JP2002348658A - Evaporation source, thin film forming method and apparatus using the same - Google Patents
Evaporation source, thin film forming method and apparatus using the sameInfo
- Publication number
- JP2002348658A JP2002348658A JP2001154669A JP2001154669A JP2002348658A JP 2002348658 A JP2002348658 A JP 2002348658A JP 2001154669 A JP2001154669 A JP 2001154669A JP 2001154669 A JP2001154669 A JP 2001154669A JP 2002348658 A JP2002348658 A JP 2002348658A
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- Prior art keywords
- container
- vapor deposition
- heater
- heating
- evaporation
- Prior art date
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- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
(57)【要約】
【課題】 本発明は、薄膜形成時のみ蒸着材料を加熱
する構成とし、かつ短時間で蒸発を開始できる蒸着源を
提供することを目的とする。さらに、安定性及び生産性
の高い薄膜形成方法及び装置を提供することを目的とす
る。
【解決手段】 蒸着材料を収納する材料容器と材料容器
内の蒸着材料を加熱する加熱機構からなる蒸着源におい
て、該蒸着材料を加熱する輻射ヒータは、該材料容器の
上方に配置し、該容器内の蒸着材料の表面に放射し、該
輻射ヒータの輻射熱により直接加熱することを特徴とす
る。輻射ヒータの表面をセラミック系材料とするのが好
ましい。また、該蒸着材料を加熱する輻射ヒータと前記
材料容器は、どちらか一方が両者を近接又は離脱可能に
する移動機構を備えており、薄膜形成時は該輻射ヒータ
と該材料容器を近接させ、薄膜形成後は離脱させること
を特徴とする。
(57) [Problem] To provide an evaporation source configured to heat an evaporation material only when a thin film is formed and capable of starting evaporation in a short time. It is another object of the present invention to provide a method and an apparatus for forming a thin film having high stability and high productivity. A radiant heater for heating a deposition material is provided above a material container in a deposition source including a material container for storing the deposition material and a heating mechanism for heating the deposition material in the material container. It is characterized by arranging, radiating to the surface of the vapor deposition material in the container, and directly heating by the radiant heat of the radiant heater. Preferably, the surface of the radiant heater is made of a ceramic material. Further, the radiant heater for heating the deposition material and the material container are provided with a moving mechanism that allows one of them to approach or separate from the other, and when forming a thin film, the radiant heater and the material container are brought close to each other, It is characterized in that it is separated after the formation of the thin film.
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明が属する技術分野】本発明は蒸着源並びにそれを
用いた薄膜形成方法及び形成装置に係り、特に材料の利
用効率が高く、かつ高品質の有機薄膜を生産性良く形成
可能な蒸着源に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an evaporation source and a method and an apparatus for forming a thin film using the same, and more particularly, to an evaporation source capable of forming a high-quality organic thin film with high productivity and high productivity. Things.
【０００２】[0002]
【従来の技術】近年、半導体デバイスや電子素子等に有
機薄膜を利用する検討が盛んに行われている。例えば、
次世代のフラットパネルディスプレイとして注目されて
いる有機ＥＬ素子は、電極以外の電子輸送層、ホール輸
送層、発光層などがすべて有機薄膜によって構成されて
いる。2. Description of the Related Art In recent years, the use of organic thin films for semiconductor devices, electronic elements, and the like has been actively studied. For example,
2. Description of the Related Art In an organic EL element, which is attracting attention as a next-generation flat panel display, an electron transport layer, a hole transport layer, a light emitting layer, and the like other than electrodes are all formed of organic thin films.
【０００３】有機薄膜の形成は、原料がイオンや電子等
の衝撃により分解等し易いため、通常、傍熱型蒸着源を
用いた真空蒸着法が採用される。上記有機ＥＬ素子の多
層構造の有機薄膜を形成する場合、各構成膜の蒸着材料
を収納した複数の蒸着源を真空室内に配置し、各蒸着源
の蒸着材料を所定の温度に加熱しておき、各蒸着源上に
配置されたシャッタを順次開けることにより、各構成膜
の積層膜を基板上に形成する方法が用いられる。あるい
は、各構成膜に対応する蒸着源を配置した真空室を連結
したクラスタ型又はインライン型装置を用い、基板を各
真空室に搬送しながら各真空室でそれぞれの構成膜を堆
積し、多層構造膜を形成する方法が用いられる。In forming an organic thin film, a raw material is easily decomposed by the impact of ions, electrons, or the like. Therefore, a vacuum evaporation method using an indirectly heated evaporation source is usually employed. When an organic thin film having a multilayer structure of the organic EL element is formed, a plurality of evaporation sources accommodating the evaporation materials of the constituent films are arranged in a vacuum chamber, and the evaporation materials of the evaporation sources are heated to a predetermined temperature. A method is used in which a shutter disposed on each deposition source is sequentially opened to form a laminated film of each constituent film on a substrate. Alternatively, using a cluster-type or in-line type device in which vacuum chambers corresponding to the respective constituent films are arranged, and depositing each constituent film in each vacuum chamber while transporting the substrate to each vacuum chamber, a multilayer structure A method for forming a film is used.
【０００４】ここで、傍熱型蒸着源１００は、図５に示
すように、一般に、グラファイト、窒化ボロン又は炭化
珪素などの熱伝導率の高い蒸着材料収納容器１０１と、
その外周に配置されたヒータ１０２と、ヒータからの輻
射熱を反射するリフレクタ１０３とから構成される。容
器温度は熱電対１０４等により測定され、容器温度が一
定になるようにヒータへの供給電力が調整される。即
ち、ヒータ１０２に通電して容器１０１を所定の温度に
加熱すると、容器からの熱伝導により、容器内に収納さ
れた有機材料（蒸着材料）１０５は加熱されて蒸発し、
基板上で凝縮し薄膜が形成される。Here, as shown in FIG. 5, the indirectly heated deposition source 100 generally includes a deposition material container 101 having a high thermal conductivity such as graphite, boron nitride or silicon carbide.
It is composed of a heater 102 disposed on the outer periphery thereof and a reflector 103 for reflecting radiant heat from the heater. The container temperature is measured by a thermocouple 104 or the like, and the power supplied to the heater is adjusted so that the container temperature becomes constant. That is, when the heater 102 is energized to heat the container 101 to a predetermined temperature, the organic material (evaporation material) 105 stored in the container is heated and evaporated by heat conduction from the container,
Condensed on the substrate to form a thin film.
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記従来の傍
熱型蒸着源は、容器１０１をその外周に配置したヒータ
１０２により加熱し、容器内壁からの伝導熱で蒸着材料
１０５を加熱して蒸発させる構成のため、容器の中心側
と周辺側とで蒸着材料に温度差が生じるという問題があ
った。即ち、容器中心部で所定の蒸発量を得ようとする
と、その分、周辺側の温度が高くなってしまい、有機材
料が分解、変質等して所望の特性の薄膜が得られなくな
る場合があった。成膜速度を高めるためには容器内径を
大きくして蒸発量を増加させる必要があるが、この温度
差の問題は容器内径が大きくなるにつれ一層顕著にな
る。また、材料が消費されてくると、材料と容器内壁と
の接触面積か減少し蒸発量が減少することになる。これ
を補うために容器の温度をさらに上げる必要があるが、
これが有機材料の分解、変質を一層促進させてしまう要
因となる。However, the above-mentioned conventional indirectly heated evaporation source heats the container 101 by a heater 102 disposed on the outer periphery thereof, and heats the evaporation material 105 by conduction heat from the inner wall of the container. Due to such a configuration, there is a problem that a temperature difference occurs in the vapor deposition material between the center side and the peripheral side of the container. That is, if an attempt is made to obtain a predetermined amount of evaporation at the center of the container, the temperature on the peripheral side will increase accordingly, and the organic material may be decomposed, deteriorated, etc., and a thin film having desired characteristics may not be obtained. Was. In order to increase the deposition rate, it is necessary to increase the inner diameter of the container to increase the amount of evaporation. However, the problem of the temperature difference becomes more remarkable as the inner diameter of the container increases. When the material is consumed, the contact area between the material and the inner wall of the container is reduced, and the amount of evaporation is reduced. To compensate for this, it is necessary to further raise the temperature of the container,
This is a factor that further promotes decomposition and alteration of the organic material.
【０００６】さらに、上記従来の蒸着源１００には、材
料容器１０１が所定の温度で安定するまでに時間がかか
るという問題がある。特に、多数枚の基板に連続して膜
形成を行う場合には、多量の材料を収納する必要上、よ
り大きな容器を用いる必要があるが、熱容量が大きくな
るため蒸着を開始できる時間までに長時間を要してしま
うことになる。従って、薄膜形成時にのみ蒸発温度まで
容器温度を上げ、それ以外は温度を下げることにより、
蒸発の開始、停止の切替を行うことは、生産装置として
は実際上不可能である。この結果、蒸着源を所定の温度
に保ちながらシャッタの開閉により膜堆積の開始、停止
を制御せざるを得ず、例えば基板搬送時も蒸発し続ける
ため、材料の利用率が低下し、高価な材料が無駄に消費
されるという問題があった。Further, the conventional evaporation source 100 has a problem that it takes time for the material container 101 to stabilize at a predetermined temperature. In particular, when forming a film on a large number of substrates continuously, a large container needs to be used because a large amount of material needs to be stored.However, since the heat capacity becomes large, it takes a long time to start vapor deposition. This will take time. Therefore, by increasing the container temperature to the evaporation temperature only at the time of thin film formation and lowering the temperature otherwise,
It is practically impossible for a production apparatus to switch between starting and stopping of evaporation. As a result, the start and stop of film deposition must be controlled by opening and closing the shutter while maintaining the vapor deposition source at a predetermined temperature. For example, evaporation continues even when the substrate is conveyed. There was a problem that materials were wasted.
【０００７】かかる状況に鑑み、本発明は、薄膜形成時
のみ蒸着材料を加熱する構成とし、かつ短時間で蒸発を
開始可能な蒸着源を提供することを目的とする。即ち、
材料の利用率が高く、しかも生産性に優れる蒸着源を提
供することを目的とする。さらに、本発明は、かかる蒸
着源を用いることにより、蒸着材料の蒸発面を均一な温
度に加熱し、材料の分解、変質を抑え、安定した成膜を
連続して行うことが可能な生産性の高い薄膜形成方法及
び薄膜形成装置を提供することを目的とする。In view of such circumstances, an object of the present invention is to provide a vapor deposition source that is configured to heat a vapor deposition material only when a thin film is formed and that can start vaporization in a short time. That is,
It is an object of the present invention to provide a vapor deposition source which has a high material utilization rate and is excellent in productivity. Further, the present invention uses the above-mentioned evaporation source to heat the evaporation surface of the evaporation material to a uniform temperature, suppress the decomposition and deterioration of the material, and achieve a productivity capable of continuously performing stable film formation. It is an object of the present invention to provide a thin film forming method and a thin film forming apparatus with high reliability.
【０００８】[0008]
【課題を解決する手段】本発明の蒸着源は、蒸着材料を
収納する材料容器と材料容器内の蒸着材料を加熱する加
熱機構からなる蒸着源において、該蒸着材料を加熱する
輻射ヒータは、該材料容器の上方に配置し、該容器内の
蒸着材料の表面に放射し、該輻射ヒータの輻射熱により
直接加熱することを特徴とする。また、蒸着材料を収納
する材料容器と材料容器内の蒸着材料を加熱する加熱機
構からなる蒸着源において、該蒸着材料を加熱する輻射
ヒータは、該材料容器の上方に配置し、セラミック系材
料を加熱することにより発する輻射熱を利用し、かつ、
該容器内の蒸着材料の表面に放射し、該輻射熱により直
接加熱することを特徴とする。前記輻射ヒータの材質が
アルミナ系セラミック材料であるのが好ましい。さらに
また、蒸着材料を収納する材料容器と材料容器内の蒸着
材料を加熱する加熱機構からなる蒸着源において、該蒸
着材料を加熱する輻射ヒータと前記材料容器は、どちら
か一方が両者を近接又は離脱可能にする移動機構を備え
ており、薄膜形成時は該輻射ヒータと該材料容器を近接
させ、薄膜形成後は離脱させることを特徴とする。According to the present invention, there is provided a vapor deposition source comprising a material container for accommodating a vapor deposition material and a heating mechanism for heating the vapor deposition material in the material container. It is arranged above a material container, radiates to the surface of the vapor deposition material in the container, and is directly heated by radiant heat of the radiant heater. Further, in a vapor deposition source comprising a material container for storing the vapor deposition material and a heating mechanism for heating the vapor deposition material in the material container, a radiant heater for heating the vapor deposition material is disposed above the material container, and a ceramic material is disposed. Utilizes radiant heat generated by heating, and
The method is characterized in that the material is radiated to the surface of the vapor deposition material in the container and is directly heated by the radiant heat. It is preferable that the material of the radiation heater is an alumina ceramic material. Furthermore, in a vapor deposition source comprising a material container for storing the vapor deposition material and a heating mechanism for heating the vapor deposition material in the material container, one of the radiation heater and the material container for heating the vapor deposition material is close to or close to both. It is provided with a moving mechanism capable of detachment, wherein the radiant heater and the material container are brought close to each other when a thin film is formed, and detached after the thin film is formed.
【０００９】このように、蒸着材料をその上部から輻射
熱により直接加熱し蒸発させる構成としたため、容器側
面から容器を介して間接的に蒸着材料を加熱する従来の
蒸着源とは異なり、蒸着材料を蒸発温度まで短時間で昇
温させることが可能となる。また、蒸着材料の最高温度
がその蒸発面となるため、蒸発面内での温度分布が均一
化されるとともに、過度の加熱による材料の分解、変
質、突沸等の問題を回避することができ、均質で膜厚均
一性に優れた薄膜形成が可能となる。さらに、従来の蒸
着源とは異なり、容器内壁部と中心部とでの蒸着材料の
温度差を低減できるため、大口径の容器を用いることが
可能となる。さらにまた、基板搬送時等の薄膜形成時以
外は、材料が蒸発することはなく、薄膜形成時のみ短時
間で蒸着材料を加熱し蒸発させることができるため、高
価な材料の利用率は大幅に改善される。As described above, since the evaporation material is directly heated from the upper portion by radiant heat and evaporated, unlike the conventional evaporation source in which the evaporation material is indirectly heated from the side of the container via the container, the evaporation material is used. It is possible to raise the temperature to the evaporation temperature in a short time. In addition, since the maximum temperature of the evaporation material is the evaporation surface, the temperature distribution in the evaporation surface is uniform, and the material can be prevented from being decomposed, deteriorated, and bumped due to excessive heating. It is possible to form a uniform thin film having excellent film thickness uniformity. Further, unlike a conventional evaporation source, the temperature difference between the evaporation material at the inner wall portion and the central portion of the container can be reduced, so that a container having a large diameter can be used. Furthermore, the material does not evaporate except during thin film formation such as when transferring a substrate, and the evaporation material can be heated and evaporated in a short time only during thin film formation. Be improved.
【００１０】蒸着材料の蒸発の開始、停止は、例えば、
ヒータに通電する電力量により変化させることにより行
われる。また、これ以外に、例えば、前記ヒータ又は前
記容器を移動させる機構とを備え、薄膜形成時に、前記
ヒータ又は容器をヒータが蒸着材料の直上に来るように
移動させることにより、輻射熱を蒸着材料に入射させる
ようにしても良い。また、前記ヒータと前記容器との間
にシャッタを備え、薄膜形成時に、前記シャッタを退避
させ、前記ヒータの輻射熱を蒸着材料を入射させる構成
としても良い。さらに、これらを組み合わせることによ
り、蒸着材料の蒸発開始及び停止を制御することもでき
る。[0010] The start and stop of the evaporation of the evaporation material are, for example, as follows.
This is performed by changing the amount of power supplied to the heater. In addition to the above, for example, a mechanism for moving the heater or the container is provided, and at the time of forming a thin film, the heater or the container is moved so that the heater comes directly above the vapor deposition material, so that radiant heat is applied to the vapor deposition material. The light may be incident. Further, a shutter may be provided between the heater and the container, the shutter may be retracted when a thin film is formed, and the radiant heat of the heater may be applied to a deposition material. Further, by combining these, the start and stop of the evaporation of the evaporation material can be controlled.
【００１１】ここで、ヒータとしては、面状ヒータが好
適に用いられ、蒸発材料の蒸発面はより均一な温度に加
熱され、蒸発面内の蒸発均一性は向上して基板上の膜厚
均一性が向上するとともに、部分的な過度の温度上昇に
伴う材料の分解や突沸等の問題はなくなり、より広範囲
な材料に適用することができる。さらに、前記ヒータの
少なくとも前記蒸着材料に対向する表面を、蒸着材料が
高い吸収率を有する赤外線領域の光に対し、高い放射率
を有する材料で構成するのが好ましい。これにより、蒸
着材料の加熱、蒸発効率は一層向上する。このような材
料としては、例えばセラミックが好適に用いられ、アル
ミナ系のセラミックがより好ましい。Here, as the heater, a planar heater is preferably used, the evaporation surface of the evaporation material is heated to a more uniform temperature, the evaporation uniformity in the evaporation surface is improved, and the film thickness on the substrate is uniform. As a result, the problems such as decomposition and bumping of the material due to a partial excessive rise in temperature are eliminated, and the invention can be applied to a wider range of materials. Further, it is preferable that at least a surface of the heater facing the vapor deposition material is made of a material having a high emissivity to light in an infrared region where the vapor deposition material has a high absorption rate. Thus, the efficiency of heating and evaporating the deposition material is further improved. As such a material, for example, ceramic is preferably used, and alumina-based ceramic is more preferable.
【００１２】また、前記ヒータは同軸に配置された２つ
のリング状のヒータで構成するのが好ましく、例えば中
心側ヒータの通電量を小さくすることにより、蒸着材料
の蒸発面での温度均一性は一層向上する。また、前記２
つのリング状のヒータのうち、中心側のリング状ヒータ
を外側のリング状ヒータより上方に配置することによっ
ても、同様の効果を得ることができる。さらに、複数の
蒸発口を形成した蓋を有し、底面に前記蒸着材料に輻射
熱を入射させるための開口を形成したケース内に、前記
ヒータを配置したことを特徴とする。ヒータの上面に蓋
を配置することにより、基板に対する輻射熱の影響を低
減することができる。The heater is preferably constituted by two ring-shaped heaters arranged coaxially. For example, by reducing the amount of electricity supplied to the central heater, the temperature uniformity of the evaporation material on the evaporation surface can be improved. Further improve. The above 2
The same effect can be obtained by arranging the center-side ring-shaped heater above the outer ring-shaped heater among the two ring-shaped heaters. Further, the heater is disposed in a case having a lid having a plurality of evaporating ports formed therein and having an opening formed on the bottom surface for allowing radiant heat to enter the vapor deposition material. By disposing the lid on the upper surface of the heater, the influence of radiant heat on the substrate can be reduced.
【００１３】前記容器の少なくとも前記ヒータ側の表面
を輻射熱を反射する金属面とするのが好ましい。輻射熱
を反射し、蒸着材料の加熱効率が向上するとともに、容
器自体の温度上昇を抑えられ、蒸発の開始、停止等の成
膜制御性が一層向上する。なお、前記容器に加熱機構及
び／又は冷却機構を設けてもよく、容器温度をより精度
良く温度制御することにより、薄膜形成の生産性及び安
定性が一層向上する。即ち、蒸着材料収納部の下部に加
熱機構を設け、容器を予め蒸着材料が蒸発する温度の近
くまで加熱しておくことにより、ヒータの熱輻射による
蒸着材料の加熱、蒸発をより一層短時間で行うことが可
能となる。また、多数の基板に成膜を繰り返し行うと容
器温度は徐々に上昇するが、冷却機構を設けることによ
り容器温度を一定に保つことができ、より精密な成膜制
御を行うことができる。なお、冷却機構としては、容器
にガス、液体等の冷媒を流す通路を設け、容器温度をモ
ニタしながら、上記の加熱機構と冷媒の流量を調節して
行えばよい。It is preferable that at least the surface on the heater side of the container is a metal surface that reflects radiant heat. By reflecting the radiant heat, the heating efficiency of the vapor deposition material is improved, the temperature rise of the container itself is suppressed, and the controllability of film formation such as start and stop of evaporation is further improved. The container may be provided with a heating mechanism and / or a cooling mechanism, and by controlling the temperature of the container more accurately, productivity and stability of thin film formation are further improved. That is, a heating mechanism is provided at the lower portion of the vapor deposition material storage section, and the container is heated to a temperature close to a temperature at which the vapor deposition material evaporates in advance, so that heating and vaporization of the vapor deposition material by heat radiation of the heater can be performed in a shorter time. It is possible to do. Further, when film formation is repeatedly performed on a large number of substrates, the container temperature gradually rises. However, by providing a cooling mechanism, the container temperature can be kept constant, and more precise film formation control can be performed. As the cooling mechanism, a passage for flowing a refrigerant such as gas or liquid may be provided in the container, and the above-mentioned heating mechanism and the flow rate of the refrigerant may be adjusted while monitoring the temperature of the container.
【００１４】本発明の薄膜形成方法は、真空室内で、蒸
着材料を収納する容器と容器内の該蒸着材料を加熱して
蒸気とし、該蒸気を凝縮して基板上に堆積させて薄膜を
形成する方法において、該蒸着材料を加熱する輻射ヒー
タは、該容器の上方に配置し、かつ、該容器内の蒸着材
料の表面を放射し、該輻射ヒータの輻射熱により直接加
熱することにより発生した蒸気を輻射ヒータ上方に配置
された基板上に薄膜を形成することを特徴とする。ま
た、前記輻射ヒータと前記材料容器は、どちらか一方が
両者を近接、又は離脱可能にする移動機構を備えてお
り、薄膜形成時は該輻射ヒータと該材料容器を近接さ
せ、薄膜形成後は離脱させることを特徴とする。本発明
の薄膜形成装置は、真空室内に前記蒸着源を配置し、該
蒸着源の材料容器内に収納される蒸着材料を加熱蒸発さ
せ、該蒸着源の上方に配置された基板上に薄膜を形成す
る装置において、上記本発明の蒸着源を少なくとも1つ
以上を配置したことを特徴とする。上述したように、本
発明の蒸着源を用いることにより、多数の基板につい
て、膜厚及び膜質均一性の高い薄膜を高い生産性で連続
形成することが可能となる。According to the thin film forming method of the present invention, in a vacuum chamber, a container for accommodating a vapor deposition material and the vapor deposition material in the container are heated to form a vapor, and the vapor is condensed and deposited on a substrate to form a thin film. In the method, a radiant heater for heating the vapor deposition material is disposed above the container, and radiates a surface of the vapor deposition material in the container, and steam generated by directly heating by radiant heat of the radiant heater. Is characterized in that a thin film is formed on a substrate disposed above the radiation heater. Further, the radiant heater and the material container are provided with a moving mechanism that allows one of them to approach or separate from the other.When forming a thin film, the radiant heater and the material container are brought close to each other. It is characterized by being detached. The thin film forming apparatus of the present invention arranges the evaporation source in a vacuum chamber, heats and evaporates an evaporation material stored in a material container of the evaporation source, and forms a thin film on a substrate arranged above the evaporation source. In the apparatus for forming, at least one or more of the above-mentioned vapor deposition sources of the present invention are arranged. As described above, by using the evaporation source of the present invention, a thin film having high uniformity in film thickness and film quality can be continuously formed with high productivity on many substrates.
【００１５】なお、本発明において多層構造膜を形成す
る場合、真空容器内に複数の蒸着源を配置し、各蒸着源
を順次制御して積層膜を形成しても良いし、内部に上記
蒸着源を配置した複数の真空容器内に基板を搬送しなが
ら順次薄膜を形成してもよい。このようにして、高品質
の積層膜を高い生産性で形成することができる。In the case of forming a multilayer structure film in the present invention, a plurality of evaporation sources may be arranged in a vacuum vessel, and each of the evaporation sources may be sequentially controlled to form a laminated film. The thin film may be sequentially formed while transporting the substrate into a plurality of vacuum vessels in which sources are arranged. Thus, a high-quality laminated film can be formed with high productivity.
【００１６】[0016]
【発明の実施の形態】以下に本発明の実施の形態を図面
を参照して説明する。 （第１の実施形態）本発明の第１の実施形態を図１に示
す。図１は、本発明の蒸着源及びそれを用いた真空蒸着
装置の一例を示す模式的図である。図１（ａ）の断面図
に示すように、排気口２及び基板搬送口３を有する真空
室１内の上部に、基板５を保持する基板ホルダ４が配置
され、その下方に蒸着源６が配置される。蒸着源６は、
蒸着材料１１を収納する材料容器１０と、開口を有する
面状のヒータ７とを備え、ヒータは移動機構（不図示）
を備えたヒータケース８に収納、固定されている。本実
施形態のヒータ７は、図１（ｂ）の平面図に示したよう
に、同軸に配置された２つのリング状のアルミナ製セラ
ミックヒータ７ａ、７ｂからなり、それぞれ電流導入線
（不図示）を介して真空室外部に配置された電源に接続
されている。ヒータケース８の底面には、ヒータの輻射
熱が下方に放射されるよう開口８ａが形成され、また、
上面には蒸発口９ａを有する蓋９が取り付けられてい
る。Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 1 shows a first embodiment of the present invention. FIG. 1 is a schematic diagram showing an example of the evaporation source of the present invention and a vacuum evaporation apparatus using the same. As shown in the cross-sectional view of FIG. 1A, a substrate holder 4 for holding a substrate 5 is disposed above a vacuum chamber 1 having an exhaust port 2 and a substrate transfer port 3, and an evaporation source 6 is provided below the substrate holder 4. Be placed. The evaporation source 6
The apparatus includes a material container 10 for storing a vapor deposition material 11 and a planar heater 7 having an opening. The heater is a moving mechanism (not shown).
Are housed and fixed in a heater case 8 having As shown in the plan view of FIG. 1B, the heater 7 of the present embodiment is composed of two ring-shaped alumina ceramic heaters 7a and 7b coaxially arranged, each of which has a current introduction line (not shown). Is connected to a power source arranged outside the vacuum chamber. An opening 8a is formed in the bottom surface of the heater case 8 so that the radiant heat of the heater is radiated downward.
A lid 9 having an evaporating port 9a is attached to the upper surface.
【００１７】図１の真空蒸着装置を用いた薄膜形成方法
を以下に説明する。ヒータケース８は、薄膜形成時以外
は図の左端位置に置かれ、薄膜形成時のみ右側に移動し
て材料容器１０上に載置される。即ち、薄膜形成時の
み、輻射ヒータ７と有機材料１１を向かい合わせる構成
とする。まず、２つのリング状ヒータ７ａ、７ｂにそれ
ぞれ所定の電力を供給して、予め所定の温度に加熱して
おく。各ヒータへの供給電力は、蒸着材料表面全面が輻
射熱により均一な温度に加熱され全面から均一に蒸発す
るように値を設定する。基板搬送口３を通して不図示の
基板搬送機構により基板５を搬入し、基板ホルダ４に保
持させる。続いて、ヒータケース８の駆動機構によりヒ
ータケース８を右方向に移動させ、材料容器１０上面の
外周部とケース底部を密着させて載置する。２つのリン
グ状ヒータ７ａ、７ｂの輻射熱がケース底面の開口８ａ
を通して蒸着材料１１表面に入射し、蒸着材料は輻射熱
により短時間で蒸発温度まで加熱されて蒸発を開始す
る。蒸気は２つリング状ヒータの間隙１２及び中心側リ
ング状ヒータの開口１３、さらにケース蓋９の蒸発口９
ａを通して上昇し、基板上で凝縮して薄膜が形成され
る。A method for forming a thin film using the vacuum evaporation apparatus shown in FIG. 1 will be described below. The heater case 8 is placed at the left end position in the drawing except when a thin film is formed, and moves to the right only when forming a thin film and is placed on the material container 10. That is, the radiation heater 7 and the organic material 11 are configured to face each other only when the thin film is formed. First, a predetermined power is supplied to each of the two ring-shaped heaters 7a and 7b to heat them in advance to a predetermined temperature. The power supplied to each heater is set to a value such that the entire surface of the deposition material is heated to a uniform temperature by radiant heat and uniformly evaporated from the entire surface. The substrate 5 is carried in by the substrate transport mechanism (not shown) through the substrate transport port 3 and is held by the substrate holder 4. Subsequently, the heater case 8 is moved rightward by the driving mechanism of the heater case 8, and the heater case 8 is placed so that the outer periphery of the upper surface of the material container 10 and the case bottom are brought into close contact with each other. Radiation heat of the two ring-shaped heaters 7a and 7b is applied to the opening 8a on the bottom of the case.
Through the surface of the evaporation material 11, and the evaporation material is heated to the evaporation temperature in a short time by radiant heat and starts evaporation. The steam is supplied to the gap 12 between the two ring-shaped heaters, the opening 13 of the center-side ring-shaped heater, and the evaporation port 9 of the case lid 9.
a and condenses on the substrate to form a thin film.
【００１８】所望の膜厚の薄膜が形成された後、ヒータ
ケース８を再び左方向に移動させ、蒸着材料へのヒータ
の輻射熱を遮断し、蒸発を停止する。次いで、基板５を
基板搬送機構により基板ホルダから取り外し搬出すると
ともに、未処理の基板を搬入して基板ホルダに取り付け
る。再び、ヒータケース８を移動させ材料容器１０上に
載置して薄膜形成を行う。以上の操作を繰り返し行うこ
とにより、多数の基板上に連続して薄膜形成することが
可能となる。After a thin film having a desired thickness is formed, the heater case 8 is moved to the left again to shut off radiant heat of the heater to the deposition material and stop evaporation. Next, the substrate 5 is removed from the substrate holder by the substrate transport mechanism and carried out, and an unprocessed substrate is carried in and attached to the substrate holder. Again, the heater case 8 is moved and placed on the material container 10 to form a thin film. By repeating the above operation, a thin film can be continuously formed on many substrates.
【００１９】以上述べたように、基板搬送時には、蒸着
材料の蒸発は実質上起こらないため、従来の蒸着源のよ
うに常に蒸発し続けるものとは異なり、蒸着材料の無駄
な消費又は変質を回避することができる。また、従来の
ように容器を介して蒸着材料を間接的に加熱するもので
はなく、ヒータからの輻射熱により直接蒸着材料を加熱
するため、蒸着材料表面を短時間で蒸発温度まで加熱す
ることができるため生産性が大幅に向上する。さらに、
面状ヒータを用いることにより、蒸発面積が大きくなっ
ても全面を均一に加熱することができる。この結果、生
産性が向上するのみならず、より大型の基板に膜厚均一
性の高い薄膜形成を行うことが可能となる。As described above, the evaporation material does not substantially evaporate during the transfer of the substrate, so that unlike the conventional evaporation source, which is constantly evaporating, unnecessary consumption or deterioration of the evaporation material is avoided. can do. In addition, instead of indirectly heating the deposition material through a container as in the related art, since the deposition material is directly heated by radiant heat from the heater, the deposition material surface can be heated to the evaporation temperature in a short time. Therefore, productivity is greatly improved. further,
By using the planar heater, the entire surface can be uniformly heated even if the evaporation area becomes large. As a result, not only the productivity is improved, but also a thin film with high film thickness uniformity can be formed on a larger substrate.
【００２０】さらにまた、蒸着材料は輻射ヒータからの
輻射熱（赤外光）に対する光学的な吸収特性を利用して
表面から加熱されるので、最高温度が蒸着材料表面とな
る。この結果、材料の分解、変質、及び突沸等が起こり
難くなり、より一層高品質で均質な薄膜を形成すること
ができる。このような観点から、本発明の蒸着源は、特
に熱的に分解、変質等しやすい有機材料の薄膜形成に好
適に用いることができる。なお、２つのリング状ヒータ
に供給する電力で直接輻射ヒーターの表面温度を制御
し、輻射量を調整することによって安定な成膜レートを
得ることも可能である。この場合、輻射ヒータの表面温
度はその近傍に設置された熱電対によって監視される。Furthermore, since the vapor deposition material is heated from the surface by utilizing the optical absorption characteristics of radiation heat (infrared light) from the radiation heater, the highest temperature is the vapor deposition material surface. As a result, decomposition, alteration, bumping, and the like of the material are less likely to occur, and a higher quality and uniform thin film can be formed. From such a viewpoint, the evaporation source of the present invention can be suitably used particularly for forming a thin film of an organic material which is easily thermally decomposed and deteriorated. It is also possible to obtain a stable film forming rate by directly controlling the surface temperature of the radiant heater with the power supplied to the two ring-shaped heaters and adjusting the amount of radiation. In this case, the surface temperature of the radiant heater is monitored by a thermocouple installed near the radiant heater.
【００２１】本実施形態においては、蒸着材料表面全面
を均一に加熱する方策として、２つのリング状ヒータに
供給する電力を調節する構成としたが、例えば、図２に
示すように、中央側のリング状ヒータ７ａを外側のリン
グ状ヒータ７ｂよりも蒸着材料から離して配置する等、
位置関係を適正化して材料表面に入射する輻射熱の分布
を均一にしてもよい。In this embodiment, as a measure for uniformly heating the entire surface of the evaporation material, the power supplied to the two ring-shaped heaters is adjusted. For example, as shown in FIG. For example, the ring-shaped heater 7a is arranged more distant from the deposition material than the outer ring-shaped heater 7b.
The distribution of radiant heat incident on the material surface may be made uniform by optimizing the positional relationship.
【００２２】本発明において、ヒータは、例えば絶縁基
板上に所定のパターンの抵抗体を形成し、絶縁体で被覆
した面状のヒータが好適に用いられ、図１及び図２に示
したように、２又はそれ以上のヒータを所定の間隙を開
けて配置した形態であっても、一枚の面状ヒータに開口
を形成したものであっても良い。また、ヒータの蒸着材
料側の表面は、蒸着材料の加熱に効果的な輻射能を有す
るセラミック等の材料とするのが好ましい。例えば、蒸
着材料が有機ＥＬ素子に用いられるＡｌｑ３、ＮＰＢ等
の有機材料である場合、Ａｌｑ３（トリス（８−ヒドロ
キシキノリノラト）アルミニウム）、ＮＰＢ（N,N'−ジ
（ナフタレン−１−イル）−N,N'−ビフェニルベンチジ
ン）等は、２００℃において、６μｍ以上の赤外波長領
域の吸収率が７０％以上となるのに対し、２．５μｍ以
下の赤外及び可視光領域はほとんど吸収は観測されな
い。そのため、これら有機材料を効率よく加熱するには
その吸収率の高い波長範囲において充分な輻射能を有す
るヒータを使用するのが好ましい。即ち、ヒータの表面
材料としてこの領域で放射率の高い材料を用い、さらに
輻射能の大部分が６μｍ以上の赤外線領域にあるように
ヒータ温度を制御する。具体的には、例えばアルミナ製
のセラミックヒータを用い、アルミナの表面温度を４０
０〜５００℃の範囲とする。これにより、輻射熱が有機
材料によって効率良く吸収され、その結果、材料の加熱
効率が向上し蒸発開始までの時間を短縮することができ
る。In the present invention, as the heater, for example, a planar heater formed by forming a resistor in a predetermined pattern on an insulating substrate and covering with an insulator is preferably used. As shown in FIGS. 1 and 2, A configuration in which two or more heaters are arranged with a predetermined gap therebetween, or a configuration in which an opening is formed in one sheet heater may be used. Further, it is preferable that the surface of the heater on the vapor deposition material side be made of a material such as ceramic having a radiation ability effective for heating the vapor deposition material. For example, when the deposition material is an organic material such as Alq 3 or NPB used for an organic EL element, Alq 3 (tris (8-hydroxyquinolinolato) aluminum), NPB (N, N′-di (naphthalene-1) -Yl) -N, N'-biphenylbenzidine) and the like have an absorptance of 70% or more in the infrared wavelength region of 6 μm or more at 200 ° C., whereas infrared and visible light of 2.5 μm or less. In the region, almost no absorption is observed. Therefore, in order to efficiently heat these organic materials, it is preferable to use a heater having a sufficient radiation ability in a wavelength range where the absorption rate is high. That is, a material having a high emissivity in this region is used as the surface material of the heater, and the heater temperature is controlled so that most of the radiation power is in the infrared region of 6 μm or more. Specifically, for example, a ceramic heater made of alumina is used, and the surface temperature of alumina is set to 40.
The range is 0 to 500 ° C. Thereby, the radiant heat is efficiently absorbed by the organic material, and as a result, the heating efficiency of the material is improved, and the time until the start of evaporation can be shortened.
【００２３】ヒータを収納するヒータケースの材質は特
に制限はなく、例えばステンレス製のものが用いられ
る。また、特に、真空室内に複数の蒸着源が配置され、
輻射熱の基板への影響が大きくなる場合には、輻射熱を
遮断する蓋が取り付けられる。この蓋の構造としては、
輻射熱の遮断効果を高めるため、例えば２重の真空断熱
構造とするのが好ましい。The material of the heater case for housing the heater is not particularly limited, and for example, a stainless steel material is used. Also, in particular, a plurality of evaporation sources are arranged in a vacuum chamber,
When the influence of the radiant heat on the substrate increases, a lid for blocking the radiant heat is attached. As the structure of this lid,
In order to enhance the effect of blocking radiant heat, for example, a double vacuum insulation structure is preferably used.
【００２４】また、材料容器の材質としては、蒸着材料
と反応しないものであればどのような材質であっても良
いが、ヒータの輻射熱の吸収率の低い材料とするのが好
ましく、例えば、アルミニウム、銅の金属を用い、表面
を鏡面仕上げとするのが好ましい。また、例えば石英製
等の容器表面をこれらの膜で被覆しても良い。これによ
り、ヒータからの輻射熱による容器温度の変化は抑えら
れ、より高精度な蒸発の制御が可能となる。As the material of the material container, any material may be used as long as it does not react with the deposition material. However, it is preferable to use a material having a low absorption rate of radiant heat of the heater. It is preferable to use a copper metal and mirror-finish the surface. Further, the surface of a container made of, for example, quartz may be covered with these films. This suppresses a change in the container temperature due to radiant heat from the heater, and enables more accurate evaporation control.
【００２５】本実施形態では、上述したように、蒸着材
料は輻射ヒータの輻射熱（赤外光）に対する光学的な吸
収特性を利用して表面が加熱されるため、加熱開始から
蒸発開始までの時間を従来に比べて大幅に短縮できる
が、更に短縮化するために、材料容器にヒータ等の加熱
機構を内蔵させ、蒸発が実質的に開始する温度近くまで
容器を加熱しておいてもよい。例えば、Ａｌｑ３の場
合、２００℃まで加熱しておくことにより、ヒータの輻
射熱のよる蒸着材料の蒸発開始までの時間を更に短縮化
することができる。In the present embodiment, as described above, since the surface of the vapor deposition material is heated using the optical absorption characteristic of the radiation heater with respect to radiant heat (infrared light), the time from the start of heating to the start of evaporation is reduced. However, in order to further shorten the temperature, a heating mechanism such as a heater may be built in the material container, and the container may be heated to a temperature close to the temperature at which evaporation substantially starts. For example, in the case of Alq 3 , by heating to 200 ° C., the time until the evaporation material starts to be vaporized by the radiant heat of the heater can be further reduced.
【００２６】さらに、本実施形態では、蒸発の開始及び
停止の制御をヒータの移動により行う構成としたが、逆
に、ヒータを固定し、材料容器を移動させる構成として
も良いことは言うまでもない。Further, in the present embodiment, the start and stop of the evaporation are controlled by moving the heater. However, it goes without saying that the heater may be fixed and the material container may be moved.
【００２７】（第２の実施形態）以上述べてきたような
薄膜形成を繰り返し行うと、あるいは長時間の薄膜形成
行うと、輻射ヒータからの輻射熱により材料容器自体が
加熱されて徐々に温度が上昇し、その結果成膜制御が困
難になる場合がある。また、複数の蒸着源を真空室内に
配置する場合には、近接するヒータや容器からの輻射熱
により容器が加熱されてしまい、薄膜形成時に精度よく
成膜制御を行うことができなくなる場合がある。このよ
うな場合であっても、信頼性の高い成膜制御を可能とす
る蒸着源を図３に示す。図３に示すように、ヒータケー
ス８の下方に蒸着材料を収納した容器１０が上下移動可
能な支柱１４で支持されている。容器１０の内部には、
容器加熱用のヒータと、冷媒通路（不図示）とが形成さ
れており、支柱１４内部には外部の電源と接続するヒー
タへの電流導入配線及び外部から冷媒通路に冷却用空気
等を供給排出するための配管が組み込まれている。な
お、１５は真空室内部を外部と遮断しながら支柱１４を
上下させるためのベローズである。さらに、他のヒータ
や容器からの輻射熱を遮断するために、容器１０を囲む
ように断熱シールド１６が設けられる。(Second Embodiment) When the above-described thin film formation is repeatedly performed, or when a long-time thin film formation is performed, the material container itself is heated by radiant heat from the radiant heater, and the temperature gradually increases. However, as a result, film formation control may be difficult. When a plurality of evaporation sources are arranged in a vacuum chamber, the container may be heated by radiant heat from an adjacent heater or container, and it may not be possible to perform film formation control with high accuracy when forming a thin film. FIG. 3 shows an evaporation source that enables highly reliable film formation control even in such a case. As shown in FIG. 3, a container 10 containing a deposition material is supported by a vertically movable column 14 below the heater case 8. Inside the container 10,
A heater for heating the container and a refrigerant passage (not shown) are formed, and inside the column 14, a current introduction wiring to a heater connected to an external power source and a supply / discharge of cooling air or the like from the outside to the refrigerant passage. There is a built-in piping. Reference numeral 15 denotes a bellows for raising and lowering the column 14 while blocking the inside of the vacuum chamber from the outside. Further, a heat insulating shield 16 is provided so as to surround the container 10 in order to block radiant heat from other heaters and the container.
【００２８】図３の蒸着源において、ヒータ７が定常温
度まで昇温する過程や基板搬送、マスク交換など成膜行
わない期間においては、容器１０が断熱シールド１６の
中に下降し、ケース８と容器との距離を離し、輻射熱が
入射しないようにする。薄膜形成を行う場合には、ヒー
タケース８を容器１０上に移動させるとともに、容器１
０を上昇させ、容器の上面とケースの底面を密着させ
る。容器中の有機材料１１がヒータ７の輻射熱によって
直接加熱され、短時間で蒸発温度まで昇温し、素早く蒸
発する。蒸気はケースの上面に設けた複数の蒸発口を通
して基板に到達し、凝縮して薄膜が形成される。ここ
で、中心側ヒータ７ａの輻射強度を外側ヒータ７ｂの例
えば４０〜５０％となるように、電力を調整して供給す
る。これにより蒸着材料の表面に対する輻射能分布を均
一にすることができる。なお、この電力の調整は、容器
中の有機材料の充填量により容器面内の蒸発均一性が変
化する場合にも適用できる。即ち、成膜を繰り返し行っ
て蒸着材料が消費された場合に蒸発均一性が低下する場
合は、２つのヒータの輻射強度を調整することで、面内
での蒸発をより均一化することができる。In the vapor deposition source shown in FIG. 3, during the process of raising the temperature of the heater 7 to a steady temperature or during a period in which film formation is not performed, such as substrate transfer and mask replacement, the container 10 is lowered into the heat insulating shield 16 and Keep away from the container so that radiant heat does not enter. When forming a thin film, the heater case 8 is moved onto the container 10 and the container 1
0 is raised, and the top surface of the container and the bottom surface of the case are brought into close contact with each other. The organic material 11 in the container is directly heated by the radiant heat of the heater 7, and is heated up to the evaporation temperature in a short time and evaporates quickly. The vapor reaches the substrate through a plurality of evaporation ports provided on the upper surface of the case, and is condensed to form a thin film. Here, the power is adjusted and supplied so that the radiation intensity of the center heater 7a is, for example, 40 to 50% of that of the outer heater 7b. Thereby, the radiant power distribution on the surface of the deposition material can be made uniform. Note that the adjustment of the electric power can also be applied to a case where the evaporation uniformity in the surface of the container changes depending on the filling amount of the organic material in the container. That is, when the evaporation uniformity is reduced when the deposition material is consumed by repeating the film formation, the in-plane evaporation can be made more uniform by adjusting the radiation intensity of the two heaters. .
【００２９】真空室内に設けられた膜厚センサ（不図
示）により蒸発量をモニタし、その信号をヒータ電源に
フィードバックし、ヒータの輻射能の調整を行い成膜速
度を制御する。なお、この間、容器１０に内蔵されたヒ
ータの通電量及び冷媒通路に供給するエア流量を制御
し、容器の温度を一定に保持する。所定の膜厚が形成さ
れた後、容器１０を下げ、同時にヒータケース８を移動
させて蒸着材料の蒸発を停止する。続いて、次の構成膜
に対応する蒸着源についても、同様の操作を行い、第２
層、第３層と積層し、全ての構成膜を形成した段階で容
器１０をシールド１６内部に下降させ、薄膜形成を終了
する。この後、次の基板を未処理基板と交換し、同様の
処理を繰り返し行う。このように、容器加熱ヒータ供給
電力の制御と冷却水またはエア等の流量制御により容器
温度を制御することにより、どのような成膜条件であっ
ても連続薄膜形成を安定して行うことができる。The evaporation amount is monitored by a film thickness sensor (not shown) provided in the vacuum chamber, the signal is fed back to the heater power supply, the radiation power of the heater is adjusted, and the film forming speed is controlled. During this time, the amount of electricity supplied to the heater incorporated in the container 10 and the flow rate of air supplied to the refrigerant passage are controlled to keep the temperature of the container constant. After the predetermined film thickness is formed, the container 10 is lowered, and at the same time, the heater case 8 is moved to stop the evaporation of the deposition material. Subsequently, the same operation is performed for the evaporation source corresponding to the next constituent film, and the second
The container 10 is lowered into the shield 16 when all the constituent films are formed by laminating the layers and the third layer, and the thin film formation is completed. Thereafter, the next substrate is replaced with an unprocessed substrate, and the same processing is repeated. By controlling the container temperature by controlling the power supplied to the container heater and controlling the flow rate of the cooling water or air, continuous thin film formation can be performed stably under any film forming conditions. .
【００３０】次に、本実施形態の蒸着源を用いた成膜結
果の一例を示す。ヒータは、アルミナ製セラミックヒー
タを用い、外径４０ｍｍ、内径２０ｍｍの中心リング状
ヒータ７ａと外径１００ｍｍ、内径６０ｍｍの外側リン
グ状ヒータ７ｂをステンレス製のケース内に、直交する
２本の支持体を介して固定した。なお、ヒータの底面と
ケースの底面間の距離は１０ｍｍとした。ヒータ近傍に
熱電対を配置し、中心側及び外側ヒータの温度をそれぞ
れ約３７０℃及び約５００℃に加熱した。一方、材料容
器は、内径１００ｍｍ、深さ１５ｍｍの蒸着材料収納部
を有する円柱状アルミニウム製容器を用いて、内蔵ヒー
タにより容器を２００℃に加熱した。この条件で、Ａｌ
ｑ３を蒸発させ膜形成を行ったところ、 蒸着材料の分
解、変質及び突沸等は起こらず、従って蒸着材料の利用
率の高い均質な有機薄膜の作成が可能となる。Next, an example of a film formation result using the evaporation source of the present embodiment will be described. As the heater, an alumina ceramic heater is used, and a center ring-shaped heater 7a having an outer diameter of 40 mm and an inner diameter of 20 mm and an outer ring-shaped heater 7b having an outer diameter of 100 mm and an inner diameter of 60 mm are provided in a stainless steel case in two orthogonally spaced supports. Fixed through. The distance between the bottom of the heater and the bottom of the case was 10 mm. A thermocouple was arranged near the heater, and the temperatures of the center side heater and the outer heater were heated to about 370 ° C. and about 500 ° C., respectively. On the other hand, as a material container, a cylindrical aluminum container having a deposition material storage portion having an inner diameter of 100 mm and a depth of 15 mm was used, and the container was heated to 200 ° C. by a built-in heater. Under these conditions, Al
was subjected to evaporation of the q 3 film formation, decomposition of the evaporation material, does not occur deterioration and bumping or the like, thus enabling the creation of a homogeneous organic thin film with high utilization rate of the vapor deposition material.
【００３１】（第３の実施形態）次に、本発明の第３の
実施形態を図４に示す。本実施形態の蒸着源は、ヒータ
ケース８と材料容器１０を所定の間隔を開けて配置し、
この間隔の間に挿入退避可能なシャッタ１７を配置した
ものである。即ち、シャッタ１７をヒータケース８と材
料容器間１０に挿入し、ヒータを予め蒸着材料が蒸発す
る温度まで加熱しておく。薄膜形成時に、シャッタを開
けて材料容器１０を上昇させて、材料容器１０の上面と
ヒータケース８の下面を近接させて、ヒータの輻射熱が
蒸着材料に入射し、材料表面を加熱して蒸発させる構成
としたものである。このように、シャッタを用いること
により、蒸発の開始及び停止を制御することもできる。(Third Embodiment) Next, a third embodiment of the present invention is shown in FIG. In the vapor deposition source of the present embodiment, the heater case 8 and the material container 10 are arranged at a predetermined interval,
A shutter 17 that can be inserted and retracted is arranged during this interval. That is, the shutter 17 is inserted between the heater case 8 and the material container 10, and the heater is previously heated to a temperature at which the deposition material evaporates. At the time of forming a thin film, the material container 10 is raised by opening the shutter, and the upper surface of the material container 10 and the lower surface of the heater case 8 are brought close to each other. It is configured. Thus, the start and stop of the evaporation can be controlled by using the shutter.
【００３２】ここで、シャッタとしては、２又はそれ以
上の金属板を熱伝導率の低い絶縁体を介して積層した断
熱シャッタ構造とするのが好ましく、容器温度の上昇を
より効果的に抑えることができる。アルミナのセラミッ
クヒーターと有機材料容器間に２枚の金属板を積層した
断熱シャッターを設けて行った実験では、蒸着材料はシ
ャッターを開けて１５秒以内で蒸発を開始し、３０秒程
度で安定した成膜レートが得られた。そして再びシャッ
ターを閉じると、成膜がその瞬間に停止した。即ち、輻
射ヒーターと材料容器間のシャッターを適時に開閉する
ことによって成膜の開始、停止を自在に制御することが
できることが分かった。このとき、ヒーターが定常温度
（５００℃）まで昇温する過程（約１０ｍｉｎ）におい
て、材料容器温度変化を５℃以下に抑えることができ
た。Here, it is preferable that the shutter has an adiabatic shutter structure in which two or more metal plates are laminated via an insulator having a low thermal conductivity, so that the rise in the container temperature can be suppressed more effectively. Can be. In an experiment conducted by providing an adiabatic shutter in which two metal plates were laminated between an alumina ceramic heater and an organic material container, the evaporation material started to evaporate within 15 seconds after opening the shutter, and stabilized in about 30 seconds. The film formation rate was obtained. When the shutter was closed again, the film formation stopped at that moment. That is, it was found that the start and stop of film formation can be freely controlled by opening and closing the shutter between the radiation heater and the material container in a timely manner. At this time, the temperature change of the material container could be suppressed to 5 ° C. or less in the process (about 10 minutes) in which the heater was heated to the steady temperature (500 ° C.).
【００３３】真空室内に、複数の蒸着源を配置し多層構
造の薄膜を形成する場合は、以上述べてきた方法以外
に、例えば、異なる蒸着材料を収納する容器を複数配置
し、ヒータをこれらの容器上に順次移動させる方法、あ
るいはヒータを固定し容器をヒータ直下に移動させてそ
れぞれの薄膜を形成する方法等様々な構成を用いること
が可能である。When a plurality of evaporation sources are arranged in a vacuum chamber to form a thin film having a multilayer structure, for example, in addition to the method described above, for example, a plurality of containers accommodating different evaporation materials may be arranged, and the heater may be used. Various configurations can be used, such as a method of sequentially moving them on a container, or a method of fixing a heater and moving the container directly below the heater to form respective thin films.
【００３４】[0034]
【発明の効果】以上から明らかなように、本発明の蒸着
源により、即ち、蒸着材料が持つ固有の赤外光に対する
吸収率を考慮し、最大の吸収率を示す波長領域を有する
熱線を用いることにより直接蒸着材料の表面を加熱し、
成膜時間のみ輻射ヒーターと有機材料を向かい合わせて
蒸発させる構成とすることにより、生産性を低下させる
ことなく、基板ごとの成膜プロセスが実現できる。その
結果、従来方式の長時間連続加熱による材料の浪費や変
質を抑制し、高品質で均質な薄膜を作製することができ
る。As is apparent from the above, a heat ray having a wavelength region showing the maximum absorption is used by the evaporation source of the present invention, that is, in consideration of the inherent absorptivity of the evaporation material for infrared light. By directly heating the surface of the deposition material,
By adopting a configuration in which the radiant heater and the organic material are evaporated while facing each other only during the film forming time, a film forming process for each substrate can be realized without reducing productivity. As a result, waste and deterioration of the material due to the conventional continuous heating for a long time can be suppressed, and a high-quality and uniform thin film can be produced.
【図１】本発明の第１の実施形態の蒸着源及び真空蒸着
装置を示す模式図である。FIG. 1 is a schematic diagram showing an evaporation source and a vacuum evaporation apparatus according to a first embodiment of the present invention.
【図２】ヒータの配置例を示す模式図である。FIG. 2 is a schematic diagram showing an example of the arrangement of heaters.
【図３】本発明の第２の実施形態の蒸着源及び真空蒸着
装置を示す模式図である。FIG. 3 is a schematic diagram showing an evaporation source and a vacuum evaporation apparatus according to a second embodiment of the present invention.
【図４】本発明の第３の実施形態の蒸着源及び真空蒸着
装置を示す模式図である。FIG. 4 is a schematic diagram showing an evaporation source and a vacuum evaporation apparatus according to a third embodiment of the present invention.
【図５】従来の蒸着源を示す模式的断面図である。FIG. 5 is a schematic sectional view showing a conventional evaporation source.
１ 真空室、 ２ 排気口、 ３ 基板搬送口、 ４ 基板ホルダ、 ５ 基板、 ６ 蒸着源、 ７ ヒータ、 ８ ヒータケース、 ９ 蓋、 １０ 材料容器、 １１ 蒸着材料、 １４ 支柱、 １５ ベローズ、 １６ 断熱シールド、 １７ シャッタ。 Reference Signs List 1 vacuum chamber, 2 exhaust port, 3 substrate transfer port, 4 substrate holder, 5 substrate, 6 evaporation source, 7 heater, 8 heater case, 9 lid, 10 material container, 11 evaporation material, 14 support, 15 bellows, 16 heat insulation Shield, 17 shutters.
フロントページの続き (72)発明者 秋山 進 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 (72)発明者 小西 暁夫 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 Ｆターム(参考） 4K029 BA62 BD00 BD01 CA01 DB06 DB12 DB14 DB18 5F103 AA01 BB57 DD30 LL20 RR01Continuation of the front page (72) Inventor Susumu Akiyama 5-8-1, Yotsuya, Fuchu-shi, Tokyo Inside Anelva Co., Ltd. (72) Inventor Akio Konishi 5-81-1, Yotsuya, Fuchu-shi, Tokyo Inside Anelva Co., Ltd. F term (reference) 4K029 BA62 BD00 BD01 CA01 DB06 DB12 DB14 DB18 5F103 AA01 BB57 DD30 LL20 RR01
Claims (9)
内の蒸着材料を加熱する加熱機構からなる蒸着源におい
て、該蒸着材料を加熱する輻射ヒータは、該材料容器の
上方に配置し、該容器内の蒸着材料の表面に放射し、該
輻射ヒータの輻射熱により直接加熱することを特徴とす
る蒸着源。In a vapor deposition source comprising a material container for storing a vapor deposition material and a heating mechanism for heating the vapor deposition material in the material container, a radiant heater for heating the vapor deposition material is disposed above the material container. An evaporation source, which radiates onto the surface of an evaporation material in a container and is directly heated by radiant heat of the radiant heater.
内の蒸着材料を加熱する加熱機構からなる蒸着源におい
て、該蒸着材料を加熱する輻射ヒータは、該材料容器の
上方に配置し、セラミック系材料を加熱することにより
発する輻射熱を利用し、かつ、該容器内の蒸着材料の表
面に放射し、該輻射熱により直接加熱することを特徴と
する蒸着源。2. A vapor deposition source comprising a material container for storing a vapor deposition material and a heating mechanism for heating the vapor deposition material in the material container, wherein a radiation heater for heating the vapor deposition material is disposed above the material container. An evaporation source characterized by utilizing radiant heat generated by heating a system material, radiating it to the surface of the evaporation material in the container, and directly heating by the radiant heat.
ミック材料であることを特徴とする請求項２に記載の蒸
着源。3. The evaporation source according to claim 2, wherein the radiation heater is made of an alumina ceramic material.
内の蒸着材料を加熱する加熱機構からなる蒸着源におい
て、該蒸着材料を加熱する輻射ヒータと前記材料容器
は、どちらか一方が両者を近接又は離脱可能にする移動
機構を備えており、薄膜形成時は該輻射ヒータと該材料
容器を近接させ、薄膜形成後は離脱させることを特徴と
する蒸着源。4. In a vapor deposition source comprising a material container for storing a vapor deposition material and a heating mechanism for heating the vapor deposition material in the material container, one of the radiant heater for heating the vapor deposition material and the material container are both provided. An evaporation source, comprising: a moving mechanism that enables approach or detachment, wherein the radiation heater and the material container are brought close to each other when a thin film is formed, and detached after the thin film is formed.
料容器の間に配置することを特徴とする請求項１〜４の
いずれか1項に記載の蒸着源。5. The evaporation source according to claim 1, wherein a shutter plate is disposed between the radiation heater and the material container.
つ以上のリング状ヒータであることを特徴とする請求項
１〜５のいずれか1項に記載の蒸着源。6. The radiant heater has two different heating temperatures.
The evaporation source according to any one of claims 1 to 5, wherein the evaporation source is one or more ring-shaped heaters.
容器内の該蒸着材料を加熱して蒸気とし、該蒸気を凝縮
して基板上に堆積させて薄膜を形成する方法において、
該蒸着材料を加熱する輻射ヒータは、該容器の上方に配
置し、かつ、該容器内の蒸着材料の表面を放射し、該輻
射ヒータの輻射熱により直接加熱することにより発生し
た蒸気を輻射ヒータ上方に配置された基板上に薄膜を形
成することを特徴とする薄膜形成方法。7. A method for forming a thin film by heating a vapor deposition material in a container and a vapor in the container in a vacuum chamber and condensing the vapor and depositing the vapor on a substrate.
A radiant heater for heating the vapor deposition material is disposed above the container, and irradiates the surface of the vapor deposition material in the container, and emits steam generated by directly heating by radiant heat of the radiant heater. Forming a thin film on a substrate arranged in a thin film.
らか一方が両者を近接、又は離脱可能にする移動機構を
備えており、薄膜形成時は該輻射ヒータと該材料容器を
近接させ、薄膜形成後は離脱させることを特徴とする請
求項７記載の薄膜形成方法。8. The radiant heater and the material container each have a moving mechanism that allows one of them to approach or separate from the other. When forming a thin film, the radiant heater and the material container are brought close to each other. 8. The method for forming a thin film according to claim 7, wherein the film is separated after the formation.
源の材料容器内に収納される蒸着材料を加熱蒸発させ、
該蒸着源の上方に配置された基板上に薄膜を形成する装
置において、請求項1〜6のいずれか1項に記載の蒸着源
を少なくとも1つ以上を配置したことを特徴とする薄膜
形成装置。9. A method for disposing the evaporation source in a vacuum chamber, heating and evaporating an evaporation material stored in a material container of the evaporation source,
An apparatus for forming a thin film on a substrate disposed above the vapor deposition source, wherein a thin film forming apparatus comprising at least one or more vapor deposition sources according to any one of claims 1 to 6. .
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005256113A (en) * | 2004-03-12 | 2005-09-22 | Ulvac Japan Ltd | Vacuum deposition apparatus |
| JP2007231368A (en) * | 2006-03-01 | 2007-09-13 | Fujifilm Corp | Vapor deposition material evaporating device |
| JP2008519905A (en) * | 2004-11-09 | 2008-06-12 | イーストマン コダック カンパニー | Control of adhesion of vaporized organic materials |
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| JP2015514864A (en) * | 2012-02-27 | 2015-05-21 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウＦｒａｕｎｈｏｆｅｒ−Ｇｅｓｅｌｌｓｃｈａｆｔ ｚｕｒ Ｆｏｅｒｄｅｒｕｎｇ ｄｅｒ ａｎｇｅｗａｎｄｔｅｎ Ｆｏｒｓｃｈｕｎｇ ｅ．Ｖ． | Method for depositing a LiPON layer on a substrate |
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| WO2005087970A1 (en) * | 2004-03-12 | 2005-09-22 | Ulvac, Inc. | Vacuum deposition apparatus |
| JP2005256113A (en) * | 2004-03-12 | 2005-09-22 | Ulvac Japan Ltd | Vacuum deposition apparatus |
| JP2008519905A (en) * | 2004-11-09 | 2008-06-12 | イーストマン コダック カンパニー | Control of adhesion of vaporized organic materials |
| JP2007231368A (en) * | 2006-03-01 | 2007-09-13 | Fujifilm Corp | Vapor deposition material evaporating device |
| JP2008174816A (en) * | 2007-01-22 | 2008-07-31 | Sony Corp | Vapor deposition apparatus, vapor deposition method, organic electroluminescent element, and display apparatus |
| JP2011521099A (en) * | 2008-04-15 | 2011-07-21 | グローバル ソーラー エナジー インコーポレーテッド | Apparatus and method for manufacturing thin film solar cells |
| US10312403B2 (en) | 2008-04-15 | 2019-06-04 | Global Solar Energy, Inc. | Apparatus and methods for manufacturing thin-film solar cells |
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| US9863034B2 (en) | 2009-07-10 | 2018-01-09 | Mitsubishi Heavy Industries, Ltd. | Vacuum vapor deposition method |
| JP2011256427A (en) * | 2010-06-09 | 2011-12-22 | Hitachi Zosen Corp | Method for evaporating/sublimating evaporation material in vacuum deposition apparatus and crucible device for vacuum deposition |
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| JP2012132049A (en) * | 2010-12-20 | 2012-07-12 | Mitsubishi Heavy Ind Ltd | Vacuum deposition device and vacuum deposition method |
| WO2012086230A1 (en) * | 2010-12-20 | 2012-06-28 | 三菱重工業株式会社 | Vacuum deposition equipment and vacuum deposition method |
| JP2015514864A (en) * | 2012-02-27 | 2015-05-21 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウＦｒａｕｎｈｏｆｅｒ−Ｇｅｓｅｌｌｓｃｈａｆｔ ｚｕｒ Ｆｏｅｒｄｅｒｕｎｇ ｄｅｒ ａｎｇｅｗａｎｄｔｅｎ Ｆｏｒｓｃｈｕｎｇ ｅ．Ｖ． | Method for depositing a LiPON layer on a substrate |
| WO2017042915A1 (en) * | 2015-09-09 | 2017-03-16 | ギガフォトン株式会社 | Target storage device |
| JPWO2017042915A1 (en) * | 2015-09-09 | 2018-06-28 | ギガフォトン株式会社 | Target container |
| US10349508B2 (en) | 2015-09-09 | 2019-07-09 | Gigaphoton Inc. | Target storage device |
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