JP2002319363A - TEM sample mount - Google Patents

Abstract

An object of the present invention is to provide a TEM sample mount having high stability of a TEM sample brought into contact with a mounting surface and being less affected by characteristic X-rays from the mount caused by scattered electron beams. SOLUTION: A TEM sample 3 is mounted on a mounting surface 2a of a mounting base 1a. The bottom of TEM sample 3 is 30 °
The mounting surface 2a is also inclined by 30 °. TE
The M sample 3 is attached to the end of the attachment surface 2a on the second surface side of the attachment base 1a. At this time, the TEM sample 3
And the mounting surface 2a of the mounting base 1a are both inclined at the same angle, so that the entire bottom surface of the TEM sample 3 is mounted on the mounting surface 2a.
a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a TEM sample mount for mounting a TEM sample which is a sample of a transmission electron microscope (TEM).

[0002]

2. Description of the Related Art In recent years, FIs with built-in microprobes have been developed.
A B (Focused Ion Beam) processing apparatus has been developed and has been put to practical use as an apparatus for producing a TEM sample. Since a fine TEM sample having a size of several tens of μm cannot be grasped with tweezers or the like, this FIB processing apparatus realizes handling of the small TEM sample by using a microprobe.

FIGS. 37 to 47 are diagrams showing a conventional method of manufacturing a TEM sample using a FIB processing apparatus having a built-in microprobe, in the order of steps. Referring to FIG. 37, first, semiconductor chip piece 102 is placed on FIB sample holder 101.
Is set and inserted into the FIB chamber. Next, a tungsten film 3a is formed on the TEM sample of the semiconductor chip 102 using a tungsten deposition gun (not shown). The tungsten film 3a functions as a protective film for protecting the TEM sample from subsequent gallium ion irradiation.

Referring to FIG. 38, the area around the TEM sample is shaved off by irradiating gallium ions toward semiconductor chip 102 from above perpendicularly to the plane of the paper of FIG. I do. For cutting the bottom surface, the FIB sample holder 101 is moved 30
This is done by inclining by degrees. Semiconductor chip piece 102
The TEM sample and the TEM sample are connected to each other by the columnar portion 104.

Referring to FIG. 39, next, the microprobe 4 built in the FIB processing apparatus is operated to bring its tip into contact with the upper surface of the TEM sample. Next, a tungsten film 22 is formed at a contact portion between the TEM sample and the microprobe 4 using a tungsten deposition gun (not shown). The TEM sample and the microprobe 4 are bonded to each other by the tungsten film 22.

Referring to FIG. 40, next, the columnar portion 104 and the TEM sample are completely separated by irradiating gallium ions. Next, the microprobe 4 is operated to extract a TEM sample from the semiconductor chip piece 102.
After that, the FIB sample holder 101 is pulled out of the FIB chamber.

FIG. 41 shows a line segment x1-x1 shown in FIG.
FIG. 4 is a cross-sectional view showing a cross-sectional structure with respect to a position along. T
EM sample 3b (for convenience of description, TEM sample 3b and tungsten film 3a are also collectively referred to as "TEM sample 3")
Has a bottom surface inclined by 30 ° with respect to the first main surface. For convenience of description, in this specification, a surface on which an electron beam is incident at the time of a subsequent TEM observation is referred to as a “first main surface”,
The main surface on the back side of the first main surface is referred to as “second main surface”. Further, a surface that intersects the first and second main surfaces is referred to as a “side surface”. In the TEM sample 3b shown in FIG. 41, the main surface including the long side on the left side corresponds to the first main surface, and the main surface including the short side on the right side corresponds to the second main surface. Is the side surface.

Referring to FIG. 42, a TEM sample mounting table (hereinafter, simply referred to as “mounting table”) 110 for mounting TEM sample 3 is prepared. The mounting table 110 has a mounting surface 111 on which the TEM sample 3 is mounted later. The mounting surface 111 intersects perpendicularly with the first and second surfaces. For convenience of explanation, in the present specification, the T when the TEM sample 3 is mounted on the mounting surface 111 is described.
The surface of the EM sample 3 on the first main surface side is referred to as “first surface”, and the surface of the TEM sample 3 on the second main surface side is referred to as “second surface”. In the mounting table 110 shown in FIG. 42, the surface appearing in FIG. 42 corresponds to the first surface, and the surface on the back side corresponds to the second surface.

Next, referring to FIG. 43, the mounting table 110 is mounted on the TEM sample holder 112. Then, TEM
The sample holder 112 is inserted into the FIB processing device.

Referring to FIG. 44, next, the microprobe 4 is operated to bring the TEM sample 3 into contact with the mounting surface 111 of the mounting table 110. 44, the illustration of the TEM sample holder 112 is omitted.

FIG. 45 is an enlarged perspective view schematically showing a contact portion between the TEM sample 3 and the mounting surface 111. As described above, since the bottom surface of the TEM sample 3 is inclined with respect to the first main surface, the TEM sample 3 and the mounting surface 111 are on one straight line where the first main surface and the bottom surface of the TEM sample 3 intersect. Only in contact with each other.

Referring to FIG. 46, next, using a tungsten deposition gun (not shown), the TEM sample 3 and the mounting surface 1 are mounted.
A tungsten film 51 is formed at a portion in contact with 11. Specifically, the valve of the tungsten deposition gun is opened and W
(CO) ₆ gas is released and the tungsten film 5
Gallium ions are irradiated to the region to be formed. As a result, the gallium ions react with the W (CO) ₆ gas to form the tungsten film 51. The TEM sample 3 and the mounting surface 111 are bonded to each other by the tungsten film 51.

Referring to FIG. 47, the microprobe 4 is cut by irradiating gallium ions. Through the above steps, the preparation of the TEM sample is completed.

FIG. 48 is a perspective view schematically showing a situation in which a TEM sample 3 is observed using a TEM. FIG.
After the TEM sample is prepared by the process shown in FIG.
The TEM sample holder 112 is taken out of the FIB processing device, and is mounted on the TEM device. The TEM sample 3 is observed by irradiating the first main surface of the TEM sample 3 with the incident electron beam 6 and imaging the transmitted electron beam transmitted through the TEM sample 3.

FIG. 49 shows an EDX (Energy) in a TEM.
FIG. 2 is a perspective view schematically showing (Dispersive X-ray spectroscopy) analysis. By detecting the characteristic X-rays 10 generated from the TEM sample 3 due to the irradiation of the incident electron beam 6 with the detector 9, it is possible to analyze the constituent elements and the like of the TEM sample 3.

[0016]

However, the TEM
According to the conventional method of manufacturing a sample, as shown in FIG. 45, the TEM sample 3 conveyed onto the mounting table 110 by the microprobe 4 is one in which the first main surface and the bottom surface of the TEM sample 3 intersect. And the contact area with the mounting surface 111 is extremely small. Therefore, there is a problem that the stability of the TEM sample 3 is low, and the TEM sample 3 may be inclined or fall.

Referring to FIG. 49, scattered electron beams 8 having various scattering angles are generated on the second principal surface side of TEM sample 3 due to a diffraction phenomenon in TEM sample 3. When the mount 110 is irradiated with the scattered electron beam 8, characteristic X-rays 150 corresponding to the material of the mount 110 are generated. For example, when the material of the mounting table 110 is copper, characteristic X-rays 150 of copper are generated. Accordingly, the detector 9 is capable of not only the characteristic X-rays 10 from the TEM sample 3 but also
0 is also detected, and the accuracy of EDX analysis of the TEM sample 3 is reduced.

The present invention has been made in order to solve such a problem. The TEM sample contacted on the mounting surface by the microprobe has high stability, and the characteristic X from the mounting table caused by the scattered electron beam is high. TEM less affected by wire
The purpose is to obtain a sample mount.

[0019]

Means for Solving the Problems Claim 1 of the present invention
The TEM sample mount described in 1 above has a TE having a bottom surface that intersects at an oblique predetermined angle with respect to a first main surface that is an incident surface of an electron beam.
A TEM sample mounting base for mounting the M sample in contact with the bottom surface of the TEM sample, the mounting table including a mounting surface on which the TEM sample is mounted, and the mounting surface is at least partially provided with TE.
The M sample has an inclined surface inclined at a predetermined angle so as to contact the entire bottom surface of the M sample.

Further, according to claim 2 of the present invention, T
The EM sample mount is the TEM sample mount according to claim 1, wherein the EM sample mount is formed in the mounting surface, fits into the shape of the bottom of the TEM sample including the bottom surface of the TEM sample, and has an inclined surface formed on the inner wall. And a groove provided in the portion.

Further, according to the third aspect of the present invention, T
The EM sample mount is the TEM sample mount according to claim 2, wherein the TEM sample further has a second main surface that is a back surface of the first main surface, and the mount surface is on the first main surface side. A first surface of
Defined as a side surface intersecting with the second surface on the second main surface side,
The groove is formed at a central portion between the first surface and the second surface.

Further, according to claim 4 of the present invention, T
The EM sample mount is the TEM sample mount according to claim 2, wherein the TEM sample further has a second main surface that is a back surface of the first main surface, and the mount surface is on the first main surface side. A first surface of
Defined as a side surface intersecting with the second surface on the second main surface side,
The groove is formed at the end on the second surface side.

Further, according to claim 5 of the present invention, T
The EM sample mount is the TEM sample mount according to any one of claims 1 to 4, wherein the TEM sample includes a second main surface that is a back surface of the first main surface, and a first and second TEM samples. And a supporting member formed on the mounting surface and in contact with the side surface of the TEM sample to support the TEM sample.

Further, according to claim 6 of the present invention, T
The EM sample mount is the TEM sample mount according to any one of claims 1 to 5, wherein the EM sample mount is formed on the mounting surface, and supports the TEM sample in contact with the first main surface. It is further characterized in that it is provided.

Further, according to the present invention, the T
The EM sample mount is the TEM sample mount according to any one of claims 1, 5, and 6, wherein the TEM sample is a first TEM sample.
It further has a second main surface which is a back surface of the main surface, and the mounting surface is defined as a side surface intersecting the first surface on the first main surface side and the second surface on the second main surface side. It is attached to the end on the second surface side.

Further, according to the present invention, the T
The EM sample mount is the TEM sample mount according to any one of claims 1 to 6, wherein the TEM sample further has a second main surface that is a back surface of the first main surface, and a mounting surface. The semiconductor device further includes a support member formed thereon and supporting the TEM sample in contact with the second main surface.

Further, according to the ninth aspect of the present invention, the T
The EM sample mount is a TE for mounting the TEM sample.
An M sample mounting base, a hollow portion formed around a portion where a TEM sample is mounted, a frame structure defining the hollow portion, and a protrusion projecting from the frame structure into the hollow portion and having a tip portion to which the TEM sample is mounted. Unit.

According to a tenth aspect of the present invention, there is provided a TEM sample mounting base according to the ninth aspect, wherein a plurality of protrusions to which one TEM sample is mounted are provided. It is characterized by the following.

The TEM sample mount according to claim 11 of the present invention is the TEM sample mount according to claim 9 or 10.
A TEM sample mounting table, wherein the TEM sample has a first main surface, which is an incident surface of the electron beam, and a second main surface, which is a back surface of the first main surface. It has a first surface on the surface side and a second surface on the second principal surface side, and the TEM sample is attached to an end on the second surface side.

[0030]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a perspective view showing the structure of the TEM sample mounting table according to Embodiment 1 of the present invention. The mounting table 1a has a mounting surface 2a on which a TEM sample is mounted. The TEM sample 3 shown in FIG. 41 is attached to the attachment surface 2a. Referring to FIG. 41, the bottom surface of TEM sample 3 is inclined at a predetermined angle (30 ° in the example shown in FIG. 41) with respect to the first main surface. Referring to FIG. 1, mounting surface 2a is inclined at the same angle (30 ° in the above example) as the predetermined angle with respect to the second surface of mounting base 1a.

FIGS. 2 to 4 are diagrams showing a method of manufacturing a TEM sample using the mounting table 1a according to the first embodiment in the order of steps. However, in FIGS.
Is omitted. First, the TEM sample 3 shown in FIG. 41 is manufactured through steps similar to those of the conventional method shown in FIGS. Also, the mounting table 1a shown in FIG. 1 is prepared, and the mounting table 1a is mounted on the TEM sample holder 112 as in FIG. Then, the TEM sample holder 11
2 is inserted into the FIB processing apparatus.

Referring to FIG. 2, next, the micro probe 4 is operated to attach the TEM sample 3 to the mounting surface 2a of the mounting base 1a.
Contact. The TEM sample 3 is mounted on an end of the mounting surface 2a on the second surface side of the mounting table 1a so that the second main surface of the TEM sample 3 and the second surface of the mounting table 1a are aligned in the same plane. At this time, the bottom of the TEM sample 3 and the mounting table 1
Since both mounting surfaces 2a are inclined at the same angle, T
The entire bottom surface of the EM sample 3 contacts the mounting surface 2a. Although FIG. 3 shows an example in which the entire mounting surface 2a is inclined, at least a portion of the mounting surface 2a that contacts the bottom surface of the TEM sample 3 may be inclined.

Referring to FIG. 3, next, using a tungsten deposition gun (not shown), the TEM sample 3 and the mounting surface 2a are formed.
A tungsten film 51 is formed at a contact portion with the tungsten film 51. The TEM sample 3 and the mounting surface 2a are formed by the tungsten film 51.
Are bonded to each other.

Referring to FIG. 4, the microprobe 4 is cut by irradiating gallium ions.
Through the above steps, the preparation of the TEM sample is completed.

FIG. 5 shows a TEM according to the first embodiment.
FIG. 3 is a perspective view schematically showing EDX analysis in FIG. However, the illustration of the TEM sample holder 112 is omitted in FIG. By detecting the characteristic X-rays 10 generated from the TEM sample 3 due to the irradiation of the incident electron beam 6 with the detector 9, it is possible to analyze the constituent elements and the like of the TEM sample 3.

As described above, the mounting base 1 according to the first embodiment.
According to a, at least the TEM sample 3 of the mounting surface 2a
Is inclined with respect to the second surface of the mounting table 1a by the same angle as the inclination angle of the bottom surface with respect to the first main surface of the TEM sample 3. Therefore, the entire bottom surface of the TEM sample 3 comes into contact with the mounting surface 2a, and the contact area between them increases, so that the stability of the TEM sample 3 on the mounting surface 2a can be improved.

The TEM sample 3 is attached to the end of the attachment surface 2a on the second surface side of the attachment base 1a. Therefore, as shown in FIG. 5, the amount of the scattered electron beam 8 generated on the second main surface side of the TEM sample 3 that is irradiated on the mounting table 1a can be suppressed. As a result, the characteristic X-rays from the mounting base 1a are detected by the detector 9,
A decrease in the accuracy of the EDX analysis of the TEM sample 3 can be suppressed.

Embodiment 2 FIG. 6 is a perspective view showing a structure of a TEM sample mounting table according to Embodiment 2 of the present invention. FIG. 7 is a side view when the structure shown in FIG. 6 is viewed from the direction of arrow X2. The mounting base 1b is shown in FIG.
Is provided with a mounting surface 2b to which the TEM sample 3 shown in FIG. A groove 15 is formed in the center of the mounting surface 2b between the first surface and the second surface of the mounting base 1b. Groove 1
The shape of 5 is a shape that fits the shape of the bottom of the TEM sample 3 including the bottom surface of the TEM sample 3. Referring to FIG. 7, the side wall 15b of the groove 15 on the second surface side of the mounting base 1b is inclined by 30 ° with respect to the vertical side wall 15a of the groove 15 on the first surface side. The side walls 15a and 15b constitute a part of the mounting surface 2b.

8 to 10 are views showing a method of manufacturing a TEM sample using the mounting table 1b according to the second embodiment in the order of steps. However, in FIG. 8, the illustration of the TEM sample holder 112 is omitted. First, the TEM sample 3 shown in FIG. 41 is manufactured through steps similar to those of the conventional method shown in FIGS. In addition, the mounting table 1b shown in FIG. 6 is prepared, and the mounting table 1b is mounted on the TEM sample holder 112 as in FIG. Then, the TEM sample holder 112
Is inserted into the FIB processing apparatus.

Referring to FIG. 8, next, TEM sample 3 is brought into contact with mounting table 1b. Specifically, the TEM sample 3 is inserted into the groove 15 by operating the microprobe 4. FIG. 9 is a side view when the structure shown in FIG. 8 is viewed from the direction of arrow X3. The bottom of the TEM sample 3 is
5 is in contact with the side wall 15b. At this time, since the bottom surface of the TEM sample 3 and the side wall 15b of the groove 15 are both inclined at the same angle, the entire bottom surface of the TEM sample 3 is
b and contacts the side wall 15b which is a part of b.

Referring to FIG. 10, next, using a tungsten deposition gun (not shown), a TEM sample 3 and a mounting surface 2 are mounted.
Tungsten films 51 and 52 are formed at the contact portions with b. The tungsten film 51 is formed on the first main surface side of the TEM sample 3, and the tungsten film 52 is formed on the second main surface side of the TEM sample 3. This tungsten film 5
The TEM sample 3 and the mounting surface 2b are adhered to each other by 1 and 52. Thereafter, the microprobe 4 is cut by irradiating gallium ions. Through the above steps, the preparation of the TEM sample is completed.

As described above, the mounting base 1 according to the second embodiment.
b, a part of the mounting surface 2b is formed and the TEM sample 3
The side wall 15b of the groove 15 in contact with the bottom of the TEM sample 3
Groove 1 by the same angle as the inclination angle of the bottom surface with respect to the first main surface of
5 is inclined with respect to the side wall 15a. Therefore, the TEM
Since the entire bottom surface of the sample 3 comes into contact with the mounting surface 2b of the mounting base 1b and the contact area between them increases, the stability of the TEM sample 3 on the mounting surface 2b can be improved. Moreover,
Since the TEM sample 3 is inserted into the groove 15, the stability of the TEM sample 3 can be improved even in comparison with the first embodiment.

The TEM sample 3 is fixed to the mounting table 1b from both sides by a tungsten film 51 on the first main surface side and a tungsten film 52 on the second main surface side. Therefore, as compared with the first embodiment, the TEM sample 3 and the mounting base 1b
And the TE from the mounting base 1b.
It is possible to effectively prevent the M sample 3 from falling off.

FIG. 11 is a side view showing the structure of a TEM sample mount according to a first modification of the second embodiment. The mounting surface 2c of the mounting base 1c has a groove 16 at the end on the first main surface side.
Are formed. The TEM sample 3 and the mounting surface 2c are bonded to each other by a tungsten film 52.

FIG. 12 is a side view showing a structure of a TEM sample mount according to a second modification of the second embodiment. The mounting surface 2d of the mounting base 1d has a groove 17 at an end on the second main surface side.
Are formed. The TEM sample 3 and the mounting surface 2d are bonded to each other by a tungsten film 51.

FIG. 13 is a side view schematically showing an EDX analysis in a TEM according to a second modification of the second embodiment. However, in FIG.
2 is omitted. According to the mounting base 1d according to the second modification of the second embodiment, as shown in FIG.
Among the scattered electron beams 8 generated on the second main surface side of the EM sample 3, the amount of the scattered electron beam 8 irradiated to the mounting table 1d can be suppressed. As a result, it is possible to suppress a decrease in the accuracy of the EDX analysis of the TEM sample 3 due to the characteristic X-ray from the mounting base 1d.

Embodiment 3 FIG. 14 is a perspective view showing the structure of the TEM sample mount according to Embodiment 3 of the present invention. The mounting surface 2e of the mounting base 1e is inclined by a predetermined angle as in the first embodiment. Two support members 20 forming a pair with a predetermined gap 21 interposed therebetween are formed on the mounting surface 2e. The support member 20 is formed at an end on the second surface side of the mount 1e. The width of the gap 21 is equal to the width of the TEM sample 3. Although FIG. 14 shows an example in which the entire mounting surface 2e is inclined, at least a portion of the mounting surface 2e that contacts the bottom surface of the TEM sample 3 may be inclined.

FIGS. 15 and 16 are diagrams showing a method of manufacturing a TEM sample using the mounting base 1e according to the third embodiment in the order of steps. However, in FIG.
2 is omitted. First, through the same steps as in the conventional method shown in FIGS. 37 to 40, the TEM shown in FIG.
Sample 3 is prepared. Also, the mounting table 1e shown in FIG. 14 is prepared, and the mounting table 1e is mounted on the TEM sample holder 112 as in FIG. After that, the TEM sample holder 112 is inserted into the FIB processing device.

Referring to FIG. 15, next, the micro probe 4 is operated to attach the TEM sample 3 to the mounting surface 2 of the mounting base 1e.
e. The TEM sample 3 is a pair of support members 2
Between the zeros, they are attached to the end on the second surface side of the attachment base 1e. At this time, the bottom of the TEM sample 3 and the mounting table 1
e are both inclined at the same angle.
The entire bottom surface of the EM sample 3 contacts the mounting surface 2e. Further, since the width of the gap 21 is equal to the width of the TEM sample 3,
Both side surfaces of the TEM sample 3 are in contact with the support member 20, respectively.

Referring to FIG. 16, next, using a tungsten deposition gun (not shown), the TEM sample 3 and the mounting surface 2 are mounted.
e and a tungsten film 5
1 and 53 are formed. The TEM sample 3 and the mounting table 1e are bonded to each other by the tungsten films 51 and 53. Thereafter, the microprobe 4 is cut by irradiating gallium ions. Through the above steps, TE
Preparation of M sample is completed.

As described above, the mounting base 1 according to the third embodiment.
According to e, while the entire bottom surface of the TEM sample 3 contacts the mounting surface 2e, the side surface of the TEM sample 3
Contact Therefore, even when compared with the first embodiment,
Since the contact area between the TEM sample 3 and the mounting table 1e increases, the stability of the TEM sample 3 on the mounting surface 2e can be further improved.

The TEM sample 3 is attached to the end of the attachment surface 2e on the second surface side of the attachment base 1e. Therefore, in the EDX analysis, it is possible to suppress a decrease in the accuracy of the EDX analysis of the TEM sample 3 caused by the detection of the characteristic X-rays from the mount 1e by the detector 9.

Further, the TEM sample 3 is bonded to the mounting surface 2 e by the tungsten film 51 and to the support member 20 by the tungsten film 53. Therefore, compared to the first embodiment, the adhesive force between the TEM sample 3 and the mounting table 1e can be increased.

FIG. 17 is a perspective view showing the structure of a TEM sample mount according to a modification of the third embodiment. Mounting base 1
Three or more (three in FIG. 17) support members 20 are formed at equal intervals on the mounting surface 2f of f. The TEM sample 3 can be inserted into each gap 21 between the support members 20 adjacent to each other.

Embodiment 4 FIG. 18 is a perspective view showing a structure of a TEM sample mounting table according to Embodiment 4 of the present invention. The mounting surface 2g of the mounting base 1g is inclined by a predetermined angle as in the first embodiment. On the mounting surface 2g, two support members 20 forming a pair with a gap 21 interposed therebetween are formed. The support member 20 is formed at the end on the second surface side of the mounting base 1g. The width of the gap 21 is equal to the width of the TEM sample 3. In addition, a support member 30 that is shorter than the support member 20 is formed on the end of the mount 1g on the second surface side in the gap 21. Although FIG. 18 shows an example in which the entire mounting surface 2g is inclined, at least a part of the mounting surface 2g that contacts the bottom surface of the TEM sample 3 may be inclined.

FIG. 19 shows the mounting base 1 according to the fourth embodiment.
FIG. 9 is a diagram illustrating one step of a method for manufacturing a TEM sample using g. FIG. 20 shows the structure shown in FIG.
FIG. 4 is a top view when viewed from the direction of FIG. However, FIG.
0, the description of the TEM sample holder 112 is omitted. First, the TEM sample 3 shown in FIG. 41 is manufactured through steps similar to those of the conventional method shown in FIGS. Also, the mounting table 1g shown in FIG.
Is mounted on the TEM sample holder 112 in the same manner as in FIG. After that, the TEM sample holder 112 is inserted into the FIB processing device.

19 and 20, the microprobe 4 is operated to bring the TEM sample 3 into contact with the mounting surface 2g of the mounting base 1g. The TEM sample 3 is attached between the pair of support members 20. At this time, the TEM
Since both the bottom surface of the sample 3 and the mounting surface 2g of the mounting base 1g are inclined at the same angle, the entire bottom surface of the TEM sample 3 contacts the mounting surface 2g. Further, since the width of the gap 21 is equal to the width of the TEM sample 3, both side surfaces of the TEM sample 3 are in contact with the support members 20, respectively. Further, the bottom of the second main surface of the TEM sample 3 contacts the support member 30.

Next, in the same manner as in FIG. 16, a TEM sample 3 and a mounting surface 2 g were mounted using a tungsten deposition gun (not shown).
And a tungsten film 51 at a contact portion with the support member 20;
53 is formed. The TEM sample 3 and the mounting table 1g are bonded to each other by the tungsten films 51 and 53.
Thereafter, the microprobe 4 is cut by irradiating gallium ions. Through the above steps, the preparation of the TEM sample is completed.

As described above, the mounting base 1 according to the fourth embodiment.
g, the entire bottom surface of the TEM sample 3 contacts the mounting surface 2g, the side surface of the TEM sample 3 contacts the support member 20, and the bottom of the second main surface of the TEM sample 3
Touch 0. Therefore, the contact area between the TEM sample 3 and the mounting table 1g is larger than that in the third embodiment, so that the stability of the TEM sample 3 on the mounting surface 2g can be further enhanced.

Further, the TEM sample 3 is adhered to the mounting surface 2 g by the tungsten film 51 and is adhered to the support member 20 by the tungsten film 53. Therefore, compared to the first embodiment, the adhesive strength between the TEM sample 3 and the mounting table 1g can be increased.

FIG. 21 is a perspective view showing the structure of a TEM sample mount according to a modification of the fourth embodiment. Mounting base 1
h, three or more (three in FIG. 21) support members 20 are formed at regular intervals with a gap 21 interposed therebetween, and are provided in each gap 21 between the adjacent support members 20. Each has a support member 30 formed thereon.

Embodiment 5 FIG. 22 is a perspective view showing a structure of a TEM sample mount according to Embodiment 5 of the present invention. FIG. 23 is a top view when the structure shown in FIG. 22 is viewed from the direction of arrow X5. Also, FIG.
FIG. 23 is a side view when the structure shown in FIG. 22 is viewed from the direction of arrow X6. However, the illustration of the TEM sample holder 112 is omitted in FIGS. In FIG. 24, the illustration of the support member 20 is omitted. The mounting surface 2i of the mounting base 1i is inclined by a predetermined angle as in the first embodiment. Two support members 20 forming a pair with a predetermined gap 21 interposed therebetween are formed on the mounting surface 2i. The support member 20 is formed at the end on the second surface side of the mounting base 1i. The width of the gap 21 is equal to the width of the TEM sample 3. In addition, a support member 35 that is shorter than the support member 20 is formed in the gap 21. A gap equal to the thickness of the TEM sample 3 is provided between the second surface of the mounting table 1i and the support member 35. 22 to 24 show an example in which the entire mounting surface 2i is inclined, but it is sufficient that at least a portion of the mounting surface 2i that contacts the bottom surface of the TEM sample 3 is inclined.

FIGS. 25 and 26 are perspective views showing a method of manufacturing a TEM sample using the mounting table 1i according to the fifth embodiment in the order of steps. 25 and 26, however, the illustration of the TEM sample holder 112 is omitted. First, FIGS.
The TEM sample 3 shown in FIG. 41 is manufactured through the same steps as the conventional method shown in FIG. Also, the mounting table 1i shown in FIGS. 22 to 24 is prepared, and the mounting table 1i is mounted on the TEM sample holder 112 as in FIG. Then, T
The EM sample holder 112 is inserted into the FIB processing device.

Referring to FIG. 25, next, the micro probe 4 is operated to attach the TEM sample 3 to the mounting surface 2 of the mounting base 1i.
i. The TEM sample 3 is a pair of support members 2
It is attached between 0. At this time, the TEM sample 3
And the mounting surface 2i of the mounting base 1i are both inclined at the same angle, so that the entire bottom surface of the TEM sample 3 is mounted on the mounting surface 2i.
Touch i. Further, since the width of the gap 21 is equal to the width of the TEM sample 3, both sides of the TEM sample 3
Contact Further, the bottom of the first main surface of the TEM sample 3 contacts the support member 35. TE so that the second main surface of the TEM sample 3 and the second surface of the mounting table 1i are aligned in the same plane.
The M sample 3 is attached to the end of the attachment surface 2i on the second surface side of the attachment base 1i.

Referring to FIG. 26, next, using a tungsten deposition gun (not shown), a tungsten film 51 is formed at a contact portion between the TEM sample 3 and the supporting member 35, and the TEM sample 3 and the supporting member are formed. A tungsten film 53 is formed in a contact portion with 20. This tungsten film 51,
53 allows the TEM sample 3 and the mounting table 1i to be bonded to each other. Thereafter, the microprobe 4 is cut by irradiating gallium ions. Through the above steps, the preparation of the TEM sample is completed.

As described above, the mounting base 1 according to the fifth embodiment.
According to i, the entire bottom surface of the TEM sample 3 contacts the mounting surface 2i, the side surface of the TEM sample 3 contacts the support member 20, and the bottom of the first main surface of the TEM sample 3
Touch 5 Therefore, even in comparison with the third embodiment, the contact area between the TEM sample 3 and the mounting table 1i is increased, so that the stability of the TEM sample 3 on the mounting surface 2i can be further improved.

The TEM sample 3 is attached to the end of the attachment surface 2i on the second surface side of the attachment base 1i. Therefore, in the EDX analysis, it is possible to suppress a decrease in the accuracy of the EDX analysis of the TEM sample 3 caused by the detection of the characteristic X-ray from the mounting table 1i by the detector 9.

Further, the TEM sample 3 is adhered to the support member 35 by the tungsten film 51 and is adhered to the support member 20 by the tungsten film 53. Therefore, compared to the first embodiment, the adhesive force between the TEM sample 3 and the mounting table 1i can be increased.

FIG. 27 is a perspective view showing the structure of a TEM sample mount according to a modification of the fifth embodiment. Mounting base 1
Three or more (three in FIG. 27) support members 20 are formed on the mounting surface 2j of j at equal intervals with a gap 21 interposed therebetween. , A support member 35 is formed.

Embodiment 6 FIG. FIG. 28 shows the structure of the TEM sample mount according to the sixth embodiment of the present invention,
It is a top view which shows in the state to which was attached. FIG.
9 is a side view when the structure shown in FIG. 28 is viewed from the direction of arrow X7. The mounting base 1k has a semicircular frame structure 4
0a and a protruding portion 40b protruding from the side surface of the frame structure 40a.
And The protrusion 40b is attached to an end on the bottom surface side of the frame structure 40a. Here, the upper surface of the TEM sample 3 shown in FIG. 29 is the surface irradiated with the incident electron beam. The frame structure 40a defines a hollow portion 41 on the inner surface side, and the protruding portion 40b protrudes into the hollow portion 41. The thickness of the protrusion 40b is smaller than the thickness of the frame structure 40a. T
The mounting surface 2k on which the EM sample 3 is mounted has a protrusion 40
b is defined on the side surface of the tip. TEM sample 3
The TEM sample 3 is located near the center of a circle defined by the frame structure 40 a, and a hollow portion 41 exists around the TEM sample 3.

FIG. 30 is an enlarged perspective view showing an attachment portion between the protruding portion 40b and the TEM sample 3. The side surface of the TEM sample 3 is in contact with the mounting surface 2k. TEM sample 3
Is attached to a central portion between the upper surface and the bottom surface of the protruding portion 40b. The TEM sample 3 and the mounting surface 2k are bonded at one place by a tungsten film 54.

As described above, the mounting base 1 according to the sixth embodiment.
According to k, a hollow portion 41 exists around the TEM sample 3. Therefore, of the scattered electron beams 8 generated on the second main surface side of the TEM sample 3, the amount of the scattered electron beams that are irradiated on the mounting table 1k can be suppressed. As a result, it is possible to suppress a decrease in the accuracy of the EDX analysis of the TEM sample 3 due to the fact that the characteristic X-rays from the mounting table 1k are detected by the detector 9.

In this embodiment, the TEM sample 3 is not attached to the center between the upper surface and the bottom surface of the protrusion 40b, but is attached to the bottom end of the protrusion 40b. 6 and the first embodiment
The characteristic X-rays generated from the mount 1k during the EDX analysis can be further reduced in combination with the effect of the above.

FIG. 31 is a top view showing a structure of a TEM sample mounting table according to a modification of the sixth embodiment of the present invention, with TEM sample 3 mounted. Also, FIG.
FIG. 32 is a side view of the structure shown in FIG. 31 when viewed from the direction of arrow X8. FIG. 33 shows that the protrusion 40b and the TEM
FIG. 4 is an enlarged perspective view showing a portion to be attached to a sample 3. TE
The upper surface (the surface on which the tungsten film 22 is formed) of the M sample 3 is in contact with the protrusion 40b, and the TEM sample 3 and the mounting surface 21 are bonded to each other by the tungsten film 55.

Embodiment 7 FIG. 34 shows the structure of the TEM sample mount according to the seventh embodiment of the present invention,
It is a top view which shows in the state to which was attached. FIG.
5 is a side view when the structure shown in FIG. 34 is viewed from the direction of arrow X9. Mounting base 1m according to Embodiment 7
Is provided with a pair of opposed projections 40b projecting from the side surface of the frame structure 40a. A gap equal to the width of the TEM sample 3 is provided between the tips of the protrusions 40b. The mounting surface 2k on which the TEM sample 3 is mounted is 2
It is defined on the side surface of each tip of each of the protrusions 40b.
Other structures of the mounting base 1m according to the seventh embodiment are the same as those of the mounting base 1k according to the sixth embodiment.

FIG. 36 is an enlarged top view showing a portion where the protrusion 40b and the TEM sample 3 are attached. TEM sample 3
Are in contact with the mounting surface 2k of the protrusion 40b. The TEM sample 3 is attached to a central portion between the upper surface and the bottom surface of the protrusion 40b. The TEM sample 3 and the mounting surface 2k are bonded at two places by a tungsten film 54.

As described above, the mounting base 1 according to the seventh embodiment.
m, two projections 40b are provided, and the TEM sample 3
And the mounting surface 2k are bonded at two places by a tungsten film 54. Therefore, in addition to the effect of the sixth embodiment, the effect of increasing the adhesive force between the TEM sample 3 and the mounting table 1m is obtained.

The TEM sample 3 is not attached to the center between the upper surface and the bottom surface of the protrusion 40b, but is attached to the bottom end of the protrusion 40b. 7 and Embodiment 1 above
In combination with the effect of the above, the characteristic X-rays generated from the mounting table 1m during the EDX analysis can be further reduced.

[0079]

According to the first aspect of the present invention, the entire surface of the bottom surface of the TEM sample comes into contact with the mounting surface of the mounting table, and the contact area between them becomes large.
The stability of the M sample can be increased.

According to the second aspect of the present invention, since the TEM sample is inserted into the groove, the stability of the TEM sample can be improved as compared with the first aspect. .

Further, according to the third aspect of the present invention, the TEM sample can be fixed to the mounting table by the tungsten film from both the first main surface side and the second main surface side. Therefore, the adhesive strength between the TEM sample and the mounting table can be increased.

According to the fourth aspect of the present invention, of the scattered electron beams generated on the second main surface side of the TEM sample, the amount of the scattered electron beam irradiated on the mounting table can be suppressed.
As a result, T
A decrease in the accuracy of EDX analysis of the EM sample can be suppressed.

According to the fifth aspect of the present invention, the contact area between the TEM sample and the mounting base is larger than that of the first aspect of the present invention. The stability of the sample can be further increased.

According to the sixth aspect of the present invention, the contact area between the TEM sample and the mounting base is larger than that of the first aspect of the present invention. The stability of the sample can be further increased.

According to the seventh aspect of the present invention, of the scattered electron beams generated on the second main surface side of the TEM sample, the amount of the scattered electron beam irradiated on the mounting table can be suppressed.
As a result, T
A decrease in the accuracy of EDX analysis of the EM sample can be suppressed.

According to the eighth aspect of the present invention, the contact area between the TEM sample and the mounting base is larger than in the first aspect of the present invention. The stability of the sample can be further increased.

According to the ninth aspect of the present invention, since the hollow portion is formed around the place where the TEM sample is mounted, the amount of the scattered electron beam applied to the mounting table can be reduced. Can be suppressed. Therefore, it is possible to suppress a decrease in the accuracy of the EDX analysis of the TEM sample due to the characteristic X-ray generated from the mounting table.

According to the tenth aspect of the present invention, one TEM sample can be bonded to a plurality of protrusions, so that the adhesive force between the TEM sample and the mounting table can be increased.

Further, according to the eleventh aspect of the present invention, of the scattered electron beams generated on the second main surface side of the TEM sample, the amount of the electron beam irradiated on the mounting table can be further suppressed. Therefore, it is possible to further suppress a decrease in the accuracy of the EDX analysis of the TEM sample due to the characteristic X-ray generated from the mounting table.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a structure of a TEM sample mounting table according to Embodiment 1 of the present invention.

FIG. 2 is a diagram illustrating a method of manufacturing a TEM sample using the TEM sample mount according to the first embodiment of the present invention in the order of steps.

FIG. 3 is a diagram illustrating a method of manufacturing a TEM sample using the TEM sample mount according to the first embodiment of the present invention in the order of steps.

FIG. 4 is a diagram illustrating a method of manufacturing a TEM sample using the TEM sample mount according to the first embodiment of the present invention in the order of steps.

FIG. 5 is a perspective view schematically showing EDX analysis in a TEM according to the first embodiment of the present invention.

FIG. 6 is a perspective view showing a structure of a TEM sample mounting table according to Embodiment 2 of the present invention.

FIG. 7 is a side view when the structure shown in FIG. 6 is viewed from the direction of arrow X2.

FIG. 8 is a diagram illustrating a method of manufacturing a TEM sample using a TEM sample mount according to the second embodiment of the present invention in the order of steps.

FIG. 9 is a diagram illustrating a method of manufacturing a TEM sample using a TEM sample mount according to the second embodiment of the present invention in the order of steps.

FIG. 10 is a diagram illustrating a method of manufacturing a TEM sample using a TEM sample mount according to the second embodiment of the present invention in the order of steps.

FIG. 11 is a side view showing a structure of a TEM sample mount according to a first modification of the second embodiment of the present invention.

FIG. 12 is a side view showing a structure of a TEM sample mount according to a second modification of the second embodiment of the present invention.

FIG. 13 is a side view schematically showing EDX analysis in a TEM according to a second modification of the second embodiment of the present invention.

FIG. 14 is a perspective view showing a structure of a TEM sample mounting table according to Embodiment 3 of the present invention.

FIG. 15 is a diagram illustrating a method of manufacturing a TEM sample using a TEM sample mounting table according to Embodiment 3 of the present invention in the order of steps.

FIG. 16 is a diagram illustrating a method of manufacturing a TEM sample using a TEM sample mounting table according to Embodiment 3 of the present invention in the order of steps.

FIG. 17 shows a TE according to a modification of the third embodiment of the present invention.
It is a perspective view which shows the structure of M sample mounting stand.

FIG. 18 is a perspective view showing a structure of a TEM sample mounting table according to Embodiment 4 of the present invention.

FIG. 19 is a view showing one step of a method for manufacturing a TEM sample using the TEM sample mount according to the fourth embodiment of the present invention.

20 is a top view when the structure shown in FIG. 19 is viewed from the direction of arrow X4.

FIG. 21 is a diagram showing a TE according to a modification of the fourth embodiment of the present invention.
It is a perspective view which shows the structure of M sample mounting stand.

FIG. 22 is a perspective view showing a structure of a TEM sample mount according to a fifth embodiment of the present invention.

FIG. 23 is a top view when the structure shown in FIG. 22 is viewed from the direction of arrow X5.

FIG. 24 is a side view of the structure shown in FIG. 22 when viewed from the direction of arrow X6.

FIG. 25 is a perspective view illustrating a method of manufacturing a TEM sample using the TEM sample mount according to the fifth embodiment of the present invention in the order of steps.

FIG. 26 is a perspective view illustrating a method of manufacturing a TEM sample using the TEM sample mount according to the fifth embodiment of the present invention in the order of steps.

FIG. 27 shows a TE according to a modification of the fifth embodiment of the present invention.
It is a perspective view which shows the structure of M sample mounting stand.

FIG. 28 is a top view showing a structure of a TEM sample mounting table according to Embodiment 6 of the present invention in a state where a TEM sample is mounted.

29 is a side view when the structure shown in FIG. 28 is viewed from the direction of arrow X7.

FIG. 30 is an enlarged perspective view showing an attachment portion between the protrusion and the TEM sample.

FIG. 31 is a diagram showing a TE according to a modification of the sixth embodiment of the present invention.
It is a top view which shows the structure of the M sample mounting stand in the state where the TEM sample was mounted.

FIG. 32 is a side view when the structure shown in FIG. 31 is viewed from the direction of arrow X8.

FIG. 33 is an enlarged perspective view showing a mounting portion between the protrusion and the TEM sample.

FIG. 34 is a top view showing a structure of a TEM sample mounting table according to Embodiment 7 of the present invention in a state where a TEM sample is mounted.

FIG. 35 is a side view when the structure shown in FIG. 34 is viewed from the direction of arrow X9.

FIG. 36 is an enlarged top view showing a mounting portion between the protrusion and the TEM sample.

FIG. 37 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 38 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 39 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 40 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 41 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 42 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 43 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 44 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 45 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 46 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 47 is a diagram showing a conventional method for manufacturing a TEM sample in the order of steps.

FIG. 48 is a perspective view schematically showing a situation in which a TEM sample is observed.

FIG. 49 is a perspective view schematically showing EDX analysis in a TEM.

[Explanation of symbols]

1a-1m mounting base, 2a-2k mounting surface, 3 TEM
Sample, 15 to 17 grooves, 20, 30, 35 support members,
21 gap, 40a frame structure, 40b protrusion, 41
Hollow part.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yukari Imai 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Inventor Koji Fukumoto 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Rishi Electric Co., Ltd. F-term (reference) 5C001 AA01 AA05 CC01 CC07

Claims (11)

[Claims] A TEM (Transmissi
a TEM sample mounting table for mounting a sample in contact with the bottom surface of the TEM sample, the TEM sample mounting table including a mounting surface to which the TEM sample is mounted, wherein the mounting surface is at least partially provided in the TEM sample. A TEM sample mount having an inclined surface inclined at the predetermined angle so as to contact the entire bottom surface of the sample. 2. The semiconductor device according to claim 1, further comprising a groove formed in the mounting surface, fitted to a shape of a bottom of the TEM sample including the bottom surface of the TEM sample, and having the inclined surface as a part of an inner wall. 2. The TEM sample mount according to 1. 3. The TEM sample further includes a second main surface that is a back surface of the first main surface, wherein the mounting surface includes a first surface on the first main surface side and a second main surface.
The groove is defined as a side surface intersecting with the second surface on the main surface side, and the groove is formed at a central portion between the first surface and the second surface. TEM sample mount. 4. The TEM sample further includes a second main surface that is a back surface of the first main surface, wherein the mounting surface includes a first surface on the first main surface side and a second main surface.
3. The TEM sample mount according to claim 2, wherein the groove is defined as a side surface intersecting with the second surface on the main surface side, and the groove is formed at an end on the second surface side. 4. 5. The TEM sample further includes a second main surface, which is a back surface of the first main surface, and a side surface intersecting the first and second main surfaces, wherein the TEM sample is formed on the mounting surface. The TEM sample mount according to claim 1, further comprising a support member that contacts the side surface of the TEM sample and supports the TEM sample. 6. The TEM sample mounting according to claim 1, further comprising a support member formed on the mounting surface and supporting the TEM sample in contact with the first main surface. Stand. 7. The TEM sample further includes a second main surface that is a back surface of the first main surface, wherein the mounting surface includes a first surface on the first main surface side and a second main surface.
The TEM sample mount according to claim 1, wherein the side surface is defined as a side surface intersecting with the second surface on the main surface side, and the TEM sample is attached to an end on the second surface side. . 8. The TEM sample further has a second main surface that is a back surface of the first main surface, is formed on the mounting surface, and supports the TEM sample in contact with the second main surface. The TEM sample mount according to any one of claims 1 to 6, further comprising a support member configured to perform the following. 9. TEM (Transmission Electron Micros)
(cope) a TEM sample mounting table for mounting a sample, a hollow portion formed around a place where the TEM sample is mounted, a frame structure defining the hollow portion, and a hollow portion formed from the frame structure into the hollow portion. Protrude and the T
A TEM sample mounting table comprising: a projection to which an EM sample is mounted. 10. The T according to claim 9, wherein a plurality of the protrusions to which one of the TEM samples is attached are provided.
EM sample mount. 11. The TEM sample has a first main surface, which is an incident surface of an electron beam, and a second main surface, which is a back surface of the first main surface. 10. A TEM sample having a first surface on a first main surface side and a second surface on a second main surface side, wherein the TEM sample is attached to an end on the second surface side. Or TE described in 10
M sample mount.