JP2002322555A - Diamond-like carbon multilayered film - Google Patents
Diamond-like carbon multilayered filmInfo
- Publication number
- JP2002322555A JP2002322555A JP2001126827A JP2001126827A JP2002322555A JP 2002322555 A JP2002322555 A JP 2002322555A JP 2001126827 A JP2001126827 A JP 2001126827A JP 2001126827 A JP2001126827 A JP 2001126827A JP 2002322555 A JP2002322555 A JP 2002322555A
- Authority
- JP
- Japan
- Prior art keywords
- film
- density
- layer
- carbon
- carbon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 127
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 description 155
- 239000010408 film Substances 0.000 description 153
- 239000000463 material Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000007789 gas Substances 0.000 description 19
- 239000002184 metal Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 18
- 229910021385 hard carbon Inorganic materials 0.000 description 15
- 238000005299 abrasion Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000013011 mating Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- -1 TiN Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000560 X-ray reflectometry Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000016571 aggressive behavior Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明が属する技術分野】本発明は工具,金型などの耐
摩耗性部材、自動車用部品,家電部品に代表される産業
用もしくは一般家庭用の機械部材・摺動部材、カードや
チケットの自動読み取り機やプリンターなどの書き込み
/読み取りヘッドの保護膜などに用いられ、特に耐摩耗
性と高い摺動特性とが要求される表面保護膜として好適
なダイヤモンドライクカーボン多層膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wear-resistant member such as a tool or a mold, an industrial or general household mechanical member / sliding member typified by an automobile part and a home appliance part, and an automatic card / ticket member. The present invention relates to a diamond-like carbon multilayer film which is used as a protective film for a write / read head of a reader or a printer, and is particularly suitable as a surface protective film requiring abrasion resistance and high sliding characteristics.
【0002】[0002]
【従来の技術】硬質炭素膜は、一般的にダイヤモンドラ
イクカーボン(以下、DLCと略記する場合がある。)
膜と呼ばれる。DLCは、硬質非晶質炭素、無定形炭
素、硬質無定形炭素、i−カーボン、ダイヤモンド状炭
素など様々な呼称が用いられているが、これらの用語に
特に明確な区別はない。このようなさまざまな用語が使
われるDLCの本質は、構造的にタイヤモンドとグラフ
ァイトが混ざり合った両者の中間の構造を有しているこ
とにあり、ダイヤモンドと同様に、硬度、耐摩耗性、固
体潤滑性、熱伝導性、化学的安定性等に優れていること
から、例えば摺動部材、金型、切削工具類、耐摩耗性機
械部品、研磨材、磁気・光学部品等の各種部材の表面保
護膜として利用されつつある。2. Description of the Related Art A hard carbon film is generally made of diamond-like carbon (hereinafter sometimes abbreviated as DLC).
Called membrane. DLC uses various names such as hard amorphous carbon, amorphous carbon, hard amorphous carbon, i-carbon, and diamond-like carbon, but there is no particular distinction between these terms. The essence of DLC, in which these various terms are used, is that it has a structurally intermediate structure between diamond and graphite, and, like diamond, hardness, wear resistance, Because of its excellent solid lubricity, thermal conductivity, chemical stability, etc., for example, various members such as sliding members, dies, cutting tools, wear-resistant mechanical parts, abrasives, magnetic and optical parts, etc. It is being used as a surface protective film.
【0003】DLC膜の特質として、鉄、アルミ等の金
属や、ガラス等のセラミックスなどのさまざまな相手材
料との接触において摩擦係数(以下、μと記載する場合
がある。)が小さいことが挙げられる。しかし、DLC
膜の摩擦係数は測定環境や相手材により大きく変化する
ことが知られており、一般的に、例えば鉄系の相手材の
場合には大気中では0.15〜0.4、真空中や乾燥窒
素雰囲気では0.1以下となる。DLC膜の低μ化機構
については数多くの研究がなされているが、一般的には
DLC膜より相手材に炭素原子が付着し、これがグラフ
ァイト化し、グラファイトのc面(π結合面)で滑り変
形し、自己潤滑材として働くことによって低μ化するも
のと考えられている。A characteristic of the DLC film is that it has a small friction coefficient (hereinafter sometimes referred to as μ) in contact with various mating materials such as metals such as iron and aluminum and ceramics such as glass. Can be But DLC
It is known that the coefficient of friction of the film varies greatly depending on the measurement environment and the mating material. In general, for example, in the case of an iron-based mating material, it is 0.15 to 0.4 in the atmosphere, in a vacuum or in a dry state. In a nitrogen atmosphere, it is 0.1 or less. Numerous studies have been made on the mechanism of reducing the μ of the DLC film. However, generally, carbon atoms adhere to the partner material from the DLC film, which is graphitized, and slip deformed on the c-plane (π-bonded plane) of the graphite. However, it is considered that μ is reduced by acting as a self-lubricating material.
【0004】DLC膜を硬質コーティング膜として実用
に供する場合、鉄系相手材に対して0.1程度の低摩擦
係数の実現、耐摩耗性を左右する薄膜硬度の確保、コー
ティングの信頼性に関わる基材との密着性の確保はそれ
ぞれ必須の条件であり、これらの条件に関して多くの提
案がなされている。特に有力な手投としては、DLCへ
の合金元素の添加と、膜の積層構造化が挙げられる。合
金元素の添加については、例えばSiを添加した場合、
μは0.1〜0.15であり、硬度は30GPa程度で
あることが報告されている。DLCの積層構造化は内部
応力の低減や密着度の改善、厚膜化による耐久性の向
上、耐腐食性の向上に寄与し、また電気抵抗を制御する
有力な手段として認識されており、例えば、以下の技術
が知られている。When a DLC film is put into practical use as a hard coating film, it is required to realize a low friction coefficient of about 0.1 with respect to an iron-based counterpart material, to secure a thin film hardness which influences abrasion resistance, and to relate to coating reliability. Ensuring the adhesion to the substrate is an essential condition, and many proposals have been made for these conditions. Particularly effective methods include the addition of alloying elements to the DLC and the formation of a laminated film. Regarding the addition of alloy elements, for example, when Si is added,
μ is 0.1 to 0.15, and the hardness is reported to be about 30 GPa. The layered structure of DLC contributes to reduction of internal stress and improvement of adhesion, improvement of durability by thickening, improvement of corrosion resistance, and is recognized as a powerful means of controlling electric resistance. The following technologies are known.
【0005】(1) 特開平5−65625号公報には、基
板上に硬質炭素膜と、硬質炭素膜との親和性の高い材料
である、シリコン、ゲルマニウム、炭化ケイ素、窒化ケ
イ素、二酸化ケイ素、ガラス、アルミナから選ばれた1
種類以上のバッファ層とを交互に積層し、最外層を硬質
炭素膜とする積層体が記載されている。 (2) 特開平10−237827号公報には、硬質炭素膜
もしくは少なくとも1種類以上の金属元素が添加された
硬質炭素膜と、少なくとも1種類以上の金属または金属
炭化物または金属窒化物または金属炭窒化物が繰り返し
交互に積層された積層体、もしくは異なる種類の金属元
素または異なる添加量の金属元素が添加された少なくと
も2種類以上の硬質炭素膜が繰り返し交互に積層された
積層体が記載されている。 (3) 特開平10−226874号公報には、電気抵抗率
が少なくとも2桁相違する硬質炭素膜が交互に積層され
た積層体が記載されている。 (4) 特開平11−1013号公報には、サーマルヘッド
の保護膜として、炭素を主成分とする炭素層と、Si、
Ti、Zr、Hf、V、Nb、Ta、Cr、Moおよび
Wからなる群より選択される少なくとも1種以上または
少なくとも2種以上からなる半金属または金属の合金を
主成分とする金属層との積層膜が記載されている。 (5) 特開平10−72288号公報には、真空状態下
で、炭素化合物ガスを含む成膜用原料ガスを電圧印加に
よりプラズマ化し、薄膜状炭素層および微粒子状炭素層
からなる炭素層単位が1つあるいは2つ以上形成された
炭素膜により応力を低減し、密着性の改善と厚膜化によ
り耐久性を改善することが記載されている。 (6) 特開平9−298097号公報には、DLC積層膜
において、導電性膜およびその導電性膜に比して硬度の
高い膜を交互に、少なくとも3層以上積層し、最外層を
導電性膜とする積層体が記載されている。(1) Japanese Patent Application Laid-Open No. 5-65625 discloses that a hard carbon film and a material having a high affinity for the hard carbon film, such as silicon, germanium, silicon carbide, silicon nitride, silicon dioxide, 1 selected from glass and alumina
A laminate is described in which more than one kind of buffer layers are alternately laminated and the outermost layer is a hard carbon film. (2) JP-A-10-237827 discloses a hard carbon film or a hard carbon film to which at least one kind of metal element is added, and at least one kind of metal or metal carbide, metal nitride or metal carbonitride. It describes a laminate in which objects are repeatedly laminated alternately, or a laminate in which at least two or more types of hard carbon films to which different types of metal elements or different amounts of metal elements are added are repeatedly and alternately laminated. . (3) JP-A-10-226874 describes a laminate in which hard carbon films having electric resistivity different by at least two orders are alternately laminated. (4) JP-A-11-1013 discloses that a carbon layer containing carbon as a main component, Si,
A metal layer mainly composed of a semimetal or a metal alloy of at least one or at least two selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W; A laminated film is described. (5) JP-A-10-72288 discloses that a raw material gas for film formation containing a carbon compound gas is turned into plasma by applying a voltage under vacuum to form a carbon layer unit comprising a thin-film carbon layer and a fine-particle carbon layer. It is described that stress is reduced by one or two or more carbon films formed, and durability is improved by improving adhesion and increasing the film thickness. (6) Japanese Patent Application Laid-Open No. 9-298097 discloses that in a DLC laminated film, at least three or more layers of a conductive film and a film having a higher hardness than the conductive film are alternately laminated, and the outermost layer is made of a conductive film. A laminate as a film is described.
【0006】[0006]
【発明が解決しようとする課題】DLCに代表される硬
質炭素膜の高い摺動特性は、それに含まれる、もしくは
摺動中に摺動界面に形成されるグラファイト結晶のπ結
合面のすべりによる自己潤滑に起因するものと考えられ
ている。よって、グラファイト自体は変形しやすく、硬
質炭素膜自体に微粒子状のグラファイトを含むような膜
では、摩擦係数は低く摺動性は良好となるが、膜硬度自
体が低いため、摺動による摩耗が激しい。すなわち、低
摩擦係数を得ようとすると高硬度が得られない、もしく
は低摩擦係数でも低硬度であれば耐摩耗性が不十分とな
り、いずれにしてもコーティング膜としては耐久性が不
足するという問題が生じる。逆に、DLC膜中のグラフ
ァイト成分を少なくした場合には、膜硬度は増加して耐
摩耗性を確保できるが、グラファイトの自己潤滑性によ
る低摩擦係数化は十分に達成されない。このため、従来
の単層構造のDLCや、積層構造のものでも、少なくと
も実用上必要とされる0.1〜0.15程度の低摩擦係
数が安定的に実現され、かつ高耐摩耗性を備えたDLC
膜は得られていない。The high sliding property of a hard carbon film represented by DLC is caused by the slip of the π-bonded surface of the graphite crystal contained in the hard carbon film or formed at the sliding interface during sliding. It is believed to be due to lubrication. Therefore, graphite itself is easily deformed, and a film in which fine carbon particles are included in the hard carbon film itself has a low coefficient of friction and good slidability, but because the film hardness itself is low, wear due to sliding is low. Intense. That is, high hardness cannot be obtained when a low friction coefficient is to be obtained, or wear resistance is insufficient if the hardness is low even with a low friction coefficient, and in any case, the durability of the coating film is insufficient. Occurs. Conversely, when the graphite component in the DLC film is reduced, the film hardness is increased and the wear resistance can be secured, but the reduction in the coefficient of friction due to the self-lubricating property of graphite is not sufficiently achieved. For this reason, even in a conventional DLC having a single-layer structure or a laminated structure, a low friction coefficient of at least about 0.1 to 0.15, which is practically required, is stably realized, and high wear resistance is achieved. DLC with
No membrane was obtained.
【0007】また、硬質コーティング膜材料として従来
から使われているTiN、TiAlN、CrNなどの金
属窒化物の場合には、成膜時に生じるマクロパーティク
ルと呼ばれる飛沫粉や、相手材との摩擦により相手材を
攻撃して、あるいは相手材に攻撃されることで生じる摩
耗粉を潤滑材として利用することで摩擦係数を低減させ
ている。しかし、かかる硬質材料を用いる場合、摺動部
材の消耗、摩擦係数の経時的な増加、摩耗粉による目詰
まりなどのトラブルが生じる。In the case of metal nitrides such as TiN, TiAlN, and CrN which have been conventionally used as a hard coating film material, splashing powder called macroparticles generated at the time of film formation and friction with a partner material are caused. The friction coefficient is reduced by using abrasion powder generated by attacking the material or being attacked by the partner material as a lubricant. However, when such a hard material is used, troubles such as wear of the sliding member, an increase in the friction coefficient over time, and clogging by wear powder occur.
【0008】本発明はかかる問題に鑑みなされたもの
で、耐摩耗性に優れ、かつ摩擦係数が低く、しかも相手
材に対する攻撃性が低い、優れた摺動特性を有するダイ
ヤモンドライクカーボン膜を提供することを目的とす
る。The present invention has been made in view of such a problem, and provides a diamond-like carbon film having excellent abrasion resistance, a low coefficient of friction, and a low aggressiveness to a counterpart material, and excellent sliding characteristics. The purpose is to:
【0009】[0009]
【課題を解決するための手段】本発明者らは、DLCの
微細構造によって摩擦係数や薄膜硬度の発現が大きく影
響を受けることに注目し、微細構造の異なるDLC超薄
膜を機能的に積層させ、微細構造と摺動特性との関係を
調べた。その結果、DLC膜の膜密度を制御し、膜密度
が異なる2種類のDLC膜を適当な膜厚、周期にて積層
させることで優れた耐摩耗性と摺動特性が得られること
を知見し、本発明を完成するに至った。Means for Solving the Problems The present inventors have paid attention to the fact that the development of the coefficient of friction and the hardness of the thin film are greatly affected by the fine structure of DLC, and functionally laminate ultra-thin DLC films having different fine structures. The relationship between the microstructure and the sliding characteristics was examined. As a result, it has been found that by controlling the film density of the DLC film and laminating two types of DLC films having different film densities with an appropriate film thickness and cycle, excellent wear resistance and sliding characteristics can be obtained. Thus, the present invention has been completed.
【0010】すなわち、本発明によるダイヤモンドライ
クカーボン多層膜は、膜密度の低いダイヤモンドライク
カーボンで形成された低密度炭素層と、膜密度の高いダ
イヤモンドライクカーボンで形成された高密度炭素層と
が交互に積層され、前記低密度炭素層は平均の膜密度が
2.2g/cm3以下であり、一方前記高密度炭素層は平均
の膜密度が2.3〜3.2g/cm3であり、前記高密度炭
素層は膜中に含まれる水素成分が5at%以下であり、前
記低密度炭素層の層厚が0.4〜30nmであり、前記
高密度炭素層の層厚が0.4〜10nmであり、前記低
密度炭素層の層厚T1と高密度炭素層の層厚T2の比T
1/T2が5〜0.2とされたものである。前記多層膜
において、好ましくは最外層を前記低密度炭素層で形成
し、その層厚を2〜200nmとするのがよい。That is, the diamond-like carbon multilayer film according to the present invention has a low-density carbon layer formed of diamond-like carbon having a low film density and a high-density carbon layer formed of diamond-like carbon having a high film density alternately. The low density carbon layer has an average film density of 2.2 g / cm 3 or less, while the high density carbon layer has an average film density of 2.3 to 3.2 g / cm 3 , The high-density carbon layer has a hydrogen component contained in the film of 5 at% or less, the low-density carbon layer has a thickness of 0.4 to 30 nm, and the high-density carbon layer has a thickness of 0.4 to 30 nm. 10 nm, and the ratio T of the layer thickness T1 of the low density carbon layer to the layer thickness T2 of the high density carbon layer.
1 / T2 is 5 to 0.2. In the multilayer film, the outermost layer is preferably formed of the low-density carbon layer, and the thickness thereof is preferably set to 2 to 200 nm.
【0011】[0011]
【発明の実施の形態】本発明の実施形態にかかるDLC
多層膜は、図1に示すように、基材1の表面に中間層2
を介して積層形成された多層膜3であって、膜密度の低
いDLCによって形成された低密度炭素層4と、膜密度
の高いDLCによって形成された高密度炭素層5とが交
互に積層された積層部7を有し、さらにその上に前記層
4と同様の低密度炭素層で形成された最上層6が形成さ
れている。DESCRIPTION OF THE PREFERRED EMBODIMENTS DLC according to an embodiment of the present invention
As shown in FIG. 1, the multilayer film is formed on the surface of the substrate 1 by the intermediate layer 2.
, A low-density carbon layer 4 formed by DLC having a low film density and a high-density carbon layer 5 formed by DLC having a high film density are alternately stacked. And a top layer 6 made of the same low-density carbon layer as the layer 4 is formed thereon.
【0012】ここで、多層膜3においてDLCで形成さ
れた炭素層の密度を変えて積層する技術的意義について
詳しく説明する。DLC膜において、耐摩耗性の向上を
図るには、摩擦面における膜の塑性変形を避けることが
必要である。すなわち、塑性指数を小さくすることが望
しく、この塑性指数は材料表面の形状とともに材料の性
質である弾性定数E、膜硬度Hおよびこれらの比E/H
に強く依存するものであり、材料的にはE,Hが大き
く、E/Hの小さな材料が良いとされる(『薄膜トライ
ポロジー』、榎本,三宅著、東京大学出版会発行、p5
8)。金属材料の場合、E/Hは種類によらずほぼ一定
であるが、金属に比してE/Hの小さなセラミックスで
は耐摩耗性が高く、硬質コーティング膜として好適な所
以である。また、材料の摩耗率はHに反比例する。一
方、摩擦係数は摩擦面でのせん断応力に対する抵抗力に
依存し、これはコーティング膜表面の硬度と密接な相関
を持つ。例えば、固体潤滑膜として用いられるグラファ
イト、ニ硫化モリブデン、銀、インジウムなどは硬度が
低く、せん断カに対する抵抗力が小さいため、摩擦係数
は低い値をとる。Here, the technical significance of changing the density of the carbon layer formed by DLC in the multilayer film 3 and stacking it will be described in detail. In order to improve the wear resistance of the DLC film, it is necessary to avoid plastic deformation of the film on the friction surface. That is, it is desirable to reduce the plasticity index. This plasticity index is determined by the elastic constant E, the film hardness H, and the ratio E / H of the material properties together with the shape of the material surface.
It is considered that a material having a large E and H and a small E / H is good as a material ("Thin Film Tribology", Enomoto and Miyake, published by The University of Tokyo Press, p5
8). In the case of a metal material, the E / H is almost constant irrespective of the type, but ceramics having a small E / H as compared to metal have high wear resistance, which is a reason suitable as a hard coating film. The wear rate of the material is inversely proportional to H. On the other hand, the coefficient of friction depends on the resistance to shear stress on the friction surface, which has a close correlation with the hardness of the coating film surface. For example, graphite, molybdenum disulfide, silver, indium, and the like used as a solid lubricating film have low hardness and low resistance to shear force, and thus have a low friction coefficient.
【0013】上記説明より、DLC膜であっても、単一
の材質である限り、耐摩耗性と低摩擦係数とを同時に実
現することは本質的に不可能である。一方、本発明者
は、DLC膜の機械的特性およびそれに相関した耐摩耗
性や摺摺動特性について鋭意研究した結果、これらの特
性はDLC膜の膜密度と密接な関係を持ち、膜密度とい
うマクロ的なパラメータにより制御が可能であることを
知見した。そこで、炭素層を形成する過程で、膜密度に
所定差を付けて、摩擦係数の低減による摺動性に寄与す
る低密度炭素層と、耐摩耗性が高いことで摩擦耐久性の
向上に寄与する高密度炭素層とを所定条件の下で連続的
に交互に多層化して形成させることによって、両特性を
満足するDLC膜を得ることに成功した。以下、必要と
される膜密度についてさらに説明する。From the above description, it is essentially impossible to simultaneously achieve wear resistance and a low coefficient of friction as long as a single material is used even with a DLC film. On the other hand, the present inventor has conducted intensive studies on the mechanical properties of the DLC film and the abrasion resistance and sliding sliding properties correlated therewith. As a result, these properties have a close relationship with the film density of the DLC film, and are referred to as film density. It was found that control was possible with macro parameters. Therefore, in the process of forming the carbon layer, a certain difference is given to the film density, which contributes to the slidability by reducing the friction coefficient, and the high wear resistance contributes to the improvement of the friction durability. By continuously forming the high-density carbon layer into a multilayer under predetermined conditions, a DLC film satisfying both characteristics was successfully obtained. Hereinafter, the required film density will be further described.
【0014】前記低密度炭素層4のDLCの平均の膜密
度は、2.2g/cm3以下とし、好ましくは2.0g/cm3
以下とするのがよい。平均膜密度を2.2g/cm3以下と
することで、弾性定数が200GPaより小さく、さら
に膜硬度も30GPaより小さくなり、摩擦面でのせん
断応力に対して変形し易く、摩擦係数を小さくすること
ができる。一方、前記高密度炭素層の平均の膜密度は
2.3g/cm3以上、好ましくは2.5g/cm3以上とする
のがよい。平均膜密度を2.3g/cm3以上とすることに
より、弾性定数が300GPaより大きく、さらに膜硬
度も50GPaより大きくなり、十分な耐摩耗性を備え
るようになる。もっとも、膜密度が高くなり過ぎると、
膜の固有応力も過大となり、使用時の負荷応力による変
形能が低下し、剥離や膜破壊などの問題が生じるように
なるので、3.2g/cm3以下、好ましくは3.0g/cm3
以下、より好ましくは2.7g/cm3以下に止めるのがよ
い。The average film density of DLC of the low density carbon layer 4 is 2.2 g / cm 3 or less, preferably 2.0 g / cm 3.
It is better to do the following. By setting the average film density to 2.2 g / cm 3 or less, the elastic constant is smaller than 200 GPa, the film hardness is smaller than 30 GPa, and the film is easily deformed by shear stress on the friction surface, and the friction coefficient is reduced. be able to. On the other hand, the average film density of the high-density carbon layer is 2.3 g / cm 3 or more, preferably 2.5 g / cm 3 or more. By setting the average film density to 2.3 g / cm 3 or more, the elastic constant becomes larger than 300 GPa, the film hardness becomes larger than 50 GPa, and sufficient abrasion resistance is provided. However, if the film density becomes too high,
Intrinsic stress of film becomes excessive, reduces the deformability due to load stress at the time of use, since such problems such as peeling and film breakdown occurs, 3.2 g / cm 3 or less, preferably 3.0 g / cm 3
It is better to keep the amount below 2.7 g / cm 3 , more preferably.
【0015】前記膜密度は炭素層における平均値を意味
するものであり、炭素層の厚さ方向における密度分布の
形態を問わない。例えば、図2に示すように、各炭素層
における膜密度が一定の形態(A)に限らず、膜密度が
層内で厚さ方向に傾斜状に変化する形態(B)または
(C)をとってもよい。なお、膜密度は、ラザフォード
バックスキャッタリング(RBS)法やX線反射率法、
もしくはSink-Float法(ASTMD729)やDensity
Gradient Column法(ASTMD1505)などによっ
て測定することができる。The above-mentioned film density means an average value in the carbon layer, regardless of the form of the density distribution in the thickness direction of the carbon layer. For example, as shown in FIG. 2, not only the form (A) in which the film density in each carbon layer is constant, but also the form (B) or (C) in which the film density changes in the layer in a tilted manner in the thickness direction. You may take it. In addition, the film density is measured by Rutherford back scattering (RBS) method, X-ray reflectivity method,
Or Sink-Float method (ASTMD729) or Density
It can be measured by the Gradient Column method (ASTMD1505) or the like.
【0016】前記高密度炭素層5における水素含有量は
少ない程良く、5at%以下に止めることが望ましい。不
純物である水素を5at%以下に抑制することによって、
高膜密度下における膜硬度、弾性定数を容易に高めるこ
とができ、耐摩耗性をより向上させることができる。炭
素層の膜密度とその中に含まれる水素との関係について
は、Scheibeらが報告(IEEE Tran. On Plasma Sci., vo
l 25(1997),p685)しているように、DLCの膜密度は
弾性定数Eおよび膜硬度Hに密接に相関することが知ら
れている。すなわち、膜密度が高いとEおよびHがとも
に大きくなり、膜密度が低いとEおよびHがともに低く
なる。これはDLCに含まれる不純物元素によって増減
率が異なるが、特に水素が5at%より少なく含まれる場
合、その相関度が大きくなり、高膜密度の下ではEおよ
びHがともに大きな値をとるため、塑性指数が小さくな
って耐摩耗性をより向上させることができる。The hydrogen content in the high-density carbon layer 5 is preferably as small as possible, and it is desirable to keep the hydrogen content at 5 at% or less. By controlling the impurity hydrogen to 5 at% or less,
The film hardness and elastic constant under a high film density can be easily increased, and the wear resistance can be further improved. Scheibe et al. Reported the relationship between the film density of the carbon layer and the hydrogen contained therein (IEEE Tran. On Plasma Sci., Vo
It is known that the DLC film density is closely correlated with the elastic constant E and the film hardness H, as described in I.25 (1997), p685). That is, when the film density is high, both E and H increase, and when the film density is low, both E and H decrease. This is because the rate of increase / decrease differs depending on the impurity element contained in the DLC. In particular, when hydrogen is contained at less than 5 at%, the degree of correlation increases, and both E and H take large values under a high film density. The plasticity index is reduced, and the wear resistance can be further improved.
【0017】前記低密度炭素層4の層厚は、0.4nm
以上、30nm以下とすることが好ましく、前記高密度
炭素層5の層厚は0.4nm以上、10nm以下とする
ことが好ましい。低密度炭素層4、高密度炭素層5が各
々0.4nm未満では各層がその特性を維持することが
困難になる。また、低密度炭素層4が30nm超では、
この層はせん断応力に対する抵抗が低いため、摩擦によ
る消耗量が増大し、トラブルの原因となる。一方、高密
度炭素層5が10nm超では、摩擦面や摺動面に露出し
た部分において、この層での摩擦が全体の摺動特性に影
響するようになり、またこの層はせん断応力に対する抵
抗性が大きいために、摩擦係数が増大するようになる。The low-density carbon layer 4 has a thickness of 0.4 nm.
As described above, the thickness is preferably 30 nm or less, and the layer thickness of the high-density carbon layer 5 is preferably 0.4 nm or more and 10 nm or less. If each of the low-density carbon layer 4 and the high-density carbon layer 5 is less than 0.4 nm, it becomes difficult for each layer to maintain its characteristics. When the low-density carbon layer 4 exceeds 30 nm,
Since this layer has low resistance to shear stress, the amount of wear due to friction increases, which causes trouble. On the other hand, when the high-density carbon layer 5 exceeds 10 nm, the friction in this layer affects the overall sliding characteristics in the portion exposed on the friction surface and the sliding surface, and this layer has a resistance to shear stress. Due to the high performance, the coefficient of friction increases.
【0018】また、前記低密度炭素層4の層厚をT1、
前記高密度炭素層5の層厚をT2としたとき、層厚比T
1/T2を5〜0.2とすることが望ましい。層厚比の
決定に際しては、低密度炭素層4は厚すぎず、高密度炭
素層5は薄すぎず、コーティング膜全体の摩擦のせん断
応力に対する抵抗力がバランスするようにすることが必
要である。層厚比T1/T2が5超となり、低密度炭素
層4が高密度炭素層5に比して著しく厚くなると、低密
度炭素層4は摩擦に対する抵抗力が小さいために変形量
が大きくなり、また高密度炭素層5が相対的に薄くなる
ことと相まって、耐摩耗性の低下を招く。一方、比T1
/T2が0.2未満となり、高密度炭素層5が低密度炭
素層4に比して著しく厚くなると、摩擦に対する変形量
が小さくなり、摩擦係数の上昇をまねく。The thickness of the low-density carbon layer 4 is T1,
When the layer thickness of the high-density carbon layer 5 is T2, the layer thickness ratio T
It is desirable that 1 / T2 be 5 to 0.2. In determining the layer thickness ratio, it is necessary that the low-density carbon layer 4 is not too thick and the high-density carbon layer 5 is not too thin, so that the resistance of the entire coating film to the shear stress of friction is balanced. . When the layer thickness ratio T1 / T2 exceeds 5, and the low-density carbon layer 4 is significantly thicker than the high-density carbon layer 5, the low-density carbon layer 4 has a small amount of deformation due to low frictional resistance, In addition, the high-density carbon layer 5 is relatively thin, which causes a decrease in wear resistance. On the other hand, the ratio T1
If / T2 is less than 0.2 and the high-density carbon layer 5 is significantly thicker than the low-density carbon layer 4, the amount of deformation with respect to friction decreases, leading to an increase in the coefficient of friction.
【0019】また、前記最外層6は必ずしも必要とされ
るものではないが、最外層6として低密度炭素層を設け
ることにより、摺動初期における表面の変形が容易にな
り、さらに相手材への炭素原子の付着を促進することが
でき、特に摺動試験初期において摩擦係数の低減を実現
することができる。もっとも、最外層6の厚さが2nm
未満では前記作用が過少であり、一方200nmを超え
ると摩擦による消耗量が増大し、摺動部分での摩耗粉の
発生により、摩擦が滑らかに起こらないようになり、す
なわち摩擦係数が不安定になり、さらに摩擦量が増加す
るなどのトラブルの原因となるので、最外層6の厚さは
2〜200nmとするのがよい。Although the outermost layer 6 is not always required, by providing a low-density carbon layer as the outermost layer 6, the surface can be easily deformed in the initial stage of sliding, and furthermore, the outermost layer 6 can be used as a mating material. The adhesion of carbon atoms can be promoted, and a reduction in the coefficient of friction can be realized, especially at the beginning of the sliding test. However, the thickness of the outermost layer 6 is 2 nm.
If it is less than 200 nm, the effect is too small.On the other hand, if it exceeds 200 nm, the amount of wear due to friction increases, and the generation of wear powder in the sliding portion prevents the friction from occurring smoothly, that is, the friction coefficient becomes unstable. Therefore, the thickness of the outermost layer 6 is preferably set to 2 to 200 nm, because it causes troubles such as an increase in the amount of friction.
【0020】また、低密度炭素層4と高密度炭素層5と
の1組の層さ方向の繰り返し周期は30nm以下、好ま
しくは10nm以下にすることが望ましい。積層膜を3
0nm以下の超薄膜とすることにより、両層の特性が効
率的に摺動面での摩擦現象に対して発揮され、優れた耐
摩耗性と低い摩擦係数を安定的に実現することができ
る。また、最外層6を設ける場合、最外層6より内側の
積層部7の厚さを最外層6より少なくとも500nm以
上とすることが好ましい。なお、最外層6を積層部7に
おける低密度炭素層4の層厚よりも厚く形成する場合、
前記T1、T2、T1/T2、繰り返し周期の数値につ
いては積層部7における低密度炭素層4、高密度炭素層
5についての推奨値を意味する。It is desirable that the repetition period of one set of the low-density carbon layer 4 and the high-density carbon layer 5 in the layer direction is 30 nm or less, preferably 10 nm or less. 3 laminated films
By using an ultrathin film having a thickness of 0 nm or less, the characteristics of both layers can be efficiently exhibited against the friction phenomenon on the sliding surface, and excellent wear resistance and a low friction coefficient can be stably realized. When the outermost layer 6 is provided, it is preferable that the thickness of the laminated portion 7 inside the outermost layer 6 be at least 500 nm or more than the outermost layer 6. When the outermost layer 6 is formed to be thicker than the low-density carbon layer 4 in the laminated portion 7,
The numerical values of T1, T2, T1 / T2, and the repetition period mean recommended values for the low-density carbon layer 4 and the high-density carbon layer 5 in the laminated portion 7.
【0021】前記多層膜3を積層形成する基材1として
は、超硬合金、鉄系合金、チタン系合金、アルミ系合
金、銅系合金、ガラス,アルミナなどのセラミックス、
Si、樹脂材料等の適宜の金属材、非金属材を用いるこ
とができる。また、前記基材1と多層膜3との間に設け
られる中間層2は、基材1と多層膜3との密着性を確保
する役目をなすものであり、かかる作用を有するタング
ステン等の金属や、例えば特開平10−29718号公
報に記載された金属と炭素の混合物、あるいは基材の保
護等のための金属もしくは半金属の炭化物、または金属
もしくは半金属の窒化物、または金属もしくは半金属の
炭窒化物を用いることができる。なお、中間層2は単層
に限らず、複層とすることもできる。As the substrate 1 on which the multilayer film 3 is formed, ceramics such as cemented carbide, iron alloy, titanium alloy, aluminum alloy, copper alloy, glass, alumina, etc.
An appropriate metal material such as Si or a resin material, or a nonmetal material can be used. The intermediate layer 2 provided between the base material 1 and the multilayer film 3 serves to ensure the adhesion between the base material 1 and the multilayer film 3, and has a metal such as tungsten having such an effect. Or a mixture of metal and carbon described in, for example, JP-A-10-29718, a metal or metalloid carbide for protecting a substrate, or a metal or metalloid nitride, or a metal or metalloid Can be used. The intermediate layer 2 is not limited to a single layer, but may be a multilayer.
【0022】本発明の多層膜の形成方法には特に制限は
ないが、固体炭素を蒸発源(ターゲット)として、スバ
ッタリングにより形成する方法は、ナノメートル(n
m)オーダーでの層厚や膜密度の制御を容易に行うこと
ができるので好ましい。また、炭素膜中の水素を低減さ
せるという観点からも、成膜原料ガスとしてメタン等の
炭化水素ガスを用いて炭素膜を成膜する手法は不適当で
あり、固体炭素をターゲットとするスパッタリングが好
ましい。The method for forming the multilayer film of the present invention is not particularly limited. However, the method for forming the multilayer film by sputtering using solid carbon as an evaporation source (target) is nanometer (n).
m) It is preferable because the layer thickness and the film density can be easily controlled on the order. Also, from the viewpoint of reducing hydrogen in the carbon film, a method of forming a carbon film using a hydrocarbon gas such as methane as a film forming source gas is inappropriate, and sputtering using solid carbon as a target is not appropriate. preferable.
【0023】低密度炭素層4を形成する場合は特に基板
に負のバイアス電圧を印加する必要はないが、高密度炭
素層5を形成する場合は負のバイアス電圧を印加するこ
とが好ましい。すなわち、基板に負の直流電圧、直流パ
ルス電圧もしくは高周波バイアス電圧を印加し、その印
加電圧により成膜時に膜の堆積と同時にイオンを照射す
るようにして、イオン打ち込み効果で膜密度を上げるよ
うに制御することが好ましい。一般に通常のスパッタリ
ングでは、バイアス電圧の印加による手法では膜密度が
2.6g/cm3を超える硬質炭素膜を形成することは難し
いが、誘導結合プラズマ(IPC)法や高周波プラズマ
(rf)法をスバッタリングに付加したり、もしくはア
ークイオンプレーティングやレーザーアプレーション等
を付加することによって、炭素のイオン化率を高めるこ
とでスパッタリングによっても2.6g/cm3を超える硬
質炭素膜を容易に形成することができる。When the low density carbon layer 4 is formed, it is not necessary to apply a negative bias voltage to the substrate, but when the high density carbon layer 5 is formed, it is preferable to apply a negative bias voltage. That is, a negative DC voltage, a DC pulse voltage or a high-frequency bias voltage is applied to the substrate, and the applied voltage irradiates the ions simultaneously with the deposition of the film at the time of film formation, thereby increasing the film density by the ion implantation effect. It is preferable to control. In general, it is difficult to form a hard carbon film having a film density of more than 2.6 g / cm 3 by a method of applying a bias voltage in the ordinary sputtering, but an inductively coupled plasma (IPC) method or a high-frequency plasma (rf) method is used. Hard carbon film exceeding 2.6 g / cm 3 can be easily formed by sputtering by increasing the ionization rate of carbon by adding it to sputtering or adding arc ion plating or laser ablation. can do.
【0024】ところで、既述の通り、前記特開平10−
226874号公報には電気抵抗率が少なくとも2桁相
違する2種類の硬質炭素膜が交互に積層されたDLC膜
が記載されているが、本質的に電気抵抗率と膜密度とは
関係がない。また、同公報に記載された実施例1,2お
よび4のように炭化水素ガスを原料ガスとして成膜する
と、例え密度が高くなっても、水素を多量に含み、弾性
率Eや硬度Hが高くならず、耐摩耗性を向上させること
ができない。また、実施例3のようにカソードアークイ
オンプレーティング法では基板電圧を600Vから60
Vに変化させても2.1g/cm3以下の低密度膜を成膜す
ることはできないものと推測される。また、前記特開平
10−72288号公報には薄膜状炭素層と微粒子状炭
素層とを交互に積層されたDLC膜が記載されている
が、本発明では粒子状炭素層は必須ではなく、またこれ
らの炭素層は炭化水素ガスを成膜用原料ガスとして用い
ることが記載されており、前記と同様、かかる炭化水素
ガスを原料ガスとして成膜する限り、本発明にかかる耐
摩耗性の良好な高密度炭素層を形成することは困難であ
る。また、特開平9−298097号公報には導電性膜
とそれより硬度の高い絶縁性膜とを交互に積層したDL
C膜が記載されているが、前記絶縁性膜はソースガスと
してメタンガスを用いて成膜するものであり、上記の通
り、かかる炭化水素ガスをソースガスとして用いる限
り、本発明にかかる耐摩耗性の良好な高密度炭素層を形
成することは困難である。By the way, as mentioned above,
Japanese Patent No. 226874 describes a DLC film in which two types of hard carbon films having electric resistivity different by at least two digits are alternately laminated, but there is essentially no relation between electric resistivity and film density. Further, when a film is formed using a hydrocarbon gas as a raw material gas as in Examples 1, 2 and 4 described in the same publication, even if the density is high, a large amount of hydrogen is contained, and the elastic modulus E and the hardness H are low. Therefore, the wear resistance cannot be improved. In the cathode arc ion plating method as in Example 3, the substrate voltage was increased from 600 V to 60 V.
It is presumed that a low-density film of 2.1 g / cm 3 or less cannot be formed even if V is changed to V. Further, in the above-mentioned Japanese Patent Application Laid-Open No. 10-72288, a DLC film in which a thin-film carbon layer and a fine-particle carbon layer are alternately laminated is described, but the particulate carbon layer is not essential in the present invention, and It is described that these carbon layers use a hydrocarbon gas as a source gas for film formation, and as described above, as long as the hydrocarbon gas is used as a source gas to form a film, the wear resistance according to the present invention is excellent. It is difficult to form a high density carbon layer. JP-A-9-298097 discloses a DL in which a conductive film and an insulating film having a higher hardness are alternately laminated.
Although the C film is described, the insulating film is formed by using methane gas as a source gas. As described above, as long as such a hydrocarbon gas is used as a source gas, the abrasion resistance according to the present invention is reduced. It is difficult to form a high-density carbon layer having a good quality.
【0025】次に実施例を挙げて本発明をより具体的に
説明するが、本発明は下記実施例によって制限的に解釈
されるものではない。Next, the present invention will be described more specifically with reference to examples, but the present invention is not construed as being limited by the following examples.
【0026】[0026]
【実施例】まず、摩擦係数・耐摩耗性測定用として直径
50mm、厚さ約8mmのSKH(高速度鋼)基材、膜
密度・膜中水素量測定用として2インチ径、厚さ約20
0μm のSiウエハー基材を準備した。これら基材を成
膜前処理としてアセトンにて脱脂し、20分間超音波洗
浄した後、圧縮空気を噴射して十分に乾燥させた。こう
した処理を施した基材を、スパッタチャンバー内にセッ
トして、3×10-6torr以下に真空引きした。その後、
動作ガスとしてArガスを3 mtorr圧までチャンバー内
に導入し、高周波電源を印加してArプラズマを生成さ
せ、Arイオンによる基材表面のスバッタエッチングを
rfパワー200Wにて5分間実施した。EXAMPLE First, a SKH (high-speed steel) substrate having a diameter of 50 mm and a thickness of about 8 mm for measuring the coefficient of friction and abrasion resistance, and a diameter of about 2 inches and a thickness of about 20 for measuring the film density and the amount of hydrogen in the film.
A 0 μm Si wafer substrate was prepared. These substrates were degreased with acetone as a pretreatment for film formation, ultrasonically cleaned for 20 minutes, and then sufficiently dried by spraying compressed air. The substrate subjected to such a treatment was set in a sputtering chamber and evacuated to 3 × 10 −6 torr or less. afterwards,
Ar gas as an operating gas was introduced into the chamber to a pressure of 3 mtorr, a high-frequency power source was applied to generate Ar plasma, and sputter etching of the substrate surface with Ar ions was performed at a rf power of 200 W for 5 minutes.
【0027】摩擦係数・耐摩耗性測定用試料として、前
記SKH基材の表面に下記の要領にて図1に示す多層膜
あるいは単層膜をコーティングした。多層膜の場合、最
外層6を低密度炭素層で形成するようにした。最外層を
除く積層部7を構成する低密度炭素層4の層厚T1、高
密度炭素層5の層厚T2、層厚比T1/T2、積層数お
よび最外層6の層厚を表1に示す。表1には層4と層5
とを一組とする積層周期、積層数も併記した。 (1) 試料No. 23以外 SKH基材に対して、まず第1中間層としてWメタル層
を厚さ約50nmで形成し、さらに回転成膜により第2
中間層としてW−炭素混合非晶質層を厚さ約200nm
形成した。さらにその上に低密度炭素層4および高密度
炭素層5を交互に形成し、最後に最外層6を成膜した。 (2) 試料No. 23 SKH基材の上に、まずアークイオンプレーティング成
膜装置にて下地中間層としてTiAlN層を1μm 形成
し、その上にスバッタリング法にて第1中間層のTiメ
タル層を厚さ約50nm形成し、さらに回転成膜により
第2中間層であるTi−炭素混合非晶質層を厚さ約20
0nmで形成した。さらにその上に低密度炭素層4およ
び高密度炭素層5を交互に形成し、最後に最外層6を成
膜した。As a sample for measuring a coefficient of friction and abrasion resistance, the surface of the SKH substrate was coated with a multilayer film or a single layer film shown in FIG. 1 in the following manner. In the case of a multilayer film, the outermost layer 6 is formed of a low density carbon layer. Table 1 shows the layer thickness T1 of the low-density carbon layer 4, the layer thickness T2 of the high-density carbon layer 5, the layer thickness ratio T1 / T2, the number of layers, and the layer thickness of the outermost layer 6, which constitute the laminated portion 7 excluding the outermost layer. Show. Table 1 shows layers 4 and 5
And the lamination cycle and the number of laminations as one set. (1) Except for sample No. 23 On the SKH base material, first, a W metal layer was formed to a thickness of about 50 nm as a first intermediate layer, and then a second intermediate layer was formed by spin deposition.
A 200-nm thick W-carbon mixed amorphous layer as an intermediate layer
Formed. Further, a low-density carbon layer 4 and a high-density carbon layer 5 were alternately formed thereon, and finally an outermost layer 6 was formed. (2) On a sample No. 23 SKH base material, first, a TiAlN layer was formed as a base intermediate layer to a thickness of 1 μm by an arc ion plating film forming apparatus, and a Ti layer of a first intermediate layer was formed thereon by sputtering. A metal layer is formed to a thickness of about 50 nm, and a Ti—carbon mixed amorphous layer as a second intermediate layer is formed to a thickness of about 20 nm by spin film formation.
It was formed at 0 nm. Further, a low-density carbon layer 4 and a high-density carbon layer 5 were alternately formed thereon, and finally an outermost layer 6 was formed.
【0028】前記中間層、低密度炭素層、高密度炭素層
および最外層はいずれも島津製作所製HSM−752ス
パッタリングシステムによるdcマグネトロンスパッタ
リングにより行った。共通する成膜条件として、ターゲ
ット/基材間距離は55mm、基材温度は室温、金属タ
ーゲットに対しては通常のカソード構造(以下CMと略
す。)を用い、カーボンターゲットにはUBM(アンバ
ランスドマグネトロン)カソード構造を用いて成膜し
た。成膜パワーは第1中間層が500W、第2中間層で
は金属ターゲットについてパワーを500Wから0Wに
滑らかに減少させた。また、カーボンターゲットにおい
てはパワーを0Wから1kWに滑らかに増加させて、組
成が連続的に変化する傾斜層を設けた。低密度炭素層4
(最外層6を含む。)の形成においては基材にはバイア
ス電圧を印加することなく、一方高密度炭素層5の形成
においては所定のdcバイアス電圧を印加した。さら
に、No. 16〜18および34では高密度炭素層の成膜
時に結合誘導プラズマを付加して積層部の成膜を実施し
た。また、No. 20〜22では、低密度炭素層4につい
て水素化の悪影響がないことを確かめるため、低密度炭
素層4の成膜時のみメタンガスをチャンバー内に導入
し、Arガスに対するメタンガスの分圧を5〜20%と
して低密度炭素層4を水素化した。The intermediate layer, the low-density carbon layer, the high-density carbon layer and the outermost layer were all formed by dc magnetron sputtering using a HSM-752 sputtering system manufactured by Shimadzu Corporation. As common film forming conditions, a target / substrate distance is 55 mm, a substrate temperature is room temperature, a normal cathode structure (hereinafter abbreviated as CM) is used for a metal target, and an UBM (unbalanced) is used for a carbon target. (Demagnetron) cathode structure. The film forming power was 500 W for the first intermediate layer, and the power for the metal target was smoothly reduced from 500 W to 0 W for the second intermediate layer. In the carbon target, the power was smoothly increased from 0 W to 1 kW to provide a gradient layer whose composition continuously changed. Low density carbon layer 4
(Including the outermost layer 6), no bias voltage was applied to the substrate, while a predetermined dc bias voltage was applied to the formation of the high-density carbon layer 5. Further, in Nos. 16 to 18 and 34, the deposition of the laminated portion was performed by adding the coupling induction plasma during the deposition of the high-density carbon layer. In Nos. 20 to 22, methane gas was introduced into the chamber only during the formation of the low-density carbon layer 4 in order to confirm that there was no adverse effect of hydrogenation on the low-density carbon layer 4, and the amount of methane gas relative to Ar gas was reduced. The low density carbon layer 4 was hydrogenated at a pressure of 5 to 20%.
【0029】一方、膜密度・膜中水素量測定用試料とし
て、Siウエハー基材に中間層を形成することなく、前
記多層膜の各層を成膜する際と同条件により、単層の低
密度炭素層あるいは高密度炭素層を成膜した。On the other hand, as a sample for measuring the film density and the amount of hydrogen in the film, a single-layer low-density film was formed under the same conditions as when forming each layer of the multilayer film without forming an intermediate layer on the Si wafer substrate. A carbon layer or a high-density carbon layer was formed.
【0030】[0030]
【表1】 [Table 1]
【0031】作製された試料について、下記の方法によ
って、摩擦係数、耐摩耗性並びに膜密度および水素含有
量を測定評価した。 (1) 摩擦係数 HEIDON式往復摺動試験機を用いて摩擦係数を測定
した。このとき試料はステージに固定し、直径約8mm
のSUJ2製鋼球を用いて試料表面に負荷4.9N、摺
動速度20mm/sec 、摺動幅10mmで摺動試験をお
こない、積算摺動距離0〜5m、50〜150m、15
0〜200mでの平均摩擦係数と、積層摺動距離が1k
mに達した時の摩擦係数を測定した。試験環境は大気中
で、気温20〜26℃、湿度40〜80%に制御した。 (2) 耐摩耗性 上記HEIDON式往復摺動試験の後、摺動痕の部分の
深さを触針式の表面粗さ計にて測定し、摩耗した体積を
測定し、摺動距離と荷重に対する比摩耗量を計算し、耐
摩耗性を評価した。 (3) 膜密度および水素含有量 Siウエハー基材に成膜した単層の低密度炭素層あるい
は高密度炭素層に対してラザフォードバックスキャッタ
リング(RBS)法によって膜密度および層中の水素含
有量を測定した。上記測定結果を表2に示す。同表には
水素含有量については示されていないが、低密度炭素層
の水素含有量はNo. 20が6at%、No. 21および22
が各々10at%、他の試料は1at%未満であった。高密
度炭素層についても1at%未満であった。The prepared samples were measured and evaluated for the coefficient of friction, wear resistance, film density and hydrogen content by the following methods. (1) Friction coefficient The friction coefficient was measured using a HEIDON reciprocating sliding tester. At this time, the sample was fixed on the stage and the diameter was about 8 mm.
Using a SUJ2 steel ball, a sliding test was performed on the sample surface with a load of 4.9 N, a sliding speed of 20 mm / sec, and a sliding width of 10 mm, and an integrated sliding distance of 0 to 5 m, 50 to 150 m, 15
Average friction coefficient at 0-200m and lamination sliding distance is 1k
The coefficient of friction when m was reached was measured. The test environment was controlled in the atmosphere at a temperature of 20 to 26 ° C. and a humidity of 40 to 80%. (2) Abrasion resistance After the HEIDON type reciprocating sliding test, the depth of the sliding mark was measured with a stylus type surface roughness meter, the worn volume was measured, and the sliding distance and load were measured. Was calculated and the wear resistance was evaluated. (3) Film density and hydrogen content Film density and hydrogen content in a single layer of low-density carbon layer or high-density carbon layer formed on a Si wafer substrate by Rutherford back scattering (RBS) method Was measured. Table 2 shows the measurement results. Although the hydrogen content is not shown in the table, the hydrogen content of the low-density carbon layer was 6 at% for No. 20 and 21 and 22 for No. 20.
Was less than 10 at%, and the other samples were less than 1 at%. The density of the high-density carbon layer was also less than 1 at%.
【0032】[0032]
【表2】 [Table 2]
【0033】表2より、発明例のDLC硬質多層膜(N
o. 1〜26)によれば、摺動初期の摩擦係数はやや高
いものの、その後は安定的に0.15以下の摩擦係数が
得られ、耐摩耗性にも優れており、相手材への攻撃性も
非常に小さいことがわかる。もっとも、No. 26のよう
に、最外層が300nmと厚過ぎると、摩耗量が増大
し、摩擦係数が不安定になる。As shown in Table 2, the DLC hard multilayer film (N
According to o. 1-26), although the coefficient of friction at the initial stage of sliding is slightly high, a coefficient of friction of 0.15 or less can be obtained stably thereafter, and it has excellent abrasion resistance. It can be seen that the aggression is also very small. However, when the outermost layer is too thick, such as No. 26, having a thickness of 300 nm, the amount of wear increases and the friction coefficient becomes unstable.
【0034】一方、高密度炭素層のみの単層膜(No. 3
1)あるいは低密度単層膜のみの単層膜(No. 32)で
は、摺動初期の摩擦係数が0.2を越えたり、摺動距離
が増えるに伴い摩擦係数が上昇するなどの問題があり、
また比摩耗量が大きく、耐久性に問題が生じることがわ
かる。また、DLC多層膜であっても、No. 33〜40
のように各硬質炭素層の平均膜密度、層厚、層厚比、最
外層の層厚が発明条件外となると、安定的に0.15以
下の良好な摩擦係数が得られなかったり、耐摩耗性が不
足し、高耐摩耗性と高摺動性の両立に欠ける多層膜とな
ることがわかる。On the other hand, a single-layer film having only a high-density carbon layer (No. 3)
In the case of 1) or a single-layer film composed of only a low-density single-layer film (No. 32), problems such as the friction coefficient at the initial stage of sliding exceeding 0.2 and the increase of the friction coefficient as the sliding distance is increased. Yes,
Further, it can be seen that the specific wear amount is large and a problem occurs in durability. Further, even in the case of a DLC multilayer film, No. 33-40
When the average film density, the layer thickness, the layer thickness ratio, and the layer thickness of the outermost layer of each hard carbon layer are out of the range of the invention as described above, a good friction coefficient of 0.15 or less cannot be obtained stably, It can be seen that the abrasion is insufficient and the resulting multilayer film lacks both high abrasion resistance and high slidability.
【0035】[0035]
【発明の効果】本発明のDLC硬質多層膜は、0.1〜
0.15程度の低摩擦係数が安定的に得られ、かつ耐摩
耗性に優れ、しかも相手材への攻撃性も小さいため、各
種摺動部材、特に自動車部品、工具、機械部品等の保護
膜や、カードやチケットの自動読取機やプリンターなど
の磁気ヘッドの保護膜などに好適に利用することができ
る。The DLC hard multilayer film of the present invention has a thickness of 0.1 to
Since a low friction coefficient of about 0.15 can be stably obtained, the wear resistance is excellent, and the aggressiveness to the counterpart material is small, so that a protective film for various sliding members, particularly automobile parts, tools, machine parts, etc. Also, it can be suitably used for a protective film of a magnetic head such as an automatic reader of a card or a ticket or a printer.
【図1】本発明の実施形態にかかるDLC多層膜を備え
た部材の要部断面を示す模式図である。FIG. 1 is a schematic diagram illustrating a cross section of a main part of a member including a DLC multilayer film according to an embodiment of the present invention.
【図2】平均膜密度の意味を明らかにするための厚さ方
向の密度分布形態を示す図である。FIG. 2 is a diagram illustrating a density distribution form in a thickness direction for clarifying the meaning of an average film density.
1 基材 2 中間層 3 多層膜 4 低密度炭素層 5 高密度炭素層 6 最外層 7 積層部 DESCRIPTION OF SYMBOLS 1 Base material 2 Intermediate layer 3 Multilayer film 4 Low density carbon layer 5 High density carbon layer 6 Outermost layer 7 Lamination part
Claims (2)
ンで形成された低密度炭素層と、膜密度の高いダイヤモ
ンドライクカーボンで形成された高密度炭素層とが交互
に積層されたダイヤモンドライクカーボン多層膜であっ
て、 前記低密度炭素層は平均の膜密度が2.2g/cm3以下で
あり、一方前記高密度炭素層は平均の膜密度が2.3〜
3.2g/cm3であり、前記高密度炭素層は膜中に含まれ
る水素成分が5at%以下であり、前記低密度炭素層の層
厚が0.4〜30nmであり、前記高密度炭素層の層厚
が0.4〜10nmであり、前記低密度炭素層の層厚T
1と高密度炭素層の層厚T2の比T1/T2が5〜0.
2である、ダイヤモンドライクカーボン多層膜。A diamond-like carbon multilayer film in which a low-density carbon layer formed of diamond-like carbon having a low film density and a high-density carbon layer formed of diamond-like carbon having a high film density are alternately laminated. The low-density carbon layer has an average film density of 2.2 g / cm 3 or less, while the high-density carbon layer has an average film density of 2.3 to
3.2 g / cm 3 , the high-density carbon layer has a hydrogen content of 5 at% or less in the film, the low-density carbon layer has a thickness of 0.4 to 30 nm, The layer thickness of the low density carbon layer is 0.4 to 10 nm;
1 and the thickness T2 of the high-density carbon layer, T1 / T2, is 5 to 0.5.
2, a diamond-like carbon multilayer film.
その層厚が2〜200nmである請求項1に記載のダイ
ヤモンドライクカーボン多層膜。2. An outermost layer is formed of the low density carbon layer,
The diamond-like carbon multilayer film according to claim 1, wherein the layer thickness is 2 to 200 nm.
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