JP2002190630A - Magnetoresistive element, magnetic head, magnetic recording device, and memory element - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To provide a magnetoresistive element with an exchange coupling film having excellent thermal stability. SOLUTION: A magnetoresistance effect element 100 has a free layer 101 whose magnetization is easily rotated by an external magnetic field, and a nonmagnetic layer 10.
3 and a fixed layer 102 provided on the free layer 101 side with respect to the nonmagnetic layer 103 and whose magnetization is not easily rotated by an external magnetic field.
And the fixed layer 102 includes a first layer
A first non-magnetic film for exchange coupling, including a non-magnetic film for exchange coupling 104 and first and second magnetic films 105 and 106 antiferromagnetically exchange-coupled via the first non-magnetic film for exchange coupling 104; The film 104 contains an oxide of any of Ru, Ir, Rh, and Re.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a thermally stable magnetoresistive magnetoresistive element, a magnetic head using the same, a magnetic recording device, and a magnetoresistive memory element.

[0002]

2. Description of the Related Art In recent years, ferromagnetic layers (free layers) / non-magnetic layers /
In a magnetoresistive element including a ferromagnetic layer (fixed layer), GMR research using a metal film such as Cu for the nonmagnetic layer, and use of an insulating film such as Al ₂ O _{3 for the} nonmagnetic layer Research on a tunnel-type magnetoresistive element called TMR has been active (Journal of Ma).
gnetism and Magnetic Mate
reals 139 (1995) L231). This G
MR and TMR are being studied for application to magnetic heads and memory elements (2000 IEEE ISS
CC TA 7.2, TA 7.3). GMR has already been applied to magnetic heads. TMR is about 40 at room temperature.
%, And high output is expected.

However, since such a magnetoresistive element is a laminated film having a thickness of several nm, it has a temperature of 250.degree.
At a temperature of 0 ° C. or higher, there is a problem that interface diffusion occurs and its characteristics deteriorate. In particular, the fixed layer is made of Mn such as FeMn or IrMn.
In a magnetoresistive element including an n-containing antiferromagnetic film and a ferromagnetic film exchange-coupled via the n-ferromagnetic film, there is a problem that when the temperature exceeds 250 ° C., the Mn is diffused and its characteristics are deteriorated.

[0004] As a method for solving this problem, there is provided a ferromagnetic film in which a fixed layer is antiferromagnetically exchange-coupled through a nonmagnetic film for exchange coupling containing Ru, Ir, Rh or the like. An attempt has been made to stop the diffusion of Mn by Ru, Ir, Rh or the like by adopting a structure of “/ non-magnetic film for exchange coupling / ferromagnetic film”.

[0005]

However, the non-magnetic film for exchange coupling used in this case has a thickness of 0.6 to 0.5.
Since it is about 8 nm, at 300 ° C. or higher, diffusion occurs at the interface of the exchange-coupling nonmagnetic film, and the characteristics are deteriorated.

[0006] The present invention improves the problem of thermal stability and improves the stability.
A magnetoresistive element exhibiting stable characteristics even at 00 ° C.
An object is to provide a magnetic head, a magnetic recording device, and a memory element using the same.

[0007]

A magnetoresistive element according to the present invention is provided with a free layer which is easily rotated by an external magnetic field, a non-magnetic layer, and a non-magnetic layer provided on a side opposite to the free layer. And a fixed layer that is not easily rotated by an external magnetic field. The fixed layer includes a first exchange-coupling non-magnetic film and a first exchange-coupling non-magnetic film. First and second magnetic films anti-ferromagnetically exchange-coupled, wherein the first non-magnetic film for exchange coupling is Ru, Ir,
The above object is achieved by including an oxide of either Rh or Re.

[0008] The magnetoresistance effect element may be a tunnel type magnetoresistance effect element.

An antiferromagnetic film magnetically exchange-coupled with the fixed layer may be further included.

The free layer includes a second non-magnetic film for exchange coupling, and third and fourth magnetic films anti-ferromagnetically exchange-coupled via the second non-magnetic film for exchange coupling. The second non-magnetic film for exchange coupling contains any oxide of Ru, Ir, Rh, and Re, and the magnetization of the third and fourth magnetic films is M
1, M2 and the film thicknesses are t1 and t2, and their products M
1 · t1 and M2 · t2 may be substantially different.

At least one of the first to fourth magnetic films may contain Co as a main component and B as a main component.

At least one of the first and second magnetic films
First, Co may contain B as a main component.

An antiferromagnetic film magnetically exchange-coupled to the fixed layer, and a base film mainly composed of NiFeCr and provided on a side opposite to the fixed layer with respect to the antiferromagnetic film. Is also good.

According to another aspect of the present invention, there is provided a magnetoresistive element having a free layer which is easily magnetized and rotated by an external magnetic field, a nonmagnetic layer, and a nonmagnetic layer provided on a side opposite to the free layer. A magnetoresistive effect element including a fixed layer that does not easily rotate in magnetization, wherein the free layer is antiferromagnetic via a first non-magnetic film for exchange coupling and the first non-magnetic film for exchange coupling. First and second magnetic films exchange-coupled to each other, wherein the first non-magnetic film for exchange coupling contains any oxide of Ru, Ir, Rh, and Re, and the first and second magnetic films Where M1 and M2 are magnetizations and t1 and t2 are film thicknesses, the respective products M1 · t1 and M2 · t2 are substantially different, thereby achieving the above object.

The magnetoresistive element may be a tunnel type magnetoresistive element.

An antiferromagnetic film magnetically exchange-coupled with the fixed layer, and a base film mainly composed of NiFeCr and provided on the opposite side of the antiferromagnetic film from the fixed layer may be further included. .

A magnetic head according to the present invention is a magnetic head for detecting a signal magnetic field from a recording medium, and includes two shield portions including a magnetic material and a magnetic head provided in a gap between the two shield portions. The magneto-resistance effect element of the invention is provided, whereby the above object is achieved.

Another magnetic head according to the present invention includes a magnetic flux guide portion including a magnetic material, and a magnetoresistive element according to the present invention for detecting a signal magnetic field guided by the magnetic flux guide portion.
Thereby, the above object is achieved.

A magnetic recording apparatus according to the present invention includes a magnetic head of the present invention for recording a signal on a recording medium, an arm on which the magnetic head is mounted, a driving unit for driving the arm, and a processor for processing the signal. A signal processing section for supplying the magnetic head, whereby the above object is achieved.

The magnetoresistive effect memory element according to the present invention has a free layer that is easily magnetized and rotated by an external magnetic field, a nonmagnetic layer, and is provided on a side opposite to the free layer with respect to the nonmagnetic layer, and is easily provided by an external magnetic field. A magneto-resistance effect element including a fixed layer that does not rotate in magnetization, wherein the fixed layer has a non-magnetic film for exchange coupling, and a non-magnetic film for exchange coupling anti-ferromagnetically via the non-magnetic film for exchange coupling. A non-magnetic film for exchange coupling, wherein the non-magnetic film for exchange coupling includes a magnetoresistive element including any oxide of Ru, Ir, Rh, and Re; A word line for generating a magnetic field and a sense line for detecting a change in resistance of the magnetoresistive element are provided, thereby achieving the above object.

[0021] The magnetoresistive element may further include an antiferromagnetic film magnetically exchange-coupled with the fixed layer.

The free layer includes a second non-magnetic film for exchange coupling, and third and fourth magnetic films anti-ferromagnetically exchange-coupled via the second non-magnetic film for exchange coupling. The second non-magnetic film for exchange coupling contains any oxide of Ru, Ir, Rh, and Re, and the magnetization of the third and fourth magnetic films is M
1, M2 and the film thicknesses are t1 and t2, and their products M
1 × t1 and M2 × t2 may be substantially different.

At least one of the first to fourth magnetic films may contain Co as a main component and B.

At least one of the first and second magnetic films
First, Co may contain B as a main component.

The magnetoresistive element includes an antiferromagnetic film magnetically exchange-coupled to the fixed layer, and a base film provided on the opposite side of the antiferromagnetic film from the fixed layer and containing NiFeCr as a main component. May be further included.

Another magnetoresistive effect memory element according to the present invention comprises a free layer which is easily rotated by an external magnetic field, a non-magnetic layer, and an external magnetic field provided on the opposite side of the non-magnetic layer from the free layer. Wherein the free layer comprises a first non-magnetic film for exchange coupling and an anti-ferromagnetic material via the first non-magnetic film for exchange coupling. Exchange-coupled first and second magnetic films, wherein the first non-magnetic film for exchange coupling is Ru, Ir, Rh,
When any one of the oxides of Re is contained and the magnetizations of the first and second magnetic films are M1 and M2 and the thicknesses thereof are t1 and t2, the respective products M1 × t1 and M2 × t2 are substantially different. A magnetoresistive element, a word line for generating a magnetic field for causing the magnetization reversal of the free layer, and a sense line for detecting a change in resistance of the magnetoresistive element, whereby the object is achieved. .

The magnetoresistive element may include an antiferromagnetic film magnetically exchange-coupled to the fixed layer, and a base film provided on the opposite side of the antiferromagnetic film from the fixed layer and containing NiFeCr as a main component. May be further included.

The memory element according to the present invention is constituted by arranging the magnetoresistive effect memory elements according to the present invention in a matrix, thereby achieving the above object.

The magnetoresistive element includes an antiferromagnetic film magnetically exchange-coupled to the fixed layer, and a base film provided on the opposite side of the antiferromagnetic film from the fixed layer and containing NiFeCr as a main component. May be further included.

According to one aspect of the invention, Ru, Ir,
By using an oxide film of Rh and Re, diffusion at the interface of the non-magnetic film for exchange coupling is suppressed, and heat resistance can be greatly improved. The fixed layer of this magnetoresistive effect element may be a hard magnetic film, but as the element size becomes smaller, the magnetic field from the fixed layer also affects the free layer. It is desirable to be composed of an antiferromagnetic coupling film.

In order for the free layer to rotate in the direction of the externally applied magnetic field, when the magnetizations of the two magnetic films constituting the laminated antiferromagnetic coupling film are M1 and M2, and the film thicknesses are t1 and t2, the respective products are M1 · t1 and M2 · t2 need to be different. This is because if the values of the products are equal, even if a magnetic field is applied, the rotation of the magnetization of the free layer in that direction will be hindered. These fixed layers are desirably composed of the laminated antiferromagnetic coupling film magnetically exchange-coupled with the antiferromagnetic film.

A magnetic film containing Co and B as a main component may be used as a part of the fixed layer or the free layer of these magnetoresistive elements, or a part of the magnetic film of both the fixed layer and the free layer. With such a configuration, the soft magnetic characteristics of the free layer are improved, and an element with high sensitivity can be obtained.

It has two shields made of a magnetic material,
By providing the above-described magnetoresistive effect element in the gap between the two shield portions, a magnetic head having a reproducing head portion for detecting a signal magnetic field having excellent thermal stability becomes possible.

The magnetic head has a magnetic flux guide (yoke) made of a magnetic material and uses the above-described magnetoresistive element as an element for detecting a signal magnetic field guided by the magnetic flux guide. A magnetic head having a head section is made possible.

A magnetic recording apparatus having excellent thermal stability can be constituted by using these magnetic heads, their driving sections, a magnetic recording medium section for recording information, and a signal processing section.

The conductor line (word line) provided to generate a magnetic field for causing the magnetization reversal of the magnetoresistive element, the free layer of the magnetoresistive element, and the resistance change of the magnetoresistive element. By providing a conductor line (sense line) for detecting the resistance, a magnetoresistive effect memory element having excellent thermal stability can be realized.

If these memory elements are arranged in a matrix and a drive circuit is provided, a memory element having excellent thermal stability (random access) can be obtained.

[0038]

FIG. 1 shows an example of a magnetoresistive element according to an embodiment. The magnetoresistive element 100 is provided with a free layer 101 that is easily magnetized and rotated by an external magnetic field, a nonmagnetic layer 103, and a magnetic layer that is provided on the side opposite to the free layer 101 with respect to the nonmagnetic layer 103 and is easily rotated by an external magnetic field. And a fixed layer 102 which is not provided. The fixed layer 102 is composed of the non-magnetic film 104 for exchange coupling and the magnetic films 105 and 1 which are anti-ferromagnetically exchange-coupled via the non-magnetic film 104 for exchange coupling.
06. The non-magnetic film 104 for exchange coupling has an R
The oxide contains any of u, Ir, Rh, and Re.

The free layer 101 and the fixed layer 102 are magnetically separated by the non-magnetic layer 103. Free layer 101
Is freely magnetized and rotated by an externally applied magnetic field,
The magnetization of the fixed layer 102 is not easily rotated by an externally applied magnetic field.

As described above, the fixed layer 102 includes the magnetic films 105 and 106 that are antiferromagnetically exchange-coupled via the exchange-coupling nonmagnetic film 104. The present invention provides a non-magnetic film 1 for exchange coupling which realizes this antiferromagnetic exchange coupling.
04 is characterized by using any oxide film of Ru, Ir, Rh and Re. As a non-magnetic film for exchange coupling for anti-ferromagnetic exchange coupling between two magnetic films, Cu, Ag,
Many metals such as Cr, Ru, and Ir are known. However, using an oxide film or a nitride film of these metals,
A nonmagnetic film for exchange coupling capable of realizing antiferromagnetic exchange coupling has not been known. That is, it is common knowledge of those skilled in the art that a metal oxide film cannot antiferromagnetically exchange-couple two magnetic layers. The use of an oxide film as the magnetic film was an insane view for those skilled in the art.

For example, antiferromagnetic exchange coupling in which two magnetic films are antiferromagnetically exchange-coupled cannot be realized depending on an oxide film such as Cu, Ag, or Cr. The following are known as the reasons for this.

The electrons of the two magnetic films are usually called d electrons. The d-electrons behave locally. Therefore, if the two magnetic films are separated from each other by several atomic layers, the magnetic interaction between the two magnetic films rapidly decreases. Cu, A
Electrons of a nonmagnetic metal film such as g, Cr, Ru, Ir are usually called s electrons. This C between the two magnetic films
When a non-magnetic metal film such as u, Ag, Cr, Ru, Ir is inserted, the s-electron behaves iteratively. The magnetic interaction between d electrons of the two magnetic films is enhanced through the s electrons that behave iteratively. As a result, the distance between the two magnetic films (that is, the thickness of the nonmagnetic metal film)
, The two magnetic films are exchange-coupled antiferromagnetically or ferromagnetically. This effect is called "RKKY interaction"
Also known as

However, when an oxide film is used for the non-magnetic metal film, the electrons of the oxide film exhibit local behavior without performing itinerant behavior, so that the two magnetic films must be antiferromagnetic. Exchange coupling is difficult.

As described above, using an oxide film as the non-magnetic film for exchange coupling is an insane view for those skilled in the art, and in fact, the oxide film was not used as a non-magnetic film for exchange coupling. It is known that even when a typical oxide film such as Al ₂ O ₃ or SiO ₂ is inserted between two magnetic films and used as a non-magnetic film for exchange coupling, the two magnetic films do not exchange-couple at all. . The same applies to Cu and Cr oxide films. That is, the two magnetic films that are antiferromagnetically exchange-coupled via Cu or Cr are not antiferromagnetically exchange-coupled when the Cu or Cr is replaced by a Cu or Cr oxide film.

The present inventors insert an ultra-thin oxide film having a thickness of about 1 nm into the ferromagnetic film included in the pinned layer, and electrons are mirror-reflected by the ultra-thin oxide film. They reported that the magnetoresistance effect was greatly improved (Jou
rnal of Magnetism and Mag
netic Materials 210 (200
0) L20-24).

The inventors of the present invention have paid attention to these facts, and have sought an oxide film which can realize an anti-ferromagnetic exchange coupling between two magnetic films while realizing a mirror reflection effect of electrons. Research and development. As a result, Ru, I
It has been discovered that the oxide films of r, Rh, and Re can exceptionally realize antiferromagnetic exchange coupling between the two magnetic films while being oxide films. Furthermore, this Ru, I
It has been discovered that oxide films of r, Rh, and Re exhibit excellent thermal stability described below.

The Ru, Ir, Rh, and Re metal oxide films are less likely to diffuse than the Ru, Ir, Rh, and Re metal films. That is, diffusion does not occur at the interface of the exchange-coupling nonmagnetic film 104 even at 400 ° C. or higher, and the characteristics of the magnetoresistance effect element do not deteriorate. Also, this Ru, I
The oxide film of any of r, Rh, and Re is an oxide film, and the two magnetic films 105 and 106 can be exchange-coupled antiferromagnetically via this film. As described above, Ru, Ir, Rh,
If any oxide film of Re is used, diffusion does not occur at the interface of the exchange-coupling nonmagnetic film 104 even at 400 ° C. or higher, and the characteristics of the magnetoresistive element do not deteriorate, that is, A thermally stable magnetoresistive element 100 can be obtained.

When a metal film such as Cu is used as the nonmagnetic layer 103, GMR is obtained. In this GMR, electrodes are provided on the left and right sides of the multilayer film shown in FIG. 1 to constitute a magnetoresistive element. When an insulating film such as an Al oxide film is used as the nonmagnetic layer 103, TMR is obtained. In this TMR, electrodes are provided above and below the multilayer film shown in FIG. 1 to constitute a magnetoresistive element.

In both the GMR and the TMR,
When the magnetization direction of the free layer 101 is antiparallel to the magnetization direction of the magnetic film 105 included in the fixed layer 102, the resistance of the magnetoresistive element is high, and when the magnetization direction is parallel, the resistance is low. In the GMR and the TMR, a resistance change rate (hereinafter, referred to as an MR ratio) larger than that of a conventional magnetoresistive element using NiFe or the like can be obtained.

FIG. 2 is a configuration diagram of another magnetoresistive element 200 according to the embodiment. The same components as those of the magnetoresistance effect element 100 described above with reference to FIG. 1 are denoted by the same reference numerals. A detailed description of these components will be omitted.

As in the case of the magnetoresistive element shown in FIG. 1, the fixed layer 102 included in the magnetoresistive element 200 includes a magnetic film 105 and an antiferromagnetic exchange-coupled exchange layer via a non-magnetic film 104 for exchange coupling. 106 is included. The present invention
It is characterized in that an oxide film of any of Ru, Ir, Rh, and Re is used as the exchange-coupling nonmagnetic film 104 for realizing the antiferromagnetic exchange coupling. Non-magnetic film 104 for exchange coupling
When an oxide film of any of Ru, Ir, Rh, and Re is used, the non-magnetic film 104 for exchange coupling is used even at 400 ° C. or higher.
Can be obtained at which no diffusion occurs at the interface, and the characteristics of the magnetoresistive element do not deteriorate, that is, a thermally stable magnetoresistive effect element 200 can be obtained.

This magnetoresistive element 200 is composed of the fixed layer 1
Further, the antiferromagnetic film 201 further includes an antiferromagnetic film 201 that is magnetically exchange-coupled to the antiferromagnetic film 02 and a base film 201A that is provided on the opposite side of the antiferromagnetic film 201 from the pinned layer 102 and is mainly composed of NiFeCr.

In FIG. 1, in order to further strongly fix the magnetization direction of the fixed layer 102, as shown in FIG.
It is desirable to adopt a configuration exchange-coupled with 01. In particular, in this case, as the base film 201A for the antiferromagnetic film 201, N
When a film containing iFeCr as a main component is used, the antiferromagnetic film 20
1 and the fixed layer 102 have improved exchange coupling characteristics. In this case, in order for the exchange coupling force of the antiferromagnetic film 201 to extend only to the fixed layer 102, it is desirable that NiFeCr as the base film 201A be a nonmagnetic film.

In FIG. 2, a hard magnetic film may be provided in place of the antiferromagnetic film 201. However, in consideration of application to a magnetic head or a memory element, when patterned into a fine shape, Since the magnetic field affects the free layer 101, it is desirable to use the antiferromagnetic film 201 which does not have this effect.

FIG. 3 is a configuration diagram of still another magnetoresistance effect element 300 according to the embodiment. The same components as those of the magnetoresistive element 200 described above with reference to FIG. 2 are denoted by the same reference numerals. A detailed description of these components will be omitted.

As in the case of the magnetoresistive element shown in FIG. 1, the fixed layer 102 included in the magnetoresistive element 300 includes a magnetic film 105 anti-ferromagnetically exchange-coupled via a non-magnetic film 104 for exchange coupling. 106 is included. The present invention
It is characterized in that an oxide film of any of Ru, Ir, Rh, and Re is used as the exchange-coupling nonmagnetic film 104 for realizing the antiferromagnetic exchange coupling. Non-magnetic film 104 for exchange coupling
When an oxide film of any of Ru, Ir, Rh, and Re is used, the non-magnetic film 104 for exchange coupling is used even at 400 ° C. or higher.
Can be obtained without diffusion at the interface of the magnetoresistive element and the characteristics of the magnetoresistive element are not degraded, that is, a magnetoresistive element 300 that is thermally stable.

This magnetoresistive element 300 differs from the magnetoresistive element 200 described above with reference to FIG. 2 in that a free layer 301 is provided instead of the free layer 101.
The free layer 301 includes an exchange-coupling nonmagnetic film 302 and magnetic films 303 and 304 that are antiferromagnetically exchange-coupled via the exchange-coupling nonmagnetic film 302. The exchange-coupled nonmagnetic film 302 contains any oxide of Ru, Ir, Rh, and Re. Magnetic films 303 and 304
When the magnetization of M1 and M2 and their film thicknesses are t1 and t2,
The respective products M1 × t1 and M2 × t2 are substantially different.

That is, in this configuration, (M1 × t1-M2 × t
Care must be taken that 2) does not become zero. In order to realize this, when two films having the same composition are used, it is necessary to make a difference in the film thickness. Even if the two magnetic films have the same film thickness, they only need to have different magnetizations.

In the magnetoresistive elements 100 and 200 shown in FIG. 1 or FIG. 2, when the width of the magnetoresistive element is reduced while the film thickness is kept constant, that is, when the element is miniaturized, generally, the reversal magnetic field is magnetic. It increases in inverse proportion to the width of the resistance element. When the reversal magnetic field increases, the sensitivity of the magnetoresistive effect element decreases, causing an increase in the write current of a word line in a memory element using the same.
However, in the case of the present invention, M1 × t1 and M2 × t2
(M1 × t1−M2 × t2) operates as a magnetically effective portion of the entire free layer 301.
By adjusting the difference between xt1 and M2xt2, it is possible to solve the problem of a decrease in sensitivity due to miniaturization of elements and the problem of an increase in write current.

When the magnetoresistance effect element is miniaturized, information written in the free layer of the memory element may be affected by thermal fluctuation. However, by providing a free layer 301 including two magnetic films 303 and 304 that are antiferromagnetically exchange-coupled via a nonmagnetic film (nonmagnetic film for exchange coupling) 302 as shown in FIG. A stable memory element can be realized. In this case, the difference between the product of the magnetization and the film thickness of the two magnetic films 303 and 304 constituting the free layer 301 is larger than 0 and 2T (tesla).
It is desirable to set the thickness to nm or less.

As described above, the free layer 301 including the two magnetic films 303 and 304 exchange-coupled via the non-magnetic film 302 forms the free layer 301 while maintaining the antiferromagnetic exchange coupling as shown in FIG. The magnetization is rotated such that the magnetization direction of (M1 × t1−M2 × t2) of 301 is parallel to the direction of the external magnetic field. Even if the free layer 301 includes two magnetic films 303 and 304 exchange-coupled via the non-magnetic film 302, those that do not operate as shown in FIG. It is important to design to work.

Further, as shown in FIG. 3, when the fixed layer 102 includes two magnetic films 105 and 106 which are antiferromagnetically exchange-coupled via the exchange-coupling nonmagnetic film 104, the external magnetic field In this case, it is possible to provide a magnetoresistive element which is harder to rotate magnetization and is thermally stable. In this case, unlike the free layer 301, the magnetization and the film thickness of the magnetic films 105 and 106 may be the same. In FIG. 3, the fixed layer 102
1 has an antiferromagnetic film 201, but a configuration without the antiferromagnetic film 201 may be adopted.

In at least one of the magnetic films 105 and 106 of the fixed layer 102 included in the magnetoresistive element 100 or 200, CoFeB, CoNbB, CoFeNbB or the like containing Co as a main component and B in an amount of 5% to 30%. A film may be used. With such a configuration, the soft magnetic characteristics of the free layer 101 or 201 are improved, and an element with high sensitivity can be obtained.

Similarly, at least one of the magnetic films 105 and 106 of the fixed layer 102 included in the magnetoresistance effect element 300 and the magnetic films 303 and 304 included in the free layer 301 has C
Co containing o as a main component and containing 5% or more and 30% or less of B
A magnetic film such as FeB, CoNbB, or CoFeNbB may be used. With such a configuration, the free layer 301
Are improved in soft magnetic characteristics, and an element having high sensitivity can be obtained.

The magnetic films 105 and 106 included in the fixed layer 102 shown in FIGS. 1 to 3 and the magnetic films 303 and 304 included in the free layer 301 shown in FIG. 3 are made of Co, Fe, Co—Fe, Ni-Fe, Ni-F
It is desirable to use an alloy film of e-Co or the like, or a laminated film of these. As the magnetic films 303 and 304 included in the free layer 301, those exhibiting soft magnetic characteristics are desirable.
It is desirable that a magnetic film of Ni-Fe or Ni-Fe-Co is used as the main constituent film.

The magnetic film 1 of the fixed layer 102 shown in FIGS.
05 and 106 may be hard magnetic films. For example, CoP
A t-based film is one example. Further, a laminate of the hard magnetic film and the magnetic film may be used. One example is CoPt / C
oFe. The fixed layer 102 is made of the antiferromagnetic film 20.
1 may be included.

As the antiferromagnetic film 201 shown in FIGS. 2 and 3, T-Mn (T is Ni, Pt, Ir, Pd, R
An alloy film of one or more elements selected from h, Ru, and Cr) is preferable. In a specific example, PtMn, Rd
PtMn, NiMn, IrMn, CrPtMn, RuR
hMn and the like. It is desirable that the base film 201A of the antiferromagnetic film 201 be mainly composed of NiFeCr. In this case, NiFeCr is desirably non-magnetic, and if it has a composition containing 20 atomic% or more of Cr, it can be non-magnetic at room temperature. Further, as in the case of the above-described free layer 301, two magnetic films may be antiferromagnetically exchange-coupled via a nonmagnetic film.

As the nonmagnetic layer 103 for magnetically separating the free layer and the fixed layer, it is desirable to use AlO, AlN, AlNO, BN, or the like for the insulating film for obtaining TMR. Metal film (non-magnetic conductive film) for obtaining GMR
Is made of Cu, Au, Ag, Cr, Ru, or the like.
03 is desirably used. By inserting a half-metal film having a large spin polarizability between the nonmagnetic layer 103 and the free layer 101 or 301, or between the nonmagnetic layer 103 and the fixed layer 102, a higher magnetoresistance ratio can be obtained. Can be An example of this half metal film having a large spin polarizability is an Fe ₃ O ₄ film. In this case, it is desirable that the film thickness be 1 nm or less.

Using these magnetoresistive elements according to the present embodiment, a magnetic head having excellent thermal stability can be obtained. FIG. 5 is a configuration diagram of a magnetic head 500 using the magnetoresistance effect element according to the present embodiment. The magnetic head 500 includes a reproducing head unit 505. The reproducing head 505 includes an upper shield 501, a lower shield 502, an upper shield 501 and a lower shield 5
02 and the magnetoresistive element 504 according to the present embodiment provided in the reproducing gap 503 formed between the magnetoresistive effect element 504 and the reproducing gap 503. These two shields 501 and 502 are made of a magnetic material.

When a current flows through the winding 506, a signal is recorded on a recording medium (not shown) by a leakage magnetic field from a recording gap 508 formed between the recording pole 507 and the upper shield 501. A signal magnetic field from a recording medium (not shown) is applied to a reproducing gap 503 (shield gap).
The signal recorded on the recording medium is reproduced by reading the magnetoresistive element 504 provided therebetween.

A lead wire (not shown) is connected to the magnetoresistive element 504. The magnetoresistance effect element 504 is GM
In the case of R, lead wires insulated from the two shields 501 and 502 are connected to the left and right sides of the magnetoresistive element 504. When the magnetoresistive element 504 is a TMR, lead wires are connected above and below the magnetoresistive element 504. When the magnetoresistive element 504 is a TMR, the lead wires connected above and below the magnetoresistive element 504 are connected to the upper shield 501 and the lower shield 502, respectively, and the upper shield 501 and the lower shield 502 are connected to the lead wires. The structure may also be used as a part. According to this structure, the reproduction gap 503 can be made narrower.

As described above, according to the present embodiment, it is possible to realize the magnetic head 500 having the reproducing head 505 provided with the magnetoresistive element 504 having excellent thermal stability.

FIG. 6 is a configuration diagram of another magnetic head 600 using the magnetoresistance effect element according to the present embodiment. The magnetic head 600 includes an upper shield 602, a lower shield 601, an upper shield 602 and a lower shield 601.
And a magnetoresistive effect element 504 provided between them. The lower shield 601 is made of a magnetic material and also serves as a yoke (magnetic flux guide). FIG. 6 shows a configuration in which the magneto-resistance effect element 504 as the TMR is used.

As shown in FIG. 6, a recording medium (not shown)
From the lower shield 60 through the read gap.
1 along the yoke portion also serving as
4 and read by the magnetoresistive element 504 connected to the yoke 601. An upper lead is connected to the magnetoresistive element 504 as a TMR.
The lower shield 601 further serves as a lower lead connected to the magnetoresistive element 504. Further, the whole or a part of the free layer included in the magnetoresistive element 504 may also be used as the lower shield 601. GMR
When the magnetoresistive element 504 is used as the above, it is necessary to make the configuration in which the magnetoresistive element 504 and the yoke 601 are insulated.

As described above, according to the present embodiment, it is possible to realize a magnetic head 600 having a yoke provided with a magnetoresistive element 504 having excellent thermal stability.

FIG. 7 shows a magnetic recording / reproducing apparatus 70 using a magnetic head having a magnetoresistive element according to the present embodiment.
FIG. A magnetic recording / reproducing apparatus such as an HDD can be configured using a magnetic head having the reproducing head according to the present embodiment. As shown in FIG. 7, a magnetic recording / reproducing apparatus 700 includes a magnetic head 701 for recording / reproducing information on / from a magnetic recording medium 703, an arm 705 on which the magnetic head 701 is mounted, and a driving unit 7 for driving the arm 705.
02 and the magnetic recording medium 703 by the magnetic head 701.
And a signal processing unit 704 for processing a signal reproduced from the HDD and a signal to be recorded on the magnetic recording medium 703 by the magnetic head 701.

The driving section 702 drives the arm 705 so as to position the magnetic head 701 at a predetermined position on the magnetic recording medium 703. In the reproducing operation, the magnetic head 701 reads a signal recorded on the magnetic recording medium 703. The signal processing unit 704 reproduces a signal read from the magnetic recording medium 703 by the magnetic head 701. In the recording operation, the signal processing unit 704 records a signal to be recorded on the magnetic recording medium 703. The magnetic head 701 records the signal that has been subjected to the recording process by the signal processing unit 704 on the magnetic recording medium 703. As described above, according to the present embodiment, a magnetic recording / reproducing apparatus using a magnetic head having a reproducing head with excellent thermal stability can be configured.

Further, a word line for generating a magnetic field and a sense line for reading the resistance of the magnetoresistive element are provided on the magnetoresistive element according to the present embodiment, and FIGS.
With the configuration shown in (1), a memory element can be obtained.

FIG. 8 is a configuration diagram of a memory element 800 using the magnetoresistance effect element 801 according to the present embodiment as a GMR. The memory element 800 includes a magnetoresistive element 801 as a GMR. Sense lines 802 for reading information recorded on the magnetoresistive element 801 are connected to the left and right sides of the magnetoresistive element 801. The memory element 800 includes a magnetoresistive element 8
01 are provided with two word lines 803 and 804 for writing information.

When a plurality of memory elements 800 are arranged in a matrix, two word lines 803 and 80
4, the plurality of magnetoresistive elements 80
It is possible to write information by selecting one of the magnetoresistive effect elements. The current flows in the word line 803 in a direction perpendicular to the plane of the drawing, and in the word line 804, in the left-right direction in the drawing.

FIG. 9 is a configuration diagram of a memory element 900 using the magnetoresistive element 901 according to the present embodiment as a TMR. The memory element 900 includes a magnetoresistive element 901 as a TMR. Memory element 9
00 is provided with a word line 903 for writing information to the magnetoresistive element 901. Above and below the magnetoresistive element 901, a sense line 902 and a word line 904 that is also used as a sense line are connected.

When a plurality of memory elements 900 are arranged in a matrix, one of the plurality of magnetoresistive elements 901 is formed by a combined magnetic field of word line 903 and word line 904 also serving as a sense line. To write information. The current flows in the word line 903 in a direction perpendicular to the plane of the drawing, and in the word line 904 also serving as a sense line, in the left and right directions in the drawing.

The difference between the memory element 800 shown in FIG. 8 and the memory element 900 shown in FIG. 9 is that when a plurality of memory elements are arranged in a matrix, the memory elements 800 in FIG. Sense line 8
9 is connected to the sense line 902 in parallel with each memory element in the memory element 900 of FIG.

These memory elements 800 and 900
In this case, a current is caused to flow through the word lines 803 and 804, the word line 903 and the sense / word line 904 to generate a magnetic field, and the magnetic field reverses the magnetization of the free layers included in the magnetoresistive elements 801 and 901 respectively. To record information. Information is read using the sense line 802 and the sense line 902 and the sense / word line 904 using the magnetoresistive elements 801 and 9.
When the magnetization direction of the free layer and the magnetization direction of the fixed layer are parallel to each other, the resistance of the element is low. When the magnetization direction is antiparallel, the resistance of the element is high. .

Since the memory elements 800 and 900 are magnetic memories, they are nonvolatile unlike semiconductor DRAMs and unlike semiconductor flash memories, the number of times of writing / reading is infinite and the number of times of writing / reading is in principle infinite. The feature is that the erasing time is short in the order of ns and nondestructive reading is possible.

Although the above has been a description of the operation principle of a 1-bit memory element, it is necessary to arrange these memory elements in a matrix when configuring an actual memory element. In this case, a magnetic field is generated by two orthogonal word lines on each memory element, for example, the memory element at the address (N, M), and information is written by the combined magnetic field. The reading of information is performed by reading the magnitude of the resistance of the element connected to the address (N, M).

[0087]

(Embodiment 1) Si for substrate and C for target
r, Pt, CoPt, Ir, CoFe, Al, Cu, N
A magnetoresistive element 100 as shown in FIG. 1 was formed by using iFe and a sputtering method. First, a Cu / Pt / Cr film having a thickness of 50 nm was formed on a Si substrate for use as a lower electrode, and a magnetoresistive element having the following configuration was formed thereon. Example Sample 1: CoPt (25) / CoFe (3) / I
rO (0.8) / CoFe (3) / AlO (1.4) /
CoFe (1) / NiFe (3) Here, the value in parentheses indicates the film thickness, and the unit is nm. Also I
The rO and AlO films were formed by natural oxidation after forming Ir and Al.

In Example 1, CoPt and C
oFe corresponds to the magnetic film 106 shown in FIG. IrO
Corresponds to the non-magnetic film 104 for exchange coupling, CoFe corresponds to the magnetic film 105, and AlO corresponds to the non-magnetic layer 103. CoFe and NiFe correspond to the free layer 101.

Example 1 The film of sample 1 was made into a magnetoresistive element having a width of 1 μm × 1 μm by photolithography, and the periphery thereof was insulated with AlO, a through hole was opened, and a 50 nm thick Cu / Pt film was formed thereon. Was formed into an upper electrode. 400 ° C.
Then, a magnetic field of 500 Oe was applied at room temperature to measure a magnetoresistance ratio (hereinafter referred to as an MR ratio). The results are shown in (Table 1).

[0090]

[Table 1] Thus, it was found that the magnetoresistance effect element 100 of the present invention was extremely excellent in thermal stability.

(Example 2) Si was used for the substrate, and P was used for the target.
t, Ru, PtMn, CoFe, Cu, Al, NiF
e, a magnetoresistive element 200 as shown in FIG. 2 was formed by sputtering using NiFeCr. First, Si
A Cu / Pt film having a thickness of 50 nm was formed on the substrate for use as a lower electrode, and a magnetoresistive element having the following configuration was formed thereon. Example sample 2: PtMn (25) / CoFe (3) / R
uO (0.8) / CoFe (3) / AlO (1.4) /
CoFe (1) / NiFe (4) and those using NiFeCr as a base film of PtMn were also prepared. Example sample 2A: NiFeCr (4) / PtMn (2
5) / CoFe (3) / RuO (0.8) / CoFe
(3) / AlO (1.4) / CoFe (1) / NiFe
(4) For comparison, the following sample having a conventional configuration was also prepared. Conventional sample A: PtMn (25) / CoFe (6) / A
10 (1.2) / CoFe (1) / NiFe (4) In the sample 2, PtMn corresponds to the antiferromagnetic film 201 shown in FIG. CoFe corresponds to the magnetic film 106, and RuO corresponds to the non-magnetic film 104 for exchange coupling. C
oFe corresponds to the magnetic film 105 and AlO corresponds to the non-magnetic layer 10.
Corresponds to 3. CoFe and NiFe form the free layer 10
Corresponds to 1. In Example sample 2A, NiFeCr
Corresponds to the base film 201A. Others are Example Sample 2.
Is the same as

However, the RuO film and the AlO film were formed by forming Ru and Al and then spontaneously oxidizing them. After treating these samples in a thermal magnetic field at 280 ° C. for 2 hours, the films of Example Sample 2 and Conventional Example Sample A were 1 μm × 1 μm wide using photolithography.
m, and the periphery is insulated with AlO, then a through hole is opened, and a 50 nm thick Cu /
A Pt film was formed to serve as an upper electrode. The magnetoresistive element thus manufactured was heat-treated to 400 ° C., and a magnetic field of 500 Oe was applied at room temperature to measure a magnetoresistance change ratio (hereinafter referred to as MR ratio). The results are shown in (Table 2).

[0093]

[Table 2] Thus, it was found that the magnetoresistance effect element 200 of the present invention was superior in thermal stability as compared with the conventional element.

(Embodiment 3) Si was used for the substrate, and T was used for the target.
a, NiFeCr, RuO2, PtMn, CoFe, C
U and CoFeB were used to form a magnetoresistive element 200 as shown in FIG. 2 by a sputtering method. First, a Ta / NiFeCr film having a thickness of 6 nm was formed on a Si substrate, and a magnetoresistive element having the following configuration was formed thereon. Example sample 3: PtMn (15) / CoFe (2) / R
uO (0.8) / CoFe (2) / Cu (2.4) / C
oFe (2) / Cu (1) / Ta (3) Example sample 3A: PtMn (15) / CoFeB (1)
/CoFe(1.5)/RuO(0.8)/CoFe
(2) / Cu (2.4) / CoFe (2) / Cu (1)
/ Ta (3) (However, the RuO film indicates a Ru oxide film.
It does not mean that the ratio of u to O is 1: 1. The same applies to IrO and AlO described above. ) For comparison, the following samples having a conventional configuration were also prepared. Conventional sample B: PtMn (15) / CoFe (4) / C
u (2.4) / CoFe (2) / Cu (1) / Ta
(3) In Example Sample 3, PtMn corresponds to the antiferromagnetic film 201 shown in FIG. CoFe corresponds to the magnetic film 106, and RuO corresponds to the non-magnetic film 104 for exchange coupling. C
oFe corresponds to the magnetic film 105. Cu is the nonmagnetic layer 1
03. CoFe corresponds to the free layer 101. Cu and Ta are cap films (not shown).
In Example sample 3A, CoFeB and CoFeB
Corresponds to the magnetic film 106. Others are Example Sample 3.
Is the same as

After these samples were treated in a thermal magnetic field at 280 ° C. for 2 hours, the films of Example Sample 3 and Conventional Sample B were formed into a shape of 0.5 μm × 1 μm by photolithography and electrodes were attached thereto. An effect element was produced. The MR ratio of these magnetoresistive elements was measured at room temperature, and the coercive force Hc of the free layer was examined. The results are shown below. Example Sample 3 Example Sample 3A Conventional Sample B Hc (Oe) 6 19 As described above, when the magnetic film 106 of the fixed layer 102 is made of CoFeB, the soft magnetic characteristics of the free layer 101 are significantly improved. I understood. Next, the magnetoresistance effect element was heat-treated to 400 ° C., and a magnetic field of 500 Oe was applied at room temperature to measure a magnetoresistance change ratio (hereinafter referred to as MR ratio). The results are shown in (Table 3).

[0096]

[Table 3] Thus, it was found that the magnetoresistance effect element of the present invention was superior in thermal stability as compared with the conventional element.

(Embodiment 4) Si was used for the substrate, and P was used for the target.
t, PtMn, CoFe, Ru, Al, Cu, NiF
e, a magnetoresistive element 300 as shown in FIG. 3 was formed by sputtering using NiFeCr. First, Si
A Cu / Pt film having a thickness of 50 nm was formed on the substrate for use as a lower electrode, and a magnetoresistive element having the following configuration was formed thereon. Example sample 4: PtMn (25) / CoFe (3) / R
uO (0.8) / CoFe (3) / AlO (1.4) /
NiFe (3) / RuO (0.8) / NiFe (2) Further, one having NiFeCr as a base film was also prepared. Example sample 4A: NiFeCr (4) / PtMn (2
5) / CoFe (3) / RuO (0.8) / CoFe
(3) / AlO (1.4) / NiFe (3) / RuO
(0.8) / NiFe (2) For comparison, the following sample having a conventional configuration was also prepared. Conventional sample C: PtMn (25) / CoFe (3) / R
u (0.7) / CoFe (3) / AlO (1.4) /
NiFe (5) In Example Sample 4, PtMn corresponds to the antiferromagnetic film 201 shown in FIG. CoFe corresponds to the magnetic film 106, and RuO corresponds to the non-magnetic film 104 for exchange coupling. C
oFe corresponds to the magnetic film 105 and AlO corresponds to the non-magnetic layer 10.
3, NiFe corresponds to the magnetic film 304, and RuO
Corresponds to the non-magnetic film for exchange coupling 302, and NiFe corresponds to the magnetic film 303. In Example sample 4A, NiF
eCr corresponds to the base film 201A.

After treating these samples in a thermal magnetic field at 280 ° C. for 2 hours, the films of Example 4 and Conventional Sample C were formed into a magnetoresistive element having a width of 0.2 μm × 0.3 μm by photolithography. After insulating the periphery with AlO, a through-hole was opened, and a Cu / Pt film having a thickness of 50 nm was formed thereon to form an upper electrode. The magnetoresistive element thus manufactured is heat-treated to 400 ° C., and a magnetic field is applied at room temperature to 500 ° C.
Oe was applied, and the magnetoresistance ratio (hereinafter referred to as MR ratio) was measured. The results are shown in (Table 4).

[0099]

[Table 4] Thus, it was found that the magnetoresistance effect element of the present invention was superior in thermal stability as compared with the conventional element. Next, MR
When the dependence of the ratio on the measured magnetic field H was examined, the following results were obtained. H = 40 Oe H = 80 Oe H = 120 Oe Example Sample 4 MR = 39% MR = 40% MR = 41% Example Sample 4A MR = 39% MR = 41% MR = 42% Conventional Sample C MR = 4% MR = 28% MR = 39% As can be seen from the results, the magnetoresistance effect element 3 of the present invention
Reference numeral 00 denotes a layer in which the free layer 301 is antiferromagnetically exchange-coupled via the nonmagnetic layer 302.
Since the effective film thickness of the iFe film with respect to the external magnetic field can be considered to be 1 nm, a sufficiently large MR ratio is exhibited even with a weak magnetic field. On the other hand, since the film thickness of NiFe of the conventional sample C is 5 nm, the demagnetizing field increases when the element size is reduced as described above, and the magnetization rotation of the free layer becomes difficult when the measured magnetic field decreases, so that the weak magnetic field is generated. Therefore, it is considered that a large MR ratio cannot be obtained. Further, when the asymmetry of the MR curves of these magnetoresistive elements was examined, the asymmetry was hardly observed in the sample samples 4 and 4A, but the sample sample C was slightly asymmetry. .

(Embodiment 5) Si was used for the substrate, and T was used for the target.
a, NiFeCr, RuO2, PtMn, CoF
A magnetoresistive element 300 as shown in FIG. 3 was prepared by using e, Cu, and NiFe by a sputtering method. First, a Ta / NiFeCr film having a thickness of 6 nm was formed on a Si substrate, and a magnetoresistive element having the following configuration was formed thereon. Example sample 5: PtMn (15) / CoFe (2) / R
uO (0.8) / CoFe (2) / Cu (2.4) / C
oFe (1) / NiFe (1) / RuO (0.8) / N
iFe (1.5) / Ta (3) For comparison, the following sample having a conventional configuration was also prepared. Conventional sample D: PtMn (15) / CoFe (2) / R
u (0.7) / CoFe (2) / Cu (2.4) / Co
Fe (1) / NiFe (2.5) / Ta (3) In Example Sample 5, PtMn corresponds to the antiferromagnetic film 201 shown in FIG. CoFe corresponds to the magnetic film 106, and RuO corresponds to the non-magnetic film 104 for exchange coupling. C
oFe corresponds to the magnetic film 105, and Cu corresponds to the non-magnetic layer 103.
Corresponding to CoFe and NiFe form the magnetic film 304
Corresponding to RuO corresponds to the non-magnetic film 302 for exchange coupling. NiFe corresponds to the magnetic film 303. Ta
Is a cap (not shown).

After treating these samples in a thermal magnetic field at 280 ° C. for 2 hours, the films of Example Sample 5 and Conventional Sample D were formed into a shape of 0.2 μm × 0.3 μm by photolithography and electrodes were attached. A magnetoresistance effect element was manufactured. The magnetoresistive element thus manufactured was heat-treated to 400 ° C., and a magnetic field of 500 Oe was applied at room temperature to measure a magnetoresistance change ratio (hereinafter referred to as MR ratio). The results are shown in (Table 5).

[0102]

[Table 5] Thus, it was found that the magnetoresistance effect element 300 of the present invention was superior in thermal stability as compared with the conventional element. Next, when the dependence of the MR ratio on the measured magnetic field H was examined, the following results were obtained. H = 40 Oe H = 80 Oe H = 120 Oe Example Sample 5 MR = 8% MR = 9% MR = 9% Conventional Sample D MR = 2% MR = 6% MR = 8% Thus, the element 300 of the present invention is It was found that the magnetic field sensitivity in the fine pattern shape was better than that of the conventional device.

(Example 6) A magnetic head 500 having the structure shown in FIG. 5 was manufactured by using the GMR films of Example Sample 3 manufactured in Example 3 and Conventional Sample B. A NiFe plating film was used for the recording pole 507 and the shields 501 and 502 of the head 500. The track width of the GMR element of the reproducing head 505 was 0.3 μm, and the MR height was 0.3 μm.
In order to examine the thermal stability of the manufactured head, the head 5
00 was placed in a thermostat at 150 ° C., a current of 5 mA was passed through it, and it was held for 5 days, and the output before and after the heat resistance test was compared.
As a result, the output reduction of the head using the sample 3 of the embodiment was about 1
%, Whereas the output reduction of the head using the conventional sample B was about 33%. From this, it was found that the thermal stability of the head 500 of the present invention was greatly improved as compared with the conventional one. Using this head 500,
A magnetic recording / reproducing apparatus 700 having a configuration as shown in FIG. 7 including a head driving unit, a magnetic recording medium disk, and a signal processing unit.
Were produced. A heat resistance test of the manufactured magnetic recording / reproducing apparatus 700 was performed using a thermostat at 130 ° C., and it was found that none of the apparatuses deteriorated.

(Embodiment 7) A magnetic head 600 having the structure shown in FIG. 6 using the TMR films having the constructions of the embodiment samples 2, 2A and 4 manufactured in the embodiments 2 and 4 and the conventional samples A and B
Was prepared. For the shields 601 and 602, a NiFe plating film was used. However, in this case, after the NiFe film of the shield is polished by CMP, the TMR film
Film formation was started from the e film, and finally a PtMn film was formed, and an electrode film was formed thereon. The shape of the TMR element in the reproducing head was 0.5 μm × 0.5 μm. Head 6 made
In order to determine the thermal stability of
The TMR element was placed in a thermostat at 0 ° C., a voltage of 0.2 V was applied to the TMR element, and the TMR element was held for 5 days, and the output before and after the heat resistance test was compared. As a result, the output reduction of the head using the sample samples 2, 2A and 4 was about 4%, whereas the output reduction of the head using the sample samples A and B of the conventional example was about 21%. From this, it was found that the thermal stability of the head 600 of the present invention was significantly improved as compared with the conventional one.

(Example 8) A magnetoresistive effect memory element 800 shown in FIG. 8 was manufactured by using the example sample 5 manufactured in the example 5 and the conventional sample D. Sense lines 802 were connected to the left and right of Example sample 5 and Conventional sample D manufactured in Example 5, an AlO film was formed thereon to insulate them, and then word lines 804 made of Cu were formed. After an AlO film was formed thereon and insulated, a word line 803 made of Cu was formed to produce a magnetoresistive memory element 800 as shown in FIG. The fabricated memory elements were arranged in a 64 × 64 matrix, and a trial production of a magnetic random access memory (MRAM) was performed. 380 ℃
After hydrogen sintering, the word lines 803 and 804
We tried to write and reproduce information using. As a result, the reproduction signal could be confirmed in the sample using the sample 5 of the example of the present invention, but the reproduction signal could not be obtained in the sample using the sample D in the conventional example.

(Example 9) A magnetoresistive effect memory element was manufactured using the example samples 4 and 4A manufactured in Example 4 and the conventional sample C. Example sample 4 produced in Example 4
And the lower electrode of the conventional sample C is connected to a sense line and a word line 90.
9, an upper electrode is used as a sense line 902, an AlO film is formed thereon to insulate it, and a word line 903 made of Cu is formed thereon, and a magnetoresistive effect memory element as shown in FIG. 900 were produced. The resistance of the obtained device was about 10 kΩ. A current was applied to the word lines 903 and 904 to generate a magnetic field, causing the magnetization reversal of the free layer to record information "1". Next, an electric current is applied to the word lines 903 and 904 in the opposite direction to cause the magnetization reversal of the free layer, thereby causing information
2 "was recorded. A bias voltage was applied between the sense lines 902 and 904, a sense current of 0.05 mA was applied, and the element outputs in the state of information" 1 "and the state of information" 2 "were measured. As a difference, about 150 mV was obtained in the device using the sample samples 4 and 4A, and similar high output was obtained in the device using the sample sample C of the related art.

Next, a magnetic random access memory (MRA) in which these elements are arranged in a 64 × 64 matrix.
M) was prototyped. First, CMOS was arranged in a matrix as a switching transistor (SW-Tr), and planarized by CMP. Then, the above-described magnetoresistive memory elements were provided in a matrix corresponding to each CMOS. Finally, hydrogen sintering was performed at 380 ° C.

Recording of information in the element at the address (N, M) was performed by applying a current to a word line intersecting the element at the address (N, M) and using the combined magnetic field. Reading was performed by a method in which each element was selected by a CMOS SW-Tr and the resistance value of each element was compared with a reference resistance. As a result, in the MRAM using the samples 4 and 4A of the example, the same large output as that of the single memory element was obtained.
No output was obtained from the MRAM using. This is thought to be because the device of the present invention can withstand the hydrogen sintering treatment at 380 ° C., but the conventional device cannot.

[0109]

As described above, according to the present invention, a magnetoresistive effect element which is improved in thermal stability and is stable against a heat treatment at 400 ° C., a magnetic head and a magnetic recording apparatus using the same. , And a memory device.

[Brief description of the drawings]

FIG. 1 is a diagram showing an example of a magnetoresistance effect element according to the present invention.

FIG. 2 is a diagram showing an example of a magnetoresistance effect element according to the present invention.

FIG. 3 is a diagram showing an example of a magnetoresistive element of the present invention.

FIG. 4 is a diagram showing a magnetization rotation mechanism of a free layer of the magnetoresistive element of the present invention with respect to an external magnetic field.

FIG. 5 is a diagram showing an example of a magnetic head having a shield using the magnetoresistive element of the present invention.

FIG. 6 is a diagram showing an example of a magnetic head having a yoke using the magnetoresistive element of the present invention.

FIG. 7 is a diagram showing an example of a magnetic recording / reproducing apparatus using the magnetoresistance effect element of the present invention.

FIG. 8 is a diagram showing an example of a memory element using the GMR film of the present invention.

FIG. 9 is a diagram showing an example of a memory element using the TMR film of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 magneto-resistance element 101 free layer 102 fixed layer 103 fixed layer 104 non-magnetic film for exchange coupling 105, 106 magnetic film

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01F 10/16 H01F 10/30 10/30 10/32 10/32 H01L 27/10 447 H01L 27/105 G01R 33/06 R (Declaration by the applicant) Patent application related to the results of the commissioned research by the national government, etc. (FY2000 New Energy and Industrial Technology Development Organization “Super-Advanced Electronic Technology Development Promotion Project (Super-Advanced Electronic Technology Development Promotion Business) ”Contract research, subject to the provisions of Article 30 of the Act on Special Measures for Industrial Revitalization) (72) Inventor Yasunari Sugita 1006 Oazadoma, Kadoma City, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. 2G017 AA02 AB05 AD55 5D034 AA02 BA03 BB01 CA03 5E049 AA04 AA07 BA12 CB02 DB12 GC01 5F083 FZ10 GA01 GA11 JA37 PR22

Claims (28)

[Claims] A non-magnetic layer; a fixed layer provided on a side opposite to the free layer with respect to the non-magnetic layer and not easily rotated by an external magnetic field; The fixed layer includes a first non-magnetic film for exchange coupling, and first and second magnetic layers that are anti-ferromagnetically exchange-coupled via the first non-magnetic film for exchange coupling. Wherein the first non-magnetic film for exchange coupling is Ru, Ir, Rh, Re.
A magnetoresistance effect element containing any one of the above oxides. 2. The magnetoresistance effect element according to claim 1, wherein said magnetoresistance effect element is a tunnel type magnetoresistance effect element. 3. The magnetoresistive element according to claim 1, further comprising an antiferromagnetic film magnetically exchange-coupled with the fixed layer. 4. The free layer includes a second non-magnetic film for exchange coupling, and third and fourth magnetic films antiferromagnetically exchange-coupled via the second non-magnetic film for exchange coupling. The second non-magnetic film for exchange coupling is made of Ru, Ir, Rh, Re.
Wherein the third and fourth magnetic films have magnetizations of M1 and M2 and a thickness of t
Let 1, t2 be the respective products M1 × t1 and M2 × t
2. The magnetoresistive element according to claim 1, wherein 2 is substantially different. 5. At least one of the first to fourth magnetic films
5. The magnetoresistive element according to claim 4, wherein the main component is Co and B is contained. 6. The magnetoresistance effect element according to claim 1, wherein at least one of said first and second magnetic films contains Co and B as a main component. 7. An antiferromagnetic film magnetically exchange-coupled with the fixed layer, and an underlayer mainly composed of NiFeCr and provided on a side opposite to the fixed layer with respect to the antiferromagnetic film. The magnetoresistive element according to claim 1. 8. A free layer which is easily rotated by an external magnetic field, a non-magnetic layer, and a fixed layer which is provided on a side opposite to the free layer with respect to the non-magnetic layer and which is not easily rotated by an external magnetic field. A magnetoresistive effect element comprising: a first exchange coupling nonmagnetic film; and a first and second magnetic layers antiferromagnetically exchange coupled through the first exchange coupling nonmagnetic film. Wherein the first non-magnetic film for exchange coupling is Ru, Ir, Rh, Re.
Wherein the magnetizations of the first and second magnetic films are M1 and M2, and the thickness is t.
Let 1, t2 be the respective products M1 × t1 and M2 × t
2 is a substantially different magnetoresistive element. 9. The magnetoresistance effect element according to claim 8, wherein said magnetoresistance effect element is a tunnel type magnetoresistance effect element. 10. An antiferromagnetic film which is magnetically exchange-coupled to the fixed layer, and further includes a base film mainly composed of NiFeCr provided on a side opposite to the fixed layer with respect to the antiferromagnetic film. The magnetoresistive element according to claim 8. 11. A magnetic head for detecting a signal magnetic field from a recording medium, wherein the magnetic head is provided in two gaps including a magnetic material and in a gap between the two shields. A magnetic head including a resistance effect element. 12. A magnetic head for detecting a signal magnetic field from a recording medium, wherein the magnetic head is provided in two gaps including a magnetic material and provided in a gap between the two shields. A magnetic head including a resistance effect element. 13. A magnetic head comprising: a magnetic flux guide section including a magnetic material; and a magnetoresistive element according to claim 1, which detects a signal magnetic field guided by the magnetic flux guide section. 14. A magnetic head comprising: a magnetic flux guide section including a magnetic material; and a magnetoresistive element according to claim 8, which detects a signal magnetic field guided by the magnetic flux guide section. 15. A signal is recorded on a recording medium.
A magnetic recording apparatus comprising: a magnetic head according to any one of claims 1 to 3, an arm on which the magnetic head is mounted, a driving unit that drives the arm, and a signal processing unit that processes the signal and supplies the processed signal to the magnetic head. 16. A signal is recorded on a recording medium.
A magnetic recording apparatus comprising: a magnetic head according to any one of claims 1 to 3, an arm on which the magnetic head is mounted, a driving unit that drives the arm, and a signal processing unit that processes the signal and supplies the processed signal to the magnetic head. 17. A signal is recorded on a recording medium.
A magnetic recording apparatus comprising: a magnetic head according to any one of claims 1 to 3, an arm on which the magnetic head is mounted, a driving unit that drives the arm, and a signal processing unit that processes the signal and supplies the processed signal to the magnetic head. 18. A signal recorded on a recording medium.
A magnetic recording apparatus comprising: a magnetic head according to any one of claims 1 to 3, an arm on which the magnetic head is mounted, a driving unit that drives the arm, and a signal processing unit that processes the signal and supplies the processed signal to the magnetic head. 19. A free layer that easily rotates by an external magnetic field, a nonmagnetic layer, and a fixed layer that is provided on the opposite side of the nonmagnetic layer from the free layer and that does not easily rotate by an external magnetic field. The fixed layer includes: a non-magnetic film for exchange coupling; and first and second magnetic films antiferromagnetically exchange-coupled via the non-magnetic film for exchange coupling. The non-magnetic film for exchange coupling includes a magnetoresistive element including an oxide of Ru, Ir, Rh, or Re; a word line for generating a magnetic field for causing a magnetization reversal of the free layer; A sense line for detecting a change in resistance of the magnetoresistive element; 20. The magnetoresistive memory element according to claim 19, wherein the magnetoresistive element further includes an antiferromagnetic film magnetically exchange-coupled with the fixed layer. 21. The free layer includes a second non-magnetic film for exchange coupling, and third and fourth magnetic films anti-ferromagnetically exchange-coupled via the second non-magnetic film for exchange coupling. The second non-magnetic film for exchange coupling is made of Ru, Ir, Rh, Re.
Wherein the third and fourth magnetic films have magnetizations of M1 and M2 and a thickness of t
Let 1, t2 be the respective products M1 × t1 and M2 × t
20. The device of claim 19, wherein 2 is substantially different. 22. The semiconductor device according to claim 21, wherein at least one of the first to fourth magnetic films contains Co as a main component and B as a main component.
The magnetoresistive effect memory element as described in the above. 23. At least one of the first and second magnetic films contains Co and B as a main component.
10. The magnetoresistive effect memory element according to 9. 24. An antiferromagnetic film magnetically exchange-coupled to the fixed layer, wherein the magnetoresistance element is provided on the opposite side of the fixed layer with respect to the antiferromagnetic film, and is mainly composed of NiFeCr. 20. The magnetoresistive effect memory element according to claim 19, further comprising a base film. 25. A free layer whose magnetization is easily rotated by an external magnetic field, a nonmagnetic layer, and a fixed layer provided on the opposite side of the nonmagnetic layer from the free layer and not easily rotated by an external magnetic field. A magnetoresistive effect element comprising: a first exchange coupling nonmagnetic film; and a first and second magnetic layers antiferromagnetically exchange coupled through the first exchange coupling nonmagnetic film. Wherein the first non-magnetic film for exchange coupling is Ru, Ir, Rh, Re.
Wherein the magnetizations of the first and second magnetic films are M1 and M2, and the thickness is t.
Let 1, t2 be the respective products M1 × t1 and M2 × t
2 is a magnetoresistive memory having substantially different magnetoresistive elements, a word line for generating a magnetic field for causing a reversal of the magnetization of the free layer, and a sense line for detecting a resistance change of the magnetoresistive elements. element. 26. An antiferromagnetic film magnetically exchange-coupled to the fixed layer, wherein the magnetoresistive element is provided on a side opposite to the fixed layer with respect to the antiferromagnetic film, and is mainly composed of NiFeCr. The magnetoresistive effect memory element according to claim 25, further comprising a base film. 27. A memory device comprising the magnetoresistive effect memory device according to claim 19 arranged in a matrix. 28. An antiferromagnetic film magnetically exchange-coupled to the fixed layer, wherein the magnetoresistive element is provided on a side opposite to the fixed layer with respect to the antiferromagnetic film, and is mainly composed of NiFeCr. 28. The memory device according to claim 27, further comprising a base film.