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JP2003090685A - Heat treatment furnace for functional film material formed on substrate - Google Patents

Heat treatment furnace for functional film material formed on substrate

Info

Publication number
JP2003090685A
JP2003090685A JP2002182780A JP2002182780A JP2003090685A JP 2003090685 A JP2003090685 A JP 2003090685A JP 2002182780 A JP2002182780 A JP 2002182780A JP 2002182780 A JP2002182780 A JP 2002182780A JP 2003090685 A JP2003090685 A JP 2003090685A
Authority
JP
Japan
Prior art keywords
substrate
heat treatment
treatment furnace
functional film
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002182780A
Other languages
Japanese (ja)
Inventor
Michiro Aoki
道郎 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2002182780A priority Critical patent/JP2003090685A/en
Publication of JP2003090685A publication Critical patent/JP2003090685A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Tunnel Furnaces (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a heat treatment furnace for a functional film material formed on a substrate, which is capable of reducing an energy cost required for heat treatment and permitting quick temperature rise and temperature fall while requiring no trouble for maintenance. SOLUTION: The heat treatment furnace employed for the heat treatment of the functional film material formed on the substrate employs a walking beam as the transfer means of the substrate 1 in the furnace.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】 本発明は、多結晶シリコン
太陽電池基板上に形成された電極ペーストのような基板
上に形成された機能膜材料を熱処理するために使用され
る熱処理炉に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment furnace used for heat treating a functional film material formed on a substrate such as an electrode paste formed on a polycrystalline silicon solar cell substrate.

【0002】[0002]

【従来の技術】 多結晶シリコン太陽電池基板の製造に
おいては、基板上に電極ペーストを所定のパターンで印
刷形成した後、当該電極ペーストの熱処理を行う必要が
ある。従来、この熱処理は、メッシュベルトコンベアを
搬送手段として有する熱処理炉を用い、基板をメッシュ
ベルト上に載置した状態で、炉内を連続的又は間欠的に
移動させながら電気ヒーターで800〜900℃程度の
温度まで加熱した後、室温まで冷却するという工程で行
われている。
2. Description of the Related Art In manufacturing a polycrystalline silicon solar cell substrate, it is necessary to print an electrode paste on the substrate in a predetermined pattern and then heat-treat the electrode paste. Conventionally, this heat treatment uses a heat treatment furnace having a mesh belt conveyer as a transporting means, and a substrate is placed on the mesh belt, and an electric heater is used to continuously or intermittently move the inside of the furnace at 800 to 900 ° C. It is carried out in a process of heating to about a temperature and then cooling to room temperature.

【0003】[0003]

【発明が解決しようとする課題】 しかしながら、メッ
シュベルトコンベアを搬送手段とする熱処理炉において
は、基板に対して著しく大きな熱容量を有するメッシュ
ベルトを基板と同時に昇温しなければならないため、熱
処理に要するエネルギーコストが高くなるという問題が
あった。
However, in a heat treatment furnace using a mesh belt conveyor as a conveyance means, the mesh belt having a remarkably large heat capacity with respect to the substrate must be heated at the same time as the substrate. There was a problem that the energy cost was high.

【0004】 また、多結晶シリコン太陽電池基板に形
成された電極ペーストの熱処理では、昇温及び降温を迅
速に行うことが製品特性上優位であることが分かってお
り、具体的には、基板を室温から800〜900℃程度
の温度まで1分以内に加熱し、冷却を含めた全熱処理工
程を3分程度で完了することが理想とされているが、現
行の電気ヒーターの性能とメッシュベルトの熱容量を考
慮すると、そのような迅速な熱処理を実現することは非
常に困難である。
In addition, in heat treatment of an electrode paste formed on a polycrystalline silicon solar cell substrate, it has been found that rapid heating and cooling is advantageous in terms of product characteristics. It is ideal to heat from room temperature to a temperature of about 800 to 900 ° C within 1 minute and complete the entire heat treatment process including cooling in about 3 minutes. However, the performance of the current electric heater and mesh belt Considering the heat capacity, it is very difficult to realize such a rapid heat treatment.

【0005】 更に、メッシュベルトコンベアは、使用
時間の経過とともに徐々にメッシュベルト自体に伸びが
生じてくるため、定期的にベルトの伸びを補正するため
のメンテナンスが必要になるという問題もあった。
Further, in the mesh belt conveyor, since the mesh belt itself gradually expands with the lapse of use time, there is a problem that maintenance for periodically correcting the expansion of the belt is required.

【0006】 本発明は、このような従来の事情に鑑み
てなされたものであり、その目的とするところは、熱処
理に要するエネルギーコストを低減できるとともに、迅
速な昇温及び降温が可能で、メンテナンスの手間もかか
らないような基板上に形成された機能膜材料の熱処理炉
を提供することにある。
The present invention has been made in view of the above conventional circumstances, and an object of the present invention is to reduce energy cost required for heat treatment, and to rapidly raise and lower the temperature for maintenance. Another object of the present invention is to provide a heat treatment furnace for a functional film material formed on a substrate that does not require any trouble.

【0007】[0007]

【課題を解決するための手段】 本発明によれば、基板
上に形成された機能膜材料を熱処理するために使用され
る熱処理炉であって、炉内における基板の搬送手段とし
てウォーキングビームを用いることを特徴とする基板上
に形成された機能膜材料の熱処理炉(第一発明)、が提
供される。
According to the present invention, there is provided a heat treatment furnace used for heat treating a functional film material formed on a substrate, wherein a walking beam is used as a means for transporting the substrate in the furnace. A heat treatment furnace (first invention) for a functional film material formed on a substrate is provided.

【0008】 また、本発明によれば、基板上に形成さ
れた機能膜材料を熱処理するために使用される熱処理炉
であって、炉内における基板の搬送手段としてローラー
を用いることを特徴とする基板上に形成された機能膜材
料の熱処理炉(第二発明)、が提供される。
Further, according to the present invention, a heat treatment furnace used for heat-treating a functional film material formed on a substrate, characterized in that a roller is used as a means for transporting the substrate in the furnace. A heat treatment furnace (second invention) for a functional film material formed on a substrate is provided.

【0009】[0009]

【発明の実施の形態】 前記のとおり、第一発明に係る
熱処理炉は、炉内における基板の搬送手段としてウォー
キングビームを用いることをその主要な特徴としてい
る。ウォーキングビームは、炉内で製品を搬送する際、
移動ビームが製品を載せて所定位置まで前進し、製品を
降ろした後、元の位置に戻るという動きを繰り返すこと
で製品を移動させるものである。
BEST MODE FOR CARRYING OUT THE INVENTION As described above, the heat treatment furnace according to the first invention is characterized mainly in that a walking beam is used as a substrate transfer means in the furnace. The walking beam is used to convey products in the furnace.
The moving beam places the product, advances it to a predetermined position, lowers the product, and then returns to the original position to repeat the movement to move the product.

【0010】 従来のメッシュベルトコンベアを搬送手
段に用いた基板の電極ペースト熱処理炉では、基板の移
動とともにメッシュベルト自体も炉内を周回移動してい
たため、基板の20〜30倍もの大きな熱容量を持つメ
ッシュベルトを、常に基板と同時に昇温及び降温する必
要があったが、第一発明に係る熱処理炉では、搬送手段
であるウォーキングビームが狭い範囲で前後に往復運動
するものの、基本的には炉内のほぼ同位置に留まるの
で、ウォーキングビームが一旦所定の温度に達すれば、
その後はウォーキングビームの当該温度を保持できるだ
けの熱量と基板自体を所定温度にするために必要な熱量
しか要しない。
In a conventional substrate electrode paste heat treatment furnace using a conventional mesh belt conveyor as a conveying means, the mesh belt itself moves around the furnace as the substrate moves, and thus has a heat capacity as large as 20 to 30 times that of the substrate. Although it was necessary to always raise and lower the temperature of the mesh belt at the same time as the substrate, in the heat treatment furnace according to the first aspect of the invention, the walking beam, which is the conveying means, reciprocates back and forth within a narrow range. Since it stays at almost the same position inside, once the walking beam reaches the predetermined temperature,
After that, only the amount of heat required to maintain the temperature of the walking beam and the amount of heat required to bring the substrate itself to a predetermined temperature are required.

【0011】 このため第一発明に係る熱処理炉は、従
来の熱処理炉に比して、基板上に形成された電極ペース
ト等の機能膜材料の熱処理に要するエネルギーコストを
大幅に低減できるとともに、基板の迅速な昇温及び降温
が可能となる。
Therefore, the heat treatment furnace according to the first invention can significantly reduce the energy cost required for heat treatment of the functional film material such as the electrode paste formed on the substrate, as compared with the conventional heat treatment furnace, and the substrate It is possible to rapidly raise and lower the temperature.

【0012】 図1は、第一発明に係る熱処理炉におけ
る搬送手段(ウォーキングビーム)の一実施形態を示す
概要図である。本例において、ウォーキングビームは、
炉内に固定された固定ビーム3と、所定の範囲で上下及
び前後に移動する移動ビーム5とからなり、基板1の静
止時には、図1(a)に示すように移動ビーム5が固定
ビーム3より下方に降下して、固定ビーム3のみによっ
て基板1が支持された状態となっている。
FIG. 1 is a schematic diagram showing an embodiment of a transfer means (walking beam) in a heat treatment furnace according to the first invention. In this example, the walking beam is
It consists of a fixed beam 3 fixed in the furnace and a moving beam 5 that moves up and down and back and forth within a predetermined range. When the substrate 1 is stationary, the moving beam 5 is fixed as shown in FIG. The substrate 1 is further lowered and the substrate 1 is supported only by the fixed beam 3.

【0013】 そして、基板1の搬送時には、図1
(b)にように移動ビーム5が固定ビーム3より上方に
まで上昇して、基板1を固定ビーム3から受け取るとと
もに、基板1を載せて所定位置まで前進する。所定位置
まで前進した移動ビーム5は、再び下降しながら移動先
の固定ビーム3に基板1を受け渡し、元の位置まで後進
して次の搬送に備える。
Then, when the substrate 1 is transferred, as shown in FIG.
As shown in (b), the moving beam 5 rises above the fixed beam 3 to receive the substrate 1 from the fixed beam 3, and the substrate 1 is placed and moved forward to a predetermined position. The moving beam 5 that has advanced to a predetermined position transfers the substrate 1 to the fixed beam 3 that is the moving destination while descending again, and moves backward to the original position to prepare for the next conveyance.

【0014】 なお、第一発明においては、図1に示す
ようにウォーキングビーム(固定ビーム3及び移動ビー
ム5)上に基板1の特定位置にのみ接触する支持ピン
7、9を設けることが好ましい。ここで、基板1の特定
位置とは、例えば熱処理すべき電極ペーストが形成され
ていない基板1の外周近傍の位置であり、このような位
置でのみウォーキングビームが基板と接触するようにす
ることにより、ウォーキングビームが基板の熱処理に与
える影響を極力排除することができる。
In the first invention, as shown in FIG. 1, it is preferable to provide support pins 7 and 9 on the walking beam (the fixed beam 3 and the movable beam 5) that come into contact with only a specific position of the substrate 1. Here, the specific position of the substrate 1 is, for example, a position in the vicinity of the outer periphery of the substrate 1 on which the electrode paste to be heat-treated is not formed, and the walking beam is brought into contact with the substrate only at such a position. The influence of the walking beam on the heat treatment of the substrate can be eliminated as much as possible.

【0015】 ウォーキングビームの材質としては、高
強度の炭化珪素系セラミックスを用いることが好まし
く、特にSiC粉末を主原料とする成形体に金属Siを
含浸させながら焼成して得られるSi含浸SiCを用い
ることが好ましい。また、支持ピンの材質としては、炉
内温度や加工性を考慮して、鉄クロムアルミニウム合金
やニッケルクロム合金等の耐熱金属を使用することが好
ましい。
As a material for the walking beam, it is preferable to use high-strength silicon carbide ceramics. In particular, Si-impregnated SiC obtained by firing a molded body whose main raw material is SiC powder while impregnating it with metallic Si is used. It is preferable. Further, as the material of the support pin, it is preferable to use a heat-resistant metal such as an iron-chromium-aluminum alloy or a nickel-chromium alloy in consideration of the furnace temperature and workability.

【0016】 第二発明に係る熱処理炉は、炉内におけ
る基板の搬送手段としてローラーを用いることをその主
要な特徴としている。この炉内搬送手段としてのローラ
ーは、その軸方向が製品の搬送方向と直交するようにし
て多数平行に配置され、ローラーに連結された駆動装置
により回転が与えられることによって、ローラー上に載
せられた製品を順次移動させるものである。
The heat treatment furnace according to the second invention is characterized mainly in that a roller is used as a means for transporting the substrate in the furnace. The rollers as the in-furnace conveying means are arranged in parallel so that the axial direction thereof is orthogonal to the conveying direction of the product, and the rollers are placed on the rollers by being rotated by a driving device connected to the rollers. Products are sequentially moved.

【0017】 前述のように、従来のメッシュベルトコ
ンベアを搬送手段に用いた基板の電極ペースト熱処理炉
では、大きな熱容量を持つメッシュベルトを、常に基板
と同時に昇温及び降温する必要があったが、第二発明に
係る熱処理炉では、搬送手段であるローラーは常に同位
置で回転するだけで、ローラー自体が基板とともに炉内
を移動することはないので、ローラーが一旦所定の温度
に達すれば、その後はローラーの当該温度を保持できる
だけの熱量と基板自体を所定温度にするために必要な熱
量しか要しない。
As described above, in the conventional substrate electrode paste heat treatment furnace using the conventional mesh belt conveyor as the transport means, it is necessary to constantly raise and lower the temperature of the mesh belt having a large heat capacity simultaneously with the substrate. In the heat treatment furnace according to the second aspect of the present invention, the roller, which is the conveying means, always rotates at the same position, and the roller itself does not move in the furnace together with the substrate, so once the roller reaches a predetermined temperature, Requires only the amount of heat required to maintain the temperature of the roller and the amount of heat required to bring the substrate itself to a predetermined temperature.

【0018】 このため第二発明に係る熱処理炉も前記
第一発明に係る熱処理炉と同様に、従来の熱処理炉に比
して、基板上に形成された電極ペースト等の機能膜材料
の熱処理に要するエネルギーコストを大幅に低減できる
とともに、基板の迅速な昇温及び降温が可能となる。
Therefore, similarly to the heat treatment furnace according to the first aspect of the present invention, the heat treatment furnace according to the second aspect of the present invention can heat the functional film material such as the electrode paste formed on the substrate as compared with the conventional heat treatment oven. The required energy cost can be significantly reduced, and the temperature of the substrate can be raised and lowered quickly.

【0019】 図2は、第二発明に係る熱処理炉におけ
る搬送手段(ローラー)の一実施形態を示す概要図であ
る。前記のとおり、ローラー11は、その軸方向が基板
1の搬送方向と直交するようにして炉内下部に多数平行
に配置され、ローラー11に連結された駆動装置(図示
せず)により回転が与えられることによって、ローラー
11上に載せられた基板1を順次移動させる。
FIG. 2 is a schematic view showing an embodiment of a conveying means (rollers) in the heat treatment furnace according to the second invention. As described above, the rollers 11 are arranged in parallel in the lower part of the furnace so that the axial direction thereof is orthogonal to the transport direction of the substrate 1, and are rotated by a driving device (not shown) connected to the rollers 11. As a result, the substrate 1 placed on the roller 11 is sequentially moved.

【0020】 なお、第二発明においては、図2に示す
ように、ローラー11に、ローラー本体13の径よりも
大径の支持部15を所定間隔で設け、ローラー11がそ
の支持部15によって基板1の特定位置にのみ接触する
ようにすることが好ましい。ここで、基板1の特定位置
とは、前記第一発明の場合と同様、例えば熱処理すべき
電極ペースト等の機能膜材料が形成されていない基板1
の外周近傍の位置であり、このような位置でのみローラ
ーが基板と接触するようにすることにより、ローラーが
基板の熱処理に与える影響を極力排除することができ
る。
In the second invention, as shown in FIG. 2, the roller 11 is provided with the support portions 15 having a diameter larger than the diameter of the roller body 13 at predetermined intervals, and the roller 11 uses the support portions 15 to form a substrate. It is preferable to contact only one specific position. Here, the specific position of the substrate 1 is, as in the case of the first invention, for example, the substrate 1 on which a functional film material such as an electrode paste to be heat-treated is not formed.
It is a position in the vicinity of the outer periphery of the roller, and by making the roller contact the substrate only at such a position, the influence of the roller on the heat treatment of the substrate can be eliminated as much as possible.

【0021】 また、図2に示すように、支持部15上
には、支持部15の径よりも更に大径の仕切り部17を
設け、支持部15により支持された隣接する基板1同士
が接触するのを防止するようにしてもよい。ローラーの
材質としては、前記第一発明におけるウォーキングビー
ムと同様に、炭化珪素系セラミックス、特にSi含浸S
iCを用いることが好ましい。
Further, as shown in FIG. 2, a partition portion 17 having a diameter larger than the diameter of the support portion 15 is provided on the support portion 15, and adjacent substrates 1 supported by the support portion 15 are in contact with each other. This may be prevented. As the material of the roller, similar to the walking beam in the first invention, silicon carbide ceramics, particularly Si-impregnated S
It is preferable to use iC.

【0022】 本発明の熱処理炉は、多結晶シリコン太
陽電池基板上に形成された電極ペーストを熱処理するた
め熱処理炉として特に好適に使用できるが、当該熱処理
炉の用途はそれにのみ限定されるものではなく、基板上
に塗布、印刷等の各種手段により形成され、所定の機能
を発揮させるために熱処理を施すことを必要とする様々
な機能膜材料の熱処理に広く用いることが可能である。
The heat treatment furnace of the present invention can be particularly preferably used as a heat treatment furnace for heat treating an electrode paste formed on a polycrystalline silicon solar cell substrate, but the use of the heat treatment furnace is not limited to this. Instead, it can be widely used for heat treatment of various functional film materials which are formed on a substrate by various means such as coating and printing and need to be heat-treated in order to exert a predetermined function.

【0023】[0023]

【実施例】 以下、本発明を実施例に基づいて更に詳細
に説明するが、本発明はこれらの実施例に限定されるも
のではない。
EXAMPLES Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.

【0024】 図1に示すようなウォーキングビームを
搬送手段とする熱処理炉(実施例)と、従来のメッシュ
ベルトコンベアを搬送手段とする熱処理炉(比較例)と
を用い、多結晶シリコン太陽電池基板を室温から約85
0℃に昇温するのに要する時間と、昇温後の当該基板を
再び室温に冷却するまでに要する全熱処理工程の所要時
間を調べた。なお、炉内の加熱手段及び冷却手段には、
同一の電気ヒーター及び水冷ジャケットを使用した。
Using a heat treatment furnace having a walking beam as a conveyance means (Example) and a heat treatment furnace having a conventional mesh belt conveyor as a conveyance means (Comparative Example) as shown in FIG. 1, a polycrystalline silicon solar cell substrate is used. From room temperature to about 85
The time required for raising the temperature to 0 ° C. and the time required for all the heat treatment steps required to cool the substrate after the temperature rise to room temperature again were examined. In addition, the heating means and cooling means in the furnace,
The same electric heater and water cooling jacket were used.

【0025】 結果は図3のグラフに示すとおりであ
り、比較例の熱処理炉では基板を約850℃に昇温する
のに1分半程度の時間を要し、冷却を含めた全熱処理工
程にも7分以上の時間を要した。これに対し、実施例の
熱処理炉では1分以内に基板温度が850℃に達し、冷
却を含めた全熱処理工程も約3分という極めて短い時間
で完了した。
The results are shown in the graph of FIG. 3. In the heat treatment furnace of the comparative example, it took about 1 minute and a half to heat the substrate to about 850 ° C., and the whole heat treatment process including cooling was performed. It took more than 7 minutes. On the other hand, in the heat treatment furnace of the example, the substrate temperature reached 850 ° C. within 1 minute, and the entire heat treatment process including cooling was completed in an extremely short time of about 3 minutes.

【0026】[0026]

【発明の効果】 以上説明したように、本発明に係る基
板上に形成された機能膜材料の熱処理炉は、従来のメッ
シュベルトコンベアを搬送手段とする熱処理炉に比し
て、熱処理に要するエネルギーコストを大幅に低減する
ことができる。また、迅速な昇温及び降温が可能なの
で、より製品特性に優れた基板を製造することができ
る。更に、メッシュベルトの伸びの補正のような手間の
かかるメンテナンスが不要となる。
As described above, the heat treatment furnace for the functional film material formed on the substrate according to the present invention requires less energy for heat treatment than a conventional heat treatment furnace using a mesh belt conveyor as a transport means. The cost can be reduced significantly. Further, since it is possible to raise and lower the temperature quickly, it is possible to manufacture a substrate having more excellent product characteristics. Further, troublesome maintenance such as correction of expansion of the mesh belt becomes unnecessary.

【図面の簡単な説明】[Brief description of drawings]

【図1】 第一発明に係る熱処理炉における搬送手段
(ウォーキングビーム)の一実施形態を示す概要図で、
(a)は基板の静止時の状態、(b)は基板の搬送時の
状態をそれぞれ示している。
FIG. 1 is a schematic view showing an embodiment of a transfer means (walking beam) in a heat treatment furnace according to the first invention,
(A) shows the state when the substrate is stationary, and (b) shows the state when the substrate is transported.

【図2】 第二発明に係る熱処理炉における搬送手段
(ローラー)の一実施形態を示す概要図である。
FIG. 2 is a schematic view showing an embodiment of a conveying means (rollers) in the heat treatment furnace according to the second invention.

【図3】 実施例における基板の温度変化と熱処理時間
との関係を示すグラフである。
FIG. 3 is a graph showing the relationship between the temperature change of the substrate and the heat treatment time in the example.

【符号の説明】[Explanation of symbols]

1…基板、3…固定ビーム、5…移動ビーム、7…支持
ピン、9…支持ピン、11…ローラー、13…ローラー
本体、15…支持部、17…仕切り部。
1 ... Substrate, 3 ... Fixed beam, 5 ... Moving beam, 7 ... Support pin, 9 ... Support pin, 11 ... Roller, 13 ... Roller body, 15 ... Support part, 17 ... Partition part.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 基板上に形成された機能膜材料を熱処理
するために使用される熱処理炉であって、 炉内における基板の搬送手段としてウォーキングビーム
を用いることを特徴とする基板上に形成された機能膜材
料の熱処理炉。
1. A heat treatment furnace used for heat-treating a functional film material formed on a substrate, characterized in that a walking beam is used as a means for conveying the substrate in the furnace. Heat treatment furnace for functional film materials.
【請求項2】 多結晶シリコン太陽電池基板上に形成さ
れた電極ペーストを熱処理するために使用される請求項
1記載の熱処理炉。
2. The heat treatment furnace according to claim 1, wherein the heat treatment furnace is used for heat treating an electrode paste formed on a polycrystalline silicon solar cell substrate.
【請求項3】 前記ウォーキングビーム上に基板の特定
位置にのみ接触する支持ピンを設けた請求項1又は2に
記載の熱処理炉。
3. The heat treatment furnace according to claim 1, wherein support pins are provided on the walking beam so as to contact only a specific position of the substrate.
【請求項4】 基板上に形成された機能膜材料を熱処理
するために使用される熱処理炉であって、 炉内における基板の搬送手段としてローラーを用いるこ
とを特徴とする基板上に形成された機能膜材料の熱処理
炉。
4. A heat treatment furnace used for heat-treating a functional film material formed on a substrate, characterized in that a roller is used as a means for conveying the substrate in the furnace. Heat treatment furnace for functional film materials.
【請求項5】 多結晶シリコン太陽電池基板上に形成さ
れた電極ペーストを熱処理するために使用される請求項
4記載の熱処理炉。
5. The heat treatment furnace according to claim 4, wherein the heat treatment furnace is used for heat treating an electrode paste formed on a polycrystalline silicon solar cell substrate.
【請求項6】 前記ローラーに、ローラー本体の径より
も大径の支持部を所定間隔で設け、前記ローラーが前記
支持部によって基板の特定位置にのみ接触するようにし
た請求項4又は5に記載の熱処理炉。
6. The support according to claim 4, wherein the rollers are provided with support portions having a diameter larger than the diameter of the roller body at predetermined intervals, and the rollers are brought into contact with a specific position of the substrate by the support portions. The heat treatment furnace described.
JP2002182780A 2001-07-13 2002-06-24 Heat treatment furnace for functional film material formed on substrate Pending JP2003090685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002182780A JP2003090685A (en) 2001-07-13 2002-06-24 Heat treatment furnace for functional film material formed on substrate

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001213237 2001-07-13
JP2001-213237 2001-07-13
JP2002182780A JP2003090685A (en) 2001-07-13 2002-06-24 Heat treatment furnace for functional film material formed on substrate

Publications (1)

Publication Number Publication Date
JP2003090685A true JP2003090685A (en) 2003-03-28

Family

ID=26618663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002182780A Pending JP2003090685A (en) 2001-07-13 2002-06-24 Heat treatment furnace for functional film material formed on substrate

Country Status (1)

Country Link
JP (1) JP2003090685A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006132921A (en) * 2004-10-04 2006-05-25 Ngk Insulators Ltd Continuous heat treatment furnace
JP2009238991A (en) * 2008-03-27 2009-10-15 Shin Etsu Chem Co Ltd Heat treatment apparatus
CN102054729A (en) * 2010-10-29 2011-05-11 常州亿晶光电科技有限公司 Five tube-type silicon chip conveying device
WO2022049818A1 (en) * 2020-09-07 2022-03-10 日本碍子株式会社 Refractory material

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006132921A (en) * 2004-10-04 2006-05-25 Ngk Insulators Ltd Continuous heat treatment furnace
JP2009238991A (en) * 2008-03-27 2009-10-15 Shin Etsu Chem Co Ltd Heat treatment apparatus
CN102054729A (en) * 2010-10-29 2011-05-11 常州亿晶光电科技有限公司 Five tube-type silicon chip conveying device
WO2022049818A1 (en) * 2020-09-07 2022-03-10 日本碍子株式会社 Refractory material
JPWO2022049818A1 (en) * 2020-09-07 2022-03-10
KR20220033050A (en) * 2020-09-07 2022-03-15 엔지케이 인슐레이터 엘티디 refractory
JP7167367B2 (en) 2020-09-07 2022-11-08 日本碍子株式会社 refractory material
CN115956064A (en) * 2020-09-07 2023-04-11 日本碍子株式会社 refractory material
TWI821649B (en) * 2020-09-07 2023-11-11 日商日本碍子股份有限公司 Refractory materials
KR102733915B1 (en) 2020-09-07 2024-11-25 엔지케이 인슐레이터 엘티디 Refractory

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