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JP2002263548A - Film forming apparatus and film forming method - Google Patents

Film forming apparatus and film forming method

Info

Publication number
JP2002263548A
JP2002263548A JP2001068017A JP2001068017A JP2002263548A JP 2002263548 A JP2002263548 A JP 2002263548A JP 2001068017 A JP2001068017 A JP 2001068017A JP 2001068017 A JP2001068017 A JP 2001068017A JP 2002263548 A JP2002263548 A JP 2002263548A
Authority
JP
Japan
Prior art keywords
reduced
processing
substrate
pressure
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001068017A
Other languages
Japanese (ja)
Inventor
Kazunobu Yamaguchi
和伸 山口
Hirotsugu Kumazawa
博嗣 熊澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2001068017A priority Critical patent/JP2002263548A/en
Priority to TW091104292A priority patent/TW559573B/en
Priority to KR1020020013126A priority patent/KR20020072802A/en
Publication of JP2002263548A publication Critical patent/JP2002263548A/en
Pending legal-status Critical Current

Links

Classifications

    • H10P72/0448
    • H10P14/6342

Landscapes

  • Coating Apparatus (AREA)
  • Drying Of Solid Materials (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Materials For Photolithography (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a coating forming apparatus capable of shortening the cycle time of a coating forming line without requiring a robot or the like required to be capable of performing complicated movements. SOLUTION: The coating forming apparatus comprises a coating apparatus, a rotating apparatus, a first vacuum drying apparatus, a second vacuum drying apparatus, a washing apparatus and a heating apparatus arranged in this order from the upstream side to the downstream side along a transportation line of a substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はガラス基板や半導体
ウェーハなどの基板表面に被膜を形成する装置とこの装
置を用いた被膜形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a film on the surface of a substrate such as a glass substrate or a semiconductor wafer and a method for forming a film using the apparatus.

【0002】[0002]

【従来の技術】基板表面にレジスト膜や絶縁(SOG)
膜を形成する装置として、特開平3−101866号公
報に開示される装置を本発明者らは提案している。この
被膜形成装置は、基板の搬送ラインの上流側に塗布装置
を、この塗布装置の下流側に塗布液を生乾き状態まで乾
燥させる減圧乾燥装置を、この減圧乾燥装置の下流側に
基板の裏面に廻り込んだ塗布液を除去する裏面洗浄装置
を、更にこの裏面洗浄装置の下流側に塗膜を完全に乾燥
させる加熱乾燥装置を配置したものである。
2. Description of the Related Art A resist film or insulation (SOG) is formed on a substrate surface.
The present inventors have proposed an apparatus disclosed in JP-A-3-101866 as an apparatus for forming a film. This film forming apparatus includes a coating device upstream of a substrate transport line, a reduced-pressure drying device downstream of the coating device for drying a coating liquid to a dry state, and a downstream side of the reduced-pressure drying device on the back surface of the substrate. A back surface cleaning device for removing the coating solution that has flowed in, and a heating and drying device for completely drying the coating film are disposed downstream of the back surface cleaning device.

【0003】[0003]

【発明が解決しようとする課題】一般的に搬送ラインに
沿って各種処理装置を配置し、基板などの被処理物に処
理を施す場合、被処理物が搬送ラインから搬出されるタ
クトタイムは上記各処理のうち最も長い処理時間に律さ
れる。上記の被膜形成装置にあって処理時間が最も長く
かかるのは、減圧乾燥装置である。そこで、減圧乾燥処
理時間を短くすれば全体の処理効率が向上する。このた
めに考えられる手段は、2台の減圧乾燥装置を搬送ライ
ンに沿って並列または直列に配置し、これら2台の減圧
乾燥装置に交互に基板を投入する方法である。
In general, when various processing apparatuses are arranged along a transfer line to perform processing on a processing object such as a substrate, the tact time when the processing object is unloaded from the transfer line is as described above. It is determined by the longest processing time of each processing. The longest processing time in the above-mentioned film forming apparatus is a vacuum drying apparatus. Therefore, shortening the reduced-pressure drying processing time improves the overall processing efficiency. A possible means for this is a method of arranging two reduced-pressure drying apparatuses in parallel or in series along a transport line, and alternately loading substrates into these two reduced-pressure drying apparatuses.

【0004】2台の減圧乾燥装置を搬送ラインに沿って
並列に配置した例を図3に、また減圧乾燥時間と圧力の
関係を図4に示す。図3及び図4に示すように特開平3
−101866号公報から容易に考えつく被膜形成装置
は、搬送ラインの上流側に塗布装置を設け、この塗布装
置の下流側に塗布液を均一に拡散させるための回転処理
装置を設け、この回転処理装置の下流側に2台の減圧乾
燥装置を搬送ラインに沿って並列に配置するとともにア
ームを備えたロボットにて回転処理装置からの基板を交
互に2台の減圧乾燥装置に振り分けるようにしたもので
ある。即ち、1枚目の基板については第1の減圧乾燥装
置(VD)に送り込み、2枚目の基板については約4
5秒後に第2の減圧乾燥装置(VD)に送り込むこと
で、下流側の加熱装置に送り出されるタクトタイムが従
来の半分の約45秒になるようにしている。
FIG. 3 shows an example in which two vacuum drying apparatuses are arranged in parallel along a transport line, and FIG. 4 shows the relationship between the vacuum drying time and the pressure. As shown in FIG. 3 and FIG.
Japanese Patent Application Laid-Open No. 101866 discloses a film forming apparatus which can be easily conceived. The coating apparatus is provided on the upstream side of a transport line, and the rotation processing apparatus for uniformly diffusing the coating liquid is provided on the downstream side of the coating apparatus. The two vacuum drying devices are arranged in parallel along the transport line on the downstream side of the machine, and the substrate from the rotary processing device is alternately distributed to the two vacuum drying devices by a robot equipped with an arm. is there. That is, the first substrate is sent to the first vacuum drying device (VD), and about 4
After 5 seconds, it is fed to the second vacuum drying device (VD) so that the takt time sent to the downstream heating device is about 45 seconds, which is half of the conventional one.

【0005】しかしながら、上記の被膜形成装置にあっ
ては、回転処理装置からの基板を交互に2台の減圧乾燥
装置に振り分けるロボットが必要となり、装置全体が大
掛かりになる。そして更に問題となるのは、2台の減圧
乾燥装置の処理条件を厳密に一致させることは困難で、
基板を全く同一条件で減圧処理することができない。そ
の結果、乾燥状態の異なる基板が交互に下流側に送り出
されることなり、下流側での処理に支障をきたす。
However, in the above-mentioned film forming apparatus, a robot for alternately distributing the substrate from the rotary processing apparatus to two reduced-pressure drying apparatuses is required, and the entire apparatus becomes large. What is more problematic is that it is difficult to exactly match the processing conditions of the two vacuum drying apparatuses,
The substrate cannot be decompressed under exactly the same conditions. As a result, substrates in different dry states are alternately sent to the downstream side, which hinders processing on the downstream side.

【0006】2台の減圧乾燥装置を単純に直列に配置し
た場合にも上記と同様の問題が生じる。即ち、上流側の
減圧乾燥装置を飛び越えて下流側の減圧乾燥装置に基板
を送り込んだり、下流側の減圧乾燥装置を飛び越えて加
熱乾燥装置に基板を送り込むための搬送装置が別途必要
となり、並列に配置した場合と同様に装置が大掛かりと
なる。また、並列に配置した場合と同様に、上流側と下
流側の減圧乾燥装置の処理条件を厳密に一致させること
は困難なため、基板を全く同一条件で減圧処理すること
ができないという問題も生じる。
The same problem as described above occurs when two vacuum drying apparatuses are simply arranged in series. In other words, a transport device for jumping over the upstream vacuum drying device and sending the substrate to the downstream vacuum drying device, or jumping over the downstream vacuum drying device and sending the substrate to the heating drying device is separately required, and in parallel. The device becomes large as in the case of the arrangement. Further, similarly to the case where the substrates are arranged in parallel, it is difficult to strictly match the processing conditions of the upstream and downstream vacuum drying apparatuses, so that there is also a problem that the substrates cannot be subjected to vacuum processing under exactly the same conditions. .

【0007】[0007]

【課題を解決するための手段】上記課題を解決すべく本
発明に係る被膜形成装置は、基板を上流側から下流側へ
搬送するライン上に塗布ステーションを設け、この塗布
ステーションよりも下流側のライン上に減圧乾燥ステー
ションを配置した被膜形成装置において、前記減圧乾燥
ステーションに、複数の減圧乾燥装置をライン上に直列
に配置し、下流側の減圧乾燥装置は上流側での減圧乾燥
処理が終了した基板を受けて処理を継続すべく、複数の
減圧乾燥装置はそれぞれ独立して処理条件を設定し得る
ものとした。
In order to solve the above-mentioned problems, a film forming apparatus according to the present invention is provided with a coating station on a line for transporting a substrate from an upstream side to a downstream side, and a coating station downstream of the coating station. In the film forming apparatus having a reduced-pressure drying station disposed on the line, a plurality of reduced-pressure drying devices are disposed in series on the line at the reduced-pressure drying station, and the reduced-pressure drying device on the downstream side completes the reduced-pressure drying process on the upstream side. The plurality of reduced-pressure drying apparatuses can independently set processing conditions in order to continue processing after receiving the substrate.

【0008】前記塗布ステーションに配置する塗布装置
としては、回転カップ式の塗布装置、オープンカップ式
の塗布装置あるいはスリットコータなどを用いることが
でき、塗布後の膜厚を均一にするため、塗布装置の下流
側に回転処理装置を配置してもよい。
As a coating device disposed in the coating station, a rotating cup type coating device, an open cup type coating device, a slit coater, or the like can be used. May be arranged downstream of the rotary processing device.

【0009】また、減圧乾燥装置としては吸引装置につ
ながる気密な容器に基板出し入れ用の開口を設け、受け
渡しアームによって基板の出し入れを行う構造が考えら
れ、開口部にロードロック室を設けることも可能であ
る。上流側の減圧乾燥装置と下流側の減圧乾燥装置の減
圧状態はそれぞれ任意に設定することができ、上流側の
減圧乾燥装置と下流側の減圧乾燥装置の減圧状態を等し
くしてもよいし、いずれか一方を他方よりも低く設定し
てもよい。乾燥効率を高めるには、下流側の減圧乾燥装
置の減圧状態を上流側の減圧乾燥装置の減圧状態よりも
圧力を低く設定することが好ましい。
Further, as a reduced-pressure drying device, a structure is conceivable in which an opening for taking in and out a substrate is provided in an airtight container connected to a suction device, and a substrate is taken in and out by a transfer arm. A load lock chamber may be provided in the opening. It is. The reduced pressure state of the reduced pressure drying device on the upstream side and the reduced pressure drying device on the downstream side can be arbitrarily set, and the reduced pressure condition of the reduced pressure drying device on the upstream side and the reduced pressure drying device on the downstream side may be equal, Either one may be set lower than the other. In order to increase the drying efficiency, it is preferable to set the pressure of the reduced-pressure drying device on the downstream side to be lower than that of the reduced-pressure drying device on the upstream side.

【0010】更に、減圧乾燥ステーションの下流側に
は、基板端縁若しくは裏面に付着した余分な塗布液を除
去する洗浄装置を設けるか、洗浄装置を設けることなく
直ちに加熱乾燥装置を配置してもよい。
Further, a cleaning device for removing excess coating liquid adhering to the edge or the back surface of the substrate may be provided on the downstream side of the reduced-pressure drying station, or a heating and drying device may be provided immediately without providing a cleaning device. Good.

【0011】また、本発明に係る被膜形成方法は、上記
した被膜形成装置を用いた被膜形成方法であって、先
ず、タクトタイムは塗布ステーションにおける処理時間
に律せられるものとし、また減圧乾燥ステーションを構
成する各減圧乾燥装置での処理時間は前記タクトタイム
から各減圧乾燥装置での大気開放時間と搬送時間とを減
じた時間とした。このような構成とすることで、各減圧
乾燥装置において、タクトタイム内で無駄なく減圧乾燥
を行うことができる。
Further, a film forming method according to the present invention is a method for forming a film using the above-described film forming apparatus. The processing time in each of the reduced-pressure dryers is the time obtained by subtracting the open-to-atmosphere time and the transport time in each of the reduced-pressure dryers from the tact time. With such a configuration, in each of the reduced-pressure drying apparatuses, the reduced-pressure drying can be performed without waste within the takt time.

【0012】減圧乾燥の場合には上流側である程度乾燥
していれば下流側で引き続いて処理を継続できる。そし
て本発明の場合には必ず2台の減圧乾燥装置を通過する
ので、全ての基板に同一条件の処理が施される。
In the case of drying under reduced pressure, the processing can be continued on the downstream side if the drying is performed to some extent on the upstream side. In the case of the present invention, since all the substrates pass through two reduced-pressure drying devices, the same conditions are applied to all substrates.

【0013】[0013]

【発明の実施の形態】以下に本発明の実施の形態を添付
図面に基づいて説明する。図1(a)〜(e)は本発明
に係る被膜形成装置と被膜形成方法を経時的に説明した
図、図2は本発明による減圧乾燥時間と圧力の関係を示
すグラフである。
Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 (a) to 1 (e) are diagrams illustrating a film forming apparatus and a film forming method according to the present invention over time, and FIG. 2 is a graph showing a relationship between a reduced-pressure drying time and a pressure according to the present invention.

【0014】本発明に係る被膜形成装置は、基板の搬送
ラインに沿って上流側から下流側に向けて順に、塗布装
置、回転処理装置、第1の減圧乾燥装置(VD)、第
2の減圧乾燥装置(VD)、洗浄装置および/または
加熱乾燥装置を配置している。
[0014] The film forming apparatus according to the present invention comprises, in order from the upstream side to the downstream side along the substrate transfer line, a coating apparatus, a rotation processing apparatus, a first reduced-pressure drying apparatus (VD), and a second reduced-pressure drying apparatus. A drying device (VD), a washing device and / or a heating and drying device are arranged.

【0015】次に処理手順について説明すると、先ず図
1(a)に示すように、塗布装置で1枚目の基板に塗布
液を塗布し、回転処理装置へ搬入する。この回転処理装
置までの搬送時間を含めて塗布処理に要する時間は60
秒間である。
Next, the processing procedure will be described. First, as shown in FIG. 1 (a), a coating liquid is applied to a first substrate by a coating apparatus and is carried into a rotation processing apparatus. The time required for the coating process including the transport time to the rotation processing device is 60
Seconds.

【0016】この後、図1(b)に示すように、1枚目
の基板が回転処理装置に搬入する間に2枚目の基板を塗
布装置に搬入する。ここで、回転処理装置において処理
に必要な時間は第1の減圧乾燥装置への搬送時間を含め
60秒以下であるが、塗布装置での処理に60秒必要と
なるので、処理開始から120秒間は図1(b)に示す
状態となっている。
Thereafter, as shown in FIG. 1B, while the first substrate is being carried into the rotation processing device, the second substrate is carried into the coating device. Here, the time required for the processing in the rotary processing apparatus is 60 seconds or less including the time for transport to the first reduced-pressure drying apparatus, but the processing in the coating apparatus requires 60 seconds, so 120 seconds from the start of the processing. Is in the state shown in FIG.

【0017】次いで、図1(c)に示すように、1枚目
の基板を第1の減圧乾燥装置に搬入し、2枚目の基板を
回転処理装置に搬入し、3枚目の基板を塗布装置に搬入
する。そして、図2に示すように、第1の減圧乾燥装置
(VD)において33.5秒かけて1.0Torr(約13
3.32Pa)まで減圧する。この後、4秒かけて大気圧
まで戻し、更に20秒かけて第2の減圧乾燥装置まで搬
送する。この第2の減圧乾燥装置(VD)までの搬送
時間まで含めて第1の減圧乾燥装置での処理時間とする
と、第1の減圧乾燥装置における処理時間は57.5秒
ということになる。そして、前記塗布装置での処理に要
する時間が60秒であるので、被膜形成装置全体として
のタクトタイムは塗布装置に律せられる。したがって、
処理開始から180秒後に1枚目の基板の第1の減圧乾
燥装置での処理が終了する。
Next, as shown in FIG. 1 (c), the first substrate is loaded into the first vacuum drying device, the second substrate is loaded into the rotation processing device, and the third substrate is loaded. Carry in the coating device. Then, as shown in FIG. 2, 1.0 Torr (about 13 Torr) was taken for 33.5 seconds in the first vacuum drying apparatus (VD).
The pressure is reduced to 3.32 Pa). Thereafter, the pressure is returned to the atmospheric pressure in 4 seconds, and then transported to the second reduced-pressure drying device in 20 seconds. Assuming that the processing time in the first reduced-pressure drying apparatus includes the transfer time to the second reduced-pressure drying apparatus (VD), the processing time in the first reduced-pressure drying apparatus is 57.5 seconds. Since the time required for the processing in the coating device is 60 seconds, the tact time of the entire film forming device is determined by the coating device. Therefore,
180 seconds after the start of the processing, the processing of the first substrate in the first reduced-pressure drying apparatus is completed.

【0018】ここで、従来例から容易に考えつくものと
して図3及び図4に示した装置では、減圧乾燥ステーシ
ョンで要する時間は基板1枚当たり45秒であった。し
かしながら、減圧乾燥ステーションで要する時間につい
ては塗布装置での処理に要する時間(60秒)以下であ
れば、塗布装置での処理時間に被膜形成装置全体のタク
トタイムは律せられるのでこれ以上いくら短縮しても意
味はない。
Here, in the apparatus shown in FIGS. 3 and 4 as easily conceivable from the conventional example, the time required for the reduced-pressure drying station was 45 seconds per substrate. However, if the time required for the vacuum drying station is less than the time required for processing in the coating apparatus (60 seconds), the takt time of the entire film forming apparatus is limited by the processing time in the coating apparatus. It doesn't make sense.

【0019】次いで、図1(d)に示すように、1枚目
の基板を第2の減圧乾燥装置に搬入し、2枚目の基板を
第1の減圧乾燥装置に搬入し、3枚目の基板を回転処理
装置に搬入し、4枚目の基板を塗布装置に搬入する。
Next, as shown in FIG. 1 (d), the first substrate is carried into the second vacuum drying device, the second substrate is carried into the first vacuum drying device, and the third substrate is carried out. Is carried into the rotation processing apparatus, and the fourth substrate is carried into the coating apparatus.

【0020】そして、図2に示すように、1枚目の基板
に対し、第2の減圧乾燥装置において1秒かけて1.0T
orr(約133.32Pa)まで減圧し、更に32.5秒か
けて0.5Torr(約66.66Pa)まで減圧する。この
後、5秒かけて大気圧まで戻し、更に20秒かけて洗浄
装置まで搬送する。この洗浄装置までの搬送時間まで含
めて第2の減圧乾燥装置での処理時間とすると、第2の
減圧乾燥装置における処理時間は58.5秒ということ
になるが、前記同様、塗布装置での処理に要する時間が
60秒であるので、被膜形成装置全体としてのタクトタ
イムは塗布装置に律せられる。
Then, as shown in FIG. 2, the first substrate is subjected to 1.0T for 1 second in a second vacuum drying apparatus.
The pressure is reduced to orr (about 133.32 Pa) and further reduced to 0.5 Torr (about 66.66 Pa) over 32.5 seconds. Thereafter, the pressure is returned to the atmospheric pressure in 5 seconds, and then transported to the cleaning device in 20 seconds. Assuming that the processing time in the second reduced-pressure drying apparatus includes the transfer time to the cleaning apparatus, the processing time in the second reduced-pressure drying apparatus is 58.5 seconds. Since the time required for the treatment is 60 seconds, the tact time of the entire film forming apparatus is determined by the coating apparatus.

【0021】なお、塗布装置での処理に要する時間は6
0秒と、第1の減圧乾燥装置における処理時間57.5
秒との差2.5秒、および第2の減圧乾燥装置における
処理時間58.5秒との差1.5秒については各減圧乾燥
装置内での処理方法における待機時間として、塗布装置
に要する60秒と合わせるようにセットするのが好まし
い。したがって、処理開始から240秒後に1枚目の基
板の第2の減圧乾燥装置での処理が終了する。
The time required for processing in the coating apparatus is 6 times.
0 seconds and a processing time of 57.5 in the first vacuum drying apparatus.
The difference of 2.5 seconds from the second and the difference of 1.5 seconds from the processing time of 58.5 seconds in the second reduced-pressure drying apparatus are required for the coating apparatus as standby time in the processing method in each reduced-pressure drying apparatus. It is preferable to set it so as to match 60 seconds. Therefore, 240 seconds after the start of the processing, the processing of the first substrate by the second reduced-pressure drying apparatus is completed.

【0022】また、基板は第1の減圧乾燥装置におい
て、33.5秒かけて1.0Torrまで減圧されているの
で、ある程度乾燥している。よって、第2の減圧乾燥装
置において1秒で1.0Torrまで減圧したとしても、基
板上に形成される被膜に何ら影響を与えない。更に、
0.5Torrまで減圧しないと所望の被膜を得ることがで
きないが、最終的に所望の被膜を得るためには0.5Tor
rあれば充分なので、それ以上減圧する必要はない。
Further, the substrate is dried to some extent because the pressure is reduced to 1.0 Torr in 33.5 seconds in the first reduced-pressure drying apparatus. Therefore, even if the pressure is reduced to 1.0 Torr in 1 second in the second reduced-pressure drying apparatus, the coating formed on the substrate is not affected at all. Furthermore,
Unless the pressure is reduced to 0.5 Torr, a desired film cannot be obtained, but in order to finally obtain a desired film, 0.5 Torr is required.
Since r is enough, there is no need to reduce the pressure further.

【0023】この後、図1(e)に示すように、1枚目
の基板を洗浄装置に搬入し、2枚目の基板を第2の減圧
乾燥装置に搬入し、3枚目の基板を第1の減圧乾燥装置
に搬入し、4枚目の基板を回転処理装置に搬入し、5枚
目の基板を塗布装置に搬入する。そして、処理開始から
300秒後に1枚目の基板の洗浄装置での処理が終了す
る。以上の操作を繰り返すことで、基板表面に連続的に
被膜を形成する。
Thereafter, as shown in FIG. 1E, the first substrate is loaded into the cleaning device, the second substrate is loaded into the second vacuum drying device, and the third substrate is loaded. The first substrate is carried into the first vacuum drying device, the fourth substrate is carried into the rotation processing device, and the fifth substrate is carried into the coating device. Then, 300 seconds after the start of the processing, the processing of the first substrate in the cleaning apparatus ends. By repeating the above operation, a film is continuously formed on the substrate surface.

【0024】[0024]

【発明の効果】以上に説明したように本発明によれば、
被膜形成ラインの減圧乾燥ステーションに配置する減圧
乾燥装置を直列に複数台配置するようにし、上流側の減
圧乾燥装置で途中まで処理した基板を下流側の減圧乾燥
装置で引き続き処理するようにしたので、複雑な動きが
要求されるロボットなどを必要とせず、被膜形成ライン
のタクトタイムを短縮することができる。
According to the present invention as described above,
Since a plurality of reduced-pressure drying devices arranged in a reduced-pressure drying station of a film forming line were arranged in series, and a substrate processed halfway by an upstream reduced-pressure drying device was continuously processed by a downstream reduced-pressure drying device. Further, the tact time of the film forming line can be shortened without requiring a robot or the like which requires complicated movement.

【0025】また、本発明にあっては減圧乾燥ステーシ
ョンに配置した全ての減圧乾燥装置で基板が処理される
ので、全ての基板に同一条件での処理がなされる。した
がって、下流側の処理が均一に行える。
Further, in the present invention, since the substrates are processed by all the reduced-pressure drying apparatuses disposed in the reduced-pressure drying station, all the substrates are processed under the same conditions. Therefore, the downstream processing can be performed uniformly.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る被膜形成装置と被膜形成方法を経
時的に説明した図
FIG. 1 illustrates a film forming apparatus and a film forming method according to the present invention over time.

【図2】本発明による減圧乾燥時間と圧力の関係を示す
グラフ
FIG. 2 is a graph showing the relationship between reduced pressure drying time and pressure according to the present invention.

【図3】2台の減圧乾燥装置を搬送ラインに沿って並列
に配置した従来例を示す図
FIG. 3 is a diagram showing a conventional example in which two vacuum drying apparatuses are arranged in parallel along a transport line.

【図4】従来の減圧乾燥時間と圧力の関係を示すグラフFIG. 4 is a graph showing the relationship between the conventional reduced-pressure drying time and pressure.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/31 H01L 21/68 A 5F045 21/68 21/30 562 5F046 Fターム(参考) 2H025 AA04 AB16 DA19 EA04 EA10 3L113 AA02 AB10 AC23 AC67 BA34 CA20 CB34 CB35 DA04 DA06 4D075 AC73 CA47 DB13 DB31 DC21 DC22 4F042 AA02 AA07 AA10 DC00 ED05 5F031 CA02 CA05 FA01 FA02 FA07 MA03 MA26 PA04 5F045 BB08 DQ15 EB19 HA24 5F046 JA04 JA22 KA01 KA10 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat ゛ (Reference) H01L 21/31 H01L 21/68 A 5F045 21/68 21/30 562 5F046 F term (reference) 2H025 AA04 AB16 DA19 EA04 EA10 3L113 AA02 AB10 AC23 AC67 BA34 CA20 CB34 CB35 DA04 DA06 4D075 AC73 CA47 DB13 DB31 DC21 DC22 4F042 AA02 AA07 AA10 DC00 ED05 5F031 CA02 CA05 FA01 FA02 FA07 MA03 MA26 PA04 5F045 BB08 DQ15 EB08 HA14

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 基板を上流側から下流側へ搬送するライ
ン上に塗布ステーションを設け、この塗布ステーション
よりも下流側のライン上に減圧乾燥ステーションを配置
した被膜形成装置において、前記減圧乾燥ステーション
には、複数の減圧乾燥装置がライン上に直列に配置さ
れ、下流側の減圧乾燥装置は上流側での減圧乾燥処理が
終了した基板を受けて処理を継続すべく、複数の減圧乾
燥装置はそれぞれ独立して処理条件を設定し得るものと
したことを特徴とする被膜形成装置。
A coating station provided on a line for transferring a substrate from an upstream side to a downstream side; and a reduced-pressure drying station disposed on a line downstream of the coating station. A plurality of vacuum drying apparatuses are arranged in series on a line, and the vacuum drying apparatuses on the downstream side receive the substrate on which the vacuum drying processing on the upstream side is completed, and the vacuum drying apparatuses are respectively arranged to continue the processing. A film forming apparatus characterized in that processing conditions can be set independently.
【請求項2】 請求項1に記載の被膜形成装置を用いた
被膜形成方法であって、この被膜形成方法におけるタク
トタイムは塗布ステーションにおける処理時間に律せら
れ、また減圧乾燥ステーションを構成する各減圧乾燥装
置での処理時間は前記タクトタイムから各減圧乾燥装置
での大気開放時間と搬送時間とを減じた時間としたこと
を特徴とする被膜形成方法。
2. A method for forming a film using the film forming apparatus according to claim 1, wherein the tact time in the method for forming a film is limited by the processing time in a coating station, and each of the components constituting a reduced-pressure drying station. The method for forming a coating film, wherein the processing time in the reduced-pressure drying apparatus is a time obtained by subtracting the time for opening to the atmosphere and the transport time in each reduced-pressure drying apparatus from the tact time.
JP2001068017A 2001-03-12 2001-03-12 Film forming apparatus and film forming method Pending JP2002263548A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001068017A JP2002263548A (en) 2001-03-12 2001-03-12 Film forming apparatus and film forming method
TW091104292A TW559573B (en) 2001-03-12 2002-03-07 Coating forming apparatus and coating forming method
KR1020020013126A KR20020072802A (en) 2001-03-12 2002-03-12 Apparatus and method for forming a coating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001068017A JP2002263548A (en) 2001-03-12 2001-03-12 Film forming apparatus and film forming method

Publications (1)

Publication Number Publication Date
JP2002263548A true JP2002263548A (en) 2002-09-17

Family

ID=18926269

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (3)

Country Link
JP (1) JP2002263548A (en)
KR (1) KR20020072802A (en)
TW (1) TW559573B (en)

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Publication number Priority date Publication date Assignee Title
JP2005142372A (en) * 2003-11-06 2005-06-02 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
WO2006107056A1 (en) * 2005-03-30 2006-10-12 Zeon Corporation Method of forming pattern
JP2007173365A (en) * 2005-12-20 2007-07-05 Tokyo Electron Ltd Coating / drying processing system and coating / drying processing method
CN111223794A (en) * 2018-11-27 2020-06-02 株式会社斯库林集团 Substrate processing apparatus and substrate processing method
JP2020093218A (en) * 2018-12-13 2020-06-18 Toyo Tire株式会社 Vehicle anti-vibration rubber coating method and manufacturing method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142372A (en) * 2003-11-06 2005-06-02 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
WO2006107056A1 (en) * 2005-03-30 2006-10-12 Zeon Corporation Method of forming pattern
JPWO2006107056A1 (en) * 2005-03-30 2008-09-25 日本ゼオン株式会社 Pattern formation method
JP2007173365A (en) * 2005-12-20 2007-07-05 Tokyo Electron Ltd Coating / drying processing system and coating / drying processing method
CN111223794A (en) * 2018-11-27 2020-06-02 株式会社斯库林集团 Substrate processing apparatus and substrate processing method
KR20200063075A (en) * 2018-11-27 2020-06-04 가부시키가이샤 스크린 홀딩스 Substrate treatment apparatus and substrate treatment method
JP2020088194A (en) * 2018-11-27 2020-06-04 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
KR102355695B1 (en) 2018-11-27 2022-01-25 가부시키가이샤 스크린 홀딩스 Substrate treatment apparatus and substrate treatment method
CN111223794B (en) * 2018-11-27 2022-04-01 株式会社斯库林集团 Substrate processing apparatus and substrate processing method
JP2020093218A (en) * 2018-12-13 2020-06-18 Toyo Tire株式会社 Vehicle anti-vibration rubber coating method and manufacturing method
JP7213076B2 (en) 2018-12-13 2023-01-26 Toyo Tire株式会社 Coating method and manufacturing method for anti-vibration rubber for vehicle

Also Published As

Publication number Publication date
TW559573B (en) 2003-11-01
KR20020072802A (en) 2002-09-18

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