JP2002118717A - Serial linear solid-state image pickup element, its control method and image reader using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a serial linear solid-state image pickup element that can read images at a high-speed, so as to reduce the read time thereby enhancing the processing capability of an image reader, and to provide its control method and the image reader employing the method. SOLUTION: The linear solid-state image pickup element has a photodiode array, where photodiodes of each pixel are arranged in a single line, output transistors(TRs) that output electric charges from each photodiode of the photodiode array, and a transfer path through which the electric charges supplied from the output TRs to output terminals. The photodiode array is divided into divisions, each having a different number of pixels in the arrangement direction, each division has a corresponding transfer path and a corresponding output terminal, and each division reads electric charges from a pixel array of each division from the output terminal, corresponding to each division in parallel so as to solve this task.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a divided one-dimensional solid-state image sensor, a control method thereof, and an image reading apparatus using the same, and more particularly to a photo sensor for a one-dimensional solid-state image sensor such as a line CCD sensor or a line MOS type sensor. A photodiode arranged in a one-dimensional direction of a diode array is divided into a plurality of blocks in the arrangement direction. Image reading technology
That is, the present invention relates to a method for controlling a divided one-dimensional solid-state image sensor at the time of image reading and an image reading apparatus using this image reading technique.

[0002]

2. Description of the Related Art Conventionally, printing an image photographed on a photographic film (hereinafter simply referred to as a film) such as a negative film or a reversal film onto a photosensitive material (photographic paper) involves projecting the image of the film onto the photosensitive material. So-called direct exposure (analog exposure), in which a photosensitive material is surface-exposed, has been the mainstream.

On the other hand, in recent years, a printing apparatus using digital exposure, that is, an image obtained by photoelectrically reading an image recorded on a film is converted into a digital signal, and then subjected to various image processings to perform image processing for recording. 2. Description of the Related Art Digital photo printers have been put to practical use in which a photosensitive material is scanned and exposed with recording light modulated in accordance with the image data to record an image (latent image) and produce a finished print.

[0004] Such a digital photo printer is
Basically, a scanner (image reading device) that photoelectrically reads an image recorded on a film, an image processing device that processes the read image to generate image data (exposure conditions) for output, and output from the image processing device A printer (image recording device) that scans and exposes the photosensitive material according to the output image data to record a latent image, and a processor (developing device) that develops the exposed photosensitive material and prints it. And an image output device.

In a scanner (image reading apparatus), reading light emitted from a light source is incident on a film to obtain projection light carrying an image photographed on the film, and the projection light is transmitted to a CCD sensor by an imaging lens. An image is read by forming an image on an image sensor and photoelectrically converting the image, performing various types of image processing as necessary, and sending the image data to a film processing device as image data (image data signal). The image processing apparatus sets image processing conditions from image data read by a scanner, performs image processing according to the set conditions on the image data, and outputs the image data to a printer as output image data (exposure conditions) for image recording. send.

In a printer, for example, if the apparatus uses light beam scanning exposure, the light beam is modulated in accordance with image data sent from an image processing apparatus, and the light beam is deflected in the main scanning direction. By transporting the photosensitive material in a sub-scanning direction orthogonal to the main scanning direction, the photosensitive material is exposed (burned) by a light beam carrying an image to form a latent image, and then a processor is provided to handle the photosensitive material according to the photosensitive material. An image photographed on a film is subjected to a development process or the like to obtain a reproduced print (photograph).

[0007] As an image reading method in such a digital photo printer, there is a so-called planar reading method in which reading light is irradiated onto the entire surface of one frame photographed on a film, and the projected light is photoelectrically read by an area sensor. To
Using a line sensor, a slit-shaped reading light parallel to the direction in which the line sensor extends (main scanning direction) is incident on the film, and the film is transported in the sub-scanning direction orthogonal to the main scanning direction (or the optical system is moved). ), A slit scanning reading method for reading the entire surface of one frame is known. Here, the area sensor is generally expensive because it has a large number of CCD cells and photoelectric conversion elements, and has a problem (such as correction of defective pixels) due to having a large number of CCD cells. Is more advantageous for slit scanning reading by a line sensor.

FIG. 5 schematically shows a schematic configuration of a conventional line CCD sensor. As shown in FIG.
The sensor 100 has a photodiode array 102, a transfer gate 104, a transfer path 106, and an amplifier 108. The photodiode array 102
Photodiodes PD1 to PDn that accumulate electric charges according to the amount of light incident on each pixel are arranged in a line from the first pixel to the nth pixel. The charge accumulated in each photodiode PD of the photodiode array 102 is transferred to a transfer path 106 via a transfer gate 104.
Sent to The charge sent to the transfer path 106 is transferred to the transfer path 1
The data is sequentially transferred one pixel at a time in the direction of arrow T in FIG.

As described above, when all the n pixels are sequentially transferred and one amplifier 108 reads out one pixel at a time, the read time is p × n, where p is the transfer time of one pixel. Therefore, it is necessary to shorten the readout time to increase the processing efficiency. On the other hand, Japanese Patent Laid-Open No.
No. 8841 discloses that in a line CCD sensor, a photodiode array is divided into a plurality of sections in the scanning direction, and a transfer gate, a transfer path, and an amplifier are connected for each divided section, and read out for each divided section. Is performed, whereby reading can be performed at high speed.

[0010]

However, the method disclosed in the above publication merely divides the photodiode in the scanning direction, and does not take into account the method of division and the method of reading at all. Was. For this reason, there is still a problem in terms of the efficiency of reading by the line CCD sensor, and there has been a problem that sufficient speedup of reading cannot be achieved depending on the type of document to be read.

An object of the present invention is to solve the above-mentioned problems of the prior art and to use a divided one-dimensional solid-state imaging device such as a divided line CCD sensor or a divided line MOS type sensor in which a photodiode array is divided in a scanning direction. A divided one-dimensional solid-state image pickup device capable of shortening the reading time and reading at a high speed by simultaneously reading the data in parallel from a plurality of amplifiers according to the type of the document and further improving the processing capability of the device. It is an object of the present invention to provide a method for controlling a divided one-dimensional solid-state imaging device and an image reading apparatus using the divided one-dimensional solid-state imaging device.

[0012]

According to a first aspect of the present invention, there is provided a photodiode array in which photodiodes for each pixel are arranged in a line, and a photodiode array comprising the photodiodes. A one-dimensional solid-state imaging device having an output transistor that outputs electric charges and a transfer path that transfers electric charges supplied from the output transistor to an output terminal, wherein the photodiode array has a pixel number of Each of the divided sections is divided into a plurality of divided sections, and each of the divided sections has a corresponding one of the transfer path and the output terminal, and for each of the divided sections, a pixel of each of the divided sections from the output terminal corresponding to each of the divided sections. Division 1 wherein columns are read out in parallel
A three-dimensional solid-state imaging device is provided.

Here, it is preferable that the one-dimensional solid-state imaging device is a signal transfer system, the output transistor is a transfer gate, and the transfer path is an analog shift register. Further, it is preferable that the one-dimensional solid-state imaging device is a line CCD sensor.

Further, the one-dimensional solid-state imaging device is of an addressing type, the output transistor is a switching transistor, and the transfer path is a digital shift for selecting a switching transistor of the photodiode for outputting the charge. Preferably it is a register. Further, the one-dimensional solid-state imaging device is a MOS sensor, the output transistor is a MOS transistor, and the transfer path is a digital shift register that selects a MOS transistor of the photodiode that outputs the charge. Is preferred.

That is, according to a first aspect of the present invention, a photodiode array in which photodiodes of respective pixels are arranged in a line, a transfer gate for outputting charges from each photodiode of the photodiode array, and a transfer gate A line CCD sensor having a transfer path for transferring supplied charges to an output terminal, wherein the photodiode array has
Each of the divided sections is divided into a plurality of divided sections having different numbers of pixels, and each of the divided sections has a corresponding one of the transfer path and the output terminal. Each of the divided sections is divided from the output terminal corresponding to each of the divided sections. It is an object of the present invention to provide a divided one-dimensional solid-state imaging device in which pixel rows in a section are read out in parallel.

According to a first aspect of the present invention, there is provided a photodiode array in which photodiodes of respective pixels are arranged in a line, a MOS transistor for outputting electric charges from each photodiode of the photodiode array, and a photodiode for outputting the photodiodes. Wherein the photodiode array is divided into a plurality of divided sections having different numbers of pixels in the alignment direction, and a corresponding one of the divided sections is provided. A one-dimensional divided one-dimensional array in which pixel rows of each divided section are read in parallel from the output terminal corresponding to each divided section for each of the divided sections. It is intended to provide a solid-state imaging device.

[0017] Similarly, in order to solve the above problems,
A second aspect of the present invention is a control method for reading an image with the divided one-dimensional solid-state imaging device according to the first aspect of the present invention, wherein the divided section having a smaller number of pixels is selected from among the divided sections. Focusing on a part in the alignment direction of the photodiode array, and for reading an image with a narrow projection area, using only a divided section with a small number of pixels concentrated on a part in the alignment direction. An object of the present invention is to provide a method for controlling a divided one-dimensional solid-state imaging device, wherein reading is performed.

According to a third aspect of the present invention, there is provided an image reading section for photoelectrically reading an image photographed on a photographic film. An object of the present invention is to provide an image reading apparatus using a three-dimensional solid-state imaging device.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A divided one-dimensional solid-state imaging device according to the present invention, a control method thereof, and an image reading apparatus using the same will be described in detail below with reference to the preferred embodiments shown in the accompanying drawings. Hereinafter, the division 1 according to the first embodiment of the present invention will be described.
A split line CCD sensor will be described as a typical example of a three-dimensional solid-state imaging device, but it is needless to say that the present invention is not limited to this.

FIG. 1 shows a schematic configuration of an embodiment of an image reading apparatus according to a third aspect of the present invention. As shown in FIG. 1, the image reading device 10 of the present embodiment is configured by a reading optical system using a line CCD sensor. That is, the image reading apparatus 10 mainly includes a light source 12, a film carrier 16, and a lens unit (hereinafter, referred to as a lens).
18 and a divided line CCD sensor (hereinafter simply referred to as line C)
20 (referred to as a CD sensor).

The light source 12 is composed of, for example, a metal halide lamp or a halogen lamp, and has a parabolic reflector 14 that transmits IR (infrared light) so that the light source 12 is located at a focal position. ing. Light source 12
Light emitted from the photographic film F reflected by the reflector 14 and held by the film carrier 16
Is irradiated. Although not shown, between the light source 12 and the film carrier 16, an IR cut filter for cutting the IR component of the light emitted from the light source 12, a CM
A dimming filter for Y, an ND filter as a neutral density filter, a light diffusion box for diffusing light irradiated on the photographic film F, and the like are arranged in order along the optical axis L of the emitted light.

The photographic film F includes a film carrier 16
Is transported between the base 16a and the cover 16b so that the film surface is perpendicular to the optical axis L. With the film carrier 16 carrying the photographic film F interposed,
On the side opposite to the light source 12, a lens 18 for forming an image of the light transmitted through the photographic film F and a line CCD sensor 20 provided at the image forming position are arranged in order along the optical axis L. The line CCD sensor 20 is provided with three photodiode arrays in which photodiodes are arranged in a line so as to be orthogonal to the transport direction of the photographic film F, and R, G, and R are provided on the light incident side of each line. It is composed of a three-line color CCD sensor to which any one of the B color separation filters is attached.

FIG. 2 schematically shows the structure of the line CCD sensor 20. This is for a photodiode array of one of three lines. Since each line is the same except for the color separation filter, this one-line photodiode array will be described. As shown in FIG. 2, the line CCD sensor 20 (one line) includes a photodiode array 22, a transfer gate 24, a transfer path 26, and an amplifier 28 as an output terminal.

The photodiode array 22 has a plurality (n) of photodiodes PD arranged in the main scanning direction, and is divided into eight sections 22-1 to 22-8. Here, the four intermediate sections 22-3 to 22-6 are:
It is composed of j photodiodes PD1 to PDj, the number of pixels is j, and the four sections 22-1, 22-2, 22-7, and 22-8 at the front two ends and the rear two ends are k pieces. Of photodiodes PD1 to PDk. The total number of pixels of the photodiode array 22 is n = 4 × k + 4
× j. Further, k ≧ j, the number of pixels is larger in the four sections at both ends, and the number of pixels is smaller in the middle four sections.

A common transfer gate 24 is connected to each divided section 22-i (i = 1 to 8) of the photodiode array 22. In addition, each divided section 22
For -i, a transfer path 26-i (i = 1 to 8) and an amplifier (output terminal) 28-i (i = 1 to 8) are provided in association with each other. Thus, each divided section 22
−i independently of the amplifier 28-i,
The pixels of each divided section 22-i can be read out in parallel at the same time. Therefore, even when reading all n pixels, the line period is determined by the k pixel divided section having a large number of pixels. 1
Assuming that the transfer time of a pixel is P, the read time of a k pixel divided section is k × P, and the line cycle is k × P. If the number of pixels in one divided section is further reduced by further fine division, the line cycle can be further reduced. However, the finer the division, the greater the number of divided sections and the number of amplifiers, so that many external circuits are required and there is a problem in cost.

On the other hand, when an image is read by the line CCD sensor, the entire photodiode array is not necessarily used, so that the divided sections to be used are limited according to the size of the image projected on the CCD. If the divided section of that part is finely divided to reduce the number of pixels, and the number of pixels is increased for the divided section of an unused part, the reading time can be efficiently reduced. Therefore, in the present embodiment, the division in the middle from both ends of the photodiode array 22 is made finer, and for an image having a narrow CCD projection area, only the division section having a small number of pixels j in the division section is used. I'm trying to use Thereby, the line cycle is set to j / n × 10
It can be shortened to 0 [%].

Here, the line CCD sensor 20 shown in FIG.
The photodiode PD of the photodiode array 22 is used to separate the projection light of the original image into each color, receive the light, and perform photoelectric conversion for each pixel to accumulate charges. The photodiode P of the photodiode array 22 used for the line CCD sensor 20 in the illustrated example is shown.
In D, for the sake of simplicity, the description will be made on the assumption that one pixel of the original image is read by one photodiode PD. However, the present invention is not limited to this. May read one pixel.

The transfer gate 24 used in the illustrated line CCD sensor 20 is for outputting the charge accumulated in each photodiode PD of the photodiode array 22 from each photodiode PD to the transfer path 26. , For example, a transistor for outputting a charge. The transfer path 26 transfers the electric charge supplied from the transfer gate (output transistor) 24 to an amplifier functioning as an output terminal, and is formed of, for example, an analog shift register. The line CCD sensor 20 may be of any type as long as it is a signal transfer type one-dimensional solid-state image sensor, and may be of any type. For example, a frame transfer type CCD may be used. Alternatively, an in-line transfer type CCD may be used.

Hereinafter, the operation of the image reading apparatus according to the present embodiment and the control method of the divided one-dimensional solid-state imaging device according to the second aspect of the present invention will be described. First, the operator sets the photographic film F on the film carrier 16 with the photographic film F sandwiched between the base 16a and the cover 16b of the film carrier 16, and mounts the film carrier 16 at a predetermined position on the image reading apparatus 10. Scanning of the photographic film F is performed twice: pre-scanning and main scanning. Prescan is
This scan is performed at a coarse resolution to set the scanning conditions and image processing conditions for the main scan.
This is reading for obtaining image data for print output. The pre-scan and the main scan may be performed one frame at a time, or may be performed continuously for all frames or predetermined plural frames, and are not particularly limited.

When the film carrier 16 is a photographic film F
Is transferred to a predetermined reading position of the image reading device 10, and the projected light of the photographic film F is focused on the line CCD sensor 20 to read the image. Here, the CCD projection area is determined by the relationship between the type of the photographic film and the print size. However, if the number of pixels in this CCD projection area is 4 × j or less, the middle of the photodiode array 22 is assumed. Can be read using only the four divided sections 22-3 to 22-6. At this time, the divided section of the number k of pixels at both ends is not used, and the divided section of the number j of pixels is rate-determining, and the reading time P × j is the line cycle.

For example, specifically, the line CCD sensor 2
The number of read pixels (size) of 0 is 5000 pixels in total, the type of the photographic film F is 135F, and the print size is the most common L size. At this time, as shown in FIG. 3A, the CCD projection area has 1741 pixels.
Therefore, when the photodiode array 22 is divided into eight, for example, if k = 814 and j = 436, 81
4 × 4 + 436 × 4 = 5000, and 436 × 4 = 1
744 pixels, so 4 of the middle j (= 436) pixels
Since the CCD projection area of 1741 pixels is included in one divided section, reading can be performed only in four sections having a small number of pixels.

FIG. 3 shows the number of pixels in the CCD projection area for other combinations of film types and print sizes.
FIG. 3G is shown from FIG. For example, as shown in FIG. 3B, even if the film type is 135F, the print size is 6F.
In the case of a single size, the CCD projection area is 3480 pixels, and if a line CCD sensor with the same division as described above is used, all sections must be used. In that case, a section having a large number of pixels and a number of pixels k is rate-limiting. If the reading time is to be further reduced, the division method (number of divisions,
It is necessary to change the number of pixels in each divided section). Also, as shown in FIG. 3C, when the film type is 135F and the print size is a panorama size, the CCD projection area is 1225 pixels. The number of pixels j = 436
Can be read using only the four divided sections. Even in this case, the method of division may be changed to read a projection area of 1225 pixels by a finer division section to improve the processing efficiency. In addition, FIG. 3 (d), FIG.
(E), FIG. 3 (f), and FIG. 3 (g), the film type and print size are 135F and 89m, respectively.
m width size, 135F and 89mm width panorama size, 1
In the case of 35F and A4 size, and 135F and A4 size, the CCD projection area has 1599 pixels and 9
Since the number of pixels is 96 pixels, 4545 pixels, and 3892 pixels, the reading time can be shortened in these cases by using section division suitable for each.

The arrangement of the divided sections of the photodiode array is not limited to the above-described example. For example, as shown in FIG. 4, divided sections having a small number of pixels and having a pixel number j (j ≦ k) may be used. It may be arranged at the left end. That is,
In the line CCD sensor 30 shown in FIG. 4, the photodiode array 32 is divided into eight sections, and the four left-side divided sections 32-1 to 32-4 are sections having a small number of pixels j, and the right side is divided into sections j. Four divided sections 32-5 to 32-8
Is a section of the number k of pixels having a large number of pixels. In this case, a section with a small number of pixels on the left side is used for a narrow CCD projection area. Here,
Reference numeral 34 indicates a transfer gate, and reference numeral 36
Is a transfer path, and reference numeral 38 is an amplifier serving as an output terminal.
4, the transfer path 26, and the amplifier 28 serving as an output terminal have the same functions as those of the amplifier 28, and a description thereof will be omitted.

As described above in detail, according to the present embodiment, the photodiode array of the line CCD sensor is divided into a plurality of divided sections having different numbers of pixels, and each divided section has a pixel reading transfer path and an amplifier. To read out the pixels from each section in parallel at the same time,
Furthermore, by shortening the imaging range of the CCD and using only the section having a small number of pixels, the reading time can be further reduced, and the reading cycle of one line can be shortened.
At this time, the arrangement of the divided sections is a line CCD.
In the case of the center reference of the sensor, a section having a small number of pixels is arranged near the center. When the end of the line CCD sensor is the reference, a section having a small number of pixels is arranged from the end.

In the example shown in FIG. 2 or FIG. 4 described above, the transfer path and the amplifier are arranged on one side of the photodiode array. The arrangement may be changed.
For example, the transfer path and the amplifier may be alternately distributed to both sides of the photodiode array.

Here, in the above-described embodiment, the signal transfer type line CCD sensor of the illustrated example is described as a representative example as the divided one-dimensional solid-state imaging device according to the present invention. However, the present invention is not limited to this. Any type of one-dimensional solid-state imaging device may be used as long as the one-dimensional solid-state imaging device applies the above-described division method. For example, the one-dimensional solid-state imaging device of the present invention may be an addressing one-dimensional solid-state imaging device such as a line MOS sensor. In the line MOS sensor of the addressing system, in the line CCD sensors 20 and 30 of the signal transfer system shown in FIGS. 2 and 4, instead of the transfer gate 24 composed of a charge output transistor,
MO that functions as a switching element (transistor)
Using an S transistor, a line CC
Instead of the analog shift register of the D sensor, a digital shift register for selecting a switching transistor (MOS transistor) of a photodiode for outputting the accumulated charge may be used. Illustration is omitted.

In addition to a line CCD sensor of a signal transfer system and a line MOS type sensor of an addressing system,
The divided one-dimensional solid-state imaging device according to the present invention further includes a line BBD (Bucket Brigade Dev) in addition to a line CCD sensor as a signal transfer type one-dimensional solid-state imaging device.
ice) sensor or the like, or a line CID (Charge I
njection Device) sensor and line PCD (Plasma C
oupled Device) A line CPD (Charge Priming Device) with features of both systems may be used.
Various one-dimensional solid-state imaging devices such as sensors may be used.

The divided one-dimensional solid-state imaging device such as the line CCD sensor and the MOS type sensor according to the present invention, the control method thereof, and the image reading apparatus using the same have been described in detail with reference to various embodiments. The present invention is not limited to the above-described embodiments, and various modifications and changes may be made without departing from the spirit of the present invention.

[0039]

As described above, according to the present invention, a photodiode array of a divided one-dimensional solid-state imaging device such as a line CCD sensor or a MOS sensor is divided into a plurality of sections having different numbers of pixels, and each section is divided into sections. By installing a transfer path and an amplifier for each pixel readout and reading pixels from each section in parallel at the same time, further reducing the imaging range to a solid-state imaging device such as a CCD and using only a section with a small number of pixels, This has made it possible to further shorten the read time and shorten the read cycle of one line.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram illustrating an embodiment of an image reading apparatus according to the present invention.

FIG. 2 is a schematic diagram illustrating a configuration of an embodiment of a line CCD sensor according to the present invention.

FIGS. 3A to 3G are explanatory diagrams each showing a CCD projection area corresponding to a film type and a print size.

FIG. 4 is a schematic view showing another embodiment of the line CCD sensor according to the present invention.

FIG. 5 is a schematic diagram showing a configuration of a conventional line CCD sensor.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Image reading device 12 Light source 14 Reflector 16 Film carrier 18 Lens 20, 30 Line CCD sensor 22, 32 Photodiode array 24, 34 Transfer gate 26, 36 Transfer path 28, 38 Amplifier (output terminal)

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5B047 AA05 AB04 BA01 BB02 BC01 BC05 BC11 BC14 CA05 CA14 5C024 DX04 EX01 GX03 GX16 HX57 5C051 AA01 BA03 DA03 DB01 DB08 DB22 DB28 DC02 DC03 DC07 DE02 5C062 AA05 AB03 AB17 AB04

Claims (7)

[Claims] 1. A photodiode array in which photodiodes of respective pixels are arranged in a line, an output transistor that outputs electric charge from each photodiode of the photodiode array, and an electric charge supplied from the output transistor is transferred to an output terminal. The photodiode array is divided into a plurality of divided sections having a different number of pixels in the alignment direction, and the transfer path corresponding to each divided section is provided. A divided one-dimensional solid-state imaging device comprising: a plurality of output terminals; and a plurality of pixel columns in each of the divided sections that are read in parallel from the output terminal corresponding to each of the divided sections. 2. The method according to claim 1, wherein the one-dimensional solid-state imaging device is a signal transfer system, the output transistor is a transfer gate, and the transfer path is an analog shift register.
2. The divided one-dimensional solid-state imaging device according to 1. 3. The one-dimensional solid-state imaging device is a line CCD.
The divided one-dimensional solid-state imaging device according to claim 1, which is a sensor. 4. The digital shifter according to claim 1, wherein the one-dimensional solid-state imaging device is an addressing system, the output transistor is a switching transistor, and the transfer path selects a switching transistor of the photodiode for outputting the charge. The divided one-dimensional solid-state imaging device according to claim 1, which is a register. 5. The digital shifter according to claim 1, wherein the one-dimensional solid-state imaging device is a MOS sensor, the output transistor is a MOS transistor, and the transfer path selects a MOS transistor of the photodiode that outputs the charge. 5. The divided one-dimensional solid-state imaging device according to claim 1, which is a register. 6. A control method when an image is read by the divided one-dimensional solid-state imaging device according to claim 1, wherein, among the divided sections, the divided section having a smaller number of pixels is used as the photo-division. For reading an image having a narrow projection area, the reading is performed using only a divided section having a small number of pixels concentrated in a part of the diode array in the alignment direction. A method for controlling a divided one-dimensional solid-state imaging device, wherein the method is performed. 7. An image reading apparatus, wherein the divided one-dimensional solid-state imaging device according to claim 1 is used in an image reading section for photoelectrically reading an image photographed on a photographic film. .