JP2002110886A - Lead frame for semiconductor device and semiconductor device using the same - Google Patents
Lead frame for semiconductor device and semiconductor device using the sameInfo
- Publication number
- JP2002110886A JP2002110886A JP2000293379A JP2000293379A JP2002110886A JP 2002110886 A JP2002110886 A JP 2002110886A JP 2000293379 A JP2000293379 A JP 2000293379A JP 2000293379 A JP2000293379 A JP 2000293379A JP 2002110886 A JP2002110886 A JP 2002110886A
- Authority
- JP
- Japan
- Prior art keywords
- island portion
- semiconductor device
- lead frame
- sealing resin
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W72/5449—
-
- H10W90/756—
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】
【課題】 粘度の高い封止用樹脂を用いたときでも、ア
イランド部の裏面が封止体の表面に完全に露出する半導
体装置用リードフレームを提供する。
【解決手段】 アイランド部11から延出する支持バー
12の少なくともアイランド部側基端部に、封止用樹脂
が流通する開口部10を形成する。ここでアイランド部
裏面の封止体表面への露出をより確実にするためには、
開口部10の幅は0.15mm以上とするのが好まし
い。
(57) [Problem] To provide a semiconductor device lead frame in which the back surface of an island portion is completely exposed to the surface of a sealing body even when a high-viscosity sealing resin is used. SOLUTION: An opening 10 through which a sealing resin flows is formed at least at a base end portion on the island portion side of a support bar 12 extending from the island portion 11. Here, in order to more reliably expose the back surface of the island portion to the surface of the sealing body,
The width of the opening 10 is preferably 0.15 mm or more.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体装置用リー
ドフレーム(以下、単に「リードフレーム」と記すこと
がある)および半導体装置に関し、より詳細には半導体
素子を搭載したアイランド部の裏面が封止体表面に露出
したパッケージ型半導体装置に用いるリードフレームお
よびそれを用いた半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device lead frame (hereinafter sometimes simply referred to as "lead frame") and a semiconductor device, and more particularly, to a back surface of an island portion on which a semiconductor element is mounted. The present invention relates to a lead frame used for a package type semiconductor device exposed on the surface of a stationary body and a semiconductor device using the same.
【0002】[0002]
【従来の技術】集積度の向上や利用分野の拡大などに対
応するため種々のパッケージ型半導体装置が近年開発さ
れている。このパッケージ型半導体装置において、半導
体素子の高集積化および多機能化をさらに進める上で、
半導体素子の発熱をいかに効率よく外部へ放散するかが
新たな課題となっていた。すなわち、パッケージ型半導
体装置では一般に、エポキシ樹脂などの熱伝導率の低い
封止用樹脂を用いて半導体素子を封止していたため、高
集積化および多機能化に伴って増加する半導体素子の発
熱量を外部へ充分に放熱できなかったのである。そこ
で、半導体素子を搭載する、リードフレームのアイラン
ド部の底面を封止用樹脂からなる封止体表面に露出させ
て、半導体素子の発熱をアイランド部を介し外部へ直接
放熱する形態が考えられた。2. Description of the Related Art In recent years, various package-type semiconductor devices have been developed in order to cope with an improvement in the degree of integration and an expansion of fields of use. In this package type semiconductor device, in order to further increase the degree of integration and multifunctionality of the semiconductor element,
How to efficiently dissipate the heat generated by the semiconductor element to the outside has been a new issue. That is, in the package type semiconductor device, the semiconductor element is generally sealed with a sealing resin having a low thermal conductivity such as an epoxy resin, so that the heat generated by the semiconductor element increases with higher integration and multifunctionality. The amount could not be sufficiently dissipated to the outside. Therefore, a form in which the bottom surface of the island portion of the lead frame on which the semiconductor element is mounted is exposed to the surface of the sealing body made of a sealing resin and heat generated by the semiconductor element is directly radiated to the outside through the island portion has been considered. .
【0003】リードフレームのアイランド部底面を封止
体から露出させたパッケージ型半導体装置は、概ね次の
ようにして製造されていた。まず、薄い金属板などの導
電性金属材料をプレス加工により打ち抜いて所望の形状
のリードフレームを形成する。リードフレームの一例を
示す平面図を図5に示す。リードフレーム1は、アイラ
ンド部11と、アイランド11の4つの角から延出した
支持バー12と、アイランド部11に向かって延びる多
数本のインナーリード13と、アウターリード14と、
インナリード13およびアウタリード14の間にあって
これらのリード群を支持するタイバー15とを有する。
インナーリード13の先端部をAgなどでメッキして電
極部17を形成した後、後述する封止工程における下型
の深さ分だけアイランド部11を押し下げて、リードフ
レーム1を部分的に凹状とする。そしてアイランド部1
1に半導体素子2を搭載し、半導体素子2のパッド21
とインナーリード13の電極部17とを金属細線(ワイ
ヤ)3で電気的に接続する。なお、図5では便宜上、パ
ッド21と電極部17の一部についてのみワイヤ3で接
続したものを示している。A package type semiconductor device in which a bottom surface of an island portion of a lead frame is exposed from a sealing body has been generally manufactured as follows. First, a conductive metal material such as a thin metal plate is punched out by press working to form a lead frame having a desired shape. FIG. 5 is a plan view showing an example of the lead frame. The lead frame 1 includes an island portion 11, a support bar 12 extending from four corners of the island 11, a number of inner leads 13 extending toward the island portion 11, an outer lead 14,
A tie bar 15 is provided between the inner lead 13 and the outer lead 14 to support these lead groups.
After the tip portion of the inner lead 13 is plated with Ag or the like to form the electrode portion 17, the island portion 11 is pushed down by the depth of the lower die in a sealing step described later, so that the lead frame 1 is partially concave. I do. And island part 1
1, the semiconductor element 2 is mounted, and the pad 21 of the semiconductor element 2 is mounted.
And the electrode portion 17 of the inner lead 13 are electrically connected by a thin metal wire (wire) 3. In FIG. 5, for convenience, only the pad 21 and a part of the electrode unit 17 are connected by the wire 3.
【0004】次に、半導体素子2を搭載したアイランド
部11、インナーリード13を樹脂で封止する。図6
に、リードフレームをキャビティに設置した状態の図1
のA−A線断面図を示す。図6(a)において、所定の
パッケージ形状に合わせて形成された、上型41と下型
42とからなるキャビティ内に、半導体素子2を搭載し
たアイランド部11の底面が下型42の底面に接するよ
うにリードフレームを装着する。そして図6(b)にお
いて、所定温度に加熱したキャビティ内に図の右方向
(図5の矢印方向)から封止用樹脂を注入して、キャビ
ティ内を封止用樹脂で充填した後、封止用樹脂を硬化さ
せる。図6(c)において、作製したパッケージ型半導
体装置の中間体をキャビティから取り出し、タイバー1
5や封止体16から突出する支持バー12などの不要部
分を切断除去すると同時に、インナーリード13が延長
された封止体16の外側のアウターリード14を所定形
状に屈曲させて、製品としてのパッケージ型半導体装置
としていた。Next, the island portion 11 on which the semiconductor element 2 is mounted and the inner lead 13 are sealed with a resin. FIG.
Fig. 1 with the lead frame installed in the cavity
2 is a sectional view taken along line AA of FIG. In FIG. 6A, the bottom surface of the island portion 11 on which the semiconductor element 2 is mounted is placed in the cavity of the upper die 41 and the lower die 42 formed according to the predetermined package shape. Attach the lead frame so that it touches. In FIG. 6B, a sealing resin is injected into the cavity heated to a predetermined temperature from the right side of the drawing (the direction of the arrow in FIG. 5), and the cavity is filled with the sealing resin. The stopping resin is cured. In FIG. 6C, the intermediate body of the manufactured package type semiconductor device is taken out of the cavity, and the tie bar 1 is removed.
At the same time as cutting and removing unnecessary parts such as the support bar 12 protruding from the sealing body 16 and the outer lead 14 outside the sealing body 16 with the inner lead 13 extended, the outer lead 14 is bent into a predetermined shape, and It was a package type semiconductor device.
【0005】[0005]
【発明が解決しようとする課題】このようなパッケージ
型半導体装置の製造工程において、キャビティ内に封止
用樹脂を充填する際に、封止用樹脂が支持バーを上方向
に持ち上げることがあった。図7に、封止用樹脂の充填
時の流動状態を示す概説図を示す。エポキシ樹脂などの
比較的粘度の高い封止用樹脂5が、樹脂注入口43から
キャビティ内に注入されると、封止用樹脂5は傾斜に沿
って下型42の底面に至り、さらに底面を這うように流
れていく。そして封止用樹脂5が支持バー12と接触す
ると、封止用樹脂5の流動する力により支持バー12は
上方向に押し上げられる。これによりアイランド部11
が浮き上がって、アイランド部11と下型42の底面と
の間に隙間ができ、そこに封止用樹脂5が侵入する結
果、成形された封止体の表面にアイランド部11の裏面
が完全には露出しないという問題があった。In the process of manufacturing such a package type semiconductor device, when the sealing resin is filled in the cavity, the sealing resin may lift the support bar upward. . FIG. 7 is a schematic diagram showing a flow state when the sealing resin is filled. When the sealing resin 5 having a relatively high viscosity, such as an epoxy resin, is injected into the cavity from the resin injection port 43, the sealing resin 5 reaches the bottom surface of the lower mold 42 along the slope, and further the bottom surface is formed. It flows as if crawling. When the sealing resin 5 comes into contact with the support bar 12, the support bar 12 is pushed upward by the flowing force of the sealing resin 5. Thereby, the island portion 11
Is raised, a gap is formed between the island portion 11 and the bottom surface of the lower mold 42, and the sealing resin 5 penetrates there. As a result, the back surface of the island portion 11 is completely formed on the surface of the molded body. There was a problem that was not exposed.
【0006】本発明は、このような従来の問題に鑑みて
なされたものであり、粘度の高い封止用樹脂を用いたと
きでも、アイランド部の裏面が封止体の表面に完全に露
出する半導体装置用リードフレームを提供することをそ
の目的とするものである。The present invention has been made in view of such a conventional problem. Even when a high-viscosity sealing resin is used, the back surface of the island portion is completely exposed to the surface of the sealing body. It is an object of the present invention to provide a lead frame for a semiconductor device.
【0007】また本発明の他の目的は、半導体素子を搭
載したアイランド部が封止体表面に完全に露出され、半
導体素子の発熱を効率的に外部へ放散する半導体装置を
提供することにある。Another object of the present invention is to provide a semiconductor device in which an island portion on which a semiconductor element is mounted is completely exposed to the surface of a sealing body, and heat generated by the semiconductor element is efficiently radiated to the outside. .
【0008】[0008]
【課題を解決するための手段】本発明によれば、半導体
素子を搭載したアイランド部の裏面が封止体表面に露出
したパッケージ型半導体装置に用いるリードフレームに
おいて、前記アイランド部から延出する支持バーの少な
くともアイランド部側基端部に、封止用樹脂が流通する
開口部を形成したことを特徴とする半導体装置用リード
フレームが提供される。According to the present invention, in a lead frame for use in a package type semiconductor device in which the back surface of an island portion on which a semiconductor element is mounted is exposed on the surface of a sealing body, a support extending from the island portion is provided. There is provided a lead frame for a semiconductor device, wherein an opening through which a sealing resin flows is formed at least at a base end on the island portion side of the bar.
【0009】アイランド部裏面の封止体表面への露出を
より確実にするためには、前記開口部の幅及び長さは
0.15mm以上とするのが好ましい。In order to more reliably expose the back surface of the island portion to the surface of the sealing body, the width and length of the opening are preferably 0.15 mm or more.
【0010】また本発明によれば、リードフレームとし
て請求項1又は2記載のリードフレームを用い、アイラ
ンド部及び半導体素子を封止用樹脂で封止し、封止体表
面にアイランド部の裏面を露出させたことを特徴とする
半導体装置が提供される。According to the present invention, the island portion and the semiconductor element are sealed with a sealing resin using the lead frame according to claim 1 or 2 as a lead frame, and the back surface of the island portion is formed on the surface of the sealing body. A semiconductor device characterized by being exposed is provided.
【0011】[0011]
【発明の実施の形態】本発明者等は、封止用樹脂による
支持バーの押し上げを防止すべく鋭意検討を重ねた結
果、支持バーに開口部を設けることにより、封止用樹脂
が支持バーを押し上げる力そのものを小さくでき、また
同時にアイランド部上への封止用樹脂の流動を促進させ
て、アイランド部が浮かないように重石として封止用樹
脂を作用させられることを見出し本発明をなすに至っ
た。BEST MODE FOR CARRYING OUT THE INVENTION The inventors of the present invention have conducted intensive studies to prevent the support bar from being pushed up by the sealing resin. As a result, by providing an opening in the support bar, the sealing resin is supported. The present invention has been found to be able to reduce the force itself for pushing up the resin, and at the same time, to promote the flow of the sealing resin onto the island portion, and to allow the sealing resin to act as a weight so that the island portion does not float. Reached.
【0012】すなわち本発明の半導体装置用リードフレ
ームの大きな特徴は、支持バーの少なくともアイランド
部側基端部に封止用樹脂が流通する開口部を形成した点
にある。本発明のリードフレームの一実施態様を示す部
分平面図を図1に示す。図1は、アイランド部11を押
し下げる前の、平面状のリードフレームの部分平面図で
ある。アイランド部11の4隅から延出する4本の支持
バー12のうち、封止用樹脂の注入口側の支持バー12
のアイランド部側基端部に矩形状の開口部10が形成さ
れている。開口部10は、封止用樹脂の注入口側の支持
バーに少なくとも形成されていればよく、他の支持バー
に形成されていてももちろん構わない。That is, a major feature of the semiconductor device lead frame of the present invention resides in that an opening through which a sealing resin flows is formed at least at the base end of the support bar on the island side. FIG. 1 is a partial plan view showing one embodiment of the lead frame of the present invention. FIG. 1 is a partial plan view of a planar lead frame before the island portion 11 is pushed down. Of the four support bars 12 extending from the four corners of the island portion 11, the support bar 12 on the injection port side of the sealing resin is provided.
A rectangular opening 10 is formed at the base end on the island portion side. The opening 10 only needs to be formed at least in the support bar on the injection port side of the sealing resin, and may of course be formed in another support bar.
【0013】このリードフレームのアイランド部11を
押し下げ、上型41と下型42とで形成されたキャビテ
ィ内に装着したときの部分断面図を図2に示す。樹脂注
入口43から注入された封止用樹脂5は下型42の斜面
および底面に沿って流動しアイランド部11に至り、ア
イランド部11の支持バー12の付け根部分にまず最初
に接触する。そして支持バー12の付け根部分、すなわ
ち支持バー12のアイランド部基端部に、形成された開
口部10を通って封止用樹脂5はアイランド部11の上
に流れ込む。流れ込んだ封止用樹脂5は重石として作用
し、アイランド部11が浮き上がるのを抑える。また同
時に支持バー12に開口部10が形成されていることに
より封止用樹脂5による支持バー12の押し上げ力が軽
減され、アイランド部11の浮き上がりが一層抑えられ
る。FIG. 2 is a partial cross-sectional view when the island portion 11 of the lead frame is pushed down and mounted in the cavity formed by the upper die 41 and the lower die 42. The sealing resin 5 injected from the resin injection port 43 flows along the slope and the bottom surface of the lower mold 42, reaches the island portion 11, and first contacts the base portion of the support bar 12 of the island portion 11. The sealing resin 5 flows into the island portion 11 through the opening 10 formed at the base of the support bar 12, that is, at the base end of the island portion of the support bar 12. The flowing sealing resin 5 acts as a weight, and suppresses the island portion 11 from floating. At the same time, since the opening 10 is formed in the support bar 12, the pushing force of the sealing resin 5 on the support bar 12 is reduced, and the floating of the island portion 11 is further suppressed.
【0014】開口部10は、支持バー12の少なくとも
アイランド部側基端部に形成されていればよく、例えば
図3に示すように、アイランド部11に入り込んで開口
部10を形成してもよい(同図(a))。また支持バー
12の長手方向全体にわたって一つの開口部10(同図
(b))、あるいは複数の開口部10を形成してもよい
(同図(c))。The opening 10 only needs to be formed at least at the base end of the support bar 12 on the island portion side. For example, as shown in FIG. 3, the opening portion 10 may be formed by entering the island portion 11. (FIG. 7A). Further, one opening 10 (FIG. 2B) or a plurality of openings 10 may be formed over the entire length of the support bar 12 (FIG. 2C).
【0015】なお、図3(b)に示したリードフレーム
を用いて半導体装置を製造した場合、封止体形成後に封
止体から延びる支持バーは切断除去されるので、完成し
た半導体装置のリードフレームを見ると、開口部ではな
く矩形状の細長の切り欠きが支持バーに形成されている
形態、換言すれば細長い2本の支持バーがアイランド部
の一端から延出している形態として残存することになる
が、このような半導体装置であっても本発明の半導体装
置にもちろん含まれる。When a semiconductor device is manufactured using the lead frame shown in FIG. 3B, the support bar extending from the sealing body is cut and removed after the formation of the sealing body. Looking at the frame, there is a form in which a rectangular elongated notch is formed in the support bar instead of the opening, in other words, a form in which two elongated support bars extend from one end of the island portion. However, even such a semiconductor device is included in the semiconductor device of the present invention.
【0016】また、開口部10の形状に特に限定はな
く、支持バー12の形状などを考慮し適宜決定すればよ
い。図4に開口部の他の形状を示すと、図4の支持バー
12の基端部は末広がり状であるので、同図(a)では
開口部10を三角形とし、同図(b)では台形としてい
る。The shape of the opening 10 is not particularly limited, and may be appropriately determined in consideration of the shape of the support bar 12 and the like. FIG. 4 shows another shape of the opening. Since the base end of the support bar 12 in FIG. 4 is divergent, the opening 10 is triangular in FIG. 4A and trapezoidal in FIG. And
【0017】開口部の大きさとしては、封止用樹脂が円
滑に通過できる大きさであれば特に限定はなく、封止用
樹脂の種類などから適宜決定すればよい。封止用樹脂と
しては一般に、球状シリカからなるフィラーとエポキシ
樹脂とを重量比で8:2程度に混合したものが用いられ
る。ここで使用する球状シリカの平均粒径は20μm程
度であるから、開口部の幅および高さとしてはいずれも
最低20μmあればよいが、球状シリカの粒度分布を考
慮して最大粒径である150μm(0.15mm)以上
とするのが開口部での詰まり防止の観点から好ましい。
より好ましい開口部の幅および高さは200μm(0.
2mm)以上である。なお、開口部周縁の支持バーの幅
は、加工精度および強度の点から0.1mm以上とする
のが望ましい。The size of the opening is not particularly limited as long as the sealing resin can smoothly pass through the opening, and may be appropriately determined based on the type of the sealing resin. As the sealing resin, generally, a mixture of a filler made of spherical silica and an epoxy resin in a weight ratio of about 8: 2 is used. Since the average particle size of the spherical silica used here is about 20 μm, the width and the height of the opening may be at least 20 μm, but the maximum particle size is 150 μm in consideration of the particle size distribution of the spherical silica. (0.15 mm) or more is preferable from the viewpoint of preventing clogging at the opening.
More preferably, the width and height of the opening are 200 μm (0.
2 mm) or more. The width of the support bar at the periphery of the opening is desirably 0.1 mm or more from the viewpoint of processing accuracy and strength.
【0018】このような開口部の形成方法としては特に
限定はなく、打ち抜き処理やエッチング処理など従来公
知の形成方法を用いることができる。金属薄板をプレス
加工により打ち抜いてリードフレームを形成する場合に
は、リードフレーム形成時に同時に開口部も形成するの
が生産効率の点から望ましい。The method of forming such an opening is not particularly limited, and a conventionally known forming method such as a punching process or an etching process can be used. When a lead frame is formed by punching a thin metal plate by pressing, it is desirable to form an opening at the same time as forming the lead frame from the viewpoint of production efficiency.
【0019】[0019]
【発明の効果】本発明の半導体装置用リードフレームで
は、アイランド部から延出する支持バーの少なくともア
イランド部側基端部に、封止用樹脂が流通する開口部を
形成したので、粘度の高い封止用樹脂を用いたときで
も、封止用樹脂により支持バーが押し上げられることが
なく、アイランド部の裏面を封止体の表面に完全に露出
させることができる。According to the lead frame for a semiconductor device of the present invention, since the opening through which the sealing resin flows is formed at least at the base end on the island portion side of the support bar extending from the island portion, high viscosity is obtained. Even when the sealing resin is used, the support bar is not pushed up by the sealing resin, and the back surface of the island portion can be completely exposed to the surface of the sealing body.
【0020】また開口部の幅を0.15mm以上とすれ
ば、アイランド部裏面の封止体表面への露出をより確実
にすることができる。When the width of the opening is 0.15 mm or more, the back surface of the island portion can be more reliably exposed to the surface of the sealing body.
【0021】また本発明の半導体装置では、リードフレ
ームとして前記リードフレームを用い、アイランド部及
び半導体素子を封止用樹脂で封止し、半導体素子を搭載
したアイランド部の裏面が封止体表面に完全に露出され
るので、半導体素子の発熱を効率的に外部へ放散するこ
とができる。In the semiconductor device of the present invention, the lead frame is used as a lead frame, the island portion and the semiconductor element are sealed with a sealing resin, and the back surface of the island portion on which the semiconductor element is mounted is on the surface of the sealing body. Since the semiconductor device is completely exposed, heat generated by the semiconductor element can be efficiently dissipated to the outside.
【図1】 本発明のリードフレームの一実施形態を示す
部分平面図である。FIG. 1 is a partial plan view showing one embodiment of a lead frame of the present invention.
【図2】 キャビティ内の封止用樹脂の流れを説明する
ための図である。FIG. 2 is a diagram for explaining a flow of a sealing resin in a cavity.
【図3】 開口部の形態の一例を示す図である。FIG. 3 is a diagram showing an example of a form of an opening.
【図4】 開口部の形状の一例を示す図である。FIG. 4 is a diagram showing an example of the shape of an opening.
【図5】 従来のリードフレームの平面図である。FIG. 5 is a plan view of a conventional lead frame.
【図6】 封止工程を示す図である。FIG. 6 is a view showing a sealing step.
【図7】 封止用樹脂による支持バーの押し上げを説明
するための図である。FIG. 7 is a diagram for explaining pushing up of a support bar by a sealing resin.
1 リードフレーム 2 半導体素子 5 封止用樹脂 10 開口部 11 アイランド部 12 支持バー 16 封止体 DESCRIPTION OF SYMBOLS 1 Lead frame 2 Semiconductor element 5 Sealing resin 10 Opening 11 Island part 12 Support bar 16 Sealing body
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4M109 AA01 BA01 DB03 FA03 5F061 AA01 BA01 CA21 DD12 5F067 AA03 AB03 BD00 BD05 CA04 DF17 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M109 AA01 BA01 DB03 FA03 5F061 AA01 BA01 CA21 DD12 5F067 AA03 AB03 BD00 BD05 CA04 DF17
Claims (3)
面が封止体表面に露出したパッケージ型半導体装置に用
いるリードフレームにおいて、 前記アイランド部から延出する支持バーの少なくともア
イランド部側基端部に、封止用樹脂が流通する開口部を
形成したことを特徴とする半導体装置用リードフレー
ム。1. A lead frame for use in a package type semiconductor device in which a back surface of an island portion on which a semiconductor element is mounted is exposed on a surface of a sealing body, wherein at least a base end of a support bar extending from the island portion on the island portion side is provided. A lead frame for a semiconductor device, wherein an opening through which a sealing resin flows is formed.
以上である請求項1記載の半導体装置用リードフレー
ム。2. The width and the length of the opening are 0.15 mm.
2. The lead frame for a semiconductor device according to claim 1, wherein:
載のリードフレームを用い、アイランド部及び半導体素
子を封止用樹脂で封止し、封止体表面に前記アイランド
部の裏面を露出させたことを特徴とする半導体装置。3. An island portion and a semiconductor element are sealed with a sealing resin using the lead frame according to claim 1 as a lead frame, and a back surface of the island portion is exposed on a surface of a sealing body. A semiconductor device characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000293379A JP4611503B2 (en) | 2000-09-27 | 2000-09-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000293379A JP4611503B2 (en) | 2000-09-27 | 2000-09-27 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002110886A true JP2002110886A (en) | 2002-04-12 |
| JP4611503B2 JP4611503B2 (en) | 2011-01-12 |
Family
ID=18776185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000293379A Expired - Fee Related JP4611503B2 (en) | 2000-09-27 | 2000-09-27 | Semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP4611503B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7589399B2 (en) | 2005-08-26 | 2009-09-15 | Sharp Kabushiki Kaisha | Semiconductor device, lead frame used in the semiconductor device and electronic equipment using the semiconductor device |
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| JPH10189856A (en) * | 1996-12-27 | 1998-07-21 | Nec Corp | Resin-sealed semiconductor device |
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| JPH11284121A (en) * | 1998-03-27 | 1999-10-15 | Mitsubishi Electric Corp | Semiconductor device and lead frame for semiconductor device |
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|---|---|---|---|---|
| JPS634658A (en) * | 1986-06-25 | 1988-01-09 | Hitachi Ltd | Electronic device |
| JPH06268142A (en) * | 1993-03-16 | 1994-09-22 | Fujitsu Ltd | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7589399B2 (en) | 2005-08-26 | 2009-09-15 | Sharp Kabushiki Kaisha | Semiconductor device, lead frame used in the semiconductor device and electronic equipment using the semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4611503B2 (en) | 2011-01-12 |
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