JP2002217391A - Laminated body manufacturing method and semiconductor device - Google Patents

Abstract

(57) Abstract: A conventional method for manufacturing a laminated body such as a semiconductor device in which layers and regions are sequentially formed on a substrate includes a step performed under extreme conditions such as high-temperature treatment. In some cases, the substrate on which the laminate is arranged and the members included in the laminate are limited. Therefore, a method of manufacturing a laminate that can be applied to the production of a laminate including various substrates and members is provided. A first separation layer, an intermediate layer, and a transfer object are sequentially formed on a first substrate, and the transfer object and a second separation layer formed on a second substrate are separated from each other by a first method. Adhesion is performed through the first adhesive layer. Next, by exposing the first separation layer to light, delamination in the first separation layer is induced, and the first substrate is detached. Next, a third substrate and the intermediate layer are bonded via a second bonding layer. Next, by heating, delamination in the second separation layer is induced, and the second substrate is detached.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a laminated body and a semiconductor device.

[0002]

2. Description of the Related Art A conventional method for manufacturing a laminated body such as a semiconductor device in which layers and regions are sequentially formed on a substrate includes a step performed under extreme conditions such as high-temperature processing. For example, a MOS element, which is one of the typical semiconductor devices, is manufactured by sequentially forming a semiconductor layer, a gate insulating layer, and a gate electrode on one substrate. The forming process usually requires high temperature treatment.

[0003]

However, in the conventional method for manufacturing a laminated body, the substrate on which the laminated body is arranged and the members included in the laminated body are sometimes limited. For example, it has been difficult to apply a conventional method for manufacturing a laminated body such as a semiconductor device to the manufacture of a semiconductor device using a material having a low softening point or melting point as a substrate or a member. Therefore, a first object of the present invention is to provide a method for manufacturing a laminate that can be applied to the production of a laminate including various substrates and members. A second object of the present invention is to obtain a semiconductor device which can support various uses.

[0004]

According to a first method of manufacturing a laminate of the present invention, a first separation layer is formed on a first substrate, and a thin film device is further formed on the first separation layer. Forming a transfer member including the transfer member, forming a second separation layer on a second substrate, and bonding the transfer member and the second separation layer via a first adhesive layer. And peeling off at least one of the inside of the first separation layer and the boundary surface with another layer in contact with the first separation layer by light irradiation, and From the side of the substrate 1
Transferring to the side of the second substrate, bonding the transfer target transferred to the side of the second substrate and the third substrate via a second adhesive layer, and heating the second substrate. At least one of the inside of the separation layer and the boundary surface with another layer in contact with the second separation layer, and the transferred body is moved from the side of the second substrate to the third substrate. Transferring to the side of the substrate. By using a desired substrate as the third substrate in the method for manufacturing such a laminate,
The manufactured laminate includes a desired substrate and can have desired properties and functions. For example, in a conventional method for manufacturing a laminate such as a semiconductor device, a plastic material which is difficult to use due to high temperature treatment is used in the third method.
This makes it possible to impart flexibility or flexibility to the laminate. Further, if a substrate including various devices is used as the third substrate, various functions can be imparted to the stacked body.

[0005] In the method of manufacturing a laminated body, the transfer is performed twice. For example, when the object to be transferred includes a vertically distinguishable structure such as a MOS element, the first transfer is performed.
A vertical positional relationship of the structure with respect to the substrate,
The upper and lower positional relationship of the structure with respect to the substrate can be matched.

The object to be transferred may be composed of a plurality of layers or regions. For example, an intermediate layer 30 described later may be included in the object to be transferred.

According to a second aspect of the present invention, there is provided a method of manufacturing a laminate according to the third aspect, further comprising the step of removing the first adhesive layer.
2. The method of manufacturing a laminate according to claim 1, wherein the first adhesive layer is finally left on the object to be transferred. Various substrates such as electrodes and wiring layers can be further arranged on the body.

[0008] A third method for manufacturing a laminate according to the present invention is the method for manufacturing a laminate according to claim 2, wherein the first adhesive layer is soluble in a solvent. In the method for manufacturing such a laminate, the first adhesive layer can be removed by a method of applying a solvent or a method of dipping in a solvent, so that the first adhesive layer can be removed by mechanical removal such as polishing or removal by plasma etching. Damage to the transfer object can be reduced.

According to a fourth aspect of the present invention, in the method for producing a laminate according to the third aspect, the first adhesive layer is water-soluble. In the method for manufacturing a laminate, water can be used to remove the first adhesive layer. Therefore, the method for manufacturing a laminate reduces the load on the environment and costs as compared with the case where an organic solvent is used. It has the advantage that it can be done.

According to a fifth aspect of the present invention, in the method of manufacturing a laminate according to any one of the first to fourth aspects, the bonding force is reduced or eliminated by heating the second separation layer. It has characteristics. According to such a method for manufacturing a laminate, peeling in the second separation layer can be selectively caused by heating.

According to a sixth aspect of the present invention, in the method of manufacturing a laminate according to any one of the first to fifth aspects, bubbles are contained in the second separation layer. And By expanding bubbles in the second separation layer by heating, a bonding force or an adhesion force in a layer of the second separation layer or at an interface between the second separation layer and another layer is reduced. be able to.

According to a seventh aspect of the present invention, there is provided a method for manufacturing a laminate according to any one of the first to sixth aspects, wherein the object to be transferred includes a thin film transistor. The manufacturing method according to any one of claims 1 to 6 can be applied to a laminate including various members and substrates,
By utilizing this feature, for example, a thin film transistor including a substrate or a member made of a plastic material or a glass material can be manufactured, and the thin film transistor can be used for various applications.

A semiconductor device according to the present invention is a semiconductor device manufactured by using the method for manufacturing a laminate according to any one of claims 1 to 7. The semiconductor device manufactured by the method for manufacturing a laminate having the above-described features is suitable for a display device such as a liquid crystal display device, an electrophoretic display device, and an electroluminescent display device, and an IC card and a memory card. It is a semiconductor device.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described. First, an outline of an embodiment is shown in FIGS.
It is explained along.

As a first step, a first separation layer 20 is formed on the first substrate 10 (FIG. 1), and an intermediate layer 30 and a transfer layer 40 are formed on the first separation layer 20. (FIG. 2). As a second step, a second separation layer 60 is formed on the second substrate 50 (FIG. 3). As the third step, the second
Of the separation layer 60 and the transfer receiving layer 40 to the first adhesive layer 70
(FIG. 4). As a fourth step, the first separation layer 20 is irradiated with the irradiation light 200 through the first substrate 10 (FIG. 5) to cause separation of the first separation layer 20,
The transfer target layer 40 is placed on the second substrate 50 from the first substrate 10 side.
(FIG. 6). As a fifth step, the intermediate layer 30
And the third substrate 80 are bonded via an adhesive layer 90 (FIG. 7). As a sixth step, by heating (FIG. 8), the second separation layer 60 is peeled off, and the transfer layer 4 is removed.
0 is moved from the side of the second substrate 50 to the side of the third substrate 80 (FIG. 9). As shown in FIG. 10, after the above steps are completed, the first layer remaining on the surface of the transfer target layer 40 is removed.
May be removed.

Next, specific experimental conditions will be described in detail.

[First substrate 10] In the fourth step, the first substrate
Light 200 from the side of the substrate 10 to the first separation layer 20.
Therefore, the first substrate 10 desirably transmits the light 200 sufficiently. Specifically, the first substrate 10 preferably transmits 10% or more of the light 200, and more preferably transmits 50% or more. When the first separation layer 20 described later is made of amorphous silicon, ultraviolet light using an excimer laser or the like as a light source can be used as the light 200. In such a case, the first substrate 10 As a constituent material, a material that sufficiently transmits ultraviolet light, for example, glass or quartz glass is preferably used. The thickness of the first substrate 10 is not particularly limited, but is preferably about 0.1 to 5.0 mm, and preferably 0.5 to 1.0 mm in consideration of the balance between the mechanical strength of the substrate and the amount of light transmitted. It may be more preferable that it is 5 mm. If the light transmittance of the first substrate 10 is sufficiently high, the thickness may exceed the upper limit. Further, in order to uniformly irradiate the first separation layer 20 with light, the thickness of the first substrate 10 is
Preferably it is uniform. First separation layer 20, intermediate layer 30, and transferred layer 4 formed on first substrate 10
In the case where high-temperature treatment is required when forming any one of 0, the first substrate 10 preferably has sufficient heat resistance.

[First Separation Layer 20] As a material used for the first separation layer 20, for example, the following materials A to F can be used.

A. Amorphous silicon (a-Si) This amorphous silicon may contain hydrogen. In this case, the content of hydrogen is preferably about 1 at% or more, more preferably about 2 to 20 at%. As described above, when a predetermined amount of hydrogen is contained, hydrogen is released by light irradiation, and an internal pressure is generated in the first separation layer 20, which serves as a force for promoting separation. The content of hydrogen in amorphous silicon depends on film forming conditions, for example, gas pressure in CVD, gas atmosphere, gas flow rate, temperature, substrate temperature,
Alternatively, it can be adjusted by appropriately setting conditions such as input power during plasma generation.

B. Various oxide ceramics such as silicon oxide or silicic acid compound, titanium oxide or titanic acid compound, lanthanum oxide or lanthanic acid compound, dielectric, ferroelectric or semiconductor Silicon oxide includes SiO, SiO ₂ , Si ₃ 0 _2. Examples of the silicic acid compound, for example _{K 2 SiO 3, Li 2 SiO} 3, CaSi
O ₃ , ZrSiO ₄ and Na ₂ SiO ₃ are mentioned. Titanium _{oxide, TiO, Ti 2 0 3,} TiO 2 , and examples of titanate compounds, for _{example, BaTiO 4, BaTiO 3, Ba} 2 Ti 9 0 20, BaTi
_{5 0 11, CaTiO 3, SrTiO3} , PbTiO 3, MgTiO 3, ZrTiO 2, SnTi
O ₄ , A ₁₂ TiO ₅ , and FeTiO ₃ are mentioned. Examples of zirconium oxide include ZrO ₂ , and examples of zirconate compounds include BaZrO ₃ , ZrSiO ₄ , PbZrO ₃ , MgZrO ₃ , and K ₂ ZrO ₃ .

C · PZT [Pb (Zr, Ti) O ₃ ]], PLZT [(Pb, La)
D. Ceramics or dielectrics (ferroelectrics) such as (Zr, Ti) O ₃ ]], PLLZT, PBT, etc. Nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride, etc. Organic polymer material As an organic polymer material, one CH-,
-CO- (ketone), -CONH- (amide), -NH- (amino), -COO- (ester), -N = N- (azo), -CH
= N- (imide). Further, an organic polymer in which an aromatic hydrocarbon such as benzene or naphthalene is incorporated to improve the amount of light absorption can also be used.

Specific examples of such an organic polymer material include, for example, polyolefin such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), and polyether sulfone. (PE
S), polyester terephthalate (PET) and epoxy resin.

F. Metal As the metal, for example, Al, Li, Ti, Mn, In, Sn, Y, L
a, Ce, Nd, Pr, Gd, Sm or at least one of these
Alloys containing seeds.

The thickness of the first separation layer 20 varies depending on various conditions such as the composition and material of the first separation layer, the laminated structure, and the forming method, but is usually preferably about 1 nm to 20 μm, preferably 10 nm. And more preferably about 2 μm.
More preferably, it is about 0 nm to 1 μm.

The method of forming the first separation layer 20 can be appropriately selected according to various conditions such as a film composition and a film thickness. For example, CVD (MOCVD, low pressure CVD, ECR-CV
D, including plasma CVD), evaporation, molecular beam evaporation (M
B), sputtering, ion plating, PVD
And various plating methods such as electroplating, immersion plating, dipping, and electroless plating, Langmuir-Blodgett (LB) method, spin coating, spray coating, roll coating and other coating methods, and various printing methods , Transcription method,
An ink jet method, a powder jet method, and a combination of two or more methods selected from the above methods can also be used.

For example, when the composition of the first separation layer 20 is amorphous silicon (a-Si), it is preferable to form the film by a CVD method, especially a low pressure CVD method or a plasma CVD method. When the first separation layer 20 is made of a ceramic by a sol-gel method or when it is made of an organic polymer material, it is preferable to form the film by a coating method, particularly a spin coating method.

As shown in FIG. 6, after irradiating the first separation layer 20 with light, part or all of the first separation layer 20 may adhere to the intermediate layer 30 in some cases. In this case, for example, a method such as cleaning, etching, ashing, polishing, or a combination thereof is applied to form the intermediate layer 3.
Deposits on the zero can be removed.

In some cases, part or all of the first separation layer 20 may adhere to the first substrate 10. In this case as well, by performing the same treatment, it is possible to remove deposits from the first substrate 10. However, as a result, an expensive material such as quartz glass or a rare material is used as the first substrate 10. In this case, the first substrate 10 can be reused, which is advantageous in cost.

[Intermediate Layer 30] The intermediate layer 30 disposed in contact with the first separation layer 20 is formed for various purposes, for example, a protective layer that physically or chemically protects the transferred layer 40. , An insulating layer, a conductive layer, a laser light shielding layer, a barrier layer for preventing migration of impurities, and a layer functioning as a reflective layer. When the intermediate layer 30 is an insulating film, for example, SiO ₂ , SiO, and SiN can be used. The thickness of the intermediate layer 30 can be appropriately selected according to a desired function, but is usually preferably from 10 nm to 5 μm, and more preferably from about 40 nm to 1 μm. In some cases, the transfer layer 40 may be formed directly on the first separation layer 20 without forming the intermediate layer 30.

[Transferred Layer 40] As shown in FIG. 2, the transferred layer 40 is, for example, a thin film transistor (TFT).
(K portion of the transferred layer 40). This TFT
Are, for example, a source region 102, a drain region 104, a channel region 100, a gate insulating film 106, and a gate electrode 10 formed by introducing an n-type impurity into a polysilicon layer.
8, an interlayer insulating film 110, a source electrode 112, and a drain electrode 114. Devices other than the TFT included in the transfer layer 40 include, for example, a thin-film diode, a photoelectric conversion element (photosensor, solar cell) composed of a silicon PIN junction, a silicon resistance element, other thin-film semiconductor devices, and electrodes (for example, , ITO, transparent electrodes such as mesa film), switching elements, memories, actuators such as piezoelectric elements, micromirrors (piezoelectric thin film ceramics), magnetic recording thin film heads, coils, inductors, thin magnetically permeable materials and their combinations Examples include micro magnetic devices, filters, reflective films, and dichroic mirrors. Of course, even if the transferred layer 40 includes various devices other than the above-described examples, the method for manufacturing a laminate of the present invention can be applied.

[Second Substrate 50] In the present embodiment, the second substrate 50 has sufficient strength to temporarily fix the layer 40 to be transferred, and heat for peeling off the second separation layer 60. Any material can be used as long as it can endure. As detailed later,
By appropriately selecting the material of the second separation layer, the second separation layer can be peeled off with minimum heating, so that the second substrate 50 may not be required to have much heat resistance. When the photocurable material is photocured to form the first adhesive layer 70, which will be described in detail later, it is preferable that the substrate 50 sufficiently transmit light for curing the photocurable material. Therefore,
As the second substrate 50, for example, an inexpensive material such as a glass material or a resin material can be used.

Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potassium lime glass, lead (alkali) glass, barium glass, and borosilicate glass. this house,
Materials other than silicate glass are preferable because they are relatively easy to mold and process and are less expensive than silicate glass.

The resin material may be either a thermoplastic resin or a thermosetting resin. Examples thereof include polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, and the like. Modified polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide,
Polyimide, polyamide imide, polycarbonate, poly (4-methylpentene-1), ionomer, acrylic resin, polymethyl methacrylate, acryl-styrene copolymer (AS resin), butadiene-styrene copolymer, polio copolymer ( EVOH), polyester such as polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polycyclohexane terephthalate (PCT), polyether, polyether ketone (PEEK), polyetherimide, polyacetal, polyphenylene oxide, modified polyphenylene oxide, Polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins, styrene, polyolefin, polyvinyl chloride, polyurethane, polyurethane Various thermoplastic elastomers such as raw rubber and chlorinated polyethylene, epoxy resin, phenol resin, urea resin, melamine resin, noncorrosive polyester, silicone resin, polyurethane, etc., or copolymers and blends mainly containing these And a polymer alloy, and one or more of these can be used (for example, as a laminate of two or more layers).

[Second Separation Layer 60] As the second separation layer 60, an inorganic material such as porous ceramics and porous silicon, and a resin material containing bubbles therein can be used. In particular, the resin material containing bubbles is 80 to 150.
It is preferable because bubbles expand at a relatively low temperature of about ° C, and a remarkable decrease in adhesive strength occurs. Specifically, for example, Nitto Denko's Riba Alpha (trade name) can be used. The second separation layer can be used together with a first adhesive layer 70 described later in detail.

[First Adhesive Layer 70] The material used for the first adhesive layer 70 is, for example, a reaction-curable adhesive,
Various curable adhesives such as a photocurable adhesive such as a thermosetting adhesive and an ultraviolet curable adhesive, and an anaerobic curable adhesive can be used. In particular, it is preferable to use a photocurable adhesive from the viewpoint of reducing the tact time in the process. As the photocurable material, for example, an epoxy-based, acrylate-based, or silicone-based photocurable material can be used. When it is necessary to finally remove the first adhesive layer 70, the first adhesive layer 70 is preferably soluble in a solvent, particularly preferably water-soluble. As a material satisfying the above conditions, for example, Three Bond 304
6 (trade name) can be used.

[Irradiation light 200] The irradiation light 200 that induces separation in the first separation layer 20 includes the first separation layer 20
X-ray, ultraviolet, visible light, infrared (heat ray), millimeter wave, microwave, electron beam, radiation (α wave, β
(Waves, γ-waves), or light of various wavelengths or electromagnetic waves. When it is necessary to control the irradiation area or the irradiation area, it is preferable to use a laser which has excellent directivity and oscillates light or electromagnetic waves of these wavelengths. As lasers, for example, various gas lasers,
Examples include a glass laser and a semiconductor laser, and more specifically, an excimer laser, an Nd-YAG laser, an Ar laser, a Kr laser, a CO ₂ laser, a CO laser, and a He-Ne laser.

When high-power ultraviolet light using an excimer laser as a light source is used to irradiate the first separation layer 20, a peeling phenomenon in the first separation layer 20 can be induced in a very short time. First separation layer 20 such as temperature rise, deterioration or damage of an adjacent layer such as transfer layer 40
, A secondary effect induced by light irradiation on the substrate can be reduced. The energy density of the irradiation light is 10
50005000 mJ / cm ^2, preferably 100-500 mJ / c
it is more preferable to be m ² approximately. The irradiation time is 1
It is preferably set to about 1000 nanoseconds, and more preferably about 10 to 100 nanoseconds.

The irradiation light 200 does not necessarily need to be irradiated from a direction perpendicular to the first separation layer 20, but may be irradiated from a direction forming a predetermined angle with respect to the first separation layer 20. Further, the area of the first separation layer 20 is
When the irradiation area is larger than one irradiation area, the entire area of the first separation layer 20 can be irradiated with the irradiation light 200 in plural times. The same location may be irradiated more than once. Further, the same region or different regions may be irradiated with irradiation light of different types and different wavelength regions twice or more.

[Second Adhesive Layer 90] As the second adhesive layer 90, a material basically similar to that of the first adhesive layer 70 can be used.

[Third Substrate 80] As the third substrate 80,
As materials that can be used, various materials described in the description of the second substrate 50 can be used.
In particular, by using a resin material excellent in lightness, flexibility, elasticity, and the like, it is possible to impart these mechanical properties to a manufactured laminate, and to reduce the material cost and the manufacturing cost. Have. The third substrate 80
Is a device that constitutes an independent device, such as a liquid crystal cell, or a device that constitutes part of a device, such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. It may be. The third substrate 80 may be, for example, a material such as metal, ceramics, stone, wood, paper, or the like, and may further include a clock face, a car windshield, an air conditioner surface, and a printed circuit board. , A column, a ceiling, a window glass or the like.

[0041]

As described above, by using the transfer technique according to the present invention, it is possible to transfer a thin film device onto another substrate suitable for its use while maintaining the lamination order formed on the substrate. It becomes possible. For example, a material that cannot be directly formed or is not suitable for forming a thin film, a material that is easy to mold, a material horizontally laid with an inexpensive material, or a large object that is difficult to move. It can be formed by transfer.

In particular, the transfer destination substrate (for example, the third substrate 8
0), such as various synthetic resins and glass materials having a low melting point,
A material having inferior properties such as heat resistance and corrosion resistance as compared with the material of the manufacturer substrate (first substrate) can be used. Therefore, for example, when manufacturing a thin film device in which a thin film transistor is formed on a transparent substrate, a quartz glass substrate having excellent heat resistance is used as a manufacturer substrate, and various synthetic resins and glass materials having a low melting point are used as a transfer destination substrate. By using an inexpensive and easy-to-process material, it is easy to stably manufacture an inexpensive thin-film device. It is also possible to manufacture a novel thin-film device that is lightweight and flexible.

Further, according to the embodiment of the present invention, as described above, the second substrate can be quickly separated. This makes it possible to transfer a large-area thin-film device efficiently in a short time, which is effective in reducing the manufacturing cost.

[Brief description of the drawings]

FIG. 1 is a diagram showing an embodiment of a method for manufacturing a laminate of the present invention.

FIG. 2 is a diagram illustrating an embodiment of a method for manufacturing a laminate of the laminate of the present invention.

FIG. 3 is a diagram illustrating an embodiment of a method for manufacturing a laminate of the present invention.

FIG. 4 is a diagram showing an embodiment of a method for manufacturing a laminate of the present invention.

FIG. 5 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.

FIG. 6 is a diagram showing an embodiment of a method for manufacturing a laminate of the present invention.

FIG. 7 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.

FIG. 8 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.

FIG. 9 is a diagram showing an embodiment of a method for manufacturing a laminate of the laminate of the present invention.

FIG. 10 is a diagram showing an embodiment of the method for manufacturing a laminate of the laminate of the present invention.

[Explanation of symbols]

 10, 50, 80 Substrate 20 First separation layer 30 Intermediate layer 40 Transfer layer 60 Second separation layer 70, 90 Adhesive layer

Claims (8)

[Claims] 1. A step of forming a first separation layer on a first substrate, and further forming a transfer object including a thin film device on the first separation layer; A step of forming a second separation layer; a step of adhering the transfer object and the second separation layer via a first adhesive layer; A step of causing peeling at at least one of a boundary surface of the first separation layer and another layer in contact with the first separation layer, and transferring the transfer target from the side of the first substrate to the side of the second substrate; Bonding the transfer target transferred to the side of the second substrate and a third substrate via a second bonding layer; and heating the inside of the second separation layer and the third substrate. At least one of the boundary surfaces between the second separation layer and the other layer in contact with the second separation layer. Method for producing a laminate comprising the steps, a to be transferred to the side of the third substrate from the side of the substrate. 2. The method for manufacturing a laminate according to claim 1, further comprising a step of removing said first adhesive layer. 3. The method for manufacturing a laminate according to claim 2, wherein the first adhesive layer is soluble in a solvent. 4. The method for manufacturing a laminate according to claim 3, wherein the first adhesive layer is water-soluble. 5. The laminate according to claim 1, wherein the second separation layer has a property that a bonding force is reduced or eliminated by heating. Manufacturing method. 6. The method for manufacturing a laminate according to claim 1, wherein air bubbles are present in the second separation layer. 7. The method for manufacturing a laminate according to claim 1, wherein the object to be transferred includes a thin film transistor. 8. A semiconductor device manufactured by using the method of manufacturing a laminate according to claim 1.