JP2002232039A - Spin valve type giant magnetoresistive element, magnetoresistive magnetic head, and methods of manufacturing these - Google Patents

Abstract

(57) Abstract: In a spin valve type giant magnetoresistive element and a magnetic head, an insensitive area is reduced by the presence of a hard magnetic layer for applying a bias magnetic field applied to a free magnetic layer. In addition, the rotation of the magnetic field can be achieved with high sensitivity by a signal magnetic field from the outside, thereby improving sensitivity, avoiding output loss, improving output characteristics, and further improving reliability by improving the heat radiation effect. A first antiferromagnetic layer, a fixed magnetic layer joined to the first antiferromagnetic layer, and a nonmagnetic conductive layer.
And the free magnetic layer 4 whose magnetization direction is changed by the signal magnetic field
And a second antiferromagnetic layer 22 that is long-distance exchange-coupled to the free magnetic layer 4 via the nonmagnetic spacer layer 21. The direction of the axis of easy magnetization due to exchange coupling between the first antiferromagnetic layer 21 and the fixed magnetic layer joined thereto, and the long-distance exchange coupling between the second antiferromagnetic layer 22 and the free magnetic layer 4 The direction of the axis of easy magnetization by the magnetic field is set to be orthogonal to apply a predetermined bias magnetic field to the free magnetic layer 4 to reduce the influence of the application of the bias magnetic field by the high magnetic layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spin valve type giant magnetoresistive element, a magnetoresistive magnetic head, and a manufacturing method thereof.

[0002]

2. Description of the Related Art There is a magnetic sensor, for example, a reproducing magnetic head for reading information from a magnetic recording medium such as a hard disk, which utilizes a spin valve type giant magnetoresistive element (hereinafter referred to as an SV type GMR). This SV
In the type GMR, the effect of a change in resistivity due to the magnetization directions of the two magnetic layers is used. That is, the resistance shows the minimum value when the magnetization states of both magnetic layers are parallel, and shows the maximum value when the magnetization states are antiparallel. Generally, in this magnetic sensor, in the initial setting state, that is, in the state where no externally detected magnetic field is applied, the directions of magnetization of the two magnetic layers are set to be orthogonal to each other.

FIG. 14 shows a so-called bottom type SV GM.
1 is a schematic cross-sectional view of R5, showing a first antiferromagnetic layer 1;
, A fixed magnetic layer 2 bonded thereto, and a nonmagnetic conductive layer 3
And a free magnetic layer 4 whose magnetization direction changes according to a detection magnetic field to be detected, for example, a detection signal magnetic field. In this way, the magnetization state of one fixed magnetic layer 2 of the two magnetic layers is fixed in one direction by the exchange bias magnetic field generated by the junction with the antiferromagnetic layer 1. As described above, the free magnetic layer 4 of the other magnetic layer is induced to exhibit uniaxial magnetic anisotropy so as to be orthogonal to the magnetization direction of the fixed magnetic layer 2. However, the free magnetic layer 4 can freely rotate the magnetization by an externally detected magnetic field to be detected and change the direction of the magnetization.

Then, CPP (Current Perpedicular to
Plane) In the configuration, the thickness direction, that is, SV type G
A sense current Is for detecting a resistance change is supplied in the stacking direction of each layer constituting the MR5, and a CIP (Current in Plane) is applied.
In the configuration, the sense current Is flows in the direction along the film surface.

[0005] In the SV type GMR, the free magnetic layer 4 has a fixed magnetic layer as described above when no detection magnetic field is applied so that high sensitivity to the detection magnetic field can be obtained. Although it is induced by uniaxial magnetic anisotropy perpendicular to the magnetization direction, in order to avoid the generation of Barkhausen noise due to the generation of magnetic domains at the edges, both ends of the SV type GMR are sandwiched. In contrast to the free magnetic layer, the free magnetic layer 4 is formed into a single magnetic domain, and the direction of magnetization of the free magnetic layer 4 is adjusted in a state where no detection magnetic field is applied. The magnetized hard magnetic layer is arranged so as to be able to apply a stabilizing bias magnetic field that forms a single magnetic domain state due to magnetization along the plane direction of the free magnetic layer 4 and orthogonal to the magnetic layer.

FIG. 15A is a front view of a main part of a shield type magnetoresistive magnetic head using an SV type GMR having a CIP structure, viewed from a surface facing or facing a magnetic recording medium (hereinafter referred to as a front surface). . That is, in FIG. 15A, a detection magnetic field, that is, a signal magnetic field from the recording unit of the magnetic recording medium is introduced in a direction perpendicular to the paper surface. In this magnetic head, a lower gap layer 7 made of a non-magnetic layer having a required thickness is formed on a lower magnetic shield 6, and an SV type GMR 5 is formed thereon. , A hard magnetic layer 8 for applying the above-described stabilizing bias magnetic field H _B to the free magnetic layer of the SV type GMR 5, and the SV type GMR 5 is provided on the hard magnetic layer 8.
A pair of electrodes 9 for supplying a sense current to MR 5 is arranged. The upper gap layer 1 is entirely made of a nonmagnetic layer.
0 is formed thereon, and the upper magnetic shield 11 is formed thereon.

However, by arranging such a hard magnetic layer 8, the magnetic field strength at the end of the free magnetic layer adjacent to the hard magnetic layer 8, that is, facing or opposing is increased. The magnetization is
The detection magnetic field makes it difficult to rotate or is fixed, and the sensitivity distribution has a so-called non-sensing area Ns that shows no or almost no sensitivity at both ends as shown by a curve a in FIG. 15B. The width We becomes smaller than the so-called optical width W. Then, the insensitive area N
s increases as the bias magnetic field increases.

The presence of such a non-sensing region Ns lowers the sensitivity. For example, in the case of a CPP configuration in which the electrodes are arranged with the SV-type GMR sandwiched in the thickness direction and a current is supplied, the magnetoresistance is reduced. A shunt loss occurs in the insensitive area Ns that does not contribute to the effect, and an output loss occurs.

Further, as described above, the hard magnetic layer 8 has its residual magnetization Mr and its residual magnetization Mr in order to eliminate the generation of magnetic domains in the free magnetic layer 4 and to apply a stabilizing bias magnetic field of such a degree. The product of the thickness t _H and Mr × t _H is the amount of magnetization of the free magnetic layer 4, that is, the saturation magnetization Ms and the thickness t _H
It is required that the product Ms × t _F equal to or greater than the _F. The magnetic layer constituting the hard magnetic layer 8 is generally
Since the remanent magnetization Mr is low, the thickness t _H is large, that is, t _H > t _F. In order to select this thickness relationship, the thickness of the free magnetic layer may be reduced. In this case, the average of the electrons in the parallel state and the antiparallel state of the magnetization of the free magnetic layer and the magnetization of the fixed magnetic layer. Since the path difference in the free stroke becomes smaller, the magnetoresistance effect decreases.

On the contrary, when the thickness of the hard magnetic layer 8 is increased, when the electrode 9 is formed on the thick hard magnetic layer 8,
The step between the portion where the SV type GMR is formed and the layered portion of the hard magnetic layer 8 and the electrode 9 is large, the curvature due to the depression of the upper magnetic shield 11 becomes remarkable, and the interval between the magnetic shields 6 and 11 is uneven. Becomes In particular, in the CIP configuration, the half width of the output signal waveform becomes large, and the linear recording density decreases.

In order to avoid the occurrence of the above-mentioned remarkable curvature, the thickness of the electrode 9 must be reduced, but in this case, the electric resistance increases. In addition, since the hard magnetic layer 8 generally has a lower thermal conductivity than the electrode 9, reducing the thickness of the electrode 9 lowers the heat radiation effect and increases the temperature over a long period of use. The characteristics of the SV type GMR may be degraded or broken, and the reliability may be degraded.

On the other hand, the SV type GMR having the CPP structure is a tunnel type MR that similarly passes a sense current in a direction perpendicular to the film surface.
In comparison with the above, there is an advantage in that a sufficiently low resistance can be exhibited even if the size is reduced along with the increase in the recording density, and the disadvantage in the tunnel type MR that the MR ratio is reduced by increasing the applied voltage can be avoided. However,
As described above, in the SV type GMR of the CPP configuration, when the energizing current is increased, the induced magnetic field generated in the right-handed screw direction around the free magnetic layer due to the energization increases, and the detection magnetic field of the free magnetic layer is introduced. The magnetizations generated in the opposite directions on the front side and the opposite side are increased. Therefore, a large stabilizing bias magnetic field is required in order to set the magnetizations in the opposite directions to the above-described fixed directions. Such a large magnetic field,
It is difficult to apply by the above-described hard magnetic layer 8, and the above-mentioned drawbacks become more remarkable because a thicker hard magnetic layer is required.

[0013]

SUMMARY OF THE INVENTION The present invention relates to an SV type GM.
In the R and the magnetoresistive head using the R as a magnetic sensing portion, the above-mentioned insensitive area is reduced, and
In the entire region of the V-type GMR, the magnetization in a required direction is set stably, and the magnetization can be rotated with high sensitivity by an externally detected magnetic field, thereby improving sensitivity, avoiding output loss, and improving output characteristics. The reliability is improved by improving the heat radiation effect.

[0014]

An SV type GM according to the present invention
R represents a first antiferromagnetic layer, a fixed magnetic layer joined to the first antiferromagnetic layer, a nonmagnetic conductive layer, a free magnetic layer whose magnetization direction changes by a detection magnetic field, The layer has a second antiferromagnetic layer that is exchange-coupled over a long distance via a nonmagnetic spacer layer. The direction of the axis of easy magnetization due to exchange coupling between the first antiferromagnetic layer and the fixed magnetic layer joined thereto, and the magnetization due to the long-distance exchange coupling magnetic field between the second antiferromagnetic layer and the free magnetic layer Set so that the direction of the easy axis is orthogonal. In this specification, the term “orthogonal” ideally means orthogonal, but actually refers to an intersection in which the orthogonal component is the main direction including substantially orthogonal.

Further, in the magnetoresistive head according to the present invention, its magnetic sensing part is formed by the above-mentioned SV type G according to the present invention.
It has an MR configuration.

Further, the method of manufacturing an SV type GMR according to the present invention is characterized in that at least a material layer constituting the first antiferromagnetic layer and a fixed magnetic layer joined to the material layer constituting the first antiferromagnetic layer are provided. A nonmagnetic conductive layer, a free magnetic layer whose magnetization direction is changed by a detection magnetic field, and a material layer constituting a second antiferromagnetic layer which is exchange-coupled to the free magnetic layer via a nonmagnetic spacer layer for a long distance. And a first and second magnetic field application heat treatment steps. The direction of the anisotropy of the antiferromagnetic layer that fixes the magnetization of the fixed magnetic layer is determined by the first magnetic field application heat treatment, and the anisotropy of the free layer is induced again by the second magnetic field application heat treatment. To obtain the desired SV GMR.

In the method of manufacturing a magneto-resistance effect type magnetic head according to the present invention, the magnetic sensing portion is formed by the above-described method of manufacturing the SV type GMR.

The SV type GMR according to the present invention described above or the SV type GMR in the magnetic head may have a sense current of a CPP configuration orthogonal to the film surface or a CIP configuration along the film surface. it can.

In the above-described SV type GMR according to the present invention, the magnetization state in a predetermined direction is set in the fixed magnetic layer by the first antiferromagnetic layer, as in the related art. On the side, a second antiferromagnetic layer for long-distance exchange coupling with the free magnetic layer via the nonmagnetic spacer layer is provided. In the free magnetic layer, the rotation of the magnetization is suppressed by an external magnetic field detected by the SV type GMR. In the state where the detection external magnetic field is not applied, it is set to a direction perpendicular to the direction of the axis of easy magnetization of the fixed magnetic layer and the direction of introduction of the detection magnetic field. Apply a bias magnetic field.

The exchange coupling between the free magnetic layer and the second antiferromagnetic layer is, as described above, a long-distance exchange coupling with a nonmagnetic spacer layer interposed therebetween. The exchange coupling energy is selected, and in the free magnetic layer, as described above,
The magnetization rotation can be freely performed with respect to the detected external magnetic field.

That is, in the configuration of the present invention, as described above, the second antiferromagnetic layer is exchange-coupled to the free magnetic layer via the nonmagnetic spacer layer, so that the free magnetic layer and the second antiferromagnetic layer are connected. The required stabilizing bias magnetic field can be obtained by utilizing the dependence of the exchange coupling energy with the layer on the thickness of the nonmagnetic spacer layer.

FIG. 4 shows the dependence of the exchange coupling energy on the thickness of the non-magnetic spacer layer.
FIG. 8 is a plot of the measurement results of exchange coupling energy when the thickness of the nonmagnetic spacer layer in a stacked structure of a free magnetic layer made of e, a nonmagnetic spacer layer made of Cu, and an antiferromagnetic layer made of PtMn is changed. , ● plot the same measurement results of exchange coupling energy when a free magnetic layer made of NiFe is used instead of CoFe described above.

As is apparent from FIG. 4, when the thickness of the nonmagnetic spacer layer is 0, that is, when the free magnetic layer and the antiferromagnetic layer are directly joined without any intervening nonmagnetic spacer layer, , The exchange coupling energy is large. As described above, when a large exchange coupling energy is exhibited, there arises a problem that rotation of the magnetization of the free magnetic layer due to the detected external magnetic field is impaired. In addition, the selection of the exchange coupling energy in a state where the nonmagnetic spacer layer is not interposed in this manner has a small degree of freedom in selection, for example, by selecting a material. On the other hand, when a non-magnetic spacer layer is interposed, the long-distance exchange coupling energy can be selected with a high degree of freedom by selecting the thickness thereof. The direction of the magnetization is set in the above-described predetermined direction, and when a magnetic field including a component orthogonal to the direction of the magnetization is externally applied, that is, when the detection external magnetic field is applied, the optimal rotation is generated so that the rotation of the magnetization occurs. The size can be easily set.

In the present invention, as described above, the second antiferromagnetic layer which is exchange-coupled with the free magnetic layer via the non-magnetic spacer layer, that is, the long-distance exchange coupling is arranged. Therefore, by arranging the second antiferromagnetic layer over the entire area of the free magnetic layer, it is possible to uniformly set a single magnetization state in a predetermined direction by exchange coupling energy. .

Further, the effect of applying a predetermined stabilizing bias magnetic field to the free magnetic layer by the second antiferromagnetic layer laminated via the free magnetic layer and the non-magnetic spacer layer is obtained. Therefore, the bias magnetic field by the conventional hard magnetic layer described with reference to FIG. 15A can be reduced or completely eliminated. Therefore, it is possible to make the hard magnetic layer thinner or to eliminate the hard magnetic layer altogether, and the inconvenience described with reference to FIG. 15 due to the presence of the thick hard magnetic layer, that is, for example, the depression generated in the upper gap layer and the upper magnetic shield, That is, the curvature can be reduced,
The spacing between the lower and upper magnetic shields can be made uniform.

Further, since a structure can be provided in which a stabilizing bias magnetic field is applied to the free magnetic layer by cooperating with the magnetic field due to the exchange coupling energy of the second antiferromagnetic layer and the hard magnetic layer, it has been described at the beginning. SV type G with CPP configuration
In the MR, a large stabilizing bias magnetic field for the free magnetic layer for directing the direction of magnetization with respect to the induced magnetic field in a predetermined direction when a large sense current is applied can be sufficiently applied without excess or deficiency.

As described above, since the bias magnetic field caused by at least the hard magnetic layer can be weakened, this fact and the uniform magnetization state over the entire area of the free magnetic layer, that is, even at the edge, can be obtained. Together, they show high sensitivity over a wide area, flatten the sensitivity distribution,
It is possible to effectively reduce the non-sensing region at the end of the type GMR and further reduce Barkhausen noise by forming a single magnetic domain.

Further, according to the structure of the present invention, by forming a non-magnetic spacer layer on the free magnetic layer, the non-magnetic spacer layer can be formed into a so-called spin filter (a spin filter is proposed in, for example, Japanese Patent No. 2744883). ) Can function as a so-called back layer. That is, an SV type GMRS having a spin filter structure can be formed, and the magnetoresistance effect (MR ratio) can be increased.

That is, when a reproducing magnetic head for a high recording density magnetic recording medium is constituted by using the SV type GMR as a magnetic sensing portion, the free magnetic layer in the SV type GMR is also affected by a decrease in the recording signal magnetic flux accompanying the increase in recording density. In order for the magnetization to rotate sufficiently, it is necessary to reduce the amount of magnetization (Ms × t _H ) in the free magnetic layer. For this purpose, generally, the thickness t _H in the free magnetic layer is required.
Is made smaller. However, like this,
When the thickness t _H of the free magnetic layer is reduced, the direction of the magnetization in the free magnetic layer and the direction of the magnetization in the fixed magnetic layer are reduced.
The path difference of the mean free path due to the reflection of the conduction electrons on both surfaces of the free magnetic layer in the parallel state and the antiparallel state cannot be sufficiently obtained, and therefore, the magnetoresistance effect ratio (MR)
Ratio) is reduced.

On the other hand, in the configuration of the present invention described above, the nonmagnetic spacer layer made of, for example, Cu operates as a spin filter, and the path difference in the above-mentioned mean free path is caused by the nonmagnetic spacer of the free magnetic layer. A path difference corresponding to the distance between the bonding surface with the nonmagnetic conductive layer on the opposite side to the bonding surface with the layer and the bonding surface with the second antiferromagnetic layer of the nonmagnetic spacer layer, and the thickness of the free magnetic layer This can be made sufficiently large as compared with the path difference corresponding to only the height, and it is possible to compensate for the decrease in the MR ratio due to the reduction in the thickness of the free magnetic layer.

Therefore, it is possible to obtain a high detection signal with a high sensitivity and a high MR ratio, that is, a high output for a detection signal lower than that of a high-density recording medium or the like.

Further, by selecting the material of the second antiferromagnetic layer, the above-mentioned conduction electrons are specularly reflected at the junction surface between the second antiferromagnetic layer and the nonmagnetic spacer layer while maintaining the spin information. By adopting a so-called specular configuration, a higher spin filter effect can be obtained, a higher sensitivity and a higher MR ratio can be obtained, and higher output can be achieved.

Further, according to the manufacturing method of the present invention, by performing the heat treatment under the application of the first and second magnetic fields,
The first heat treatment determines the direction of anisotropy of the first antiferromagnetic layer, and the second heat treatment sets the direction of magnetization by reinducing the unidirectional anisotropy of the free magnetic layer. It is possible to reliably obtain the SV type GMR according to the present invention having the following characteristics, and a magnetic head using the SV type GMR as a magnetic sensing portion.

[0034]

FIG. 1 shows an SV type GM according to the present invention.
FIG. 3 shows a schematic cross-sectional view of an example of a so-called bottom type SV GMR configuration of one embodiment of R25. In this example, a base layer 13 is formed on a substrate 12, and a first antiferromagnetic layer 1, a fixed magnetic layer 2 joined to the first antiferromagnetic layer 1, A non-magnetic spacer layer 2 is further provided on the laminated portion including the magnetic conductive layer 3, the free magnetic layer 4 whose magnetization direction is changed by a signal magnetic field, and the free magnetic layer 4.
Second antiferromagnetic layer 22 which is long-distance exchange coupled via
Are laminated. On the second antiferromagnetic layer 22, a protective layer 23 is formed. Then, the first antiferromagnetic layer 1 and the fixed magnetic layer 2 joined thereto are formed.
The direction of the axis of easy magnetization by exchange coupling with the direction of the axis of easy magnetization by the long-distance exchange coupling magnetic field between the second antiferromagnetic layer 22 and the free magnetic layer 4 is set to be orthogonal.

FIG. 2 shows an SV type GMR according to the present invention.
FIG. 10 is a schematic cross-sectional view of an example of a so-called top type SV GMR structure according to another embodiment. In this case, a base layer 13 is formed on a substrate 12, and a second resistive layer is formed thereon. Magnetic layer 22, non-magnetic spacer layer 21, free magnetic layer 4
, A nonmagnetic conductive layer 3, a fixed magnetic layer 2, and a first antiferromagnetic layer 1, and a protective layer 23 is formed thereon.

In each of the SV-type GMRs 25, the fixed magnetic layer 2 and the free magnetic layer 4 are formed such that their easy magnetization directions are orthogonal to each other in a state where the detection magnetic field detected by the SV-type GMR 25 is not applied. The easy magnetization direction in the free magnetic layer 4 is selected so as to be orthogonal to the direction in which the detection magnetic field is introduced.

In the case of the CIP configuration, FIG.
4, the sense current is supplied in the plane direction of the SV type GMR 25, and in the CPP configuration, the sense current is supplied in the direction perpendicular to the plane direction.

The substrate 12 is made of glass, ceramics, a semiconductor, for example, a silicon substrate having a silicon oxide film formed on the surface by thermal oxidation, a substrate having aluminum oxide and aluminum nitride formed on the surface, or a magnetic shield layer, for example, formed on the surface. Alternatively, the magnetic shield / electrode layer may have various substrate configurations such as an AlTiC (AlTiC) substrate.

The underlayer 13 is used to reduce the influence of contamination of the substrate 12 and to improve the crystal orientation of a film formed thereon.
The underlayer 13 is made of, for example, Ta, or Z, for example.
It can be composed of r, Ru, Cr, Cu or the like.

The first antiferromagnetic layer 1 is made of PtMn, NiM
n, PdPtMn, Ir-Mn, Rh-Mn, Fe-M
It can be composed of n, Ni oxide, Co oxide, Fe oxide or the like.

The pinned magnetic layer 2 can be composed of, for example, a single ferromagnetic layer.
a ferri-layered magnetic layer structure formed by laminating two or more ferromagnetic layers separated by antiferromagnetic exchange coupling films of r, Rh, Ir, or two or more of these alloys and having fixed magnetizations oriented antiparallel to each other; However, it is desirable in order to facilitate later-described orthogonal heat treatment (second magnetic field application heat treatment) of the magnetic anisotropy of the fixed magnetic layer 2. The fixed magnetic layer 2
The ferromagnetic layer having a single or stacked structure is, for example, C
a ferromagnetic layer of o, Fe, Ni or an alloy of two or more of these,
Alternatively, a combination of different compositions, for example, ferromagnetic layers of Fe and Cr can be used.

The free magnetic layer 4 is made of, for example, a CoFe film, Ni
Fe film, CoFeB film, or a laminated film of these, such as CoFe / NiFe or CoFe / NiFe / Co
With the Fe configuration, a larger MR ratio and soft magnetic characteristics can be realized.

The non-magnetic conductive layer 3 and the non-magnetic spacer layer 21 are made of a non-magnetic conductive material such as Cu,
u, Ag, Pt, or Cu-Ni, Cu-Ag.

Further, the second antiferromagnetic layer 22 is made of PtMn, N, like the first antiferromagnetic layer 1 described above.
iMn, PdPtMn, Ir-Mn, Rh-Mn, Fe
—Mn, Ni oxide, Co oxide, Fe oxide, etc., but Ni oxide, Co oxide,
When formed of a metal oxide film such as an Fe oxide, as described above, the mirror surface reflecting spin information with respect to conduction electrons is provided on the bonding surface between the nonmagnetic spacer 21 and the second antiferromagnetic layer 3. And a spin filter SV-type GMR having a specular structure can be formed.

The protective layer 23 is for preventing oxidation and abrasion, and can be made of, for example, Ta, W, Zr, or the like.

Next, each SV type G shown in FIG. 1 and FIG.
An embodiment of the MR will be described. [Embodiment 1] In this embodiment, an SV type GMR 25 having a bottom type configuration shown in FIG. 1 is used. In this embodiment, a silicon substrate 12 on which an oxide film is formed is provided.
Sequential vacuum magnetron sputtering equipment,
3 nm thick Ta underlayer 13, 20 nm thick P
First antiferromagnetic layer 1 of tMn, CoFe 1.5 nm thick / Ru 0.8 nm thick / CoF 2 nm thick
e, a pinned magnetic layer 2 having a laminated ferrimagnetic structure, and a thickness of 2.9.
non-magnetic conductive layer 3 of 3 nm thick Cu and 2 nm thick Co
Free magnetic layer 4 having a laminated structure of Fe / 3.8 nm thick NiFe and nonmagnetic spacer layer 21 of 2 nm thick Cu
And the second antiferromagnetic layer 2 of 20 nm thick PtMn
2 and a protective layer 23 made of Ta having a thickness of 3 nm are sequentially formed.

[Embodiment 2] In this embodiment, FIG.
In the case of the SV type GMR 25 with the top type configuration of
In this case, an underlayer 13, a second antiferromagnetic layer 22, a nonmagnetic spacer layer 21, a free magnetic layer 4, a nonmagnetic conductive layer 3, a fixed magnetic layer 2, a first antiferromagnetic layer Layer 1 and protective layer 23 were formed. The thickness and composition of each layer were selected as the thickness and composition of each corresponding layer in Example 1.

In each of the above embodiments, the second antiferromagnetic layer 22 is made of PtMn. However, as described above, the second antiferromagnetic layer 22 is formed of an oxide layer. Specular structure spin filter type SV
A type GMR can be constructed.

Next, a method of manufacturing the SV type GMR according to the present invention will be described for the case of obtaining the SV type GMR shown in FIGS. In this case, on the substrate 12,
Underlayer 13, material layer constituting first antiferromagnetic layer 1, fixed magnetic layer 2, nonmagnetic conductive layer 3, and free magnetic layer 4
Then, a film forming step of forming a laminated structure of the nonmagnetic spacer layer 21, the material layer forming the second antiferromagnetic layer 22, and the protective layer 23 is performed.

This film is formed by, for example, a high vacuum magnetron.
Ar, Ne, Xe, Kr by sputtering equipment
Or a sputtering gas of a mixed gas of two or more of these. However, the deposition of these layers is
BD (Ion Beam Deposition), MBE (Molecular Be
am Epitaxy: molecular beam epitaxy), various deposition techniques such as vacuum deposition.

Thereafter, a first heat treatment for determining the magnetic anisotropy of the fixed magnetic layer 2, that is, the direction of the axis of easy magnetization, and a second heat treatment step for re-inducing the magnetic anisotropy of the free magnetic layer 4, I do. FIGS. 3A and 3B are explanatory views of the first and second heat treatments. In FIGS. 3A and 3B, in order to facilitate understanding, the fixed magnetic layer 2 and the free magnetic layer 4 Are shown side by side for convenience. The first and second heat treatments are performed under the application of magnetic fields Hex1 and Hex2, respectively, along the film surface and orthogonal to each other.

By this first heat treatment, the anisotropic directions of the first and second antiferromagnetic layers 1 and 22 are determined,
The magnetization of the fixed magnetic layer 2 is fixed. That is, according to the first heat treatment, magnetization (arrow M ₄ of the magnetization (indicated by a dotted arrow M ₂₎ and a free magnetic layer 4 once fixed magnetic layer 2 by heating under application of a magnetic field Hex1 shown in Figure 3A Although shown) is oriented with the applied magnetic field Hex1 in the same direction, with decreasing temperature after processing, the first antiferromagnetic layer 1 strongly exchange coupled to the pinned magnetic layer 2 is, as shown by the solid line arrows M ₂ , Inverted and fixed in this orientation.

The applied magnetic field Hex1 in the first heat treatment
In the case where the fixed magnetic layer 2 has a laminated ferri structure, a high magnetic field of, for example, 10 k [Oe] is selected.
e]. Further, the heating temperature in the first heat treatment may be, for example, 265 ° C., and the holding time may be 4 hours.

In the first heat treatment, for example, the constituent materials of the first and second antiferromagnetic layers 1 and 22 have an irregular phase, such as PtMn, in the as-deposited state. When the ordered antiferromagnetic material does not exhibit ferromagnetism, the first heat treatment can transform the disordered phase into an ordered phase to exhibit antiferromagnetism.

Next, as shown in FIG. 3B, a second heat treatment is performed under the application of a magnetic field Hex2 perpendicular to the applied magnetic field Hex1 in the first heat treatment. The second heat treatment is selected at a low temperature at which the anisotropy of the fixed magnetic layer 2 is not dispersed by the heat treatment, as will be described later. , 240
C. to 300.degree. C., and the applied magnetic field in the second heat treatment is selected to be 100 [Oe] to 1000 [Oe] of the magnetic field Hex2, which is sufficiently lower than the applied magnetic field Hex1 in the first heat treatment. In this way, the second heat treatment, the free magnetic layer 4, a magnetic anisotropy, and the direction perpendicular to that of the fixed magnetic layer 2, to indicate the direction of magnetization thereof by the arrow M _2, the magnetic field Hex2 Redirect along.

As described above, in the manufacturing method of the present invention, the first and second magnetic field applying heat treatments are performed.
It has high heat resistance because it has an effect of suppressing the diffusion of, for example, Mn element contained in the antiferromagnetic layer 1 of FIG. From this, it is possible to avoid deterioration of characteristics in the manufacturing process in which at least the first and second high-temperature heat treatments are performed. Further, the laminated ferrimagnetic layer structure is composed of two ferromagnetic layers arranged in anti-parallel with each other.
Since it has a configuration in which a coupling film made of, for example, 0.8 nm-thick Ru, which shows extremely strong antiparallel coupling, is interposed, the magnetization is not easily rotated with respect to an external magnetic field. In the above-described second magnetic field application heat treatment, when the magnetic field application perpendicular to the magnetic field application direction in the first magnetic field application heat treatment is performed, the fixed magnetic layer 2
The easy axis of free magnetic layer 4 alone can be easily rotated without rotating the easy axis of magnetization.

Further, these heat treatments will be described in detail. First, the bottom type SV type GMR 25 described with reference to FIG.
And the top type SV type GMR 25 described with reference to FIG. The bottom type SV type GMR includes a base layer 13 made of a Ta film having a thickness of 3 nm and a Cu film having a thickness of 1.3 nm, and a first layer made of PtMn having a thickness of 20 nm formed on a substrate 12 by a vacuum magnetron sputtering apparatus. An antiferromagnetic layer 1, a fixed magnetic layer 2 having a laminated ferri structure of CoFe with a thickness of 1.5 nm / Ru with a thickness of 0.8 nm / CoFe with a thickness of 2 nm, and a nonmagnetic conductive material with a Cu thickness of 2.9 nm. Layer 3 with 0.5 nm thick CoFe / 4 nm thick Ni
A free magnetic layer 4 having a laminated structure of Fe / CoFe with a thickness of 0.5 nm, a nonmagnetic spacer layer 21 of Cu with a thickness of 1.0 nm, and a second antiferromagnetic layer 22 of PtMn with a thickness of 20 nm; A 3 nm thick protective layer 23 made of Ta was sequentially formed into a laminated structure. Top type SV type GMR25
The thickness, configuration, and composition of each layer were common except that the order of film formation was reversed from that of the bottom type.

FIGS. 5 and 6 show the results of measuring the magnetic field dependence of the MR ratios of the above-described bottom-type and top-type SV-type GMRs by the first and second heat treatments, respectively. 5 and FIG. 6 show that the heating temperature is 265 ° C., the heating holding time is 4 hours, and the magnetic field Hex1 is 10 k.
The measurement results after the first heat treatment of [Oe] are shown. Each of B, C and D in FIGS. 5 and 6 indicates that the second heat treatment was performed for 4 hours and the magnetic field Hex2 was set to 100 [Oe]. The heating temperature is 220 ° C, 240 ° C and 3 ° C.
This is the case where the temperature is set to 00 ° C. The direction of application of the magnetic field indicated by the horizontal axis in each figure was selected as the direction of easy magnetization of the fixed magnetic layer, and the negative side was antiparallel and the positive side was parallel.

According to the MR characteristics after the first heat treatment shown in FIGS. 5 and 6A, the non-magnetic spacer layer 21 made of Cu exhibits characteristics like a spin valve film in which a relatively large negative exchange coupling acts. . It is considered that this is because the free magnetic layer 4 was exchange-coupled to the second antiferromagnetic layer 22 via the nonmagnetic spacer layer 21 and the magnetic properties of the free magnetic layer 4 were shifted in magnetic field. The direction is opposite to the heat treatment magnetic field because the fixed magnetic layer 2 has the laminated ferrimagnetic structure, whereas the free magnetic layer 4 is negative because the magnetization is arranged in the heat treatment magnetic field direction. It seems to exhibit characteristics like a spin-valve film showing interlayer bonding.

In this characteristic, when the second heat treatment is performed, the applied magnetic field in the second heat treatment is applied by a low magnetic field such as 1000 [Oe] as described above. As described above, the direction of the anisotropy of only the free magnetic layer 4 changes to the direction of the second heat treatment magnetic field. At this time, when the fixed magnetic layer 2 has a laminated ferrimagnetic structure, the direction of the magnetization does not change with such a relatively low magnetic field.

When the second heat treatment temperature is about 220 ° C., as is apparent from FIGS.
There is almost no change in the MR characteristics. On the other hand, when the second heat treatment temperature is set to 240 ° C. to 300 ° C., the direction of the anisotropy of the free magnetic layer 4 changes as shown in FIGS. Free magnetic layer 4
Shows an excellent MR characteristic showing a hard axis response to the signal magnetic field direction.

FIGS. 7 and 8 show the first and second heat treatments when the applied magnetic field Hex2 in the second heat treatment of each of the bottom and top SV GMRs described above is changed. The results of measuring the magnetic field dependence of the MR ratio are shown. 7 and 8 show the heating temperature of 265 ° C., the heating holding time of 4 hours, and the magnetic field Hex1 of 10 A, respectively.
The measurement results after the first heat treatment with k [Oe] are shown. B, C and D in FIGS. 7 and 8 respectively show the second heat treatment selected at 240 ° C. for 4 hours, and The magnetic field Hex2 is 100 [Oe], 400 [Oe] and 1000 [Oe]. The direction of application of the magnetic field indicated by the horizontal axis in each figure was the same as in FIGS. 5 and 6.

In this case, when the applied magnetic field in the second heat treatment was increased, it was expected that the anisotropic dispersion of the laminated ferrimagnetic pinned magnetic layer 2 would proceed and the MR ratio would decrease. As is clear from FIGS. B, C and D, even when the applied magnetic field is 1000 [Oe], almost no change occurs in the MR ratio. For example, when the heat treatment magnetic field is set to 100
In the case of [Oe], it was confirmed that the margin for the anisotropic dispersion of the fixed magnetic layer 4 was 8 times or more the magnetic field strength.

That is, as apparent from FIGS. 7 and 8, the applied magnetic field in the second heat treatment is 100
It can be seen that excellent MR characteristics can be obtained at [Oe] to 1000 [Oe].

The dependence of the thickness of the nonmagnetic spacer layer 21 on the above-described bottom type and top type SV GMRs was also considered. FIGS. 9 and 10 show the results of measuring the magnetic field dependence of the MR ratio by the first and second heat treatments when the thickness of the nonmagnetic spacer layer 21 is changed. In this case, the first heat treatment conditions are a heating temperature of 265 ° C., a heating holding time of 4 hours, and a magnetic field Hex1 of 1
0 k [Oe], and the second heat treatment condition is a heating temperature of 24
0 ° C., heating hold time 4 hours, magnetic field Hex2 100 [O
e]. The A, B, C, and D diagrams of FIGS. 9 and 10 respectively show the nonmagnetic spacer layer 21 made of Cu.
The MR characteristics were measured when the thickness was 0.5 nm, 1.0 nm, 1.5 nm, and 2.0.

9 and 10 that the response of the MR ratio to the magnetic field becomes steeper as the thickness of the nonmagnetic spacer layer 21 is increased. That is, the thickness of the nonmagnetic spacer layer 21 causes the second antiferromagnetic layer 22
It can be seen that the exchange coupling energy with the free magnetic layer, and hence the bias magnetic field strength for the free magnetic layer, can be adjusted. Further, as a method of adjusting the bias magnetic field strength after the film formation, for example, in the case of a bottom structure, it can be performed by adjusting the film thickness of the second antiferromagnetic layer 21 by etching or the like. Become.

The SV type GMR 25 according to the present invention is
FIG. 11A shows an example in which a magnetic head corresponding to, for example, the configuration described with reference to FIG. In this example, the CI
In the case of the P configuration, in FIG. 11, the portions corresponding to FIG. 15 are denoted by the same reference numerals.

In this magnetic head 29, a lower gap layer 7 of a non-magnetic layer having a required thickness is formed on the lower magnetic shield 6, and the bottom gap layer 7 according to the present invention of the bottom type shown in FIG. An SV-type GMR 25 is formed, and a stabilizing bias magnetic field required for the free magnetic layer of the SV-type GMR 5 is provided on both sides of the SV-type GMR 25 in the same direction as the stabilizing bias magnetic field by the above-described second antiferromagnetic layer 22. A pair of electrodes 9 for supplying a sense current in the surface direction of the SV type GMR 25 are arranged on the hard magnetic layer 8 which is magnetized so as to give a magnetic field. Then, an upper gap layer 10 of a non-magnetic layer is formed on the entire surface, and an upper magnetic shield 11 is formed thereon by attachment.

In the example shown in FIG. 11A, the hard magnetic layer 8
Are arranged, and in this case, the SV type G
The bias magnetic field HB for the free magnetic layer of the MR 25 is obtained by cooperation of the second antiferromagnetic layer 22 and the hard magnetic layer 8 described above. Therefore, even when the hard magnetic layer 8 is provided, the magnetic field strength can be made sufficiently small, so that the thickness can be made sufficiently thin or omitted, and as shown in FIG. The gap between the upper and lower magnetic shields 11 and 6 is substantially flat as a whole,
25 can be uniformed over the entire area.

As described above, the magnetic field strength of the hard magnetic layer 8 disposed on both side end faces of the free magnetic layer can be reduced or eliminated.
By arranging the second antiferromagnetic layer 22 described above, the sensitivity is high and uniform over a wide area as shown in FIG. 11B, and the insensitive region Ns described in FIG. Can be significantly reduced. That is,
The effective width We can be made close to the optical width W, and an SV GMR and a reproducing magnetic head having excellent sensitivity can be configured.

In the example of the magnetic head 29 shown in FIG. 11A, the CIP configuration is used. However, a CPP configuration in which the sense current flows in the direction perpendicular to the film surface may be used. FIG. 12 shows a schematic sectional view of an example of this case. SiO ₂ In this case, for example, in place of the electrodes 9 in FIG. 11A
A non-magnetic insulating layer 30 made of, for example, Al ₂ O ₃ or the like is disposed, and the upper and lower gap layers 10 and 7 are constituted by conductive non-magnetic layers. Further, the upper and lower magnetic shields 11 and 6 are used as magnetic shields and electrodes made of a conductive magnetic layer, and a sense current is applied between them. 12, parts corresponding to those in FIG. 11A are denoted by the same reference numerals, and redundant description will be omitted.

For example, in contrast to the magnetic heads shown in FIGS. 11A and 12, the magnetic recording medium (not shown) is relatively shown in FIGS. 11A and 12 along the paper surface and in a direction perpendicular to the film surface. A signal magnetic field (detection magnetic field) from the magnetic recording portion of the magnetic recording medium is applied between the magnetic shields 6 and 11 to the SV type GMR at right angles to the bias magnetic field HB and along the film surface. It is made to be done. Then, an MR change caused by the application of the signal magnetic field is detected as a voltage change due to the sense current.

These magnetic heads may be floating magnetic heads arranged on a slider that floats on a magnetic recording medium, for example, a magnetic disk, from the surface of the recording medium by an airflow caused by rotation of the magnetic disk.

A recording / reproducing magnetic head can also be constructed by using the reproducing magnetic head according to the present invention, for example, by integrating it with, for example, an electromagnetic induction type recording head as shown in a schematic perspective view in FIG. In this example, the SV type GMR 25 of the magnetic sensing part has a CIP configuration.
13, parts corresponding to those in FIG. 11A are denoted by the same reference numerals, and redundant description will be omitted. Further, in this example, the SV type GMR is disposed facing the front surface 31 which is the surface facing or facing the recording medium.

In this example, the upper shield 1
On the front surface 31 side, SiO ₂ , Al ₂ constituting a magnetic gap in the electromagnetic induction type recording head 32
A nonmagnetic layer 33 made of O ₃ or the like is formed, and a coil 34 formed of a conductive layer is formed thereon. On the non-magnetic layer 33, a magnetic core 35 made of a magnetic layer is formed with its front end facing the front surface 31, and its rear side is formed through a through-hole formed in the non-magnetic layer 33 and through a coil. 3
4 and is magnetically coupled to the magnetic shield 11. In this way, a magnetic gap is formed by the nonmagnetic layer 30 on the front surface, and the magnetic core 35
Thus, the inductive recording magnetic head 32 in which a closed magnetic path is formed by the magnetic shield 11 constitutes a recording / reproducing magnetic head integrally formed with the SV-type GMR magnetic head 29.

In this example, the SV type GMR 25
Is a configuration in which a flux guide layer is magnetically coupled to a free magnetic layer of the SV-type GMR 25, and an end of the flux guide layer is connected to the front surface. , The signal magnetic field from the recording medium may be introduced into the SV-type GMR 25. In addition, the SV type GMR 25 constituting the magnetic sensing unit is shown in FIG.
FIG. 13 shows that the CPP configuration shown in FIG.
Various modifications and changes can be made in the configuration of the present invention, which is not limited to the structure shown by.

[0077]

As described above, the SV type G according to the present invention is used.
In MR, the first antiferromagnetic layer sets the magnetization state of the fixed magnetic layer in a predetermined direction as before, but on the opposite side, the free magnetic layer and the nonmagnetic spacer Second long-distance exchange coupling through the layer
When a hard magnetic layer for applying a bias magnetic field to the free magnetic layer is provided by the exchange coupling energy with the second antiferromagnetic layer, In a state where the detection external magnetic field is not applied to the free magnetic layer by the action, a magnetization state in a predetermined direction is set, and the rotation of the magnetization can be easily generated depending on the detection external magnetic field.

As described above, since the exchange coupling of the second antiferromagnetic layer to the free magnetic layer is performed by long-distance exchange coupling with the nonmagnetic spacer layer interposed therebetween, the material and thickness of the nonmagnetic spacer layer are changed. The degree of freedom in selecting the exchange coupling energy is increased by the selection of, and a desired bias magnetic field can be reliably applied to the free magnetic layer.

The second antiferromagnetic layer, which is exchange-coupled to the free magnetic layer over a long distance, can be arranged over the entire free magnetic layer. In the above, it is possible to uniformly set a single magnetization state in a predetermined direction, and since the bias magnetic field by the hard magnetic layer can be reduced or completely eliminated, the hard magnetic layer can be made thinner. In combination with the fact that the structure can be eliminated or completely eliminated, Barkhausen noise can be avoided, high sensitivity over a large area, the sensitivity distribution can be flattened, and the insensitive area at the end of the SV GMR can be reduced. The reduction can be effectively achieved.

Further, by reducing or eliminating the thickness of the hard magnetic layer, it is possible to reduce or flatten the depressions, that is, the curvatures generated in the upper gap layer and the upper magnetic shield, and to reduce the gap between the lower and upper magnetic shields. It is possible to achieve uniformity.

In particular, in the SV type GMR having the CPP structure, when the feature of the SV type GMR, that is, when the sense current is increased, the thickness of the hard magnetic layer is increased with respect to the induced magnetic field caused by the sense current. Since a sufficient stabilizing bias can be applied without reducing the thickness of the free magnetic layer, a stable C
An SV type GMR having a PP configuration and a magnetic head using the same can be configured.

Further, according to the structure of the present invention, by forming the nonmagnetic spacer layer on the free magnetic layer, the nonmagnetic spacer layer can function as a so-called back layer in the spin filter. That is,
SV type GMRS having spin filter structure
Can be configured.

[0083] Further, by selecting the material of the second antiferromagnetic layer, a surface on which the above-described conduction electrons are specularly reflected while maintaining spin information, at a junction surface between the second antiferromagnetic layer and the nonmagnetic spacer layer, so-called, With the specular configuration, a higher spin filter effect can be obtained, higher sensitivity and a higher MR ratio can be obtained, and higher output can be achieved.

Further, according to the manufacturing method of the present invention, by performing the heat treatment under the application of the first and second magnetic fields,
The first heat treatment determines the direction of anisotropy of the first antiferromagnetic layer, and the second heat treatment sets the direction of magnetization by reinducing the unidirectional anisotropy of the free magnetic layer. It is possible to reliably obtain the SV type GMR according to the present invention having the following characteristics, and a magnetic head using the SV type GMR as a magnetic sensing portion.

As described above, by forming the pinned magnetic layer as a laminated ferrimagnetic layer, the first and second magnetic field applying heat treatments described above can be performed with high heat resistance and easily orthogonalized. As a result, the intended SV-type GMR and the magnetic head using the same as the magnetic sensing portion can be obtained more reliably.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an example of a spin valve type giant magnetoresistance effect element according to the present invention.

FIG. 2 is a schematic sectional view of another example of the spin-valve giant magnetoresistance effect element according to the present invention.

FIGS. 3A and 3B are explanatory diagrams of first and second heat treatments in the manufacturing method of the present invention. FIGS.

FIG. 4 is a diagram showing the dependence of the exchange coupling energy between the antiferromagnetic layer and the free magnetic layer on the thickness of the nonmagnetic spacer layer for explaining the present invention.

FIG. 5 is a view showing the magnetic field dependence of the MR ratio for explaining the method of manufacturing the bottom-type spin-valve giant magnetoresistance effect element according to the present invention. FIG. 2A is a diagram showing the magnetic field dependence of the MR ratio after the first heat treatment. B to D represent the M values when the applied magnetic field strength of the second heat treatment was changed, respectively.
It is a figure which shows the magnetic field dependence of R ratio.

FIG. 6 is a diagram showing the magnetic field dependence of the MR ratio for explaining the method of manufacturing the top spin valve type giant magnetoresistance effect element according to the present invention. FIG. 3A is a diagram showing the magnetic field dependence of the MR ratio after the first heat treatment. FIGS. 4B to 4D are diagrams showing the magnetic field dependence of the MR ratio when the heating temperature of the second heat treatment is changed.

FIG. 7 is a diagram showing the magnetic field dependence of the MR ratio for explaining a method of manufacturing a bottom-type spin-valve giant magnetoresistance effect element according to the present invention. FIG. 2A is a diagram showing the magnetic field dependence of the MR ratio after the first heat treatment. B to D represent the M values when the applied magnetic field strength of the second heat treatment was changed, respectively.
It is a figure which shows the magnetic field dependence of R ratio.

FIG. 8 is a diagram showing a magnetic field dependency of an MR ratio for explaining a method of manufacturing a top-type spin-valve giant magnetoresistance effect element according to the present invention. FIG. 2A is a diagram showing the magnetic field dependence of the MR ratio after the first heat treatment. B to D represent the M values when the applied magnetic field strength of the second heat treatment was changed, respectively.
It is a figure which shows the magnetic field dependence of R ratio.

9A to 9D are graphs showing the magnetic field dependence of the MR ratio when the thickness of the non-magnetic spacer for long-distance exchange coupling in the bottom-type spin-valve giant magnetoresistive element is changed.

FIGS. 10A to 10D are graphs showing the magnetic field dependence of the MR ratio when the thickness of the long-distance exchange-coupled nonmagnetic spacer in the top spin-valve giant magnetoresistance effect element is changed.

FIGS. 11A and 11B are a schematic cross-sectional view of an example of a magnetic head using a spin-valve giant magnetoresistive element according to the present invention and a diagram showing the relationship between the sensitivities of the spin-valve giant magnetoresistive element.

FIG. 12 is a schematic cross-sectional view of another example of the magnetic head using the spin-valve giant magnetoresistive element according to the present invention.

FIG. 13 is a schematic perspective view of an example of a recording / reproducing magnetic head using the magnetic head according to the present invention.

FIG. 14 is a schematic sectional view of a conventional spin-valve giant magnetoresistance effect element.

FIGS. 15A and 15B are a schematic cross-sectional view of a magnetic head using a conventional spin-valve giant magnetoresistive element and a diagram showing the relationship between the sensitivities of the spin-valve giant magnetoresistive element.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Antiferromagnetic layer (1st antiferromagnetic layer), 2 ... Pinned magnetic layer, 3 ... Nonmagnetic conductive layer, 4 ... Free magnetic layer, 5 ... Spin valve type Giant magnetoresistance effect element (S
V-type GMR), 6: Lower magnetic shield, 7: Lower gap layer, 8: Hard magnetic layer, 9: Electrode, 10
... upper gap layer, 11 ... upper magnetic shield,
12 ... substrate, 13 ... underlayer, 21 ... nonmagnetic spacer layer, 22 ... second antiferromagnetic layer, 23 ...
Protective film, 29: magnetic head, 30: non-magnetic insulating layer, 31: front surface, 32: recording head, 33
..Nonmagnetic layer, 34 ... coil, 35 ... core

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 43/12 G01R 33/06 R

Claims (14)

[Claims] 1. A first antiferromagnetic layer, a fixed magnetic layer joined to the first antiferromagnetic layer, a nonmagnetic conductive layer, and a free magnetic layer whose magnetization direction changes according to a detection magnetic field to be detected. And a second antiferromagnetic layer that is exchange-coupled to the free magnetic layer over a long distance via a nonmagnetic spacer layer. The first antiferromagnetic layer and the fixed magnetic layer joined thereto And the direction of the easy axis by the exchange coupling magnetic field of the second antiferromagnetic layer and the free magnetic layer is set to be orthogonal to the direction of the easy axis by the long-distance exchange coupling magnetic field. Spin valve type giant magnetoresistance effect element. 2. The fixed magnetic layer has a laminated ferrimagnetic structure and is used for orthogonalizing the free magnetic layer and the fixed magnetic layer in the respective easy axis directions.
3. The spin valve type giant magnetoresistive element according to 1.). 3. A hard magnetic layer for applying a bias magnetic field to the free magnetic layer is disposed opposite to the opposite side end faces of the free magnetic layer. 2. The spin valve type giant magnetoresistive element according to claim 1, wherein a stabilizing bias magnetic field is applied to the free layer by cooperation with a long-distance exchange coupling magnetic field by the ferromagnetic layer. 4. A free magnetic layer for applying a bias magnetic field facing opposite side end faces of the free magnetic layer is provided, and the free magnetic layer is freed by the long-distance exchange coupling magnetic field by the second antiferromagnetic layer. 2. The spin valve type giant magnetoresistive element according to claim 1, wherein a stabilizing bias magnetic field is applied to the magnetic layer. 5. A magnetic sensing part comprising a spin valve type giant magnetoresistive element, wherein said spin valve type giant magnetoresistive element comprises a first antiferromagnetic layer, and a first antiferromagnetic layer. A fixed magnetic layer to be joined, a nonmagnetic conductive layer, a free magnetic layer whose magnetization direction changes according to a detection magnetic field to be detected, and a second magnetic layer that is exchange-coupled to the free magnetic layer via a nonmagnetic spacer layer for a long distance. An antiferromagnetic layer, a direction of an easy axis of magnetization by exchange coupling between the first antiferromagnetic layer and the fixed magnetic layer joined thereto, and a direction of the second antiferromagnetic layer and the free magnetic layer. A magnetoresistance effect type magnetic head characterized in that the direction of an easy axis of magnetization due to a long-distance exchange coupling magnetic field with a layer is set to be orthogonal. 6. The fixed magnetic layer has a laminated ferrimagnetic structure, and is provided for orthogonalizing the free magnetic layer and the fixed magnetic layer in the respective easy axis directions.
3. A magnetoresistive head according to claim 1. 7. A hard magnetic layer for applying a bias magnetic field to the free magnetic layer is disposed opposite to the opposing side end faces of the free magnetic layer. 6. The magnetoresistive head according to claim 5, wherein a stabilizing bias magnetic field is applied to the free layer by cooperation with a long-distance exchange coupling magnetic field by the ferromagnetic layer. 8. A long-distance exchange coupling magnetic field generated by the second antiferromagnetic layer without providing a hard magnetic layer for applying a bias magnetic field facing the side end faces of the free magnetic layer opposite to each other. 6. The magnetoresistive head according to claim 5, wherein a stabilizing bias magnetic field is applied to the magnetic layer. 9. A semiconductor device comprising: a material layer constituting at least a first antiferromagnetic layer, a fixed magnetic layer joined to the material layer constituting the first antiferromagnetic layer, and a nonmagnetic conductive layer on a substrate. A free magnetic layer whose magnetization direction changes according to a detection magnetic field to be detected,
Forming a layer forming a laminated structure with a material layer constituting a second antiferromagnetic layer which is long-distance exchange-coupled to the free magnetic layer via a non-magnetic spacer layer; A magnetic field application heat treatment step, wherein the first magnetic field application heat treatment determines the anisotropic direction of the antiferromagnetic layer that fixes the magnetization of the fixed magnetic layer, and the second magnetic field application heat treatment A method of manufacturing a spin-valve giant magnetoresistive element, wherein the anisotropy of the free layer is induced again. 10. The fixed magnetic layer in the film forming step is formed by a laminated ferrimagnetic structure, and each of the free magnetic layer and the fixed magnetic layer formed by the first and second magnetic field applying heat treatments is formed. 10. The method for manufacturing a spin-valve giant magnetoresistive element according to claim 9, wherein orthogonalization in the direction of easy axis of magnetization is promoted. 11. The second magnetic field application heat treatment includes a heating temperature of 240 ° C. to 300 ° C. and a magnetic field of 100 [Oe] to 1000 ° C.
The method for producing a spin-valve giant magnetoresistive element according to claim 10, wherein the method is selected as [Oe]. 12. A method of manufacturing a magneto-resistance effect type magnetic head in which a magnetic sensing portion is constituted by a spin-valve type giant magneto-resistance effect element, wherein the spin valve type giant magneto-resistance effect element is formed on a substrate. A material layer constituting at least the first antiferromagnetic layer, a fixed magnetic layer joined to the material layer constituting the first antiferromagnetic layer, a nonmagnetic conductive layer, and a detection magnetic field to be detected. Each layer forming a laminated structure of a free magnetic layer whose magnetization direction changes and a material layer constituting a second antiferromagnetic layer which is long-distance exchange-coupled to the free magnetic layer via a nonmagnetic spacer layer is formed. Forming a film, and first and second magnetic field applying heat treatment steps, wherein the first magnetic field applying heat treatment determines the anisotropic direction of the antiferromagnetic layer that fixes the magnetization of the fixed magnetic layer. And the second magnetic field applying heat treatment Method for manufacturing a magneto-resistance effect type magnetic head which is characterized in that the re-induction of anisotropy of the free layer. 13. The fixed magnetic layer in the film forming step is formed by a laminated ferrimagnetic structure, and each of the free magnetic layer and the fixed magnetic layer formed by the first and second magnetic field applying heat treatments is formed. 13. The method of manufacturing a magnetoresistive head according to claim 12, wherein the orthogonalization of the easy axis direction is assisted. 14. The second magnetic field applying heat treatment is performed at a heating temperature of 240 ° C. to 300 ° C. and a magnetic field of 100 [Oe] to 1000 °.
14. The method according to claim 13, wherein the method is performed by [Oe].