JP2002319762A - Multilayer wiring board - Google Patents
Multilayer wiring boardInfo
- Publication number
- JP2002319762A JP2002319762A JP2001122633A JP2001122633A JP2002319762A JP 2002319762 A JP2002319762 A JP 2002319762A JP 2001122633 A JP2001122633 A JP 2001122633A JP 2001122633 A JP2001122633 A JP 2001122633A JP 2002319762 A JP2002319762 A JP 2002319762A
- Authority
- JP
- Japan
- Prior art keywords
- pad
- wiring board
- multilayer wiring
- layer
- via hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10W70/655—
-
- H10W72/07251—
-
- H10W72/20—
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、絶縁層と導体層が
交互に積層してなる多層構造を有する多層配線基板に関
し、特に、半導体素子搭載用インターポーザに用いら
れ、微小径ビアホールを有する多層配線基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board having a multilayer structure in which insulating layers and conductor layers are alternately stacked, and more particularly to a multilayer wiring board used for an interposer for mounting a semiconductor element and having a small diameter via hole. Regarding the substrate.
【0002】[0002]
【従来の技術】近年、半導体大規模集積回路(LSI)
等の半導体素子ではトランジスターの集積度が高まり、
その動作速度はクロック周波数で1GHzに達するもの
が、また、入出力端子数では1000を越えるものが出
現するに至っている。2. Description of the Related Art Recently, semiconductor large-scale integrated circuits (LSIs)
In semiconductor devices such as, the degree of integration of transistors increases,
The operation speed reaches 1 GHz in clock frequency, and the number of input / output terminals exceeds 1000.
【0003】このような半導体素子をプリント配線基板
に実装するために、BGA(Ball Grid Ar
ray)やCSP(Chip Size Packag
e)等のインターポーザが開発され、現在では広く実用
化されている。図4はBGA構造のインターポーザに半
導体素子を搭載し、プリント配線基板へ実装した一例を
示したものである。In order to mount such a semiconductor element on a printed wiring board, a BGA (Ball Grid Ar) is used.
ray) and CSP (Chip Size Package)
e) and other interposers have been developed and are now widely used. FIG. 4 shows an example in which a semiconductor element is mounted on an interposer having a BGA structure and mounted on a printed wiring board.
【0004】ガラス布にエポキシ樹脂等を含浸した銅貼
基板やセラミック基板47aをベースに、絶縁層、導体
層を交互に積層した多層配線基板47の片側表面に金等
でバンプ43が形成され、半導体素子41の電極と電気
接続が取られている。また、反対表面には金等で表面処
理されたパッド44が形成され、半田ボール46を介し
てプリント配線基板51の導体層45と接続されてい
る。A bump 43 is formed of gold or the like on one surface of a multilayer wiring board 47 in which insulating layers and conductor layers are alternately laminated based on a copper-clad board or a ceramic board 47a in which glass cloth is impregnated with an epoxy resin or the like. The electrical connection with the electrode of the semiconductor element 41 is established. A pad 44 surface-treated with gold or the like is formed on the opposite surface, and is connected to a conductor layer 45 of a printed wiring board 51 via a solder ball 46.
【0005】このような多層配線基板は銅貼り基板やセ
ラミック基板上に絶縁層と導体層を逐次積み上げて形成
される。この工法にて作製された多層配線基板の絶縁層
は、ポリイミド等の樹脂を塗布することにより形成し、
薄膜化することができる。また、導体層はめっきで形成
でき、微細配線が可能となる。一方、上下の導体層を接
続するビアホールはレーザ加工等にて孔を形成し、内部
をめっきで埋めることにより形成できる。このため、従
来の銅貼り基板を一括積層する多層プリント配線基板、
あるいは、グリーンシートを積層して一括焼成するセラ
ミック多層配線基板に比べ、高配線密度化、薄膜化、小
型化を図ることができる。[0005] Such a multilayer wiring board is formed by sequentially stacking an insulating layer and a conductor layer on a copper-clad board or a ceramic board. The insulating layer of the multilayer wiring board manufactured by this method is formed by applying a resin such as polyimide,
It can be thinned. Further, the conductor layer can be formed by plating, and fine wiring can be performed. On the other hand, the via hole connecting the upper and lower conductor layers can be formed by forming a hole by laser processing or the like and filling the inside with plating. For this reason, a multilayer printed wiring board that collectively stacks conventional copper-clad
Alternatively, higher wiring density, thinner film, and smaller size can be achieved as compared with a ceramic multilayer wiring substrate in which green sheets are stacked and fired at once.
【0006】また、インターポーザに対し、低コスト化
の要求とともに、絶縁層の熱的安定性や配線のさらなる
微細化等の機能面の要求が高まってきている。これらの
要求に対応するため、銅箔付ポリイミドフィルムを接着
剤で貼り合わせた構成のものも提案されている。この構
成では、絶縁層として、耐熱性の高いポリイミド樹脂を
用いることができる点と、加えて、銅箔の薄さ並びに絶
縁層との接触面を平滑にできることから、さらなる微細
配線を形成することが可能となり、より高配線密度化、
薄膜化、小型化を図ることができる。[0006] In addition to the demand for lower cost of the interposer, the demand for functional aspects such as thermal stability of the insulating layer and further miniaturization of the wiring has been increasing. In order to meet these demands, a structure in which a polyimide film with a copper foil is bonded with an adhesive has been proposed. In this configuration, since a polyimide resin having high heat resistance can be used as the insulating layer, and in addition, the thin copper foil and the contact surface with the insulating layer can be smoothed, so that further fine wiring is formed. Enables higher wiring density,
It can be made thinner and smaller.
【0007】半導体素子内の処理速度が高まるにつれ、
インターポーザ内を伝送する信号も高速化の要求が高ま
ってきている。これとともに、半導体素子の入出力端子
数も増加する傾向にあり、インターポーザとの接続方法
は、ワイヤーボンディングでは対応しきれくなり、格子
配列のフリップチップ接続が必要となる。この結果、イ
ンターポーザ内の接続端子からの配線の引き回しが単層
では困難になり、少なくとも2層に分けて配線を行う必
要が出てくる。また、信号の高速化に対応するため、配
線のマイクロストリップ構造やストリップ構造、あるい
は、コプレナー構造が必要になる場合があり、インター
ポーザの構造としてはますます多層化の方向にある。As the processing speed in a semiconductor device increases,
There is an increasing demand for higher speed transmission of signals transmitted through the interposer. At the same time, the number of input / output terminals of the semiconductor element also tends to increase, and the connection method with the interposer becomes completely compatible with wire bonding, and flip-chip connection in a grid arrangement is required. As a result, it is difficult to route the wiring from the connection terminal in the interposer with a single layer, and it is necessary to divide the wiring into at least two layers. In addition, in order to cope with high-speed signals, a microstrip structure, a strip structure, or a coplanar structure of wiring may be required, and the structure of the interposer is becoming more and more multilayered.
【0008】しかしながら、インターポーザを製造する
側からみると、層数の増加は製造収率を著しく落とすこ
とになる。このため、いかにして配線を効率的に配置さ
せ、層数を減らす設計を行うかが重要になってくる。効
率的な配線を形成するための手段の一つとして、ビアホ
ールのランド径を小さくすることがあげられる。この結
果、製造精度を考慮すると、ビアホールの径自体を小さ
くする必要がある。[0008] However, from the viewpoint of the manufacture of the interposer, an increase in the number of layers significantly reduces the manufacturing yield. For this reason, it is important how to design the wiring efficiently and reduce the number of layers. One of means for forming an efficient wiring is to reduce the land diameter of a via hole. As a result, in consideration of manufacturing accuracy, it is necessary to reduce the diameter of the via hole itself.
【0009】一方、エキシマーレーザやYAG第3高調
波、第4高調波を用いたレーザ加工機の導入が盛んにな
り、微小径の孔形成が容易になってきた。On the other hand, the introduction of excimer lasers and laser processing machines using the third and fourth harmonics of YAG have become popular, and the formation of small-diameter holes has been facilitated.
【0010】ビアホールを形成する方法として、レーザ
等で孔を形成して、下部パッド表面を露出させた後、無
電解銅めっき等で電気めっきのシード層を形成し、それ
を電極にして孔内部の側面や底部に一定厚のめっき形成
を行う。近年では、高速信号を通すため、あるいは、ビ
アホール直上へビアホールを形成して配線の自由度を上
げる目的で、孔内部をめっき金属で埋めてしまう、フィ
ルドビアめっきが注目されている。As a method of forming a via hole, a hole is formed by a laser or the like, a lower pad surface is exposed, and a seed layer for electroplating is formed by electroless copper plating or the like, and the seed layer is used as an electrode to form a via hole. A constant thickness of plating is formed on the side and bottom of the substrate. In recent years, attention has been paid to filled via plating in which the inside of a hole is filled with a plating metal in order to pass a high-speed signal or to increase a degree of freedom of wiring by forming a via hole right above the via hole.
【0011】しかし、ビア径が小さいということは必然
的に下部パッドとの接触面積が小さくなるため、接続信
頼性を著しく低下させることになる。たとえば、接着剤
の熱膨張係数は、ポリイミドや導体のそれに比べて大き
いため、温度サイクルテストにより、接着剤界面での剥
離が起こりやすくなり、その結果、微小ビアホールでは
断線を引き起こす。However, a small via diameter inevitably reduces the contact area with the lower pad, thereby significantly lowering the connection reliability. For example, since the thermal expansion coefficient of the adhesive is larger than that of polyimide or a conductor, peeling at the interface of the adhesive is likely to occur in the temperature cycle test, and as a result, disconnection occurs in the minute via hole.
【0012】一般的に銅表面は粗化する手法が確立され
ているため、銅と接着剤の界面ではある程度の強度が確
保できているが、ポリイミド表面については各種接着剤
との強度を保つ手法としてプラズマ処理やコロナ処理等
があるが、必ずしも信頼性の高い接着性が確保できてい
るわけではない。Generally, a method for roughening the copper surface has been established, so that a certain degree of strength can be secured at the interface between copper and the adhesive, but a method for maintaining the strength of the polyimide surface with various adhesives. Examples include plasma treatment and corona treatment, but they do not necessarily ensure highly reliable adhesion.
【0013】[0013]
【発明が解決しようとする課題】本発明は係る従来技術
の問題点に鑑みてなされたもので、接続信頼性のある微
小径ビアホールを有する多層配線基板を提供することを
課題とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has as its object to provide a multilayer wiring board having connection-reliable minute via holes.
【0014】[0014]
【課題を解決するための手段】本発明において上記の課
題を達成するために、請求項1に記載の発明は、上部パ
ッドが形成された絶縁フィルムと下部パッドが形成され
た絶縁基板を接着積層し、前記両パッド間をビアホール
にて接続した多層配線基板において、前記絶縁フィルム
の裏面にパッド状導体層を設けたことを特徴とする多層
配線基板としたものである。また、請求項2に記載の発
明は、絶縁フィルムがポリイミド樹脂をベースとしてい
ることを特徴とする請求項1記載の多層配線基板とした
ものである。In order to achieve the above object, the present invention provides an adhesive film comprising an insulating film on which upper pads are formed and an insulating substrate on which lower pads are formed. Further, in the multilayer wiring board in which both pads are connected by a via hole, a pad-shaped conductor layer is provided on the back surface of the insulating film. According to a second aspect of the present invention, there is provided the multilayer wiring board according to the first aspect, wherein the insulating film is based on a polyimide resin.
【0015】[0015]
【発明の実施の形態】本発明の多層配線基板についてビ
アホール近傍の図を用いて説明する。図3は従来の多層
配線基板の断面図である。単層あるいは多層の絶縁基板
32表面の下部パッド31と絶縁フィルムの表面の上部
パッド36間をビアホール35で電気的に接続されてい
る。絶縁フィルムはポリイミドフィルム34であり、接
着剤33を介して絶縁基板32上に貼り合わされてい
る。ここで、絶縁基板32が絶縁フィルムであってもよ
い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A multilayer wiring board according to the present invention will be described with reference to a view near a via hole. FIG. 3 is a sectional view of a conventional multilayer wiring board. A via hole 35 electrically connects the lower pad 31 on the surface of the single-layer or multilayer insulating substrate 32 and the upper pad 36 on the surface of the insulating film. The insulating film is a polyimide film 34, which is bonded on the insulating substrate 32 via an adhesive 33. Here, the insulating substrate 32 may be an insulating film.
【0016】ビアホール35の形成は、まず、銅箔付き
ポリイミドフィルムを接着剤を介して絶縁基板に貼り合
わせた後、下部パッド上のポリイミドフィルム34上に
ある銅箔表面からレーザにてビアホール形成のための孔
をあける。レーザの発振周波数を加工中に変えることに
より、表層の銅箔を加工後、絶縁層を加工し、下部パッ
ド上で停止することが可能である。レーザの種類として
は、炭酸ガスレーザ、YAG(基本波、第2高調波、第
3高調波、第4高調波)レーザ、エキシマーレーザ等が
上げられるが、微細孔を形成するには400nm以下の
短波長レーザであるYAG第3高調波、第4高調波なら
びにエキシマーレーザが好ましい。The via hole 35 is formed by first bonding a polyimide film with copper foil to an insulating substrate via an adhesive, and then forming a via hole by laser from the surface of the copper foil on the polyimide film 34 on the lower pad. Drill holes for By changing the oscillation frequency of the laser during processing, it is possible to process the insulating layer after processing the surface copper foil and stop on the lower pad. Examples of the type of laser include a carbon dioxide laser, a YAG (basic wave, a second harmonic, a third harmonic, and a fourth harmonic) laser, an excimer laser, and the like. YAG third harmonic, fourth harmonic, and excimer laser, which are wavelength lasers, are preferred.
【0017】レーザ加工により露出した銅などの下部パ
ッド表面を含め、孔内部およびポリイミドフィルム上銅
箔表面に電気銅めっきのためのシード層を無電解めっき
にて形成し、電気銅めっきにて残りの孔内部をめっき金
属で埋める。最後に、表面の導体層をフォトエッチング
法にて上部パッド36を形成する。A seed layer for electrolytic copper plating is formed by electroless plating on the inside of the hole and on the surface of the copper foil on the polyimide film, including the surface of the lower pad made of copper or the like exposed by the laser processing, and the remaining layer is formed by electrolytic copper plating. Fill the inside of the hole with plating metal. Finally, the upper pad 36 is formed on the surface of the conductor layer by photoetching.
【0018】ビアホールの径が小さくなると、下部パッ
ド31との接触面積は小さくなり、接続信頼性が低下す
る。As the diameter of the via hole decreases, the contact area with the lower pad 31 decreases, and the connection reliability decreases.
【0019】このため、本発明では、図1に示すように
ビアホール部における絶縁フィルム5の裏面にパッド状
の導体層1を形成させる。接合強度の低い、ビアホール
底部近傍にパッド状の導体層1を設置し、加えて接着剤
層と接する導体面を粗化することにより、この部分の接
着剤層の上下面との接着強度を向上させることができ
る。このため、接着剤層と導体層あるいはポリイミド層
との熱膨張係数差による、ビアホール底部近傍にかかる
応力を低減することができ、その結果、温度サイクルテ
ストにおけるビア断線を抑えることが可能になる。Therefore, in the present invention, as shown in FIG. 1, the pad-shaped conductor layer 1 is formed on the back surface of the insulating film 5 in the via hole. A pad-shaped conductor layer 1 is provided near the bottom of the via hole having a low bonding strength, and the surface of the conductor in contact with the adhesive layer is roughened to improve the adhesive strength between the adhesive layer and the upper and lower surfaces of the adhesive layer. Can be done. For this reason, the stress applied to the vicinity of the bottom of the via hole due to the difference in the thermal expansion coefficient between the adhesive layer and the conductor layer or the polyimide layer can be reduced, and as a result, disconnection of the via in the temperature cycle test can be suppressed.
【0020】パッド状の導体層1の製造方法としては、
両面銅箔ポリイミドフィルムの片面を、定法であるフォ
トエッチングによって形成することができる。両面銅箔
ポリイミドフィルムの銅箔とポリイミドフィルムとの接
着強度は、銅箔のマット面と接着しているため、非常に
接着信頼性が高い。The method for manufacturing the pad-shaped conductor layer 1 is as follows.
One side of the double-sided copper foil polyimide film can be formed by photo etching, which is a common method. The bonding strength between the copper foil and the polyimide film of the double-sided copper foil polyimide film is extremely high because the bonding is performed with the matte surface of the copper foil.
【0021】パッド状の導体層1の形状は特に限定する
ものではないが、対する下部パッドの面積より大きいほ
うが好ましい。また、パッド状の導体層1を他の配線や
ビアホールと電気的に接続させた構造にしても、当該ビ
アホール6以外とは電気的に孤立させた構造にしても構
わないが、接着剤の絶縁性を考慮すると電気的に孤立さ
せた構造にしたほうが好ましい。The shape of the pad-shaped conductor layer 1 is not particularly limited, but is preferably larger than the area of the corresponding lower pad. The pad-shaped conductor layer 1 may be electrically connected to another wiring or via hole, or may be electrically isolated from other than the via hole 6. Considering the properties, it is preferable to adopt an electrically isolated structure.
【0022】[0022]
【実施例】以下、本発明に係わる多層配線基板の製造例
を、図2の(a)〜(g)を用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an example of manufacturing a multilayer wiring board according to the present invention will be described with reference to FIGS.
【0023】図2(a)に示すポリイミドからなる絶縁
フィルム11(厚さ50μm)の両面に電解銅箔12
(厚さ18μm)を形成した銅箔付きポリイミドテープ
(ユピセル、宇部興産製)の両面にフォトレジストとし
てPMER(東京応化工業製)をコーティングし、80
℃、30分乾燥させた。乾燥後の膜厚は6μmであっ
た。裏面側のフォトレジストに、所定のパターンを有す
るフォトマスクを介して露光、現像を行い、フォトレジ
ストパターンを形成する。さらに、50℃、40°Be
の塩化第2鉄液で銅露出部を溶解除去してパッド状の導
体層13を形成した(図2(b))。パッド状の導体層
13の直径は200μmであった。An electrolytic copper foil 12 is formed on both sides of an insulating film 11 (thickness: 50 μm) made of polyimide shown in FIG.
PMER (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is coated as a photoresist on both sides of a polyimide tape (upisel, manufactured by Ube Industries, Ltd.) with a copper foil having a thickness of 18 μm.
C. and dried for 30 minutes. The film thickness after drying was 6 μm. The photoresist on the back side is exposed and developed through a photomask having a predetermined pattern to form a photoresist pattern. 50 ° C, 40 ° Be
The exposed copper portion was dissolved and removed with a ferric chloride solution to form a pad-shaped conductor layer 13 (FIG. 2B). The diameter of the pad-shaped conductor layer 13 was 200 μm.
【0024】次に、パッド状の導体層13の表面を30
℃、200g/l過硫酸アンモニウム水溶液にて表面の
粗化を行った。Next, the surface of the pad-shaped conductor layer 13 is
The surface was roughened with a 200 g / l aqueous solution of ammonium persulfate at ℃.
【0025】図2(c)に示すように、同様に粗化処理
を加えた直径100μmの下部パッド16を有するガラ
ス−BTの多層配線基板である絶縁基板14上に、エポ
キシ系の接着剤層15を介し、下部パッド16の中心と
パッド状の導体層13の中心が一致するように80℃で
接着積層した。その後、オーブン中、150℃で8時間
加熱処理を行った。As shown in FIG. 2C, an epoxy-based adhesive layer is formed on an insulating substrate 14 which is a glass-BT multilayer wiring substrate having a lower pad 16 having a diameter of 100 μm and subjected to a roughening treatment. The adhesive layer was laminated at 80 ° C. so that the center of the lower pad 16 and the center of the pad-shaped conductor layer 13 coincided with each other via 15. Thereafter, heat treatment was performed in an oven at 150 ° C. for 8 hours.
【0026】図2(d)に示すように、YAGレーザの
第4高調波を用いて、銅箔12の表面から加工を行い、
ビアホール形成のための孔17を形成した。このとき、
銅層と絶縁層の加工は発振周波数を変えて行い、下部パ
ッド16上で加工を止めた。銅箔12表面の孔径は60
μmであった。As shown in FIG. 2D, processing is performed from the surface of the copper foil 12 using the fourth harmonic of the YAG laser.
Holes 17 for forming via holes were formed. At this time,
The processing of the copper layer and the insulating layer was performed by changing the oscillation frequency, and the processing was stopped on the lower pad 16. The hole diameter of the copper foil 12 surface is 60
μm.
【0027】図2(e)に示すように、孔17内部およ
び銅箔12表面に無電解銅めっき層を形成し、さらに、
電気銅めっきで孔内部をめっき金属で埋め、ビアホール
18を形成するとともに、銅箔表面にめっき層を形成し
た。このとき、ポリイミド上の銅層厚は銅箔の厚さを含
めて23μmであった。As shown in FIG. 2E, an electroless copper plating layer is formed inside the hole 17 and on the surface of the copper foil 12, and further,
The inside of the hole was filled with a plating metal by electrolytic copper plating to form a via hole 18 and a plating layer was formed on the surface of the copper foil. At this time, the thickness of the copper layer on the polyimide was 23 μm including the thickness of the copper foil.
【0028】図2(f)に示すように、表面の銅箔上に
フォトレジストとしてPMER(東京応化工業製)をコ
ーティングし、80℃、30分で乾燥した。乾燥後の膜
厚は6μmであった。さらに、所定のパターンを有する
フォトマスクを介して露光、現像を行い、フォトレジス
トパターンを形成した。さらに、50℃、40°Beの
塩化第2鉄液で銅露出部を溶解除去し、フォトレジスト
を除去して上部パッド19等の導体層を形成した。As shown in FIG. 2 (f), PMER (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated as a photoresist on the copper foil on the surface, and dried at 80 ° C. for 30 minutes. The film thickness after drying was 6 μm. Further, exposure and development were performed through a photomask having a predetermined pattern to form a photoresist pattern. Further, the exposed copper portion was dissolved and removed with a ferric chloride solution at 50 ° C. and 40 ° Be, and the photoresist was removed to form a conductor layer such as the upper pad 19.
【0029】図2(g)に示すように、同様に、パッド
状導体層22を有するポリイミドフィルム21を、接着
剤20を介してラミネートし、さらに、ビアホール23
および上部パッド24を形成し、多層化して本発明の多
層配線基板を作製した。場合によっては、これら工程を
繰り返し必要層数を積層することができる。As shown in FIG. 2G, similarly, a polyimide film 21 having a pad-shaped conductor layer 22 is laminated via an adhesive 20, and further a via hole 23 is formed.
Then, the upper pad 24 was formed and multilayered to produce a multilayer wiring board of the present invention. In some cases, these steps can be repeated to laminate the required number of layers.
【0030】[0030]
【発明の効果】本発明は、導体層付き絶縁フィルムを接
着積層する多層配線基板において、微小ビアホール近傍
で、パッド状の導体層を設置して接着剤とポリイミドの
界面をなくすことにより、熱応力による界面剥離を防止
でき、接続強度の低い微小ビアホールの接続信頼性を上
げることができるという効果がある。According to the present invention, in a multilayer wiring board in which an insulating film with a conductive layer is bonded and laminated, a pad-like conductive layer is provided near a minute via hole to eliminate the interface between the adhesive and the polyimide, thereby reducing thermal stress. This can prevent the interface peeling due to the above, and can improve the connection reliability of the minute via hole having low connection strength.
【0031】[0031]
【図1】本発明の多層配線基板を示す断面図。FIG. 1 is a sectional view showing a multilayer wiring board of the present invention.
【図2】本発明の多層配線基板の製造方法を示す断面
図。FIG. 2 is a cross-sectional view illustrating a method for manufacturing a multilayer wiring board according to the present invention.
【図3】従来の多層配線基板を示す断面図。FIG. 3 is a sectional view showing a conventional multilayer wiring board.
【図4】従来の多層配線基板に半導体素子を搭載しプリ
ント配線基板へ実装した形態を示す断面図。FIG. 4 is a cross-sectional view showing an embodiment in which a semiconductor element is mounted on a conventional multilayer wiring board and mounted on a printed wiring board.
【符号の説明】 1…パッド状導体層 2…下部パッド 3…絶縁基板 4…接着剤層 5…絶縁フィルム 6…ビアホール 7…上部パッド 11…絶縁フィルム 12…銅箔 13…パッド状導体層 14…絶縁基板 15…接着剤層 16…下部パッド 17…孔 18…ビアホール 19…上部パッド 20…接着剤層 21…絶縁層 22…パッド状導体層 23…ビアホール 24…上部パッド 31…下部パッド 32…絶縁基板 33…接着剤層 34…絶縁層 35…ビアホール 36…上部パッド 41…半導体素子 42…パッド 43…バンプ 44…パッド 45…導体配線層 46…半田ボール 47a…ベース基板 47b…多層配線層 48…ビアホール 49…下部導体配線層 50…スルーホール 51…プリント配線基板DESCRIPTION OF SYMBOLS 1 ... Pad-shaped conductor layer 2 ... Lower pad 3 ... Insulating substrate 4 ... Adhesive layer 5 ... Insulating film 6 ... Via hole 7 ... Upper pad 11 ... Insulating film 12 ... Copper foil 13 ... Pad-shaped conductor layer 14 ... insulating substrate 15 ... adhesive layer 16 ... lower pad 17 ... hole 18 ... via hole 19 ... upper pad 20 ... adhesive layer 21 ... insulating layer 22 ... pad-shaped conductor layer 23 ... via hole 24 ... upper pad 31 ... lower pad 32 ... Insulating substrate 33 ... Adhesive layer 34 ... Insulating layer 35 ... Via hole 36 ... Top pad 41 ... Semiconductor element 42 ... Pad 43 ... Bump 44 ... Pad 45 ... Conductor wiring layer 46 ... Solder ball 47a ... Base substrate 47b ... Multilayer wiring layer 48 ... Via holes 49 ... Lower conductor wiring layer 50 ... Through holes 51 ... Printed wiring board
───────────────────────────────────────────────────── フロントページの続き (72)発明者 馬庭 進 東京都台東区台東1丁目5番1号 凸版印 刷株式会社内 Fターム(参考) 5E346 AA06 AA12 AA15 AA16 AA22 AA32 AA35 AA43 AA51 BB11 BB16 CC10 CC32 DD32 EE38 FF07 FF15 GG15 GG17 GG22 GG28 HH11 HH31 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Susumu Maba 1-5-1, Taito, Taito-ku, Tokyo Toppan Printing Co., Ltd. F-term (reference) 5E346 AA06 AA12 AA15 AA16 AA22 AA32 AA35 AA43 AA51 BB11 BB16 CC10 CC32 DD32 EE38 FF07 FF15 GG15 GG17 GG22 GG28 HH11 HH31
Claims (2)
部パッドが形成された絶縁基板を接着積層し、前記両パ
ッド間をビアホールにて接続した多層配線基板におい
て、 前記絶縁フィルムの裏面にパッド状導体層を設けたこと
を特徴とする多層配線基板。1. A multilayer wiring board in which an insulating film on which an upper pad is formed and an insulating substrate on which a lower pad is formed are bonded and laminated, and the pads are connected by via holes. A multilayer wiring board provided with a conductor layer.
していることを特徴とする請求項1記載の多層配線基
板。2. The multilayer wiring board according to claim 1, wherein the insulating film is based on a polyimide resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001122633A JP2002319762A (en) | 2001-04-20 | 2001-04-20 | Multilayer wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001122633A JP2002319762A (en) | 2001-04-20 | 2001-04-20 | Multilayer wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002319762A true JP2002319762A (en) | 2002-10-31 |
Family
ID=18972315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001122633A Pending JP2002319762A (en) | 2001-04-20 | 2001-04-20 | Multilayer wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002319762A (en) |
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| WO2004073370A1 (en) * | 2003-02-13 | 2004-08-26 | Fujikura Ltd. | Multilayer board and its manufacturing method |
| JP2012015159A (en) * | 2010-06-29 | 2012-01-19 | Toppan Forms Co Ltd | Wiring board |
| JP2015214085A (en) * | 2014-05-09 | 2015-12-03 | 日立化成株式会社 | Laminated body, laminated board, and multilayer printed wiring board |
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| JP2015214085A (en) * | 2014-05-09 | 2015-12-03 | 日立化成株式会社 | Laminated body, laminated board, and multilayer printed wiring board |
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