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JP2002286962A - Method for producing fine particle thin film - Google Patents

Method for producing fine particle thin film

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Publication number
JP2002286962A
JP2002286962A JP2001086827A JP2001086827A JP2002286962A JP 2002286962 A JP2002286962 A JP 2002286962A JP 2001086827 A JP2001086827 A JP 2001086827A JP 2001086827 A JP2001086827 A JP 2001086827A JP 2002286962 A JP2002286962 A JP 2002286962A
Authority
JP
Japan
Prior art keywords
thin film
fine particle
liquid
fine particles
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001086827A
Other languages
Japanese (ja)
Inventor
Shinya Maenozono
信也 前之園
Hironari Sakamoto
宏成 坂元
Yukio Yamaguchi
由岐夫 山口
Manabu Kawa
学 加和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP2001086827A priority Critical patent/JP2002286962A/en
Publication of JP2002286962A publication Critical patent/JP2002286962A/en
Pending legal-status Critical Current

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  • Application Of Or Painting With Fluid Materials (AREA)
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Abstract

(57)【要約】 【解決手段】蒸気圧及び表面張力を異にする2種以上の
液体を含有し、かつ均一組成を有する液体混合物から成
る媒質中に、凝集相微粒子を分散し、該微粒子分散液を
基板表面上に流延して液膜を形成させ、該液膜から前記
媒質の一部を気化除去することにより、該微粒子を該基
板表面に単層もしくは複数層に展開する。 【発明の効果】本発明の微粒子薄膜の製造方法により、
微粒子を基板上に六方晶格子状又は正方晶格子状に規則
的に配列することが極めて高速に行われる。かかる微粒
子薄膜はフォトクロミック結晶材料として光導波路デバ
イスなど光学用途に有用である。
(57) Abstract: Fine particles of an agglomerated phase are dispersed in a medium comprising a liquid mixture containing two or more liquids having different vapor pressures and surface tensions and having a uniform composition. The dispersion liquid is cast on a substrate surface to form a liquid film, and a part of the medium is vaporized and removed from the liquid film, whereby the fine particles are spread on the substrate surface in a single layer or a plurality of layers. According to the method for producing a fine particle thin film of the present invention,
The fine particles are regularly arranged on the substrate in a hexagonal lattice or a tetragonal lattice at an extremely high speed. Such a fine particle thin film is useful as a photochromic crystal material for optical applications such as an optical waveguide device.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は微粒子薄膜の製造方
法に関する。本発明の微粒子薄膜の製造方法によれば、
例えば該微粒子が六方晶格子状又は正方晶格子状等の有
用な規則配列をとって含有された微粒子薄膜を高速で得
ることができる。かかる微粒子薄膜は例えばフォトニッ
ク結晶材料として光導波路デバイス等、様々な光学用途
に利用できる。
[0001] The present invention relates to a method for producing a fine particle thin film. According to the method for producing a fine particle thin film of the present invention,
For example, a fine particle thin film containing the fine particles in a useful regular arrangement such as a hexagonal lattice or a tetragonal lattice can be obtained at high speed. Such a fine particle thin film can be used as a photonic crystal material for various optical applications such as an optical waveguide device.

【0002】[0002]

【従来の技術】近年、フォトニック結晶に関する研究開
発が盛んに行われている。フォトニック結晶とは、光の
波長と同程度のディメンジョン(例えば可視光線の場合
にはサブミクロンのオーダー程度)で屈折率の周期的変
化を有する物質内部においてある特定波長の光が存在し
えないという禁制波長の出現を利用する材料であり、か
かる禁制波長がちょうど半導体結晶における電子遷移禁
制帯の形成と類似であることから命名された術語であ
る。従って、フォトニック結晶としての機能を有する材
料中に任意形状の貫通経路を設置すると該禁制波長の光
は該貫通経路の空間のみにおいて導波可能となるため、
複雑かつ微細な形状の光導波路の形成手段となる。
2. Description of the Related Art In recent years, research and development on photonic crystals have been actively conducted. A photonic crystal means that light of a specific wavelength cannot exist inside a substance having a periodic change in refractive index with a dimension similar to the wavelength of light (for example, on the order of submicrons in the case of visible light). Is a material that makes use of the appearance of forbidden wavelengths, and is a term named because such forbidden wavelengths are exactly similar to the formation of electron transition forbidden bands in semiconductor crystals. Therefore, if a through-path of an arbitrary shape is provided in a material having a function as a photonic crystal, light of the forbidden wavelength can be guided only in the space of the through-path,
It becomes a means for forming an optical waveguide having a complicated and fine shape.

【0003】微粒子を格子状に配列した薄膜をフォトニ
ック結晶として利用する概念は公知であるが、その性能
の向上には該微粒子の粒径が揃っていることと格子状配
列の規則性が高いことが望ましい。かかる微粒子の配列
に関する従来技術文献としては、例えばN.D.Den
kovら;Langmuir,8巻,3183頁(19
92)やA.S.Dimitrovら;Langmui
r,12巻,1303頁(1996)等が挙げられる
が、これらの技術では、例えば前記のDimitrov
ら著の文献記載の手法を用いると、気温24℃,湿度5
0%の条件において、粒径450nm,微粒子個数濃度
3.6×1017個/m3のサスペンションを用いた場
合、塗布の線速度として毎時2cm程度の比較的長時間
を要する製造工程が必要であるため産業上の利用に制限
があった。
Although the concept of using a thin film in which fine particles are arranged in a lattice form as a photonic crystal is known, improvement of the performance requires that the particle diameters of the fine particles are uniform and the regularity of the lattice arrangement is high. It is desirable. Prior art documents relating to the arrangement of such fine particles include, for example, N.S. D. Den
Kov et al; Langmuir, 8, 3183 (19
92) and A. S. Dimitrov et al .; Langmui
r, vol. 12, p. 1303 (1996). In these techniques, for example, the aforementioned Dimitrov
Using the method described in the literature of the authors et al.
When a suspension having a particle diameter of 450 nm and a fine particle number concentration of 3.6 × 10 17 particles / m 3 is used under the condition of 0%, a manufacturing process which requires a relatively long time of about 2 cm / hour as a coating linear velocity is required. For this reason, there were restrictions on industrial use.

【0004】[0004]

【発明が解決しようとする課題】本発明は前記の実情に
鑑みてなされたものであり、その目的は、微粒子が高度
に格子配列してなる微粒子薄膜を高速で製造する方法を
提供することに存する。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for producing a fine particle thin film in which fine particles are highly arranged in a lattice at a high speed. Exist.

【0005】[0005]

【課題を解決するための手段】本発明者らは、蒸気圧及
び表面張力の異なる2種の液体の混合物を媒質とし微粒
子を分散した微粒子分散液を基板上に薄膜状に塗布した
場合、該液体の蒸発速度差及び表面張力差に起因するマ
ランゴニ不安定性を駆動力とする該微粒子の高速拡散と
微粒子に作用する横毛管力による集積が可能であると考
え、かかる仮説に基づき系統的な実験を重ねた結果、該
微粒子分散液に基板を浸漬し該基板を一定の条件下で引
き上げることで微粒子が高度に格子配列した薄膜構造と
なることを発見して本発明に到達した。
Means for Solving the Problems The present inventors have found that when a fine particle dispersion liquid in which fine particles are dispersed in a mixture of two kinds of liquids having different vapor pressures and surface tensions as a medium is applied on a substrate in a thin film form, It is thought that high-speed diffusion of the fine particles driven by Marangoni instability caused by the difference in evaporation rate and surface tension of the liquid and the accumulation by the horizontal capillary force acting on the fine particles are possible. As a result, the inventors have found that a substrate is immersed in the fine particle dispersion and the substrate is pulled up under a certain condition to form a thin film structure in which fine particles are highly lattice-arranged, and the present invention has been achieved.

【0006】即ち、本発明の第1の要旨は、蒸気圧及び
表面張力を異にする2種以上の液体を含有し、かつ均一
組成を有する液体混合物から成る媒質中に、凝集相微粒
子を分散し、該微粒子分散液を基板表面上に流延して液
膜を形成させ、該液膜から前記媒質の一部を気化除去す
ることにより、該微粒子を該基板表面に単層もしくは複
数層に展開することを特徴とする微粒子薄膜の製造方法
に存する。また本発明の第2の要旨は、基板上に微粒子
が六方晶格子状又は正方晶格子状に配列していることを
特徴とする前記の製造方法により得られる微粒子薄膜に
存する。
That is, a first gist of the present invention is to disperse aggregated phase fine particles in a medium comprising a liquid mixture containing two or more liquids having different vapor pressures and surface tensions and having a uniform composition. The fine particle dispersion is cast on a substrate surface to form a liquid film, and a part of the medium is vaporized and removed from the liquid film, whereby the fine particles are formed into a single layer or a plurality of layers on the substrate surface. The present invention resides in a method for producing a fine particle thin film characterized by being developed. Further, a second gist of the present invention resides in a fine particle thin film obtained by the above production method, wherein the fine particles are arranged in a hexagonal lattice or a tetragonal lattice on a substrate.

【0007】[0007]

【発明の実施の形態】以下、本発明につき詳細に説明す
る。 [凝縮相微粒子]本発明における微粒子とは、数平均粒
径が0.001〜10μm、好ましくは0.01〜1μ
mである凝縮相の微粒子である。これは、固相又は液
相、あるいはこれらの混合した状態であるゲル等から成
り、後述する液体媒質中に不溶であり、該液体媒質中に
分散した場合に分離相を形成するものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. [Condensed phase fine particles] The fine particles in the present invention have a number average particle diameter of 0.001 to 10 µm, preferably 0.01 to 1 µm.
m are condensed phase fine particles. This is composed of a solid phase, a liquid phase, a gel or the like in a mixed state thereof, and is insoluble in a liquid medium described later, and forms a separated phase when dispersed in the liquid medium.

【0008】かかる微粒子の材質の具体例としては、ポ
リスチレン等のスチレン系樹脂やポリメチルメタクリレ
ート(通称PMMA)等のアクリル系樹脂等、公知のラ
ジカル重合性モノマー類の重合体、ポリエチレンやポリ
プロピレン等の配位重合により得られる重合体、ポリカ
ーボネート、ポリアミド(ナイロン66、ナイロン6T
など)、ポリエステル、ポリイミド、ポリフェニレンエ
ーテル、ポリアリーレンスルフィド、ポリエーテルケト
ン、ポリエーテルエーテルケトン等の縮重合により得ら
れる重合体、ナイロン6やポリカプロラクトン等の開環
重合により得られる重合体、顔料等の有機物結晶、シリ
カ等の非晶性無機物質、アルミナ、チタニア、ジルコニ
ア、酸化亜鉛、酸化カドミウム等の結晶性酸化物、B
N、BP、BAs、AlN、AlP、AlAs、AlS
b、GaN、GaP、GaAs、GaSb、InN、I
nP、InAs、InSb等の組成式で表される周期表
第13族元素と周期表第15族元素との化合物(あるい
はIII−V族化合物半導体)やZnS、ZnSe、Z
nTe、CdS、CdSe、CdTe、HgS、HgS
e、HgTe等の組成式で表される周期表第12族元素
と周期表第16族元素との化合物(あるいはII−VI
族化合物半導体)等の化合物半導体類、炭素、ケイ素、
ゲルマニウム等の単体結晶半導体類、非晶炭素、カーボ
ンブラック、黒鉛等の任意の炭素材料、金、銀、白金、
パラジウム、銅、ニッケル、コバルト、鉄等の遷移金属
等が挙げられる。これらの微粒子は、コアシェル構造や
混晶構造等の複数の組成が複合した構造を有していても
よく、複数種の微粒子の混合物でもよい。
Specific examples of the material of the fine particles include known radical polymerizable monomers such as styrene resins such as polystyrene and acrylic resins such as polymethyl methacrylate (PMMA), and polyethylene and polypropylene. Polymer, polycarbonate, polyamide (nylon 66, nylon 6T) obtained by coordination polymerization
), Polymers obtained by condensation polymerization of polyester, polyimide, polyphenylene ether, polyarylene sulfide, polyetherketone, polyetheretherketone, etc., polymers obtained by ring-opening polymerization of nylon 6, polycaprolactone, etc., pigments, etc. Organic crystals, amorphous inorganic substances such as silica, crystalline oxides such as alumina, titania, zirconia, zinc oxide, cadmium oxide, B
N, BP, BAs, AlN, AlP, AlAs, AlS
b, GaN, GaP, GaAs, GaSb, InN, I
Compounds (or III-V compound semiconductors) of Group 13 elements and Group 15 elements represented by compositional formulas such as nP, InAs, and InSb, and ZnS, ZnSe, and Z
nTe, CdS, CdSe, CdTe, HgS, HgS
e, a compound of a periodic table group 12 element and a periodic table group 16 element represented by a composition formula such as HgTe (or II-VI
Compound semiconductors such as group III compound semiconductors), carbon, silicon,
Single crystal semiconductors such as germanium, amorphous carbon, carbon black, any carbon material such as graphite, gold, silver, platinum,
Transition metals such as palladium, copper, nickel, cobalt, and iron are exemplified. These fine particles may have a composite structure of a plurality of compositions such as a core-shell structure and a mixed crystal structure, or may be a mixture of a plurality of types of fine particles.

【0009】フォトニック結晶の用途を想定しかかる微
粒子の屈折率を制御する目的では、前記の各種重合体
(好ましくはポリスチレンやPMMA等のラジカル重合
で得られる重合体)の微粒子に半導体結晶や遷移金属等
の高屈折率物質を含有せしめることがしばしば有効であ
る。
For the purpose of controlling the refractive index of the fine particles assuming the use of the photonic crystal, the fine particles of the above-mentioned various polymers (preferably polymers obtained by radical polymerization such as polystyrene and PMMA) are added to the fine particles of the semiconductor crystal or transition. It is often effective to include a high refractive index substance such as a metal.

【0010】前記に例示した各種微粒子のうち、例えば
シリカ、アルミナ、チタニア、ジルコニア、酸化亜鉛、
酸化カドミウム等の酸化物は、例えば相当する金属アル
コキシド類や金属ハロゲン化物等を加水分解縮合するい
わゆるゾル−ゲル法により合成可能である。また化合物
半導体類は、前記のゾル−ゲル法の他、例えば分子ビー
ムエピタキシー法あるいはCVD法等の高真空プロセ
ス、原料水溶液を非極性有機溶媒中の逆ミセルとして存
在させ該逆ミセル相中にて結晶成長させる方法(いわゆ
る逆ミセル法)、熱分解性原料を高温の液相有機媒体に
注入して結晶成長させる方法(いわゆるホットソープ
法)等により合成可能である。炭素材料は、ベンゼンや
ナフタレン、あるいは炭素顔料が比較的大きい有機高分
子等を炭素原料として燃焼させる方法により例えば製造
可能である。遷移金属の微粒子については、G.Sch
mid編;”Clusters and Colloi
ds”,VCH社(Weinheim,1994)等に
総説されている公知の酸化還元反応を利用する金属コロ
イドの製造方法(例えば塩化金酸や硝酸銀等の遷移金属
イオン化合物又はその塩をクエン酸又はその塩や水素化
ホウ素塩等の還元剤と接触させる溶液反応等)により合
成可能である。いずれの微粒子においても、粉砕法の
他、溶液からの沈殿法や超臨界液体中での反応を利用す
る方法等の物理化学的原理を利用することもできる。
Among the various fine particles exemplified above, for example, silica, alumina, titania, zirconia, zinc oxide,
An oxide such as cadmium oxide can be synthesized by, for example, a so-called sol-gel method of hydrolyzing and condensing a corresponding metal alkoxide or metal halide. In addition, compound semiconductors, in addition to the above-described sol-gel method, for example, a high vacuum process such as molecular beam epitaxy method or CVD method, a raw material aqueous solution is present as a reverse micelle in a non-polar organic solvent, and in the reverse micelle phase. It can be synthesized by a method of growing crystals (so-called reverse micelle method), a method of injecting a thermally decomposable raw material into a high-temperature liquid-phase organic medium and growing crystals (so-called hot soap method), or the like. The carbon material can be produced, for example, by a method of burning benzene, naphthalene, an organic polymer having a relatively large carbon pigment, or the like as a carbon raw material. For the transition metal fine particles, see G.S. Sch
mid; "Clusters and Colloi
ds ", a method for producing a metal colloid utilizing a known oxidation-reduction reaction as reviewed by VCH (Weinheim, 1994) (for example, a transition metal ion compound such as chloroauric acid or silver nitrate or a salt thereof is converted to citric acid or a salt thereof). (Solution reaction in contact with a reducing agent such as a salt or a borohydride salt, etc.) For any fine particles, in addition to a pulverization method, a precipitation method from a solution or a reaction in a supercritical liquid is used. Physicochemical principles such as methods can also be used.

【0011】かかる微粒子を凝集させずに、可及的均一
に分散する目的で、有機配位子をその表面に結合するこ
とができる。かかる有機配位子の効果は、特に半導体、
金属、あるいは遷移金属の塩のような無機物質の場合に
大きく、中でも半導体あるいは金属の超微粒子の場合に
顕著となる。具体的な有機配位子の構造として、後述す
るように、メルカプト基(又はチオール基;−SH)や
ホスフィンオキシド基(P=O)を有する有機分子が半
導体あるいは金属の超微粒子の表面に強く結合するので
好適である。また、例えばY.Shiraishiら;
J.Mol.Catal.,141巻,1871頁(1
999)に記載があるように、ポリアクリル酸等の配位
性高分子も有機配位子の一例である。また、前記の各種
重合体の微粒子の場合には、プラズマ処理、コロナ放電
処理、火炎処理、オゾン処理等の表面酸化処理、あるい
はフッ素処理等の任意の化学的表面処理を施して液体へ
の分散性を制御してもよい。
In order to disperse the fine particles as uniformly as possible without agglomeration, an organic ligand can be bonded to the surface. The effects of such organic ligands are particularly
It is large in the case of an inorganic substance such as a salt of a metal or a transition metal, and is particularly remarkable in the case of a semiconductor or a metal ultrafine particle. As a specific structure of an organic ligand, as described later, an organic molecule having a mercapto group (or thiol group; -SH) or a phosphine oxide group (P = O) strongly adheres to the surface of a semiconductor or metal ultrafine particle. It is preferable because they are combined. In addition, for example, Y. Shiraishi et al .;
J. Mol. Catal. 141, 1871 (1
As described in 999), a coordinating polymer such as polyacrylic acid is also an example of the organic ligand. In the case of fine particles of the above-mentioned various polymers, any surface treatment such as plasma treatment, corona discharge treatment, flame treatment, ozone treatment, or any other chemical surface treatment such as fluorine treatment is performed to disperse the particles in a liquid. Sex may be controlled.

【0012】後述するフォトニック結晶の用途に本発明
の製造方法で得られる微粒子薄膜を使用する場合には、
該微粒子の粒径分布は可及的に小さいことが望ましく、
具体的には該微粒子の粒径の標準偏差が数平均粒径の1
0%以下であることが望ましい。かかる標準偏差はより
望ましくは7%以下、更に望ましくは5%以下である。
When a fine particle thin film obtained by the production method of the present invention is used for a photonic crystal described below,
It is desirable that the particle size distribution of the fine particles is as small as possible,
Specifically, the standard deviation of the particle size of the fine particles is 1 of the number average particle size.
Desirably, it is 0% or less. Such a standard deviation is more preferably 7% or less, and still more preferably 5% or less.

【0013】[微粒子薄膜]本発明における微粒子薄膜
とは、前記の微粒子を主体としてなる薄膜であり任意の
基板上に形成されたものである。該薄膜は、前記の微粒
子の単層(Monolayer、即ち微粒子の厚さ方向
の重なり合いのない単一の層)もしくは二粒子層(Bi
layer)等の複数層(前記の単層が複数重なり合っ
て構成された層)からなる。
[Fine particle thin film] The fine particle thin film in the present invention is a thin film mainly composed of the above fine particles and is formed on an arbitrary substrate. The thin film may be a monolayer of the aforementioned fine particles (Monolayer, that is, a single layer having no overlapping in the thickness direction of the fine particles) or a two-particle layer (Bilayer
and a plurality of layers (layers in which the above-mentioned single layers are overlapped with each other).

【0014】前記の微粒子薄膜とはその膜厚が通常0.
001〜1000μm程度の範囲であり、該膜厚は好ま
しくは0.01〜100μm、更に好ましくは0.05
〜50μm程度とする。該膜厚は、必要に応じて微粒子
薄膜中において連続的あるいは不連続的に変化させても
よい。かかる微粒子薄膜には前記の微粒子以外の成分を
含有させてもよい。例えば熱可塑性樹脂や架橋性硬化樹
脂等の合成樹脂類やワックス類等の材料を該微粒子の隙
間を埋めるマトリクスとして含有させてもよい。前記の
微粒子薄膜中において前記の微粒子の配列状態に制限は
ないが、フォトニック結晶として該微粒子薄膜を使用す
る場合には該微粒子が六方晶(Hexagonal)格
子状又は正方晶(Tetragonal)格子状に配列
していることが好ましい。中でも格子状配列の均質性の
点で、六方晶格子状の配列が最も好ましいる。
The above-mentioned fine particle thin film usually has a thickness of 0.1 μm.
The thickness is about 001 to 1000 μm, and the thickness is preferably 0.01 to 100 μm, more preferably 0.05 to 100 μm.
About 50 μm. The film thickness may be changed continuously or discontinuously in the fine particle thin film as needed. Such a fine particle thin film may contain components other than the fine particles. For example, a material such as a synthetic resin such as a thermoplastic resin or a crosslinkable cured resin, or a wax may be contained as a matrix for filling the gaps between the fine particles. There is no limitation on the arrangement state of the fine particles in the fine particle thin film, but when the fine particle thin film is used as a photonic crystal, the fine particles have a hexagonal (Hexagonal) lattice shape or a tetragonal (Tetragonal) lattice shape. Preferably, they are arranged. Among them, the hexagonal lattice arrangement is most preferable in terms of the lattice arrangement homogeneity.

【0015】[薄膜用基板]前記の微粒子薄膜が形成さ
れる基板としては固体の基板が通常用いられ、その材質
としては、例えば樹脂、有機物結晶、紙、木材、ダイヤ
モンド、ガラス、セラミクス、無機物結晶、金属、半導
体等が挙げられる。かかる基板は必ずしも平面状でなく
てもよく、連続生産性を上げる等の目的で長いベルト状
としてもよい。かかるベルト状基板を使用する場合、前
記の微粒子薄膜を形成したあと所望の大きさにこれを裁
断してもよい。
[Substrate for Thin Film] A solid substrate is usually used as a substrate on which the fine particle thin film is formed. Examples of the material include resin, organic crystal, paper, wood, diamond, glass, ceramics, and inorganic crystal. , Metals, semiconductors and the like. Such a substrate does not necessarily have to be planar, and may be in the form of a long belt for the purpose of increasing continuous productivity. When such a belt-like substrate is used, the above-mentioned fine particle thin film may be formed and then cut into a desired size.

【0016】[微粒子薄膜の形成]本発明は、前記の微
粒子薄膜を高速で製造する方法を提供するものであり、
その効果の源泉と考えられる作用は、(1)基板上に流
延された微粒子分散液の液膜表面に生じる表面張力のマ
ランゴニ不安定性により高速に該微粒子を液膜表面に展
開する作用と、(2)液膜から、媒質を構成する一方の
液体の体積分率が減少することに伴い該微粒子に働く横
毛管力による集積作用の2点である。
[Formation of Fine Particle Thin Film] The present invention provides a method for producing the above fine particle thin film at a high speed.
The effects considered to be the source of the effect are as follows: (1) the action of rapidly spreading the fine particles on the liquid film surface due to Marangoni instability of the surface tension generated on the liquid film surface of the fine particle dispersion liquid cast on the substrate; (2) There are two points of the accumulation action by the horizontal capillary force acting on the fine particles as the volume fraction of one liquid constituting the medium decreases from the liquid film.

【0017】即ち、蒸気圧と表面張力の異なる少なくと
も2種の液体の混合物を主体とする媒質に前記の微粒子
が分散した微粒子分散液を用い、基板状において前記の
2作用を利用して製膜する方法である。ここでいう液膜
表面に生じる表面張力のマランゴニ不安定性とは、複数
種の液体混合物の液相表面において、各液体分子の気化
速度が異なることから該液相表面における化学組成分布
が非平衡状態となり、かかる非平衡状態により該液相表
面における表面張力分布が不安定な非平衡状態が出現す
る現象である。かかるマランゴニ不安定性の出現は比較
的速い非平衡過程であるので、これに起因する表面張力
差により微粒子を極めて素早く液膜表面に展開せしめる
ことが可能となる。
That is, a fine particle dispersion in which the fine particles are dispersed in a medium mainly composed of a mixture of at least two liquids having different vapor pressures and surface tensions is used, and a film is formed on the substrate using the above two actions. How to The Marangoni instability of the surface tension that occurs on the surface of the liquid film here means that the chemical composition distribution on the liquid phase surface is in a non-equilibrium state because the vaporization rate of each liquid molecule is different on the liquid phase surface of multiple liquid mixtures. This is a phenomenon in which a non-equilibrium state in which the surface tension distribution on the liquid phase surface is unstable due to the non-equilibrium state appears. Since the appearance of the Marangoni instability is a relatively fast non-equilibrium process, it is possible to spread the fine particles on the surface of the liquid film very quickly due to the difference in surface tension caused by this.

【0018】また、前記の横毛管力による集積作用と
は、前記のマランゴニ不安定性の利用により極めて素早
く基板表面に展開した微粒子同士が、その隙間の毛管効
果に起因する媒質分子の物質移動とともに基板表面方向
(即ち横方向)に互いに集積する作用である。つまり、
媒質分子の気化により媒質の基板表面の液膜の液相の厚
さが微粒子の直径よりも小さくなり始めると、メニスカ
ス効果により該液相の液面は該微粒子近傍で曲面を形成
するが、かかる曲面の形成に必要な媒質の物質移動を促
す大きな駆動力が前記の横毛管力である。
Further, the above-mentioned accumulation action by the lateral capillary force means that the fine particles spread on the substrate surface very quickly by utilizing the above-mentioned Marangoni instability, together with the mass transfer of the medium molecules caused by the capillary effect in the gap, the substrate. This is the action of accumulating each other in the surface direction (that is, the lateral direction). That is,
When the liquid phase thickness of the liquid film on the substrate surface of the medium starts to become smaller than the diameter of the fine particles due to the vaporization of the medium molecules, the liquid surface of the liquid phase forms a curved surface near the fine particles due to the meniscus effect. The above-mentioned transverse capillary force is a large driving force for promoting mass transfer of a medium necessary for forming a curved surface.

【0019】本発明により微粒子の複数層を形成する場
合は、前記の横毛管力による粒子の集積過程よりも早
く、媒質分子の気化に伴う粒子濃度の上昇により粒子間
凝集を進行させることにより可能になる。このような複
数層の形成は、具体的には、粒子間凝集力の粒子濃度依
存性を調整するために、界面活性剤や高分子物質等の添
加剤の使用、あるいは水素イオン濃度(pH)や温度等
の物理化学的条件の制御により適正化することが可能で
ある。
In the case of forming a plurality of layers of fine particles according to the present invention, it is possible to advance the inter-particle aggregation by increasing the particle concentration due to the vaporization of the medium molecules earlier than the above-mentioned particle accumulation process due to the lateral capillary force. become. The formation of such a plurality of layers is performed, specifically, by using an additive such as a surfactant or a polymer substance or adjusting the hydrogen ion concentration (pH) in order to adjust the dependence of the cohesive force between particles on the particle concentration. It can be optimized by controlling physicochemical conditions such as temperature and temperature.

【0020】[液体媒質]媒質を構成する液体として
は、蒸気圧及び表面張力を異にする2種以上の液体が選
択される。更に、該2種以上の液体は、液膜形成温度に
おいて、相互に無限大の溶解度を有する均一溶解組成物
を形成することが必要である。2種の液体間における蒸
気圧の相違は、液膜形成温度における蒸気圧の比とし
て、通常1.5〜20、好ましくは2〜8、更に好まし
くは3〜7程度とする(即ち、この蒸気圧の比は、蒸気
圧の小さい液体の蒸気圧を1とした時の、蒸気圧の大き
い方の蒸気圧を指す)。また、2種の液体間における表
面張力の相違は、表面張力の比として、通常1.5〜2
0、好ましくは2〜10、更に好ましくは3〜7程度と
する(即ち、この表面張力の比は、表面張力の小さい液
体の表面張力を1とした時の、表面張力の大きい方の表
面張力を指す。また、液膜形成温度が一方の液体媒質の
沸点を超える場合には、該沸点よりも低い5℃以内の温
度範囲で実測あるいは計算可能な表面張力の値を代用す
る)。
[Liquid Medium] As the liquid constituting the medium, two or more liquids having different vapor pressures and surface tensions are selected. Further, it is necessary that the two or more liquids form a homogeneously dissolved composition having mutually infinite solubility at a liquid film forming temperature. The difference in vapor pressure between the two liquids is usually about 1.5 to 20, preferably about 2 to 8, and more preferably about 3 to 7 as a ratio of the vapor pressure at the liquid film forming temperature (that is, the vapor pressure is about 3 to 7). The pressure ratio refers to the vapor pressure of the larger vapor pressure when the vapor pressure of the liquid having the smaller vapor pressure is set to 1.) The difference in surface tension between the two liquids is usually 1.5 to 2 as a ratio of the surface tension.
0, preferably about 2 to 10, and more preferably about 3 to 7 (that is, the ratio of the surface tension is the surface tension of the larger surface tension when the surface tension of the liquid having the smaller surface tension is 1). When the liquid film forming temperature exceeds the boiling point of one liquid medium, the surface tension value that can be measured or calculated in a temperature range of 5 ° C. lower than the boiling point is used instead.)

【0021】該蒸気圧の比は、一方の液体が早く蒸発す
ることにより生じるマランゴニ不安定性を得るうえで上
記の範囲が選択される。上記範囲未満であっては充分な
マランゴニ不安定性が発生せず、一方余りに蒸気圧比が
相違すると蒸気圧の小さい成分の過度に急激な気化等に
より微粒子の良好な展開が困難となり好ましくない。そ
して、蒸気圧と表面張力の関係では、蒸気圧の大きい媒
質液体の表面張力が、蒸気圧の小さい媒質液体の表面張
力より小さいことが好ましい。即ち、残留する媒質液体
の表面張力が気化する媒質液体の表面張力よりも大きい
ことが好ましい。
The vapor pressure ratio is selected from the above range in order to obtain Marangoni instability caused by one of the liquids evaporating quickly. If the ratio is less than the above range, sufficient Marangoni instability does not occur. On the other hand, if the vapor pressure ratio is too different, it is difficult to favorably disperse fine particles due to excessively rapid vaporization of components having a low vapor pressure. In the relationship between the vapor pressure and the surface tension, it is preferable that the surface tension of the medium liquid having a high vapor pressure is smaller than the surface tension of the medium liquid having a low vapor pressure. That is, it is preferable that the surface tension of the remaining medium liquid is larger than the surface tension of the medium liquid that evaporates.

【0022】かかる条件に合致する2種の液体の組み合
わせには特に制限はなく、各種の組合せが利用可能であ
る。液体の極性は分散させる微粒子との濡れ性を考慮し
て適宜に選ばれる。例えば、水と低級アルコール類(例
えばメタノール、エタノール、n−プロピルアルコー
ル、イソプロピルアルコール等の炭素数3以下のアルコ
ール類)の組み合わせ、水と低級ケトン類(例えばアセ
トンやメチルエチルケトン等の炭素数4以下のケトン
類)、水と低級エーテル類(例えばジエチルエーテルや
テトラヒドロフラン等の炭素数4以下のエーテル類)の
組み合わせ、水と炭素数4以下のエステル類(例えば蟻
酸n−ブチル、蟻酸イソプロピル、酢酸エチル、酢酸メ
チル、プロピオン酸メチル等)等の水を用いる組み合わ
せ;前記水の代わりに、N,N−ジメチルホルムアミド
(略称DMF)等のアミド系溶剤やピリジン等の含窒素
芳香族類等の含窒素有機溶媒類を用いる組み合わせ;D
MFやピリジン等の含窒素有機溶媒類と水の組み合わせ
等の極性の大きな液体混合系が挙げられる。これらの組
合せにおいて、蒸気圧の大きい有機溶剤類の表面張力は
残留する水のそれより小さくなるので好ましい。
There are no particular restrictions on the combination of the two liquids meeting the above conditions, and various combinations can be used. The polarity of the liquid is appropriately selected in consideration of the wettability with the fine particles to be dispersed. For example, a combination of water and lower alcohols (for example, alcohols having 3 or less carbon atoms such as methanol, ethanol, n-propyl alcohol, and isopropyl alcohol), and water and lower ketones (for example, having 4 or less carbon atoms such as acetone and methyl ethyl ketone). Ketones), a combination of water and lower ethers (eg, ethers having 4 or less carbon atoms such as diethyl ether and tetrahydrofuran), esters with water and 4 or less carbon atoms (eg, n-butyl formate, isopropyl formate, ethyl acetate, A combination using water such as methyl acetate, methyl propionate, etc .; instead of the water, an amide solvent such as N, N-dimethylformamide (abbreviated as DMF) or a nitrogen-containing organic compound such as nitrogen-containing aromatics such as pyridine. Combination using solvents; D
A highly polar liquid mixture system such as a combination of water and a nitrogen-containing organic solvent such as MF or pyridine. In these combinations, the organic solvent having a high vapor pressure has a lower surface tension than that of the remaining water, which is preferable.

【0023】一方、高沸点炭化水素類と低沸点炭化水素
類との組み合わせ例として、オクタン、イソオクタン、
ノナン、デカン等の炭素数8〜10程度の比較的高沸点
の脂肪族炭化水素類とペンタン、ヘキサン、ヘプタン等
の炭素数5〜7程度の比較的低沸点の脂肪族炭化水素類
との組み合わせ、キシレンやクロロベンゼン等の比較的
高沸点の芳香族炭化水素類とトルエンやベンゼン等の比
較的低沸点の芳香族炭化水素類との組み合わせ、キシレ
ン、クロロベンゼン、トルエン等の芳香族炭化水素類と
より揮発しやすいペンタン、ヘキサン、ヘプタン等の比
較的低沸点の脂肪族炭化水素類との組み合わせ等が挙げ
られ、更にこれら炭化水素類と前記の低級アルコール
類、低級ケトン類、低級エーテル類、炭素数4以下のエ
ステル類、含窒素有機溶媒類、あるいはクロロホルムや
塩化メチレン等のハロゲン化炭化水素類等の任意の極性
有機溶剤との組み合わせ、該極性有機溶剤同士の組み合
わせ等も例示される。
On the other hand, examples of combinations of high-boiling hydrocarbons and low-boiling hydrocarbons include octane, isooctane,
Combination of relatively high-boiling aliphatic hydrocarbons having about 8 to 10 carbon atoms such as nonane and decane with relatively low-boiling aliphatic hydrocarbons having about 5 to 7 carbon atoms such as pentane, hexane and heptane , A combination of relatively high-boiling aromatic hydrocarbons such as xylene and chlorobenzene with relatively low-boiling aromatic hydrocarbons such as toluene and benzene, and xylene, chlorobenzene, and aromatic hydrocarbons such as toluene Combinations with relatively low-boiling aliphatic hydrocarbons such as pentane, hexane, heptane and the like which are easy to volatilize, and the like, and further, these hydrocarbons and the lower alcohols, lower ketones, lower ethers, and carbon number Combination with any polar organic solvent such as 4 or less esters, nitrogen-containing organic solvents, or halogenated hydrocarbons such as chloroform and methylene chloride Allowed, combinations between polar organic solvent is also illustrated.

【0024】ここに例示したような2種の液体の組み合
わせに、第3の液体として、2種の液体系に均一混合可
能な任意種類の液体を追加混合してもよい。例えば、水
−メタノール−テトラヒドロフラン、水−DMF−酢酸
メチル、ヘキサン−オクタンートルエン、ベンゼン−ク
ロロベンゼン−クロロホルム系などが例示される。ま
た、相互に完全溶解しない2種の液体系に、均一混合を
助成する第3の液体を追加混合してもよい。例えば、水
−メタノール−ベンゼンや水−メタノール−トルエン等
の含水アルコール系に芳香族炭化水素を追加混合した
系、水−メタノール−ジエチルエーテル等の含水アルコ
ール系に直鎖状脂肪族エーテル類を追加混合した系、水
−メタノール−酢酸エチル等の含水アルコール系に脂肪
酸エステル類を追加混合した系などが例示される。
As the third liquid, any kind of liquid that can be uniformly mixed with the two liquid systems may be additionally mixed with the combination of the two liquids exemplified here. For example, water-methanol-tetrahydrofuran, water-DMF-methyl acetate, hexane-octane-toluene, benzene-chlorobenzene-chloroform and the like are exemplified. Further, a third liquid that promotes uniform mixing may be additionally mixed with two types of liquid systems that do not completely dissolve in each other. For example, a system in which an aromatic hydrocarbon is additionally mixed with a water-containing alcohol system such as water-methanol-benzene or water-methanol-toluene, and a linear aliphatic ether is added to a water-containing alcohol system such as water-methanol-diethyl ether. Examples thereof include a mixed system and a system in which a fatty acid ester is additionally mixed with a water-containing alcohol system such as water-methanol-ethyl acetate.

【0025】これらの例示のうち、水を必須液体として
使用する場合が環境負荷や汚染性が低い点や液体混合物
の表面張力(即ち前記の横毛管力)の大きさの点で好ま
しく、中でも水と前記の低級アルコール類との組み合わ
せがより好ましく、水とメタノールの組み合わせは最も
好ましいものの1つである。
Of these examples, the case where water is used as an essential liquid is preferred in terms of low environmental load and low pollution and the surface tension of the liquid mixture (ie, the above-mentioned transverse capillary force). And the above-mentioned lower alcohols are more preferred, and the combination of water and methanol is one of the most preferred.

【0026】前記の少なくとも2種の液体の組み合わせ
における混合比は、使用する微粒子の性質(表面の濡れ
性や比重等)や後述する諸条件(温度、基板の引き抜き
速度や引き抜き角度等)により調整される。一般的に
は、表面張力の大きい液体100重量部に対して表面張
力の小さい液体が5〜5000重量部、好ましくは10
〜1000重量部使用される。例えば水とメタノールの
組み合わせを使用する場合、水とメタノールの重量比と
して通常1:0.1〜1:50、好ましくは1:0.5
〜1:20、更に好ましくは1:1〜1:10程度とす
る。
The mixing ratio in the combination of the at least two liquids is adjusted by the properties of the fine particles used (surface wettability, specific gravity, etc.) and the various conditions described later (temperature, substrate drawing speed, drawing angle, etc.). Is done. Generally, a liquid having a low surface tension is 5 to 5000 parts by weight, preferably 10 to 100 parts by weight of a liquid having a high surface tension.
10001000 parts by weight are used. For example, when a combination of water and methanol is used, the weight ratio of water to methanol is usually 1: 0.1 to 1:50, preferably 1: 0.5.
1 : 1: 20, more preferably about 1: 11〜1: 10.

【0027】[分散液の製造]前記の少なくとも2種の
液体の混合物を主体とする媒質に前記の微粒子が分散し
た微粒子分散液における該微粒子の量は、使用する微粒
子の性質(表面の濡れ性や比重等)や後述する諸条件
(温度、基板の引き抜き速度や引き抜き角度等)により
調整されるが、重量百分率として通常0.01〜30重
量%、好ましくは0.1〜20重量%、更に好ましくは
1〜10重量%程度とする。
[Preparation of Dispersion] The amount of the fine particles in the fine particle dispersion in which the fine particles are dispersed in a medium mainly composed of a mixture of at least two liquids described above depends on the properties of the fine particles used (surface wettability). And specific gravity, etc.) and various conditions (temperature, drawing speed and drawing angle of the substrate, etc.) described later, but are usually 0.01 to 30% by weight, preferably 0.1 to 20% by weight, and more preferably 0.1 to 20% by weight as a weight percentage. Preferably, it is about 1 to 10% by weight.

【0028】基板に塗布される微粒子表面間の斥力が適
切な範囲であることが本発明の製造方法において好まし
い。これは、該斥力が塗布時に小さすぎると塗布過程に
おいて微粒子は速度論的にとる初期配列状態に固定され
やすいので高度に規則的な配列に再配列することを妨
げ、逆に該斥力が大きすぎるとある瞬間にたとえ高度に
規則的な配列を達成できてもこれを維持する能力が小さ
いため再び望ましくない不規則配列に変化してしまう確
率が高まる、といった機構によるものと推定される。か
かる微粒子表面間の好ましい斥力条件として、微粒子分
散液において測定される微粒子表面のゼータ電位は、通
常−20〜−85ミリボルト(mV)である。この値は
好ましくは−30〜−80mV、更に好ましくは−40
〜−75mV程度の範囲とする。かかるゼータ電位は、
微粒子分散液の連続相をなす前記の媒質が例えば水とメ
タノールの混合物のようにプロトン解離性である場合に
は、水素イオン濃度(pH)により好適に制御可能であ
る。かかるpHの値としては、通常4〜12、好ましく
は5〜11、更に好ましくは6〜10程度の範囲とす
る。
In the manufacturing method of the present invention, it is preferable that the repulsive force between the surfaces of the fine particles applied to the substrate is within an appropriate range. This is because if the repulsive force is too small during coating, the fine particles are likely to be fixed in the initial arrangement state which takes kineticly during the coating process, so that they are not rearranged in a highly regular array, and conversely, the repulsive force is too large. Even at a certain moment, even if a highly regular arrangement can be achieved, it is presumed to be due to a mechanism that the ability to maintain the arrangement is small and the probability of changing to an undesirable irregular arrangement again increases. As a preferable repulsion condition between the surfaces of the fine particles, the zeta potential of the surface of the fine particles measured in the fine particle dispersion is usually -20 to -85 millivolt (mV). This value is preferably -30 to -80 mV, more preferably -40.
The range is about -75 mV. Such zeta potential is
When the medium forming the continuous phase of the fine particle dispersion is proton dissociating, such as a mixture of water and methanol, it can be suitably controlled by the hydrogen ion concentration (pH). The pH value is usually in the range of about 4 to 12, preferably 5 to 11, and more preferably about 6 to 10.

【0029】[基板の引き抜き]次に、前記の基板を引
き抜く操作における諸条件について以下に説明する。な
お以下に例示する諸条件は、例えば前記の媒質の沸点等
により大きく変動する場合があるので、以下の記述に限
定されるものではない。温度条件は、前記の媒質の凝固
点や沸点にもよるが、前記の微粒子分散液の液温とし
て、通常−30〜150℃、好ましくは0〜100℃、
更に好ましくは10〜70℃程度とする。なお、雰囲気
温度、即ち該微粒子分散液の接する気相の温度は、該微
粒子分散液の液温と必ずしも同じでなくてもよく、前記
の液体の気化速度を制御する目的で湿度等該液体の蒸気
圧の調整や送風措置を講じてもよい。
[Pull Out of Substrate] Next, various conditions in the operation of pulling out the substrate will be described below. Note that the conditions exemplified below are not limited to the following description because they may vary greatly depending on, for example, the boiling point of the medium. The temperature condition depends on the freezing point and boiling point of the medium, but the liquid temperature of the fine particle dispersion is usually -30 to 150 ° C, preferably 0 to 100 ° C.
More preferably, the temperature is about 10 to 70 ° C. Note that the ambient temperature, that is, the temperature of the gas phase in contact with the fine particle dispersion is not necessarily the same as the liquid temperature of the fine particle dispersion, and the temperature of the liquid such as humidity may be controlled for the purpose of controlling the vaporization rate of the liquid. Adjustment of steam pressure and ventilation measures may be taken.

【0030】前記の微粒子分散液に浸漬した前記の基板
を引き抜く場合の引き抜き線速度は、通常5〜5000
0cm/時間、好ましくは10〜10000cm/時間
程度とする。また、この時の基板の引き抜き角度(目的
とする塗布薄膜が液面と接する部分における接線と微粒
子分散液の液面とが該塗布基板を挟んでなす角。基板が
平板状の場合は、塗布薄膜と反対側の基板面と微粒子分
散液の液面とのなす角。)は、基板全面が微粒子分散液
に浸漬しない限りにおいて制限はないが、通常5〜15
0°、好ましくは5〜90°、更に好ましくは5〜60
°程度とする。
When the substrate immersed in the fine particle dispersion is pulled out, the drawing linear velocity is usually 5 to 5,000.
0 cm / hour, preferably about 10 to 10000 cm / hour. At this time, the angle at which the substrate is pulled out (the angle between the tangent line at the portion where the target coating thin film comes into contact with the liquid surface and the liquid surface of the fine particle dispersion liquid with the coating substrate interposed therebetween. The angle formed between the surface of the substrate opposite to the thin film and the liquid surface of the fine particle dispersion is not limited as long as the entire surface of the substrate is not immersed in the fine particle dispersion.
0 °, preferably 5 to 90 °, more preferably 5 to 60
°.

【0031】[薄膜の付加処理]該微粒子薄膜には、必
要に応じてこれを被覆する層、例えば摩擦や摩耗による
塗布面の機械的損傷を防止する保護層、光線吸収層、水
分や酸素ガス等の反応性低分子の透過を抑制あるいは防
止する透過遮蔽層、防眩層、反射防止層、低屈折率層等
を設けてもよい。更に、該基板と微粒子薄膜との接着性
を改善する下引き層、電極層等、任意の付加機能層を設
けて多層構造としてもよい。前記の微粒子薄膜は、後述
する膜形成工程を複数回数行った多層構造を有していて
もよく、あるいは別途製造された2枚の微粒子薄膜を貼
り合わせた2層構造で形成されていてもよい。かかる多
層構造において、各層を構成する前記の微粒子は同一で
も互いに異なっていてもよい。
[Addition treatment of thin film] The fine particle thin film may be coated with a layer, if necessary, for example, a protective layer for preventing mechanical damage of the coated surface due to friction and abrasion, a light absorbing layer, moisture and oxygen gas. And the like, may be provided with a transmission shielding layer, an antiglare layer, an antireflection layer, a low refractive index layer and the like for suppressing or preventing the transmission of reactive low molecules such as. Further, a multilayer structure may be provided by providing an optional additional functional layer such as an undercoat layer or an electrode layer for improving the adhesion between the substrate and the fine particle thin film. The fine particle thin film may have a multilayer structure in which a film forming step described later is performed a plurality of times, or may have a two-layer structure in which two separately manufactured fine particle thin films are bonded. . In such a multilayer structure, the fine particles constituting each layer may be the same or different from each other.

【0032】[微粒子薄膜の用途]前記の微粒子薄膜
は、含有される前記の微粒子の占める空間(以下「微粒
子空間」と呼ぶ)とそれ以外の空間(以下「マトリクス
空間」と呼ぶ)との屈折率差がある場合には、屈折率の
周期的な変化を有する薄膜であるのでフォトニック結晶
としての機能を有する。かかる設計を行うに当たり、該
微粒子空間の屈折率を該マトリクス空間の屈折率に対し
て大きく設計しても、逆に小さく設計してもよい。該マ
トリクス空間の屈折率は、例えば適当な屈折率を有する
合成樹脂や液体により該マトリクス空間を占めることで
好適に制御される。
[Use of Fine Particle Thin Film] The fine particle thin film is refracted in a space occupied by the fine particles contained therein (hereinafter referred to as “fine particle space”) and in a space other than the space (hereinafter referred to as “matrix space”). When there is an index difference, the thin film has a periodic change in the refractive index, and thus has a function as a photonic crystal. In performing such a design, the refractive index of the fine particle space may be designed to be larger or smaller than the refractive index of the matrix space. The refractive index of the matrix space is suitably controlled, for example, by occupying the matrix space with a synthetic resin or liquid having an appropriate refractive index.

【0033】[0033]

【実施例】以下に実施例により本発明の具体的態様を更
に詳細に説明するが、本発明はその要旨を越えない限
り、これらの実施例によって限定されるものではない。 [測定装置] (1)超高分解能走査電子顕微鏡(SEM):日立製作
所(株)製S−900を使用した。電子銃は冷陰極電解
放射型電子銃で、加速電圧は5kVとした。 (2)電気泳動光散乱光度計:大塚電子(株)製ELS
−800を使用した。光源はHe−Neレーザー(10ミ
リワット)を使用し、これによる散乱光のドップラー・
シフト量を求めることにより粒子の電気泳動速度が求
め、その値からゼータ電位を求めた。
EXAMPLES Specific examples of the present invention will be described in more detail with reference to the following Examples, which should not be construed as limiting the scope of the invention. [Measurement device] (1) Ultra-high resolution scanning electron microscope (SEM): S-900 manufactured by Hitachi, Ltd. was used. The electron gun was a cold cathode field emission electron gun, and the acceleration voltage was 5 kV. (2) Electrophoretic light scattering photometer: ELS manufactured by Otsuka Electronics Co., Ltd.
-800 was used. The light source used was a He-Ne laser (10 milliwatts), and the Doppler of the scattered light was used.
By determining the shift amount, the electrophoretic velocity of the particles was determined, and the zeta potential was determined from the value.

【0034】[実施例1〜3」実施例1〜3は、液膜形
成時の温度の影響を考察したものである。シリカ粒子の
水分散液(日本触媒(株)より供給された数平均粒径4
30nm±3%のもの)に、粒子濃度が5重量%,水と
メタノールの重量比が1:1、となるように水とメタノ
ールを加えて微粒子分散液を調製した。調製後50分後
にこの微粒子分散液(0.9mL)をホットスターラ上
のペトリ皿(内径3cm)に注入し、30%クロム酸混
酸により1日以上洗浄したシリコンウエハー基板(1c
m×4cm)を、30°の角度で浸漬させた。ホットス
ターラの温度を調整することで液温を15℃(実施例
1),49℃(実施例2),及び93℃(実施例3)と
変化させ、いずれの場合も浸漬開始から10秒後に基板
をピンセットでつまんで引き上げ、角度を浸漬時と同角
度に保って大気雰囲気(気温15℃,湿度44%)中で
乾燥させることによりシリコンウエハー基板上に微粒子
配列構造を得た。液温を変化させたこれら3つの実施例
において得られた各配列構造において比較的粒子による
被膜率の低い領域をSEMで観察したものが図1に示す
3枚の写真である。液温を上げるにしたがって粒子の2
次元配列をなす領域の面積が増大し、実施例3の液温9
3℃においては単層(Monolayer)と二粒子層
(Bilayer)の密にパッキングした薄膜がおよそ
5mm2の面積で形成された。これは、温度上昇により
蒸発速度が増加しそれに伴う微粒子拡散の高速化と液膜
の薄膜化が惹起され、塗布線速度は10000cm/時
のオーダーであると解釈された。尚、15℃、49℃及
び93℃における、水及びメタノールの、蒸気圧及び表
面張力を表1及び表2に示した。
[Examples 1 to 3] In Examples 1 to 3, the influence of the temperature during the formation of the liquid film was considered. Aqueous dispersion of silica particles (number average particle size 4 supplied by Nippon Shokubai Co., Ltd.)
(30 nm ± 3%), water and methanol were added so that the particle concentration was 5% by weight and the weight ratio of water to methanol was 1: 1 to prepare a fine particle dispersion. 50 minutes after the preparation, this fine particle dispersion (0.9 mL) was poured into a Petri dish (3 cm inside diameter) on a hot stirrer, and washed with a 30% chromic acid mixed acid for at least one day to prepare a silicon wafer substrate (1c).
mx 4 cm) at a 30 ° angle. The liquid temperature was changed to 15 ° C. (Example 1), 49 ° C. (Example 2), and 93 ° C. (Example 3) by adjusting the temperature of the hot stirrer. In each case, 10 seconds after the start of immersion. The substrate was picked up with tweezers, pulled up, and dried in an air atmosphere (temperature: 15 ° C., humidity: 44%) while maintaining the same angle as that at the time of immersion, to obtain a fine particle array structure on the silicon wafer substrate. The three photographs shown in FIG. 1 show, by SEM, a region in which the coating ratio of particles is relatively low in each of the arrangement structures obtained in these three examples in which the liquid temperature was changed. As the liquid temperature increases, 2
The area of the region forming the dimensional array increases, and the liquid temperature 9 of the third embodiment increases.
At 3 ° C., a densely packed thin film of a monolayer (Monolayer) and a bipartite layer (Bilayer) was formed with an area of approximately 5 mm 2 . This was interpreted as that the coating linear velocity was on the order of 10,000 cm / hour, because the evaporation rate increased due to the temperature rise, and the accompanying increase in the speed of diffusion of fine particles and the thinning of the liquid film were caused. Tables 1 and 2 show the vapor pressure and surface tension of water and methanol at 15 ° C., 49 ° C., and 93 ° C.

【0035】[0035]

【表1】 [Table 1]

【0036】[0036]

【表2】 [Table 2]

【0037】[実施例4〜5]実施例4〜5は、基板の
引き抜き角度の影響を考察したものである。実施例1の
塗布条件(液温15℃)において、基板の浸漬角度と乾
燥角度を一致させ(以下単に「基板角度」と呼ぶ)、基
板角度を15°(実施例4),30°(前記実施例
1),及び90°(実施例5)として同様の塗布実験を
行なった。基板角度を変化させた際、得られた各配列構
造において比較的規則性の高いMonolayer領域
をSEMで観察した結果を図2の3枚の写真に示した。
基板角度が小さくなるにしたがって、1個のドメイン
(欠陥のない連続した規則構造のみで形成された領域単
位;以下同様)の面積が大きく、規則性の高いMono
layerが形成された。これは基板の引き抜き角度が
小さくなることで粒子の拡散に対する重力の影響が小さ
くなり、粒子どうしが互いに密に充填しあう力(パッキ
ングの圧力)が大きく表れたことによるものと解釈され
た。
[Embodiments 4 and 5] Embodiments 4 and 5 consider the influence of the substrate pull-out angle. Under the application conditions of Example 1 (liquid temperature of 15 ° C.), the immersion angle and the drying angle of the substrate were matched (hereinafter simply referred to as “substrate angle”), and the substrate angle was set to 15 ° (Example 4) and 30 ° (described above). Example 1) and 90 ° (Example 5) were subjected to the same coating experiment. When the angle of the substrate was changed, the result of observing the monolayer region having relatively high regularity in each obtained array structure by SEM is shown in three photographs of FIG.
As the substrate angle becomes smaller, the area of one domain (region unit formed only by a continuous regular structure without defects; the same applies hereinafter) increases, and the mono is highly regular.
A layer was formed. This was interpreted as that the influence of gravity on the diffusion of the particles was reduced by reducing the angle of pulling out the substrate, and that the force (packing pressure) for the particles to closely pack each other was large.

【0038】[実施例6〜9]実施例6〜9は、微粒子
分散液のpHの影響を考察したものである。実施例1の
塗布条件において、加える水の一部を0.01規定濃度
の希塩酸または0.1規定濃度の水酸化ナトリウム水溶
液に置き換えて粒子分散液のpHを変化させた。即ち、
pH=4(実施例6)、pH=8(実施例7)、pH=
9(実施例8)、及びpH=12(実施例9)の3種を
調製した。実施例6〜9の操作は、気温及び液温は15
℃、湿度35%のもとで行ない、他の条件は実施例1と
同一とし、得られた各配列構造において比較的規則性の
高いMonolayer領域をSEMで観察したものが
図3に示す4枚の写真である。実施例6〜8の写真が示
すように、pH=9まではpHが高くなるにしたがって
1個のドメインの面積が大きくなり粒子配列の規則性が
高まるが、pH=12まで高くすると逆に規則性は低く
なった。これは、pHの上昇により粒子表面の帯電量が
増大し粒子間斥力が強まる(下記参考例1を参照)の
で、pH=9程度までは適度な粒子間斥力により粒子の
再配列が促進されて規則性の高い粒子配列構造におさま
りやすくなったが、斥力が強くなりすぎると(pH=1
2)規則性の高い粒子配列構造を形成する力が弱くなり
すぎたものと解釈された。
[Examples 6 to 9] In Examples 6 to 9, the influence of the pH of the fine particle dispersion was considered. Under the application conditions of Example 1, the pH of the particle dispersion was changed by replacing a part of the added water with 0.01 N dilute hydrochloric acid or 0.1 N sodium hydroxide aqueous solution. That is,
pH = 4 (Example 6), pH = 8 (Example 7), pH =
9 (Example 8) and pH = 12 (Example 9) were prepared. The operations of Examples 6 to 9 were performed under the condition that the air temperature and the liquid temperature were 15
3 ° C. and a humidity of 35%, and the other conditions were the same as in Example 1. In each of the obtained array structures, a monolayer region having relatively high regularity was observed by SEM. It is a photograph of. As shown in the photographs of Examples 6 to 8, the area of one domain increases and the regularity of the particle arrangement increases as the pH increases up to pH = 9 until pH = 9. Gender has decreased. This is because, as the pH rises, the amount of charge on the particle surface increases and the repulsion between the particles increases (see Reference Example 1 below), so that the rearrangement of the particles is promoted by an appropriate repulsion between the particles up to about pH = 9. It became easy to fit into a highly ordered particle array structure, but if the repulsion was too strong (pH = 1
2) It was interpreted that the ability to form a highly ordered particle array structure was too weak.

【0039】[参考例1]本参考例はpHが異なる条件
での各シリカ粒子のゼータ電位を考察したものである。
前記の実施例で用いたシリカ粒子を水とメタノールで
希釈し、粒子濃度0.002重量%、水とメタノールの
重量比が1:5となるようにした。また前記の実施例6
〜9で用いた方法により、液のpHを4,8,10,及
び12と変化させた。これらの粒子分散液について、前
記の電気泳動光散乱光度計により分散している各シリカ
粒子のゼータ電位測定を行った。溶媒の物性値は、化学
便覧(丸善)の水とメタノール混合液の物性値を線形近
似したものを用いた。即ち比誘電率38.73(メタノ
ール83.3重量%、25℃)、屈折率1.3371
(メタノール83.3重量%、18℃)、粘性率0.9
314(メタノール83.3重量%、25℃)の値を用
いた。なお、屈折率のみ温度が異なるのは便覧上に18
℃における値のみが記載されていたからである。測定は
循環水により25℃に保って行なった。また、値が安定
するのに時間を要したため、調製後50分後以降のデー
タの平均をとった。pHが異なる条件でのシリカ粒子の
各ゼータ電位を図4に示す。pHが高くなるにしたがい
ゼータ電位の絶対値は増加した。即ち静電ポテンシャル
による粒子間斥力が強まっていることがわかった。これ
は水素イオンによる遮蔽の効果が弱まったためと解釈さ
れた。
Reference Example 1 In this reference example, the zeta potential of each silica particle under different pH conditions was considered.
The silica particles used in the above example were diluted with water and methanol so that the particle concentration was 0.002% by weight and the weight ratio of water to methanol was 1: 5. Example 6
The pH of the solution was changed to 4, 8, 10, and 12 by the method used in 〜9. For these particle dispersions, the zeta potential of each of the dispersed silica particles was measured by the electrophoretic light scattering photometer described above. As the physical property values of the solvent, those obtained by linearly approximating the physical property values of a mixed solution of water and methanol described in Chemical Handbook (Maruzen) were used. That is, the relative dielectric constant is 38.73 (83.3% by weight of methanol at 25 ° C.) and the refractive index is 1.3371.
(83.3% by weight of methanol, 18 ° C.), viscosity: 0.9
A value of 314 (83.3% by weight of methanol, 25 ° C.) was used. Note that the temperature difference only in the refractive index is 18
This is because only the value at ° C was described. The measurement was carried out at 25 ° C. with circulating water. Further, since it took time for the value to stabilize, an average of data after 50 minutes after preparation was taken. FIG. 4 shows each zeta potential of the silica particles under different pH conditions. As the pH increased, the absolute value of the zeta potential increased. That is, it was found that the interparticle repulsion due to the electrostatic potential was increased. This was interpreted as a weakening of the shielding effect by hydrogen ions.

【0040】[実施例10]前記の実施例4の条件にお
いて基板を連続的に一定速度で引き上げ続けることによ
り、実施例4同様の規則性の高い粒子配列構造を有する
塗布膜を連続製造できた。
Example 10 By continuously pulling up the substrate at a constant speed under the conditions of Example 4 described above, it was possible to continuously produce a coating film having a highly ordered particle arrangement structure similar to Example 4. .

【0041】[0041]

【発明の効果】本発明の微粒子薄膜の製造方法により、
微粒子を基板上に六方晶格子状又は正方晶格子状に規則
的に配列することが極めて高速に行われる。かかる微粒
子薄膜はフォトクロミック結晶材料として光導波路デバ
イスなど光学用途に有用である。
According to the method for producing a fine particle thin film of the present invention,
The fine particles are regularly arranged on the substrate in a hexagonal lattice or a tetragonal lattice at an extremely high speed. Such a fine particle thin film is useful as a photochromic crystal material for optical applications such as an optical waveguide device.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施例1〜3で得られた微粒子配列構造をSE
Mで観察した写真である。
FIG. 1 shows the microparticle array structure obtained in Examples 1 to 3
It is the photograph observed by M.

【図2】実施例4、1及び5で得られた微粒子配列構造
において比較的規則性の高いMonolayer領域を
SEMで観察した写真である。
FIG. 2 is a photograph obtained by observing a monolayer region having relatively high regularity in a fine particle array structure obtained in Examples 4, 1 and 5 by SEM.

【図3】実施例6〜9で得られた微粒子配列構造におい
て比較的規則性の高いMonolayer領域をSEM
で観察した写真である。
FIG. 3 shows that the monolayer region having relatively high regularity in the fine particle array structure obtained in Examples 6 to 9 was identified by SEM.
It is a photograph observed in.

【図4】参考例1において、pHが異なる条件での各シ
リカ粒子のゼータ電位をプロットしたグラフである。
FIG. 4 is a graph in which the zeta potential of each silica particle is plotted under different pH conditions in Reference Example 1.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) G02B 6/12 G02B 6/12 N Z (72)発明者 加和 学 神奈川県横浜市青葉区鴨志田町1000番地 三菱化学株式会社横浜総合研究所内 Fターム(参考) 2H047 KA03 LA18 PA06 TA41 4D075 AB03 AB35 AB56 BB22X BB24Z BB93X CA47 CB01 DA03 DA06 DB01 DB13 DB14 DB18 DB21 DB31 DC24 EA06 EA10 EB01 EB05 EB13 EB14 EB22 EB35 EB37 EB39 EB44 EB51 EB57 EC30 EC51 4G072 AA25 BB05 BB09 BB10 DD04 DD05 DD06 EE01 EE06 EE07 GG03 HH14 LL06 LL11 LL13 LL14 LL15 MM21 MM31 NN21 TT01 UU30 4G075 AA24 BB02 BB08 CA02 FB01──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G02B 6/12 G02B 6/12 NZ (72) Inventor Manabu Kawa 1000 Kamoshida-cho, Aoba-ku, Yokohama-shi, Kanagawa-ken Address Mitsubishi Chemical Corporation Yokohama Research Laboratory F-term (reference) 2H047 KA03 LA18 PA06 TA41 4D075 AB03 AB35 AB56 BB22X BB24Z BB93X CA47 CB01 DA03 DA06 DB01 DB13 DB14 DB18 DB21 DB31 DC24 EA06 EA10 EB01 EB05 EB13 EB37 EB37 EC30 EC51 4G072 AA25 BB05 BB09 BB10 DD04 DD05 DD06 EE01 EE06 EE07 GG03 HH14 LL06 LL11 LL13 LL14 LL15 MM21 MM31 NN21 TT01 UU30 4G075 AA24 BB02 BB08 CA02 FB01

Claims (14)

【特許請求の範囲】[Claims] 【請求項1】蒸気圧及び表面張力を異にする2種以上の
液体を含有し、かつ均一組成を有する液体混合物から成
る媒質中に、凝集相微粒子を分散し、該微粒子分散液を
基板表面上に流延して液膜を形成させ、該液膜から前記
媒質の一部を気化除去することにより、該微粒子を該基
板表面に単層もしくは複数層に展開することを特徴とす
る微粒子薄膜の製造方法。
An agglomerate phase fine particle is dispersed in a medium comprising a liquid mixture containing two or more liquids having different vapor pressures and surface tensions and having a uniform composition. A fine particle thin film, wherein the fine particles are spread on the surface of the substrate in a single layer or a plurality of layers by forming a liquid film by casting on the liquid film and vaporizing and removing a part of the medium from the liquid film. Manufacturing method.
【請求項2】凝集相微粒子の数平均粒径が0.001〜
10μmである請求項1記載の微粒子薄膜の製造方法。
2. The method according to claim 1, wherein the number average particle diameter of the aggregated phase fine particles is 0.001 to 0.001.
The method for producing a fine particle thin film according to claim 1, wherein the thickness is 10 µm.
【請求項3】液膜形成温度における媒質液体の蒸気圧の
比が1.5〜20である請求項1又は2記載の微粒子薄
膜の製造方法。
3. The method according to claim 1, wherein the ratio of the vapor pressure of the medium liquid at the liquid film forming temperature is 1.5 to 20.
【請求項4】液膜形成温度における媒質液体の表面張力
の比が1.5〜20である請求項1〜3いずれか1項記
載の微粒子薄膜の製造方法。
4. The method according to claim 1, wherein the ratio of the surface tension of the medium liquid at the liquid film forming temperature is 1.5 to 20.
【請求項5】蒸気圧の大きい媒質液体の表面張力が、蒸
気圧の小さい媒質液体の表面張力より小さいことを特徴
とする請求項1〜4いずれか1項記載の微粒子薄膜の製
造方法。
5. The method for producing a fine particle thin film according to claim 1, wherein the surface tension of the medium liquid having a high vapor pressure is smaller than the surface tension of the medium liquid having a low vapor pressure.
【請求項6】液膜形成温度が−30〜150℃である請
求項1〜5いずれか1項記載の微粒子薄膜の製造方法。
6. The method for producing a fine particle thin film according to claim 1, wherein the liquid film forming temperature is -30 to 150 ° C.
【請求項7】媒質液体が水と極性有機溶媒の混合物であ
る請求項1〜6いずれか1項記載の微粒子薄膜の製造方
法。
7. The method for producing a fine particle thin film according to claim 1, wherein the medium liquid is a mixture of water and a polar organic solvent.
【請求項8】極性有機溶媒がアルコール類、エーテル類
または含窒素有機溶媒である請求項1〜7いずれか1項
記載の微粒子薄膜の製造方法。
8. The method for producing a fine particle thin film according to claim 1, wherein the polar organic solvent is an alcohol, an ether or a nitrogen-containing organic solvent.
【請求項9】基板の引き抜き角度が5〜150°である
請求項1〜8いずれか1項記載の微粒子薄膜の製造方
法。
9. The method for producing a fine particle thin film according to claim 1, wherein the substrate has a drawing angle of 5 to 150 °.
【請求項10】微粒子分散液において測定される微粒子
表面のゼータ電位が−20〜−85ミリボルトである請
求項1〜9いずれか1項記載の微粒子薄膜の製造方法。
10. The method for producing a fine particle thin film according to claim 1, wherein the zeta potential of the surface of the fine particles measured in the fine particle dispersion is -20 to -85 mV.
【請求項11】凝集相微粒子が微粒シリカである請求項
1〜10いずれか1項記載の微粒子薄膜の製造方法。
11. The method for producing a fine particle thin film according to claim 1, wherein the aggregate phase fine particles are fine silica.
【請求項12】基板上に凝集相微粒子が六方晶格子状又
は正方晶格子状に配列していることを特徴とする請求項
1〜11いずれか1項記載の微粒子薄膜の製造方法。
12. The method according to claim 1, wherein the aggregated phase fine particles are arranged in a hexagonal lattice or a tetragonal lattice on the substrate.
【請求項13】凝集相微粒子の粒径の標準偏差が数平均
粒径の10%以下である請求項1〜12いずれか1項記
載の微粒子薄膜の製造方法。
13. The method for producing a fine particle thin film according to claim 1, wherein the standard deviation of the particle diameter of the aggregated phase fine particles is 10% or less of the number average particle diameter.
【請求項14】請求項1〜13の方法により、基板上に
凝集相微粒子が六方晶格子状又は正方晶格子状に配列形
成してなる微粒子薄膜。
14. A fine particle thin film comprising aggregated phase fine particles arranged in a hexagonal lattice or a tetragonal lattice on a substrate by the method according to claim 1.
JP2001086827A 2001-03-26 2001-03-26 Method for producing fine particle thin film Pending JP2002286962A (en)

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JP2005161175A (en) * 2003-12-02 2005-06-23 Ube Nitto Kasei Co Ltd Manufacturing method of fine particle arrangement substrate and fine particle arrangement substrate obtained by the method
JP2006075738A (en) * 2004-09-09 2006-03-23 Seishin Enterprise Co Ltd Thin film coating method for micro member
JP2006224231A (en) * 2005-02-16 2006-08-31 National Institute For Materials Science Fabrication of single layer array structure of surface unmodified metal nanoparticles
WO2006095845A1 (en) * 2005-03-10 2006-09-14 Japan Science And Technology Agency Regularly arranged nanoparticulate silica and process for producing the same
JP2009092686A (en) * 2007-10-03 2009-04-30 Toshiba Corp Near-field optical waveguide manufacturing method and near-field optical waveguide
JP2013521111A (en) * 2010-03-02 2013-06-10 コミサリア ア レネルジ アトミク エ オ ゼネルジ アルテルナティヴ Method for depositing a layer of organized particles on a substrate
JP2016186608A (en) * 2015-03-27 2016-10-27 東洋インキScホールディングス株式会社 Production method of colored film exhibiting structural color

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005161175A (en) * 2003-12-02 2005-06-23 Ube Nitto Kasei Co Ltd Manufacturing method of fine particle arrangement substrate and fine particle arrangement substrate obtained by the method
JP2006075738A (en) * 2004-09-09 2006-03-23 Seishin Enterprise Co Ltd Thin film coating method for micro member
JP2006224231A (en) * 2005-02-16 2006-08-31 National Institute For Materials Science Fabrication of single layer array structure of surface unmodified metal nanoparticles
WO2006095845A1 (en) * 2005-03-10 2006-09-14 Japan Science And Technology Agency Regularly arranged nanoparticulate silica and process for producing the same
JP2006248845A (en) * 2005-03-10 2006-09-21 Japan Science & Technology Agency Regularly arranged nanoparticulate silica and method for producing the same
US8173092B2 (en) 2005-03-10 2012-05-08 Japan Science And Technology Agency Regularly arranged nanoparticulate silica and process for producing the same
JP2009092686A (en) * 2007-10-03 2009-04-30 Toshiba Corp Near-field optical waveguide manufacturing method and near-field optical waveguide
JP2013521111A (en) * 2010-03-02 2013-06-10 コミサリア ア レネルジ アトミク エ オ ゼネルジ アルテルナティヴ Method for depositing a layer of organized particles on a substrate
JP2016186608A (en) * 2015-03-27 2016-10-27 東洋インキScホールディングス株式会社 Production method of colored film exhibiting structural color

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