JP2002305348A - Semiconductor laser device - Google Patents

Abstract

[PROBLEMS] To provide an end face reflection film capable of coping with high output or short wavelength of a semiconductor laser device. SOLUTION: In a semiconductor laser device 10, a quantum well active layer 11 composed of a barrier layer composed of gallium nitride and a well layer composed of indium gallium nitride is composed of at least n-type and p-type light composed of aluminum gallium nitride. A resonator 12 sandwiched between the guide layers from above and below is formed. The end face reflection film 1 is provided on a reflection end face 10b of the resonator 12 opposite to the emission end face 10a of the laser beam 100.
3 are provided. The end face reflection film 13 includes a plurality of unit reflection films 130 each composed of a low refractive index film 13a made of silicon oxide and a high refractive index film 13b made of niobium oxide formed sequentially from the end face side of the resonator 12. Is configured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser device expected to be applied to the field of optical information processing.

[0002]

2. Description of the Related Art Generally, an end face reflection film is provided on the end face of a resonator of a laser beam in a semiconductor laser device.
Above all, the reflection end face, which is the rear end face facing the emission face of the laser beam, is required to have a high reflectivity, so that the film thickness is λ /
An end face reflection film having a high reflectance is formed by alternately laminating a 4n ₁ low refractive index film and a λ / 4n ₂ high refractive index film. Here, λ represents the oscillation wavelength of the laser light, n ₁ represents the refractive index of the low refractive index film at the wavelength λ, and n ₂ represents the refractive index of the high refractive index film at the wavelength λ.

The low-refractive-index film and the high-refractive-index film constituting the end face reflection film are required to have sufficiently small absorption coefficients at the wavelength of laser light. Therefore, silicon oxide (SiO ₂ ) or aluminum oxide (Al ₂ O ₃ ) having a small absorption coefficient in a wide band including the visible light region and the ultraviolet region is used for the low refractive index film constituting the end face reflection film. . On the other hand, various dielectric materials are used for the high refractive index film constituting the end face reflection film depending on the wavelength of the laser light.

For example, an infrared or red semiconductor laser device made of aluminum gallium arsenide (AlGaAs) that outputs a laser beam having a wavelength of about 780 nm uses amorphous silicon (α-Si) as a high refractive index film. ing. Here, the wavelength 780 of amorphous silicon
The value of the absorption coefficient for light of nm is 4 × 10 ⁴ cm ⁻¹ .

As an example of application of this infrared or red semiconductor laser device to the field of optical disc devices, a quadruple-speed CD-R capable of writing only once at a speed four times the standard.
(CD-recordable) laser element. In the quadruple-speed CD-R laser element, a laminated film in which silicon oxide and amorphous silicon form a pair is used as an end face reflection film on the rear end face. For example, by forming an end face reflection film from two sets (periods) of silicon oxide and amorphous silicon, the reflectance can be 95%.

Using this end face reflection film, 100 mW during pulse driving with a duty ratio of 50%, and continuous (Co
80mW at the time of driving (ntinous-Wave: CW)
A laser element for a quadruple-speed CD-R having an optical output of 4 × has been realized.

On the other hand, aluminum gallium indium phosphide (AlGa) which outputs a laser beam having a wavelength of about 650 nm
The high refractive index film of the red semiconductor laser device made of InP) is made of titanium oxide (T) instead of amorphous silicon.
iO ₂ ) is used. The reason that amorphous silicon is not used is that amorphous silicon has a large absorption coefficient with respect to light having a wavelength around 650 nm. Therefore, when this is used for the end face reflection film, light absorption in the amorphous silicon layer becomes large. This is because the crystallinity near the cavity facet of the laser device is degraded due to the temperature rise due to the light absorption, and the reliability of the device is reduced.

Therefore, in a red semiconductor laser device having a wavelength of about 650 nm, titanium oxide having a sufficiently large refractive index as compared with silicon oxide and an absorption coefficient smaller than that of amorphous silicon is used as an end face reflection film. While the value of the absorption coefficient of amorphous silicon for light having a wavelength of 650 nm is 1 × 10 ⁵ cm ⁻¹ , the value of the absorption coefficient of titanium oxide for light having a wavelength of 650 nm is 2 cm ⁻¹ .

Further, in a blue-violet semiconductor laser device having an oscillation wavelength of about 400 nm which is currently being developed,
A laminated film made of silicon oxide and titanium oxide is used as the end face reflection film. For example, as an end face reflection film of a semiconductor laser device made of aluminum indium gallium nitride (AlInGaN), a semiconductor laser device using a stacked film made of silicon oxide and titanium oxide is disclosed in Jpn.
J. Appl. Phys. Vol. 38 (1999) pp. L184-L186. The value of the absorption coefficient of titanium oxide with respect to light having a wavelength of 400 nm is 2400 cm ^-1 .

[0010]

In recent years, a semiconductor laser device for an optical disk device has been required to have a higher output for improving a recording speed on an optical disk and a shorter wavelength for improving a recording density. Has been requested.

However, the conventional oscillation wavelength is about 780.
End-face reflection film composed of a laminate of silicon oxide and amorphous silicon used for infrared or red semiconductor laser device of nm, and silicon oxide and titanium oxide used for red semiconductor laser device having an oscillation wavelength of about 650 nm However, there is a problem that the end face reflection film made of the laminated body cannot cope with an increase in the output of the laser element.

Further, an end face reflection film made of a laminate of silicon oxide and titanium oxide, which is also used for a blue-violet semiconductor laser device having an oscillation wavelength of about 400 nm, cannot cope with a short wavelength laser device. There is also a problem.

This is because the light absorption coefficient of the high refractive index film in the emitted light of each semiconductor laser element cannot be said to be sufficiently small. Therefore, when the output of the laser element is increased, the light absorption coefficient of the high refractive index film is reduced. This is because the temperature increase due to the above becomes remarkable, and the crystal structure of the semiconductor laser element, particularly the crystal structure near the cavity facet in the active region is deteriorated.

Similarly, when the oscillation wavelength is reduced to 400 nm or less, it is difficult to cope with the conventional end face reflection film composed of a laminated film of silicon oxide. This is because the absorption coefficient of titanium oxide greatly increases in a short wavelength region.

An object of the present invention is to solve the above-mentioned conventional problems and to obtain an end face reflection film capable of coping with a high output or a short wavelength of a semiconductor laser device.

[0016]

In order to achieve the above object, the present invention employs a structure in which niobium oxide (Nb ₂ O ₅ ) is used for a high refractive index film constituting an end face reflection film of a semiconductor laser device.

Specifically, a first semiconductor laser device according to the present invention includes a resonator formed by a plurality of semiconductor layers;
A reflective film containing niobium oxide formed on the end face of the resonator.

According to the first semiconductor laser device, the reflection film formed on the end face of the resonator contains, for example, niobium oxide having a smaller light absorption coefficient than that of titanium oxide. Therefore, a rise in the temperature of the reflection film is suppressed. Therefore, the crystal structure of the semiconductor layer near the end face of the resonator can be prevented from deteriorating, so that the output of the laser device can be increased or the wavelength can be shortened.

A second semiconductor laser device according to the present invention comprises:
A resonator formed by a plurality of semiconductor layers; a reflection film formed on an end face of the resonator and including a first dielectric layer and a second dielectric layer having a higher refractive index than the first dielectric layer; And the second dielectric layer is made of niobium oxide.

According to the second semiconductor laser device, the same effect as that of the first semiconductor laser device can be obtained. In addition, the high refractive index film made of niobium oxide and the first refractive index smaller than that of niobium oxide are used. , The reflectance can be reliably increased.

A third semiconductor laser device according to the present invention comprises:
A resonator formed by a plurality of semiconductor layers and a second dielectric layer formed on an end face of the resonator and having a first dielectric layer and a second dielectric layer having a larger refractive index than the first dielectric layer are alternately stacked. And at least the second dielectric layer located on the end face side of the resonator is made of niobium oxide.

According to the third semiconductor laser device, since the reflection film of the second semiconductor laser device is laminated, the reflectance is further improved. Further, in the case of a laser element having an oscillation wavelength in the red region, the second dielectric layer located on the side opposite to the end face of the resonator in the reflection film, that is, on the outside, has a dielectric material having a higher refractive index than niobium oxide, for example, When titanium oxide or the like is used, since the absorption coefficient of titanium oxide is not so large in the red region, the reflectance of the reflective film can be increased.

In the second or third semiconductor laser device, it is preferable that the first dielectric layer is made of silicon oxide or aluminum oxide.

In the first to third semiconductor laser devices,
Preferably, the oscillation wavelength of the resonator is about 400 nm or shorter.

In the first to third semiconductor laser devices,
Preferably, the plurality of semiconductor layers are made of a group III-V nitride semiconductor.

In the first method of manufacturing a semiconductor laser device according to the present invention, a step of forming a resonator structure by sequentially growing a plurality of semiconductor layers on a substrate; Exposing the cavity facets from the plurality of semiconductor layers by cleaving or etching, and forming a reflective film containing niobium oxide on the exposed cavity facets.

According to the first method for manufacturing a semiconductor laser device, the substrate on which the plurality of semiconductor layers have been grown is cleaved or etched to expose the cavity facets from the plurality of semiconductor layers, and the exposed cavity facets are exposed. Since the reflective film containing niobium oxide is formed thereon, the first semiconductor laser device of the present invention can be realized.

In the first method for fabricating a semiconductor laser device, the step of forming the reflection film includes the step of forming the reflection film by forming a first dielectric layer having a refractive index smaller than that of niobium oxide and a second dielectric layer made of niobium oxide. It is preferable to include a step of forming a laminated structure including a body layer. By doing so, the second or third semiconductor laser device of the present invention can be realized.

In the first method for manufacturing a semiconductor laser device, it is preferable that the reflection film is formed by a sputtering method or a reactive sputtering method.

In the first method for manufacturing a semiconductor laser device, it is preferable that the plurality of semiconductor layers are made of a group III-V nitride semiconductor.

An optical disc device according to the present invention includes a light emitting section including a semiconductor laser element, a condensing optical section for condensing laser light emitted from the light emitting section on a recording medium on which data is recorded, and a recording medium. A light detection unit for detecting the reflected laser light, the semiconductor laser element has a resonator formed by a plurality of semiconductor layers, and a reflection film containing niobium oxide formed on an end face of the resonator ing.

According to the optical disk device of the present invention, since the semiconductor laser element constituting the light emitting section has the reflecting film containing niobium oxide formed on the end face of the resonator, the light emitting section has a higher height than the semiconductor laser element. It is possible to cope with reduction in output or wavelength.

[0033]

(First Embodiment) A first embodiment of the present invention.
An embodiment will be described with reference to the drawings.

FIG. 1 shows a semiconductor laser device according to a first embodiment of the present invention, which is a blue-violet semiconductor laser device having an oscillation wavelength of about 400 nm.

As shown in FIG. 1, the semiconductor laser device 10
For example, the quantum well active layer 11 composed of a barrier layer made of gallium nitride (GaN) and a well layer made of indium gallium nitride (InGaN) has at least n-type and p-type aluminum gallium nitride (AlGa).
A resonator 12 sandwiched from above and below by a light guide layer made of N) is formed.

An end face reflection film 13 is provided on a reflection end face 10b of the resonator 12 opposite to the emission end face 10a of the laser beam 100.

The end face reflection film 13 is composed of a low refractive index film 13a made of silicon oxide (SiO ₂ ) as a first dielectric layer and a second dielectric layer formed sequentially from the end face side of the resonator 12. And a plurality of unit reflection films 130 composed of a high refractive index film 13b made of niobium oxide (Nb ₂ O ₅ ).

The thicknesses of the low refractive index film 13a and the high refractive index film 13b and the number of the unit reflection films 130 can be set to appropriate values according to the specifications of the semiconductor laser device. For example, the unit reflection film 130 made of silicon oxide having a thickness of about 68 nm and niobium oxide having a thickness of about 40 nm
Are formed in three sets, so that about 9
A reflectivity of 3.9% can be obtained.

Here, even if titanium oxide (TiO ₂ ) is used for the high-refractive-index film 13b as a reflection film for a laser beam having an oscillation wavelength of about 400 nm, the same reflectance as that of niobium oxide is used. It is possible to get

However, in the first embodiment, since niobium oxide is used for the high refractive index film 13b of the end face reflection film 13, the light absorption coefficient of niobium oxide is smaller than that of titanium oxide. The temperature rise near the end face can be suppressed. As a result, the crystallinity of the quantum well active layer 11 and its peripheral portion hardly deteriorates, and the output of the semiconductor laser device can be increased. Although the active layer has a quantum well structure,
It is not always necessary to adopt a quantum well structure.

Further, apart from the high output, the oscillation wavelength is 4
Even when the wavelength is reduced to an ultraviolet region of not more than 00 nm, the unit reflection film 130 made of silicon oxide and titanium oxide is formed on the end surface reflection film 13 for the ultraviolet semiconductor laser device.
When the semiconductor laser device is used, the semiconductor laser device is deteriorated by the light absorption of the titanium oxide. On the other hand, in the first embodiment, even in the ultraviolet region, since the light absorption coefficient of niobium oxide is smaller than that of titanium oxide, deterioration of the element due to a shorter wavelength can be reduced.

The niobium oxide also functions as a protective film for preventing water, hydrogen or the like entering from the outside from diffusing into the inside of the laser element. Promising as a semiconductor material that can obtain blue-violet light with an oscillation wavelength of about 400 nm
Although the III-V nitride semiconductor has a property that the electrical characteristics are easily deteriorated by hydrogen, in particular, the semiconductor laser device according to the present embodiment has a structure in which one of the end faces of the cavity prevents oxidation of hydrogen from entering. Since the semiconductor laser element is covered with niobium, deterioration of the semiconductor laser element due to diffusion of impurities such as hydrogen from the outside can be prevented.

Hereinafter, a method of manufacturing the semiconductor laser device configured as described above will be described with reference to the drawings.

FIG. 2 shows a method of manufacturing a semiconductor laser device according to the first embodiment of the present invention, and schematically shows a method of manufacturing an end face reflection film by a sputtering method. here,
As the sputtering film forming apparatus, for example, a magnetron sputtering apparatus is used.

First, the schematic configuration of the film forming apparatus will be described.

As shown in FIG. 2, the magnetron sputtering apparatus 20 has a gas inlet 21 provided at an upper portion of a wall surface and an exhaust port 22 provided at a lower portion of the wall surface facing the gas inlet 21. It has a membrane chamber 23.

An anode 24 is provided at the bottom of the film forming chamber 23. On the anode 24, a laser element forming body 10A to be formed is held with the reflection end face 10b of each resonator 12 facing upward. Have been. Here, the laser element forming body 10A
Is a strip-shaped semiconductor wafer on which a plurality of resonators 12 have been formed in advance, and is cleaved in a direction substantially perpendicular to the resonator length direction to expose the reflection end face 10b.

In the upper part of the film forming chamber 23, niobium oxide (Nb
A flat magnetron electrode 26 is provided in which a plate-like target material 25 made of ₂ O ₅ ) is held so as to face the anode 24. Thereby, the laser element formed body 10A
The exposed reflection end face 10 b faces the target material 25.

Next, a film forming method will be described.

First, a plasma generating gas containing argon (Ar) as a main component is introduced from the gas inlet 21 into the reduced pressure film forming chamber 23. Subsequently, high-frequency power is applied to the target material 25 to generate plasma near the surface of the target material 25. At this time, the surface of the target material 25 is sputtered by argon ions colliding with the target material 25, so that a dielectric film is formed on the reflection end face 10b of the laser element forming body 10A held on the anode 24. You. In the first embodiment, as an example, three sets of unit reflective films 130 each including a low refractive index film 13a made of silicon oxide and a high refractive index film 13b made of niobium oxide are formed.

The low-refractive-index film 13a uses a reactive sputtering method in which the target material 25 is silicon (Si), the plasma generation gas is argon (Ar), and the reactive gas is oxygen (O ₂ ). .

On the other hand, when sputtering the target material 25 made of niobium oxide with argon ions, the high refractive index film 13b tends to have a composition of oxygen of niobium oxide smaller than the stoichiometric ratio. Therefore,
In order to prevent oxygen deficiency in niobium oxide, it is desirable to supply oxygen gas together with argon gas as an introduction gas during film formation.

In this embodiment, the supply amount of argon is set to about 10 sccm (standard cubic c).
The amount of oxygen supplied is about 40 sccm. The pressure in the film forming chamber 23 during film formation is set to about 0.1 Pa, and the high frequency power is set to about 1 kW. Due to these conditions, about 8
The high-refractive-index film 13b made of niobium oxide having a deposition rate of nm / min and having almost no oxygen deficiency can be formed.

Although niobium oxide was used as the target material 25 for forming the high refractive index film 13b, instead of this, metal niobium (Nb) was used as the target material 25 and oxygen gas was used as the reactive gas. The film may be formed by a reactive sputtering method.

The end face reflection film 13 can be formed by a vacuum process in order to prevent interface contamination between the low refractive index film 13a made of silicon oxide and the high refractive index film 13b made of niobium oxide. desirable. For this purpose, a multi-chamber sputtering apparatus including a film formation chamber for silicon oxide and a film formation chamber for niobium oxide, or a single film formation chamber having a silicon oxide material and a niobium oxide material is provided. It is desirable to use a multi-source sputtering apparatus.

Thus, niobium oxide (Nb ₂ O ₅ )
Since a dielectric film having a low light absorption and a high refractive index can be formed relatively easily, not only a blue-violet semiconductor laser element but also a laser element that outputs laser light in another wavelength region such as a red semiconductor laser element. Easy to apply.

FIGS. 3A and 3B show evaluation results by a spectroscopic ellipsometer, and show the light absorption coefficient and the wavelength dispersion of the refractive index of the high refractive index film made of niobium oxide according to the first embodiment. Are shown for comparison with high refractive index films made of titanium oxide by a reactive sputtering method.

As shown in FIG. 3A, the absorption coefficient of niobium oxide shown by the solid line monotonically increases as the wavelength becomes shorter, but its value is significantly smaller than that of titanium oxide shown by the broken line. I understand. For example, 400 nm
Comparing the absorption coefficients at the wavelengths of
Niobium oxide is 109 cm whereas 400 cm ^-1
-1 is indicated.

On the other hand, as shown in FIG. 3B, the refractive index of niobium oxide monotonically increases as the wavelength decreases, but shows a slightly smaller value than titanium oxide. As described above, the refractive index of titanium oxide is larger than that of niobium oxide. For example, when comparing the refractive index at a wavelength of 400 nm, titanium oxide has a value of 2.9.
5, whereas niobium oxide shows 2.52.

Generally, deterioration of a laser element due to light absorption is a problem because the light absorption coefficient is 10 ³ cm ^-1 to 1
0 is ⁴ cm ^-1 or more in the case. The value of the absorption coefficient is 10 ⁴ c
Assuming that the region of m ^-1 or less is a wavelength region that can be used as the material of the end face reflection film 13, in the case of titanium oxide, about 37
It can be seen that while the wavelength of 0 nm or less cannot be handled, the case of niobium oxide can be handled up to about 340 nm.

Although the refractive index of niobium oxide is slightly smaller than the refractive index of titanium oxide, as shown in FIG. 3B, silicon oxide (SiO ₂ ) constituting the low refractive index film 13a is used. Is a sufficiently large value compared to the refractive index of the unit reflection film 1 made of silicon oxide and niobium oxide.
By using 30, a sufficient reflectance can be obtained for the end face reflection film 13.

FIG. 4 shows the film thickness dependence of the reflectance of the end face reflection film of the semiconductor laser device according to the first embodiment for light having a wavelength of 400 nm. Here, a low-refractive-index film 13a made of silicon oxide having a thickness of about 68 nm determined by λ / 4n ₁ and a high-refractive-index film made of niobium oxide having a thickness of about 40 nm determined by λ / 4n ₂ By stacking three sets of the unit reflection films 130 composed of the reflection films 13b and 13b, the end face reflection film 13 having a reflectance of about 93.9% is obtained. Here, λ is 400 nm,
n ₁ is the refractive index of silicon oxide at a wavelength of 400 nm, and n ₂ is the refractive index of niobium oxide at a wavelength of 400 nm.

In the first embodiment, a magnetron sputtering apparatus is used as a method for forming a niobium oxide. However, the present invention is not limited to this. Good.

The low refractive index film 13a and the high refractive index film 13
When the low-refractive-index film 13a is provided on the end face side of the unit reflective film 130 made of b, a difference in refractive index occurs between the low-refractive-index film 13a and the semiconductor layer in contact with the low-refractive-index film 13a, and the reflectivity increases.
However, although the reflectance is reduced, a configuration in which the high refractive index film 13b is provided on the end face side, or a configuration in which the film outside the unit reflection film 130 ends with only one of a set of films, that is, the configuration in which the end face side and the outside Even when the low refractive index film 13a or the high refractive index film 13b is provided on both sides, the effect of the present invention is not impaired.

Although silicon oxide was used for the low refractive index film 13a, aluminum oxide (Al ₂ O 3) was used instead.
O ₃ ) may be used.

The reflection end face 10b of the resonator 12
Alternatively, silicon oxide or aluminum oxide having a low refractive index may be provided as a protective film also on the emission end face 10a on the opposite side.

A III-V nitride semiconductor having gallium nitride as a main composition was used as a semiconductor material of a blue-violet semiconductor laser device having an oscillation wavelength of about 400 nm. However, the present invention is not limited to this, and zinc selenide (ZnSe) ), Zinc sulfide (ZnS) or zinc oxide (ZnO).

(Second Embodiment) Hereinafter, a second embodiment of the present invention will be described.

In the above-described first embodiment, niobium oxide is used for the high-reflectivity film that can cope with a short wavelength, but in the second embodiment, the oscillation wavelength is from infrared to red long wavelength. To be able to cope with high output of a semiconductor laser device.

For example, in a 16 × CD-R laser device capable of writing data at a speed 16 times the standard and performing one write operation, a pulse drive with a duty ratio of 50% requires 150 m.
In addition, a light output of 110 mW is required when driving CW and CW, and the conventional end-face reflection film composed of a low-refractive-index film made of silicon oxide and a high-refractive-index film made of amorphous silicon has sufficient reliability. Can not get.

Therefore, in the second embodiment, the first dielectric layer and the second dielectric layer used for the end face reflection film are made of silicon oxide (SiO ₂ ) and niobium oxide (Nb ₂ ), respectively.
O ₅ ) to provide a 16 × CD-
Long-term reliability of the infrared or red semiconductor laser device for R can be obtained.

FIG. 5 shows an infrared or red semiconductor laser device having an oscillation wavelength of about 780 nm, which is a semiconductor laser device according to the second embodiment of the present invention.

As shown in FIG. 5, the semiconductor laser element 30
Include, for example, aluminum gallium arsenide (AlGaAs)
s) and a well layer made of gallium arsenide (GaAs) have at least n-type and p-type aluminum gallium arsenide (Al).
A resonator 32 sandwiched from above and below by a light guide layer made of GaAs) is formed. Although the active layer has the quantum well structure in the second embodiment, it is not always necessary to adopt the quantum well structure.

An end face reflection film 33 is provided on the reflection end face 30b of the resonator 32 opposite to the emission end face 30a of the laser beam 100.

The end face reflection film 33 is composed of a low refractive index film 33 a made of silicon oxide as a first dielectric layer and a niobium oxide film formed as a second dielectric layer, which are formed sequentially from the end face side of the resonator 32. It is configured to include a plurality of unit reflection films 330 each including a high refractive index film 33b made of.

The thicknesses of the low refractive index film 33a and the high refractive index film 33b and the number of the unit reflection films 330 can be set to appropriate values according to the specifications of the semiconductor laser device. For example, on the reflection end face 30b, the film thickness is λ /
Silicon oxide determined by 4n ₁ and a film thickness of λ / 4
By forming two sets of niobium oxide determined by n _2, a reflectance of about 85% can be obtained in the end face reflection film 33.

According to the second embodiment, niobium oxide is used for the high refractive index film 33b of the end face reflection film 33 formed on the reflection end face 30b of the resonator 32, so that the light absorption coefficient of the niobium oxide is Since it is smaller than amorphous silicon, the temperature rise near the end face of the resonator 33 is suppressed. As a result, the crystallinity of the quantum well active layer 31 and its peripheral portion is hardly deteriorated, and the output of the semiconductor laser device can be increased.

This is because of the fact that the wavelength is 780 nm.
The light absorption coefficient of morphus silicon is 4 × 10^Four c
m^-1Whereas, the value of the light absorption coefficient of niobium oxide is
10 ^-3cm^-1Since it is almost 0 as follows, the end face reflection film 33
This is because light absorption at the point can be greatly reduced.

As a modification of the second embodiment,
Instead of niobium oxide of the second set of high refractive index films 33b in the end face reflection film 33, hydrogenated amorphous silicon (α-Si: H) which is amorphous silicon containing hydrogen may be used. By doing so, the reflectance of the end face reflection film 33 can be made about 90%.

As described above, in order to increase the output of the infrared or red semiconductor laser device, niobium oxide may be used for all the high refractive index films 33b of the two unit reflection films 330. May be provided with the end face reflection film 33 composed of three or more sets of unit reflection films 330.

When a high output is not required, for example, in the case of a laser element for a quadruple-speed CD-R, a plurality of unit reflection films 330 are formed so that a high reflectivity can be obtained with a predetermined injection current amount. A dielectric having a higher refractive index than niobium oxide may be used for the outer high refractive index film 33b except for the first set on the reflection end face 30b side.

(Third Embodiment) Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.

FIG. 6 schematically shows the configuration of an optical disk device according to the third embodiment of the present invention. In FIG. 6, the optical disk device according to the third embodiment uses the semiconductor laser device of the present invention, that is, the blue-violet semiconductor laser device according to the first embodiment, for the light emitting section 41 of the optical disk device.

As shown in FIG. 6, the optical disk device includes:
An emission end face of a semiconductor laser element constituting the light emitting section 41;
Optical disc 5 as a recording medium on which desired data is recorded
0 data holding surfaces are provided so as to face each other,
Between the light emitting section 41 and the optical disk 50, the light collecting optical section 4 is provided.
0 is provided.

The condensing optical section 40 is provided with a collimator lens 42 provided in order from the light emitting section 41 to make the emitted light 51 emitted from the light emitting section 41 a parallel light, and a collimator lens 42 for converting the parallel light into three beams (FIG. (Not shown), a half prism 44 that transmits the outgoing light 51 and changes the optical path of the reflected light 52 from the optical disk 50, and a condensing lens that focuses three beams on the optical disk 50. 45. Here, the emission light 51 has a wavelength of about 400 nm.
Is used.

The three beams condensed on the optical disk 50 have spots each having a diameter of about 0.4 μm. A drive system circuit 46 is provided to correct the radial displacement of the optical disk 50 detected by the positions of these three spots by moving the condenser lens 45 appropriately.

On the optical path of the reflected light 52 from the half prism 44, a light receiving lens 47 for narrowing the reflected light 52, a cylindrical lens 48 for detecting a positional shift of the focal point, and converting the collected reflected light 52 into an electric signal. And a photodiode element 49 as a light detection unit.

As described above, the emitted light 51 is transmitted to the optical disk 50.
The semiconductor laser device constituting the light emitting portion 41 of the optical disc device including the condensing optical portion 40 for guiding the light to the light source and the photodiode device 49 for receiving the reflected light 52 reflected by the optical disc 50 has a higher light intensity than amorphous silicon or titanium oxide. Niobium oxide having a small absorption coefficient is used for the high refractive index film of the end face reflection film which is the end face opposite to the emission end face. For this reason, when shortening the oscillation wavelength to about 400 nm or 400 nm or less, the long-term reliability of the light emitting unit 41,
As a result, long-term reliability of the optical disk device can be obtained.

As a modification of the third embodiment,
If the infrared or red semiconductor laser device according to the second embodiment is used as the semiconductor laser device constituting the light emitting section 41,
Long-term reliability can be obtained as a 6 × -speed CD-ROM drive device.

[0090]

According to the semiconductor laser device and the method of manufacturing the same according to the present invention, the absorption of laser light in the reflection film is reduced, and the temperature rise of the reflection film is suppressed. Deterioration of the crystal structure in the vicinity can be prevented, and higher output or shorter wavelength of the laser element can be achieved.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a blue-violet semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a schematic view illustrating a method for manufacturing a reflection end face of the blue-violet semiconductor laser device according to the first embodiment of the present invention.

FIGS. 3A and 3B show the wavelength dependence of a high refractive index film in an end face reflection film of the blue-violet semiconductor laser device according to the first embodiment of the present invention, and FIG. It is a graph which shows a coefficient, and (b) is a graph which shows a refractive index.

FIG. 4 is a graph showing the film thickness dependence of the reflectance of the end face reflection film of the blue-violet semiconductor laser device according to the first embodiment of the present invention for light having a wavelength of 400 nm.

FIG. 5 is a perspective view showing an infrared or red semiconductor laser device according to a second embodiment of the present invention.

FIG. 6 is a schematic configuration diagram illustrating an optical disc device according to a third embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 10 semiconductor laser element 10a emission end face 10b reflection end face 10A laser element forming body 11 quantum well active layer 12 resonator 13 end face reflection film 13a low refractive index film (first dielectric layer) 13b high refractive index film (second dielectric layer) Body Layer) 130 Unit Reflection Film 20 Magnetron Sputtering Apparatus 21 Gas Inlet 22 Exhaust Port 23 Film Forming Room 24 Anode 25 Target Material 26 Plate-Type Magnetron Electrode 30 Semiconductor Laser Element 30a Emission End Face 30b Reflection End Face 31 Quantum Well Active Layer 32 Resonator 33 end face reflection film 33a low refractive index film (first dielectric layer) 33b high refractive index film (second dielectric layer) 330 unit reflection film 100 laser beam 40 focusing optical unit 41 light emitting unit 42 collimator lens 43 diffraction Lattice 44 Half prism 45 Condenser lens 46 Drive system circuit 47 Light receiving lens 4 8 Cylindrical lens 49 Photodiode element (photodetector) 50 Optical disk 51 Emitted light 52 Reflected light

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshiko Miyanaga 1006 Kadoma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (72) Inventor Masakatsu Suzuki 1006 Okadoma Kadoma, Kadoma City Osaka Pref. 72) Inventor Masahiro Kume 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (72) Inventor Yuzaburo 1006 Kadoma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. 1006 Kadoma, Kamon, Fumonma-shi Matsushita Electric Industrial Co., Ltd. F term (reference) 5D119 AA33 BA01 BB02 FA05 FA20 5F073 AA73 AA83 AB27 BA05 CA04 CA05 DA21 DA32 DA33 EA05 EA24 EA28

Claims (8)

[Claims] 1. A semiconductor laser device having an oscillation wavelength in an infrared or red region, comprising: a resonator formed by a plurality of semiconductor layers; and a first dielectric layer interposed at an end face of the resonator. A reflection film including a second dielectric layer made of niobium oxide, wherein the absorption coefficient of niobium oxide for the oscillation wavelength is smaller than that of titanium oxide for the oscillation wavelength. . 2. A semiconductor laser device having an oscillation wavelength in an infrared or red region, comprising: a resonator formed by a plurality of semiconductor layers; and a resonator formed on an end face of the resonator sequentially from the end face side; A reflective layer including a dielectric layer and a second dielectric layer having a refractive index larger than that of the first dielectric layer, wherein the second dielectric layer is made of niobium oxide, and the oscillation wavelength of niobium oxide is provided. A semiconductor laser device characterized in that the absorption coefficient is smaller than the absorption coefficient of titanium oxide for the oscillation wavelength. 3. A semiconductor laser device having an oscillation wavelength in an infrared or red region, comprising: a resonator formed by a plurality of semiconductor layers; and a resonator formed on an end face of the resonator sequentially from the end face side. A reflective film formed by alternately stacking dielectric layers and second dielectric layers having a refractive index larger than that of the first dielectric layer, wherein the second dielectric layer is made of niobium oxide; A semiconductor laser device wherein the absorption coefficient of niobium for the oscillation wavelength is smaller than the absorption coefficient of titanium oxide for the oscillation wavelength. 4. A CD-R whose oscillation wavelength is in the infrared or red region.
Semiconductor laser device, comprising: a resonator formed by a plurality of semiconductor layers; and a second dielectric layer formed of niobium oxide formed on a facet of the resonator with a first dielectric layer interposed therebetween. And a reflection film including niobium oxide, wherein the absorption coefficient of niobium oxide for the oscillation wavelength is smaller than the absorption coefficient of titanium oxide for the oscillation wavelength. 5. A CD-R whose oscillation wavelength is in the infrared or red region.
A resonator formed by a plurality of semiconductor layers; and a resonator formed on an end face of the resonator sequentially from the end face side, wherein a first dielectric layer and a refractive index are the first dielectric layer. A reflection film including a second dielectric layer larger than the first dielectric layer, wherein the second dielectric layer is made of niobium oxide, and the absorption coefficient of niobium oxide for the oscillation wavelength is the absorption coefficient of titanium oxide for the oscillation wavelength. A semiconductor laser device characterized by being smaller than the above. 6. A CD-R whose oscillation wavelength is in the infrared or red region.
A resonator formed of a plurality of semiconductor layers; and a first dielectric layer and a first dielectric layer formed on an end face of the resonator sequentially from the end face side. A reflective film formed by alternately laminating second dielectric layers larger than the layer, wherein the second dielectric layer is made of niobium oxide, and the absorption coefficient of niobium oxide with respect to the oscillation wavelength is that of titanium oxide. A semiconductor laser device having an absorption coefficient smaller than an oscillation wavelength. 7. The semiconductor device according to claim 1, wherein said first dielectric layer is made of silicon oxide or aluminum oxide.
7. The semiconductor laser device according to any one of 6. 8. The absorption coefficient of niobium oxide constituting the reflection film for light having a wavelength of 780 nm is 0.3 cm.
The semiconductor laser device according to claim 1, wherein the ^{value is} less than ⁻¹ .