JP2003069108A - GMR element and magnetoresistive head using the same and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-performance magnetoresistive head compatible with a narrow gap, a method of manufacturing the same, and a G suitable for the head.
An MR element is provided. SOLUTION: A GMR element 4 exhibiting a magnetoresistance effect, and a magnetic flux guide 5 for drawing a leakage magnetic flux from a magnetic recording medium into the GMR element are provided. The GMR element is disposed so as to retreat from the medium facing surface, and the magnetic flux guide is disposed between the medium facing surface and the GMR element. The film thickness of the magnetic flux guide is thick at a portion where the magnetic flux guide and the GMR element are joined, and thin at a portion exposed at the medium facing surface. G having a plurality of double spin valve structures
With the MR element, it is possible to compensate for a decrease in output that is a concern in the head structure.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin valve magnetoresistive thin film head used as a reproducing head for a magnetic disk device (HDD device) or the like. In particular, C
The present invention relates to a GMR element using a PP mode and an improvement of a magnetic flux guide type magnetoresistive head using the GMR element.

[0002]

2. Description of the Related Art In recent years, in recording on a magnetic recording medium such as an HDD device, the necessity for improving the processing speed and increasing the recording capacity has increased, and efforts to increase the recording density have been strengthened. Therefore, a reproducing head having a smaller reproducing track width and a larger reproducing output than that of the conventional thin film magnetic head has been developed. For example, multi-layer film GMR
In the CPP mode, in which a current flows perpendicularly to the film surface,
Compared with the conventional CIP mode in which an electric current is passed parallel to the film surface,
It has been reported that the resistance change is more than doubled.
EE Trans. Mag., VOL. 31, No.6, NOVEMBER 1995 Robe
rt Rottmayer et al., "A New Design For An Ultra-Hi
gh Density Magnetic Recording Head Using A GMR Sen
"sor In The CPP Mode" proposes a new structure that operates in the CPP mode. In addition, special table H11-5099
Japanese Patent Publication No. 56 proposes a new structure of a spin valve type instead of the conventional multilayer GMR sensor.

A conventional shield type thin film magnetic head (hereinafter simply referred to as a thin film magnetic head) will be described below with reference to the drawings.

9 and 10 show a conventional thin film magnetic head.
FIG. 9 is a perspective view and FIG. 10 is a thin film magnetic
Head sliding surface facing the magnetic recording medium of the head (hereinafter
It is a front view seen from the side (referred to as the medium facing surface). Figure
9 or as shown in FIG.
AL on the lower shield layer 57 made of magnetic material ₂
O₃Lower gap insulating part 5 using non-magnetic insulating material such as
8 is deposited. On top of that, the reproducing head element section 59
Has been formed. Touching both ends of the reproducing head element 59
A pair of left and right vertical bias layers 60 are formed and
Further, a pair of left and right electrode lead layers 61 are formed.
It The read head element portion 59 includes a lower shield layer 57 and
And a position to be sandwiched between common shield layers 62 described later.
Has been done. Reproduction head element part 59 and electrode lead layer
A material similar to that of the lower gap insulating portion 58 is formed on the upper surface of 61.
Form an upper gap insulating portion 63 (see the drawing).
For clarity, only the position is shown and the shape is not shown.
Omitted). Read head element through the upper gap insulating portion 63
The same as the lower shield layer 57 so as to face the portion 59.
The common shield layer 62 using the soft magnetic material is formed.
It With the above elements, the magnetoresistive thin film magnetic
A head portion 64 is formed.

Further, AL ₂ is formed on the common shield layer 62.
The recording gap layer 65 is formed using a nonmagnetic insulating material such as O ₃ . Further, an upper magnetic pole 66 made of a soft magnetic material is formed so as to face the common shield layer 62 via the recording gap layer 65 and contact the common shield layer 62 at the rear portion. A winding coil 67 is provided so as to surround the upper magnetic pole 66 in a portion in contact with the common shield layer 62, and a recording induction type thin film magnetic head portion 68 is formed. As described above, the common shield layer 62 is
It has a function having both the shield function of the reproducing magnetoresistive thin film magnetic head portion and the lower magnetic pole function of the recording inductive thin film magnetic head portion.

When a recording current is supplied to the winding coil 67, a recording magnetic field is generated between the upper magnetic pole 66 of the recording inductive thin film magnetic head portion 68 and the common shield layer 62, and the recording magnetic field opposes the recording gap layer 65. Leakage magnetic flux is generated between the upper magnetic pole 66 and the common shield layer 62, and a recording signal is recorded on the magnetic recording medium. Further, the magnetic field of the signal recorded on the magnetic recording medium is reproduced by the reproducing magnetoresistive thin film magnetic head unit 64, and the reproduced signal corresponding to the resistance change by the reproducing head element 59 is detected from the terminal of the electrode lead layer 61. .

Next, a conventional shield type CPP thin film magnetic head (hereinafter, simply referred to as CPP magnetic head) will be described with reference to the drawings. 11 and 12 show the conventional C
FIG. 12 is a diagram showing a PP magnetic head, FIG. 11 is a schematic perspective view,
FIG. 12 is a schematic front view of the CPP magnetic head as viewed from the medium facing surface side.

As shown in FIG. 11 or FIG.
An insulating layer 71 made of AL ₂ O ₃ or the like is formed on a lower shield layer 70 made of a soft magnetic material such as permalloy. A lower electrode lead layer 72 is formed thereon,
A CPP reproducing head element portion 73 is formed thereon, and an upper electrode lead layer 74 is formed thereon. Thereby, the CPP reproducing head element portion 73 is sandwiched by the lower electrode lead layer 72 and the upper electrode lead layer 74. An insulating gap 75 made of the same material as that of the lower gap insulating portion 71 is formed on the left and right sides of the reproducing head element portion 73 and on the head rear portion side opposite to the medium facing surface. An upper gap insulating portion 76 is formed on the upper surface of the upper electrode lead layer 74 with the same material as the lower gap insulating portion 71. A common shield layer 77 made of a soft magnetic material similar to that of the lower shield layer 70 is formed so as to face the CPP reproducing head element portion 73 via the upper gap insulating portion 76, and a magnetoresistive thin film magnetic for CPP reproducing is formed. A head portion 78 is formed.

Further, AL ₂ is formed on the common shield layer 77.
The recording gap layer 79 is formed using a nonmagnetic insulating material such as O ₃ . Further, an upper magnetic pole 80 made of a soft magnetic material is formed so as to face the common shield layer 77 via the recording gap layer 79 and contact the common shield layer 77 at the rear portion. A winding coil 81 is provided so as to surround the upper magnetic pole 80 in a portion in contact with the common shield layer 77, and a recording induction type thin film magnetic head portion 82 is formed. As described above, the common shield layer 77 is
It has a function having both the shield function of the reproducing magnetoresistive thin film magnetic head portion 78 and the lower magnetic pole function of the recording inductive thin film magnetic head portion 82.

The current direction (CIP mode) parallel to the film surface and the current flow direction in the CPP mode in the magnetic head having the above structure will be briefly described with reference to FIGS. 10 and 13. As described above, FIG. 10 is a schematic front view of the CIP magnetic head viewed from the medium facing surface side.
FIG. 13 shows C in the head shown in FIGS. 11 and 12.
FIG. 13 is a partial cross-sectional side view (cross-sectional view taken along the line DD in FIG. 12) of the magnetoresistive thin film magnetic head portion 78 for PP reproduction.

In the CIP structure, a pair of left and right electrode lead layers 6 are formed as shown by a current path 69 shown by a dotted line in FIG.
The current supplied from one side of the read head element unit 59
And flows to the other electrode lead layer 61. At this time, the supplied current flows in the film surface of the reproducing head element portion 59. On the other hand, in the CPP structure shown in FIG. 13, like the current path 83, the current supplied from the lower electrode lead layer 72 flows through the read head element portion 73 to the upper electrode lead layer 74. At this time, the supplied current flows in the direction perpendicular to the film surface of the reproducing head element portion 73.

[0012]

In recent years, strong efforts have been made to reduce the size of thin-film magnetic heads, and in response to higher recording densities, the recording track width for narrow track recording and the reproduction of narrow track recording have been improved. The reproduction track width for reproducing the recording signal and the reproduction gap length for reproducing the recording signal having a short wavelength are becoming smaller and smaller, and this tendency is certain to increase in the future.

In response to the higher recording density demanded more severely in the future, in the reproducing head portion of the thin film magnetic head, in order to reproduce a signal recorded in a narrow track and a short wavelength on the magnetic recording medium, It is necessary to reduce the reproduction track width and the reproduction gap length. The reproduction gap length is the distance from the upper surface of the lower shield layer to the lower surface of the upper shield layer, that is, the sum of the film thicknesses of the lower gap insulating layer, the GMR element and the upper gap insulating layer. In order to reduce the reproduction gap length, the film thickness accuracy of the GMR element is important, and in particular, a GMR element which is highly sensitive and can be made into an extremely thin film is required.

It is an object of the present invention to solve the above problems and provide a high-performance magnetoresistive effect head compatible with a narrow gap and a method for manufacturing the same. Moreover, it aims at providing the GMR element suitable for using for such a magnetoresistive effect head.

[0015]

In order to solve the above problems, the GMR element according to the present invention comprises a first antiferromagnetic layer, a first ferromagnetic layer, a first nonmagnetic layer, a free magnetic layer, A double spin valve structure in which a second non-magnetic layer, a second ferromagnetic layer, and a second antiferromagnetic layer are sequentially stacked is used as a unit, and
A CP including a magnetoresistive effect film having a multi-layer double spin valve structure in which a plurality of heavy spin valve structures are stacked, and using a current in a direction perpendicular to a film surface of the magnetoresistive effect film.
It is configured to operate in P mode. According to this structure, the multilayer 2 in which a plurality of double spin valve structures are laminated
By having a heavy spin valve structure and being configured to operate in the CPP mode, deterioration of the MR effect is prevented, the film resistance is increased, and the head output is improved.

As the underlayer of the first antiferromagnetic layer,
An alloy made of NiFe or NiFeCr can be used. The first and second antiferromagnetic layers are M
It is made of an n-based alloy, and the Mn-based alloy contains Pt, Ir, R
At least one selected from u and Rh can be included. The first and second ferromagnetic layers are made of Fe, C
At least one selected from o and Ni can be included. Also, the first and second ferromagnetic layers may include a laminated ferri structure. The first and second nonmagnetic layers may be made of Cu having a film thickness of 10 to 30Å. The free magnetic layer is made of an alloy containing at least one selected from Fe, Co, and Ni, and can have a structure of 1 to 5 layers.

The double spin valve structure has an N layer (N is 2
In the multilayer double spin-valve structure in which the above-mentioned integers are stacked, the M-th layer (M is 1 ≦ M ≦ N−
A second antiferromagnetic layer having a double spin-valve structure having an integer of 1) and a first antiferromagnetic layer having a double spin-valve structure having an M + 1th layer may be used as a common layer.

The magnetoresistive head of the first structure according to the present invention comprises a GMR element exhibiting a magnetoresistive effect, and a magnetic flux guide for drawing the leakage magnetic flux from the magnetic recording medium into the GMR element. The GMR element is arranged receding from the medium facing surface, and the magnetic flux guide is arranged between the medium facing surface and the GMR element.
The film thickness of the magnetic flux guide depends on the magnetic flux guide and the GMR.
It has a thick structure in a portion where elements are joined and a thin structure in a portion exposed to the medium facing surface. According to this configuration, by providing a magnetic flux guide on the medium facing surface and effectively inducing external magnetization to the GMR element, the GMR element can be arranged so as to recede from the medium facing surface. As a result, the gap can be narrowed without being controlled by the thickness of the GMR element. Further, it is possible to prevent a decrease in reliability due to corrosion during the processing process.

In this magnetoresistive effect head, preferably, the GMR element is configured to operate in a CPP mode using a current in a direction perpendicular to the film surface of the magnetoresistive effect film. Further, it is preferable that the GMR element in this magnetoresistive head has the structure of the GMR element of the present invention, and at least a plurality of free magnetic layers of the GMR element are joined to the magnetic flux guide. Further preferably, the magnetic flux guide has a shield type structure in which a portion exposed to the medium facing surface is arranged in a gap between the shields. Further preferably, the magnetic flux guide is an insulating magnetic body. Also preferably, the magnetic flux guide is ferrite. Also preferably, the G
The MR element and the magnetic flux guide are electrically insulated.

The magnetoresistive head of the second structure according to the present invention comprises a GMR element exhibiting a magnetoresistive effect, and a magnetic flux guide for drawing the leakage magnetic flux from the magnetic recording medium into the GMR element. The GMR element has a plurality of free magnetic layers, the lowest free magnetic layer faces the medium facing surface, and the other free magnetic layers are arranged receding from the medium facing surface. A magnetic flux guide is arranged to magnetically connect the plurality of free magnetic layers. According to this structure, the lowermost free magnetic layer acts as a magnetic flux guide, and effectively induces external magnetization in the GMR element. Thereby, the GMR element can be arranged so as to be retracted from the medium facing surface. Therefore, it is possible to narrow the gap without being controlled by the thickness of the GMR element. Further, it is possible to prevent a decrease in reliability due to corrosion during the processing process.

In this magnetoresistive effect head, preferably, the GMR element is configured to operate in a CPP mode using a current in a direction perpendicular to the film surface of the magnetoresistive effect film. The GMR element in this magnetoresistive head preferably has the structure of the GMR element of the present invention. Further preferably, it has a shield type structure in which the free magnetic layer portion is arranged in a gap between shields. Further preferably, the GMR element and the magnetic flux guide are electrically insulated. Further preferably, the magnetic flux guide is an insulating magnetic body. Also preferably, the magnetic flux guide is ferrite.

A magnetoresistive head having a third structure according to the present invention comprises a GMR element exhibiting a magnetoresistive effect, and a magnetic flux guide for drawing a leakage magnetic flux from a magnetic recording medium into the GMR element. The soft magnetic layer is arranged at the end portion on the rear side from the facing surface. According to this structure, by arranging the soft magnetic layer behind the GMR element portion formed of a large number of free magnetic layers, it is possible to apparently cancel the magnetic charge generated at the end portion of the free magnetic layer. , The demagnetizing field can be reduced. Therefore, the MR height can be further shortened, which is suitable for high density.

In this magnetoresistive head, preferably, the GMR element is configured to operate in a CPP mode using a current in a direction perpendicular to the film surface of the magnetoresistive film. The GMR element in this magnetoresistive head preferably has the structure of the GMR element of the present invention. Also, in this magnetoresistive head, preferably, the GMR element is arranged so as to recede from the medium facing surface, and the magnetic flux guide is arranged so as to be interposed between the medium facing surface and the GMR element. The film thickness is thick in a portion where the magnetic flux guide and the GMR element are joined, and thin in a portion exposed to the medium facing surface. Alternatively, the G
The MR element has a plurality of free magnetic layers, the lowermost free magnetic layer faces the medium facing surface, and the other free magnetic layers are arranged receding from the medium facing surface. A magnetic flux guide that magnetically connects the magnetic layers is preferably arranged.

The method of manufacturing a magnetoresistive effect head according to the present invention manufactures a magnetoresistive effect head having a GMR element exhibiting a magnetoresistive effect and a magnetic flux guide for drawing the leakage magnetic flux from the magnetic recording medium into the GMR element. The method includes the following steps. That is, a step of forming the GMR element, a step of forming a resist layer on the GMR element, a step of etching a part of the GMR element using the resist layer as a mask, and a step of peeling the resist layer. A step of forming the magnetic flux guide, a step of forming a resist layer on the magnetic flux guide, a step of etching a part of the magnetic flux guide using the resist layer as a mask, and a step of peeling the resist layer. .
According to this manufacturing method, by forming an arbitrary pattern in the GMR element section and the magnetic flux guide, it is possible to effectively induce external magnetization in the GMR element section and manufacture a head suitable for high output and narrow gap. .

In this manufacturing method, it is preferable that the G
The free magnetic layer of the MR element and the magnetic flux guide are magnetically coupled and electrically insulated.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) FIG. 1 is a schematic view showing a cross section of a head element portion for thin film magnetic reproduction using a magnetoresistive film in Embodiment 1 which is orthogonal to a medium facing surface. is there. 2A is a front view taken along the line AA of FIG. 1, and FIG. 2B is a sectional view taken along the line BB.

The lower shield layer 1 is made of a soft magnetic material such as permalloy, Co-based amorphous magnetic film or Fe-based fine particle magnetic film. Al ₂ is formed on the lower shield layer 1.
The lower gap insulating layer 2 is formed by using a nonmagnetic insulating material such as O ₃ , AlN or SiO ₂ , and the lower electrode lead layer 3 is formed thereon. On the lower electrode lead layer 3, a GMR element 4 (generally referred to as MR element or GMR element which is a magnetoresistive effect element) is formed. GM
Although not shown in detail, the R element 4 includes a NiFe alloy film,
A free magnetic layer made of Co, CoFe alloy film, or the like;
A non-magnetic conductive layer made of Cu or the like, a fixed magnetic layer made of the same ferromagnetic material as the free magnetic layer, IrMn, αF
The antiferromagnetic layer is made of materials such as e ₂ O ₄ , FeMn-based alloy film, and PtMn-based alloy film.

The front end surface of the GMR element 4 is formed so as to recede a predetermined length from the medium facing surface. Also, GMR
Although not shown, the front and rear end portions of the element 4 are formed to have inclined surfaces by an etching method such as ion milling. An insulating gap layer 6 is formed on the lower electrode lead layer 3 in contact with the rear side and both end faces of the GMR element 4. The insulating gap layer 6 is formed by using the same nonmagnetic insulating material as that of the lower gap insulating layer 2 so that the insulating gap layer 6 has a thickness approximately equal to the height of the GMR element from the upper surface of the lower electrode lead layer 3. There is.

A magnetic flux guide layer 5 is formed in contact with the front end surface of the GMR element 4. The magnetic flux guide layer 5 is made of ferrite, which is an insulating magnetic material, and in a portion adjacent to the GMR element 4, the magnetic field guide layer 5 extends from the upper surface of the lower electrode lead layer 3 to the GMR element.
It has a film thickness approximately equal to the thickness up to the height of the element 4. The tip portion of the magnetic flux guide layer 5, to be precise, from the position 0.1 to 1000 nm away from the front end surface of the GMR element 4 to the medium facing surface is exposed to an etching method such as ion milling.
It is formed to have a film thickness of 1 to 1000 nm and is thinner than the thickness of the GMR element 4.

An upper electrode lead layer 7 is formed on the GMR element 4, the magnetic flux guide layer 5 and the insulating gap layer 6 by using the same conductive material as that of the lower electrode lead layer 3.
Therefore, the GMR element portion 4 is sandwiched between the upper and lower electrode lead layers 3 and 7. An upper gap insulating portion 8 is formed on the upper surfaces of the tip portions of the upper electrode lead layer 7 and the magnetic flux guide layer 5 by using the same nonmagnetic insulating material as that of the lower gap insulating portion 2. A common shield layer 9 made of a soft magnetic material similar to that of the lower shield layer 1 is formed on the upper gap insulating portion 8 and faces the GMR element portion 4 via the upper gap insulating portion 8. The reproduction gap length 10 is composed of the thicknesses of the lower gap insulating layer 2, the lower electrode lead layer 3, the magnetic flux guide layer 5, and the upper gap insulating layer 8.

As described above, by providing the magnetic flux guide 5 on the medium facing surface and effectively inducing the external magnetization to the GMR element 4, the GMR element 4 can be set back from the medium facing surface. As a result, the gap can be narrowed without being controlled by the thickness of the GMR element 4. Further, it is possible to prevent a decrease in reliability due to corrosion during the processing process.

(Embodiment 2) FIG. 3 is a schematic diagram showing a cross section of a head element portion for thin film magnetic reproduction using a magnetoresistive film in Embodiment 2 which is orthogonal to the medium facing surface.

The lower shield layer 11 is made of Permalloy, Co
A soft magnetic material such as a system-based amorphous magnetic film or a Fe-based fine particle magnetic film is used as a material. Al on the lower shield layer 11
_A lower gap insulating layer 12 is formed by using a nonmagnetic insulating material such as ₂ O ₃ , AlN or SiO ₂ , and a lower electrode lead layer 13 is formed thereon. Lower electrode lead layer 1
A GMR element 14 is formed on the surface 3. Although not shown in FIG. 3, the GMR element 14 includes a NiFe alloy film,
A free magnetic layer made of Co, CoFe alloy film, or the like;
A non-magnetic conductive layer made of Cu or the like, a fixed magnetic layer made of the same ferromagnetic material as the free magnetic layer, IrMn, αF
The antiferromagnetic layer is made of a material such as e ₂ O ₄ , FeMn-based alloy film, or PtMn-based alloy film.

Although not shown, the front and rear end portions of the GMR element 14 are formed to have inclined surfaces by an etching method such as ion milling. The insulating gap layer 6 is formed on the lower electrode lead layer 13 so as to contact the rear side and both end faces of the GMR element 14. The insulating gap layer 6 is made of the same nonmagnetic insulating material as that of the lower gap insulating layer 12 so as to have a film thickness approximately equal to the thickness from the upper surface of the lower electrode lead layer 13 to the height of the GMR element. It is a film.

The front end of the GMR element 14 is GM
It is etched so as to leave a part of the thickness of the R element 14. FIG. 4A shows an enlarged view of the tip portion of the GMR element 14. FIG. 4B is a front view on the plane CC of FIG. 3.

The GMR element 14 comprises the underlayer 2 made of Ta.
1, a crystal orientation control layer 22 made of NiFeCr, and C
a free magnetic layer 23 made of oFe, a nonmagnetic layer 24 made of Cu, a ferromagnetic fixed layer 25 made of CoFe, and Ir.
The bottom spin valve film includes an antiferromagnetic layer 26 made of Mn and a cap layer 27 made of Ta. The front end of the GMR element 14 after etching is
The underlayer 21, the crystal orientation control layer 22, and the free magnetic layer 23 are etched so as to remain. In this way, etching can be performed so as to leave the free magnetic layer 23 at the bottom,
This is a main point that constitutes the front end of the GMR element 14. This range covers a position of 0.05 to 5 μm from the medium facing surface. The present embodiment is an example of the bottom type spin valve film, but the same applies to the case of the top and other spin valve films.

On the upper surface of the front end portion of the GMR element 14 (the upper surface of the free magnetic layer 23), the GMR from the upper surface of the free magnetic layer 23 is measured.
The magnetic flux guide layer 15 made of ferrite, which is an insulating magnetic material, is formed so as to have a thickness approximately equal to the thickness of the uppermost surface of the element 14 (upper surface of the cap layer 27). This magnetic flux guide layer 15 is removed by etching from the position in the range of 0.1 to 1000 nm from the front end face of the GMR element 14 to the medium facing surface.

An upper electrode lead layer 17 is formed on the GMR element 14 and the magnetic flux guide layer 15 by using the same conductive material as that of the lower electrode lead layer 13, and the upper and lower electrode lead layers 13 and 17 form the GMR element portion. It has a structure in which 14 are sandwiched. Upper electrode lead layer 17 and GM
On the upper surface of the front end portion of the R element 14, the lower gap insulating portion 1
The upper gap insulating portion 18 is formed using the same non-magnetic insulating material as that of No. 2. A common shield layer 19 made of the same soft magnetic material as the lower shield layer 11 is formed on the upper gap insulating portion 18, and the upper gap insulating portion 18 is formed.
The reproducing head element portion is formed by facing the GMR element portion 14 via the. Playback gap length 20
Is a lower gap insulating layer 12, a lower electrode lead layer 13,
It is composed of the underlayer 21, the crystal orientation control layer 22, the free magnetic layer 23, and the upper gap insulating layer 18.

As described above, a part of the thickness is removed so that the lowermost free magnetic layer 23 is left at the front end of the GMR element 14, and the remaining free magnetic layer 23 acts as a magnetic flux guide. External magnetization can be effectively induced in the GMR element 14. Therefore, the GMR element 4 can be set back from the surface facing the medium with respect to the magnetic flux guide 15. As a result, the gap can be narrowed without being controlled by the thickness of the GMR element 4. Further, it is possible to prevent a decrease in reliability due to corrosion during the processing process.

(Third Embodiment) FIG. 5 is a schematic view showing a cross section of a head element portion for thin film magnetic reproduction using a magnetoresistive film in the third embodiment, which is orthogonal to the medium facing surface. The lower shield layer 28 is made of a soft magnetic material such as permalloy, a Co-based amorphous magnetic film or a Fe-based fine particle magnetic film. Al ₂ O ₃ , on the lower shield layer 28,
A lower gap insulating layer 29 is formed by using a nonmagnetic insulating material such as AlN or SiO ₂ , and a lower electrode lead layer 30 is formed thereon. A GMR element 31 is formed on the lower electrode lead layer 30. GMR element 31
(Not shown) is a NiFe alloy film, Co, CoFe
A free magnetic layer made of an alloy film or the like, a non-magnetic conductive layer made of Cu or the like, a fixed magnetic layer made of the same ferromagnetic material as the free magnetic layer, IrMn, αFe ₂ O ₃ , FeM
The antiferromagnetic layer is made of a material such as an n-based alloy film or a PtMn-based alloy film.

Although not shown, the front and rear end surfaces of the GMR element 31 are formed to have inclined surfaces by an etching method such as ion milling. GMR element 31
An insulating soft magnetic layer 37 is formed on the lower electrode lead layer 30 so as to be in contact with the rear end face thereof. Insulating soft magnetic layer 37
Is formed so as to have a film thickness approximately equal to the height of the GMR element 31 from the upper surface of the lower electrode lead layer 30.

An insulating gap layer 33 is formed on the lower electrode lead layer 30 so as to contact the rear side of the insulating soft magnetic layer 37 and both end faces of the GMR element 31. Insulation gap layer 3
3 is formed using a nonmagnetic insulating material similar to that of the lower gap insulating layer 29 so as to have a film thickness approximately equal to the thickness from the upper surface of the lower electrode lead layer 30 to the height of the GMR element. .

A magnetic flux guide layer 32 is formed in contact with the front end face of the GMR element 31. The magnetic flux guide layer 32 is
Ferrite, which is an insulating magnetic material, is used as a material, and a portion adjacent to the GMR element 31 has a thickness substantially equal to the thickness from the upper surface of the lower electrode lead layer 30 to the height of the GMR element 31. The tip of the magnetic flux guide layer 32, that is, GM
The R element 31 is formed to have a smaller film thickness than the GMR element 31 from a position separated from the front end surface by a predetermined length to the medium facing surface.

The film thickness portion of the magnetic flux guide layer 32, the GMR element 3
An upper electrode lead layer 34 is formed on the insulating soft magnetic layer 37 and the insulating gap layer 33 using the same conductive material as that of the lower electrode lead layer 30. Therefore,
With the upper and lower electrode lead layers 34 and 30, the GMR element part 31 is formed.
It has a sandwich structure. A non-magnetic insulating material similar to that of the lower gap insulating portion 29 is used for the upper surfaces of the tip portions of the upper electrode lead layer 34 and the magnetic flux guide layer 32.
The upper gap insulating portion 35 is formed. A common shield layer 36 made of the same soft magnetic material as the lower shield layer 28 is formed on the upper gap insulating portion 35, and faces the GMR element portion 31 via the upper gap insulating portion 35.

As described above, the insulating soft magnetic layer 37 is provided behind the GMR element portion 31 formed of a large number of free magnetic layers.
By disposing, the magnetic charge generated at the end of the free magnetic layer can be apparently canceled and the demagnetizing field can be reduced. Therefore, the MR height can be further shortened, which is suitable for high density.

(Embodiment 4) FIG. 6 shows a schematic structure of a thin-film magnetic reproducing head element portion using a magnetoresistive film in Embodiment 4. This thin-film magnetic reproducing head element portion has the same structure as that of FIG. 1, except for the structure of the GMR element portion 4. Therefore, FIG. 6 is a cross-sectional view corresponding to BB of FIG. 1, and is therefore similar to FIG. 2B except for the configuration of the GMR element portion 4.

In the GMR element portion 4 of FIG. 6, a base film 38 made of Ta, a crystal orientation control layer 39 made of NiFeCr, an antiferromagnetic layer 40 made of IrMn, a magnetic pinned layer 41 made of CoFe, and a non-made layer made of Cu. Magnetic layer 42, C
Free magnetic layer 43 made of oFe, non-magnetic layer 44 made of Cu, ferromagnetic fixed layer 45 made of CoFe, and Ir
The antiferromagnetic layer 46 made of Mn forms the first set of double spin valve structures.

Further, a magnetic pinned layer 47 made of CoFe, a nonmagnetic layer 48 made of Cu, and CoF formed thereon.
e free magnetic layer 49, Cu non-magnetic layer 5
0, a ferromagnetic fixed layer 51 made of CoFe, an antiferromagnetic layer 52 made of IrMn, and a cap layer 5 made of Ta.
3 forms a second set of double spin valve structures.

The antiferromagnetic layer 46 acts as a common layer for the first and second sets of double spin valve structures. In the present embodiment, two sets of double spin valve structures are shown, but the same structure can be applied to the case of having three sets or more sets of double spin valve structures.

As described above, in the CPP mode, G
By using a structure in which a large number of double spin valve structures are laminated in the MR element portion, deterioration of the MR effect can be prevented, and the film resistance can be increased to improve the head output.

(Fifth Embodiment) With reference to FIGS. 7 and 8, a method of manufacturing a magnetoresistive effect film according to a fifth embodiment will be described. The present embodiment is an example of a process of manufacturing the head element portion for thin film magnetic reproduction having the structure shown in FIG.

First, as shown in FIG. 7A, a lower gap insulating layer 2, a lower electrode lead layer 3 and a GMR element portion 4 are formed on the lower shield layer 1, and a resist layer 54 is further formed thereon. To form. Next, as shown in FIG. 7B, ion milling is performed using the resist layer 54 as a resist mask to remove the tip of the GMR element section 4. Next, after the previous step, the magnetic flux guide layer 5 is formed as shown in FIG. 7C without exposing the end portion of the GMR element portion 4 to the atmosphere. The reason why it is not exposed to the atmosphere is to prevent the end portion of the GMR element portion 4 from being oxidized. If an oxide layer is formed on the end surface of the GMR element part 4 and the end surface of the magnetic flux guide layer 5, there are adverse effects such as deterioration of the MR effect and variations in MR characteristics.

Next, the resist layer 54 is removed, and the structure shown in FIG.
The state shown in (d) is obtained. Next, a resist layer 55 is formed as shown in FIG. 7E, and ion milling is performed using the resist layer 55 as a resist mask to remove the tip of the magnetic flux guide layer 5 as shown in FIG. 7F. . Then, the resist layer 55 is removed to obtain the state shown in FIG. Next, as shown in FIG. 8H, the upper electrode lead layer 7
To form. Further, a resist layer 56 is formed thereon as shown in FIG. Next, in this state, FIG.
As shown in, ion milling is performed using the resist layer 56 as a mask to remove the upper electrode lead layer 7 on the tip of the magnetic flux guide layer 5. Next, the resist layer 56 is removed to obtain the state shown in FIG. Next, as shown in FIG.
The upper gap insulating portion 8 is formed.

As described above, in the GMR head having the magnetic flux guide, by forming an arbitrary pattern in the GMR element portion and the magnetic flux guide, the external magnetization is effectively induced in the GMR element portion, and a high output and a narrow gap are obtained. It becomes possible to manufacture a suitable head.

The structure shown in the above embodiment is a part of an example to which the present invention is applied. INDUSTRIAL APPLICABILITY The present invention can be applied to all magnetoresistive heads having a GMR element exhibiting a magnetoresistive effect and a magnetic flux guide for drawing a leakage magnetic flux from a magnetic recording medium into the GMR element.

[0056]

According to the present invention, by providing a magnetic flux guide on the medium facing surface and effectively inducing external magnetization to the GMR element, the GMR element can be arranged so as to recede from the medium facing surface. As a result, the gap can be narrowed without being controlled by the thickness of the GMR element.

Further, the decrease in output which is a concern at that time is 2
This can be prevented by using a GMR element having a plurality of heavy spin valve structures and operating in the CPP mode.

[Brief description of drawings]

FIG. 1 is a schematic view showing a cross section of a thin-film magnetic reproducing head element portion using a magnetoresistive effect film according to a first embodiment, which is orthogonal to a medium facing surface.

2A is a front view of the head element portion for thin film magnetic reproduction of FIG. 1 taken along the line AA, and FIG. 2B is a sectional view taken along the line BB.

FIG. 3 is a schematic diagram showing a cross section of a thin-film magnetic reproducing head element portion using a magnetoresistive effect film according to a second embodiment, which is orthogonal to a medium facing surface.

4A is an enlarged cross-sectional view of a main part of the head element portion for thin film magnetic reproduction of FIG. 3, and FIG. 4B is a cross-sectional view taken along line CC of FIG.

FIG. 5 is a schematic view showing a cross section of a head element portion for thin film magnetic reproduction using a magnetoresistive effect film according to a third embodiment, which is orthogonal to a medium facing surface.

6 is a main portion of a thin film magnetic reproducing head element portion using a magnetoresistive effect film according to a fourth embodiment, taken along the line BB in FIG.
Figure showing a cross section corresponding to

7A and 7B are cross-sectional views showing steps of a method of manufacturing a magnetoresistive effect film according to a fifth embodiment.

8 is a cross-sectional view showing a step that follows FIG.

FIG. 9 is a perspective view showing a conventional shield type thin film magnetic head having a CIP structure.

FIG. 10 is a front view of the shield type thin film magnetic head of FIG. 9 seen from the medium facing surface.

FIG. 11 is a perspective view showing a conventional shield type thin film magnetic head having a CPP structure.

FIG. 12 is a front view of the shielded thin film magnetic head of FIG. 11 seen from the medium facing surface.

FIG. 13 is a diagram showing a DD cross section of FIG. 12;

[Explanation of symbols]

1, 11, 28, 57, 70 Lower shield layer 2, 12, 29, 58, 71 Lower gap insulating layer 3, 13, 30, 72 Lower electrode lead layer 4, 14, 31, 59, 73 GMR element section 5, 15, 32 Magnetic flux guide layer 6, 16, 33, 75 Gap insulation layer 7, 17, 34, 74 Upper electrode lead layer 8, 18, 35, 63, 76 Upper gap insulation 9, 19, 36, 62, 77 Common shield layer 10, 20 Play gap length 21, 38 Underlayer 22, 39 Crystal orientation control layer 23, 43, 49 Free magnetic layer 24, 42, 44, 48, 50 Non-magnetic layer 25, 41, 45, 47, 51 Ferromagnetic pinned layer 26, 40, 46, 52 Antiferromagnetic layer 27,53 Cap layer 37 Insulating soft magnetic layer 54, 55, 56 resist layer 60 longitudinal bias layer 61 Electrode lead layer 64, 78 Magnetoresistive thin film magnetic head unit for reproduction 65, 79 recording gap layer 66, 80 upper magnetic pole 67, 81 winding coil 68, 82 Inductive thin film magnetic head for recording 69, 83 Current path

Continued front page    F term (reference) 2G017 AC01 AC07 AD55 AD63 AD65                 5D034 AA03 BA03 BB01 DA07                 5E049 AA01 AA04 AA07 AC00 BA12                       CB02 DB12

Claims (32)

[Claims] 1. A first antiferromagnetic layer, a first ferromagnetic layer, a first nonmagnetic layer, a free magnetic layer, a second nonmagnetic layer, a second ferromagnetic layer, and a second antiferromagnetic layer. A magnetoresistive effect film having a multi-layered double spin valve structure in which a plurality of the double spin valve structures are stacked in units of a double spin valve structure in which ferromagnetic layers are sequentially stacked is provided. A GMR element characterized by being configured to operate in a CPP mode using a current in a direction perpendicular to a film surface. 2. N as an underlayer of the first antiferromagnetic layer
The GMR element according to claim 1, wherein an alloy made of iFe or NiFeCr is used. 3. The first and second antiferromagnetic layers are Mn
The Mn-based alloy includes Pt, Ir, R
The GMR element according to claim 1 or 2, which contains at least one selected from u and Rh. 4. The first and second ferromagnetic layers are F
The GMR element according to any one of claims 1 to 3, which contains at least one kind selected from e, Co, and Ni. 5. The GMR element according to claim 1, wherein the first and second ferromagnetic layers include a laminated ferri structure. 6. The first and second nonmagnetic layers are made of Cu having a film thickness of 10 to 30 Å.
6. The GMR element according to any one of items 1 to 5. 7. The free magnetic layer is made of an alloy containing at least one selected from Fe, Co and Ni.
The GMR element according to any one of claims 1 to 6, which has a five-layer structure. 8. In a multilayer double spin valve structure in which N layers (N is an integer of 2 or more) of the double spin valve structure are stacked, an M-th layer (M is 1 ≦ M ≦ N when sequentially stacked.
(Integer satisfying −1) second spin-valve structure second antiferromagnetic layer and M + 1-th layer double spin-valve structure first antiferromagnetic layer are used as a common layer. The GMR according to any one of claims 1 to 7.
element. 9. A magnetoresistive head using the GMR element according to claim 1. Description: 10. A GMR element exhibiting a magnetoresistive effect and a magnetic flux guide for drawing a leakage magnetic flux from a magnetic recording medium into the GMR element, wherein the GMR element is arranged so as to recede from a medium facing surface. Is disposed so as to be interposed between the medium facing surface and the GMR element, and the film thickness of the magnetic flux guide is equal to that of the magnetic flux guide and the GMR element.
A magnetoresistive head having a thick structure in a portion where the MR element is joined and a thin structure in a portion exposed to the medium facing surface. 11. The GMR element according to claim 10, wherein the GMR element is configured to operate in a CPP mode using a current in a direction perpendicular to the film surface of the magnetoresistive film. The magnetoresistive head described. 12. The GMR element has the structure of the GMR element according to claim 1, wherein at least a plurality of free magnetic layers of the GMR element are joined to the magnetic flux guide. Item 12. A magnetoresistive head according to item 10 or 11. 13. The shield type structure according to claim 10, wherein a portion of the magnetic flux guide exposed on the medium facing surface has a shield type structure arranged in a gap between the shields. The magnetoresistive head according to 1. 14. The magnetoresistive head according to claim 10, wherein the magnetic flux guide is an insulating magnetic body. 15. The magnetoresistive head according to claim 10, wherein the magnetic flux guide is ferrite. 16. The magnetoresistive effect head according to claim 10, wherein the GMR element and the magnetic flux guide are electrically insulated. 17. A GMR element having a magnetoresistive effect, and a magnetic flux guide for drawing a leakage magnetic flux from a magnetic recording medium into the GMR element, wherein the GMR element has a plurality of free magnetic layers, and the GMR element at the lowermost portion. The free magnetic layer faces the medium facing surface, the other free magnetic layers are arranged receding from the medium facing surface, and a magnetic flux guide that magnetically connects the plurality of free magnetic layers is arranged. A magnetoresistive effect head characterized by. 18. The GMR element according to claim 17, wherein the GMR element is configured to operate in a CPP mode using a current in a direction perpendicular to the film surface of the magnetoresistive film. The magnetoresistive head described. 19. The GMR element has the structure of the GMR element according to claim 1.
Alternatively, the magnetoresistive head according to item 18. 20. The shield type structure according to claim 17, wherein the free magnetic layer portion at the bottom has a shield type structure arranged in a gap between the shields.
A magnetoresistive effect head according to item. 21. The magnetoresistive head according to claim 17, wherein the GMR element and the magnetic flux guide are electrically insulated from each other. 22. The magnetoresistive head according to claim 17, wherein the magnetic flux guide is an insulating magnetic body. 23. The magnetoresistive head according to claim 17, wherein the magnetic flux guide is ferrite. 24. A soft magnetic layer comprising a GMR element exhibiting a magnetoresistive effect and a magnetic flux guide for drawing a leakage magnetic flux from a magnetic recording medium into the GMR element, the soft magnetic layer being provided at an end portion on the rear side from the medium facing surface of the GMR element. A magnetoresistive effect head, in which the 25. The GMR element is configured to operate in a CPP mode using an electric current in a direction perpendicular to a film surface of a magnetoresistive effect film. The magnetoresistive head described. 26. The GMR element having the structure of the GMR element according to claim 1.
Or the magnetoresistive head according to item 25. 27. The GMR element is arranged so as to recede from a medium facing surface, the magnetic flux guide is arranged so as to be interposed between the medium facing surface and the GMR element, and a film thickness of the magnetic flux guide is 27. The magnetoresistive head according to claim 24, wherein a thick structure is formed in a portion where the magnetic flux guide and the GMR element are joined, and a thin structure is formed in a portion exposed to the medium facing surface. 28. The GMR element has a plurality of free magnetic layers, the lowermost free magnetic layer faces the medium facing surface, and the other free magnetic layers are arranged receding from the medium facing surface. 27. The magnetoresistive head according to claim 24, further comprising a magnetic flux guide arranged to magnetically connect the plurality of free magnetic layers. 29. The magnetoresistive effect head according to claim 24, wherein the soft magnetic layer is made of insulating soft magnetic material. 30. A method of manufacturing a magnetoresistive head comprising a GMR element exhibiting a magnetoresistive effect and a magnetic flux guide for drawing a leakage magnetic flux from a magnetic recording medium into the GMR element, the step of forming the GMR element. And the GM
A step of forming a resist layer on the R element, a step of etching a part of the GMR element using the resist layer as a mask, a step of peeling the resist layer, a step of forming the magnetic flux guide, and a magnetic flux Manufacture of a magnetoresistive head comprising: a step of forming a resist layer on a guide; a step of etching a part of the magnetic flux guide using the resist layer as a mask; and a step of peeling the resist layer. Method. 31. The method of manufacturing a magnetoresistive head according to claim 30, wherein the free magnetic layer of the GMR element and the magnetic flux guide are magnetically coupled and electrically insulated. 32. Any one of claims 9 to 29.
A magnetic disk device using the magnetoresistive head according to the item.