JP2002280292A - Substrate processing method and development processing method - Google Patents

Abstract

(57) [Problem] To provide a substrate processing method capable of obtaining a high-quality substrate by suppressing generation of stain marks on the substrate. A substrate processing method according to the present invention includes a first step (step 10) of supplying a predetermined processing liquid to a substrate G held substantially horizontally, and a step in which the predetermined processing liquid is formed on the surface of the substrate G in a film form. A second step (step 13) of rotating the substrate G at a predetermined number of revolutions for a predetermined time so as to remain, and a heat treatment of the substrate G to evaporate a film-like processing solution remaining on the surface of the substrate G to evaporate the substrate. And a third step (Step 15) of drying. Even in the case where the mist of the processing liquid adheres to the substrate G in the second step, the mist diffuses into the film of the processing liquid remaining on the surface of the substrate G, so that generation of stain marks on the substrate G is suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to, for example, supplying a predetermined processing liquid to a glass substrate for a liquid crystal display (LCD) or a substrate such as a semiconductor wafer to perform a liquid processing, and then performing a predetermined drying processing after the liquid processing. The present invention relates to a substrate processing method and a developing method of a substrate on which a resist film is formed and subjected to an exposure process.

[0002]

2. Description of the Related Art In a photolithography process for a liquid crystal display (LCD) or a semiconductor device, a photoresist liquid is applied to a substrate such as an LCD substrate or a semiconductor wafer which has been subjected to a cleaning treatment, and a resist film is formed. A series of processes of exposing the resist film and developing it is performed. The cleaning, resist coating, and developing processes are performed by using a liquid processing apparatus generally called a spinner type while holding the substrate horizontally and keeping it stationary, or while rotating the substrate in a plane, Is supplied to the substrate surface.

For example, in the development process of an LCD substrate, first, the exposed substrate is placed on a spin chuck or the like, fixed, a developing solution is added to the substrate to form a developing solution paddle, and a developing solution paddle is formed. Allow the reaction to proceed. Next, when the supply of the rinsing liquid is started, the substrate is rotated almost at the same time to shake off the developing liquid, and a sufficient rinsing liquid is supplied to the surface of the substrate to remove a residue of the developing liquid, and then the supply of the rinsing liquid is stopped. Then, the substrate is rotated at a high speed to shake off the rinsing liquid, and spin drying is performed so that the substrate surface is dried.
The spin-dried substrate is transferred to a heat treatment unit and subjected to a post-baking process.

[0004]

However, when the development process is performed in accordance with the above-described process, traces such as stains (hereinafter referred to as "stain traces") are generated on the substrate surface after the post-baking process. In addition, there is a problem that the substrate quality is deteriorated.
In addition, residues may be generated on the outer peripheral portion of the substrate, resulting in deterioration of the substrate quality. Further, there is a problem that a part of the resist film formed on the substrate surface is peeled off, and the yield is reduced.

The present invention has been made in view of the above-mentioned problems of the prior art, and suppresses the occurrence of stain marks on a substrate after performing a series of liquid treatments and a drying treatment after the liquid treatments. It is an object of the present invention to provide a method of processing a substrate. Another object of the present invention is to provide a substrate processing method for suppressing generation of a residue of a processing liquid. Further, in a developing process performed on the substrate on which the resist film has been formed and exposed to light, it is possible to prevent occurrence of a stain mark on the substrate,
It is another object of the present invention to provide a developing method that also suppresses generation of a developer residue. Still another object of the present invention is to provide a developing method in which peeling of a resist film is suppressed.

[0006]

According to the present invention, there is provided, as a first invention, a substrate processing method for performing a series of liquid treatments on a substrate and a drying treatment after the liquid treatment. A first step of supplying a predetermined processing liquid to the substrate held substantially horizontally, and a second step of rotating the substrate at a predetermined rotation speed for a predetermined time so that the predetermined processing liquid remains in a film form on the substrate surface And a third step of drying the substrate by heat-treating the substrate to evaporate a film-form treatment liquid remaining on the surface of the substrate.

According to a second aspect of the present invention, there is provided a substrate processing method for performing a series of liquid processing on a substrate and a drying processing after the liquid processing, wherein a first processing liquid is applied to a substrate held substantially horizontally. One step, a second step of applying a second processing liquid to the substrate on which the first processing liquid is applied, and removing the first processing liquid from the substrate, and a step of coating the second processing liquid on the surface of the substrate. A third step of rotating the substrate at a predetermined number of revolutions for a predetermined time so as to remain in a shape, and a fourth step of drying the substrate by heat-treating the substrate in which the second processing liquid remains in a film shape. And a substrate processing method characterized by the following.

According to a third aspect of the present invention, there is provided a method for developing a substrate on which a resist film is formed and which has been subjected to an exposure process, wherein a first step of applying a developing solution to the substrate and developing the substrate is provided. A second step of applying a rinsing liquid to the substrate to which the rinsing liquid is applied and removing the developing liquid from the substrate, and a third step of rotating the substrate to which the rinsing liquid is applied so that the rinsing liquid remains in a film form on the substrate surface And a fourth step of drying the substrate by heat-treating the substrate in which the rinsing liquid remains in the form of a film, and a developing method.

According to a fourth aspect of the present invention, there is provided a rotatable spin chuck for holding a substrate substantially horizontally, an inner cup provided so as to be movable up and down so as to surround a periphery of the substrate held by the spin chuck, An outer cup provided so as to be able to ascend and descend so as to surround the inner cup, a resist film is formed using a developing apparatus, and a developing method of performing a developing process on the exposed substrate. A first step of applying a developing solution to the substrate and developing the substrate in a state where an inner cup is arranged on a peripheral edge of the substrate held by the spin chuck; and rotating the spin chuck at a predetermined rotation speed. A second step of supplying a rinsing liquid to the substrate on which the developing liquid is applied and flowing out the developing liquid from the substrate, and positioning an outer cup at a peripheral edge of the substrate and rotating the spin chuck by a predetermined rotation. A third step of supplying a rinsing liquid to the substrate while rotating the substrate to remove a residue of the developing solution, and positioning an inner cup on the periphery of the substrate, and rotating the spin chuck at a predetermined number of rotations onto the substrate. A fourth step of supplying the rinse liquid and cleaning the inner wall of the inner cup with the rinse liquid shaken off from the substrate; and stopping the supply of the rinse liquid to the substrate and spinning so that the rinse liquid remains on the substrate surface in a film form. A developing method comprising: a fifth step of rotating the chuck; and a sixth step of heat-treating the substrate with the rinse liquid remaining in a film form and drying the substrate.

According to a fifth aspect of the present invention, there is provided a method of developing a substrate on which a resist film is formed and which has been subjected to an exposure process, wherein a first step of applying a developing solution to the substrate and performing development is performed, A second step of applying a rinsing liquid to the substrate coated with and removing the developing solution from the substrate, and rotating the substrate at a low speed so that the resist film formed on the substrate is not partially peeled off;
Alternatively, a third method in which the rotation processing time is shortened to rotate the substrate.
And a developing method comprising the steps of:

According to the first aspect of the present invention, even if the processing liquid shaken off from the substrate becomes mist and adheres again to the substrate on which the processing liquid remains in the form of a film, for example, the film-like processing liquid is removed. Since they are integrated and then heat-treated, it is possible to prevent the occurrence of stain marks on the substrate due to the attached mist. According to the second aspect of the invention, it is possible to prevent the occurrence of stain marks on the substrate as in the case of the first aspect of the invention, and the mist of the first processing liquid shakes off the second processing liquid from the substrate. The first processing liquid diffuses into the film-formed second processing liquid even if it is attached again to the substrate after
Generation of stain marks and particles due to the first processing liquid,
It is possible to reduce the generation of residues of the first processing solution,
Thus, the quality of the substrate is kept high.

According to the third aspect of the invention, the generation of the developer residue can be suppressed, and even when the developer or the rinse solution shaken off from the substrate is turned into a mist and re-adhered, the mist adhered to the mist can be prevented. The occurrence of stain marks can be prevented. According to the fourth aspect of the present invention, generation of developer residue can be suppressed, and by controlling the state of the cup in processing using the developer and the rinsing solution, generation of mist of the developer and the rinsing solution can be prevented. Is suppressed. Further, by performing the heat treatment from the state where the rinsing liquid remains in the form of a film on the surface of the substrate, the occurrence of stain marks due to the mist of the developing liquid and the rinsing liquid is suppressed.

According to the fifth aspect of the invention, partial peeling of the resist is prevented, and at the same time, the developer residue is reduced, so that the quality of the substrate can be maintained at a high level.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the substrate processing method and the developing method of the present invention will be described below using a resist coating / developing processing system for cleaning, resist coating, and developing an LCD substrate. As an example,
This will be described in detail with reference to the accompanying drawings. FIG. 1 shows LC
1 is a plan view showing a resist application / development processing system 100 for a D substrate.

Resist coating / developing processing system 100
Is a cassette C containing a plurality of LCD substrates (substrates) G
A substrate station is mounted between a cassette station 1 on which a substrate G is placed, a processing unit 2 having a plurality of processing units for performing a series of processing including resist coating and development on the substrate G, and an exposure apparatus (not shown). And an interface unit 3 for performing transfer of a cassette station 1 and an interface unit 3 at both ends of the processing unit 2.

The cassette station 1 has a transport mechanism 1 for transporting the substrate G between the cassette C and the processing section 2.
0 is provided. Then, the cassette C is loaded and unloaded at the cassette station 1. Also, the transport mechanism 1
0 is a transport path 10 provided along the cassette arrangement direction.
A transfer arm 11 is provided which is movable on the substrate a. The transfer arm 11 transfers the substrate G between the cassette C and the processing unit 2.

The processing section 2 is divided into a front section 2a, a middle section 2b, and a rear section 2c.
13 and 14, and each processing unit is disposed on both sides of these transport paths. And between these, the relay unit 1
5 and 16 are provided.

The front section 2a is provided with a main transfer device 17 movable along the transfer path 12. On one side of the transfer path 12, two cleaning processing units (SCR) 21a
b, and a processing block 25 in which an ultraviolet irradiation unit (UV) and a cooling unit (COL) are stacked in two stages, and a heating processing unit (H
A processing block 26 in which P) is stacked in two stages and a processing block 27 in which cooling units (COL) are stacked in two stages are arranged.

The middle section 2b includes a main transfer device 18 movable along the transfer path 13. On one side of the transfer path 13, a resist coating unit (CT) 22 and a peripheral portion of the substrate G are provided. A peripheral resist removal unit (ER) 23 for removing the resist of the portion is provided integrally,
On the other side of the transport path 13, a processing block 28 in which a heat processing unit (HP) is stacked in two stages, a processing block 29 in which a heating processing unit (HP) and a cooling processing unit (COL) are vertically stacked. , And a processing block 30 in which an adhesion processing unit (AD) and a cooling unit (COL) are vertically stacked.

Further, the rear section 2c is provided with a main transport device 19 movable along the transport path 14,
Is provided with three development processing units (DEV) 24a
24b and 24c are arranged, and on the other side of the transport path 14, a processing block 31 in which a heating processing unit (HP) is stacked in two stages, and both a heating processing unit (HP) and a cooling processing unit (COL) ) Are disposed on top of each other.

The processing unit 2 includes a cleaning unit (SCR) 21a, a resist coating unit (CT) 22, and a developing unit (DE) on one side of the transport path.
V) Only the spinner type unit such as 24a is arranged, and only the thermal type processing unit such as the heat processing unit (HP) or the cooling processing unit (COL) is arranged on the other side.

A chemical solution supply unit 34 is disposed at a portion of the relay units 15 and 16 on the side where the spinner system unit is disposed, and a space 35 for performing maintenance of the main transport units 17, 18 and 19 is provided. Have been.

Each of the main transporting devices 17, 18, and 19 has an X-axis driving mechanism, a Y-axis driving mechanism, and a vertical Z-axis driving mechanism in two directions in a horizontal plane, and further rotates about the Z axis. , And each has an arm for supporting the substrate G.

The main transfer device 17 has a transfer arm 17a, transfers the substrate G to and from the transfer arm 11 of the transfer mechanism 10, and loads and unloads the substrate G to and from each processing unit in the former stage 2a. Has a function of transferring the substrate G to and from the relay unit 15. Further, the main transfer device 18 has a transfer arm 18a, transfers the substrate G to and from the relay unit 15, and loads and unloads the substrate G to and from each processing unit in the middle unit 2b. And a function of transferring the substrate G during the transfer. Further, the main transfer device 19 has a transfer arm 19a, transfers the substrate G to and from the relay unit 16, loads and unloads the substrate G to and from the respective processing units in the rear-stage unit 2c, and further connects to the interface unit 3. And a function of transferring the substrate G during the transfer. The relay unit 1
5 and 16 also function as cooling plates.

The interface unit 3 includes an extension 36 for temporarily holding the substrate G when transferring the substrate G to and from the processing unit 2, and two buffers provided on both sides thereof for disposing a buffer cassette. A stage 37 and a transport mechanism 38 for loading and unloading the substrate G between the stage 37 and an exposure apparatus (not shown) are provided. The transport mechanism 38 includes a transport arm 39 that can move on a transport path 38 a provided along the direction in which the extension 36 and the buffer stage 37 are arranged. The transport arm 39 allows the substrate G to be moved between the processing unit 2 and the exposure apparatus. Is carried out.

By integrating and integrating the processing units in this manner, space can be saved and processing efficiency can be improved.

In the resist coating / developing processing system 100 configured as described above, the substrate G in the cassette C
Is transported to the processing unit 2, where the first stage 2 a
The surface modification / cleaning process is performed by the ultraviolet irradiation unit (UV) of the processing block 25, and the cooling unit (CO
L), the cooling unit (SCR) 21
a. The scrubber cleaning is performed at 21b, and the processing block 26
Is heated and dried in any one of the heat treatment units (HP), and then any one of the cooling units (C
OL).

Thereafter, the substrate G is transported to the middle section 2b,
In order to enhance the fixability of the resist, the upper adhesion processing unit (AD) of the processing block 30 is subjected to hydrophobizing treatment (HMDS treatment) and cooled by the lower cooling processing unit (COL).
A resist is applied in T) 22, and an extra resist on the periphery of the substrate G is removed in a peripheral resist removal unit (ER) 23. Thereafter, the substrate G is pre-baked in one of the heat processing units (HP) in the middle section 2b, and the lower cooling unit (CO) in the processing block 29 or 30 is processed.
L).

Thereafter, the substrate G is transported from the relay section 16 to the exposure apparatus via the interface section 3 by the main transport apparatus 19, where a predetermined pattern is exposed. And
The substrate G is carried in again via the interface unit 3,
If necessary, the processing blocks 31, 32, 3 of the subsequent stage 2c
After the post-exposure bake processing is performed in any one of the heat processing units (HP), the development processing is performed in any of the development processing units (DEV) 24a, 24b, and 24c to form a predetermined circuit pattern. The developed substrate G is subjected to post-baking in one of the heat treatment units (HP) in the subsequent stage 2c, and then cooled in one of the cooling units (COL). It is accommodated in a predetermined cassette on the cassette station 1 by the transfer mechanism 18 and 17.

Next, a development processing unit (DEV) 24a
To 24c will be described in detail. FIG. 2 is a plan view showing an embodiment of the development processing units (DEV) 24a to 24c, and FIG. 3 is a development processing unit (DEV) shown in FIG.
V) Sectional view of the cup portion at 24a to 24c. The development processing units (DEV) 24a to 24c are entirely surrounded by a sink 48, and a substrate G
Is mechanically held, for example, a spin chuck 41 is provided so as to be rotated by a rotation drive mechanism 42 such as a motor, and a cover 43 surrounding the rotation drive mechanism 42 is provided below the spin chuck 41. Is arranged. The spin chuck 41 can be moved up and down by a lifting mechanism (not shown).
The substrate G is transferred to and from a. Spin chuck 4
Reference numeral 1 indicates that the substrate G can be sucked and held by a vacuum suction force or the like.

Two undercups 44 and 45 are provided around the outer periphery of the cover 43 so as to be separated from each other. An upper portion between the two undercups 44 and 45 is mainly for flowing the developing solution downward. An inner cup 46 is provided so as to be able to move up and down, and an outer cup 47 for mainly flowing a rinsing liquid downward is provided outside the under cup 45 so as to be able to move up and down integrally with the inner cup 46.
In FIG. 3, the left side shows a position (upper position) where the inner cup 46 and the outer cup 47 are raised when the developer is discharged, and the right side (a lower position) where these are lowered when the rinsing liquid is discharged. Position) is shown.

The inner peripheral side of the under cup 44 (the cover 43
An exhaust duct 49 for exhausting the inside of the unit at the time of rotational drying is provided at the bottom of the outer periphery (under the outer periphery) of the unit, and a drain pipe for mainly discharging the developer is provided between the two under cups 44 and 45. A drain tube 50a is provided at the bottom on the outer peripheral side of the under cup 45 for mainly discharging the rinsing liquid.
b is provided. The drain pipe 50a is provided with a three-way switching valve 50c, so that a high-concentration developer can be collected and adjusted for density and then used again for development (collection route). The low-concentration developer is stored, for example, in a drain tank or the like, or is subjected to a purification treatment before being discharged (a disposal route).

On one side of the outer cup 47, FIG.
As shown in FIG. 2, a nozzle holding arm 51 for supplying a developing solution is provided. The nozzle holding arm 51 has a paddle forming arm which is an embodiment of a developing solution discharging nozzle used for applying the developing solution to the substrate G. A nozzle 80 is attached. As the paddle forming nozzle 80, for example, the whole is long in one direction and a plurality of developing solution discharge ports are formed in the length direction so as to be able to discharge the developing solution vertically in a strip shape, Developer outlet 80 having a slit shape in the vertical direction
The one in which a is formed can be used. A developer is supplied to the paddle forming nozzle 80 from a developer supply source (not shown) at a predetermined timing.

The nozzle holding arm 51 is connected to the guide rail 5
3 is configured to orbit across the substrate G by a drive mechanism 52 such as a belt drive along the line 3, so that the nozzle holding arm 51 discharges the developer from the paddle forming nozzle 80 while applying the developer. The stationary substrate G is scanned in the direction in which the guide rail 53 extends. The paddle forming nozzle 80 is arranged to wait in a nozzle standby unit 115, and the nozzle standby unit 115 is provided with a nozzle cleaning mechanism (nozzle bath) 120 for cleaning the paddle forming nozzle 80. .

On the other side of the outer cup 47, a rinse nozzle arm 54 for a rinse liquid such as pure water is provided.
A rinsing liquid discharge nozzle 60 is provided at the tip of the rinsing nozzle arm 54. Rinse nozzle arm 54
Is rotatably provided about a pivot 55 by a drive mechanism 56. Thus, when the rinsing liquid is discharged, the rinsing nozzle arm 54 is connected to the rinsing liquid discharging nozzle 6.
The substrate G is scanned while discharging the rinsing liquid from zero.

Although not shown in FIGS. 2 and 3, the development processing units (DEVs) 24a to 24c have a back rinse for removing and cleaning the developer adhering to the back surface of the substrate G held by the spin chuck 41. In order to perform the processing, a back rinse nozzle for discharging a rinse liquid toward the back surface of the substrate G is also provided.

The above-described development processing unit (DEV) 24
The development processing steps using a to 24c will be described with reference to the flowchart shown in FIG. First, with the inner cup 46 and the outer cup 47 held at the lower level (the right position in FIG. 3), the transfer arm 19a holding the substrate G is moved to the developing units (DEV) 24a to 24a-2.
4c, the spin chuck 41 is raised at this timing, and the substrate G is transferred to the spin chuck 41 (step 1).

The transfer arm 19a is connected to the developing unit (D
EV) Retreat outside the 24a to 24c, lower the spin chuck 41 on which the substrate G is placed, and hold it at a predetermined position (step 2). The driving mechanism 52 operates the nozzle holding arm 51 at the retreat position so that the paddle forming nozzle 80 does not contact the upper end of the outer cup 47, and moves and arranges the nozzle holding arm 51 to a predetermined position in the inner cup 46. (Step 3). The position where the paddle forming nozzle 80 is arranged in this manner is hereinafter referred to as a discharge start position.

The discharge start position may be set, for example, such that the position of the developing solution discharge port 80a of the paddle forming nozzle 80 is located slightly outside the substrate G, or is located above the outer ring of the substrate G. , Or a position at a predetermined distance from the outer ring of the substrate G, for example, about 1 cm to 3 cm, or the like. In this state, the exhaust duct 49 is not operated so that the developer paddle formed in step 4 of the next process is not affected by the airflow generated by operating the exhaust duct 49.

Next, the discharge of the predetermined developing solution from the paddle forming nozzle 80 at the discharge start position is started, and the paddle forming nozzle 80 is scanned on the substrate G along the guide rail 53 at a predetermined speed. Then, a developer paddle is formed (step 4). Here, when the discharge start position is, for example, about 2 cm inside the outer ring of the substrate G, the developer discharged from the developer discharge port 80 a of the paddle forming nozzle 80 causes the nozzle holding arm 51 to move. At the discharge start position, the developer is discharged and held for a predetermined time so as to spread to the outer ring of the substrate G which is the direction opposite to the direction to be scanned, and then the nozzle holding arm 51 starts scanning. .

When the developing paddle is formed, the inner cup 46 and the outer cup 47 are kept in the lower position. This is because the developing solution flowing down from the substrate G naturally flows along the cover 43 and is guided between the under cups 44 and 45 so as not to rotate the substrate G. In this way, the developer flowing down from the substrate G is discharged from the drain 50a formed at the bottom between the under cups 44 and 45, sent to the recovery route side through the three-way switching valve 50c, and is reused after the concentration is adjusted. .

With the developer paddle formed, a predetermined development processing time (development reaction time) is maintained, and the development reaction proceeds (step 5). During this time, the paddle forming nozzle 8
0 and the nozzle holding arm 51 are moved to the nozzle standby section 115 (step 6), while the drive mechanism 56 is driven to rotate the rinse nozzle arm 54 around the pivot 55 so that the rinse liquid discharge nozzle 60 is moved to the substrate G. (Step 7). Further, the spin chuck 41
The inner cup 46 and the outer cup 47 are raised to the upper position and held so that the developer shaken off from the substrate G when the is rotated hits the inner wall of the inner cup 46 (step 8). This upper position corresponds to the substrate G
The horizontal position on the surface of the inner cup 46 is approximately equal to the position of the tapered portion of the inner cup 46. Note that the paddle forming nozzle 80 is subjected to a cleaning process in the nozzle standby unit 115,
It is held at the standby position until the processing on the next substrate G.

Subsequently, when the predetermined development processing time has ended, the exhaust operation by the exhaust duct 49 is started (step 9). The low-speed rotation of the spin chuck 41 is started almost simultaneously with the start of step 9, and the discharge of the rinse liquid from the rinse liquid discharge nozzle 60 is started almost simultaneously with this operation (step 10). In this step 10, the back rinsing process also starts at the same time.

The mixed solution of the developer and the rinsing solution shaken off from the substrate G at the beginning of the step 10 is easy to regenerate because the concentration of the developer is not extremely reduced. After being discharged from, it is collected using a collection route. However, after a lapse of a predetermined time from the start of step 8, the concentration of the developing solution is reduced and the developer becomes unsuitable for reuse.
The three-way switching valve 50c is switched so that the mixed liquid discharged from Oa flows to the waste route.

The number of rotations of the spin chuck 41 in step 10 can be, for example, 10 to 100 rpm. Further, it is also possible to rotate the spin chuck 41 at a low speed of about 20 rpm at the beginning of step 10 and to increase the number of rotations to about 70 rpm while step 10 is in progress.

Next, the inner cup 46 and the outer cup 47 are lowered to and held at the lower position, and the rotation speed of the spin chuck 41 is increased from the rotation speed at the step 10 so that the substrate G The rinse solution having a reduced concentration of the developer is shaken off and directed downward by hitting the wall surface of the outer cup 47, collected through the drain 50b, and discarded (step 11). The rotation speed of the spin chuck 41 in step 11 is, for example, 100 to 200 r.
pm. The processing time in step 11 can be set to a time in which the developing solution is almost completely removed from the substrate G.

After the process of step 11 is completed, the inner cup 46 and the outer cup 47 are raised and held at the upper position, and almost simultaneously with this operation, the rotation speed of the spin chuck 41 is reduced while the rinsing liquid is discharged. Lower (step 12). The rinsing liquid shaken off from the substrate G is guided downward on the wall surface of the inner cup 46, discharged from the drain 50a, and further collected and disposed through a disposal route.

Before this step 12, the developing solution shaken off from the substrate G in step 10 adheres to the wall surface of the inner cup 46.
The rinse liquid shaken off from the substrate G by 2 contains almost no developer. Thus, in step 12, not only the removal of the developing solution from the substrate G, but also the cleaning process of the inner cup 46 by the rinse liquid shaken off from the substrate G is performed. Thus, step 12
By performing the cleaning process on the inner cup 46, it is possible to prevent the generation of particles and the like due to the drying of the developer attached to the inner cup 46, and to provide a clean atmosphere to another substrate G to be processed next. Can be started.

In step 12, the spin chuck 4
One purpose of reducing the number of rotations of one is that when the inner cup 46 and the outer cup 47 are held at the raised position, the distance from the peripheral edge of the substrate G to the wall surface of the cup becomes shorter, If the rotation speed is left high, the amount of mist generated by the rinsing liquid shaken off from the substrate G colliding with the wall surface of the inner cup 46 may be increased. Spin chuck 4 in step 12
The number of rotations of 1 may be, for example, 50 to 100 rpm.

The inner cup 46 and the outer cup 47
And the rinsing liquid discharge nozzle 60
Of the rinsing liquid from the spin chuck 41 is stopped.
The number of rotations is increased, and the rinsing liquid is shaken off from the substrate G (step 13). In this step 13, processing conditions are determined so that the following two problems can be solved individually, preferably simultaneously.

The first problem is that, after the heat treatment of the substrate G, traces such as stains (stain marks) are scattered on the substrate G, which deteriorates the quality of the substrate.
The stain marks on the substrate G are generated when mist such as a rinsing liquid adheres to the surface of the dried substrate G because the substrate G was completely dried in Step 13 in the past. It was speculated. Therefore,
To solve this problem, in step 13,
The rotation speed and the rotation time of the spin chuck 41 are set so that a thin film of the rinsing liquid remains on the substrate G so that the surface of the substrate G is not completely dried.

In step 13, the rinse liquid is shaken to such an extent that a thin film of the rinse liquid remains on the surface of the substrate G,
If the substrate G is not completely dried, even if the mist of the rinsing liquid adheres, the mist is absorbed and diffused by the film of the rinsing liquid, and does not cause a stain mark.
Further, even when mist caused by the developer adheres, the mist dissolves and diffuses into the film of the rinsing liquid, so that the mist hardly remains as stain marks. Thus, the quality of the substrate G is improved.

The setting of the number of rotations and the rotation time of the spin chuck 41 in step 13 for solving the first problem is determined experimentally.
The number of rotations and the rotation time vary depending on the size of the substrate G. This is because, if the size of the substrate G is different, the peripheral speed of the end portion of the substrate G is different, which causes a difference in the dry state of the substrate G. Generally, in a process in which the liquid film is evaporated from the state in which the liquid film is left after the droplet is shaken off from the substrate G to the drying, the drying proceeds rapidly at the peripheral portion of the substrate G having a high peripheral speed. For this reason, in step 13, it is preferable that the processing be ended when the liquid film of the rinsing liquid is formed on the peripheral portion of the substrate G.

The second problem is that a part of the resist film formed on the substrate G may be peeled off in the past. When the substrate G is rotated at a high speed to completely dry, the substrate G receives a large force on the side surface because it has a rectangular shape,
It was presumed that this force was generated because the force increased at the periphery of the substrate where the peripheral speed of rotation increased. Therefore, in step 13, the rotation speed and the rotation time of the spin chuck 41 are determined so that the rotation speed is low and the rotation time is short so that the resist film is not stripped. Note that specific conditions for solving the second problem are also determined experimentally, and differ depending on the size of the substrate G.

FIG. 5 shows an experimentally determined step 1 for solving the first and second problems.
FIG. 4 is a schematic diagram showing the range of the number of rotations and the rotation time of the spin chuck 41 in FIG. This schematic diagram shows how, when the number of rotations and the rotation time of the spin chuck 41 are variously changed, how much stain marks occur on the substrate G after the heat treatment and how much peeling of the resist film occurs. To be produced.

Region B in FIG. 5 indicates a case where the number of rotations of the spin chuck 41 is large or a case where the rotation time is long. In this case, since the substrate G is completely dried, the first region If the problem cannot be solved and the rotation speed of the spin chuck 41 is high, the resist film may be peeled off. Further, the region C in FIG.
However, since the rotation speed of the spin chuck 41 is large, the resist film may be peeled off, and the second problem cannot be solved.

Further, in a region D in FIG. 5, a liquid film of the rinsing liquid exists on the surface of the substrate G, and the resist does not peel off, but the rinsing liquid is insufficiently shaken off.
There is a possibility that the transfer arm 19a for transferring the substrate G is contaminated. Further, in the region E in FIG. 5, it is possible to perform drying to the extent that the film of the rinsing liquid remains on the substrate G. However, if conditions close to the region B are adopted, the processing time is long and the throughput is reduced. There is a problem. On the other hand, if conditions close to the region D are adopted, a long time is required for the heat treatment, which causes a problem of reducing the throughput.

On the other hand, in the region A in FIG. 5, the substrate G is not completely dried, the rinse solution is sufficiently shaken off, and the resist film does not peel off. Even if the processing time is long, the throughput is not significantly reduced. In the area A,
When the rotation speed of the spin chuck 41 is large and the processing time is short, the throughput is also improved.

It has been clarified that the use of the condition of the region A in FIG. 5 reduces the residue which has conventionally occurred on the periphery of the substrate G. Although the cause and mechanism of residue generation are not yet clear,
It is considered that reducing the number of rotations of the spin chuck 41 and shortening the rotation time contribute to suppression of generation of residues, and therefore, conditions for solving the first and second problems described above. Is also a condition for suppressing the generation of residues on the substrate G and improving the quality of the substrate. The number of rotations and the rotation time of the spin chuck 41 in step 13 can be, for example, about 5 seconds to 20 seconds at 300 to 1000 rpm.

In steps 12 and 13, the inner cup 46 and the outer cup 47 are held at the upper position. As shown on the left side of FIG. 3, when the inner cup 46 and the outer cup 47 are held in the upper position, the inner cup 46 and the cover 4
3 is wide, and the exhaust path from the space between the inner cup 46 and the outer cup 47 to the exhaust duct 49 is short, so that the pressure loss is small and the exhaust efficiency is improved.

On the other hand, when the inner cup 46 and the outer cup 47 are held at the lower position, the distance between the tapered portion of the inner cup 46 and the cover 43 is reduced, and the inner cup 46 and the outer cup 47
Since the exhaust path extending from the space to the exhaust duct 49 becomes longer due to the vertical wall of the inner cup 46, the pressure loss increases and the exhaust efficiency decreases.

That is, by holding the inner cup 46 and the outer cup 47 at the upper position, the mist generated in the inner cup 46 and the outer cup 47 can be efficiently exhausted. The flow of the air current generated by the rotation of G is easily controlled in a certain direction, and thus the generation of mist can be suppressed. The occurrence of stain marks on the substrate G is also suppressed by the effect of suppressing the generation of mist and the effect of reducing the generation of mist.

After the end of the step 13, the rotation of the spin chuck 41 is stopped to raise the spin chuck 41, and the inner cup 46 and the outer cup 47 are lowered to the lower position. Stop (step 14). Then, the transfer arm 19a is inserted into the development processing units (DEVs) 24a to 24c to transfer the substrate G, and the substrate G transferred to the transfer arm 19a is subjected to the heat treatment in any of the processing blocks 31 to 33. The rinsing liquid carried into the unit (HP) and remaining on the surface of the substrate G is removed by evaporation and post-baked on the developed resist film (Step 1).
5). In this step 15, the previous step 13
Since the processing is performed under the conditions of the region A in FIG. 5, generation of a stain mark, peeling of a resist film, and generation of a residue are suppressed, and a substrate G of good quality can be obtained.

After the completion of step 14, another substrate G is subsequently carried in by the transfer arm 19a in the developing units (DEV) 24a to 24c (step 1).
Step 4 is repeated.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, the development processing units (DEV) 24a to 24
c, the inner cup 46 and the outer cup 47
Was used, but the inner cup 4
Even if a cup composed of only 6 is used, generation of a stain mark, peeling of a resist film, and generation of a residue can be suppressed by controlling the number of rotations and the rotation time of the spin chuck 41 in step 13. In addition, as the spin chuck 41, step 13 in which the number of rotations is the largest is performed.
Since the number of rotations can be reduced as compared with the related art, as the spin chuck 41, for example, the substrate G is mounted on a plurality of fixing pins formed on a spin plate larger than the substrate G, A predetermined position on the end face of the substrate G so that the position of the substrate G does not shift when the G is rotated;
For example, it is also possible to use one using a mechanical method of holding the substrate G with another pin or the like at the four corners.

In the developing process, the inner cup 46 and the outer cup 47 are moved up and down to perform the shake-off processing of the developer, the rinsing processing, and the shake-off processing of the rinsing liquid.
It is also possible to perform processing such as shaking off the developer while raising and lowering the spin chuck 41 at a predetermined position. In the above embodiment, the substrate is an LCD
Although the substrate has been described as an example, the substrate processing method of the present invention can also be used for other substrates such as a semiconductor wafer and a CD substrate, and is not limited to development processing.
It can also be used for cleaning of these various substrates.

[0067]

As described above, according to the present invention, when a predetermined liquid treatment is performed on a substrate and then heat treatment is performed, the substrate is not completely dried at the end of the liquid treatment, and the substrate is not completely dried. By leaving a liquid film thereon and performing heat treatment from that state, generation of stain marks on the surface of the substrate is suppressed. In this manner, a remarkable effect that the substrate quality can be maintained at a high level is achieved. Also,
The generation of residues on the substrate is also suppressed, and the quality of the substrate can be improved. Further, when the substrate processing method of the present invention is applied to a development processing method, the state in which the liquid film is formed on the substrate at the end stage of the liquid processing can reduce the number of rotations of the substrate. Since this is performed by shortening the rotation time of the substrate, damage to the resist film is reduced. Therefore, peeling of the resist film is prevented, the quality of the substrate is improved, and the reliability of the product is improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing a resist coating / developing processing system which is an embodiment of a liquid processing apparatus to which a substrate processing method of the present invention can be applied.

FIG. 2 is a plan view showing an embodiment of a developing unit used in the resist coating and developing system shown in FIG. 1;

FIG. 3 is a sectional view of the developing unit shown in FIG. 2;

FIG. 4 is an explanatory view showing one embodiment of a working process of the substrate processing method of the present invention.

FIG. 5 is an explanatory view showing an applicable range of the substrate processing method of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1; Cassette station 2; Processing part 3; Interface parts 24a-24c; Development processing unit (DEV) 41; Spin chucks 44 and 45; Under cup 46; Inner cup 47; Three-way switching valve 80; paddle forming nozzle 100; resist coating and developing processing system G; substrate (substrate to be processed)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) B05D 3/10 B08B 3/02 B B08B 3/02 3/08 Z 3/08 G03F 7/30 502 G03F 7 / 30 502 H01L 21/30 562 564C 566 569C F term (reference) 2H096 AA25 AA28 GA29 JA04 3B201 AA02 AA03 AB01 AB33 AB47 BB21 BB91 CC01 CC11 4D075 AC64 AC79 AC84 AC88 AC91 AC93 AC94 AE03 BB04 BB03 DA04 BB DB14 DC22 DC24 EA05 EA19 EA45 4F042 AA02 AA07 BA01 BA05 CC04 CC07 CC09 DB17 DB41 DE09 DF07 DF28 DF32 EB09 EB24 EB25 EB29 ED05 ED12 5F046 AA17 JA22 KA10 LA18

Claims (8)

[Claims] 1. A substrate processing method for performing a series of liquid processing on a substrate and a drying processing after the liquid processing, wherein a first processing liquid is supplied to a substrate held substantially horizontally.
A second step of rotating the substrate at a predetermined number of revolutions for a predetermined time so that the predetermined processing solution remains in the form of a film on the substrate surface; and A third step of drying the substrate by evaporating the processing liquid. 2. A substrate processing method for performing a series of liquid processing on a substrate and a drying processing after the liquid processing, wherein a first processing liquid is applied to a substrate held substantially horizontally.
A step of applying a second processing liquid to the substrate on which the first processing liquid is applied, and removing the first processing liquid from the substrate; and forming the second processing liquid on the substrate surface in a film form. A third step of rotating the substrate at a predetermined number of revolutions for a predetermined time so as to remain on the substrate, and a fourth step of heat-treating the substrate in which the second processing liquid remains in a film form and drying the substrate. Characteristic substrate processing method. 3. In the third step, the second processing liquid remains in a film form on the substrate by reducing the number of rotations of the substrate and / or shortening the rotation processing time of the substrate. The substrate processing method according to claim 2, wherein the method is performed. 4. A method for developing a substrate on which a resist film has been formed and which has been exposed to light, comprising: a first step of applying a developing solution to the substrate to perform development; A second step of applying a rinsing liquid to remove the developing solution from the substrate, a third step of rotating the substrate coated with the rinsing liquid so that the rinsing liquid remains on the substrate surface in a film form, A fourth step of heat-treating the substrate remaining in the shape and drying the substrate. 5. A rotatable spin chuck for holding a substrate substantially horizontally, an inner cup provided to be movable up and down so as to surround a periphery of the substrate held by the spin chuck, and surrounding the inner cup. And a developing apparatus having a resist film formed thereon and an exposure processing performed by using a developing apparatus having an outer cup provided so as to be movable up and down. A first step of applying a developing solution to the substrate in a state where the inner cup is arranged on the periphery of the substrate held at the first step to perform development, and applying the developing solution while rotating the spin chuck at a predetermined rotation speed. A second step of supplying a rinsing liquid to the rinsed substrate and flowing out a developing solution from the substrate, and positioning an outer cup on a peripheral edge of the substrate while rotating the spin chuck at a predetermined rotation speed. A third step of supplying a rinsing liquid to the substrate to remove a residue of the developing solution; and arranging an inner cup on a peripheral edge of the substrate, and supplying the rinsing liquid to the substrate while rotating the spin chuck at a predetermined rotation speed. A fourth step of cleaning the inner wall of the inner cup with a rinse liquid shaken off from the substrate, and stopping the supply of the rinse liquid to the substrate and rotating the spin chuck so that the rinse liquid remains on the substrate surface in a film form. A developing method, comprising: five steps; and a sixth step of heat-treating the substrate with the rinsing liquid remaining in the form of a film to dry the substrate. 6. A method of reducing the number of rotations of a spin chuck and / or a method of shortening a rotation processing time of a substrate as a method of leaving a rinse liquid in a film form on a substrate surface. The development processing method according to claim 4 or 5. 7. A method for leaving a rinsing liquid in a film form on the substrate surface, wherein the rotation of the spin chuck is stopped in a state where the rinsing liquid remains on the outermost peripheral portion of the substrate when the spin chuck is rotated. The developing method according to any one of claims 4 to 6, wherein the developing method is used. 8. A method for developing a substrate on which a resist film has been formed and which has been exposed to light, comprising: a first step of applying a developing solution to the substrate to perform development; A second step of applying a rinsing liquid to remove the developing solution from the substrate; and rotating the substrate at a low speed or reducing the rotation processing time so that the resist film formed on the substrate does not partially peel off. And a third step of performing a rotation process.