JP2002190552A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) [Summary] [PROBLEMS] Since a plurality of internal terminals are separated from a lead frame and then each internal terminal is bonded to a wafer, all the internal terminals are precisely positioned at predetermined positions on the wafer. It was difficult to mount. In addition, since the position of the frame in which the internal terminals can be provided is limited, it is difficult to arrange the external terminals two-dimensionally on the bottom surface of the semiconductor device to cope with the increase in the number of pins. SOLUTION: An insulating adhesive material 6 is applied to an electrode forming surface of a wafer 13 and a lead frame 10 is adhered to the wafer 13. Then, a frame 11 of the lead frame 10 is cut and removed by a blade. After connecting the electrode 1 of the wafer 13 and the internal terminal portion 4 of the lead frame 10 with a thin metal wire 7, the electrode forming surface 3, the internal terminal portion 4 and the thin metal wire 7 of the wafer 13 are sealed with a sealing resin 9, A boundary portion between the semiconductor elements 2 formed on the wafer 13 is cut and divided by a blade.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a resin-encapsulated semiconductor device having a semiconductor element mounted thereon. The present invention relates to a method for manufacturing a semiconductor device protruding from a mounting surface of the semiconductor device.

[0002]

2. Description of the Related Art Conventionally, semiconductor devices have been progressing toward higher integration and higher functionality due to the trend toward higher performance and lighter and smaller electronic devices. On the other hand, as the resin-encapsulated semiconductor package becomes more highly integrated and more sophisticated, it is required to further increase the number of pins, reduce the thickness, and reduce the size. It has become difficult to reduce the size of the package due to the necessity of leading the leads in the peripheral portion of the package. Therefore, various proposals have been made for a semiconductor device in which an external terminal portion of the lead frame is exposed not from the side portion of the semiconductor device but from the mounting surface of the semiconductor device, using a lead frame smaller than the area of the semiconductor element, and a method for manufacturing the same. I have.

Hereinafter, a conventional semiconductor device will be described with reference to the drawings.

FIG. 8A is a bottom view of a conventional semiconductor device, and FIG. 8B is a cross-sectional view taken along a line DD1 in FIG. 8A.

As shown in FIGS. 8A and 8B, a lead portion 5 having an internal terminal 4 is bonded to an electrode forming surface 3 of a semiconductor element 2 on which an electrode 1 is formed by an insulating adhesive 6. Have been. The electrode 1 and the internal terminal portion 4 are electrically connected by a thin metal wire 7, only the external terminal portion 8 is exposed, and the upper surface is sealed by a sealing resin 9. In addition,
The lead portion 5 is formed by punching a connecting portion (not shown) connecting the tips of the internal terminal portions 4 using a punching die.

Another conventional technique is to select non-defective semiconductor elements from a wafer, arrange them in a matrix, and then arrange a plurality of lead frames having linear frames in a matrix for each row. After bonding along the two opposing sides of the semiconductor element and electrically connecting the electrodes of the semiconductor element and the plurality of internal terminals extending from the frame of the lead frame to the inside of the semiconductor element by thin metal wires, Then, the lead frame and the thin metal wire are sealed with a sealing resin, and a portion of the linear frame is cut and removed together with the sealing resin using a blade to separate the semiconductor elements from each other.

[0007]

However, the conventional semiconductor device has the following problems.

[0008] A lead frame used for a conventional semiconductor device is formed by using a punching die. That is, in order to pass a thin metal wire for electrically connecting the electrode of the semiconductor element to the internal terminal of the lead frame between the internal terminals, the internal terminal is bonded to the semiconductor element before the internal terminal is bonded to the semiconductor element. The frames connecting the two are removed using a punching die, and the internal terminal portions of the separated individual pieces from which the frames have been removed are aligned and adhered to the semiconductor elements. As described above, after separating the plurality of internal terminal portions from the lead frame, the plurality of internal terminal portions are respectively aligned with and bonded to the semiconductor element. It is necessary to perform alignment, and it becomes difficult to mount and bond all the internal terminal portions to predetermined positions of the semiconductor element with high accuracy.

When a lead frame provided with internal terminals extending from two parallel frames is used, the internal terminals can be arranged along a pair of two opposite sides of the semiconductor element. Only columns. Therefore, the number of internal terminal portions that can be provided is smaller than when the internal terminal portions are arranged along each side of the semiconductor element, and the degree of freedom in the arrangement of the internal terminal portions is limited. There is a limit in responding to the increase in the number of pins of the semiconductor device.

The present invention solves the above-mentioned conventional problems. After bonding a lead frame to a wafer on which semiconductor elements are formed, the lead frame is cut and removed using a blade, and the wafer is removed. And a method of manufacturing a semiconductor device in which a plurality of internal terminal portions remain.

[0011]

In order to solve the above-mentioned conventional problems, a method of manufacturing a semiconductor device according to the present invention comprises a frame formed of a metal plate and extending from the frame toward the inside of the frame. A step of preparing a lead frame having a plurality of continuous lead portions formed of an internal terminal portion and a protruding external terminal portion formed on the internal terminal portion as one unit; Bonding a surface of the surface opposite to the surface on which the external terminal portion is formed and an electrode forming surface of a wafer on which a plurality of semiconductor elements are formed in the surface with an insulating adhesive; and Cutting and removing a frame, leaving the internal terminal portion on which the external terminal portion is formed on the electrode forming surface of the wafer, and electrically connecting the electrode of the wafer and the internal terminal portion Sealing the electrode forming surface and the internal terminal portion of the wafer with a sealing resin, and projecting the external terminal portion from the sealing resin, and blades the boundary between the semiconductor elements of the wafer. And dividing the semiconductor device into individual semiconductor devices.

According to such a method of manufacturing a semiconductor device, the internal terminal portion can be extended from an arbitrary side of the frame of the lead frame for a plurality of semiconductor elements formed on the wafer. By dimensionally disposing the semiconductor device on the bottom surface, it is possible to increase the number of pins and reduce the size of the semiconductor device. Further, since a plurality of internal terminals can be simultaneously bonded to the semiconductor wafer, the bonding position accuracy of each internal terminal is improved.

The electrical connection between the electrodes of the wafer and the internal terminals is made by thin metal wires.

Thus, the electrodes of the wafer and the internal terminals can be electrically connected by a simple means with a small electric resistance value.

The electrical connection between the electrodes of the wafer and the internal terminals is made by applying pressure to the bumps formed on the electrodes of the wafer while heating the internal terminals.

According to the method of manufacturing a semiconductor device, the bumps formed on the electrodes of the wafer and the internal terminals are electrically connected to each other, so that the wiring length between the electrodes of the wafer and the internal terminals is reduced. Since a signal delay in the device can be prevented, stable electric characteristics can be secured when the device is used for a high-frequency device or the like.

Further, the step of sealing the electrode forming surface and the internal terminal portion of the wafer with a sealing resin and projecting the external terminal portion from the sealing resin includes the step of forming a recess having a concave portion engaged with the external terminal portion. This is performed by using a stopper mold.

Thus, the external terminal can be made to protrude from the resin surface, and the length of the external terminal can be adjusted.

The length of the external terminal protruding from the sealing resin is 10 to 50 [μm].

Accordingly, the solder paste can be sufficiently formed around the external terminal portions while keeping the height from the circuit board to the upper surface of the semiconductor device low.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a method for manufacturing a semiconductor device according to the present invention will be described below with reference to the drawings. Note that the same components as those used in the conventional example are denoted by the same reference numerals.

First, a lead frame used in the method of manufacturing a semiconductor device according to the present embodiment will be described.

FIG. 1A is a plan view of the lead frame of the present embodiment, and FIG. 1B is a cross-sectional view taken along a line AA1 in FIG. 1A.

As shown in FIG. 1, a lead frame 10 made of a grid-like metal plate has an internal terminal portion 4 extending from a frame 11 toward the inside of a region surrounded by the frame 11. A protruding external terminal portion 12
And the internal terminal portion 4, the external terminal portion 12, and the frame 1
A plurality of the lead portion forming bodies consisting of 1 and 1 constitute one unit. In the present embodiment, of the frame 11
Although the internal terminal portions 4 extend from two opposing sides, the internal terminal portions 4 may extend from any sides of the frame 11. For example, by extending the internal terminal portions 4 from the four sides of the frame 11, A large number of internal terminal portions 4 can be provided corresponding to a multi-pin semiconductor device.

In this embodiment, the lead frame 1
The material of No. 0 is a 42 alloy which is an alloy with iron (Fe) having a nickel (Ni) content of 42 [%]. The thickness of the lead frame 10 is 50 [μm] for the internal terminal portion 4 and the external terminal. Since the portion 12 has a step of 100 [μm] from the internal terminal portion 4, the total thickness of the lead frame where the external terminal portion 12 is formed is 150 [μm]. Since the thickness of the frame 11 is as thin as 50 μm, it can be easily punched out by a punching die in a semiconductor device manufacturing process, but the lead frame 10 may be processed by etching. In the present embodiment, the external terminal portion 12 has a columnar shape, but the shape is not particularly limited, and may be a square columnar shape or another polygonal columnar shape. In this embodiment, a 42 alloy is used as the material of the lead frame 10, but a copper alloy may be used.

As described above, by using the lead frame of the present embodiment, the internal terminal portion can be extended from any side of the frame frame of the lead frame. Therefore, the length of the internal terminal portion is adjusted when the frame frame is cut. Thus, by providing the external terminal portion at a position corresponding to the electrode of the semiconductor element and projecting the external terminal portion two-dimensionally to the bottom surface of the semiconductor device, it is possible to increase the number of pins and reduce the size of the semiconductor device.

Further, the lead frame of the present embodiment is cut and removed with a blade or the like in a state where the lead frame is adhered to the wafer, and the internal terminal portion having the external terminal portion is left on the electrode forming surface of the wafer. Thus, a plurality of internal terminal portions can be simultaneously bonded to the wafer.

Next, a method of manufacturing the semiconductor device according to the present embodiment will be described.

Since the semiconductor device of the present embodiment is manufactured using the above-described lead frame, common contents are omitted, and the same components are denoted by the same reference numerals.

FIG. 2 is a sectional view showing each step of the method for manufacturing a semiconductor device according to the present embodiment.

As shown in FIG. 2A, on the electrode forming surface 3 of the wafer 13 on which a plurality of semiconductor elements 2 on which the electrodes 1 are formed are formed, the thickness of the portion where the internal terminals are bonded is reduced. An insulating adhesive 6 of 50 to 500 [μm] is applied by a printing method. In the present embodiment, the insulating adhesive 6 is a polyimide-based thermoplastic adhesive having a thickness of 100 [μm], but may be a silicon-modified polyimide, a thermosetting adhesive, a sheet-like adhesive, or the like. Good.

Next, as shown in FIG. 2B, the lead frame 10 and the wafer 13 are aligned with each other, and the internal terminals 4 of the lead frame 10 are heated while being applied to the upper surface of the insulating adhesive 6. It is bonded by cooling after pressing.

Next, as shown in FIG. 2C, the frame 11 connecting the internal terminals 4 is cut and removed using a blade, and the plurality of internal terminals 4 are removed from the wafer 1.
3 on the electrode formation surface. Thereby, the frame 11 existing above the internal terminal portions 4 is removed, so that the thin metal wires 7 can pass between the internal terminal portions 4. Since the accuracy of control in the cutting direction of the blade is 10 [μm] or less, the distance between the internal terminal portion and the semiconductor element is 50 [μm] corresponding to the minimum thickness of the insulating adhesive 6. However, the leading edge of the rotating blade does not damage the electrode forming surface of the semiconductor element, and stably cuts the lead frame.
Can be removed.

Next, as shown in FIG. 3A, the electrodes 1 of the wafer 13 and the internal terminals 4 of the lead frame 10 are electrically connected by the thin metal wires 7. Here, the insulating adhesive material 6 sandwiched between the lower surface of the internal terminal portion 4 and the wafer 13 can absorb the impact of the wire bonding to the internal terminal portion 4 and damage the surface of the wafer 13. Can be prevented.

Next, as shown in FIGS. 3B and 3C, the electrode forming surface 3, the fine metal wires 7, and the internal terminals 4 of the wafer 13 are sealed with an epoxy-based sealing resin 9. . In the present embodiment, a sealing mold provided with a concave portion that engages with the external terminal portion 12 of the lead frame 10 is used, and the sealing resin 9 is prevented from flowing into the concave portion during sealing. By engaging the external terminal portion 12 and shifting the sealing surface from the tip of the external terminal portion 12 to the internal terminal portion 4 side, the external terminal portion 12 is moved from the sealing surface to 10 to 50 [μm].
Projecting. That is, the depth of the recess is set to 10 to 5
By setting it to 0 [μm], the protruding length of the external terminal portion 12 corresponding to the depth of the concave portion is secured.

The protrusion length of the external terminal portion 12 is 10
If it is smaller than [μm], the solder paste is not sufficiently formed around the external terminal portion, and the height from the circuit board after mounting the semiconductor device to the upper surface of the semiconductor device needs to be kept low. The protruding length of the terminal portion 12 is 50 [μm]
It is not appropriate to make it larger.

Thereafter, the boundary portion 14 between the semiconductor elements 2
Is cut together with the sealing resin 9 using a blade to divide the semiconductor device into individual semiconductor devices. In the present embodiment, the external terminal 1
Although the semiconductor device 2 is cut from the bottom surface side of the semiconductor device using a blade, the semiconductor device 2 may be cut from the back surface side. When cutting from the bottom side of the semiconductor device, the protruding external terminal is recognized.When cutting from the back side of the semiconductor element, the boundary between the semiconductor elements is cut using infrared light. recognize.

Next, another embodiment of the method for manufacturing a semiconductor device will be described.

The same contents as those in the embodiment of the semiconductor device are omitted.

First, as shown in FIG. 4A, a wafer 13 on which a plurality of semiconductor elements 2 on which electrodes 1 are formed is formed.
An insulating adhesive material 6 having a thickness of 50 to 500 [μm] is applied to a portion of the electrode forming surface 3 to be bonded to the internal terminal portion by a printing method. The insulating adhesive 6 may be a liquid resin or a sheet resin.

Next, as shown in FIG.
A bump 15 is formed on the third electrode 1. In the present embodiment, the bumps 15 are formed by a wire bonding method using a thin metal wire, but the bumps 15 may be formed by a plating method. In addition, in order to securely adhere the internal terminals to the wafer 13, the height of the bump 15 needs to be lower than the height of the insulating adhesive 6. Depending on the height of the bump 40 ~
It is set to 400 [μm].

Next, as shown in FIG. 4C, the lead frame 10 is aligned with the wafer 13 and bonded.

Next, as shown in FIG.
The frame frame 11 existing between the positions where is formed is cut and removed by a blade, and the plurality of internal terminal portions 4 are left on the electrode forming surface of the wafer 13. And bump 1
By pressing the internal terminals 4 while heating them using a thermocompression bonding tool having a built-in heater against the bumps 5, the bumps 15 are formed.
And the internal terminals 4 are electrically connected.

Next, as shown in FIG.
3 is formed by sealing the electrode forming surface 3, the bumps 15, and the internal terminal portions 4 with a sealing resin 9, and engaging the external terminal portions 12 with concave portions provided in a sealing mold to form the external terminal portions 12. Project from the surface. The depth of this recess is 10
By setting the thickness to 50 [μm], the length of the external terminal portion 12 corresponding to the depth of the concave portion can be projected from the resin surface.

Thereafter, the boundary portion 14 between the semiconductor elements 2
Is cut together with the sealing resin 9 using a blade to divide the semiconductor device into individual semiconductor devices.

As described above, by electrically connecting the internal terminal portion and the electrode of the semiconductor element by the bump, the wiring length between the electrode of the semiconductor element and the internal terminal portion of the lead portion is shortened, so that the semiconductor device can be used for a high-frequency device or the like. When applied, it is possible to prevent signal transmission delay.

As described above, according to the method of manufacturing a semiconductor device of the present embodiment, a plurality of internal terminal portions extending from any side of the frame of the lead frame can be simultaneously bonded to the wafer, and the subsequent sealing step By performing an assembling process in a wafer state until the wafer is finally divided into individual semiconductor devices by a blade, it is possible to improve productivity.

Further, the internal terminal portion can be extended from an arbitrary side of the frame of the lead frame, and by adjusting the length of the internal terminal at the time of cutting the frame, a position corresponding to the electrode of the semiconductor element can be obtained. Since an external terminal portion can be provided on the bottom surface, a small, multi-pin semiconductor device in which the external terminal portion is two-dimensionally arranged on the bottom surface can be realized.

Further, by electrically connecting the internal terminal portion and the electrode of the semiconductor element by a bump, the wiring length is shortened, and it is possible to prevent a delay in signal transmission when applied to a high-frequency device. .

Next, the semiconductor device of this embodiment will be described.

Since the semiconductor device of this embodiment is manufactured using the above-described lead frame by the above-described method for manufacturing a semiconductor device, common contents are omitted, and the same components are denoted by the same reference numerals.

FIG. 6A is a bottom view of the semiconductor device of the present embodiment, and FIG. 6B is a cross-sectional view taken along a line BB of FIG. 6A.

As shown in FIGS. 6A and 6B,
The lead portion 5 is bonded to the electrode forming surface 3 of the semiconductor element 2 on which the electrode 1 is formed with an insulating adhesive 6. In this embodiment, a polyimide-based thermoplastic adhesive having a thickness of 100 [μm] is used as the insulating adhesive 6, but a silicon-modified polyimide, a thermosetting adhesive, a sheet-like adhesive, or the like may be used. Good.

The lead portion 5 has an L-shape in which a protruding external terminal portion 12 is formed at the tip of the internal terminal portion 4, and a plurality of them are bonded to the semiconductor element 2. That is, the internal terminal portion 4 and the external terminal portion 12 are integrated in an L-shape and are bonded to the electrode forming surface 3 of the semiconductor element 2. The electrode 1 of the semiconductor element 2 and the internal terminal 4 are electrically connected by a thin metal wire 7, and the electrode forming surface 3, the internal terminal 4 and the thin metal wire 7 of the semiconductor element 2 are sealed by a sealing resin 9. Have been. In this embodiment,
The electrode 1 of the semiconductor element 2 and the internal terminal 4 are electrically connected by a thin metal wire 7.
May be provided above and electrically connected by bumps. In this case, the electrode 1 of the semiconductor element 2 and the internal terminal 4
, And the signal length can be prevented in a high-frequency device or the like.

The height of the highest point of the fine metal wire electrically connecting the internal terminal portion and the electrode of the wafer from the internal terminal portion is 40 [μm], and the highest point of the fine metal wire is from the bottom of the semiconductor device to the bottom of the semiconductor device. The thickness up to the resin surface is 10 to 50 [μm]. On the other hand, the external terminal 12 is
Since the external terminal 12 has a step of [μm], the length of the external terminal 12 protruding from the sealing resin 9 is 10 to 5 in the present embodiment.
0 [μm]. For the electrical connection between the external terminal portions 12 and the electrode portions of the circuit board, a solder paste is supplied to the electrode portions of the circuit board in advance, heated and melted when the semiconductor device is mounted, and then solidified. If the protruding length of the external terminal portion 12 is smaller than 10 [μm], the solder paste is not sufficiently formed around the external terminal portion, and from the circuit board after mounting the semiconductor device to the upper surface of the semiconductor device. It is not appropriate to make the protruding length of the external terminal portion 12 larger than 50 [μm] because it is necessary to keep the height of the external terminal portion 12 low.

Next, another embodiment of the semiconductor device will be described.

FIG. 7A is a bottom view of the semiconductor device according to the present embodiment, and FIG. 7B is a cross-sectional view taken along the line CC of FIG. 7A.

As shown in FIGS. 7A and 7B, the internal terminal 4 on the electrode forming surface 3 of the semiconductor element 2 may be provided outside the position of the electrode 1. Thereby, the external terminal portion 12 can be provided around the bottom surface of the semiconductor device.

The shape of the lead portion formed by the internal terminal portion 4 and the external terminal portion 12, the material of the insulating adhesive 6 and the material and the forming method of the thin metal wire 7 are shown in FIGS. This is the same as the case shown in b).

As described above, according to the semiconductor device of the present embodiment, the internal terminal of the lead frame extends from an arbitrary side of the frame, and the length of the internal terminal is adjusted when the frame is cut. An external electrode portion is provided at a position corresponding to the electrode, and a small, multi-pin semiconductor device in which external terminal portions are two-dimensionally arranged on the bottom surface can be realized.

Further, the semiconductor device of the present embodiment has no external terminal portion on the side and protrudes outside from the sealing resin on the mounting surface of the semiconductor device. Is realized, and the mounting area on the circuit board can be reduced, and since it can be directly mounted on the circuit board, it is possible to ensure an improvement in connection reliability.

Further, since the external terminal portion protrudes from the sealing resin, the external terminal portion and the connecting member which are generated when a connecting member such as solder is connected to the external terminal portion which does not protrude as in the related art. Problems such as breakage occurring at the interface can be prevented.

[0063]

According to the method of manufacturing a semiconductor device of the present invention, a plurality of internal terminals extending from any side of a frame of a lead frame are simultaneously bonded to a wafer, and the frame is cut using a blade. By removing them, the productivity can be improved, and the bonding position accuracy of the internal terminals can be improved, and a small-sized, multi-pin semiconductor device in which the external terminals project two-dimensionally from the bottom surface can be realized.

[Brief description of the drawings]

FIG. 1 is a view showing a lead frame according to an embodiment of the present invention;

FIG. 2 is a sectional view of each step of a method for manufacturing a semiconductor device according to one embodiment of the present invention;

FIG. 3 is a sectional view of each step of the method for manufacturing a semiconductor device according to one embodiment of the present invention;

FIG. 4 is a sectional view of each step of the method for manufacturing a semiconductor device according to one embodiment of the present invention;

FIG. 5 is a sectional view of each step of the method for manufacturing a semiconductor device according to one embodiment of the present invention;

FIG. 6 is a diagram showing a semiconductor device according to one embodiment of the present invention;

FIG. 7 is a diagram showing a semiconductor device according to an embodiment of the present invention;

FIG. 8 illustrates a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electrode 2 Semiconductor element 3 Electrode formation surface 4 Internal terminal part 5 Lead part 6 Insulating adhesive material 7 Metal wire 8 External terminal part 9 Sealing resin 10 Lead frame 11 Frame frame 12 External terminal part 13 Wafer 14 Boundary part 15 Bump

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H01L 21/60 301 H01L 21/60 301B 23/28 23/28 A 23/50 23/50 K F term (reference) 4M109 AA01 BA01 CA21 CA22 DA10 DB17 FA04 5F044 AA01 GG03 GG08 5F061 AA01 BA01 CA21 CA22 CB13 DD12 5F067 AA01 AA10 AB04 BA03 BB08 BC12 BE10 CC03 CC08

Claims (5)

[Claims] 1. A lead portion comprising a frame formed of a metal plate, an internal terminal extending from the frame toward the inside of the frame, and a protruding external terminal formed on the internal terminal. A step of preparing a lead frame having a plurality of formed bodies continuously as one unit, and a step of forming a plurality of semiconductor elements on a surface of the internal terminal portion opposite to a surface on which the external terminal portion is formed; Bonding the electrode forming surface of the wafer formed in the surface with an insulating adhesive, cutting and removing the frame of the lead frame, and removing the internal terminal portion on which the external terminal portion is formed by removing the wafer from the wafer. Leaving the electrode on the surface of the wafer, electrically connecting the electrodes of the wafer to the internal terminals, and sealing the electrode formation surface and the internal terminals of the wafer with a sealing resin. A step of projecting the external terminal portion from the sealing resin, and a step of cutting a boundary portion between semiconductor elements of the wafer with a blade and dividing the wafer into individual semiconductor devices. Manufacturing method. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the electrical connection between the electrode of the wafer and the internal terminal portion is made by a thin metal wire. 3. An electric connection between an electrode of a wafer and an internal terminal portion is performed by applying pressure while heating the internal terminal portion to a bump formed on the electrode of the wafer. 13. The method for manufacturing a semiconductor device according to item 5. 4. The step of sealing an electrode forming surface and an internal terminal portion of a wafer with a sealing resin and projecting an external terminal portion from the sealing resin includes forming a sealing portion provided with a concave portion engaging with the external terminal portion. The method according to claim 1, wherein the method is performed by using a stopper. 5. The external terminal portion protruding from the sealing resin has a length of 10 to 50 μm.
A method for manufacturing a semiconductor device according to claim 4.