JP2002302763A - Sputtering equipment - Google Patents

Abstract

(57) [Problem] To reduce the running cost, improve the operation rate, and improve the film quality stability of a sputtering apparatus by combining a method using a shutter plate and a disk method for target cleaning of the sputtering apparatus. SOLUTION: A sputter chamber in which a substrate holder and a target are disposed facing each other and an exhaust chamber adjacent to the sputter chamber are provided to support a shutter plate and a disk, respectively. A moving mechanism for moving the plate and the disk between the substrate holder and the target in the sputtering chamber, and the exhaust chamber side, respectively, by using the moving mechanism, either the shutter plate or the disk is moved in the sputtering chamber. The problem was solved by a sputtering apparatus that can move the substrate holder between the target and the target and sputter the target surface while the substrate holder is shielded from the target.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a film forming apparatus used in a semiconductor manufacturing process or the like. In particular, the present invention relates to reduction of the number of dummy substrates for reducing the running cost of the apparatus and improvement of film quality stability in a reactive sputtering process.

[0002]

2. Description of the Related Art Recently, a film forming apparatus for a substrate having a diameter of 300 mm has been receiving attention. The reason is that the substrate size is 2
This is because the productivity is higher by 2.25 times as large as the area ratio of 00 mm, and the investment efficiency is greatly improved in this respect.

A shutter plate has been used for a long time in a sputtering apparatus which is one of film forming apparatuses. The purpose is that when the sputtering chamber is opened to the atmosphere and the target or the shield is replaced, a natural oxide film is attached to the target surface. Shielding the substrate from native oxide sputtering is often the case, as the film quality is often impaired.

There is also a method in which a dummy substrate is used in place of a regular substrate and sputtering is performed until a natural oxide film on a target surface is removed. However, the silicon substrate is 1mm thick
Since the thickness of the sputter-deposited film cannot be made too large, it is necessary to use a large amount of dummy substrates.
For example, the number of dummy substrates used for standard target cleaning with a substrate having a diameter of 200 mm is about 100, although it varies depending on the type of film.

[0005] However, the cost of the substrate is extremely high, and therefore, how to reduce the number of dummy substrates is becoming important in reducing the production cost.

In such a case, the conventionally used shutter type target cleaning is effective. FIG. 6 shows a prior art example of this method. In FIG. 6, 1 is a sputtering chamber, 2 is a magnet, 3 is a target, 4 is an adhesion shield, 5 is a shutter plate, 8 is a substrate holder, 9 is a support bracket, 11 is a shaft, 12 is a rotating mechanism, 13 Is a vacuum pump, 14 is a DC power supply, 15 is a housing, 16 is an exhaust chamber, 17 is a main valve, 1
Reference numeral 8 denotes a magnet rotating shaft.

Conventionally, the method of using the shutter plate 5 is as follows. For example, when the sputtering chamber is exposed to the atmosphere by exchanging the target, a thin native oxide film is formed on the surface of the target 3. In order to remove the natural oxide film, the shutter plate 5 is provided above the substrate holder 8 and sputtering is performed.

The shutter plate 5 is normally retracted to the exhaust chamber 16 side by a moving mechanism constituted by a rotating mechanism 12, a shaft 11, and a support fitting 9, so that when the target cleaning is performed, the target 3 and the substrate are removed. It is moved between the holders 8. Thus, the target cleaning is started after the substrate holder 8 comes to a position that is "invisible" geometrically from the target, that is, after the substrate holder 8 is shielded.

After the target cleaning is performed and the natural oxide film is sufficiently removed from the surface of the target 3,
It is a general method that the shutter plate 5 is retracted to the exhaust chamber 16 side by a moving mechanism including the rotating mechanism 12, the shaft 11, and the support fitting 9 to perform the product processing.

[0010] In addition, in the case of reactive sputtering, for example, when the target surface is covered with a nitride such as a TiN film, film peeling may occur therefrom and become a particle source. In such a case, a certain amount of Ti
It is known and effective that a method of removing the TiN film by performing plasma cleaning of the target surface after treating the N thin film is effective.

FIG. 7 shows another example of the prior art. FIG.
Shows a state in which the disk 6 is moved from the exhaust chamber 16 into the sputtering chamber by a disk moving mechanism (not shown) and is set on the substrate holder 8.

Thereafter, the above-described target cleaning is performed to deposit a thin film on the disk 6 to prevent the film from adhering to the substrate holder 8. This method is effective for a film type in which film peeling from the shield is likely to occur, such as in reactive sputtering film formation, because the film can be uniformly formed on the shield around the substrate holder 8.

In recent years, in the semiconductor manufacturing process, miniaturization has been rapidly progressing in parallel with increasing the diameter of substrates in order to improve investment efficiency. By miniaturization, the number of chips per substrate can be increased. In order to improve the yield of this miniaturized device, it is important to further reduce the number of particles having a small particle size. For this purpose, it is more effective that the target cleaning method is not the shutter method but the disk method similar to the dummy substrate deposit.

[0014]

As described in the prior art example, since a conventionally used shutter plate is made robust, a large amount of target cleaning can be performed at once by using this shutter plate. You can do it. That is, if the shutter method is adopted as a method of target cleaning, the number of dummy substrates used can be greatly reduced.

However, in addition to the cleaning of the target surface, film peeling from a film adhering to the shield is also a major factor of particle generation, and if film peeling from the film cannot be prevented, a miniaturized device in the future will be manufactured stably. It is difficult.

On the other hand, if target cleaning using a dummy substrate is performed, film peeling can be prevented by a paste effect (wall coating effect) on a shield plate, unlike when a shutter plate is used. However, in this case, although effective for particle reduction, a large number of dummy substrates are required, which increases running costs.

In order to improve the above problem, a disk-type pseudo substrate has been partially used as a target cleaning method. In the case of the disk system, the disk is thicker and harder to break than the substrate, and thus has the advantage that the amount of sputter deposition per substrate can be increased by about one digit compared to that of the dummy substrate.

However, if too much is deposited by this method, film peeling may occur due to stress in the deposited film. In particular, a nitrogen compound such as TiN (titanium nitride) or WN (tungsten nitride) generally has a high stress value and easily causes film peeling. If a disk on which such a film is deposited in a large amount is transported through the transport chamber and the load lock chamber after processing, particles are transported while being scattered on the transport path, which has an adverse effect.

Thus, for target cleaning,
The adoption of the conventional method using a shutter plate is effective in greatly reducing the number of dummy substrates used, but is ineffective in reducing particles. On the other hand, if a conventional method of depositing a dummy substrate is adopted for target cleaning, particles can be reduced, but a large amount of the dummy substrate is required and the running cost is increased.

An object of the present invention is to improve such problems of the prior art.

[0021]

In order to solve the above-mentioned problems of the prior art, a sputtering apparatus proposed by the present invention comprises a sputtering chamber in which a substrate holder and a target are arranged facing each other, Disposed on the exhaust chamber side adjacent to the chamber, supporting the shutter plate and the disk, respectively, and holding the shutter plate and the disk between the substrate holder and the target in the sputtering chamber and the exhaust chamber side, respectively. And a moving mechanism for moving the shutter between the shutter plate and the disk between the substrate holder and the target in the sputtering chamber, thereby shielding the substrate holder from the target. In the state,
The target surface can be sputtered.

With the sputtering apparatus having such a configuration, it is possible to selectively employ a method using a shutter plate and a method using a disk for target cleaning.

For example, at the time of target cleaning performed when the sputtering chamber is exposed to the atmosphere, the moving mechanism moves the shutter plate between the substrate holder and the target in the sputtering chamber. Between a product lot process used in target cleaning in such a case and performed in a sputtering chamber (that is, a process performed on a plurality of substrates to be processed in which one unit is determined as a lot in advance) and a product lot process During the target cleaning, the moving mechanism may move the disk between the substrate holder and the target in the sputtering chamber so that the disk is used at the time of the target cleaning in such a case. it can.

[0024] Thus, the effect of greatly reducing the number of dummy substrates used by the method using a shutter plate for target cleaning, and the effect of reducing particles and the number of dummy substrates used by the disk method are combined.
The running cost of the sputtering apparatus can be reduced, the operation rate can be improved, and the film quality can be improved.

In the sputtering apparatus of the present invention, the moving mechanism supports the shutter plate at a position closer to the position where the target is arranged, and holds the disk at a position closer to the position where the substrate holder is arranged. The shutter plate or the disk can be sputtered on the shutter plate or the disk in a state where one of the shutter plate and the disk is moved between the substrate holder and the target in the sputtering chamber.

When the target cleaning is performed by disposing the disk at the same position as the substrate placed on the substrate holder, a film can be deposited on shields around the substrate holder, which is effective as a measure against particles. By performing the target cleaning of the disk supported by the moving mechanism at a position closer to the position where the substrate holder is disposed by the method described in detail below, It can be efficiently placed at the same position as the substrate placed on the holder.

On the other hand, since the disk has a small plate thickness, it is desirable to use a shutter plate having a robust structure for target cleaning (a large amount of spatter) after maintenance. According to the above-described mechanism of the present invention, the disk mechanism and the use of the shutter plate can be efficiently used depending on the application by employing the above-described mechanism.

In the sputtering apparatus of the present invention, the operation of placing a disk on the substrate holder to form a film on the shield around the substrate holder during plasma cleaning is as follows in the sputtering apparatus of the present invention. Is realized by a simple mechanism.

In the sputtering apparatus according to the present invention, the moving mechanism and the substrate holder are vertically movable, and are provided in the substrate holder and penetrate the substrate holder by the lowering operation of the substrate holder. A pin-shaped guide or a pin-shaped guide provided near the substrate holder is configured to protrude above the surface of the lowered substrate holder on the side facing the target.

The support of the disk by the moving mechanism is as follows.
The disk is mounted on the upper surface of the moving mechanism on the front end side of the support arm.

Then, the tip of the support arm of the moving mechanism is moved between the substrate holder and the target in the sputtering chamber with the disk mounted, and the pin-shaped guide is lowered by the lowering of the substrate holder. The substrate holder protrudes above a surface on a side facing the target.

Here, when the moving mechanism descends,
The disc mounted on the support arm is placed on the pin-shaped guide, and after the support arm of the moving mechanism returns to the exhaust chamber side, the substrate holder is raised, and the substrate is moved from the pin-shaped guide to the substrate. The disk is received on the surface of the holder facing the target, and the disk is mounted on the surface of the substrate holder facing the target.

As described above, since the substrate holder can be raised and lowered in the vertical direction, the direction in which the substrate holder approaches the target or the direction in which the disk is separated from the target with the disc mounted on the substrate holder as described above. To adjust the distance (T / S distance) between the target and the substrate holder.

In the sputtering apparatus of the present invention, the shutter plate and the disk have a high heat resistance (that is, a high melting point) and a material having a high mechanical strength, for example,
It is desirable to be composed of any material among titanium, stainless steel, carbon and silicon carbide.

[0035]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below with reference to FIGS.

FIG. 1 is a longitudinal sectional view of a preferred embodiment of the present invention. In FIG. 1, 1 is a sputtering chamber, 2 is a magnet,
3 is a target, 4 is an adhesion shield, 5 is a shutter plate, 6 is a disk, 7 is a disk support arm, 8 is a substrate holder, 9a is a shutter plate support, 9b is a disk support, 11 is a shaft, and 12 is a rotation. Mechanism, 13 is a vacuum pump, 14 is a DC power supply, 15 is a housing, 16
Is an exhaust chamber, 17 is a main valve, and 18 is a magnet rotating shaft. The same components as those in the conventional sputtering apparatus shown in FIG. 6 are denoted by the same reference numerals as described above, and detailed description thereof is omitted. In addition, the sputtering mechanism is the same as that described in the related art, and a description thereof will be omitted.

At the time of target cleaning, gas ions collide with the target 3 and sputter the surface of the target 3.

This sputtering is an effective cleaning method especially for reactive sputtering such as reactive sputtering. The reason is based on the following mechanism. For example, in the case of TiN (titanium nitride), if the erosion on the surface of the target 3 is not uniform, the nitride may be deposited on the surface of the target 3 and may not be removed, so that particle generation and film quality instability are observed.
Usually, in the case of reactive sputtering, sputtering is performed by mixing argon gas and nitrogen gas. In this cleaning process, nitrogen gas is removed, and sputtering with argon gas ions removes nitride on the surface of the target 3. By doing so, dust from the target 3 can be removed. Therefore, such sputter cleaning is effective in reducing particles for reactive sputtering and stabilizing film quality.

However, the film during the plasma cleaning contains many impurities and cannot be used for products as a matter of course.

Therefore, the shutter plate 5 is moved from the inside of the exhaust chamber 16 to the position between the substrate holder 8 and the target 3 in the sputtering chamber 1 by the shutter plate moving mechanism including the shutter plate support 9a, the shaft 11, and the rotating mechanism 12. Then, the surface of the target 3 is sputtered while the substrate holder 8 is shielded from the target 3.

As described above, since the substrate holder 8 is shielded from the target 3, no film adheres to the substrate placed on the substrate holder 8 during this target cleaning.

Here, as described in the prior art, even when the shutter plate 5 is used, the film does not adhere around the substrate holder 8, so that film peeling therefrom may occur and particles may be generated. . In addition, since the film adheres to a part of the deposition-preventing shield 4, film peeling from the film may occur and may be generated as particles. That is, in the method using the shutter plate 5 at the time of target cleaning, as described in the related art, generation of particles is unavoidable. However, a large amount of target cleaning is required to remove a natural oxide film at the time of initial target 3 replacement. Thus, performing target cleaning using the shutter plate 5 in this manner is effective because the number of dummy substrates to be used can be significantly reduced and cost can be reduced as compared with the method using a dummy substrate. It is.

Thereafter, after a certain number of products are processed, there is a risk that a thin film is deposited on the shield and film peeling from the shield may occur. Therefore, there is a problem only with the method using the shutter plate 5 at the time of target cleaning.

In the sputtering apparatus of the present invention,
A disk moving mechanism including a disk support arm 7, a disk support 9b, a shaft 11, and a rotating mechanism 12 is also provided in the exhaust chamber 16, and a shutter plate including the shutter plate supporting metal 9a, the shaft 11, and the rotating mechanism 12 is provided. After moving the shutter plate 5 from between the substrate holder 8 and the target 3 in the sputtering chamber 1 into the exhaust chamber 16 by the moving mechanism, the disk 6 is moved by the disk moving mechanism to the exhaust chamber 1.
6, the substrate holder 8 in the sputtering chamber 1 is moved between the target 3 and the
The surface of the target 3 can be sputtered in a state where the target 3 is shielded.

The mechanism for moving the shutter plate 5 and the disk 6 supports the shutter plate 5 at a position closer to the position where the target 3 is disposed as shown in FIG. The disk 6 is supported at a position closer to the position where the shutter 6 is located, so that either the shutter plate 5 or the disk 6 can be moved between the substrate holder 8 and the target 3 in the sputtering chamber 1. Has become.

The sputtering apparatus of the present invention
As described above, one of the shutter plate 5 and the disk 6 is provided between the substrate holder 8 in the sputtering chamber 1 and the target 3.
In this state, it can be sputtered on the shutter plate 5 or the disk 6 in a state where the shutter plate 5 or the disk 6 is moved.

According to the sputtering apparatus of the present invention, plasma cleaning can be performed after placing the disk 6 on the substrate holder 8 as shown in FIG. 2 by a method described later with reference to FIG. By this operation, substantially the same effect as the sputter cleaning using the dummy substrate can be obtained. That is, the shield around the substrate holder 8 is also Ti
The paste is applied, and a thin film having good adhesion is deposited also on the shield around the substrate holder 8, so that dust generation from the shield component can be prevented.

Also, by using the disk 6 as described above, a larger amount of thin films can be deposited as compared with the case where a dummy substrate is used, and the number of dummy substrates used can be greatly reduced.

Incidentally, in the case of an Al film or a TiN film, it is possible to exchange disks in accordance with the target exchange timing.

As described above, according to the sputtering apparatus of the present invention, one of the shutter plate 5 and the disk 6 is selectively moved from the exhaust chamber 16 to the position between the substrate holder 8 and the target 3 in the sputtering chamber 1. Then, the substrate holder 8 is shielded from the target 3 and efficient plasma cleaning can be performed.

FIG. 3 shows an example of a mechanism for moving the shutter plate 5 and the disk 6 employed in the sputtering apparatus of the present invention. The disk moving mechanism including the disk supporting arm 7, the disk supporting member 9b, the shaft 11, and the rotating mechanism 12, and the shutter plate moving mechanism including the shutter plate supporting metal 9a, the shaft 11, and the rotating mechanism 12 include the rotating mechanism 12 and the shaft 11. , And can be driven independently by the rotational force given via the.

The mechanism for moving the disk and the mechanism for moving the shutter plate can be moved up and down in the vertical direction by a drive mechanism (not shown).

The shutter plate 5 is fixed to a shutter plate support 9a, and is housed in the exhaust chamber 16 during normal product processing in the sputtering chamber 1. When the shutter plate 5 is used for sputter cleaning, the rotation force applied from the rotation mechanism 12 via the shaft 11 causes the shutter plate support 9
a rotates into the sputtering chamber 1, moves the shutter plate 5 between the substrate holder 8 and the target 3, and shields the substrate holder 8 from the target 3 by the shutter plate 5. Is shielded from sputtered particles from the target 3.

The disk 6 is mounted on the distal end side of a disk support arm 7 whose base end is fixed to a disk support fitting 9b, and during normal product processing in the sputtering chamber 1, It is housed in an exhaust chamber 16.

In the sputtering apparatus of the present invention, the substrate holder 8 can move up and down in the vertical direction.
By the lowering operation of the substrate holder 8, a pin-shaped guide (not shown) provided in the substrate holder 8 and penetrating the substrate holder 8 or a pin-shaped guide provided near the substrate holder 8 ( (Not shown) protrudes above the surface of the lowered substrate holder 8 on the side facing the target 3.

When the disk 6 is set on the substrate on the substrate holder 8, the following procedure is performed.

The distal end of the support arm 7 of the disk moving mechanism is moved between the substrate holder 8 and the target 3 in the sputtering chamber 1 with the disk 6 mounted, and the pin holder is moved downward by the lowering of the substrate holder 8. A guide (not shown) protrudes above the surface of the lowered substrate holder 8 on the side facing the target 3.

When the disk moving mechanism is lowered, the disk 6 mounted on the support arm 7 is mounted on the pin-shaped guide (not shown).

After the support arm 7 of the disk moving mechanism is rotated by the rotational force applied from the rotating mechanism 12 via the shaft 11 to return to the exhaust chamber 16 side, the substrate holder 8 is raised and the pin-shaped The disc 6 is received from a guide (not shown) on the surface of the substrate holder 8 facing the target 3, and the disk 6 is placed on the surface of the substrate holder 8 facing the target 3. Will be

FIG. 4 is a diagram showing an example of a flow for processing a TiN product using the sputtering apparatus of the present invention.
The horizontal axis indicates the number of processed wafers after the target and shield replacement.

After the maintenance treatment, when the vacuum chamber 1 is evacuated to a predetermined pressure, the target cleaning is started. As described above, the shutter plate 5 is used for cleaning a large amount of targets after the initial maintenance. That is, the natural oxide film adhering to the surface of the target 3 is removed, but the amount of target shaving is large (Al
The shutter plate 5 is used because the film thickness is about 100 microns.

Here, in order to withstand the stress of the thin film, the shirtter plate 5 is made of a material having a high heat resistance (that is, a high melting point) and a high mechanical strength with a plate thickness of about 5 mm to 10 mm. For example, it is desirable to use a stainless plate, a Ti plate, a W plate, or the like.

Next, in order to stabilize the surface of the Ti target by nitriding, several TiN dummy layers are sputtered. If this step is omitted, that is, if the product processing is carried out immediately after the target cleaning, the film quality of the product becomes unstable because the surface of the target 3 is not nitrided. Here, without using the shutter plate 5, the disk 6
Is used. That is, like a TiN dummy, several hundreds
A disk is effective for a thin disk having a thickness of about 0 Å.

Thereafter, product processing is started, and after several hundred sheets of product are processed, a Ti dummy is performed. The purpose of this is that if TiN continuously adheres to the shield, the stress of the TiN film is high and the adhesion to the shield is weak, so that film peeling occurs and becomes particles. Is to prevent it.

The Ti film has high adhesion to the shield and the TiN film, and has an effect of preventing the TiN film from peeling (wall coating effect). In this case, it is effective to use the disk 6 to sputter the entire shield. Shutter plate 5
Can be used to perform sputter cleaning on the surface of the target 3 (there is an effect of preventing peeling of the TiN film from the target), but film peeling from the shield cannot be completely prevented, so that particle generation can be completely suppressed. Absent.

Next, since the target surface has a Ti surface, the above-described nitrided TiN dummy before product processing is processed using the disk 6. The procedure of the Ti dummy and TiN dummy product processing is repeated until the target life. After that, maintenance is performed, and the process is repeated from the initial target cleaning. By exchanging the shutter plate 5 and the disk 6 at the time of this maintenance, an efficient duty ratio can be obtained.

FIG. 5 summarizes the effects of the present invention described above. The shutter plate of the prior art is effective during target cleaning, but film peeling from the shield occurs during dummy deposition. Although the disk method is effective in generating particles, it is not suitable to cover with a disk alone because a large amount of film is deposited during target cleaning.

Therefore, it is effective to combine the shutter type and the disk type as in the method of the present invention and selectively use them according to the application, and replace the parts in accordance with the maintenance cycle, in order to reduce the running cost and improve the working efficiency. Become.

As described above, the preferred embodiments of the present invention have been described with reference to the accompanying drawings. However, the present invention is not limited to such embodiments, but has the technical scope understood from the description of the claims. It is possible to change to various embodiments.

For example, between the exhaust chamber 16 and the target 3 and the substrate holder 8 in the sputtering chamber 1,
As the shutter plate moving mechanism and the disk moving mechanism for moving the shutter plate 5 and the disk 6, a sliding type moving mechanism can be adopted instead of the type driven by the rotational force given from the rotating mechanism 12. .

[0071]

According to the sputtering apparatus of the present invention,
For target cleaning, a method using a shutter plate and a method using a disk can be selectively adopted. Therefore, the target cleaning uses a method that uses a shutter plate to significantly reduce the number of dummy substrates used, and the disk method combines particle reduction and the effect of reducing the number of dummy substrates used to reduce the running cost of the sputtering system, improve the operating rate, The film quality can be improved stably.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a sputtering apparatus of the present invention.

FIG. 2 is a longitudinal sectional view illustrating a configuration at the time of plasma cleaning in the sputtering apparatus shown in FIG. 1;

FIG. 3 is a perspective view in which a shutter plate and a disk moving mechanism in the sputtering apparatus of the present invention are partially omitted.

FIG. 4 shows TiN using the sputtering apparatus of the present invention.
The figure which shows an example of the processing process which processes a product.

FIG. 5 is a comparison table between the sputtering apparatus of the present invention and a conventional technique.

FIG. 6 is a longitudinal sectional view of a conventional sputtering apparatus.

FIG. 7 is a vertical cross-sectional view illustrating a configuration during plasma cleaning in a conventional sputtering apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Magnet 3 Target 4 Deposition shield 5 Shutter plate 6 Disk 7 Disk support arm 8 Substrate holder 9a Shutter plate support 9b Disk support 11 Shaft 12 Rotation mechanism 13 Vacuum pump 14 DC power supply 15 Housing 16 Exhaust chamber 17 Main Valve 18 Magnet rotary shaft

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiji Itani 5-8-1, Yotsuya, Fuchu-shi, Tokyo Anelva Corporation F-term (reference) 4K029 AA02 AA04 BD01 CA06 DA12 JA01 KA01 5F103 AA08 BB16 BB22 BB49 DD28 PP01 RR01

Claims (5)

[Claims] 1. A sputter chamber in which a substrate holder and a target are disposed facing each other and an exhaust chamber adjacent to the sputter chamber for supporting a shutter plate and a disk, respectively. A moving mechanism for moving the shutter plate and the disc between the substrate holder and the target in the sputtering chamber and the exhaust chamber side, respectively, by the moving mechanism, either the shutter plate or the disc is moved. A sputtering apparatus characterized in that the target surface is sputtered while being moved between a substrate holder and a target in the sputtering chamber and the substrate holder is shielded from the target. 2. The moving mechanism supports a shutter plate at a position closer to a position where a target is arranged, and supports a disk at a position closer to a position where a substrate holder is arranged. 2. The sputtering apparatus according to claim 1, wherein sputtering can be performed on the shutter plate or the disk while one of the shutter plate and the disk is moved between the substrate holder and the target in the sputtering chamber. 3. The moving mechanism and the substrate holder are vertically movable respectively, and by a lowering operation of the substrate holder, a pin-shaped guide provided in the substrate holder and penetrating the substrate holder, Alternatively, a pin-shaped guide provided in the vicinity of the substrate holder is configured to protrude above the surface of the lowered substrate holder on the side facing the target. A disk is mounted on the upper surface of the support arm tip side of the mechanism, and the support arm tip side is moved between the substrate holder and the target in the sputtering chamber with the disk mounted, and the substrate holder With the lowering of the pin-shaped guide,
After projecting above the surface of the lowered substrate holder on the side facing the target, the disk mounted on the support arm is placed on the pin-shaped guide by the lowering of the moving mechanism, and moved. After the end of the support arm of the mechanism returns to the exhaust chamber side, the substrate holder moves up and receives the disk from the pin-shaped guide onto the surface of the substrate holder facing the target, and 3. The sputtering apparatus according to claim 1, wherein the disk is placed on a surface facing the side. 4. The sputtering apparatus according to claim 1, wherein the shutter plate and the disk are made of any one of titanium, stainless steel, carbon, and silicon carbide. 5. A target cleaning device according to claim 1, wherein the shutter plate is moved between the substrate holder and the target in the sputtering chamber by the moving mechanism during target cleaning performed when the sputtering chamber is exposed to the atmosphere. 5. The method according to claim 1, wherein the disk is moved between the substrate holder and the target in the sputtering chamber by the moving mechanism during the target cleaning between the product lot processing and the product lot processing. The sputtering device according to claim 1.