JP2002341376A - Liquid crystal display device, semiconductor element, substrate for semiconductor element, and coated metal particles for semiconductor element wiring - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid crystal display device in which wastefulness of materials is small and which can be manufactured efficiently, a semiconductor element, a substrate for semiconductor element, a coated metal grain for wiring semiconductor element. SOLUTION: In a semiconductor element 30 which includes a gate electrode 33, a gate insulating film 35, a semiconductor layer 37, a source and drain electrode 39 and a transparent electrode (pixel electrode) 43 on a transparent substrate 31, the gate electrode 33 is formed with printing by an electrophotographic method. Moreover, metal grains coated with thermoplastic resin are used as toner in the electrophotographic method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display, a semiconductor device, a substrate for a semiconductor device, and coated metal particles for a semiconductor device wiring.

[0002]

2. Description of the Related Art TFT-LCDs have become the mainstream display devices for portable personal computers, laptop personal computers, televisions, and the like in view of display performance and energy saving.

Various methods have been studied for the manufacture of a TFT-LCD, but the manufacturing process of a TFT array as a semiconductor element is complicated, and a vacuum apparatus (sputtering apparatus) is used.
A sputtering process of forming various kinds of metals and metal oxides for electrodes by using a method, a pattern processing process of patterning an electrode pattern by a photolithography method, and the like are performed.

In the conventional manufacturing process of a TFT array, the gate electrode and the source / drain electrodes are made of Cr or Ta.
A TFT using a metal mainly made of metal such as W which is easy to be metal-processed or a wiring mainly made of aluminum having a low electric resistance has been proposed, and the above-described sputtering process, pattern processing process, and the like are performed as a forming process thereof.

However, each of these steps is performed through complicated steps, and in particular, in the pattern processing step, it is necessary to repeatedly perform steps such as resist coating, exposure, etching, and resist peeling. Therefore, in the manufacturing process of the TFT array, simplification of these processes has been required.

Further, in each of these steps, a vacuum device is used, and heating and cooling are repeated, so that a large amount of energy is consumed, and most of the material is dissolved and removed in the etching step, so that the utilization efficiency of the material is increased. Therefore, there has been a demand for a process of manufacturing a TFT array which has excellent material use efficiency and reduced energy consumption. Therefore, it has been desired to manufacture a TFT array that is inexpensive, energy-saving, and has a high material utilization efficiency, and a TFT-LCD having such a TFT array more efficiently.

On the other hand, JP-A-59-189617,
JP-A-59-202682, JP-A-60-137
886 and JP-A-60-160690 describe that an electrode pattern of conductive particles is formed by electrophotography and then fired. However, since the conductive particles used in the above publication have low resistance and charge is likely to leak, it is difficult to print a highly accurate electrode pattern,
As a result, there is a problem that it is difficult to form a reliable conduction path.

In order to solve the above problems, Japanese Patent Application Laid-Open No. H10-041066 discloses that carrier particles are
A method of forming a conductive pattern on a ceramic green sheet by electrophotography using a developer comprising insulated surface-treated metal particles is disclosed. However, the above publication does not disclose anything about forming a conductive pattern on a material other than the ceramic green sheet, for example, a glass substrate used for a semiconductor element.

[0009]

Accordingly, as a result of diligent research, an electrode wiring pattern was formed on a transparent substrate by electrophotographic printing using conductive metal particles coated with a thermoplastic resin. The present inventors have found that the above-described problems can be solved by heating the thermoplastic resin at a specific temperature to evaporate the thermoplastic resin by thermal decomposition and expressing conductivity in the wiring portion.

That is, an object of the present invention is to provide a liquid crystal display device, a semiconductor element, a substrate for a semiconductor element, and a coated metal particle for a semiconductor element wiring which can be manufactured efficiently with little waste of material.

[0011]

According to the present invention, there is provided a liquid crystal display device including a semiconductor element having a gate electrode formed on a transparent substrate by electrophotographic printing.

According to another aspect of the present invention, there is provided a semiconductor device wherein a gate electrode is formed on a transparent substrate by electrophotographic printing.

According to still another aspect of the present invention, there is provided a substrate for a semiconductor device, wherein a gate electrode is formed on a transparent substrate by electrophotographic printing.

In the above-described liquid crystal display device, semiconductor element, and semiconductor element substrate, the gate electrode is formed by printing by electrophotography, so that the gate electrode has a target width of, for example, three.
Fine wiring having a thickness of about 50 μm to about 50 μm, preferably about 5 to 30 μm, and a thickness of about 0.05 to 1 μm can be accurately formed. Therefore, it is possible to cope with higher precision and narrower pitch of the semiconductor element. In addition, in the printing by the electrophotographic method, the waste of the material is small and a large amount of labor is not required. Furthermore, it is possible to cope with many kinds of small quantities.

According to still another aspect of the present invention, there is provided a semiconductor device wiring for use in electrophotography, wherein a surface of a metal particle having a particle size of 0.1 to 20 μm is coated with a thermoplastic resin. A coated metal particle is provided. By coating the metal particles with a thermoplastic resin, the coated metal particles can be insulated and can be used as a toner in electrophotography.

Further, in the coated metal particles for semiconductor element wiring of the present invention, it is preferable that the thermoplastic resin is a polyolefin resin. When the thermoplastic resin is a polyolefin-based resin, it is possible to prevent adhesion in a developing machine and spent carrier.

In the coated metal particles for semiconductor element wiring according to the present invention, it is preferable that the thermoplastic resin is formed by carrying a catalyst on the surface of the metal particles and directly polymerizing an olefin monomer. . By forming the thermoplastic resin by direct polymerization, it is possible to uniformly coat the metal particles. Further, the thickness of the coating layer can be arbitrarily changed.

Further, in the coated metal particles for semiconductor element wiring of the present invention, the metal particles may be composed of Sn, Ag, Pb, B
i, Cu, In, Ni, Zn, W, Ta, Mo, Al,
It is preferable that the metal is a metal composed of one kind of element selected from Au and Cr or an alloy composed of two or more kinds of elements.
Such a metal or alloy is preferable in terms of resistance, workability, cost, and the like, and particularly, Ag and Cu are preferable.

[0019]

BEST MODE FOR CARRYING OUT THE INVENTION The coated metal particles for semiconductor element wiring (hereinafter referred to as coated metal particles) of the present invention and a liquid crystal display device using the same will be further described below. The coated metal particles of the present invention include metal particles and a thermoplastic resin (resin coating layer) that covers the surface of the metal particles.

1. Metal particles (1) Type The type of metal particles is not particularly limited as long as it has conductivity. Such examples include Sn, Ag, P
b, Bi, Cu, In, Ni, Zn, W, Ta, Mo,
Examples include a metal composed of one kind of element selected from Al, Au and Cr, or an alloy composed of two or more kinds of elements. Among these, metals composed of one kind of element include Sn,
Ag, Pb, Cu, W, Ta and Mo are more preferred,
Ag and Cu are more preferred. Examples of alloys composed of two or more elements include W alloys such as WTa and MoW,
Alloys such as alloys, solders and Pb-free solders are preferred.

(2) Shape and Particle Size The shape of the metal particles is not particularly limited, and may be any of a spherical shape and an irregular shape. Among these shapes, a spherical shape (for example, a uniform true sphere) is preferable. The particle size of the metal particles is preferably 0.1 to 20 μm. The reason for this is
When the particle size is less than 0.1 μm, aggregation of metal particles is likely to occur when coating the thermoplastic resin, and toner scattering occurs when printing is performed using the coated metal particles as an electrophotographic toner. This is because it is easy to cause the deterioration of the print image quality. In addition, the particle size is 20 μm
If the ratio exceeds the above range, it becomes difficult to use the toner as an electrophotographic toner, so that the image quality of a printed image deteriorates, and it may become impossible to manufacture electrode wirings with high accuracy. Further, for such a reason, the particle size of the metal particles is more preferably 0.2 to 10 μm, and 3 to 6 μm.
m is particularly preferable.

(3) Composition Ratio It is preferable that the composition ratio of the metal particles is 80% by weight or more when the whole of the coated metal particles is 100% by weight. The reason is that when the composition ratio is less than 80% by weight,
Even if the coating layer is too thick and the electrode wiring is actually printed,
This is because there is a case where conduction after removing the resin by heating cannot be sufficiently obtained due to lack of filling properties of the metal particles. Further, since the fluidity decreases with an increase in the bulk density, the fluidity of the developer obtained by mixing with the carrier similarly decreases, and the stability during development may be significantly impaired. is there. Further, for such a reason, it is more preferable that the composition ratio of the metal particles is 90% by weight or more when the whole of the coated metal particles is 100% by weight.

The upper limit of the composition ratio of the metal particles is not particularly limited as long as the resin coating layer can completely cover the surface of the metal particles. If the ratio of the metal particles is too large, the resin coating layer cannot completely cover the surface of the metal particles, which is not preferable because insulation failure occurs and a printed image deteriorates. The upper limit of the composition ratio varies depending on the specific gravity of the metal particles used, physical properties such as surface shape, particle size, and the like. Further, this composition ratio indirectly defines the thickness of the resin coating layer in the coated metal particles of the present invention.

2. Thermoplastic resin (1) Type The type of thermoplastic resin is not particularly limited. Examples of such a resin include an acrylic resin and a polyolefin resin. Among these, a polyolefin resin is particularly preferred, and a polyethylene resin which can be directly polymerized on the surface of the metal particles is more preferred. These thermoplastic resins are thermally decomposed and disappear in the firing process after printing the electrode wiring, so that the electrode wiring after firing is given conductivity.

(2) Molecular Weight When the thermoplastic resin is a polyolefin resin, the polyolefin resin layer is preferably formed by directly polymerizing a high molecular weight polyolefin on the surface of metal particles. This high molecular weight polyolefin has a molecular weight range of 2,000 or more as a number average molecular weight and 10,10 as a weight average molecular weight.
000 or more are preferred. These are polyethylene wax (Mitsui High Wax (manufactured by Mitsui Petrochemical), Sunwax (manufactured by Sanyo Chemical), Polylet (manufactured by Chusei Wax Polymer Co.), and Dialen 30 (manufactured by Mitsubishi Chemical Corporation), which are known as low molecular weight polyethylene. Nippon Oil Co., Ltd., Neowax (Yasuhara Chemical Co., Ltd.), AC polyethylene (Allied Chemical Co., Ltd.), Epolen (Eastman Kodak Co., Ltd.),
Hoechst wax (manufactured by Hoechst), A-Wax (BA
SF), polywax (Petrolite), and Escomer (Exxon Chemical).
Polyethylene wax can be coated by ordinary dipping or spraying by dissolving it in hot toluene, etc. Since it is peeled off from the surface, it is distinguished from the polyolefin resin layer used in the present invention.

(3) Coating Amount The coating amount of the thermoplastic resin is preferably such that the weight ratio is [metal particles] / [thermoplastic resin] = 99/1 to 80/20, more preferably 97 / 3-90 /
It is 10.

3. Method for Producing Coated Metal Particles (1) Method for Polymerizing Thermoplastic Resin into Metal Particles The resin coating layer is obtained, for example, by treating the surface of the metal particles with an olefin polymerization catalyst and polymerizing (forming) olefin monomers directly on the surface. It is formed by doing. Examples of such a polymerization method include the methods described in JP-A-60-106808 and JP-A-60-106810. That is, the polyolefin resin coating layer is obtained by previously contacting a highly active catalyst component containing titanium and / or zirconium and soluble in a hydrocarbon solvent (eg, hexane, heptane, etc.) with the metal particles. The resulting product and the organoaluminum compound can be formed by suspending in the above-mentioned hydrocarbon solvent, supplying an olefin monomer thereto, and directly polymerizing on the surface of the metal particles. According to this production method, the resin coating layer is formed directly on the surface of the metal particles, so that the resulting coating has excellent strength.
Further, when the resin coating layer is formed by direct polymerization, the coating layer becomes uniform, and the film thickness can be arbitrarily changed by changing the amount of olefin to be introduced.

(2) Smoothing Treatment In order to improve the filling rate of the wiring portion during printing, the coated metal particles of the present invention can be subjected to a smoothing treatment for improving the bulk density. As this method, an optimal method can be selected from the following methods.

(A) Smoothing treatment by ball milling For example, an appropriate amount of coated metal particles is put in a 500 ml plastic container, and at the same time, a ceramic ball having a diameter of about 10 times is put and rotated by a ball mill for several tens of minutes. After the treatment, the ceramic balls are removed by using a sieve whose opening is sufficiently smaller than the diameter of the ceramic balls, and at the same time, coated metal particles which have been smoothed are obtained.

(B) Smoothing by Mixer Treatment For example, using a mixer such as a Henschel mixer (Mitsui Mining Co., Ltd.) or a mechanomill (Okada Seiko Co., Ltd.), the number of rotations is set to several tens of minutes so that the coated metal particles are not deformed. By performing the intermediate treatment, the coated metal particles subjected to the smoothing treatment are obtained.

(C) Smoothing treatment by heat treatment For example, using a thermal sphering machine (thermal sphering machine, manufactured by Hosokawa Micron Co., Ltd.), rapid heating to a temperature higher than the melting point of polyethylene in a state of being dispersed in an air stream, By cooling, the coated metal particles are smoothed without agglomeration.

(D) Smoothing treatment by collision For example, using a jet mill (counter-jet mill, manufactured by Hosokawa Micron) or a hybridizer (hybridization, manufactured by Nara Machinery Co., Ltd.), the coated metal particles collide with each other or rotate. To obtain coated metal particles that have been smoothed.

(3) Method for crushing aggregates The coated metal particles produced by direct surface polymerization are filtered,
Form very weak agglomerates (disintegrable with fingers) on drying. As a method of crushing the aggregates, in addition to the above-described smoothing treatment, a vibration sieve method using a sieve having an opening of 125 μm or less can be used. Other than these, there is no particular limitation as long as a method such as a ribbon mixer or a Nauter mixer can apply a shear (such as shear stress) to the particles.

4. Insulation Characteristics and Bulk Density Characteristics of Coated Metal Particles (1) Insulation Characteristics In order to form a developer using the coated metal particles of the present invention and print electrode wiring by an electrophotographic method, the coated metal particles have a predetermined charge amount. It is necessary to have. In the present invention,
The metal particles are completely covered. Further, the insulating property can be improved by increasing the amount of the thermoplastic resin to be coated.

The resistance value of the coated metal particles produced by the above method is at a level that cannot be measured by ordinary powder resistance measurement methods. The measuring method of the resistance value is as follows: electrode area 5 cm ² , load 1
A coated metal particle layer having a thickness of 0.5 cm was provided for each kg, a voltage of 1 to 500 V was applied to the upper and lower electrodes, and a current value flowing to the bottom was measured and converted. Ammeter measurement limit is 1
pA, and a current value smaller than this cannot be measured.
All of the coated metal particles in the present invention could not be measured.

(2) Bulk Density The electrode wiring is printed by electrophotography, and then the thermoplastic resin is decomposed and sintered by heating and baking to produce a plasma display substrate. Filling is required. In addition, at the time of temporary attachment after printing, since the coating resin existing on the surface is fixed as a binder, the required amount varies depending on the particle size and the like, but an appropriate amount of resin is required.

The bulk density of the coated metal particles obtained in the present invention is about 1.0 to 8.5 g / cc, and varies depending on the particle size and the type of metal. This bulk density can be further improved by performing the smoothing treatment. Bulk density is closely related to fluidity, and improving the bulk density also improves fluidity when used as a developer.

5. Coated metal particle-containing developer (1) Carrier used for developer When printing electrode wiring by electrophotography, one-component system
Either the 1.5-component system or the two-component system can be used. However, from the viewpoint of charging characteristics and developability, a two-component system in which the developer is mixed with a carrier is more preferable. As the carrier used at this time, in addition to generally known magnetic powders such as ferrite, magnetite, and iron powder, a resin-coated carrier obtained by coating these with a resin, or a binder-type carrier obtained by adding a magnetic powder to a resin. Any of polymer-coated carriers obtained by directly polymerizing on the surface of a magnetic powder can be suitably used.

(2) Composition Ratio of Developer When the coated metal particles of the present invention are used as a two-component developer, the composition ratio of the coated metal particles is determined by the density of the coated metal particles in a general toner used for copying and printers. 5-1
Since it is about 0 times, it is necessary to mix the toner and the carrier at a composition ratio of 10 to 400% by weight with respect to a composition ratio of 2 to 40% by weight.

6. Printing equipment and printing method (1) Printing equipment When printing electrode wiring with the coated metal particles of the present invention,
The developer must be prepared by the above-described method, but the equipment for printing is not particularly limited. In addition to commercially available printers and copiers, all equipment capable of obtaining images by an electrophotographic method such as an on-demand printing machine can be used. Can be used. At this time, the polarity of the toner (coated metal particles) changes to positive charge or negative charge depending on the difference between the amorphous silicon photoreceptor and the organic photoreceptor in the equipment system. It can be used by selecting the type of charging roller. Further, it is necessary to make improvements such as securing a space at the time of transfer depending on the thickness of the glass substrate and the like. Furthermore, it is necessary to prevent the surface of the glass substrate transfer system from being soiled and to prevent distortion during transfer.

(2) Printing Method As the printing method, any of the one-component developing method, the 1.5-component developing method, and the two-component developing method can be used as described above in the case of an electrophotographic method. When data is sent directly from a computer and printed, such as with a printer, an electrode wiring diagram may be created using a computer in advance, and the required number of copies may be printed. By selecting this method, the same metal wiring can always be obtained.
As in the case of manufacturing by a photoresist method, problems such as high cost (a large cost is required for manufacturing a screen in a photoresist process and screen printing) and stability do not occur.

7. Liquid crystal display device and semiconductor element In the liquid crystal display device and the semiconductor element of the present invention, the gate electrode is formed by printing by electrophotography, but the other components are not particularly limited, and have a normal configuration and material. It can be formed by a method.

[Embodiment 1] FIG. 1 is a schematic view showing an embodiment of the liquid crystal display device of the present invention. Liquid crystal display device 1
Has an X electrode and a Y electrode provided on two glass panels (not shown) sandwiching a liquid crystal layer (not shown). X
At the intersection of the electrode and the Y electrode, the driving semiconductor element 10 and the pixel 1
There are two. FIG. 2 is a cross-sectional view showing one embodiment of a semiconductor element used in the liquid crystal display device of FIG. Semiconductor element 30
In the above, a gate electrode 33, a gate insulating film 35, first and second semiconductor layers 37, a source / drain electrode 39, a source / drain insulating film 41, and a transparent electrode (pixel electrode) 43 are disposed on a glass substrate 31. Has been established. A method of manufacturing the semiconductor element 30 will be described. First, a gate electrode 33 is printed on a glass substrate 31 by electrophotography, as described later. Thereafter, the gate electrode glass substrate is heated to 500 to 600 ° C. to decompose and remove the coating resin and sinter the metal electrode. Next, the gate insulating film 35 is stacked, and the first and second semiconductor layers 37 are stacked. Further, after stacking the source / drain wiring electrodes 39, the upper portion of the gate electrode is removed by etching. Source / drain insulating film 4
After laminating 1, the transparent electrode 43 is provided to form a semiconductor element.

Next, a method of forming the gate electrode 26 by electrophotography will be described. FIG. 3 is a diagram showing an outline of an electrophotographic apparatus 50 for forming a gate electrode 33 using coated metal particles. The electrophotographic apparatus 50 is a normal electrophotographic apparatus, and a charging device 5 is provided around a photosensitive drum 52.
4. Image signal exposure device 56, developing device 58, transfer roll 6
0, a cleaning blade 64 and an overall exposure machine 66 are provided. There is a substrate 62 between the photosensitive drum 52 and the transfer roll 60. First, the rotating photosensitive drum 52
On top, an electrostatic latent image is obtained by using the charging device 54 and the image signal exposure device 56. Next, the coating metal particles are supplied from the developing device 58 in accordance with the electrostatic latent image to form an electrode wiring image. Further, the formed electrode wiring image is transferred onto the substrate 62 by using the transfer roll 60. After that, by heating, the assumed electrode wiring is formed. Further, the thermoplastic resin is decomposed by the elevated temperature sintering, and the coated metal particles are sintered. The coated metal particles that have not been transferred to the substrate 62 are removed using the cleaning blade 64.

[0045]

EXAMPLES First, a catalyst used for polymerizing a thermoplastic resin into metal particles was produced. [Production Example 1] (1) Preparation of titanium-containing catalyst component 200 ml of dehydrated n-heptane at room temperature and magnesium stearate 1 which had been previously depressurized (2 mmHg) at 120 ° C in a 500-ml flask purged with argon.
5 g (25 mmol) was added to form a slurry. After stirring, 0.44 g (2.3 mmol) of titanium tetrachloride was added dropwise.
The temperature was raised and the reaction was carried out under reflux for 1 hour to obtain a viscous transparent titanium-containing catalyst (active catalyst) solution.

(2) Evaluation of activity of titanium-containing catalyst component 400 ml of dehydrated hexane and 0.1 ml of triethylaluminum were placed in a 1-liter autoclave purged with argon.
8 mmol, 0.8 mmol of diethylaluminum chloride and 0.004 mmol of the titanium-containing catalyst obtained in the above (1) as titanium atoms were sampled and charged.
The temperature was raised to ° C. At this time, the internal pressure of the system was 1.5 kg / cm ²
G. Then, hydrogen was supplied and 5.5 kg / cm ²
After the pressure was increased to G, ethylene was continuously supplied so that the total pressure was maintained at 9.5 kg / cm ² G, and polymerization was carried out for 1 hour to obtain 70 g of a polymer. The polymerization activity is 365 kg /
g · Ti / Hr, and the MFR (1
Melt flowability at 90 ° C and load of 2.16 kg; JIS
K 7210) was 40.

Next, coated metal particles were produced using the catalyst produced in Production Example 1. [Example 1] Silver fine particles (manufactured by Dowa Mining Co., average particle size 3 µ
m) Add 250 g, raise the temperature to 80 ° C., and reduce the pressure for 1 hour (1
(0 mmHg) Drying was performed. Thereafter, the temperature was lowered to 40 ° C., 800 ml of dehydrated hexane was added, and stirring was started. Next, 2.5 mmol of diethylaluminum chloride and 0.025 mmol of the titanium-containing catalyst component produced in Production Example 1 as titanium atoms were added, and the reaction was carried out for 30 minutes. Thereafter, the temperature was raised to 90 ° C., and the internal pressure of the system was set to 4.3 kg /
Polymerization was carried out for 10 minutes (introduction stopped when 13.2 g of ethylene was introduced into the system in total) while continuously supplying ethylene so as to maintain the cm ² G, and a total amount of 263.2 g of polyethylene-coated silver fine particles was obtained. Obtained. The dried fine powder uniformly appeared gray, and it was observed by an electron microscope that the surface of the silver fine particles was thinly coated with polyethylene. When this composition was measured by TGA (thermal balance), the composition ratio of silver fine particles and polyethylene was 95: 5. The composition after filtration and drying was treated with a vibrating sieve having openings of 53 μm to obtain coated metal particles A.

Example 2 Coated metal particles B were obtained in the same manner as in Example 1 except that the silver fine particles were changed to copper fine particles (3 μm, manufactured by Dowa Mining Co., Ltd.).

Example 3 Coated metal particles C were obtained in the same manner as in Example 2, except that the particle size of the copper fine particles was changed from 3 μm to 6 μm.

Example 4 Coated metal particles D were obtained in the same manner as in Example 1 except that the silver fine particles were changed to In / Ag alloy fine particles (2 μm, manufactured by Vacuum Metallurgy Co., Ltd.).

[Example 5] The coated metal particles A were subjected to thermal sphering (Hosokawa Micron Co., Ltd .: thermal sphering machine) for 200 hours.
After heating and quenching at ℃, smooth coated metal particles E were obtained.

Example 6 The coated metal particles A were treated with a hybridizer (Nara Machinery Co., Ltd .: hybridization system) at 12,000 rpm for 10 minutes to obtain smooth coated metal particles F.

Example 7 Silver fine particles (manufactured by Dowa Mining Co., average particle size 3 μm) were placed in a universal mixing stirrer (manufactured by Dalton) 25
0 g, further add acetone solvent 500 ml and styrene / acrylic resin (MP5000, manufactured by Soken Chemical Co., Ltd.)
2.53 g was added, and the mixture was stirred until the acetone solvent was evaporated. Then, pulverized by a hybridizer, 53
Classification with a μm sieve was performed to obtain coated metal particles G.

[Comparative Example 1] Coated metal particles H were obtained in the same manner as in Example 7 except that the resin and the solvent were changed to a phenol resin of thermosetting resin (manufactured by Asahi Organic Materials Co., Ltd.) and methyl alcohol. .

Comparative Example 2 Coated metal particles I were obtained in the same manner as in Example 2, except that the particle size of the copper fine particles was changed from 3 μm to 25 μm.

Test Example 1 The coated metal particles A to I and the resin-coated carrier were mixed at a weight mixing ratio of 20: 100, and 0.7 wt% of hydrophobic silica was added to the weight of the coated metal particles and mixed. Thus, a developer was prepared. This developer is replaced with a commercially available printer (FS600, Kyocera Corporation) and printed on paper, PET film, glass, or polyimide base material, background fogging state, print density, fixing stability. And the sharpness of the fine line portion were evaluated. For background fog evaluation, the solid part of the print surface (the part that is not printed)
Was measured by Macbeth. The density of the printed portion was measured in the same manner. The fixing stability was evaluated in terms of the degree of peeling of the printed portion when rubbed by hand after printing and fixing in five stages (5 when peeling was not performed at all, and 1 when completely peeled). The fine line definition was measured using a test pattern. With respect to the coated metal particles A to G of the present invention, all of the substrates printed well, and the evaluation results for paper are shown in Table 1.

[0057]

[Table 1]

* 1: ○: No fogging is observed at all.
(Indistinguishable visually, measured value is equivalent to blank paper) Δ: Slight fog is observed. (Indistinguishable visually, measured value increased by 10% or more of blank paper) x: Fogging is observed. (It can be visually identified.) * 2: ○: No difference in density is observed. X: A density difference is observed. * 3: ：: Fine lines at 100 μm intervals are clear. ×: Fine lines at 100 μm intervals are unclear, and a contact portion is observed.

Test Example 2 The coated metal particles A to I and the resin-coated carrier were mixed at a weight mixing ratio of 20: 100, and 0.7 wt% of hydrophobic silica was added to the weight of the coated metal particles and mixed. Thus, a developer was prepared. After replacing this developer with a developer of a commercially available printer (FS600, manufactured by Kyocera Corporation), and printing a fine line of 100 μm width on glass,
It was assumed to be worn at 180 ° C., sintered at 600 ° C., and conduction was confirmed.

[0060]

[Table 2]

：: Confirmed continuity △: Significant increase in resistance although there was continuity ×: No continuity

[0062]

According to the present invention, it is possible to provide a liquid crystal display device, a semiconductor element, a substrate for a semiconductor element, and coated metal particles for a semiconductor element wiring which can be manufactured efficiently with little waste of material.

[Brief description of the drawings]

FIG. 1 is a schematic view showing one embodiment of a liquid crystal display device of the present invention.

FIG. 2 is a sectional view showing one embodiment of a semiconductor device of the present invention.

FIG. 3 is a diagram showing an outline of an electrophotographic apparatus for forming a gate electrode using the coated metal particles of the present invention.

[Explanation of symbols]

 Reference Signs List 1 liquid crystal display device 30 semiconductor element 31 glass substrate (transparent substrate) 33 gate electrode 62 substrate

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H092 JA37 KA15 MA13 NA27 PA06 4M104 AA09 BB02 BB04 BB05 BB08 BB09 BB13 BB16 BB17 BB18 CC05 DD31 DD78 GG20 HH20 5C094 AA43 AA44 BA03 BA43 CA19 DB01 FA04 EA04 EB04 EA04 EB04 FB15 GB10 JA08

Claims (7)

[Claims] 1. A liquid crystal display device comprising a semiconductor element in which a gate electrode is formed by electrophotography on a transparent substrate. 2. A semiconductor element, wherein a gate electrode is formed on a transparent substrate by electrophotographic printing. 3. A substrate for a semiconductor device, wherein a gate electrode is formed on a transparent substrate by electrophotographic printing. 4. A particle size of 0.1 to 2 used in electrophotography.
A coated metal particle for a semiconductor element wiring, wherein a surface of a metal particle of 0 μm is coated with a thermoplastic resin. 5. The coated metal particles for semiconductor element wiring according to claim 4, wherein the thermoplastic resin is a polyolefin resin. 6. The wiring according to claim 5, wherein the thermoplastic resin is formed by supporting a catalyst on the surface of the metal particles and directly polymerizing an olefin monomer. Coated metal particles. 7. The method according to claim 1, wherein the metal particles are Sn, Ag, Pb, B
i, Cu, In, Ni, Zn, W, Ta, Mo, Al,
The coated metal particle for a semiconductor element wiring according to any one of claims 4 to 6, wherein the metal is a metal composed of one kind of element selected from Au and Cr or an alloy composed of two or more kinds of elements.