JP2003071728A - Grinding wheel - Google Patents
Grinding wheelInfo
- Publication number
- JP2003071728A JP2003071728A JP2001268875A JP2001268875A JP2003071728A JP 2003071728 A JP2003071728 A JP 2003071728A JP 2001268875 A JP2001268875 A JP 2001268875A JP 2001268875 A JP2001268875 A JP 2001268875A JP 2003071728 A JP2003071728 A JP 2003071728A
- Authority
- JP
- Japan
- Prior art keywords
- segment
- guide
- abrasive
- tip
- grindstone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000945 filler Substances 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 43
- 238000005498 polishing Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 40
- 239000006061 abrasive grain Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 39
- 238000007599 discharging Methods 0.000 abstract description 2
- 239000002826 coolant Substances 0.000 abstract 3
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000498 cooling water Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000004575 stone Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000004567 concrete Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 244000145845 chattering Species 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、石材やコンクリー
ト、陶磁器などの研磨加工を行う研磨砥石に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing whetstone for polishing stone materials, concrete, ceramics and the like.
【0002】[0002]
【従来の技術】石材やコンクリート、陶磁器などの研磨
加工を行う研磨砥石として図5に示すような研磨砥石が
用いられている。図5の(a)は円盤状の基板21の一
面にダイヤモンド砥粒層からなる複数個のセグメントチ
ップ22を放射状に配設した研磨砥石20であり、
(b)は基板31の一面に放射状に配設した複数個のセ
グメントチップ32の周囲に衝撃吸収材兼固着用の充填
保形材33を充填した研磨砥石30であり、(c)は基
板41の一面に放射状に配設した複数個のセグメントチ
ップ42,42aの間の全体に充填保形材43を充填し
た研磨砥石40である。2. Description of the Related Art A polishing grindstone as shown in FIG. 5 is used as a grinding grindstone for grinding stone materials, concrete, ceramics and the like. FIG. 5A shows a polishing grindstone 20 in which a plurality of segment tips 22 made of a diamond abrasive grain layer are radially arranged on one surface of a disk-shaped substrate 21,
(B) is a polishing grindstone 30 in which a plurality of segment chips 32 radially arranged on one surface of a substrate 31 are filled with a filling shape-retaining material 33 that also serves as an impact absorbing material, and (c) is a substrate 41. A polishing grindstone 40 in which a filling shape-retaining material 43 is filled in the entire space between a plurality of segment tips 42, 42a radially arranged on one surface.
【0003】セグメントチップ22,32,42,42
aはダイヤモンド砥粒をメタルボンドで結合した砥粒層
からなり、形状は短冊形や小判形のものである。図5の
(a)の研磨砥石20は、小判形のセグメントチップ2
2を放射状に配列し、セグメントチップ22間を空隙部
として冷却水の排出部としたものである(特開昭62−
176770号公報参照)。同図(b)および(c)の
研磨砥石は、短冊形のセグメントチップ32,42,4
2aの周壁に密着させて樹脂、セメント、セラミックス
などを原料として発泡させた含水性の発泡材を充填保形
材33,43として充填したもので、(b)は充填保形
材33をセグメントチップ32の周壁部のみに充填した
ものであり(特公平6−83963号公報参照)、
(c)は充填保形材43を基板41の全面に充填したも
のである(実公平6−41804号公報参照)。Segment chips 22, 32, 42, 42
Reference character a is an abrasive grain layer in which diamond abrasive grains are bonded by a metal bond, and has a strip shape or an oval shape. The polishing grindstone 20 of FIG. 5A is an oval segment tip 2
2 are arranged in a radial pattern, and the space between the segment chips 22 is used as a cooling water discharge part (Japanese Patent Laid-Open No. 62-62-62).
176770). The grinding wheels shown in FIGS. 2B and 2C are strip-shaped segment chips 32, 42, 4
2A is a filling shape-retaining material 33, 43 filled with a water-containing foaming material which is made to be in close contact with the peripheral wall of 2a and is made of resin, cement, ceramics or the like as a raw material, and FIG. Only the peripheral wall of 32 is filled (see Japanese Patent Publication No. 6-83963).
In (c), the filling shape retention material 43 is filled on the entire surface of the substrate 41 (see Japanese Utility Model Publication No. 6-41804).
【0004】[0004]
【発明が解決しようとする課題】図5の(a)の研磨砥
石20では、研磨機械のガタなどの振動や被研磨材との
接触時の衝撃により被研磨材の欠けが発生しやすいとい
う問題がある。同図の(b)および(c)の研磨砥石3
0,40はこのような問題点について改良を加えたもの
であり、石粉を含む高粘度樹脂またはゴム発泡剤入りセ
メントを充填保形材33,43としてセグメントチップ
32の周壁部または基板41全面に充填して、被研磨材
との接触面積を大きくしたものである。In the polishing grindstone 20 shown in FIG. 5 (a), there is a problem that the material to be polished is likely to be chipped due to vibration such as rattling of a polishing machine or impact at the time of contact with the material to be polished. There is. Polishing grindstone 3 of (b) and (c) of FIG.
Nos. 0 and 40 are improvements made to solve such problems, and high-viscosity resin containing stone powder or cement containing a rubber foaming agent is used as a filling shape-retaining material 33, 43 on the peripheral wall portion of the segment chip 32 or the entire surface of the substrate 41. It is filled to increase the contact area with the material to be polished.
【0005】しかしながら、図5(b)の研磨砥石30
は、充填保形材33がセグメントチップ32の周壁に密
着しているために、セグメントチップ32の切れ味が損
なわれ、また研磨点への冷却水の供給も悪くなる。ま
た、充填保形材33の振動がセグメントチップ32に伝
播し、セグメントチップ32で加工するときに被研磨材
にビビリが発生する。図5(c)の研磨砥石40は、充
填保形材43が基板41の全面に充填されているので被
研磨材との接触面積が大きすぎ、抵抗が大きく切れ味が
低下する。また、研磨点への冷却水の供給が悪く、切粉
の排出も悪い。However, the grinding wheel 30 shown in FIG.
In addition, since the filling shape retention material 33 is in close contact with the peripheral wall of the segment tip 32, the sharpness of the segment tip 32 is impaired and the supply of cooling water to the polishing point is also deteriorated. Further, the vibration of the filling shape retention material 33 is propagated to the segment tip 32, and chattering occurs in the material to be polished when processing with the segment tip 32. In the polishing grindstone 40 of FIG. 5C, since the filling shape-retaining material 43 is filled on the entire surface of the substrate 41, the contact area with the material to be polished is too large, the resistance is large, and the sharpness is reduced. Further, the supply of cooling water to the polishing point is poor, and the discharge of chips is also poor.
【0006】本発明が解決すべき課題は、回転円盤型研
磨砥石で研磨加工するときの被研磨材の欠けを防止する
とともに、切れ味を向上させ、かつ研磨点への冷却水の
供給性と切粉の排出性を良好にすることにある。The problem to be solved by the present invention is to prevent chipping of a material to be polished when polishing with a rotary disk type polishing grindstone, improve sharpness, and supply and cool the cooling water to a polishing point. It is to improve the powder discharge property.
【0007】[0007]
【課題を解決するための手段】本発明の研磨砥石は、円
盤状の基板の一面に砥粒層からなる複数個のセグメント
チップを放射状に配設した研磨砥石において、前記セグ
メントチップの砥石回転方向前側の周壁または砥石回転
方向前側と後側の両周壁から間隔をおいて前記周壁に対
面するガイドチップを配設したことを特徴とする。A polishing grindstone of the present invention is a polishing grindstone in which a plurality of segment chips composed of an abrasive grain layer are radially arranged on one surface of a disk-shaped substrate, and the direction of rotation of the segment chips A guide chip facing the peripheral wall on the front side or both peripheral walls on the front side and the rear side in the grindstone rotating direction is provided so as to face the peripheral wall.
【0008】本発明の研磨砥石においては、充填保形材
が基板の全面に充填された図5(c)の研磨砥石40に
比べると被研磨材との接触面積が小さくなるので抵抗も
小さくなり、切れ味が向上する。さらに、ガイドチップ
をセグメントチップの回転方向前側または前後側の周壁
から離して配設しているので、この間隙部分が冷却水の
通路および切粉の排出路となり、研磨点への冷却水の供
給性および切粉の排出性が良好となる。In the polishing grindstone of the present invention, the contact area with the material to be polished is smaller than that of the polishing grindstone 40 of FIG. , Sharpness is improved. Further, since the guide tip is arranged away from the peripheral wall on the front side or the front side on the front side in the rotation direction of the segment tip, this gap portion serves as a passage for cooling water and a discharge passage for cutting chips, and supplies cooling water to the polishing point. And good chip discharge performance.
【0009】ここで、セグメントチップの周壁とガイド
チップの間隙は2〜6mmとするのが望ましい。この間
隙が2mm未満であると冷却水の通路および切粉の排出
路として狭すぎ、良好な冷却水の供給性および切粉の排
出性が得られない。間隙が6mmより大きくなると被研
磨材との接触時の被研磨材とセグメントチップの欠けの
発生を防止する機能が不十分となる。Here, it is desirable that the gap between the peripheral wall of the segment tip and the guide tip is 2 to 6 mm. If this gap is less than 2 mm, the passage of cooling water and the discharge passage of chips are too narrow, and good supply of cooling water and discharge property of chips cannot be obtained. If the gap is larger than 6 mm, the function of preventing the occurrence of chipping of the material to be polished and the segment chips at the time of contact with the material to be polished becomes insufficient.
【0010】ガイドチップの主材としてはエポキシ系樹
脂、シリコン系樹脂、ウレタン系樹脂、アクリル系樹脂
などの樹脂が適しており、とくに強度と後述する充填材
と研磨材の分散性の点からエポキシ系樹脂が最適であ
る。この主材としての樹脂に充填材と研磨材を添加する
ことができる。充填材としては樹脂の中空フィラーまた
は粒径が500μm以下のガラスを用いることができ
る。充填材の添加によりガイドチップの摩耗を促進させ
ることができ、ボンド層後退による切刃の形成を容易に
するという効果がある。また、充填材として中空フィラ
ーを用いた場合は、ガイドチップと被研磨材との接触面
積を小さくして接触負荷を小さくし、また、中空部が切
粉のチップポケットとなって切粉の排出が良くなる、と
いう効果がある。A resin such as an epoxy resin, a silicone resin, a urethane resin or an acrylic resin is suitable as a main material of the guide chip. Particularly, epoxy is preferable from the viewpoint of strength and dispersibility of a filler and an abrasive, which will be described later. Resins are most suitable. A filler and an abrasive can be added to the resin as the main material. As the filler, a hollow filler of resin or glass having a particle size of 500 μm or less can be used. The addition of the filler has the effect of promoting the wear of the guide tip and facilitating the formation of the cutting edge due to the receding of the bond layer. When a hollow filler is used as the filling material, the contact area between the guide tip and the material to be polished is reduced to reduce the contact load, and the hollow portion becomes a chip pocket for cutting chips and discharge of chips. Has the effect of improving.
【0011】研磨材としては、平均粒径が砥粒層に使用
されている砥粒の平均粒径より小さい二次砥粒として、
炭化珪素質(GC、C)、アルミナ質(A、WA)など
の砥粒を用いることができる。二次砥粒の添加により、
加工時に脱落した二次砥粒が砥粒層のボンド層を摩耗さ
せ、加工しながら砥粒層をドレッシングするという効果
がある。二次砥粒の粒径が砥粒層の砥粒の粒径より大き
いと、前記ボンド層の摩耗が大きくなりすぎ、砥粒層の
砥粒まで脱落させてしまう。逆に二次砥粒の粒径が小さ
すぎると前記ボンド層の摩耗効果が期待できないので、
二次砥粒の粒径は砥粒層の砥粒粒径の1/2から同程度
とするのが望ましい。充填材と研磨材は単独で使用して
もよく、また両者を併用してもよい。主材である樹脂に
対する充填材と研磨材の添加割合は5〜50%が適量で
ある。添加割合が5%未満では上記の効果がなく、50
%を超えると中空フィラーの場合はガイドチップ自体が
強度不足となり、研磨材の場合は硬質化する。As the abrasive, secondary abrasive grains having an average grain size smaller than the average grain size of the abrasive grains used in the abrasive grain layer,
Abrasive grains such as silicon carbide (GC, C) and alumina (A, WA) can be used. By adding secondary abrasive grains,
There is an effect that the secondary abrasive grains that fall off during processing wear the bond layer of the abrasive particle layer and dress the abrasive particle layer while processing. If the particle size of the secondary abrasive particles is larger than the particle size of the abrasive particles of the abrasive layer, the wear of the bond layer becomes too large, and the abrasive particles of the abrasive layer are also dropped. Conversely, if the particle size of the secondary abrasive is too small, the wear effect of the bond layer cannot be expected,
It is desirable that the grain size of the secondary abrasive grains be about 1/2 to about the same as the grain size of the abrasive grain layer. The filler and the abrasive may be used alone or in combination. A suitable amount of the filler and the abrasive added to the resin as the main material is 5 to 50%. If the addition ratio is less than 5%, the above effect does not occur, and
When the content exceeds%, the strength of the guide chip itself becomes insufficient in the case of the hollow filler, and becomes hard in the case of the abrasive.
【0012】ガイドチップの基板周方向の幅は5〜10
mmとするのが望ましい。この幅が5mmより小さいと
加工面の平面度が悪くなり、10mmより大きいと接触
面積が大きすぎて研磨加工の妨げとなる。ガイドチップ
の高さは研磨用のセグメントチップと同じ高さとする。The width of the guide chip in the substrate circumferential direction is 5 to 10
It is desirable to set to mm. If this width is less than 5 mm, the flatness of the machined surface is poor, and if it is greater than 10 mm, the contact area is too large, which hinders polishing. The height of the guide tip is the same as that of the segment tip for polishing.
【0013】ここで、研磨用のセグメントチップを基板
の外周部分と内周部分とにそれぞれ放射状に配設する場
合は、上記のガイドチップは外周部分に配設したセグメ
ントチップに対して配設する。この場合、ガイドチップ
の基板半径方向の内側部分と内周部分のセグメントチッ
プの基板半径方向の外側部分とが基板円周方向の領域で
重なるように配設するのが好ましい。このような配設と
することにより、外周部分のセグメントとともに内周部
分のセグメントも基板半径方向にみた偏磨耗が抑制され
る。Here, when the segment chips for polishing are radially arranged on the outer peripheral portion and the inner peripheral portion of the substrate, the guide chips are arranged on the segment chips arranged on the outer peripheral portion. . In this case, it is preferable that the inner portion of the guide chip in the radial direction of the substrate and the inner peripheral portion of the segment chip in the radial direction of the substrate are arranged so as to overlap each other in the circumferential region of the substrate. With such an arrangement, uneven wear of the outer peripheral segment and the inner peripheral segment as viewed in the radial direction of the substrate is suppressed.
【0014】セグメントチップに対するガイドチップの
配設は、セグメントチップの砥石回転方向前側の周壁ま
たは砥石回転方向前側と後側の両周壁に対面させて配設
するのを基本とするが、セグメントチップの基板半径方
向における内側の周壁や外側の周壁に対面した位置にも
配設することができる。この場合、基板半径方向内側の
周壁に対面させて配設したガイドチップの高さは、冷却
水の供給の妨げとならないようにするために、セグメン
トチップの高さより低くするか、または一部を開放した
ものとするのがよい。The guide chip is arranged with respect to the segment tip in such a manner that it is arranged so as to face the peripheral wall on the front side in the grindstone rotation direction of the segment tip or both the front and rear peripheral walls in the grindstone rotation direction. It can also be arranged at a position facing the inner peripheral wall and the outer peripheral wall in the radial direction of the substrate. In this case, the height of the guide chip disposed so as to face the peripheral wall on the inner side in the radial direction of the substrate is lower than the height of the segment chip or a part of the guide chip is arranged so as not to hinder the supply of cooling water. It should be open.
【0015】[0015]
【発明の実施の形態】図1は本発明の実施形態における
研磨砥石を示す図であり、(a)はガイドチップの配置
を示す平面図、(b)は(a)のガイドチップをA方向
からみた図である。FIG. 1 is a view showing a polishing grindstone according to an embodiment of the present invention. FIG. 1A is a plan view showing the arrangement of guide tips, and FIG. 1B is a view showing the guide tips of FIG. FIG.
【0016】本実施形態の研磨砥石10は、円盤状の基
板1の一面に、砥粒層からなる研磨用のセグメントチッ
プ2を基板外周部分に、同じく研磨用のセグメントチッ
プ3を基板内周部分にそれぞれ放射状に配設し、セグメ
ントチップ2の砥石回転方向(図中、矢印Dで示す)の
前側と後側の両周壁から間隔をおいて、周壁に対面する
ガイドチップ4を配設し、さらにセグメントチップ2の
基板半径方向における内側の周壁に対面した位置にガイ
ドチップ5を配設した研磨砥石である。The polishing grindstone 10 of this embodiment has a disk-shaped substrate 1 on one surface of which abrasive segment chips 2 for polishing are provided on the outer peripheral portion of the substrate, and a similar segment chip 3 for polishing is provided on the inner peripheral portion of the substrate. Respectively, and the guide tips 4 facing the peripheral wall are provided at intervals from both the front and rear peripheral walls of the segment tip 2 in the grindstone rotating direction of the segment tip 2 (indicated by arrow D in the figure), Further, it is a polishing grindstone in which a guide chip 5 is arranged at a position facing the inner peripheral wall of the segment chip 2 in the radial direction of the substrate.
【0017】基板1は外径203mm、厚さ20mmの
樹脂製の基板である。セグメントチップ2は、平均粒径
80μmのダイヤモンド砥粒とメタルボンドからなる砥
粒層を短冊状に形成したもので、基板半径方向の長さ4
3mm、幅8mm、高さ12mmである。セグメントチ
ップ3は、セグメントチップ2と同じ砥粒層を短冊状に
形成したもので、基板半径方向の長さ30mm、幅6m
m、高さ12mmである。The substrate 1 is a resin substrate having an outer diameter of 203 mm and a thickness of 20 mm. The segment tip 2 is formed by forming an abrasive grain layer composed of diamond abrasive grains having an average grain size of 80 μm and a metal bond into a strip shape, and has a length 4 in the radial direction of the substrate.
It is 3 mm, width 8 mm, and height 12 mm. The segment tip 3 has the same abrasive grain layer as the segment tip 2 formed in a strip shape, and has a length of 30 mm and a width of 6 m in the radial direction of the substrate.
m, height 12 mm.
【0018】ガイドチップ4は、エポキシ系樹脂を主材
とし、これに充填材としての外径50μmのガラス中空
フィラーを主材である樹脂に対し20重量%の割合で添
加し、研磨材としてのGC砥粒を10重量%の割合で添
加したもので、基板半径方向の長さ56mm、幅7m
m、高さ12mmである。ガイドチップ5はガイドチッ
プ4と同材質であり、基板周方向の長さ14mm、幅7
mm、高さ3mmである。The guide chip 4 has an epoxy resin as a main material, and a hollow glass filler having an outer diameter of 50 μm as a filler is added thereto at a ratio of 20% by weight with respect to the resin as the main material, and is used as an abrasive material. GC abrasive grains are added at a ratio of 10% by weight, and the length in the radial direction of the substrate is 56 mm and the width is 7 m.
m, height 12 mm. The guide chip 5 is made of the same material as the guide chip 4, and has a length of 14 mm and a width of 7 in the circumferential direction of the substrate.
mm and height 3 mm.
【0019】ガイドチップ4は、セグメントチップ2の
砥石回転方向前側および後側の周壁から4mm離して配
設し、ガイドチップ5は、セグメントチップ2の基板半
径方向における内側の周壁から4mm離して配設してい
る。The guide tip 4 is arranged at a distance of 4 mm from the peripheral wall on the front and rear sides of the segment tip 2 in the grindstone rotation direction, and the guide chip 5 is arranged at a distance of 4 mm from the inner peripheral wall of the segment tip 2 in the radial direction of the substrate. I have set up.
【0020】このようにセグメントチップ2の周壁から
離してガイドチップ4およびガイドチップ5を配設して
いるので、この間隙Gの部分が冷却水の通路および切粉
の排出路となり、研磨点への冷却水の供給性および切粉
の排出性が良好となる。また、ガイドチップ4の基板半
径方向の内側部分と内周部分のセグメントチップ3の基
板半径方向の外側部分とが基板円周方向の領域で重なる
ように配設されているので、基板外周部分のセグメント
チップ2とともに基板内周部分のセグメントチップ3も
基板半径方向にみた偏磨耗が抑制され、外周部分と内周
部分のセグメントチップの摩耗が均一化されて、基板の
振動や被研磨材の削り残しを防止することができる。Since the guide tip 4 and the guide tip 5 are arranged away from the peripheral wall of the segment tip 2 in this way, the portion of the gap G serves as a passage for cooling water and a passage for discharging chips, and reaches the polishing point. The cooling water supply property and the chip discharge property are improved. Further, since the inner part of the guide chip 4 in the radial direction of the substrate and the outer part of the segment chip 3 of the inner peripheral part in the radial direction of the substrate are arranged so as to overlap in the region in the circumferential direction of the substrate, the peripheral part of the substrate is Not only the segment chips 2 but also the segment chips 3 on the inner peripheral portion of the substrate are prevented from being worn unevenly in the radial direction of the substrate, the wear of the segment chips on the outer peripheral portion and the inner peripheral portion is made uniform, and vibration of the substrate and scraping of the material to be polished are performed. Leaving can be prevented.
【0021】なお、上記の実施形態においてはガイドチ
ップ4および5をセグメントチップ2の砥石回転方向前
側と後側および基板半径方向の内側の周壁に対面した位
置に配設しているが、ガイドチップの配設はこの例に限
られるものではなく、図2に示すような配設とすること
もできる。同図の(a)はガイドチップ4をセグメント
チップ2の砥石回転方向前側のみに配設した例であり、
同図の(b)はガイドチップ4をセグメントチップ2の
砥石回転方向前側に、ガイドチップ5を基板半径方向の
内側にそれぞれ配設した例であり、同図の(c)はガイ
ドチップ4をセグメントチップ2の砥石回転方向前側と
後側に、ガイドチップ5を基板半径方向の内側と外側に
それぞれ配設した例である。In the above embodiment, the guide chips 4 and 5 are arranged at the positions facing the front and rear sides of the segment chip 2 in the grindstone rotation direction and the inner peripheral wall in the radial direction of the substrate. However, the arrangement is not limited to this example, and the arrangement shown in FIG. 2 may be adopted. (A) of the figure is an example in which the guide tip 4 is arranged only on the front side of the segment tip 2 in the grindstone rotation direction,
(B) of the figure shows an example in which the guide tip 4 is arranged on the front side of the segment tip 2 in the grindstone rotation direction, and the guide tip 5 is arranged on the inner side in the radial direction of the substrate. (C) of the figure shows the guide tip 4 This is an example in which the guide chips 5 are arranged on the front side and the rear side of the segment tip 2 in the grindstone rotation direction, respectively, inside and outside in the radial direction of the substrate.
【0022】〔試験例〕図1に示すようにセグメントチ
ップ2,3を基板に配設し、セグメントチップ2の周壁
に対面するガイドチップ4,5を配設した研磨砥石で、
ガイドチップの樹脂に充填材として樹脂の中空フィラー
を樹脂:中空フィラーを8:2の割合で添加した研磨砥
石(発明品1)と、ガイドチップの樹脂に研磨材として
GCを樹脂:GCを9:1の割合で添加した研磨砥石
(発明品2)、および図5(c)に示した従来の研磨砥
石(従来品)を用い、以下の条件で研磨加工試験を行っ
た。[Test Example] As shown in FIG. 1, a polishing grindstone in which segment chips 2 and 3 are arranged on a substrate, and guide chips 4 and 5 facing the peripheral wall of the segment chip 2 are arranged,
Abrasive grindstone (invention 1) in which resin: hollow filler of resin: hollow filler was added to the resin of the guide tip at a ratio of 8: 2, and GC: resin: GC: 9 A polishing process test was conducted under the following conditions using the polishing grindstone (Invention product 2) added at a ratio of 1: 1 and the conventional grinding grindstone (conventional product) shown in FIG. 5C.
【0023】 試験条件 加工機械:石材加工用自動研磨機 被研磨材:材質 御影石 寸法 800mm×500mm[0023] Test condition Processing machine: Automatic polishing machine for stone processing Material to be polished: Material Granite Dimensions 800 mm x 500 mm
【0024】試験結果を図3および図4に示す。図3は
切れ味を示す図で、切れ味を表す指標である消費電力
を、従来品を100とした相対的な指数で示す。図3か
らわかるように、発明品1,2の砥石は従来品の砥石に
比べて切れ味指数は1.8倍程度向上し、とくに研磨材
としてGCを添加した発明品2の砥石は、切れ味が優れ
ている。The test results are shown in FIGS. 3 and 4. FIG. 3 is a diagram showing sharpness, and shows power consumption, which is an index showing sharpness, as a relative index with the conventional product as 100. As can be seen from FIG. 3, the grindstones of the invention products 1 and 2 have a sharpness index improved by about 1.8 times as compared with the conventional grindstone, and in particular, the grindstone of the invention product 2 to which GC is added as an abrasive has a sharpness. Are better.
【0025】図4は外側セグメントチップと内側セグメ
ントチップの摩耗度合いを示す図で、研削後のセグメン
トチップの残存高さが約8mmとなる程度まで使用して
加工した後の外側セグメントと内側セグメントの高さを
示している。図4からわかるように、発明品1,2の砥
石は、内側セグメントチップ、外側セグメンチップとも
加工後のチップ高さが8.2mm程度で高さに差がなく
均一に摩耗していることがわかる。従来品の砥石は、内
側のセグメントチップは8.4mm程度であるが外側の
セグメントチップは9mmであり、内高にセグメントチ
ップが摩耗していることがわかる。このチップ高さの差
が砥石の振動および被研磨材の削り残しを誘発する原因
となる。FIG. 4 is a view showing the degree of wear of the outer segment tip and the inner segment tip. The outer segment and the inner segment after being machined by using the segment tip after grinding until the residual height becomes about 8 mm. Shows the height. As can be seen from FIG. 4, in both the inner segment tip and the outer segment tip, the grindstones of the invention products 1 and 2 have the tip height after machining of about 8.2 mm, and there is no difference in height, and they are uniformly worn. Recognize. In the conventional grindstone, the inner segment tip is about 8.4 mm, but the outer segment tip is 9 mm, which shows that the segment tip is worn to the inner height. This difference in chip height causes vibration of the grindstone and uncut residue of the material to be polished.
【0026】[0026]
【発明の効果】本発明により以下の効果を奏することが
できる。According to the present invention, the following effects can be obtained.
【0027】(1)放射状に配設した研磨用セグメント
チップの砥石回転方向前側の周壁または前側と後側の両
周壁から間隔をおいてガイドチップを配設することによ
り、基板の全面に充填保形材を充填した従来の研磨砥石
に比べて被研磨材との接触面積が小さくなるので抵抗も
小さくなり、切れ味が向上する。さらに、ガイドチップ
をセグメントチップの回転方向前側または前後側の周壁
から離して配設しているので、この間隙部分が冷却水の
通路および切粉の排出路となり、研磨点への冷却水の供
給性および切粉の排出性が良好となる。(1) By arranging the guide chips at intervals from the peripheral wall on the front side or both peripheral walls on the front side and the rear side of the grinding segment chips radially arranged in the grindstone rotating direction, the entire surface of the substrate is filled and maintained. The contact area with the material to be polished is smaller than that of a conventional grinding wheel filled with a shape material, so that the resistance is also small and the sharpness is improved. Further, since the guide tip is arranged away from the peripheral wall on the front side or the front side on the front side in the rotation direction of the segment tip, this gap portion serves as a passage for cooling water and a discharge passage for cutting chips, and supplies cooling water to the polishing point. And good chip discharge performance.
【0028】(2)セグメントチップの周壁とガイドチ
ップの間隙を適正な大きさとすることにより、良好な冷
却水の供給性および切粉の排出性が得られるとともに、
被研磨材との接触時の被研磨材とセグメントチップの欠
けの発生を防止することができる。(2) By appropriately setting the gap between the peripheral wall of the segment tip and the guide tip, good supply of cooling water and discharge of chips can be obtained, and
It is possible to prevent chipping of the material to be polished and the segment chips when the material to be polished comes into contact with the material to be polished.
【0029】(3)ガイドチップの材質を樹脂とし、こ
れに充填材を添加することによりガイドチップの摩耗を
促進させることができ、ボンド層後退による切刃の形成
を容易にするという効果がある。また研磨材を添加する
ことにより、加工時に脱落した二次砥粒が砥粒層のボン
ド層を摩耗させ、加工しながら砥粒層をドレッシングす
るという効果がある。(3) The guide tip is made of a resin, and the filler is added to the resin to promote the wear of the guide tip, which has the effect of facilitating the formation of the cutting edge due to the receding of the bond layer. . In addition, the addition of the abrasive has the effect that the secondary abrasive grains that drop off during processing abrade the bond layer of the abrasive grain layer and dress the abrasive grain layer during processing.
【図1】 本発明の実施形態における研磨砥石を示す図
であり、(a)はガイドチップの配置を示す平面図、
(b)は(a)のガイドチップをA方向からみた図であ
る。FIG. 1 is a diagram showing a polishing grindstone according to an embodiment of the present invention, in which (a) is a plan view showing an arrangement of guide tips;
(B) is the figure which looked at the guide tip of (a) from the A direction.
【図2】 ガイドチップの別の配置例を示す図である。FIG. 2 is a diagram showing another arrangement example of guide chips.
【図3】 加工試験結果を示す図である。FIG. 3 is a diagram showing a processing test result.
【図4】 加工試験結果を示す図である。FIG. 4 is a diagram showing a processing test result.
【図5】 従来の研磨砥石の例を示す図である。FIG. 5 is a diagram showing an example of a conventional grinding wheel.
1 基板 2,3 セグメントチップ 4,5 ガイドチップ 10 研磨砥石 D 砥石回転方向 G 間隙 1 substrate 2,3 segment tip 4,5 guide tip 10 Polishing whetstone D Grindstone rotation direction G gap
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 3C063 AA02 AB05 BA03 BA08 BB02 BC02 FF06 FF16 FF20 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 3C063 AA02 AB05 BA03 BA08 BB02 BC02 FF06 FF16 FF20
Claims (4)
数個のセグメントチップを放射状に配設した研磨砥石に
おいて、前記セグメントチップの砥石回転方向前側の周
壁または砥石回転方向前側と後側の両周壁から間隔をお
いて前記周壁に対面するガイドチップを配設したことを
特徴とする研磨砥石。1. A polishing grindstone in which a plurality of segment chips composed of an abrasive grain layer are radially arranged on one surface of a disk-shaped substrate, wherein a peripheral wall of the segment chips on the front side in the grindstone rotating direction or front and rear sides in the grindstone rotating direction. A polishing grindstone, characterized in that guide chips facing the peripheral walls are provided at a distance from both peripheral walls.
ップの間隙が2〜6mmである請求項1記載の研磨砥
石。2. The polishing grindstone according to claim 1, wherein a gap between the peripheral wall of the segment tip and the guide tip is 2 to 6 mm.
材のいずれかまたは両方を添加したものである請求項1
または2記載の研磨砥石。3. The guide chip is made by adding one or both of a filler and an abrasive to a resin.
Alternatively, the grinding wheel according to item 2.
ィラーであり、前記研磨材が砥粒層の砥粒平均粒径より
小さい平均粒径の砥粒である請求項3記載の研磨砥石。4. The polishing grindstone according to claim 3, wherein the filler is a hollow filler of glass or resin, and the abrasive is an abrasive having an average particle size smaller than the average particle size of the abrasive grains in the abrasive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001268875A JP2003071728A (en) | 2001-09-05 | 2001-09-05 | Grinding wheel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001268875A JP2003071728A (en) | 2001-09-05 | 2001-09-05 | Grinding wheel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003071728A true JP2003071728A (en) | 2003-03-12 |
Family
ID=19094796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001268875A Pending JP2003071728A (en) | 2001-09-05 | 2001-09-05 | Grinding wheel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003071728A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260954A (en) * | 2008-03-25 | 2009-11-05 | Panasonic Corp | Imaging apparatus |
| JP2009267688A (en) * | 2008-04-24 | 2009-11-12 | Toshiba Corp | Ultrasonic probe, method for manufacturing ultrasonic probe and ultrasonograph |
| WO2018008551A1 (en) * | 2016-07-08 | 2018-01-11 | スピードファム株式会社 | Abrasive material |
| JP2019093544A (en) * | 2015-03-04 | 2019-06-20 | サンーゴバン アブレイシブズ,インコーポレイティド | Abrasive article and method of use |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5450289U (en) * | 1977-09-14 | 1979-04-07 | ||
| JPH05138541A (en) * | 1991-11-25 | 1993-06-01 | Kawada Eng:Yugen | Wet polishing grinding wheel |
-
2001
- 2001-09-05 JP JP2001268875A patent/JP2003071728A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5450289U (en) * | 1977-09-14 | 1979-04-07 | ||
| JPH05138541A (en) * | 1991-11-25 | 1993-06-01 | Kawada Eng:Yugen | Wet polishing grinding wheel |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260954A (en) * | 2008-03-25 | 2009-11-05 | Panasonic Corp | Imaging apparatus |
| JP2009267688A (en) * | 2008-04-24 | 2009-11-12 | Toshiba Corp | Ultrasonic probe, method for manufacturing ultrasonic probe and ultrasonograph |
| JP2019093544A (en) * | 2015-03-04 | 2019-06-20 | サンーゴバン アブレイシブズ,インコーポレイティド | Abrasive article and method of use |
| JP2021006360A (en) * | 2015-03-04 | 2021-01-21 | サンーゴバン アブレイシブズ,インコーポレイティド | Abrasive article and method of use |
| JP7100683B2 (en) | 2015-03-04 | 2022-07-13 | サンーゴバン アブレイシブズ,インコーポレイティド | Polished articles and usage |
| WO2018008551A1 (en) * | 2016-07-08 | 2018-01-11 | スピードファム株式会社 | Abrasive material |
| JP2018001392A (en) * | 2016-07-08 | 2018-01-11 | スピードファム株式会社 | Abrasive |
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