JP2002311565A - Method for manufacturing fine structure, binary mask, and method for manufacturing binary mask - Google Patents

Abstract

(57) [Problem] To provide a gray-level shape such as a curved surface without using a gray mask. A binary mask (60) having dots (61) of an area unit smaller than the minimum resolution of an exposure apparatus is provided. By controlling the amount of exposure transmitted through the binary mask 60 according to the on / off area ratio of the dots 61, the pattern of the dots 61 of the mask 60 is not faithfully reproduced, but in a shade corresponding to the area ratio. The workpiece can be exposed to process the gray level structure.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a liquid crystal panel, a semiconductor substrate, a microelectronic mechanical system (MEMS) substrate, a diffraction grating, a hologram, a microlens substrate, a Fresnel lens substrate, an optical communication device, and the like. The present invention relates to a manufacturing method suitable for manufacturing a fine three-dimensional structure.

[0002]

2. Description of the Related Art Liquid crystal panels are rapidly gaining demand as display panels of mobile phones, displays of notebook computers or PDAs (personal data devices), taking advantage of the advantages of light weight, small size (thinness) and low power consumption. Is growing. In particular, reflective display panels (liquid crystal panels)
Is used to reflect light transmitted through the liquid crystal layer in the direction of the liquid crystal layer again using a reflective electrode to display a desired image, and ambient light such as natural light or illumination light can be used as a light source. In this regard, this is an important factor that enables one of the major problems of a mobile phone to be driven for a long time by a battery.

[0003]

As the color of a display is progressing, a brighter liquid crystal panel is required. Therefore, it is important to improve the reflection efficiency of a reflective electrode or the like that is used for a reflective display panel and that functions as a reflector, thereby improving the light use efficiency. For this reason, it has been studied to improve the light distribution by making the shape of the reflector (reflection surface) not a simple uneven shape, but a curved surface or a multi-step reflection surface, for example. Further, there is a demand for an optimum shape of the reflection surface so that the reflection direction is not a simple curved surface such as a hemisphere but the pupil is used as the reflection direction to enhance the light use efficiency.

However, the optimum reflection shape is not a simple shape, and there are problems in that a reflector having a reflection surface having such a shape is manufactured, for example, the processing accuracy and the number of steps required for the processing are large. . For example, in the case of manufacturing by a photolithography technique using a binary mask as in the case of forming a conventional concave-convex reflection surface, a substrate coated with a photoresist is set in an exposure apparatus called a stepper.
Then, a plurality of reflective photomasks having on-off binary transmissivity, in which different patterns are formed in order to process complicated shapes, are prepared. By exposing the resist by attaching it to a stepper, a multi-stage reflecting surface can be formed. For this reason, in this manufacturing method, the steps are complicated and the number of exposures is large. Further, since it is necessary to change the photomask many times, an alignment error of the mask set in the exposure apparatus (stepper) is added, and it is very difficult to obtain a desired shape.
Requires skill.

On the other hand, a photoresist can be processed into a complicated fine shape by one or a few exposures using a gray level mask (transmittance modulation mask) expressing multiple gradations. The method using the gray level mask is simple and requires a small number of steps (number of exposures), and the number of masks used simultaneously can be reduced to one or several.
Therefore, there is almost no deterioration in accuracy due to mask replacement.

However, the method using a gray level mask has several problems. First, when the mask is set on the stepper for alignment, the reflectivity of the alignment mark is low, so that the mark detection accuracy is reduced and it is difficult to maintain the position accuracy. That is, the gray level mask is a material that absorbs light inside the mask,
For example, the transmittance of light for exposure is controlled by controlling the concentration of silver ions, and an alignment mark is provided in a similar manner. For this reason, the reflectance of the alignment mark is low, and the mark detection accuracy is reduced. Therefore, although the number of times that the mask is set in the exposure apparatus is reduced, it is difficult to align the alignment marks, so that the improvement in accuracy is not so easy.

Further, since the transmittance of the gray level mask is controlled by absorbing light inside the mask, heat is also accumulated by absorbing the light. For this reason, thermal expansion may increase depending on use conditions, and it is difficult to maintain dimensional accuracy. Therefore, when a gray level mask is used, the man-hour for replacing the mask can be omitted, but it is very difficult to maintain and manage the quality as well as the process using the binary mask, and the thermal expansion and the alignment accuracy of the gray level mask are difficult. To compensate for the problem, it is necessary to modify the exposure apparatus and change the equipment. For this reason, manufacturing a microstructure using a gray-level mask is not a very economical solution, although it saves man-hours.

Therefore, in the present invention, when mass-producing a fine structure having a fine shape such as a curved surface, a surface having an arbitrary angle, and a multi-stage structure, the accuracy is stable and the handling is easy. An object of the present invention is to use a binary mask and to enable manufacturing without increasing the number of steps. It is another object of the present invention to provide a method of manufacturing a fine structure capable of manufacturing high-accuracy products with good yield in a short time. It is another object of the present invention to provide a manufacturing method capable of easily manufacturing a fine structure using a processing apparatus using an existing binary mask and supplying the fine structure at low cost.

[0009]

For this reason, in the present invention, instead of making the mask itself a multi-gradation, the mask has two gradations.
By forming a pattern smaller than the resolution determined by at least one of the processing device, the workpiece, and the processing medium on the binary mask, a gray scale can be output on the workpiece. Of the on / off patterns of the binary mask, a pattern smaller than the minimum resolution of a processing system by a processing apparatus or the like, for example, the on / off of dots, is not reproduced on a workpiece such as a substrate as it is. However, the on / off ratio of a pattern smaller than the minimum resolution is reflected on the workpiece as shading. It can be said that a pattern smaller than the minimum resolution of the binary mask is blurred and projected on the workpiece. Also, considering the resolution of the processing apparatus, the diffracted light by the binary mask pattern smaller than the minimum resolution is
It can also be said that only the 0th-order light is selected by the processing apparatus and is reflected on the workpiece, thereby forming an image whose density varies continuously due to the termination effect. Also, of the diffracted light,
Since high-order diffracted light that forms an edge is not reflected in the image, an image is formed using only low-frequency components. For this reason, it can also be said that an image with continuous shading is formed using the binary mask. For example, even in an image forming apparatus such as an image display device or a printer capable of only binary expression, it is possible to express a gray scale because the dot pitch has become smaller than the resolution of human eyes, An image of a grace case (multi-gradation) expression is output by a method such as a dither pattern method, an error dispersion method, or a dot gradation method.

In the field of photolithography processing technology using a mask, which has been mainly developed in semiconductor manufacturing, technological innovation has been made in the direction of how accurately a pattern formed on the mask is reflected on a workpiece. Therefore, it has been considered to increase the resolution of a lens system or the like in an exposure system processing apparatus, and to use a light beam having a short wavelength, for example, blue light or an X-ray having a shorter wavelength, and to form a fine structure. Equivalent technology is used. When forming a structure with a continuously changing depth or a structure with a multi-step depth change by photolithography, use a gray mask (gray level mask) that itself expresses multiple gradations. Reflecting the state of the gray mask on the workpiece as it is is just an extension of the conventional photolithography technology.

On the other hand, in the present invention, although the control is performed by the pattern formed on the mask, a pattern different from the pattern formed on the mask is intended to be output on the workpiece as a result. This is completely different from the conventional photolithography technology. That is, the present invention provides a microstructure for processing a workpiece into a fine shape by a processing apparatus using a binary mask capable of controlling a transmission amount of a processing medium in which a processing effect on the workpiece is accumulated in two stages. A binary mask for controlling a transmission amount of a processing medium for processing a fine shape with a pattern smaller than a minimum resolution determined by at least one of a processing apparatus, a workpiece, and a processing medium, is set in the processing apparatus. This is a method for manufacturing a microstructure having a step of processing a workpiece. To form a microstructure that changes in one-dimensional direction, a pattern such as a slit may be used.
In order to form a microstructure that changes in the dimensional direction, it is most preferable that the pattern be on / off of dots in area units smaller than the minimum resolution determined by at least one of the processing device, the workpiece, and the processing medium. Desirably, the transmission rate of the processing medium can be controlled by the area ratio.

As a method of controlling the dot on / off area ratio to output a gray pattern, a known image technique can be used. A dither pattern method or an error diffusion method can be used to control the transmittance by turning on and off the dots within a predetermined area or an area having an influence. Also, by changing the area of each dot, which is sometimes referred to as dot gradation,
It is also possible to control the off-area ratio and consequently the transmittance.

[0013] The method of manufacturing a microstructure according to the present invention includes a step of forming a pattern formed by arc-shaped lines repeated at a pitch smaller than a minimum resolution determined by at least one of a processing apparatus, a workpiece, and a processing medium. It is also desirable to control the transmission amount of the processing medium by using a binary mask having a variable width of each line forming a pattern. Further, it is desirable that the arc-shaped line forming the pattern is formed by using a part of a spiral or concentric curve.

A binary mask suitable for the manufacturing method of the present invention, that is, a binary mask which is set in a processing apparatus and can control a transmission amount of a processing medium in which a processing effect on a workpiece is accumulated in two stages. The present invention also includes a binary mask that controls the transmission amount of the processing medium by using a pattern smaller than a predetermined minimum resolution. As described above, considering a microstructure whose structure changes in a two-dimensional direction, as described above, the on / off of dots of an area unit smaller than the minimum resolution of the processing apparatus, the workpiece, and / or the processing medium is considered. Desirably, the transmission rate of the processing medium can be controlled by the area ratio. The ON / OFF of the dots can be determined by a dither pattern method or an error diffusion method, and the area of the dots may be changed.

Further, as a binary mask suitable for the manufacturing method of the present invention, a pattern constituted by arc-shaped lines repeated at a pitch smaller than a minimum resolution determined by at least one of a processing apparatus, a workpiece, and a processing medium. It is also desirable to use a binary mask that controls the transmission amount of the processing medium by changing the width of the line.
As described above, it is desirable that the arc-shaped line forming the pattern is formed using a part of a spiral or concentric curve.

In the present invention, since the pattern is formed by using an arc-shaped line, specifically, a part of a spiral or concentric curve, the drawing medium is rotated while rotating the base material of the binary mask. A pattern can be formed by controlling the position of (for example, laser light) in one direction. According to the pattern drawing by such a rotary scanning system, high-accuracy and high-speed position control can be realized relatively easily. For example, a higher-resolution binary mask can be manufactured in a shorter time than when a plurality of straight lines are arranged in a grid and drawing is performed by reciprocating a laser beam.

Further, a method of manufacturing a binary mask according to the present invention, that is, a binary mask which is set in a processing apparatus and which can control a transmission amount of a processing medium in which a processing effect on a workpiece is accumulated in two stages. A manufacturing method, wherein a transmission amount of a processing medium for performing a desired fine processing is an on / off area ratio of a dot having an area unit smaller than a minimum resolution determined by at least one of a processing apparatus, a processing object, and a processing medium. The present invention also includes a method of manufacturing a binary mask having a step of converting the dots into dots and forming those dots on the binary mask. As described above, the dot area ratio can be determined by the dither pattern method or the error diffusion method, and the dot area may be changed.

Further, as a method of manufacturing a binary mask according to the present invention, a method of manufacturing a binary mask capable of controlling a transmission amount of a processing medium, which is set in a processing apparatus and accumulating a processing effect on a workpiece, in two stages. A method comprising: converting a transmission amount of a processing medium for performing a desired fine processing into a width of an arc-shaped line repeated at a pitch smaller than a minimum resolution determined by at least one of a processing apparatus, a workpiece, and a processing medium. And forming the lines on a binary mask.
A method of manufacturing a value mask is also included in the present invention. The arc-shaped line is desirably formed using a part of a spiral or concentric curve. It is desirable that the width of the arc-shaped line forming the pattern is controlled by scanning the laser light in an arc shape and changing the intensity of the laser light.

The method for manufacturing a microstructure using the mask of the present invention is not limited to the manufacturing method using an exposure method including light or an electron beam, but also manufactures a microstructure by depositing atoms or molecules using a deposit or the like. It can be applied to the case. However, as a processing apparatus, a light-sensitive member, for example, in the visible light region, using a photoresist, most often to produce a fine structure using an exposure apparatus that exposes an image, the present invention, It is the best manufacturing method to apply. In the present invention, a binary mask can be used as a mask to be set in the exposure apparatus. It can be flexibly processed into a shape having a curved surface and a shape having a curved surface.

Therefore, according to the manufacturing method of the present invention,
By using one or a few binary masks, the workpiece can be processed into a fine shape designed at a desired angle such as a slope, a curved surface, or a multi-step shape. For this reason,
As for the number of manufacturing steps, as in the case of manufacturing using a gray level mask, the process of irradiating a processing medium such as light or an electron beam with one or a small number of steps can be completed, and the mask is replaced. An increase in error due to an increase in man-hours can be prevented.

Further, in the manufacturing method of the present invention, a binary mask is used to process a gray scale structure.
The alignment mark can be formed similarly to a conventional binary mask, and can be detected by a similar method. Therefore, the alignment accuracy of the mask is extremely high, and since it is essentially a binary mask, it can be set in a conventional or existing technology-provided exposure apparatus to provide a grayscale fine pattern with sufficient accuracy. The structure can be processed. Therefore, it is economical, has high compatibility with existing processing equipment, and has no problem in combination with existing photolithography technology.

Further, since it is a binary mask, the conventional binary mask is used.
Like the value mask, it can be provided as a reflection type mask such as chrome plating, and it is possible to prevent a situation in which light is absorbed and thermally expanded like a gray level mask. Therefore, the accuracy of the mask itself is increased, and the temperature control of the mask is also facilitated. For this reason, it is not necessary to develop a new exposure apparatus in which the heat treatment and the like are further strengthened in order to maintain a certain accuracy. Therefore, by using the manufacturing method and the binary mask of the present invention, a structure having a fine structure can be manufactured and supplied economically, in a short time, and with a high yield.

As described above, the present invention can be applied to various manufacturing processes using a mask in a processing apparatus for manufacturing a curved surface or the like, for example, various manufacturing processes such as sputtering. It is suitable for a manufacturing method using light such as an electron beam. The resolution (minimum resolution) of the exposure apparatus can be expressed by λ / NA using the wavelength λ of the light source and the aperture NA of the lens of the imaging system of the stepper (exposure apparatus). Therefore, if the minimum resolution of the exposure apparatus controls the exposure system, it is desirable that the dot pitch P of the binary mask satisfies the following expression (1).

P <λ / NA (1) In a range satisfying the expression (1), only the zero-order light by the dots of the mask forms an image on the object to be processed and is accumulated on the object to be processed. Higher order light has no processing effect. Therefore, the dot pattern of the binarized mask is not reproduced as it is, but the intensity depends on the binary pattern. However, based on a smooth exposure intensity distribution, a multi-valued shape, a curved surface, or the like is consequently obtained. Is processed.

Similarly, if the minimum resolution of the exposure apparatus controls the exposure system, it is desirable that the pitch P of the lines forming the pattern of the binary mask satisfies the following equation (4).

P <λ / NA (4) If the range satisfies the expression (4), only the zero-order light generated by the dots of the mask forms an image on the object to be processed and is accumulated on the object. Higher order light has no processing effect. Therefore, the line pattern of the binarized mask is not reproduced as it is, but the intensity depends on the binary pattern. However, based on the smooth exposure intensity distribution, the resulting multi-valued shape, curved surface, etc. Is processed.

The minimum resolution may not be determined only by the resolution (λ / NA) of the exposure apparatus. For example,
The resolution also changes depending on the resolution of the photosensitive member (photoresist). Therefore, the minimum resolution can be controlled (controlled) by selecting a photoresist having an appropriate resolution in consideration of the characteristics of the photoresist.

A wide variety of microstructures can be manufactured by the manufacturing method of the present invention. For example, the photoresist may be the microstructure itself, or the photoresist applied on the substrate may be finely processed, and the finely patterned photoresist may be used as a mask to perform etching or the like to obtain the final fine structure. The body may be manufactured.

For example, when the present invention is applied to manufacture a reflector used as a reflector of a liquid crystal display device,
A reflector can be manufactured by applying a reflective member such as aluminum to the processed photoresist. It is also possible to obtain a reflector having a desired shape by using a reflective member such as aluminum as a substrate and etching the resultant through a finely processed photoresist. Further, it is also possible to obtain a reflector by coating a microfabricated substrate with a reflective material.

As described above, the reflector obtained by using the manufacturing method of the present invention is not limited to a simple concave-convex reflector, but the light distribution is enhanced, and optimization to a shape having high light use efficiency is advanced. It is possible to provide a reflector having a predetermined shape, for example, a reflector having a curved surface or a slope, and by mass-producing the reflector, it is possible to provide a reflector having high reflection performance at low cost.

[0031]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a mobile phone as a terminal device equipped with a reflective liquid crystal panel.
The mobile phone 1 of this example employs a reflective liquid crystal panel 10 as a data display panel, and can display an image in a bright place using natural light or illumination light 70 from above as a light source. Therefore, the backlight of the liquid crystal panel can be omitted or the time required for the backlight can be reduced, so that the portable telephone is a thin and power-saving type.

For this reason, the liquid crystal panel 10 of this embodiment has a configuration in which a liquid crystal layer (cell) 12 and a layer (reflector) 20 serving as a reflective electrode are laminated. Reflective layer (reflector) 2 of this example
Reference numeral 0 is made of aluminum, as shown in FIG. 2, and has a reflecting surface 21 on which a plurality of fine irregularities formed of curved surfaces are arranged when viewed in cross section. The liquid crystal cell 12 is
When the external light 71 that has passed through the reflecting surface 21 enters the reflecting surface 21
And emits the outgoing light 72 in the direction of the liquid crystal cell 12 again. As a result, in the liquid crystal panel 10 of the present example, a desired image displayed on the liquid crystal
Can be seen. As the liquid crystal panel, a liquid crystal panel that is bright, has good color reproducibility, and has high display performance is always required. In the liquid crystal panel 10 of this example, light is incident by appropriately controlling the reflection direction of the reflection surface 21. The use efficiency of the light 71 is improved, and it is possible to provide a bright liquid crystal panel with high display performance and low power consumption without using a backlight.

In order to obtain a desired reflecting surface 21 that enhances the light distribution of the reflected light 72, the shape of the reflector 20 is optimized to satisfy various conditions. Therefore, the reflector 2
On the side of the surface 21 of 0, a desired fine shape is formed in units of microns or submicrons instead of simple hemispherical irregularities. For example, in order to efficiently reflect the light 71 from above toward the front, the inclination of the upward facing surface is gentle with respect to the downward facing surface, and the user's eyes 90
A large area for reflecting light in the direction is secured. Also,
Although not shown, the cross section in the horizontal direction of the reflection surface 21 is a hyperboloid or paraboloid such that light incident from the side is not reflected to the side but is reflected in the direction of the user's eye 90. . Then, in order to form the reflecting surface 21 having irregularities suitable for efficiently reflecting light, first, a basic shape excellent in predetermined reflection characteristics is determined, and some similar shapes similar to the basic shape are determined. A process of generating these similar shapes at random positions on the reflection surface 21 of the reflector 20 is adopted.

FIG. 3 is a flowchart showing an outline of the process. First, in step 91 of FIG. 3, a basic shape having a desired reflection characteristic is determined, and the shape of the surface (reflection surface) of a reflector in which similar shapes are randomly arranged is determined by numerical calculation or the like. The surface shape becomes a fine shape 28 having a curved surface as shown in FIG. Next, in step 92, as shown in FIG. 4B, an exposure amount necessary for processing the fine shape 28 is determined for each appropriate unit area A. The unit area A for obtaining the exposure amount is desirably small if the fine shape 28 is synthesized as close to a curved surface as possible. On the other hand, if the desired performance can be ensured even with a multi-stage digital surface set, the larger the unit area A for obtaining the exposure amount, the smaller the calculation amount.

FIG. 5 shows a general exposure apparatus 100 as a processing apparatus using a mask. This exposure apparatus 10
Reference numeral 0 denotes a light source 101, a condenser lens 102 that converts light 99 having a wavelength λ emitted from the light source 101 into a parallel light beam, a holding table 103 that holds the mask 60, and a stage that transmits the light 99 transmitted through the mask 60. A projection lens 104 for forming an image on the workpiece 82 above the projection 106 is provided. Therefore, when the substrate 81 coated with the photoresist is set on the stage 106, the photoresist is exposed to the light 99 transmitted through the mask 60 as the workpiece 82, and is finely processed.

In such an exposure apparatus 100, assuming that the aperture of the pupil plane 105 of the projection lens 104 is NA and the wavelength of the light 99 is λ, the resolution (minimum resolution) D is represented by λ / NA. Therefore, if the area unit A for which the exposure amount is determined in step 92 is smaller than the minimum resolution D and the mask 60 capable of adjusting the exposure amount in that unit is used, an image cannot be formed on the photoresist 82 in the area unit A.
Therefore, it is possible to continuously change the transmission amount of the light 99 applied to the photoresist 82, and FIG.
A fine shape close to a curved surface as shown in FIG. On the other hand, if the area unit A for obtaining the exposure amount is larger than the minimum resolution D,
It is possible to digitally control the transmission amount of the light 99 applied to the photoresist 82 in the unit of area A. Accordingly, the photoresist 82 can be exposed to a multi-step fine shape as shown in FIG.

Returning to FIG. 3, when the exposure amount is obtained in the desired area unit A, in step 93, a mask (binary mask in this example) 60 set in the exposure apparatus 100 is set for each area unit A. An on / off area ratio corresponding to the exposure amount is determined. Then, in the mask 60 of the present example, as shown in FIG. 4C, the on / off area ratio is expressed by dots 61 having a size smaller than the minimum resolution D of the exposure apparatus 100 and a pitch P.

There are two methods for controlling the amount of exposure in multiple values by turning on and off the dots 61. One is FIG. 4 (c)
As shown in FIG. 7, a method of changing the density of dots 61 having the same size is known, such as a dither pattern method or an error diffusion method. These methods are known as a technique for displaying gray in image processing,
Detailed description is omitted. The other one is to change the size of the dot 61 without changing the dot density, as shown in FIG. 4D, and is called by a name such as dot gradation.

As described above, the minimum resolution D of the exposure apparatus 100 having an imaging system with the projection lens 104 is λ /
NA. Therefore, the dots 61 formed at the pitch P smaller than the minimum resolution D are not projected on the workpiece 82 with the same shape. Therefore, if the pitch P of the dots 61 is set so as to satisfy the following expression (1), the dots 61 of the mask 60 are not projected as they are on the photoresist as the workpiece 82, Only the shading is controlled by the density or size of the dots 61, that is, by the on / off area ratio.

P <λ / NA (1) This phenomenon is caused by the binary mask 6 as schematically shown in FIG.
Of the diffracted light by 0, only the 0th-order light 99a is the imaging lens 1
This can be explained by condensing at 05 and not collecting the higher-order light 99b and excluding the higher-order light 99b as a noise component. In other words, considering that the light other than the zero-order light is not swallowed by the lens, the diffraction angle θd of the first-order light 99b is expressed by Expression (2), where n is the refractive index of the medium.

P · sin θd = λ / n (2) Further, the half angle of the aperture angle on the image side of the imaging lens is represented by θc.
Then, the condition under which diffracted light does not enter the lens is expressed by the following equation (3). Where 0 <θd <π / 2, 0 <θ
The range is c <π / 2.

Θd> θc (3) Therefore, if the condition of the expression (2) is put in the expression (3), the expression (1) is obtained as follows.

P <λ / n · sin θc (= λ / NA) (1) Thus, the pitch P of the dots 61 of the binary mask 60
Is smaller than or equal to the minimum resolution D of the exposure apparatus 100, the shape of the dot 61 itself is not projected onto the photoresist 82, and only the intensity distribution mainly determined by the zero-order light 99a is reflected on the photoresist 82. Is done. That is, the edge component that defines the shape of the dot 91 is modulated in the frequency space as a higher-order component of primary light or higher, but the higher-order component can be cut by the resolution (aperture) of the lens system. , The shape of the dots 61 can be removed, and only the shading can be extracted and irradiated to the photoresist 82.

FIG. 7 shows the disturbance of the intensity distribution on the photoresist surface with respect to the dot interval P. As can be seen from the figure, in a region where the dot interval P is smaller than λ / NA, there is almost no disturbance in the intensity distribution, and only a change in shading appears. On the other hand, when the dot interval P is λ /
If it is larger than NA, the dot shape itself will be projected as noise, which is manifested as disturbance in the intensity distribution on the photoresist surface.

As described above, although the transmission amount does not always correspond to 0% and 100%, even in the case of the binary mask 60 which can be controlled to two values of the transmission amount to be turned on and the transmission amount to be turned off. By setting the pitch P of the dots 61 to be equal to or less than the minimum resolution D of the exposure apparatus 100, the dots 61 are not projected on the photoresist 82 as they are, but are exposed at an intensity distribution controlled by the area ratio of the dots 61. Light 90 is applied to the photoresist 82. Therefore, the photoresist 82 does not have the shape of the dots 61 but the transmission amount (exposure amount) controlled by the on / off area ratio of the dots 61.
When the area unit A for which the exposure amount is obtained is equal to or less than the minimum resolution D, a fine shape having a substantially curved surface or a surface whose thickness continuously changes is processed.
If the unit area A for which the exposure amount is obtained is equal to or greater than the minimum resolution D, a multi-step shape can be manufactured using one mask 60.

Furthermore, the minimum resolution D is
May not be determined only by the resolution (λ / NA).
For example, the resolution of the exposure system may change depending on the resolution of the photoresist 82. In such a case, the minimum resolution can be controlled by selecting a photoresist having an appropriate resolution. In any case, the pattern formed on the mask 60 is not exposed and formed on the photoresist 82, which is a workpiece, as it is, and therefore, a processing method or manufacturing using a conventional binary mask or gray level mask is used. It is very different from the method.

Then, as a result, by the binary mask 60,
A multi-valued shape, a curved surface, or the like can be exposed on the photoresist 82, and by developing the same, a wide variety of fine shapes can be formed on the photoresist 82 very easily. That is, step 91 and FIG.
The curved fine shape 28 designed in (a) is obtained by the binary mask 60. In this example, for example, the binary mask 60 is manufactured so that the minimum dot size is 0.2 μm square, and is set in an exposure apparatus having a minimum resolution of 1 μm, and the workpiece (photoresist material) 82 is set. When exposed, the exposed workpiece does not reproduce an image in units of 0.2 μm, but the exposure energy density in units of 1 μm must be controlled in accordance with the optimal exposure amount calculated in advance (see FIG. 4B). Is possible. Therefore, at least 1μ
It is possible to form a multi-valued shape having a thickness (depth) of about m and a fine structure having a curved surface or a slope whose thickness or depth continuously changes in a range less than that.

In the binary mask 60 of this embodiment, transparent dots 61 may be formed on the surface 62 which has been made reflective by chrome plating or the like to control the amount of transmission. It may be formed to control the amount of transmission. In any case, the exposure light 99 output from the light source 101 is used.
Of the light 99 can be controlled by reflection or transmission in the mask 60, so that the light 99 is rarely converted into heat inside the mask 60, and the photoresist 82 is formed on the photoresist 82 with a stable and highly accurate mask having little thermal expansion. Grayscale shapes can be exposed.

As described above, it is possible to manufacture the binary mask 60 capable of exposing the photoresist 82 to a desired fine shape having a multi-valued or continuously changing thickness.
In step 94 shown in FIG. 5, the binary mask 60 of the present example is set on the mask holder 103 of the exposure apparatus 100 for binary mask shown in FIG. In the mask 60 of this example, an alignment mark for alignment can be formed in a step of forming a mask pattern of the binary mask 60, that is, in a step of manufacturing the dots 61. Therefore, the alignment mark is a binary mark of reflection and transmission as in the conventional binary mask. Therefore, the alignment can be adjusted by the conventional exposure apparatus 100 or the same method. Then, the photoresist 82 exposed in step 95 is developed to form a fine structure. Further, when a performance that cannot be realized by a photoresist such as a reflective property is required, in step 96, a desired characteristic is provided by a method such as molding or etching using the photoresist 82 processed into a desired fine shape. A structure having a fine shape is manufactured.

FIGS. 8 and 9 show an outline of a process of manufacturing a reflector by the manufacturing method of this embodiment. FIG. 8 (a)
As shown in (1), light is irradiated from above through the binary mask 60 of this example, and the photoresist 82 applied on the aluminum substrate 86 is exposed. The photoresist 82 on the substrate 86 includes the dots 6 formed on the binary mask 60.
A gray level shape controlled by an on / off area ratio of 1, that is, an aperture ratio is exposed. And FIG.
As shown in (b), when developed, the exposed shape appears. In the case of a negative resist, the portions not exposed to light are dissolved in the developing solution. Therefore, upon development, the portions not exposed to the light were washed away, and the cross-section was processed into a reflective shape 82a having curved surface irregularities. A photoresist layer 82 is obtained.

Further, the aluminum substrate 86 is dry-etched with a suitable etchant via the photoresist layer 82. As a result, the shape of the photoresist layer 82 is transferred to the aluminum substrate 86, and as shown in FIG. Obtainable.

If the substrate is not a reflective substrate, as shown in FIG. 9, a photoresist layer 82 is applied to a substrate 81 of an appropriate material, exposed and developed as in FIG.
When etching is performed, as shown in FIG. 9B, a substrate 81 whose surface is processed into a desired uneven shape can be obtained.
Therefore, by coating this surface with a reflective film 83 of aluminum or the like, it is possible to obtain a reflector 20 having a reflecting surface 21 having a desired shape, as shown in FIG. 9C.

Further, a reflective film having a desired shape is also obtained by coating or coding a reflective metal such as aluminum on the photoresist layer developed into a desired shape by the mask 60 and then removing the photoresist layer. be able to. As described above, in the manufacturing method of the present example, the reflector 20 having a complicated fine shape can be manufactured by various methods by processing the photoresist layer into a multi-valued or gray-scale shape. In the step of processing a fine shape using the binary mask 60, it is possible to expose a complicated fine shape with one binary mask 60, and it is not necessary to use a large number of masks. It can be short and has high product accuracy and high yield. Further, since the gray level structure can be exposed by the reflective binary mask 60, the mask absorbs less heat and there is no error due to thermal expansion as compared with the gray level mask. Since the alignment mark becomes the same as that of the conventional binary mask, the mask 60 can be set in the exposure apparatus 100 by the same method as the conventional one.
If there is no problem in the resolution, it becomes possible to process a multi-valued or gray-level fine structure at the micron or sub-micron level using the conventional exposure apparatus 100.
For this reason, according to the manufacturing method of this example, the reflective layer (reflector) 20 having a fine and complicated three-dimensional structure can be easily manufactured at low cost and with high yield as designed. Therefore, it is possible to mass-produce the reflection layer 20 having high reflection efficiency and the liquid crystal panel 10 including the same at a lower cost.

When manufacturing not only the reflector 20 having the curved reflecting shape 28 but also a fine structure, fine processing is performed using a mask based on a photolithography technique using an exposure apparatus. Has been considered and implemented. When the structure is miniaturized, the pattern formed on the mask to realize the structure becomes finer, and the resolution of the exposure apparatus is also increased so that the fine pattern can be accurately projected on the workpiece. The technology is progressing.
For example, in an exposure apparatus 100 as shown in FIG.
The light beam that accumulates the processing effect on the workpiece is blue or X
A projection lens that swallows and projects high-order diffracted light is used in order to employ a line or other short-wavelength light and faithfully reproduce the edge. Therefore, in order to express a multi-valued fine structure, a large number of binary masks having different patterns are prepared, and the number of steps is increased in order to perform exposure through a multi-step process, and errors in mask alignment are also added. Therefore, the manufacturing efficiency cannot be increased, and it is difficult to improve the yield.

The gray level mask has a gray level pattern, and the gray level can be exposed once or a small number of times. However, it is the same as the above-described method in that the mask pattern is directly formed on the photoresist. . On the other hand, as described above, problems such as difficulty in alignment and difficulty in heat treatment, which are not present in the binary mask, occur.

On the other hand, the manufacturing method of this embodiment forms a fine pattern exceeding the minimum resolution on the mask so that the pattern itself is not exposed. This is completely different from the conventional idea of exposing a photoresist to a photoresist.
The manufacturing method of this example can dramatically expand the field of application of the binary mask to the processing of a gray-level fine structure. Therefore, there is no problem associated with the gray level mask, and there is no problem when using a large number of binary masks. And since it is basically a processing method using a binary mask, it is possible to utilize manufacturing machines, manufacturing equipment, accumulated know-how, skills, etc. related to processing technology using a past binary mask. Is very economical.

By the way, in the above description, a pattern having a pattern of ON / OFF of a dot in a predetermined area unit has been described.
The value mask is formed, and the transmission amount of the processing medium is controlled by the on / off area ratio of the dot. However, in a binary mask having a pattern constituted by arc-shaped lines repeated at a predetermined pitch, By varying the width of the arc-shaped line, the transmission amount of the processing medium can be controlled. Hereinafter, the details will be described.

FIG. 10 is a flow chart showing an outline of a manufacturing process of a reflector when another embodiment of the present invention, specifically, a binary mask having a pattern constituted by arc-shaped lines is used. is there. The difference from the flowchart shown in FIG. 3 is that the content of step 93 is changed to the content of step 93a. In the following description, description will be made mainly focusing on the difference between the two.

In step 91 in FIG. 10, the shape of the surface (reflection surface) of the reflector is determined according to the desired reflection characteristics. The surface shape becomes a fine shape 28 having a curved surface as shown in FIG. Next, in step 92, as shown in FIG.
The exposure amount necessary for processing No. 8 is determined for each appropriate unit area A.

When the exposure amount is obtained in the desired area unit A, in step 93a, an on / off area ratio corresponding to the exposure amount is determined for each area unit A in the binary mask set in the exposure apparatus 100. The width of the line is determined accordingly. In the binary mask of this embodiment, the transmittance distribution shown in FIG. 11C is represented by a line 161 where the area ratio of the transmission portion is repeated at a pitch smaller than the minimum resolution D of the exposure apparatus 100. For example, when the fine shape 28 is approximately spherical, the pattern of the line 161 on the binary mask is expressed in two dimensions as shown in FIG. Here, the line (black part) is the light shielding part 62 (off)
Is shown.

As described above, the minimum resolution D of the exposure apparatus 100 having an imaging system having the projection lens 104 (see FIG. 5) is λ / NA. Therefore, the line 161 formed at the pitch P smaller than the minimum resolution D is not projected on the workpiece 82 in the same shape. Therefore, line 1
If the pitch P of 61 is set so as to satisfy the following equation (4), the line 161 of the binary mask is
Is not projected as it is on the photoresist, and only the shading is the density or width of the line 161, ie,
It is controlled by the on / off area ratio.

P <λ / NA (4) This phenomenon occurs because only the zero-order light 99a of the diffracted light by the binary mask 160 is collected by the imaging lens 105 as schematically shown in FIG. It can be explained that the light is emitted and the higher-order light 99b is not collected, and the higher-order light 99b is removed as a noise component. The pitch P of the line 161 of the binary mask 160 can be represented by the following equation (5). Note that the derivation process of Expression (5) is the same as that of Expression (1) described above, and a detailed description thereof will not be repeated.

P <λ / n · sin θc (= λ / NA) (5) Thus, the pitch P of the line 161 of the binary mask 160
Is not more than the minimum resolution D of the exposure apparatus 100, the shape itself of the line 161 is not projected on the photoresist 82, and only the intensity distribution mainly determined by the zero-order light 99a is reflected on the photoresist 82. Is done. That is, line 16
The edge component that defines the shape of No. 1 is modulated into the frequency space as a higher-order component higher than the primary light, but the higher-order component can be cut by the resolution (aperture) of the lens system, and the line 161 Is removed and only the shading is extracted and the photoresist 82 can be irradiated.

FIG. 13 shows the disturbance of the intensity distribution on the photoresist surface with respect to the pitch (line interval) P of the line pattern. As shown in FIG. 13, in a region where the pitch P is smaller than λ / NA, there is almost no disturbance in the intensity distribution, and only a change in shading appears. On the other hand, when the pitch P is λ /
If the value is larger than NA, the line shape itself is projected as noise, which is manifested as disturbance in the intensity distribution on the photoresist surface.

As described above, although the transmission amount does not always correspond to 0% and 100%, even the binary mask 160 which can be controlled to have two values of the transmission amount to be turned on and the transmission amount to be turned off. , By setting the pitch P of the lines 161 to be equal to or less than the minimum resolution D of the exposure apparatus 100, the lines 161 are not projected onto the photoresist 82 as they are, but are exposed with an intensity distribution controlled by the line width of the lines 161. Light 99 is irradiated on the photoresist 82. Therefore, the photoresist 82 is processed using light having a transmission amount (exposure amount) controlled not by the shape of the line 161 but by the width of the line 161 as a processing medium, and the area unit A for which the exposure amount is obtained is equal to or less than the minimum resolution D. In this case, a fine shape having a substantially curved surface or a surface whose thickness continuously changes is processed. If the unit area A for which the exposure amount is obtained is not less than the minimum resolution D, a multi-step shape can be manufactured using one mask 160.

Further, the minimum resolution D is
May not be determined only by the resolution (λ / NA).
For example, the resolution of the exposure system may change depending on the resolution of the photoresist 82. In such a case, the minimum resolution can be controlled by selecting a photoresist having an appropriate resolution. In any case, a conventional processing method using a binary mask or a gray-level mask in that the pattern formed on the binary mask 160 is not exposed and formed on the photoresist 82 as a workpiece as it is. Or, it is significantly different from the manufacturing method.

By using the binary mask 160 of this embodiment, it is possible to expose the photoresist 82 to a multivalued shape, a curved surface, or the like. Various fine shapes can be formed very easily. That is, the curved fine shape 28 designed in step 91 and FIG. 11A is obtained by the binary mask 160.

For example, the binary mask 160 is manufactured so that the pitch of the lines 161 on the binary mask 160 is 0.6 μm, and the binary mask 60 is set in an exposure apparatus having a minimum resolution of 2 μm, and the workpiece (photoresist material) ) When 82 is exposed,
An image of 0.6 μm unit is not reproduced on the exposed workpiece, and the optimum exposure amount calculated in advance (FIG. 11B)
It has been confirmed that it is possible to control the exposure energy density in units of 2 μm.
Therefore, it is possible to form a multi-valued shape having a thickness (depth) of at least about 1 μm and a thickness or a fine structure having a curved surface or a slope whose thickness or depth continuously changes in a range less than that.

Next, the manufacturing process of the binary mask 160 having a pattern constituted by arc-shaped lines will be described. First, a light shielding layer is formed on the surface of quartz glass 100 by sputtering chromium, and a photoresist is spin-coated thereon. Thereafter, exposure is performed along the line 161 with a laser beam or an electron beam at an exposure amount corresponding to the width of the line 161.

More specifically, as schematically shown in FIG. 14, the mask 160 is rotated on a rotary table in the same manner as in a master disk manufacturing technique such as a CD or DVD.
A spiral beam 111 is drawn by moving a small beam (laser beam) in one direction along the radial direction of the table with a slider, thereby drawing a spiral curve 111, and an arc-shaped line included in the predetermined region 119. Is cut out, a binary mask 160 can be formed. Alternatively, as schematically shown in FIG. 15, a binary mask may be formed by drawing a concentric circle 112 and using an arc-shaped line included in the predetermined area 119. In any case, step 93 is performed according to the position on the photoresist surface.
Exposure is performed while modulating the exposure amount necessary to form the width of the line 161 determined in a.

Then, after developing the photoresist, the amount of transmission can be controlled by forming transparent lines 161 on the light-shielding layer which has become reflective by removing chromium by etching. Most of the exposure light 99 output from the light source 101 can be controlled by being reflected or transmitted by the binary mask 160, so that the light 99 is rarely converted into heat inside the binary mask 160, The photoresist 82 can be exposed to a grayscale shape with a stable and highly accurate mask with little expansion or the like.

As described above, it is possible to manufacture the binary mask 160 capable of exposing the photoresist 82 to a desired fine shape having a multi-valued or continuously changing thickness, so that step 94 shown in FIG. The binary mask 160 is set on the mask holder 103 of the binary mask exposure apparatus 100 shown in FIG. 5, and exposure is performed after alignment adjustment. In the binary mask 160 of this embodiment, an alignment mark for alignment can be formed in a step of forming a mask pattern of the binary mask 160, that is, in a step of forming the line 161. Therefore, the alignment mark is a binary mark of reflection and transmission as in the conventional binary mask. Therefore, the conventional exposure apparatus 1
It is possible to adjust the alignment in 00 or the same way. Then, the photoresist 82 exposed in step 95 is developed to form a fine structure. Further, when a performance that cannot be realized by a photoresist such as a reflective property is required, in step 96, a desired characteristic is provided by a method such as molding or etching using the photoresist 82 processed into a desired fine shape. A structure having a fine shape is manufactured.

Although the manufacturing method of the present invention has been described above by taking as an example a process of manufacturing a reflector included in a liquid crystal panel, the fine structure that can be manufactured by the manufacturing method of the present invention is a reflector. However, the present invention is not limited to this. Many structures that require high-precision microstructures, such as semiconductor substrates, optical switching elements, microelectronic mechanical systems (MEMS), diffraction gratings, holograms, microlens substrates, Fresnel lens substrates, and optical communication devices It can be manufactured by the manufacturing method of the present invention.

Further, in the above description, an example is shown in which the workpiece itself processed by the binary mask is used as a product or the etching is controlled by the workpiece, but the workpiece processed by the binary mask is shown. The present invention can also be applied to a case where a microstructure is manufactured by another manufacturing method using the method. For example, the present invention can be applied to a manufacturing method called a micro replica (transfer type) technology. In this case, a microstructure is provided by using a workpiece or a transfer mold manufactured using the workpiece as a prototype. Products can be molded.

The present invention is not limited to a manufacturing method using an exposure apparatus using light as a processing medium, but includes all methods using a binary mask, including a method of manufacturing a fine structure by depositing particles by a deposit or the like. It can be applied to a manufacturing method.

[0076]

As described above, according to the present invention, the processing apparatus, the workpiece, and the processing are provided in the binary mask in which the processing effect based on the transmission amount of the processing medium supplied to the workpiece is accumulated. A pattern smaller than the minimum resolution determined by at least one of the media, in particular, dots on and off with a pitch smaller than the minimum resolution are formed so that a multi-valued or gray-level structure can be manufactured by a binary mask. . Therefore, by the manufacturing method of the present invention,
Using one or a small number of binary masks, a structure having a fine shape such as a slope, a curved surface, or a multi-step shape can be manufactured. For this reason, the same multivalued shape as that manufactured by using the gray level mask can be formed in a small number of times, so that the number of steps for irradiating the processing medium can be significantly reduced, and the number of steps can be reduced. The yield can be reduced and the yield can be improved. At the same time, since the gray level can be processed using the binary mask, it is possible to eliminate the error due to thermal expansion and the error due to the detection of the alignment mark, which are a concern in the gray level mask, thus improving the yield. can do.

Further, according to the present invention, it is possible to use an existing processing apparatus for processing using a conventional binary mask or to easily cooperate with an existing processing method, and to perform the processing at a micron level, a submicron level or lower. It is possible to economically mass-produce and supply a wide variety of structures having a fine structure of the same level.

[Brief description of the drawings]

FIG. 1 is a diagram showing an outline of a mobile phone provided with a reflective liquid crystal panel using a reflective layer (reflector) according to the present invention.

FIG. 2 is a perspective view showing an outline of the reflector according to the present invention shown in FIG.

FIG. 3 is a flowchart showing a manufacturing process of the reflector according to the present invention.

FIG. 4 is a diagram for explaining the fabrication of a binary mask used in the manufacturing process shown in FIG. 3; FIG. 4A shows an example of a multivalued fine shape design applied to a workpiece; (B)
FIG. 4 shows a state in which the optimum exposure amount of each part of the fine shape is determined, and FIG. 4C shows an example of binarization by a dither pattern method on a binary mask. FIG. 4D shows an example of binarization patterning on a binary mask by a dot gradation method.

FIG. 5 is a view schematically showing an exposure apparatus used in the manufacturing process shown in FIG.

FIG. 6 is a diagram illustrating a relationship between a binary mask used in the manufacturing process shown in FIG. 3 and a minimum resolution of an exposure apparatus.

FIG. 7 is a graph showing a relationship between dots P of the binary mask shown in FIG. 7 and exposure intensity.

FIG. 8 is a diagram showing an example in which exposure is performed through a binary mask and processed into a fine structure in the manufacturing process shown in FIG. 3;

FIG. 9 is a view showing a different example in which exposure is performed through a binary mask and processed into a fine structure in the manufacturing process shown in FIG. 3;

FIG. 10 is a flowchart showing a manufacturing process of a reflector according to another embodiment of the present invention.

FIG. 11 is a diagram for explaining the fabrication of a binary mask used in the manufacturing process shown in FIG. 10; FIG. 10A shows an example of a multivalued fine shape design applied to a workpiece; 1
0 (b) shows a state in which the optimal exposure amount of each part of the fine shape is determined, and FIG. 10 (c) shows an example of the transmittance of a binarized pattern on a binary mask. . FIG.
FIG. 0D shows an example of binarization patterning on a binary mask by the line gradation method.

FIG. 12 is a diagram illustrating a relationship between a binary mask used in the manufacturing process shown in FIG. 10 and a minimum resolution of an exposure apparatus.

13 is a graph showing the relationship between the pitch (line interval) P of the binary mask shown in FIG. 12 and the exposure intensity.

FIG. 14 is a diagram showing an example in which exposure is performed via a binary mask and processed into a fine structure in the manufacturing process shown in FIG. 10;

FIG. 15 is a diagram showing another example in which exposure is performed via a binary mask and processed into a fine structure in the manufacturing process shown in FIG. 10;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Cellular phone 10 Liquid crystal panel 12 Liquid crystal cell 20 Reflector (reflection layer) 21 Reflection surface 26 Fine shape 60, 160 Binary mask 61 Opening (ON) 62 Shielding part (OFF) 70 Light source 71 Incident light (illumination light) 72 Output Emitted light (reflected light) 81 Substrate 82 Resist layer 90 User 99 Light for exposure 100 Exposure device (processing device) 161 lines

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Eiichi Fujii 3-3-5 Yamato, Suwa City, Nagano Prefecture Inside Seiko Epson Corporation (72) Inventor Masatoshi Yonekubo 3-5-5, Yamato, Suwa City, Nagano Prefecture No. Seiko Epson Corporation F-term (reference) 2H091 FA16Y FA27Y FA29Y FB02 FB08 FC10 GA01 GA02 LA12 LA16 2H095 BA12 BB32 BB33 BB34 BC08 BC09 2H097 AA11 BB01 JA02 KA03 LA12 LA15 LA20

Claims (36)

[Claims] 1. A microstructure for processing a workpiece into a fine shape by a processing apparatus using a binary mask capable of controlling a transmission amount of a processing medium for storing a processing effect on the workpiece in two stages. The binary method of controlling a transmission amount of the processing medium for processing the fine shape by using a pattern smaller than a minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium. A method for manufacturing a microstructure, comprising: setting a mask on the processing apparatus and processing the workpiece. 2. The method according to claim 1, wherein the pattern is a dot on / off of an area unit smaller than the minimum resolution, and a transmission amount of the processing medium is controlled by an area ratio thereof. 3. The method according to claim 2, wherein the on-
OFF is a method of manufacturing a fine structure determined by a dither pattern method or an error diffusion method. 4. The method according to claim 2, wherein the on-
The method of manufacturing a microstructure, wherein the off area ratio is determined by changing the area of the dot. 5. The pattern according to claim 1, wherein the pattern is formed by arc-shaped lines that are repeated at a pitch smaller than the minimum resolution, and the transmission amount of the processing medium is controlled by changing the width of the line. Manufacturing method of a fine structure. 6. The method for manufacturing a microstructure according to claim 5, wherein the arc-shaped line is formed using a part of a spiral or concentric curve. 7. The method according to claim 1, wherein the object to be processed is a photosensitive member, the processing medium is light, and the processing apparatus is an exposure apparatus. 8. A fine structure according to claim 7, wherein a pitch P of the pattern satisfies the following equation, where λ is a wavelength of a light source of the exposure apparatus and NA is an aperture of a lens of an imaging system of the exposure apparatus. Manufacturing method. P <λ / NA 9. The method of manufacturing a microstructure according to claim 7, wherein the processed photosensitive member is the microstructure. 10. The method for manufacturing a fine structure according to claim 7, further comprising the step of forming the fine structure using the processed photosensitive member. 11. The method for manufacturing a microstructure according to claim 9, wherein a reflective member is formed by applying a reflective member to the processed photosensitive member. 12. The process according to claim 10, wherein, in the step of processing the workpiece, the light-sensitive member applied to a substrate to be a fine structure is processed, and the fine structure is formed using the light-sensitive member. In the step of forming a body, a method of manufacturing a microstructure in which the substrate is etched through the photosensitive member. 13. The method according to claim 12, wherein the substrate is a reflective member, and in the step of forming the fine structure using the photosensitive member, a reflector is formed. 14. The method according to claim 12, further comprising applying a reflective member to the etched substrate to form a reflector. 15. The method according to claim 11, 13 or 14, wherein the reflector is a liquid crystal reflector. 16. A binary mask which is set in a processing device and is capable of controlling a transmission amount of a processing medium in which a processing effect on a workpiece is accumulated in two stages, wherein the transmission amount of the processing medium is controlled by the processing device. A binary mask controlled by a pattern smaller than a minimum resolution determined by at least one of the workpiece and the processing medium. 17. The binary mask according to claim 16, wherein the pattern is a dot on / off of an area unit smaller than the minimum resolution, and controls an amount of transmission of a processing medium by an area ratio thereof. 18. The binary mask according to claim 17, wherein on / off of the dots is determined by a dither pattern method or an error diffusion method. 19. The binary mask according to claim 17, wherein the area ratio of the dot is determined by changing the area of the dot. 20. The binary mask according to claim 17, wherein the object to be processed is a photosensitive member, the processing medium is light, and the processing device is an exposure device. 21. The apparatus according to claim 20, wherein a wavelength λ of a light source of the exposure apparatus and an aperture N of a lens of an image forming system of the exposure apparatus.
Assuming that A, the dot pitch P is a binary mask satisfying the following expression. P <λ / NA 22. The pattern according to claim 16, wherein the pattern is constituted by arc-shaped lines repeated at a pitch smaller than the minimum resolution, and the transmission amount of the processing medium is controlled by changing the width of the line. Binary mask to do. 23. The binary mask according to claim 22, wherein the arc-shaped line is formed using a part of a spiral or concentric curve. 24. The binary mask according to claim 22, wherein the workpiece is a photosensitive member, the processing medium is light, and the processing apparatus is an exposure apparatus. 25. A binary mask according to claim 24, wherein a wavelength P of the light source of the exposure apparatus and an aperture NA of a lens of an image forming system of the exposure apparatus are the same. . P <λ / NA 26. A method of manufacturing a binary mask, which is set in a processing apparatus and is capable of controlling a transmission amount of a processing medium, in which a processing effect on a workpiece is accumulated, in two stages, wherein a desired fine processing is performed. The transmission amount of the processing medium is converted into an on / off area ratio of dots in an area unit smaller than the minimum resolution determined by at least one of the processing apparatus, the workpiece, and the processing medium, and the dots are converted to the 2 A method for manufacturing a binary mask, comprising a step of forming a binary mask. 27. A method according to claim 26, wherein the area ratio of the dots is determined by a dither pattern method or an error diffusion method. 28. The method according to claim 26, wherein the area ratio of the dot is determined by changing the area of the dot. 29. The method according to claim 26, wherein the object to be processed is a photosensitive member, the processing medium is light, and the processing apparatus is an exposure apparatus. 30. The exposure apparatus according to claim 29, wherein a wavelength λ of a light source of the exposure apparatus and an aperture N of a lens of an image forming system of the exposure apparatus.
Assuming that A, the dot pitch P satisfies the following equation. P <λ / NA 31. A method of manufacturing a binary mask which is set in a processing apparatus and is capable of controlling a transmission amount of a processing medium in which a processing effect on a processing object is accumulated in two stages, wherein the processing apparatus and the processing target It is constituted by an arc-shaped line repeated at a pitch smaller than the minimum resolution determined by at least one of the body and the processing medium,
A method of manufacturing a binary mask, comprising: forming, on the binary mask, a pattern in which the transmission amount of the processing medium for performing desired fine processing is converted into the width of the line. 32. The method according to claim 31, wherein the arc-shaped line is formed by using a part of a spiral or concentric curve. 33. The method for manufacturing a binary mask according to claim 32, wherein the arc-shaped line is scanned by a laser beam in an arc shape and the width is controlled by varying the intensity of the laser beam. 34. The method according to claim 31, wherein the object to be processed is a photosensitive member, the processing medium is light, and the processing apparatus is an exposure apparatus. 35. The binary mask according to claim 31, wherein a pitch P of the line satisfies the following expression, where λ is a light source wavelength of the exposure apparatus and NA is an aperture of a lens of an imaging system of the exposure apparatus. Manufacturing method. P <λ / NA 36. The microstructure according to claim 1, wherein the microstructure is at least one of a semiconductor substrate, a microelectronic mechanical system substrate, a diffraction grating, a hologram, a microlens, a Fresnel lens, and an optical communication device. A method for producing a microstructure, comprising: