JP2002338283A - Glass substrate manufacturing method and glass substrate manufactured by the manufacturing method - Google Patents
Glass substrate manufacturing method and glass substrate manufactured by the manufacturing methodInfo
- Publication number
- JP2002338283A JP2002338283A JP2001151397A JP2001151397A JP2002338283A JP 2002338283 A JP2002338283 A JP 2002338283A JP 2001151397 A JP2001151397 A JP 2001151397A JP 2001151397 A JP2001151397 A JP 2001151397A JP 2002338283 A JP2002338283 A JP 2002338283A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- flatness
- manufacturing
- polishing
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 360
- 239000000758 substrate Substances 0.000 title claims abstract description 346
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 238000005498 polishing Methods 0.000 claims abstract description 123
- 238000000137 annealing Methods 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000011282 treatment Methods 0.000 claims description 69
- 238000010438 heat treatment Methods 0.000 claims description 48
- 239000000919 ceramic Substances 0.000 claims description 36
- 238000001816 cooling Methods 0.000 claims description 21
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000007517 polishing process Methods 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 36
- 238000005259 measurement Methods 0.000 description 28
- 238000002474 experimental method Methods 0.000 description 21
- 150000003839 salts Chemical class 0.000 description 14
- 239000007788 liquid Substances 0.000 description 12
- 238000003426 chemical strengthening reaction Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- 239000002699 waste material Substances 0.000 description 9
- 239000006121 base glass Substances 0.000 description 7
- 229910000420 cerium oxide Inorganic materials 0.000 description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000005354 aluminosilicate glass Substances 0.000 description 3
- 239000003599 detergent Substances 0.000 description 3
- 238000005342 ion exchange Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910001414 potassium ion Inorganic materials 0.000 description 2
- 235000010333 potassium nitrate Nutrition 0.000 description 2
- 239000004323 potassium nitrate Substances 0.000 description 2
- ZLMJMSJWJFRBEC-OUBTZVSYSA-N potassium-40 Chemical compound [40K] ZLMJMSJWJFRBEC-OUBTZVSYSA-N 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 235000010344 sodium nitrate Nutrition 0.000 description 2
- 239000004317 sodium nitrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003280 down draw process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Surface Treatment Of Glass (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
(57)【要約】
【課題】 ガラス基板を短時間で作製し、生産性の向上
を図ることができるガラス基板の製造方法及び該製造方
法により製造されたガラス基板を提供する。
【解決手段】 ガラス基板の主表面の研磨工程前に、該
ガラス基板にアニール処理を実施して、ガラス基板の研
磨前に予めガラス基板に生じている変形を矯正する。
(57) Abstract: A glass substrate manufacturing method capable of manufacturing a glass substrate in a short time and improving productivity, and a glass substrate manufactured by the manufacturing method are provided. SOLUTION: Before a polishing process of a main surface of a glass substrate, an annealing process is performed on the glass substrate to correct a deformation that has been generated in the glass substrate before the polishing of the glass substrate.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ハードディスク等
に使用される磁気記憶媒体用のガラス基板の製造方法及
び該製造方法により製造されたガラス基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a glass substrate for a magnetic storage medium used for a hard disk or the like and a glass substrate manufactured by the method.
【０００２】[0002]
【従来の技術】従来より、大記憶容量化を実現するため
に、反りが小さく、即ちフラットネス（平坦度）の値が
小さく、磁気ヘッドが万一接触しても傷のつきにくいガ
ラス基板を磁気記憶媒体用基板として使用することが知
られている。2. Description of the Related Art Conventionally, in order to realize a large storage capacity, a glass substrate which has a small warpage, that is, a small flatness value, and which is hardly scratched even if a magnetic head comes into contact with it, has been used. It is known to use as a substrate for magnetic storage media.
【０００３】このガラス基板は、フラットネスの値を小
さくするために、図２に示すガラス基板の製造手順に基
づいて製造される。[0003] This glass substrate is manufactured based on the manufacturing procedure of the glass substrate shown in FIG. 2 in order to reduce the value of the flatness.
【０００４】即ち、まず、厚み１．１ｍｍのアルミノシ
リケートガラスを母材とするガラス素板をガラスカッタ
ー又はコアドリルで、所定の大きさのディスク状に切り
出して、比較的粗いダイヤモンド砥石で研削加工するこ
とにより、ディスク状のガラス基板を作製する（円盤加
工工程ＰＲ１）。That is, first, a glass base material having a 1.1 mm-thick aluminosilicate glass as a base material is cut into a disk having a predetermined size by a glass cutter or a core drill, and ground by a relatively coarse diamond grindstone. Thus, a disk-shaped glass substrate is manufactured (disk processing step PR1).
【０００５】次に、円筒状の砥石を用いて上記工程ＰＲ
１で作製されたガラス基板の外周端面及び内周端面に所
定の面取り加工を行い（内外周端面面取り工程ＰＲ
２）、平均粒径３μｍの遊離酸化セリウム砥粒を含む研
磨剤を用いて内外周端面の表面粗さをＲａで約０．１μ
ｍ、Ｒｍａｘで約１．１μｍとなるようにブラシ研磨を
行う（外周端面研磨工程ＰＲ３及び内周端面研磨工程Ｐ
Ｒ４）。Next, the above-mentioned process PR is performed using a cylindrical grindstone.
A predetermined chamfering process is performed on the outer peripheral end surface and the inner peripheral end surface of the glass substrate manufactured in Step 1 (inner / outer peripheral end chamfering step PR
2) Using an abrasive containing free cerium oxide abrasive grains having an average particle diameter of 3 μm, the surface roughness of the inner and outer peripheral end faces is about 0.1 μm in Ra.
Brush polishing is performed so that m and Rmax are about 1.1 μm (the outer peripheral end surface polishing step PR3 and the inner peripheral end surface polishing step P
R4).
【０００６】その後、内外周の研磨されたガラス基板の
厚み揃えや平坦度及びうねりの改善のために、粒度＃１
０００（平均粒径９〜１０μｍ）のアルミナ砥粒研磨剤
を用いてガラス基板の主表面両面の粗研磨を行い（主表
面粗研磨工程ＰＲ５）、この工程ＰＲ５で残留した傷や
歪みを除去するためにガラス基板の主表面を平均粒径
１．２μｍの酸化セリウム研磨剤を用いてポリシャ（硬
質布）により研磨する（主表面第１精密研磨工程ＰＲ
６）。Thereafter, in order to make the thickness of the polished inner and outer peripheral glass substrates uniform and to improve the flatness and undulation, a grain size of # 1 is obtained.
Rough polishing of both surfaces of the main surface of the glass substrate is performed by using an abrasive abrasive of 000 (average particle size of 9 to 10 μm) (main surface rough polishing step PR5), and the scratches and distortions remaining in this step PR5 are removed. For this purpose, the main surface of the glass substrate is polished with a polisher (hard cloth) using a cerium oxide abrasive having an average particle size of 1.2 μm (the main surface first precision polishing step PR).
6).
【０００７】次いで、所望の平滑面にするために上記工
程ＰＲ６で研磨されたガラス基板の主表面を、更に、平
均粒径０．８μｍの酸化セリウム研磨剤を用いてポリシ
ャ（軟質布）により研磨し（主表面第２精密研磨工程Ｐ
Ｒ７）、この工程ＰＲ７で研磨されたガラス基板を硝酸
カリウム６０質量％及び硝酸ナトリウム４０質量％から
なる溶融塩中に４８０度で２時間漬け、ガラス基板中に
カリウムイオン及びナトリウムイオンを含有させてガラ
ス基板を強化して（化学強化工程ＰＲ８）、ガラス基板
の製造を終了する。Next, the main surface of the glass substrate polished in step PR6 to obtain a desired smooth surface is further polished with a polisher (soft cloth) using a cerium oxide abrasive having an average particle diameter of 0.8 μm. (Main surface second precision polishing process P
R7), the glass substrate polished in this step PR7 is immersed in a molten salt composed of 60% by mass of potassium nitrate and 40% by mass of sodium nitrate at 480 ° C. for 2 hours to contain potassium ions and sodium ions in the glass substrate, The substrate is strengthened (chemical strengthening step PR8), and the production of the glass substrate is completed.
【０００８】以上のガラス基板の製造手順により、フラ
ットネスの値の小さいガラス基板を作製している。A glass substrate having a small flatness value is manufactured by the above-described glass substrate manufacturing procedure.
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、上記主
表面粗研磨工程ＰＲ５では、比較的大きな平均粒径を有
するアルミナ砥粒研磨剤を用いてガラス基板の主表面両
面の粗研磨を行うため、主表面には、図３に示すような
深い傷が生じるという問題がある。ここで、生じる傷
は、主表面第１精密研磨工程ＰＲ６及び主表面第２精密
研磨工程ＰＲ７で実行される研磨により除去されるが、
これらの工程で使用される酸化セリウム研磨剤は平均粒
径が極めて小さいため、研磨速度が非常に遅く、傷の除
去に要する時間が長時間になるという問題がある。この
ことは、ガラス基板の生産性が低くなることの原因の一
つである。However, in the above-mentioned main surface rough polishing step PR5, since both surfaces of the main surface of the glass substrate are coarsely polished using an alumina abrasive abrasive having a relatively large average particle size, On the surface, there is a problem that deep scratches occur as shown in FIG. Here, the generated scratch is removed by the polishing performed in the main surface first precision polishing step PR6 and the main surface second precision polishing step PR7.
Since the cerium oxide abrasive used in these steps has an extremely small average particle size, there is a problem that the polishing rate is extremely low and the time required for removing the scratches is long. This is one of the causes of the low productivity of the glass substrate.
【００１０】本発明は、上述の問題点に鑑みてなされた
ものであり、ガラス基板を短時間で作製し、生産性の向
上を図ることができるガラス基板の製造方法及び該製造
方法により製造されたガラス基板を提供することを目的
とする。The present invention has been made in view of the above-mentioned problems, and a glass substrate manufacturing method capable of manufacturing a glass substrate in a short time and improving productivity, and a glass substrate manufactured by the manufacturing method. It is an object of the present invention to provide a glass substrate.
【００１１】[0011]
【課題を解決するための手段】上述の目的を達成するた
めに、請求項１のガラス基板の製造方法は、ガラス基板
の主表面の研磨工程前に、前記ガラス基板にアニール処
理を実施することを特徴とする。According to a first aspect of the present invention, there is provided a method of manufacturing a glass substrate, wherein the glass substrate is annealed before the main surface of the glass substrate is polished. It is characterized by.
【００１２】請求項１記載のガラス基板の製造方法によ
れば、ガラス基板の主表面の研磨工程前に、該ガラス基
板にアニール処理を実施するので、ガラス基板の研磨前
に予めガラス基板に生じている変形を矯正することがで
き、この結果、精密研磨代を少なくすることができる。
これにより、精密研磨に長時間を費やす必要がなくな
り、ガラス基板を短時間で所望のフラットネスにするこ
とができる。よって、ガラス基板を短時間で作製し、生
産性の向上を図ることができる。According to the first aspect of the present invention, the glass substrate is annealed before the main surface of the glass substrate is polished, so that the glass substrate is formed before the glass substrate is polished. Deformation can be corrected, and as a result, the precision polishing allowance can be reduced.
Accordingly, it is not necessary to spend a long time for precision polishing, and the desired flatness of the glass substrate can be achieved in a short time. Therefore, a glass substrate can be manufactured in a short time and productivity can be improved.
【００１３】請求項２のガラス基板の製造方法は、請求
項１記載のガラス基板の製造方法において、前記ガラス
基板の主表面の研磨工程では、精密研磨のみ実施するこ
とを特徴とする。According to a second aspect of the present invention, in the method of manufacturing a glass substrate according to the first aspect, in the polishing step of the main surface of the glass substrate, only precision polishing is performed.
【００１４】請求項２記載のガラス基板の製造方法によ
れば、ガラス基板の主表面の研磨工程では、精密研磨の
みを実施する。即ち、粗研磨を実施しないので、ガラス
基板の主表面に深い傷が生じることがなくなり、精密研
磨代を少なくすることができ、この結果、精密研磨に長
時間を費やす必要がなくなり、ガラス基板をさらに短時
間で所望のフラットネスにすることができる。また、粗
研磨を実施しないことで、粗研磨に使用される研磨剤の
廃液処理や粗研磨後の洗浄による洗浄液の廃液処理を必
要としないので、自然環境への負荷を減らすことができ
る。また、精密研磨代を少なくすることができ、廃液処
理を必要としないので、ガラス基板の作製にかかるコス
トを抑えることができる。According to the method of manufacturing a glass substrate of the present invention, in the polishing step of the main surface of the glass substrate, only precision polishing is performed. That is, since rough polishing is not performed, deep scratches are not generated on the main surface of the glass substrate, and the precision polishing allowance can be reduced. As a result, it is not necessary to spend a long time on precision polishing, and Further, the desired flatness can be obtained in a shorter time. In addition, since the rough polishing is not performed, it is not necessary to perform a waste liquid treatment of an abrasive used for the rough polishing or a waste liquid treatment of a cleaning liquid by washing after the rough polishing, so that a load on a natural environment can be reduced. In addition, the cost for precision polishing can be reduced and waste liquid treatment is not required, so that the cost for manufacturing a glass substrate can be reduced.
【００１５】請求項３のガラス基板の製造方法は、請求
項１又は２記載のガラス基板の製造方法において、前記
アニール処理における加熱保持温度を前記ガラス基板の
歪点の温度より５０℃低い温度より高く、軟化点の温度
より２０℃高い温度より低い温度とすることを特徴とす
る。According to a third aspect of the present invention, in the method of manufacturing a glass substrate according to the first or second aspect, the heating and holding temperature in the annealing treatment is set to a temperature lower by 50 ° C. than the strain point temperature of the glass substrate. It is characterized by a temperature that is high and lower than a temperature that is 20 ° C. higher than the temperature of the softening point.
【００１６】請求項３のガラス基板の製造方法によれ
ば、アニール処理における加熱保持温度をガラス基板の
歪点の温度より５０℃低い温度より高く、軟化点の温度
より２０℃高い温度より低い温度とするので、良好な値
のフラットネスを得ることができる、即ち、ガラス基板
の変形を効果的に矯正することができる。According to the third aspect of the present invention, the heating and holding temperature in the annealing process is higher than the temperature of the glass substrate at 50 ° C. lower than the strain point temperature and lower than the temperature of 20 ° C. higher than the softening point temperature. Therefore, a good value of flatness can be obtained, that is, the deformation of the glass substrate can be effectively corrected.
【００１７】請求項４のガラス基板の製造方法は、請求
項１乃至３のいずれか１項に記載のガラス基板の製造方
法において、前記アニール処理における加熱保持温度を
前記ガラス基板の徐冷点の温度より高く、軟化点の温度
より２０℃高い温度より低い温度とすることを特徴とす
る。According to a fourth aspect of the present invention, there is provided a method of manufacturing a glass substrate according to any one of the first to third aspects, wherein the heating and holding temperature in the annealing treatment is set to a value of the annealing point of the glass substrate. The temperature is higher than the temperature and lower than the temperature higher by 20 ° C. than the temperature of the softening point.
【００１８】請求項４記載のガラス基板の製造方法によ
れば、アニール処理における加熱保持温度を前記ガラス
基板の徐冷点の温度より高く、軟化点の温度より２０℃
高い温度より低い温度とするので、短時間でガラス基板
の変形を効果的に矯正でき、さらに生産性の向上を図る
ことができる。According to the method of manufacturing a glass substrate of the present invention, the heating and holding temperature in the annealing treatment is higher than the annealing point temperature of the glass substrate and 20 ° C. from the softening point temperature.
Since the temperature is lower than the high temperature, the deformation of the glass substrate can be effectively corrected in a short time, and the productivity can be further improved.
【００１９】請求項５のガラス基板の製造方法は、請求
項１乃至４のいずれか１項に記載のガラス基板の製造方
法において、前記アニール処理における加熱保持時間を
０．５〜１０時間とすることを特徴とする。According to a fifth aspect of the present invention, in the method of manufacturing a glass substrate according to any one of the first to fourth aspects, the heating and holding time in the annealing treatment is set to 0.5 to 10 hours. It is characterized by the following.
【００２０】請求項５記載のガラス基板の製造方法によ
れば、アニール処理における加熱保持時間を０．５〜１
０時間とするので、良好な値のフラットネスを得ること
ができる、即ち、ガラス基板の変形を効果的に矯正する
ことができる。また、より好ましくは、加熱保持時間を
０．５〜４時間の範囲に設定するとよい。短時間でガラ
ス基板の変形を効果的に矯正でき、生産性の向上を図る
ことができるからである。According to the method of manufacturing a glass substrate of the present invention, the heating and holding time in the annealing treatment is set to 0.5 to 1 hour.
Since the time is set to 0 hours, a good value of flatness can be obtained, that is, the deformation of the glass substrate can be effectively corrected. Also, more preferably, the heating holding time is set in the range of 0.5 to 4 hours. This is because the deformation of the glass substrate can be effectively corrected in a short time, and the productivity can be improved.
【００２１】請求項６のガラス基板の製造方法は、請求
項１乃至５のいずれか１項に記載のガラス基板の製造方
法において、前記アニール処理は、前記ガラス基板とセ
ラミック板を交互に積層した状態で加熱することを特徴
とする。According to a sixth aspect of the present invention, in the method of manufacturing a glass substrate according to any one of the first to fifth aspects, in the annealing treatment, the glass substrate and the ceramic plate are alternately laminated. It is characterized by heating in a state.
【００２２】請求項６記載のガラス基板の製造方法によ
れば、アニール処理は、ガラス基板とセラミック板を交
互に積層した状態で加熱するので、ガラス基板のフラッ
トネスをセラミックス板のフラットネスに沿わすことが
できる。According to the method of manufacturing a glass substrate of the present invention, since the annealing treatment is performed while the glass substrate and the ceramic plate are alternately laminated, the flatness of the glass substrate conforms to the flatness of the ceramic plate. Can be
【００２３】請求項７のガラス基板の製造方法は、請求
項６記載のガラス基板の製造方法において、前記セラミ
ック板は、ＳｉＯ2及びＡｌ2Ｏ3のうち少なくとも一方
が主成分であることを特徴とする。According to a seventh aspect of the present invention, there is provided a method of manufacturing a glass substrate according to the sixth aspect, wherein the ceramic plate contains at least one of SiO 2 and Al 2 O 3 as a main component. And
【００２４】請求項７記載のガラス基板の製造方法によ
れば、セラミック板は、ＳｉＯ2及びＡｌ2Ｏ3のうち少
なくとも一方が主成分であるので、セラミック板が加熱
中に変形して、ガラス基板のフラットネスが矯正できな
くなることを防止することができる。According to the glass substrate manufacturing method of the present invention, since the ceramic plate contains at least one of SiO 2 and Al 2 O 3 as a main component, the ceramic plate is deformed during heating, and It is possible to prevent the flatness of the substrate from being corrected.
【００２５】請求項８のガラス基板の製造方法は、請求
項６又は７記載のガラス基板の製造方法において、前記
セラミック板のフラットネスが３．０μｍ以下であるこ
とを特徴とする。According to an eighth aspect of the present invention, in the method of the sixth or seventh aspect, the flatness of the ceramic plate is 3.0 μm or less.
【００２６】請求項８記載のガラス基板の製造方法によ
れば、セラミック板の主表面のフラットネスが３．０μ
ｍ以下であるので、良好な値のフラットネスを得ること
ができる、即ち、ガラス基板の変形を効果的に矯正する
ことができる。According to the glass substrate manufacturing method of the present invention, the flatness of the main surface of the ceramic plate is 3.0 μm.
m or less, a good value of flatness can be obtained, that is, deformation of the glass substrate can be effectively corrected.
【００２７】請求項９のガラス基板の製造方法は、請求
項１乃至８のいずれか１項に記載のガラス基板の製造方
法において、前記アニール処理において、前記ガラス基
板の主表面にかける加圧力が５〜５００ｇ／ｃｍ2であ
ることを特徴とする。According to a ninth aspect of the present invention, in the method of manufacturing a glass substrate according to any one of the first to eighth aspects, the pressure applied to the main surface of the glass substrate in the annealing treatment is reduced. It is characterized by a weight of 5 to 500 g / cm 2 .
【００２８】請求項９記載のガラス基板の製造方法によ
れば、アニール処理において、ガラス基板の主表面にか
ける加圧力が５〜５００ｇ／ｃｍ2であるので、良好な
値のフラットネスを得ることができる、即ち、ガラス基
板の変形を効果的に矯正することができる。According to the glass substrate manufacturing method of the present invention, in the annealing treatment, the pressure applied to the main surface of the glass substrate is 5 to 500 g / cm 2 , so that a good value of flatness is obtained. That is, the deformation of the glass substrate can be effectively corrected.
【００２９】請求項１０のガラス基板の製造方法は、請
求項１乃至９のいずれか１項に記載のガラス基板の製造
方法において、前記アニール処理における前記ガラス基
板の冷却速度が１０〜１００℃／Ｈｒであることを特徴
とする。[0029] According to a tenth aspect of the present invention, in the method of manufacturing a glass substrate according to any one of the first to ninth aspects, the cooling rate of the glass substrate in the annealing treatment is 10 to 100 ° C. Hr.
【００３０】請求項１０記載のガラス基板の製造方法に
よれば、アニール処理におけるガラス基板の冷却速度が
１０〜１００℃／Ｈｒであるので、良好な値のフラット
ネスを取り、かつ短時間でガラス基板を作製することが
できる。この結果、ガラス基板の生産性の向上を図るこ
とができる。According to the glass substrate manufacturing method of the present invention, since the cooling rate of the glass substrate in the annealing treatment is 10 to 100 ° C./Hr, a good value of flatness can be obtained and the glass can be formed in a short time. A substrate can be made. As a result, the productivity of the glass substrate can be improved.
【００３１】請求項１１のガラス基板の製造方法は、請
求項１乃至１０のいずれか１項に記載のガラス基板の製
造方法において、前記ガラス基板の主表面の研磨工程で
は、前記ガラス基板の研磨量を片面当たり４０μｍ以下
とすることを特徴とする。According to an eleventh aspect of the present invention, in the method of manufacturing a glass substrate according to any one of the first to tenth aspects, in the polishing of the main surface of the glass substrate, the polishing of the glass substrate is performed. The amount is set to 40 μm or less per one side.
【００３２】請求項１２のガラス基板は、請求項１乃至
１１のいずれか１項に記載されたガラス基板の製造方法
で製造されたことを特徴とする。According to a twelfth aspect of the present invention, a glass substrate is manufactured by the method of manufacturing a glass substrate according to any one of the first to eleventh aspects.
【００３３】請求項１２記載のガラス基板によれば、請
求項１乃至１１のいずれか１項に記載されたガラス基板
の製造方法で製造されるので、短時間で作製することが
でき、生産性の向上を図ることができる。According to the glass substrate according to the twelfth aspect, since the glass substrate is manufactured by the method for manufacturing a glass substrate according to any one of the first to eleventh aspects, the glass substrate can be manufactured in a short time and the productivity can be improved. Can be improved.
【００３４】[0034]
【発明の実施の形態】本発明者は、上記目的を達成すべ
く鋭意検討を行った結果、ガラス基板の主表面の研磨工
程前に、該ガラス基板にアニール処理を実施するとき、
ガラス基板の研磨前に予めガラス基板に生じている変形
を矯正することができ、精密研磨代を少なくすることが
でき、これにより、精密研磨に長時間を費やす必要がな
くなり、ガラス基板を短時間で所望のフラットネスにす
ることができるので、ガラス基板を短時間で作製し、生
産性の向上を図ることができることを見出した。BEST MODE FOR CARRYING OUT THE INVENTION As a result of diligent studies to achieve the above object, the present inventor has found that when an annealing process is performed on a glass substrate before the main surface polishing process of the glass substrate,
It is possible to correct the deformation that has occurred in the glass substrate before polishing the glass substrate in advance, and reduce the precision polishing allowance. It has been found that the desired flatness can be obtained by using the method described above, so that a glass substrate can be manufactured in a short time and productivity can be improved.
【００３５】本発明は、上記研究の結果に基づいてなさ
れたものである。The present invention has been made based on the results of the above research.
【００３６】以下、本発明の実施の形態に係るガラス基
板の製造方法を図面を参照しながら説明する。Hereinafter, a method for manufacturing a glass substrate according to an embodiment of the present invention will be described with reference to the drawings.
【００３７】図１は、本発明の実施の形態に係るガラス
基板の製造手順を示す工程図である。FIG. 1 is a process chart showing a procedure for manufacturing a glass substrate according to an embodiment of the present invention.
【００３８】［円盤加工工程Ｐ１］まず、厚み１．１ｍ
ｍのアルミノシリケートガラスを母材とするガラス素板
をガラスカッター又はコアドリルで、外径８４ｍｍφ
（又は外径６５ｍｍφ）より少し大きく、且つ内径２５
ｍｍφ（又は内径２０ｍｍφ）より少し小さくディスク
状に切り出して比較的粗いダイヤモンド砥石で研削加工
することにより、ディスク状のガラス基板を作製する。[Disc processing step P1] First, a thickness of 1.1 m
m aluminosilicate glass as a base material, using a glass cutter or core drill, an outer diameter of 84 mmφ
(Or outside diameter 65mmφ) and inside diameter 25
A disk-shaped glass substrate is manufactured by cutting a disk slightly smaller than mmφ (or an inner diameter of 20 mmφ) and grinding it with a relatively rough diamond grindstone.
【００３９】アルミノシリケートガラスとしては、質量
％表示で、ＳｉＯ2を６３％、Ａｌ2Ｏ3を１６％、Ｎａ2
Ｏを１１％、ＬｉＯ2を４％、ＭｇＯを２％、及びＣａ
Ｏを４％含有する化学強化し易いガラスを使用する。As aluminosilicate glass, 63% of SiO 2 , 16% of Al 2 O 3 , Na 2
O 11%, LiO 2 4%, MgO 2% and Ca
A glass containing 4% of O and easily chemically strengthened is used.
【００４０】但し、母材とするガラス素板は、Ｓｉ
Ｏ2、Ｎａ2Ｏ、ＣａＯを主成分とするソーダライムガラ
スでも、ボロシリケートガラス、ＬｉＯ2−ＳｉＯ2−Ａ
ｌ2Ｏ3系ガラス、ＲＯ−Ａｌ2Ｏ3−ＳｉＯ2系ガラス等
でこの他の成分としてＺｒＯ2、ＴｉＯ2、ＳｒＯ等を含
んだ化学強化用ガラスでもよく、更に、化学強化をしな
い結晶化ガラスでもよい。However, the glass base material used as the base material is Si
Even soda lime glass containing O 2 , Na 2 O, and CaO as main components, borosilicate glass, LiO 2 —SiO 2 —A
l 2 O 3 based glass, RO-Al 2 O 3 as the other ingredients in -SiO 2 based glass or the like ZrO 2, TiO 2, SrO or the like may be chemically strengthened glass containing, further, no chemical strengthening crystals Glass may be used.
【００４１】［アニール工程Ｐ２］次いで、上記工程１
で作製されたガラス基板を加熱炉に入れ、徐冷点（５１
０℃）付近の５００℃で２時間保持した後、ゆっくりと
冷却することにより、ガラス基板の歪みを除去する。[Annealing Step P2] Next, the above Step 1
The glass substrate prepared in the above was put into a heating furnace, and the annealing point (51)
After maintaining at 500 ° C. around 0 ° C. for 2 hours, the glass substrate is cooled slowly to remove the distortion of the glass substrate.
【００４２】［内外周端面面取り工程Ｐ３］次に、円筒
状の砥石を用いてガラス基板の外周端面及び内周端面に
所定の面取り加工を行う。[Inner / outer peripheral end chamfering step P3] Next, a predetermined chamfering process is performed on the outer peripheral end surface and the inner peripheral end surface of the glass substrate using a cylindrical grindstone.
【００４３】［外周端面研磨工程Ｐ４及び内周端面研磨
工程Ｐ５］次に、平均粒径３μｍの遊離酸化セリウム砥
粒を含む研磨剤を用いたブラシ研磨により内外周端面の
表面粗さをＲａで約０．１μｍ、Ｒｍａｘで約１．１μ
ｍとした。この研磨後、ガラス基板を水洗浄する。[Outer peripheral end surface polishing step P4 and inner peripheral end surface polishing step P5] Next, the surface roughness of the inner and outer peripheral end faces is defined by Ra by brush polishing using an abrasive containing free cerium oxide abrasive grains having an average particle size of 3 μm. About 0.1 μm, about 1.1 μm at Rmax
m. After this polishing, the glass substrate is washed with water.
【００４４】上記工程Ｐ１〜Ｐ４により、ガラス基板を
外径８４ｍｍφ×内径２５ｍｍφ（又は外径６５ｍｍφ
×内径２０ｍｍφ）のサイズとする。By the above steps P1 to P4, the glass substrate is made to have an outer diameter of 84 mmφ × an inner diameter of 25 mmφ (or an outer diameter of 65 mmφ).
× inner diameter 20 mmφ).
【００４５】［主表面第１精密研磨工程Ｐ６］上記工程
Ｐ３で残留した傷を除去するためにガラス基板の主表面
を平均粒径１．２μｍの酸化セリウム研磨剤を用いてポ
リシャ（硬質布）により研磨する。この工程では、ガラ
ス基板に５０ｇ／ｃｍ2の加重をかけて、ガラス基板の
厚みを片面あたり３５μｍ落とすように約２０分間の研
磨を行う。この研磨後、ガラス基板に付着した研磨剤を
落とすために、ガラス基板の主表面に適当な周波数の超
音波を付与しつつ、中性洗剤に水を加えたもので洗浄を
行う。[Main Surface First Precision Polishing Step P6] The main surface of the glass substrate is polished using a cerium oxide abrasive having an average particle diameter of 1.2 μm (hard cloth) in order to remove the scratches remaining in the above step P3. Polishing. In this step, the glass substrate is polished for about 20 minutes by applying a load of 50 g / cm 2 to reduce the thickness of the glass substrate by 35 μm per side. After this polishing, in order to remove the abrasive adhered to the glass substrate, the glass substrate is washed with a neutral detergent to which water has been added while applying ultrasonic waves of an appropriate frequency to the main surface of the glass substrate.
【００４６】［主表面第２精密研磨工程Ｐ７］所望の平
滑面にするために上記工程Ｐ６で研磨されたガラス基板
の主表面を、更に、平均粒径０．８μｍの酸化セリウム
研磨剤を用いてポリシャ（軟質布）により研磨する。こ
の工程では、ガラス基板に５０ｇ／ｃｍ2の加重をかけ
て、ガラス基板の厚みを片面あたり５μｍ落とすように
約１０分間の研磨を行う。この研磨後もガラス基板に付
着した研磨剤を落とすために、ガラス基板の主表面に適
当な周波数の超音波を付与しつつ、中性洗剤に水を加え
たもので洗浄を行う。[Principal Surface Second Precision Polishing Step P7] The main surface of the glass substrate polished in the above step P6 to obtain a desired smooth surface is further coated with a cerium oxide abrasive having an average particle diameter of 0.8 μm. And polished with a polisher (soft cloth). In this step, the glass substrate is polished for about 10 minutes by applying a load of 50 g / cm 2 to reduce the thickness of the glass substrate by 5 μm per side. In order to remove the abrasive adhered to the glass substrate even after the polishing, the glass substrate is washed with a neutral detergent to which water has been added while applying an ultrasonic wave having an appropriate frequency to the main surface of the glass substrate.
【００４７】［化学強化工程Ｐ８］上記工程Ｐ７で研磨
されたガラス基板を硝酸カリウム６０質量％及び硝酸ナ
トリウム４０質量％からなる溶融塩中に４８０度で２時
間漬け、ガラス基板中にカリウムイオン及びナトリウム
イオンを含有させてガラス基板を強化する。この強化後
もガラス基板に付着した溶融塩を落とすために、ガラス
基板の主表面に適当な周波数の超音波を付与しつつ、中
性洗剤に水を加えたもので洗浄を行う。[Chemical Strengthening Step P8] The glass substrate polished in the above step P7 is immersed in a molten salt composed of 60% by mass of potassium nitrate and 40% by mass of sodium nitrate at 480 ° C. for 2 hours, and potassium ions and sodium are added to the glass substrate. The glass substrate is strengthened by containing ions. In order to remove the molten salt adhered to the glass substrate even after the strengthening, the glass substrate is washed with a neutral detergent to which water is added while applying an ultrasonic wave having an appropriate frequency to the main surface of the glass substrate.
【００４８】上記説明では、本発明のアニール工程Ｐ２
は、円盤加工工程Ｐ１の後に実施されたが、主表面第１
精密研磨工程Ｐ６の前に実施されれば、どこで実施して
もよい。In the above description, the annealing step P2 of the present invention
Was performed after the disk processing step P1, but the first main surface
If it is performed before the precision polishing process P6, it may be performed anywhere.
【００４９】[0049]
【実施例】本発明の上記知見を確認するために以下のよ
うな実験を行った。EXAMPLES The following experiments were conducted to confirm the above findings of the present invention.
【００５０】（I）まず、ガラス基板のフラットネス及
び精密研磨後の傷の歩留まりを調べるために、大きく分
けて３つの実験が実施された。具体的には、アニール
処理及び精密研磨が実施されたガラス基板のフラットネ
ス及び精密研磨後の傷の歩留まりを調べる実験と、粗
研磨及び精密研磨が実施されたガラス基板のフラットネ
ス及び精密研磨後の傷の歩留まりを調べる実験と、精
密研磨のみが実施されたガラス基板のフラットネス及び
精密研磨後の傷の歩留まりを調べる実験とが実施され
た。(I) First, in order to examine the flatness of a glass substrate and the yield of scratches after precision polishing, three experiments were broadly performed. Specifically, an experiment to examine the flatness of the glass substrate subjected to the annealing treatment and the precision polishing and the yield of scratches after the precision polishing, and the flatness and the precision after the precision polishing of the glass substrate subjected to the rough polishing and the precision polishing. An experiment for examining the yield of scratches on the glass substrate and an experiment for examining the flatness of a glass substrate subjected to only precision polishing and the yield of scratches after precision polishing were performed.
【００５１】以下、アニール処理及び精密研磨が実施
されたガラス基板のフラットネス及び精密研磨後の傷の
歩留まりを調べる実験について説明する。An experiment for examining the flatness of a glass substrate subjected to annealing and precision polishing and the yield of scratches after precision polishing will be described below.
【００５２】まず、シート状ガラスをドーナツ状円盤に
加工して、外径６５ｍｍφ×内径２０ｍｍφのガラス基
板を２００枚作製し、この２００枚のガラス基板の内外
周端面を面取り加工して、ガラス基板の主表面のフラッ
トネスを測定した。この測定結果を下記表１の実施例Ａ
１〜Ａ３に対応するフラットネスの「面取り加工後」の
項目に示す。尚、上記シート状ガラスの歪み点は４７０
℃であり、徐冷点は５１０℃であり、軟化点は６９０℃
である。First, a sheet-shaped glass was processed into a donut-shaped disk, and 200 glass substrates having an outer diameter of 65 mmφ and an inner diameter of 20 mmφ were prepared, and the inner and outer peripheral end faces of the 200 glass substrates were chamfered. Was measured for flatness. The measurement results are shown in Example 1 in Table 1 below.
This is shown in the item “after chamfering” of the flatness corresponding to 1 to A3. The strain point of the sheet glass is 470.
℃, annealing point is 510 ℃, softening point is 690 ℃
It is.
【００５３】次に、セラミックス板とガラス基板を交互
に積み重ね、１ｋｇの重しを最上部に載せることでガラ
ス基板に５０ｇ／ｃｍ2の荷重を掛け、２００枚のガラ
ス基板を加熱炉に入れた。セラミックス板は、ガラス基
板を交互に積み重ねるため、２０１枚使用され、そのサ
イズは外径７０ｍｍφ×内径２０ｍｍφであり、その平
均（Ave.）のフラットネスは１．５６μｍであり、標準
偏差（σｎ−１）は０．４２μｍであり、平均＋３×標
準偏差（Ave.＋３σｎ−１）は２．８２μｍである。ま
た、セラミックス板は、耐熱性のあるＳｉＯ2又はＡｌ2
Ｏ3を主成分とする。これは、セラミック板が加熱中に
変形して、ガラス基板のフラットネスが矯正できなくな
ることを防止するためである。Next, a ceramic substrate and a glass substrate were alternately stacked, and a weight of 1 kg was placed on the uppermost portion to apply a load of 50 g / cm 2 to the glass substrate, and 200 glass substrates were placed in a heating furnace. . 201 ceramic plates are used for alternately stacking glass substrates, and the size is 70 mmφ in outer diameter × 20 mmφ in inner diameter, the average (Ave.) flatness is 1.56 μm, and the standard deviation (σn− 1) is 0.42 μm, and the average + 3 × standard deviation (Ave. + 3σn−1) is 2.82 μm. The ceramic plate is made of heat-resistant SiO 2 or Al 2
O 3 as a main component. This is to prevent the flatness of the glass substrate from being corrected due to the deformation of the ceramic plate during heating.
【００５４】加熱炉内でのアニール処理では、５００℃
迄昇温させ、５００℃で２時間保持してから、１００℃
／Ｈｒの冷却速度で冷却を実施し、ガラス基板の温度が
室温近くになった時点で加熱炉から取り出した。そし
て、ガラス基板の温度が完全に室温になった後、ガラス
基板の内外周端面を研磨し、ガラス基板の主表面の精密
研磨を行ってからガラス基板のフラットネスを測定し
た。この測定結果を下記表１の実施例Ａ１〜Ａ３に対応
するフラットネスデータの「研磨処理後」の項目に示
す。In the annealing treatment in the heating furnace, 500 ° C.
To 500 ° C for 2 hours, then 100 ° C
The cooling was performed at a cooling rate of / Hr, and the glass substrate was taken out of the heating furnace when the temperature of the glass substrate became close to room temperature. Then, after the temperature of the glass substrate completely reached room temperature, the inner and outer peripheral end surfaces of the glass substrate were polished, and the main surface of the glass substrate was precisely polished, and then the flatness of the glass substrate was measured. The measurement results are shown in the item “after polishing” of the flatness data corresponding to Examples A1 to A3 in Table 1 below.
【００５５】次に、ガラス基板の主表面及び内外周端面
を洗浄し、ガラス基板と溶融塩との間のイオン交換によ
りガラス基板の強度を増加させる化学強化工程を実施
し、さらにガラス基板の主表面及び内外周端面に残留し
ている溶融塩を洗浄した後に、ガラス基板のフラットネ
スを測定した。この測定結果を下記表１の実施例Ａ１〜
Ａ３に対応するフラットネスデータの「製品」の項目に
示す。Next, the main surface and the inner and outer peripheral end faces of the glass substrate are washed, and a chemical strengthening step is performed to increase the strength of the glass substrate by ion exchange between the glass substrate and the molten salt. After cleaning the molten salt remaining on the surface and the inner and outer peripheral end faces, the flatness of the glass substrate was measured. The measurement results are shown in Table A below in Examples A1 to A1.
This is shown in the item of “product” of the flatness data corresponding to A3.
【００５６】以下の表１に、アニール処理及び精密研磨
が実施されたガラス基板のフラットネス及び精密研磨後
の傷歩留まりの測定結果を示す。Table 1 below shows the measurement results of the flatness of the glass substrate subjected to the annealing treatment and the precision polishing and the yield of the scratches after the precision polishing.
【００５７】[0057]
【表１】 [Table 1]
【００５８】表１において、実施例Ａ１はガラス基板の
フラットネスが大きいもの、即ち、ガラス素板の反りが
大きいものであり、実施例Ａ２はガラス基板のフラット
ネスが中間のもの、即ち、ガラス素板の反りが中間のも
のであり、実施例Ａ３はガラス基板のフラットネスが小
さいもの、即ち、ガラス素板の反りが小さいものであ
る。In Table 1, Example A1 shows that the flatness of the glass substrate is large, that is, the glass plate has a large warp, and Example A2 shows that the flatness of the glass substrate is intermediate, that is, the glass substrate has a large flatness. The warpage of the base plate is intermediate, and in Example A3, the flatness of the glass substrate is small, that is, the warp of the glass base plate is small.
【００５９】次に、粗研磨及び精密研磨が実施された
ガラス基板のフラットネス及び精密研磨後の傷の歩留ま
りを調べる実験について説明する。Next, an experiment for examining the flatness of a glass substrate subjected to rough polishing and precision polishing and the yield of scratches after precision polishing will be described.
【００６０】上述したの実験と同様に、まず、シート
状ガラスをドーナツ状円盤に加工して、外径６５ｍｍφ
×内径２０ｍｍφのガラス基板を２００枚作製し、この
２００枚のガラス基板の内外周端面を面取り加工して、
ガラス基板のフラットネスを測定した。この測定結果を
上記表１の比較例Ａ１，Ａ２に対応するフラットネスの
「面取り加工後」の項目に示す。As in the above-described experiment, first, the sheet glass was processed into a donut-shaped disk, and the outer diameter was 65 mmφ.
× 200 glass substrates having an inner diameter of 20 mmφ are manufactured, and the inner and outer peripheral end faces of the 200 glass substrates are chamfered.
The flatness of the glass substrate was measured. The measurement results are shown in the item “after chamfering” of the flatness corresponding to Comparative Examples A1 and A2 in Table 1 above.
【００６１】次に、ガラス基板の内外周端面を研磨した
後、ガラス基板の主表面の粗研磨及び精密研磨を行っ
て、ガラス基板のフラットネスを測定した。この測定結
果を上記表１の比較例Ａ１，Ａ２に対応するフラットネ
スデータの「研磨処理後」の項目に示す。Next, after the inner and outer peripheral end faces of the glass substrate were polished, the main surface of the glass substrate was roughly and finely polished to measure the flatness of the glass substrate. The measurement results are shown in the item “after polishing” of the flatness data corresponding to Comparative Examples A1 and A2 in Table 1 above.
【００６２】次いで、ガラス基板の主表面及び内外周端
面を洗浄し、ガラス基板と溶融塩との間のイオン交換に
よりガラス基板の強度を増加させる化学強化工程を実施
し、さらにガラス基板の主表面及び内外周端面に残留し
ている溶融塩を洗浄した後に、ガラス基板のフラットネ
スを測定した。この測定結果を上記表１の比較例Ａ３，
Ａ４に対応するフラットネスデータの「製品」の項目に
示す。Next, the main surface and the inner and outer peripheral end surfaces of the glass substrate are washed, and a chemical strengthening step is performed to increase the strength of the glass substrate by ion exchange between the glass substrate and the molten salt. After washing the molten salt remaining on the inner and outer peripheral end faces, the flatness of the glass substrate was measured. This measurement result was compared with Comparative Example A3 in Table 1 above.
This is shown in the item of “product” of the flatness data corresponding to A4.
【００６３】最後に、精密研磨のみが実施されたガラ
ス基板のフラットネス及び精密研磨後の傷の歩留まりを
調べる実験について説明する。Finally, an experiment for examining the flatness of a glass substrate subjected to only precision polishing and the yield of scratches after precision polishing will be described.
【００６４】上述したの実験と同様に、まず、シート
状ガラスをドーナツ状円盤に加工して、外径６５ｍｍφ
×内径２０ｍｍφのガラス基板を２００枚作製し、この
２００枚のガラス基板の内外周端面を面取り加工して、
ガラス基板のフラットネスを測定した。この測定結果を
上記表１の比較例Ａ３，Ａ４に対応するフラットネスの
「面取り加工後」の項目に示す。As in the above-described experiment, first, a sheet-shaped glass was processed into a donut-shaped disk, and the outer diameter was 65 mmφ.
× 200 glass substrates having an inner diameter of 20 mmφ are manufactured, and the inner and outer peripheral end faces of the 200 glass substrates are chamfered.
The flatness of the glass substrate was measured. The measurement results are shown in the item “after chamfering” of the flatness corresponding to Comparative Examples A3 and A4 in Table 1 above.
【００６５】次に、ガラス基板の内外周端面を研磨した
後、ガラス基板の主表面の精密研磨のみを行って、ガラ
ス基板のフラットネスを測定した。この測定結果を上記
表１の比較例Ａ３，Ａ４に対応するフラットネスデータ
の「研磨処理後」の項目に示す。Next, after the inner and outer peripheral end faces of the glass substrate were polished, only the main surface of the glass substrate was precisely polished, and the flatness of the glass substrate was measured. The measurement results are shown in the item “after polishing” of the flatness data corresponding to Comparative Examples A3 and A4 in Table 1 above.
【００６６】次いで、ガラス基板の主表面及び内外周端
面を洗浄し、ガラス基板と溶融塩との間のイオン交換に
よりガラス基板の強度を増加させる化学強化工程を実施
し、さらにガラス基板の主表面及び内外周端面に残留し
ている溶融塩を洗浄した後に、ガラス基板のフラットネ
スを測定した。この測定結果を上記表１の比較例Ａ３，
Ａ４に対応するフラットネスデータの「製品」の項目に
示す。Next, the main surface and the inner and outer peripheral end faces of the glass substrate are washed, and a chemical strengthening step is performed to increase the strength of the glass substrate by ion exchange between the glass substrate and the molten salt. After washing the molten salt remaining on the inner and outer peripheral end faces, the flatness of the glass substrate was measured. This measurement result was compared with Comparative Example A3 in Table 1 above.
This is shown in the item of “product” of the flatness data corresponding to A4.
【００６７】上記表１によれば、アニール処理及び精
密研磨が実施された場合（実施例Ａ１〜Ａ３）と、粗
研磨及び精密研磨が実施された場合（比較例Ａ１，Ａ
２）は、「面取り加工後」のフラットネスの値に比べ
て、「製品」のフラットネスの値が大幅に減少している
が、精密研磨のみが実施された場合（比較例Ａ３，Ａ
４）は、「面取り加工後」のフラットネスの値に比べ
て、「製品」のフラットネスの値は殆ど減少していな
い。According to Table 1, the cases where the annealing treatment and the precision polishing were performed (Examples A1 to A3) and the cases where the rough polishing and the precision polishing were performed (Comparative Examples A1 and A3)
In 2), the flatness value of the “product” is significantly reduced as compared with the flatness value of “after the chamfering”, but only the precision polishing is performed (Comparative Examples A3 and A).
In 4), the flatness value of “product” is hardly reduced as compared with the flatness value of “after chamfering”.
【００６８】これは、アニール処理及び精密研磨が実
施された場合（実施例Ａ１〜Ａ３）と、粗研磨及び精
密研磨が実施された場合（比較例Ａ１，Ａ２）にのみ、
ガラス基板を所望のフラットネスにできることを意味
し、また精密研磨のみが実施された場合（比較例Ａ
３，Ａ４）は、ガラス基板のフラットネスを改善するこ
とができないことを意味している。This is because only when the annealing treatment and the precision polishing are performed (Examples A1 to A3) and when the rough polishing and the precision polishing are performed (Comparative Examples A1 and A2),
This means that the glass substrate can have a desired flatness, and only the precision polishing is performed (Comparative Example A
3, A4) means that the flatness of the glass substrate cannot be improved.
【００６９】また、上記表１によれば、アニール処理
及び精密研磨が実施された場合（実施例Ａ３）は、精密
研磨後の傷歩留まりが精密研磨代２０μｍのときに、９
５．７％と高い数値を示しており、一方、粗研磨及び
精密研磨が実施された場合（比較例Ａ２）は、精密研磨
後の傷歩留まりが精密研磨代２０μｍのときに、４２．
１％と低い数値を示している。よって、例えば、精密研
磨後の傷歩留まりとして９５％以上が要求されるとき
に、アニール処理及び精密研磨が実施された場合（実
施例Ａ３）は、２０μｍの精密研磨を実施すれば足りる
が、粗研磨及び精密研磨が実施された場合（比較例Ａ
２）は、２０μｍの精密研磨では足りず、約４０μｍの
精密研磨を実施しなければならない。According to Table 1, when the annealing treatment and the precision polishing were performed (Example A3), when the scratch yield after the precision polishing was 20 μm for the precision polishing,
On the other hand, when rough polishing and precision polishing were performed (Comparative Example A2), when the scratch yield after precision polishing was 20 μm for precision polishing, 42.
The figure is as low as 1%. Therefore, for example, when annealing processing and precision polishing are performed when a scratch yield after precision polishing is required to be 95% or more (Example A3), it is sufficient to perform precision polishing of 20 μm. When polishing and precision polishing are performed (Comparative Example A
In 2), precision polishing of 20 μm is not enough, and precision polishing of about 40 μm must be performed.
【００７０】従って、アニール処理及び精密研磨が実
施された場合（実施例Ａ３）は、精密研磨代を少なくす
ることができ、この結果、精密研磨に長時間を費やす必
要がなくなり、ガラス基板を短時間で所望のフラットネ
スにすることができる。Therefore, when the annealing treatment and the precision polishing are performed (Example A3), the precision polishing allowance can be reduced. As a result, it is not necessary to spend a long time on the precision polishing, and the glass substrate can be shortened. A desired flatness can be obtained in a time.
【００７１】（II）次に、アニール処理において６種類
の加熱保持温度で加熱して、異なる加熱保持温度で加熱
されたガラス基板毎にフラットネス及びガラス基板の主
表面の変形の有無とを調べた。これは、アニール処理に
おける加熱保持温度の適温を調べるための実験である。(II) Next, in the annealing treatment, heating is performed at six different heating and holding temperatures, and the flatness and the presence or absence of deformation of the main surface of the glass substrate are examined for each of the glass substrates heated at different heating and holding temperatures. Was. This is an experiment for examining an appropriate heating and holding temperature in the annealing process.
【００７２】上述した（I）の実験と同様に、ガラス
基板の内外周端面を面取り加工して、ガラス基板のフラ
ットネスを測定した。この測定結果を下記表２の実施例
Ｂ１〜Ｂ４及び比較例Ｂ１，Ｂ２に対応するフラットネ
スの「面取り加工後」の項目に示す。As in the above-mentioned experiment (I), the inner and outer peripheral end faces of the glass substrate were chamfered, and the flatness of the glass substrate was measured. The measurement results are shown in the “after chamfering” of the flatness corresponding to Examples B1 to B4 and Comparative Examples B1 and B2 in Table 2 below.
【００７３】次に、アニール処理における加熱保持温度
を（１）４２０℃（実施例Ｂ１）、（２）５００℃（実
施例Ｂ２）、（３）６００℃（実施例Ｂ３）、（４）７
１０℃（実施例Ｂ４）、（５）３５０℃（比較例Ｂ
１）、（６）８００℃（比較例Ｂ２）の６種類に設定し
て、各々アニール処理を実施した。Next, the heating and holding temperatures in the annealing treatment were set to (1) 420 ° C. (Example B1), (2) 500 ° C. (Example B2), (3) 600 ° C. (Example B3), (4) 7
10 ° C. (Example B4), (5) 350 ° C. (Comparative Example B)
1), (6) Six types of 800 ° C. (Comparative Example B2) were set, and annealing treatments were respectively performed.
【００７４】アニール処理は、母材ガラス又はガラス基
板に生じている変形を矯正するために実施されるが、こ
の変形が生じる理由は大きく分けて２つある。The annealing treatment is performed to correct the deformation occurring in the base glass or the glass substrate. There are two main reasons for the deformation.
【００７５】第１の理由は、フロート法又はダウンドロ
ー法により生成される母材ガラスが、その成形時に外部
から力を受けるためである（以下、この理由による変形
を「塑性変形」という）。この塑性変形を矯正するに
は、母材ガラス又は円盤加工等されたガラス基板の温度
を少なくともガラスの軟化点（６９０℃）近くまで上げ
て、保持しなければならない。一方で、軟化点（６９０
℃）を大幅に上回る温度に設定すると、必要以上に母材
ガラス又はガラス基板を加熱することになり、生産性の
観点から好ましくない。The first reason is that the base glass produced by the float method or the down-draw method receives an external force at the time of molding (hereinafter, deformation due to this reason is referred to as "plastic deformation"). To correct this plastic deformation, the temperature of the base glass or the disk-shaped glass substrate must be raised to at least the softening point (690 ° C.) of the glass and maintained. On the other hand, the softening point (690
If the temperature is set to much higher than (° C.), the base glass or the glass substrate is heated more than necessary, which is not preferable from the viewpoint of productivity.
【００７６】また、第２の理由は、徐冷工程の熱履歴で
母材ガラスの内部に応力が溜まって、歪みが生じるため
である（以下、この理由による変形を「歪み変形」とい
う）。この歪み変形を短時間で効果的に矯正するには、
母材ガラス又はガラス基板の温度を少なくともガラスの
徐冷点（５１０℃）近くまで上げて、保持しなければな
らない。しかし、歪み変形はガラスの歪点（４７０℃）
近くの温度まで上げて、時間をかけて保持すれば矯正す
ることが可能である。The second reason is that stress accumulates in the base glass due to the thermal history of the slow cooling step, causing distortion (hereinafter, deformation due to this reason is referred to as "strain deformation"). To correct this distortion effectively in a short time,
The temperature of the base glass or glass substrate must be raised and maintained at least near the annealing point (510 ° C.) of the glass. However, the strain deformation is the strain point of glass (470 ° C)
It can be corrected by raising the temperature to a nearby temperature and holding it for a long time.
【００７７】上記アニール処理を実施した後、ガラス基
板の内外周端面を研磨し、ガラス基板の主表面の精密研
磨を行ってからガラス基板のフラットネスを測定した。
この測定結果を下記表２の実施例Ｂ１〜Ｂ４及び比較例
Ｂ１，Ｂ２に対応するフラットネスデータの「研磨処理
後」の項目に示す。After the annealing treatment, the inner and outer peripheral end faces of the glass substrate were polished, and the main surface of the glass substrate was precisely polished, and then the flatness of the glass substrate was measured.
The measurement results are shown in the item “after polishing” of the flatness data corresponding to Examples B1 to B4 and Comparative Examples B1 and B2 in Table 2 below.
【００７８】次に、化学強化工程を実施し、さらにガラ
ス基板の主表面及び内外周端面に残留している溶融塩を
洗浄した後に、ガラス基板のフラットネスを測定した。
この測定結果を下記表２の実施例Ｂ１〜Ｂ４及び比較例
Ｂ１，Ｂ２に対応するフラットネスデータの「製品」の
項目に示す。また、このとき同時に、ゴミ等の付着によ
るガラス基板の主表面の変形の有無を確認した。Next, a chemical strengthening step was performed, and the molten salt remaining on the main surface and the inner and outer peripheral end faces of the glass substrate was washed, and then the flatness of the glass substrate was measured.
The measurement results are shown in the “Product” section of the flatness data corresponding to Examples B1 to B4 and Comparative Examples B1 and B2 in Table 2 below. At the same time, the presence or absence of deformation of the main surface of the glass substrate due to attachment of dust and the like was confirmed.
【００７９】以下の表２に、アニール処理及び精密研磨
が実施されたガラス基板のフラットネスの測定結果及び
ゴミ等の付着によるガラス基板の主表面の変形の有無の
確認結果を示す。Table 2 below shows the results of measuring the flatness of the glass substrate subjected to the annealing treatment and the precision polishing, and the results of confirming whether or not the main surface of the glass substrate has been deformed due to the attachment of dust and the like.
【００８０】[0080]
【表２】 [Table 2]
【００８１】上記表２によれば、アニール処理における
加熱保持温度を４２０℃（歪点−５０℃）〜７１０℃
（軟化点＋２０℃）の範囲に設定したときは、「製品」
のフラットネスの「平均（Ave.）」の値が３．０μｍ以
下となっており、平均＋３×標準偏差（Ave.＋３σｎ−
１）の値は６．０μｍ以下となっている。即ち、この範
囲の温度を設定したときは、「製品」のフラットネスは
良好な値を得る。According to Table 2 above, the heating and holding temperature in the annealing treatment was set at 420 ° C. (strain point −50 ° C.) to 710 ° C.
(Softening point + 20 ° C)
The value of “average (Ave.)” of the flatness is 3.0 μm or less, and the average + 3 × standard deviation (Ave. + 3σn−)
The value of 1) is 6.0 μm or less. That is, when the temperature in this range is set, a good value is obtained for the flatness of the “product”.
【００８２】しかしながら、アニール処理における加熱
保持温度を３５０℃（歪点−５０℃を下回る温度）に設
定したときには、「製品」のフラットネスの「平均（Av
e.）」の値が３．０μｍ以上となっており、平均＋３×
標準偏差（Ave.＋３σｎ−１）の値は６．０μｍ以上と
なっており、「製品」のフラットネスは良好な値を得る
ことができない。これは、加熱保持温度が低いためにガ
ラスが粘性流動を起こさず、ガラス内部の歪みを除去で
きないためである。However, when the heating and holding temperature in the annealing process is set to 350 ° C. (a temperature below the strain point of −50 ° C.), the “average (Av)
e.) ”is 3.0 μm or more, and the average is + 3 ×
The value of the standard deviation (Ave. + 3σn−1) is 6.0 μm or more, and a good value of the “product” flatness cannot be obtained. This is because the glass does not cause viscous flow due to the low heating and holding temperature, and the distortion inside the glass cannot be removed.
【００８３】一方、アニール処理における加熱保持温度
を８００℃以上に設定したときには、ガラス基板とセラ
ミック板が固着してしまうので、好ましくない。また、
ゴミ等がガラス基板とセラミック板の間に介在していた
場合は、ゴミが原因となる凹凸がガラス表面に転写され
るという欠点が生じやすくなるので、好ましくない。On the other hand, when the heating and holding temperature in the annealing treatment is set to 800 ° C. or higher, the glass substrate and the ceramic plate adhere to each other, which is not preferable. Also,
It is not preferable that dusts and the like are present between the glass substrate and the ceramic plate, since a defect that irregularities caused by the dusts are transferred to the glass surface easily occurs.
【００８４】従って、アニール処理における加熱保持温
度は４２０℃（歪点−５０℃）〜７１０℃（軟化点＋２
０℃）の範囲に設定すると、良好な値のフラットネスを
得ることができる、即ち、ガラス基板の変形を効果的に
矯正することができる。また、より好ましくは、加熱保
持温度を５１０℃（徐冷点）〜７１０℃（軟化点＋２０
℃）の範囲に設定するとよい。高温にすると、短時間で
ガラス基板の変形を効果的に矯正でき、生産性の向上を
図ることができるからである。Accordingly, the heating and holding temperature in the annealing treatment is 420 ° C. (strain point −50 ° C.) to 710 ° C. (softening point + 2 ° C.).
When the temperature is set in the range of 0 ° C.), a good value of flatness can be obtained, that is, the deformation of the glass substrate can be effectively corrected. More preferably, the heating and holding temperature is set to 510 ° C. (slow cooling point) to 710 ° C. (softening point + 20
° C). At a high temperature, the deformation of the glass substrate can be effectively corrected in a short time, and the productivity can be improved.
【００８５】（III）次に、アニール処理において５種
類の加熱保持時間で加熱して、異なる加熱保持時間で加
熱されたガラス基板毎にフラットネスを調べた。これ
は、アニール処理における適切な加熱保持時間を調べる
ための実験である。(III) Next, in the annealing treatment, heating was performed for five types of heating and holding times, and the flatness of each glass substrate heated for different heating and holding times was examined. This is an experiment for examining an appropriate heating holding time in the annealing process.
【００８６】上述した（I）の実験と同様に、ガラス
基板の内外周端面を面取り加工して、ガラス基板のフラ
ットネスを測定した。この測定結果を下記表３の実施例
Ｃ１〜Ｃ３及び比較例Ｃ１，Ｃ２に対応するフラットネ
スの「面取り加工後」の項目に示す。As in the above-mentioned experiment (I), the inner and outer peripheral end faces of the glass substrate were chamfered, and the flatness of the glass substrate was measured. The measurement results are shown in the “after chamfering” of the flatness corresponding to Examples C1 to C3 and Comparative Examples C1 and C2 in Table 3 below.
【００８７】次に、アニール処理における加熱保持時間
を（１）０．５時間（実施例Ｃ１）、（２）４時間（実
施例Ｃ２）、（３）１０時間（実施例Ｃ３）、（４）
０．０１時間（比較例Ｃ１）、（５）１５時間（比較例
Ｃ２）の５種類に設定して、各々アニール処理を実施し
た。Next, the heating holding time in the annealing treatment was set to (1) 0.5 hour (Example C1), (2) 4 hours (Example C2), (3) 10 hours (Example C3), (4) )
Annealing treatment was performed for each of five types of 0.01 hours (Comparative Example C1) and (5) 15 hours (Comparative Example C2).
【００８８】このアニール処理を実施した後、ガラス基
板の内外周端面を研磨し、ガラス基板の主表面の精密研
磨を行ってからガラス基板のフラットネスを測定した。
この測定結果を下記表３の実施例Ｃ１〜Ｃ３及び比較例
Ｃ１，Ｃ２に対応するフラットネスデータの「研磨処理
後」の項目に示す。After performing this annealing treatment, the inner and outer peripheral end faces of the glass substrate were polished, and the main surface of the glass substrate was precisely polished, and then the flatness of the glass substrate was measured.
The measurement results are shown in the item “after polishing” of the flatness data corresponding to Examples C1 to C3 and Comparative Examples C1 and C2 in Table 3 below.
【００８９】次に、化学強化工程を実施し、さらにガラ
ス基板の主表面及び内外周端面に残留している溶融塩を
洗浄した後に、ガラス基板のフラットネスを測定した。
この測定結果を下記表３の実施例Ｃ１〜Ｃ２及び比較例
Ｃ１，Ｃ２に対応するフラットネスデータの「製品」の
項目に示す。Next, a chemical strengthening step was performed, and the molten salt remaining on the main surface and the inner and outer peripheral end faces of the glass substrate was washed, and then the flatness of the glass substrate was measured.
The measurement results are shown in the “Product” section of the flatness data corresponding to Examples C1 and C2 and Comparative Examples C1 and C2 in Table 3 below.
【００９０】以下の表３に、アニール処理及び精密研磨
が実施されたガラス基板のフラットネスの測定結果を示
す。Table 3 below shows the results of measuring the flatness of the glass substrate subjected to the annealing treatment and the precision polishing.
【００９１】[0091]
【表３】 [Table 3]
【００９２】上記表３によれば、アニール処理における
加熱保持時間を０．５時間〜１０時間の範囲に設定した
ときは、「製品」のフラットネスの「平均（Ave.）」の
値が３．０μｍ以下となっており、平均＋３×標準偏差
（Ave.＋３σｎ−１）の値は６．０μｍ以下となってい
る。即ち、この範囲の時間を設定したときは、「製品」
のフラットネスは良好な値を得る。According to Table 3 above, when the heating holding time in the annealing treatment was set in the range of 0.5 hours to 10 hours, the value of the “average (Ave.)” of the flatness of “product” was 3 hours. 0.0 μm or less, and the value of the average + 3 × standard deviation (Ave. + 3σn−1) is 6.0 μm or less. That is, when the time in this range is set, "product"
Has a good flatness.
【００９３】しかしながら、アニール処理における加熱
保持時間を０．０１時間に設定したときには、「製品」
のフラットネスの「平均（Ave.）」の値が３．０μｍ以
上となっており、平均＋３×標準偏差（Ave.＋３σｎ−
１）の値は６．０μｍ以上となっており、「製品」のフ
ラットネスは良好な値を得ることができない。これは、
加熱保持時間が短いためにガラスが粘性流動を起こさ
ず、ガラス内部の歪みを除去できないためである。However, when the heating holding time in the annealing treatment was set to 0.01 hour, the "product"
The value of the “average (Ave.)” of the flatness is 3.0 μm or more, and the average + 3 × standard deviation (Ave. + 3σn−)
The value of 1) is 6.0 μm or more, and a good value cannot be obtained for the flatness of the “product”. this is,
This is because the glass does not cause viscous flow due to the short heating and holding time, and the distortion inside the glass cannot be removed.
【００９４】一方、アニール処理における加熱保持時間
を１５時間に設定したときには、加熱保持時間を０．５
〜１０時間の範囲に設定したときと同様に、「製品」の
フラットネスは良好な値を得る。しかしながら、加熱保
持時間を１０時間に設定したときと比べて、「製品」の
フラットネスは殆ど変わらないので、加熱保持時間を１
５時間に設定することは、必要以上に母材ガラス又はガ
ラス基板を加熱することになり、生産性の観点から好ま
しくなく。On the other hand, when the heating holding time in the annealing treatment is set to 15 hours, the heating holding time is set to 0.5 hour.
As in the case where the time is set in the range of 10 to 10 hours, the flatness of the “product” obtains a good value. However, the flatness of the “product” is hardly changed as compared with the case where the heating holding time is set to 10 hours.
Setting to 5 hours unnecessarily heats the base glass or glass substrate, which is not preferable from the viewpoint of productivity.
【００９５】従って、アニール処理における加熱保持時
間を０．５〜１０時間の範囲に設定すると、良好な値の
フラットネスを得ることができる、即ち、ガラス基板の
変形を効果的に矯正することができる。また、より好ま
しくは、加熱保持時間を０．５〜４時間の範囲に設定す
るとよい。短時間でガラス基板の変形を効果的に矯正で
き、生産性の向上を図ることができるからである。Therefore, when the heating holding time in the annealing treatment is set in the range of 0.5 to 10 hours, a good value of flatness can be obtained, that is, the deformation of the glass substrate can be effectively corrected. it can. Also, more preferably, the heating holding time is set in the range of 0.5 to 4 hours. This is because the deformation of the glass substrate can be effectively corrected in a short time, and the productivity can be improved.
【００９６】（IV）次に、フラットネスの異なる３種類
のセラミックス板を使用してアニール処理を実施した場
合のガラス基板のフラットネスを調べる実験を実施し
た。(IV) Next, an experiment was conducted to examine the flatness of the glass substrate when annealing was performed using three types of ceramic plates having different flatness.
【００９７】ガラス基板とセラミックス板を積層して、
アニール処理を実施すると、ガラス基板のフラットネス
をセラミックス板のフラットネスに沿わすことができる
が、セラミックス板のフラットネスの値が大きくなる
と、ガラス基板のフラットネスの値も大きくなるので、
セラミックス板の主表面のフラットネスの値を一定値以
下にしなければならない。従って、適切なフラットネス
を有するセラミックス板を調べるために、実験を実施し
た。A glass substrate and a ceramic plate are laminated,
By performing the annealing process, the flatness of the glass substrate can be made to conform to the flatness of the ceramic plate.However, as the flatness value of the ceramic plate increases, the flatness value of the glass substrate also increases.
The flatness value of the main surface of the ceramic plate must be kept below a certain value. Therefore, an experiment was conducted to investigate a ceramic plate having an appropriate flatness.
【００９８】まず、上述した（I）の実験と同様に、
ガラス基板の内外周端面を面取り加工して、ガラス基板
のフラットネスを測定した。この測定結果を下記表４の
実施例Ｄ１，Ｄ２及び比較例Ｄ１に対応するフラットネ
スの「面取り加工後」の項目に示す。First, similarly to the above-mentioned experiment (I),
The inner and outer peripheral end faces of the glass substrate were chamfered, and the flatness of the glass substrate was measured. The measurement results are shown in the “after chamfering” of the flatness corresponding to Examples D1 and D2 and Comparative Example D1 in Table 4 below.
【００９９】次に、フラットネスの「平均（Ave.）」の
値が（１）１．５６μｍ（実施例Ｄ１）、（２）２．０
２μｍ（実施例Ｄ２）、（３）７．８２（比較例Ｄ１）
である３種類のセラミックス板を使用して、各種類のセ
ラミック板毎にガラス基板を交互に積み重ねて、アニー
ル処理を実施した。Next, the value of the “average (Ave.)” of the flatness is (1) 1.56 μm (Example D1), (2) 2.0
2 μm (Example D2), (3) 7.82 (Comparative Example D1)
Using three types of ceramic plates, glass substrates were alternately stacked for each type of ceramic plate, and an annealing process was performed.
【０１００】このアニール処理を実施した後、ガラス基
板の内外周端面を研磨し、ガラス基板の主表面の精密研
磨を行ってからガラス基板のフラットネスを測定した。
この測定結果を下記表４の実施例Ｄ１，Ｄ２及び比較例
Ｄ１に対応するフラットネスデータの「研磨処理後」の
項目に示す。After performing this annealing treatment, the inner and outer peripheral end faces of the glass substrate were polished, and the main surface of the glass substrate was precisely polished, and then the flatness of the glass substrate was measured.
The measurement results are shown in the item “after polishing” of the flatness data corresponding to Examples D1 and D2 and Comparative Example D1 in Table 4 below.
【０１０１】次に、化学強化工程を実施し、さらにガラ
ス基板の主表面及び内外周端面に残留している溶融塩を
洗浄した後に、ガラス基板のフラットネスを測定した。
この測定結果を下記表４の実施例Ｄ１，Ｄ２及び比較例
Ｄ１に対応するフラットネスデータの「製品」の項目に
示す。Next, a chemical strengthening step was performed, and the molten salt remaining on the main surface and the inner and outer peripheral end faces of the glass substrate was washed, and then the flatness of the glass substrate was measured.
The measurement results are shown in the item of “product” of the flatness data corresponding to Examples D1 and D2 and Comparative Example D1 in Table 4 below.
【０１０２】以下の表４に、アニール処理及び精密研磨
を実施した場合のガラス基板のフラットネスの測定結果
を示す。Table 4 below shows the measurement results of the flatness of the glass substrate when the annealing treatment and the precision polishing were performed.
【０１０３】[0103]
【表４】 [Table 4]
【０１０４】上記表４によれば、フラットネスの「平均
（Ave.）」の値が３．０μｍ以下であるセラミックス板
を使用して、アニール処理を実施した場合には、「製
品」のフラットネスの「平均（Ave.）」の値が３．０μ
ｍ以下となっており、平均＋３×標準偏差（Ave.＋３σ
ｎ−１）の値は６．０μｍ以下となっている。即ち、フ
ラットネスの「平均（Ave.）」の値が３．０μｍ以下で
あるセラミックス板を使用したときは、ガラス基板の
「製品」のフラットネスは良好な値をことができる。ま
た、セラミックス板のフラットネスの「平均（Ave.）」
の値が低い程、ガラス基板の「製品」のフラットネスは
良好な値を得ることができる。According to Table 4 above, when a ceramic plate having a flatness “Ave.” value of 3.0 μm or less was used and the annealing process was performed, the flatness of the “product” was reduced. Nest "Ave." value is 3.0μ
m or less, and the average + 3 × standard deviation (Ave. + 3σ)
The value of n-1) is 6.0 μm or less. That is, when a ceramic plate having a flatness “Ave.” value of 3.0 μm or less is used, the flatness of the “product” of the glass substrate can have a good value. In addition, "average (Ave.)"
The lower the value, the better the flatness of the “product” of the glass substrate.
【０１０５】一方、フラットネスの「平均（Ave.）」の
値が３．０μｍ以上であるセラミックス板を使用して、
アニール処理を実施した場合には、「製品」のフラット
ネスの「平均（Ave.）」の値が３．０μｍ以上となって
おり、平均＋３×標準偏差（Ave.＋３σｎ−１）の値は
６．０μｍ以上となっている。即ち、フラットネスの
「平均（Ave.）」の値が３．０μｍ以上であるセラミッ
クス板を使用したときは、ガラス基板の「製品」のフラ
ットネスは良好な値を得ることができない。On the other hand, using a ceramics plate having a flatness “average (Ave.)” value of not less than 3.0 μm,
When the annealing process is performed, the value of the “average (Ave.)” of the flatness of the “product” is 3.0 μm or more, and the value of the average + 3 × standard deviation (Ave. + 3σn−1) is It is not less than 6.0 μm. That is, when a ceramic plate having a flatness “Ave.” value of 3.0 μm or more is used, a good value of the flatness of the “product” of the glass substrate cannot be obtained.
【０１０６】従って、フラットネスの「平均（Ave.）」
の値が３．０μｍ以下であるセラミックス板を使用し
て、アニール処理を実施する場合に、ガラス基板の生産
性の向上を図ることができる。Therefore, the “average (Ave.)” of the flatness
When the annealing process is performed using a ceramic plate having a value of 3.0 μm or less, the productivity of the glass substrate can be improved.
【０１０７】（V）次に、アニール処理において、５種
類の加圧力をガラス基板にかけて、異なる加圧力がかけ
られたガラス基板毎にフラットネスを調べた。これは、
ガラス基板にかける適切な加圧力を調べるための実験で
ある。(V) Next, in the annealing treatment, five kinds of pressures were applied to the glass substrates, and the flatness was examined for each glass substrate to which different pressures were applied. this is,
This is an experiment for examining an appropriate pressure applied to a glass substrate.
【０１０８】まず、上述した（I）の実験と同様に、
ガラス基板の内外周端面を面取り加工して、ガラス基板
のフラットネスを測定した。この測定結果は下記表５の
実施例Ｅ１〜Ｅ３及び比較例Ｅ１，Ｅ２に対応するフラ
ットネスの「面取り加工後」の項目に示す。First, similarly to the above-mentioned experiment (I),
The inner and outer peripheral end faces of the glass substrate were chamfered, and the flatness of the glass substrate was measured. The measurement results are shown in the “After chamfering” of the flatness corresponding to Examples E1 to E3 and Comparative examples E1 and E2 in Table 5 below.
【０１０９】次に、アニール処理において、ガラス基板
にかける加圧力を（１）５ｇ／ｃｍ 2（実施例Ｅ１）、
（２）５０ｇ／ｃｍ2（実施例Ｅ２）、（３）５００ｇ
／ｃｍ 2（実施例Ｅ３）、（４）１ｇ／ｃｍ2（比較例Ｅ
１）、（５）７５０ｇ／ｃｍ2（比較例Ｅ２）の５種類
に設定して、各々アニール処理を実施した。Next, in the annealing process, the glass substrate
(1) 5g / cm Two(Example E1),
(2) 50 g / cmTwo(Example E2), (3) 500 g
/ Cm Two(Example E3), (4) 1 g / cmTwo(Comparative Example E
1), (5) 750 g / cmTwoFive types of (Comparative Example E2)
, And each annealing treatment was performed.
【０１１０】このアニール処理を実施した後、ガラス基
板の内外周端面を研磨し、ガラス基板の主表面の精密研
磨を行ってからガラス基板のフラットネスを測定した。
この測定結果を下記表５の実施例Ｅ１〜Ｅ３及び比較例
Ｅ１，Ｅ２に対応するフラットネスデータの「研磨処理
後」の項目に示す。After performing this annealing treatment, the inner and outer peripheral end faces of the glass substrate were polished, and the main surface of the glass substrate was precisely polished, and then the flatness of the glass substrate was measured.
The measurement results are shown in the “after polishing” item of the flatness data corresponding to Examples E1 to E3 and Comparative Examples E1 and E2 in Table 5 below.
【０１１１】次に、化学強化工程を実施し、さらにガラ
ス基板の主表面及び内外周端面に残留している溶融塩を
洗浄した後に、ガラス基板のフラットネスを測定した。
この測定結果を下記表５の実施例Ｅ１〜Ｅ２及び比較例
Ｅ１，Ｅ２に対応するフラットネスデータの「製品」の
項目に示す。Next, a chemical strengthening step was performed, and the molten salt remaining on the main surface and the inner and outer peripheral end faces of the glass substrate was washed, and then the flatness of the glass substrate was measured.
The measurement results are shown in the item of “product” of the flatness data corresponding to Examples E1 to E2 and Comparative Examples E1 and E2 in Table 5 below.
【０１１２】以下の表５に、アニール処理及び精密研磨
が実施されたガラス基板の主表面のフラットネスの測定
結果を示す。Table 5 below shows the measurement results of the flatness of the main surface of the glass substrate subjected to the annealing treatment and the precision polishing.
【０１１３】[0113]
【表５】 [Table 5]
【０１１４】上記表５によれば、アニール処理におい
て、ガラス基板に５〜５００ｇ／ｃｍ 2の加圧力をかけ
たときは、「製品」のフラットネスの「平均（Ave.）」
の値が３．０μｍ以下となっており、平均＋３×標準偏
差（Ave.＋３σｎ−１）の値は６．０μｍ以下となって
いる。即ち、この範囲の加圧力をかけたときは、「製
品」のフラットネスは良好な値を得る。According to Table 5 above, the annealing treatment
5 to 500 g / cm on a glass substrate TwoApply pressure
The “average (Ave.)” of the “product” flatness
Is 3.0 μm or less, and the average is + 3 × standard deviation.
The value of the difference (Ave. + 3σn-1) is 6.0 μm or less.
I have. That is, when a pressing force in this range is applied,
The product has a good flatness.
【０１１５】しかしながら、アニール処理において、ガ
ラス基板に１ｇ／ｃｍ2の加圧力をかけたときは、「製
品」のフラットネスの「平均（Ave.）」の値が３．０μ
ｍ以上となり、平均＋３×標準偏差（Ave.＋３σｎ−
１）の値は６．０μｍ以上となっており、「製品」のフ
ラットネスは良好な値を得ることができない。これは、
アニール処理の加熱時において、粘性の低下したガラス
基板をセラミック板に押しつける力が不足したためであ
る。However, when a pressure of 1 g / cm 2 was applied to the glass substrate in the annealing treatment, the “average (Ave.)” value of the flatness of the “product” was 3.0 μm.
m or more, and the average + 3 × standard deviation (Ave. + 3σn−
The value of 1) is 6.0 μm or more, and a good value cannot be obtained for the flatness of the “product”. this is,
This is because, at the time of heating in the annealing treatment, the force for pressing the glass substrate having reduced viscosity against the ceramic plate was insufficient.
【０１１６】一方、アニール処理において、ガラス基板
に５００ｇ／ｃｍ2を超える加圧力をかけると、ガラス
基板の厚みが薄くなる方向に変形する虞が生じる。ま
た、ガラス基板とセラミック板の間にゴミ等が介在する
ときは、その形状が転写されるという不都合が生じるの
で、好ましくない。On the other hand, if a pressing force exceeding 500 g / cm 2 is applied to the glass substrate in the annealing process, there is a possibility that the glass substrate is deformed in a direction to reduce the thickness. Further, when dusts or the like are interposed between the glass substrate and the ceramic plate, the shape is undesirably transferred, which is not preferable.
【０１１７】従って、アニール処理において、ガラス基
板に５〜５００ｇ／ｃｍ2の加圧力をかけると、良好な
値のフラットネスを得ることができる、即ち、ガラス基
板の変形を効果的に矯正することができる。Therefore, when a pressing force of 5 to 500 g / cm 2 is applied to the glass substrate in the annealing process, a good value of flatness can be obtained, that is, the deformation of the glass substrate can be effectively corrected. Can be.
【０１１８】（VI）次に、アニール処理において、４種
類の冷却速度でガラス基板を冷却し、異なる冷却速度で
冷却されたガラス基板毎にフラットネスを調べた。(VI) Next, in the annealing treatment, the glass substrates were cooled at four different cooling rates, and the flatness was examined for each of the glass substrates cooled at different cooling rates.
【０１１９】アニール処理の加熱でガラス基板のフラッ
トネスを矯正しても、その後の冷却で大きな歪みが発生
しないようにする必要がある。ガラス基板の冷却速度が
速い場合は、ガラス基板に大きな歪みが発生するため、
冷却速度は遅い方が好ましいが、あまりに遅い冷却速度
になると、ガラス基板の作製に長時間を要するため、ガ
ラス基板の生産性の向上を図ることができない。従っ
て、良好な値のフラットネスを取り、かつ短時間でガラ
ス基板を作製するのに適切な冷却速度を調べるための実
験を実施した。Even if the flatness of the glass substrate is corrected by heating in the annealing treatment, it is necessary to prevent a large distortion from occurring in the subsequent cooling. If the cooling rate of the glass substrate is high, large distortion occurs in the glass substrate,
It is preferable that the cooling rate is low. However, if the cooling rate is too low, it takes a long time to manufacture the glass substrate, and thus it is not possible to improve the productivity of the glass substrate. Therefore, an experiment was conducted to determine a cooling rate appropriate for obtaining a glass substrate with a good value of flatness and in a short time.
【０１２０】まず、上述した（I）の実験と同様に、
ガラス基板の内外周端面を面取り加工して、ガラス基板
のフラットネスを測定した。この測定結果を下記表６の
実施例Ｆ１，Ｆ２及び比較例Ｆ１，Ｆ２に対応するフラ
ットネスの「面取り加工後」の項目に示す。First, similarly to the above-mentioned experiment (I),
The inner and outer peripheral end faces of the glass substrate were chamfered, and the flatness of the glass substrate was measured. The measurement results are shown in the “after chamfering” of the flatness corresponding to Examples F1 and F2 and Comparative Examples F1 and F2 in Table 6 below.
【０１２１】次に、アニール処理において、ガラス基板
の冷却速度を（１）１０℃／Ｈｒ（実施例Ｆ１）、
（２）１００℃／Ｈｒ（実施例Ｆ２）、（３）２℃／Ｈ
ｒ（比較例Ｆ１）、（４）２００℃／Ｈｒ（比較例Ｆ
２）の４種類に設定して、各々アニール処理を実施し
た。Next, in the annealing treatment, the cooling rate of the glass substrate was set to (1) 10 ° C./Hr (Example F1).
(2) 100 ° C / Hr (Example F2), (3) 2 ° C / Hr
r (Comparative Example F1), (4) 200 ° C./Hr (Comparative Example F
Annealing treatment was performed for each of the four types 2).
【０１２２】このアニール処理を実施した後、ガラス基
板の内外周端面を研磨し、ガラス基板の主表面の精密研
磨を行ってからガラス基板のフラットネスを測定した。
この測定結果を下記表６の実施例Ｆ１，Ｆ２及び比較例
Ｆ１，Ｆ２に対応するフラットネスデータの「研磨処理
後」の項目に示す。After performing this annealing treatment, the inner and outer peripheral end faces of the glass substrate were polished, and the main surface of the glass substrate was precisely polished, and then the flatness of the glass substrate was measured.
The measurement results are shown in the “after polishing” item of the flatness data corresponding to Examples F1 and F2 and Comparative Examples F1 and F2 in Table 6 below.
【０１２３】次に、化学強化工程を実施し、さらにガラ
ス基板の主表面及び内外周端面に残留している溶融塩を
洗浄した後に、ガラス基板のフラットネスを測定した。
この測定結果を下記表６の実施例Ｆ１，Ｆ２及び比較例
Ｆ１，Ｆ２に対応するフラットネスデータの「製品」の
項目に示す。Next, a chemical strengthening step was performed, and the molten salt remaining on the main surface and the inner and outer peripheral end faces of the glass substrate was washed, and then the flatness of the glass substrate was measured.
The measurement results are shown in the item of “product” of the flatness data corresponding to Examples F1 and F2 and Comparative Examples F1 and F2 in Table 6 below.
【０１２４】以下の表６に、アニール処理及び精密研磨
が実施されたガラス基板の主表面のフラットネスの測定
結果を示す。Table 6 below shows the measurement results of the flatness of the main surface of the glass substrate subjected to the annealing treatment and the precision polishing.
【０１２５】[0125]
【表６】 [Table 6]
【０１２６】上記表６によれば、アニール処理におい
て、ガラス基板の冷却速度を２℃／Ｈｒ〜１００℃／Ｈ
ｒの範囲に設定したときは、「製品」のフラットネスの
「平均（Ave.）」の値が３．０μｍ以下となっており、
平均＋３×標準偏差（Ave.＋３σｎ−１）の値は６．０
μｍ以下となっている。即ち、この範囲の冷却速度に設
定したときは、「製品」のフラットネスは良好な値を得
る。According to Table 6, in the annealing process, the cooling rate of the glass substrate was 2 ° C./Hr to 100 ° C./H.
r, the value of the “average (Ave.)” of the flatness of the “product” is 3.0 μm or less,
The value of average + 3 × standard deviation (Ave. + 3σn−1) is 6.0.
μm or less. That is, when the cooling rate is set in this range, a good value is obtained for the flatness of the “product”.
【０１２７】しかしながら、ガラス基板の冷却速度を２
００℃／Ｈｒに設定したときは、「製品」のフラットネ
スの「平均（Ave.）」の値が３．０μｍ以上となり、平
均＋３×標準偏差（Ave.＋３σｎ−１）の値は６．０μ
ｍ以上となっており、「製品」のフラットネスは良好な
値を得ることができない。これは、ガラス基板の冷却速
度が速すぎて、ガラス基板に大きな歪みが発生するため
である。However, the cooling rate of the glass substrate was set to 2
When set to 00 ° C./Hr, the value of the “average (Ave.)” of the flatness of “product” becomes 3.0 μm or more, and the value of the average + 3 × standard deviation (Ave. + 3σn−1) is 6. 0μ
m or more, and the flatness of the “product” cannot be a good value. This is because the cooling rate of the glass substrate is too high, causing large distortion in the glass substrate.
【０１２８】一方、ガラス基板の冷却速度を２℃／Ｈｒ
に設定したときは、「製品」のフラットネスは良好な値
を得るものの、冷却時間が長時間となるため、ガラス基
板の作製に長時間を要することになる。On the other hand, the cooling rate of the glass substrate was 2 ° C./Hr
When the value is set to, the flatness of the “product” obtains a good value, but the cooling time is long, and thus it takes a long time to manufacture the glass substrate.
【０１２９】従って、アニール処理において、ガラス基
板の冷却速度を１０〜１００℃／Ｈｒの範囲に設定した
ときに、良好な値のフラットネスを取り、かつ短時間で
ガラス基板を作製することができる。この結果、ガラス
基板の生産性の向上を図ることができる。Therefore, in the annealing treatment, when the cooling rate of the glass substrate is set in the range of 10 to 100 ° C./Hr, a good value of flatness can be obtained and the glass substrate can be manufactured in a short time. . As a result, the productivity of the glass substrate can be improved.
【０１３０】上述したように、本実施の形態によれば、
研磨処理前にアニール処理を行うので、ガラス基板の研
磨前に予めガラス基板に生じている変形を矯正すること
ができ、精密研磨代を少なくすることができる。これに
より、精密研磨に長時間を費やす必要がなくなり、ガラ
ス基板を短時間で所望のフラットネスにすることができ
る。よって、ガラス基板を短時間で作製し、生産性の向
上を図ることができる。As described above, according to the present embodiment,
Since the annealing process is performed before the polishing process, the deformation that has occurred in the glass substrate before polishing the glass substrate can be corrected in advance, and the precision polishing allowance can be reduced. Accordingly, it is not necessary to spend a long time for precision polishing, and the desired flatness of the glass substrate can be achieved in a short time. Therefore, a glass substrate can be manufactured in a short time and productivity can be improved.
【０１３１】また、アニール処理及び精密研磨を実施
し、粗研磨を実施しないので、ガラス基板の主表面に深
い傷が生じることがなくなり、精密研磨代を少なくする
ことができ、この結果、精密研磨に長時間を費やす必要
がなくなり、ガラス基板を短時間で所望のフラットネス
にすることができる。また、粗研磨を実施しないこと
で、粗研磨に使用される研磨剤の廃液処理や粗研磨後の
洗浄による洗浄液の廃液処理を必要としないので、自然
環境への負荷を減らすことができる。また、精密研磨代
を少なくすることができ、廃液処理を必要としないの
で、ガラス基板の作製にかかるコストを抑えることがで
きる。Further, since the annealing and the precision polishing are performed and the rough polishing is not performed, deep scratches are not generated on the main surface of the glass substrate, and the precision polishing allowance can be reduced. As a result, the precision polishing can be performed. It is not necessary to spend a long time on the glass substrate, and the desired flatness of the glass substrate can be achieved in a short time. In addition, since the rough polishing is not performed, it is not necessary to perform a waste liquid treatment of an abrasive used for the rough polishing or a waste liquid treatment of a cleaning liquid by washing after the rough polishing, so that a load on a natural environment can be reduced. In addition, the cost for precision polishing can be reduced and waste liquid treatment is not required, so that the cost for manufacturing a glass substrate can be reduced.
【０１３２】[0132]
【発明の効果】以上詳細に説明したように、請求項１記
載のガラス基板の製造方法によれば、ガラス基板の主表
面の研磨工程前に、該ガラス基板にアニール処理を実施
するので、ガラス基板の研磨前に予めガラス基板に生じ
ている変形を矯正することができ、この結果、精密研磨
代を少なくすることができる。これにより、精密研磨に
長時間を費やす必要がなくなり、ガラス基板を短時間で
所望のフラットネスにすることができる。よって、ガラ
ス基板を短時間で作製し、生産性の向上を図ることがで
きる。As described above in detail, according to the method of manufacturing a glass substrate according to the first aspect, the glass substrate is annealed before the main surface polishing step of the glass substrate. Before the substrate is polished, the deformation occurring in the glass substrate can be corrected in advance, and as a result, the precision polishing allowance can be reduced. Accordingly, it is not necessary to spend a long time for precision polishing, and the desired flatness of the glass substrate can be achieved in a short time. Therefore, a glass substrate can be manufactured in a short time and productivity can be improved.
【０１３３】請求項２記載のガラス基板の製造方法によ
れば、ガラス基板の主表面の研磨工程では、精密研磨の
みを実施する。即ち、粗研磨を実施しないので、ガラス
基板の主表面に深い傷が生じることがなくなり、精密研
磨代を少なくすることができ、この結果、精密研磨に長
時間を費やす必要がなくなり、ガラス基板を短時間で所
望のフラットネスにすることができる。また、粗研磨を
実施しないことで、粗研磨に使用される研磨剤の廃液処
理や粗研磨後の洗浄による洗浄液の廃液処理を必要とし
ないので、自然環境への負荷を減らすことができる。ま
た、精密研磨代を少なくすることができ、廃液処理を必
要としないので、ガラス基板の作製にかかるコストを抑
えることができる。According to the glass substrate manufacturing method of the present invention, in the polishing step of the main surface of the glass substrate, only precision polishing is performed. That is, since rough polishing is not performed, deep scratches on the main surface of the glass substrate do not occur, and the precision polishing allowance can be reduced. As a result, it is not necessary to spend a long time on precision polishing, and A desired flatness can be obtained in a short time. In addition, since the rough polishing is not performed, it is not necessary to perform a waste liquid treatment of an abrasive used for the rough polishing or a waste liquid treatment of a cleaning liquid by washing after the rough polishing, so that a load on a natural environment can be reduced. In addition, the cost for precision polishing can be reduced and waste liquid treatment is not required, so that the cost for manufacturing a glass substrate can be reduced.
【０１３４】請求項３のガラス基板の製造方法によれ
ば、アニール処理における加熱保持温度をガラス基板の
歪点の温度より５０℃低い温度より高く、軟化点の温度
より２０℃高い温度より低い温度とするので、良好な値
のフラットネスを得ることができる、即ち、ガラス基板
の変形を効果的に矯正することができる。According to the method of manufacturing a glass substrate of the third aspect, the heating and holding temperature in the annealing treatment is higher than the temperature of 50 ° C. lower than the strain point of the glass substrate and lower than the temperature of 20 ° C. higher than the softening point. Therefore, a good value of flatness can be obtained, that is, the deformation of the glass substrate can be effectively corrected.
【０１３５】請求項４記載のガラス基板の製造方法によ
れば、アニール処理における加熱保持温度を前記ガラス
基板の徐冷点の温度より高く、軟化点の温度より２０℃
高い温度より低い温度とするので、短時間でガラス基板
の変形を効果的に矯正でき、生産性の向上を図ることが
できるからである。According to the method of manufacturing a glass substrate of the present invention, the heating and holding temperature in the annealing treatment is higher than the temperature of the annealing point of the glass substrate and 20 ° C. from the temperature of the softening point.
Since the temperature is set lower than the high temperature, the deformation of the glass substrate can be effectively corrected in a short time, and the productivity can be improved.
【０１３６】請求項５記載のガラス基板の製造方法によ
れば、アニール処理における加熱保持時間を０．５〜１
０時間とするので、良好な値のフラットネスを得ること
ができる、即ち、ガラス基板の変形を効果的に矯正する
ことができる。また、より好ましくは、加熱保持時間を
０．５〜４時間の範囲に設定するとよい。短時間でガラ
ス基板の変形を効果的に矯正でき、生産性の向上を図る
ことができるからである。According to the glass substrate manufacturing method of the present invention, the heating and holding time in the annealing treatment is set to 0.5 to 1
Since the time is set to 0 hours, a good value of flatness can be obtained, that is, the deformation of the glass substrate can be effectively corrected. Also, more preferably, the heating holding time is set in the range of 0.5 to 4 hours. This is because the deformation of the glass substrate can be effectively corrected in a short time, and the productivity can be improved.
【０１３７】請求項６記載のガラス基板の製造方法によ
れば、アニール処理は、ガラス基板とセラミック板を交
互に積層した状態で加熱するので、ガラス基板のフラッ
トネスをセラミックス板のフラットネスに沿わすことが
できる。According to the method of manufacturing a glass substrate according to the sixth aspect, the annealing is performed in a state where the glass substrate and the ceramic plate are alternately laminated, so that the flatness of the glass substrate conforms to the flatness of the ceramic plate. I can do it.
【０１３８】請求項７記載のガラス基板の製造方法によ
れば、セラミック板は、ＳｉＯ2及びＡｌ2Ｏ3のうち少
なくとも一方が主成分であるので、セラミック板が加熱
中に変形して、ガラス基板のフラットネスが矯正できな
くなることを防止することができる。According to the glass substrate manufacturing method of the present invention, at least one of SiO 2 and Al 2 O 3 is a main component of the ceramic plate. It is possible to prevent the flatness of the substrate from being corrected.
【０１３９】請求項８記載のガラス基板の製造方法によ
れば、セラミック板のフラットネスが３．０μｍ以下で
あるので、良好な値のフラットネスを得ることができ
る、即ち、ガラス基板の変形を効果的に矯正することが
できる。According to the glass substrate manufacturing method of the present invention, since the flatness of the ceramic plate is 3.0 μm or less, a good value of flatness can be obtained. It can be corrected effectively.
【０１４０】請求項９記載のガラス基板の製造方法によ
れば、アニール処理において、ガラス基板の主表面にか
ける加圧力が５〜５００ｇ／ｃｍ2であるので、良好な
値のフラットネスを得ることができる、即ち、ガラス基
板の変形を効果的に矯正することができる。According to the glass substrate manufacturing method of the ninth aspect, in the annealing treatment, the pressure applied to the main surface of the glass substrate is 5 to 500 g / cm 2 , so that a good value of flatness can be obtained. That is, the deformation of the glass substrate can be effectively corrected.
【０１４１】請求項１０記載のガラス基板の製造方法に
よれば、アニール処理におけるガラス基板の冷却速度が
１０〜１００℃／Ｈｒであるので、良好な値のフラット
ネスを取り、かつ短時間でガラス基板を作製することが
できる。この結果、ガラス基板の生産性の向上を図るこ
とができる。According to the glass substrate manufacturing method of the present invention, since the cooling rate of the glass substrate in the annealing treatment is 10 to 100 ° C./Hr, a good value of flatness can be obtained and the glass can be formed in a short time. A substrate can be made. As a result, the productivity of the glass substrate can be improved.
【０１４２】請求項１２記載のガラス基板によれば、請
求項１乃至１１のいずれか１項に記載されたガラス基板
の製造方法で製造されるので、短時間で作製することが
でき、生産性の向上を図ることができる。According to the glass substrate of the twelfth aspect, since the glass substrate is manufactured by the method of manufacturing a glass substrate according to any one of the first to eleventh aspects, the glass substrate can be manufactured in a short time and the productivity can be improved. Can be improved.
【図１】本発明の実施の形態に係るガラス基板の製造手
順を示す工程図である。FIG. 1 is a process chart showing a procedure for manufacturing a glass substrate according to an embodiment of the present invention.
【図２】従来のガラス基板の製造手順を示す工程図であ
る。FIG. 2 is a process chart showing a conventional glass substrate manufacturing procedure.
【図３】図２の従来のガラス基板の製造手順における主
表面粗研磨工程Ｐ５でガラス基板の主表面に生じる深い
傷を示す図である。3 is a diagram showing deep scratches generated on the main surface of the glass substrate in a main surface rough polishing step P5 in the conventional glass substrate manufacturing procedure of FIG.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G015 EA00 4G059 AA08 AB02 AC03 HB03 HB13 HB14 5D006 CB04 CB07 5D112 AA02 BA03 GA09 GA14 GB02 GB03 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G015 EA00 4G059 AA08 AB02 AC03 HB03 HB13 HB14 5D006 CB04 CB07 5D112 AA02 BA03 GA09 GA14 GB02 GB03
Claims (12)
記ガラス基板にアニール処理を実施することを特徴とす
るガラス基板の製造方法。1. A method for manufacturing a glass substrate, wherein an annealing process is performed on the glass substrate before the step of polishing the main surface of the glass substrate.
は、精密研磨のみを実施することを特徴とする請求項１
記載のガラス基板の製造方法。2. The method according to claim 1, wherein in the polishing step of the main surface of the glass substrate, only precision polishing is performed.
The manufacturing method of the glass substrate as described in the above.
を前記ガラス基板の歪点の温度より５０℃低い温度より
高く、軟化点の温度より２０℃高い温度より低い温度と
することを特徴とする請求項１又は２記載のガラス基板
の製造方法。3. The heating and holding temperature in the annealing treatment is set to a temperature higher than a temperature lower by 50 ° C. than a temperature of a strain point of the glass substrate and lower than a temperature higher by 20 ° C. than a temperature of a softening point of the glass substrate. 3. The method for producing a glass substrate according to 1 or 2.
を前記ガラス基板の徐冷点の温度より高く、軟化点の温
度より２０℃高い温度より低い温度とすることを特徴と
する請求項１乃至３のいずれか１項に記載のガラス基板
の製造方法。4. The method according to claim 1, wherein a heating and holding temperature in the annealing process is higher than a temperature of an annealing point of the glass substrate and lower than a temperature of 20 ° C. higher than a temperature of a softening point of the glass substrate. A method for producing a glass substrate according to any one of the preceding claims.
を０．５〜１０時間とすることを特徴とする請求項１乃
至４のいずれか１項に記載のガラス基板の製造方法。5. The method for producing a glass substrate according to claim 1, wherein a heating holding time in the annealing treatment is set to 0.5 to 10 hours.
セラミック板を交互に積層した状態で加熱することを特
徴とする請求項１乃至５のいずれか１項に記載のガラス
基板の製造方法。6. The method of manufacturing a glass substrate according to claim 1, wherein the annealing is performed by heating the glass substrate and the ceramic plate alternately.
Ｏ3のうち少なくとも一方が主成分であることを特徴と
する請求項６記載のガラス基板の製造方法。7. The ceramic plate is made of SiO 2 and Al 2.
7. The method for manufacturing a glass substrate according to claim 6, wherein at least one of O 3 is a main component.
０μｍ以下であることを特徴とする請求項６又は７記載
のガラス基板の製造方法。8. The flatness of the ceramic plate is 3.
The method for manufacturing a glass substrate according to claim 6, wherein the thickness is 0 μm or less.
基板の主表面にかける加圧力が５〜５００ｇ／ｃｍ2で
あることを特徴とする請求項１乃至８のいずれか１項に
記載のガラス基板の製造方法。9. The glass substrate according to claim 1, wherein a pressure applied to the main surface of the glass substrate in the annealing treatment is 5 to 500 g / cm 2 . Production method.
基板の冷却速度が１０〜１００℃／Ｈｒであることを特
徴とする請求項１乃至９のいずれか１項に記載のガラス
基板の製造方法。10. The method of manufacturing a glass substrate according to claim 1, wherein a cooling rate of the glass substrate in the annealing process is 10 to 100 ° C./Hr.
は、前記ガラス基板の研磨量を片面当たり４０μｍ以下
とすることを特徴とする請求項１乃至１０のいずれか１
項に記載のガラス基板の製造方法。11. The polishing method according to claim 1, wherein in the polishing step of the main surface of the glass substrate, the polishing amount of the glass substrate is set to 40 μm or less per one side.
Item 13. The method for producing a glass substrate according to item 1.
載されたガラス基板の製造方法で製造されたことを特徴
とするガラス基板。12. A glass substrate manufactured by the method for manufacturing a glass substrate according to claim 1. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001151397A JP2002338283A (en) | 2001-05-21 | 2001-05-21 | Glass substrate manufacturing method and glass substrate manufactured by the manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001151397A JP2002338283A (en) | 2001-05-21 | 2001-05-21 | Glass substrate manufacturing method and glass substrate manufactured by the manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002338283A true JP2002338283A (en) | 2002-11-27 |
Family
ID=18996250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001151397A Pending JP2002338283A (en) | 2001-05-21 | 2001-05-21 | Glass substrate manufacturing method and glass substrate manufactured by the manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002338283A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006306660A (en) * | 2005-04-28 | 2006-11-09 | Konica Minolta Opto Inc | Method and device for correcting glass blank |
| JP2008287779A (en) * | 2007-05-16 | 2008-11-27 | Konica Minolta Opto Inc | Method for manufacturing glass substrate for information recording medium, glass substrate for information recording medium, and magnetic recording medium |
| JP2011108344A (en) * | 2009-11-20 | 2011-06-02 | Asahi Glass Co Ltd | Glass substrate for information recording medium, and magnetic disk |
| KR20130108383A (en) * | 2010-10-08 | 2013-10-02 | 애플 인크. | Annealing of glass to alter chemical strengthening behavior |
| US9725359B2 (en) | 2011-03-16 | 2017-08-08 | Apple Inc. | Electronic device having selectively strengthened glass |
| US9778685B2 (en) | 2011-05-04 | 2017-10-03 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US9944554B2 (en) | 2011-09-15 | 2018-04-17 | Apple Inc. | Perforated mother sheet for partial edge chemical strengthening and method therefor |
| US9946302B2 (en) | 2012-09-19 | 2018-04-17 | Apple Inc. | Exposed glass article with inner recessed area for portable electronic device housing |
| US10021798B2 (en) | 2010-09-17 | 2018-07-10 | Apple Inc. | Glass enclosure |
| US10133156B2 (en) | 2012-01-10 | 2018-11-20 | Apple Inc. | Fused opaque and clear glass for camera or display window |
| US10144669B2 (en) | 2011-11-21 | 2018-12-04 | Apple Inc. | Self-optimizing chemical strengthening bath for glass |
| US10185113B2 (en) | 2009-03-02 | 2019-01-22 | Apple Inc. | Techniques for strengthening glass covers for portable electronic devices |
| US10189743B2 (en) | 2010-08-18 | 2019-01-29 | Apple Inc. | Enhanced strengthening of glass |
| US10320959B2 (en) | 2011-09-29 | 2019-06-11 | Apple Inc. | Multi-layer transparent structures for electronic device housings |
| US10401904B2 (en) | 2011-05-04 | 2019-09-03 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US10781135B2 (en) | 2011-03-16 | 2020-09-22 | Apple Inc. | Strengthening variable thickness glass |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09102125A (en) * | 1995-10-05 | 1997-04-15 | Ngk Insulators Ltd | Production of crystallized glass substrate for magnetic disk |
| JPH1111965A (en) * | 1997-06-16 | 1999-01-19 | Toshiba Ceramics Co Ltd | Removal of distortion of synthetic quartz glass product for optical use |
| JP2000302484A (en) * | 1999-04-14 | 2000-10-31 | Nippon Electric Glass Co Ltd | Heat-resistant surface plate and heat treatment of glass substrate using the same |
| JP2002087835A (en) * | 2000-09-14 | 2002-03-27 | Hoya Corp | Production process of crystallized glass, production process of crystallized glass substrate and production process of information recording medium |
-
2001
- 2001-05-21 JP JP2001151397A patent/JP2002338283A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09102125A (en) * | 1995-10-05 | 1997-04-15 | Ngk Insulators Ltd | Production of crystallized glass substrate for magnetic disk |
| JPH1111965A (en) * | 1997-06-16 | 1999-01-19 | Toshiba Ceramics Co Ltd | Removal of distortion of synthetic quartz glass product for optical use |
| JP2000302484A (en) * | 1999-04-14 | 2000-10-31 | Nippon Electric Glass Co Ltd | Heat-resistant surface plate and heat treatment of glass substrate using the same |
| JP2002087835A (en) * | 2000-09-14 | 2002-03-27 | Hoya Corp | Production process of crystallized glass, production process of crystallized glass substrate and production process of information recording medium |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006306660A (en) * | 2005-04-28 | 2006-11-09 | Konica Minolta Opto Inc | Method and device for correcting glass blank |
| JP2008287779A (en) * | 2007-05-16 | 2008-11-27 | Konica Minolta Opto Inc | Method for manufacturing glass substrate for information recording medium, glass substrate for information recording medium, and magnetic recording medium |
| US10185113B2 (en) | 2009-03-02 | 2019-01-22 | Apple Inc. | Techniques for strengthening glass covers for portable electronic devices |
| JP2011108344A (en) * | 2009-11-20 | 2011-06-02 | Asahi Glass Co Ltd | Glass substrate for information recording medium, and magnetic disk |
| US10189743B2 (en) | 2010-08-18 | 2019-01-29 | Apple Inc. | Enhanced strengthening of glass |
| US10021798B2 (en) | 2010-09-17 | 2018-07-10 | Apple Inc. | Glass enclosure |
| KR20130108383A (en) * | 2010-10-08 | 2013-10-02 | 애플 인크. | Annealing of glass to alter chemical strengthening behavior |
| KR101616606B1 (en) * | 2010-10-08 | 2016-04-28 | 애플 인크. | Annealing of glass to alter chemical strengthening behavior |
| US12043571B2 (en) | 2011-03-16 | 2024-07-23 | Apple Inc. | Electronic device having selectively strengthened glass |
| US9725359B2 (en) | 2011-03-16 | 2017-08-08 | Apple Inc. | Electronic device having selectively strengthened glass |
| US11518708B2 (en) | 2011-03-16 | 2022-12-06 | Apple Inc. | Electronic device having selectively strengthened glass |
| US10781135B2 (en) | 2011-03-16 | 2020-09-22 | Apple Inc. | Strengthening variable thickness glass |
| US10676393B2 (en) | 2011-03-16 | 2020-06-09 | Apple Inc. | Electronic device having selectively strengthened glass |
| US12079032B2 (en) | 2011-05-04 | 2024-09-03 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US10761563B2 (en) | 2011-05-04 | 2020-09-01 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US11681326B2 (en) | 2011-05-04 | 2023-06-20 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US9778685B2 (en) | 2011-05-04 | 2017-10-03 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US10401904B2 (en) | 2011-05-04 | 2019-09-03 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US10983557B2 (en) | 2011-05-04 | 2021-04-20 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US10656674B2 (en) | 2011-05-04 | 2020-05-19 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US9944554B2 (en) | 2011-09-15 | 2018-04-17 | Apple Inc. | Perforated mother sheet for partial edge chemical strengthening and method therefor |
| US10574800B2 (en) | 2011-09-29 | 2020-02-25 | Apple Inc. | Multi-layer transparent structures for electronic device housings |
| US11368566B2 (en) | 2011-09-29 | 2022-06-21 | Apple Inc. | Multi-layer transparent structures for electronic device housings |
| US10320959B2 (en) | 2011-09-29 | 2019-06-11 | Apple Inc. | Multi-layer transparent structures for electronic device housings |
| US10144669B2 (en) | 2011-11-21 | 2018-12-04 | Apple Inc. | Self-optimizing chemical strengthening bath for glass |
| US10551722B2 (en) | 2012-01-10 | 2020-02-04 | Apple Inc. | Fused opaque and clear glass for camera or display window |
| US10133156B2 (en) | 2012-01-10 | 2018-11-20 | Apple Inc. | Fused opaque and clear glass for camera or display window |
| US9946302B2 (en) | 2012-09-19 | 2018-04-17 | Apple Inc. | Exposed glass article with inner recessed area for portable electronic device housing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002338283A (en) | Glass substrate manufacturing method and glass substrate manufactured by the manufacturing method | |
| JP4185266B2 (en) | Manufacturing method of substrate for information recording medium | |
| JP4947754B2 (en) | Information recording medium substrate and method for manufacturing the same, information recording medium, and glass base plate | |
| JP4556962B2 (en) | Method for reducing residual stress of blank material, method for manufacturing blank material and glass substrate for information recording medium | |
| JP5297549B2 (en) | Manufacturing method of glass substrate for magnetic disk and manufacturing method of magnetic disk | |
| US20110189505A1 (en) | Method for manufacturing glass substrate for magnetic recording medium | |
| US20100247977A1 (en) | Subastrate for a magnetic disk and method of manufacturing the same | |
| JP5542989B2 (en) | Manufacturing method of glass substrate for magnetic disk and manufacturing method of magnetic disk | |
| JP2972830B1 (en) | Method of manufacturing glass substrate for magnetic recording medium | |
| JP4713064B2 (en) | Manufacturing method of glass substrate for information recording medium and glass substrate for information recording medium manufactured by the manufacturing method | |
| CN102906814B (en) | The manufacture method of glass substrate for information recording medium and the manufacture method of disk | |
| JPWO2013145503A1 (en) | Manufacturing method of glass substrate for HDD | |
| JPH10198942A (en) | Glass substrate for recording medium and recording medium using this substrate | |
| JP2010079948A (en) | Method of manufacturing glass substrate for magnetic disk | |
| CN104081457A (en) | Manufacturing method of glass substrate for HDD | |
| JP3714501B2 (en) | Thin plate glass and method for producing the same | |
| CN108564970B (en) | Method for manufacturing glass substrate, and method for manufacturing glass substrate for magnetic disk | |
| CN104093524A (en) | Method for producing glass product and method for producing magnetic disk | |
| CN117859177A (en) | Magnetic disk substrate, method for manufacturing same, and magnetic disk | |
| JP4225375B2 (en) | Manufacturing method of glass substrate | |
| JP2001023154A (en) | Method of manufacturing glass substrate for magnetic recording medium | |
| JP2000154040A (en) | Glass substrate surface smoothing method | |
| JP2003022522A (en) | Manufacturing method for substrate for information recording medium | |
| CN105684080B (en) | Glass substrate for disc and heat-assisted magnetic recording disk | |
| CN118946931B (en) | Magnetic disk and substrate for magnetic disk |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20040301 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040416 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20041004 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20060130 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080428 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100203 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100209 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100607 |