JP2002339078A - Wafer jig for plating - Google Patents
Wafer jig for platingInfo
- Publication number
- JP2002339078A JP2002339078A JP2001148728A JP2001148728A JP2002339078A JP 2002339078 A JP2002339078 A JP 2002339078A JP 2001148728 A JP2001148728 A JP 2001148728A JP 2001148728 A JP2001148728 A JP 2001148728A JP 2002339078 A JP2002339078 A JP 2002339078A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- jig
- plating
- screw
- common
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000007747 plating Methods 0.000 title claims abstract description 49
- 230000007246 mechanism Effects 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000003825 pressing Methods 0.000 claims 1
- 238000007772 electroless plating Methods 0.000 abstract description 8
- 125000006850 spacer group Chemical group 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000004904 shortening Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】
【課題】ウェハ治具に対する調整をある程度の数量一括
にし、生産効率の向上する無電解めっきを可能とするめ
っき用ウェハ治具を提供する。
【解決手段】めっき用ウェハ治具１０は、半導体ウェハ
ＷＦと互いに電気的に絶縁関係を保つウェハ載置板１１
とウェハ周縁部近傍に密着する上蓋部材１２とで、ウェ
ハＷＦに関しその主表面領域を露出させながら狭持する
それぞれの治具ユニット１０１〜１０３を有する。治具
ユニット１０１〜１０３は、スペーサーとなる弾性部材
１４をそれぞれ介して連なり、各々の治具ユニットがま
とめて狭持されるための共有締め付け機構１５が構成さ
れる。
(57) [Problem] To provide a plating wafer jig capable of performing electroless plating for improving the production efficiency by making adjustments to the wafer jig in a certain number of batches. Kind Code: A1 A wafer jig for plating includes a wafer mounting plate for maintaining an electrically insulating relationship with a semiconductor wafer.
And jig units 101 to 103 which hold the wafer WF while exposing the main surface area thereof with the upper lid member 12 which is in close contact with the periphery of the wafer. The jig units 101 to 103 are connected via an elastic member 14 serving as a spacer, and a shared fastening mechanism 15 for holding the respective jig units together is configured.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置製造に
係り、特に無電解めっき法でバンプ電極を形成する際の
めっき用ウェハ治具に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of semiconductor devices, and more particularly, to a plating jig for forming a bump electrode by an electroless plating method.
【０００２】[0002]
【従来の技術】半導体集積回路の高集積化、半導体チッ
プの縮小化が進むと、微細ピッチの端子接続に対応可能
な実装技術が要求される。この要求に対応しやすい実装
技術として、ＴＣＰ（Tape Carrier Package）等に利用
されるＴＡＢ（Tape AutomatedBonding）実装があげら
れる。2. Description of the Related Art As the degree of integration of semiconductor integrated circuits increases and the size of semiconductor chips decreases, mounting technology that can support terminal connection at a fine pitch is required. As a mounting technology that can easily respond to this request, there is a TAB (Tape Automate Bonding) mounting used for a TCP (Tape Carrier Package) or the like.
【０００３】ＴＡＢ実装においてリード端子はバンプ電
極に接続される。バンプ電極はＡｕバンプが代表的であ
り、その形成は電解めっき法によるものが一般的であ
る。電解めっき法によるＡｕバンプ電極の形成方法を以
下に説明する。In TAB mounting, lead terminals are connected to bump electrodes. The bump electrode is typically an Au bump, and is generally formed by an electrolytic plating method. A method for forming an Au bump electrode by an electrolytic plating method will be described below.
【０００４】例えば内部の半導体素子に繋がるＡｌパッ
ドが電気的接続領域表面を露出させ周囲をパッシベーシ
ョン膜が被覆している。まず、バリアメタル層及び保護
金属層の積層、すなわちアンダーバンプメタル層をスパ
ッタ法により形成する。その後、フォトリソグラフィ技
術によりＡｌパッドの電気的接続領域及びその周囲部を
露出させたバンプ形成用のレジストを形成する。次に、
このレジストのパターンに従って電解めっき法によりＡ
ｕをめっき成長させる。その後、レジストを剥離してか
らめっき成長したＡｕをマスクにしてアンダーバンプメ
タル層をウェットエッチングする（層の種類数分）。そ
の後はアニールなどを経てＡｕバンプを形成する。各所
で適宜洗浄工程も入る。[0004] For example, an Al pad connected to an internal semiconductor element exposes the surface of an electrical connection region, and the periphery is covered with a passivation film. First, a barrier metal layer and a protective metal layer are stacked, that is, an under bump metal layer is formed by a sputtering method. Thereafter, a resist for bump formation is formed by exposing the electrical connection region of the Al pad and its peripheral portion by photolithography. next,
In accordance with the pattern of this resist, A
u is plated and grown. Thereafter, the under bump metal layer is wet-etched using the Au grown by plating after removing the resist as a mask (for the number of types of layers). Thereafter, an Au bump is formed through annealing or the like. A washing step is appropriately performed in each place.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記電
解めっき法によるバンプ形成プロセスは長く、よりいっ
そうの短縮合理化が要求されている。そこで、最近提案
されているのが、無電解めっき法によるバンプ電極の形
成である。However, the process of forming a bump by the above-described electrolytic plating method is long, and further reduction and rationalization are required. Therefore, recently, formation of a bump electrode by an electroless plating method has been proposed.
【０００６】無電解めっき法で形成したバンプ電極は、
アンダーバンプメタル層のスパッタ形成及びエッチング
が省略できる。さらに、めっき成長用のレジスト形成の
省略も期待できる。このようなことから、大幅なプロセ
スの短縮が可能で、安価で納期の早いバンプ電極の形成
が実現されるものとして注目されている。The bump electrodes formed by the electroless plating method
Sputter formation and etching of the under bump metal layer can be omitted. Further, the omission of formation of a resist for plating growth can be expected. For these reasons, attention has been paid to the fact that the process can be significantly shortened, and the formation of a bump electrode that is inexpensive and has a short delivery time is realized.
【０００７】無電解めっき法でバンプ電極を形成するに
あたり、めっき液に漬ける半導体ウェハのグランド効果
が問題になる。例えば、アルミパッド上にバンプ用のめ
っき金属を析出させる際、アルミパッドの電位によって
めっきレートが異なってくるのである。In forming bump electrodes by electroless plating, a ground effect of a semiconductor wafer immersed in a plating solution becomes a problem. For example, when depositing a plating metal for a bump on an aluminum pad, the plating rate varies depending on the potential of the aluminum pad.
【０００８】すなわち、アルミパッドは基板のＳｉと接
触抵抗を伴って繋がっている。基板のＳｉはめっき液に
導通し、基板の電子がめっき液に放出されるとアルミパ
ッドの電気的な位置が移動する。That is, the aluminum pad is connected to Si on the substrate with a contact resistance. The Si of the substrate is conducted to the plating solution, and when the electrons of the substrate are released into the plating solution, the electrical position of the aluminum pad moves.
【０００９】アルミパッドはめっきの前処理として、パ
ッド表面にＺｎを置換する処理、いわゆるジンケート処
理を施す。ジンケート処理はＺｎイオンの入った処理液
に浸漬し、２Ａｌ＋３Ｚｎ2+→２Ａｌ3+＋３Ｚｎの反応
によりＺｎを置換するものである。The aluminum pad is subjected to a so-called zincate treatment as a pretreatment for plating, in which the surface of the pad is replaced with Zn. The zincate treatment is to immerse in a treatment liquid containing Zn ions and replace Zn by a reaction of 2Al + 3Zn 2+ → 2Al 3+ + 3Zn.
【００１０】このＺｎの置換がアルミパッドの電位に左
右され、後のめっき金属の析出に影響を及ぼす。すなわ
ち、グランド効果の影響により化学反応のための電子が
減少してしまう結果、イオン化結合が不活性となり、ア
ルミパッド表面上のＺｎの置換が十分とはいえない状態
になる。The substitution of Zn depends on the potential of the aluminum pad and affects the deposition of the plating metal later. In other words, the number of electrons for the chemical reaction decreases due to the influence of the ground effect. As a result, the ionized bond becomes inactive, and the substitution of Zn on the surface of the aluminum pad is not sufficient.
【００１１】このようなグランド効果の影響を防ぐため
に、ウェハ裏面及び周縁部にレジストを相当量厚く塗布
する措置、または、ウェハ裏面及び周縁部を覆うウェハ
治具の利用が提案されている。すなわち、めっきに関す
る処理液がウェハ周縁部近傍及び裏面に回り込まないよ
うに対策する。In order to prevent the influence of such a ground effect, measures have been proposed to apply a considerably large amount of resist to the back surface and peripheral portion of the wafer, or to use a wafer jig for covering the back surface and peripheral portion of the wafer. That is, measures are taken so that the processing solution relating to plating does not flow around the wafer periphery and the back surface.
【００１２】しかしながら、前者のウェハ裏面へのレジ
スト塗布は、スピンコーターにおける回転テーブルにバ
ンプ形成面であるウェハ主面側をチャック（真空吸着）
して実施される。ウェハ主面側を接触させるのであるか
ら、バンプ形成面を少なからず損傷させる場合がある。
バンプ形成面では微小な傷でも転写されればその後のバ
ンプ電極形成時のめっき成長は正常でなくなる恐れがあ
る。However, in the former case, the resist is applied to the back surface of the wafer by chucking (vacuum suction) the main surface of the wafer, which is the bump forming surface, on a rotary table in a spin coater.
It will be implemented. Since the wafer main surface is brought into contact, the bump formation surface may be considerably damaged.
If even minute scratches are transferred on the bump formation surface, the plating growth during the subsequent bump electrode formation may not be normal.
【００１３】後者のウェハ治具に関しては、電解めっき
の際にウェハ裏面及び周縁部を覆い固定するウェハ治具
と同様の構成を利用することが考えられている。しかし
ながら、ウェハ１枚毎にウェハ治具を締め付け調整しな
ければならず、生産効率の低下を招いていた。Regarding the latter wafer jig, it has been considered to use the same configuration as that of a wafer jig that covers and fixes the back surface and peripheral portion of the wafer during electrolytic plating. However, it is necessary to tighten and adjust the wafer jig for each wafer, resulting in a decrease in production efficiency.
【００１４】本発明は上記のような事情を考慮してなさ
れたもので、ウェハ治具に対する調整をある程度の数量
一括にし、生産効率の向上する無電解めっきを可能とす
るめっき用ウェハ治具を提供しようとするものである。The present invention has been made in view of the above-mentioned circumstances, and has been made in consideration of the above-mentioned circumstances. It is something to offer.
【００１５】[0015]
【課題を解決するための手段】本発明に係るめっき用ウ
ェハ治具は、それぞれ半導体ウェハと電気的に絶縁関係
にあるウェハ載置板とウェハ周縁部近傍に密着する上蓋
部材とで前記ウェハに関しその主表面領域を露出させな
がら狭持する治具ユニットと、前記治具ユニットが所定
数だけ間に弾性部材を介して連なり、各々の治具ユニッ
トが所定数まとめて狭持されるための共有締め付け機構
とを具備したことを特徴とする。A plating jig according to the present invention relates to a wafer mounting plate which is electrically insulated from a semiconductor wafer and an upper lid member which is in close contact with the periphery of the wafer. A jig unit for holding the jig unit while exposing its main surface area, and a jig unit connected to the jig unit by a predetermined number via an elastic member so that each jig unit is held by a predetermined number at a time. And a tightening mechanism.
【００１６】上記本発明に係るめっき用ウェハ治具によ
れば、共有締め付け機構によって、複数の治具ユニット
が所定数まとめて狭持される。これにより、ウェハ治具
のセットに関し時間短縮に寄与する。According to the plating jig of the present invention, a predetermined number of jig units are held together by the shared fastening mechanism. This contributes to shortening the time for setting the wafer jig.
【００１７】なお、前記共有締め付け機構は、治具ユニ
ットがめっきに関する処理液に漬けられても、ウェハ縁
部近傍及び裏面は曝されないようにすることが重要であ
る。そこで、ウェハ載置板と上蓋部材の密着性を高める
ために、前記共有締め付け機構は、各々治具ユニットの
共通する貫通口に差込まれるネジ及び締め具を有するこ
とを特徴とする。It is important that the shared tightening mechanism does not expose the vicinity of the wafer edge and the back surface even when the jig unit is immersed in a processing solution relating to plating. Therefore, in order to enhance the adhesion between the wafer mounting plate and the upper lid member, the shared fastening mechanism has a screw and a fastener inserted into a common through hole of the jig unit.
【００１８】また、前記共有締め付け機構は、各々治具
ユニットの共通する貫通口に差込まれるネジ及び締め具
を有し、前記弾性部材は、前記ネジが差込まれるだけの
径を有する筒形状であることを特徴とする。弾性部材の
薄型化は、治具ユニット配列のコンパクト化に寄与す
る。Further, the common fastening mechanism has a screw and a fastener inserted into a common through hole of the jig unit, and the elastic member has a cylindrical shape having a diameter enough to insert the screw. It is characterized by being. Reducing the thickness of the elastic member contributes to making the jig unit arrangement compact.
【００１９】あるいは前記共有締め付け機構は、各々治
具ユニットの共通する貫通口に差込まれるネジ及び締め
具を有すると共に、この締め具が前記ネジの方向での圧
力によって締め付け固定される構造であることを特徴と
する。これにより、治具ユニットの状態変化に追従する
締め付け固定が実現される。Alternatively, the shared fastening mechanism has a screw and a fastener inserted into a common through hole of the jig unit, and the fastener is fastened and fixed by pressure in the direction of the screw. It is characterized by the following. As a result, tightening and fixing that follows the state change of the jig unit is realized.
【００２０】さらに、ウェハ載置板と上蓋部材の密着部
に互いに嵌合う構造が付加されていることを特徴とす
る。これにより、ウェハ載置板と上蓋部材の密着性はい
っそう高まる。また、ウェハ載置板と上蓋部材の位置決
めも兼ねるので、ウェハ治具のセットに関し時間短縮に
寄与する。Further, a feature is provided in which a structure is provided in which the wafer mounting plate and the upper lid member are fitted to each other in a close contact portion. Thereby, the adhesion between the wafer mounting plate and the upper lid member is further enhanced. In addition, since it also serves as positioning of the wafer mounting plate and the upper lid member, it contributes to shortening the time for setting the wafer jig.
【００２１】[0021]
【発明の実施の形態】図１、図２は、それぞれ本発明の
第１実施形態に係るめっき用ウェハ治具の構成を示して
おり、図１は概観平面図、図２は図１中のＦ２−Ｆ２線
に沿う断面図である。図１、図２を参照して以下説明す
る。1 and 2 show the configuration of a wafer jig for plating according to a first embodiment of the present invention. FIG. 1 is a plan view of an outer appearance, and FIG. 2 is a plan view of FIG. It is sectional drawing which follows the F2-F2 line. This will be described below with reference to FIGS.
【００２２】めっき用ウェハ治具１０は、半導体ウェハ
ＷＦと互いに電気的に絶縁関係を保つウェハ載置板１１
とウェハ周縁部近傍に密着する上蓋部材１２とでウェハ
ＷＦに関しその主表面領域を露出させながら狭持するそ
れぞれの治具ユニット１０１〜１０３を有する。The plating wafer jig 10 includes a wafer mounting plate 11 that is electrically insulated from the semiconductor wafer WF.
And jig units 101 to 103 which hold the wafer WF while exposing the main surface area thereof with the upper lid member 12 which is in close contact with the periphery of the wafer.
【００２３】上記ウェハ載置板１１と上蓋部材１２は、
硬質の樹脂板（例えばポリテトラフルオロエチレン（テ
フロン（登録商標））製の板）で構成される。ウェハ載
置板１１と上蓋部材１２の密着部に樹脂系の弾性部材１
３が設けられている。上記治具ユニット１０１〜１０３
は、スペーサーとなる弾性部材１４をそれぞれ介して連
なり、各々の治具ユニットがまとめて狭持されるための
共有締め付け機構１５が構成される。The wafer mounting plate 11 and the upper lid member 12 are
It is made of a hard resin plate (for example, a plate made of polytetrafluoroethylene (Teflon (registered trademark))). The resin-based elastic member 1 is attached to the contact portion between the wafer mounting plate 11 and the
3 are provided. The jig units 101 to 103
Are connected via an elastic member 14 serving as a spacer, and a shared fastening mechanism 15 for holding the respective jig units together is configured.
【００２４】治具ユニット１０１〜１０３のそれぞれに
ついて、ウェハ載置板１１にはウェハＷＦが配置され
る。上蓋部材１２は、弾性部材１３を伴いウェハ周縁部
近傍に沿って密着し、半導体ウェハＷＦの主表面領域を
露出させつつウェハ載置板１１の上方から押し付ける形
態となる。For each of the jig units 101 to 103, a wafer WF is arranged on the wafer mounting plate 11. The upper lid member 12 is brought into close contact with the elastic member 13 along the vicinity of the periphery of the wafer, and is pressed from above the wafer mounting plate 11 while exposing the main surface area of the semiconductor wafer WF.
【００２５】共有締め付け機構１５は、例えば治具ユニ
ット１０１〜１０３の共通する貫通口（ユニット四隅付
近に設けられた開口）にネジ１５１が差し込まれ、締め
具１５２で締め付ける構成である。ここで、スペーサー
となる弾性部材１４は筒形状であり、一緒にネジ１５１
が差込まれる。ネジ１５１及び締め具１５２はいずれも
ポリテトラフルオロエチレン（テフロン（登録商標））
製の部材を用いる。The shared tightening mechanism 15 has a configuration in which, for example, a screw 151 is inserted into a common through-hole (openings provided near the four corners of the jig units) of the jig units 101 to 103 and tightened with a fastener 152. Here, the elastic member 14 serving as a spacer has a cylindrical shape, and together with the screw 151
Is inserted. Both the screw 151 and the fastener 152 are made of polytetrafluoroethylene (Teflon (registered trademark))
A member made of
【００２６】ネジ１５１及び締め具１５２による締め付
け、弾性部材１４の応力によって、治具ユニット１０１
〜１０３におけるウェハＷＦ周縁部近傍への圧力が大き
くなる。これにより、めっきに関する処理液（ジンケー
ト処理液やめっき液等）がウェハＷＦ主表面の露出部以
外に回り込まないようにする。The jig unit 101 is tightened by the screws 151 and the fasteners 152 and the stress of the elastic member 14 is applied.
The pressure in the vicinity of the periphery of the wafer WF in the range from to 103 becomes large. This prevents a processing solution relating to plating (a zincate processing solution, a plating solution, or the like) from flowing around the exposed portion of the main surface of the wafer WF.
【００２７】このように治具ユニット１０１〜１０３か
らなるめっき用ウェハ治具１０は、図示しないが所定数
準備され、各々ウェハが納められてウェハキャリア（バ
スケット）に収容される。そして、ウェハキャリアご
と、図示しないがめっき工程の前処理としてＺｎイオン
の入った処理液に浸漬するジンケート処理（パッド表面
にＺｎを置換）、次に無電解めっき処理工程に伴なう所
定の処理液（めっき液）に浸漬し、無電解めっきバンプ
を形成する。The plating wafer jigs 10 composed of the jig units 101 to 103 are prepared in a predetermined number, not shown, and each wafer is stored and accommodated in a wafer carrier (basket). Then, although not shown, a zincate treatment (replacement of Zn on the pad surface) for immersion in a treatment solution containing Zn ions as a pretreatment of a plating process (not shown) for each wafer carrier, and a predetermined treatment accompanying the electroless plating treatment Immersion in a solution (plating solution) to form electroless plating bumps.
【００２８】上記第１実施形態の構成によれば、めっき
用ウェハ治具１０によって、半導体ウェハＷＦの主表面
側（すなわちバンプ形成面）を損傷させる危険性のある
ウェハ裏面へのレジスト塗布工程をなくすることができ
る。すなわち、めっきに関する処理液に漬けられてもウ
ェハ周縁部近傍及び裏面は曝されない。これによりグラ
ンド効果の影響を防止することができる。According to the structure of the first embodiment, the step of applying a resist to the rear surface of the semiconductor wafer WF, which has a risk of damaging the main surface side (that is, the bump formation surface) of the semiconductor wafer WF, is performed by the plating wafer jig 10. Can be eliminated. That is, even if the wafer is immersed in a processing solution for plating, the vicinity of the wafer peripheral portion and the back surface are not exposed. Thus, the effect of the ground effect can be prevented.
【００２９】しかも、共有締め付け機構１５によって、
複数の治具ユニット（１０１〜１０３）が所定数まとめ
て狭持される。これにより、ウェハ治具のセット、調整
に関し時間短縮に寄与する。なお、共有締め付け機構１
５によってまとめられる複数の治具ユニットは１０１〜
１０３のように３つに限らず、さらに多くしてもよい。
スペーサーとなる弾性部材１４を許容される範囲で薄型
化すれば、治具ユニット配列のコンパクト化が期待でき
る。Moreover, the shared fastening mechanism 15
A plurality of jig units (101 to 103) are held together by a predetermined number. This contributes to shortening the time for setting and adjusting the wafer jig. In addition, the shared fastening mechanism 1
The plurality of jig units grouped by 5 are 101 to 101
The number is not limited to three as in 103 but may be more.
If the thickness of the elastic member 14 serving as a spacer is reduced as much as possible, a compact jig unit arrangement can be expected.
【００３０】図３は、本発明の第２実施形態に係るめっ
き用ウェハ治具の構成を示しており、前記図２に対応し
た断面図である。前記第１実施形態と同様の箇所には同
一の符号を付して説明する。FIG. 3 shows the configuration of a plating wafer jig according to a second embodiment of the present invention, and is a sectional view corresponding to FIG. The same parts as those in the first embodiment will be described with the same reference numerals.
【００３１】めっき用ウェハ治具２０は、前記第１実施
形態のめっき用ウェハ治具１０に比べて共有締め付け機
構が改良されている。共有締め付け機構２５では、締め
具１５２がネジ１５１の方向で圧力がかけられるように
バネ２５１が付加されている。これにより、共有締め付
け機構２５は常にバネ２５１による圧力がかけられるこ
とになる。その他の構成は前記第１実施形態と同様であ
る。The plating wafer jig 20 has an improved shared tightening mechanism as compared with the plating wafer jig 10 of the first embodiment. In the shared tightening mechanism 25, a spring 251 is added so that the fastener 152 applies pressure in the direction of the screw 151. As a result, the shared fastening mechanism 25 is always pressed by the spring 251. Other configurations are the same as in the first embodiment.
【００３２】上記第２実施形態の構成によっても、前記
第１実施形態と同様の効果が得られる。めっき用ウェハ
治具２０によって、半導体ウェハＷＦの主表面側（すな
わちバンプ形成面）を損傷させる危険性のあるウェハ裏
面へのレジスト塗布工程をなくすることができる。すな
わち、めっきに関する処理液に漬けられてもウェハ周縁
部近傍及び裏面は曝されない。これによりグランド効果
の影響を防止することができる。According to the configuration of the second embodiment, the same effects as in the first embodiment can be obtained. The plating wafer jig 20 can eliminate the step of applying a resist to the back surface of the semiconductor wafer WF, which may damage the main surface side (that is, the bump formation surface) of the semiconductor wafer WF. That is, even if the wafer is immersed in a processing solution relating to plating, the vicinity of the wafer peripheral portion and the back surface are not exposed. Thus, the effect of the ground effect can be prevented.
【００３３】また、共有締め付け機構２５は、例えば温
度変化による治具ユニット１０１〜１０３の締め付け状
態の変化に、バネ２５１による圧力が追従して働く。こ
れにより、締め付け状態の安定化が図れる利点がある。Further, in the shared tightening mechanism 25, the pressure of the spring 251 works in accordance with a change in the tightening state of the jig units 101 to 103 due to a temperature change, for example. Thereby, there is an advantage that the fastening state can be stabilized.
【００３４】共有締め付け機構２５によって、複数の治
具ユニット（１０１〜１０３）が所定数まとめて狭持さ
れる。これにより、ウェハ治具のセット、調整に関し時
間短縮に寄与する。なお、共有締め付け機構２５によっ
てまとめられる複数の治具ユニットは１０１〜１０３の
ように３つに限らず、さらに多くしてもよい。スペーサ
ーとなる弾性部材１４を許容される範囲で薄型化すれ
ば、治具ユニット配列のコンパクト化が期待できる。A plurality of jig units (101 to 103) are held together by the common fastening mechanism 25 in a predetermined number. This contributes to shortening the time for setting and adjusting the wafer jig. The number of jig units combined by the shared fastening mechanism 25 is not limited to three as in 101 to 103, and may be more. If the thickness of the elastic member 14 serving as a spacer is reduced as much as possible, a compact jig unit arrangement can be expected.
【００３５】図４は、本発明の第３実施形態に係るめっ
き用ウェハ治具の構成を示しており、前記図３に対応し
た断面図である。前記第１実施形態と同様の箇所には同
一の符号を付して説明する。FIG. 4 shows a configuration of a plating wafer jig according to a third embodiment of the present invention, and is a sectional view corresponding to FIG. The same parts as those in the first embodiment will be described with the same reference numerals.
【００３６】めっき用ウェハ治具３０は、前記第２実施
形態のめっき用ウェハ治具２０に比べて、新たにウェハ
載置板１１と上蓋部材１２の密着部において、弾性部材
１３と共に互いに嵌合う構造（嵌合部３１）が付加され
ている。ウェハ載置板２２と上蓋部材２３の密着性はい
っそう増す。これにより、ウェハ載置板２２と上蓋部材
２３の間からのめっきに関する処理液の侵入をさらに防
ぐ。The plating wafer jig 30 is newly fitted together with the elastic member 13 at the contact portion between the wafer mounting plate 11 and the upper lid member 12 as compared with the plating wafer jig 20 of the second embodiment. A structure (fitting portion 31) is added. The adhesion between the wafer mounting plate 22 and the upper lid member 23 is further increased. This further prevents the processing solution relating to plating from entering between the wafer mounting plate 22 and the upper lid member 23.
【００３７】また、嵌合部３１の構成はウェハ載置板１
１と上蓋部材１２の位置決めも兼ねているので、ウェハ
治具３０のセットに関し時間短縮に寄与する。なお、嵌
合部３１の形態はこの他様々考えられる。The structure of the fitting portion 31 is the same as that of the wafer mounting plate 1.
Since the positioning of the upper and lower lid members 12 is also performed, the time required for setting the wafer jig 30 is reduced. It should be noted that various other forms of the fitting portion 31 are also conceivable.
【００３８】上記第３実施形態の構成によっても、前記
第２実施形態と同様の効果が得られる。すなわち、めっ
きに関する処理液に漬けられてもウェハ周縁部近傍及び
裏面は曝されずに済み、これによりグランド効果の影響
を防止することができる。According to the configuration of the third embodiment, the same effects as those of the second embodiment can be obtained. That is, even if the wafer is immersed in a processing solution relating to plating, the vicinity of the peripheral portion of the wafer and the back surface do not need to be exposed, thereby preventing the influence of the ground effect.
【００３９】また、バネ２５１による締め付け状態の安
定化が図れると共に、ウェハ治具のセット、調整に関し
時間短縮に寄与する。なお、複数の治具ユニットは１０
１〜１０３のように３つに限らず、さらに多くしてもよ
い。スペーサーとなる弾性部材１４を許容される範囲で
薄型化すれば、治具ユニット配列のコンパクト化が期待
できる。Further, the tightening state of the spring 251 can be stabilized, and the setting and adjustment of the wafer jig can be reduced. The plurality of jig units are 10
The number is not limited to three as in 1 to 103, and may be more. If the thickness of the elastic member 14 serving as a spacer is reduced as much as possible, a compact jig unit arrangement can be expected.
【００４０】なお、上記第２、第３各実施形態の共有締
め付け機構２５におけるバネ２５１に代替するものは、
様々考えられる。図示しないが、例えばガス圧力の供給
が考えられる。めっきに関する処理液がウェハＷＦの露
出部以外に回り込まないようにそれぞれの治具ユニット
が狭持できればよく、他の締め付け構成も十分考えられ
る。The alternative to the spring 251 in the common tightening mechanism 25 of the second and third embodiments is as follows.
There are various possibilities. Although not shown, for example, supply of gas pressure can be considered. It is only necessary that each jig unit can be held so that the processing solution relating to plating does not spill around to the portion other than the exposed portion of the wafer WF, and other fastening configurations are sufficiently conceivable.
【００４１】[0041]
【発明の効果】以上説明したように本発明によれば、共
有締め付け機構によって、複数の治具ユニットが所定数
まとめて狭持される。これにより、ウェハ治具のセット
に関し時間短縮に寄与する。ウェハ縁部近傍及び裏面は
めっきに関する処理液に曝されずグランド効果の悪影響
は及ばない。この結果、ウェハ治具に対する調整をある
程度の数量一括にし、生産効率の向上する高信頼性の無
電解めっきを可能とするめっき用ウェハ治具を提供する
ことができる。As described above, according to the present invention, a predetermined number of jig units are held together by the shared fastening mechanism. This contributes to shortening the time for setting the wafer jig. The vicinity and the back surface of the wafer edge are not exposed to the processing solution relating to plating, and the adverse effect of the ground effect is not exerted. As a result, it is possible to provide a plating jig for plating that enables high-reliability electroless plating to improve the production efficiency by making adjustments to the wafer jig in a certain number of batches.
【図１】本発明の第１実施形態に係るめっき用ウェハ治
具の構成を示す概観平面図である。FIG. 1 is a schematic plan view showing a configuration of a plating wafer jig according to a first embodiment of the present invention.
【図２】図１中のＦ２−Ｆ２線に沿う断面図である。FIG. 2 is a sectional view taken along line F2-F2 in FIG.
【図３】本発明の第２実施形態に係るめっき用ウェハ治
具の構成を示しており、前記図２に対応した断面図であ
る。FIG. 3 shows a configuration of a plating wafer jig according to a second embodiment of the present invention, and is a cross-sectional view corresponding to FIG. 2;
【図４】本発明の第３実施形態に係るめっき用ウェハ治
具の構成を示しており、前記図３に対応した断面図であ
る。FIG. 4 shows a configuration of a plating wafer jig according to a third embodiment of the present invention, and is a cross-sectional view corresponding to FIG.
１０，２０，３０…めっき用ウェハ治具 １０１〜１０３…治具ユニット １１…ウェハ載置板 １２…上蓋部材 １３，１４…弾性部材 １５，２５…共有締め付け機構 １５１…ネジ １５２…締め具 ２５１…バネ ３１…嵌合部 ＷＦ…半導体ウェハ 10, 20, 30: Plating wafer jig 101-103: Jig unit 11: Wafer mounting plate 12, Top cover member 13, 14, Elastic member 15, 25: Shared fastening mechanism 151: Screw 152: Fastener 251 Spring 31: Fitting part WF: Semiconductor wafer
Claims (5)
係にあるウェハ載置板とウェハ周縁部近傍に密着する上
蓋部材とで前記ウェハに関しその主表面領域を露出させ
ながら狭持する治具ユニットと、 前記治具ユニットが所定数だけ間に弾性部材を介して連
なり、各々の治具ユニットが所定数まとめて狭持される
ための共有締め付け機構と、を具備したことを特徴とす
るめっき用ウェハ治具。A jig unit for holding a wafer mounting plate electrically insulated from a semiconductor wafer and an upper lid member in close contact with a periphery of the wafer while exposing a main surface area of the wafer; A jig unit connected by a predetermined number via an elastic member between the jig units, and a common fastening mechanism for holding a predetermined number of the jig units together. jig.
ットの共通する貫通口に差込まれるネジ及び締め具を有
することを特徴とする請求項１記載のめっき用ウェハ治
具。2. The plating wafer jig according to claim 1, wherein each of the shared fastening mechanisms has a screw and a fastener inserted into a common through hole of the jig unit.
ットの共通する貫通口に差込まれるネジ及び締め具を有
し、前記弾性部材は、前記ネジが差込まれるだけの径を
有する筒形状であることを特徴とする請求項１記載のめ
っき用ウェハ治具。3. The common tightening mechanism has a screw and a fastener inserted into a common through hole of the jig unit, and the elastic member has a cylindrical shape having a diameter enough to insert the screw. 2. The plating jig according to claim 1, wherein:
ットの共通する貫通口に差込まれるネジ及び締め具を有
すると共に、この締め具が前記ネジの方向で圧力がかけ
られることによって固定される構造であることを特徴と
する請求項１記載のめっき用ウェハ治具。4. The shared tightening mechanism has a screw and a fastener inserted into a common through hole of the jig unit, and the fastener is fixed by applying pressure in the direction of the screw. The plating jig according to claim 1, wherein the jig has a structure.
互いに嵌合う構造が付加されていることを特徴とする請
求項１〜４いずれか一つに記載のめっき用ウェハ治具。5. The plating wafer jig according to claim 1, further comprising a structure that fits into a close contact portion between the wafer mounting plate and the upper lid member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001148728A JP2002339078A (en) | 2001-05-18 | 2001-05-18 | Wafer jig for plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001148728A JP2002339078A (en) | 2001-05-18 | 2001-05-18 | Wafer jig for plating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002339078A true JP2002339078A (en) | 2002-11-27 |
Family
ID=18993986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001148728A Withdrawn JP2002339078A (en) | 2001-05-18 | 2001-05-18 | Wafer jig for plating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002339078A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008056163A1 (en) | 2007-11-12 | 2009-05-14 | Yamamoto-Ms Co, Ltd. | Plattierunghaltevorrichtung |
| KR20150123779A (en) | 2014-02-25 | 2015-11-04 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Method for manufacturing power device |
-
2001
- 2001-05-18 JP JP2001148728A patent/JP2002339078A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008056163A1 (en) | 2007-11-12 | 2009-05-14 | Yamamoto-Ms Co, Ltd. | Plattierunghaltevorrichtung |
| US8720368B2 (en) | 2007-11-12 | 2014-05-13 | Yamamoto-Ms Co., Ltd. | Plating jig |
| KR20150123779A (en) | 2014-02-25 | 2015-11-04 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Method for manufacturing power device |
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