JP2003086736A - Semiconductor device and substrate therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To properly secure an electrical connection between a semiconductor element and a semiconductor device substrate even when a semiconductor element having a different arrangement of electrode terminals or an electrode terminal is misaligned in a manufacturing process. And can be provided as a highly reliable semiconductor device. A wiring pattern (14) is provided on one surface of a resin substrate (12) with a protective film (20) except for required parts such as a bonding portion (16) and a land portion (18), and an electrode terminal is formed on the other surface of the resin substrate (12). A semiconductor device substrate provided with an opening for exposing the electrode terminals 30a and 30b disposed on the electrode terminal forming surface when the semiconductor element 28 is mounted by bonding the surfaces to each other; The bonding terminal is provided thicker than the loop portion of the bonding wire 32 for connecting the electrode terminal of the semiconductor element 28 and the bonding portion by wire bonding.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device substrate and a semiconductor device.

[0002]

2. Description of the Related Art As a BGA (Ball Grid Array) type semiconductor device formed to have a size substantially equal to that of a semiconductor element, a film substrate is bonded to the electrode terminal formation surface of the semiconductor element, and a beam is provided on the film substrate. There is a product in which a lead is bonded to an electrode terminal of a semiconductor element and an exposed portion of the lead or the like is resin-sealed. For example, Japanese Patent Laid-Open No.
The semiconductor device described in JP-A-223805 is an example in which a semiconductor element in which electrode terminals are arranged on the peripheral portion of the electrode terminal formation surface (peripheral type) is used, and a film substrate is formed on the electrode terminal formation surface of the semiconductor element. It is bonded and the electrode terminal and the beam lead are joined.

The semiconductor device described in JP-A-2001-118966 is a product that uses a (center row type) semiconductor element in which electrode terminals are arranged in the center of the electrode terminal forming surface. A film substrate is bonded to the electrode terminal formation surface, and the electrode terminal of the semiconductor element and the beam lead are bonded. The semiconductor device described in JP-A-2001-85564 is a product (fan-out type) in which a semiconductor element is mounted on a film substrate formed to be larger than the plane dimension of the semiconductor element, and the semiconductor device is provided on the film substrate. The beam lead is joined to the electrode terminal of the semiconductor element, and the joint between the lead and the electrode terminal and the outer periphery of the semiconductor element are resin-sealed over the extended portion of the film substrate extending outward from the outer peripheral edge of the semiconductor element. Is formed.

[0004]

In the method of manufacturing a semiconductor device using the above-mentioned film substrate, the film substrate is bonded to the electrode terminal formation surface of the semiconductor element so that the beam lead is located above each electrode terminal. Then, the beam lead is cut off using a bonding tool, and while the beam lead is bent so as to be curved as it is, the separated end of the lead is pressed against the electrode terminal to be joined.

Therefore, in the conventional method of manufacturing a semiconductor device using a film substrate having a beam lead formed thereon, it is necessary that the beam leads and the electrode terminals of the semiconductor element have a one-to-one correspondence. The positions must also match exactly. Therefore, it is necessary to prepare a different film substrate for each product for semiconductor elements having different arrangements of electrode terminals, and it is not possible to use a film substrate commonly for semiconductor elements having different arrangements of electrode terminals. .

Further, when the film substrate is bonded to the semiconductor element, if it is displaced, the beam leads may not reach the electrode terminals or the leads may be significantly deformed. Further, in the lead bonding, the lead may be broken or deformed midway when the beam lead is separated, so that there is a problem that the bonding cannot be performed accurately. Further, in order to perform lead bonding, the substrate needs to be configured to support the beam lead in a hollow position. Therefore, conventionally, a film substrate is often used as a substrate to be used by being adhered to a semiconductor element, which results in a low manufacturing cost. There was also the problem of this.

Therefore, the present invention has been made to solve these problems, and an object of the present invention is to slightly change the arrangement of the electrode terminals of the semiconductor element or to slightly shift the position to form a semiconductor element. Provided are a semiconductor device substrate and a semiconductor device, in which electrical connection between a semiconductor element and a semiconductor device substrate is ensured even when the substrates are joined, manufacturing is easy, and manufacturing cost can be reduced. It is in.

[0008]

In order to achieve the above object, the present invention has the following constitution. That is, a wiring pattern is provided on one surface of a resin substrate except a required portion such as a bonding portion and a land portion with a protective film, and an electrode terminal forming surface is bonded to the other surface of the resin substrate to form a semiconductor element. A substrate for a semiconductor device provided with an opening hole for exposing an electrode terminal arranged on an electrode terminal formation surface when mounted, wherein the protective film wire-bonds the electrode terminal of the semiconductor element and the bonding portion. It is characterized in that it is provided thicker than the height of the loop portion of the bonding wire connected by.

Further, a wiring pattern is formed on one surface of the tape substrate such that required portions such as bonding portions and lands are exposed on the other surface side, and an electrode terminal forming surface is adhered to one surface of the tape substrate. A semiconductor device substrate having an opening for exposing an electrode terminal disposed on an electrode terminal formation surface when a semiconductor element is mounted, wherein the tape substrate is:
It is characterized in that it is provided thicker than the height of the loop portion of the bonding wire that connects the electrode terminal of the semiconductor element and the bonding portion by wire bonding.

A semiconductor element is mounted by adhering an electrode terminal forming surface to the other surface of the resin substrate of the semiconductor device substrate, and the electrode terminal on the electrode terminal forming surface and the bonding portion of the wiring pattern are wire bonded. A semiconductor device electrically connected by the above, wherein an external connection terminal is joined to the land portion, wherein the bonding portion including the bonding wire and the electrode terminal, and the outer peripheral side surface of the semiconductor element are made of resin. It is characterized by being sealed. Further, a semiconductor element is mounted by adhering an electrode terminal forming surface to one surface of the tape substrate of the semiconductor device substrate, and the electrode terminal on the electrode terminal forming surface and the bonding portion of the wiring pattern are electrically connected by wire bonding. A semiconductor device in which an external connection terminal is joined to the land portion, the connection portion between the bonding portion including the bonding wire and the electrode terminal, and the outer peripheral side surface of the semiconductor element are sealed with resin. It is characterized by

A plurality of semiconductor elements are stacked and mounted on the semiconductor device substrate with the electrode terminal forming surface in the same direction, and each semiconductor element and the wiring pattern of the semiconductor device substrate are electrically bonded by wire bonding. It is connected to. Further, the semiconductor element is mounted on the semiconductor device substrate via a buffer layer.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. (First Embodiment) FIGS. 1 (a) and 1 (b) are a plan view and a sectional view showing the configuration of a first embodiment of a semiconductor device substrate 10 according to the present invention. In FIG. 1 (b), 12
Is a resin substrate made of a resin material such as glass / epoxy or polyimide. Reference numeral 14 is a wiring pattern formed on one surface of the resin substrate 12, 16 is a bonding portion formed on the wiring pattern 14, and 18 is a land portion. Reference numeral 19 is an adhesive layer. As shown in FIG. 1A, one surface of the semiconductor device substrate 10 is covered with a protective film 20 such as a solder resist except for the bonding portion 16 and the land portion 18.

For the sake of description, the semiconductor device substrate 10 shown in FIG. 1 is a semiconductor device having electrode terminals formed at the central portion and the peripheral portion of the electrode terminal forming surface, that is, a type in which center row type and peripheral type are mixed. It is shown that the semiconductor device of FIG. Reference numeral 22 denotes an opening hole provided corresponding to the electrode terminal arranged in the central portion of the electrode terminal formation surface of the semiconductor element, and 24 corresponds to the arrangement of the electrode terminals arranged on the four sides of the electrode terminal formation surface. It is an opening hole provided. The protective film 20 is provided by exposing the peripheries of these opening holes 22 and 24 in a rectangular shape. The broken line C indicates the mounting area of the semiconductor element.

The semiconductor device substrate 10 can be formed by a usual wiring board manufacturing method using a single-sided copper-bonded resin substrate in which a copper foil is adhered to one surface of a resin substrate 12 with an adhesive 19. That is, the opening hole 2 is formed in the single-sided copper-clad substrate.
2, 24 are penetrated, the surface of the copper foil is covered with a photosensitive resist, and the photosensitive resist is exposed to a predetermined pattern and developed to form a resist pattern which covers only the portion where the wiring pattern 14 is formed. Next, the wiring pattern 14 is formed by etching the copper foil using the resist pattern as a mask, and the bonding portion 16 and the land portion 18 of the wiring pattern 14 are plated with gold. Finally, one surface of the resin substrate 12 is covered with a solder resist to expose required portions such as the bonding portion 16 and the land portion 18 to form the protective film 20. A film resist can be used as the solder resist.

As described above, the semiconductor device substrate 10 can be manufactured by a conventional wiring board manufacturing method using a resin substrate as a base material. In the semiconductor device according to the present invention, a semiconductor element is mounted on the semiconductor device substrate 10 by a wire bonding method. Therefore, the semiconductor device substrate 10
In the manufacturing of, the protective film 20 must be thicker than the height of the loop portion of the bonding wire. The height of the loop portion with respect to the surface of the bonding portion 16 is about 50 to 100 μm. Therefore,
The thickness of the protective film 20 needs to be about 50 to 100 μm. The solder resist may be coated a plurality of times to secure a required thickness, or a film-shaped solder resist material formed to have a predetermined thickness may be used.

2 and 3 show manufacturing steps for manufacturing a semiconductor device using the semiconductor device substrate 10. 2A shows the semiconductor device substrate 10, and FIG. 2B shows a surface of the semiconductor device substrate 10 opposite to the surface on which the wiring patterns 14 are formed, that is, a back surface of the resin substrate 12 as a buffer layer. The elastomer layer 26 of FIG. Elastomer layer 2
6 can be formed by adhering an elastomer film having a predetermined flexibility to the resin substrate 12. FIG. 2C shows a state in which the semiconductor element 28 is bonded to the semiconductor device substrate 10. The semiconductor element 28 is bonded so that the electrode terminal forming surface faces the elastomer layer 26. 30a and 30b are electrode terminals. Inside the opening hole 22 of the semiconductor device substrate 10,
The electrode terminal 3 in the central portion of the electrode terminal formation surface of the semiconductor element 28
0a is arranged, and the electrode terminal 30b at the peripheral portion of the electrode terminal forming surface is arranged inside the opening hole 24.

Next, FIG. 2D shows a state in which the semiconductor element 28 and the wiring pattern 14 of the semiconductor device substrate 10 are electrically connected by wire bonding. A bonding wire 32 connects the electrode terminals 30a and 30b to the bonding portion 16 of the wiring pattern 14. The electrode terminal 30 of the semiconductor element 28 is used for wire bonding.
Bonding is performed with a and 30b as the primary side and the bonding portion 16 as the secondary side. Since the thickness of the protective film 20 is thicker than the loop height of the bonding wire 32, the bonding wire 32 does not protrude beyond the protective film 20.

In FIG. 2 (e), since the connecting portion between the semiconductor element 28 and the semiconductor device substrate 10 connected by wire bonding is sealed with resin, the semiconductor device substrate 1
The heat peeling tape 34 is attached to the surface side on which the wiring pattern 14 of 0 is formed. After applying the heat peel tape,
It can be easily peeled off by heating. By sticking the heat peeling tape 34 to one surface side of the semiconductor device substrate 10, adhesion of the sealing resin to the land portion 18 and the protective film 20 is prevented.

FIG. 3 shows a step of resin-sealing the connection between the semiconductor element 28 and the semiconductor device substrate 10. FIG. 3A shows a state in which the resin 38 is potted from the periphery of the semiconductor element 28 by the dispenser 36, and the side surface portion of the semiconductor element 28 and the opening holes 22 and 24 are filled with the resin 38. Since the surface of the semiconductor device substrate 10 on which the wiring pattern 14 is formed is shielded by the heat peeling tape 34, and the loop height of the bonding wire 32 is made lower than the thickness of the protective film 20, the bonding wire 32 is formed. Is resin 3
It is buried in 8 and sealed with resin.

FIG. 3B shows a state in which the thermal peeling tape 34 is peeled off and removed, and then the solder ball 40 is bonded to the land portion 18 of the wiring pattern 14 as an external connection terminal.
After bonding the solder balls 40 to the land portions 18, FIG.
By cutting at the position of line A in (b), the semiconductor device shown in FIG. 3 (c) is obtained. In this semiconductor device, the semiconductor device substrate 10 is bonded to the electrode terminal formation surface of the semiconductor element 28, and the wiring pattern 14 provided on the semiconductor device substrate 10 and the electrode terminals 30 a and 30 b of the semiconductor element 28 are bonded via the bonding wires 32. Electrically connected to the semiconductor element 2
The joint portion between the semiconductor device substrate 8 and the semiconductor device substrate 10 is sealed with the resin 38. This semiconductor device is formed to have a size (chip size) approximately equal to that of the semiconductor element 28 and is extremely small. The side surface of the semiconductor element 28 is sealed with a resin 38, and the back surface of the semiconductor element 28 is exposed to the outside. There is.

In the semiconductor device of this embodiment, as shown in FIG. 2D, the electrode terminals 30a and 30b of the semiconductor element 28 and the wiring pattern 14 of the semiconductor device substrate 10 are electrically connected by wire bonding. This is characterized in that the resin substrate 12 on which the wiring pattern 14 is formed is used as the semiconductor device substrate on which the semiconductor element 28 is mounted. The wire bonding method is widely used as a method for manufacturing a semiconductor device, the electrode terminal 30a,
Even in the case of products in which the arrangement of 30b is different, there is an advantage that the bonding position can be appropriately set by the control on the side of the bonding apparatus and can be used for general purposes. Also,
Even if the electrode terminals 30a and 30b are slightly misaligned, there is an advantage that they have a degree of freedom such as position correction and bonding.

Further, in the case of the semiconductor device substrate 10 using the resin substrate 12, there is no problem that the wiring pattern 14 is displaced because the wiring pattern 14 is always held by the resin substrate 12. Further, since the conventional wiring board manufacturing apparatus using the resin board can be used as it is, there is an advantage that the manufacturing cost of the semiconductor device board can be kept low.

(Second Embodiment) FIG. 4 shows a structure of a semiconductor device substrate 10 according to a second embodiment of the present invention. The semiconductor device substrate 10 of this embodiment is characterized in that a tape substrate 50 such as a polyimide tape is formed as a base material. In the present embodiment as well, for the sake of explanation, the semiconductor device substrate 10 is shown as a semiconductor device mounting semiconductor elements having electrode terminals respectively arranged at the central portion and the peripheral portion of the electrode terminal formation surface.

In FIG. 4B, 14 is a wiring pattern formed on one surface of the tape substrate 50. Wiring pattern 14
The bonding portion 16 and the land portion 18 are formed in the same as in the above-described embodiment. FIG. 4A shows a plan view of the semiconductor device substrate 10 viewed from the tape substrate 50 side, and the bonding portion 16 and the land portion 18 of the wiring pattern 14 are exposed. Further, the semiconductor device substrate 10 is provided with opening holes 22 and 24 in accordance with the arrangement of the electrode terminals formed on the electrode terminal forming surface of the semiconductor element.

The semiconductor device substrate 10 formed by using the tape substrate 50 shown in FIG. 4 as a base material can be manufactured by a usual method for manufacturing a semiconductor device substrate using a resin film such as a polyimide film as a base material. . For example, by using a substrate material in which a copper foil is adhered to one surface of the tape substrate 50 via an adhesive 19, opening holes 22 and 24 are formed, and then the copper foil is etched into a predetermined pattern. The semiconductor device substrate 10 shown in FIG. 4 can be obtained. In the semiconductor device substrate 10 of this embodiment, it is necessary to set the thickness of the tape substrate 50 to be thicker than the loop height of the bonding wire during wire bonding. That is, the thickness of the protective film 20 is 50 to 100 μm in the first embodiment, whereas the thickness of the tape substrate 50 is set to 50 to 100 μm in the present embodiment.

5 and 6 show a process of manufacturing the semiconductor device by mounting the semiconductor element 28 on the semiconductor device substrate 10 of the present embodiment. FIG. 5A shows a semiconductor device substrate 10,
FIG. 5B shows a state in which the elastomer layer 26 is formed on the surface of the semiconductor device substrate 10 on which the wiring pattern 14 is formed. In FIG. 5C, the semiconductor element 28 is formed on the elastomer layer 26.
It is in a state of being joined. The semiconductor element 28 is bonded so that the electrode terminal forming surface faces the elastomer layer 26. 30a is an electrode terminal arranged in the opening hole 22, and 30b is an electrode terminal arranged in the opening hole 24.

FIG. 5D shows a state in which the semiconductor element 28 and the wiring pattern 14 of the semiconductor device substrate 10 are electrically connected by wire bonding. Bonding part 1 of wiring pattern 14 via bonding wire 32
6 and the electrode terminal 30a or the electrode terminal 30b are electrically connected. As described above, since the tape substrate 50 is formed thicker than the loop height of the bonding wire 32, the loop portion of the bonding wire 32 does not protrude from the surface of the tape substrate 50. FIG. 5E shows a state in which the heat peeling tape 34 is attached to the surface of the tape substrate 50 of the semiconductor device substrate 10.

FIG. 6A shows a state in which the resin 38 is potted from the periphery of the semiconductor element 28 by the dispenser 36, and the side surface portion of the semiconductor element 28 and the openings 22 and 24 are filled with the resin 38. The surface of the semiconductor device substrate 10 on which the wiring pattern 14 is formed is shielded by the heat peeling tape 34 so that the resin 38 does not adhere to the land portion 18, and the bonding wire 32 and the bonding wire 32 and the electrode terminal 30a, The connection with 30b can be sealed with resin 38.

FIG. 6B shows a state in which the heat peeling tape 34 is peeled off and removed, and the solder balls 40 as external connection terminals are joined to the land portion 18. FIG. 6C shows a semiconductor device obtained by joining the solder ball 40 to the land portion 18 and then cutting it at the position of line A in FIG. 6B. Also in the semiconductor device of this embodiment, the electrode terminals 30a and 30b of the semiconductor element 28 and the wiring pattern 14 of the semiconductor device substrate 10 are electrically connected by wire bonding, as in the semiconductor devices of the above-described embodiments. And
Further, the semiconductor device of this embodiment is characterized in that the semiconductor device substrate 10 having the tape substrate 50 as a base material is used.

7 and 8 show a semiconductor device substrate 10 and a semiconductor device in the case of manufacturing a fan-out type semiconductor device using a semiconductor device substrate having a resin substrate 12 as a base material. In the case of the fan-out type semiconductor device, the external connection terminals are arranged outside the plane area of the semiconductor element 28. Also in the case of the present embodiment, the electrode terminals 30a and 30b of the semiconductor element 28 and the bonding portion 16 of the wiring pattern 14 are connected by wire bonding, and the connection portion is sealed by the resin 38. The manufacturing method of each component and the semiconductor device is the same as the contents described in the first embodiment, and the description thereof will be omitted.

9 and 10 show a semiconductor device substrate 10 and a semiconductor device when a fan-out type semiconductor device is manufactured using the semiconductor device substrate having the tape substrate 50 as a base material. FIG. 9 is a plan view of the semiconductor device substrate 10, FIG.
Reference numeral 0 is a cross-sectional view of a semiconductor device in which the semiconductor element 28 is mounted on the semiconductor device substrate 10. Also in the case of the semiconductor device of this embodiment, the electrode terminals 30a and 30b of the semiconductor element 28 and the bonding portion 16 of the wiring pattern 14 are connected by wire bonding, and the connection portion between the bonding wire 32 and the electrode terminals 30a and 30b is made of resin. It is sealed by 38. Since the configurations of the semiconductor device substrate 10 and the semiconductor device formed by the tape substrate 50 are the same as those described in the second embodiment, the description thereof will be omitted.

(Third Embodiment) FIGS. 11 and 12
Shows a manufacturing process for a third embodiment of a semiconductor device manufactured using a fan-out type semiconductor device substrate. The semiconductor device of this embodiment is characterized in that two semiconductor elements are stacked and mounted. The same members as those in the above-described embodiment are designated by the same reference numerals and the description thereof will be omitted. 11A is a sectional view of the semiconductor device substrate 10, and FIG. 11B is a resin substrate 12 with an elastomer layer 26.
The state in which is provided is shown. FIG. 11C shows the elastomer layer 26.
The first semiconductor element 28a is bonded to the. Three
Reference numeral 0a denotes an electrode terminal arranged at the center of the electrode terminal forming surface of the semiconductor element 28a, and 30b denotes an electrode terminal arranged at the peripheral portion of the electrode terminal forming surface.

FIG. 11D shows a state in which the elastomer layer 26a is provided on the lower surface of the semiconductor element 28a (the surface opposite to the surface on which the electrode terminals are formed) in order to bond the second semiconductor element 28b to the semiconductor element 28a. Show. Although the elastomer layer 26a is provided as a buffer layer, an adhesive layer may be provided instead of the elastomer layer 26a, and the second semiconductor element 28b may be bonded via the adhesive layer. FIG. 11E shows the semiconductor element 2 with the electrode terminal formation surface facing the elastomer layer 26a.
8b is adhered to the elastomer layer 26 to form the semiconductor element 28
It is a state in which a and 28b are stacked and mounted. The outer dimension of the lower semiconductor element 28b is set larger than that of the upper semiconductor element 28a so that the electrode terminals 30c arranged at the peripheral edge of the semiconductor element 28b are exposed on the upper surface.

FIG. 12 shows a step of connecting the semiconductor device substrate 10 and the semiconductor elements 28a and 28b by wire bonding and sealing the connection portion with a resin 38 to obtain a semiconductor device. Even when the semiconductor elements 28a and 28b are stacked and mounted, the thickness of the protective film 20 is made thicker than the height of the loop portion of the bonding wire 32 so that the loop portion of the bonding wire 32 does not protrude from the protective film 20. Wire bonding. 12B is a state in which the connection portion is resin-sealed with the resin 38, and FIG. 12C is a sectional view of the finally obtained semiconductor device. Thus, even when a plurality of semiconductor elements are stacked and mounted, the wiring pattern 14 and the semiconductor element 28 of the semiconductor device substrate 10 are wire bonded.
It is possible to obtain a semiconductor device in which the electrode terminals 30a, 30b and 30c of a and 28b are electrically connected.

FIG. 13 shows two semiconductor elements 28a and 28b.
Is an example in which a fan-in type semiconductor device is formed by stacking the above. For a fan-in type semiconductor device,
As shown in the drawing, the wiring patterns 1 formed on the electrode terminals of the semiconductor elements 28a and 28b and the semiconductor device substrate 10 respectively.
4 and the bonding part 16 of 4 are wire-bonded and electrically connected.

Although the two semiconductor elements are stacked and mounted in the above-described third embodiment, a plurality of semiconductor elements are mounted in the substrate surface of the semiconductor device substrate 10 in addition to the method of stacking the semiconductor elements. It can also be arranged in a plane to form a semiconductor device. Also in this case, the semiconductor device and the wiring pattern can be electrically connected to each other by wire-bonding the wiring pattern provided on the semiconductor device substrate 10 and the respective semiconductor elements to form a semiconductor device.

Further, in each of the above-mentioned embodiments,
The individual portion on which the individual semiconductor elements 28 are mounted as the semiconductor device substrate 10 has been illustrated and described. It is of course possible to manufacture a semiconductor device by using an individual substrate as the semiconductor device substrate 10. However, a large-sized semiconductor device substrate 10 having a plurality of individual semiconductor device substrates 10 arranged vertically and horizontally. It is of course possible to manufacture the semiconductor device substrate as a work. When such a large-sized semiconductor device substrate is used, after the semiconductor element mounting process, wire bonding process, and resin sealing process, the semiconductor device substrate is cut into individual pieces. The device can be obtained. By using a large-sized semiconductor device substrate as the work, the semiconductor device can be efficiently manufactured.

[0038]

As described above, according to the semiconductor device substrate and the semiconductor device of the present invention, the semiconductor element mounted on the semiconductor device substrate and the wiring pattern formed on the semiconductor device substrate are wire bonded. Since the connection is made by wire bonding, wire bonding can be performed by the control of the bonding device even when the arrangement of the electrode terminals of the semiconductor element is different. Therefore, the degree of freedom in designing the semiconductor device substrate is improved, and the semiconductor device substrate can be commonly used for different kinds of semiconductor elements. Further, the wire bonding method has an advantage that reliability of electrical connection is improved. Further, in the semiconductor device substrate, since the wiring pattern is held by the base material, the wiring pattern is not displaced and the reliability of the semiconductor device can be improved.

[Brief description of drawings]

FIG. 1 is a plan view and a sectional view showing a configuration of a first embodiment of a semiconductor device substrate.

FIG. 2 is an explanatory diagram showing a process of manufacturing a semiconductor device using the semiconductor device substrate according to the first embodiment.

FIG. 3 is an explanatory diagram showing a process of manufacturing a semiconductor device using the semiconductor device substrate according to the first embodiment.

FIG. 4 is a plan view and a cross-sectional view showing a configuration of a second embodiment of a semiconductor device substrate.

FIG. 5 is an explanatory diagram showing a process of manufacturing a semiconductor device using the semiconductor device substrate according to the second embodiment.

FIG. 6 is an explanatory diagram showing a process of manufacturing a semiconductor device using the semiconductor device substrate according to the second embodiment.

FIG. 7 is a plan view of a semiconductor device substrate used for manufacturing a fan-out type semiconductor device.

FIG. 8 is a cross-sectional view showing the configuration of a fan-out type semiconductor device.

FIG. 9 is a plan view showing another configuration example of a semiconductor device substrate used for manufacturing a fan-out type semiconductor device.

FIG. 10 is a cross-sectional view showing another configuration example of a fan-out type semiconductor device.

FIG. 11 is an explanatory diagram showing a process of manufacturing a semiconductor device in which semiconductor elements are stacked and mounted.

FIG. 12 is an explanatory diagram showing wire bonding and resin sealing steps.

FIG. 13 is a cross-sectional view showing an embodiment in which semiconductor elements are stacked and mounted in a fan-in type semiconductor device.

[Explanation of symbols]

10 Semiconductor device substrate 12 Resin substrate 14 wiring pattern 16 Bonding part 18 Land 19 adhesive 20 Protective film 22, 24 Open hole 26 Elastomer layer 28 Semiconductor element 30a, 30b Electrode terminal 32 bonding wire 34 heat peeling tape 36 dispensers 38 resin 40 solder balls 50 tape substrate

Claims (7)

[Claims] 1. A wiring pattern is provided on one surface of a resin substrate except a required portion such as a bonding portion and a land portion, and a wiring pattern is provided on the other surface of the resin substrate. A semiconductor device substrate having an opening for exposing an electrode terminal arranged on an electrode terminal formation surface when a semiconductor element is bonded and mounted, wherein the protective film and the electrode terminal of the semiconductor element are A substrate for a semiconductor device, which is provided to be thicker than a height of a loop portion of a bonding wire which is connected to a bonding portion by wire bonding. 2. A tape pattern is provided on one surface of a tape substrate so that required portions such as a bonding portion and a land portion are exposed on the other surface side, and an electrode terminal formation surface of a semiconductor element is provided on one surface of the tape substrate. A semiconductor device substrate having an opening for exposing an electrode terminal disposed on an electrode terminal formation surface when a semiconductor element is bonded and mounted, wherein the tape substrate is the electrode terminal of the semiconductor element and the electrode terminal of the semiconductor element. A substrate for a semiconductor device, which is provided to be thicker than a height of a loop portion of a bonding wire which is connected to a bonding portion by wire bonding. 3. The semiconductor device substrate according to claim 1, wherein the other surface of the resin substrate and the electrode terminal forming surface of the semiconductor element are bonded to each other to mount the semiconductor element, and the electrode terminal on the electrode terminal forming surface and the wiring pattern. Is a semiconductor device in which an external connection terminal is joined to the land portion, and the bonding portion including the bonding wire and the outer peripheral side surface of the semiconductor element are sealed with resin. A semiconductor device characterized by being provided. 4. A semiconductor device is mounted by adhering an electrode terminal forming surface of a semiconductor element to one surface of a tape substrate of the semiconductor device substrate according to claim 2, and the electrode terminal on the electrode terminal forming surface and the wiring pattern. Is a semiconductor device in which an external connection terminal is joined to the land portion, and the bonding portion including the bonding wire and the outer peripheral side surface of the semiconductor element are sealed with resin. A semiconductor device characterized by being provided. 5. A plurality of semiconductor elements are stacked and mounted on the semiconductor device substrate with the electrode terminal forming surface in the same direction, and each semiconductor element and a wiring pattern of the semiconductor device substrate are electrically bonded by wire bonding. 5. The semiconductor device according to claim 3, wherein the semiconductor device is connected to. 6. A plurality of semiconductor elements are mounted in a substrate surface of the semiconductor device substrate, and each semiconductor element and a wiring pattern of the semiconductor device substrate are electrically connected by wire bonding. The semiconductor device according to claim 3, wherein the semiconductor device is a semiconductor device. 7. The semiconductor device according to claim 3, wherein the semiconductor element is mounted on the semiconductor device substrate via a buffer layer.