JP2003092378A - Tape with adhesive for semiconductor device, copper-clad laminate using the same, substrate for semiconductor connection, and semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a tape with an adhesive for a semiconductor which is excellent in wire bondability and can reduce warpage, a copper-clad laminate using the tape, and a semiconductor device. The insulating film layer has a thickness of 10 to 65 μm and a humidity expansion coefficient of 8 ppm /.
% RH or less, and the adhesive layer is cured at 150 ° C.
Wherein the storage elastic modulus is 50 MPa or more.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor connecting substrate such as a tape automated bonding (TAB) type pattern processing tape and a ball grid array (BGA) package interposer used for mounting a semiconductor integrated circuit. , Die bonding material, lead frame fixing tape, LOC tape, interlayer adhesive sheet for multi-layer substrate, etc. Adhesive tape suitable for producing semiconductor devices using film-shaped adhesive and copper-clad using the same The present invention relates to a laminated plate, a semiconductor connection substrate, and a semiconductor device.

[0002]

2. Description of the Related Art A method using a metal lead frame is most widely used for mounting a semiconductor integrated circuit (IC). In recent years, IC connection is made on an organic insulating film such as glass epoxy or polyimide. There is an increasing number of methods of forming a conductor pattern for use with a connecting substrate. A typical example is a tape carrier package (T) that uses the tape automated bonding (TAB) method.
CP).

Generally, a tape with an adhesive for TAB (hereinafter referred to as TAB tape) is used as a connection substrate (pattern tape) for TCP. An ordinary TAB tape has a three-layer structure in which an uncured adhesive layer and a polyester film having releasability as a protective film layer are laminated on a flexible organic insulating film such as a polyimide film. It is configured.

The TAB tape includes (1) sprocket and device hole punching, (2) thermal lamination with copper foil and heat curing of an adhesive, (3) pattern formation (resist coating, etching, resist removal), ( 4) It is processed into a TAB tape (pattern tape) which is a connection substrate through a processing step such as tin or gold-plating processing. Figure 1
Shows the shape of the pattern tape. FIG. 2 shows the TCP of the present invention.
A cross-sectional view of one embodiment of the semiconductor device is shown. The inner lead portion 6 of the pattern tape is thermocompression bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 to mount the semiconductor integrated circuit. Next, a semiconductor device is created through a resin sealing process using the sealing resin 9. Finally, TC
The P-type semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7 and mounted on an electronic device.

On the other hand, as electronic devices have become smaller and lighter in recent years, a semiconductor package has a BGA (ball grid array) and CSP (chip scale package) in which connection terminals are arranged on the back surface of the package for the purpose of high-density mounting. Has come to be used.

Similar to TCP, BGA and CSP require a connection substrate called an interposer. However, in the conventional IC connection method, most of the conventional TCP uses TAB method gang bonding, while B
For GA and CSP, either TAB method or wire bonding method can be used for each package specification, application,
The selection differs depending on the design policy. Figure 3
And FIG. 4 shows a cross-sectional view of one embodiment of the semiconductor device (BGA, CSP) of the present invention.

The interposer referred to here is the above-mentioned T
Since the tape has the same function as the pattern tape of CP, the tape with adhesive for TAB can be used. Of course, it is advantageous for the connection method having the inner leads, but it is particularly suitable for the process of laminating the copper foil after mechanically punching out the holes for the solder balls and the device holes for the IC. On the other hand, since the connection is made by wire bonding, the inner lead is not necessary, or in the process of opening the holes for the solder balls and the device holes for the IC together with the copper foil, the copper foil has already been laminated and the adhesive has been heat-cured. A copper clad laminate may be used.

In the above package form, the thickness of the insulating film such as polyimide is generally 75 μm or more in order to provide mechanical strength, but recently it tends to be thin. This is because the diameter of the solder ball hole and the diameter of the via hole are miniaturized, which hinders processes such as punching and plating. For example, from the balance with mechanical strength, 50
μm is considered realistic. However, a film thinner than 75 μm has a problem that its rigidity is lowered and a warp is likely to occur when it is bonded to a copper foil.

As a means for solving this, in the conventional tape with an adhesive, a method of introducing a siloxane structure into the adhesive to make it flexible so as to avoid warpage has been studied (Japanese Patent Laid-Open No. 11-1999). -345843).

[0010]

However, in the above-mentioned warp characteristics, the conventional tape with an adhesive for semiconductors is not always sufficient. For example, the method of reducing the warpage by the flexibility of the adhesive cannot obtain sufficient wire bondability. In order to meet such demands, it has been impossible for the conventional technology to simultaneously satisfy low warpage and wire bondability.

The present invention solves the above problems, reduces warpage, and can simultaneously achieve excellent wire-bonding properties. A tape with an adhesive for semiconductors, a copper clad laminate using the same, and a semiconductor connection. An object is to provide a substrate and a semiconductor device.

[0012]

That is, the present invention comprises a laminate of an organic insulating film layer and at least one or more adhesive layers, and the insulating film layer has a thickness of 10 to 10.
The adhesive tape for semiconductors is characterized in that it has a humidity expansion coefficient of 65 μm and a humidity expansion coefficient of 8 ppm /% RH or less, and the adhesive layer has a storage elastic modulus at 150 ° C. of 50 MPa or more after curing.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION In order to achieve the above-mentioned object, the inventors of the present invention have diligently studied the relationship between the physical properties of an insulating film of an adhesive tape for semiconductors and the physical properties of an adhesive component.
By optimizing these physical properties, it was found that an adhesive tape for a semiconductor device in which the warp of the state with a copper foil and the state after formation of a circuit pattern were both improved was obtained, and the present invention was achieved. is there.

The organic insulating film layer used in the adhesive tape for a semiconductor device of the present invention has a film thickness of 10 to 6
It is essential that it has characteristics of 5 μm and a coefficient of humidity expansion of 8 ppm /% RH or less, but is not limited thereto.

For example, films made of polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, plastic such as liquid crystal polymer or composite material such as epoxy resin impregnated glass cloth are exemplified. A plurality of films selected from these may be laminated and used. Among them, a film containing a polyimide resin as a main component is preferable because it has various properties such as mechanical properties, electricity properties, heat resistance, and chemistry, and is well balanced in terms of cost. If necessary, the insulating film may be subjected to surface treatment such as hydrolysis, corona discharge, low temperature plasma, physical surface roughening, and easy adhesion coating treatment on one side or both sides.

The thickness of the organic insulating film layer of the present invention is preferably 10 to 65 μm, more preferably 20 to 55 μm.
m. If the thickness is less than 10 μm, the mechanical strength is low and the workability is lowered in the steps after pattern processing, which is not preferable. If it is thicker than 65 μm, it is difficult to make the solder balls and via holes finer, which is not preferable.

The humidity expansion coefficient is preferably 8 ppm /%
RH or less, more preferably 7 ppm /% RH or less. If it is higher than 8 ppm /% RH, the warp is large, which is not preferable. The humidity expansion coefficient referred to here is a value obtained by allowing a sufficiently dried film to expand by absorbing moisture under a humidity condition of 60% RH and measuring the expansion coefficient.

The adhesive layer is usually provided in a semi-cured state, and can be cured and crosslinked by applying at least one kind of energy selected from heating, pressure, electric field, magnetic field, ultraviolet ray, radiation, ultrasonic wave, etc. after copper foil lamination. The chemical structure is not particularly limited. In particular, it is preferable to contain at least one thermosetting resin selected from epoxy resin, phenol resin, and polyimide resin. The addition amount of the thermosetting resin is preferably 10 to 60% by weight, and more preferably 20 to 70% by weight of the adhesive layer.

The epoxy resin is not particularly limited as long as it has two or more epoxy groups in one molecule, but bisphenol F, bisphenol A, bisphenol S,
Diglycidyl ethers such as dihydroxynaphthalene, dicyclopentadiene diphenol, dicyclopentadiene dixylenol, epoxidized phenol novolac,
Examples thereof include epoxidized cresol novolac, epoxidized trisphenylol methane, epoxidized tetraphenylol ethane, epoxidized metaxylene diamine, and alicyclic epoxy.

As the phenol resin, any known phenol resin such as novolac type phenol resin and resol type phenol resin can be used. For example, alkyl-substituted phenols such as phenol, cresol, pt-butylphenol, nonylphenol and p-phenylphenol, cyclic alkyl-modified phenols such as terpenes and dicyclopentadiene, hetero groups such as nitro groups, halogen groups, cyano groups and amino groups. Those having a functional group containing atoms, those having a skeleton such as naphthalene, anthracene,
Examples of the resin include polyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S, resorcinol, and pyrogallol.

Examples of the polyimide resin include aromatic tetracarboxylic acids such as pyromellitic acid, 3,3 ', 4,4'-biphenyltetracarboxylic acid and 3,3', 4,4'-benzophenonetetracarboxylic acid. Anhydrous, 4,
Examples include imidized polyamic acids obtained by condensation polymerization of diamines such as 4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl sulfone, paraphenylenediamine, dimethylbenzidine, and 3,3′-diaminobenzophenone. To be

The maleimide resin is preferably a bifunctional or higher functional one, for example, N, N '-(4,4'diphenylmethane) bismaleimide, N, N'-p-phenylenebismaleimide, N, N'-m. -Phenylene bismaleimide, N, N'-2,4-tolylene bismaleimide,
N, N'-2,6-tolylene bismaleimide, N, N '
-Ethylene bismaleimide, N, N'-hexamethylene bismaleimide and the like are exemplified.

The addition of a thermosetting resin curing agent and a curing accelerator to the adhesive layer of the present invention is not limited. For example, an aromatic polyamine, an amine complex of boron trifluoride such as boron trifluoride triethylamine complex, an imidazole derivative such as 2-alkyl-4-methylimidazole, 2-phenyl-4-alkylimidazole, phthalic anhydride, and trianhydride. Known organic acids such as organic acid such as meritic acid, dicyandiamide, triphenylphosphine, diazabicycloundecene can be used. Adhesive layer 10
It is preferably 0.1 to 10 parts by weight with respect to 0 parts by weight.

In addition to the above components, addition of organic or inorganic components such as antioxidants and ion scavengers is not limited to the extent that the characteristics of the adhesive are not impaired.

The adhesive layer of the present invention may contain a thermoplastic resin. The thermoplastic resin is effective in controlling the softening temperature, and has functions such as adhesion, flexibility, relaxation of thermal stress, and improvement of insulating property due to low water absorption. The amount of the thermoplastic resin added is preferably 20 to 6 in the adhesive layer.
It is 0% by weight, more preferably 30 to 50% by weight.

As the thermoplastic resin, acrylonitrile-butadiene copolymer (NBR), acrylonitrile-
Butadiene rubber-styrene resin (ABS), styrene-
Known materials such as butadiene-ethylene resin (SEBS), acrylic, polyvinyl butyral, polyamide, polyester amide, polyester, polyimide, polyamide imide and polyurethane are exemplified. Further, these thermoplastic resins may have a functional group capable of reacting with the above-mentioned thermosetting resin such as phenol resin and epoxy resin. Specifically, it is an amino group, a carboxyl group, an epoxy group, a hydroxyl group, a methylol group, an isocyanate group, a vinyl group, a silanol group or the like. These functional groups are preferable because they strengthen the bond with the thermosetting resin and improve the heat resistance. Among them, polyamide resins are preferable from the viewpoint of adhesiveness with copper foil, flexibility, and insulating properties, and various types can be used. In particular, a polyamide resin containing a dicarboxylic acid having a carbon number of 36 (so-called dimer acid) as an essential component, which has flexibility in the adhesive layer and has excellent insulating property due to low water absorption, is suitable. Further, a polyamide resin which is a polyamide resin and has an amine value of 1 or more and less than 3 is preferably used. Polyamide resin containing dimer acid,
It can be obtained by polycondensation of dimer acid and diamine by a conventional method. At this time, a dicarboxylic acid other than dimer acid, such as adipic acid, azelaic acid or sebacic acid, may be contained as a copolymerization component. As the diamine, known ones such as ethylenediamine, hexamethylenediamine and piperazine can be used, and two or more kinds thereof may be mixed in view of hygroscopicity and solubility.

The thickness of the adhesive before curing is preferably in the range of 3 to 50 μm.

The storage elastic modulus at 150 ° C. of the cured adhesive layer is preferably 50 MPa or more, more preferably 70 MPa or more. The storage elastic modulus here is
It is the elastic modulus obtained by the dynamic viscoelastic method measured under the conditions of 110 Hz and 5 ° C./min. Storage elastic modulus is 50 MPa
If it is lower than this, the wire bondability is deteriorated, which is not preferable.

A high storage elastic modulus at high temperature is important in a semiconductor connecting substrate for wire bonding. Specifically, a general wire bonding temperature of 110 to 200 ° C. corresponds to this range.
Using the storage elastic modulus at 150 ° C as an index,
The above range is preferred.

The tape with an adhesive for semiconductor devices of the present invention may have a protective film layer. The protective film layer is not particularly limited as long as it can be peeled from the adhesive surface without deteriorating the form of the adhesive tape for semiconductor before heat-laminating copper foil, for example, a polyester film coated with silicone or a fluorine compound. , Polyolefin films, and papers laminated with these.

Next, a method for manufacturing a copper-clad laminate, a semiconductor connecting substrate and a semiconductor device using the adhesive tape of the present invention will be described as an example.

(1) Example of method for producing tape with adhesive agent An insulating film such as polyimide having the requirements of the present invention is coated with an adhesive composition solution by a coating method, dried, and then slit into a predetermined width. Obtain an adhesive tape. In addition, after the adhesive composition solution is applied onto a protective film such as a polyester film having releasability by a coating method and dried, a tape with an adhesive slit into a standard width of 29.7 to 60.6 mm is prepared. , Width 35-70m
100 to 160 in the center of the insulating film with a standard width of m
It may be used in the form of a tape with an adhesive for TAB by a method of hot roll lamination under the conditions of ° C, 10 N / cm, and 5 m / min.

(2) Method for producing copper-clad laminate A tape sample with an adhesive of Example (1) was coated with electrolytic copper or rolled copper foil of 3 to 35 μm at 110 to 180 ° C. and 30 N / c.
Laminate under the condition of m, 1 m / min. If necessary, stepwise heat curing treatment is carried out at 80 to 300 ° C. for 1 to 24 hours in an air oven to prepare a copper-clad laminate.
At this time, a device hole and a solder ball hole may be punched in the adhesive tape sample before the copper foil bonding.

(3) Method for producing substrate for semiconductor connection The formation of a photoresist film, etching, resist stripping on the copper foil surface of the copper clad laminate copper foil obtained in Example (2) by a conventional method,
Electrolytic gold plating and solder resist film formation are performed to prepare a semiconductor connection substrate (patterned tape) (FIG. 1).

(4) Example of Method of Manufacturing Semiconductor Device First, a semiconductor integrated circuit (IC) is bonded onto the patterned tape of (3) using an epoxy-based die bond material. Further, die bonding is performed on the opposite surface at 110 to 250 ° C. for 3 seconds, and the die bond material is cured if necessary. Next, wire bonding connection is performed under the conditions of 110 to 200 ° C. and 60 to 110 kHz. Finally, after the epoxy resin sealing and solder ball connection process, FP
-A BGA type semiconductor device is obtained (FIG. 2). Also, as the die-bonding material, an adhesive tape having an adhesive layer of 10 to 100 μm on both surfaces of an insulating film such as polyimide which satisfies the requirements of the invention may be used. In this case, the crimping onto the patterned tape and the crimping of the IC should be 80
It is preferably about 200 ° C and about 0.5 to 5 seconds. Further, after pressure bonding, if necessary, a stepwise heat curing treatment is performed at 80 to 300 ° C. for 1 to 24 hours to cure the adhesive.

[0036]

The present invention will be described below with reference to examples.
The invention is not limited to these examples. The evaluation method will be described before the description of the examples.

Evaluation Method (1) Evaluation Sample Preparation Method (a) Preparation of Adhesive-Coated Tape The adhesive compositions of Examples and Comparative Examples were mixed with each other in a predetermined solvent.
The mixture was stirred and mixed at 0 ° C to prepare an adhesive solution having a concentration of 15 to 40% by weight. This adhesive solution was coated with a bar coater on a polyethylene terephthalate (PET) protective film (25 μm) having releasability by silicone treatment so as to form an adhesive layer having a thickness of 12 μm after drying.
It was dried at 1 ° C. for 1 minute and 160 ° C. for 5 minutes. Then, an adhesive layer was applied to the insulating films of Examples and Comparative Examples 13
Hot roll lamination was carried out under the conditions of 0 ° C., 10 N / cm, and 3 m / min to prepare a 35 mm-width adhesive tape.

(B) Preparation of semiconductor connecting substrate for evaluation (patterned tape) 18 μm electrolytic copper foil (FQ-VLP manufactured by Mitsui Kinzoku Co., Ltd.) was added to the tape sample with adhesive of (a) at 140 ° C., 30 N /.
cm and 1 m / min. Then, in an air oven, 80 ° C for 4 hours, 100 ° C for 5 hours,
The tape was sequentially heat-cured at 160 ° C. for 4 hours to prepare a tape with a copper foil and adhesive for semiconductors. Photoresist film formation, etching, resist stripping, and electrolytic gold plating were performed on the copper foil surface of the obtained adhesive tape for semiconductors with copper foil by a conventional method to prepare an evaluation sample and a semiconductor device connecting substrate. Nickel plating thickness is 3μ
m, and the gold plating thickness was 1 μm.

(2) Preparation of semiconductor device for evaluation On the substrate for semiconductor connection for evaluation obtained in (1) (b), a die bond material (LE-5000 manufactured by Lintec Co., Ltd.) was used to form an IC of 20 mm square. Crimp. 160 ℃ in this state,
Heat cure for 30 minutes. Next, the IC and wiring board 1
After wire bonding connection with a gold wire having a diameter of 25 μm at 50 ° C. and 110 kHz, resin sealing is performed. Finally, solder balls were mounted by reflow to obtain a semiconductor device for evaluation.

(3) Warpage evaluation method The adhesive-coated tape sample of (1) (b) was laminated with an electrolytic copper foil of 18 μm under the conditions of 140 ° C., 30 N / cm, and 1 m / min. The sample is then 35mm wide x
Cut to 200 mm, and in an air oven at 80 ℃, 4
Sequential heat curing treatments were performed for 100 hours, 100 ° C., 5 hours, 160 ° C., and 4 hours to obtain a warp evaluation sample. Warpage is measured at 23 ° C. according to SEMI-G76-0299,
After conditioning the humidity at 55% RH for 24 hours, press one side of the sample and measure the height on the opposite side of the sample that warped up with a caliper and set it as the amount of warpage (when the copper foil warps upward, did).

(4) Wire Bonding Property Evaluation Method The gold wire of the semiconductor device for evaluation prepared in (2) was pulled by a tension gauge and the strength at that time was measured.

(5) Method for measuring storage elastic modulus The adhesive compositions of Examples and Comparative Examples were prepared in
The mixture was stirred and mixed at 0 ° C to prepare an adhesive solution having a concentration of 15 to 40% by weight. This adhesive solution was coated with a bar coater on a polyethylene terephthalate (PET) protective film (25 μm) having releasability by silicone treatment so as to form an adhesive layer having a thickness of 50 μm after drying.
It was dried at 1 ° C. for 1 minute and 160 ° C. for 5 minutes. afterwards,
In an air oven, 80 ° C., 4 hours, 100 ° C., 5 hours, 160 ° C., and 4 hours were sequentially heat-cured to obtain a storage elastic modulus measurement sample. The sample was cut into a measurement size (10 mm × 30 mm) and the protective film was peeled off. The obtained sample was set in a dynamic viscoelasticity measuring device (DMS-6100 manufactured by SII), and 110 Hz, 5 ° C /
The measurement was performed under the condition of min.

(6) Method of measuring humidity expansion coefficient Vacuum drying of the polyimide films of Examples and Comparative Examples 4
After the day, the length of 30 mm was marked and the dimension before moisture absorption was measured. After that, it was left for 7 days under a constant humidity condition of 23 ° C./60% RH, and the dimensions were measured after absorbing moisture. Using these obtained dimensions before and after moisture absorption and measured humidity, the coefficient of humidity expansion was calculated by substituting into the following equation.

Humidity expansion coefficient [ppm /% RH] = ((dimension after moisture absorption [mm] -dimension before moisture absorption [mm] / dimension before moisture absorption [mm]) / 60 [% RH]) × 10 ⁶ .

Reference Example 1 As a synthetic acid component of a polyamide resin, a dimer acid (manufactured by Unichema, "PRIPO")
L ″ 1009), adipic acid, and hexamethylenediamine as an amine component were used at a predetermined molar ratio, and an acid / amine reactant, an antifoaming agent and a phosphoric acid catalyst of 1% or less were added to prepare a polyamide reactant. 20 of this reactant
After thermally polymerizing at 5 ° C. and adding an antioxidant according to a standard method, the polyamide resin was taken out. Acid / amine component ratio,
The polymerization time was appropriately adjusted to obtain the following three polyamide resins.

[0046]   Polyamide resin A Acid value 1 Weight average molecular weight 100,000   Polyamide resin B Acid value 20 Weight average molecular weight 10,000   Polyamide resin C Acid value 10 Weight average molecular weight 20,000.

Reference Example 2 Synthesis of Base Film Using N, N-dimethylacetamide as a solvent
3 ', 4,4'-biphenyltetracarboxylic dianhydride and p-phenylenediamine were added in equimolar ratios to give about 10
The reaction was carried out for a time to obtain a polyamic acid solution. This solution was cast on a glass plate to form a coating film, and hot air at 130 ° C. was supplied to the surface for 60 minutes to dry and peel the film, thereby forming a film having self-holding property. This film is fixed to the support frame with a predetermined tension, and 200 ℃ ~ 450 ℃
The above heat treatment was appropriately performed to obtain polyimide films A to E having the characteristics shown in Table 1.

Example 1 Preparation of Tape with Adhesive 30 parts of polyamide resin A prepared in Reference Example 1, 10 parts of polyamide resin B, di-t-Bu, diglycidyl ether
Terbenzene epoxy resin ("Epotato" YDC-1312, epoxy equivalent 175, manufactured by Tohto Kasei Co., Ltd.) 5
Part, dicyclopentadiene epoxy resin (manufactured by Tohto Kasei Co., Ltd., "Epotato" ZX-1257, epoxy equivalent 257) 15 parts, t-butylphenol resole resin (manufactured by Shikoku Kasei Co., Ltd., CKM1634) 40 Parts and 0.3 parts of 2-undecyl imidazole were mixed, and the mixture was stirred and mixed in a mixed solvent of methanol / monochlorobenzene at 30 ° C. so as to have a concentration of 20% by weight to prepare an adhesive solution.

Using the obtained adhesive solution, (1) (a)
Adhesive sheet i was prepared in the same manner as described above. Further, the obtained adhesive sheet was laminated on the polyimide film A prepared in Reference Example 2 under the conditions of 120 ° C. and 1 kg / cm ² to prepare an adhesive tape. The resulting adhesive tape
Table 1 shows the characteristics of the mold.

Next, an adhesive tape with a copper foil was obtained in the same manner as (1) and (b), and then a substrate for connection to semiconductors (patterned tape) was prepared and the warpage was measured. In addition, a semiconductor device was prepared according to the procedure of (2) above, and the wire bonding property was evaluated.

Example 2 Using the adhesive sheet i prepared by the method shown in Example 1 and the polyimide film B prepared in Reference Example 2, the adhesive-coated sheet was prepared in the same manner as in Example 1. The pattern
Processing tape and semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Example 3 45 parts of polyamide resin C prepared in Reference Example 1, bisphenol A type epoxy resin (Yukaka Shell Epoxy Co., Ltd.)
"Epicote" 828) 0.5 part, t-butylphenol resole resin (Showa Polymer Co., Ltd., CKM16)
34G) 15 parts, bisphenol A type resin (manufactured by Gunei Chemical Co., Ltd., PL-4414) 15 parts, cresol novolac phenol resin (manufactured by Meiwa Kasei Co., Ltd., H-)
1) Mix 15 parts and stir in a mixed solvent of methanol / monochlorobenzene at 30 ° C. so that the concentration becomes 20% by weight,
An adhesive solution was prepared by mixing. An adhesive sheet ii was prepared from this adhesive solution in the same manner as in Example 1. Further, using the base film shown in Example 1,
In the same manner as in Example 1, a tape with an adhesive, a pattern processing tape, and a semiconductor device were prepared. Table 1 shows the obtained characteristics.
It was shown to.

Example 4 An adhesive sheet ii prepared by the method shown in Example 3 and a polyimide film C prepared in Reference Example 2 were used in the same manner as in Example 1 to prepare a tape with an adhesive. The pattern
Processing tape and semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Example 5 An adhesive sheet ii prepared by the method shown in Example 3 and a polyimide film D prepared in Reference Example 2 were used in the same manner as in Example 1 to prepare an adhesive-coated sheet. The pattern
Processing tape and semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Example 6 Using the adhesive sheet ii prepared by the method shown in Example 3 and the polyimide film E prepared by Reference Example 2, the adhesive-coated sheet was prepared in the same manner as in Example 1. The pattern
Processing tape and semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Comparative Example 1 Using the adhesive sheet i prepared in Example 1 and a commercially available polyimide film (Ube Industries, Ltd., "Yupirex" 50S), the same procedure as in Example 1 was used. , Tape with adhesive, pattern processing tape, and semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Comparative Example 2 Using the adhesive sheet ii prepared in Example 3 and a commercially available polyimide film ("U-Pyrex" 50S manufactured by Ube Industries, Ltd.), the same procedure as in Example 1 was used. , Tape with adhesive, pattern processing tape, and semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Comparative Example 3 Using the adhesive sheet ii prepared in Example 3 and a commercially available polyimide film ("Kapton" 200V manufactured by Toray DuPont Co., Ltd.), the same procedure as in Example 1 was used. An adhesive tape, a pattern processing tape, and a semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Comparative Example 4 45 parts of the polyamide resin A prepared in Reference Example 1, 10 parts of a phenol novolac type epoxy resin (EP152 manufactured by Petrochemicals Co., Ltd.), a bisphenol A type epoxy resin (oiled shell epoxy ( Co., Ltd., "Epico-
"828" 10 parts, phenol resin I (manufactured by Gunei Chemical Co., Ltd., PS2780) 25 parts, phenol resin II
10 parts of PSM4326 (manufactured by Gunei Chemical Co., Ltd.) was mixed and stirred in a methanol / monochlorobenzene mixed solvent at 30 ° C. so as to have a concentration of 20% by weight, and mixed to prepare an adhesive solution. An adhesive sheet iii was prepared from this adhesive solution in the same manner as in Example 1. Furthermore, using the polyimide film A prepared in Reference Example 2, Example 1
Adhesive tape, pattern processing tape in the same way as
A semiconductor device was created. The obtained characteristics are shown in Table 1.

Comparative Example 5 40 parts of the polyamide resin C prepared in Reference Example 1, bisphenol A type epoxy resin (Yukaka Shell Epoxy Co., Ltd.)
"Epicote" 828) 10 parts, trifunctional bisphenol A type epoxy resin (Mitsui Chemicals, Inc., VG310)
1) 10 parts, t-butylphenol resole resin (manufactured by Hitachi Chemical Co., Ltd., "Hitaanol" 2442) 27 parts, N,
N ′-(4,4′diphenylmethane) bismaleimide 1
5 parts were mixed and mixed with a mixed solvent of methanol / monochlorobenzene at 30 ° C. so as to have a concentration of 20% by weight, and mixed to prepare an adhesive solution. Example 1 from this adhesive solution
An adhesive sheet iv was prepared by using the same method as described above. Furthermore, using the polyimide film B prepared in Reference Example 2,
In the same manner as in Example 1, a tape with an adhesive, a pattern processing tape, and a semiconductor device were prepared. Table 1 shows the obtained characteristics.
It was shown to.

Comparative Example 6 The same procedure as in Example 1 was carried out using the adhesive sheet iii prepared in Comparative Example 4 and a commercially available polyimide film ("Yupirex" 50S manufactured by Ube Industries, Ltd.). Then, a tape with an adhesive, a pattern processing tape, and a semiconductor device were prepared. The obtained characteristics are shown in Table 1.

Comparative Example 7 The same procedure as in Example 1 was carried out using the adhesive sheet i prepared in Example 1 and a commercially available polyimide film ("Yupirex" 75S manufactured by Ube Industries, Ltd.). Then, a tape with an adhesive, a pattern processing tape, and a semiconductor device were prepared. The obtained characteristics are shown in Table 1.

[0063]

[Table 1]

From the results of Examples and Comparative Examples in Table 1, the tape with an adhesive for a semiconductor obtained according to the present invention was able to simultaneously improve the low warpage property and the wire bondability.

[0065]

According to the present invention, it is possible to obtain a tape with an adhesive for a semiconductor, which has excellent wire bondability and can reduce warpage, a copper-clad laminate using the tape, and a semiconductor device. You can

[Brief description of drawings]

FIG. 1 is a perspective view of an embodiment of a semiconductor connection substrate (patterned tape) before mounting a semiconductor integrated circuit, which is obtained by processing the adhesive tape for a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device (TCP) using the adhesive tape for a semiconductor device of the present invention.

FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using the adhesive tape for a semiconductor device of the present invention.

FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using the adhesive tape for a semiconductor device of the present invention.

[Explanation of symbols]

Insulating film with flexibility 2,12,25 adhesive 3 sprocket holes 4 device holes 5 Conductors for connecting semiconductor integrated circuits 6,14,22 Inner lead part 7 Outer lead part 8,15,21 semiconductor integrated circuit 9,16,24 Sealing resin 10,17 Gold bump 11 Protective film 13,19 Reinforcement plate 18,26 solder balls 15,27 Solder resist 20 Die attach

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) C09J 163/00 C09J 179/08 Z 179/08 201/00 201/00 H01L 23/14 R F term (reference) ) 4F100 AK01A AK33B AK49A AK49B AK53B BA02 BA07 EC18B EJ08B GB41 JA20A JG04A JK07B JL04 YY00A YY00B 4J004 AA11 AA12 AA13 AA16 AB05 CA06 CC02 FA05 4

Claims (6)

[Claims] 1. A laminate comprising an organic insulating film layer and at least one adhesive layer, wherein the insulating film layer has a thickness of 10 to 65 μm and a coefficient of humidity expansion of 8 ppm /
% RH or less, and the adhesive layer is 150 ° C. after curing
The tape with an adhesive for semiconductors having a storage elastic modulus of 50 MPa or more. 2. The tape with an adhesive for a semiconductor device according to claim 1, wherein the insulating film layer contains a polyimide resin as a main component. 3. The adhesive for a semiconductor device according to claim 1, wherein the adhesive layer contains at least one thermosetting resin selected from an epoxy resin, a phenol resin, a polyimide resin and a maleimide resin. tape. 4. A copper-clad laminate comprising the adhesive-attached tape for a semiconductor device according to claim 1. 5. A substrate for semiconductor connection, which uses the tape with an adhesive for a semiconductor device according to claim 1. 6. A semiconductor device using the copper clad laminate or the semiconductor connecting substrate according to claim 4.