JP2002299372A - Semiconductor device, method of manufacturing semiconductor device, and method of mounting semiconductor device - Google Patents

Abstract

(57) [abstract] (with correction) [PROBLEMS] To reduce the thickness at the time of forming a module and to withstand shear stress due to expansion and contraction of a material in a plane direction. A semiconductor device has a surface electrode provided on a surface on which a semiconductor chip is formed, and is electrically connected to the surface electrode, and is formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device. Side electrode 10. Since the bonding load at the time of mounting can be reduced and no shear stress in the planar direction is applied to the semiconductor chip, a change in the characteristics of the semiconductor chip can be suppressed and breakage can be prevented. Further, the connection between the electrode of the semiconductor device and the substrate electrode can be reliably performed, and the connection reliability can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device, a method of manufacturing a semiconductor device, and a method of mounting a semiconductor device.
In particular, the present invention relates to a technique for reliably performing electrical connection while reducing a bonding load during mounting.

[0002]

2. Description of the Related Art Conventionally, various techniques for mounting a semiconductor chip on a substrate have been known. For example, as a mounting technique, a wire bonding method, a flip chip bonding method, or the like can be given. According to the wire bonding method, as shown in FIG. 13, a semiconductor chip 101 is fixed on a substrate 100 with an adhesive or the like.
The electrode 01 and the electrode 102 on the substrate 100 are connected in the air using a conductive wire 103 or the like. According to the flip-chip bonding method, as shown in FIG. 14, a conductive electrode (or a protruding electrode) 202 formed on a semiconductor chip 201 and an electrode on a substrate are aligned to perform alloy bonding or conductive bonding. Particles, conductive adhesive 20
The connection is made by mechanical contact using 3 or the like.

[0003]

In the wire bonding method, as shown in FIG.
01 is mounted on a substrate 100, and after wire bonding, a semiconductor chip 101 including a conductive wire is applied and buried with a molding agent 104 in order to impart mechanical strength. As a result, there is a problem that the thickness of the module 105 as a whole increases.
Further, when the semiconductor chip 101 is used as a high-frequency circuit, there is a problem that the wire length is too long, which is not preferable in terms of high-frequency circuit characteristics. According to the flip-chip bonding method, since both the electrode 202 of the semiconductor chip 201 and the electrode on the substrate are arranged on a plane, as shown by arrows in FIG. There is a possibility that the material expands and contracts in the direction, a shear stress acts on the electrode joint due to a difference in linear expansion coefficient between the semiconductor chip material and the substrate material, a crack occurs in the electrode joint, and a conduction failure occurs.

Further, when the size of a semiconductor chip is increased and the number of electrodes is increased in order to increase the number of functions, the bonding load when mounting the semiconductor chip on the electrodes of the substrate increases, and stress is applied to the active surface of the semiconductor chip. In this case, the characteristics of the semiconductor chip are changed. In addition, when a semiconductor chip is mounted, a stress is applied to the substrate, so that the electrode portion of the previously mounted semiconductor chip is cracked. In addition, there is a problem that the thickness of the module is increased because the semiconductor chip is mounted on the substrate similarly to the wire bonding.
On the other hand, in a semiconductor chip mounting method of increasing the capacity and increasing the functionality of a semiconductor chip and connecting many input / output terminals from the semiconductor chip to a substrate, many input / output terminals are arranged on the semiconductor chip as projection electrodes. In this case, it is necessary to reduce the area of the electrodes and make the arrangement pitch finer, so that it is not possible to secure the area of the connection portions of the protruding electrodes so that sufficient mechanical strength can be obtained. There was a problem that had to be.

Further, there is a problem that a high technical level is required to form minute electrodes. In order to mount the planar electrodes of a semiconductor chip, which has been miniaturized and multi-pinned and the size of which has been increased, in a plane direction with respect to the electrodes on the substrate, a very large bonding load is required. However, there is a problem that an unnecessary stress is applied to the substrate. SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device and a method of manufacturing a semiconductor device which can reduce a thickness at the time of forming a module and withstand a shear stress caused by a material expansion and contraction in a planar direction. Another object of the present invention is to provide a mounting method capable of reducing a bonding load when mounting a semiconductor chip.

[0006]

In order to solve the above-mentioned problems, a semiconductor device has a surface electrode provided on a surface on which a semiconductor chip is formed, and is electrically connected to the surface electrode. And a side electrode formed in a groove shape on a vertical side surface. In this case, the side surface electrode can be configured such that at least the mounting surface side is formed in a tapered cross section.

Further, the method of manufacturing a semiconductor device includes an LSI forming step of forming a plurality of LSIs together with a surface electrode on a wafer, a punching step of forming a side electrode forming hole near the surface electrode, A connection step of electrically connecting the hole and the surface electrode, and cutting the wafer at the side electrode forming hole portion so that the side electrode forming hole after wafer cutting becomes a predetermined side electrode. And a cutting step for separating into a plurality of semiconductor chips. In this case, in the punching step, the punching may be performed by laser light from the LSI forming surface side of the wafer to the other surface.

The connecting step includes a coating step of applying an insulating coating to a surface on which the LSI is formed, an insulating removing step of removing a predetermined portion of the surface electrode of the insulating coating, and a step of removing the insulating coating. A plating step of conducting the surface electrode and the side-surface electrode forming hole by plating.

Further, in a semiconductor device mounting method for mounting a semiconductor device having a side surface electrode formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, a housing for housing the semiconductor device on the substrate side A concave portion, an overhang wiring pattern projecting from the substrate surface in a cantilever manner toward the center of the accommodation concave portion, and disposed at a position corresponding to the side surface electrode; The overhang pattern and the side electrode are electrically connected by pushing the semiconductor device into the housing recess at a predetermined pressure.

In a semiconductor device mounting method of mounting a semiconductor device having a side electrode formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, the semiconductor device is housed on the substrate side. A housing recess, and a substrate side electrode formed by vertically cutting or cutting a through-hole provided at a position corresponding to the side electrode prior to forming the housing recess, and provided perpendicular to the substrate. The semiconductor device is housed in the housing recess, and conduction between the side electrode of the semiconductor device and the side electrode on the substrate side is conducted by a conductive adhesive.

In a semiconductor device mounting method for mounting a semiconductor device having a side electrode formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, the semiconductor device is housed on the substrate side. Housing recess, and a substrate side electrode formed by vertically cutting or cutting all or a part of a through hole provided at a position corresponding to the side electrode prior to forming the housing recess, The semiconductor device is housed in the housing recess perpendicularly to the substrate, and conduction is provided between a side electrode of the semiconductor device and the substrate side electrode by a conductive adhesive.

In a semiconductor device mounting method for mounting a semiconductor device having side electrodes formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, the semiconductor device is housed on the substrate side. A receiving recess is provided, and an inner wiring pattern in the receiving recess and a surface wiring pattern on the surface of the substrate are connected by a conductive wire in association with a position corresponding to the side surface electrode, and the semiconductor device is vertically attached to the substrate. It is characterized in that the conductive wire and the side electrode are electrically connected by pushing the conductive wire into the housing recess with a predetermined pressure.

[0013]

Next, a preferred embodiment of the present invention will be described with reference to the drawings. [1] Manufacturing of Semiconductor Chip First, the manufacturing process of the semiconductor chip will be described. [1.1] LSI Forming Step First, an LSI is formed on a Si wafer by the same process as usual. The LSI forming process includes a cleaning process, a diffusion process, a thin film forming process, and a patterning process. First, in the cleaning step, cleaning is performed to keep the wafer in a clean state. The diffusion step is performed for a pn junction step and impurity profile control. In the thin film forming step, a silicon nitride film, polycrystalline silicon, an aluminum electrode including a surface electrode, and the like are formed. The patterning step includes an exposure step and an etching step. In the exposure step, the resist applied on the silicon substrate is exposed and developed to form a predetermined resist pattern. In the etching step, the underlying film is etched using the resist pattern in the exposure step as a mask to form a pattern. Hereinafter, a plurality of LSIs are formed on the wafer by repeating the cleaning step, the diffusion step, the thin film forming step, and the patterning step.

[1.2] Drilling Step FIG. 1 is an external perspective view of a wafer on which an LSI is formed.
Next, in the wafer 2 on which a plurality of LSIs 1 are formed,
As shown in FIG. 2, a side electrode is formed in a region near an electrode (surface electrode) 3 formed in a peripheral portion of the LSI 1, at a position corresponding to each electrode, and along a virtually provided dicing line DL. The forming hole 4 is formed by punching. After drilling the side electrode forming hole, as shown in FIG.
Then, the insulating coating 5 for the side electrode forming holes is performed.

[1.3] Plating Step Next, as shown in FIG. 3B, the insulating coating on all or a part of the surface electrode is removed by laser processing or the like. Then, as shown in FIG. 3C, a plating process is performed on the surface electrode and the side surface electrode forming hole by using a general electrode plating material 6, and both are brought into a conductive state. Next, a predetermined coating process such as a polyimide coating is performed on the holes for forming the surface electrodes and the side electrodes.

[1.4] Dicing Step Next, dicing is performed to separate the wafer 2 into semiconductor chips. In this case, the wafer 2 is diced along a straight line (shown as a dicing line DL in FIG. 2) passing through the center point of the side electrode forming hole 4 to obtain a semiconductor chip 20 (see FIG. 4). As a result, the side-surface electrode forming hole 4 is divided into two equal parts, and the side-surface electrode 10 is formed. FIG. 4 shows an external perspective view of the side electrode. As shown in FIG. 4, the side surface electrode 10 has a shape obtained by splitting bamboo in half. If it is necessary to reduce the thickness of the obtained semiconductor chip 20, mechanical polishing or chemical polishing is performed on the surface (the back surface of the semiconductor chip; mounting surface) 20A of the wafer 2 facing the LSI forming surface before dicing. By performing the application, the thickness can be reduced. In the half dicing state, the thickness can be reduced by subjecting the surface 20A to mechanical polishing or chemical polishing after dicing.

[2] Mounting of Semiconductor Chip on Substrate Next, mounting of the semiconductor chip on the substrate will be described for each substrate. [2.1] Case of Flexible Board First, the case where the board to be mounted is a flexible board will be described. As shown in FIGS. 5A and 5B,
When the mounting destination of the semiconductor chip 20 is the flexible substrate 30, the wiring pattern 31 of the flexible substrate 30 is used.
Is an overhang pattern arranged at a position corresponding to the side surface electrode 10 of the semiconductor chip 20. Wiring pattern 3
Copper (Cu), nickel (Ni), gold (Au), or the like is used as the material of (1). Then, the semiconductor chip 20
While aligning the semiconductor chip 20 with the tool TL supporting the method by suction or the like (indicated by an arrow in FIG. 5A).
And mounting while applying a predetermined pressure.

In this case, the side electrode 10 of the semiconductor chip 20 and the wiring pattern (overhang pattern) 31 of the flexible substrate 30 are brought into contact as shown in FIG. Further, as shown in FIG. 7A, when the side electrode forming hole 4 is formed so that the shape of the side electrode on the mounting surface side of the semiconductor chip at the time of drilling is tapered, FIG. As described above, the mounting surface side of the side electrode 10 has a tapered shape, and as shown in FIG. 8, the side electrode 10 of the semiconductor chip 20 and the wiring pattern 31 (overhang pattern) of the flexible board 30 are more reliably electrically connected. Connection state. In order to form such a tapered side surface electrode forming hole 4, L
The perforation may be performed with a laser beam of a predetermined output from the SI forming surface side. Wiring pattern (overhang pattern)
31 is formed of a material having high elasticity, and a wiring pattern (overhang pattern) 31 by mounting the semiconductor chip 20 is formed.
It is also possible to improve the reliability of the electrical connection by the repulsive force accompanying the deformation of. Furthermore, it is also possible to apply a solder plating to the wiring pattern (overhang pattern) 31 in advance, and to perform soldering with the side surface electrode 10 to secure electrical connection.

[2.2] Forming a Through-Through Hole in a Ceramic Substrate Next, a case where a substrate to be mounted is a ceramic substrate and a through-hole is formed in this ceramic substrate will be described with reference to FIG. . As shown in FIG. 9, when forming a surface layer substrate 41 which is the outermost layer of a multilayer ceramic substrate 40 in a green state (before firing), a through-hole 42 connected to the next layer is formed, and the semiconductor chip of the through-hole 42 is formed. The substrate-side side surface electrode 43 is formed by extracting half of the 20 side. Thereafter, the surface layer substrate 41 punched out at a portion corresponding to the semiconductor chip mounting concave portion 44.
Is bonded to a substrate 45 constituting another layer containing, and fired to form a multilayer ceramic substrate 40. Then, as shown in FIG. 9, an anisotropic conductive adhesive 46 containing conductive particles is provided between the side electrode 10 of the semiconductor chip 20 and the substrate side electrode 43.
To make electrical connection. As a result, the semiconductor chip 2
Since there is no need to put the anisotropic conductive adhesive 46 between the substrate 0 and the substrate 45 laminated next to the surface layer substrate 41,
Since the bonding load at the time of mounting can be reduced, and unnecessary stress is not applied to the semiconductor chip 20,
Changes in the characteristics of the semiconductor chip 20 can be suppressed, and breakage during mounting can be avoided. That is, anisotropic conductive adhesive 46 containing conductive particles is extruded in the lateral direction during semiconductor mounting, and is formed between anisotropic conductive adhesive 46 and substrate-side wiring or anisotropic conductive adhesive 46 and substrate surface. Since there is no need to push out the generated air bubbles, a large load is not applied to the semicircular chip 20, so that a change in the characteristics of the semiconductor chip 20 can be suppressed and breakage during mounting can be avoided.

[2.3] Case of Forming Through-Through Hole in Rigid Board Next, a case where a substrate to be mounted is a rigid board and a through-hole is formed in this rigid board is shown in FIG.
0 will be described. First, as shown in FIG. 10, a through-hole 51 is formed to penetrate all layers or a predetermined layer of the multilayer rigid substrate 50, and a through-hole 51 is formed by mechanical cutting to form a recess 52 for mounting a semiconductor chip. Hole 51 to about half of the depth direction, and
Half of the through-hole 51 on the side where the semiconductor chip 20 is arranged is cut off. Thereby, the through-hole 51 is
The substrate side electrode 53 is formed. Then, as shown in FIG. 10, the side electrode 10 of the semiconductor chip 20 and the substrate side electrode 53 are connected via an anisotropic conductive adhesive 54 containing conductive particles. As a result, it is not necessary to insert the anisotropic conductive adhesive 54 between the semiconductor chip 20 and the substrate surface 50A facing the semiconductor chip 20 as in the case of the ceramic substrate described in [2.2]. Therefore, the bonding load at the time of mounting can be reduced, and unnecessary stress is not applied to the semiconductor chip 20, so that a change in characteristics of the semiconductor chip 20 can be suppressed and breakage can be prevented.

[2.4] Case of Forming Inner-Layer Through Hole (Non-Through-Through Hole) on Substrate Subsequently, the substrate to be mounted is a ceramic substrate or a rigid substrate, and a case where an inner-layer through hole is formed on this substrate is shown in FIG. This will be described with reference to FIG. First, a multilayer substrate 6 which is a multilayer ceramic substrate or a multilayer rigid substrate.
An inner-layer through hole 61 is formed from the surface substrate No. 0 to a predetermined inner-layer substrate, and the surface substrate and the inner-layer substrate are electrically connected. Then, in the case of a ceramic substrate, substrates constituting each layer including a substrate obtained by punching out a portion corresponding to the concave portion 62 for mounting a semiconductor chip are laminated and fired to obtain a multilayer ceramic substrate. In the case of a rigid substrate, the concave portion 62 for mounting a semiconductor chip is formed by mechanical cutting. In this case, the substrate side surface electrode 63 is formed by shaving off a half of the inner layer through hole 61 on the semiconductor chip 20 side. Then, as shown in FIG. 11, between the side surface electrode 20 of the semiconductor chip 20 and the substrate side surface electrode 63 formed using the inner layer through hole via an anisotropic conductive adhesive 64 containing conductive particles. Connecting.

As a result, [2.2] and [2.3]
Semiconductor chip 20 and the semiconductor chip 20 in the same manner as in the case of the ceramic substrate or the rigid substrate described in the section.
Between the substrate surface 65 and the anisotropic conductive adhesive 6
There is no need to enter 4. Accordingly, the bonding load at the time of mounting can be reduced, and unnecessary stress is not applied to the semiconductor chip 20, so that a change in the characteristics of the semiconductor chip 20 can be suppressed and breakage can be prevented.

The anisotropic conductive adhesive 5 containing conductive particles
As a method other than the method of connecting via the wiring 4, as shown in FIG. 12, the surface wiring pattern 71 and the inner wiring pattern 72 are connected by a wire 73 using a wire bonding apparatus, and when the semiconductor chip 20 is mounted, 73 is the side electrode 10 on the semiconductor chip side and the inner layer wiring pattern 72
(Substrate). As a result, the side electrode 10 of the semiconductor chip 20 and the wire 73 are brought into contact with each other as shown in FIG. FIG. 12 shows a case where the wire 73 is first connected to the surface wiring pattern 71 side and then connected to the inner wiring pattern 72 side.
It is also possible to configure to connect first to the two sides. Further, in each of the above configurations, an epoxy-based adhesive or the like may be inserted between the semiconductor chip 20 and the substrate 72 on which the semiconductor chip 20 faces, as necessary.

[3] Effects of Embodiment As described above, according to this embodiment, the bonding load during mounting can be reduced as compared with the conventional mounting method, and the shear stress in the plane direction can be reduced. Since it is not applied to the semiconductor chip, a change in the characteristics of the semiconductor chip can be suppressed and breakage can be prevented. Further, the side electrode on the semiconductor chip side and the side electrode on the substrate side are hardly affected by deformation (deformation in a plane direction) of the semiconductor chip or the substrate due to a temperature change or the like, and a crack or the like is hardly generated in a connection portion. Connection reliability can be improved. That is,
Conventionally, a shear stress was applied in a direction perpendicular to the electrodes.On the other hand, according to the present embodiment, the electrodes of the semiconductor chip and the substrate electrodes were connected in a form parallel to the shear stress. Therefore, the semiconductor chip or the substrate is less susceptible to deformation due to the elasticity. Further, the thickness of the module including the semiconductor chip can be reduced. In the above description, the case where the semiconductor chip is mounted on one surface of the substrate has been described. However, since the bonding load at the time of mounting the substrate is low, it is possible to mount the semiconductor chip on both surfaces of the substrate.

[0025]

According to the present invention, the bonding load at the time of mounting can be reduced, and a shear stress in the planar direction is not applied to the semiconductor chip. Damage can be prevented. Further, the connection between the electrode of the semiconductor device and the substrate electrode can be reliably performed, and the connection reliability can be improved.

[Brief description of the drawings]

FIG. 1 is an external perspective view of a wafer on which an LSI is formed.

FIG. 2 is an explanatory diagram of perforation of a side electrode forming hole.

FIG. 3 is an explanatory diagram of a method of manufacturing a semiconductor device for establishing conduction of a side electrode.

FIG. 4 is an external perspective view of a side electrode.

FIG. 5 is an explanatory view of mounting when a wiring pattern is an overhang pattern.

FIG. 6 is an explanatory diagram of a connection state between a side electrode and a wiring pattern (overhang pattern).

FIG. 7 is an explanatory diagram of a side surface electrode in which a mounting surface side has a tapered shape.

FIG. 8 is an explanatory view of mounting when the mounting surface side of the side electrode is formed in a tapered shape.

FIG. 9 is an explanatory view of mounting when a through-hole is formed in a ceramic substrate.

FIG. 10 is an explanatory view of mounting when a through-hole is formed in a rigid substrate.

FIG. 11 is an explanatory view of mounting when an inner layer through hole (non-through through hole) is formed in the substrate.

FIG. 12 is an explanatory diagram of mounting in a case where mounting is performed using a conductive wire.

FIG. 13 is a view for explaining a conventional wire bonding method.

FIG. 14 is a view for explaining a conventional flip chip bonding method.

FIG. 15 is a diagram illustrating a problem in a conventional flip chip bonding method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... LSI 2 ... Wafer 3 ... Surface electrode 4 ... Side electrode formation hole 5 ... Insulation coating 6 ... Plating 10 ... Side electrode 20 ... Semiconductor chip (semiconductor device) 30 ... Flexible substrate 31 ... Wiring pattern (overhang pattern) 40 ... Multilayer ceramic substrate 41 ... Surface layer substrate 42 ... Through through hole 43 ... Substrate side electrode 44 ... Recess for semiconductor chip mounting 45 ... Substrate 46 ... Anisotropic conductive adhesive 50 ... Multilayer rigid substrate 50A ... Substrate surface 51 ... Through through Hole 52: Semiconductor chip mounting recess 53: Substrate side electrode 54: Anisotropic conductive adhesive 60: Multilayer substrate 61: Inner layer through hole 62: Semiconductor chip mounting recess 63: Substrate side electrode 64: Anisotropic conduction Adhesive 71: Surface wiring pattern 72: Inner wiring pattern 73: Wire

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Claims (9)

[Claims] 1. A surface electrode provided on a surface on which a semiconductor chip is formed, and a side electrode formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device, being electrically connected to the surface electrode. A semiconductor device, comprising: 2. The semiconductor device according to claim 1, wherein the side surface electrode has a tapered cross section at least on the mounting surface side. 3. A plurality of LSs together with a surface electrode on a wafer.
An LSI forming step of forming I; a perforating step of perforating a side electrode forming hole near the surface electrode; a connecting step of electrically connecting the side electrode forming hole and the surface electrode; and after cutting the wafer. A cutting step of cutting the wafer at the side electrode forming hole portion and separating the wafer into a plurality of semiconductor chips so that the side electrode forming hole becomes a predetermined side electrode. Device manufacturing method. 4. The method of manufacturing a semiconductor device according to claim 3, wherein in the punching step, the hole is formed by laser light from an LSI forming surface side of the wafer to another surface. Method. 5. The method of manufacturing a semiconductor device according to claim 3, wherein the connecting step includes a step of performing an insulating coating on a surface on which the LSI is formed, and removing a predetermined portion of the insulating coating corresponding to the surface electrode. A method for manufacturing a semiconductor manufacturing apparatus, comprising: an insulation removing step; and a plating step of conducting by plating between the surface electrode from which the insulating coating has been removed and the side surface electrode forming hole. 6. A semiconductor device mounting method for mounting a semiconductor device having a groove-shaped side electrode on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, wherein the semiconductor device is housed on the substrate side. A receiving recess, and an overhang wiring pattern protruding from the substrate surface in a cantilever manner toward the center of the receiving recess, and disposed at a position corresponding to the side electrode; Wherein the semiconductor device is pressed into the housing recess with a predetermined pressure to electrically connect the overhang pattern to the side electrode. 7. A method for mounting a semiconductor device having a side electrode formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, wherein the semiconductor device is housed on the substrate side. A housing recess, and a substrate side electrode formed by vertically cutting or cutting a through-hole provided at a position corresponding to the side electrode prior to forming the housing recess, and provided perpendicular to the substrate. Wherein the semiconductor device is housed in the housing recess, and conduction between the side electrode of the semiconductor device and the side electrode on the substrate side is conducted by a conductive adhesive. 8. A method of mounting a semiconductor device having a side electrode formed in a groove shape on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, wherein the semiconductor device is accommodated on the substrate side. Housing recess, and a substrate side electrode formed by vertically cutting or cutting all or a part of a through hole provided at a position corresponding to the side electrode prior to forming the housing recess, Mounting the semiconductor device in the housing recess perpendicular to the substrate, and electrically connecting a side electrode of the semiconductor device and the side electrode on the substrate side with a conductive adhesive. Method. 9. A method for mounting a semiconductor device having a groove-shaped side electrode on a side surface substantially perpendicular to a mounting surface of the semiconductor device on a substrate, wherein the semiconductor device is accommodated on the substrate side. An accommodation recess is provided, and an inner wiring pattern in the accommodation recess and a surface wiring pattern on the surface of the substrate are connected by a conductive wire in correspondence with a position corresponding to the side surface electrode, and the semiconductor device is vertically attached to the substrate. A method for mounting a semiconductor device, wherein the conductive wire and the side electrode are electrically connected by pushing the conductive wire into a housing recess with a predetermined pressure.