JP2002184765A - Cleaning gas - Google Patents
Cleaning gasInfo
- Publication number
- JP2002184765A JP2002184765A JP2000384111A JP2000384111A JP2002184765A JP 2002184765 A JP2002184765 A JP 2002184765A JP 2000384111 A JP2000384111 A JP 2000384111A JP 2000384111 A JP2000384111 A JP 2000384111A JP 2002184765 A JP2002184765 A JP 2002184765A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- cleaning
- cleaning gas
- cof
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 101100328843 Dictyostelium discoideum cofB gene Proteins 0.000 abstract 1
- GMLJCMXFMUEABC-UHFFFAOYSA-N [difluoro(fluorooxy)methyl] hypofluorite Chemical compound FOC(F)(F)OF GMLJCMXFMUEABC-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 abstract 1
- SMBZJSVIKJMSFP-UHFFFAOYSA-N trifluoromethyl hypofluorite Chemical compound FOC(F)(F)F SMBZJSVIKJMSFP-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000010792 warming Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＣＶＤ法、スパッ
タリング法、ゾルゲル法、蒸着法を用いて薄膜、厚膜、
粉体、ウイスカ等を製造する装置において、装置内壁、
冶具等に堆積した不要な堆積物を除去するためのクリー
ニングガスに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film, a thick film, a CVD method, a sputtering method, a sol-gel method, and a vapor deposition method.
In an apparatus for producing powder, whisker, etc., the inner wall of the apparatus,
The present invention relates to a cleaning gas for removing unnecessary deposits deposited on a jig or the like.
【０００２】[0002]
【従来の技術および発明が解決しようとする課題】半導
体工業を中心とした薄膜デバイス製造プロセス、光デバ
イス製造プロセスや超鋼材料製造プロセスでは、ＣＶＤ
法、スパッタリング法、ゾルゲル法、蒸着法を用いて種
々の薄膜、厚膜、粉体、ウイスカが製造されている。こ
れらを製造する際には膜、ウイスカや粉体を堆積させる
べき目的物上以外の反応器内壁、目的物を担持する冶具
等にも堆積物が生成する。不要な堆積物が生成するとパ
ーティクル発生の原因となるため良質な膜、粒子、ウイ
スカを製造することが困難になるため随時除去しなけれ
ばならない。また、半導体やＴＦＴ等において回路を構
成する各種の薄膜材料に回路パターンを形成するために
薄膜材料を部分的に取り除くガスエッチングを行う必要
があり、さらに、ＣＶＭ（ケミカルヴェーパーマシーニ
ング）においてはＳｉインゴット等をガスエッチングに
より切断する必要がある。2. Description of the Related Art In a thin film device manufacturing process, an optical device manufacturing process and a super steel material manufacturing process mainly in the semiconductor industry, CVD is used.
Various thin films, thick films, powders, and whiskers have been manufactured by using a method, a sputtering method, a sol-gel method, and an evaporation method. When these are produced, deposits are also formed on the inner wall of the reactor other than the target on which the film, whisker and powder are to be deposited, and on the jig supporting the target. The generation of unnecessary deposits causes the generation of particles, which makes it difficult to produce high quality films, particles, and whiskers, and must be removed as needed. In addition, it is necessary to perform gas etching to partially remove the thin film material in order to form a circuit pattern on various thin film materials constituting a circuit in a semiconductor, a TFT, and the like. Further, in CVM (chemical vapor machining), It is necessary to cut a Si ingot or the like by gas etching.
【０００３】このような不要な堆積物の除去を行ったり
材料の切断を行ったりするエッチングガスやクリーニン
グガスに求められる性能としては、クリーニング対象
物に対する反応速度が高い、クリーニング排ガスの処
理が比較的容易である、比較的大気中で不安定であ
り、地球温暖化に対する影響が小さい、等が望まれる。[0003] The performance required of an etching gas or a cleaning gas for removing such unnecessary deposits or cutting a material is relatively high in the reaction rate with respect to an object to be cleaned and the processing of cleaning exhaust gas. It is desired to be easy, relatively unstable in the atmosphere, and have little effect on global warming.
【０００４】しかし、現状では、このような不要な堆積
物を除去するために、Ｃ2Ｆ6、ＣＦ 4 、ＮＦ3等のクリ
ーニングガスが使用されている。しかしながら、これら
のガスは非常に安定な化合物でありクリーニング後の排
ガスの処理が困難であり、処理のために高温が必要であ
るためランニングコストが比較的高価である。また、環
境中に安定に存在し地球温暖化係数が高いため環境への
悪影響が問題となっている。However, at present, such unnecessary deposition
C to remove objectsTwoF6, CF Four , NFThreeChestnuts
Cleaning gas is used. However, these
Gases are very stable compounds and can be exhausted after cleaning.
Gas processing is difficult and requires high temperatures for processing.
Therefore, the running cost is relatively expensive. Also, the ring
Stable in the environment and high in global warming potential,
The negative effects are a problem.
【０００５】また、ＣＯＦ2は、高い加水分解性を有す
る化合物であり大気中に放出するとＣＯ2とＨＦに分解
するため地球温暖化の影響は無い。しかしながら、上述
したクリーニングガスと比較してクリーニング性能が劣
る問題があった。[0005] Further, COF 2 is a compound having a high hydrolyzability and is decomposed into CO 2 and HF when released into the atmosphere, so that there is no effect of global warming. However, there is a problem that the cleaning performance is inferior to the cleaning gas described above.
【０００６】[0006]
【課題を解決するための具体的手段】本発明者らは、鋭
意検討の結果、ＣＯＦ2に、ＣＦ3ＯＦ、ＣＦ2（Ｏ
Ｆ）2、ＣＦ3ＯＯＣＦ3、Ｆ2のうちから選ばれる少なく
とも１種のガスを混合することにより上述した問題を解
決できること見いだした。The present inventors have made intensive studies and found that COF 2 contains CF 3 OF, CF 2 (O 2
It has been found that the above-mentioned problem can be solved by mixing at least one gas selected from F) 2 , CF 3 OOCF 3 , and F 2 .
【０００７】すなわち、本発明は、クリーニング性能が
劣るＣＯＦ2に化学的に活性で加水分解性あるいは水酸
化ナトリウムなどのアルカリとの反応性を有するＣＦ3
ＯＦ、ＣＦ2（ＯＦ）2、Ｆ2、ＣＦ3ＯＯＣＦ3を混合
し、クリーニング性能の向上を図ると共に、除害が容易
で地球温暖化の問題がない高性能なクリーニングガスを
提供するものである。That is, the present invention, CF 3 reactive with alkali such hydrolyzable or sodium hydroxide in a chemically active COF 2 that cleaning performance is poor
OF, CF 2 (OF) 2 , F 2 , and CF 3 OOCF 3 are mixed to improve cleaning performance, and provide a high-performance cleaning gas that is easy to remove and has no problem of global warming. is there.
【０００８】本発明が対象とするエッチングもしくはク
リーニングを行うべき物質は、Ｂ、Ｐ、Ｗ、Ｓｉ、Ｔ
ｉ、Ｖ、Ｎｂ、Ｔａ、Ｓｅ、Ｔｅ、Ｍｏ、Ｒｅ、Ｏｓ、
Ｉｒ、Ｓｂ、Ｇｅ、Ａｕ、Ａｇ、Ａｓ、Ｃｒ及びその化
合物、具体的には酸化物、窒化物、炭化物及びこれらの
合金が挙げられる。The substances to be etched or cleaned in the present invention are B, P, W, Si, T
i, V, Nb, Ta, Se, Te, Mo, Re, Os,
Examples include Ir, Sb, Ge, Au, Ag, As, Cr and compounds thereof, specifically, oxides, nitrides, carbides, and alloys thereof.
【０００９】また、クリーニングガスの混合の方法は、
ボンベ内で予め混合しても良く、各ガスを個別に配管中
で混合して使用しても良い。但し、ＣＦ2（ＯＦ）2との
混合ガスをボンベ内で加圧充填する場合、ＣＦ2（Ｏ
Ｆ）2は、４０％以下１％以上が好ましい。ＣＦ2（Ｏ
Ｆ）2は、自己分解性が高いため、４０％以上混合する
と外部から何らかのエネルギーが自己分解する可能性が
あり、また１％以下ではクリーニング速度向上の効果が
認められないため好ましくない。また、Ｆ2をボンベ内
で充填する場合は、ボンベ材質の耐久性の問題、さら
に、ボンベ内で長期間高圧保存するとＣＦ3ＯＦの生成
による組成変化も懸念されるため、２０％以下が好まし
い。しかし、１％以下になるとクリーニング性能の向上
効果があまり認められないため好ましくない。次にＣＦ
3ＯＦは、３００℃以上の高温下でプラズマクリーニン
グを行う場合は、装置材料に腐蝕を考慮して５０％以下
の濃度で混合することが好ましく、１％未満では、クリ
ーニング性能の向上が認められないため好ましくない。
また、必要に応じてこれらの混合したクリーニングガス
にＯ 2、Ｎ2Ｏなどの酸素含有ガスをさらに混合しても良
い。The method of mixing the cleaning gas is as follows.
The gases may be mixed in advance in a cylinder, and each gas must be
May be used as a mixture. However, CFTwo(OF)TwoWith
When the mixed gas is charged under pressure in a cylinder, CFTwo(O
F)TwoIs preferably 40% or less and 1% or more. CFTwo(O
F)TwoIs highly self-decomposable, so it is mixed at least 40%
And there is a possibility that some energy from the outside will self-decompose
Yes, and at 1% or less, the effect of improving the cleaning speed
It is not preferable because it is not recognized. Also, FTwoInside the cylinder
When filling with
When stored for a long time under high pressure in a cylinder, CFThreeGenerate OF
20% or less
No. However, when it is less than 1%, the cleaning performance improves.
It is not preferable because the effect is not so much recognized. Next, CF
ThreeOF is plasma cleaning at high temperature of 300 ° C or higher.
50% or less in consideration of corrosion in equipment materials
Is preferably mixed at a concentration of less than 1%.
This is not preferable because no improvement in the cleaning performance is recognized.
Also, if necessary, these mixed cleaning gases
To O Two, NTwoOxygen-containing gas such as O may be further mixed.
No.
【００１０】また、ＣＯＦ2にＣＦ3ＯＦ、Ｆ2を予めボ
ンベ内で混合して保管するときは６０℃以下で保管する
ことが好ましく、ＣＦ2（ＯＦ）2との混合の場合は４０
℃以下が好ましい。When COF 2 is mixed with CF 3 OF and F 2 beforehand in a cylinder, it is preferable to store the mixture at a temperature of 60 ° C. or lower, and in the case of mixing with CF 2 (OF) 2 , the mixture is stored at 40 ° C.
C. or less is preferred.
【００１１】該混合ガスでクリーニングするときの温度
は、例えば容量結合方式のプラズマ発生電極を有する装
置の場合、電極の材質がＡｌの場合は、電極温度４００
℃以下、ステンレスの場合は、２５０℃以下が材質の耐
久性を抗力すると好ましい。圧力は、プラズマ発生器の
種類に応じて適切な条件を選定すればよいが、ラジカル
寿命を考慮すると、リモートプラズマ方法でクリーニン
グする場合は、１３．３２ｋＰａ以下、更に好ましく
は、０．１３〜１．３３ｋＰａの範囲が好ましく、平行
平板型電極によるプラズマクリーニングの場合は、１．
３３Ｐａ〜１．３３ｋＰａの範囲が好ましい。The temperature for cleaning with the mixed gas is, for example, an apparatus having a capacitively-coupled plasma generating electrode, and an electrode temperature of 400 when the electrode material is Al.
C. or less, and in the case of stainless steel, 250 C. or less is preferable as resistance to the durability of the material. The pressure may be selected under appropriate conditions according to the type of the plasma generator. In consideration of the radical life, when cleaning is performed by the remote plasma method, the pressure is 13.32 kPa or less, more preferably 0.13 to 1 kPa. .33 kPa is preferable, and in the case of plasma cleaning with a parallel plate type electrode, 1.
The range of 33 Pa to 1.33 kPa is preferred.
【００１２】[0012]
【実施例】以下、実施例により本発明を詳細に説明する
が、本発明はかかる実施例に限定されるものではない。EXAMPLES The present invention will be described below in detail with reference to examples, but the present invention is not limited to these examples.
【００１３】実施例１〜２２、比較例１〜５ ＣＯＦ2に、ＣＦ3ＯＦ、ＣＦ2（ＯＦ）2、ＣＦ3ＯＯＣ
Ｆ3、Ｆ2を種々の割合で混合してＳｉのプラズマエッチ
ング速度を測定した。エッチング条件は、電力密度０．
４Ｗ／ｃｍ2、基板温度：室温、圧力：２６．６Ｐａ、
流量１００ＳＣＣＭで実施した。その結果を表１に示し
た。なお、エッチング速度は±１０％程度の誤差を含
む。この結果から、ＣＯＦ2の９９．５〜１００％濃度
ガスを使用した場合と比較して高いエッチング速度が得
られることが判る。Examples 1 to 22 and Comparative Examples 1 to 5 COF 2 was replaced with CF 3 OF, CF 2 (OF) 2 , CF 3 OOC
F 3 and F 2 were mixed at various ratios, and the plasma etching rate of Si was measured. The etching conditions are a power density of 0.
4 W / cm 2 , substrate temperature: room temperature, pressure: 26.6 Pa,
The run was performed at a flow rate of 100 SCCM. The results are shown in Table 1. The etching rate includes an error of about ± 10%. From this result, it can be seen that a higher etching rate can be obtained as compared with the case where a gas having a COF 2 concentration of 99.5 to 100% is used.
【００１４】[0014]
【表１】 [Table 1]
【００１５】実施例２３〜２６、比較例６ 下記エッチング条件にてＷのエッチングを実施した。そ
の結果、何れの条件でもＣＯＦ2が１００％濃度の場合
と比較して高いエッチング速度が得られており、クリー
ニングガスとしての性能が向上していることが解る。こ
れらの結果を表２に示した。エッチング条件 電力密度０．４Ｗ／ｃｍ２、基板温度：２５０℃、圧
力：５３．３Ｐａ、 総流量１００ＳＣＣＭExamples 23 to 26, Comparative Example 6 W was etched under the following etching conditions. As a result, it was found that a higher etching rate was obtained as compared with the case where the COF 2 had a concentration of 100% under any of the conditions, and that the performance as a cleaning gas was improved. Table 2 shows the results. Etching conditions Power density 0.4 W / cm 2 , substrate temperature: 250 ° C., pressure: 53.3 Pa, total flow rate 100 SCCM
【００１６】[0016]
【表２】 [Table 2]
【００１７】比較例７ ＳｉＨ2Ｃｌ2とＮＨ4を原料としてプラズマＣＶＤを行
い、接地電極上に約１．０μｍの厚みのアモルファス状
の水素含有窒化珪素を製作した。その際の反応器の器壁
及び反応装置の底部には茶色の膜状あるいは粉状の化合
物が堆積していた。この反応装置にＣＯＦ2を５３．３
Ｐａの圧力で１００ＳＣＣＭ流通させ、３０分間プラズ
マを発生させた（０．３Ｗ／ｃｍ2)。反応後、反応器内
壁を観察したところ、接地電極上の膜は消失していた
が、反応器壁と底部の膜及び粉体は除去できていなかっ
た。COMPARATIVE EXAMPLE 7 Plasma CVD was carried out using SiH 2 Cl 2 and NH 4 as raw materials to produce amorphous hydrogen-containing silicon nitride having a thickness of about 1.0 μm on a ground electrode. At that time, a brown film or powdery compound was deposited on the reactor wall and the bottom of the reactor. 53.3 COF 2 was added to the reactor.
Plasma was generated at a pressure of Pa at 100 SCCM for 30 minutes (0.3 W / cm 2 ). After the reaction, the inner wall of the reactor was observed. As a result, the film on the ground electrode had disappeared, but the film and the powder on the reactor wall and the bottom could not be removed.
【００１８】実施例２７ ＳｉＨ2Ｃｌ2とＮＨ4を原料としてプラズマＣＶＤを行
い、接地電極上に約１．０μｍの厚みのアモルファス状
の水素含有窒化珪素を製作した。その際の反応器の器壁
及び反応装置の底部には茶色の膜状あるいは粉状の化合
物が堆積していた。この反応装置にＣＯＦ2にＣＦ3ＯＦ
を２０％添加したガスを５３．３Ｐａの圧力で１００Ｓ
ＣＣＭ流通させ、３０分間プラズマを発生させた（０．
３Ｗ／ｃｍ2)。反応後、反応器内壁を観察したところ、
接地電極上の膜も反応器壁と底部の膜及び粉体も消失し
ていた。EXAMPLE 27 Plasma CVD was performed using SiH 2 Cl 2 and NH 4 as raw materials to produce amorphous hydrogen-containing silicon nitride having a thickness of about 1.0 μm on the ground electrode. At that time, a brown film or powdery compound was deposited on the reactor wall and the bottom of the reactor. In this reactor, CF 3 OF was added to COF 2
At a pressure of 53.3 Pa for 100 S
CCM was allowed to flow and plasma was generated for 30 minutes (0.
3 W / cm 2 ). After the reaction, when the inner wall of the reactor was observed,
Both the film on the ground electrode and the film and powder on the reactor wall and bottom had disappeared.
【００１９】実施例２８〜３０ 実施例２７と同様の方法で、ＣＦ3ＯＦをＣＦ2（ＯＦ）
2、ＣＦ3ＯＯＣＦ3並びにＦ2に変えてクリーニングを実
施しても同様の結果が得られた。Examples 28 to 30 In the same manner as in Example 27, CF 3 OF was converted to CF 2 (OF).
Similar results were obtained when cleaning was performed in place of 2 , CF 3 OOCF 3 and F 2 .
【００２０】[0020]
【発明の効果】本発明のクリーニングガスは、除害が容
易で地球温暖化の影響が無く薄膜形成装置を容易にクリ
ーニングできる。The cleaning gas of the present invention can easily clean a thin film forming apparatus without being affected by global warming because it is easy to remove.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川島 忠幸 埼玉県川越市今福中台2805番地 セントラ ル硝子株式会社化学研究所内 (72)発明者 田村 哲也 埼玉県川越市今福中台2805番地 セントラ ル硝子株式会社化学研究所内 (72)発明者 田仲 健二 埼玉県川越市今福中台2805番地 セントラ ル硝子株式会社化学研究所内 (72)発明者 戸田 誠 埼玉県川越市今福中台2805番地 セントラ ル硝子株式会社化学研究所内 Ｆターム(参考） 4K029 DA01 EA05 FA09 4K030 AA03 AA06 AA13 BA40 BB05 DA06 KA08 KA30 4K057 DA01 DB01 DB06 DB08 DD01 DE06 DG12 DM02 DN10 5F004 AA15 BA04 DA00 DA30 DB01 DB08 DB10 DB12 DB13 5F045 AA03 AB04 AC03 AC12 EB06 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Tadayuki Kawashima 2805 Imafukunakadai, Kawagoe City, Saitama Prefecture Inside the Chemical Research Laboratory (72) Inventor Tetsuya Tamura 2805 Imafukunakadai, Kawagoe City, Saitama Prefecture Central Glass Inside the Chemical Research Laboratory Co., Ltd. (72) Inventor Kenji Tanaka 2805, Imafukunakadai, Kawagoe-shi, Saitama Central Glass Co., Ltd. F term in the chemical research laboratory (reference) 4K029 DA01 EA05 FA09 4K030 AA03 AA06 AA13 BA40 BB05 DA06 KA08 KA30 4K057 DA01 DB01 DB06 DB08 DD01 DE06 DG12 DM02 DN10 5F004 AA15 BA04 DA00 DA30 DB01 DB08 DB10 DB12 DB13 5F043 AC03
Claims (1)
部品、配管等に堆積した不要な堆積物を除去するための
クリーニングガスで、ＣＯＦ2に、ＣＦ2（ＯＦ） 2、Ｃ
Ｆ3ＯＦ、ＣＦ3ＯＯＣＦ3、またはＦ2を少なくとも１種
以上混合したクリーニングガス。An inner wall of a thin film forming apparatus, a jig of the apparatus,
For removing unnecessary deposits accumulated on parts, piping, etc.
Cleaning gas, COFTwoAnd CFTwo(OF) Two, C
FThreeOF, CFThreeOOCFThreeOr FTwoAt least one
Cleaning gas mixed above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000384111A JP2002184765A (en) | 2000-12-18 | 2000-12-18 | Cleaning gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000384111A JP2002184765A (en) | 2000-12-18 | 2000-12-18 | Cleaning gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002184765A true JP2002184765A (en) | 2002-06-28 |
Family
ID=18851646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000384111A Pending JP2002184765A (en) | 2000-12-18 | 2000-12-18 | Cleaning gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002184765A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004049421A1 (en) * | 2002-11-27 | 2004-06-10 | Tokyo Electron Limited | Method for cleaning substrate processing chamber |
| EP1498940A3 (en) * | 2003-07-15 | 2005-08-24 | Air Products And Chemicals, Inc. | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
| US7942974B2 (en) | 2004-09-29 | 2011-05-17 | Kabushiki Kaisha Toshiba | Method of cleaning a film-forming apparatus |
| US10872784B2 (en) | 2017-11-16 | 2020-12-22 | Samsung Electronics Co., Ltd. | Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture |
-
2000
- 2000-12-18 JP JP2000384111A patent/JP2002184765A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004049421A1 (en) * | 2002-11-27 | 2004-06-10 | Tokyo Electron Limited | Method for cleaning substrate processing chamber |
| US7456109B2 (en) | 2002-11-27 | 2008-11-25 | Tokyo Electron Limited | Method for cleaning substrate processing chamber |
| EP1498940A3 (en) * | 2003-07-15 | 2005-08-24 | Air Products And Chemicals, Inc. | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
| KR100681281B1 (en) * | 2003-07-15 | 2007-02-12 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Use of hypofluorite, fluoroperoxide and / or fluorotrioxide as oxidant in fluorocarbon etch plasma |
| US7942974B2 (en) | 2004-09-29 | 2011-05-17 | Kabushiki Kaisha Toshiba | Method of cleaning a film-forming apparatus |
| US10872784B2 (en) | 2017-11-16 | 2020-12-22 | Samsung Electronics Co., Ltd. | Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture |
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