JP2002184558A - heater - Google Patents

Abstract

(57) [Summary] [Problem] Despite rapid energization / interruption to a resistance heating element, the substrate is not damaged or the resistance heating element is not disconnected, and the life of the heater is long. To provide a heater capable of realizing rapid temperature rise and fall. The heater includes a plurality of segments having a heat generating function for heating an object to be heated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heater used in a semiconductor manufacturing / inspection apparatus and the like, and more particularly, to a heater which is less likely to be damaged by a thermal shock or the like, and which can realize uniform heating of a heated object. And a heater excellent in high-speed temperature raising / lowering performance.

[0002]

2. Description of the Related Art An electronic circuit of a semiconductor product is formed by applying a photosensitive resin as an etching resist on a silicon wafer and then performing an etching step and the like. In this step, since the photosensitive resin applied to the surface of the silicon wafer is applied by a spin coater or the like, it needs to be dried after the application. The drying process is performed by placing a silicon wafer coated with a photosensitive resin on a hot plate (hereinafter simply referred to as a “heater”) and heating the silicon wafer. Conventionally, as such a heater for a semiconductor manufacturing / inspection apparatus, a heater in which a heating element is wired on a substrate made of a metal plate (such as an aluminum base) is used.

However, when such a heater made of a metal substrate is used for drying a semiconductor product, there are the following problems. That is, since the substrate of the heater is made of metal, the thickness of the substrate must be increased to 15 mm or more. This is because, in a thin metal substrate, warpage or distortion occurs due to thermal expansion caused by heating, and the wafer placed on the substrate is damaged or tilted. In addition, such a metal heater has a problem that it is heavy and bulky due to its thickness.

When the heating temperature of a heater is controlled by changing the amount of voltage or current applied to a heating element attached to a substrate (made of metal), if the thickness of the substrate is large, the temperature of the substrate becomes large. There is also a problem that the substrate does not quickly follow the variation in the amount and the temperature control characteristic of the substrate is poor. On the other hand, Japanese Patent Application Laid-Open No. 11-40330 proposes a ceramic heater using a nitride ceramic as a substrate. FIG. 12 is a bottom view schematically showing a conventional ceramic heater using a nitride ceramic as a substrate. In the ceramic heater 80, the disk-shaped ceramic substrate 8
A substantially concentric resistance heating element 82 is formed on the bottom surface of the first heating element 1. In addition, a through hole 83 for inserting a lifter pin and a bottomed hole 84 for burying a temperature measuring element are formed. By energizing the heating element 82, a silicon wafer or the like placed on the opposite side (hereinafter referred to as a heating surface) on which the resistance heating element 82 is formed can be uniformly heated.

[0005]

However, in the conventional ceramic heater 80 having such a structure, although a nitride ceramic having toughness and excellent mechanical properties is used as a substrate material among ceramics, a silicon wafer is used. When heating is attempted, there is a problem that an uneven temperature distribution is inevitably generated on the heating surface of the ceramic heater 80.

[0006] Further, if the heating rate or the cooling rate of the ceramic heater 80 is increased, there is another problem that the ceramic substrate 81 itself is damaged by thermal shock.
One of the causes may be that the ceramic substrate 81 constituting the ceramic heater 80 has a poor flatness, and that the ceramic substrate 81 has a single large disk shape. In particular, when rapid heating and cooling are repeated, the thermal shock received by the ceramic substrate 81 is
Since it becomes geometrically larger in proportion to the size of the substrate,
The frequency of substrate breakage increases.

The present invention has been made in view of such a problem, and has little effect of a heat cycle in which heating and cooling are repeated, is resistant to thermal shock caused by the heat cycle, and has a high temperature rise and a low temperature fall. An object of the present invention is to propose a heater which can realize characteristics and is excellent in maintaining temperature uniformity of a heating surface.

[0008]

Means for Solving the Problems To achieve the above object, the present inventors first studied the causes of breakage of a ceramic substrate by using the substrate. In spite of the temperature control, a non-uniform temperature distribution is generated on the ceramic substrate or the main reason why the substrate is damaged is that the ceramic substrate is finished with one sheet. I figured it out. That is, the thermal load (thermal stress) on the ceramic substrate increases in proportion to the area thereof, so that only one ceramic substrate is used.
If the diameter is large, breakage is apt to occur, and the size also tends to cause uneven temperature.

Further, the problem of the metal heater described in Japanese Patent Application Laid-Open No. 11-40330, that is, in order to ensure the flatness of the heating surface, the metal plate must be thickened. As a result, the problem that the temperature raising / lowering performance is reduced also results from the fact that the metal plate is finished with one sheet.

Further, in such a metal heater, its own weight increases in proportion to the area of the metal. Therefore, in a single heater having a large area, the heater is bent and the flatness of the heating surface is reduced.
In order to avoid this, the thickness of the substrate must be increased, the heat capacity increases, and the temperature rise and fall characteristics deteriorate.

The inventors of the present invention have continued their research and have found that a heat diffusion substrate such as a ceramic substrate or a metal substrate is divided into segments having a small area. The present invention has been found to be effective for solving the above-mentioned problem, or to use a plurality of columnar bodies, thereby completing the present invention.

That is, the present invention is a heater characterized in that a plurality of segments having a heating function for heating an object to be heated are provided. The present invention is characterized in that a heater is configured by collecting a plurality of segments having a heat generating function for heating an object to be heated.

In the heater of the present invention, since the area per segment is relatively smaller than that of a single heater, the thermal stress is also reduced, and the heater is less likely to be broken by a thermal shock. It becomes possible to do. In addition, since its own weight is small, the amount of bending is small, and as a result, a semiconductor product such as a semiconductor wafer or a semiconductor chip (hereinafter, referred to as an object to be heated) is combined with a substrate (hereinafter, also simply referred to as a substrate) or a columnar shape combining each segment. The distance from the body becomes constant, and the object to be heated can be heated uniformly.

In the present invention, the object to be heated and the substrate, or the object to be heated and the column may be brought into direct contact with each other, and the object to be heated is separated from the substrate or the column by about 5 to 5000 μm. You may hold and heat. It is desirable that the substrate or the columnar body segment having the heat generating function be arranged in a plane. This is because the distance from the object to be heated is easily made constant. The term “planar arrangement” means that in the case of a substrate, the upper surface thereof forms a substantially flat surface, and in the case of a columnar segment, the top or horizontal of the columnar segment placed vertically or obliquely. This means that the column segments placed sideways in the direction are aligned so as to form a plane.

It is desirable that each of the segments such as the substrate and the columnar body having the heat generating function has a position adjusting mechanism for adjusting the vertical position thereof. This is because the position in the vertical direction can be adjusted, the distance to the object to be heated can be adjusted, and the object to be heated can be uniformly heated.

The heater of the present invention can be used as a semiconductor manufacturing apparatus for heating a semiconductor product, for example, a coater developer, an etcher, a sputtering apparatus, an electrostatic chuck, and the like, and a semiconductor inspection apparatus, for example, a wafer prober. Can be used for

The diameter of the region (heater) constituted by the set of segments is desirably 200 mm or more. The reason for this is that when a large heater having a diameter of 200 mm or more is used, problems such as destruction due to thermal shock and temperature non-uniformity are particularly likely to occur, and the present invention is effective. Further, regarding the operating temperature range, 100 to 200 ° C.
Low temperature region, 200-400 ° C medium temperature region, 400-8
It can be used in each region of the high temperature region of 00 ° C.

When a heater is used as a substrate by combining the segments, the thickness of the substrate is 1
Desirably, it is less than 5 mm. This is because the heat capacity can be reduced. When a heater combining a plurality of pillars is used, the length of the pillars is 10 mm.
0 mm or less is desirable. This is because temperature control is easy.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, description will be made in accordance with embodiments. Embodiments of the heater of the present invention can be roughly classified into the following two. (A) A heater composed of a substrate formed by combining a plurality of segments having a heating function made of ceramic or metal (hereinafter also referred to as a divided substrate type heater) In this heater, any one surface of a substrate or its inside is provided. A heating element is provided, and the heating element is independently provided in each of a plurality of segments constituting the substrate.

(B) A heater composed of a plurality of segments having a plurality of heating functions made of ceramic or metal pillars (hereinafter, also referred to as a pillar assembly heater) In this heater, a heating element is provided on the surface or inside. A plurality of columnar segments are provided to constitute a heater.

First, the divided substrate type heater (A) will be described. According to the knowledge of the inventors, when one ceramic substrate is used as a substrate for a heater, the heating element is provided separately from whether the heating element is provided on one surface or inside the substrate. It has been found that when energization / interruption to the substrate is repeated, particularly when energization / interruption is repeated in a short time, the ceramic substrate is often damaged.

The cause of the damage of the ceramic substrate is caused by the thermal load (thermal stress) applied to the ceramic substrate due to the repetition of the energization / interruption to the heating element described above. This thermal load (thermal stress) increases as the size of the substrate increases, and the time of repetition of heating and cooling decreases, and increases as the number of repetitions increases.

When one metal substrate is used, the metal has a lower Young's modulus than the ceramic and is easily deformed. For this reason, the object to be heated is deformed by its own weight, and the distance from the object to be heated becomes larger toward the center, and the object to be heated cannot be heated uniformly. For this reason, it is necessary to increase the thickness of the metal substrate, and as a result, the rate of temperature rise and fall is reduced.

In order to reduce the above-mentioned uneven heat load (thermal stress) applied to a ceramic substrate or the like, the present invention proposes the above-mentioned divided substrate type heater in which a plurality of segments are combined into a substrate. FIGS. 1A and 1B are perspective views schematically showing a heater according to the present invention. The heater of the present invention
Like the conventional ceramic heater 80 shown in FIG. 12, the ceramic heater 80 is not constituted by the ceramic substrate 80 having one integral resistance heating element 82 regardless of its size. FIG.
As shown in (a), the substrate 1 constituting the heater is composed of four fan-shaped segments (sectors) 1a, 1b, 1c, 1
d and these segments 1a, 1b, 1c,
By combining 1d, a disk-shaped substrate as a whole is obtained.

For example, as shown in FIG.
By combining the small disk-shaped central portion 5e and the annular portions 5a to 5d provided so as to surround the outer periphery thereof, the disk-shaped substrate may be formed as a whole.

In FIGS. 1 (a) and 1 (b), the substrate 1 is a heater formed by combining four or five segments. However, the number is not particularly limited.
The substrate 1 may be composed of an arbitrary number n of segments 1a, 1b, 1c... 1n.
b, 5c... 5n may be composed of an arbitrary number n of segments. Also, the shape is not particularly limited, and may be a certain shape (for example, a disk shape) by combining the segments. The shape of the substrate formed by the combination of the segments is preferably a disk shape in order to uniformly heat the semiconductor wafer and the like.

As described above, when a plurality of segments having various shapes are used in combination, the size of each segment itself is small, so that the chance of receiving the above-mentioned uneven heat load is reduced. The probability of breakage of the ceramic substrate is reduced, and the reliability and life of the ceramic heater are improved. In addition, when a metal substrate is used, the area of each segment is reduced and the deflection due to its own weight is reduced, so that the distance to the object to be heated is constant, and uniform heating of the object to be heated can be realized.

As the shape of each segment constituting the divided substrate type heater of the present invention, for example, as shown in FIG. 1A, a disk is divided into four sectors, and a disk is divided into eight sectors. As shown in FIG. 1B, a disk-shaped one (center part 5e), and a wide circular-arc-shaped one (circular part) provided so as to surround the outer circumference of the disk-shaped one 5a to 5d) and the like.

Each of these segments has the structure shown in FIG.
As shown in (a) and (b), resistive heating elements 2a to 2d and 6a to 6e having independent patterns are provided, and the resistance heating elements 2a to 2d and 6a to 6e are shown in FIG.
As shown in (a) and (b), each of the segments (ceramic substrate, metal substrate) 1a to 1d, 5a to 5e is formed on one main surface or buried inside thereof. . Then, these segments are combined so as to form a circular shape as a whole and used as one ceramic heater and one metal heater.

The resistance heating elements 2a to 2d and 6a to 6e
As shown in FIGS. 1 (a) and 1 (b), the pattern may be arc-shaped, concentric, or the like. The resistance heating element 2a
When these are combined, basically, the patterns of 2d and 6a to 6e are preferably symmetrically wired to achieve uniform heating. The resistance heating element may be formed on the heating surface of the substrate to be configured, or may be embedded therein.

In order to combine the above-mentioned respective segments with each other to form a substrate, the boundaries of the respective segments may be adhered with an adhesive, and as shown in FIG. The fixing member 171 and the holding member 170 may be used for fixing, or the fixing member 171 such as a bolt may be directly fixed to the casing 18 of the support container 10.

FIG. 2 shows an example in which the heater according to the present invention is applied to a hot plate unit for a semiconductor manufacturing / inspection apparatus. The heater formed by combining the ceramic segments is attached to a supporting container. It is a longitudinal section showing one embodiment.

The ceramic substrate 1 includes a plurality of segments 1
1n are connected to each other, and are preferably formed in a disc-like shape. On the bottom surface of each segment 1n (ceramic substrate 1), independent resistance heating elements 2a.
2n are formed in a pattern as shown in FIGS. 1 (a) and 1 (b). Preferably, the resistance heating element 2 is formed symmetrically, if possible, in a concentric circuit throughout the heater.

A plurality of through holes 7 for inserting lifter pins used for carrying a silicon wafer or the like are formed in a portion near the center of the ceramic substrate 1 formed by joining the segments 1n. A guide tube 15 is provided directly below the through hole 7 so as to communicate with the through hole 7.
Further, a through hole 12a communicating with the bottom plate 12 is formed in the bottom plate 12 of the supporting container 10.

A bottomed hole 4 for inserting a temperature measuring element 3 such as a thermocouple is formed on the bottom surface side of each segment 1n of the ceramic substrate 1, and the temperature measurement embedded in the bottomed hole 4 is formed. The element 3 is drawn out through a through hole 12 a provided in the bottom plate 12 via a lead wire 19 and is connected to an external power supply. Further, the temperature measuring element does not necessarily have to be in the bottomed hole, and may be in close contact with or adhered to the bottom surface of each segment.

As described above, if the temperature measuring element 3 is attached to each of the segments 1a to 1n and the temperature is controlled for each of the segments 1a to 1n, the entire ceramic heater substrate 1 and the entire ceramic heater can be controlled. Temperature control for uniform heating can be finely performed.
As a result, a non-uniform temperature distribution does not occur in the entire substrate.

The ceramic substrate 1 composed of each of the segments 1a... 1n is mainly fitted into the upper inside of a substantially cylindrical casing 18 constituting the supporting container 10 via a heat insulating ring 17 attached to the outer periphery. It is fixed to the support container 10 by a fastener 171 and a holding metal 170 such as a washer. In addition, this support container 1
An intermediate bottom plate 11 is mounted in the middle of the casing 18 constituting the casing 0, and a bottom plate 12 is fixed below the intermediate bottom plate 11. The midsole plate 11 and the bottom plate 12 are not essential, and are provided as necessary.
Either one of the inner bottom plate 11 and the bottom plate 12 may be provided, or both may be provided.

The hot plate unit 10 shown in FIG.
In the example of No. 0, the ceramic substrate 1 is fitted inside the top of the casing 18 forming the supporting container 10 via the heat insulating ring 17, but the ceramic substrate 1 is placed on the casing forming the supporting container, It may be fixed to the top of the support container via a heat insulating member using a fastening tool such as a bolt.

In the hot plate unit 100, an external terminal 13 is connected to an end 2z of the resistance heating element 2 provided in each of the segments 1a... 1n. The lead wire 19 is drawn out of the bottom plate 12 through a through-hole and is connected to a power source (not shown).

Further, a refrigerant introduction pipe 16 is attached to the bottom plate 12 so that cooling air or the like can be introduced into the inside of the support container 10. In addition, a through hole is formed in the middle bottom plate 11 so as not to obstruct the guide tube 15 and the refrigerant introduction tube 16 fixed to the bottom plate 12.

Although not shown, the ceramic substrate 1
A silicon wafer is placed thereon, and this silicon wafer is supported at a predetermined distance from the upper surface of the ceramic substrate 1 by using lifter pins or the like inserted through the through-holes 7 to perform processing such as heating. Will be The silicon wafer is supported at a predetermined distance from the upper surface of the ceramic substrate 1 by a support pin provided in a concave portion or a through hole formed on the heating surface of the ceramic substrate, and is subjected to processing such as heating. You may.

Regarding the structure of the support container 10, the middle bottom plate 11 and / or the bottom plate 12 are attached to the middle or lower end of the cylindrical casing 18 serving as the outer frame as described above. The midsole plate 11 reflects heat radiated from the resistance heating element 2 below the ceramic substrate 1 to improve the heat retaining effect of the ceramic substrate 1, and to provide wiring, external devices, and the like provided below the ceramic substrate 1. Is provided for the purpose of protecting the device from heat, that is, so-called heat shielding.

The midsole plate 11 is provided with a casing 17.
It is effective to provide a space for circulating the refrigerant at the time of cooling after the temperature rise, in addition to keeping the temperature of the ceramic substrate 1 high, and to improve the efficiency of keeping and cooling the ceramic substrate 11. is there. In addition, wiring can be fixed to the midsole plate 11.

In the above-mentioned middle bottom plate 11, the surface on the ceramic substrate side is mirror-finished with diamond abrasive grains.
Alternatively, it is desirable to perform polishing or the like using a diamond grindstone of # 50 to # 800 so that the surface roughness according to JIS B 0601 becomes Ra = 20 μm or less.

Further, the middle bottom plate 11 and the bottom plate 12 are
It is not always necessary to fix to the casing 18 of the support container 10. For example, the middle bottom plate 11 may be pressed and supported by a plate spring (not shown) provided on the bottom plate 12. in this way,
By using the above-mentioned leaf spring, it becomes possible to support the midsole plate 11 without contact with the casing 18 of the support container 10, and the support container 10 may be distorted due to thermal expansion or contraction of the midsole plate 11. Disappears.

It is desirable that the heater of the present invention has a position adjusting mechanism for adjusting the position of each segment in the vertical direction (vertical direction). FIG. 3 is a cross-sectional view schematically showing a hot plate unit having such a position adjusting mechanism.
Except for the parts described below, the configuration is the same as that of the hot plate unit 100 shown in FIG.

As shown in FIG. 6A, a threaded groove 12b is provided in the bottom plate 12, and a screw 180 is formed in the hole 12b.
The screw 180 can be moved up and down by rotating the screw 180, and the upper end of the screw 180 is in contact with the substrate 1 (each segment 1a... 1n).

Therefore, as shown in FIG.
Can be adjusted to adjust the vertical position of each segment 1a... 1n. By adjusting this position, the distance between the object to be heated such as a silicon wafer and the substrate 1 is adjusted to be constant. Can be. Although not shown, an elastic body is interposed between the fastener 171 and the heat insulating ring 17 and the substrate 1 so that each segment 1a... Has become. The vertical position of each segment 1a... 1n may be on the same plane, and is 5 to 3000 μm in the vertical direction.
May be present. 300 vertical displacement
If the thickness exceeds 0 μm, uniform heating of the object to be heated may be hindered.

A concave portion 101a is formed in the heating surface of the substrate 1, and a support pin 8 is set in the concave portion 101a with its tip slightly protruding from the heating surface of the substrate 1.
The silicon wafer 9 is supported by the support pins 8 while being separated from the substrate 1.

By heating the silicon wafer 9 in such a form, it is easier to uniformly heat the silicon wafer 9 than directly mounting the silicon wafer on the substrate 1 and to prevent diffusion of impurities of ceramics and metals. I can do it. The separation distance is desirably 5 to 5000 μm. If the separation distance is less than 5 μm, the temperature distribution on the heated surface is reflected on the object to be heated, while if it exceeds 5000 μm, sufficient heating cannot be performed. The silicon wafer 9 is
It may be supported by the above-described lifter pins. In this case, the silicon wafer 9 and each segment 1a.
The distance to n can be adjusted more freely.

Examples of the material of the segments constituting the ceramic substrate include a nitride ceramic, a carbide ceramic, an oxide ceramic and the like. Examples of the nitride ceramic include, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride, and the like.

Examples of the above-mentioned carbide ceramic include, for example, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, tungsten carbide and the like. Examples of the above oxide ceramic include, for example, alumina, zirconia, cordierite, mullite and the like. These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Also, among nitride ceramics, aluminum nitride is most preferred. This is because the thermal conductivity is the highest at 180 W / m · K.

In the present invention, the resistance heating element formed on one of the surfaces of the segments constituting the ceramic substrate or inside thereof is made of a noble metal (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel or the like. , Or a conductive ceramic such as a carbide of tungsten or molybdenum. The reason is that it is possible to increase the resistance value,
This is because the thickness itself can be increased for the purpose of preventing disconnection and the like, and it is difficult to be oxidized and the thermal conductivity is not easily reduced. These may be used alone or in combination of two or more. The resistance heating element is formed on the side of the ceramic substrate opposite to the surface on which the object to be heated is heated.

Since the resistance heating elements provided for each segment need to make the temperature of the entire ceramic substrate uniform, a concentric pattern or a combination of a concentric pattern and a bent line pattern is used. Such is preferred. The thickness of the resistance heating element is desirably 1 to 50 μm, and the width thereof is desirably 5 to 20 mm. The resistance value can be changed by changing the thickness or width of the resistance heating element, but this range is the most practical. The resistance value of the resistance heating element becomes thinner and becomes larger as it becomes thinner. When the resistance heating element is provided inside, the distance between the heating surface and the resistance heating element is shortened, and the uniformity of the surface temperature is reduced. Therefore, it is necessary to increase the width of the resistance heating element itself.

The cross section of this resistance heating element is square, elliptical,
The shape may be either a spindle shape or a kamaboko shape, but is preferably a flat shape. This is because the flat surface is easier to radiate heat toward the heating surface, so that the amount of heat propagation to the heating surface can be increased, and the temperature distribution on the heating surface is hardly obtained. In addition,
The resistance heating element may have a spiral shape.

In order to form a resistance heating element on the surface or inside of the ceramic substrate, it is preferable to use a conductive paste made of metal or conductive ceramic. That is, when the resistance heating element is formed on the surface of the ceramic substrate, the resistance heating element is usually formed by baking the ceramic substrate, forming the conductor paste layer on the surface thereof, and firing. To form

When a resistance heating element is formed inside a ceramic substrate, the above-mentioned conductive paste layer is formed on a green sheet, and then the green sheet is laminated and fired to form a resistance heating element inside. The conductive paste is not particularly limited, but preferably contains not only metal particles or conductive ceramic particles for ensuring conductivity, but also a resin, a solvent, a thickener, and the like.

Examples of the material for the metal particles and the conductive ceramic particles include those described above. The particle size of these metal particles or conductive ceramic particles is 0.1 to 10
0 μm is preferred. If it is too fine, less than 0.1 μm, it is liable to be oxidized, while if it exceeds 100 μm, sintering becomes difficult and the resistance value becomes large.

Even if the shape of the metal particles is spherical,
It may be scaly. When these metal particles are used, they may be a mixture of the above-mentioned spheres and the above-mentioned flakes. When the metal particles are scaly or a mixture of spherical and scaly, the metal oxide between the metal particles is easily retained, and the adhesion between the resistance heating element and the ceramic substrate is ensured. And the resistance value can be increased.

Examples of the resin used for the conductor paste include epoxy resin and phenol resin. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

When a conductor paste for a resistance heating element is formed on the surface of a ceramic substrate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable that they are tied. As described above, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be more closely adhered.

Although it is not clear why mixing the above metal oxide improves the adhesion to the ceramic substrate, the surface of the metal substrate or the surface of the ceramic substrate made of non-oxide has a slight surface. It is considered that the oxide film is oxidized to form an oxide film, and the oxide films are sintered and integrated via the metal oxide, so that the metal particles and the ceramic adhere to each other. Further, when the ceramic constituting the ceramic substrate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

As the metal oxide, for example, oxidized
Lead, zinc oxide, silica, boron oxide (B _Two O_Three ), Al
Selected from the group consisting of Mina, Yttria and Titania
At least one is preferred. These oxides have resistance
Metal particles and ceramics can be used without increasing the resistance of the heating element.
This is because the adhesion to the substrate can be improved.
You.

The ratio of the above-mentioned lead oxide, zinc oxide, silica, boron oxide (B ₂ O ₃ ), alumina, yttria, and titania is as follows: 1-10, silica 1-30, boron oxide 5-50, zinc oxide 20-70, alumina 1
-10, yttria 1-50, titania 1-50, and the total is preferably adjusted so as not to exceed 100 parts by weight. By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic substrate can be particularly improved.

In the split substrate type heater of the present invention, a metal substrate can be used in place of the ceramic substrate. As the metal substrate, stainless steel, aluminum, iron, copper, Kovar, or the like can be used.

FIG. 4 is a sectional view schematically showing a hot plate unit using a metal substrate. In the hot plate unit 300, as shown in FIG. 5, the resistance heating element 52 is sandwiched between silicon rubbers 53 to form a rubber heater. The rubber heater is fixed to one surface of the metal plate 51 with bolts or an adhesive. The other components are substantially the same as those of the heater shown in FIG. That is, the substrate 51 is fitted into the upper inside of the cylindrical casing 18 of the support container 10 via the heat insulating ring 17, and is fixed to the support container 10 by a fastener 171 such as a bolt and a holding metal 170 such as a washer. I have.

Next, the columnar assembly type heater (B) will be described. In this heater, as described above, a column made of ceramic or metal is used as a segment having a heating function, and a plurality of columnar segments having a heating element are arranged on the surface or inside thereof to constitute a heater. I have.

First, the columnar segments will be described. FIG. 5A is a perspective view schematically showing a columnar segment, and FIG. 5B is a sectional view taken along line AA.
As shown in FIG. 5, in the columnar segment 20, a resistance heating element 22 and a terminal 24
Is formed, and the core material 2 on which the resistance heating element 22 and the like are formed.
1 is covered with an insulating layer 23.

As shown in (b), near the end, a terminal 24 electrically connected to the resistance heating element 22 is exposed to form a connection part 25. An adhesive layer 26 is formed on the material 21, and its height is substantially the same as the outer periphery of the insulating layer 26, so that connection with external terminals can be easily performed.

The connection portion 25 is plated with nickel and gold to ensure oxidation resistance. Further, it is desirable that the temperature difference between the distal end portion 27 of the columnar segment and the connecting portion 25 during heating is 20 ° C. or more. This is because low-temperature melting solder or brazing material can be used in the connection portion, and thermal damage to the socket plate is small.

FIG. 6A is a cross-sectional view schematically showing one step in manufacturing the columnar segment 20 having such a configuration, and FIG. 6B is a plan view thereof. In this case, the ceramic green sheet 23a which becomes an insulating layer by firing is used.
And conductive pastes 22a and 24a to be the resistance heating element 22 and the terminals 24, and a green sheet 26a to be the adhesive layer
Are printed so as to form a laminated body in a laminated state as shown in FIG.

The above-mentioned laminate is, for example, a film sheet 2
8, a green sheet 26a, a conductive paste 22a,
After printing the 4a and the ceramic green sheet 23a, the sheet is turned upside down, placed on the table 27, and the film sheet 28 is peeled off, so that it can be easily manufactured. Thereafter, the laminated body is wound around a molded body serving as a core material and fired, whereby the columnar segment 20 can be manufactured.

In the columnar segment shown in FIG. 6, a resistance heating element is formed inside, but a resistance heating element may be formed on the surface of the columnar body. In this case, it is desirable that a metal coating layer is formed on the resistance heating element and protected.

The columnar segment used in the present invention is made of ceramic or metal having a heating element formed inside or on its surface. Examples of the ceramic include a nitride ceramic, a carbide ceramic, and an oxide ceramic.

Examples of the nitride ceramic include aluminum nitride, silicon nitride, boron nitride, titanium nitride and the like. Examples of the carbide ceramic include, for example, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, tungsten carbide, and the like. Examples of the above oxide ceramic include, for example, alumina, zirconia, cordierite, mullite and the like. These ceramics may be used alone or in combination of two or more.

Examples of the metal include stainless steel, aluminum, iron, copper, and Kovar. When a metal is used, it is desirable to wind the heating wire around a metal column through an insulator.

FIG. 7 is a cross-sectional view schematically showing a hot plate unit using such columnar segments, and FIG. 8 is a plan view of the hot plate unit shown in FIG. In this hot plate unit 400, a socket plate 31 having a socket 34 whose lead wire is connected to a power source is provided at the bottom of a cylindrical support container 30 having a bottom.
Is arranged, and the columnar segment 20 is fitted into the socket 34 via the connecting portion 25, and stands upright.

The tip of the columnar segment 20 is directed substantially in the direction of the object to be heated such as the silicon wafer 9 and is provided substantially vertically. Also, the lifter pins 33 are provided with through holes 31 a formed in the support container 30 and the socket plate 31.
32a is inserted to support an object to be heated such as the silicon wafer 9. The lifter pins 21 may be used to transfer a semiconductor product such as the silicon wafer 9 to a carrier (not shown). A temperature measuring element (for example, a thermocouple) 32 for temperature control is arranged between the segments, and the temperature measuring element 32 is arranged as necessary.

As shown in FIG. 8, in this hot plate unit 400, about 200 columnar segments 20 having a heat-generating function are arranged in a plane in a circular region, and the supporting container portion has , Through holes 31a, 32a
In addition, a coolant supply port 35 for cooling is provided so that a coolant such as cooling air can be introduced into the support container 30.

The columnar segment 2 having a heat generating function
0, six areas _{(A 1 ~A 4, B,} C) is controlled is divided into. This is because the silicon wafer can be more uniformly heated by the division control. For example, usually, easily cools toward the outer periphery of the silicon wafer, the temperature tends to decrease, by setting to a higher temperature of the area A ₁ to A _4, it is possible to achieve a more uniform heating and the silicon wafer .

FIG. 9 is a cross-sectional view schematically showing another embodiment of the hot plate unit using the columnar segments having the above configuration. This hot plate unit 500 has the same configuration as the hot plate unit 400 shown in FIGS. 7 and 8 except for the parts described below.

In this hot plate unit 500,
A plate 46 is provided between the aggregate of the columnar segments 20 and the object to be heated such as the silicon wafer 9 for thermal diffusion. Thus, by inserting the plate-like body 46,
The uniformity of the temperature of the object to be heated is further improved by the effect of thermal diffusion.

Further, the temperature measuring element 42 is disposed on the plate-like body 46, and a support pin 47 is provided. Further, in the hot plate unit 500, an annular notch is provided inside the upper surface of the support container 40, and a convex body 40a is provided on the bottom surface of the notch, and a plate is provided on the convex body 40a. The body 46 is placed in point contact. Support container 40
Is fixed by using bolts or the like, the plate-like body 46 reflects the distortion of the support container 40, and uniform heating becomes difficult due to the difference in the distance between the silicon wafer 9 and the plate-like body 46.

FIG. 10 is a plan view showing still another embodiment of a hot plate unit using a columnar assembly type heater. In this hot plate unit 600, as shown in FIG. 10, the columnar segments 20 are radially placed in two rows on the upper surface of a substantially disk-shaped support container 60, and the body 29 of the columnar segment 20 (see FIG. 5). ) Is substantially parallel to the object to be heated such as a silicon wafer or a plate-like body disposed above the columnar segments 20. The support container 60 has a through hole 6 for inserting a lifter pin.
1 is formed, and an object to be heated such as a silicon wafer is supported by inserting a lifter pin into the through hole 61.

If the resistance heating element is formed over a wide range of the body portion 29 of the columnar segment 20, the object to be heated can be uniformly heated even in such a hot plate unit.

In the hot plate unit, as shown in the sectional view of FIG. 11, the upper surface of the support container 70 may be inclined to form a mortar shape, and the columnar segments 20 may be placed radially on this portion. .

In the hot plate unit 700 having such a configuration, since the periphery of the silicon wafer 9 is closer to the columnar segment 20, it is possible to prevent the temperature of the outer peripheral portion of the silicon wafer 9 from lowering, and to provide a heater having a high temperature uniformity. Can be realized.

In the hot plate unit shown in FIGS. 7 to 11, it is preferable that each of the plurality of columnar segments has a position adjusting mechanism for adjusting the position in the vertical direction. This is because the distance between the segment and the object to be heated or the heat diffusion plate can be adjusted.

Further, in the columnar assembly type heater according to the present invention, the temperature measuring element may be provided inside the columnar segments, or may be disposed between the columnar segments. When the temperature measuring element is provided inside the columnar segment, it is advantageous because the columnar segment functions as a protective tube. Also,
When the temperature measuring element is arranged between the columnar segments, the temperature of the object to be heated can be measured more accurately. In addition, when a plate-like body is disposed as a heat diffusion plate between the columnar segment and the object to be heated, it is desirable that a temperature measuring element is disposed on the surface or inside thereof. This is because the temperature of the object to be heated can be accurately measured. In the columnar-body-assembled heater, it is preferable that the columnar segments are arranged not only in a region where the object to be heated is present but also in a region outside the region. This is because it is possible to prevent the outer periphery of the object to be cooled from generating a temperature distribution.

[0091]

The present invention will be described in more detail with reference to the following examples.

(Example 1) A hot plate unit using a divided substrate type heater having a resistance heating element on the surface (FIG. 1)
(A), see FIG. 3) (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttrium oxide (Y ₂ O)
₃ : A composition comprising 4 parts by weight of yttria, an average particle diameter of 0.4 μm), 12 parts by weight of an acrylic binder and alcohol was spray-dried to prepare a granular powder.

(2) The granular powder is placed in a mold and pressed to form a disc-shaped green form (green).
I got (3) Temperature of the formed body after processing is 1800
℃, pressure: hot press at 20MPa, thickness 3mm
Of aluminum nitride was obtained. By cutting this disc-shaped body, segments 1a... 1d each having a shape obtained by dividing the disc shown in FIG. The assembly formed by combining the segments 1a to 1d is a disk having a radius of 210 mm and a thickness of 3 mm.

Next, drilling is performed on the segments 1a to 1d to form a through hole 7 for inserting a lifter pin of a silicon wafer, and a bottomed hole 4 for embedding a temperature measuring element (thermocouple) 3 (diameter: 1. (1 mm, depth: 2 mm), and a concave portion into which the support pin was fitted was formed. Then, support pins for separating the heating surface of the silicon wafer and the heating surface of the ceramic substrate 1 were fitted into the recesses on the surface.

(4) Each segment 1a obtained in (3) above
... A conductor paste was printed on the bottom surface of 1d by screen printing. The printing pattern was concentric as shown in FIG. As the conductor paste, Solvest PS603D manufactured by Tokuri Chemical Laboratory, which is used for forming through holes in a printed wiring board, was used. This conductor paste is a silver paste, and based on 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight),
It contained 7.5 parts by weight of a metal oxide consisting of silica (10% by weight), boron oxide (25% by weight) and alumina (5% by weight). The silver particles had an average particle size of 4.5 μm and were scaly.

(5) Each of the segments 1a... 1d on which the conductor paste is printed is heated and fired at 780 ° C. to sinter silver and the like in the conductor paste.
Were baked on the bottom surface of the substrate to form resistance heating elements 2a... 2d.
The silver-lead resistance heating elements 2a... 2d have a thickness of 5 μm.
m, the width was 2.4 mm, and the sheet resistivity was 7.7 mΩ / □.

(6) Next, nickel sulfate 80 g / 1, sodium hypophosphite 24 g / 1, sodium acetate 12 g
/ 1, boric acid 8 g / 1, and ammonium chloride 6 g / 1 in an electroless nickel plating bath composed of an aqueous solution having a concentration of 1 g.
A coating layer (not shown) of metallic nickel having a thickness of 1 μm was deposited on the surface of the lead resistance heating element 2.

(7) A silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the portion where the external terminals 12 were to be mounted, to form a solder paste layer. Next, an external terminal 1 made of Kovar is placed on the solder paste layer.
2 and heat reflow at 420 ° C.
3 was attached to the ends of the resistance heating elements 2a to 2d via a solder layer.

(8) A temperature measuring element (thermocouple) 3 for temperature control is inserted into the bottomed hole 4 and filled with a polyimide resin.
Cured at 190 ° C. for 2 hours.

(9) Four hot segments 1a... 1d having resistance heating elements 2a... 2d were attached to the supporting container 10 as shown in FIG. That is, the support container 10 is prepared,
A ceramic substrate 1 composed of four fan-shaped segments 1a... 1d was fitted and mounted inside the top of a casing 18 via a heat insulating ring 17 (see FIG. 3). In this support container (casing), as shown in FIG. 3, a hole 12b provided with a thread in the bottom plate 12 constituting the casing 18 is provided.
The screw 180 is fitted into the hole 12b, and the screw 180 is rotated, whereby the ceramic segments 1a... 1d can be aligned.

Example 2 A hot plate unit using a divided substrate type heater having a resistance heating element inside (1) 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Corporation, average particle size: 1.1 μm), yttrium oxide (Y
₂ O ₃ : yttria, average particle diameter: 0.4 μm) 4 parts by weight, 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and a paste obtained by mixing 53 parts by weight of alcohol composed of 1-butanol and ethanol Was formed by a doctor blade method to produce a green sheet having a thickness of 0.47 mm.

(2) Next, the green sheet is heated to 80 ° C.
After drying for 5 hours, a portion to be a through hole and the like were formed by punching. (3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μm, 3.0 parts by weight of an acrylic binder, α-
A conductor paste A was prepared by mixing 3.5 parts by weight of a terpineol solvent and 0.3 parts by weight of a dispersant. A conductive paste B was prepared by mixing 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, 3.7 parts by weight of an α-terpineol solvent, and 0.2 parts by weight of a dispersant.

This conductor paste A was printed on a green sheet by screen printing to form a conductor paste layer for a resistance heating element. The print pattern was a five-divided pattern as shown in FIG. Conductor paste layer width 10m
m, and its thickness was 12 μm. In addition, a conductive paste B was filled into the portion to be a through hole to form a filling layer. On the green sheet after the above treatment, 37 green sheets 50 on which the tungsten paste was not printed were laminated on the upper side (heating surface) and 13 on the lower side at a pressure of 130 ° C. and 8 MPa.

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and at 1890 ° C. under a pressure of 15 M
Hot pressing was performed at Pa for 10 hours to obtain a 3 mm-thick aluminum nitride sintered body. This was cut out into a 230 mm disk shape to obtain a ceramic substrate having a 6 mm thick, 10 mm wide (aspect ratio: 1666) resistance heating element and through holes inside. Further, the ceramic substrate was cut and divided into segments.

(5) Next, in the segment obtained in (4), a through hole for inserting a lifter pin and a bottomed hole for embedding a thermocouple on the surface were formed by drilling. (6) Further, a blind hole having a diameter of 3.0 mm and a depth of 0.5 mm was formed by drilling a portion directly below the through hole to expose the through hole. Then, N
Using a gold solder made of i-Au, heating and reflow were performed at 1030 ° C., and an external terminal made of Kovar was connected.

(7) A plurality of thermocouples for temperature control were embedded in the bottomed holes, filled with a polyimide resin, and cured at 190 ° C. for 2 hours. (8) Next, a support container was prepared, and a substrate made of a ceramic segment having a resistance heating element was fitted into the support container 10 shown in FIG.

(9) Polishing of the Middle Bottom Plate The surface of the 1.5 mm-thick alumina middle bottom plate attached to the support container 10 on the ceramic substrate side was loaded with 1 μm / cm ² of SiC abrasive grains having a particle size of 10 μm. Polish with J
The surface roughness based on IS B0601 is Ra = 10 μm,
Rmax was set to 100 μm. Next, similarly to the hot plate unit 200 shown in FIG. 3, the inner bottom plate 11 is attached to the casing 18, and the external terminals 13 are pulled out from the through holes formed in the inner bottom plate 11, and the lead wires 19 are formed.
The external terminal 13 and the lead wire 19 were connected by inserting the socket 14 connected to the external terminal 13 into the external terminal 13. (10) Thereafter, the bottom plate 12 having other jigs was attached to the support container 10 provided with the screws 180 for position adjustment as shown in FIG. 3, and the production of the hot plate was completed.

Example 3 A hot plate unit using a metal heater (see FIG. 4) (1) A hot plate unit having a diameter of 23 so that
Cut an aluminum plate of 0 mm and thickness of 5 mm into a fan shape,
A metal segment substrate was used. (2) Between silicon rubber of 1 mm in thickness, 20 μm in thickness
m of stainless steel foil to form a rubber heater,
This was fixed to the segment substrate with bolts.

(3) Lead wires 54
And the lead wire 54 was connected to the socket 14. (4) Further, the segment substrate was fitted and fixed in the support container (casing) 10 having the position adjusting screw 180 shown in FIG.

Example 4 Hot plate unit using columnar segments (see FIG. 6) (1) 94 parts by weight of alumina, 4 parts by weight of SiO ₂ , MgO
0.5 parts by weight, a powder composed of 1.5 parts by weight of CaO and 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant, and an alcohol 5 composed of 1-butanol and ethanol
The paste mixed with 3 parts by weight was formed by a doctor blade method to form an adhesive layer 26a made of a 0.2 mm thick green sheet on the film sheet 28 as shown in FIG.

(2) 100 parts by weight of tungsten particles having an average particle diameter of 3 μm, 1.9 parts by weight of an acrylic binder, α
3.7 parts by weight of terpineol solvent and 0.2 dispersant
The conductive paste was prepared by mixing parts by weight. (3) Next, using this conductive paste, the conductive paste layers 22a and 24a are printed so as to partially overlap the adhesive layer 26a, and a green sheet layer 23a is further formed thereon in the same manner as in (1). To form the laminate shown in FIG.
After being turned over and placed on the table 27, the film sheet 28
Was peeled off.

(4) 92.5 parts by weight of alumina having a diameter of 3 mm and a length of 70 mm, 5.8 parts by weight of a sintering aid SiO ₂ ,
0.5 parts by weight of MgO, 1.2 parts by weight of CaO, 11.5 parts by weight of an acrylic binder, 0.5 parts by weight of a dispersant and 1-
5 parts by weight of alcohol consisting of butanol and ethanol are kneaded, extruded and dried to form a core material.
To obtain a columnar segment 20 shown in FIG. 5 having a diameter of 3 mm and a length of 50 mm.

(5) Next, an aqueous solution having a concentration of 80 g / 1 of nickel sulfate, 24 g / 1 of sodium hypophosphite, 12 g / 1 of sodium acetate, 8 g / 1 of boric acid, and 6 g / 1 of ammonium chloride was applied to the exposed terminals. To form a nickel plating layer, and further immersion in a gold cyanide plating bath to form a gold plating layer on the surface of the nickel plating layer.

(6) The 200 columnar segments 20 thus manufactured were fitted into the socket plate 41 constituting the hot plate unit 400 shown in FIG. As shown in FIG. 8, the area of the socket plate 31 is divided into six areas of outer circumferences A _{1 to} A ₄ , B, and C, and the same voltage is applied to the segments in each area to perform the same control. (7) The socket plate 41 is fitted into the support container 40 having the coolant supply port 45, and the projection 4
The temperature measuring element (thermocouple) 42 is sealed with a ceramic (Alon ceramic, manufactured by Toa Gosei Co., Ltd.) through a thickness of 3 m through the thickness 0 m.
m of aluminum nitride substrate was mounted thereon to complete the heater.

(Example 5) As a columnar segment, a stainless steel rod having a diameter of 3 mm and a length of 50 mm wound with a nichrome wire through a silicon rubber was used.
A hot plate unit was constructed in the same manner as in Example 4.

(Example 6) After manufacturing a columnar segment 20 in the same manner as (1) to (5) of Example 4, as shown in FIG. They were arranged in a row (chrysanthemum flower shape), and the body 29 was directed toward the object to be heated.

(Example 7) Hot plate made of SiC (1) Silicon carbide powder (DIATHIC G manufactured by Yakushima Denko)
C-15 average particle diameter 1.1 μm) 100 parts by weight, carbon 4 parts by weight, acrylic resin binder 12 parts by weight, B
_A composition comprising 5 parts by weight of ₄ C, 0.5 parts by weight of a dispersant, 1-butanol, ethanol and alcohol was spray-dried to prepare a granular powder.

(2) Next, this granular powder was put into a mold and molded into a flat plate to obtain a formed product. (3) Temperature of the formed body after processing is 1900
℃, pressure: hot press at 20MPa, thickness 3mm
Of the silicon carbide sintered body was obtained.

(4) Next, the plate-like body was placed in a nitrogen gas
Annealing treatment was performed at 1600 ° C. for 3 hours, and thereafter, a disk having a diameter of 210 mm was cut out from the plate to obtain a ceramic plate.

Further, a glass paste (Shoei Kagaku Kogyo G-5270) was applied to the surface of the plate-like body.
Heated at 00 ° C. to melt and form 2 μm thick SiO 2 on the surface
_Two layers were formed. Next, this plate-shaped body is subjected to drilling and machining with a cutting member to form a through hole for inserting a lifter pin, a through hole for inserting a lifter pin for supporting a silicon wafer, and a bottomed hole (diameter) for embedding a thermocouple. : 1.
1 mm, depth: 2 mm). Furthermore, cutting processing was performed, and it divided | segmented into five segments as shown in FIG.1 (b).

(5) On the bottom surface of the plate obtained in the above (3),
The conductor paste was printed by screen printing. The printing pattern was a concentric pattern as shown in FIG. As the conductor paste, Solvest PS603D manufactured by Tokuri Chemical Laboratory, which is used for forming through holes in a printed wiring board, was used. This conductor paste
Silver-lead oxide paste, with respect to 100 parts by weight of silver,
Containing 7.5 parts by weight of a metal oxide consisting of lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), boron oxide (25% by weight) and alumina (5% by weight) Met. The silver particles have an average particle size of 4.5 μm.
m, it was scaly.

(6) Next, the sintered body on which the conductor paste was printed was heated and fired at 780 ° C. to obtain silver in the conductor paste,
The lead was sintered and baked on the sintered body to form a resistance heating element. The silver-lead resistance heating element 12 had a thickness of 5 μm, a width of 2.4 mm, and a sheet resistivity of 7.7 mΩ / □ near the terminal portion. (7) Next, the above-mentioned glass paste was further applied to the surface and fired at 600 ° C. to apply a glass coat to the surface.
Thereafter, a hot plate unit was formed in the same manner as in Example 1.

(Embodiment 8) As a columnar segment, a hollow is provided in a core material 121, a temperature measuring element (thermocouple) 128 is disposed in the hollow, and the end of the hollow connecting portion 125 side is made of ceramic (Dongya). A hot plate unit was configured in the same manner as in Example 4, except that a columnar segment (FIG. 13) sealed with Synthetic Aron Ceramic) was used. In addition, the temperature measuring element was not arranged between the columnar segments.

Comparative Example 1 A ceramic heater comprising one ceramic substrate 81 as shown in FIG. 12 was manufactured under the same manufacturing conditions as in Example 1. Thereafter, a hot plate unit was formed in the same manner as in Example 1.

(Comparative Example 2) A hot plate was manufactured in the same manner as in Example 3 except that one metal substrate was used.

The hot plate units according to Examples and Comparative Examples thus obtained were energized to raise the temperature to 500 ° C. in 1 minute, and the hot plate at 500 ° C. was heated to -20 ° C. A cooling test was performed in which air was blown to cool to room temperature in 2 minutes. Further, the silicon wafer is heated to 200 ° C. at a distance of 100 μm from the tip of the substrate segment or the columnar segment, and heated.
The difference between the maximum temperature and the minimum temperature of the silicon wafer was measured with a thermoviewer. The results are shown in Table 1 below.

[0127]

[Table 1]

As shown in Table 1 above, in the heaters according to the examples, no crack occurred in the temperature rise test or the temperature drop test, and the temperature difference was small.
The substrate cracked or the temperature difference increased.

[0129]

As described above, according to the heater used in the manufacture and inspection of semiconductors of the present invention, the substrate may be damaged or the resistance heating may be generated despite the sudden energization / interruption to the resistance heating element. The life of the heater is improved without causing disconnection of the body. Therefore, rapid temperature rise and temperature fall can be realized. Further, since the temperature can be controlled for each segment, the semiconductor wafer can be uniformly heated over the entire substrate, and a semiconductor-related product such as a silicon wafer having good characteristics can be stably manufactured.

[Brief description of the drawings]

FIGS. 1A and 1B are perspective views schematically showing segments constituting a heater of the present invention.

FIG. 2 is a cross-sectional view schematically showing a hot plate unit according to the present invention.

FIG. 3A is a cross-sectional view schematically showing a hot plate unit using the split substrate type heater of the present invention,
(B) is the perspective view which showed the state which moves a segment up and down using a screw.

FIG. 4A is a cross-sectional view schematically showing a hot plate unit using the divided substrate type heater of the present invention,
(B) is the perspective view which showed the state which moves a segment up and down using a screw.

FIG. 5A is a perspective view schematically showing a columnar segment constituting a heater of the present invention, and FIG.
FIG. 4 is a cross-sectional view taken along a line A.

FIG. 6A is a cross-sectional view schematically showing a part of a manufacturing process of a columnar segment constituting the heater of the present invention,
(B) is a plan view thereof.

FIG. 7 is a cross-sectional view schematically showing a hot plate unit using the columnar assembly type heater of the present invention.

FIG. 8 is a plan view of the hot plate unit shown in FIG. 7;

FIG. 9 is a cross-sectional view schematically showing a hot plate unit using the columnar-body-assembled heater of the present invention.

FIG. 10 is a plan view schematically showing a hot plate unit using the columnar assembly type heater of the present invention.

FIG. 11 is a cross-sectional view schematically showing a hot plate unit using the columnar assembly type heater of the present invention.

FIG. 12 is a bottom view schematically showing a ceramic heater using a conventional ceramic substrate.

FIG. 13 is a perspective view schematically showing a columnar segment constituting the heater of the present invention.

[Explanation of symbols]

1, 5, 51 Substrates 1a to 1d, 5a to 5e Segments 2a to 2d, 6a to 6d, 52 Resistance heating element 2z End of resistance heating element 3, 32, 42 Temperature measuring element 4 Bottomed hole 7, 61 Through hole 8 Support Pin 10, 30, 40, 60 Support Container 11 Middle Bottom Plate 12 Bottom Plate 13 External Terminal 14 Socket 17 Heat Insulating Ring 18 Casing 20, 120 Columnar Segment 21, 121 Core Material 22, 122 Resistance Heating Element 23, 123 Insulating Layer 24, 124 Terminal part 25, 125 Connection part 26, 126 Adhesive layer 31, 41 Socket plate 33 Lifter pin 34 Connection part 53 Silicon rubber 100, 200, 300, 400 Hot plate unit 500, 600, 700 Hot plate unit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05B 3/06 H05B 3/18 3/18 3/20 393 3/20 393 3/46 3/46 H01L 21 / 30 567 F-term (reference) 3K034 AA02 AA08 AA10 AA21 AA22 AA34 BB06 BB14 BC04 BC06 BC12 BC17 BC24 BC29 CA02 CA15 CA26 CA35 DA04 DA08 EA07 GA10 GA14 HA01 HA10 JA01 JA02 3K058 AA45 AA86 BA00 CA12 CE23 GA06 3K092 PP20 QA01 QA05 QB02 QB17 QB44 QB45 QB47 QB74 QB76 QC02 QC18 QC38 QC42 QC43 QC44 QC52 RA02 RA09 RB08 RB22 RD03 RD06 RD07 RD08 RD09 RD16 RF03 RF11 RF22 SS05 TT06 V37 TT18 V37 TT18 V04

Claims (23)

[Claims] 1. A heater comprising a plurality of segments having a heating function for heating an object to be heated. 2. The heater according to claim 1, wherein the plurality of segments are arranged in a plane. 3. The heater according to claim 1, wherein each of the plurality of segments has a position adjusting mechanism for adjusting a position in a vertical direction. 4. The heater according to claim 1, wherein the heater is a heater for a semiconductor manufacturing / inspection apparatus for heating a semiconductor product. 5. A heater comprising a heating element provided on one surface of or inside a substrate, wherein the substrate is constituted by combining a plurality of segments, and the plurality of segments include: Heaters characterized in that heating elements are independently formed. 6. The heater according to claim 5, wherein the substrate is made of metal or ceramic. 7. The heater according to claim 5, wherein the heating element is formed on a side opposite to a side that heats the object to be heated. 8. The ceramic substrate has a disk shape and is formed by combining fan-shaped segments or combining a segment forming a central portion and a segment comprising one or more annular portions around the center portion. The heater according to any one of claims 5 to 7, wherein the heater is configured. 9. The heater according to claim 5, further comprising a temperature measuring element for each segment. 10. The heater according to claim 5, wherein the plurality of segments are arranged in a plane. 11. The plurality of segments each include:
The heater according to any one of claims 5 to 10, further comprising a position adjusting mechanism for adjusting the position in the vertical direction. 12. The heater according to claim 5, wherein the heater is a heater for a semiconductor manufacturing / inspection apparatus for heating a semiconductor product. 13. A heater comprising a plurality of columnar segments having a heating element on the surface or inside thereof. 14. The heater according to claim 13, wherein a tip of the columnar segment is disposed so as to face a heated object. 15. The heater according to claim 13, wherein the body of the columnar segment is directed toward the object to be heated. 16. The heater according to claim 13, wherein a plate-like body is provided between the columnar segment and the object to be heated. 17. The heater according to claim 13, wherein each of the plurality of columnar segments has a position adjusting mechanism for adjusting a position in a vertical direction. 18. The heater according to claim 13, wherein the heater is a heater for a semiconductor manufacturing / inspection apparatus for heating a semiconductor product.
The heater according to any one of the above. 19. The heater according to claim 13, wherein a temperature measuring element is formed inside the columnar segment. 20. The heater according to claim 13, wherein a temperature measuring element is arranged between the columnar segments. 21. The heater according to claim 16, wherein a temperature measuring element is disposed on a surface or inside the plate-like body. 22. The heater according to claim 13, wherein a temperature difference between a tip portion of the columnar segment and a connection portion is 20 ° C. or more. 23. The columnar segment is arranged in a region where an object to be heated is present and a region outside the region.
23. The heater according to any one of 3 to 22.