JP2003078171A - Wiring and forming method thereof, connection hole and forming method thereof, wiring forming body and forming method thereof, display element and forming method thereof, image display device and manufacturing method thereof - Google Patents

Abstract

(57) [Problem] To reduce the number of processes and enable easy and accurate wiring formation and connection hole formation. A groove is formed in a resin layer in accordance with a wiring pattern, and a resin layer other than the groove is subjected to a hydrophobizing treatment, or alternatively, the resin layer is subjected to a hydrophobizing treatment. After forming a groove in accordance with the wiring pattern, a fine particle type conductive paste is applied and sintered. Thereby, the metal wiring following the groove shape is formed in a self-aligning manner. The same applies to the connection holes. The hydrophobic treatment is performed by forming a silicon nitride film that is a hydrophobic film or by nitriding plasma treatment.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring and a connection hole formed in a resin layer, a method of forming the wiring, a wiring formed body thereof, and a method of forming the wiring. Further, the present invention relates to a display element and a method of forming the same, an image display device and a method of manufacturing the same, to which the invention is applied.

[0002]

2. Description of the Related Art For example, when light emitting elements are arranged in a matrix and assembled into an image display device, conventionally, a liquid crystal display device (LCD: Liquid Crystal Display) or a plasma display panel (PDP: Plasma Display Panel) is used.
As described above, an element is directly formed on the substrate, or a single LED package is arranged like a light emitting diode display (LED display). For example, in an image display device such as an LCD or a PDP, since the elements cannot be separated, it is usual that the respective elements are formed at intervals from the pixel pitch of the image display device from the beginning of the manufacturing process.

On the other hand, in the case of an LED display, L
The ED chip is taken out after dicing, individually connected to external electrodes by wire bonding or bump connection by flip chip, and packaged. In this case, the pixels are arranged at a pixel pitch as an image display device before or after packaging, and this pixel pitch is independent of the element pitch at the time of element formation.

LED (light emitting diode) which is a light emitting element
Is expensive, it is possible to reduce the cost of the image display device using LEDs by manufacturing many LED chips from one wafer. That is, the price of the image display device can be reduced by changing the conventional LED chip size of about 300 μm square to an LED chip of several tens μm square and connecting the LED chips to manufacture the image display device.

[0005]

When an image display device is manufactured by the above transfer technique, it is preferable that the light emitting element is made into a chip component in order to realize efficient transfer and accurate transfer. Here, in order to form the light emitting element into a chip component, the light emitting element may be embedded in a resin material and cut out to be treated as a display element.

By the way, in the case of embedding a light emitting element in a resin as described above to form a chip component, it is necessary to form a wiring connected to the light emitting element on the resin and use this as an electrode for external connection. . Conventionally, in order to form a wiring made of metal on a resin, a method such as copper plating is generally used. However, in the case of the plating method, for example, there are drawbacks such that a layer that functions as an electrode is required in advance in the case of electrolytic plating, and it is difficult to control the film formation in the case of electroless plating. Further, when the process of patterning after forming a film on the entire surface by a plating method is involved, there is a problem that the number of steps is large and complicated. In this respect, in the case of the printing method using the conductive paste, the number of steps can be reduced because the patterning is performed simultaneously with the film formation.
For example, there is a problem in the accuracy of alignment with the lower layer pattern.

The present invention has been proposed in view of the above-mentioned conventional circumstances, and it is possible to reduce the number of steps, and to easily and accurately form a wiring and a connection hole, and a wiring forming method, It is an object of the present invention to provide a connection hole and a method for forming a connection hole, and further to provide a wiring forming body and a method for forming the same.

It is another object of the present invention to provide a method of forming a display element and a method of manufacturing an image display device, which are applied to the above. That is, it is possible to form a highly reliable display element having a structure in which a good electrode can be formed even when the light emitting element is modularized with resin, and which can be easily transported and mounted on a substrate. It is an object of the present invention to provide a method for forming an image display device, and further to provide a method for manufacturing an image display device which is excellent in productivity and can suppress the manufacturing cost.

[0009]

In order to achieve the above-mentioned object, the wiring of the present invention is such that a groove is formed in a resin layer according to a wiring pattern, and a fine particle type conductive paste is formed according to the groove shape. It is characterized by being sintered. The wiring forming method of the present invention is a wiring forming method of forming a metal wiring on a resin layer, wherein grooves are formed in the resin layer in accordance with a wiring pattern, and the resin layer other than the grooves is hydrophobic. After applying the oxidization treatment, or after subjecting the resin layer to the hydrophobic treatment to form grooves in the resin layer according to the wiring pattern, the fine particle type conductive paste is applied and sintered. It is characterized in that the metal wiring is formed in a manner similar to the groove shape.

When the fine particle type conductive paste is applied and then sintered, the volume is reduced to about 1/5 to 1/10. At this time, if the resin surface is subjected to a hydrophobic treatment, the fine particle type conductive paste becomes hydrophobic. It is repelled by the surface of the resin that has been solidified, and the film is selectively formed only in the groove. As a result, the wiring pattern is formed in a so-called self-alignment manner. The fine particle type conductive paste is formed by dispersing very fine metal nanoparticles, is capable of forming a fine wiring pattern, and has high electrical reliability.

Further, the connection hole of the present invention is characterized in that a connection hole is formed in the resin layer, and the fine particle type conductive paste is filled in the hole and sintered. Further, the method for forming a connection hole of the present invention is a method for forming a connection hole in which a conductive material is filled on a resin layer, wherein a hole for connection is formed in the resin layer, and a portion other than the hole is formed. After applying hydrophobic treatment to the resin layer of
Alternatively, it is characterized in that the resin layer is subjected to a hydrophobic treatment to form holes for connection in the resin layer, and then a fine particle type conductive paste is applied and filled in the holes, and then sintered. It is a thing.

Since the fine particle type conductive paste can have a low viscosity, it can be easily filled even in fine holes. As described above, when the holes are formed in the resin layer and the resin layer other than the holes is subjected to the hydrophobic treatment and then applied, the fine particle type conductive paste is self-aligned in the holes. Filled,
So-called through holes (connection holes) are easily formed.

Further, in the wiring forming body of the present invention, the groove is formed in the resin layer according to the wiring pattern and the connection hole is formed, and the fine particle type conductive paste is sintered according to the groove shape. In addition, the hole is filled with a fine particle type conductive paste and sintered. Further, the method for forming a wiring forming body of the present invention includes forming a groove in a resin layer according to a wiring pattern and forming a hole for connection, and hydrophobizing a portion of the resin layer other than the groove and the hole. Or after applying a hydrophobic treatment to the resin layer to form a groove in the resin layer according to the wiring pattern and a hole for connection, and then apply the fine particle type conductive paste, By sintering, the metal wiring that follows the groove shape and the connection hole in which the hole is filled with a conductive material are formed. In this wiring forming body and its forming method, the wiring formation and the connection hole formation are simultaneously performed in a self-aligned manner.

Furthermore, in the display element of the present invention, the light emitting element is embedded in a resin to be a chip component, a groove is formed on the surface of the resin, and the fine particle type conductive paste is sintered according to the shape of the groove. It is characterized by being made into an electrode. Further, the method of forming a display element of the present invention is a method of forming a display element in which a light emitting element is embedded in a resin to form a chip component, and then an electrode is formed on the resin surface. And after applying a hydrophobizing treatment to the resin other than the groove, or to the above resin,
A groove is formed on the resin surface in accordance with the wiring pattern, a fine particle type conductive paste is applied, and this is sintered to form an electrode following the groove shape. In such a display element or a method of forming a display element, fine electrodes can be formed easily and surely, and their electrical reliability is high.

Further, the image display device of the present invention is an image display device in which light-emitting elements are embedded in resin and chip-shaped display elements are arranged in a matrix, and the display elements have grooves on the resin surface. It is characterized in that it is formed, and the fine particle type conductive paste is sintered to form an electrode following the groove shape. Further, in the method for manufacturing an image display device of the present invention, the light emitting elements are transferred so that the light emitting elements are separated from a state in which the light emitting elements are arranged on the first substrate, and the light emitting elements are attached to a temporary holding member. A first transfer step of holding the light emitting element, a second transfer step of further transferring the light emitting elements held by the temporary holding member to a second substrate, and a wiring connected to each of the light emitting elements is formed. In a method of manufacturing an image display device having a wiring forming step and arranging display elements, which are light emitting elements embedded in resin into chip parts, in a matrix form, and embedding the light emitting elements in resin to form chip parts, A groove is formed on the surface of the resin according to the wiring pattern, and the resin other than the groove is subjected to a hydrophobic treatment, or the resin is subjected to a hydrophobic treatment to form a wiring pattern on the resin surface. After forming the grooves according, applying a particulate form conductive paste,
This is characterized by forming an electrode that follows the groove shape by sintering this.

In the display element and the image display device of the present invention, the light emitting element is embedded in a resin and modularized to form a display element. In this way, if the light-emitting elements that are minutely formed are embedded in resin to be re-formed into a size that is easy to handle and modularized, manufacturing costs can be suppressed to the utmost limit, and at the same time, handling characteristics can be secured, so that it can be transported. Is also easy. In addition, by forming drive electrodes of the light emitting elements on the surface of the modularized display element, power lines and signal lines formed on the base can be easily connected to these drive electrodes.
Mounting on a substrate is also extremely easy.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a wiring and a method for forming the same, a connection hole and a method for forming the same, a wiring body and a method for forming the same, a display element and a method for forming the same, an image display device and a method for manufacturing the same, to which the present invention is applied, will be described. Will be described in detail with reference to the drawings.

First, regarding the wiring and wiring forming method of the present invention, the basic idea is to form a groove in the resin layer and form the wiring pattern of the fine particle type conductive paste in a self-aligning manner. . FIG. 1 shows an example of a wiring forming method to which the present invention is applied in the order of steps. In this example, as shown in FIG. 1A, a groove 2 is first formed in a resin layer 1. . The groove 2 is formed according to the wiring pattern, and can be easily formed by, for example, etching or resin molding using a mold.

Next, as shown in FIG. 1B, the groove 2 is formed.
The surface of the resin layer 1 other than the above is subjected to a hydrophobic treatment to form a hydrophobic layer 3. This hydrophobizing treatment may be performed by forming a hydrophobic layer, for example, a silicon nitride (Si ₃ N ₄ ) layer, or by hydrophobizing by a nitriding plasma treatment or the like. This hydrophobic treatment is
For example, in the case of forming a silicon nitride film, it is sufficient to selectively form the film only on the portion other than the groove 2 by a method such as mask sputtering, and in the case of the nitriding plasma treatment, the groove 2 is covered with a mask and the other portions are formed. The nitriding plasma treatment may be selectively applied only to the portion.

After the portion other than the groove 2 has been subjected to the hydrophobic treatment in this manner, the fine particle type conductive paste 4 is uniformly applied as shown in FIG. 1 (c). The application of the fine particle type conductive paste 4 does not need to be performed by printing or the like, and may be applied uniformly on the entire surface.

The fine particle type conductive paste is formed, for example, by a gas evaporation method and has a particle size of 100 nm or less (for example, 7 n).
(about m) finely dispersed electrically conductive particles, it does not aggregate even at a high metal content at room temperature and can be handled as if it were a uniform liquid, and can be applied to a microstructured surface. Specific examples thereof include nanopaste manufactured by Harima Chemicals. This nanopaste is a dispersion of independently dispersed silver nanoparticles in a thermosetting resin.When heated to a certain temperature, the supplementary substance is activated to chemically remove the dispersant, and By curing and shrinking, the nanoparticles are brought into contact with each other, and fusion and fusion are accelerated to form wiring. The wiring obtained by sintering this has sufficient conductivity because the ultrafine particles are fused and fused.

After the fine particle type conductive paste 4 is applied, it is heated and sintered. The heating temperature is about 200 ° C. Then, the volume of the fine particle type conductive paste 4 is 1
Shrink to about / 5 to 1/10. Here, if the coating amount of the fine particle type conductive paste 4 is set to be approximately the same as the volume of the groove 2 formed in the resin layer 1 after contraction, the fine particle type conductive paste 4 is made into the hydrophobic layer 3. It is repelled by and is rapidly aggregated in the groove 2 as shown in FIG. As described above, the wiring pattern 5 that follows the shape of the groove 2 formed in the resin layer 1 in a self-aligning manner is formed.

In the above example, after the groove 2 is formed in the resin layer 1, the resin layer 1 is subjected to the hydrophobizing treatment. On the contrary, the resin layer 1 is subjected to the hydrophobizing treatment. After that, the groove 2 may be formed. In this case, it is not necessary to selectively perform the hydrophobizing treatment, and the process can be simplified.

An example of the process in which the groove 2 is formed after the resin layer 1 is subjected to the hydrophobic treatment will be described below. This process is as shown in FIG. 2. First, as shown in FIG. 2A, the resin layer 1 is subjected to a hydrophobic treatment to form the hydrophobic layer 3. Next, FIG.
As shown in (b), after the photoresist layer 6 is selectively formed according to the wiring pattern by a photolithography technique or the like, the photoresist layer 6 is used as a mask and etched by a method such as reactive ion etching (RIE). Then, as shown in FIG. 2C, the groove 2 is formed in the resin layer 1 at the same time as the hydrophobic layer 3 is selectively removed.

Next, as shown in FIG. 2 (d), the photoresist layer 6 is removed, and as shown in FIG. 2 (e), the fine particle type conductive paste 4 is applied. Subsequently, this is sintered, and as shown in FIG. 2F, the wiring pattern 5 that follows the shape of the groove 2 formed in the resin layer 1 is formed in a self-aligned manner. Also in this example, it is possible to easily form a fine wiring pattern having excellent conductivity.

The above method can also be applied to the formation of connection holes (so-called through holes). Hereinafter, an example of a method of forming a connection hole to which the present invention is applied will be described with reference to FIG. In forming the connection hole, either the formation of the hole in the resin layer or the hydrophobic treatment may be performed first, but here, the hydrophobic treatment is performed first to form the hole in the resin layer. The case where the formation is performed later will be described as an example.

To form the connection hole, as shown in FIG. 3A, the resin layer 1 is subjected to a hydrophobic treatment to form the hydrophobic layer 3. Next, as shown in FIG. 3B, after a photoresist layer 6 is selectively formed according to the wiring pattern by a photolithography technique or the like, the photoresist layer 6 is used as a mask to perform, for example, reactive ion etching (RIE).
As shown in FIG. 3C, the hydrophobic layer 3 is selectively removed and at the same time a hole 7 for connection is formed in the resin layer 1 in accordance with the wiring layer 8 formed on the back surface as shown in FIG. 3C. Form.

Next, as shown in FIG. 3D, the photoresist layer 6 is removed, and as shown in FIG. 3E, the fine particle type conductive paste 4 is applied. Then, when this is sintered, as shown in FIG. 3 (f), the fine particle type conductive paste 4 is quickly filled in the holes 7 formed in the resin layer 1,
Connection holes (through holes) that connect the front and back of the resin layer 1 are formed in a self-aligned manner.

By applying the present invention as described above, the connection hole can be easily formed, but it is possible to go one step further and perform the wiring formation and the connection hole formation at the same time. FIG. 4 shows an example of a method for forming a wiring forming body in which wiring formation and connection hole formation are performed at the same time. In addition,
Also in this example, either the formation of grooves or holes in the resin layer or the hydrophobic treatment may be performed first, but here, the hydrophobic treatment is performed first to form the grooves and holes in the resin layer. Will be described as an example.

To form the wiring forming body, as shown in FIG. 4A, the resin layer 1 is subjected to a hydrophobic treatment to form the hydrophobic layer 3. Next, as shown in FIG. 4B, a photoresist layer 6 is selectively formed according to the wiring pattern by a photolithography technique or the like, and then the photoresist layer 6 is used as a mask for reactive ion etching (RI), for example.
Etching is performed by a method such as E) to selectively remove the hydrophobizing layer 3 and simultaneously form the groove 2 in the resin layer 1 as shown in FIG. 4C. Further, as shown in FIG. 4D, the resin layer 1 is also formed by a technique such as etching.
A connecting hole 7 is formed in accordance with the wiring layer 8 formed on the back surface. Here, either the groove 2 or the hole 7 may be formed first, and the groove 2 may be formed after forming the hole 7 contrary to the present example.

Next, as shown in FIG. 4 (e), the photoresist layer 6 is removed, and as shown in FIG. 4 (f), the fine particle type conductive paste 4 is applied. Then, this is sintered. Then, as shown in FIG. 4G, the fine particle type conductive paste 4 is rapidly aggregated and filled in the grooves 2 and the holes 7 formed in the resin layer 1, and the grooves 2 formed in the resin layer 1 are filled. Connection holes (through holes) for connecting the front and back of the wiring pattern 5 and the resin layer 1 following the shape are formed in a self-aligned manner.

The above wiring forming method can be applied to, for example, a method of forming a display element in which an electrode is formed on a resin surface after a light emitting element is embedded in a resin to form a chip component. Hereinafter, a method for forming the display element and a method for manufacturing the image display device will be described.

For example, when an image display device is manufactured using light emitting diodes, it is necessary to arrange the light emitting diodes so as to be spaced apart from each other. There are various methods for this arrangement, but here, the two-step expansion transfer method will be described as an example. In the two-step magnifying transfer method, first, the elements formed on the first substrate with a high degree of integration are transferred to the temporary holding member so that the elements are separated from the state in which the elements are arranged on the first substrate. Then, two-step enlargement transfer is performed in which the element held by the temporary holding member is further separated and transferred onto the second substrate. Although the transfer is performed in two steps in this example, the transfer can be performed in three steps or in multiple steps depending on the degree of enlargement in which the elements are arranged apart from each other.

FIG. 5 is a diagram showing the basic steps of the two-step enlargement transfer method. First, the first substrate 20 shown in FIG.
Elements 22 such as light emitting elements are densely formed thereon. By forming the elements densely, the number of elements generated on each substrate can be increased, and the product cost can be reduced. The first substrate 20 is, for example, a semiconductor wafer,
Various substrates such as a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate can be formed, but each element 22 may be directly formed on the first substrate 20, or formed on another substrate. It may be an array of the created ones.

Next, as shown in FIG. 5B, the elements 22 from the first substrate 20 to the temporary holding member 2 shown by broken lines in the figure.
1, and each element 2 is transferred onto the temporary holding member 21.
2 is retained. The adjacent elements 22 are now separated,
They are arranged in a matrix as shown. Ie element 2
2 is transferred so as to widen the spaces between the elements also in the x direction, but is also transferred so as to widen the spaces between the elements also in the y direction perpendicular to the x direction. The distance separated at this time is
The distance is not particularly limited, and as an example, the distance can be set in consideration of the formation of the resin portion and the formation of the electrode pad in the subsequent process. All the elements on the first substrate 20 may be transferred while being separated from each other when the first substrate 20 is transferred onto the temporary holding member 21. In this case, the size of the temporary holding member 21 may be equal to or larger than the size obtained by multiplying the number of elements 22 arranged in a matrix (in the x direction and the y direction) by the distance. In addition, the temporary holding member 11
It is also possible that a part of the elements on the first substrate 20 are transferred on the upper portion while being spaced apart from each other.

After the first transfer step as described above, as shown in FIG. 5C, the elements 22 existing on the temporary holding member 21 are separated from each other. The resin is covered and the electrode pad is formed. The resin coating around the element is formed for facilitating the formation of the electrode pad and facilitating the handling in the next second transfer step. As will be described later, the electrode pad is formed after the second transfer step in which the final wiring is continued, so that the electrode pad is formed in a relatively large size so that wiring failure does not occur at that time. The electrode pads are not shown in FIG. 5 (c). A resin-formed chip 24 is formed by covering each element 22 with the resin 23. Element 22
Is located substantially in the center of the resin-formed chip 24 on a plane,
It may be present at a position deviated to one side or a corner side.

Next, as shown in FIG. 5D, the second transfer step is performed. In this second transfer process, the elements 22 arranged in a matrix on the temporary holding member 21 are transferred onto the second substrate 25 so as to be further separated together with the resin-formed chips 24. Also in the second transfer step, the adjacent element 22
Are separated from each other by the resin forming chips 24 and arranged in a matrix as shown in the drawing. That is, the elements 22 are transferred so as to widen the distance between the elements in the x direction, but are also transferred so as to widen the distance between the elements also in the y direction perpendicular to the x direction. Assuming that the positions of the elements arranged in the second transfer step correspond to the pixels of the final product such as an image display device, approximately an integer multiple of the pitch between the original elements 22 is arranged in the second transfer step. It is the pitch of the elements 22. Here, when the enlargement ratio of the pitch separated from the first substrate 20 to the temporary holding member 21 is n and the expansion ratio of the pitch separated from the temporary holding member 21 to the second substrate 25 is m, an approximately integral multiple The value E of is expressed by E = n × m.

Wiring is provided to each of the elements 22 separated from the resin-formed chip 24 on the second substrate 25. This time,
Wiring is performed by using the electrode pad or the like previously formed while suppressing connection failure as much as possible. This wiring is, for example, the element 22.
Is a light emitting element such as a light emitting diode, a p electrode,
Including wiring to the n-electrode.

In the two-step enlargement transfer method shown in FIG.
Is the electrode pad using the separated space after the first transfer.
Can be performed, and can be created after the second transfer.
Lines are applied, but using the electrode pads etc. that were previously formed
Wiring is performed while suppressing connection failures as much as possible. Therefore,
The yield of the image display device can be improved. Well
Also, in the two-step expansion transfer method of this example, the distance between the elements
There are two steps to separate the elements.
Actually, by performing the multi-step expansion transfer that separates
The number of transfers will be reduced. That is, for example, here
Temporary holding members 21, 21a from the first substrate 20, 20a
The expansion ratio of the pitches separated by 2 is set to 2 (n = 2)
Separated from the holding members 21 and 21a on the second substrate 25
Assuming that the pitch expansion rate is 2 (m = 2), the
If you try to transfer to the area enlarged by copying,
The rate is 4 times 2 × 2, and the square of that is 16 times of transfer.
Then, it becomes necessary to perform alignment of the first substrate 16 times.
However, in the two-step expansion transfer method of this example, the number of alignment
Is the square of the enlargement factor of 2 in the first transfer process 4 times and the second transfer process
A total of 8 if you simply add 4 times the power of 2
It only needs to be done once. That is, when the same transfer magnification is intended,
In the case of (n + m)^Two= N^Two+ 2nm + m ^TwoAnd
Therefore, be sure to reduce the transfer count by 2 nm.
You can do it. Therefore, the number of manufacturing processes is
And saves money, especially when the expansion rate is large.
Become.

In the two-step enlargement transfer method shown in FIG. 5, the element 22 is, for example, a light emitting element, but is not limited to this, and other elements such as a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, and a thin film transistor. Element, thin film diode element, resistance element, switching element, micro magnetic element,
It may be an element selected from minute optical elements or a portion thereof, or a combination thereof.

In the second transfer step, the light emitting element is treated as a resin-formed chip and transferred from the temporary holding member to the second substrate. The resin-formed chip will be described with reference to FIGS. 6 and 7. Explain. The resin-formed chip 30 is a light-emitting element 31 that is spaced apart and is solidified with resin 32 around the light-emitting element 31. Such a resin-formed chip 30 has the light-emitting element 31 on the second substrate from the temporary holding member. It can be used when transferring. The resin-formed chip 30 has a substantially flat plate shape, and its main surface has a substantially square shape. The shape of the resin-formed chip 30 is a shape formed by solidifying a resin 32. Specifically, an uncured resin is applied to the entire surface so as to include each light emitting element 31, and the edge is formed after the resin is cured. It is a shape obtained by cutting the portion by dicing or the like.

Electrode pads 33 and 34 are formed on the front surface side and the back surface side of the substantially flat resin 32, respectively. The electrode pads 33, 34 are formed on the entire surface by the electrode pads 33, 3
It is formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer which is a material of No. 4, and patterning it into a required electrode shape by a photolithography technique. These electrode pads 33 and 34 are formed so as to be connected to the p electrode and the n electrode of the light emitting element 31, respectively, and via holes or the like are formed in the resin 32 if necessary. The above wiring forming method can be applied to the formation of these electrode pads 33 and 34.
Grooves are formed in the electrode 2 in accordance with the shape of the electrode pad, and a fine particle type conductive paste is applied and sintered to form in a self-aligning manner.

Here, the electrode pads 33 and 34 are formed on the front surface side and the back surface side of the resin-formed chip 30, respectively, but it is possible to form both electrode pads on one surface, for example, in the case of a thin film transistor. Since there are three electrodes of a source, a gate, and a drain, three or more electrode pads may be formed. Electrode pad 33,
The position of 34 is deviated on the flat plate so that the contacts do not overlap even if the contacts are taken from the upper side in the final wiring formation. The shape of the electrode pads 33, 34 is not limited to the square shape, and may be another shape.

By constructing such a resin-formed chip 30, the periphery of the light emitting element 31 is covered with the resin 32, and the electrode pads 33 and 34 can be accurately formed by flattening, and the area is wider than that of the light emitting element 31. Electrode pad 3
3, 34 can be extended, and handling is facilitated when the transfer in the next second transfer step is advanced by the suction jig. As will be described later, since the final wiring is performed after the subsequent second transfer step, the electrode pads 33, 34 having a relatively large size are formed.
By using the wiring, wiring failure can be prevented.

Next, FIG. 8 shows the structure of a light emitting element as an example of an element used in the two-step expansion transfer method of this example. 8A is a sectional view of the element, and FIG. 8B is a plan view. This light emitting element is a GaN-based light emitting diode, for example, an element that is crystal-grown on a sapphire substrate. In such a GaN-based light emitting diode, laser ablation occurs due to laser irradiation through the substrate, and film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer due to the phenomenon of nitrogen vaporization of GaN. It has a feature that element isolation can be facilitated.

First, regarding the structure, a hexagonal pyramidal GaN layer 42 that is selectively grown is formed on a base growth layer 41 made of a GaN-based semiconductor layer. An insulating film (not shown) is present on the underlying growth layer 41, and the hexagonal pyramidal GaN layer 42 is MOCVD-formed in the opening of the insulating film.
It is formed by the method. The GaN layer 42 is a pyramid-shaped growth layer covered with the S-plane (1-101 plane) when the main surface of the sapphire substrate used during growth is the C-plane, and is a region doped with silicon. is there. This G
The inclined S-plane portion of the aN layer 42 functions as a clad having a double hetero structure. An InGaN layer 43, which is an active layer, is formed so as to cover the inclined S-plane of the GaN layer 42, and a magnesium-doped GaN layer 44 is formed outside thereof.
Is formed. This magnesium-doped GaN layer 44
Also functions as a clad.

Such a light emitting diode has a p electrode 4
5 and the n-electrode 46 are formed. The p electrode 45 is Ni / Pt formed on the magnesium-doped GaN layer 44.
/ Au or Ni (Pd) / Pt / Au. The n-electrode 46 is formed by vapor-depositing a metal material such as Ti / Al / Pt / Au at the opening of the insulating film (not shown). The underlying growth layer 41
When taking out the n-electrode from the back side of the
Is unnecessary on the front surface side of the underlying growth layer 41.

The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be peeled off from the sapphire substrate relatively easily by laser ablation, and a laser beam is selectively irradiated. As a result, selective peeling is realized. The GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or in a strip shape, or may have a pyramidal structure in which a C plane is formed at an upper end portion. Further, it may be another nitride-based light emitting device, a compound semiconductor device, or the like.

Next, a specific method of manufacturing an image display device to which the light emitting element arranging method shown in FIG. 5 is applied will be described. The light emitting element uses the GaN-based light emitting diode shown in FIG. First, as shown in FIG.
A plurality of light emitting diodes 52 are densely formed on the main surface of. The size of the light emitting diode 52 may be minute, and may be, for example, about 20 μm on each side. As a constituent material of the first substrate 51, a material having a high transmittance with respect to the wavelength of the laser with which the light emitting diode 52 is irradiated, such as a sapphire substrate, is used. Although the p-electrode and the like are formed in the light emitting diode 52, the final wiring is not yet formed, and the groove 52g for separating the elements is formed, so that the individual light emitting diodes 52 can be separated. The formation of the groove 52g is performed by reactive ion etching, for example.

Next, the light emitting diode 52 on the first substrate 51 is transferred onto the first temporary holding member 53. Here, as an example of the first temporary holding member 53, a glass substrate,
A quartz glass substrate, a plastic substrate, or the like can be used. In this example, the quartz glass substrate was used. A release layer 54 that functions as a release layer is formed on the surface of the first temporary holding member 53. For the release layer 54, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, polyvinyl alcohol: PVA), polyimide, or the like can be used, but here, polyimide is used.

At the time of transfer, as shown in FIG. 9, an adhesive agent (for example, an ultraviolet curing adhesive agent) 55 sufficient to cover the light emitting diode 52 is applied on the first substrate 51 and is supported by the light emitting diode 52. Thus, the first temporary holding member 53 is superposed. In this state, as shown in FIG. 10, the adhesive 55 is irradiated with ultraviolet rays (UV) from the back surface side of the first temporary holding member 53 to cure it. The first temporary holding member 53 is a quartz glass substrate, and the ultraviolet rays pass through this to quickly cure the adhesive 55.

At this time, the first temporary holding member 53 is
Since it is supported by the light emitting diode 52,
The distance between the first substrate 51 and the first temporary holding member 53 is
It depends on the height of the light emitting diode 52.
As shown in FIG. 10, if the adhesive 55 is cured in a state in which the first temporary holding member 53 is superposed so as to be supported by the light emitting diode 52, the thickness t of the adhesive 55 becomes the first substrate. It is regulated by the distance between 51 and the first temporary holding member 53, and is regulated by the height of the light emitting diode 52. That is, the light emitting diode 52 on the first substrate 51 functions as a spacer, and an adhesive layer having a constant thickness is formed between the first substrate 51 and the first temporary holding member 53. . As described above, in the above method, the thickness of the adhesive layer is determined by the height of the light emitting diode 52, so that it is possible to form the adhesive layer having a constant thickness without strictly controlling the pressure.

After the adhesive 55 is cured, a laser is applied to the light emitting diode 52 as shown in FIG.
Then, the light emitting diode 52 is separated from the first substrate 51 by laser ablation. G
Since the aN-based light emitting diode 52 decomposes into metallic Ga and nitrogen at the interface with sapphire, it can be peeled off relatively easily. An excimer laser, a harmonic YAG laser, or the like is used as a laser for irradiation. By the peeling using the laser ablation, the light emitting diode 52 is separated at the interface of the first substrate 51 and is transferred onto the temporary holding member 53 in a state of being embedded in the adhesive 55.

FIG. 12 shows a state in which the first substrate 51 is removed by the above peeling. At this time, the GaN-based light-emitting diode is peeled off from the first substrate 51 made of a sapphire substrate by a laser, and Ga 56 is deposited on the peeled surface, so it is necessary to etch this. Therefore, wet etching is performed using an aqueous solution of NaOH or dilute nitric acid, and as shown in FIG.
Remove a56. Further, as shown in FIG. 14, the surface is cleaned by oxygen plasma (O ₂ plasma), the adhesive 55 is cut by the dicing groove 57 by dicing, and each light emitting diode 52 is diced, and then the light emitting diode 52 is selectively separated. Do. As the dicing process, dicing using a normal blade and laser processing using the above laser are performed when a narrow cut of 20 μm or less is required. The cut width is the light emitting diode 5 covered with the adhesive 55 in the pixel of the image display device.
Depending on the size of 2, the groove shape is processed by an excimer laser to form the shape of the chip, as an example.

To selectively separate the light emitting diodes 52,
First, as shown in FIG. 15, a thermoplastic adhesive 58 is applied onto the cleaned light emitting diode 52, and a second temporary holding member 59 is superposed thereon. As the second temporary holding member 59, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used for the second temporary holding member 53, and the quartz glass substrate is used in this example. Further, a peeling layer 60 made of polyimide or the like is also formed on the surface of the second temporary holding member 59.

Then, as shown in FIG. 16, the laser is irradiated from the back surface side of the first temporary holding member 53 only to the position corresponding to the light emitting diode 52a to be transferred, and the light emitting diode 52a is subjected to laser ablation. The first
The temporary holding member 53 is peeled off. At the same time, visible or infrared laser light is radiated from the back side of the second temporary holding member 59 to the position corresponding to the light emitting diode 52a which is also the transfer target, and the thermoplastic adhesive 58 in this portion is temporarily removed. Melt and cure. After that, when the second temporary holding member 59 is peeled off from the first temporary holding member 53, as shown in FIG. 17, only the light emitting diode 52a to be transferred is selectively separated, and the second temporary holding member 59 is separated. The image is transferred onto the temporary holding member 59.

After the selective separation, as shown in FIG. 18, resin is applied to cover the transferred light emitting diode 52 to form a resin layer 61. Further, as shown in FIG. 19, the thickness of the resin layer 61 is reduced by oxygen plasma or the like.
As shown in 0, a via hole 62 is formed at a position corresponding to the light emitting diode 52 by laser irradiation. An excimer laser, a harmonic YAG laser, a carbon dioxide gas laser, or the like can be used to form the via hole 62. At this time, the via hole 62 has a diameter of, for example, about 3 to 7 μm.

Next, the anode side electrode pad 63 connected to the p electrode of the light emitting diode 52 through the via hole 62 is formed. The anode side electrode pad 63 is
It is formed by sintering a fine particle type conductive paste. Figure 2
1 is a second temporary holding member 59 for holding the light emitting diode 52.
Transferred to the via hole 6 on the anode electrode (p electrode) side.
2 shows a state in which the anode side electrode pad 63 is formed after forming 2. When forming the electrode pad 63, the above wiring forming method is used. That is, the electrode pad 63 is formed in a self-aligned manner by forming a groove in the resin layer 61 according to the shape of the electrode pad, applying a fine particle type conductive paste, and then sintering this.

After forming the anode side electrode pad 63, the third side is formed to form the cathode side electrode on the opposite surface.
Is transferred to the temporary holding member 64. The third temporary holding member 64 is also made of, for example, quartz glass. At the time of transfer, as shown in FIG. 22, the light emitting diode 52 on which the anode side electrode pad 63 is formed, and further the resin layer 6
An adhesive agent 65 is applied onto the first member 1, and the third temporary holding member 64 is bonded onto the first member. In this state, when laser light is radiated from the back surface side of the second temporary holding member 59, the second temporary holding member 59 made of quartz glass and the polyimide formed on the second temporary holding member 59 are used. Peeling by laser ablation occurs at the interface of the peeling layer 60
The light emitting diode 52 and the resin layer 61 formed on the peeling layer 60 are transferred onto the third temporary holding member 64. FIG. 23 shows a state in which the second temporary holding member 59 is separated.

When forming the cathode side electrode,
After the transfer process, O shown in FIG. _TwoBy plasma treatment
By removing the release layer 60 and the excess resin layer 61,
The contact semiconductor layer (n electrode) of the ion 52 is exposed.
Let The light emitting diode 52 is bonded to the temporary holding member 64.
Held by the agent 65, the light emitting diode 52
The back surface of the is on the n-electrode side (cathode electrode side)
If the electrode pad 66 is formed as shown in FIG.
The pad 66 is electrically connected to the back surface of the light emitting diode 52.
Be done. Even when the electrode pad 66 is formed, the above wiring type is used.
It is preferable to apply the synthetic method. That is, the electrode pack
According to the shape of the electrode pad on the resin layer 61,
The grooves are formed and the fine particle type conductive paste is applied.
After that, this is sintered to form in a self-aligned manner. this
At this time, the electrode pad on the cathode side is, for example, about 60 μm square
Can be

Next, the light emitting diodes 52 solidified by the resin layer 61 and the adhesive 65 are individually cut out to form the resin-formed chip. The cutting may be performed by laser dicing, for example. FIG. 26 shows a cutting process by laser dicing. The laser dicing is performed by irradiating a line beam of a laser, and the resin layer 61 and the adhesive 65 are cut until the third temporary holding member 64 is exposed. By this laser dicing, each light emitting diode 52 is cut out as a resin-formed chip of a predetermined size, and the process goes to a mounting process described later.

In the mounting process, the light emitting diode 52 (resin-formed chip) is separated from the third temporary holding member 64 by a combination of mechanical means (element suction by vacuum suction) and laser ablation. FIG. 27 is a diagram showing that the light emitting diodes 52 arranged on the third temporary holding member 64 are picked up by the suction device 67. At this time, the suction holes 68 are opened in a matrix at the pixel pitch of the image display device, so that a large number of light emitting diodes 52 can be sucked together. The opening diameter at this time is, for example, about 100 μm in diameter, and the openings are formed in a matrix shape with a pitch of 600 μm, and about 300 pieces can be adsorbed at once. The member of the suction hole 68 at this time is, for example, Ni.
The one formed by electroforming or the one obtained by making a hole by etching a metal plate such as SUS is used.
An adsorption chamber 69 is formed at the back of the light emitting diode 5 by controlling the adsorption chamber 69 to a negative pressure.
2 can be adsorbed. The light emitting diode 52 is covered with the resin layer 61 at this stage, and its upper surface is substantially flattened. Therefore, selective adsorption by the adsorption device 67 can be easily promoted.

Incidentally, the suction device 67 is provided with element displacement preventing means so that the light emitting diode 52 (resin-formed chip) can be stably held at a fixed position when the element is sucked by vacuum suction. It is preferable to keep. Figure 2
8 is a suction device 67 provided with a device position shift prevention means 70.
FIG. In this example, the element displacement prevention means 70 is formed as a positioning pin that abuts the peripheral surface of the resin-formed chip, and this is a peripheral surface of the resin-formed chip (specifically, the resin layer 61 cut by laser dicing). By making contact with the cutting surface of the suction device 67.
And the resin-formed chip (that is, the light emitting diode 52) are accurately aligned with each other. The cut surface of the resin layer 61 cut by the laser dicing is not a completely vertical surface but has a taper of about 5 ° to 10 °. Therefore, the positioning pin (element position deviation prevention means 6
If 0) has the same taper, the adsorption device 6
Even if there is a slight displacement between 7 and the light emitting diode 52, it can be corrected immediately.

At the time of peeling the light emitting diode 52, the element suction by the suction device 67 and the peeling of the resin-formed chip by laser ablation are combined so that the peeling proceeds smoothly. Laser ablation is performed by irradiating a laser from the back surface side of the third temporary holding member 64. This laser ablation causes peeling at the interface between the third temporary holding member 64 and the adhesive 65.

FIG. 29 shows the light emitting diode 52 mounted on the second substrate 7.
It is the figure which showed the place which is transferred to 1. Second substrate 71
Is a wiring board having a wiring layer 72, an adhesive layer 73 is previously applied to the second substrate 71 when the light emitting diode 52 is mounted, and the adhesive layer 73 on the lower surface of the light emitting diode 52 is cured, The light emitting diodes 52 can be fixedly arranged on the second substrate 71. At the time of this mounting, the suction chamber 69 of the suction device 67 is in a high pressure state, and the coupled state of the suction device 67 and the light emitting diode 52 by suction is released. The adhesive layer 73 can be composed of a UV curable adhesive, a thermosetting adhesive, a thermoplastic adhesive, or the like. The position where the light emitting diodes 52 are arranged on the second substrate 71 is farther from the arrangement on the temporary holding member 64. Energy for curing the resin of the adhesive layer 73 is supplied from the back surface of the second substrate 71. In the case of a UV curable adhesive, a UV irradiation device is used. In the case of a thermosetting adhesive, only the lower surface of the light emitting diode 52 is cured by infrared heating, and in the case of a thermoplastic adhesive, the adhesive is irradiated by infrared rays or laser. Are melted and bonded.

FIG. 30 is a diagram showing a process of arranging light emitting diodes 74 of another color on the second substrate 71. When the suction device 67 used in FIG. 27 or FIG. 28 is used as it is, and the mounting position on the second substrate 71 is simply shifted to the position of the color, the pixel pitch is fixed and the pixel having a plurality of colors is formed. Can be formed. Here, the light emitting diode 52 and the light emitting diode 74 do not necessarily have to have the same shape. In FIG. 30, the red light emitting diode 74 has a planar structure having no hexagonal pyramidal GaN layer, and its shape is different from that of the other light emitting diodes 52, but at this stage, each light emitting diode 52, 74 is formed.
Is already covered with the resin layer 61 and the adhesive 65 as a resin-formed chip, and the same handling can be realized despite the difference in the element structure.

Then, as shown in FIG. 31, an insulating layer 75 is formed so as to cover the resin-formed chip including these light emitting diodes 52 and 74. As the insulating layer 75, a transparent epoxy adhesive, a UV curable adhesive, polyimide or the like can be used. After forming the insulating layer 75, a wiring forming step is performed. FIG. 32 is a diagram showing a wiring forming process.
Openings 76, 77, 78, 79, 80, 8 in the insulating layer 75
1 is a diagram in which the wirings 82, 83 and 84 for connecting the electrode pads of the anodes and cathodes of the light emitting diodes 52 and 74 and the wiring layer 72 of the second substrate 71 are formed by forming No. 1 in FIG. The openings formed at this time, that is, the via holes, can be enlarged because the area of the electrode pads of the light emitting diodes 52, 74 is increased, and the positional accuracy of the via holes is coarser than that of the via holes formed directly in each light emitting diode. Can be formed with. For example, the via hole at this time is about 6
A diameter of about 20 μm can be formed for a 0 μm square electrode pad. Further, the depth of the via hole has three kinds of depth, one for connecting to the wiring substrate, one for connecting to the anode electrode, and one for connecting to the cathode electrode. Therefore, it is controlled by the number of laser pulses to open the optimum depth. .

Then, as shown in FIG. 33, a protective layer 85 is formed.
And the black mask 86 is formed to complete the panel of the image display device. The protective layer 85 at this time is the same as the insulating layer 75 in FIG. 30, and a material such as a transparent epoxy adhesive can be used. The protective layer 85 is hardened by heating to completely cover the wiring. After this, the driver I
A drive panel will be manufactured by connecting C.

In the method of arranging the light emitting elements as described above, the distance between the elements is already increased at the time when the light emitting diodes 52 are held by the temporary holding members 59 and 64, and the expanded spacing is used. Relatively sized electrode pad 6
3, 66, etc. can be provided. Wiring is performed using the electrode pads 63 and 66 having a relatively large size, so that the wiring can be easily formed even when the size of the final device is significantly larger than the element size. In addition, in the method of arranging the light emitting elements of this example, the electrode pads 63 and 66 can be accurately formed by flattening by covering the periphery of the light emitting diodes 52 with the hardened resin layer 61, and the electrode pads 63 can be formed in a wider area than the elements. , 6
6 can be extended, and the handling becomes easy when the transfer in the next second transfer step is advanced by the suction jig.

[0070]

As is apparent from the above description, according to the wiring and the method for forming the wiring of the present invention, the number of steps can be reduced as compared with the conventional wiring formation using paste,
In addition, it is possible to make the process simpler than the plating method. In addition, the formed wiring has excellent conductivity, and fine wiring can be easily realized.
Similarly, according to the connection hole and the forming method thereof, and the wiring forming body and the forming method of the present invention, it is possible to form the connection hole and the wiring forming body with high reliability by a simple method.

Further, according to the method of forming a display element of the present invention, in addition to the above advantages, good electrodes can be formed even when the light emitting element is modularized with resin, and transportation and mounting on a substrate are easy. It is possible to manufacture a highly reliable display element having a structure as described below. Furthermore, by applying these wiring forming methods and light emitting element forming methods, it is possible to provide a method of manufacturing an image display device which is excellent in productivity and can suppress manufacturing costs.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing an example of a wiring forming method to which the present invention is applied, where (a) is a groove forming step, (b) is a hydrophobic treatment step, (c) is a fine particle type conductive paste applying step,
(D) shows a sintering process, respectively.

FIG. 2 is a schematic cross-sectional view showing another example of a wiring forming method to which the present invention is applied, where (a) is a hydrophobic treatment step, (b) is a photoresist forming step, and (c) is an etching step.
(D) shows a photoresist removing step, (e) shows a fine particle type conductive paste applying step, and (f) shows a sintering step.

FIG. 3 is a schematic cross-sectional view showing an example of a method of forming a connection hole to which the present invention is applied, where (a) is a hydrophobic treatment step, (b) is a photoresist forming step, and (c) is an etching step.
(D) shows a photoresist removing step, (e) shows a fine particle type conductive paste applying step, and (f) shows a sintering step.

FIG. 4 is a schematic cross-sectional view showing an example of a method for forming a wiring forming body to which the present invention is applied, in which (a) is a hydrophobic treatment step,
(B) is a photoresist forming step, (c) is a groove etching step, (d) is a hole etching step, (e) is a photoresist removing step, (f) is a fine particle type conductive paste applying step, and (g) is a baking step. Each of the binding steps is shown.

FIG. 5 is a schematic view showing a method of arranging elements.

FIG. 6 is a schematic perspective view of a resin-formed chip.

FIG. 7 is a schematic plan view of a resin-formed chip.

FIG. 8 is a diagram showing an example of a light emitting element, in which (a) is a cross-sectional view and (b) is a plan view.

FIG. 9 is a schematic cross-sectional view showing a step of joining a first temporary holding member.

FIG. 10 is a schematic cross-sectional view showing a UV adhesive curing step.

FIG. 11 is a schematic sectional view showing a laser ablation step.

FIG. 12 is a schematic cross-sectional view showing a step of separating the first substrate.

FIG. 13 is a schematic cross-sectional view showing a Ga removing step.

FIG. 14 is a schematic cross-sectional view showing an element isolation groove forming step.

FIG. 15 is a schematic cross-sectional view showing a step of joining a second temporary holding member.

FIG. 16 is a schematic cross-sectional view showing a selective laser ablation and UV exposure process.

FIG. 17 is a schematic cross-sectional view showing a step of selectively separating light emitting diodes.

FIG. 18 is a schematic cross-sectional view showing a step of filling with resin.

FIG. 19 is a schematic cross-sectional view showing a resin layer thickness reduction step.

FIG. 20 is a schematic cross-sectional view showing a via forming step.

FIG. 21 is a schematic cross-sectional view showing a step of forming an anode-side electrode pad.

FIG. 22 is a schematic sectional view showing a laser ablation step.

FIG. 23 is a schematic cross-sectional view showing a step of separating a second temporary holding member.

FIG. 24 is a schematic cross-sectional view showing a contact semiconductor layer exposing step.

FIG. 25 is a schematic cross-sectional view showing a step of forming a cathode-side electrode pad.

FIG. 26 is a schematic sectional view showing a laser dicing process.

FIG. 27 is a schematic cross-sectional view showing a selective pickup process by the suction device.

FIG. 28 is a schematic cross-sectional view showing an example of a suction device provided with element position shift prevention means.

FIG. 29 is a schematic cross-sectional view showing the step of transferring to the second substrate.

FIG. 30 is a schematic sectional view showing a step of transferring another light emitting diode.

FIG. 31 is a schematic cross-sectional view showing an insulating layer forming step.

FIG. 32 is a schematic sectional view showing a wiring forming step.

FIG. 33 is a schematic sectional view showing a step of forming a protective layer and a black mask.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 resin layer, 2 groove, 3 hydrophobic layer, 4 fine particle type conductive paste, 5 wiring pattern, 7 hole, 30 resin forming chip, 31 light emitting element, 32 resin, 33,34 electrode pad, 61 resin layer, 63, 66 Electrode pad

   ─────────────────────────────────────────────────── ─── Continued front page    F term (reference) 4M104 DD17 DD20 DD21 DD46 DD51                       DD78                 5F033 MM01 MM02 PP26 QQ37 QQ73                       QQ90 RR06 RR21                 5F041 AA42 DA01 DA34 DA44 DA74                       DA82 FF01

Claims (45)

[Claims] 1. A wiring characterized in that a groove is formed in a resin layer according to a wiring pattern, and a fine particle type conductive paste is sintered in accordance with the groove shape. 2. The wiring according to claim 1, wherein the resin layer other than the groove is subjected to a hydrophobic treatment. 3. The wiring according to claim 2, wherein a nitrogen plasma treatment is applied as the hydrophobic treatment. 4. The wiring according to claim 2, wherein a silicon nitride film is formed as the hydrophobic treatment. 5. A wiring forming method for forming a metal wiring on a resin layer, wherein a groove is formed in the resin layer according to a wiring pattern, and the resin layer other than the groove is subjected to a hydrophobic treatment. After that, a fine particle type conductive paste is applied, and this is sintered to form a metal wiring that follows the groove shape. 6. The wiring forming method according to claim 5, wherein a nitrogen plasma treatment is performed as the hydrophobic treatment. 7. The wiring forming method according to claim 5, wherein a silicon nitride film is formed as the hydrophobic treatment. 8. A wiring forming method for forming a metal wiring on a resin layer, wherein the resin layer is subjected to a hydrophobic treatment to form grooves in the resin layer according to a wiring pattern, and then a fine particle type conductive paste is applied. A wiring forming method, which comprises applying and sintering the metal wiring to form metal wiring that follows the groove shape. 9. The wiring forming method according to claim 8, wherein a nitrogen plasma treatment is performed as the hydrophobic treatment. 10. The wiring forming method according to claim 8, wherein a silicon nitride film is formed as the hydrophobic treatment. 11. A connection hole, characterized in that a hole for connection is formed in the resin layer, and a fine particle type conductive paste is filled in the hole and sintered. 12. The connection hole according to claim 11, wherein a portion of the resin layer other than the hole is subjected to a hydrophobic treatment. 13. The connection hole according to claim 12, wherein a nitrogen plasma treatment is applied as the hydrophobic treatment. 14. The connection hole according to claim 12, wherein a silicon nitride film is formed as the hydrophobic treatment. 15. A connection hole forming method for forming a connection hole filled with a conductive material on a resin layer, wherein a connection hole is formed in the resin layer, and a hydrophobic portion is formed on the resin layer other than the hole. A method of forming a connection hole, which comprises applying a fine-particle-type conductive paste, filling the above-mentioned hole, and sintering this after applying a chemical treatment. 16. The method for forming a connection hole according to claim 15, wherein a nitrogen plasma treatment is performed as the hydrophobic treatment. 17. The method for forming a connection hole according to claim 15, wherein a silicon nitride film is formed as the hydrophobic treatment. 18. A connection hole forming method for forming a connection hole filled with a conductive material on a resin layer, wherein the resin layer is subjected to a hydrophobic treatment to form a connection hole in the resin layer, A method of forming a connection hole, which comprises coating a fine particle type conductive paste, filling the hole, and sintering the paste. 19. The method for forming a connection hole according to claim 18, wherein a nitrogen plasma treatment is performed as the hydrophobic treatment. 20. The method for forming a connection hole according to claim 18, wherein a silicon nitride film is formed as the hydrophobic treatment. 21. A groove is formed in a resin layer according to a wiring pattern and a hole for connection is formed, and a fine particle type conductive paste is sintered according to the groove shape, and a fine particle type conductive paste is formed in the hole. A wiring forming body, which is filled with a paste and is sintered. 22. The wiring formed body according to claim 21, wherein the resin layer other than the groove and the hole is subjected to a hydrophobic treatment. 23. The wiring forming body according to claim 22, wherein a nitrogen plasma treatment is applied as the hydrophobic treatment. 24. The wiring forming body according to claim 22, wherein a silicon nitride film is formed as the hydrophobic treatment. 25. A groove is formed in a resin layer according to a wiring pattern and a hole for connection is formed, and the resin layer in a portion other than the groove and the hole is subjected to a hydrophobic treatment, and then a fine particle type conductive material is formed. A method for forming a wiring forming body, which comprises applying a paste and sintering the paste to form a metal wiring following the groove shape and a connection hole in which the hole is filled with a conductive material. 26. The method of forming a wiring forming body according to claim 25, wherein a nitrogen plasma treatment is performed as the hydrophobic treatment. 27. The method of forming a wiring forming body according to claim 25, wherein a silicon nitride film is formed as the hydrophobic treatment. 28. The method for forming a wiring forming body according to claim 25, wherein the groove is formed prior to the connection hole. 29. The method according to claim 25, wherein the connection hole is formed before the groove. 30. A hydrophobic treatment is applied to a resin layer to form grooves in the resin layer according to a wiring pattern and holes for connection, and then a fine particle type conductive paste is applied and sintered. By doing so, a method for forming a wiring forming body is characterized in that a metal wiring that follows the groove shape and a connection hole in which the hole is filled with a conductive material are formed. 31. The method for forming a wiring forming body according to claim 30, wherein a nitrogen plasma treatment is performed as the hydrophobic treatment. 32. The method for forming a wiring forming body according to claim 30, wherein a silicon nitride film is formed as the hydrophobic treatment. 33. The method of forming a wiring forming body according to claim 30, wherein the groove is formed before the connection hole. 34. The method for forming a wiring forming body according to claim 30, wherein the connection hole is formed before the groove. 35. A light emitting element is embedded in a resin to be made into a chip component, a groove is formed on the surface of the resin, and a fine particle type conductive paste is sintered according to the shape of the groove to form an electrode. Characteristic display element. 36. The display element according to claim 35, wherein the light emitting element has a tip end portion having a tapered shape. 37. The display element according to claim 36, wherein the tip portion has a conical shape or a polygonal pyramid shape. 38. The display element according to claim 35, wherein the light emitting element is a semiconductor element. 39. The display device according to claim 35, wherein the light emitting device is a semiconductor device using a nitride semiconductor. 40. The display element according to claim 35, wherein the light emitting element is a semiconductor LED element. 41. A method of forming a display element, comprising forming a chip component by embedding a light emitting element in a resin, and then forming an electrode on the resin surface, wherein a groove is formed on the resin surface according to a wiring pattern, and other than the groove. A method for forming a display element, characterized in that after applying a hydrophobic treatment to the resin in the portion, a fine particle type conductive paste is applied, and this is sintered to form an electrode following the groove shape. . 42. A method of forming a display element, comprising forming a chip component by embedding a light emitting element in a resin, and then forming electrodes on the resin surface, wherein the resin is subjected to a hydrophobic treatment to form a wiring pattern on the resin surface. A method of forming a display element, comprising forming a groove accordingly, applying a fine particle type conductive paste, and sintering the applied paste to form an electrode following the groove shape. 43. An image display device in which light-emitting elements are embedded in resin and chip-shaped display elements are arranged in a matrix, wherein the display elements have grooves formed on a resin surface and follow the groove shape. An image display device characterized in that a fine particle type conductive paste is sintered to form an electrode. 44. A first transfer step of transferring the light emitting elements so that the light emitting elements are spaced apart from the arranged light emitting elements on the first substrate, and holding the light emitting elements on a temporary holding member, A second transfer step of further separating the light emitting elements held by the temporary holding member onto a second substrate, and a wiring forming step of forming a wiring connected to each of the light emitting elements, In a method of manufacturing an image display device in which light-emitting elements are embedded in resin and chip-shaped display elements are arranged in a matrix, a light-emitting element is embedded in resin to form chip parts, and a wiring pattern is formed on the surface of the resin according to To form a groove,
An image display characterized by forming an electrode following the groove shape by applying a hydrophobic treatment to the resin other than the groove, applying a fine particle type conductive paste, and sintering the paste. Device manufacturing method. 45. A first transfer step of transferring the light emitting elements so that the light emitting elements are spaced apart from the arranged light emitting elements on the first substrate and holding the light emitting elements on a temporary holding member, A second transfer step of further separating the light emitting elements held by the temporary holding member onto a second substrate, and a wiring forming step of forming a wiring connected to each of the light emitting elements, In a method of manufacturing an image display device in which light-emitting elements are embedded in resin and chip-shaped display elements are arranged in a matrix, a light-emitting element is embedded in resin to form chip parts, and a hydrophobic treatment is applied to the resin. After forming a groove on the resin surface according to the wiring pattern, a fine particle type conductive paste is applied and sintered to form an electrode that follows the groove shape. The method of production.