JP2002124451A - Temperature control method, temperature control chamber and exposure apparatus - Google Patents

Abstract

[PROBLEMS] To suppress the occurrence of so-called temperature fluctuation inside a temperature control chamber accommodating an exposure apparatus and other apparatuses. SOLUTION: Temperatures are measured by sensors S1 to S12 at a plurality of positions different in a vertical direction in an internal space of a chamber 11, and a vertical temperature gradient of the internal space is higher on an upper side and lower based on the measurement result. The temperature controllers A1 to A12 arranged corresponding to the sensors S1 to S12 are operated so that the sides are lowered.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for transferring an image of a mask pattern onto a photosensitive substrate, and other apparatuses which require strict temperature control, and more particularly to an apparatus having an air conditioning chamber. The present invention relates to a technique for controlling a temperature in the chamber.

[0002]

2. Description of the Related Art In manufacturing a semiconductor device, a liquid crystal display device, an image pickup device (CCD or the like), a micro device including a thin film magnetic head, and the like, a reticle pattern as a mask is coated with a photoresist through a projection optical system. An exposure apparatus is used for exposing and transferring to a photosensitive substrate such as a semiconductor wafer or a glass plate.

The photosensitive substrate is positioned in the X and Y directions within a plane orthogonal to the optical axis of the projection optical system before performing the exposure process, and the surface is aligned with the image plane of the projection optical system.・ Leveling adjustment is performed. The positioning of the photosensitive substrate in the X and Y directions is performed by detecting the position of the stage holding the photosensitive substrate with a plurality of laser interferometers, and matching the shot area to be exposed with the projection area of the projection optical system based on the detection result. It is done by moving as follows. The alignment of the surface of the photosensitive substrate with the image plane of the projection optical system is performed by irradiating the surface of the photosensitive substrate obliquely with detection light having a wavelength different from the wavelength of the exposure light, photoelectrically detecting the reflected light, and detecting the light. An oblique incident light type focus adjustment device (AF device) that automatically adjusts the position and inclination of the photosensitive substrate in the Z direction (along the optical axis of the projection optical system) so that the result matches a predetermined reference. It is performed using.

[0004] Such an exposure apparatus is provided with a group of optical elements such as a plurality of lenses and other mechanical parts, and the magnification and other imaging characteristics change due to a change in ambient temperature. Also, in order to prevent dust and dirt from adhering to optical elements, etc.,
The surrounding environment also needs to be clean. For this reason, the main part of the exposure apparatus is installed in a temperature control chamber in which the temperature and cleanliness are controlled.

[0005] As a method of air conditioning in such a chamber, a so-called down flow type in which air whose temperature is adjusted from the ceiling of the chamber in a direction parallel to the optical axis of the projection optical system (vertical direction), or a side wall of the chamber is used. There is known a so-called side flow type in which air whose temperature is adjusted horizontally is supplied from the air.

[0006]

Generally, a substrate stage for holding a photosensitive substrate is arranged below a projection optical system. The projection optical system is cooled to a constant temperature by circulating a refrigerant such as Fluorinert since the relative position between the optical elements directly affects the imaging characteristics. On the other hand, the stage for holding the photosensitive substrate has a heating section such as a drive mechanism, and the temperature around the photosensitive substrate increases due to heat generated by irradiation of the substrate with exposure light.

For this reason, a temperature gradient is generated in the space between the projection optical system and the substrate stage and in the vicinity thereof, in which the temperature decreases from the lower side to the upper side. This temperature gradient is
Although reduced by down-flow and side-flow air-conditioning, conventional air-conditioning simply supplies the air at a constant temperature, so that the temperature gradient that the upper side is lower and the lower side is higher still occurs. Up to.

Such a temperature gradient whose upper side is lower and whose lower side is higher causes convection of air, which causes temperature fluctuation (fluctuation in refractive index) due to a so-called flame phenomenon, and a laser interferometer or AF near the substrate stage. Since the optical path of the detection light of the apparatus is arranged, the detection light is refracted irregularly, causing errors in these detection values, and adversely affecting the positioning and attitude control of the photosensitive substrate. For this reason, there has been a problem that a highly accurate pattern may not be formed.

SUMMARY OF THE INVENTION The present invention has been made in view of such problems of the prior art, and has as its object to suppress the occurrence of so-called temperature fluctuations inside a temperature control chamber that houses an exposure apparatus and other apparatuses. .

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description, the present invention will be described with reference to the reference numerals shown in the drawings representing the embodiments. However, the present invention is not limited to the members shown in the drawings attached with.

A temperature control method according to the present invention for achieving the above object is a temperature control method for an internal space of a chamber (11), wherein the temperature is measured at a plurality of different positions in the internal space in a vertical direction. The temperature of the internal space is adjusted such that the vertical temperature gradient of the internal space is higher on the upper side and lower on the lower side based on the measurement result.

As shown in FIG. 2, when there is a temperature gradient in the inner space of the chamber 11 that is lower on the upper side and higher on the lower side, convection of air is generated as shown by an arrow in the figure, for example.
A so-called temperature fluctuation (air fluctuation) in which the refractive index of air dynamically fluctuates occurs, which has a serious adverse effect on optical measurement and the like. However, as shown in FIG. 3, when there is a temperature gradient in the interior space of the chamber 11 that is higher on the upper side and lower on the lower side, a static refractive index distribution corresponding to the temperature gradient occurs, but the convection of air is reduced. Such a temperature fluctuation does not occur because it does not occur. In the present invention, since the temperature of the internal space of the chamber is positively adjusted so that the temperature gradient is higher on the upper side and lower on the lower side, the occurrence of such temperature fluctuation can be suppressed.

[0013] To achieve the above object, the temperature control chamber of the present invention comprises a chamber (11) and temperature measuring devices (S1 to S12) arranged at a plurality of different positions in the vertical direction of the internal space of the chamber. ) And a temperature control device (A) disposed at a plurality of locations in the internal space at different positions in the vertical direction.
1 to A12) and a control device (32) that controls the temperature adjusting device such that the vertical temperature gradient of the internal space is higher on the upper side and lower on the lower side based on the measurement result measured by the temperature measuring device. ).

According to the present invention, by controlling the temperature adjusting device based on the measurement result of the temperature measuring device, the temperature gradient of the internal space of the chamber is made higher on the upper side and lower on the lower side, so that the so-called temperature fluctuation is reduced. A climate chamber that is less likely to occur is provided.

An exposure apparatus according to the present invention for achieving the above object provides an image of a pattern of a mask (R) by a projection optical system (P).
An exposure apparatus having an exposure main unit for projecting and exposing a substrate (W) through L), wherein the exposure main unit is provided inside the temperature control chamber (11).

According to the exposure apparatus of the present invention, since the exposure main body is provided in the temperature control chamber in which the occurrence of temperature fluctuation is suppressed, the exposure system is provided in a detection system such as a laser interferometer or an AF device provided in the exposure main body. Errors due to temperature fluctuations are less likely to occur, and positioning and attitude control of the substrate and the like can be performed with high accuracy. As a result, a fine pattern can be transferred and formed with high precision, and a microdevice or the like having high performance and high reliability can be manufactured.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An exposure apparatus having a chamber according to an embodiment of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus of the present embodiment. This exposure apparatus is a step-and-repeat type reduction projection type exposure apparatus.

In FIG. 1, reference numeral 11 denotes a constant temperature chamber (temperature control chamber). The constant temperature chamber 11 is a box-like body having a top plate 12 and side walls 13A and 13B, on a surface plate 14 installed on an installation surface. It is installed in. Constant temperature chamber 1
A partition 15 is provided horizontally inside 1 and its internal space is divided into an upper space and a lower space.

The constant temperature chamber 11 houses an exposure main body for projecting and transferring an image of a pattern formed on the reticle R to a wafer W to be exposed via a projection optical system PL. The constant temperature chamber 11 prevents dust and other particles from adhering to the exposure main body, and
Is a device for controlling the temperature of the internal space of the device to be within a predetermined temperature range. In the constant temperature chamber 11, temperature control with higher accuracy than in a normal clean room is performed. For example, while the temperature control of the clean room is in the range of ± 2 to 3 ° C., the temperature control in the constant temperature chamber 11 is ± 0. It is kept at about 1 ° C.

Exposure light emitted from a light source (not shown) is guided to a reticle R by an illumination optical system 16. KrF excimer laser light source (oscillation wavelength 248 nm)
Or ArF excimer laser light source (oscillation wavelength 193 nm)
Etc. are used. Although not shown in detail, the illumination optical system 16 includes a beam shaping optical system, an energy modulator, an optical integrator, an illumination system aperture stop, a reticle blind mechanism, and the like.

The beam shaping optical system is constituted by a cylinder lens, a beam expander, and the like, and efficiently enters a subsequent optical integrator (such as a lot integrator or a fly-eye lens, in this embodiment, a fly-eye lens). Then, the cross-sectional shape of the exposure light is shaped.
The energy modulator is mounted on a rotatable revolver with transmittance (=
A plurality of ND filters having different 1-dimming ratios) are arranged. By rotating the revolver, the transmittance for incident exposure light is switched from 100% in a plurality of steps.

The exposure light emitted from the energy modulator enters the fly-eye lens. The fly-eye lens forms a number of secondary light sources to illuminate the subsequent reticle R with a uniform illumination distribution. An aperture stop (so-called σ stop) of an illumination system is arranged on the exit surface of the fly-eye lens. Exposure light emitted from a secondary light source in the aperture stop is reflected by a beam splitter having a small reflectance and a large transmittance. A part is branched and is incident on an integrator sensor for detecting the amount of light.

On the other hand, the exposure light transmitted through the beam splitter passes through a rectangular opening of a reticle blind mechanism having a plurality of blinds via a relay lens and the like. The blind is arranged near a conjugate plane with respect to the pattern plane of the reticle R. In addition, the blind is movable in the forward and backward directions with respect to the optical path of the exposure light, so that the illumination area of the reticle R by the exposure light can be changed.

Exposure light that has passed through the reticle blind mechanism passes through a relay lens, a condenser lens, and the like, and forms a uniform illuminance distribution on a rectangular illumination area on a reticle R that is suction-held on a reticle stage 17 via a reticle holder 18. To illuminate. The pattern in the illumination area on the reticle R is projected at a projection magnification α (α is, for example, 1 /
The image reduced by (4, 1/5, etc.) is projected and exposed on an exposure area (shot area) on the wafer W coated with the photoresist. The projection optical system PL has a flange on the outer peripheral portion and in the center in the optical axis direction, and is fixed to a mount (not shown) of the exposure apparatus main body by the flange while penetrating the partition wall 15.

Hereinafter, a direction parallel to the optical axis AX of the projection optical system PL is defined as a Z direction, and a direction perpendicular to the plane of FIG. 1 is defined as an X direction and a direction perpendicular to the X direction in a plane perpendicular to the optical axis AX. The direction will be described as a Y direction (a direction parallel to the paper surface of FIG. 1).

The attitude of the reticle R is determined by the reticle stage 1
A moving mirror fixed on 7 and a laser interferometer (both not shown) are detected and finely adjusted based on a command from a control device.

On the other hand, the wafer W is held by suction on a wafer holder 19, and the wafer holder 19 is placed on a Z stage 20. Z stage 20 is XY stage 21
Is placed on top. The XY stage 21 moves the wafer W in the X direction and the Y direction, and positions the wafer W.

The Z stage 20 is mounted on an XY stage 21 via a plurality of actuators (Z direction displacement devices) 22. By driving the actuator 22, the position of the wafer W in the Z direction and the XY plane are adjusted. The tilt angle of the wafer W can be adjusted. A movable mirror 23 is fixed on the Z stage 20, and a laser interferometer 24 is provided at a position corresponding to the movable mirror 23. The laser interferometer 24 emits detection light (laser light) PDL to the movable mirror 23, and measures the position (X coordinate, Y coordinate) of the XY stage 21 by detecting the reflected light from the movable mirror 23. . The control device (not shown) performs X based on the coordinates measured by the laser interferometer 24.
The Y stage 21 is positioned at a target position.

In the vicinity of the wafer W on the Z stage 20,
An illuminance non-uniformity sensor composed of a photoelectric conversion element and a reference plate 25 on which a fiducial mark used for matching a relative attitude between the reticle R and the wafer W are attached.

The alignment of the surface of the wafer W with the image plane of the projection optical system PL is performed by an AF (autofocus) device. The AF apparatus includes a light transmitting system 26 for irradiating the detection light ADL for AF onto the surface of the wafer W from an oblique direction, and a light receiving system 27 for receiving the reflected light of the detection light ADL on the surface of the wafer W. .

The light transmitting system 26 is provided with a light emitting portion for emitting broadband light having a band in the red or infrared region, and further includes a slit, a lens, a mirror, an aperture stop, and the like. The light ADL is projected obliquely to the surface of the wafer W. At this time, an image of the slit is formed on the wafer W. The reflected light ADL of the slit image includes a fixed mirror, a lens, a vibrating mirror, an angle-variable parallel plate glass (plane parallel), a slit for detection, and a photomultiplier for photoelectrically detecting the light flux of the slit image transmitted through the slit. The light enters the light receiving system 27 including a plier.

The detection signal output from the light receiving system 27 is normally set to zero level when the surface of the wafer W coincides with the best focus of the projection optical system PL. When W is displaced upward along the optical axis AX, the signal is outputted as a positive level, and when W is displaced in the reverse direction, the signal is outputted as an analog signal having a negative level. The control device can perform automatic focusing of the wafer W by appropriately driving the actuator 22 so that the detection signal becomes zero level.

Next, the constant temperature chamber (temperature control chamber) 11 in which such an exposure main body is accommodated will be described in detail.

The constant temperature chamber 11 is provided with a side flow type air conditioner. The air conditioner is provided with an air supply device 28 and an exhaust device 29, and the air outlet 30 of the air supply device 28 is disposed above and below a portion forming a lower space of one side wall 13 </ b> A of the constant temperature chamber 11. The airflow controlled at a constant temperature is blown from the air outlet 30 in a direction (horizontal direction) substantially perpendicular to the optical axis of the projection optical system PL.

The air supply device 28 includes a HEPA (or ULPA) filter and a chemical filter for removing foreign substances (dust), sulfate ions, ammonium ions, and the like floating in the clean room. The entry of such foreign matter into the space is prevented.

On the other hand, an air outlet 31 is provided above and below the side wall 13B facing the air outlet 30 in the lower space of the constant temperature chamber 11, and the air flow blown out from the air outlet 30 is Horizontally flowing air outlet 3
1 to the outside. By such an airflow flowing in the horizontal direction, heat released from the heating elements and the like existing at the respective height positions is transferred to the constant temperature chamber 11.
Drain out of. The operation of the air supply device 28 and the exhaust device 29 is performed by an air conditioning control device 32 including a microcomputer or the like.
Is controlled by

In the constant temperature chamber 11 and the exposure main body, a plurality of temperature detecting sensors (temperature measuring devices) S1 to S1 are provided.
S12 and temperature controllers (temperature adjusting devices) A1 to A12 are provided.

The sensors S1 to S9 correspond to the sensors S1 to S9.
9 is a sensor for detecting the temperature of the member on which the sensor 9 is attached. And the sensor S4 is the wafer holder 1
9, the sensor S5 measures the temperature of the platen 14,
6 is the temperature of the XY stage, and sensor S7 is the projection optical system P
The temperature slightly above the distal end of the lens barrel L is measured by the sensor S8.
Represents the temperature of a portion of the lens barrel of the projection optical system PL having substantially the same height as that of the AF devices 26 and 27. Are respectively detected. The sensors S10 to S12 are
The sensor detects a space temperature in the constant temperature chamber 11, and detects temperatures at a plurality of positions different from each other in a vertical direction of the internal space.

The temperature controllers A1 to A9 correspond to the temperature controllers A1 to A9.
Is a device that heats or cools a member to which the temperature controllers A10 to A12 are attached.
Is a device that heats or cools the space around the device. As the temperature controllers A1 to A12, for example, a heater or a cooler which is used alone or in combination can be used.

As the temperature controllers A1 to A12, Peltier elements that generate or absorb heat using the Peltier effect may be used, or those that circulate a working fluid for heating or cooling may be used. . Of course, these combinations may be used.

The temperature controllers A1 to A9 are sensors S1 to S1, respectively.
Corresponding to S9, the sensors S1 to S9 are attached to the attached member. The temperature controllers A10 to A12 are devices for adjusting the temperature of the air around the temperature controllers A10 to A12.
It is arranged at substantially the same height as the height corresponding to each of 1 to S12. The temperature controllers A10 to A12 may include a fan.

The detected values of the respective sensors S1 to S12 are supplied to an air conditioning controller 32, and the air conditioner controller 32 controls the temperature controller A based on the detected values of the sensors S1 to S12.
1 to A12 are controlled. That is, the air conditioning controller 32
Is the constant temperature chamber 11 based on the detection values of the sensors S1 to S12.
The temperature distribution in the vertical direction of the lower space is determined, and each of the temperature controllers A1 to A
Heat or cool with 12. The target temperature is determined experimentally or theoretically for each of the sensors S1 to S12 so that the lower space of the constant temperature chamber 11 has an optimal temperature gradient in which the upper side is higher and the lower side is lower, and the corresponding temperature is determined. The temperature controllers A1 to A12 may be respectively subjected to feedback control.

As a specific example of the temperature gradient in the internal space of the constant temperature chamber 11, +0.1
° C.

According to the present embodiment, based on the detection values of the sensors S1 to S12 provided in each part in the temperature control chamber 11, the temperature controllers A1 provided corresponding to the respective sensors S1 to S12. By locally adjusting the temperature in the vicinity thereof through A12, the lower space of the constant temperature chamber 11 is controlled so as to have a temperature gradient in which the upper side is higher and the lower side is lower. Air convection is prevented. Accordingly, the optical path of the detection light PDL of the laser interferometer 24 and the detection light ADL of the AF devices 26 and 27
The temperature fluctuation (dynamic change in the refractive index) is less likely to occur on the optical path, and the accuracy of the detected value can be improved.

As a result, the positioning of the wafer W in the X and Y directions and the alignment of the surface thereof with the image plane of the projection optical system PL can be strictly performed, so that the accuracy of the pattern transferred and formed on the wafer W is improved. Therefore, high performance and high reliability microdevices can be manufactured.

In particular, in this embodiment, in addition to the above-described temperature control in which the upper side has a higher temperature gradient and the lower side has a low temperature gradient,
The constant temperature chamber 11 is controlled by the air supply device 28 and the exhaust device 29.
Since the air flow is provided in one horizontal direction in the inside, it is possible to more stably maintain a state in which the upper side has a high temperature gradient and the lower side has a low temperature gradient.

The embodiments described above are described for facilitating the understanding of the present invention, and are not described for limiting the present invention. Therefore,
Each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

For example, the installation positions and the numbers of the sensors S1 to S12 and the temperature controllers A1 to A12 are not limited to those described above, but may be other positions or other numbers. In this case, each sensor and the temperature controller are not necessarily one-to-one.
It is not necessary to correspond to the above, and a single temperature controller may be provided for several sensors, or conversely, several temperature controllers may be provided for a single sensor.

Further, in the above-described embodiment, the internal space below the partition 15 of the constant temperature chamber 11 is subjected to temperature control such that the temperature gradient is higher on the upper side and lower on the lower side. Alternatively, the temperature control may be performed such that the temperature gradient is higher on the upper side and lower on the lower side as a whole, including the upper internal space. The temperature control may be performed on each of the space above and below the partition 15 of the constant temperature chamber 11. further,
The temperature control may be performed on a part of a smaller space in the constant temperature chamber 11, for example, a limited space including a part between the projection optical system PL and the wafer W.

In the above embodiment, the constant temperature chamber 11
Although it has been described that the gas supplied to the inside is air, other gases may be used. In particular, when a light source that emits far ultraviolet light is used, it is desirable to use nitrogen or helium in order to prevent absorption by oxygen in the air.

In the above-described embodiment, a step-up / repeat type reduction projection type exposure apparatus (stepper) has been described as an example, but a step-and-scan type reduction method in which a reticle and a substrate are synchronously moved is described. The present invention can be similarly applied to a projection scanning exposure apparatus (scanning stepper), an exposure apparatus of a mirror projection system, a proximity system, and the like.

[0052] Furthermore, as an exposure light source in the embodiment described above, the wavelength of KrF excimer laser or a wavelength of 248nm is assumed that an ArF excimer laser of 193 nm, otherwise, i-ray or g-line, _{F 2} laser (Wavelength: 157 nm), an Ar ₂ laser (wavelength: 126 nm), and other light sources can be used.

[0053] The F ₂ laser as an example in the exposure apparatus whose light source, the refractive optical member used in the illumination optical system or the projection optical system (lens elements) are all fluorite, isothermal chamber, the illumination optical system, and projection optical The air in the system is replaced with, for example, helium gas. The reticle is made of fluorite, fluorine-doped synthetic quartz, magnesium fluoride, L
Those manufactured from iF, LaF ₃ , lithium calcium aluminum fluoride (Lycaffe crystal), crystal, or the like are used.

Instead of the above light source, a harmonic of a solid-state laser such as a YAG laser having an oscillation spectrum at any one of 248 nm, 193 nm and 157 nm may be used. In addition, a single-wavelength laser in the infrared or visible region oscillated from a DFB semiconductor laser or a fiber laser is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and yttrium), and a nonlinear optical crystal is used. Alternatively, harmonics whose wavelength has been converted to ultraviolet light may be used.

For example, the oscillation wavelength of a single-wavelength laser is set to 1.
When the wavelength is in the range of 51 to 1.59 μm, the generated wavelength is 18
An eighth harmonic having a wavelength in the range of 9 to 199 nm or a tenth harmonic having a generation wavelength in the range of 151 to 159 nm is output. In particular, the oscillation wavelength is 1.544 to 1.553 μm.
m, 8 in the range of 193 to 194 nm.
A harmonic wave, that is, ultraviolet light having substantially the same wavelength as the ArF excimer laser is obtained, and the oscillation wavelength is set to 1.57 to 1.58 μm.
m, 1 in the range of 157 to 158 nm.
0 harmonic, i.e., ultraviolet light having almost the same wavelength as the F ₂ laser is obtained.

The oscillation wavelength is set to 1.03 to 1.12 μm.
, A 7th harmonic whose output wavelength is in the range of 147 to 160 nm is output.
When the range of 099～1.106Myuemu, generation wavelength 7 harmonic in the range of 157～158Nm, i.e., ultraviolet light having almost the same wavelength as the _{F 2} laser is obtained. Note that an ytterbium-doped fiber laser can be used as the single-wavelength oscillation laser.

The projection optical system may use not only a reduction system but also an equal magnification system or an enlargement system (for example, an exposure apparatus for manufacturing a liquid crystal display or a plasma display). Further, as the projection optical system, any one of a catoptric optical system, a refractive optical system, and a catadioptric optical system may be used.

The present invention also relates to an exposure apparatus used for manufacturing a thin-film magnetic head, an exposure apparatus used for manufacturing a display including a liquid crystal display element and the like, for transferring a device pattern onto a glass plate, and a semiconductor element. Exposure equipment used to transfer device patterns onto ceramic wafers, exposure equipment used to manufacture imaging devices (such as CCDs) and micromachines, exposure equipment used to manufacture photomasks, exposure used to manufacture DNA chips It can also be applied to devices and the like.

An illumination optical system composed of a plurality of lenses,
Incorporate the projection optical system into the exposure main unit and perform optical adjustments, as well as assemble the reticle stage and substrate stage consisting of many mechanical components into the exposure main unit, connect wiring and piping, and assemble a constant temperature chamber with a separate air conditioner ,
The exposure apparatus of the present embodiment can be manufactured by installing the exposure main body in the constant temperature chamber and performing overall adjustment (electric adjustment, operation confirmation, and the like). It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

For a semiconductor device, a step of designing the function and performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, a lithography including the exposure apparatus of the above-described embodiment and the like. It is manufactured through a step of exposing and transferring a pattern of a mask onto a wafer by a system, a step of assembling a device (including a dicing step, a bonding step, and a package step), an inspection step, and the like.

In the above-described embodiment, the case where the exposure apparatus according to the present invention, that is, the temperature adjustment method and the chamber according to the present invention are applied to the exposure apparatus has been described. For any device that needs to suppress the occurrence of temperature fluctuations,
The temperature adjustment method according to the present invention and the temperature control chamber according to the present invention can be applied.

[0062]

According to the present invention, the temperature of the internal space of the chamber is controlled so that the temperature gradient is higher on the upper side and lower on the lower side, so that the effect of so-called temperature fluctuation is suppressed.

[Brief description of the drawings]

FIG. 1 is a diagram schematically illustrating an overall configuration of an exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a temperature distribution in a chamber when a temperature fluctuation occurs.

FIG. 3 is a diagram showing a temperature distribution in a chamber when no temperature fluctuation occurs.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 ... Constant temperature chamber (chamber) 16 ... Illumination optical system 17 ... Reticle stage 20 ... Z stage 21 ... XY stage 22 ... Actuator 23 ... Moving mirror 24 ... Laser interferometer 26 ... Light transmission system of AF apparatus 27 ... Light reception of AF apparatus System 28 Air supply device 29 Exhaust device 30 Outlet 31 Exhaust port 32 Air conditioning control device (control device) R Reticle W Wafer S1 to S12 Sensors (temperature measuring devices) A1 to A12 Temperature controllers (Temperature adjustment device)

Claims (3)

[Claims] 1. A method for controlling a temperature of an internal space of a chamber, comprising: measuring a temperature at a plurality of locations at different positions in a vertical direction of the internal space; and measuring a temperature of the internal space in a vertical direction based on the measurement result. A temperature control method, comprising: adjusting the temperature of the internal space so that the gradient is higher on the upper side and lower on the lower side. 2. A chamber, a temperature measuring device disposed at a plurality of positions in the interior space of the chamber that are different in a vertical direction, and a temperature disposed at a plurality of positions of the interior space that are different in a vertical direction. An adjustment device, and a control device that controls the temperature adjustment device based on a measurement result measured by the temperature measurement device such that a vertical temperature gradient of the internal space is higher on the upper side and lower on the lower side. A temperature control chamber, characterized in that: 3. An exposure apparatus comprising an exposure main unit for projecting and exposing an image of a mask pattern onto a substrate via a projection optical system, wherein the exposure main unit is provided inside a temperature control chamber according to claim 2. An exposure apparatus characterized in that: