JP2003092371A - Electronic components and their manufacturing method - Google Patents

Abstract

(57) [Summary] An electronic component having a wiring electrode formed on a substrate surface has a problem that moisture resistance reliability is deteriorated. The electronic component includes a substrate (101) and a wiring electrode (102) formed on at least one surface of the substrate (101), wherein the wiring electrode (102) covers a central conductor (103) and at least a part of the central conductor (103). And a coated conductor 104 formed of a conductive material having a higher corrosion resistance than the center conductor.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in electronic equipment represented by mobile communication equipment and personal digital assistants, and is used in electronic equipment such as semiconductors and piezoelectric vibrating devices having wiring electrodes made of a metal thin film on the surface of a substrate. More particularly, the present invention relates to a surface acoustic wave device used in a wireless circuit section of a mobile communication device and a method for manufacturing the same.

[0002]

2. Description of the Related Art As various electronic devices such as mobile communication devices, personal digital assistants, personal computers, etc. are miniaturized, digitalized, and the operating frequency is increased, the electronic parts constituting the devices are downsized and the wiring is shortened. There is a strong demand.
In addition, from the viewpoint of downsizing equipment and reducing the number of parts, there is an increasing demand for composite electronic parts that integrate and integrate multiple electronic parts, and the cost, size, and height of individual electronic parts are being reduced. The demand is ever increasing.

In response to such demands, in electronic parts such as semiconductor devices, electronic parts having a CSP (chip size package) structure using various flip-chip mounting technologies are practically used, instead of a package structure using conventional wire bonding technology. Has been converted. Further, also in a surface acoustic wave device having a vibrating region on the substrate surface, or a piezoelectric bulk wave device using a crystal or a piezoelectric ceramic, similar to the semiconductor device and the like, from a mounting method using a conventional wire bonding technique, for example, Flip-chip mounting technology using gold bumps has come to be used, and small and low-profile electronic components have come to be provided.

However, the advancement of the mounting technology alone cannot sufficiently meet the demands for the reduction of the height and the reduction of the cost. Therefore, a package formed by resin molding or an element (substrate) forming an electronic component is required. A bare chip mounting method for directly mounting on a circuit board has also been proposed. These trends are the same for electronic components having a vibrating part such as a surface acoustic wave device, for which a hermetic seal was indispensable because the element is conventionally sensitive to the external environment such as humidity. Electronic components having a simple package structure or a resin sealing structure have been proposed.

A conventional electronic component will be described in detail below with reference to the drawings. FIG. 10 is a sectional view showing an electronic component having the conventional resin sealing structure. Further, FIG. 11 is a cross-sectional view of a wiring electrode portion of the conventional electronic component, and FIG.
And are shown upside down. 10 and 11, 201 is a substrate, 202 is a wiring electrode, 203 is an extraction electrode, 204 is a protective film, 205 is a conductive protrusion, and 206 is a conductive film.
Is a circuit board, and 207 is a sealing resin.

As the substrate 201, a semiconductor substrate typified by Si, GaAs, or SiGe is used in electronic parts such as semiconductor devices. Further, in piezoelectric vibrating components such as surface acoustic wave devices, piezoelectric substrates such as lithium tantalate, lithium niobate, quartz, and piezoelectric ceramics are mainly used. For the wiring electrode 202, an Al alloy having a small electrode resistance and capable of easily forming a fine pattern is used, and in recent years, a Cu electrode having a smaller resistivity has also been used in the semiconductor field.

The surface of the wiring electrode is covered with a protective film 204 to prevent corrosion of the electrode material and a short circuit between the wiring electrodes 202 due to foreign conductive foreign matter, except for the lead electrode 203 portion for electrically connecting to the outside. Protected. As the protective film 204, an inorganic thin film such as silicon nitride or silicon oxide, or an organic film such as polyimide is generally used. The extraction electrode 203 is electrically connected to the outside,
Conductive protrusions 205 such as Au bumps, Cu plated bumps, and solder bumps are formed. Then, the conductive protrusion 2
Electrical connection is made with the circuit board 206 via 05.

A sealing resin 207 is filled between the board 201 and the circuit board 206 to reinforce the adhesive strength between the board and the circuit board and prevent foreign matter and moisture from entering from the outside. There is. Further, in an electronic component such as a surface acoustic wave device, a vibrating space is required around the wiring electrode 202, so the sealing resin 207 is arranged around the substrate 201.

As described above, by realizing an electronic component having a resin-sealed structure, it has been possible to realize a small-sized and low-profile electronic component at low cost. Further, by protecting the substrate surface with the protective film 204 and the sealing resin 207, it has been possible to secure a certain degree of reliability.

[0010]

However, in the case of the above-mentioned conventional electronic parts, in order to secure the moisture resistance reliability, an inorganic protective film such as micron-order silicon nitride or silicon oxide, or an organic based film such as polyimide is used. It was necessary to form a protective film. Therefore, there is a problem that reliability of the wiring electrode is impaired because residual stress to the wiring electrode generated when the protective film 204 is formed becomes large and stress migration occurs. In addition, the extraction electrode 2
It is necessary to provide an opening for forming the conductive protrusion in the 03rd part, which requires a step of patterning the protective film, which complicates the manufacturing process.

The insulating protective film 20 is formed on the wiring electrode 202.
In the case of the conventional electronic component in which No. 4 is formed, there is a problem that the insulating protective film easily causes dielectric breakdown due to voltage application from the outside. Even if the insulating protective film is destroyed in a very small area, the moisture resistance of the wiring electrode is significantly reduced, and it is difficult to sufficiently secure the moisture resistance reliability as an electronic component. Particularly, in the case of a surface acoustic wave device using a piezoelectric substrate such as lithium tantalate having pyroelectricity, there is a problem that a discharge occurs between wiring electrodes due to a change in environmental temperature and the insulating protective film is destroyed. Was. Therefore, it has been difficult to secure the moisture resistance of the wiring electrode by the protective film.

Further, in a surface acoustic wave device or the like, the formation of the protective film hinders elastic vibration excited on the surface of the substrate, resulting in large fluctuations in electrical characteristics. For this reason, there are problems such as a decrease in manufacturing yield and difficulty in achieving desired electrical characteristics. On the other hand, if the protective film is made thin so as not to affect the electrical characteristics, the protection of the side surface of the wiring electrode may be reduced depending on the cross-sectional shape of the wiring electrode, making it difficult to ensure sufficient moisture resistance reliability. It was Further, a method has been proposed in which the wiring electrode surface is uniformly coated with a thin oxide by an anodic oxidation method, but there is a problem that the resistance of the wiring electrode increases.

The present invention is to solve the above-mentioned conventional problems, and is represented by an electronic device represented by a semiconductor device, a surface acoustic wave device, a piezoelectric device such as a bulk wave device, in which wiring electrodes are formed on the substrate surface. It is an object of the present invention to provide an electronic component having excellent reliability, particularly moisture resistance reliability, and a method for manufacturing the same, without forming a thick protective film on a wiring electrode.

It is another object of the present invention to provide an electronic component and a method for manufacturing the same, which can simplify the manufacturing process and reduce the manufacturing cost because it is not necessary to form an opening in the extraction electrode part.

Further, it is possible to suppress the stress migration due to the residual stress due to the formation of the protective film, to provide an electronic component without deterioration of the wiring electrode, and to prevent the electrode from being damaged even when an external voltage such as static electricity is applied. An object of the present invention is to provide a highly reliable electronic component and its manufacturing method.

[0016]

In order to achieve the above object, an electronic component of the present invention is an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate. It is characterized in that the wiring electrode is composed of a central conductor and a coated conductor formed so as to cover at least a part of the central conductor.

In the electronic component of the present invention, the center conductor is
It is characterized by being made of Al or an alloy containing Al as a main component.

In the electronic component of the present invention, the central conductor is
It is characterized by having a laminated structure of a metal layer and an Al layer or an alloy layer containing Al as a main component. Further, the metal layer is made of Ti.

In the electronic component of the present invention, the central conductor is
It consists of an alloy containing Al as its main component, and contains B, Mg, Si, and S.
c, Ti, V, Cr, Mn, Zr, Nb, Mo, Hf,
It is characterized by containing at least one selected from Ta as an additional element. Further, the central conductor is
It is characterized by containing Li as an additional element.

In the electronic component of the present invention, the central conductor is
It is characterized in that it is made of Al or an alloy containing Al as a main component, and that the coated conductor is made of a nitride or a composite nitride of the element forming the central conductor.

In the electronic component of the present invention, the central conductor is
The coated conductor is made of an alloy containing Al as a main component, and the coated conductor contains at least one additional element forming the central conductor in a larger amount than that in the central conductor.

Further, the electronic component of the present invention is characterized in that the resistivity of the coated conductor is higher than that of the central conductor.

The electronic component of the present invention is particularly characterized in that the electronic component is a surface acoustic wave device.

The electronic component of the present invention is characterized in that a protective film is provided on the wiring electrodes. Furthermore, the thickness of the protective film is 300 nm or less.

In order to achieve the above object, the method of manufacturing an electronic component of the present invention includes a substrate and a wiring electrode formed on at least one surface of the substrate and including a center conductor and a coated conductor. In a method of manufacturing an electronic component, at least a step of forming a central conductor on the substrate, and heat treating the substrate on which the central conductor is formed in nitrogen to nitride at least a peripheral portion of the central conductor. And a step of forming a coated conductor made of a metal nitride film.

Further, the method of manufacturing an electronic component of the present invention includes at least a method of manufacturing an electronic component including a substrate and a wiring electrode which is formed on at least one surface of the substrate and includes a center conductor and a coating conductor. A step of forming a central conductor on the substrate, and a substrate on which the central conductor is formed,
Different from the central conductor so as to cover at least a part of the central conductor by segregating the additive element of the central conductor to the peripheral portion by heat treatment in nitrogen or a reducing atmosphere similar thereto or under reduced pressure. And a step of forming a coated conductor having an alloy composition.

Furthermore, the method of manufacturing an electronic component of the present invention is
The step of forming the coated conductor is characterized by further including a step of irradiating a laser.

Further, the method of manufacturing an electronic component of the present invention comprises at least a method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate and including a center conductor and a coating conductor. Forming a central conductor on the substrate, and implanting nitrogen ions into the substrate on which the central conductor is formed, thereby nitriding at least a peripheral portion of the central conductor to form a coated conductor made of a metal nitride film. It is characterized by including the step of performing.

The method of manufacturing an electronic component of the present invention is characterized in that the electronic component is a surface acoustic wave device.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to FIGS. 1 to 9.

(Embodiment 1) FIG. 1 is a sectional view showing a structure of a wiring electrode portion of an electronic component according to Embodiment 1 of the present invention. In FIG. 1, 101 is a substrate, 102 is a wiring electrode, and the wiring electrode 102 is composed of a central conductor 103 and a coated conductor 104. The structure of the wiring electrode portion of the electronic component and the manufacturing method thereof according to the present embodiment will be described below in detail with reference to the drawings.

The center conductor 103 of the wiring electrode is formed on one surface of the substrate 101 by a usual photolithography technique. As the substrate 101, a semiconductor substrate such as Si or GaAs can be used for an electronic component such as a semiconductor device. Further, in a piezoelectric vibrating component such as a surface acoustic wave device, a piezoelectric single crystal substrate such as lithium tantalate, lithium niobate, or crystal can be used.
The present invention has the same effect regardless of the substrate material, and does not particularly limit the functions of the substrate material and the electronic component. Further, the same effect can be obtained even in an electronic component in which a functional thin film is formed on the substrate.

A coated conductor 104 is formed so as to cover the central conductor 103. Coated conductor 104
Is formed so as to cover the periphery of the center conductor except for the interface between the substrate 101 and the center conductor 103. The material forming the coated conductor is more excellent in corrosion resistance (corrosion potential is noble) than that of Al or Cu forming the central conductor, for example, Ti or T
By using a metal such as a, it is possible to provide an electronic component having excellent moisture resistance reliability.

As the metal species having excellent corrosion resistance, the above-mentioned T
In addition to i and Ta, Pt, Au, etc. may be mentioned. In principle, it is possible to form these materials so as to directly cover the periphery of the wiring electrode by repeating the photolithography technique. However, the manufacturing method becomes complicated, which is a major factor in increasing the manufacturing cost of electronic components. In addition, with the recent progress in miniaturization of wiring electrodes, it is not practical to directly form such coated conductors on wiring electrodes on the order of submicrons. Further, when the variation of the film thickness or the line width of the wiring electrode has a great influence on the electrical characteristics like the surface acoustic wave device, it is difficult to control the variation of the characteristics and it is not practical. Therefore, in this embodiment, as described later, the nitride of the central conductor 103 is used as the coated conductor 104 to form the wiring electrode 102.

Generally, when a resin is present around the substrate and the wiring electrodes as in the case of the electronic component having the resin-sealed structure, chlorine ions or bromine ions unavoidably contained as impurities in the resin. In many cases, water permeating the resin is acidic due to organic acid ions. Therefore,
The coated conductor is required to have a high corrosion potential, especially in an acidic region. The corrosion potential can be qualitatively determined by measuring the anodic polarization of the electrode material.

In FIG. 2, a 0.3% NaCl aqueous solution of an Al thin film, a Ti thin film, and a Ta thin film (film thickness is about 300 nm) formed on a lithium tantalate substrate was adjusted to pH = 3 with sulfuric acid. The result of anodic polarization measurement in a solution is shown. Polarization measurement was carried out by sufficiently removing dissolved oxygen by nitrogen bubbling, then sweeping at 0.5 mV / sec at room temperature, and using Ag / AgCl electrode as a reference electrode and P as a counter electrode.
It was performed using a t-electrode. (Note that the results of the anodic polarization measurement shown below were all performed under the same conditions.) As can be seen from FIG. 2, it is found that Ti and Ta have extremely excellent corrosion resistance as compared with Al. Since these results largely depend on the state of the electrode surface, quantitative judgment cannot be made simply. Further, in the curve of the Al thin film in FIG. 2, the exposure of the substrate was confirmed by the dissolution of the Al thin film near 0 V, so that the current density after that was not always an accurate value.

It has been confirmed as follows that these results are in agreement with the results of a moisture resistance test in which a surface acoustic wave device using the electrode as an actual electronic component was manufactured. As a surface acoustic wave device, a 900 MHz band ladder type filter was formed on a lithium tantalate substrate by using the above various electrode materials. Since the electric conductivity, the density, the elastic constant, and the like of the electrodes are different, the electric characteristics are different, but they are sufficient for the moisture resistance evaluation. The surface acoustic wave device was resin-sealed, and a humidity resistance test was performed under the conditions of 85 ° C. and relative humidity of 85%. In the case of the Al electrode, an increase in loss was confirmed from several hundred hours.

On the other hand, in the case of an electrode using Ta and Ti, deterioration of loss was not observed even after 2000 hours,
No deterioration of the electrode surface was observed. In addition, Ta and T
The surface acoustic wave device using i has a large loss due to electrode resistance and is not suitable for practical use, and thus has reached the present invention. In the present embodiment, the surface acoustic wave device is used as the electronic component to evaluate the moisture resistance, because it is considered that the influence of the corrosion of the wiring electrode on the electrical characteristics is significant. .

As described above, the wiring electrode is made of T excellent in moisture resistance.
Forming a metal such as i or Ta generally has a large electric resistance, and thus is difficult to use for an electronic component.
Further, although metals such as Au are excellent in electrical resistance, they are not preferable in practice because of high material cost and difficulty in forming fine patterns. Also,
In the case of a surface acoustic wave device, it is also desired that the wiring electrodes have a low density, so that it is practically difficult to use the above metal species as the wiring electrodes.

Therefore, in the present embodiment, the coated conductor is formed by the following manufacturing method. According to this method, it is possible to form a wiring electrode having a low density of electrode material without repeating the photolithography technique.

First, on the substrate 101, in the same manner as described above,
A wiring electrode made of Al is formed. Next, the substrate on which the wiring electrode is formed is heat-treated in nitrogen to nitride the surface layer of the wiring electrode, thereby forming a nitrided Al (AlN) layer.
Form the layers. In this way, unnitrided Al
The wiring electrode 102 is formed of the central conductor 103 made of and a coating conductor 104 made of very thin AlN.

FIG. 3 shows an Al thin film formed on a lithium tantalate substrate and a nitriding treatment (in nitrogen, 300 ° C., 2 ° C.).
The results of anodic polarization measurement of a solution of an Al thin film subjected to time) in a 0.3% NaCl aqueous solution adjusted to pH = 3 with sulfuric acid are shown. From this result, it is understood that the moisture resistance is improved by using the Al nitride film forming the central conductor as the coated conductor.

The atmosphere during the heat treatment is 4N (99.99).
%) Or higher purity nitrogen atmosphere is preferable, but there is no particular problem as long as the oxygen partial pressure is sufficiently low. Also, a reducing gas such as nitrogen and hydrogen, or a mixed gas atmosphere of nitrogen and an inert gas such as argon may be used. Further, there is no particular regulation regarding the heat treatment temperature. This is because the surface condition of the electrode material varies depending on the process (film forming process, patterning process, etc.) that the electrode material has undergone, and therefore cannot be specified unconditionally. For example, in the case of the Al electrode according to the present embodiment, nitriding of the surface could be confirmed at about 200 ° C. or higher, and the effect of improving the moisture resistance was confirmed. However, by heat treatment at a higher temperature, a dense nitride film can be formed, and an electronic component having high moisture resistance reliability can be obtained.

When heat treatment at a high temperature is not possible due to the characteristics of electronic parts, a good nitride film can be obtained by increasing the pressure of atmospheric gas. For example,
Even in heat treatment at 150 ° C or higher in nitrogen at 3 atm,
Surface nitriding of the Al electrode was confirmed. Further, laser may be irradiated in the step of nitriding the central conductor. As a result, a good nitride film can be formed at a low temperature. If damage to the substrate does not cause any particular problem, nitrogen ions may be implanted to nitride the surface layer of the central conductor.

With respect to the film thickness of the nitride film, according to the above-mentioned manufacturing method, it can be formed very thin, about several nm to 10 nm, though it depends on the processing time. Therefore, the resistivity of the wiring electrode does not increase so much, and the reliability can be improved without affecting the electrical characteristics. Also,
Since it is possible to form a nitride film that is a covered conductor uniformly around the central conductor regardless of the surface shape of the wiring electrode, particularly the shape of the side surface, the side surface of the wiring electrode can be formed without forming a thick covered conductor. It is possible to obtain an electronic component having a good coating state and excellent moisture resistance reliability. In electronic parts such as semiconductors, there may be no problem even if the coated conductor is formed thick, but in the surface acoustic wave device or the like, the manufacturing method according to the present invention that can form an extremely thin coated conductor is preferable.
As a result, it is possible to obtain an electronic component having a small characteristic variation and a high manufacturing yield.

Further, in the present embodiment, the moisture resistance reliability in the acidic region has been described, but for example, in the vicinity of neutral (p
H = 6-8) and alkaline region (pH = 8 or more)
The same effect is confirmed in.

As described above, in the electronic component including the substrate and the wiring electrode formed on at least one surface of the substrate, the wiring electrode includes the central conductor and at least a part of the central conductor. An electronic component having a covered conductor formed so as to cover the electronic component is excellent in moisture resistance reliability. Even when the extraction electrode has the same structure as the wiring electrode, the coating conductor has conductivity, so that the step of forming an opening in the protective film, which is conventionally necessary for forming the conductive protrusion, is eliminated. Therefore, the manufacturing cost can be suppressed.

Further, by covering the center electrode with a conductive material, the covering layer does not cause dielectric breakdown even when a voltage is applied from the outside, so that it is more reliable than the conventional insulating protective film. A highly reliable electronic component can be obtained.

The center conductor is preferably Al, and the coated conductor is preferably made of an Al nitride constituting the center conductor. As a result, a stable and dense nitride film (AlN) can be formed near room temperature. Further, it is possible to form an extremely thin covered conductor, and it is possible to obtain an electronic component which is good and whose characteristic fluctuation is small without deteriorating the electrode resistance of the wiring electrode.

The resistivity of the coated conductor is preferably higher than that of the central conductor. As a result, the current distribution in the wiring electrode is concentrated on the central conductor, and it is possible to provide an electronic component without deterioration in electrical characteristics. In particular, when the electronic component is a surface acoustic wave device, the influence of the coated conductor on the electrical characteristics is small, so that it is possible to provide an electronic component having excellent moisture resistance reliability without impairing the conventional electrical characteristics. . Further, since the AlN film has a very large hardness and elastic constant, it is possible to reduce the viscous loss of elastic waves, which also contributes to lowering the loss.

Although the protective film is not formed in the present embodiment, since the moisture resistance is ensured by the structure of the wiring electrode, as shown in FIG. 9, the protective film is much thinner than the conventional one. By forming the, it is possible to prevent a short circuit between the wiring electrodes due to a conductive foreign substance. Therefore, the influence of stress migration, which is a problem in the case of the conventional electronic component, can be significantly suppressed, and an electronic component with high reliability can be obtained. The protective film preferably has a thickness of 300 nm or less. As a result, it is possible to reduce characteristic deterioration to a practical level even in an electronic component using elastic vibration such as a surface acoustic wave device.

Further, in the method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate to obtain the electronic component, at least a step of forming a wiring electrode on the substrate And a step of forming a covered conductor by nitriding at least a peripheral portion of the wiring electrode by heat-treating the substrate on which the wiring electrode is formed in nitrogen. The manufacturing method can provide a highly reliable electronic component.

In the step of forming the coated conductor,
Further, it is preferable to include a step of irradiating a laser.
As a result, a favorable nitride film can be formed at a lower temperature, and the adverse effect of heat on electronic components can be reduced.

In the method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate and including a central conductor and a coated conductor, at least a step of forming the central conductor on the substrate And a step of forming a coated conductor made of a metal nitride film by nitriding at least a peripheral portion of the central conductor by implanting nitrogen ions into the substrate on which the central conductor is formed. The same effect can be realized by the manufacturing method of the electronic component.

(Second Embodiment) Next, an electronic component and a method of manufacturing the same according to a second embodiment of the present invention will be described. Similar to the first embodiment, the center conductor 103 of the wiring electrode is formed on one surface of the substrate 101 by a normal photolithography method. A covering conductor 104 is formed so as to cover the central conductor 103. The covered conductor 104 is formed so as to cover the periphery of the center conductor except for the interface between the substrate 101 and the center conductor 103.

In this embodiment, a wiring electrode made of an Al alloy containing Al as a main component is formed on the substrate 101. Next, the substrate on which the wiring electrodes are formed is heat-treated in nitrogen to nitride the surface layer of the wiring electrodes.
In this way, the central conductor 103 made of an unnitrided Al alloy and a very thin composite nitride (Al-X-
The wiring electrode 102 including the coated conductor 104 made of N: X is an additive alloy element is formed.

Here, as the additive alloy element, B, Mg, Si, Sc and T which form a stable nitride at room temperature.
An element selected from i, V, Cr, Mn, Zr, Nb, Mo, Hf, and Ta is preferable. This gives A
It is possible to form a stable composite nitride of 1 and an additional element, and as a result, it is possible to form a coated conductor having excellent moisture resistance.

FIG. 4 shows Ti (3w) as an additive alloy element.
t%) is used to show the anodic polarization curve. As can be seen from FIG. 4, compared to pure Al, Ti
It can be seen that there is an effect of improving the moisture resistance by adding 3%. However, the exposure of the substrate was observed due to the elution of the alloy thin film. On the other hand, when the Al—Ti electrode was subjected to a nitriding treatment (300 ° C., 2 hours) in a pressure furnace at 3 atm, it was found that a coated conductor having extremely high moisture resistance was formed. Such a result was also confirmed when the other alloying elements were added.

Further, if the content of the additive alloy element is increased, the moisture resistance is improved, but there is a problem that the resistivity is increased. However, in the present embodiment, it was confirmed that the heat treatment causes the resistivity of the Al alloy of the central conductor to decrease, and there is no practical problem. FIG. 5 shows an example of frequency characteristics of the surface acoustic wave filter according to the present embodiment. It can be seen that by adding Ti as an additional alloying element, the insertion loss is deteriorated due to the increase in resistivity, but the characteristics are recovered by the nitriding heat treatment. As described above, by performing the heat treatment in the step of performing the nitriding treatment, it is possible to obtain an electronic component having good electrical characteristics and excellent reliability. Regarding the amount of alloying elements added, the behavior differs depending on the element to be added, and the required range for the resistivity and elastic constant for the wiring electrodes also differs depending on the application of the electronic component. I can't.

When an Al alloy is used as the central conductor, since it has better moisture resistance than pure Al, it is not necessary to cover the entire circumference of the central conductor with a coated conductor. As shown, it may cover only a part of the periphery of the center conductor. Further, the central conductor does not necessarily have a single phase depending on the type and the amount of the added alloy element. For this reason, it is difficult to make the thickness of the coated conductor, which is a nitride film, uniform, but it does not affect the moisture resistance at all.

Further, in the electronic component of the present embodiment, it is preferable that Li is further contained as an additive alloy element of the wiring electrode. When an Al alloy is used as the central conductor, the density of wiring electrodes generally increases. In particular, when the electronic component is a surface acoustic wave device, the mass addition effect of the wiring electrode greatly affects the characteristics. Therefore, if a high-density metal is used as the wiring electrode, it becomes difficult to control the film thickness, and the manufacturing yield decreases. Invite. Li as an alloy addition element has a large effect of reducing its density, and when added to an Al alloy containing a metal that forms the stable nitride, it has a great effect of reducing the density of the wiring electrode. As a result, it becomes easy to control the film thickness during film formation, which can contribute to the improvement of the yield.

As described above, in the electronic component provided with the substrate and the wiring electrode formed on at least one surface of the substrate, the wiring electrode includes the central conductor and at least a part of the central conductor. An electronic component having a covered conductor formed so as to cover the electronic component is excellent in moisture resistance reliability. Even when the extraction electrode has the same structure as the wiring electrode, the coating conductor has conductivity, so that the step of forming an opening in the protective film, which is conventionally necessary for forming the conductive protrusion, is eliminated. Therefore, the manufacturing cost can be suppressed.

Further, by covering the center electrode with a conductive material, the covering layer does not cause dielectric breakdown even when a voltage is applied from the outside, so that it is more reliable than the conventional insulating protective film. A highly reliable electronic component can be obtained.

Further, the central conductor is preferably an alloy containing Al as a main component, and the coated conductor is preferably composed of a composite nitride of an alloy containing Al as a main component constituting the central conductor. Further, as the additive alloy element, B, Mg, Si, Sc and T which form a stable nitride at room temperature.
An element selected from i, V, Cr, Mn, Zr, Nb, Mo, Hf, and Ta is preferable. As a result, a stable and dense composite nitride film can be formed near room temperature. Further, as in the first embodiment of the present invention, it is possible to form an extremely thin covered conductor, and it is possible to obtain a good electronic component with small characteristic fluctuations without deteriorating the electrode resistance of the wiring electrode.

Further, since the power resistance of the wiring electrode itself is improved by using the alloy as the center conductor, it can be applied to a device requiring power resistance such as a surface acoustic wave duplexer. is there. In this way, by using a wiring electrode having both moisture resistance and power resistance, even in a surface acoustic wave duplexer where a hermetic seal is conventionally required,
An electronic component having a resin-sealed structure can be realized.

Further, the resistivity of the coated conductor is preferably higher than that of the central conductor. As a result, the current distribution in the wiring electrode is concentrated on the central conductor, and it is possible to provide an electronic component without deterioration in electrical characteristics. In particular, when the electronic component is a surface acoustic wave device, the influence of the coated conductor on the electrical characteristics is small, so that it is possible to provide an electronic component having excellent moisture resistance reliability without impairing the conventional electrical characteristics. . Further, since the Al-X-N-based composite nitride film (X is an additive alloy element) has a very large hardness and elastic constant,
Viscous loss of elastic waves can be reduced, which also contributes to low loss.

Although the protective film is not formed in this embodiment, since the moisture resistance is ensured by the structure of the wiring electrode, the conductive film is formed by forming a protective film which is much thinner than the conventional one. It is possible to prevent a short circuit between the wiring electrodes due to a foreign substance. Therefore, the influence of stress migration, which is a problem in the case of the conventional electronic component, can be significantly suppressed, and an electronic component with high reliability can be obtained. The protective film preferably has a thickness of 300 nm or less. As a result, it is possible to reduce characteristic deterioration to a practical level even in an electronic component using elastic vibration such as a surface acoustic wave device.

In the method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate to obtain the electronic component, at least a step of forming a wiring electrode on the substrate And a step of forming a covered conductor by nitriding at least a peripheral portion of the wiring electrode by heat-treating the substrate on which the wiring electrode is formed in nitrogen. The manufacturing method can provide a highly reliable electronic component.

In the step of forming the coated conductor,
Further, it is preferable to include a step of irradiating a laser.
As a result, a favorable nitride film can be formed at a lower temperature, and the adverse effect of heat on electronic components can be reduced.

In the method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate and including a central conductor and a covering conductor, at least a step of forming the central conductor on the substrate And a step of forming a coated conductor made of a metal nitride film by nitriding at least a peripheral portion of the central conductor by implanting nitrogen ions into the substrate on which the central conductor is formed. The same effect can be realized by the manufacturing method of the electronic component.

(Third Embodiment) FIG. 7 is a sectional view showing a structure of a wiring electrode portion of an electronic component according to a third embodiment of the present invention. In FIG. 3, 101 is a substrate, 102 is a wiring electrode, and the wiring electrode 102 is composed of a central conductor 103 and a coated conductor 104. Further, the central conductor 103 is
A first metal layer 103a made of Al or an alloy containing Al as a main component, and a second metal layer 103a having a thickness smaller than that of the first metal layer.
Of the metal layer 103b. The electronic component and the method for manufacturing the same according to the third embodiment of the present invention will be described below.

On one surface of the substrate 101, the center conductor 103 of the wiring electrode having a laminated structure of the first metal layer 103a and the second metal layer 103b is formed by the usual photolithography technique. Then, the central conductor 10
The covered conductor 104 is formed so as to cover the conductor 3.
The covered conductor 104 is formed so as to cover the periphery of the center conductor except for the interface between the substrate 101 and the center conductor 103.

In this embodiment mode, the first metal layer 103a is formed.
As the material, Ti having a thickness of 30 nm was used. Further, Al-1 wt% T containing Al as a main component as the second metal layer 103b.
i alloy was used. In addition, as the first metal layer, B, M
g, Si, Sc, Ti, V, Cr, Mn, Zr, Nb,
It is preferable to use an element such as Mo, Hf, or Ta that forms a stable nitride, but there is no particular limitation. Moreover,
It is preferable to use a metal such as Ti or Ta, which has a higher corrosion potential than the second metal layer, and to stack the metal on the second metal layer. As a result, it is possible to obtain an electronic component having further excellent moisture resistance reliability. The second metal layer may be an alloy containing Al or a metal forming the stable nitride.

In this embodiment mode, the second metal layer 103b is used.
Are formed so that the upper and lower sides thereof are sandwiched by the first metal layer 103a. Although the central conductor having a three-layer structure is used in this embodiment, the number of layers is not particularly limited. By forming a first metal layer made of Ti as a base electrode between the substrate 101 and the second metal layer 103b,
The crystal orientation of the Al alloy electrode, which is the second metal layer, becomes good, and the homogeneous covered conductor 104 can be formed on the side surface portion of the second metal layer.

Incidentally, as a similar effect,
Cr, Ta, Zr, Mo or the like may be used for the first metal layer. This is because, in the dry etching step of forming the center conductor, the etching rate on the side surface of the electrode becomes uniform, so that unevenness on the side surface of the electrode is suppressed. As a result, as in the case of the first embodiment, a highly reliable electronic component can be obtained when the coated conductor made of the nitride of the central conductor is formed.

Although Ti is used as the first metal layer in this embodiment, it also has the effect of improving the adhesion between the substrate 101 and the wiring electrode. Further, by forming the first metal layer also on the second metal layer, it is possible to obtain an electronic component having more excellent moisture resistance reliability.

The covered conductor 104 is formed by heat-treating the substrate on which the wiring electrode is formed in nitrogen to nitride the surface layer of the wiring electrode.
That is, a very thin compound nitride (Al
-X-N: X is an additive alloy element, and a nitride film of the first metal layer (Ti in the present embodiment) is formed on the center conductor.
N) is formed.

As described above, in the electronic component including the substrate and the wiring electrode formed on at least one surface of the substrate, the wiring electrode includes the first metal layer and the second metal layer. An electronic component having excellent moisture resistance reliability can be obtained by an electronic component characterized by comprising a central conductor having a laminated structure of and a coated conductor formed so as to cover at least a part of the central conductor. . Even when the extraction electrode has the same structure as the wiring electrode, the coating conductor has conductivity, so that the step of forming an opening in the protective film, which is conventionally necessary for forming the conductive protrusion, is eliminated. Therefore, the manufacturing cost can be suppressed.

Further, by covering the center electrode with a conductive material, the covering layer does not cause dielectric breakdown even when a voltage is applied from the outside, so that it is more reliable than the conventional insulating protective film. A highly reliable electronic component can be obtained.

Further, it is preferable that the first metal layer is Ti, which makes it possible to form the second metal layer having excellent orientation and obtain a more reliable electronic component. . Further, by forming the first metal layer on the center electrode as well, a more reliable electronic component can be obtained. In this case, it is preferable to use, as the first metal layer, a metal having a higher corrosion potential than that of the second metal layer, such as Ti or Ta.

The center conductor is preferably an alloy containing Al as a main component, and the coated conductor is preferably composed of a composite nitride of an alloy containing Al as a main component that constitutes the center conductor. Further, as the additive alloy element, B, Mg, Si, Sc and T which form a stable nitride at room temperature.
An element selected from i, V, Cr, Mn, Zr, Nb, Mo, Hf, and Ta is preferable. As a result, a stable and dense composite nitride film can be formed near room temperature. Further, as in the first embodiment of the present invention, it is possible to form an extremely thin covered conductor, and it is possible to obtain a good electronic component with small characteristic fluctuations without deteriorating the electrode resistance of the wiring electrode.

The resistivity of the coated conductor is preferably higher than that of the central conductor. As a result, the current distribution in the wiring electrode is concentrated on the central conductor, and it is possible to provide an electronic component without deterioration in electrical characteristics. In particular, when the electronic component is a surface acoustic wave device, the influence of the coated conductor on the electrical characteristics is small, so that it is possible to provide an electronic component having excellent moisture resistance reliability without impairing the conventional electrical characteristics. . Further, since the Al-X-N-based composite nitride film (X is an additive alloy element) has a very large hardness and elastic constant,
Viscous loss of elastic waves can be reduced, which also contributes to low loss.

Although the protective film is not formed in the present embodiment, since the moisture resistance is ensured by the structure of the wiring electrode, the conductive film is formed by forming a protective film which is much thinner than the conventional one. It is possible to prevent a short circuit between the wiring electrodes due to a foreign substance. Therefore, the influence of stress migration, which is a problem in the case of the conventional electronic component, can be significantly suppressed, and an electronic component with high reliability can be obtained. The protective film preferably has a thickness of 300 nm or less. As a result, it is possible to reduce characteristic deterioration to a practical level even in an electronic component using elastic vibration such as a surface acoustic wave device.

In the method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate in order to obtain the electronic component, at least a step of forming a wiring electrode on the substrate And a step of forming a covered conductor by nitriding at least a peripheral portion of the wiring electrode by heat-treating the substrate on which the wiring electrode is formed in nitrogen. The manufacturing method can provide a highly reliable electronic component.

In the step of forming the coated conductor,
Further, it is preferable to include a step of irradiating a laser.
As a result, a favorable nitride film can be formed at a lower temperature, and the adverse effect of heat on electronic components can be reduced.

In a method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate and including a central conductor and a covering conductor, at least a step of forming the central conductor on the substrate And a step of forming a coated conductor made of a metal nitride film by nitriding at least a peripheral portion of the central conductor by implanting nitrogen ions into the substrate on which the central conductor is formed. The same effect can be realized by the manufacturing method of the electronic component.

(Fourth Embodiment) FIG. 8 is a sectional view showing a structure of a wiring electrode portion of an electronic component according to a fourth embodiment of the present invention. In FIG. 8, 101 is a substrate, 102 is a wiring electrode, and the wiring electrode 102 is composed of a central conductor 103 and a coated conductor 104. Hereinafter, an electronic component and a manufacturing method thereof according to the fourth embodiment of the present invention will be described.

Similar to the first embodiment, the center conductor 103 of the wiring electrode is formed on one surface of the substrate 101 by the usual photolithography technique. A covering conductor 104 is formed so as to cover the central conductor 103. The coated conductor 104 includes the substrate 101 and the central conductor 10.
It is formed so as to cover the periphery of the center conductor except for the interface with 3.

First, a wiring electrode made of an Al alloy containing Al as a main component is formed on the substrate 101. Next, the substrate on which the wiring electrodes are formed is heat-treated in nitrogen, a reducing atmosphere, or under reduced pressure. This gives A
The additional alloying element of the central conductor 103 made of an L alloy diffuses in the central conductor and segregates on the surface layer of the central conductor.
As a result, the coated conductor 104 in which the content of the additional alloy element is higher than that of the central conductor is formed. In this embodiment, the center conductor is made of an Al alloy containing 10 wt% of Ti. For example, by performing heat treatment (300 ° C., 2 hours) under reduced pressure, T which is supersaturated in solid solution in Al is obtained.
i diffuses to the surface layer or the interface between the substrate and the central conductor,
A Ti-rich Al alloy is formed on the surface layer. On the other hand, the Ti content of the central conductor decreases, and at the same time, its resistivity also decreases. As a result, it is possible to obtain an electronic component that is comparable in electrical characteristics to the conventional one.

The additive alloy element is not particularly limited, but when heat-treated in nitrogen, nitriding of the surface of the wiring electrode can be expected, and B, Mg, Si, Sc, which forms a stable nitride at room temperature, Ti, V, Cr, Mn, Zr,
An element selected from Nb, Mo, Hf and Ta is preferable. As a result, it is possible to form a stable composite nitride of Al and an additional element, and as a result, it is possible to form a coated conductor having excellent moisture resistance.

In addition, in the electronic component of the present embodiment, it is preferable that Li is further contained as an additive alloy element of the wiring electrode. When an Al alloy is used as the central conductor, the density of wiring electrodes generally increases. In particular, when the electronic component is a surface acoustic wave device, the mass addition effect of the wiring electrode greatly affects the characteristics. Therefore, if a high-density metal is used as the wiring electrode, it becomes difficult to control the film thickness, and the manufacturing yield decreases. Invite. Li as an alloy addition element has a large effect of reducing its density, and when added to an Al alloy containing a metal that forms the stable nitride, it has a great effect of reducing the density of the wiring electrode. As a result, it becomes easy to control the film thickness during film formation, which can contribute to the improvement of the yield.

As described above, in the electronic component including the substrate and the wiring electrode formed on at least one surface of the substrate, the wiring electrode includes the central conductor and at least a part of the central conductor. An electronic component excellent in moisture resistance reliability is obtained by an electronic component formed so as to cover the central conductor and comprising a coated conductor made of an alloy containing more of the additional alloy element of the central conductor than the central conductor. You can Even when the extraction electrode has the same structure as the wiring electrode, the coating conductor has conductivity, so that the step of forming an opening in the protective film, which is conventionally necessary for forming the conductive protrusion, is eliminated. Therefore, the manufacturing cost can be suppressed.

Further, by covering the center electrode with a conductive material as in the present embodiment, even when a voltage is applied from the outside, the covering layer does not cause dielectric breakdown, so that the conventional As compared with the insulating protective film, a highly reliable electronic component can be obtained.

Further, the central conductor is preferably an alloy containing Al as a main component, and the additive alloy elements include B, Mg, Si, Sc, which form a stable nitride at room temperature.
Ti, V, Cr, Mn, Zr, Nb, Mo, Hf, Ta
It is preferable that the element is selected from This allows
By heat treatment in nitrogen, a stable and dense composite nitride film can be formed near room temperature. Further, as in the first embodiment of the present invention, it is possible to form an extremely thin covered conductor, and it is possible to obtain a good electronic component with small characteristic fluctuations without deteriorating the electrode resistance of the wiring electrode.

The resistivity of the coated conductor is preferably higher than that of the central conductor. As a result, the current distribution in the wiring electrode is concentrated on the central conductor, and it is possible to provide an electronic component without deterioration in electrical characteristics. In particular, when the electronic component is a surface acoustic wave device, since the influence of the coated conductor on the electrical characteristics is small, it is possible to provide an electronic component having excellent moisture resistance reliability without impairing the conventional electrical characteristics. . Further, since the Al-X-N-based composite nitride film (X is an additive alloy element) has a very large hardness and elastic constant,
Viscous loss of elastic waves can be reduced, which also contributes to low loss.

Although the protective film is not formed in this embodiment, since the moisture resistance is ensured by the structure of the wiring electrode, the conductive film is formed by forming a protective film which is much thinner than the conventional one. It is possible to prevent a short circuit between the wiring electrodes due to a foreign substance. Therefore, the influence of stress migration, which is a problem in the case of the conventional electronic component, can be significantly suppressed, and an electronic component with high reliability can be obtained. The protective film preferably has a thickness of 300 nm or less. As a result, it is possible to reduce characteristic deterioration to a practical level even in an electronic component using elastic vibration such as a surface acoustic wave device.

Further, in order to obtain the electronic component, in a method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate and including a central conductor and a covering conductor, at least the above The step of forming a central conductor on the substrate and the substrate on which the central conductor is formed are heat treated in nitrogen or a reducing atmosphere equivalent thereto or under reduced pressure to segregate the additive element of the central conductor to the peripheral portion. The method for manufacturing an electronic component is characterized by a step of forming a coated conductor having an alloy composition different from that of the central conductor so as to cover at least a part of the central conductor. Electronic parts can be provided.

[0098]

As is apparent from the above description of the embodiments, the electronic component of the present invention is an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate, It is characterized in that the wiring electrode includes a central conductor and a coated conductor formed so as to cover at least a part of the central conductor.

Further, in the method of manufacturing an electronic component including a substrate and a wiring electrode formed on at least one surface of the substrate to obtain the electronic component, at least a step of forming a wiring electrode on the substrate And by heat-treating the substrate on which the wiring electrode is formed in nitrogen or a reducing atmosphere similar thereto, by segregating the additive element of the wiring electrode to the peripheral portion, at least a part of the wiring electrode is formed. And a step of forming a covered conductor so as to cover the electronic part.

As a result, in an electronic component represented by a semiconductor device, a piezoelectric device such as a surface acoustic wave device, or the like in which wiring electrodes are formed on the surface of the substrate, an electronic component excellent in reliability, particularly moisture resistance, and It becomes possible to provide a manufacturing method. Further, it is possible to prevent deterioration of the electrode due to stress migration. further,
It is possible to provide a highly reliable electronic component without electrode damage even when an external voltage such as static electricity is applied.

Further, it is possible to provide an electronic component excellent in reliability, particularly moisture resistance reliability, and a manufacturing method thereof, without forming a thick protective film on the wiring electrode.

Further, by applying the manufacturing method of the present invention in the state of the collective substrate (wafer), it is possible to prevent the corrosion of the wiring electrodes due to the cutting water in the dicing step of dividing the collective substrate, and to improve the reliability. It is possible to obtain high-quality electronic components.

Further, there is no need to form an opening in the lead electrode portion, and it is possible to provide an electronic component and a manufacturing method thereof, which can simplify the manufacturing process and reduce the manufacturing cost.

Further, by providing an electronic component having excellent moisture resistance reliability, it is possible to provide an electronic component having excellent moisture resistance reliability without a hermetic seal such as a simple package structure such as a resin sealing structure. It is possible to realize cost reduction, height reduction, and size reduction of electronic parts.

[Brief description of drawings]

FIG. 1 is a sectional view showing a structure of a wiring electrode portion of an electronic component according to a first embodiment of the present invention.

FIG. 2 is a diagram showing anodic polarization curves of Al, Ta, and Ti.

FIG. 3 is a diagram showing anodic polarization curves of Al and nitrided Al.

FIG. 4 Al and Al-Ti alloy, nitriding Al
-A diagram showing an anode polarization curve of a Ti alloy

FIG. 5 is a diagram showing frequency characteristics of a surface acoustic wave filter according to a second embodiment of the present invention.

FIG. 6 is a sectional view showing a structure of a wiring electrode portion of an electronic component according to a second embodiment of the present invention.

FIG. 7 is a sectional view showing a structure of a wiring electrode portion of an electronic component according to a third embodiment of the present invention.

FIG. 8 is a sectional view showing a structure of a wiring electrode portion of an electronic component according to a fourth embodiment of the present invention.

FIG. 9 is a sectional view showing a structure of a wiring electrode portion of another electronic component according to the first embodiment of the present invention.

FIG. 10 is a sectional view showing a structure of a conventional electronic component.

FIG. 11 is a sectional view showing a structure of a wiring electrode portion of a conventional electronic component.

[Explanation of symbols]

101,201 substrate 102, 202 wiring electrodes 103 central conductor 103a First metal layer 103b Second metal layer 104 coated conductor 203 Extraction electrode 105,204 protective film 205 conductive protrusion 206 circuit board 207 Sealing resin

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Katsunori Moritoki             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Kunihiro Fujii             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd. (72) Inventor Takashi Inoue             1006 Kadoma, Kadoma-shi, Osaka Matsushita Electric             Sangyo Co., Ltd.

Claims (17)

[Claims] 1. An electronic component comprising a substrate and a wiring electrode formed on at least one surface of the substrate, wherein the wiring electrode covers a central conductor and at least a part of the central conductor. An electronic component comprising a formed coated conductor. 2. The electronic component according to claim 1, wherein the central conductor is made of Al or an alloy containing Al as a main component. 3. The center conductor has a laminated structure of a first metal layer made of Al or an alloy containing Al as a main component, and a second metal layer having a thickness smaller than that of the first metal layer. The electronic component according to claim 1, wherein: 4. The electronic component according to claim 3, wherein the second metal layer is made of Ti. 5. The center conductor is made of an alloy containing Al as a main component, and B, Mg, Si, Sc, Ti, V, Cr, M.
The electronic component according to claim 1, further comprising at least one selected from n, Zr, Nb, Mo, Hf, and Ta as an additive element. 6. The electronic component according to claim 5, wherein the central conductor is made of an alloy containing Al as a main component and further contains Li as an additional element. 7. The center conductor is made of Al or an alloy containing Al as a main component, and the coated conductor is made of a nitride or a composite nitride of the elements forming the center conductor. Electronic components listed. 8. The central conductor is made of an alloy containing Al as a main component, and the coated conductor contains at least one additional element constituting the central conductor in an amount larger than that of the central conductor. Item 1. The electronic component according to Item 1. 9. The electronic component according to claim 1, wherein the resistivity of the coated conductor is higher than the resistivity of the central conductor. 10. The electronic component according to claim 1, wherein the electronic component is a surface acoustic wave device. 11. The electronic component according to claim 1, further comprising a protective film on the wiring electrode. 12. The electronic component according to claim 11, wherein the protective film has a thickness of 300 nm or less. 13. A method of manufacturing an electronic component, comprising: a substrate; and a wiring electrode formed on at least one surface of the substrate and comprising a central conductor and a coated conductor, at least:
A step of forming a central conductor on the substrate, and a substrate on which the central conductor is formed are heat-treated in nitrogen to nitride at least a peripheral portion of the central conductor, thereby forming a coated conductor made of a metal nitride film. The manufacturing method of the electronic component characterized by the above-mentioned. 14. A method of manufacturing an electronic component, comprising: a substrate; and a wiring electrode formed on at least one surface of the substrate, the wiring electrode including a central conductor and a coated conductor,
The step of forming a central conductor on the substrate and the substrate on which the central conductor is formed are heat-treated in nitrogen or a reducing atmosphere equivalent thereto or under reduced pressure to segregate the additive element of the central conductor to the peripheral portion. By covering at least a part of the central conductor,
And a step of forming a coated conductor having an alloy composition different from that of the central conductor. 15. The method of manufacturing an electronic component according to claim 13, further comprising the step of irradiating a laser in the step of forming the coated conductor. 16. A method of manufacturing an electronic component, comprising: a substrate; and a wiring electrode formed on at least one surface of the substrate and comprising a central conductor and a coated conductor, at least:
Forming a central conductor on the substrate, and implanting nitrogen ions into the substrate on which the central conductor is formed to nitride at least the peripheral portion of the central conductor to form a coated conductor made of a metal nitride film. A method for manufacturing an electronic component, comprising: 17. The method for manufacturing an electronic component according to claim 13, wherein the electronic component is a surface acoustic wave device.