JP2002344005A - Photoelectric sensor device and method of manufacturing the same - Google Patents

Abstract

(57) [Summary] [Problem] A light beam of a light emitting diode is accurately and widely received by a light receiving element, sensitivity and accuracy of the reaction can be increased, and there is a risk that leads of the light emitting element and the light receiving element come into contact with each other. It is an object of the present invention to provide a photoelectric sensor device and a method of manufacturing the photoelectric sensor device, which have low reliability, improve product safety and a good product yield, and relatively reduce the complexity of an assembling process. SOLUTION: A light receiving element, first and second package bodies,
A light-emitting element and a sealed housing, wherein the light-receiving element is fixed on a first lead connection frame, and its positive and negative electrodes are respectively connected via leads to a corresponding second lead connection frame and a third lead connection frame. Connect to The first package is formed on and covers an outer peripheral surface of the light receiving element, and the light emitting element is fixed to a front surface of the package. The positive and negative electrodes are connected to the corresponding fifth lead connection frame and sixth lead connection frame via leads. The second package covers the light receiving element, the first package, the light emitting element, and all lead connection frame portions, and is further covered with a sealed housing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric sensor device and a method for manufacturing the same, and more particularly, to a photoelectric sensor device using a flat light emitting diode as a light emitting means, and the lead wires contact each other due to malfunction. The present invention relates to a light-receiving element that does not easily cause damage and that can effectively increase the light receiving area of the light receiving element.

[0002]

[Prior Art] Photo Coupler,
Photoelectric sensors, such as photoelectric detectors and photoelectric detectors, have a photoelectric signal transmission function using light as a medium, and are applied to computer control systems, optical cable communication, mice, or controllers, etc. to transmit data and coupling. It is used as a cutting unit. And
In the midst of social changes such as the spread of the information society and the spread of the Internet, its importance is increasing day by day. The factory of product manufacturing technology is given great importance in the industry. For example, Philips Lightbulb Company Taiwan Patent Publication No. 254484
The related arts are disclosed in, for example, No. “Photoelectric Coupler” and Publication No. 289804 of Motorola “Photoelectric Coupler Device”.

FIGS. 1A and 1B disclose a top view of a well-known photoelectric sensor and a cross-sectional view taken along the line AA. The photoelectric coupler, which is a photoelectric sensor, mainly includes a light emitting element (for example, a light emitting diode << LED >>) 13 and a light emitting element 13. 139 (fourth lead connection frame), which is a signal coupler constituted by the light receiving element 15 (for example, photodiode << PD >>), and both are two separate lead connection frames.
, 159 (first lead connection frame). The light emitting element 13 is connected to the sixth lead connection frame 137 by a frame connection line 135, and the positive and negative poles of the light receiving element 15 are connected to the second lead connection frame 1 by lead connection lines 153 and 155, respectively.
51 and the third lead connection frame 167. Further, when the signal line and the lead act on each other, an interference signal may be generated and affect the normal operation of the computer system. The light receiving element 15 and all lead connection lines 153, 155, and 135 are covered. When the light emitting element 13 emits light to act as a light source of the emitter, the light is irradiated toward the light receiving element 15 (indicated by a dotted arrow in the drawing).
When the light receiving element 15 receives the optical signal and generates the communication signal, the transmission operation as the optical sensor device is completed.

However, in the above-mentioned known photoelectric sensor device, the light receiving element 15 receives only the reflected light of the optical signal generated in the light emitting element 13. Accordingly, the light intensity and the sensitivity of the reaction are relatively reduced, which has a very unfavorable effect on photoelectric products that require high speed and accuracy.

[0005] In response to such a drawback, a technique relating to the second photoelectric sensor device has been developed in the industry. This is Figure 3
Is different from the first known structure in that the position of the light emitting element (light emitting diode) 23 in the fourth lead connection frame 239 is changed, and the light receiving element (PD) on the surface of the first lead connection frame 259 is changed. ) Is provided at a position extending in the longitudinal direction from 25). As a result, the light receiving area of the light receiving element 25 is enlarged, and an accurate and quick response is obtained. Thus, the disadvantages found in the first known technique can be improved. However, in this type of photoelectric sensor, the distance between the light emitting element 25 and the light receiving element 23 is too short.
The withstand voltage of an insulating substance such as a coating existing between them has become a very serious problem for the industry. This is because if the package is too thin, the withstand voltage and the insulation are easily lost, and interference occurs with each other. On the other hand, if the package is too thick, the light irradiation distance is easily increased, and the sensitivity is reduced. Therefore, how to adjust the distance of the thickness of the package becomes extremely important. Separately, since the distance is short, the isolating substance of the package body is formed after the light receiving element 15 and the light emitting element 13 reach a low position, and therefore, the leads 235 and 255 are accurately positioned at a predetermined position. It is difficult to determine whether or not the lead has been reached, the manufacturing process is extremely difficult, and if the user is slightly less careful, the leads may come into contact with each other and may be damaged.

Therefore, it is easy to control the height of the package body, it is excellent in withstand voltage, it is possible to guarantee that the lead reaches a predetermined position, and the light receiving range of the light receiving element is enlarged to increase the sensitivity. This is the long-awaited desire of users for how to design a photoelectric sensor device that can be used, and is the focus of the present invention. Based on many years of practical experience in research, development, and sales of photoelectric product element-related products, the inventor of the present invention exerts his or her personal expertise and conducts research and design from various fields, and As a result of a detailed study focusing on the theme, the photoelectric sensor device of the present invention and a method of manufacturing the same were successfully developed.

[0007]

SUMMARY OF THE INVENTION The present invention relates to a package in which a flat type light emitting diode is directly covered with a light receiving element and its lead by utilizing the characteristic that both plus and minus poles of a flat type light emitting diode are located on the same plane. A photoelectric sensor device that can increase the sensitivity and accuracy of the reaction by being fixed to the surface of the body so that the light beam when the light emitting diode emits light as a light source is accurately and widely received by the light receiving element. And a method for producing the same.

Further, according to the present invention, before mounting the light emitting element, the light receiving element and the lead are covered with the package first, whereby the risk of the light emitting element lead and the light receiving element lead being erroneously contacted. Therefore, an object of the present invention is to provide a photoelectric sensor device and a method for manufacturing the same, which can increase product safety and the yield of non-defective products.

Further, according to the present invention, when the light emitting element is fixed, the light emitting element can easily reach a predetermined position and the height of the position can be easily controlled, so that the complexity of the assembling process is relatively reduced. It is an object of the present invention to provide a photoelectric sensor device and a method of manufacturing the same.

Further, according to the present invention, the height of the package can be adjusted based on the range in which the light source of the light emitting element required for design works, and therefore, the range in which the photoelectric sensor device is used is wide. It is an object of the present invention to provide a photoelectric sensor device which can be selected and can reduce complexity in designing a product, and a method for manufacturing the photoelectric sensor device.

[0011]

A photoelectric sensor device according to the present invention includes a light receiving element, a first package, a second package, a light emitting element, and a sealed housing, wherein the light receiving element has a first lead. Fixed on the connection frame,
The positive and negative poles are respectively connected to the corresponding second lead connection frame and the third lead connection frame via leads. The first package is formed on and covers an outer peripheral surface of the light receiving element, and the light emitting element is fixed to a front surface of the package. The positive and negative poles are connected to the corresponding fifth lead connection frame and sixth lead connection frame via leads, respectively. The second package covers the light receiving element, the first package, the light emitting element, and the frame body of all lead connection frame parts,
The package, the light emitting element, and all parts of the lead connection frame are covered with a sealed housing.

The method for manufacturing the photoelectric sensor device includes the following steps (a) to (f). That is, in the step (a), the light receiving element is fixed on the first lead connection frame, and the positive and negative poles of the light receiving element are respectively connected via the leads to the corresponding second lead connection frame and the third lead. Connect to the connection frame. In the step (b), a package is formed on the outer peripheral surface of the light receiving element. In the step (c), the light emitting element is fixed to the front surface of the package. In the step (d), the positive and negative electrodes of the light emitting element are connected to the corresponding fifth lead connection frame and sixth lead connection frame via leads. In the step (e), the second
Forming a package body, the light receiving element, a fixing layer,
In the step (f), the light-emitting element and the frame body of all the lead connection frame parts are covered, and in the step (f), the light-receiving element, the package, the light-emitting element, and the frame body of all the lead connection frame parts are sealed. Is coated.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to explain the features and effects of the present invention, a specific embodiment will be described below with reference to the drawings.

[0014]

First Embodiment FIGS. 3A to 3E and FIG. 4 are cross-sectional views showing steps of respective manufacturing steps in a preferred embodiment of the present invention (an example is a cross section taken along line BB in FIG. 4). FIG. 4 discloses a top view of the structure in a completed manufacturing state. As disclosed in the drawings, in the embodiment of the present invention, the light receiving element 35 (PD) is fixed on the first lead connection frame 359. The positive and negative poles are connected to the corresponding second lead connection frame 351 and third lead connection frame 357 by the leads 353 and 355 (FIGS. 3A and 4).

Next, the light receiving element 35 and the lead 3 are mounted on the first package body 39 made of a polymerizable simple substance selected from epoxy resin, ethylene azolactone, glass, methyl propylene ester, urea and the like.
53, 355 are covered to achieve the function of isolation protection. The height H1 of the first package body 39 can be easily adjusted according to actual needs as disclosed in FIG. 3B.

The light emitting element 33 is fixed to the front surface of the first package body 39. Preferably, as shown in FIG. 3C, it is provided at a position extending in the vertical direction and perpendicular to the light receiving element 35. An important point of the present invention is that a planar light emitting diode is used as the light emitting element 33. Its characteristic is that both positive and negative poles are on the same plane,
They are welded to the leads 333 and 335, respectively. A substrate 334 mainly made of a material such as gallium arsenide (GaAs) or gallium phosphide (GaP), and a light emitting diode epitaxy layer (epitax) on the upper surface of the substrate 334
y layer) 332.

Next, as shown in FIG. 3D, both positive and negative leads 333 and 335 of the light emitting element 33 are provided.
And a fifth lead connection frame 351 and a sixth lead connection frame 337 which are opposed to the second lead connection frame 351 and the third lead connection frame 357 with a space therebetween to complete electrical connection. These are further covered with a second package body 37. For this reason, the leads are connected to each other by being stretched on the lead connection frames at the four corners, and the possibility that the leads approach each other and interfere with each other is reduced.

Next, as shown in FIG. 3E, the light receiving element 35, the package body 39, the light emitting element 33, and all the frame bodies having the lead connection frame part are covered by using the sealed housing 31. Therefore, it is possible to improve a disadvantage that an interference signal is generated when the lead acts, which may affect a normal function of the work system.

The light emitting diode epitaxy layer 332 of the light emitting element 33 includes a fifth lead connection frame 331 and a sixth lead connection frame 331.
When electrically connected to a power supply via a lead connection frame 337 and the power supply is energized to emit light to illuminate a light source, light from the back surface irradiating toward the substrate at the PN contact surface is connected to the substrate 334. The light passes through the first package body 39 and is directly absorbed by the light receiving element 35 (disclosed by arrows in the figure). This is not the attenuated reflected light found in the known art. Therefore, the absorbed light source immediately generates a relatively sensitive reaction, thereby completing the effect of the photoelectric sensor device.

4 and 4A are top views of the present invention,
The bottom end of the light emitting portion of the flat light emitting diode 33 used in the present invention is disclosed in the
The light from the back surface, which faces the light emitting diode epitaxy layer 332 and faces the welding point (leads 335, 333)
), And is not affected by being separated from the lead 335. Therefore, the effect of sensitive responsiveness and accurate data transmission can be naturally increased. Further, the leads 333 and 335 of the light emitting element 33 are connected to the fifth lead connection frame 331 and the sixth lead connection frame 337 on the same side surface,
The leads 353 and 355 of the light receiving element 35 are connected to the second lead connection frame 351 and the third lead connection frame 357 on the same side surface as the first lead connection frame 359, and the connecting directions are different. In addition, the middle is isolated by a package 37. Thus, the possibility that a dangerous situation may occur due to accidental contact of the lead can be effectively reduced. Naturally, the first lead connection frame may be different from the second lead connection frame or the third lead connection frame depending on different modes of the light receiving element 35 to be combined.
The lead connection frame may be the same as the lead connection frame.

[0021]

Second Embodiment FIG. 5 discloses a second embodiment of the present invention. As disclosed in the drawing, the difference from the embodiment disclosed in FIG. 3E is that the height H2 of the package body 39 is higher than the height H1 disclosed in FIG. 3E. As is easily understood, the distribution range of the light source irradiated by the light emitting element 33 is further expanded. Therefore, with one light emitting element 33, a plurality of light receiving elements 35 can simultaneously receive similar signals and react at the same time. Therefore, the range of choices when practicing the present invention naturally expands, which brings benefits to the work in the design and manufacturing processes. The height of the package body 39 is adjusted according to the actual need for the distribution range of the light source and the adjustment of the irradiation distance.

[0022]

Third Embodiment FIGS. 6A to 6E and FIG. 4 disclose another embodiment of the present invention and each step in the manufacturing process thereof in a sectional view. As shown in FIG. 6A, first, the light receiving element 35 (PD) is fixed on the first lead connection frame 359. Next, a light emitting element 33 including a substrate 334 and a light emitting diode pitaxial layer 332 is prepared. As shown in FIG. 6B, a fixing layer 60 having adhesive properties is provided on the bottom surface of the substrate 334 of the light emitting element 33. Further, the light emitting element 33 and the fixing layer 60 are directly fixed vertically to the front surface of the light receiving element 36, and the leads 33 are disclosed as shown in FIG.
3, 335, 355 connect the respective electrodes on the opposing lead connection frames to complete the electrical connection. For this reason, the leads are similarly stretched and connected to the lead connection frames at the four corners, respectively, so that there is no danger of the leads being connected to each other by mistake and being damaged.

Next, as shown in FIG. 6E, the sealing and covering of the light receiving element 35, the fixing layer 60, the light emitting element 33, and the lead connection frame of all the lead portions are advanced using the sealed housing 31. This can prevent the possibility that the normal function of the work system is affected by the interference signal when the lead acts.
Also, the light emitting diode epitaxy layer 33 of the light emitting element 33
When the light source 2 irradiates the light source, the light from the back surface (indicated by the dotted line in the figure) similarly passes through the substrate 334 and the fixing layer 60, and is not affected by the welding point and the connection lead. And the signal transmission work between the two can be completed. Further, under such a structure, the light emitting element 33 is not limited to a planar light emitting diode, but is
May be used. Further, the fixing layer 60 having adhesive properties
Alternatively, the bottom layer of the light emitting element 33 may be fixed to the upper surface of the fixing layer 60 by first adhering the light receiving element 35 alone to the front surface.

[0024]

Fourth Embodiment FIG. 7 shows a cross-sectional view of another embodiment of the present invention. It can be seen from the drawing that in the fourth embodiment, the light emission blocking 73 is provided at a position extending above the light receiving element 75 separated by the package body 79. However, it is not the vertical direction. However, the light from the back surface irradiated by the light emitting element 73 only needs to be directly absorbed by the light receiving element 75, and the outer periphery of all the elements is further covered with the second package body 71. Further, the light receiving element 75 is a component element of the IC circuit 80 directly, or a detecting device, a microprocessor, a PC
Partial composition of the means for connecting to a means such as a B board or a chipset, or the lead connection frame thereof is an IC circuit, a chipset, a PCB board, one of microprocessors, or a combination thereof An element may be used, and the effect of the photoelectric sensor can be obtained similarly.

The above description relates to the preferred embodiment of the present invention and does not limit the scope of the present invention. The structure is not limited to, for example, only a visible light system, but can be applied to, for example, an infrared (Ir) transmission module. In other words, the package body and the fixing layer may be made of a material that transmits the wavelength of the spectrum emitted from the light emitting element according to actual different demands. Therefore, any modifications, changes, etc. equivalent to the shape, composition, features, and spirit thereof described in the claims of the present invention shall fall within the scope of the claims of the present invention.

[0026]

The photoelectric sensor device and the method for manufacturing the same according to the present invention are particularly applicable to a photoelectric sensor device using a planar light emitting diode as a light emitting element, in which the leads of the photoelectric sensor device are not damaged due to erroneous contact with each other. However, the effect can be accurately achieved by increasing the light receiving area of the light receiving element. That is, by utilizing the characteristic that both the positive and negative poles of the flat light emitting diode are located on the same plane, the flat light emitting diode is directly fixed to the surface of the package body covering the light receiving element and its lead, thereby obtaining the light emitting diode. The light source generated in the light receiving element is accurately and widely received by the light receiving element, and the sensitivity and accuracy of the reaction can be increased.

Further, according to the present invention, before mounting the light emitting element, the light receiving element and the lead are covered with the package beforehand, so that there is a danger that the light emitting element lead and the light receiving element lead may be erroneously contacted. Product safety and the rate of non-defective products.

Further, since the fixing position and the height of the light emitting element can be easily controlled, the complexity of the assembling process can be relatively reduced, and the light source of the light emitting element required for design can be operated. Since the height of the package body can be adjusted based on the range to be used, the range in which the photoelectric sensor device is used can be selected in a wide range, so that the design complexity of the product can be reduced.

[Brief description of the drawings]

FIGS. 1A and 1B are cross-sectional views showing a structure of a well-known photoelectric sensor device, and a cross-sectional view taken along line AA.

FIG. 2 is a cross-sectional view illustrating a structure of a second photoelectric sensor device according to a known technique.

3A to 3E are cross-sectional views showing steps of a manufacturing process according to the embodiment of the present invention.

4A and 4B are a top view showing a structure of a photoelectric sensor device according to the present invention, and a cross-sectional view in which a local portion of a cut surface of a BB line is enlarged.

FIG. 5 is a sectional view showing a structure of a second embodiment of the present invention.

6A to 6E are cross-sectional views illustrating steps of a manufacturing process according to a third embodiment of the present invention.

FIG. 7 is a sectional view showing a structure of a fourth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Housing 13 Light emitting element 135 Lead 137 Lead connecting frame 139 Lead connecting frame 15 Light receiving element 151 Lead connecting frame 153 Lead 155 Lead 157 Lead connecting frame 159 Lead connecting frame 17 Package body 23 Light emitting element 235 Lead 239 Lead connecting frame 25 Light receiving element 255 Lead 33 Light receiving element 331 Lead connection frame 332 Light emitting diode epitaxy layer 333 Lead 334 Substrate 335 Lead 337 Lead connection frame 339 Lead 35 Light receiving element 351 Lead connection frame 353 Lead 355 Lead 357 Lead connection frame 359 Lead connection frame 37 Second package body 39 First package body 60 Fixed layer 71 Second package body 73 Light emitting element 75 Reception Optical element 79 First package body 80 IC circuit

Continuing on the front page (72) Inventor So-Feng-Ru, No. 23, No. 23, No. 78, Takemitsu-ro, Taiwan, Hsinchu City, Taiwan. F-term (reference) 5F089 AB11 AC10 AC21 CA03

Claims (29)

[Claims] 1. A structure of a photoelectric sensor device, comprising: a light receiving element, a first package, a second package, a light emitting element, and a sealed housing, wherein the light receiving element is mounted on a first lead connection frame. The positive and negative poles are connected to the corresponding second lead connection frame and the third lead connection frame via leads, respectively, and the first package body fills the outer peripheral surface of the light receiving element. The second package body is covered with the light receiving element,
The first package body, the light emitting element, and the frame body of all the lead connection frame portions are covered, and the light emitting element is fixed to the front surface of the package body. The light receiving element, the package, the light emitting element, and all the parts of the lead connection frame are covered with a sealed housing to be connected to the corresponding fifth lead connection frame and sixth lead connection frame. When the element emits light and becomes a light source, light emitted from the back surface passes through the package and is absorbed by the light receiving element. 2. The photoelectric sensor device according to claim 1, wherein a position where the light emitting element is fixed is located at a position extending vertically in a vertical direction from a position of the light receiving element. 3. The photoelectric sensor device according to claim 1, wherein the light emitting element is a planar light emitting diode in which both positive and negative poles are located on the same plane. 4. The photoelectric sensor device according to claim 1, wherein a material of the first package body is made of a material that transmits a wavelength of a spectrum irradiated by the light emitting element. 5. The second lead connection frame and the third lead connection frame are located on the same side surface in a sealed housing, and the five lead connection frame and the sixth lead connection frame are opposed to each other in the housing. The photoelectric sensor device according to claim 1, wherein the photoelectric sensor device is located on one side surface of the photoelectric sensor. 6. The photoelectric sensor device according to claim 1, wherein the thickness of the first package body is determined according to a distribution range of a light source to irradiate the light emitting device. 7. The photoelectric sensor device according to claim 1, wherein the first package body is made of a polymerizable simple substance. 8. The light emitting device according to claim 1, wherein the first package is a fixing layer provided on a bottom surface of the light emitting element and fixed directly to a front surface of the light receiving element together with the light emitting element. 2. The photoelectric sensor device according to 1. 9. The photoelectric sensor device according to claim 1, wherein the fixing layer is made of a material having an adhesive property. 10. The light emitting device according to claim 1, wherein the first package is a fixing layer having an adhesive property, and is first fixed to a front surface of the light receiving element, and further fixed to a bottom surface of the light emitting element from an upper surface. The photoelectric sensor device according to claim 1. 11. The photoelectric sensor device according to claim 1, wherein the fixing layer is made of a material that transmits a wavelength of a spectrum irradiated by the light emitting element. 12. The first lead connection frame includes a second lead connection frame.
The photoelectric sensor device according to claim 1, wherein the photoelectric sensor device is one of a lead connection frame and a third lead connection frame. 13. The light receiving device according to claim 1, wherein the light receiving device is directly connected to one selected from an IC circuit, a chip set, a PCB board, a microprocessor, or a combination thereof. 3. The photoelectric sensor device according to 1. 14. The lead wire connection frame is an IC circuit, a chipset, a PCB board, a microprocessor, or a part of elements constituting a combination thereof. 2. The photoelectric sensor device according to 1. 15. A method for manufacturing a photoelectric sensor device, wherein the manufacturing process includes the following steps (a) to (f). In the step (a), the light receiving element is connected to a first lead connection frame. And fixing both the positive and negative poles of the light receiving element to the corresponding second lead connection frame and the third lead connection frame via leads, and in the step (b), the first package Forming a body on the outer peripheral surface of the light receiving element; (c)
In step (d), the light emitting element is fixed to the front surface of the first package body. In step (d), the positive and negative electrodes of the light emitting element are connected to the corresponding fifth lead via leads. In the step (e), a second package body is further formed, and the light receiving element, the fixing layer, the light emitting element, and all the lead connection frame parts are connected to the frame and the sixth lead connection frame. In the photoelectric sensor, the light receiving element, the package, the light emitting element, and the frame body of all lead connection frame portions are covered with a sealed housing in the step (f). Device manufacturing method. 16. The method according to claim 16, wherein the light emitting element in the step (c) is a planar light emitting diode in which both positive and negative electrodes are located on the same plane. 17. The method according to claim 15, wherein the thickness of the first package body in the step (b) is determined by a distribution range of a light source to irradiate the light emitting element. 18. The package according to claim 1, wherein the package in the step (b) is made of a material that transmits a wavelength of a spectrum irradiated by the light emitting element.
6. The method for manufacturing the photoelectric sensor device according to 5. 19. The method according to claim 15, wherein the position at which the light emitting element is fixed in the step (c) is a position extending vertically in the vertical direction from the position of the light receiving element.
3. The method for manufacturing a photoelectric sensor device according to item 1. 20. Each of the lead connection frames in the step (a) and the step (d) is an IC
The method according to claim 15, wherein the photoelectric sensor device is a part of a circuit, a chipset, a PCB board, a microprocessor, or a combination thereof. 21. A method for manufacturing a photoelectric sensor device, wherein the manufacturing process includes the following steps (a) to (d). In the step (a), the light receiving element is connected to a first lead connection frame. A light emitting device having a fixed layer provided on the bottom surface is prepared. (C) The fixed layer and the light emitting layer are fixed together on the front surface of the light receiving device. The positive and negative poles of the light emitting element are connected to the corresponding fifth lead connection frame and the sixth lead connection frame, respectively, and the positive and negative poles of the light receiving element are connected to the corresponding fifth and sixth lead connection frames, respectively. A method for manufacturing a photoelectric sensor device, wherein the photoelectric sensor device is connected to a second lead connection frame and a third lead connection frame. 22. The method for manufacturing a photoelectric sensor device according to claim 21, wherein the light emitting element in the step (d) is a flat type light emitting diode having both positive and negative electrodes. 23. In the method for manufacturing a photoelectric sensor device, after the step (d), the light receiving element, the package, the light emitting element, and the frame body of all lead connection frame portions are further covered with a sealed housing. 22. The method according to claim 21, further comprising the step of: 24. The photoelectric sensor according to claim 21, wherein the fixing layer in the step (d) is made of a material having an adhesive property, and is provided directly between the light emitting element and the light receiving element. Manufacturing method. 25. The step (b) is a step of preparing a fixing layer having an adhesive property, and fixing the bottom surface of the fixing layer to the upper surface of the light-receiving element. 22. The method according to claim 21, further comprising fixing the light emitting element to a front surface of a fixing layer fixed to an upper surface of the light receiving element. 26. The method for manufacturing a photoelectric sensor device according to claim 21, wherein the fixing layer in the step (b) is made of a material that transmits a wavelength of a spectrum irradiated by the light emitting element. 27. The method for manufacturing a photoelectric sensor device according to claim 21, wherein the thickness of the fixed layer in the step (b) is determined by a range of a light source to irradiate the light emitting element. 28. A second package body is further formed between the step (d) and the step (e),
22. The method for manufacturing a photoelectric sensor device according to claim 21, wherein the light receiving element, the fixing layer, the light emitting element, and a frame body of all lead connection frame portions are covered. 29. Each of the lead connection frames in the steps (a) and (d) is an IC
22. The method according to claim 21, wherein the photoelectric sensor device is a part of a circuit, a chipset, a PCB board, a microprocessor, or a composition element of a combination thereof.