JP2002299196A - Substrates for semiconductor manufacturing - Google Patents

Abstract

(57) [Problem] To provide a semiconductor manufacturing substrate for manufacturing a high-performance semiconductor element at low cost in a short time. SOLUTION: The thin portion 1 of the semiconductor substrate at the center is formed thin by etching, polishing or the like to reduce the loss, and the thick portion 2 at the periphery of the semiconductor substrate is formed at the center to maintain the mechanical strength. It is designed to be thicker. By using this and processing it in the same process as the conventional substrate and dividing it into chips by dicing, it is possible to produce a thin device required for low loss without breaking it during the production.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a substrate for semiconductor manufacturing.

[0002]

2. Description of the Related Art In a vertical semiconductor device, since the loss is basically reduced as the substrate becomes thinner, it is desirable to use a substrate having a minimum thickness necessary for withstand voltage. However, when a thin substrate (300 μm or less) is used, there are two problems: mechanical strength is weakened, the substrate is broken during the process, and the device is out of the usable range of the device. In particular, problems arise when a worker handles a wafer and when the transfer system of the apparatus and the exposure apparatus are focused.

Conventionally, a thick substrate is used at the expense of performance, or a special jig is used for each operation. However, there is a problem that expenses are a great burden.

[0004]

As described above, the conventional method has a problem that it is difficult to manufacture a high-performance semiconductor device, or it takes time and money.

In order to achieve the above object, the present invention uses a semiconductor substrate having irregularities, a semiconductor substrate bonding technique, and a jig serving as a base, and manufactures a high-performance semiconductor element at low cost in a short time. A manufacturing substrate is provided.

[0006]

The semiconductor manufacturing substrate according to the present invention is characterized in that one surface is flat and the other surface has a thick portion and a thin portion. The thick portion is provided on the outer peripheral portion or is formed by attaching another semiconductor substrate via an oxide film.

A semiconductor manufacturing substrate according to the present invention is characterized in that two semiconductor substrates are partially bonded via an oxide film. In addition, one of the semiconductor substrates has a groove formed in a part or the whole area of the unbonded portion, and a plurality of semiconductor substrates are bonded on the one semiconductor substrate. It is characterized by:

Further, the semiconductor manufacturing substrate according to the present invention has a semiconductor substrate-shaped mold, a mechanism for fixing a semiconductor, and a vacuum from the lower part of the apparatus for fixing the semiconductor substrate. It is characterized by having holes for passing through, and being manufactured using ceramics, quartz or a semiconductor substrate as a material.

[0009]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view of a semiconductor manufacturing substrate having unevenness according to a first embodiment. The central semiconductor substrate thin portion 1 is formed thin by etching or polishing in order to reduce loss, and the peripheral semiconductor substrate thick portion 2 is formed.
Is designed to be thicker than the center to maintain mechanical strength. By using this and processing it in the same process as the conventional substrate and dividing it into chips by dicing, it is possible to produce a thin device required for low loss without breaking it during the production.

FIG. 2 is a sectional view taken along the line aa 'in FIG. Such a shape is obtained by etching or polishing the center of the semiconductor substrate.

FIG. 3 shows an alternative to the shape shown in FIG.
3 is a cross-sectional view taken along the line aa ′ in FIG. In this configuration, the thick portion for reinforcement is bonded to another substrate (the thick portion 2 of the semiconductor substrate) by the bonding technique using the oxide film 3.
Pasted on. According to this method, polishing and etching are not required, and the device can be manufactured by a conventional technique. As described above, there are various methods for forming a shape as in the first embodiment.

FIG. 4 is a plan view of a semiconductor manufacturing substrate according to the first embodiment, showing a semiconductor element forming portion 4 which becomes a chip when an element is manufactured using the semiconductor manufacturing substrate of FIG. It is. The size of this chip varies depending on the intended use, and its shape is not only square, but also rectangular and circular.

FIG. 5 is a sectional view taken along the line bb 'in FIG. Thus, the element is formed on the thin portion 1 of the semiconductor substrate.

FIG. 6 shows a second embodiment in which a plurality of thin semiconductor substrate portions 1 are provided on the substrate shown in FIG. The shape of this substrate changes the shape of the polishing head,
It can be obtained by changing the shape of the etching mask. FIG.
Is mechanically strong because the region of the semiconductor substrate thick portion 2 is larger than in FIG. After the formation, it can be easily separated by dicing as in the conventional case.

FIG. 7 shows a third embodiment. This is obtained by changing the thin portion 1 of the semiconductor substrate in FIG. 6 from a round shape to a square shape. Also in this embodiment, the effect that the thin device can be processed by the same process as before is the same. A square shape can be obtained by etching or by polishing if the corners can be slightly rounded. In the case of forming a square element, this embodiment can make more chips, and if the number of chips is the same, a larger chip can be made.
After formation, they can be easily separated by dicing as in the past. The shape of such a thin part may be deformed.

FIG. 8 shows a fourth embodiment in which one chip is formed by one thin portion 1 of a semiconductor substrate. A substrate having this shape can also be manufactured by etching or polishing. This configuration has the largest mechanical strength because the thickest portion 2 of the semiconductor substrate can be obtained most.
However, on the other hand, there is a problem that when misalignment occurs in the pattern forming step, the pattern of the element is applied to the semiconductor substrate thick portion 2 and the yield is significantly deteriorated.
The method of separating into chips is the same as in FIG.

FIG. 9 shows a fifth embodiment, in which the semiconductor substrate thin portion 1 is extended from the structure of FIG. 7 to the peripheral portion while maintaining the mechanical strength. By expanding the area of the thin portion 1 of the semiconductor substrate, many elements can be obtained. The method of separating into chips is the same as in FIG.

FIG. 10 shows a sixth embodiment, in which a thin semiconductor substrate 5 and a base semiconductor substrate 6 are bonded together with an oxide film 3 interposed therebetween. According to this embodiment, in the electrode process on the back surface, the thin semiconductor substrate 5 is
After the oxide film is removed by etching. The shape at that time is either a wafer or a chip. At this time, if the base semiconductor substrate 6 is peeled off without being damaged, the base semiconductor substrate 6 can be reused. The method of forming and reusing the back electrode is the same in the following embodiments shown in FIGS. In this embodiment, a substrate can be easily formed because a conventional oxide film attaching technique can be used. Note that the film quality of the oxide film is not used as a part of the element, so that the film quality may be such that it can be attached.

FIG. 11 is a sectional view taken along the line cc 'in FIG. An oxide film 3 is attached between the thin semiconductor substrate 5 and the base semiconductor substrate 6.

FIG. 12 shows a seventh embodiment. In this structure, the oxide film 3 is previously partially removed by etching to shorten the oxide film etching time and alleviate the thermal stress of the high-temperature process, as compared with the structure of FIG. The region where the oxide film 3 remains is such that the two substrates (the thin semiconductor substrate 5 and the base semiconductor substrate 6) which are stuck are not separated. It is better to reduce the area of the oxide film 3
Time can be shortened when separating the substrate. Also in this embodiment, chips can be easily divided by dicing.

FIG. 13 shows an eighth embodiment. FIG.
The thin semiconductor substrate 5 is attached after the base semiconductor substrate groove 7 is formed in a portion of the second semiconductor substrate 6 that is not related to the bonding oxide film 3 by an etching or dicing machine or the like. As a result, the etchant penetrates to the back through the base semiconductor substrate groove 7, so that the etching liquid easily reaches the back of the substrate, and the thin semiconductor substrate 5 and the base semiconductor substrate 6 can be easily separated. After processing, it is divided into chips by dicing as in the conventional case.

FIG. 14 shows a ninth embodiment. This is a separation of the thin semiconductor substrate 5 for forming the element of the adhesive substrate shown in FIG. In order to achieve this configuration, two substrates (the thin semiconductor substrate 5 and the base semiconductor substrate 6) are bonded to each other and then separated by a dicing machine or the like, or a thin semiconductor substrate which is chip-shaped from the beginning. Stick 5 together. The shape and size of the thin semiconductor substrate 5 can be changed depending on the use of the element. The separation from the base semiconductor substrate 6 is performed by dissolving the oxide film with an etchant in the state of the substrate or by dissolving the oxide film after cutting into the chip state, as in FIG. With this configuration, the stress can be alleviated due to the difference in substrate thickness and the etching time can be reduced at the same time during the high-temperature process.

FIG. 15 is a sectional view taken along line dd 'in FIG. The oxide film 3 partially shown in FIG.
It may be on the entire surface of the table semiconductor substrate 6.

FIG. 16 shows a tenth embodiment, in which a base semiconductor substrate groove 7 is previously formed by etching or machining in addition to the bonding surface shown in FIG. 15, and then bonded together. This effect has the effect of reducing the stress during the high-temperature process and shortening the etching time as compared with FIG.

In FIGS. 10 to 16, the location of the oxide film may be any size and location as long as the thin semiconductor substrate 5 and the base semiconductor substrate 6 do not come off.

FIG. 17 shows an eleventh embodiment. In this manner, all or part of the element forming process can be performed using the semiconductor substrate base 9. In this embodiment, since there is no need to process the thin semiconductor substrate 5 itself, it is easy to obtain the substrate. The material of the semiconductor substrate base 9 is ceramics, a semiconductor substrate, or quartz if a high-temperature process is also performed by this. If not used in a high temperature process, these three also include plastics and the like. The portion one step higher than the edge is used for fixing the thin semiconductor substrate 5, and the groove is almost the same size and does not shift. Although there are various methods for removing, there is a method of providing a hole on the back surface of the semiconductor substrate base 9 and extruding it. After processing, it is divided into chips by dicing.

FIG. 18 is a sectional view taken along line ee 'in FIG. FIG. 19 is a plan view showing another method of fixing the semiconductor manufacturing substrate of FIG. Here, a nail-shaped thin semiconductor substrate holder 10 is used. In this embodiment, attachment and detachment can be performed more easily than in FIG.

FIG. 20 shows another shape different from the shape shown in FIG.
FIG. 18 is a cross-sectional view along the line ee ′ in FIG. 17. This is a method in which the inside of the vacuum groove 11 of the semiconductor substrate base 9 is evacuated and fixed. The method of applying a vacuum to the inside of the hole can be easily fixed by attaching the substrate to a jig in the vacuum chamber and closing the lid, and can be easily performed by removing the substrate in the vacuum chamber. In this method, since the fixing mechanism does not appear on the surface, there is no fear that the substrate is displaced by touching the fixing mechanism.

FIG. 21 shows another shape different from the shape shown in FIG.
FIG. 18 is a cross-sectional view along the line ee ′ in FIG. 17. This is a method of fixing the vacuum of the transfer system and the stage to the bottom of the thin semiconductor substrate 5 through the vacuum hole 12. It can be used in a part of the process such as an exposure apparatus. In addition, there are various fixing methods.

In addition, the present invention can be variously modified and applied to all semiconductor manufacturing substrates without departing from the scope of the invention.

[0032]

As described in detail above, since a thin semiconductor substrate is used in combination with a semiconductor substrate or a semiconductor substrate base partially formed thick, it does not crack and can be processed in the same process as a semiconductor substrate having a normal thickness. Can work. Also, thin elements can be made in a conventional manner.

[Brief description of the drawings]

FIG. 1 is a plan view of a semiconductor manufacturing substrate according to a first embodiment.

FIG. 2 is a sectional view taken along the line aa ′ in FIG.

FIG. 3 is a sectional view taken along the line aa ′ in FIG. 1;

FIG. 4 is a plan view of the semiconductor manufacturing substrate according to the first embodiment;

FIG. 5 is a sectional view taken along the line bb ′ in FIG. 4;

FIG. 6 is a plan view of a semiconductor manufacturing substrate according to a second embodiment.

FIG. 7 is a plan view of a semiconductor manufacturing substrate according to a third embodiment;

FIG. 8 is a plan view of a semiconductor manufacturing substrate according to a fourth embodiment;

FIG. 9 is a plan view of a semiconductor manufacturing substrate according to a fifth embodiment;

FIG. 10 is a plan view of a semiconductor manufacturing substrate according to a sixth embodiment;

11 is a sectional view taken along the line cc 'in FIG.

FIG. 12 is a plan view of a semiconductor manufacturing substrate according to a seventh embodiment;

FIG. 13 is a plan view of a semiconductor manufacturing substrate according to an eighth embodiment;

FIG. 14 is a plan view of a semiconductor manufacturing substrate according to a ninth embodiment;

FIG. 15 is a sectional view taken along the line dd ′ in FIG. 14;

FIG. 16 is a plan view of a semiconductor manufacturing substrate according to a tenth embodiment;

FIG. 17 is a plan view of a semiconductor manufacturing substrate according to an eleventh embodiment.

FIG. 18 is a sectional view taken along the line ee ′ in FIG. 17;

FIG. 19 is a plan view showing another method of fixing the semiconductor manufacturing substrate of FIG. 17;

FIG. 20 is a sectional view taken along the line ee ′ in FIG. 17;

FIG. 21 is a sectional view taken along the line ee ′ in FIG. 17;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate thin part 2 ... Semiconductor substrate thick type part 3 ... Oxide film 4 ... Semiconductor element formation part 5 ... Thin semiconductor substrate 6 ... Table semiconductor substrate 7 ... Table semiconductor substrate groove 8 ... Semiconductor substrate table thin part 9 ... Semiconductor substrate stand 10 ... Thin semiconductor substrate holder 11 ... Vacuum groove 12 ... Vacuum hole

Claims (10)

[Claims] 1. A semiconductor manufacturing substrate characterized in that one surface is flat and the other surface has a thick part and a thin part. 2. The semiconductor manufacturing substrate according to claim 1, wherein said thick portion is provided on an outer peripheral portion. 3. The semiconductor manufacturing substrate according to claim 1, wherein said thick portion is formed by attaching another semiconductor substrate via an oxide film. 4. A semiconductor manufacturing substrate, wherein two semiconductor substrates are partially bonded via an oxide film. 5. The semiconductor manufacturing substrate according to claim 4, wherein one of the semiconductor substrates has a groove formed in a part or all of the unbonded portion. 6. The semiconductor manufacturing substrate according to claim 4, wherein a plurality of semiconductor substrates are bonded on said one semiconductor substrate. 7. A semiconductor manufacturing substrate, wherein a semiconductor substrate-shaped mold is formed. 8. A substrate for manufacturing a semiconductor, comprising a mechanism for fixing a semiconductor. 9. A semiconductor manufacturing substrate having a hole for passing a vacuum from the lower part of the apparatus for fixing the semiconductor substrate. 10. The semiconductor manufacturing substrate according to claim 7, wherein the substrate is manufactured using ceramic, quartz or a semiconductor substrate as a material.