JP2003069088A - Semiconductor device and its driving method - Google Patents

Abstract

(57) Abstract: In a semiconductor device and a method of driving the same, the voltage at both ends of the positive side and the negative side is zero even when a current is flowing and a load is connected. And
An object is to provide a semiconductor device capable of reducing power supplied from a bias power supply to zero. SOLUTION: An n-side metal electrode 24-an N-stage n-side thermoelectric element 21-a transition layer (diode) 23-an N-stage p-side thermoelectric element 22-a p-side metal electrode 25 are laminated and a current is provided. While the n-side metal electrode 24 and the p-side metal electrode 2
5, the energy band gap of the transition layer (diode) 23, the resistance in the materials of the thermoelectric elements 21 and 22, the Seebeck coefficient in the material of the thermoelectric elements 21 and 22, so that the difference of the Fermi level of 5 becomes zero. , At least one of the number of stages of the thermoelectric elements 21 and 22 is adjusted.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which can be operated with a small amount of signal power by utilizing naturally occurring heat energy and a driving method thereof.

[0002]

2. Description of the Related Art At present, the problems of energy resource depletion and global warming are being addressed, but this is closely related to the increase in the amount of electricity consumed worldwide, so it is necessary to suppress the rapid increase in electricity consumption. Is.

As one means for achieving this, it is expected that a semiconductor device which operates with low power consumption, that is, an electronic or electric device with low power consumption is realized by using the semiconductor device.

Generally, in a semiconductor device, a voltage E _B is required to flow a current I _B , and at that time, power P = I _B
Since E _B is consumed, in order to keep the current I _B flowing,
The power P must be continuously supplied from the bias power supply. Incidentally, E _B is the bias source voltage.

FIG. 8 is a diagram for explaining the operation of the diode. FIG. 8A is an energy band diagram of a normal pn junction diode, and FIG. 8B is a thermo-light composed of a cascade thermoelectric semiconductor and a light emitting diode. energy band diagram of the conversion element is a diagram representing the (C) is a pn junction diode in the voltage E _B [V] and the thermal beam splitter and current I _B [a] characteristics.

In FIG. 8A, 1 is an n-type region of a pn junction diode, 2 is a p-type region of a pn junction diode,
3 is a transition region, 4 is an n-side metal electrode, 5 is a p-side metal electrode,
F _mn is the Fermi level at the n-side metal electrode, F _mp is the Fermi level at the p-side metal electrode, 2E _Gn is the energy band gap in the transition region, and V _bi is the built-in voltage. Shown respectively.

[0007] Power of the bias power supplied to the pn junction diode having an energy band structure observed in FIG. 8 (A) is a _{V 1 · I B, V 1} = (2E Gn + rI B)
Is. Note that r represents the resistance of the pn junction diode.

In FIG. 8B, 11 is an N-stage n-type thermoelectric semiconductor element, 12 is an N-stage p-type thermoelectric semiconductor element, and 13
Is a transition layer, 14 is an n-side metal electrode, 15 is a p-side metal electrode,
E _B represents the potential energy supplied from the bias power supply. Note that N is a positive integer, and in FIG.
The same symbols as those used in (A) represent the same parts or have the same meanings.

[0009] Bias source power supplied to the heat-light conversion element having an energy band structure found in FIG. 8 (B) is E _B I _B, an _{E B = (V Bnp + r} S I B).
It should be noted that r _s represents the resistance of the heat-light conversion element.

FIG. 8C shows a voltage E _B [V] / current I relating to the pn junction diode described with reference to FIG. 8A and the thermo-optical conversion element described with reference to FIG. 8B.
_B [A] characteristics are shown. Among the characteristic lines shown in FIG. 8C, the characteristic lines without (A) and (B) are the bias power supply when the potential energy V _Bnp supplied from the bias power supply is zero. Power, ie E
The relationship between _B and I _B is shown.

As is clear from FIG. 8C, for example, p
In the n-junction diode, in order to flow the current I _B ,
A voltage drop due to the resistance r component rI _B and energy band gap E _G (2E _G) is required voltage exceeding,
Since this voltage is supplied from the bias power supply, the bias power supply supplies the current I _B , so that the voltage is always supplied and the power is consumed.

In order to reduce the power supplied from the bias power source to the element to zero, the voltage across the element should be zero while the current I _B is flowing, and it is currently possible to achieve this. Although it is only a conductive element, when a load is connected to the superconducting element, the voltage cannot drop to zero because a voltage drop occurs in the load.

[0013]

According to the present invention, the voltage at both ends of the positive side and the negative side is zero even when the current is flowing and the load is connected. An object of the present invention is to provide a semiconductor device capable of reducing the electric power supplied from the bias power source to zero.

[0014]

According to the present invention, there is provided a structure in which an n-side metal electrode, a thermoelectric element, a diode, a thermoelectric element, and a p-side metal electrode are laminated, and an n-side metal electrode is formed in a state in which a current is applied. It is based on a semiconductor device capable of reducing the Fermi level difference of the p-side metal electrode to zero.

FIG. 1 is an energy band diagram in a semiconductor device for explaining the principle of the present invention.
The same symbols as those used in FIG. 8A represent the same parts or have the same meanings.

In the figure, 21 is an n-side n-side thermoelectric element,
22 is an N-stage p-side thermoelectric element, 23 is a transition layer (diode), 24 is an n-side metal electrode, 25 is a p-side metal electrode, 26
Is a bias power supply, F _mn is a Fermi level at the n-side metal electrode, F _mp is a Fermi level at the p-side metal electrode, and E _Gn is an energy half of the energy band gap in the transition layer. Band gap, r _0n is the resistance of the n-type thermoelectric element, I _B is the current supplied from the bias power supply,
α _0n is the Seebeck coefficient of the n-type thermoelectric element, ΔT _n is the n-type N
The temperature difference between the low temperature junction and the high temperature junction in the step thermoelectric element is shown respectively. Note that N is a positive integer.

The energy band diagram is
It is equivalently constructed based on the basic formula shown as the formula (1) below, and the formula (1) is derived from the energy conservation law (Note 1). Note 1 (Energy Conservation Law) The sum of supplied energy (+) and consumed energy (-) is zero.

[0018] _{0 = φ PH + E B -} [E G + N (r 0np I B + α 0np ΔT np)] ···· (1) φ PH = φ PHn + φ PHp r 0np = r 0n + r 0p α 0np ΔT np = Α _0n ΔT _n + α _0p ΔT _p E _G = E _Gn + E _Gp

In equation (1), simplification assuming that the parameters related to the n-side and the parameters related to the p-side are the same: -E _B = 2 {φ _PHn- [E _Gn + N (r _{0n I B + α 0n ΔT n} )]} becomes (2).

The main symbols found in the equations (1) and (2) will be described below. φ _PH : Electric potential energy of electrons and holes obtained in the N-stage thermoelectric semiconductor element. E _B : Electric potential energy supplied from the bias power supply, that is, voltage across both ends. _{[E G + N (r 0np} I B + α 0np ΔT np)]: electrons The energy necessary for exceeding the transition layer, the voltage used in the resistor, are used to maintain the voltage due to the temperature difference Energy consumption expressed as the sum of energy. N: Number of stages of n-type thermoelectric semiconductor element and p-type thermoelectric semiconductor element. E _G : Energy band gap of the transition layer. r _0n and r _0p : Resistances of n-type and p-type unit (one stage) thermoelectric semiconductor elements. α _0n and α _0p : Seebeck coefficient in n-type and p-type unit (one stage) thermoelectric semiconductor element. ΔT _n and ΔT _p : Temperature difference between the low temperature joint and the high temperature joint.

[0021] The electrical potential energy supplied from the bias power source, i.e., the voltage across E _B, the difference between the Fermi level F _mp Fermi level F _mn and p-side metal electrode 25 of the n-side metal electrode 24 , E _B = (F _mn −F
_mp ), therefore, if the current I _B flows and F _mn = F _mp , then E _B = 0, the voltage E _B supplied from the bias power source is zero, and the power is also P _B = IE _B = 0. Becomes zero at.

FIG. 2 is a diagram showing the electrical characteristics of the semiconductor device of the present invention described with reference to FIG. 1, in which the horizontal axis represents the bias power supply voltage E which is the difference in Fermi level.
_B [V] and the vertical axis represent I _B [A], which is the current supplied from the bias power supply.

From the figure, the bias power supply voltage E _B = 0
In can perceiving the flow of current I _B, the current I _B the heat energy of the surrounding which is converted into electrical energy, i.e., is maintained depending on the heat absorbed from the low temperature portion.

The equation of the current I _B described in the figure is derived from the equation (2), and the current flowing through the diode, that is, the transition layer 23 (see FIG. 1) is the energy of the electron. Cannot flow until the voltage exceeds the built-in voltage V _bi , that is, the energy band gap 2E _G.

The voltage at which the diode current starts to flow is 2 [
φ _PHn- (E _Gn + _{Nα 0n} ΔT _n )], the slanted broken line in the second quadrant represents the resistance component, and the sign of the product of the voltage and current is negative, and the power is produced. Is shown. That is, it is shown that the electric power consumed by the resistor (2Nr _0n ) is covered by thermal energy.

In the configuration of the semiconductor device according to the present invention described above, the product of the voltage across the n-side metal electrode and the p-side metal electrode and the flowing current, that is, the electric power is zero, and therefore the load current is Flows without supplying an electrode from a bias power source, and the source of electric power in this case is spontaneous thermal energy converted into electric energy.

By using the above-mentioned semiconductor device, a large current switching element, a low power loss element of a high Q low frequency coil, a device using a high voltage / large current element as a load, and a power source for a microwave high output element are realized. The power consumption is extremely low.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment FIG. 3 is an explanatory view of a main part of a slope showing a semiconductor device according to a first embodiment of the present invention, in which 31 is an n-side metal electrode and 32 is a metal electrode. Is an N-stage n-type thermoelectric element, 33 is an n-side electrode of a diode, 34 is an n-type layer, 35 is a p-type layer, 36 is a p-side electrode of a diode, 37 is a p-type thermoelectric element, and 38 is a p-side metal electrode Are shown respectively.

In the figure, the diode in the semiconductor device is
It is a light emitting diode using GaAs as a transition layer.
An N-stage n-type thermoelectric element 32 is coupled to the side electrode 33, and an N-stage p-type thermoelectric element 37 is coupled to the p-side electrode.

The n-type thermoelectric element 32 and the p-type thermoelectric element 37
Is an n-type (or p-type) BiTe having a thickness of 100 μm.
+ Ni plating (10 [μm]) + Solder (20 [μm])
m]) is laminated.

Energy band gap E of GaAs
_G is 1.5 [eV], and the Seebeck coefficients α _0n and α _0p of n-type and p-type BiTe are the same 0.2 [mV / °].
K].

In the semiconductor device having the above-mentioned configuration, the temperature difference ΔT _n = ΔT _p = 3 [° K], the temperature T _Hn of the high temperature junction of the n-side N-stage thermoelectric element = 300 [° K], and the number of stages N. = 15, the current I _B = 9.4 at the voltage E _B = 0.
[A] can be obtained. In this case, the cross sectional area of the thermoelectric element and the light emitting diode is 1 [mm] × 1 [mm].

In the semiconductor device according to the present invention, the gold on both ends is
Fermi level F for metal electrodes _mnAnd F_mpThe value of
Energy band gap of transfer layer (diode)
E_Gn, Resistance of thermoelectric element material r_0nAnd r_0p, Seebeck staff
Number α_0nAnd α_0p, Temperature difference ΔT_nAnd ΔT_pParameters such as
Of the parameters
Adjust at least one of the electrodes on both ends of the metal electrode.
Rumi Level F_mnAnd F_mpNeed to make the difference between zero
Is.

Embodiment 2 FIG. 4 is an energy band diagram for explaining that the energy band changes by adjusting various parameters in the semiconductor device of the present invention.
The same symbols as those used in FIG. 3 represent the same parts or have the same meanings.

In FIG. 4 (1), T _Hn is the temperature of the high temperature junction of the n-side N-stage thermoelectric element, T _Hp is the temperature of the high temperature junction of the p-side N-stage thermoelectric element, and T _Cn
Is the temperature of the cold junction of the n-side N-stage thermoelectric element, and T _Cp is the p-side N
In this case, the semiconductor device is in a thermal equilibrium state, the Fermi level in the transition layer 23 is F _to , and the Fermi level in the n-side metal electrode 24 is F to F. _{If the} Fermi level at the _mn and p-side metal electrodes 25 is F _mp , then F _to = F _mn = F _mp .

Referring to FIG. 4B, the parameters are adjusted so that the Fermi level F _t0 at the center of the energy band gap of the transition layer 23 becomes equal to the Fermi level F _mn of the n-side metal electrode 24 and the p-side metal. Electrode 2
5 is an energy band diagram when the Fermi levels F _mp of 5 are matched.

Similarly, referring to FIG. 4C, the Fermi level F _t0 , which is less than the median of the energy band gap of the transition layer 23, is differentiated between the n-side and p-side parameters by the n-side metal electrode. 24 is an energy band diagram when the Fermi level F _{mn of} 24 and the Fermi level F _mp of the p-side metal electrode 25 are matched.

Referring to FIG. 4 (4), similarly, the Fermi level F _t0 , which exceeds the median of the energy band gap of the transition layer 23, has a difference between n-side and p-side parameters, and the n-side metal electrode 24 has 6 is an energy band diagram when the Fermi level F _mn and the Fermi level F _mp of the p-side metal electrode 25 are matched.

As shown in FIG. 4 (5), similarly, the Fermi level F _t0 of the transition layer 23 is at the center of the energy band gap, and the Fermi level F _{t
6 is} an energy band diagram when the Fermi level F _mn of the n-side metal electrode 24 and the Fermi level F _mp of the p-side metal electrode 25 are matched at a level higher than _t0 .

Referring to FIG. 4 (6), similarly, the Fermi level F _t0 of the transition layer 23 is at the center of the energy band gap, and the Fermi level F _{t
6 is} an energy band diagram when the Fermi level F _mn of the n-side metal electrode 24 and the Fermi level F _mp of the p-side metal electrode 25 are matched at a level lower than _t0 .

As shown in FIG. 4 (7), the Fermi level F _mp of the p-side metal electrode 25 is n.
It is higher than the Fermi level F _{mn of the} side metal electrode 24 and is an energy band diagram when the Fermi level F _mn of the n-side metal electrode 24 is matched with the Fermi level F _t0 of the transition layer 23.

Similarly, referring to FIG. 4 (8), the Fermi level F _mp of the p-side metal electrode 25 is n.
It is lower than the Fermi level F _{mn of the} side metal electrode 24, and is an energy band diagram when the Fermi level F _mn of the n-side metal electrode 24 is matched with the Fermi level F _t0 of the transition layer 23.

Similarly, as shown in FIG. 4 (9), the Fermi level F _mn of the n-side metal electrode 24 is p.
Higher than the Fermi level F _mp side metal electrode 25, an energy band diagram when the Fermi level F _mp p-side metal electrode 25 fitted to the Fermi level F _t0 of the transition layer 23.

Similarly, as shown in FIG. 4 (10), the Fermi level F _mn of the n-side metal electrode 24 is p.
It is lower than the Fermi level F _{mp of the} side metal electrode 25, and is an energy band diagram when the Fermi level F _mp of the p-side metal electrode 25 is matched with the Fermi level F _t0 of the transition layer 23.

The results shown in the energy band diagrams shown in FIG. 4 are summarized in the following table.

[Table 1]

Embodiment 3 In the present invention, the cross-sectional area of the thermoelectric element is fixed, and the number of stages N thereof is N.
Can be increased to increase the electric potential energy of the electrons, the difference between the Fermi levels F _mn and F _mp of the metal electrodes at both ends can be made zero, and the current I _S when the voltage is zero can be increased. Incidentally, if the means for increasing the cross-sectional area of the thermoelectric element to increase the current I _S when the voltage is zero, the element becomes large.

FIG. 5 is a diagram for explaining that the semiconductor device according to the present invention can increase the number of stages of thermoelectric elements and increase the current in the state where the voltage is zero, and the symbols used in FIG. The same symbol represents the same part or has the same meaning.

In the figure, a to g are the number N of stages of thermoelectric elements.
The cross-sectional area of each thermoelectric element is 1 [mm ² ] and the resistance of the thermoelectric element is 0.001 [Ω].
Seebeck coefficients α _0n and α _0p are the same and are 0.2
[MV / ° K]. Table 2 shows the data when the experiment was conducted.
As shown below.

[0049]

[Table 2]

Embodiment 4 In the semiconductor device according to the present invention, it is possible to connect loads in series. In that case, in the load connected to the Fermi level of the metal electrode in the semiconductor device. The Fermi level of the metal electrode should be flat.

FIG. 6 is an explanatory diagram of a semiconductor device including a load for explaining the fourth embodiment, in which (A) shows energy.
A band diagram, (B) is an equivalent circuit diagram, and (C) is a diagram showing voltage / current characteristics. The same symbols as those used in FIGS. 1 to 5 represent the same parts or have the same meanings. Shall have.

In the figure, 27 is a load whose equivalent resistance is represented by R _d , 27 A is a metal electrode in the load, Q 1 is a semiconductor device according to the present invention, V _d is a voltage drop in the load 27, P is power consumption in R, R is resistance 2 in Q1
The total resistance obtained by adding Nr _0n and the equivalent resistance R _d is shown.

Here, the load 27 is a semiconductor element having an equivalent resistance of R _d and a metal electrode 27A coupled thereto, and the total resistance including the resistance 2Nr _0n of the semiconductor device Q1 and the equivalent resistance R _d of the load 27 is added. R is represented by the slope of the voltage-current characteristic shown in FIG. 6C, and R = (2Nr _0n + R _d ).
[Ω].

In the fourth embodiment, the metal electrode 27A in the load 27 is formed by the various means described in the first embodiment and the like.
For the difference between the Fermi level in the metal electrode 25 to the Fermi level of the semiconductor device Q1 can be made zero, a voltage between the metal electrodes 27A and the metal electrode 25 in a state where the current I _B flows It can be zero, so that no power is consumed in the bias power supply E _B.

By the way, in a superconducting device, when a load is connected in series and a bias voltage is applied across both ends of the superconducting device to pass a current, a voltage drop is always generated in the load.
It is impossible to bring the voltage to zero, so the power of the bias supply is consumed.

Fifth Embodiment In the semiconductor device according to the present invention, the M stages (M is an arbitrary positive integer) are cascade-connected to drive the diode within the reverse withstand voltage of the diode (1 / M). Therefore, it is possible to configure a device that operates at a high voltage M times as high as the reverse breakdown voltage. Similarly, by connecting M stages in parallel (1
/ M), the device can be driven within a permissible current of (M / M), so that a device that operates with a current M times the permissible current can be configured.

FIG. 7 is a block diagram of an essential part for explaining the fifth embodiment. FIG. 7A shows a case where cascade connection is made, and FIG.
Shows parallel connection, and (C) shows parallel connection and cascade connection.

In the figure, Q1, Q2 ... Qn are semiconductor devices, QA is a block in which semiconductor devices Q1 to Qn are connected in cascade, and QB is a block in which semiconductor devices Q1 to Qn are connected in parallel. .

The block QA shown in FIG. 7 (A) is suitable for high voltage, and the block Q shown in FIG. 7 (B).
B is suitable for large current, and the block connecting the block QA and the block QB shown in (C) is suitable for large current / high voltage.

Incidentally, since the reverse breakdown voltage of a normal diode is low, it can be applied only to a low voltage,
It cannot be applied to high-voltage devices exceeding the withstand voltage,
And since the allowable current in the diode is also low,
Again, it cannot be applied to high current devices.

Sixth Embodiment It is easy to construct a large current switching element by applying the construction described in the fifth embodiment, and the voltage E _B at the time of switch-on is zero and the voltage E _B at switch-off is zero. Since the electric current I _B is zero, the electric power required for switching is zero, and the electric power consumed by the bias power source at the time of large current switching is almost zero, so that very small electric power large current switching is possible.

Incidentally, in a normal switching element, the required power is P = I ² r, and the power is the current I
Since it rapidly increases with increasing, the electric power required for switching a large current is large, and therefore it is a subject to sufficiently reduce the resistance.

Seventh Embodiment A high-frequency low-frequency coil can be constructed by using the large-current switching element described in the sixth embodiment.

Usually, the figure of merit [Q = (2
πfL / r ₁ )] (f: frequency, L: inductance,
In order to increase (r ₁ : resistance), the inductance L must be increased. Therefore, the resistance r ₁ increases, resulting in a large voltage drop. Increasing the size is regarded as a problem.

The present invention can be implemented in many forms including the above-described embodiment, which will be exemplified below.

(Supplementary Note 1) n-side metal electrode (for example, n-side metal electrode 24) -thermoelectric element (for example, N-stage n-side thermoelectric element 2)
1) -Diode (eg transition layer (diode) 23)
-Thermoelectric element (for example, p-side thermoelectric element 22 in N stages) -The structure including the p-side metal electrode (for example, p-side metal electrode 25) laminated, and the n-side metal electrode and the p-side metal in a state in which a current is applied At least one of the energy band gap of the transition layer in the diode, the resistance of the thermoelectric element material, the Seebeck coefficient of the thermoelectric element material, and the number of stages of the thermoelectric element is set so that the difference in the Fermi level of the electrode becomes zero. A semiconductor device characterized by being adjusted. (1)

(Supplementary Note 2) A structure in which an n-side metal electrode, a thermoelectric element, a diode, a thermoelectric element, and a p-side metal electrode are laminated is defined as one unit, and a plurality of the one unit structure are connected in cascade or in parallel. The semiconductor device according to (Supplementary Note 1), which is connected or cascaded in parallel. (2)

(Supplementary Note 3) A high-current switching element is configured (Supplementary Note 1) or (Supplementary Note 2).
The semiconductor device described.

(Supplementary Note 4) The semiconductor device according to (Supplementary Note 1) or (Supplementary Note 2), characterized in that a high Q low frequency coil is formed.

(Supplementary Note 5) The n-side metal electrode and the p-side metal in the state where a current is applied to the semiconductor device having the structure in which the n-side metal electrode-thermoelectric element-diode-thermoelectric element-p-side metal electrode are laminated. A temperature difference is applied between the electrodes, and the n-side metal electrode and p
A method for driving a semiconductor device, wherein the difference in Fermi level from the side metal electrode is set to zero. (3)

(Supplementary Note 6) A Fermi of an n-side metal electrode and a p-side metal electrode is provided with a structure in which an n-side metal electrode, a thermoelectric element, a diode, a thermoelectric element, and a p-side metal electrode are laminated and a current is applied. Adjusting at least one of the energy band gap of the transition layer in the diode, the resistance of the thermoelectric element material, the Seebeck coefficient of the thermoelectric element material, and the number of stages of the thermoelectric element so that the level difference becomes zero. A method for driving a semiconductor device, which comprises operating a semiconductor device by connecting a load to the semiconductor device. (4)

[0072]

In the semiconductor device and the driving method thereof according to the present invention, the n-side metal electrode-thermoelectric element-diode-
Thermoelectric element-provided with a structure in which p-side metal electrodes are laminated, and in order to make the difference in the Fermi level between the n-side metal electrode and the p-side metal electrode to be zero when a current is applied, It is fundamental to adjust at least one of the energy band gap, the resistance of the thermoelectric element material, the Seebeck coefficient of the thermoelectric element material, and the number of stages of the thermoelectric element.

In the structure of the semiconductor device according to the present invention described above, the product of the voltage across the n-side metal electrode and the p-side metal electrode and the flowing current, that is, the electric power is zero, so that the load current is Flows without being supplied with voltage from a bias power supply, and the source of electric power in this case is spontaneous thermal energy converted into electric energy.

By using the above semiconductor device, a large current switching element, a low power loss element of a high frequency low frequency coil, a device using a high voltage / large current element as a load, and a power source for a microwave high output element are realized. The power consumption is extremely low.

[Brief description of drawings]

FIG. 1 is an energy band diagram in a semiconductor device for explaining the principle of the present invention.

FIG. 2 is a diagram showing electrical characteristics in the semiconductor device of the present invention described with reference to FIG.

FIG. 3 is an explanatory view of a main part of a slope showing the semiconductor device according to the first embodiment of the present invention.

FIG. 4 is an energy band diagram for explaining that the energy band changes by adjusting various parameters in the semiconductor device of the present invention.

FIG. 5 is a diagram for explaining that the semiconductor device according to the present invention can increase the number of thermoelectric elements and increase the current when the voltage is zero.

FIG. 6 is an explanatory diagram of a semiconductor device including a load for explaining a fourth embodiment.

FIG. 7 is a principal block diagram for explaining a fifth embodiment.

FIG. 8 is a diagram for explaining the operation of the diode.

[Explanation of symbols]

Reference Signs List 21 N-stage n-side thermoelectric element 22 N-stage p-side thermoelectric element 23 Transition layer (diode) 24 n-side metal electrode 25 p-side metal electrode 26 Bias power supply F _mn Fermi level at n-side metal electrode F _mp p Fermi level at the side metal electrode

Claims (4)

[Claims] 1. A Fermi level of an n-side metal electrode and a p-side metal electrode provided with a structure in which an n-side metal electrode, a thermoelectric element, a diode, a thermoelectric element, and a p-side metal electrode are laminated and a current is applied. The energy band gap of the transition layer in the diode, the resistance of the thermoelectric element material, the Seebeck coefficient of the thermoelectric element material, and the number of stages of the thermoelectric element so that the difference between A semiconductor device characterized by: 2. A structure in which an n-side metal electrode, a thermoelectric element, a diode, a thermoelectric element, and a p-side metal electrode are laminated is defined as one unit, and a plurality of the one-unit structure is connected in cascade, or
The semiconductor device according to claim 1, wherein the semiconductor device is connected in parallel or is connected in cascade. 3. A semiconductor device having a structure in which an n-side metal electrode, a thermoelectric element, a diode, a thermoelectric element, and a p-side metal electrode are stacked. A method for driving a semiconductor device, wherein a temperature difference is applied between the n-side metal electrode and the p-side metal electrode to reduce the Fermi level difference to zero. 4. A Fermi level of an n-side metal electrode and a p-side metal electrode provided with a structure in which an n-side metal electrode, a thermoelectric element, a diode, a thermoelectric element, and a p-side metal electrode are laminated and a current is applied. A semiconductor obtained by adjusting at least one of the energy band gap of the transition layer in the diode, the resistance of the thermoelectric element material, the Seebeck coefficient of the thermoelectric element material, and the number of stages of the thermoelectric element so that the difference between A method for driving a semiconductor device, comprising operating a device by connecting a load.