JP2002269858A - Sputter mask, sputtering apparatus having the same, and method for manufacturing optical information recording medium using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputter mask for uniformly feeding a reactive gas into a sputtering chamber and uniformly containing a specific element in a thin film formed on a substrate to improve the media characteristics of an optical information recording medium. provide. SOLUTION: The present invention relates to a substrate 3 having an annular disk shape.
An inner peripheral mask 10 for positioning and covering the inner peripheral non-thin film forming portion 3a of the substrate 3 and an outer peripheral mask 20 for positioning and covering the outer peripheral non-thin film forming portion 3b of the substrate 3; In a sputter mask 4 for manufacturing an optical information recording medium by attaching target particles to a thin film forming portion, an inner peripheral mask 10 has a shaft portion 11 which abuts and penetrates the inner periphery of the substrate 3.
And an umbrella portion 12 connected to the shaft portion 11 and covering the inner peripheral non-thin film forming portion 3a. A gas introduction passage 30 is formed to penetrate the shaft portion 11 and the umbrella portion 12 and to feed gas to the thin film forming portion 3c side. This is a sputtering mask that has been used.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputter mask for forming a thin film forming portion by covering an inner peripheral non-thin film forming portion and an outer peripheral non-thin film forming portion of a substrate having an annular disk, and a sputtering apparatus having the same. The present invention relates to a method for manufacturing an optical information recording medium using the method.

[0002]

2. Description of the Related Art Conventionally, a sputtering apparatus of this type has a sputtering chamber sandwiched between a target and a substrate holder, and is evacuated to a sputtering chamber surrounded by a wall, and then filled with a sputtering gas. The generated ions collide with the target, and the ejected target particles adhere to the substrate to form a thin film.

As a sputtering gas, an argon gas is usually used, and is introduced into a sputtering chamber from an opening of a gas introduction passage provided in a wall surface or a gap between the target and the wall surface.

The vacuum exhaust of the sputtering chamber is generally performed from a vacuum exhaust port formed in a vacuum wall surrounding the entire outside of the sputtering chamber. Usually, the vacuum exhaust port is used for introducing a gas formed in the sputtering chamber. It is arranged at a position facing the opening position of the passage, with the sputter chamber space interposed therebetween.

In order to secure desired performance of a thin film formed on a substrate, that is, media characteristics such as a C / N ratio, an erasing ratio, and the number of repetitive overwrites of an optical information recording medium, a desired thin film is formed. In forming the thin film, a reactive gas element or molecule (hereinafter, referred to as a specific element) is mixed with various reactive gases in the atmosphere in addition to the sputtering gas.

[0006]

However, when a sputtering gas and various reactive gases are mixed in the sputtering chamber, the reactive gas is not uniformly fed due to the position of the gas introduction passage and the vacuum exhaust port. In addition, it has been very difficult to make the content of the specific element contained in the thin film uniform on the substrate.

[0007] Further, in some sputtering apparatuses used for producing an optical information recording medium, a thin film is formed on a plurality of substrates at once. In this case, not only one substrate but also a space between the substrates is used. It is necessary to make the specific elements contained in the thin film uniform, and the necessity of uniformly feeding the reactive gas into the sputtering chamber has been further increased.

Accordingly, the present invention provides a sputter mask for uniformly feeding a reactive gas into a sputtering chamber and uniformly containing a specific element in a thin film formed on a substrate to improve the media characteristics of an optical information recording medium. An object of the present invention is to provide a sputtering manufacturing apparatus having the same and a method for manufacturing an optical information recording medium using the same.

[0009]

In order to achieve the above object, an invention according to claim 1 includes an inner peripheral mask for positioning and covering an inner peripheral non-thin film forming portion of a substrate having an annular disk; A thin film forming portion is defined and exposed by an outer peripheral mask that positions and covers the portion, and a target mask is attached to the thin film forming portion to manufacture an optical information recording medium. A gas introduction path configured to include a shaft portion penetrating in contact with the periphery and an umbrella portion connected to the shaft portion and covering the inner peripheral non-thin film forming portion, and for sending gas to the thin film forming portion side through the shaft portion and the umbrella portion Are formed, and the sputtering mask is characterized by being formed.

According to the first aspect of the present invention, since the sputtering gas and the reactive gas are filled in the sputtering chamber through the gas introduction passage penetrating the inner peripheral mask near the thin film forming portion of each substrate, the vacuum exhaust port is provided. Even if there is an airflow discharged toward the substrate, the reactive gas is sent from the center position of the substrate toward the outer periphery of the substrate near the thin film forming portion, without being influenced by the airflow discharged from the vacuum exhaust port. The specific element is uniformly dispersed on the substrate, and the specific element is uniformly contained in the thin film, so that the media characteristics of the optical information recording medium can be improved.

According to a second aspect of the present invention, in the sputter mask according to the first aspect, the umbrella portion is formed with a particle-adhering portion to which target particles are not easily attached, and the opening of the gas introduction passage is formed with a particle-adhering portion. The sputter mask is characterized by being formed on the attachment portion.

According to the second aspect of the present invention, in addition to the effect of the first aspect, it is possible to avoid the adhesion of the target particles to the opening and the periphery of the gas introduction passage formed in the particle-adhering portion,
Sputter gas and reactive gas can be supplied stably for a long time,
It is possible to provide an optical information recording medium in which target particles are uniformly attached to the entire area of the thin film forming section.

According to a third aspect of the present invention, in the sputter mask according to the second aspect, at least one particle-adhering portion is formed as a vertical or inverse side surface of the umbrella portion. And

According to a third aspect of the present invention, in addition to the effect of the second aspect, since the side wall provided on the umbrella portion has an opening formed in the vertical or inverse particle landing portion, the target particle is formed in the opening of the gas introduction passage. Is difficult to adhere, and a predetermined amount of the specific element can be uniformly dispersed on the substrate without clogging the opening.

According to a fourth aspect of the present invention, in the sputter mask according to the second aspect, the particle resistant portion is formed as at least one concave portion that opens to the side of the umbrella portion. The sputtering mask is used.

According to a fourth aspect of the present invention, in addition to the effect of the second aspect, since the opening of the gas introduction path is covered with the recess and the target particles do not fall near the opening of the gas introduction path, the opening and the surrounding area are not covered. Almost no adhesion of target particles occurs.

The invention according to claim 5 is the invention according to claims 1 to 4
Having a sputter mask according to any of
A sputtering apparatus includes a substrate, and a target that covers the substrate to form a thin film.

According to the fifth aspect of the present invention, a thin film is formed in an atmosphere in which a reactive gas is uniformly distributed by using the sputtering mask according to any one of the first to fourth aspects in a sputtering apparatus. It is possible to provide a sputtering apparatus for manufacturing an optical information recording medium in which a specific element contained in the optical information recording medium is uniform and the media characteristics are improved.

According to a sixth aspect of the present invention, there is provided the sputter mask according to any one of the first to fourth aspects, using the sputter apparatus according to the fifth aspect, wherein the inner peripheral thin film non-forming portion and the outer peripheral non-formation portion on the substrate are formed. An optical information recording medium, wherein a thin film containing a reactive gas element is formed by uniformly introducing a reactive gas other than a sputtering gas from an inner peripheral mask into the thin film forming portion so as to cover the thin film forming portion. Manufacturing method.

According to the invention of claim 6, since the sputtering apparatus of claim 5 is used, the sputter mask of any one of claims 1 to 4 is used, and the media characteristics of the optical information recording medium are improved. Without covering the gas introduction path with the thin film, a thin film containing the specific element uniformly can be formed on the substrate for a long period of time, and the optical information recording medium can be mass-produced.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

In the sputtering apparatus of the present invention, as shown in FIG. The substrate 3 presenting a single annular disk has a sputter mask 4 that covers the inner peripheral non-thin film forming portion 3a and the outer peripheral non-thin film non-forming portion 3b, and defines and exposes the thin film forming portion 3c. I have.

The sputtering chamber 5 is surrounded by the substrate holder 2, a sputtering apparatus housing 1 around the substrate holder 2, a deposition-preventing plate 6, and a cathode plate 8 on which an upper target 7 is detachably mounted. 8 is formed so as to be freely opened and closed.

Here, the sputtering chamber 5 is evacuated by a vacuum exhaust port (not shown) formed on a vacuum wall (not shown) which covers the outside of the substrate holder 2, the deposition-preventing plate 6, and the cathode plate 8. Is exhausted from the gap between the deposition-preventing plate 6 and the cathode plate 8 to be in a vacuum state, and is filled with a mixed gas (hereinafter referred to as a process gas) 9 of a sputtering gas and a reactive gas. Here, the vacuum exhaust port is
It is formed on the side of the vacuum wall.

The substrate holder 2 has a concave portion 2a for positioning the shaft portion 11 of the inner peripheral mask 10 at the center of the upper surface for horizontally holding the substrate 3, and a gas introduction passage 40 communicating with a gas supply device (not shown) at the center. Is provided.

The substrate 3 has an annular disk shape and is made of synthetic resin or the like. The thin film forming portion sandwiched between the inner non-thin film forming portion 3a and the outer non-thin film forming portion 3b using a sputter mask 4. 3c is provided with various constituent layers such as a reflective layer, a recording layer, a protective layer, and a dielectric layer, thereby producing an optical information recording medium.

An inner peripheral mask 10 for positioning and covering the inner peripheral non-thin film forming portion 3a of the substrate 3;
Peripheral mask 2 for positioning and covering peripheral non-thin film forming portion 3b
0.

Although the description has been given of the case where the optical information recording medium is manufactured by installing one substrate 3, it is needless to say that the plurality of substrates may be installed at the same time.
In this case, the inner peripheral mask of the present invention is effective.

The target 7 is detachably mounted on the cathode plate 8 and is replaced as needed according to the type of thin film to be formed. For example, when forming a recording layer, Ag, In,
It is formed by mixing and sintering metal powders of Sb and Te.

Process gas 8 filled in sputtering chamber 4
Is supplied from a gas supply device below the substrate holder 2 through a gas introduction path 20 penetrating the inner peripheral mask 10, and the process gas 9 is changed depending on the type and composition of the thin film to be formed. Argon gas is used as a sputtering gas, and nitrogen is used as a reactive gas.

As shown in FIGS. 1 to 4, the inner peripheral mask 10 is in contact with the inner peripheral edge of the substrate 3, and passes through the shaft portion 11 for positioning. An umbrella portion 12 covers the inner peripheral non-thin film forming portion 3a on the surface facing the target 7.

Here, the inner peripheral non-thin film forming portion 3a is
This is a portion where the substrate 3 is left as it is without forming a thin film by attaching target particles near the upper inner peripheral portion.

The shaft portion 11 has a cylindrical shape having substantially the same diameter as the inner circumference of the substrate 3, is mounted in the recess 2 a of the substrate holder 2, and has such a length that it can be detachably and sufficiently fixed by means such as a built-in magnet. ,
Here, a gas introduction path 30 connected to a gas introduction path 40 formed in the substrate holder 2 is formed substantially at the center so as to extend in the axial direction.

The umbrella portion 12 extends from the upper end of the shaft portion 11 which abuts on the inner peripheral edge to position the substrate 3 and is formed in a disk shape extending in the radial direction. And the upper surface 12
b is formed to have the same area or a smaller area as the lower surface 12a so as not to hinder the descending path of the target particles.

The umbrella portion 12 is provided with a gas introduction passage 30 which is continuous with the gas introduction passage 30 formed in the shaft portion 11 and branches in four directions, and faces the opening 31 formed in the upper surface 12b. Through.

The opening 31 of the gas introduction passage 30 is provided at the particle landing portion A where the target particles formed on the umbrella portion 12 are difficult to adhere.
It is provided in.

In FIG. 1, the particle resistant portion A is formed by forming an end of the upper surface 12 b as a side wall 12 c extending vertically to the lower surface 12 a with respect to the substrate 3. The side wall 12c extends over the entire circumference of the upper surface 12b. Here, four openings 31 are formed in the particle adhesion portion A, and the shaft portion 1 is moved toward the opening 31.
1 continuously from the gas introduction path 30 formed at the approximate center of
A gas introduction passage 30 is formed radially through the inside of the umbrella portion 12 in the radial direction.

The side wall 12c, which is the particle adhesion portion A, extends vertically only around the opening 32 without extending over the entire circumference (see FIG. 2A). (See FIG. 2B).

In FIG. 3, the particle adhering portion A has a concave portion 12 d which is opened laterally on a side wall 12 c having the entire peripheral edge of the upper surface 12 b formed perpendicular to the substrate 3. It is formed.

In FIG. 3, the concave portion 1 which is
In the ceiling surface 12e of 2d, four openings 31 are formed in which the circumference is equally divided here at the periphery, and the opening 31 is continuously formed from the gas introduction passage 30 formed substantially at the center of the shaft portion 11, and A gas introduction passage 30 penetrating near the upper surface 12b is formed toward the opening 31.

In FIG. 4, the particle-adhered portion A is not formed over the entire circumference as shown in FIG. 3, but is formed on a part of the side wall 12c and is opened to the side, and the opening 31 is directed in the radial direction. Although formed on the side surface 12f, the particle difficult-to-adhere portion A does not extend all around, and the opening 31 may be formed on the ceiling surface 12e.

Further, in order to diffuse the process gas 9 to be introduced, it is preferable that the recess 12d, which is the particle-adhered portion A in FIGS.

As shown in FIGS. 1 and 3, the opening 31 is
Here, each of the umbrella portions 12 is formed at four locations in the radial direction, but at least one opening 31 may be formed in the umbrella portion 12.

The gas introduction path 40 is connected and extended from a gas supply device (not shown) below the substrate holder 2. Here, after penetrating the substrate holder 2, the inner peripheral mask 1
0 is connected to the gas introduction passage 30 formed in the shaft portion 11.

The gas introduction path 30 is formed continuously from the gas introduction path 40 penetrating the substrate holder 2, penetrating the shaft portion 11, and facing the opening 31 formed in the head portion 12.

The outer peripheral mask 20 covers the outer peripheral non-thin film forming portion 3b at the outer peripheral edge of the substrate 3, and is detachably fixed to the upper surface of the substrate holder 2 by a fixing means (not shown).

The outer peripheral non-thin film forming portion 3b covered by the outer peripheral mask 20 is a portion where the substrate 3 is left without forming a thin film by attaching target particles near the outer peripheral edge on the substrate 3. It is.

The operation of the sputtering apparatus will be described below.

Thin film forming part 3 on substrate 3 presenting an annular disk
In order to manufacture an optical information recording medium by forming a thin film on the substrate c and providing various constituent layers, the substrate 3 is placed on the substrate holder 2 inside the sputtering chamber 5 surrounded by the deposition preventing plate 6 and the cathode plate 8. Place. At this time, the target 7 and the cathode plate 8 move upward integrally,
The substrate chamber 2 is moved downward, and the sputtering chamber 5 is opened, so that the substrate 3 can be disposed.

The substrate 3 placed on the substrate holder 2
The inner circumference is positioned and fixed by the inner circumference mask 10, and the outer circumference is fixed to the outer circumference mask 20.

The inner peripheral mask 10 covers the inner peripheral non-thin film forming portion 3a, and the outer peripheral mask 20 covers the outer peripheral non-thin film forming portion 3b to define and expose the thin film forming portion 3c on the substrate 3.

After the placement of the substrate 3 is completed, the sputtering chamber 8 is hermetically sealed, air is evacuated from a vacuum exhaust port (not shown) to evacuate, and a process gas is supplied from a gas supply device (not shown) below the substrate holder 2. 9 (here, a mixed gas of argon gas and nitrogen) is supplied, passed through an opening 31 through a gas introduction path 40 and a gas introduction path 30, and filled in the sputtering chamber 8.

In the inner peripheral mask shown in FIGS. 1 to 4, the process gas 9 sent out to the four openings 31 formed in the directions perpendicular to the radiation directions here is used for the substrate 3. Since it is sent out from the inner peripheral side to the outer peripheral side in the vicinity of the thin film forming portion 3 c and is filled along the substrate 3, it is uniformly dispersed in the sputtering chamber 8, especially in the vicinity of the substrate 3.

Further, even if the openings 31 are not formed at the four positions in the radial direction, the process gas 9 is sent out from the inner peripheral side to the outer peripheral side along the substrate 3 and dispersed therein. The concentration of the reactive gas becomes uniform.

After the sputtering chamber 8 is filled with the process gas 9, a vacuum discharge is performed in the sputtering chamber 8 to ion-decompose the argon gas contained in the process gas 9 in this case to generate argon ions. (Hereinafter, referred to as “sputtering”), thereby causing the target particles protruding from the target 7 to adhere to form a thin film.

When the target particles adhere, they are combined with the reactive gas in the process gas 9, in this case, nitrogen, so that the element or molecule of the reactive gas (hereinafter, specific element) is contained in the formed thin film. Since the process gas 9 containing the reactive gas is uniformly filled on the substrate 3, the specific elements contained in the thin film are also uniform.

The sputtered target particles fall vertically toward the substrate 3.
Inner peripheral non-thin film forming portion 3a, outer peripheral thin film non-forming portion 3b of substrate 3
Mask 4 and the exposed thin film forming portion 3c
And adhere to.

As a result, a thin film is formed only on the thin film forming portion 3c of the substrate 3, which serves as an optical information recording medium. Since the specific element is contained in the thin film, the media characteristics can be improved.

On the other hand, target particles also adhere to the sputter mask 4, but in the case of the inner peripheral mask 10 shown in FIGS. 1 and 2A, the target particles adhere to the upper surface 12b and Since the particle resistant portion A in which the opening 31 is formed is formed perpendicular to the substrate 3, target particles falling vertically hardly adhere to the substrate 3, and the opening 31
Process gas 9 can be sent out without being blocked.

In the case of the inner peripheral mask 10 shown in FIG. 2 (b), the particle landing portion A is inversed inside the umbrella portion 12, so that the umbrella portion 1 on which the target particles are inversed.
2, it is difficult for the target particles to adhere to the vicinity of the opening 31 of the gas introduction path 30 formed therein, and the process gas 9 can be sent out without closing the opening 31.

In the case of the inner peripheral mask 10 shown in FIG. 3 and FIG. 4, since the particle resistant portion A is formed as a concave portion 12d formed on the side wall 12c of the umbrella portion 12, the target particle is not concave. 12d and the ceiling panel 1
It is almost impossible to form a thin film in the vicinity of the opening 31 formed in 2e or the side surface 12f. The recess 12d is formed over the entire circumference of the upper surface 12b (see FIG.
c (see FIG. 4).

The inner peripheral mask shown in FIG.
The uppermost portion where the second upper surface 12b is formed is not integrally formed with the shaft portion 11, but is molded and welded to be integrated with each other.

In some cases, a plurality of substrate holders 2 are arranged on the sputtering apparatus housing 1. A process gas 9 filled in a sputtering chamber 8 provided around each substrate holder 2 is provided. Evenly distributed on the substrate 3, the substrate 3
The content of the specific element contained in the thin film formed on the substrate holder 2 is also uniform in each substrate holder 2.

The upper surface 12b of the umbrella portion 12 is connected to the lower surface 1
Since it is formed smaller than 2a, it does not hinder the descending path of the target particles, and the target particles adhere to the end of the thin film forming portion 3c.

[0065]

Example 1 In Example 1, a thin film having the following layer structure was formed on a substrate using the inner peripheral mask shown in FIG. 1 to produce a phase-change optical media disk.

(1) First Dielectric Layer ZnS / SiO ₂ (2) Recording Layer AgInSbTe (3) Second Dielectric Layer ZnS / SiO ₂ (4) Metal Reflective Layer Al—Ti Process gas in sputtering of all layers Argon gas is used, and it is introduced through the opening through a gas introduction path formed in the inner peripheral mask, and used only when the recording layer is formed. Introduced.

For comparison, as a comparative example 1 of the prior art, a similar phase-change media disk was manufactured by using a sputtering apparatus in which an opening of a gas introduction passage was provided between a deposition-preventing plate and a cathode plate. went. In addition, the vacuum exhaust port was formed on the side of the vacuum wall provided outside the deposition-preventing plate.

[0068]

Second Embodiment In the second embodiment, the same phase change media as in the first embodiment is used on a substrate by using the inner peripheral mask shown in FIG. A disc was prepared. The method of introducing gas into the inner peripheral mask was the same as in Example 1.

[0069]

Example 3 In Example 3, a phase change media disk similar to that of Example 1 was produced on a substrate using the inner peripheral mask shown in FIG. The method of introducing gas into the inner peripheral mask was the same as in Example 1.

[0070]

Fourth Embodiment In a fourth embodiment, the inner peripheral mask shown in FIG. 3 is used to form an example on a substrate by using a sputtering apparatus of a type in which a single film is formed on three substrates. The same phase change media disk as in Example 1 was produced. The three substrates are arranged on a single sputtering apparatus housing so as to be located at approximately the vertices of an equilateral triangle, and their positions are defined as “upper”, “lower left”, and “lower right”. The method of introducing gas into the inner peripheral mask was the same as in Example 1.

For comparison, as Comparative Example 2 of the prior art, an opening of the gas introduction passage was provided between the deposition-preventing plate and the cathode plate as in Comparative Example 1 in the same substrate arrangement state as in Example 4. The same phase change media disk was prototyped using the provided sputtering apparatus.

At this time, the opening of the gas introduction path was provided on the side of the substrate arranged “upper”, and the vacuum exhaust port was formed at a position facing the gas introduction path opening of the vacuum wall covering the sputtering apparatus housing.

[0073]

[Result 1] Table 1 shows the results of judging the quality of the media in Examples 1 to 3 and Comparative Example 1.

[Table 1]

In Comparative Example 1 using the prior art, the media characteristics deviated from the standard at the outer peripheral portion of the substrate, and some characteristics deviated from the standard at the inner peripheral portion closer to the inner periphery. The result was that the standard was satisfied only at the inner peripheral portion of 30 mm, and the medium was totally out of the standard. Since the film formation area in the inner peripheral portion was in a narrow range, the variation in the nitrogen content distribution in the recording layer was small, so that the media characteristics were within the standard. Because of the wide range, the dispersion of the nitrogen content distribution in the recording layer became large, and the media characteristics were out of the standard.

On the other hand, in Examples 1 to 3,
In all areas from the inner circumference to the outer circumference, the media characteristics satisfied the standard.

[0076]

[Result 2] Table 2 shows the results of judging the quality of the media in Example 4 and Comparative Example 2.

[Table 2]

In Comparative Example 2 using the prior art, a difference in media characteristics depending on the positions where the three substrates were arranged was observed. Comparative Example 1 was applied to the substrate arranged “upper” closest to the opening of the gas introduction path on the sputtering device housing.
In the same manner as in the above, the media characteristics satisfied the standard only in the inner peripheral portion, and the media characteristics largely deviated from the standard in the middle and outer peripheral portions. In the case of the substrates arranged in the “lower left” and “lower right”, the results were out of the standard in all regions from the inner peripheral portion to the outer peripheral portion.
After a detailed study and evaluation of these results,
In "lower left" and "lower right", it was confirmed that the nitrogen content in the recording layer was much lower than the desired content.

On the other hand, in the fourth embodiment, the media characteristics of all the substrates arranged in the “upper”, “lower left”, and “lower right” and all the regions from the inner peripheral portion to the outer peripheral portion conform to the standard. The result was satisfactory.

[0079]

As described above, according to the first aspect of the present invention, since the gas introduction passage is formed in the inner peripheral mask covering the inner peripheral non-thin film forming portion, the gas introduction passage is formed along the substrate near the thin film forming portion. The process gas is dispersed and the reactive gas can be uniformly introduced into the sputtering chamber, and combined with the target particles falling from above, the specific elements contained in the thin film formed on the substrate become uniform. The media characteristics of the optical information recording medium are improved.

Accordingly, it is possible to provide a sputter mask which improves the media characteristics of an optical information recording medium by uniformly feeding a reactive gas into a sputtering chamber and uniformly containing a specific element in a thin film formed on a substrate. it can.

According to the invention of claim 2, claim 1 is
In addition to the above effect, a particle-adhering portion is formed in the umbrella portion, and the target particle does not adhere to the vicinity of the opening of the gas introduction path formed therein, so that the opening is difficult to be closed and the optical information recording medium is Can be mass-produced.

According to the invention of claim 3, claim 2
In addition to the effect of the above, the particle-adhered portion is vertical to the substrate,
Target particles falling vertically are less likely to adhere.

According to the fourth aspect of the present invention, the second aspect is provided.
In addition to the effect of the third aspect, in addition to the effect of 3, the particle resistant portion is inside the concave portion provided on the side surface of the umbrella portion, and it is difficult for the target particles to enter the concave portion and adhere to the concave portion. When the opening is directed downward, it is more difficult to attach the target particles, and the opening is hardly closed.

According to the invention of claim 5, claim 1 is
The reactive gas is introduced uniformly while covering the non-film-forming portion by using the sputtering mask according to any one of (1) to (4), and the uniformity of the specific element contained in the formed thin film is improved. A secured sputtering apparatus can be provided.

According to the invention of claim 6, claim 5
Since the optical information recording medium is formed by the sputtering device described in the above, while the optical information recording medium containing the specific element contained in the thin film is uniform, the gas introduction path can be produced for a long time without being blocked, A thin film can be formed on a plurality of substrates at a time, and an optical information recording medium with improved media characteristics can be mass-produced.

[Brief description of the drawings]

FIG. 1 is a cutaway perspective view of one embodiment of an inner peripheral mask according to the present invention.

FIG. 2 (a) is an enlarged perspective view of a main part of an embodiment of an inner peripheral mask according to the present invention. (B) It is an important section enlarged perspective view of one example of an inner circumference mask concerning the present invention.

FIG. 3 is a cutaway perspective view of an embodiment of the inner peripheral mask according to the present invention.

FIG. 4 is an enlarged perspective view of a main part of one embodiment of the inner peripheral mask according to the present invention.

FIG. 5 is a sectional view of a sputtering apparatus according to the present invention.

[Table 1] Judgment results of media characteristics regarding Examples 1 to 3 and Comparative Example 1

Table 2 Judgment result of media characteristics of Example 4 and Comparative Example 2

[Explanation of symbols]

 Reference Signs List 3 Substrate 3a Inner peripheral non-thin film forming part 3b Outer peripheral non-thin film forming part 3c Thin film forming part 4 Sputter mask 10 Inner peripheral mask 11 Shaft part 12 Head part 12a Upper surface 12b Lower surface 12c Side surface 20 Peripheral mask 30 Gas introduction passage 31 Opening

Claims (6)

[Claims] A thin film forming portion is defined by an inner peripheral mask for positioning and covering an inner peripheral non-thin film forming portion of a substrate having an annular disk, and an outer peripheral mask for positioning and covering an outer non-thin film forming portion of the substrate. In the sputter mask for producing an optical information recording medium by attaching target particles to the thin film forming portion, the inner peripheral mask, the shaft portion that abuts the inner periphery of the substrate and penetrates, And an umbrella portion that is continuous with the portion and covers the inner peripheral non-thin film forming portion, and a gas introduction passage that feeds gas to the thin film forming portion side through the shaft portion and the umbrella portion is formed. Sputter mask. 2. The method according to claim 1, wherein the head portion has a particle landing portion to which target particles are not easily attached, and an opening of the gas introduction passage is formed in the particle landing portion. Characteristic sputter mask. 3. The sputter mask according to claim 2, wherein the particle-adhering portion is formed at least at one side as a vertical or inverse side surface of the umbrella portion. 4. The sputter mask according to claim 2, wherein the particle resistant portion is formed as at least one concave portion opened to the side of the umbrella portion. 5. A sputtering apparatus comprising the sputtering mask according to claim 1, further comprising a target for arranging the substrate and covering the substrate to form a thin film. 6. The method according to claim 5, wherein
The sputter mask according to claim 1, wherein the reactive gas other than the sputter gas is introduced into the thin film forming portion by covering the inner peripheral thin film non-forming portion and the outer peripheral non-thin film forming portion on the substrate. A method for manufacturing an optical information recording medium, wherein the thin film containing the reactive gas element is formed by uniformly introducing the reactive gas from a peripheral mask.