JP2002274940A - Raw material powder for ceramics, method for manufacturing the same, ceramic and method for manufacturing the same, and method for manufacturing laminated ceramic electronic part - Google Patents
Raw material powder for ceramics, method for manufacturing the same, ceramic and method for manufacturing the same, and method for manufacturing laminated ceramic electronic partInfo
- Publication number
- JP2002274940A JP2002274940A JP2001073547A JP2001073547A JP2002274940A JP 2002274940 A JP2002274940 A JP 2002274940A JP 2001073547 A JP2001073547 A JP 2001073547A JP 2001073547 A JP2001073547 A JP 2001073547A JP 2002274940 A JP2002274940 A JP 2002274940A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- porcelain
- raw material
- material powder
- calcining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 title claims abstract description 122
- 239000002994 raw material Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000919 ceramic Substances 0.000 title abstract description 33
- 238000001354 calcination Methods 0.000 claims abstract description 60
- 239000010936 titanium Substances 0.000 claims abstract description 47
- 229910052788 barium Inorganic materials 0.000 claims abstract description 22
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000002156 mixing Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 238000010298 pulverizing process Methods 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 67
- 238000005406 washing Methods 0.000 claims description 28
- 239000011812 mixed powder Substances 0.000 claims description 15
- 238000010304 firing Methods 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 26
- 238000004140 cleaning Methods 0.000 abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 229910002113 barium titanate Inorganic materials 0.000 description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910018879 Pt—Pd Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、チタン酸バリウム
系セラミック材料を還元焼成し、その後再酸化処理を施
して得られる、正の抵抗温度特性を有する磁器、中で
も、複数の内部電極と複数のセラミック層とを備える、
例えば積層型の正特性サーミスタに用いられる磁器用原
料粉末の製造方法、および、これによって得られた原料
粉末からなる磁器の製造方法、ならびに前記磁器を用い
た積層セラミック電子部品の製造方法に関するものであ
る。BACKGROUND OF THE INVENTION The present invention relates to a ceramic having a positive resistance temperature characteristic obtained by reducing and firing a barium titanate-based ceramic material and then performing a re-oxidation treatment. And a ceramic layer,
For example, the present invention relates to a method for producing a raw material powder for porcelain used in a laminated positive temperature coefficient thermistor, a method for producing a porcelain made of the raw material powder obtained thereby, and a method for producing a laminated ceramic electronic component using the porcelain. is there.
【0002】[0002]
【従来の技術】従来より、チタン酸バリウム系半導体磁
器は、常温では比抵抗が小さく、ある温度(キュリー温
度)を超えると急激に抵抗が上昇するという、正の抵抗
温度特性(PTC(positive temperature coefficient
(正の温度係数)特性)を有しており、温度制御、過電
流保護、定温度発熱等の用途に広く用いられている。2. Description of the Related Art Conventionally, barium titanate-based semiconductor porcelain has a positive resistance-temperature characteristic (PTC (positive temperature characteristic); coefficient
(Positive temperature coefficient) characteristic, and is widely used for applications such as temperature control, overcurrent protection, and constant-temperature heat generation.
【0003】そして、回路用として用いられている過電
流保護用の電子部品は、室温での低抵抗化が要望されて
いる。特に、USB(Universal Serial Bus)対応のパ
ソコン周辺機器においては、小型で低抵抗、高耐圧の半
導体セラミック電子部品が切に望まれている。There is a demand for low resistance at room temperature of electronic components for overcurrent protection used for circuits. In particular, for a personal computer peripheral device compatible with a USB (Universal Serial Bus), a small, low-resistance, high-voltage semiconductor ceramic electronic component is urgently desired.
【0004】このような要望に対応するものとして、積
層型の半導体セラミック電子部品が特開昭57−608
02号公報に開示されている。この積層型半導体セラミ
ック部品は、チタン酸バリウムを主成分とする半導体セ
ラミック層と、Pt−Pd(白金−パラジウム)合金か
らなる内部電極層とを交互に積層して一体焼成したもの
である。このように積層構造にすることによって、半導
体セラミック電子部品の有する電極面積が大幅に大きく
なり、電子部品自体の小型化も図ることができる。しか
しながら、この積層型半導体セラミック電子部品では、
内部電極と半導体セラミック層とのオーミック接触が得
られにくく、室温抵抗値が大幅に上昇するという問題が
ある。To meet such a demand, a laminated semiconductor ceramic electronic component is disclosed in Japanese Patent Laid-Open No. 57-608.
No. 02 is disclosed. This laminated semiconductor ceramic component is obtained by alternately laminating a semiconductor ceramic layer containing barium titanate as a main component and an internal electrode layer made of a Pt-Pd (platinum-palladium) alloy and integrally firing. With such a laminated structure, the electrode area of the semiconductor ceramic electronic component is greatly increased, and the electronic component itself can be reduced in size. However, in this multilayer semiconductor ceramic electronic component,
Ohmic contact between the internal electrode and the semiconductor ceramic layer is hardly obtained, and there is a problem that the room temperature resistance value is significantly increased.
【0005】そこで、Pt−Pd合金に代わる内部電極
材料として、Ni(ニッケル)系金属を用いた積層型半
導体セラミック電子部品が特開平6−151103号公
報に開示されている。Ni系金属を用いた内部電極材料
は、半導体セラミックとのオーミック接触が得られるた
め、室温抵抗値の上昇を防止することができる。しかし
ながら、この積層型半導体セラミック素子は、通常の大
気中焼成では酸化されてしまうため、一旦還元雰囲気中
にて焼成を行った後、Ni系金属が酸化されない程度の
温度で再酸化処理を行うことが必要である。Japanese Patent Laid-Open Publication No. 6-151103 discloses a multilayer semiconductor ceramic electronic component using a Ni (nickel) -based metal as an internal electrode material instead of a Pt-Pd alloy. An internal electrode material using a Ni-based metal can achieve an ohmic contact with a semiconductor ceramic, so that an increase in room temperature resistance can be prevented. However, since this laminated semiconductor ceramic element is oxidized by normal firing in the air, it is necessary to perform a re-oxidation process at a temperature at which the Ni-based metal is not oxidized after firing in a reducing atmosphere once. is necessary.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、この種
の還元焼成/再酸化という工程を経て得られた積層型半
導体セラミック素子の抵抗値は、半導体セラミック層を
形成するチタン酸バリウム系材料のBa(バリウム)サ
イト/Ti(チタン)サイト比(以下、「Ba/Ti
比」と表記する)に対して非常に敏感であるため、実用
上問題のない室温抵抗値が得られるBa/Ti比の範囲
がごく狭いものとなってしまう。したがって、Ba/T
i比のわずかな誤差も許されず、その調整は非常に困難
なものとなっていた。However, the resistance value of the laminated semiconductor ceramic device obtained through this kind of reduction firing / reoxidation process is based on the barium titanate-based material Ba (forming the semiconductor ceramic layer). Barium) site / Ti (titanium) site ratio (hereinafter, “Ba / Ti
Ratio) is very sensitive, and the range of the Ba / Ti ratio in which a room temperature resistance value that does not have a practical problem is obtained becomes very narrow. Therefore, Ba / T
Even a slight error in the i-ratio was not allowed, and its adjustment was very difficult.
【0007】本発明は、上記の問題点を解決するために
なされたもので、その目的は、低抵抗で、十分な抵抗変
化幅を有するBa/Ti比を従来のものに比べ広くとる
ことのできる磁器用原料粉末の製造方法、および、これ
によって得られた磁器用原料粉末からなる磁器の製造方
法、ならびに前記磁器を用いた積層セラミック電子部品
の製造方法を提供することにある。The present invention has been made to solve the above problems, and an object of the present invention is to increase the Ba / Ti ratio, which is low in resistance and has a sufficient resistance change width, as compared with the conventional one. An object of the present invention is to provide a method for producing a raw material powder for porcelain, a method for producing a porcelain made of the raw material powder for porcelain obtained thereby, and a method for producing a multilayer ceramic electronic component using the porcelain.
【0008】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明者は鋭意研究を重ねた結果、ある特定の製造
方法で作製された原料粉末を用いることによって、小型
かつ低抵抗で、十分な抵抗変化幅を有し、さらには、幅
広いBa/Ti比において特性を発現する積層型半導体
セラミック素子が得られることを見出し、本発明をなす
に至ったものである。Means for Solving the Problems In order to achieve the above object, the present inventor has conducted intensive studies, and as a result, by using a raw material powder produced by a specific manufacturing method, a small and low-resistance material has been obtained. The present inventors have found that a laminated semiconductor ceramic element having a sufficient resistance change width and exhibiting characteristics in a wide range of Ba / Ti ratio can be obtained, and the present invention has been accomplished.
【0009】本発明の磁器用原料粉末の製造方法は、上
記の課題を解決するために、少なくともバリウムおよび
チタンを含む原料粉末を混合して、混合粉末を得る混合
工程と、上記混合粉末を所定温度で仮焼した後、粉砕し
て、仮焼粉末を得る第1の仮焼工程と、先の仮焼工程で
得られた仮焼粉末を所定温度で仮焼した後、粉砕して、
仮焼粉末を得る第2の仮焼工程とを含み、かつ、上記第
2の仮焼工程を1回以上行うことを特徴としている。In order to solve the above-mentioned problems, a method for producing a raw material powder for porcelain according to the present invention comprises mixing a raw material powder containing at least barium and titanium to obtain a mixed powder; After calcining at a temperature, pulverizing, the first calcining step to obtain a calcined powder, and calcining the calcined powder obtained in the previous calcining step at a predetermined temperature, then pulverizing,
And a second calcining step of obtaining a calcined powder, and wherein the second calcining step is performed one or more times.
【0010】本発明の磁器用原料粉末の製造方法は、上
記の課題を解決するために、さらに、上記仮焼粉末を洗
浄する洗浄工程と、上記洗浄工程の後に、バリウムを上
記仮焼粉末に補充する組成比補正工程と、を含むことを
特徴としている。In order to solve the above-mentioned problems, the method for producing a raw material powder for porcelain of the present invention further comprises a washing step of washing the calcined powder, and after the washing step, barium is added to the calcined powder. And replenishing the composition ratio.
【0011】本発明の磁器用原料粉末の製造方法は、上
記の課題を解決するために、さらに、上記第2の仮焼工
程を1回行うことを特徴としている。The method for producing a raw material powder for porcelain of the present invention is characterized in that in order to solve the above-mentioned problems, the second calcination step is further performed once.
【0012】また、本発明の磁器用原料粉末の製造方法
は、上記の課題を解決するために、少なくともバリウム
およびチタンを含む原料粉末を混合して、混合粉末を得
る混合工程と、上記混合粉末を所定温度で仮焼した後、
粉砕して、仮焼粉末を得る仮焼工程と、を含む磁器用原
料粉末の製造方法であって、上記仮焼粉末を洗浄する洗
浄工程と、上記洗浄工程の後に、バリウムを上記仮焼粉
末に補充する組成比補正工程と、を含むことを特徴とし
ている。Further, in order to solve the above-mentioned problems, the method for producing a raw material powder for porcelain according to the present invention comprises mixing a raw material powder containing at least barium and titanium to obtain a mixed powder; After calcining at a predetermined temperature,
A calcining step of pulverizing to obtain a calcined powder, comprising: a washing step of washing the calcined powder; and after the washing step, barium is added to the calcined powder. And correcting the composition ratio.
【0013】また、本発明の磁器用原料粉末は、上記の
課題を解決するために、上記磁器用原料粉末の製造方法
によって得られることを特徴としている。[0013] In order to solve the above problems, the raw material powder for porcelain of the present invention is characterized by being obtained by the above-mentioned method for producing raw material powder for porcelain.
【0014】上記のように、本発明の磁器用原料粉末の
製造方法は、少なくとも2回以上仮焼を行う。さらに、
得られた仮焼粉末を洗浄後、バリウムを補充する。As described above, in the method for producing a raw material powder for porcelain according to the present invention, calcination is performed at least twice. further,
After washing the calcined powder obtained, barium is replenished.
【0015】これにより、上記磁器用原料粉末の製造方
法で得られた磁器用原料粉末を用いれば、低抵抗で、極
めて広い抵抗変化幅を有するBa/Ti比を従来のもの
に比べ広くとることのできる磁器が得られる。例えば、
室温抵抗値が0.2Ω以下、かつ、抵抗変化幅が3.5
桁以上の特性を有する積層型半導体セラミック素子を製
造できる。したがって、回路用、中でもUSB対応のパ
ソコン周辺機器において用いられる過電流保護素子の実
用化を大きく推進することが可能となる。Thus, by using the porcelain raw material powder obtained by the above-described method for producing a porcelain raw material powder, the Ba / Ti ratio having a low resistance and an extremely wide range of resistance change can be made wider than that of the conventional one. The porcelain which can be obtained is obtained. For example,
Room temperature resistance value is 0.2Ω or less and resistance change width is 3.5
It is possible to manufacture a laminated semiconductor ceramic element having characteristics of an order of magnitude or more. Therefore, it is possible to greatly promote the practical use of overcurrent protection elements used for circuits, especially for USB-compatible personal computer peripherals.
【0016】また、本発明の磁器の製造方法は、上記の
課題を解決するために、上記の磁器用原料粉末の製造方
法によって得られた磁器用原料粉末を主材料として、成
形後、焼成することを特徴としている。In order to solve the above-mentioned problems, the method for manufacturing porcelain according to the present invention uses the raw material powder for porcelain obtained by the above-described method for manufacturing raw material porcelain as a main material, and then forms and fires. It is characterized by:
【0017】また、本発明の磁器は、上記の課題を解決
するために、上記磁器の製造方法によって得られること
を特徴としている。According to another aspect of the present invention, there is provided a porcelain obtained by the above-described method of manufacturing a porcelain.
【0018】上記の方法により、上記の磁器用原料粉末
の製造方法によって得られた磁器用原料粉末を主材料と
して用いれば、小型かつ低抵抗で、十分な抵抗変化幅を
有し、さらには、幅広いBa/Ti比において特性を発
現する積層型半導体セラミック素子等に用いることがで
きる磁器が得られる。By using the raw material powder for porcelain obtained by the above-mentioned method for producing raw material powder for porcelain as a main material by the above method, it is small, low-resistance, has a sufficient resistance change width, and A porcelain that can be used for a laminated semiconductor ceramic element or the like that exhibits characteristics in a wide range of Ba / Ti ratio can be obtained.
【0019】また、本発明の積層セラミック電子部品の
製造方法は、上記の課題を解決するために、上記の磁器
用原料粉末の製造方法によって得られた磁器用原料粉末
を主材料としてなるセラミック材料層と、導電性ペース
トからなる内部電極層とを所定層数積層して積層体を得
る工程と、上記積層体を還元雰囲気中で焼成した後、酸
化雰囲気中で再酸化処理を行って積層焼結体を得る工程
と、上記積層焼結体の表面に外部電極を形成する工程
と、を含むことを特徴としている。Further, in order to solve the above-mentioned problems, a method of manufacturing a multilayer ceramic electronic component according to the present invention provides a ceramic material mainly comprising a porcelain raw material powder obtained by the above-described porcelain raw material powder manufacturing method. Stacking a predetermined number of layers and internal electrode layers made of a conductive paste to obtain a laminate, firing the laminate in a reducing atmosphere, and then performing a re-oxidation treatment in an oxidizing atmosphere to laminate The method is characterized by including a step of obtaining a sintered body and a step of forming an external electrode on the surface of the laminated sintered body.
【0020】上記の方法により、上記の磁器用原料粉末
の製造方法によって得られた磁器用原料粉末を主材料と
して用いれば、小型かつ低抵抗で、十分な抵抗変化幅を
有し、さらには、幅広いBa/Ti比において特性を発
現する積層セラミック電子部品が得られる。By using the raw material powder for porcelain obtained by the above-described method for producing raw material powder for porcelain as a main material by the above method, it is small in size, low in resistance, has a sufficient resistance variation width, and A multilayer ceramic electronic component exhibiting characteristics in a wide range of Ba / Ti ratio can be obtained.
【0021】なお、上記のような積層セラミック電子部
品では、内部電極は、Ni系金属、すなわちニッケルま
たはニッケル含有合金のようなニッケルを含有する金属
をもって、その導伝成分を構成することが好ましい。In the multilayer ceramic electronic component as described above, it is preferable that the internal electrode is made of a Ni-based metal, that is, a nickel-containing metal such as nickel or a nickel-containing alloy, to constitute a conductive component thereof.
【0022】[0022]
【発明の実施の形態】本発明において得られる磁器用原
料粉末は、積層型半導体やコンデンサに好適である。BEST MODE FOR CARRYING OUT THE INVENTION The raw material powder for porcelain obtained in the present invention is suitable for laminated semiconductors and capacitors.
【0023】本発明において得られる積層型半導体セラ
ミック素子における半導体セラミック層は、チタン酸バ
リウム系半導体セラミック粉末を焼結させて得られるも
のである。このチタン酸バリウム系半導体セラミック材
料において、必要に応じて、Baの一部をCa(カルシ
ウム),Sr(ストロンチウム),Pb(鉛)等で置換
しても、あるいは、Tiの一部をSn(スズ),Zr
(ジルコニウム)等で置換してもよい。また、このよう
なチタン酸バリウム系半導体セラミック材料に含まれる
半導体化剤は、ドナー元素と呼ばれるものであるが、こ
のようなドナー元素としては、La(ランタン),Y
(イットリウム),Sm(サマリウム),Ce(セリウ
ム),Dy(ジスプロシウム),Gd(ガドリニウム)
等の希土類元素や、Nb(ニオブ),Ta(タンタ
ル),Bi(ビスマス),Sb(アンチモン),W(タ
ングステン)等の遷移元素を用いることができる。ま
た、この他にも、このようなチタン酸バリウム系半導体
セラミック材料に対して、必要に応じて、SiO2 (二
酸化ケイ素)やMn(マンガン)等を添加してもよい。The semiconductor ceramic layer in the laminated semiconductor ceramic device obtained in the present invention is obtained by sintering barium titanate-based semiconductor ceramic powder. In this barium titanate-based semiconductor ceramic material, a part of Ba may be replaced by Ca (calcium), Sr (strontium), Pb (lead) or the like, or a part of Ti may be replaced by Sn ( Tin), Zr
(Zirconium) or the like. The semiconducting agent contained in such a barium titanate-based semiconductor ceramic material is called a donor element, and examples of such a donor element include La (lanthanum) and Y.
(Yttrium), Sm (samarium), Ce (cerium), Dy (dysprosium), Gd (gadolinium)
And transition elements such as Nb (niobium), Ta (tantalum), Bi (bismuth), Sb (antimony), and W (tungsten). In addition, SiO 2 (silicon dioxide), Mn (manganese), or the like may be added to such a barium titanate-based semiconductor ceramic material as needed.
【0024】このようなチタン酸バリウム系半導体セラ
ミック粉末に関しては、その合成方法を特に限定するも
のではなく、例えば、固相法、水熱法、共沈法、ゾルゲ
ル法等を用いることができる。The method for synthesizing such a barium titanate-based semiconductor ceramic powder is not particularly limited, and for example, a solid phase method, a hydrothermal method, a coprecipitation method, a sol-gel method and the like can be used.
【0025】また、内部電極に用いる導電成分として
は、Ni(ニッケル)系金属、Mo(モリブデン)系金
属、Cr(クロム)系金属、または、これらの合金を用
いることができるが、半導体セラミック層との間での確
実なオーミック接触を可能とする点から、特にNi系金
属を用いることが望ましい。As the conductive component used for the internal electrode, Ni (nickel) -based metal, Mo (molybdenum) -based metal, Cr (chromium) -based metal, or an alloy thereof can be used. In particular, it is desirable to use a Ni-based metal from the viewpoint of enabling a reliable ohmic contact between the Ni-based metal.
【0026】[0026]
【実施例】〔実施例1〕実施例1として、2段階あるい
は3段階に仮焼および洗浄を行う場合について説明す
る。[Embodiment 1] As Embodiment 1, a case where calcination and cleaning are performed in two or three stages will be described.
【0027】出発原料として、BaCO3 (炭酸バリウ
ム),TiO2 (二酸化チタン),硝酸Sm溶液を用
い、元素モル比として、Sm/Ti=0.002となる
ように秤量を行い、純水およびPSZ(partially stab
ilized zirconia (部分安定化ジルコニア))5Φ(直
径5mm)の玉石を用いて5時間ボールミルによる混合
を行った。なお、上記調合時においては、仕込みのBa
/Ti比を1.000〜1.010として秤量を行って
いる。その後、蒸発乾燥を行い、得られた混合粉を12
00℃、2時間で仮焼して1段仮焼粉を得た(第1の仮
焼工程)。As starting materials, BaCO 3 (barium carbonate), TiO 2 (titanium dioxide), and a solution of Sm nitrate were weighed so that the element molar ratio became Sm / Ti = 0.002. PSZ (partially stab
ilized zirconia (partially stabilized zirconia) Using a ball of 5Φ (diameter: 5 mm), mixing was performed by a ball mill for 5 hours. In addition, at the time of the above blending, the Ba
The weighing is performed with the / Ti ratio being 1.00 to 1.010. After that, evaporation and drying were performed, and the obtained mixed powder was 12
The first-stage calcined powder was obtained by calcining at 00 ° C. for 2 hours (first calcining step).
【0028】その後、得られた1段仮焼粉に対して、再
び純水およびPSZ5Φの玉石を用いて5時間ボールミ
ルによる粉砕/混合を行った。その後、蒸発乾燥を行
い、得られた混合粉を再び1200℃、2時間で仮焼し
て2段仮焼粉を得た(第2の仮焼工程)。Thereafter, the obtained one-stage calcined powder was ground / mixed again with a ball mill for 5 hours using pure water and a cobblestone of PSZ 5Φ. Thereafter, evaporation drying was performed, and the obtained mixed powder was calcined again at 1200 ° C. for 2 hours to obtain a two-stage calcined powder (second calcining step).
【0029】さらに、得られた2段仮焼粉に対して、再
び純水およびPSZ5Φの玉石を用いて5時間ボールミ
ルによる粉砕/混合を行った。その後、蒸発乾燥を行
い、得られた混合粉を再び1200℃、2時間で仮焼し
て3段仮焼粉を得た(第2の仮焼工程)。Further, the obtained two-stage calcined powder was ground / mixed again with a ball mill for 5 hours using pure water and a cobblestone of PSZ5Φ. Thereafter, evaporation drying was performed, and the obtained mixed powder was calcined again at 1200 ° C. for 2 hours to obtain a three-stage calcined powder (second calcining step).
【0030】ここで、仮焼工程の条件は、仮焼温度を1
100〜1250℃、雰囲気を大気中(酸化雰囲気)に
することが好ましい。なお、これら仮焼条件は各仮焼工
程において同一条件としてもよいし、各仮焼工程ごとに
変更してもよい。また、2段目以降の仮焼工程(第2の
仮焼工程)の回数を増やせば、良好な特性が得られるB
a/Ti比の幅が広がるが、抵抗変化幅が多少小さくな
る。よって、第2の仮焼工程は1回、すなわち仮焼工程
を合計2回に止めておくことが好ましい。Here, the conditions of the calcination step are as follows:
It is preferable that the temperature is 100 to 1250 ° C. and the atmosphere is an atmosphere (oxidizing atmosphere). These calcination conditions may be the same in each calcination step, or may be changed for each calcination step. Further, if the number of times of the calcination step (second calcination step) of the second and subsequent stages is increased, good characteristics can be obtained.
Although the width of the a / Ti ratio is widened, the width of change in resistance is slightly reduced. Therefore, it is preferable that the second calcination step is performed once, that is, the calcination step is stopped twice in total.
【0031】次に、得られた1段仮焼粉、2段仮焼粉、
3段仮焼粉に、有機溶媒、有機バインダー、可塑剤等を
添加してスラリーとした後、ドクターブレード法により
成形し、グリーンシートを得た。Next, the obtained one-stage calcined powder, two-stage calcined powder,
An organic solvent, an organic binder, a plasticizer and the like were added to the three-stage calcined powder to form a slurry, which was then molded by a doctor blade method to obtain a green sheet.
【0032】次に、これらのグリーンシート上にNi電
極ペーストをスクリーン印刷して内部電極とした。さら
に、この内部電極が交互に露出するようにグリーンシー
トを積層し、加圧圧着、切断を行って積層体とした。な
お、本発明の積層体には、その上下に内部電極を印刷し
ていないダミーのグリーンシートを重ねて圧着してい
る。Next, Ni electrode paste was screen-printed on these green sheets to form internal electrodes. Further, green sheets were laminated such that the internal electrodes were alternately exposed, and pressure-compression bonding and cutting were performed to form a laminate. It should be noted that a dummy green sheet having no internal electrode printed thereon is overlaid and pressed on the laminate of the present invention.
【0033】その後、この積層体を大気中で脱バインダ
ー処理した後、水素/窒素=3/100の強還元雰囲気
中にて2時間焼成を行い積層焼結体を得た。さらに、大
気中で600〜1000℃で1時間再酸化処理を施し
た。その後、端面にオーミック銀ペーストを塗付して大
気中で焼き付けを行い、積層素子を得た。得られた積層
素子の形状は、概ね3.2mmL(長さ)×2,5mm
W(幅)×1.0mmt(厚さ)である。Thereafter, the laminate was subjected to a binder removal treatment in the air, and then fired for 2 hours in a strong reducing atmosphere of hydrogen / nitrogen = 3/100 to obtain a laminated sintered body. Further, a reoxidation treatment was performed at 600 to 1000 ° C. for 1 hour in the air. Thereafter, an ohmic silver paste was applied to the end face and baked in the air to obtain a laminated element. The shape of the obtained laminated element is approximately 3.2 mmL (length) × 2.5 mm
W (width) × 1.0 mmt (thickness).
【0034】次に、作製した積層素子の室温抵抗、抵抗
変化幅を測定した。室温抵抗はデジタルボルトメーター
を用いて4端子法で測定した。また、抵抗変化幅(桁)
は室温から250℃までにおける最大抵抗値を最小抵抗
値で除し、その常用対数で算出した。これらの結果を表
1に示す。なお、表1中の*印は本発明の範囲外を示
す。Next, the room temperature resistance and the resistance change width of the manufactured laminated element were measured. Room temperature resistance was measured by a four-terminal method using a digital voltmeter. Also, resistance change width (digit)
Was calculated by dividing the maximum resistance value from room temperature to 250 ° C. by the minimum resistance value and using the common logarithm. Table 1 shows the results. In addition, * mark in Table 1 shows the outside of the range of the present invention.
【0035】[0035]
【表1】 [Table 1]
【0036】表1に示すように、通常の仮焼プロセス
(1段仮焼)においては、所望の特性(本実施例1で
は、室温抵抗値が0.2Ω以下、かつ、抵抗変化幅が
3.5桁以上とする)を発現するBa/Ti比が、ある
特定の値(本実施例1では、仕込みBa/Ti比=1.
001)でしかなく、実用上問題がある。As shown in Table 1, in the ordinary calcination process (one-stage calcination), desired characteristics (in the first embodiment, the room temperature resistance value is 0.2Ω or less and the resistance change width is 3Ω or less). The Ba / Ti ratio that expresses .5 or more digits is a specific value (in the first embodiment, the charged Ba / Ti ratio = 1.
001), there is a practical problem.
【0037】この点、表1に示すように、2段仮焼を施
すことで、上記特性を発現するBa/Ti比の範囲が2
/1000(仕込みBa/Ti比が1.003〜1.0
04)に広がる。さらに、3段仮焼を施すことで、抵抗
変化幅は若千低下するものの、上記特性を発現するBa
/Ti比の範囲が3/1000(仕込みBa/Ti比が
1.004〜1.006)に広がる。In this regard, as shown in Table 1, by performing the two-stage calcination, the range of the Ba / Ti ratio exhibiting the above-mentioned characteristics is 2
/ 1000 (charged Ba / Ti ratio is 1.003-1.0
04). Further, by performing the three-stage calcination, the resistance change width is reduced by a small amount, but Ba, which exhibits the above characteristics, is obtained.
The range of the / Ti ratio expands to 3/1000 (the charged Ba / Ti ratio is 1.004 to 1.006).
【0038】このように、仮焼を複数回行うことによっ
て(2段仮焼粉,3段仮焼粉)、所望の特性を発現する
Ba/Ti比の幅を広げることができる。As described above, by performing the calcining a plurality of times (two-stage calcined powder and three-stage calcined powder), it is possible to widen the range of the Ba / Ti ratio that expresses desired characteristics.
【0039】〔実施例2〕実施例2として、1段階ある
いは2段階に仮焼および洗浄を行うとともに、洗浄によ
って溶出したバリウムを補充する場合について説明す
る。[Embodiment 2] As Embodiment 2, a case will be described in which calcination and washing are performed in one or two stages, and barium eluted by washing is replenished.
【0040】まず、実施例1の仮焼工程で得られた1段
仮焼粉のうち、仕込みBa/Ti=1.000のもの
を、80〜100℃の温水タンクに投入してスラリーと
し、該スラリーをスタティックミキサーを介して3時間
循環させた(洗浄工程)。その後、遠心分離器による脱
水乾燥を行った。この温水洗浄→脱水乾燥の操作を3回
行った。得られた洗浄粉のBa/Ti比は、蛍光X線分
析により0.990であった。First, of the one-stage calcined powder obtained in the calcining step of Example 1, the one with the charged Ba / Ti = 1.000 was put into a hot water tank at 80 to 100 ° C. to form a slurry. The slurry was circulated through a static mixer for 3 hours (washing step). Thereafter, dehydration and drying were performed using a centrifuge. This operation of washing with warm water → dehydration / drying was performed three times. The Ba / Ti ratio of the obtained washing powder was 0.990 by fluorescent X-ray analysis.
【0041】同様に、実施例1の仮焼工程で得られた2
段仮焼粉のうち、仕込みBa/Ti=1.000のもの
を、80〜100℃の温水タンクに投入してスラリーと
し、該スラリーをスタティックミキサーを介して3時間
循環させた(洗浄工程)。その後、遠心分離器による脱
水乾燥を行った。この温水洗浄→脱水乾燥の操作を3回
行った。得られた洗浄粉のBa/Ti比は、蛍光X線分
析により0.994であった。Similarly, 2 obtained in the calcining step of Example 1
Of the step calcined powder, the charged Ba / Ti = 1.000 was charged into a hot water tank at 80 to 100 ° C. to form a slurry, and the slurry was circulated through a static mixer for 3 hours (washing step). . Thereafter, dehydration and drying were performed using a centrifuge. This operation of washing with warm water → dehydration / drying was performed three times. The Ba / Ti ratio of the obtained cleaning powder was 0.994 by fluorescent X-ray analysis.
【0042】次に、上記工程で得られた洗浄済み1段仮
焼粉に対して、Ba/Ti=0.992,0.994,
0.996,0.998,1.000,1.002,
1.004となるようにBa補正を行った(組成比補正
工程)。同様に、洗浄済み2段仮焼粉に対して、Ba/
Ti=0.996,0.998,1.000,1.00
2,1.004となるようにBa補正を行った(組成比
補正工程)。Next, with respect to the washed one-stage calcined powder obtained in the above step, Ba / Ti = 0.992, 0.994,
0.996, 0.998, 1.000, 1.002,
Ba correction was performed so as to be 1.004 (composition ratio correction step). Similarly, for the washed two-stage calcined powder, Ba /
Ti = 0.996, 0.998, 1.000, 1.00
Ba correction was performed so as to be 2,1.04 (composition ratio correction step).
【0043】ここで、洗浄後にバリウムを補充するの
は、洗浄によって溶出したバリウム元素を補うためであ
る。そして、補充するバリウムの量を調整することによ
って、仮焼した後であってもBa/Ti比を調整するこ
とができ、所望のBa/Ti比の設計をより確実に行う
ことが可能となる。なお、バリウムの補充は、少なくと
も最終段の仮焼・洗浄後に1回行えばよい。また、最終
段以外の仮焼・洗浄後にもバリウムの補充を適宜行って
もよい。Here, the reason why barium is replenished after the washing is to make up for the barium element eluted by the washing. By adjusting the amount of barium to be replenished, the Ba / Ti ratio can be adjusted even after calcination, and a desired Ba / Ti ratio can be more reliably designed. . The replenishment of barium may be performed at least once after the final calcination and cleaning. In addition, barium may be appropriately replenished after the calcination / cleaning other than the last stage.
【0044】上記Ba補正は、具体的には、まず洗浄済
み仮焼粉末のBa/Ti比を蛍光X線分析により測定し
て、仮焼粉末を所望のBa/Ti比とするためのBa補
正量を算出する。次に、上記Ba補正量分のBa元素を
含んだ水酸化バリウム水溶液(Ba(OH)2・8H
2O)を上記洗浄済み仮焼粉末と混合し、水のみを蒸発
させることによってチタン酸バリウム系粉末を得る。な
お、本実施例2では、溶媒として水を用いたが特にこれ
に限定するものではない。また、所定量の炭酸バリウム
(BaCO3 )粉末を直接仮焼粉末に混合してもよい。Specifically, the Ba correction is performed by first measuring the Ba / Ti ratio of the washed calcined powder by X-ray fluorescence analysis, and adjusting the Ba / Ti ratio of the calcined powder to a desired Ba / Ti ratio. Calculate the amount. Next, the Ba correction amount of barium hydroxide aqueous solution containing Ba element (Ba (OH) 2 · 8H
The 2 O) were mixed with the washed calcined powder to obtain a barium titanate powder by evaporating water only. In the second embodiment, water is used as the solvent, but the present invention is not limited to this. Further, a predetermined amount of barium carbonate (BaCO 3 ) powder may be directly mixed with the calcined powder.
【0045】つづいて、得られた洗浄・Ba補正済み1
段仮焼粉、2段仮焼粉に、有機溶媒、有機バインダー、
可塑剤等を添加してスラリーとした後、ドクターブレー
ド法により成形し、グリーンシートを得た。その後、実
施例1と同様に、積層素子を作製し、その室温抵抗、抵
抗変化幅を測定した。これらの結果を表2に示す。Subsequently, the obtained washed and Ba-corrected 1
Step calcined powder, 2 step calcined powder, organic solvent, organic binder,
After adding a plasticizer or the like to form a slurry, the slurry was formed by a doctor blade method to obtain a green sheet. Thereafter, similarly to Example 1, a laminated element was manufactured, and its room temperature resistance and resistance change width were measured. Table 2 shows the results.
【0046】[0046]
【表2】 [Table 2]
【0047】表2に示すように、1段仮焼粉に洗浄を施
した後にBa補正を行うことで、3/1000という広
いBa/Ti比の範囲(Ba補正後のBa/Ti比が
0.998〜1.000)で、所望の特性(本実施例1
と同様、室温抵抗値が0.2Ω以下、かつ、抵抗変化幅
が3.5桁以上とする)が得られている。さらに、2段
仮焼粉に洗浄を施した後にBa補正を行うことで、5/
1000という極めて広いBa/Ti比の範囲(Ba補
正後のBa/Ti比が0.998〜1.002)で、上
記特性が得られている。As shown in Table 2, after the first-stage calcined powder was washed and subjected to Ba correction, a wide range of Ba / Ti ratio of 3/1000 (Ba / Ti ratio after Ba correction was 0%) was obtained. .998 to 1.000) and desired characteristics (Example 1).
Similarly, the resistance value at room temperature is 0.2Ω or less and the resistance change width is 3.5 digits or more. Further, by performing Ba correction after washing the two-stage calcined powder, 5 /
The above characteristics are obtained in an extremely wide range of Ba / Ti ratio of 1000 (Ba / Ti ratio after Ba correction is 0.998 to 1.002).
【0048】以上のように、仮焼を複数回行うだけでも
効果がある(2段仮焼粉,3段仮焼粉)。また、多段仮
焼を行わなくても、すなわち1段仮焼で洗浄後にBa補
正を行うだけでも効果がある(洗浄済み1段仮焼粉)。
よって、多段仮焼と洗浄およびBa補正とは、特性が発
現するBa/Ti比の幅を広げることに対してそれぞれ
効果があることがわかる。そして、多段仮焼と洗浄およ
びBa補正とを組み合わせると、上記の効果がより増大
する(洗浄済み2段仮焼粉)。As described above, it is effective to perform calcination only a plurality of times (two-stage calcined powder, three-stage calcined powder). Further, even if the multi-stage calcination is not performed, that is, even if the Ba correction is performed after the cleaning in the single-stage calcination, there is an effect (the washed single-stage calcination powder).
Therefore, it can be understood that the multi-stage calcination, the cleaning, and the Ba correction are effective for increasing the range of the Ba / Ti ratio in which the characteristics are exhibited. When the multi-stage calcination is combined with the cleaning and the Ba correction, the above-described effect is further increased (the washed two-stage calcination powder).
【0049】[0049]
【発明の効果】本発明の磁器用原料粉末の製造方法は、
以上のように、少なくともバリウムおよびチタンを含む
原料粉末を混合して、混合粉末を得る混合工程と、上記
混合粉末を所定温度で仮焼した後、粉砕して、仮焼粉末
を得る第1の仮焼工程と、先の仮焼工程で得られた仮焼
粉末を所定温度で仮焼した後、粉砕して、仮焼粉末を得
る第2の仮焼工程とを含み、かつ、上記第2の仮焼工程
を1回以上行う方法である。The method for producing a raw material powder for porcelain according to the present invention comprises:
As described above, a mixing step of mixing raw material powders containing at least barium and titanium to obtain a mixed powder, and calcining the mixed powder at a predetermined temperature and then pulverizing the mixed powder to obtain a first calcined powder A calcining step, and a second calcining step of calcining the calcined powder obtained in the previous calcining step at a predetermined temperature and then pulverizing the calcined powder to obtain a calcined powder; Is performed one or more times.
【0050】本発明の磁器用原料粉末の製造方法は、以
上のように、さらに、上記仮焼粉末を洗浄する洗浄工程
と、上記洗浄工程の後に、バリウムを上記仮焼粉末に補
充する組成比補正工程と、を含む方法である。As described above, the method for producing a raw material powder for porcelain of the present invention further comprises a washing step of washing the calcined powder, and a composition ratio of replenishing barium to the calcined powder after the washing step. And a correcting step.
【0051】本発明の磁器用原料粉末の製造方法は、以
上のように、さらに、上記第2の仮焼工程を1回行う方
法である。The method for producing a raw material powder for porcelain of the present invention is a method in which the second calcination step is performed once, as described above.
【0052】また、本発明の磁器用原料粉末の製造方法
は、以上のように、少なくともバリウムおよびチタンを
含む原料粉末を混合して、混合粉末を得る混合工程と、
上記混合粉末を所定温度で仮焼した後、粉砕して、仮焼
粉末を得る仮焼工程と、を含む磁器用原料粉末の製造方
法であって、上記仮焼粉末を洗浄する洗浄工程と、上記
洗浄工程の後に、バリウムを上記仮焼粉末に補充する組
成比補正工程と、を含む方法である。Further, the method for producing a raw material powder for porcelain of the present invention comprises, as described above, a mixing step of mixing a raw material powder containing at least barium and titanium to obtain a mixed powder;
After calcining the mixed powder at a predetermined temperature, pulverizing, a calcining step of obtaining a calcined powder, and a method for producing a raw material powder for porcelain including a washing step of washing the calcined powder, And a composition ratio correcting step of replenishing the calcined powder with barium after the cleaning step.
【0053】また、本発明の磁器用原料粉末は、以上の
ように、上記の磁器用原料粉末の製造方法によって得ら
れる。The raw material powder for porcelain of the present invention can be obtained by the above-described method for producing raw material powder for porcelain as described above.
【0054】それゆえ、上記磁器用原料粉末の製造方法
で得られた原料粉末を用いれば、低抵抗で、極めて広い
抵抗変化幅を有するBa/Ti比を従来のものに比べ広
くとることのできる磁器が得られるという効果を奏す
る。Therefore, by using the raw material powder obtained by the above-described method for producing a raw material powder for porcelain, the Ba / Ti ratio having a low resistance and an extremely wide range of resistance change can be made wider than that of the conventional one. This has the effect that porcelain can be obtained.
【0055】また、本発明の磁器の製造方法は、以上の
ように、上記の磁器用原料粉末の製造方法によって得ら
れた磁器用原料粉末を主材料として、成形後、焼成する
方法である。The porcelain manufacturing method of the present invention is a method in which the porcelain raw material powder obtained by the above-described porcelain raw material powder manufacturing method is used as a main material and then molded and fired.
【0056】また、本発明の磁器は、以上のように、上
記の磁器の製造方法によって得られる。Further, the porcelain of the present invention is obtained by the above-described porcelain manufacturing method as described above.
【0057】それゆえ、上記の磁器用原料粉末の製造方
法によって得られた磁器用原料粉末を主材料として用い
れば、小型かつ低抵抗で、十分な抵抗変化幅を有し、さ
らには、幅広いBa/Ti比において特性を発現する積
層型半導体セラミック素子等に用いることができる磁器
が得られるという効果を奏する。Therefore, when the porcelain raw material powder obtained by the above-described method for producing a porcelain raw material powder is used as a main material, the porcelain raw material powder is small, has low resistance, has a sufficient resistance change width, and has a wide Ba There is an effect that a porcelain that can be used for a laminated semiconductor ceramic element or the like that exhibits characteristics in the / Ti ratio can be obtained.
【0058】また、本発明の積層セラミック電子部品の
製造方法は、以上のように、上記の磁器用原料粉末の製
造方法によって得られた磁器用原料粉末を主材料として
なるセラミック材料層と、導電性ペーストからなる内部
電極層とを所定層数積層して積層体を得る工程と、上記
積層体を還元雰囲気中で焼成した後、酸化雰囲気中で再
酸化処理を行って積層焼結体を得る工程と、上記積層焼
結体の表面に外部電極を形成する工程と、を含む方法で
ある。Further, as described above, the method for manufacturing a multilayer ceramic electronic component according to the present invention comprises a ceramic material layer mainly comprising the porcelain raw material powder obtained by the above-described method for manufacturing a porcelain raw material powder, and a conductive material. Obtaining a laminated body by laminating a predetermined number of internal electrode layers made of a conductive paste to obtain a laminated body, and firing the laminated body in a reducing atmosphere and then performing a re-oxidation treatment in an oxidizing atmosphere to obtain a laminated sintered body And a step of forming an external electrode on the surface of the laminated sintered body.
【0059】それゆえ、上記の磁器用原料粉末の製造方
法によって得られた磁器用原料粉末を主材料として用い
ることによって、小型かつ低抵抗で、十分な抵抗変化幅
を有し、さらには、幅広いBa/Ti比において特性を
発現する積層セラミック電子部品が得られるという効果
を奏する。Therefore, by using the raw material powder for porcelain obtained by the above-mentioned method for producing raw material for porcelain as a main material, it has a small size, low resistance, a sufficient resistance change width, and a wide range. This has the effect of obtaining a multilayer ceramic electronic component exhibiting characteristics at a Ba / Ti ratio.
Claims (8)
料粉末を混合して、混合粉末を得る混合工程と、 上記混合粉末を所定温度で仮焼した後、粉砕して、仮焼
粉末を得る第1の仮焼工程と、 先の仮焼工程で得られた仮焼粉末を所定温度で仮焼した
後、粉砕して、仮焼粉末を得る第2の仮焼工程とを含
み、 かつ、上記第2の仮焼工程を1回以上行うことを特徴と
する磁器用原料粉末の製造方法。1. A mixing step of mixing raw material powders containing at least barium and titanium to obtain a mixed powder, and calcining the mixed powder at a predetermined temperature and then pulverizing the mixed powder to obtain a first calcined powder. A calcining step, and a second calcining step of calcining the calcined powder obtained in the previous calcining step at a predetermined temperature, and then pulverizing the calcined powder to obtain a calcined powder. A calcination step of at least one time.
料粉末を混合して、混合粉末を得る混合工程と、上記混
合粉末を所定温度で仮焼した後、粉砕して、仮焼粉末を
得る仮焼工程と、を含む磁器用原料粉末の製造方法であ
って、 上記仮焼粉末を洗浄する洗浄工程と、 上記洗浄工程の後に、バリウムを上記仮焼粉末に補充す
る組成比補正工程と、を含むことを特徴とする磁器用原
料粉末の製造方法。2. A mixing step of mixing raw material powders containing at least barium and titanium to obtain a mixed powder, and a calcining step of calcining the mixed powder at a predetermined temperature and then pulverizing to obtain a calcined powder. A method for producing raw material powder for porcelain, comprising: a washing step of washing the calcined powder; and a composition ratio correcting step of replenishing barium to the calcined powder after the washing step. A method for producing raw material powder for porcelain.
る組成比補正工程と、をさらに含むことを特徴とする請
求項1に記載の磁器用原料粉末の製造方法。3. The method according to claim 1, further comprising: a washing step of washing the calcined powder; and a composition ratio correcting step of replenishing barium to the calcined powder after the washing step. Of producing raw material powder for porcelain.
とする請求項1または3に記載の磁器用原料粉末の製造
方法。4. The method for producing raw material powder for porcelain according to claim 1, wherein the second calcining step is performed once.
用原料粉末の製造方法によって得られた磁器用原料粉末
を主材料として、成形後、焼成することを特徴とする磁
器の製造方法。5. A porcelain porcelain characterized in that the porcelain raw material powder obtained by the method for producing a porcelain raw material powder according to any one of claims 1 to 4 is used as a main material, molded and then fired. Production method.
用原料粉末の製造方法によって得られた磁器用原料粉末
を主材料としてなるセラミック材料層と、導電性ペース
トからなる内部電極層とを所定層数積層して積層体を得
る工程と、 上記積層体を還元雰囲気中で焼成した後、酸化雰囲気中
で再酸化処理を行って積層焼結体を得る工程と、 上記積層焼結体の表面に外部電極を形成する工程と、を
含むことを特徴とする積層セラミック電子部品の製造方
法。6. A ceramic material layer composed mainly of a porcelain raw material powder obtained by the method for producing a porcelain raw material powder according to any one of claims 1 to 4, and an internal electrode composed of a conductive paste. Stacking a predetermined number of layers with each other to obtain a laminate, firing the laminate in a reducing atmosphere, and then performing a re-oxidation treatment in an oxidizing atmosphere to obtain a multilayer sintered body; Forming an external electrode on the surface of the united body.
用原料粉末の製造方法によって得られたことを特徴とす
る磁器用原料粉末。7. A raw material powder for porcelain, obtained by the method for producing a raw material powder for porcelain according to any one of claims 1 to 4.
得られたことを特徴とする磁器。8. A porcelain obtained by the method of manufacturing a porcelain according to claim 5.
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| JP2015038032A (en) * | 2014-09-30 | 2015-02-26 | 株式会社村田製作所 | Barium titanate-based ceramic powder and production method thereof |
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