JP2003045788A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

(57) [Problem] To provide a substrate processing method and a substrate processing apparatus capable of preventing a solution from scattering at a notch portion of a substrate and reliably cleaning a notch portion and a bevel portion. SOLUTION: In a state where a wafer W is stationary, for example, a thinner 40 is discharged at a rate of 20 ml / min or less, more preferably 10 ml / min or less, by a solution nozzle 7.
That is, the thinner 40 is brought into contact with the notch portion Wn in a state where the thinner 40 is filled with the surface tension at the discharge tip portion of the solution nozzle 7. Then, from the state where the notch portion Wn is slightly shifted from the solution nozzle 7, for example, the thinner 4
By rotating the wafer W twice, more preferably one rotation at a low speed of 10 rpm while discharging 0 at 50 ml / min, the resist removal of only the bevel portion B is performed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for applying a resist to a semiconductor substrate in a semiconductor device manufacturing process, and more particularly to a substrate processing method and a substrate processing apparatus for removing the applied excess resist.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device, a photoresist is applied to the surface of a semiconductor wafer (hereinafter referred to as "wafer"), a mask pattern is exposed on the resist, and development is performed to form a resist on the wafer surface. A pattern is formed. The resist coating process and the developing process have been conventionally performed by a coating and developing treatment system.

Regarding resist coating, for example, spin coating in which a wafer is rotated and a resist film is coated by centrifugal force thereof is generally performed. In order to remove the excess resist adhering to the bevel portion which is the peripheral surface of the wafer by this resist coating process, while rotating the wafer, direct the nozzle that discharges the solution such as thinner toward the bevel portion. Is discharged for cleaning.

[0004]

However, in such a resist removing and cleaning process for the bevel portion, the solution discharged from the nozzle scatters in the form of mist, and the scattered solution is spread over the area other than the bevel portion of the wafer. This may extend to the area where a certain pattern is formed, causing problems such as product defects and quality deterioration. Particularly, the solution discharged to the notch portion of the wafer is likely to be scattered due to the cutout shape. In addition, because of this notch shape, the cleaning performance at the notch is also poor.

In view of the above circumstances, it is an object of the present invention to prevent the solution from scattering in the notch portion of the substrate and to reliably clean the notch portion and the bevel portion. It is to provide a processing device.

[0006]

To achieve the above object, a first aspect of the present invention is to provide a substrate by (a) a step of spin-coating a resist on the substrate and (b) a nozzle for ejecting a solution. A step in which the solution is discharged and attached to the notch portion of the substrate while the substrate is stationary and (c) the resist attached to the notch portion is removed from the back surface side of the substrate to the vicinity of the peripheral portion of the substrate by the nozzle. And rotating the substrate at least once while discharging the solution toward the bevel portion to remove the resist adhering to the bevel portion.

According to this structure, in the step (b), the solution is not scattered by supplying the solution only to the notch portion while the substrate is stationary, so that the circuit formation area on the substrate is prevented. It is possible to reliably remove the resist attached to the notch portion without adversely affecting it. Then, in the next step (c), the substrate is rotated once while ejecting the solution from the back surface side of the substrate toward the vicinity of the peripheral portion of the substrate, whereby the solution supplied to the rear surface side of the peripheral portion of the substrate is subjected to centrifugal force. It is supplied to the bevel part. As a result, the resist removing cleaning process can be performed only on the bevel portion without scattering the solution.

According to one aspect of the present invention, the discharge direction of the solution from the nozzle is substantially perpendicular to the substrate surface.
With this, for example, by making the discharge amount of the solution small, the notch portion can be brought into contact with the solution in a state where the solution is piled up on the tip portion of the nozzle, so that the resist of the notch portion can be removed without scattering the solution. Can be removed.

According to one aspect of the present invention, the discharge of the solution performed in the step (b) is 20 ml / min or less. With this, the notch portion can be brought into contact with the solution in a state where the solution is piled up on the tip portion of the nozzle, so that the resist in the notch portion can be removed without scattering the solution.

According to one aspect of the present invention, the discharge of the solution performed in the step (c) is 50 ml / min to 100
ml / min. As a result, the solution supplied to the back surface of the peripheral portion of the substrate is transferred to the bevel portion by centrifugal force and is supplied, and the resist in the bevel portion can be removed.

According to one aspect of the present invention, the rotation of the substrate in the step (c) is set to 2 rpm or less at 10 rpm. As described above, by setting the rotation speed of the substrate to be low and the rotation to be 2 or less, it is possible to prevent the solution from scattering due to the notch shape of the notch portion.

According to one aspect of the present invention, after the step (a), while the substrate coated with the resist is rotated, a hot air of an inert gas is applied to at least a peripheral portion of the substrate. Is further provided. This allows
Since the resist near the periphery of the substrate is cured, the step (b)
And in the step (c), without resist sagging,
The resist removal cleaning can be performed cleanly and sharply.

According to one aspect of the present invention, the method further comprises a step of detecting the notch portion before the step (b). As a result, the discharge position at the tip of the nozzle can be reliably aligned with the notch.

According to a second aspect of the present invention, (a) a step of spin-coating a resist on a substrate, and (b) a nozzle for discharging a solution, the solution is placed in a notch portion of the substrate while the substrate is stationary. A step of discharging and adhering and removing the resist adhering to the notch portion; and (c) rotating the substrate,
A step of removing a resist attached to the bevel portion by bringing a cleaning member containing a solution into contact with the bevel portion of the substrate.

According to this structure, in the step (b), the solution is applied only to the notch portion while the substrate is stationary.
For example, by supplying at 20 ml / min or less, the solution is not scattered, so that the resist attached to the notch portion can be reliably removed without adversely affecting the circuit formation region on the substrate. Then, in the next step (c), for example, by rotating the substrate once, it is possible to perform the resist removal cleaning treatment of only the bevel portion without scattering the solution.

A third aspect of the present invention is a rotating means for holding and rotating the substrate, a means for supplying a resist onto the substrate while rotating the substrate by the rotating means, and a solution for at least a notch portion of the substrate. And a means for removing the resist adhering to the notch portion and a bevel portion of the substrate, which is provided so as to be separable from and into the bevel portion of the substrate. A cleaning member for removing the resist attached to the portion.

Further features and advantages of the present invention will become more apparent with reference to the accompanying drawings and the description of the embodiments of the invention.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

1 to 3 are views showing the overall constitution of a coating and developing treatment system to which the present invention is applied. FIG. 1 is a plan view thereof, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.

In the coating and developing treatment system 1, a plurality of semiconductor wafers W as substrates to be treated are transferred into or out of the system by a plurality of wafer cassettes CR, for example, in units of 25 wafers, or wafers are transferred to the wafer cassette CR. A cassette station 10 for loading / unloading W, and a processing station in which various single-wafer processing units for performing a predetermined process on the wafer W one by one in a coating / developing process are arranged in multiple stages at predetermined positions. 11 and an interface section 12 for transferring a wafer W between the processing station 11 and an exposure apparatus (not shown) provided adjacent to the processing station 11 are integrally connected.

In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are provided at the positions of the protrusions 20a on the cassette mounting table 20, with their respective wafer entrances and exits facing the processing station 11 side. A wafer carrier 21 that is placed in a line in the direction and is movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It is supposed to do. Further, the wafer carrier 21 is configured to be rotatable in the θ direction, and as will be described later, the alignment unit (ALIM) and the extension unit (ALIM) belonging to the multi-stage unit section of the third group G3 on the processing station 11 side. EXT) is also accessible.

In the processing station 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided in the central portion, and all the processing units are surrounded by one set or a plurality of sets in multiple stages. It is located in. In this example, 5
In the multi-stage arrangement configuration of the groups G1, G2, G3, G4, G5, the multi-stage units of the first and second groups G1 and G2 are juxtaposed on the front side (front side in FIG. 1) of the system, and the third group G3 The multistage unit is arranged adjacent to the cassette station 10, the multistage unit of the fourth group G4 is arranged adjacent to the interface unit 12, and the multistage unit of the fifth group G5 is arranged on the back side. The fifth group G5 is
Rail 2 for maintenance of main wafer transfer mechanism 22
It is configured to be movable along 5.

The main wafer transfer mechanism is equipped with a wafer transfer device 46 inside the cylindrical support 49 so as to be vertically movable (Z direction). The cylindrical support body 49 is connected to a rotation shaft of a motor (not shown), and the rotation driving force of the motor causes the wafer transfer device 4 to rotate about the rotation shaft.
6 and the wafer transfer device 46.
Is rotatable in the θ direction.

As shown in FIG. 2, in the first set G1, two spinner type processing units, for example, a resist coating processing unit (COT), which carry out a predetermined processing by placing the wafer W on the spin chuck in the cup CP. And the development processing units (DEV) are stacked in two stages in order from the bottom. Also in the second group G2, two spinner type processing units, for example, a resist coating processing unit (COT) and a development processing unit (DEV) are stacked in two stages in order from the bottom. In the resist coating processing unit (COT), draining of the resist solution is troublesome both mechanically and in terms of maintenance. Therefore, it is preferable to arrange the resist solution in the lower stage. But,
It is also possible to arrange them in the upper stage if necessary.

As shown in FIG. 3, in the third group G3, an oven type processing unit for placing the wafer W on a mounting table and performing a predetermined process, for example, a cooling unit (COL) and an adhesion unit in order from the bottom. (AD), alignment unit (ALIM), extension unit (EXT), pre-baking unit (PREBAK)
E) and the post-baking unit (POBAKE) are stacked. Also in the fourth group G4, an oven type processing unit, for example, a cooling unit (CO
L) has 2 stages, extension cooling unit (EXTCOL), extension unit (EX
T), a pre-baking unit (PREBAKE) and a post-baking unit (POBAKE) are stacked.

As described above, the cooling units (COL) and (EXTCOL) having a low processing temperature are arranged in the lower stage, and the baking units (PREBAKE) and the post-baking units (POBAKE) having a high processing temperature are arranged in the upper stage. Thermal mutual interference between them can be reduced. However, a random multi-stage arrangement is also possible.

The interface section 12 has the same size as the processing station 11 in the depth direction, but is made small in the width direction. A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front surface of the interface portion 12, a peripheral exposure device 23 is arranged on the rear surface, and a wafer carrier 24 is arranged on the central portion. It is provided. This wafer carrier 24
Moves in the X and Z directions to access both cassettes CR and BR and the peripheral exposure device 23. Further, the wafer carrier 24 is configured to be rotatable in the θ direction, and is transferred to the extension unit (EXT) belonging to the multistage unit of the fourth group G4 on the processing station 11 side and the wafer transfer on the adjacent exposure apparatus side. A platform (not shown) is also accessible.

4 and 5 are a plan view and a cross-sectional view showing the resist coating processing unit (COT). A waste liquid pipe 5 is provided at the center of this resist coating unit (COT).
An annular cup CΡ having 3 is arranged, and a spin chuck 52 for horizontally holding the substrate is arranged inside the cup CΡ. The spin chuck 52 is rotationally driven by a drive motor 54 while the wafer W is fixedly held by vacuum suction. This drive motor 5
The unit 4 is arranged so as to be able to move up and down in an opening 51a provided in the unit bottom plate 51, and is connected to a lifting drive unit 60 and a lifting guide unit 62, which are, for example, air cylinders, via a cap-shaped flange member 58, which is made of, for example, aluminum. ing.

A supply pipe 83 extending from a resist supply source (not shown) is connected to the nozzle 77 for discharging the resist onto the surface of the wafer W. The nozzle 77 is detachably attached to the tip of the nozzle scan arm 76 via the nozzle holder 72. The nozzle scan arm 76 is attached to the upper end of a vertical support member 75 that is horizontally movable on a guide rail 74 laid in one direction (Y direction) on the unit bottom plate 51, and is driven in the Y direction (not shown). The mechanism moves in the Y direction integrally with the vertical support member 75. A nozzle standby portion 73 for waiting the nozzle 77 is provided on the side of the cup CP, and the nozzle is replaced as needed to perform the coating process.

Further, as shown in FIG. 4, the resist processing unit of this embodiment is provided with a warm air nozzle 5 for supplying warm air to the wafer W to dry the resist. The warm air nozzle 5 is held by a nozzle holding portion 6 that slides by a drive mechanism (not shown) along the longitudinal direction of the support arm 3, for example. The support arm 3 is rotatably provided by, for example, a motor 29, and stands by at a standby position indicated by a chain line when resist is supplied onto the wafer by the movement of the nozzle scan arm 76.

On the back surface side of the wafer W in the cup CP, a solution nozzle 7 for ejecting a solution for removing and cleaning excess resist attached to the bevel portion which is the peripheral portion of the wafer W is arranged. . The solution nozzle 7 is adapted to eject thinner supplied from a thinner supply source 26, for example. The thinner discharge direction of the solution nozzle 7 is substantially perpendicular to the back surface of the wafer W as shown in FIGS. 6 and 7, and the discharge position is the bevel portion B of the wafer W.
The range is from the side surface Ba to the center side of approximately 1 mm. The 1 mm is about the size of the notch of the notch portion Wn, and almost coincides with the portion where the bevel portion B is formed. Further, the distance t from the tip, which is the ejection portion of the solution nozzle 7, to the wafer W is, for example, 0.5 mm.
As described later, the distance is set such that the thinner 40 adheres to the back surface side of the wafer W in a state where the thinner 40 is raised by the surface tension at the discharge tip even if the discharge amount of the solution nozzle 7 is minute as described later. There is.

FIG. 8 is a diagram showing a control system according to this embodiment. The warm air nozzle 5 includes, for example, a heater 31 in a nitrogen gas supply source 32 that supplies nitrogen gas as an inert gas.
On the wafer W, for example, 30 ° C. to 50 ° C.
It is designed to supply nitrogen gas. A sensor 33 that detects the position of the notch of the wafer W is provided on the solution nozzle 7. As the sensor 33, for example, a reflection type optical sensor or the like is used, and it is confirmed by the sensor 33 that the notch portion is at a predetermined position. The sensor 33 is not limited to a reflection type optical sensor, and a sensor such as a CCD may be used.

The control unit 8 controls the rotation speed of the drive motor 54 based on the detection result of the sensor 33. Further, the controller 8 controls the hot air supply operation including the adjustment valve 30 for adjusting the discharge amount of the solution nozzle 7 and the movement operation of the hot air nozzle 5.

Next, a series of processing steps of the coating and developing processing system 1 described above will be described.

First, in the cassette station 10, the wafer transfer body 22 accesses the cassette CR which contains the unprocessed wafer on the cassette mounting table 20,
One semiconductor wafer W is taken out from the cassette CR and is transferred to the alignment unit (ALIM).
After the wafer W is aligned by this alignment unit (ALIM), it is transferred to the adhesion unit (AD) by the main wafer transfer mechanism 22 and subjected to a hydrophobic treatment, and then in the cooling unit (COL). A predetermined cooling process is performed. After that, it is conveyed to a resist coating processing unit (COT) and subjected to predetermined processing as described later. And the pre-baking unit (PR
A predetermined heating process is performed by EBAKE), a cooling process is performed by a cooling unit (COL), and then an exposure process is performed by a wafer carrier 24 via an interface section 12 by an exposure device (not shown). After the exposure processing is completed, the wafer W is processed in the development processing unit (DEV).
Then, it is carried to a developing process, and a predetermined baking process is carried out in a post baking unit (POBAKE). Then, the wafer W is subjected to a predetermined cooling process by a cooling unit (COL), and then the extension unit (EX
It is returned to the cassette CR via T).

Next, the flow shown in FIG. 9, FIG. 10 and FIG.
1 is referred to, a resist coating processing unit (CO
The processing step in T) will be described.

As shown in FIG. 10A, after the resist is supplied from the nozzle 77 to the wafer W held on the spin chuck 52 or during the resist supply, the wafer W rotates at a rotation speed of 2500 rpm, for example. As a result, the resist R is applied to the entire surface of the wafer W (step 1). Then, as shown in FIG.
The shake-off drying process is performed at a rotation speed of 00 rpm (step 2). Next, as shown in FIG. 10C, after the warm air nozzle 5 has moved to near the peripheral portion of the wafer W, the wafer W
While rotating, the resist near the peripheral portion of the wafer W is dried with warm air (step 3).

Then, the notch portion is detected by the sensor 33 (step 4). That is, FIG. 10 (d) and FIG.
As shown in FIG. 1A, the wafer W is rotated by the angle θ until the notch Wn is located at the position directly above the solution nozzle 7.
Then, as shown in FIG. 11B, while the wafer W is stationary, the solution nozzle 7 is used to remove the thinner 40, for example.
0 ml / min or less, more preferably 10 ml / min
The following is discharged (step 5). That is, the solution nozzle 7
The thinner 40 is brought into contact with the notch Wn in a state where the thinner 40 is piled up by the surface tension at the discharge tip portion of the above. In this way, by supplying the thin discharge amount of the thinner to only the notch portion while the wafer W is stationary, the thinner is not scattered unlike the conventional case and the circuit forming area on the wafer W is not adversely affected. It is possible to reliably remove the resist attached to the notch portion Wn.

Next, as shown in FIG. 11 (c), from the state in which the notch Wn is slightly displaced from the solution nozzle 7, for example, as shown in FIG.
The wafer W is rotated twice, more preferably once, while ejecting at a time of min (step 6). The rotation speed of the wafer W at this time is set to a low speed rotation of 10 rpm, for example. Thus, by rotating the wafer W for 1 to 2 rotations at a low speed of 10 rpm, the thinner is transmitted by the centrifugal force to the wafer surface portion of the bevel portion B without being scattered, and the thinner is supplied. As a result, the resist removing and cleaning process for only the bevel portion B can be performed without scattering thinner. Moreover, since the peripheral portion of the wafer W is dried in step 3, the resist is cured to some extent, and the resist attached to the bevel portion when the thinner is supplied can be removed cleanly. That is, the edge portion of the removed resist can be left sharp.

Finally, the wafer W is rotated and hot air is supplied while moving the hot air nozzle 5 from the center of the wafer W to the peripheral portion, whereby the resist on the entire surface of the wafer W is dried. .

In the above embodiment, the wafer W
Although the rotation speed of the wafer W is set to 10 rpm, the rotation speed of the wafer W may be set to 10 rpm or less in order to prevent scattering of thinner. Further, when priority is given to throughput improvement, it goes without saying that the scattering amount of the thinner 40 is increased by setting the rotation speed of the wafer W to 10 rpm or more.

As described above, according to this embodiment, the resist adhered to the notch portion Wn and the bevel portion B can be surely removed and cleaned, and thus the generation of particles can be prevented. In addition, since thinner can be prevented from scattering, product defects can be suppressed and yield can be improved.

12 and 13 are plan views of a resist coating processing unit according to another embodiment of the present invention. 12 and 13, the same components as those in FIG. 4 are designated by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 13, a cleaning member 9 containing a solution such as thinner is provided as a means for removing and cleaning the excess resist adhering to the bevel portion of the wafer W. The cleaning member 9 is, for example, a brush-shaped or sponge-shaped member and is made of a material into which thinner is soaked. As shown in FIG. 12, the cleaning member 9 is attached to the tip end portion 2a of the support arm 2 rotatably provided by the motor 4, for example, so that the thinner bath 28 and the wafer W in which thinner is stored. It can be rotated back and forth between the peripheral portion. The rotation operation and the like are also controlled by the control unit 8.

Referring to FIG. 14, in the resist coating processing unit of the present embodiment, as in the above-described embodiment, resist coating processing (step 1), then shake-off drying processing (step 2), and the vicinity of the wafer peripheral portion are performed. A warm air drying process (step 3), a notch Wn detection (step 4), and a resist removal cleaning process (step 5) for the notch Wn are performed (FIGS. 10A to 10D and FIG. 11A). , (B)). Therefore, also in the present embodiment, as in the above-described embodiment, since the processing is performed at a low discharge rate of 20 ml / min or less while the wafer W is stationary, only the notch portion Wn can be reliably generated without scattering thinner. The resist removal cleaning process can be performed.

Next, as shown in FIG. 15A, the wafer W is rotated by, for example, a predetermined angle θ so that the notch portion Wn comes to a predetermined position (step 6), after which the cleaning member 9 is turned on. It moves from the thinner bus 28 to the vicinity of the notch portion Wn and is arranged at a position where it abuts on the bevel portion. Then, as shown in FIGS. 15B and 16, for example, by rotating the wafer W once at a low speed of 10 rpm, the thinner 40 is reliably attached to the bevel portion B while reliably preventing the thinner from scattering.
Can be supplied, and the excess resist attached to the bevel portion B can be removed and washed (step 7).

Also according to the present embodiment, the resist attached to the notch portion Wn and the bevel portion B can be surely removed and cleaned, and thus the generation of particles can be prevented.

The present invention is not limited to the embodiments described above. For example, in each of the above embodiments,
In the bevel portion resist removal process shown in FIG. 11D, the wafer is rotated preferably once and the thinner is not supplied to the notch portion. However, since the wafer W is rotated at a low speed of 10 rpm, the notch If the thinner does not scatter in some parts, the wafer W can be rotated once or more or twice or more.

[0049]

As described above, according to the present invention,
It is possible to prevent the solution from scattering in the notch portion of the substrate and surely clean the notch portion and the bevel portion. This suppresses product defects and contributes to yield improvement.

[Brief description of drawings]

FIG. 1 is a plan view of a coating and developing treatment system to which the present invention is applied.

FIG. 2 is a front view of the coating and developing treatment system shown in FIG.

3 is a rear view of the coating and developing treatment system shown in FIG.

FIG. 4 is a plan view of a resist coating processing unit according to an embodiment of the present invention.

5 is a cross-sectional view of the resist coating processing unit shown in FIG.

FIG. 6 is an enlarged plan view showing a notch portion.

FIG. 7 is a side view of a solution nozzle that discharges a solution from immediately below a notch portion.

FIG. 8 is a diagram showing a control system of the resist coating processing unit according to the embodiment.

FIG. 9 is a flowchart showing processing steps of the resist coating processing unit according to the embodiment.

FIG. 10 is an operation diagram sequentially showing processing steps of the resist coating processing unit according to the embodiment.

FIG. 11 is an operation diagram sequentially showing processing steps of the resist coating processing unit according to the embodiment.

FIG. 12 is a plan view showing a resist coating processing unit according to another embodiment.

FIG. 13 is a diagram showing a control system of a resist coating processing unit according to another embodiment.

FIG. 14 is a flowchart showing a resist coating processing unit processing step according to another embodiment.

FIG. 15 is a plan view sequentially showing the operation of the resist removal cleaning processing of the bevel portion by the cleaning member.

FIG. 16 is an enlarged side view showing the operation of the resist removal cleaning processing of the bevel portion by the cleaning member.

[Explanation of symbols]

W: Semiconductor wafer B ... Bevel part Wn ... Notch R ... resist 4 ... Motor 5 ... Warm air nozzle 7 ... Solution nozzle 8 ... Control unit 9 ... Cleaning member 26 ... Thinner supply source 30 ... Adjusting valve 31 ... Heater 33 ... Sensor 40 ... Thinna 54 ... Drive motor 72 ... Nozzle holder 77 ... Nozzle

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ identification code FI theme code (reference) G03F 7/16 502 H01L 21/30 577 (72) Inventor Hirokazu Inada 5-3 Akasaka, Minato-ku, Tokyo No. 6 TBS Broadcasting Center in Tokyo Electron Ltd. (72) Inventor Kazuyoshi Mizumoto 5-3-6 Akasaka, Minato-ku, Tokyo TBS Broadcasting Center In Tokyo Electron Ltd. (72) Inventor Koichiro Tanaka Port of Tokyo 5-6-3 Akasaka, Tokyo TBS Broadcast Center Tokyo Electron Co., Ltd. (72) Inventor Shuji Kyoda 5-3-6 Akasaka, Minato-ku, Tokyo TBS Broadcast Center Tokyo Electron Co., Ltd. (72) Inventor Hori Shinya 5-3-6 Akasaka, Minato-ku, Tokyo TBS Broadcasting Center Tokyo Electron Ltd. In-house F-term (reference) 2H025 AA18 EA05 4D075 AC64 AC79 AC84 AC91 AC93 AC94 BB24Y BB26Y BB33Y BB57Y BB63Y BB65Y BB69Y CA47 DA08 DC22 EA45 4F042 AA02 AA07 BA05 BA08 BA10 BA12 CC04 CC10 CC11 EB17 EB26 EB28 5F046 MA05 MA06

Claims (16)

[Claims] 1. A process of (a) spin-coating a resist on a substrate, and (b) a nozzle for ejecting a solution, ejecting and adhering the solution onto a notch portion of the substrate while the substrate is stationary, A step of removing the resist adhering to the notch portion, and (c) at least 1 step of the substrate while discharging the solution from the back surface side of the substrate toward the vicinity of the peripheral edge portion of the substrate by the nozzle.
And a step of removing the resist adhering to the bevel portion by rotating the substrate processing method. 2. The substrate processing method according to claim 1, wherein the solution ejection direction of the nozzle is substantially perpendicular to the substrate surface. 3. The substrate processing method according to claim 1, wherein the discharge of the solution performed in the step (b) is 20 ml / min.
The following is a substrate processing method. 4. Any one of claims 1 to 3
In the substrate processing method described in the item 1, the discharge of the solution performed in the step (c) is 50 ml / min.
A substrate processing method, wherein the substrate processing method is about 100 ml / min. 5. The substrate processing method according to claim 4, wherein the rotation of the substrate in the step (c) is 2 at 10 rpm.
A substrate processing method, characterized in that the rotation is performed at most. 6. Any one of claims 1 to 5
In the substrate processing method as described in the item 1, after the step (a), the method further comprises a step of applying a warm air of an inert gas to at least a peripheral portion of the substrate while rotating the substrate coated with the resist. A substrate processing method characterized by the above. 7. The substrate processing method according to claim 6, further comprising a step of detecting the notch portion before the step (b). 8. A process of: (a) spin-coating a resist on a substrate; and (b) a nozzle for ejecting the solution, ejecting and adhering the solution onto a notch portion of the substrate while the substrate is stationary, A step of removing the resist adhering to the notch portion, and (c) removing the resist adhering to the bevel portion by bringing a cleaning member containing a solution into contact with the bevel portion of the substrate while rotating the substrate. A substrate processing method, comprising: 9. The substrate processing method according to claim 8, wherein the ejection direction of the nozzle is substantially perpendicular to the substrate surface. 10. The substrate processing method according to claim 8 or 9, wherein the discharge of the solution performed in the step (b) is 20 ml / min.
The following is a substrate processing method. 11. The substrate processing method according to claim 8, wherein the rotation of the substrate in step (c) is one rotation. 12. The substrate processing method according to claim 8, wherein after the step (a), at least the substrate coated with the resist is rotated while rotating the substrate coated with the resist. The substrate processing method further comprising a step of applying warm air of an inert gas to the peripheral portion. 13. The substrate processing method according to claim 8, further comprising: a step of detecting the notch portion before the step (b). Substrate processing method. 14. A rotating means for holding and rotating the substrate, a means for supplying a resist onto the substrate while rotating the substrate by the rotating means, and a solution is discharged to at least a notch portion of the substrate to form the notch portion. And a means for removing the resist adhering to the bevel part of the substrate, containing the solution and removing the resist adhering to the bevel part when the bevel part is contacted. And a cleaning member for cleaning the substrate. 15. The substrate processing apparatus according to claim 14, wherein the means for removing the resist is arranged on a peripheral portion on the back surface side of the substrate held by the rotating means, and the ejection direction of the solution is the substrate surface. A substrate processing apparatus comprising a nozzle that is substantially perpendicular to the nozzle. 16. The substrate processing apparatus according to claim 14 or 15, further comprising means for applying warm air of an inert gas to at least a peripheral portion of the substrate to which the resist has been supplied. Substrate processing equipment.