JP2002287121A - Substrate for reflective liquid crystal display - Google Patents
Substrate for reflective liquid crystal displayInfo
- Publication number
- JP2002287121A JP2002287121A JP2001088540A JP2001088540A JP2002287121A JP 2002287121 A JP2002287121 A JP 2002287121A JP 2001088540 A JP2001088540 A JP 2001088540A JP 2001088540 A JP2001088540 A JP 2001088540A JP 2002287121 A JP2002287121 A JP 2002287121A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- reflective liquid
- display substrate
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 35
- 229920001721 polyimide Polymers 0.000 claims description 23
- 239000004642 Polyimide Substances 0.000 claims description 16
- 125000001424 substituent group Chemical group 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 125000002252 acyl group Chemical group 0.000 claims description 7
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 150000004984 aromatic diamines Chemical class 0.000 claims description 5
- 238000009833 condensation Methods 0.000 claims description 4
- 230000005494 condensation Effects 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 4
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 4
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- 238000011156 evaluation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
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- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
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- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- QBSMHWVGUPQNJJ-UHFFFAOYSA-N 4-[4-(4-aminophenyl)phenyl]aniline Chemical group C1=CC(N)=CC=C1C1=CC=C(C=2C=CC(N)=CC=2)C=C1 QBSMHWVGUPQNJJ-UHFFFAOYSA-N 0.000 description 2
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- 150000008065 acid anhydrides Chemical class 0.000 description 2
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- 238000005266 casting Methods 0.000 description 2
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- CBLAIDIBZHTGLV-UHFFFAOYSA-N dodecane-2,11-diamine Chemical compound CC(N)CCCCCCCCC(C)N CBLAIDIBZHTGLV-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- VQXBKCWOCJSIRT-UHFFFAOYSA-N octadecane-1,12-diamine Chemical compound CCCCCCC(N)CCCCCCCCCCCN VQXBKCWOCJSIRT-UHFFFAOYSA-N 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
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- XGKKWUNSNDTGDS-UHFFFAOYSA-N 2,5-dimethylheptane-1,7-diamine Chemical compound NCC(C)CCC(C)CCN XGKKWUNSNDTGDS-UHFFFAOYSA-N 0.000 description 1
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- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- KADGVXXDDWDKBX-UHFFFAOYSA-N naphthalene-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C21 KADGVXXDDWDKBX-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- BBYQSYQIKWRMOE-UHFFFAOYSA-N naphthalene-1,2,6,7-tetracarboxylic acid Chemical compound C1=C(C(O)=O)C(C(O)=O)=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 BBYQSYQIKWRMOE-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- AVRVTTKGSFYCDX-UHFFFAOYSA-N perylene-1,2,7,8-tetracarboxylic acid Chemical compound C1=CC(C2=C(C(C(=O)O)=CC=3C2=C2C=CC=3)C(O)=O)=C3C2=C(C(O)=O)C(C(O)=O)=CC3=C1 AVRVTTKGSFYCDX-UHFFFAOYSA-N 0.000 description 1
- UBGIFSWRDUBQIC-UHFFFAOYSA-N perylene-2,3,8,9-tetracarboxylic acid Chemical compound C1=CC2=C(C(O)=O)C(C(=O)O)=CC(C=3C4=C5C=C(C(C(O)=O)=C4C=CC=3)C(O)=O)=C2C5=C1 UBGIFSWRDUBQIC-UHFFFAOYSA-N 0.000 description 1
- CYPCCLLEICQOCV-UHFFFAOYSA-N phenanthrene-1,2,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1 CYPCCLLEICQOCV-UHFFFAOYSA-N 0.000 description 1
- UMSVUULWTOXCQY-UHFFFAOYSA-N phenanthrene-1,2,7,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C2C3=CC=C(C(=O)O)C(C(O)=O)=C3C=CC2=C1C(O)=O UMSVUULWTOXCQY-UHFFFAOYSA-N 0.000 description 1
- RVRYJZTZEUPARA-UHFFFAOYSA-N phenanthrene-1,2,9,10-tetracarboxylic acid Chemical compound C1=CC=C2C(C(O)=O)=C(C(O)=O)C3=C(C(O)=O)C(C(=O)O)=CC=C3C2=C1 RVRYJZTZEUPARA-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- MIROPXUFDXCYLG-UHFFFAOYSA-N pyridine-2,5-diamine Chemical compound NC1=CC=C(N)N=C1 MIROPXUFDXCYLG-UHFFFAOYSA-N 0.000 description 1
- VHNQIURBCCNWDN-UHFFFAOYSA-N pyridine-2,6-diamine Chemical compound NC1=CC=CC(N)=N1 VHNQIURBCCNWDN-UHFFFAOYSA-N 0.000 description 1
- YKWDNEXDHDSTCU-UHFFFAOYSA-N pyrrolidine-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C1NC(C(O)=O)C(C(O)=O)C1C(O)=O YKWDNEXDHDSTCU-UHFFFAOYSA-N 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、主として反射型液
晶表示装置に用いられる表示素子用プラスチック基板に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plastic substrate for a display element mainly used for a reflection type liquid crystal display device.
【0002】[0002]
【従来の技術】液晶,プラズマディスプレイ,エレクト
ロルミネッセンス(EL),蛍光表示管,発光ダイオ−
ド等のディスプレイ基材としてはガラス板が多く用いら
れている。しかし、大面積化を考えた場合、割れ易い、
曲げられない、比重が大きく軽量化に不向き等の問題か
ら、近年、ガラス板の代わりにプラスチック素材を用い
る試みが数多く行われるようになってきた。しかし、従
来のプラスチック表示素子用基板では、基板をなす樹脂
層と電極との熱膨張率の差が大きいため、特に加工時高
い温度変化にさらされるTFT液晶基板用途に於いて
は、透明電極に亀裂が生じ易く抵抗値の増大が生じた
り、時には断線といった事態に陥ることもあった。IT
O等の電極と熱線膨張率の値が近い材料としては、ガラ
ス等のセラミック、金属、ポリイミド等があるが、ガラ
スは前述のように割れやすく、金属は基板としての絶縁
性に問題があった。また、ポリイミドは基板の材質とし
ては高価であった。2. Description of the Related Art Liquid crystals, plasma displays, electroluminescence (EL), fluorescent display tubes, light emitting diodes
A glass plate is often used as a display substrate such as a glass substrate. However, considering a large area, it is easy to crack,
In recent years, many attempts have been made to use a plastic material instead of a glass plate due to problems such as being unbendable, having a large specific gravity, and being unsuitable for weight reduction. However, in a conventional plastic display element substrate, since the difference in thermal expansion coefficient between the resin layer and the electrode forming the substrate is large, especially in the case of a TFT liquid crystal substrate which is exposed to a high temperature change during processing, a transparent electrode is used. Cracks were likely to occur, causing an increase in the resistance value, and sometimes a disconnection. IT
Materials having a thermal expansion coefficient close to that of an electrode such as O include ceramics such as glass, metal, and polyimide. However, glass is easily broken as described above, and metal has a problem in insulating properties as a substrate. . Further, polyimide is expensive as a material of the substrate.
【0003】一方、反射型の液晶表示装置は、外部光の
有る環境においては消費電力の多くの部分を占めるバッ
クライトを必要としないため、特に携帯機器の表示分野
でその高品位化が望まれている。この反射型液晶表示装
置は、太陽光等の外部光が有る環境では表示セルの裏面
側基板の上に設けられた反射板により反射・散乱させて
バックライトの代わりとし、暗い環境においてはLED
等から供給される光を反射させて表示することもでき
る。On the other hand, a reflection type liquid crystal display device does not require a backlight which occupies a large part of power consumption in an environment where external light is present. ing. In an environment where there is external light such as sunlight, the reflection type liquid crystal display device is used as a substitute for a backlight by reflecting and scattering by a reflection plate provided on a backside substrate of a display cell.
The display can also be performed by reflecting light supplied from the light source.
【0004】[0004]
【発明が解決しようとする課題】本発明は、従来前述の
ような問題があった反射型液晶表示基板において、安価
で、割れにくく、絶縁性に優れると共に、配線の亀裂を
生じさせない特徴を持つ反射型液晶表示基板を供給する
ものである。SUMMARY OF THE INVENTION The present invention relates to a reflection type liquid crystal display substrate having the above-mentioned problems, and is characterized by being inexpensive, resistant to cracking, excellent in insulating properties and not causing wiring cracks. It supplies a reflective liquid crystal display substrate.
【0005】[0005]
【課題を解決するための手段】プラスチックは、軽い、
割れにくい、曲げやすいといった利点を持ち、次世代の
表示素子用基板としてはガラスにない特徴を有してはい
るものの、吸水や温度変化に対する伸び縮み、すなわち
寸法安定性に問題がある。一方、金属は耐衝撃性、ガス
バリア性等に優れるが、耐酸性および基板としての絶縁
性等に問題がある。プラスチックの一種であるポリイミ
ドは、吸水性は高いが、熱線膨張係数が低く、配線に亀
裂を生じさせないという点では優れた材料であるが、ガ
ラスや他のプラスチック材料と比較して、材料単価が高
く、コスト面で利用することが困難であった。本発明者
らは、一種類の材料を用いることでは、前記課題を解決
することが困難であると考え、鋭意検討を行った結果、
金属に直接コーティング等の方法により、イミド結合を
有する樹脂層を積層する事で、前記課題を解決できる事
を見いだし、以下の発明に至った。Means for Solving the Problems Plastic is light,
Although it has the advantage of being difficult to break and is easy to bend, and has characteristics that glass does not have as a next-generation display element substrate, it has problems in elongation and contraction due to water absorption and temperature change, that is, dimensional stability. On the other hand, metals are excellent in impact resistance, gas barrier properties, etc., but have problems in acid resistance, insulating properties as a substrate, and the like. Polyimide, a type of plastic, has high water absorption, but has a low coefficient of linear thermal expansion and is an excellent material in that it does not cause cracks in wiring.However, compared to glass and other plastic materials, the material unit price is higher. It was expensive and difficult to use in terms of cost. The present inventors consider that it is difficult to solve the above-described problems by using one type of material, and as a result of intensive studies,
The inventors have found that the above problem can be solved by laminating a resin layer having an imide bond by a method such as direct coating on a metal, and have reached the following invention.
【0006】すなわち本発明は、 (1)少なくとも、厚みが50〜700μmである金属
層と、30〜200℃での平均線膨張係数が−10〜5
0ppmである主鎖にイミド結合を有する樹脂層とから
なる積層シートを使用してなる反射型液晶表示基板。 (2)30〜200℃での金属層とポリイミドとの平均
線膨張係数の差が、0〜30ppmである請求項1記載
の反射型液晶表示基板。 (3)樹脂層の厚みが1〜700μmである(1)、
(2)の反射型液晶表示基板。 (4)金属層の両側に樹脂層が形成されてなる(1)〜
(3)の反射型液晶表示基板。 (5)基板の総厚みが51〜1100μmである(1)
〜(4)の反射型液晶表示基板。 (6)主鎖にイミド結合を有する樹脂層が熱硬化性ポリ
イミドを主成分とすることを特徴とする(1)〜(5)
の反射型液晶表示基板。 (7)主鎖にイミド結合を有する樹脂層が縮合型ポリイ
ミドを主成分とすることを特徴とする(1)〜(6)の
反射型液晶表示基板。 (8)縮合型ポリイミドが式1に示す芳香族酸二無水物
と、式2に示す芳香族ジアミンから合成される事を特徴
とする(7)の反射型液晶表示基板。That is, the present invention provides: (1) at least a metal layer having a thickness of 50 to 700 μm and an average linear expansion coefficient at 30 to 200 ° C. of -10 to 5;
A reflective liquid crystal display substrate using a laminated sheet comprising a resin layer having an imide bond in a main chain of 0 ppm. (2) The reflective liquid crystal display substrate according to claim 1, wherein a difference in average linear expansion coefficient between the metal layer and the polyimide at 30 to 200 ° C is 0 to 30 ppm. (3) The thickness of the resin layer is 1 to 700 μm (1),
(2) The reflective liquid crystal display substrate. (4) A resin layer is formed on both sides of a metal layer (1) to
(3) The reflection type liquid crystal display substrate. (5) The total thickness of the substrate is 51 to 1100 μm (1)
(4) The reflection type liquid crystal display substrate. (6) The resin layer having an imide bond in the main chain is mainly composed of a thermosetting polyimide (1) to (5).
Reflective liquid crystal display substrate. (7) The reflective liquid crystal display substrate according to any one of (1) to (6), wherein the resin layer having an imide bond in the main chain contains a condensation type polyimide as a main component. (8) The reflective liquid crystal display substrate of (7), wherein the condensed polyimide is synthesized from the aromatic dianhydride represented by Formula 1 and the aromatic diamine represented by Formula 2.
【0007】[0007]
【化3】 (R、R’はアルキル基、炭素数がC1 〜C3のアルコ
キシ基、アシル基、ハロゲンを示し、同じでも異なって
も良い。x、yは同一芳香環上の置換基数を示し、x=
0〜3、y=0〜3の整数で同じでも異なっても良い。
n=0〜5の整数)Embedded image (R and R 'each represent an alkyl group, an alkoxy group having 1 to 3 carbon atoms, an acyl group, or a halogen, and may be the same or different. X and y each represent the number of substituents on the same aromatic ring; =
The integers of 0 to 3 and y = 0 to 3 may be the same or different.
n = 0 to 5)
【0008】[0008]
【化4】 (R、R’はアルキル基、炭素数がC1 〜C3のアルコ
キシ基、アシル基、ハロゲンを示し、同じでも異なって
も良い。x、yは同一芳香環上の置換基数を示し、x=
0〜4、y=0〜4の整数で同じでも異なっても良い。
n=0〜5の整数)Embedded image (R and R 'each represent an alkyl group, an alkoxy group having 1 to 3 carbon atoms, an acyl group, or a halogen, and may be the same or different. X and y each represent the number of substituents on the same aromatic ring; =
0 to 4, y = 0 to 4 may be the same or different.
n = 0 to 5)
【0009】[0009]
【発明の実施の形態】本発明の金属層は、基板の剛性を
維持し、熱膨張を押さえるためのものであり、その厚み
は、50〜700μm、好ましくは70〜500μm、
より好ましくは80〜400μm、さらに好ましくは1
00〜300μmである。この厚みが薄すぎると、剛性
を維持できなくなり、また厚すぎると、重くなる。好ま
しい金属の例としては、ステンレス、銅、アルミニウ
ム、鉄、ニッケル、クロム、亜鉛、錫、マグネシウム等
を代表的に含むの金属・合金を挙げることができる。BEST MODE FOR CARRYING OUT THE INVENTION The metal layer of the present invention is for maintaining rigidity of a substrate and suppressing thermal expansion, and has a thickness of 50 to 700 μm, preferably 70 to 500 μm.
More preferably 80 to 400 μm, even more preferably 1 to 400 μm.
It is 00 to 300 μm. If this thickness is too thin, rigidity cannot be maintained, and if it is too thick, it becomes heavy. Examples of preferred metals include metals and alloys typically including stainless steel, copper, aluminum, iron, nickel, chromium, zinc, tin, magnesium and the like.
【0010】本発明の主鎖にイミド結合を有する樹脂層
は、電気絶縁性を高め、酸性物質に直接触れることを防
ぐと共に軽くするためのものであり、さらに熱膨張を押
さえるためのものでもある。したがって、30〜200
℃での平均線膨張係数は−10〜50ppmの範囲であ
り、、好ましくは、−5〜30ppm、より好ましくは
0〜20ppmの範囲である。平均線膨張係数が−10
ppm未満または50ppmを超える場合には配線に用
いられる金属の平均線膨張係数との差が大きくなるた
め、高温にさらされたとき断線を生じるおそれがある。
このことから、金属層と樹脂層との30〜200℃での
平均線膨張係数の差が0〜30ppmであることが望ま
しい。好ましい樹脂層の例としては、熱硬化性ポリイミ
ド樹脂を主成分とするのが良く、熱硬化性ポリイミドの
中でも縮合型ポリイミドが良い。縮合型ポリイミドの例
としては、式1に示す芳香族酸二無水物と、式2に示す
芳香族ジアミンから合成されるポリイミドを挙げること
ができる。The resin layer having an imide bond in the main chain of the present invention is for improving electrical insulation, preventing direct contact with an acidic substance and reducing its weight, and also for suppressing thermal expansion. . Therefore, 30 to 200
The average coefficient of linear expansion at ℃ is in the range of -10 to 50 ppm, preferably in the range of -5 to 30 ppm, more preferably in the range of 0 to 20 ppm. Average linear expansion coefficient is -10
If the content is less than 50 ppm or more than 50 ppm, the difference from the average linear expansion coefficient of the metal used for the wiring becomes large, and there is a possibility that disconnection may occur when exposed to high temperatures.
For this reason, it is desirable that the difference in the average linear expansion coefficient between 30 and 200 ° C. between the metal layer and the resin layer be 0 to 30 ppm. As a preferred example of the resin layer, a thermosetting polyimide resin is preferably used as a main component, and among the thermosetting polyimides, a condensation type polyimide is preferable. As an example of the condensation type polyimide, a polyimide synthesized from an aromatic dianhydride represented by Formula 1 and an aromatic diamine represented by Formula 2 can be given.
【0011】式1の置換基R、R’はアルキル基、炭素
数がC1 〜C3のアルコキシ基、アシル基、ハロゲンを
示し、同じでも異なっても良い。置換基数は特に限定さ
れるものではなく、置換基が無くても良い。また、結合
位置についても特に限定されるものではない。芳香環数
は1〜6個でパラ結合していれば良く(n=0〜5の整
数)、好ましくは1〜3個であり(n=0〜2の整
数)、最も好ましくは1個である(n=0)。例えば、
ピロメリット酸二無水物、ビフタル酸無水物、p−ター
フェニルテトラカルボン酸二無水物などが挙げられる。
特に好ましくはピロメリット酸二無水物である。これら
の芳香族酸二無水物は1種類でも数種類を混合して用い
てもかまわない。また、他の特性とのバランスをとるた
めに、若干量の他の酸無水物を併用してもかまわない。The substituents R and R 'in the formula 1 represent an alkyl group, an alkoxy group having 1 to 3 carbon atoms, an acyl group, and a halogen, and may be the same or different. The number of substituents is not particularly limited, and may not have a substituent. Also, the bonding position is not particularly limited. The number of aromatic rings may be 1 to 6 and para-bonded (n = 0 to 5), preferably 1 to 3 (n = 0 to 2), and most preferably 1 (N = 0). For example,
Examples include pyromellitic dianhydride, biphthalic anhydride, p-terphenyltetracarboxylic dianhydride, and the like.
Particularly preferred is pyromellitic dianhydride. These aromatic acid dianhydrides may be used alone or in combination of several kinds. In order to balance with other characteristics, a small amount of another acid anhydride may be used in combination.
【0012】併用する他の酸無水物としては、例えばベ
ンゼン−1、2、3、4−テトラカルボン酸二無水物、
3、3’、4、4’−ベンゾフェノンテトラカルボン酸
二無水物、2、2’、3、3’−ベンゾフェノンテトラ
カルボン酸二無水物、2、3、3’、4’−ベンゾフェ
ノンテトラカルボン酸二無水物、ナフタレン−2、3、
6、7−テトラカルボン酸二無水物、ナフタレン−1、
2、5、6−テトラカルボン酸二無水物、ナフタレン−
1、2、4、5−テトラカルボン酸二無水物、ナフタレ
ン−1、4、5、8−テトラカルボン酸二無水物、ナフ
タレン−1、2、6、7−テトラカルボン酸二無水物、
4、8−ジメチル−1、2、3、5、6、7−ヘキサヒ
ドロナフタレン−1、2、5、6−テトラカルボン酸二
無水物、4、8−ジメチル−1、2、3、5、6、7−
ヘキサヒドロナフタレン−2、3、6、7−テトラカル
ボン酸二無水物、2、6−ジクロロナフタレン−1、
4、5、8−テトラカルボン酸二無水物、2、7−ジク
ロロナフタレン−1、4、5、8−テトラカルボン酸二
無水物、2、3、6、7−テトラクロロナフタレン−
1、4、5、8−テトラカルボン酸二無水物、1、4、
5、8−テトラクロロナフタレン−2、3、6、7−テ
トラカルボン酸二無水物、2、2−ビス(2、3−ジカ
ルボキシフェニル)−プロパン二無水物、2、2−ビス
(3、4−ジカルボキシフェニル)−プロパン二無水
物、ビス(2、3−ジカルボキシフェニル)エーテル二
無水物、ビス(3、4−ジカルボキシフェニル)エーテ
ル二無水物、ビス(2、3−ジカルボキシフェニル)メ
タン二無水物、ビス(3、4−ジカルボキシフェニル)
メタン二無水物、ビス(2、3−ジカルボキシフェニ
ル)スルホン二無水物、ビス(3、4−ジカルボキシフ
ェニル)スルホン二無水物、1、1−ビス(2、3−ジ
カルボキシフェニル)エタン二無水物、1、1−ビス
(3、4−ジカルボキシフェニル)エタン二無水物、ベ
リレン−2、3、8、9−テトラカルボン酸二無水物、
ペリレン−3、4、9、10−テトラカルボン酸二無水
物、ペリレン−4、5、10、11−テトラカルボン酸
二無水物、ペリレン−5、6、11、12−テトラカル
ボン酸二無水物、フェナンスレン−1、2、7、8−テ
トラカルボン酸二無水物、フェナンスレン−1、2、
6、7−テトラカルボン酸二無水物、フェナンスレン−
1、2、9、10−テトラカルボン酸二無水物、シクロ
ペンタン−1、2、3、4−テトラカルボン酸二無水
物、ピラジン−2、3、5、6−テトラカルボン酸二無
水物、ピロリジン−2、3、4、5−テトラカルボン酸
二無水物、チオフェン−2、3、4、5−テトラカルボ
ン酸二無水物などがあげられるが、これらに限定される
ものではない。また、使用にあたっては、1種類でも2
種類以上の混合物でもかまわない。Other acid anhydrides to be used in combination include, for example, benzene-1,2,3,4-tetracarboxylic dianhydride,
3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenonetetracarboxylic dianhydride, 2,3,3 ′, 4′-benzophenonetetracarboxylic acid Dianhydride, naphthalene-2,3,
6,7-tetracarboxylic dianhydride, naphthalene-1,
2,5,6-tetracarboxylic dianhydride, naphthalene-
1,2,4,5-tetracarboxylic dianhydride, naphthalene-1,4,5,8-tetracarboxylic dianhydride, naphthalene-1,2,6,7-tetracarboxylic dianhydride,
4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5 , 6, 7-
Hexahydronaphthalene-2,3,6,7-tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,
4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-
1,4,5,8-tetracarboxylic dianhydride, 1,4,
5,8-tetrachloronaphthalene-2,3,6,7-tetracarboxylic dianhydride, 2,2-bis (2,3-dicarboxyphenyl) -propane dianhydride, 2,2-bis (3 , 4-dicarboxyphenyl) -propane dianhydride, bis (2,3-dicarboxyphenyl) ether dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, bis (2,3-di Carboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl)
Methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane Dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, berylen-2,3,8,9-tetracarboxylic dianhydride,
Perylene-3,4,9,10-tetracarboxylic dianhydride, perylene-4,5,10,11-tetracarboxylic dianhydride, perylene-5,6,11,12-tetracarboxylic dianhydride Phenanthrene-1,2,7,8-tetracarboxylic dianhydride, phenanthrene-1,2,
6,7-tetracarboxylic dianhydride, phenanthrene-
1,2,9,10-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride, Examples include, but are not limited to, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride and thiophene-2,3,4,5-tetracarboxylic dianhydride. In addition, in use, even one kind is 2
Mixtures of more than one type may be used.
【0013】本発明で用いられる芳香族ジアミンは、式
2のような骨格を有していれば良く、芳香環に置換基が
結合していてもかまわない。The aromatic diamine used in the present invention may have a skeleton as shown in Formula 2, and a substituent may be bonded to the aromatic ring.
【0014】[0014]
【化5】 (R、R’はアルキル基、炭素数がC1 〜C3のアルコ
キシ基、アシル基、ハロゲンを示し、同じでも異なって
も良い。x、yは同一芳香環上の置換基数を示し、 x
=0〜4、y=0〜4の整数で同じでも異なっても良
い。n=0〜5の整数)Embedded image (R and R 'each represent an alkyl group, an alkoxy group having 1 to 3 carbon atoms, an acyl group, or a halogen, and may be the same or different. X and y represent the number of substituents on the same aromatic ring;
= 0 to 4, y = 0 to 4 may be the same or different. n = 0 to 5)
【0015】置換基R、R’はアルキル基、炭素数がC
1 〜C3のアルコキシ基、アシル基、ハロゲンを示し、
同じでも異なっても良い。好ましくはアルキル基であ
り、特に好ましくはメチル基である。置換基数は特に限
定されるものではなく、置換基が無くても良い。また、
結合位置についても特に限定されるものではない。芳香
環数は1〜6個でパラ結合していれば良く(n=0〜5
の整数)、好ましくは2〜3個である(n=1〜2の整
数)。例えば、p−フェニレンジアミン、ベンジジン、
o−トリジン、m−トリジン、ビス(トリフルオロメチ
ル)ベンジジン、4,4”−ジアミノ−p−ターフェニ
ルなどが挙げられる。好ましくはo−トリジン、m−ト
リジン、4,4”−ジアミノ−p−ターフェニルであ
る。これらの芳香族ジアミンは1種類でも数種類を混合
して用いてもかまわない。また、他の特性とのバランス
をとるために、若干量の他のジアミン類を併用してもか
まわない。The substituents R and R 'are an alkyl group and the carbon number is C.
Represents an alkoxy group, an acyl group, or a halogen atom of 1 to 3 ;
It may be the same or different. It is preferably an alkyl group, and particularly preferably a methyl group. The number of substituents is not particularly limited, and may not have a substituent. Also,
The bonding position is not particularly limited. The number of aromatic rings may be 1 to 6 and para-bonded (n = 0 to 5).
), And preferably 2 to 3 (n = an integer of 1 to 2). For example, p-phenylenediamine, benzidine,
o-Tolidine, m-tolidine, bis (trifluoromethyl) benzidine, 4,4 "-diamino-p-terphenyl and the like. Preferably, o-tolidine, m-tolidine, 4,4" -diamino-p -Terphenyl. These aromatic diamines may be used alone or in combination of several kinds. In order to balance with other characteristics, a small amount of other diamines may be used in combination.
【0016】併用する他のジアミン類としては、1、4
−ビス(3−アミノプロピル)テトラメチルジシロキサ
ン、m−フェニレン−ジアミン、1−イソプロピル−
2、4−フェニレン−ジアミン、4、4’−ジアミノ−
ジフェニルプロパン、3、3’−ジアミノ−ジフェニル
プロパン、4、4’−ジアミノ−ジフェニルエタン、
3、3’−ジアミノ−ジフェニルエタン、4、4’−ジ
アミノ−ジフェニルメタン、3、3’−ジアミノ−ジフ
ェニルメタン、4、4’−ジアミノ−ジフェニルスルフ
ィド、3、3’−ジアミノ−ジフェニルスルフィド、
4、4’−ジアミノ−ジフェニルスルホン、3、3’−
ジアミノ−ジフェニルスルホン、4、4’−ジアミノ−
ジフェニルエーテル、3、3’−ジアミノ−ジフェニル
エーテル、ベンジジン、3、3’−ジアミノ−ビフェニ
ル、3、3’−ジメチル−4、4’−ジアミノ−ビフェ
ニル、3、3’−ジメトキシ−ベンジジン、4、4’−
ジアミノ−p−テルフェニル、3、3’−ジアミノ−p
−テルフェニル、ビス(p−アミノ−シクロヘキシル)
メタン、ビス(p−β−アミノ−t−ブチルフェニル)
エーテル、ビス(p−β−メチル−δ−アミノペンチ
ル)ベンゼン、p−ビス(2−メチル−4−アミノ−ペ
ンチル)ベンゼン、p−ビス(1、1−ジメチル−5−
アミノ−ペンチル)ベンゼン、1、5−ジアミノ−ナフ
タレン、2、6−ジアミノ−ナフタレン、2、4−ビス
(β−アミノ−t−ブチル)トルエン、2、4−ジアミ
ノ−トルエン、2、6−ジアミノ−ピリジン、2、5−
ジアミノ−ピリジン、2、5−ジアミノ−1、3、4−
オキサジアゾール、1、4−ジアミノ−シクロヘキサ
ン、ピペラジン、メチレン−ジアミン、エチレン−ジア
ミン、プロピレン−ジアミン、2、2−ジメチル−プロ
ピレン−ジアミン、テトラメチレン−ジアミン、ペンタ
メチレン−ジアミン、ヘキサメチレン−ジアミン、2、
5−ジメチル−ヘキサメチレン−ジアミン、3−メトキ
シ−ヘキサメチレン−ジアミン、ヘプタメチレン−ジア
ミン、2、5−ジメチル−ヘプタメチレン−ジアミン、
3−メチル−ヘプタメチレン−ジアミン、4、4−ジメ
チル−ヘプタメチレン−ジアミン、オクタメチレン−ジ
アミン、ノナメチレン−ジアミン、5−メチル−ノナメ
チレン−ジアミン、2、5−ジメチル−ノナメチレン−
ジアミン、デカメチレン−ジアミン、1、10−ジアミ
ノ−1、10−ジメチル−デカン、2、11−ジアミノ
−ドデカン、1、12−ジアミノ−オクタデカン、1、
12−ジアミノ−オクタデカン、2、17−ジアミノ−
アイコサン、ジアミノシロキサン、2、6−ジアミノ−
4−カルボキシリックベンゼン、3、3’−ジアミノ−
4、4’−ジカルボキシリックベンジジン等が挙げられ
るが、これらに限定されるものではない。また使用にあ
たっては、1種類でも2種類以上の混合物でもかまわな
い。Other diamines used in combination include 1,4
-Bis (3-aminopropyl) tetramethyldisiloxane, m-phenylene-diamine, 1-isopropyl-
2,4-phenylene-diamine, 4,4′-diamino-
Diphenylpropane, 3,3′-diamino-diphenylpropane, 4,4′-diamino-diphenylethane,
3,3′-diamino-diphenylethane, 4,4′-diamino-diphenylmethane, 3,3′-diamino-diphenylmethane, 4,4′-diamino-diphenyl sulfide, 3,3′-diamino-diphenyl sulfide,
4,4'-diamino-diphenylsulfone, 3,3'-
Diamino-diphenylsulfone, 4,4'-diamino-
Diphenyl ether, 3,3′-diamino-diphenyl ether, benzidine, 3,3′-diamino-biphenyl, 3,3′-dimethyl-4,4′-diamino-biphenyl, 3,3′-dimethoxy-benzidine, 4,4 '-
Diamino-p-terphenyl, 3,3′-diamino-p
-Terphenyl, bis (p-amino-cyclohexyl)
Methane, bis (p-β-amino-t-butylphenyl)
Ether, bis (p-β-methyl-δ-aminopentyl) benzene, p-bis (2-methyl-4-amino-pentyl) benzene, p-bis (1,1-dimethyl-5-
(Amino-pentyl) benzene, 1,5-diamino-naphthalene, 2,6-diamino-naphthalene, 2,4-bis (β-amino-t-butyl) toluene, 2,4-diamino-toluene, 2,6- Diamino-pyridine, 2,5-
Diamino-pyridine, 2,5-diamino-1,3,4-
Oxadiazole, 1,4-diamino-cyclohexane, piperazine, methylene-diamine, ethylene-diamine, propylene-diamine, 2,2-dimethyl-propylene-diamine, tetramethylene-diamine, pentamethylene-diamine, hexamethylene-diamine 2,
5-dimethyl-hexamethylene-diamine, 3-methoxy-hexamethylene-diamine, heptamethylene-diamine, 2,5-dimethyl-heptamethylene-diamine,
3-methyl-heptamethylene-diamine, 4,4-dimethyl-heptamethylene-diamine, octamethylene-diamine, nonamethylene-diamine, 5-methyl-nonamethylene-diamine, 2,5-dimethyl-nonamethylene-
Diamine, decamethylene-diamine, 1,10-diamino-1,10-dimethyl-decane, 2,11-diamino-dodecane, 1,12-diamino-octadecane, 1,
12-diamino-octadecane, 2,17-diamino-
Aicosan, diaminosiloxane, 2,6-diamino-
4-carboxylic benzene, 3,3'-diamino-
4,4′-dicarboxylic benzidine and the like, but are not limited thereto. In use, one kind or a mixture of two or more kinds may be used.
【0017】本発明の樹脂層には、必要に応じて、本発
明の効果を阻害しない範囲で、滑剤、耐熱剤、帯電防止
剤、紫外線吸収剤、顔料等、通常光学材料に配合される
各種の成分を配合することができる。また、樹脂層の上
に、吸水による寸法変化を押さえるための無機膜を積層
する事も可能であり、無機膜と樹脂層との密着性を高め
るためのアンダーコート層及び無機膜を保護するための
保護層を積層する事も可能である。本発明の樹脂層は、
金属層と直接密着している必要があり、好ましくはスプ
レー、ロールコーター、グラビアコーター、ディップコ
ーター、または流延法(溶剤キャスト)等により、形成
されるのがよいが、特に限定はしない。また、樹脂層の
厚みは1〜700μmに形成されるのが好ましい。In the resin layer of the present invention, if necessary, various kinds of additives such as a lubricant, a heat-resistant agent, an antistatic agent, an ultraviolet absorber, a pigment, etc., which are usually blended in optical materials, as long as the effects of the present invention are not impaired. Can be blended. Further, on the resin layer, it is also possible to laminate an inorganic film for suppressing a dimensional change due to water absorption, and to protect an undercoat layer and an inorganic film for improving the adhesion between the inorganic film and the resin layer. Can be laminated. The resin layer of the present invention,
It must be in direct contact with the metal layer, and is preferably formed by spraying, a roll coater, a gravure coater, a dip coater, or a casting method (solvent casting), but is not particularly limited. Further, the thickness of the resin layer is preferably formed to be 1 to 700 μm.
【0018】本発明の金属層および樹脂層は、共に一層
以上あればよいが、例えば、金属層の両側に樹脂層を積
層する事で、また、両側の樹脂層の厚みと種類を変える
ことによって、基板の反りを防止する事も可能である。
もちろん各種の金属層および樹脂層を何層積層しても良
い。そして、これらの総厚みは、51〜1100μmが
好ましい。あまり薄すぎると、剛性に欠け、厚すぎる
と、薄型表示素子としてのメリットがなくなる。The metal layer and the resin layer of the present invention may be at least one layer. For example, by laminating resin layers on both sides of the metal layer, or by changing the thickness and type of the resin layers on both sides. It is also possible to prevent the substrate from warping.
Of course, any number of various metal layers and resin layers may be laminated. And the total thickness is preferably 51 to 1100 μm. If it is too thin, it lacks rigidity, and if it is too thick, there is no merit as a thin display element.
【0019】[0019]
【実施例】次に本発明について、実施例及び比較例を挙
げて詳細に説明するが、本発明はその要旨を越えない限
り、以下の実施例に制限されるものではない。 (実施例1):o−トリジン6.37gをN,N−ジメ
チルアセトアミド130mLに完全に溶解させた後、ピ
ロメリット酸二無水物6.54gを加え、15℃で1時
間、室温で3時間攪拌した。得られたワニスを厚み10
0μmのステンレス箔(SUS403)上にキャストし、乾燥さ
せた後、更に裏面も同様にキャストを行い、減圧下のオ
ーブン中で150℃*30分+200℃*30分+25
0℃*30分+300℃*3時間減圧加熱してイミド化
させ、厚さ200μmの基板を得た。(ホ゜リイミト゛/SUS403/ホ
゜リイミト゛=50/100/50μm) (実施例2): p−フェニレンジアミン3.24gを
N,N−ジメチルアセトアミド130mLに完全に溶解
させた後、ビフタル酸無水物8.83gを加え、15℃
で1時間、室温で20時間攪拌した。得られたワニスを
厚み300μmの亜鉛板にディップコートし、乾燥させ
た後、さらに減圧下のオーブン中で150℃*30分+
200℃*30分+250℃*30分+300℃*3時
間減圧加熱してイミド化させ、厚さ320μmの基板を
得た。(ホ゜リイミト゛/亜鉛/ホ゜リイミト゛=10/300/10μm)Next, the present invention will be described in detail with reference to examples and comparative examples, but the present invention is not limited to the following examples unless it exceeds the gist. (Example 1): After completely dissolving 6.37 g of o-tolidine in 130 mL of N, N-dimethylacetamide, 6.54 g of pyromellitic dianhydride was added, and the mixture was added at 15 ° C. for 1 hour and at room temperature for 3 hours. Stirred. The obtained varnish is applied to a thickness of 10
After casting on a 0 μm stainless steel foil (SUS403) and drying, the back surface is also cast in the same manner, and 150 ° C. * 30 minutes + 200 ° C. * 30 minutes + 25 in an oven under reduced pressure.
Heating was carried out under reduced pressure at 0 ° C. * 30 minutes + 300 ° C. * 3 hours for imidization to obtain a 200 μm thick substrate. (Polyimid / SUS403 / Polyimid = 50/100/50 μm) (Example 2): After completely dissolving 3.24 g of p-phenylenediamine in 130 mL of N, N-dimethylacetamide, 8.83 g of biphthalic anhydride was added. In addition, 15 ℃
For 1 hour and at room temperature for 20 hours. The obtained varnish was dip-coated on a zinc plate having a thickness of 300 μm, dried, and further heated in an oven under reduced pressure at 150 ° C. for 30 minutes.
Heating was performed under reduced pressure at 200 ° C. * 30 minutes + 250 ° C. * 30 minutes + 300 ° C. * 3 hours for imidization to obtain a substrate having a thickness of 320 μm. (Polyimid / zinc / polyimid = 10/300 / 10μm)
【0020】(比較例1):4,4’−ジアミノジフェ
ニルエーテル6.01gをN,N−ジメチルアセトアミ
ド130mLに完全に溶解させた後、ピロメリット酸二
無水物6.54gを加え、15℃で1時間、室温で3時
間攪拌した。得られたワニスを厚み100μmのステン
レス箔(SUS304)上にキャストし、乾燥させた後、更に裏
面も同様にキャストを行い、減圧下のオーブン中で15
0℃*30分+200℃*30分+250℃*30分+
300℃*3時間減圧加熱してイミド化させ、厚さ20
0μmの基板を得た。(ホ゜リイミト゛/SUS304/ホ゜リイミト゛=50/100/
50μm)これらのシートを以下の評価方法で評価した。結
果を表−1に示す。(Comparative Example 1): After completely dissolving 6.01 g of 4,4′-diaminodiphenyl ether in 130 mL of N, N-dimethylacetamide, 6.54 g of pyromellitic dianhydride was added, and the mixture was heated at 15 ° C. Stir for 1 hour and 3 hours at room temperature. The resulting varnish was cast on a stainless steel foil (SUS304) having a thickness of 100 μm, dried, and then cast on the back surface in the same manner.
0 ° C * 30 minutes + 200 ° C * 30 minutes + 250 ° C * 30 minutes +
Heat at 300 ° C * 3 hours under reduced pressure for imidization, thickness 20
A 0 μm substrate was obtained. (Polyimide / SUS304 / Polyimid = 50/100 /
(50 μm) These sheets were evaluated by the following evaluation methods. The results are shown in Table 1.
【0021】<評価方法> 平均線膨張係数: セイコー電子製TMA/SS12
0C型熱応力歪測定装置を用いて、窒素の存在下、1分
間に5℃の割合で温度を室温から(熱変形温度−20
℃)まで上昇させて20分間保持した後、1分間に5℃
の割合で温度を室温まで冷却し5分間室温で保持させ
た。その後、再度、1分間に5℃の割合で温度を上昇さ
せて、30℃〜200℃の時の値を測定して求めた。
(熱変形温度から20℃を引いた温度が350℃以上の
ときは350℃とした。) 耐溶剤性: 40℃のジメチルスルホキシド(DMS
O)溶液に試料を浸漬して60分放置。試料を取り出し
た後、目視にて外観を観察した。 耐配向剤性: スピンコーター上に試料を設置。その
表面にCRD−8201(住友ベークライト製)を滴下
した後 2500rpmでスピンコートを実施。180
℃60分乾燥処理後、目視にて外観を観察した。 耐液晶性: 基板の表面にメルク社製ZLI−479
2を1滴滴下する。120℃のオーブン内に投入して6
0分放置する。試料を取り出した後、目視にて外観を観
察する。 耐熱性: 基板を200℃×2時間、95℃温水×3
0分の処理を2回繰り返した後、目視にて樹脂層表面を
観察した。<Evaluation method> Average coefficient of linear expansion: TMA / SS12 manufactured by Seiko Denshi
Using a 0C-type thermal stress / strain measuring apparatus, the temperature was raised from room temperature at a rate of 5 ° C./min.
° C) and hold for 20 minutes, then 5 ° C per minute
The temperature was cooled to room temperature at a rate of and the temperature was kept at room temperature for 5 minutes. Thereafter, the temperature was again raised at a rate of 5 ° C. per minute, and the value at 30 ° C. to 200 ° C. was measured and found.
(When the temperature obtained by subtracting 20 ° C. from the heat deformation temperature is 350 ° C. or more, the temperature is 350 ° C.) Solvent resistance: 40 ° C. dimethyl sulfoxide (DMS)
O) The sample is immersed in the solution and left for 60 minutes. After taking out the sample, the external appearance was visually observed. Alignment agent resistance: A sample is placed on a spin coater. After dropping CRD-8201 (manufactured by Sumitomo Bakelite) on the surface, spin coating was performed at 2500 rpm. 180
After drying at 60 ° C. for 60 minutes, the appearance was visually observed. Liquid crystal resistance: ZLI-479 manufactured by Merck on the surface of the substrate
2 is added dropwise. Put in an oven at 120 ° C and put 6
Leave for 0 minutes. After removing the sample, the external appearance is visually observed. Heat resistance: 200 ° C x 2 hours, 95 ° C hot water x 3
After repeating the treatment for 0 minutes twice, the resin layer surface was visually observed.
【0022】[0022]
【表1】 [Table 1]
【0023】表1に示すように、実施例では樹脂層の平
均線膨張係数が30ppm以下という低い値であり、金
属層との平均線膨張係数の差も5ppmと低い値であっ
たために、耐熱性評価試験においても樹脂層にクラック
等の変化は全く観察されなかった。これに対して、比較
例では、樹脂層に同じポリイミド系樹脂を用いたにもか
かわらず、平均線膨張係数が59ppmと高く、金属層
との平均線膨張係数の差も50ppm程度の差があった
ために、耐熱性評価において、樹脂層に亀裂を生じたも
のと考えられる。本発明の基板は、耐溶剤性、耐配向剤
性、耐液晶性についても、いずれも問題なく、反射型液
晶表示基板としての用途に耐えうるものと考えられた。As shown in Table 1, in Examples, the average linear expansion coefficient of the resin layer was as low as 30 ppm or less, and the difference in average linear expansion coefficient with the metal layer was as low as 5 ppm. No changes such as cracks were observed in the resin layer even in the property evaluation test. On the other hand, in the comparative example, although the same polyimide resin was used for the resin layer, the average linear expansion coefficient was as high as 59 ppm, and the difference between the average linear expansion coefficient and the metal layer was about 50 ppm. Therefore, it is considered that the resin layer was cracked in the heat resistance evaluation. The substrate of the present invention was considered to be suitable for use as a reflective liquid crystal display substrate without any problem in solvent resistance, alignment agent resistance, and liquid crystal resistance.
【0024】[0024]
【発明の効果】以上述べたように、本発明の方法によれ
ば従来の技術ではすべてを満足できなかった反射型液晶
表示基板の性能に於いて、安価で、割れにくく、絶縁性
に優れると共に、電極の亀裂を生じさせない特徴を持つ
反射型液晶表示基板を供給する事が可能となった。As described above, according to the method of the present invention, in the performance of the reflection type liquid crystal display substrate, all of which could not be satisfied by the conventional technique, the reflection type liquid crystal display substrate is inexpensive, hardly cracked, and has excellent insulating properties. As a result, it has become possible to supply a reflective liquid crystal display substrate having the characteristic of not causing cracks in the electrodes.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柴原 澄夫 東京都品川区東品川2丁目5番8号 住友 ベークライト株式会社内 Fターム(参考) 2H090 HB08X HB09X HC07 HC08 JA06 JA09 JA19 JB01 JB03 JC07 JD18 2H091 FA14X FA14Z FD06 GA07 LA04 LA11 4J043 PA02 QB15 QB26 QB31 RA05 RA35 SA06 SA42 SA47 SA51 SA72 SB01 TA06 TA22 TA41 TA71 TB01 UA111 UA112 UA121 UA122 UA131 UA132 UA141 UA142 UA151 UA152 UA161 UA162 UA171 UA172 UB401 UB402 VA041 ZB23 5C094 AA47 BA43 DA13 EB02 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Sumio Shibahara 2-5-8 Higashishinagawa, Shinagawa-ku, Tokyo Sumitomo Bakelite Co., Ltd. F-term (reference) 2H090 HB08X HB09X HC07 HC08 JA06 JA09 JA19 JB01 JB03 JC07 JD18 2H091 FA14X FA14Z FD06 GA07 LA04 LA11 4J043 PA02 QB15 QB26 QB31 RA05 RA35 SA06 SA42 SA47 SA51 SA72 SB01 TA06 TA22 TA41 TA71 TB01 UA111 UA112 UA121 UA122 UA131 UA132 UA141 UA142 UA151 UA152 UA161 UA47 ABA4A1A UA172 UA172 UA172 UA172 UA172 UA172 UA172
Claims (8)
ある金属層と、30〜200℃での平均線膨張係数が−
10〜50ppmである主鎖にイミド結合を有する樹脂
層とからなる積層シートを使用してなる反射型液晶表示
基板。At least a metal layer having a thickness of 50 to 700 μm and an average linear expansion coefficient at 30 to 200 ° C.
A reflective liquid crystal display substrate using a laminated sheet comprising a resin layer having an imide bond in the main chain at 10 to 50 ppm.
との平均線膨張係数の差が、0〜30ppmである請求
項1記載の反射型液晶表示基板。2. The reflective liquid crystal display substrate according to claim 1, wherein the difference in the average linear expansion coefficient between the metal layer and the polyimide at 30 to 200 ° C. is 0 to 30 ppm.
求項1または2記載の反射型液晶表示基板。3. The reflective liquid crystal display substrate according to claim 1, wherein the thickness of the resin layer is 1 to 700 μm.
請求項1〜3何れか1項記載の反射型液晶表示基板。4. The reflective liquid crystal display substrate according to claim 1, wherein a resin layer is formed on both sides of the metal layer.
る請求項1〜4何れか1項記載の反射型液晶表示基板。5. The reflective liquid crystal display substrate according to claim 1, wherein the total thickness of the substrate is 51 to 1100 μm.
化性ポリイミドを主成分とすることを特徴とする請求項
1〜5何れか1項記載の反射型液晶表示基板。6. The reflective liquid crystal display substrate according to claim 1, wherein the resin layer having an imide bond in a main chain is mainly composed of a thermosetting polyimide.
型ポリイミドを主成分とすることを特徴とする請求項1
〜6何れか1項記載の反射型液晶表示基板。7. The resin layer having an imide bond in a main chain mainly comprising a condensation type polyimide.
7. The reflective liquid crystal display substrate according to any one of claims 6 to 6.
二無水物と、式2に示す芳香族ジアミンから合成される
事を特徴とする請求項7記載の反射型液晶表示基板。 【化1】 (R、R’はアルキル基、炭素数がC1 〜C3のアルコ
キシ基、アシル基、ハロゲンを示し、同じでも異なって
も良い。x、yは同一芳香環上の置換基数を示し、x=
0〜3、y=0〜3の整数で同じでも異なっても良い。
n=0〜5の整数) 【化2】 (R、R’はアルキル基、炭素数がC1 〜C3のアルコ
キシ基、アシル基、ハロゲンを示し、同じでも異なって
も良い。x、yは同一芳香環上の置換基数を示し、x=
0〜4、y=0〜4の整数で同じでも異なっても良い。
n=0〜5の整数)8. The reflective liquid crystal display substrate according to claim 7, wherein the condensed polyimide is synthesized from an aromatic dianhydride represented by Formula 1 and an aromatic diamine represented by Formula 2. Embedded image (R and R 'each represent an alkyl group, an alkoxy group having 1 to 3 carbon atoms, an acyl group, or a halogen, and may be the same or different. X and y each represent the number of substituents on the same aromatic ring; =
The integers of 0 to 3 and y = 0 to 3 may be the same or different.
(n = an integer from 0 to 5) (R and R ′ represent an alkyl group, an alkoxy group having 1 to 3 carbon atoms, an acyl group, or a halogen, and may be the same or different. X and y represent the number of substituents on the same aromatic ring; =
0 to 4, y = 0 to 4 may be the same or different.
n = 0 to 5)
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|---|---|---|---|
| JP2001088540A JP2002287121A (en) | 2001-03-26 | 2001-03-26 | Substrate for reflective liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001088540A JP2002287121A (en) | 2001-03-26 | 2001-03-26 | Substrate for reflective liquid crystal display |
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|---|---|
| JP2002287121A true JP2002287121A (en) | 2002-10-03 |
Family
ID=18943617
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001088540A Pending JP2002287121A (en) | 2001-03-26 | 2001-03-26 | Substrate for reflective liquid crystal display |
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| Country | Link |
|---|---|
| JP (1) | JP2002287121A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006508406A (en) * | 2002-11-26 | 2006-03-09 | イー−インク コーポレイション | Flexible electronic circuit and display |
| US7579054B2 (en) | 2004-06-25 | 2009-08-25 | Sumitomo Chemical Company, Limited | Substrate for flexible displays |
| WO2014199965A1 (en) * | 2013-06-10 | 2014-12-18 | 日産化学工業株式会社 | Resin composition for display substrates, resin thin film for display substrates, and method for producing resin thin film for display substrates |
-
2001
- 2001-03-26 JP JP2001088540A patent/JP2002287121A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006508406A (en) * | 2002-11-26 | 2006-03-09 | イー−インク コーポレイション | Flexible electronic circuit and display |
| JP4885541B2 (en) * | 2002-11-26 | 2012-02-29 | イー インク コーポレイション | Backplane and electro-optic display |
| US7579054B2 (en) | 2004-06-25 | 2009-08-25 | Sumitomo Chemical Company, Limited | Substrate for flexible displays |
| WO2014199965A1 (en) * | 2013-06-10 | 2014-12-18 | 日産化学工業株式会社 | Resin composition for display substrates, resin thin film for display substrates, and method for producing resin thin film for display substrates |
| CN105283486A (en) * | 2013-06-10 | 2016-01-27 | 日产化学工业株式会社 | Resin composition for display substrates, resin thin film for display substrates, and method for producing resin thin film for display substrates |
| KR20160019466A (en) * | 2013-06-10 | 2016-02-19 | 닛산 가가쿠 고교 가부시키 가이샤 | Resin composition for display substrates, resin thin film for display substrates, and method for producing resin thin film for display substrates |
| JPWO2014199965A1 (en) * | 2013-06-10 | 2017-02-23 | 日産化学工業株式会社 | Resin composition for display substrate, resin thin film for display substrate, and method for producing resin thin film for display substrate |
| CN105283486B (en) * | 2013-06-10 | 2017-09-29 | 日产化学工业株式会社 | The manufacture method of display base plate resin combination, display base plate resin film and display base plate resin film |
| KR102168594B1 (en) | 2013-06-10 | 2020-10-21 | 닛산 가가쿠 가부시키가이샤 | Resin composition for display substrates, resin thin film for display substrates, and method for producing resin thin film for display substrates |
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