JP2002348142A - Cover glass for semiconductor package and solid-state imaging element - Google Patents
Cover glass for semiconductor package and solid-state imaging elementInfo
- Publication number
- JP2002348142A JP2002348142A JP2002136521A JP2002136521A JP2002348142A JP 2002348142 A JP2002348142 A JP 2002348142A JP 2002136521 A JP2002136521 A JP 2002136521A JP 2002136521 A JP2002136521 A JP 2002136521A JP 2002348142 A JP2002348142 A JP 2002348142A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- platinum
- content
- raw material
- semiconductor package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000006059 cover glass Substances 0.000 title claims abstract description 10
- 238000003384 imaging method Methods 0.000 title claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 118
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims description 7
- 239000005388 borosilicate glass Substances 0.000 claims description 5
- 239000008187 granular material Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 26
- 229910052770 Uranium Inorganic materials 0.000 description 16
- 238000002844 melting Methods 0.000 description 14
- 230000008018 melting Effects 0.000 description 14
- 229910052776 Thorium Inorganic materials 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000000265 homogenisation Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 239000004927 clay Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004017 vitrification Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 235000014443 Pyrus communis Nutrition 0.000 description 8
- 206010040925 Skin striae Diseases 0.000 description 8
- 230000005260 alpha ray Effects 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910018068 Li 2 O Inorganic materials 0.000 description 5
- 238000001444 catalytic combustion detection Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 239000006060 molten glass Substances 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000002285 radioactive effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000006063 cullet Substances 0.000 description 3
- 238000004031 devitrification Methods 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000005304 optical glass Substances 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 235000014121 butter Nutrition 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910013553 LiNO Inorganic materials 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 1
- 150000008041 alkali metal carbonates Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000006114 decarboxylation reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- -1 oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/04—Particles; Flakes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/08—Metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
ãïŒïŒïŒïŒã[0001]
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ã®åªããç¹æ§ãæããã¬ã©ã¹åã³ãã®è£œé æ¹
æ³ã«é¢ãããBACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass for a semiconductor package such as a CCD (solid-state image sensor) used for a video camera or the like. More specifically, the present invention has a low content of U (uranium), which has a particularly large amount of α-ray emission among radioactive isotopes, and can effectively reduce soft errors in a solid-state imaging device and the like, and The present invention relates to a glass having various excellent characteristics for use in a package and a method for producing the glass.
ãïŒïŒïŒïŒã[0002]
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ïœïŒåã³ã©ãžãŠã ïŒïŒ²ïœïŒãæããããã2. Description of the Related Art Since semiconductors such as CCDs cause soft errors due to α rays emitted from glass for packaging, the amount of radioisotopes emitting α rays contained in glass for packaging has been reduced. I have. As radioisotopes, uranium (U), thorium (T
h) and radium (Ra).
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ããã¬ã©ã¹ã§ã¯ãå®è³ªçã«äžå¯èœã§ãã£ãã[0003] Among radioisotopes, uranium (U) emits a large amount of α-rays, and is about 5 to 10 times as large as thorium (Th). Therefore, there is a report that it is particularly important to reduce the content of uranium (U) in reducing the amount of α-ray emission in a peripheral material of a semiconductor. In recent years, with the increase in the density of solid-state imaging devices, noise and soft errors due to α rays have become a major obstacle to improving image quality. for that reason,
It has become increasingly important to reduce the amount of emitted α-rays, and the amount of emitted α-rays has been targeted to be 0.01 c / cm 2 · h or less [Insbeck 1985 Spring No. 3 (No. 3) 83-8]
8]. However, the demand for reducing the amount of α-ray emission has become more severe, and recently, the target is 0.004 c / cm 2 · h or less. However, in order to achieve this goal, it was practically impossible with a glass having a content of U having a large α-ray emission exceeding 10 ppb.
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æå¶ã§ããã¬ã©ã¹ã®è£œé æ¹æ³ã®æäŸã«ãããHeretofore, it has been considered that most of radioactive isotopes contained in glass are derived from glass raw materials. However, the present inventor, as a raw material of the glass, a trial production of a glass using an ultra-high purity thing having a very small content of radioisotopes, the amount of radioisotopes contained in the obtained glass is still high Level. In addition, ultra-high-purity glass raw materials have a practical problem in terms of cost. Thus, it has been found that in order to reduce the radioisotope contained in the glass, it is necessary to suppress the contamination from the glass manufacturing process in addition to carefully selecting the raw material of the glass. Therefore, one of the objects of the present invention is to provide a method for producing glass which can suppress the incorporation of radioisotopes, particularly U (uranium) having a large amount of α-ray radiation.
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ããšãæãŸããã[0005] Incidentally, reduction of the content of radioisotopes
In addition to the above, (1) Internal chipping
Optically homogenous material with no defects or surface defects,
(2) a highly reliable material with little deterioration over time;
And (3) sealed with an alumina ceramic package
Is required to be a material that does not crack or strain
You. Regarding (1), internal defects such as bubbles, foreign matter, and striae
And surface defects such as polishing flaws and chips. In addition to this
In recent years, with the increase in density of solid-state
Foreign matter, especially due to platinum used as a glass melting vessel
Large foreign matter made of platinum (hereinafter referred to as platinum butter)
Is becoming an obstacle. Regarding (2), long-term
During use, fogging occurred on the glass surface due to moisture
And the transmittance decreases due to the solarization phenomenon.
In some cases. Therefore, the cover glass for the package
Therefore, high weather resistance and solarization resistance are required.
Regarding (3), for example, in the case of a CCD,
The CCD chip with the three-color mosaic filter is made of aluminum
Set in a ceramic package and cover it
㌠The structure is made by bonding glass with epoxy resin etc.
You. Therefore, cover glass and alumina ceramic package
It is necessary to match the coefficient of thermal expansion of the cage. A
The thermal expansion coefficient of lumina ceramics is usually 60-75 Ã 10
-7K-1And the thermal expansion coefficient of the glass is the same.
Equal or slightly smaller 45-75 Ã 10 -7K-1Is in the range
It is desirable.
ãïŒïŒïŒïŒã[0006]
ãçºæã解決ããããšãã課é¡ãããã§æ¬çºæã®ç¬¬äžã®
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ã±ãŒãžçšã¬ã©ã¹ã補é ããæ¹æ³ãæäŸããããšã«ãããSUMMARY OF THE INVENTION Accordingly, a first object of the present invention is to provide a method for producing glass for a semiconductor package capable of suppressing the incorporation of radioactive isotopes, particularly U, into glass and the incorporation of platinum particles into glass. Is to provide.
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ããFurther, a second object of the present invention is to provide a solid material which has a low content of U among platinum buttes and radioisotopes, and which has high weather resistance, solarization resistance and good sealing properties with an alumina ceramic package. It is an object of the present invention to provide a glass useful for a semiconductor package such as an imaging device.
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ãç¹åŸŽãšããããã±ãŒãžçšã¬ã©ã¹ã®è£œé æ¹æ³ã«é¢ãããSUMMARY OF THE INVENTION The present invention relates to a method for producing glass for packaging, characterized in that at least the raw material batch is vitrified in a refractory container.
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ã¬ã©ã¹ã«é¢ããã[0009] The present invention further relates to a borosilicate glass having a U content of 5 ppb or less and a Th content of 20 ppb or less.
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ãŠæ¬çºæã宿ãããIn general, optical glass represented by a lens used in various optical systems is required to have extremely high homogeneity. However, in a refractory tank, the melting temperature of the glass is high, so that the glass is easily corroded, and striae and bubbles are generated in the glass. Therefore, platinum or a platinum alloy excellent in heat resistance and corrosion resistance is frequently used in a glass melting tank. In the case of manufacturing a glass for a package, since a relatively high-temperature melting is required, a platinum container having high heat resistance and being hardly corroded by the molten glass is used. However,
As a result of investigation by the present inventors, a large amount of platinum dust was generated when the raw material batch was melted and vitrified in a platinum container and further purified in the platinum container. Furthermore, as a result of the investigation, surprisingly, when vitrified in a platinum container, U
And the amount of Th also increased. On the other hand, it has been found that when at least the melt vitrification of the raw material batch is performed in a refractory vessel, the generation of platinum dust can be suppressed, and the increase in the amounts of U and Th can be significantly suppressed, and the present invention has been completed. .
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ãäž»æåãšããã»ã©ããã¯ã¹ã§ããããšã奜ãŸãããIn the present invention, refractories include, for example, alumina (Al 2 O 3 ), quartz (SiO 2 ), clay (Al 2 O 3)
+ SiO 2 ), zirconia (ZrO 2 ), etc. as a main component. These ceramics are more easily corroded by molten glass than platinum, and have not been used for melt vitrification of a raw material batch in the production of optical glass requiring high homogeneity.
According to the study of the present inventors, the mixing amount of the ceramic container into the molten glass is about 0.03 to 0.3%, whereas the mixing amount of the platinum container into the molten glass is 0%. .0
It is about 003 to 0.003%. Nevertheless, the amount of U and Th mixed into the molten glass when the ceramic container was used was much smaller than that when the platinum container was used. Therefore, it is estimated that the amounts of U and Th contained in a ceramic container such as alumina, clay, zirconia, and quartz are orders of magnitude smaller than that of a platinum container. When melt vitrification is performed using a ceramic container as in the present invention, the container itself is slightly corroded, but the amount of radioisotope mixed into the glass is significantly smaller than that of platinum. Further, since these ceramics and the like are usually composed of common elements with the components of the glass, there is no problem with the physical properties of the glass when mixed. In the present invention, the refractory preferably has a U content of 2%.
Ceramics of 0 ppm or less, more preferably 10 ppm or less, and still more preferably 5 ppm or less can be mentioned. When the content of U exceeds 20 ppm, the amount of α-ray emission desirable as glass for a package is 0.004 c /
It is difficult to obtain glass having a size of cm · h or less. Further, the refractory is preferably a ceramic mainly composed of an oxide of aluminum, silicon or zirconium.
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¥ãæå¶ãããIn the production method of the present invention, at least the raw material batch is vitrified in a refractory vessel. In the production of glass, generally, a raw material batch is heated and melted to be vitrified, defoamed and homogenized, and further homogenized to remove striae in the glass. As raw material batches, in addition to oxides such as silicic acid (SiO 2 ), ZnO and Sb 2 O 3 , carbonates and nitrates of alkali metals and alkaline earth metals (eg, Li 2 CO 3 , LiNO 3 , Na 2 CO 3 , K 2 CO 3 ,
BaCO 3 ), aluminum hydroxide (Al (OH) 3 ),
Boric acid (H 3 BO 3 ), NaCl or the like is used. For example, an alkali metal carbonate causes a decarboxylation reaction when heated, and an alkali metal oxide (for example, L
i 2 O, Na 2 O, K 2 O, etc.) melts oxides such as silicic acid (SiO 2 ) to vitrify. However, alkali metal oxides and the like generated during the melt vitrification reaction have high activity,
Intensely erodes the container wall. Therefore, in the present invention, the melt vitrification of the raw material batch is performed in a refractory container that has a low content of radioisotope and can become a glass component, and even if the wall surface of the container is eroded, the radioisotope Suppresses mixing of element and platinum.
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ããæ³¡ãèçãé€å»ã§ãããIn the production method of the present invention, at least the raw material batch is melted and vitrified in a refractory container, and further, defoaming, homogenization and homogenization for removing striae are also performed in the refractory container. Can also be done. Alternatively, the defoaming / homogenization and the homogenization for removing striae can be performed in a container made of platinum. Compared with the melt vitrification, in the defoaming / homogenization and the homogenization for the removal of striae, the erosion of the container is less likely to occur, and even in the case of a platinum container, the mixing of the radioisotope and platinum is less. In particular, the homogenization for removing stria is preferably performed in a platinum container. By performing homogenization in a platinum container, bubbles and striae, which are internal defects in glass, can be more easily removed.
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ããšãã§ãããIn the production method of the present invention, any form of compounds such as oxides, carbonates, nitrates, hydroxides and sulfates can be used as glass raw materials. In the production method of the present invention, the mixing of radioisotope and platinum from the container during the glass production process can be suppressed, but from the viewpoint of reducing the content of radioisotope in the obtained glass, as a raw material batch, It is preferable to use a high-purity raw material batch. In particular, the high-purity raw material batch has a U content of 3 ppb or less and a Th content of 15 ppb.
It is preferable that it is not more than pb from the viewpoint of manufacturing a glass for a package having a small content of U and Th.
By blending such raw materials to produce a raw material batch and melt vitrification, finally a glass having a U content of 5 ppb or less and a Th content of 20 ppb or less can be obtained.
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ã§ãããNext, the glass of the present invention will be described. The glass for packaging of the present invention is a borosilicate glass having a U content of 5 ppb or less and a Th content of 20 ppb or less. When the content of U and Th is not more than the above values, it is possible to obtain a glass which is desirable as a glass for a package, has an α-ray emission of 0.004 c / cm 2 · h or less, and has a very low soft error rate. .
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ããšãé©åœã§ãããThe borosilicate glass of the present invention, preferably SiO 2 50~78% B 2 O 3 5~25% by weight percent Al 2 O 3 0~ 8% Li 2 O 0~ 5% Na 2 O 0 -18% K 2 O 0-20% (however, Li 2 O + Na 2 O + K 2 O 5-20%), the content of the above components is at least 80% or more, and the thermal expansion coefficient is 45-75 à Suitably, it is 10 â7 K â1 .
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ãããšãé©åœã§ãããThe operation of each component and the reason for setting the numerical values within a certain range will be described below. SiO 2 and B 2 O 3 are components that form the skeleton of borosilicate glass. When the content of SiO 2 is less than 50% and the content of B 2 O 3 exceeds 25%, the weather resistance tends to decrease. Further, SiO 2 exceeds 78% and B 2 O 3 is 5%.
%, The meltability tends to deteriorate. Therefore, Si
O 2 is in the range of 50-78%, and B 2 O 3 is 5 to 2
Suitably, it is in the range of 5%. Al 2 O 3 is a component that improves the weather resistance of glass. However, if it exceeds 8%, striae are liable to be generated in the glass, and the production tends to be difficult. Therefore, the content of Al 2 O 3 is suitably set to 8% or less.
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奜ãŸãããLi 2 O, Na 2 O and K 2 O are components that act as fluxes and improve devitrification resistance. For that purpose, the total content of one or more of these components is suitably at least 5%. However, if the total content of one or more of these components exceeds 20%, the weather resistance tends to be poor and the coefficient of thermal expansion tends to be too large. Further, among these components, Li 2
When O is added in a large amount, the devitrification resistance tends to deteriorate, and the effect of invading the refractory container is also strong. Therefore, the content of Li 2 O is preferably set to 5% or less. If Na 2 O and K 2 O exceed 18% and 20%, respectively, the weather resistance tends to deteriorate, and the coefficient of thermal expansion tends to be too large. Therefore, the contents of Na 2 O and K 2 O are preferably set to 18% or less and 20% or less, respectively.
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ç¹æ§ãæãªããªãçšåºŠã«æ·»å ããããšã¯å¯èœã§ãããIn addition to the above components, alkaline earth metal oxides (MgO, MgO, etc.) may be used within a range of 20% or less for the purpose of improving weather resistance, melting property, devitrification resistance, etc., and adjusting the thermal expansion coefficient. Ca
O, SrO, BaO, etc.), ZnO, halogens such as chlorine and the like can be added. Furthermore, As 2 O 3 and Sb
A defoaming agent such as 2 O 3 can be appropriately added as needed. Further, other trivalent or higher polyvalent metal oxides can be added to such an extent that desired properties are not impaired.
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ãšãã§ãããIn the glass of the present invention, particularly when high weather resistance is required, Pb is used as a solarization inhibitor.
It is effective to add O, TiO 2 , Nb 2 O 5 and the like. However, the content of U is 3 ppb or less, and Th
Raw material having a content of 15 ppb or less is easily available, and
Most preferably, PbO having a sharp ultraviolet absorption is added. However, it is not necessary to add PbO excessively, and on the contrary, disadvantages such as excessive absorption of ultraviolet light occur. Therefore, it is appropriate to set the amount to 3% or less. That is, by containing 0.01 to 3% by weight of PbO, a glass having high reliability for long-term exposure can be obtained.
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ã«ç€ºããThe present invention will be further described with reference to the following examples.
First, the contents of platinum and U and Th contained in the glass obtained by the production method of the present invention were compared with those of the glass obtained by the conventional production method. Example 1 No. 1 in Table 1. Raw material batches (U content 2 ppb, Th content 14
ppb) (raw material batch (1)). 300 kg of this raw material batch is transferred to a 200 liter SiO 2
After melting and vitrifying at 1300 ° C. using a crucible, granular cullet was obtained. Using 35 kg of this cullet, melting and purification (defoaming and homogenization) were performed in a 1460 ° C. electric furnace in a 16-liter platinum crucible. A glass block was obtained by casting into an iron metal frame and performing predetermined annealing (this is referred to as glass A). Next, non-defective parts were selected from the glass block, and the end face was polished to inspect for internal defects.
First, the number of platinum particles was observed with a 20 Ã stereo microscope, and counting was performed using a 100 Ã optical microscope by distinguishing platinum particles having a particle diameter of 2 ÎŒm or more from bubbles and the like. Table 2 shows the glass production conditions, and Table 3 shows the analysis test results.
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ã衚ïŒã«ç€ºããåæè©Šéšçµæã衚ïŒã«ç€ºããComparative Example 1 35 kg of the same raw material batch as used in Example 1 was directly charged into a 16-liter platinum crucible and melt-vitrified at 1460 ° C., and subsequently melted and refined (defoamed) with a platinum crucible. And homogenization), followed by casting and annealing to obtain a glass block (this is referred to as comparative glass A). Further, defects inside the glass of this glass block were inspected in the same procedure as in Example 1. Table 2 shows the glass production conditions, and Table 3 shows the analysis test results.
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ã«ç€ºããåæè©Šéšçµæã衚ïŒã«ç€ºããExample 2 Using 1800 kg of the same raw material batch as used in Example 1, using a clay (clay) crucible having a capacity of about 800 liters, the glass was melted and vitrified at 1450 ° C. by gas heating.
Subsequently, it was melted and refined (defoaming and homogenizing) at 1450 ° C. to obtain a glass block. (This is glass B).
Further, defects inside the glass of this glass block were inspected in the same procedure as in Example 1. Table 2 shows glass production conditions
The results of the analysis test are shown in Table 3.
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ããé£ç¶æº¶èæ¹åŒã«ãããŠãåæ§ã®åŸåã瀺ãããThe amounts of U and Th contained in the raw material batches of Examples 1 and 2 and Comparative Example 1 and the three types of glasses were determined by IC.
P (Inductively Coupled Pla)
quantified by sma) -MASS analysis. Table 3 shows the results. As shown in Table 3, the glass contamination in the melting and refining process was the least in the glass B of Example 2 in which all of the production steps were performed in a container made of a refractory. Further, from the results of Example 1, it was clarified that when using a container made of platinum, the initial melting and vitrification step can be remarkably reduced by using a container made of a refractory. In these examples, the intermittent melting method was used, but the same tendency was shown in the continuous melting method.
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ã«ç€ºããåæè©Šéšçµæã衚ïŒã«ç€ºããExample 3 No. 3 in Table 1 A raw material batch was prepared using a highly purified ultra-high purity raw material so as to have one composition (this is referred to as a raw material batch (2)). The amount of U in the raw material batch is 1
The ppb and Th amount was 5 ppb. This raw material batch 1
Using 800 kg, using a clay crucible having a capacity of about 800 liters and melting and refining at 1460 ° C. using a clay crucible in the same manner as in Example 2, followed by melting and refining (defoaming and homogenizing) at 1460 ° C. A glass block was obtained (this is called glass C). Defects inside the glass of this glass block were inspected in the same procedure as in Example 1. further,
ICP-MASS analysis was also performed. Table 2 shows glass production conditions
The results of the analysis test are shown in Table 3.
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ããããšã確èªããããExample 4 Next, in Table 1 PbO having a U content of 0.02 ppb or less and a Th content of 0.02 ppb or less was added to the composition in an amount of 1%, and melted and vitrified in a SiO 2 crucible in the same manner as in Example 1 to obtain a cullet. Was melt-refined in a 16-liter platinum crucible to obtain a glass block. (This is glass D). Glass D has approximately the same U and Th contents as glass A in Table 2, and 10 pieces of platinum butter.
/ 100 ml or less. A sample was cut out from the glass D and the glass A, and polished face-to-face to a thickness of 10 mm, and Shimadzu MP
The transmittance was measured at -2000. Next, after irradiating with ultraviolet rays based on the Japan Optical Glass Industrial Association measurement standard JOGIS-04, the transmittance was measured, and the change in transmittance before and after the irradiation was compared. As a result, the transmittance was slightly reduced in glass A, but no change was observed in glass D. That is, it was confirmed that the addition of PbO was effective for improving the solarization resistance.
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ãäœæžã§ããããšã倿ãããTest Example A cover glass made of the glasses A, B and C obtained in the examples and the comparison glasses A and B was sealed in an alumina ceramic package having a built-in CCD chip having 580,000 effective pixels. The presence or absence of a soft error when used in an image sensor was investigated. Table 3 shows the results. It has been found that the use of a cover glass according to the invention can significantly reduce soft errors.
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嫿éïŒïœïœïœä»¥äžãïœå«æéïŒïŒïœïœïœä»¥äžïŒãäœ
補ãã宿œäŸïŒãšåæ§ã®æ¹æ³ã«ãããæ¬çºæã®ã¬ã©ã¹ã
äœè£œããããã®ã¬ã©ã¹ã«ã€ããŠïŒµåã³ïŒŽïœã®å«æéãæž¬
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ããçœéããã¯ïŒïŒã±ïŒïŒïŒïŒïœïœä»¥äžã§ãã£ããExample 5 In Table 1, No. 2, 3 and No. Also for glasses having compositions of 5 to 8, the raw material batch (U
Content of 3 ppb or less and Th content of 15 ppb or less), and the glass of the present invention was produced in the same manner as in Example 1. As a result of measuring the contents of U and Th for this glass, each of the glasses was almost the same as the glass A of Example 1, the U content was 5 ppb or less, and the Th content was 20 ppb or less. Further, in all the glasses, the number of platinum particles was 10/100 ml or less.
ãïŒïŒïŒïŒã衚ïŒã«æ¬çºæã®ã¬ã©ã¹çµæãééããŒã»ã³
ã衚瀺ã§ç€ºãã衚äžãç±èšåŒµä¿æ°ã¯ïŒŽïŒïŒ¡åæè£
眮ã«ã
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ïŒïŒïŒ
ã®é°å²æ°äžã«ïŒïŒïŒæéæããæã®è¡šé¢ç¶æ
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ãç±èšåŒµä¿æ°ãšåªããèåæ§ãæããŠãããTable 1 shows the glass composition of the present invention in terms of percent by weight. In the table, the coefficient of thermal expansion is a value measured by a TMA analyzer, and the weather resistance shows the surface state when the polished sample was exposed to an atmosphere at 65 ° C. and a relative temperature of 90% for 500 hours. Each of them has a coefficient of thermal expansion suitable for sealing with alumina ceramic and excellent weather resistance.
ãïŒïŒïŒïŒã[0031]
ã衚ïŒã ââââââââââââââââââââââââââââââââââ NO ïŒ ïŒ ïŒ ïŒ ïŒ ïŒ ïŒ ïŒ ââââââââââââââââââââââââââââââââââ SiO2 69.4 65.4 69.4 59.0 67.8 67.3 61.4 74.5 B2O3 17.6 17.6 15.0 20.0 15.8 15.8 17.8 6.3 Al2O3 3.6 3.6 3.0 2.5 3.1 1.6 6.6 Li2O 0.7 0.7 Na2O 0.7 0.7 10.0 4.3 10.7 6.2 K2O 8.0 8.0 1.6 15.4 8.1 7.2 1.3 BaO 1.3 5.1 ZnO 4.0 4.0 2.6 0.2 3.1 10.0 NaCl 2.0 Sb2O3 1.0 1.0 0.4 0.2 0.2 0.2 0.4 ââââââââââââââââââââââââââââââââââ ç±èšåŒµä¿æ° 48 50 67 72 65 64 47 55 ïŒÃ10-7-1ïŒ èåæ§ å€åãã· å€åãã· å€åãã· å€åãã· å€åãã· å€åãã· å€åãã· å€åãã· ââââââââââââââââââââââââââââââââââ[Table 1] {NO 1 2 3 4 5 6 7 8} âââââââââââââââââââââââââââââââ SiO 2 69.4 65.4 69.4 59.0 67.8 67.3 61.4 74.5 B 2 O 3 17.6 17.6 15.0 20.0 15.8 15.8 17.8 6.3 Al 2 O 3 3.6 3.6 3.0 2.5 3.1 1.6 6.6 Li 2 O 0.7 0.7 Na 2 O 0.7 0.7 10.0 4.3 10.7 6.2 K 2 O 8.0 8.0 1.6 15.4 8.1 7.2 1.3 BaO 1.3 5.1 ZnO 4.0 4.0 2.6 0.2 3.1 10.0 NaCl 2.0 Sb 2 O 3 1.0 1.0 0.4 0.2 0.2 0.2 0.4 ââââââââââââââââââââââââââââââââââ Coefficient of thermal expansion 48 50 67 72 65 64 47 55 (à 10 -7 K -1 ) Weather resistance Change pear Change pear Change pear Change pear Change pear Change pear Change pear Change pear âââââââââââââââââ âââââââââââââââââ
ãïŒïŒïŒïŒã[0032]
ã衚ïŒã âââââââââââââââââââââââââââââââââââ 䜿çšåæ æº¶èæ¡ä»¶ ã¬ã©ã¹åå·¥çš æž æŸå·¥çš âââââââââââââââââââââââââââââââââââ åæãããïŒïŒïŒ 衚ïŒã®ïŒ®ïœïŒ ââââ ââââ ã¬ã©ã¹ïŒ¡ åäž SiO2補å©å çœé補å©å ïŒïŒïŒïŒâ ïŒïŒïŒïŒâ æ¯èŒã¬ã©ã¹ïŒ¡ åäž çœé補å©å çœé補å©å ïŒïŒïŒïŒâ ïŒïŒïŒïŒâ ã¬ã©ã¹ïŒ¢ åäž ç²å補å©å ç²å補å©å ïŒïŒïŒïŒâ ïŒïŒïŒïŒâ âââââââââââââââââââââââââââââââââââ åæãããïŒïŒïŒ 衚ïŒã®ïŒ®ïœïŒ ââââ ââââ ã¬ã©ã¹ïŒ£ åäž ç²å補å©å ç²å補å©å ïŒïŒïŒïŒâ ïŒïŒïŒïŒâ æ¯èŒã¬ã©ã¹ïŒ¢ åäž çœé補å©å çœé補å©å ïŒïŒïŒïŒâ ïŒïŒïŒïŒâ âââââââââââââââââââââââââââââââââââ[Table 2] åæ Raw materials used Melting conditions Vitrification process Clarification process ââ âââââââââââââââââââââââââââââââââ Raw material batch (1) No. 4 in Table 1 ââââ ââââ Glass A Same as above SiO 2 crucible Platinum crucible 1300 ° C 1460 ° C Comparative glass A Same as above Platinum crucible 1460 ° C 1460 ° C Glass B Same as above Clay crucible 1450 ° C 1450 ° C âââââââââ ââââââââââââââââââââââââââ Raw material batch (2) No. 1 in Table 1 ââââ ââââ Glass C Same as above Clay crucible Clay Crucible made 1460 ° C 1460 ° C Comparative glass B Same as above Platinum crucible Platinum crucible 1460 ° C 1460 ° C âââââââââââââ âââââââââââââââââââââ
ãïŒïŒïŒïŒã[0033]
ã衚ïŒã âââââââââââââââââââââââââââââââââââ ïŒµå«æé Th嫿é çœéããæ° ãœãããšã©ãŒ (ppb) (ppb) (ã±/100ml) âââââââââââââââââââââââââââââââââââ åæãããïŒïŒïŒ ïŒ ïŒïŒ âââ âââ ã¬ã©ã¹ïŒ¡ ïŒ ïŒïŒ ïŒïŒïŒ å°ãªã æ¯èŒã¬ã©ã¹ïŒ¡ ïŒ ïŒïŒ ïŒïŒïŒ2 å€ã ã¬ã©ã¹ïŒ¢ ïŒ ïŒïŒ ãªã 極ããŠå°ãªã âââââââââââââââââââââââââââââââââââ åæãããïŒïŒïŒ ïŒ ïŒ âââ âââ ã¬ã©ã¹ïŒ£ ïŒ ïŒ ãªã 極ããŠå°ãªã æ¯èŒã¬ã©ã¹ïŒ¢ ïŒ ïŒïŒ ïŒïŒïŒ2 å€ã âââââââââââââââââââââââââââââââââââ[Table 3]  U content Th content Number of platinum bumps Soft error (ppb) (ppb) (q / 100ml) åæ Raw material batch (1 ) 2 14 âââ âââ Glass A 417 <10 less Comparative glass A 721> 10 2 more Glass B 3 15 None very little ââââââââââââââââââ âââââââââââââââââ Raw material batch (2) 15 âââ âââ Glass C 2 8 None Very little Comparative glass B 7 10> 10 2 More ââââ âââââââââââââââââââââââââââââââ
ãïŒïŒïŒïŒã[0034]
ãçºæã®å¹æãæ¬çºæã«ããã°ãçœéããã®å«æéã䞊
ã³ã«ïŒµåã³ïŒŽïœã®å«æéãçã ããå°ãªãããœãããšã©
ãŒçãèããäœãåºäœæ®åçŽ åçã®åå°äœçšã®ããã±ãŒ
ãžçšã¬ã©ã¹ãæäŸããããšãã§ãããããã«ãç¹å®ã®çµ
æç¯å²ã«éå®ããããšã«ãã£ãŠãèåæ§ã«åªããã¢ã«ã
ãã»ã©ããã¯ããã±ãŒãžãšæŽåæ§ã®è¯ãç±èšåŒµä¿æ°ãæ
ã€ãã¬ã©ã¹ãæäŸããããšãã§ãããæ¬çºæã®ã¬ã©ã¹ã¯
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å
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ãçããªããä¿¡é Œæ§ã®é«ãåºäœæ®åçŽ åãäœè£œããããš
ãã§ããåºäœæ®åçŽ åã®é«è§£å床åãé«å¯åºŠåã«è²¢ç®ã
ãããšãã§ããããŸããæ¬çºæã®è£œé æ¹æ³ã«ããã°ã補
é å·¥çšã«ãããæŸå°æ§åäœå
çŽ åã³çœéããã®ã¬ã©ã¹ãž
ã®æ··å
¥ã倧å¹
ã«æå¶ããŠãããã±ãŒãžçšã¬ã©ã¹ã«é©ãã
ã¬ã©ã¹ãåŸãããšãã§ãããç¹ã«ãã¬ã©ã¹åæãšããŠé«
çŽåºŠåæãçšããããšã§ããããŸã§åŸãããŠããã¬ã©ã¹
ãããçã®æŸå°æ§åäœå
çŽ ã®å«æéãå°ãªãã¬ã©ã¹ã
補é ããããšãã§ãããAccording to the present invention, it is possible to provide a glass for a semiconductor package such as a solid-state image pickup device having a very low content of platinum particles and extremely low contents of U and Th and a remarkably low soft error rate. it can. Further, by limiting the composition to a specific composition range, it is possible to provide a glass having excellent weather resistance and having a coefficient of thermal expansion with good compatibility with the alumina ceramic package. The glass of the present invention has a remarkably low U and Th content, and can significantly reduce the occurrence of soft errors caused by α rays from the glass. or,
Excellent optical and thermal characteristics and weather resistance enable the production of highly reliable solid-state imaging devices without image distortion, contributing to higher resolution and higher density of solid-state imaging devices. can do. Further, according to the production method of the present invention, it is possible to significantly suppress the mixing of radioisotopes and platinum particles in the glass in the production process, and to obtain glass suitable for glass for packaging. In particular, by using a high-purity raw material as a glass raw material, it is possible to produce a glass having a lower content of radioactive isotopes such as U than glass obtained so far.
âââââââââââââââââââââââââââââââââââââââââââââââââââââ ããã³ãããŒãžã®ç¶ã ã¿ãŒã (åèïŒ 4G062 AA04 BB01 BB05 BB20 DA06 DA07 DB01 DB02 DB03 DC03 DC04 DD01 DE01 DE02 DF01 DF02 DF03 EA01 EA02 EA03 EA10 EB01 EB02 EB03 EB04 EC01 EC02 EC03 EC04 ED01 ED02 EE01 EE02 EF01 EF02 EG01 EG02 FA01 FA10 FB01 FB02 FC01 FD01 FE01 FF01 FG01 FG02 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ04 JJ05 JJ06 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM02 NN40 4M118 AA08 AA10 BA10 HA02 HA40 ââââââââââââââââââââââââââââââââââââââââââââââââââç¶ ã Continued on the front page F term (reference) 4G062 AA04 BB01 BB05 BB20 DA06 DA07 DB01 DB02 DB03 DC03 DC04 DD01 DE01 DE02 DF01 DF02 DF03 EA01 EA02 EA03 EA10 EB01 EB02 EB03 EB04 EC01 EC02 EC03 EC04 ED01 ED02 EF01 ED02 FA01 FA10 FB01 FB02 FC01 FD01 FE01 FF01 FG01 FG02 FH01 FJ01 FK01 FL01 GA01 GA10 GB01 GC01 GD01 GE01 HH01 HH03 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 HAJ JJ03 JJ10 KK10 JJ05 KK10 JJ05 KK10 JJ05 JJ10 KK
Claims (3)
çœé補ç°ç©ãå®è³ªçã«å«ãŸãªãããå«ãã§ãç²ååŸãïŒ
ÎŒïœä»¥äžã®çœé補ç°ç©ã®å«æéãïŒïŒã±ïŒïŒïŒïŒïœïœä»¥
äžã®ã¬ã©ã¹ã§ããããšãç¹åŸŽãšããåå°äœããã±ãŒãžçš
ã«ããŒã¬ã©ã¹ã(1) The composition contains platinum, but contains substantially no platinum foreign matter having a particle size of 2 ÎŒm or more, or has a particle size of 2
A cover glass for a semiconductor package, which is a glass having a content of platinum foreign matter having a size of not less than 10 ÎŒm and not more than 10/100 ml.
é ïŒã«èšèŒã®åå°äœããã±ãŒãžçšã«ããŒã¬ã©ã¹ã2. The cover glass for a semiconductor package according to claim 1, wherein said glass is borosilicate glass.
çšã«ããŒã¬ã©ã¹ãè£ çããŠãªãåºäœæ®åçŽ åã3. A solid-state imaging device comprising the semiconductor package cover glass according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2002136521A JP2002348142A (en) | 2002-05-13 | 2002-05-13 | Cover glass for semiconductor package and solid-state imaging element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002136521A JP2002348142A (en) | 2002-05-13 | 2002-05-13 | Cover glass for semiconductor package and solid-state imaging element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2001367392A Division JP3386058B2 (en) | 2001-11-30 | 2001-11-30 | Cover glass for semiconductor package and method of manufacturing the same |
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| JP2002348142A true JP2002348142A (en) | 2002-12-04 |
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| JP2002136521A Pending JP2002348142A (en) | 2002-05-13 | 2002-05-13 | Cover glass for semiconductor package and solid-state imaging element |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005008509A (en) * | 2003-05-29 | 2005-01-13 | Nippon Electric Glass Co Ltd | Cover glass for optical semiconductor package, and its production method |
| JP2007302858A (en) * | 2006-04-11 | 2007-11-22 | Nippon Electric Glass Co Ltd | Luminescent color-shifting material and luminescent color-shifting member |
| CN104591539A (en) * | 2015-01-29 | 2015-05-06 | äžåœå»ºçææç§åŠç ç©¶æ»é¢ | Borosilicate glass with high transmittance at far ultraviolet band and preparation method thereof |
-
2002
- 2002-05-13 JP JP2002136521A patent/JP2002348142A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005008509A (en) * | 2003-05-29 | 2005-01-13 | Nippon Electric Glass Co Ltd | Cover glass for optical semiconductor package, and its production method |
| JP2007302858A (en) * | 2006-04-11 | 2007-11-22 | Nippon Electric Glass Co Ltd | Luminescent color-shifting material and luminescent color-shifting member |
| CN104591539A (en) * | 2015-01-29 | 2015-05-06 | äžåœå»ºçææç§åŠç ç©¶æ»é¢ | Borosilicate glass with high transmittance at far ultraviolet band and preparation method thereof |
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