JP2002226964A - Sputtering equipment - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To improve the product yield by preventing film peeling from a deposition-preventing plate, and to improve the operation rate of the apparatus by reducing the frequency of replacement of the deposition-preventing plate. SOLUTION: A film forming chamber 1 capable of evacuating the inside, a sputtering electrode 7 provided inside the film forming chamber 1 and having a target 6 as a film forming material, and a discharge gas 5 introduced into the film forming chamber 1 are introduced. Gas introducing means 3, a power supply 9 for supplying power to the sputtering electrode 7, and a substrate holder transfer unit 11 for transporting a substrate holder 14 on which a substrate 15 is installed to the film forming chamber 1.
Mask 1 for preventing film adhesion to a part of substrate 15
6 and a deposition-preventing plate 17 for preventing the film from adhering to the inner wall of the film forming chamber 1
In a single-wafer sputtering apparatus provided with
The outer dimensions of the deposition-prevention mask 16 installed on the outer periphery of the target 5 are set to 70% or more and 130% or less of the outer dimensions of the target 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a sputtering apparatus for forming a thin film by a sputtering method.

[0002]

2. Description of the Related Art Sputtering generally generates plasma by causing gas discharge in a low vacuum atmosphere.
This is a method in which positive ions of plasma are made to collide with a target provided on a negative electrode called a sputtering electrode, and particles sputtered by the collision are attached to a substrate to form a thin film. This sputtering method is widely used in the film forming process because the composition control and the operation of the apparatus are relatively easy.

FIG. 4 shows the structure of a conventional single-wafer sputtering apparatus in the vicinity of a film forming chamber. In FIG. 4, reference numeral 31 denotes a film forming chamber, and 32 denotes an exhaust port of the film forming chamber 31 evacuated by a vacuum pump (not shown). Reference numeral 33 denotes a gas introducing unit to the film forming chamber 31, and reference numeral 34 denotes a gas flow controller provided in the gas introducing unit 33. Reference numeral 35 denotes a discharge gas introduced into the film forming chamber 31 by the gas introduction means 33, which is usually argon gas.

Reference numeral 36 denotes a target, and 37 denotes a sputtering electrode. An insulator 38 electrically insulates the film forming chamber 31 from the sputtering electrode 37. 39 is a power supply for discharge.

Reference numeral 40 denotes a transfer chamber adjacent to the film forming chamber 31;
Is a substrate holder transfer unit, and 42 is a shaft, which is connected to a mechanism for moving the substrate holder transfer unit 41 back and forth in the direction of arrow 43. 44 is a substrate holder; 45 is a substrate;
Is mounted on the substrate holder 44 and is transferred to a position facing the target 36 by the substrate holder transfer section 41 to form a thin film.

Reference numeral 46 denotes an adhesion mask, which covers a portion of the substrate 45 on which a film is not formed and serves to fix the substrate 45 to the substrate holder 44. Reference numeral 47 denotes a deposition prevention plate,
This prevents the film that does not reach 5 from adhering to the inner wall of the film forming chamber 31.

[0007] The operation of the sputtering apparatus configured as described above will be described below.

First, the inside of the film forming chamber 31 is evacuated to about 10 ⁻⁵ Pa from the exhaust port 32 by a vacuum pump. On the other hand, substrate 4
5 is fixed to the substrate holder 44 by the deposition prevention mask 46, and is transported by the substrate holder transfer section 41 to a position facing the target 36. Then, the substrate 45 is set in the film formation chamber 31 by pressing the substrate holder transfer unit 41 against the film formation chamber 31 by the shaft 42.

Next, a discharge gas 35 is introduced into the film forming chamber 31 by gas introducing means 33 connected to the film forming chamber 31, and the pressure in the film forming chamber 31 is maintained at about 0.2 to several Pa. . In this state, a power is supplied from a direct-current or high-frequency discharge power supply 39 to the sputtering electrode 37 to which the target 36 is attached, whereby plasma is generated and a sputtering phenomenon occurs. A thin film is formed on the substrate 45 provided thereon.

When the substrate 45 is continuously processed,
When the film that has accumulated on the deposition-preventing plate 47 becomes thicker, the deposition-preventing plate 47 is replaced.

[0011]

However, in the configuration as shown in FIG. 4, as shown in FIG. 5, the protection plate 47 is disposed so as to extend to a portion adjacent to the substrate 45. The film 4 is disposed on the deposition-preventing plate 47, especially near the substrate 45.
8 becomes remarkable. As a result, in the single-wafer sputtering apparatus in which the substrate 45 is continuously supplied, the film 48 is easily peeled off from the deposition-preventing plate 47, and the peeled film scatters on the substrate 45 as shown by the arrow to be deposited on the substrate 45. There is a problem that a particle phenomenon occurs and the yield of products is reduced.

Further, if the frequency of replacing the deposition-preventing plate 47 is increased in order to prevent the yield from lowering, the film forming chamber 31 needs to be once set to the atmospheric pressure, which causes a problem that the operation rate of the apparatus is remarkably reduced. .

Although techniques such as surface treatment and temperature adjustment have been proposed to extend the life of the deposition-preventing plate, in recent years, plasma on the deposition-preventing plate has been reduced due to a decrease in the distance between the substrate and the target. Due to damage, the service life cannot be extended sufficiently,
There is a problem that the operation rate of the device is reduced.

In view of the above-mentioned conventional problems, the present invention can improve the yield of products by preventing film peeling from the deposition-preventing plate, and can improve the operation rate of the apparatus by reducing the frequency of replacement of the deposition-preventing plate. An object is to provide a sputtering apparatus.

[0015]

According to the present invention, there is provided a sputtering apparatus comprising: a film forming chamber capable of evacuating the inside; a sputtering electrode provided in the film forming chamber and having a target to be a film forming material; Gas introduction means for introducing a discharge gas into the chamber, a discharge power supply for supplying power to the sputtering electrode, a substrate holder transfer unit for transporting the substrate holder on which the substrate is installed to the film formation chamber, and a part of the substrate. In a single-wafer sputtering apparatus provided with a deposition mask for preventing film adhesion and a deposition plate for preventing film deposition on the inner wall of the film forming chamber, the outer dimensions of the deposition mask installed on the outer periphery of the substrate are reduced. 70% or more and 130% or less of the external dimensions of the target,
Since the deposition plate is disposed outside the area where the amount of target particles adhered is large, the adhesion of the film is reduced, the film is prevented from peeling off from the deposition plate, the yield of the product is improved, and the deposition plate is also improved. The frequency of replacement can be reduced, and the operation rate of the device can be improved.

Further, it is preferable that the deposition mask disposed on the outer periphery of the substrate and having a large film adhesion amount be transported in a vacuum and replaced.

Further, it is preferable that the substrate and the deposition-proof mask provided on the outer periphery of the substrate are simultaneously transported in a vacuum and exchangeable.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of a sputtering apparatus according to the present invention will be described below with reference to FIGS.

In FIG. 1, which shows an apparatus configuration near a film forming chamber of a single-wafer sputtering apparatus, reference numeral 1 denotes a film forming chamber, and reference numeral 2 denotes an exhaust port of the film forming chamber 1 which is evacuated by a vacuum pump (not shown). . Reference numeral 3 denotes a gas introducing unit to the film forming chamber 1, and 4 denotes a gas flow controller provided in the gas introducing unit 3. Reference numeral 5 denotes a discharge gas introduced into the film forming chamber 1 by the gas introduction means 3, which is usually argon gas.

Reference numeral 6 denotes a target, and 7 denotes a sputtering electrode. Reference numeral 8 denotes an insulator, which electrically insulates the film forming chamber 1 from the sputtering electrode 7. 9 is a power supply for discharge.

Reference numeral 10 denotes a transfer chamber adjacent to the film forming chamber 1, reference numeral 11 denotes a substrate holder transfer portion, and reference numeral 12 denotes a shaft, which is connected to a mechanism for moving the substrate holder transfer portion 11 back and forth in the direction of arrow 13. 14 is a substrate holder, 15 is a substrate,
Is mounted on the substrate holder 14 and is transferred to a position facing the target 6 by the substrate holder transfer section 11 to form a thin film.

Numeral 16 denotes a deposition mask, which covers a portion of the substrate 15 on which no film is formed and serves to fix the substrate 15 to the substrate holder 14, and has the same outer dimensions as the target 6. Reference numeral 17 denotes a deposition prevention plate,
In order to prevent the film that does not reach 5 from adhering to the inner wall of the deposition chamber 1, the outer peripheral portion of the target 6 and the deposition mask 16 are surrounded so as to surround the space between the target 6 and the deposition mask 16. It is disposed in a cylindrical shape between the outer peripheral portions.

The operation of the sputtering apparatus configured as described above will be described below.

First, the inside of the film forming chamber 1 is evacuated from the exhaust port 2 to about 10 ^-5 Pa by a vacuum pump. On the other hand, the substrate 15 is fixed to the substrate holder 14 by the anti-adhesion mask 16 and is transported by the substrate holder transfer unit 11 to a position facing the target 6. Then, the substrate 15 is placed in the film formation chamber 1 by pressing the substrate holder transfer unit 11 against the film formation chamber 1 by the shaft 12.

Next, the discharge gas 5 is introduced into the film forming chamber 1 through the gas introducing means 3 connected to the film forming chamber 1,
Is maintained at about 0.2 to several Pa. In this state, by supplying power from a DC or high-frequency discharge power supply 9 to the sputtering electrode 7 to which the target 6 is attached, plasma is generated, and a sputtering phenomenon occurs.
A thin film is formed on the substrate 15 placed on the substrate holder 14 by the sputtered particles emitted from the target 6.

When the substrate 15 is continuously processed,
When the film that has accumulated on the deposition-preventing plate 17 becomes thicker, the deposition-preventing plate 17 is replaced.

FIG. 2 shows the vicinity of the substrate 15 of FIG. 1. The outer dimensions of the deposition-preventing mask 16 are the same as the outer dimensions of the target 6, so that the substrate 1 is
The part where the film adhesion is most remarkable other than the part 5 is not the deposition preventing plate 17 but the deposition preventing mask 16.

In the single-wafer sputtering apparatus, the substrate 15
When the predetermined film formation on the substrate is completed, the substrate holder transfer unit 11 moves to collect the film-formed substrate 15 and transport the next new substrate 15 to the film formation chamber 1. At this time, the deposition mask 16 is also transferred at the same time.

With the above configuration, film adhesion to the deposition-preventing plate 17 remaining in the film forming chamber 1 can be significantly reduced, so that the number of substrates 15 to be processed until the deposition-preventing plate 17 is replaced increases. Since the maintenance frequency of the apparatus can be extended, the operation rate of the apparatus can be increased.

The shape of the deposition-preventing plate 17 can be as shown in FIG. 2 (a) or (b), but since there is no portion facing the target 6, (b) is more preferable than (a).

In the illustrated example, the outer dimensions of the deposition-preventing mask 16 are the same as the outer dimensions of the target 6. However, the outer dimensions of the target 6 are reduced to 70% of the target dimensions. Substrate 1 including deposition mask 16
The size of the transfer system 5 may not be significantly increased, that is, the size may be 130% or less of the external dimensions of the target 6.

Preferably, in order to prevent peeling of the film from the deposition mask 16, the deposition mask 1 is transported in a vacuum.
It is preferable to provide a mechanism capable of replacing the 6.

(Second Embodiment) Next, a second embodiment of the sputtering apparatus of the present invention will be described with reference to FIG. Note that the internal configuration of the film forming chamber 1 is the same as that described in the first embodiment, and a description thereof will be omitted, and only different points will be described.

In FIG. 3, the film forming chamber 1 is disposed on three walls of the four peripheral walls of the rectangular transfer chamber 10, and the vacuum preparatory chamber 21 is disposed on one wall. The substrate holder 14 is configured to be supplied to and discharged from the substrate holder transfer unit 11. Reference numeral 22 denotes a rotation mechanism of the substrate holder transfer unit 11, which rotates in the direction of arrow 23.

In the sputtering apparatus configured as described above, the substrate 15 is supplied on the substrate holder 14 in advance as indicated by a white arrow 24, and mounted on the substrate holder 14 together with the anti-adhesion mask 16 in a vacuum or air. Is done. Thereafter, the substrate holder 14 in this state is conveyed to the pre-vacuum chamber 21 as indicated by a white arrow 25, and the rotation mechanism 22
The substrate 15 is rotated by 90 ° in the direction of 3 in FIG.
Are sequentially transported to the film forming chamber 1 to form a laminate of the same or different kinds of films.

According to the structure of this embodiment, the same effects as those of the first embodiment can be obtained, and a laminate can be formed on the substrate 15.

Although the number of the film forming chambers 1 is three, the number of the film forming chambers 1 is not limited to three.

[0038]

According to the sputtering apparatus of the present invention,
As described above, by setting the outer dimensions of the anti-adhesion mask provided on the outer periphery of the substrate to 70% or more and 130% or less of the outer dimensions of the target, film peeling from the anti-adhesion plate is prevented and the product yield is improved. In addition, the frequency of replacement of the attachment-preventing plate can be reduced to improve the operation rate of the apparatus.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view illustrating a schematic configuration of a sputtering apparatus according to a first embodiment of the present invention.

FIG. 2 is a partial cross-sectional view of the vicinity of a substrate of the sputtering apparatus of the embodiment.

FIG. 3 is a longitudinal sectional view illustrating a schematic configuration of a sputtering apparatus according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a schematic configuration of a conventional sputtering apparatus.

FIG. 5 is a partial cross-sectional view near a substrate of a conventional sputtering apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Film-forming chamber 3 Gas introduction means 5 Discharge gas 6 Target 7 Sputtering electrode 9 Discharge power supply 11 Substrate holder transfer part 14 Substrate holder 15 Substrate 16 Deposition mask 17 Deposition plate

 ────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Takashi Sueyoshi 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. 4K029 AA24 BB03 CA05 HA03 KA01 5F103 AA08 BB15 BB25 BB60 RR01 RR10

Claims (3)

[Claims] 1. A film forming chamber capable of evacuating the inside, a sputtering electrode disposed inside the film forming chamber and having a target serving as a film forming material, and a gas introducing means for introducing a discharge gas into the film forming chamber. A discharge power supply for supplying power to the sputtering electrode, a substrate holder transfer section for transferring the substrate holder on which the substrate is placed to the film forming chamber, and a deposition mask for preventing film adhesion to a part of the substrate. In a single-wafer sputtering apparatus provided with a deposition-preventing plate for preventing deposition of a film on an inner wall of a film chamber, the external dimensions of a deposition-prevention mask installed on the outer periphery of a substrate are 70% or more and 130% or more of the target external dimensions. A sputtering apparatus characterized by the following. 2. The method according to claim 1, further comprising the step of:
2. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is configured to be transported and exchangeable in a vacuum. 3. The sputtering apparatus according to claim 1, wherein the substrate and the deposition mask installed on the outer periphery of the substrate are simultaneously transported in a vacuum and exchangeable.