請求項5乃至12のいずれかに記
載の酸化物超電導体の製造方法。13. The temperature for heating and melting the molded body is such that the molded body is RE 2 + r Ba 1 + s (Cu 1-d Ag d ).
O 5-y phase and RE 4 + r Ba 2 + s (Cu 1-d A
g d ) 2 O 10-y phase (−0.2 ≦ r ≦ 0.2, −
0.2 ≦ s ≦ 0.2, 0 ≦ d ≦ 0.05, −0.2 ≦ y
≦ 0.2), which is a temperature at which at least one of the phases becomes a liquid phase, and the method for producing an oxide superconductor according to any one of claims 5 to 12, wherein.
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