JP2002373851A - Exposure apparatus and method for manufacturing semiconductor device, semiconductor manufacturing factory, method for maintaining exposure apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an aligner in which the generation of uneven distribution of intensity of an exposure light can be prevented in an exposure region. SOLUTION: An aligner employs an UV ray of a wavelength range having a characteristic of being absorbed or reacting to an oxygen or humidity existing in an exposure optical path. The aligner is constituted in such a way that high purity inert gas is allowed to flow through a gap between an exposure optical system and a wafer or a reticle. In this case, near an opening for jetting the high purity inert gas, an high impurity gas bank like the opening is formed to maintain the purity of the gas to be supplied to the gap.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device, for example,
The present invention relates to an exposure apparatus used for manufacturing an imaging device, a liquid crystal display element, a thin-film magnetic head, and other micro devices, and more particularly, to an exposure apparatus that performs exposure using short-wavelength light. The present invention relates to an exposure apparatus capable of suppressing the reduction and generation of ozone, a method of manufacturing a semiconductor element or the like using the exposure apparatus, a method of maintaining the exposure apparatus, and a semiconductor manufacturing plant having the exposure apparatus.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device or the like, an exposure apparatus that exposes a pattern image of a photomask (including a reticle) onto a photosensitive substrate via a projection optical system is used. In recent years, semiconductor integrated circuits have been developed in the direction of miniaturization, and in photolithography processes, the wavelength of photolithography light sources has been reduced.

However, vacuum ultraviolet rays, especially 250 n
m, for example, a KrF excimer laser (wavelength: 248 nm), an ArF excimer laser (wavelength: 19 nm).
3 nm), F ₂ laser (wavelength 157 nm), or YA
When using light such as a harmonic such as a G laser as exposure light, there have been problems such as a reduction in light intensity and generation of harmful ozone gas due to absorption by oxygen and the like.

Therefore, conventionally, in an exposure apparatus having a light source such as an ArF excimer laser, only the optical path portion is sealed, and the gas inside is replaced with a gas containing no oxygen, such as nitrogen, so that the light transmittance is reduced. Was trying to avoid a drop in water and ozone generation.

[0005]

However, the sealing of only the optical path portion is performed by using a movable part such as a wafer stage or a reticle stage, as in a so-called step-and-repeat (repeated batch exposure for each step) type exposure apparatus. However, it is difficult for an apparatus existing in the optical path, and it is inevitable that exposure light is partially exposed to air. Light source adapted to receive a more sensitively influence of oxygen than conventional when so used F ₂ laser, the exposure light is attenuated by a few centimeters in the oxygen concentration in the atmosphere.

Therefore, an inert gas is supplied to an illumination optical unit and a reticle for projecting illumination light, a projection optical unit for projecting the reticle and projection light, and an inert gas to the projection optical unit and a housing space of a wafer to be exposed. Exposure apparatuses capable of performing exposure in an atmosphere of a required inert gas formed by the method have already been proposed.

FIGS. 3 (a) and 3 (b) schematically show a structure for forming an atmosphere of an inert gas as a conventional exposure apparatus.

In an exposure apparatus on the premise of mass production of devices in a production line, the replacement performance of replacing an atmosphere in an optical path space (gap) for irradiating exposure light with an exposure target with a high-purity inert gas is a wafer replacement. Or the stage movement of the stage holding the wafer to the exposure position, etc.
It is necessary to be able to follow in a short time.

For this purpose, it is necessary to flow a high-purity inert gas such as nitrogen at a high speed into the gap between the wafer and the optical member in the projection optical unit. In order to make the gas flow at a high speed, a mechanism for arranging a gas outlet such as a nozzle near the gap and applying pressure to blow the gas in one direction is required.

FIG. 3A is a diagram showing a structure relating to gas blowing in a conventional example. Here, 1 is a projection optical unit, and 2 is an optical member constituting the projection optical unit. Reference numeral 3 denotes a wafer to be exposed. From the nozzle 4 to the gap between the optical member 2 and the wafer 3,
The high-purity inert gas pressurized by the pressure regulator 20 is ejected.

At this time, a phenomenon occurs that the gas around the nozzle is entrained as the gas flows at a higher speed. This phenomenon is shown in FIG. FIG. 3B is a view of the wafer 3 as viewed from above (in the direction of the arrow in FIG. 3A), and blow-out nozzles 4 a-4 e are arranged in parallel with the exposure region 11.

The flow of the inert gas blown from each nozzle is schematically shown as hatched portions 12a and 12a.
b, 12c. In the hatched area 12a, the purity of the inert gas of the gas is higher, and the purity of the inert gas is lower in the order of 12b and 12c. As shown in the figure, when a high-purity inert gas is blown at a high speed, a low-purity gas near the nozzle is entrained and reaches the exposure region 11. In this case, despite the high-purity inert gas flowing, the gas around the caught nozzle is mixed, and as a result, the concentration unevenness of the inert gas in the exposure region 11 as shown in FIG. appear.

If the concentration of the inert gas is uneven in the space in the exposure area, the intensity of the exposure light transmitted through the area becomes uneven due to the uneven concentration.

On the other hand, when the inert gas is blown at a low speed such that the gas around the nozzle is not entrained, the gap between the wafer and the projection optical unit is filled with the high-purity inert gas within a desired time. The atmosphere cannot be formed, and the throughput is limited.

Further, due to factors such as an increase in the size of the device and a reduction in the exposure wavelength, recently, a step-and-scan exposure method is often used. As the throughput of the exposure apparatus increases, the scanning speed also increases. At present, the reticle moves across the exposure optical path at a high speed of several meters per second, and at a high speed of 1/4 or 1/5 of a wafer. When the wafer or reticle moves at a high speed and enters the exposure optical path, the gas existing on the upstream side in the moving direction is dragged into those surfaces.

FIG. 4 is a view showing a state in which an environment in which a gap between the illumination optical unit 14, the reticle 13, and the projection optical unit 1 is filled with a high-purity inert gas is formed. FIG. 4 shows a case where a high-purity inert gas is flowed in a direction perpendicular to the plane of the paper to form an exposure optical path area in an environment of the high-purity inert gas. The hatched portion in FIG. 4 indicates a high-purity inert gas region. At this time, when the reticle 13 is moved at a high speed from the left side to the right side with respect to the plane of the paper, the gas on the left side of the exposure optical path area where the high-purity inert gas is not formed is taken into the exposure optical path area. As a result, the concentration of the inert gas becomes low at the boundary surface with the reticle, so that the concentration of the inert gas becomes uneven in the exposure optical path region, which may cause unevenness of the exposure intensity.

[0017]

In view of the above problems, an exposure apparatus and the like according to the present invention are mainly characterized by having the following arrangement.

That is, an exposure apparatus for exposing a pattern of an original onto a substrate includes an illumination optical unit and the original, a gap region formed by the original and the projection optical unit, and / or a projection optical unit and the substrate. A first gas supply unit for supplying an inert gas in a horizontal direction with respect to the surface of the original and / or the substrate in the gap region formed, and a first gas supply unit near the gas supply unit of the first gas supply unit; Supplying an active gas to form a second gas reservoir;
Gas supply means, and the inert gas which forms the gas reservoir formed by the second gas supply means together with the inert gas supplied by the first gas supply means is provided in the gap region. It is characterized in that it supplies the inert gas with a uniform purity in the region.

Preferably, in the above exposure apparatus, the first gas supply means and the second gas supply means
It is characterized by supplying the same kind of inert gas.

Preferably, in the above-described exposure apparatus, the first and second gas supply units each include an adjustment unit for adjusting a pressure of a gas supplied from a gas supply source.

Preferably, in the above exposure apparatus, the second gas supply means blows an inert gas at a lower pressure than the first gas supply means against the surface of the original and / or the substrate, and A gas reservoir is formed on the surface.

Preferably, in the above exposure apparatus, the first gas supply means is provided on both the front side and the back side of the original in a gap area formed by the illumination optical unit and the projection optical unit and the original. On the other hand, the inert gas is supplied.

Preferably, in the above-mentioned exposure apparatus, the second gas supply means forms the pool of the inert gas in a region before the original and / or the wafer enters the gap region. I do.

Preferably, in the above exposure apparatus, the inert gas contains a high-purity nitrogen gas and a helium gas.

Preferably, in the above exposure apparatus, the gap region includes an optical path region of light emitted from the illumination optical unit or the projection optical unit to the original or the substrate.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS <Structure of Exposure Apparatus> FIG. 5 is a schematic sectional view showing a schematic positional relationship among an illumination optical unit, an original (reticle), a projection optical unit, and a substrate (wafer) in the exposure apparatus. In the figure, reference numeral 510 denotes an illumination optical unit which irradiates an original (reticle) 515 with illumination light emitted from a light source (not shown).

Reference numeral 520 (520a-520c) is a member that transmits exposure light.

Reference numeral 515 denotes an original plate (reticle);
Reference numeral denotes an original stage on which an original is mounted and can be moved in a predetermined scanning direction.

Reference numeral 540 denotes a projection optical unit which projects illumination light transmitted through the reticle onto a substrate 540 to be exposed, thereby exposing original information.

Reference numeral 550 holds a substrate (wafer) 540 and controls the position of the substrate at a predetermined position for exposure.

<Embodiment 1> FIG. 1A is a view schematically showing a configuration of an exposure area in an exposure apparatus according to the present invention, and FIG. 1B employs the configuration of FIG. It is a figure for roughly explaining the distribution state of the inert gas in the case. In FIG. 1B, the exposure area of the wafer stage and the projection exposure unit is depicted two-dimensionally, and shows an example of the concentration distribution of the high-purity inert gas.

In FIG. 1A, reference numeral 1 denotes a projection optical unit, and reference numeral 2 denotes a final optical member of the projection optical unit which faces the wafer 3 to be exposed. Reference numeral 3 denotes a wafer and a wafer stage for holding the wafer and positioning the wafer at a predetermined exposure position. Reference numeral 4 denotes a projection optical unit 1 and a high-speed exposure space (gap) formed between the final optical member 2 and the wafer 3. This is a blowing nozzle for flowing a high-purity inert gas through the nozzle.

The blow-out nozzle 4 has a configuration in which a plurality of nozzles are arranged in parallel, as indicated by reference numerals 4a to 4e in FIG.

Reference numeral 5 denotes an in-machine pipe for supplying an inert gas at a high pressure from a high-purity inert gas supply unit (not shown). Reference numeral 6 denotes a predetermined high-pressure high-purity inert gas supplied by the pipe 5. And a regulator for supplying the pressure to the nozzle 4. With this regulator, a high-purity inert gas supplied in a high-pressure state can be adjusted to a desired pressure.

Reference numeral 7 denotes a second nozzle which is disposed vertically with respect to the opening of the nozzle 4, and which is provided with the nozzle 7 (the first nozzle) with respect to the horizontal blowing from the nozzle 4 (first nozzle). 2 nozzle) sprays a high-purity inert gas from top to bottom.

Reference numeral 8 denotes a second regulator for distributing the high-purity inert gas supplied from the pipe 5 to the nozzle 7 at a low pressure.

Reference numeral 9 denotes an exposure optical axis, and a hatched area 10 indicates an exposure optical path area. Reference numeral 11 denotes an exposure area formed on the wafer by the exposure optical path area 10, and 120a-
c indicates the concentration distribution of the inert gas. Arrows in the figure schematically indicate the flow speed of the high-purity inert gas in the direction and size.

An embodiment according to the present invention will be described with reference to FIGS. 1 (a) and 1 (b). In FIG. 1A, the flow of the high-purity nitrogen gas is indicated by an arrow, and in FIG. 1B, the nitrogen gas concentration distribution is shown in a plan view.

In order to allow high-purity nitrogen gas to flow through the gap between the wafer stage (including the wafer) 3 and the final optical member 2 in the projection exposure unit 1 at high speed, high-purity nitrogen gas is supplied to the high pressure of 3 kgf / cm ² by the regulator 6. Is supplied to the nozzles 4 (4a-4e) arranged in the gap between the wafer stage and the projection exposure unit.

Further, a high-purity nitrogen gas adjusted to a low pressure of 0.03 kgf / cm ² by a regulator 8 branched from the high-purity nitrogen gas supply source is supplied to the nozzle 7. Since the high-purity nitrogen gas blown from the nozzle 7 has a low blowing pressure, a high-purity nitrogen gas reservoir is formed around the opening of the nozzle 4 without scattering.

Since the high pressure nitrogen gas is blown out from the nozzle 4 in the horizontal direction, the gas reservoir is diffused to have a low purity. Therefore, a constant amount of high purity nitrogen gas is continuously supplied, and a constant amount of high purity nitrogen gas is continuously supplied. It is necessary to form a high-purity nitrogen gas reservoir. The arrangement interval of the nozzles 4a-e and the nozzles 4a-4e
When the opening area of the nozzle 7 is determined in accordance with the distance between the nozzle 7 and the nozzle 7, the supply amount of the nitrogen gas can be obtained by a dynamic calculation.

As shown in FIG. 1B, the nozzles 4a-4
nozzles 4a-4e
And flows into the exposure optical path region 10 while involving the same high-purity nitrogen gas reservoir formed near the opening. As a result, the concentration of the nitrogen gas in the exposure optical path region 10 is maintained over the entire surface of the exposure region 11 without the gas concentration being varied in each nozzle unit as shown in FIG.
A uniform nitrogen gas concentration can be obtained.

In this embodiment, the gap between the wafer and the projection optical unit has been described.
By forming a high-purity nitrogen gas reservoir with a similar configuration for the gap between the projection optical unit and the projection optical unit, the same operation as that described in the present embodiment can be obtained. Particularly, in the case of a reticle, the same first nozzle 4 and second nozzle 7 are provided on both sides of the reticle.
By forming high-purity nitrogen gas reservoirs on both sides of the reticle and forming high-purity nitrogen gas flows in both gaps from the reticle both sides, the nitrogen gas concentration in the exposure optical path area can be more effectively uniformed. Becomes possible.

Although high-purity nitrogen gas is used in this embodiment, the same structure can be obtained by using helium or the like as long as it is an inert gas having no absorption spectrum in the wavelength region of light used for exposure. The same effect can be expected.

<Embodiment 2> FIGS. 2A and 2B show a second embodiment of the present invention. Here, FIG. 2A is a diagram showing a configuration focusing on an original (reticle) portion.
FIG. 2B is a diagram schematically showing the distribution of high-purity nitrogen gas in FIG. In the figure, reference numeral 13 denotes a reticle mounted on a reticle stage (not shown) and scanned.
Reference numeral 14 denotes an illumination optical unit for irradiating the reticle with illumination light. The area 15 indicates the illumination light path area, and the area 10a
Indicates an optical path region of the light transmitted through the reticle 13.

4 is a reticle 13 similar to the first embodiment.
And a nozzle for flowing high-purity nitrogen gas in the gap between the illumination optical unit 14 and the gap between the reticle 13 and the projection optical unit 1. The nozzle is arranged so as to form an environment in which the gas is filled in a direction perpendicular to the plane of the drawing. ing.

The illumination light guided from the illumination optical unit 14 irradiates the reticle 13 and, after obtaining circuit pattern information of the device by the reticle 13, enters the projection optical unit 1. The reticle 13 scanned as indicated by an arrow 20 shown in FIG.
Since the gap is provided between the two optical units, the gap between each optical unit exists on both the front side and the back side of the reticle. Therefore, it is necessary to form a high-purity nitrogen gas reservoir on both surfaces of the reticle 13 in order to form an environment filled with uniform high-purity nitrogen gas.

As described in the conventional example, in the scanning exposure method, the reticle enters the exposure optical path at a high speed of several meters per second and the wafer at a high speed of 1/4 or 1/5 thereof.

In the present embodiment, a high-purity nitrogen gas for homogenizing the high-purity nitrogen gas is blown onto the reticle before and after entering the exposure optical path. A reservoir is formed in advance, and a gas reservoir formed on the front and rear surfaces of the reticle is drawn to enter the exposure optical path.

It is assumed that a plurality of nozzles 7 for blowing high-purity nitrogen gas onto the reticle surface are arranged in parallel in a direction perpendicular to the paper surface. High-purity nitrogen gas is continuously supplied to these nozzles 7 at a pressure of 0.01 kgf / cm ² , and about 20 mm from the end of the exposure optical path area and 5 mm from the reticle surface upstream in the scanning direction.
It is installed at a distance.

Thus, a high-purity nitrogen gas reservoir is formed on the reticle surface about 30 mm upstream from the end of the exposure optical path area. When the reticle moves from this state at a speed of 3 m / s in the direction shown by the arrow, the gas in the high-purity nitrogen gas pool is entrained, and the illumination optical path area 15 and the optical path area 10 are entrained.
Enter a. Since the high-purity nitrogen gas is constantly flowing in the illumination light path 15 and the light path area 10a in the direction perpendicular to the paper surface by the nozzle 4, even if the high-purity nitrogen gas is mixed with the gas in the trapped high-purity nitrogen gas reservoir, the nitrogen gas in the space of the illumination light path 15 There is no effect on the concentration.

When a high-purity inert gas is caused to flow at a high speed from the upstream in the scanning direction, the high-speed blowing nozzle 4 is arranged in the high-purity inert gas reservoir formed by the nozzle 7. In addition, there is no concern that impurities are involved due to high-speed spraying, and there is no concern that impurities are involved due to scanning.

Further, when the scanning exposure is performed in a reciprocating manner, by installing a nozzle 70 on the opposite side of the optical axis with respect to the nozzle 7, it is possible to cope with the exposure by the reciprocating scanning.

<Example of Semiconductor Production System> Next, an example of a production system for semiconductor devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.) will be described. This includes maintenance services such as troubleshooting and periodic maintenance of manufacturing equipment installed in semiconductor manufacturing plants, and software provision.
This is performed using a computer network outside the manufacturing factory.

FIG. 6 shows the entire system cut out from a certain angle. In the figure, reference numeral 101 denotes a business establishment of a vendor (apparatus supply maker) that provides a semiconductor device manufacturing apparatus. As an example of a manufacturing apparatus, a semiconductor manufacturing apparatus for various processes used in a semiconductor manufacturing plant, for example,
Pre-process equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film formation equipment,
A flattening device, etc.) and post-process equipment (assembly device, inspection device, etc.) are assumed. In the business office 101, a host management system 10 for providing a maintenance database of manufacturing equipment
8. It has a plurality of operation terminal computers 110 and a local area network (LAN) 109 connecting these to construct an intranet. Host management system 10
8 is a gateway for connecting the LAN 109 to the Internet 105 which is an external network of the business office;
Equipped with a security function to restrict external access.

On the other hand, reference numerals 102 to 104 denote manufacturing factories of semiconductor manufacturers as users of the manufacturing apparatus. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers or factories belonging to the same manufacturer (for example, a factory for a pre-process, a factory for a post-process, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106, a local area network (LAN) 111 connecting them to construct an intranet, and a host management unit as a monitoring apparatus for monitoring the operation status of each manufacturing apparatus 106. A system 107 is provided. Each factory 10
The host management systems 107 provided in 2 to 104 are:
A gateway is provided for connecting the LAN 111 in each factory to the Internet 105 which is an external network of the factory. As a result, access to the host management system 108 on the vendor 101 side from the LAN 111 of each factory via the Internet 105 is possible, and access is limited to only users limited by the security function of the host management system 108.

Specifically, status information (for example, a symptom of a manufacturing apparatus in which a trouble has occurred) indicating the operating status of each manufacturing apparatus 106 is notified from the factory to the vendor via the Internet 105, and the notification is also provided. (For example, information instructing a coping method for a trouble, software and data for coping), and maintenance information such as the latest software and help information can be received from the vendor side. Data communication between each factory 102-104 and the vendor 101 and LAN1 in each factory
The data communication at 11 uses a communication protocol (TCP / IP) generally used on the Internet. Instead of using the Internet as an external network outside the factory, it is also possible to use a dedicated line network (such as ISDN) that cannot be accessed by a third party and has high security.

The host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network to permit access from a plurality of factories of the user to the database.

FIG. 7 is a conceptual diagram showing the entire system according to the present embodiment cut out from a different angle from FIG. In the above example, a plurality of user factories each having a manufacturing device and a management system of a vendor of the manufacturing device are connected via an external network, and the production management of each factory and at least one device are connected via the external network. The data of the manufacturing apparatus was communicated. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors and a management system of each vendor of the plurality of manufacturing apparatuses are connected via an external network outside the factory, and maintenance information of each manufacturing equipment is stored. It is for data communication. In the figure, reference numeral 201 denotes a manufacturing factory of a manufacturing apparatus user (semiconductor device manufacturer);
A manufacturing apparatus for performing various processes, for example, an exposure apparatus 202 and a resist processing apparatus 20 are provided on a manufacturing line of a factory.
Third, a film forming apparatus 204 is introduced.

Although only one manufacturing factory 201 is illustrated in FIG. 7, a plurality of factories are actually networked similarly. Each device in the factory is connected by a LAN 206 to form an intranet, and a host management system 205
The operation management of the production line is performed. On the other hand, each business establishment of a vendor (apparatus maker) such as an exposure apparatus maker 210, a resist processing apparatus maker 220, and a film forming apparatus maker 230 has a host management system 211, 221 for performing remote maintenance of the supplied apparatus. 231 which comprise a maintenance database and an external network gateway as described above. A host management system 205 that manages each device in the user's manufacturing factory; and a management system 211, 221, 231 of each device vendor
Are connected by the Internet or the dedicated line network which is the external network 200. In this system, if a trouble occurs in any of a series of manufacturing equipment on the manufacturing line, the operation of the manufacturing line is stopped, but remote maintenance is performed via the Internet 200 from a vendor of the troubled equipment. As a result, quick response is possible, and downtime of the production line can be minimized.

Each of the manufacturing apparatuses installed in the semiconductor manufacturing factory has a display, a network interface, and a computer for executing network access software and apparatus operation software stored in a storage device.

The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides, for example, a user interface having a screen as shown in FIG. 8 on a display. The operator who manages the manufacturing equipment in each factory refers to the screen and refers to the model of the manufacturing equipment (401),
Serial number (402), trouble subject (40
3), date of occurrence (404), urgency (405), symptom (4
06), information such as coping method (407), progress (408), etc. are input to input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the resulting appropriate maintenance information is returned from the maintenance database and presented on the display. Further, the user interface provided by the web browser further realizes a hyperlink function (410 to 412) as shown in the figure, so that the operator can access more detailed information of each item or use the software library provided by the vendor for the manufacturing apparatus. The latest version of software to be extracted can be extracted, and an operation guide (help information) can be extracted for reference by a factory operator.

Next, a process for manufacturing a semiconductor device using the above-described production system will be described. FIG. 9 shows a flow of the whole semiconductor device manufacturing process. In step S1 (circuit design), a circuit of a semiconductor device is designed. In step S2 (mask production), a mask on which the designed circuit pattern is formed is produced. On the other hand, in step S3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step S5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step S4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Etc. are included. Step S6
In (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step S5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

The pre-process and post-process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the above-described remote maintenance system. Also, information for production management and equipment maintenance is communicated between the pre-process factory and the post-process factory via the Internet or a dedicated line network.

FIG. 10 shows a detailed flow of the wafer process. In step S11 (oxidation), the surface of the wafer is oxidized. In step S12 (CVD), an insulating film is formed on the wafer surface. In step S13 (electrode formation), electrodes are formed on the wafer by vapor deposition. Step S1
In step 4 (ion implantation), ions are implanted into the wafer. In step S15 (resist processing), a photosensitive agent is applied to the wafer. In step S16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above.

In step S17 (development), the exposed wafer is developed. In step S18 (etching), portions other than the developed resist image are removed. Step S19
In (resist removal), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented beforehand, and if troubles occur, quick recovery is possible. Productivity can be improved.

[0068]

As described above, according to the exposure apparatus of the present invention, the gas reservoir formed by the second gas supply nozzle is formed together with the inert gas supplied by the first gas supply nozzle. By supplying the inert gas to the gap region, the purity of the inert gas in that region is made uniform, and it is possible to eliminate the occurrence of unevenness in purity.

[Brief description of the drawings]

FIG. 1A is a diagram schematically showing a configuration of an exposure area in an exposure apparatus according to the present invention, and FIG.
It is a figure for roughly explaining the distribution state of the inert gas at the time of adopting composition of (a).

2A is a diagram illustrating a configuration focusing on an original (reticle) portion, and FIG. 2B is a diagram schematically illustrating a distribution of a high-purity nitrogen gas in FIG.

FIGS. 3A and 3B are diagrams schematically showing a configuration for forming an atmosphere of an inert gas as a conventional exposure apparatus.

FIG. 4 is a diagram showing a state in which a gap between a conventional illumination optical unit 14, a reticle 13, and a projection optical unit 1 is filled with a high-purity inert gas.

FIG. 5 is a schematic cross-sectional view showing a schematic positional relationship among an illumination optical unit, an original (reticle), a projection optical unit, and a substrate (wafer) in the exposure apparatus.

FIG. 6 is a conceptual diagram of a semiconductor device production system as viewed from a certain angle.

FIG. 7 is a conceptual diagram of a semiconductor device production system viewed from another angle.

FIG. 8 is a diagram showing a specific example of a user interface.

FIG. 9 is a diagram illustrating a flow of a device manufacturing process.

FIG. 10 is a diagram illustrating a wafer process.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 502G

Claims (15)

[Claims] An exposure apparatus for exposing a pattern of an original onto a substrate, the exposure apparatus comprising: an illumination optical unit and the original; a gap region formed by the original and the projection optical unit; In the gap area formed by the substrate,
First gas supply means for supplying an inert gas in a horizontal direction with respect to the surface of the original plate and / or the substrate; and supplying an inert gas to the vicinity of a gas supply section of the first gas supply means. A second gas supply means for forming a gas reservoir, and an inert gas which is formed by the second gas supply means together with the inert gas supplied by the first gas supply means. An exposure apparatus, wherein a gas is supplied to the gap region to make the purity of the inert gas in the region uniform. 2. The exposure apparatus according to claim 1, wherein the first gas supply unit and the second gas supply unit supply the same type of inert gas. 3. The apparatus according to claim 1, wherein the first and second gas supply units each include an adjustment unit for adjusting a gas pressure supplied from a gas supply source. Exposure equipment. 4. The second gas supply means blows an inert gas at a pressure lower than that of the first gas supply means onto a surface of the original and / or the substrate to form a gas reservoir on the surface. The exposure apparatus according to claim 1, wherein the exposure apparatus is formed. 5. The first gas supply means is configured to inactivate the inert gas with respect to both the front side and the back side of the original in a gap region formed by the illumination optical unit and the projection optical unit and the original. The exposure apparatus according to claim 1, wherein a gas is supplied. 6. The inert gas reservoir according to claim 1, wherein the second gas supply means forms a pool of the inert gas in a region before the master and / or wafer enters the gap region. 3. The exposure apparatus according to claim 1. 7. The method according to claim 1, wherein the inert gas contains high-purity nitrogen gas and helium gas.
The exposure apparatus according to any one of claims 1 to 6. 8. The apparatus according to claim 1, wherein the gap region includes an optical path region of light emitted from the illumination optical unit or the projection optical unit to the original or the substrate. 3. The exposure apparatus according to claim 1. 9. A method for manufacturing a semiconductor device, comprising: installing a plurality of semiconductor manufacturing apparatuses including an exposure apparatus in a semiconductor manufacturing factory; and manufacturing a semiconductor device using the plurality of semiconductor manufacturing apparatuses. And the exposure apparatus includes: an illumination optical unit and the original; a gap region formed by the original and the projection optical unit; and / or a gap region formed by the projection optical unit and the substrate.
First gas supply means for supplying an inert gas in a horizontal direction with respect to the surface of the original plate and / or the substrate; and supplying an inert gas to the vicinity of a gas supply section of the first gas supply means. A second gas supply means for forming a gas reservoir, and an inert gas which is formed by the second gas supply means together with the inert gas supplied by the first gas supply means. A method for manufacturing a semiconductor device, wherein a gas is supplied to the gap region to make the purity of an inert gas uniform in the region. 10. A step of connecting the plurality of semiconductor manufacturing apparatuses via a local area network, a step of connecting the local area network to an external network outside the factory, and using the local area network and the external network. 10. The method according to claim 9, further comprising: acquiring information on the exposure apparatus from a database on the external network; and controlling the exposure apparatus based on the acquired information. A method for manufacturing a semiconductor device. 11. A semiconductor manufacturing plant different from the semiconductor manufacturing plant by accessing a database provided by a vendor or a user of the exposure device via the external network to obtain maintenance information of the manufacturing device by data communication. The method of manufacturing a semiconductor device according to claim 9, wherein the production management is performed by performing data communication with the external device via the external network. 12. A semiconductor manufacturing plant capable of performing data communication with respect to information on at least one of the manufacturing device groups, said semiconductor manufacturing plant comprising: a plurality of semiconductor manufacturing devices including an exposure apparatus; and said plurality of semiconductor manufacturing devices. And a gateway connecting the local area network and an external network outside the semiconductor manufacturing plant, wherein the exposure apparatus comprises: an illumination optical unit and the master; the master and the projection optical unit; And / or a gap region formed by the projection optical unit and the substrate,
A first gas supply unit that supplies an inert gas in a horizontal direction with respect to the surface of the original plate and / or the substrate; and an inert gas that is supplied near a gas supply unit of the first gas supply unit. A second gas supply means for forming a gas reservoir, and an inert gas formed by the second gas supply means together with the inert gas supplied by the first gas supply means. A semiconductor manufacturing plant, wherein a gas is supplied to the gap region to make the purity of the inert gas in the region uniform. 13. A method for maintaining an exposure apparatus, comprising: providing an exposure apparatus on an external network outside a factory where the exposure apparatus is installed;
A step of preparing a database for storing information related to the maintenance of the exposure apparatus; a step of connecting the exposure apparatus to a local area network in the factory; and using the external network and the local area network to store the information in the database. Maintaining the exposure apparatus based on the accumulated information, the exposure apparatus comprising: an illumination optical unit and the original; a gap region formed by the original and the projection optical unit; and / or the projection optical unit. And a gap region formed by the substrate,
First gas supply means for supplying an inert gas in a horizontal direction with respect to the surface of the original plate and / or the substrate; and supplying an inert gas to the vicinity of a gas supply section of the first gas supply means. A second gas supply means for forming a gas reservoir, and an inert gas which is formed by the second gas supply means together with the inert gas supplied by the first gas supply means. A maintenance method for an exposure apparatus, wherein a gas is supplied to the gap area to make the purity of the inert gas in the area uniform. 14. An exposure apparatus enabling data communication via a computer network, comprising: a network interface connected to the network for data communication; and a display for displaying a result of the data communication. A computer connected to the network and executing software for communicating data, wherein the exposure apparatus includes: an illumination optical unit and the original; a gap region formed by the original and the projection optical unit; / Or in a gap region formed by the projection optical unit and the substrate,
First gas supply means for supplying an inert gas in a horizontal direction with respect to the surface of the original plate and / or the substrate; and supplying an inert gas to the vicinity of a gas supply section of the first gas supply means. A second gas supply means for forming a gas reservoir, and an inert gas which is formed by the second gas supply means together with the inert gas supplied by the first gas supply means. An exposure apparatus, wherein a gas is supplied to the gap region to make the purity of the inert gas in the region uniform. 15. The network software,
The exposure apparatus is connected to an external network of a factory where the apparatus is installed, provides a user interface on the display for accessing a maintenance database provided by a vendor or a user of the exposure apparatus, and provides the database via the external network. 15. The exposure apparatus according to claim 14, wherein information can be obtained from the apparatus.