JP2002180243A - Titanium sputtering target and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering target in which generation of dust is effectively prevented. SOLUTION: A crystal plane (101) obtained by X-ray diffraction of at least a part of a non-erosion region of a surface to be sputtered Wherein the half width of the peak is 0.25 to 0.5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a titanium sputtering target and a method for producing the same. More specifically, the present invention relates to a sputtering target in which generation of dust is effectively prevented, and a method for manufacturing the same.

[0002]

2. Description of the Related Art In recent years, the electronic component industry represented by semiconductor elements and liquid crystal display devices has been rapidly progressing.
In semiconductor devices represented by bit DRAM, logic, flash memory, etc., high integration, high reliability,
With the advancement of functions, the precision required for microfabrication techniques for forming electrodes and wirings is also increasing. Accordingly, there is a need to reduce dust in the manufacturing process. In particular, in the sputtering process, 0.2μ
Even fine dust of about m has an adverse effect on the yield of the device, so a sputtering target that does not generate dust is desired.

[0003] In general, an efficient magnetron sputtering method has become the mainstream as industrially performed sputtering. From the principle, an erosion portion and a non-erosion portion exist in a sputtering target material, and a sputtered surface is formed. Edge portions and side portions become non-erosion portions. Particles sputtered from the sputtering target in the sputtering device, those that normally reach the semiconductor substrate, those that fly to the periphery and adhere to the outside of the substrate in the sputtering device, and further return to the sputtering target and return to the sputtering target There is a substance (re-adhesion film) that adheres to the surface. Of the particles adhering to the sputtering target, the particles adhering to the non-erosion area are gradually accumulated in a film because they are not sputtered again. It is said that dusting also causes dust.

FIG. 2 is a view schematically showing a conventional general magnetron sputtering apparatus. The general magnetron sputtering apparatus shown in FIG. 1 includes a sputtering target 10 comprising a sputtering target material 11 and a backing plate 12 for supporting the same.
And the substrate 13 are arranged to face each other, an electric field E is applied between the sputtering target 10 and the substrate 13, and the sputtering target 10 is
The magnetic field M is generated on the surface of the sputtering target 10 by the magnet 14 disposed on the back side of the target. By the action of the magnetic field M and the electric field E,
Electrons cause cyclone motion, high-density plasma is generated in the surface of the sputtering target and in the magnetic field, and erosion is progressing in a region surrounded by the magnetic field M of the sputtering target. On the other hand, a region deviated from the magnetic field M, for example, a region indicated by A in FIG. 2 (that is, a side surface portion, an outer peripheral edge portion, and a center portion) of the sputtering target material 11 is a non-erosion region because it is not sputtered. Sputtered particles adhere to these non-erosion regions and accumulate in layers according to the number of times of the sputtering process. It is said that these adhered particles are peeled off and fall into dust during the sputtering process, particularly at a later stage of the target life of the sputtering target.

[0005]

As a measure for preventing dust generated from a sputtering target by such a mechanism, a method of preventing the adhered particles from falling off by making the surface roughness of the non-erosion part larger than that of the erosion part. (For example, JP-A-6-306597),
Various anti-peeling measures have been adopted, such as one in which blast particles are driven into the non-erosion portion to prevent the adhered particles from being peeled off by an anchor effect (for example, JP-A-9-176843).

[0006] However, although the conventional dust reduction measures have a certain effect, dust tends to increase as sputtering proceeds to near the target life.

SUMMARY OF THE INVENTION The present invention has been made in order to solve such problems, and provides a titanium sputtering target capable of effectively preventing generation of dust from a sputtering target material, and a method for manufacturing the same. Things.

[0008]

Means for Solving the Problems To solve the above-mentioned problems, the inventors studied the surface condition of the non-erosion portion of the titanium (Ti) sputtering target and the form of the adhered film adhered to the target, and found the method of depositing the adhered film. Have found that the surface properties of the underlying Ti sputtering target material are greatly affected. As a result, in order to prevent the generation of dust, it was found that the effect of the specific crystal orientation plane on the surface was large, and the film that adhered to the blasted and etched surface of the underlying surface was dense and sputtered. It has been found that the adhesion strength to the target and the adhesion strength between the films are strong, and the generation of dust due to film peeling can be suppressed.

In the Ti sputtering target of the present invention, the half width of the peak of the crystal plane (101) determined by X-ray diffraction of at least a part of the non-erosion region of the surface to be sputtered is 0.25 to 0.5. It is characterized by the following.

Further, the method of manufacturing a Ti sputtering target according to the present invention is characterized in that at least a part of the non-erosion region on the surface to be sputtered is finished by blasting and then etching.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a Ti sputtering target according to the present invention will be described with reference to the drawings.

FIG. 1 is a sectional view showing the structure of an embodiment of a Ti sputtering target according to the present invention. In FIG. 1, 1 is preferably a high-purity Ti as a film forming material.
, For example, a disk-shaped sputtering target material. Reference numeral 2 denotes a non-erosion region of the sputtering target material 1 described above. Reference numeral 3 denotes a backing plate that supports the sputtering target material 1.
When a sputtering target is used in the general sputtering apparatus shown in FIG.
Are usually located on the side surface, the outer peripheral edge, and the center of the sputtering target material 1.

[0013] The titanium sputtering target of the present invention has a crystal surface (101) obtained by X-ray diffraction of at least a part of a non-erosion region of a surface to be sputtered, wherein a half width of the peak is 0.25 to 0.5. It is.

The surface of the sputtering target is usually subjected to polishing such as lathe processing, rotary polishing and polishing to finish the entire surface of the sputtering surface of the sputtering target. In this case, internal distortion is caused by machining, and the sputtering target is usually used in this state. Due to sputtering, the adhesion of sputtered particles adhered to the non-erosion portion of the sputtering target is greatly affected by the machining state of the target surface, but this can be replaced by the internal strain after processing, especially the crystal Face (1
01) greatly affects the internal distortion. For this reason, in the present invention, the internal strain included in the crystal plane (101) is represented by a half width.

Therefore, in the present invention, the half width of the peak of the crystal plane (101), which is most effective for improving the adhesion of the deposited film adhered to the non-erosion portion of the titanium sputtering target to the sputtering target, is set to 0.1. It was defined as 25 to 0.5.

If the half width of the peak of the crystal plane (101) is less than 0.25, the internal strain of the conventional titanium sputtering target is small and the effect of improving the adhesion of the deposited film cannot be obtained. If it exceeds 5, the internal strain increases and the adhesion of the adhered film decreases, so that the above range is set. The half width of the peak of the preferred crystal face (101) is 0.3 to 0.5.
45, more preferably 0.39 to 0.42.

Further, in the present invention, in addition to the half-value width, the surface roughness of the non-erosion region, Ra: 1 to 3
μm, Ry: preferably 8 to 15 μm.

If the surface roughness is less than the above-mentioned value, a sufficient anchor effect of the adhered film cannot be obtained, and the adhesion of the adhered film is reduced. In this case, a large difference occurs in the amount of adhesion depending on the part, and cracks are liable to occur in the adhered film due to film stress of the adhered film or thermal stress during sputtering. Preferred Ra: 1.2 to 2.5 μm, more preferably 1.5 to 2.3 μm. Also,
Preferred Ry is 10 to 14 μm, more preferably 12 to 13.5 μm.

Further, the sputtering target according to the present invention has at least a part of the non-erosion region of the sputtering target material so that the half-width of the peak of the crystal plane (101) is in the above range and the surface roughness is in the above range. Is finished by performing an etching process after the blasting process.

As described above, by blasting and etching the non-erosion region, the film density of the deposited film is increased, and the adhesion between the deposited film and the sputtering target material and the adhesion between the deposited films are improved. It is possible to suppress dust generation due to film peeling. In the case of only blasting or only etching, the good dust prevention effect aimed at by the present invention cannot be obtained.

Even when only blasting is performed, the effect of preventing the adhesion film from being peeled off by the anchor effect can be seen to some extent, but the same effect as in the present invention cannot be obtained. This is because (a) processing distortion occurs on the processing surface during the blasting process, and as a result, as the spatter is used, the distortion causes peeling of the adhered film. There is a part that becomes extremely large, there is a large difference in the amount of film adhesion between the concave part and the convex part of this part, and due to the change in the adhesion shape, cracks occur due to film stress and thermal stress, and peeling occurs. It is thought to be caused by causing.

In the present invention, the good dust prevention effect was obtained by performing the etching treatment after the blast treatment, thereby removing the processing strain caused by the blast treatment and the extremely large part of the unevenness of the blast treatment surface. It has been speculated that the surface properties of the sputtering target material were adjusted to a shape suitable for preventing the adhesion film from peeling off.

In the present invention, "at least a part" of the non-erosion region only needs to be subjected to blasting and etching, and therefore, the invention is not limited to only the case where all of the non-erosion region has been subjected to blasting and etching. . A preferred embodiment of the present invention also includes a sputtering target material 1 in which only the side surface portion, only the outer peripheral edge portion, and only the central portion are subjected to blasting and etching. In the present invention, "at least a portion" of the non-erosion region is subjected to blasting and etching and if the object of the present invention is achieved, part or all of the erosion is subjected to blasting and etching. Is also good.

Here, the half width of the peak and the surface roughness in the present invention indicate values measured by the following methods.

<Full width at half maximum of peak> For example, a part of a disk-shaped sputtering target is cut out perpendicular to the sputtering surface and cut into a length of 15 mm and a width of 15 mm. Thus, a test piece having a length of 15 mm, a width of 15 mm and a thickness of the target thickness is collected. Then, the surface portion of the target is measured. As shown in FIG. 3, test specimens were taken from four points of a non-erosion part located at the outer peripheral edge of the sputtering target.
The average value of the values obtained by measuring the test piece 10 times or more is calculated. For example, when the target cross-sectional shape is trapezoidal, that is, when the non-erosion portion on the side surface of the target is inclined, the inclined portion may be measured.

For the crystal plane (101), the half width is calculated from the peak obtained by X-ray diffraction. This half width is X
It is the ratio of the width of a half height of a peak obtained by line diffraction to the height of the peak.

The X-ray diffractometer was XRD manufactured by Rigaku Corporation, and the measurement conditions were as follows.

Measurement conditions X-ray: Cu k-α1, 50 KV, 100 mA, vertical goniometer, divergence slit: 1 deg, scattering slit: 1 deg, light receiving slit: 0.15 mm, scanning mode: continuous, scan speed: 1 ° / min, scan step: 0.01 °, scan axis 2θ / θ, measurement angle: 3
8.5 ° to 41.5 ° Peak editing: Half-width value calculated by performing the following editing on the (101) plane peak measured under the above conditions Smoothing method: Weighted average Background removal method: At both ends Tangential straight line Kα2 removal method: intensity ratio (Kα2 / Kα1 = 0.5)

<Surface Roughness> The surface roughness is measured according to JIS B06.
Ra and Ry defined in 01-1994. For example, a disk-shaped sputtering target is partly cut into a test piece having a length of 5 mm, a width of 10 mm, and a thickness of 2 mm. As shown in FIG. 3, the test pieces are sampled from four points of the non-erosion portion located at different edges of the sputtering target, and the average value of the values obtained by measuring these four test pieces ten times or more is calculated. This surface roughness is TAY
Using a surface roughness meter manufactured by LOR HOBSON, conditions Ga
uss / 5 * 0.8mm (cut off) ｛Using a Gaussian filter (JIS B0601), batch measurement at a cutoff value of 0.8 mm, that is, measurement at a cutoff of 0.8 mm and measuring 5 times in total Measure for 4 mm. The surface roughness is measured by｝, which is calculated from the average value of the five measurements.

The test piece for measuring the surface roughness may be different from the sampling position of the test piece for measuring the half width.

The specific contents or conditions of the blasting and the etching can be determined so that the treated surface finally satisfies the half width and the surface roughness defined in the present invention.

The following shows a preferred specific example of the blast processing and the etching processing in the present invention.

<Blasting treatment> In the present invention, the blasting treatment is a treatment for roughening the material surface by colliding the abrasive with the material surface. In the present invention, as an abrasive,
For example, SiC, alumina, silica sand, cast iron, cast steel, etc., preferably SiC and alumina can be used. The most practical method for causing the abrasive to collide with the surface of the sputtering target material is a method using compressed air, but a method using centrifugal force is also possible. Specific processing conditions of the blasting process (for example, the type and particle size of the abrasive, the pressure of compressed air, the nozzle diameter, the distance between the material and the nozzle, the processing time, etc.) depend on the material of the sputtering target material to be processed, It can be appropriately determined in consideration of mechanical properties, manufacturing conditions, distortion generated by blasting, surface roughness, and the like. Excessive blasting causes excessive distortion and unevenness on the surface of the sputtering target material, and satisfies the half-value width defined by the present invention even after the subsequent etching treatment, and furthermore, the surface roughness is satisfied. Should be avoided because it becomes difficult.

In this blast treatment, the blasted surface has a surface roughness of Ra: 2.5 to 3 μm and Ry: 15 to 2
It is preferable that the peak width of the crystal plane (101) by X-ray diffraction is 0.55 or less and the half value width is 0.55 or less.

<Etching process> In the present invention, the etching process is a process in which an object to be processed, especially its surface, is altered by chemical, physical or electrical methods.
This refers to a process for reducing distortion and / or surface roughness of the surface of the processing object. In the present invention, wet etching using a liquid containing a component having a corrosive action on a sputtering target material (hereinafter, referred to as a corrosive component) is preferable, but it can also be performed by physical etching such as sputtering. Examples of corrosive components for performing wet etching include HF, HNO ₃ , and HC.
1, H ₂ O ₂ and mixtures thereof, especially HF, HN
Mixtures of O ₃ are preferred.

The specific processing conditions (eg, the type, mixing ratio, concentration, processing time, temperature, etc. of the corrosive components) of the etching process depend on the material of the sputtering target material to be processed, physical and mechanical properties. It can be determined as appropriate in consideration of, for example, the manufacturing conditions, the strain caused by the blast treatment, and the surface roughness. Excessive etching may reduce the surface roughness too much and reduce the dust prevention effect.

Therefore, this etching process is performed under such conditions that the blasted and etched surface satisfies the half-width and the surface roughness defined in the present invention.

In the present invention, the sputtering target material subjected to the above blasting and etching treatment is made of Ti, preferably made of high-purity Ti. This high-purity Ti contains the same amount of components (impurities) that are inevitably present in the raw material and in the manufacturing process in the same amount as the normal high-purity Ti sputtering target material, similarly to the normal high-purity Ti sputtering target material. Can be contained. Such impurity components include, for example, O, Fe, Ni, Cr, Na,
K, U, Th and the like can be exemplified. In the present invention,
High purity Ti in which the total amount of the above-mentioned impurity components is 250 ppm or less is particularly preferable.

Further, the Ti sputtering target material of the present invention may contain, as desired, various components (arbitrary components) which act advantageously when producing or using the same as the ordinary Ti sputtering target material. It can be contained in the same amount as a normal Ti sputtering target material. Such optional components that can be contained include:
For example, Zr, Hf, V, Nb, Ta, Cr, Mo, W,
Pt, Ir, Ru, Ni, Co, Al, Cu, Si, G
e, a simple substance of a metal element selected from Fe, or an alloy or a compound containing the above-described metal element can be exemplified.

Further, a backing plate 3 for fixing and supporting a sputtering target material can be bonded to the sputtering target according to the present invention, if necessary, similarly to a normal sputtering target. Since the backing plate 3 is required to function as a cooling member for suppressing the temperature rise of the sputtering target material due to ion bombardment (sputtering heat) as well as a supporting member for the sputtering target, the backing plate 3 has a high thermal conductivity. It is preferable to use oxygen copper or an aluminum alloy.

The bonding between the sputtering target material 1 and the backing plate 3 may be performed by brazing or diffusion bonding (solid phase bonding) as in the case of a normal sputtering target, and an appropriate holding jig is used. You can also do it.

The above-mentioned blasting and etching performed in the present invention are generally performed before bonding the backing plate. However, if the effects and objects of the present invention can be achieved, after the backing plate is bonded. You can do it too.

[0043]

Next, specific embodiments of the present invention will be described. <Example 1> Diameter 250mm, thickness 15mm, purity 5N
A masking process was performed so that the non-erosion portion of the Ti sputtering target finished with a lathe was exposed. It was blasted using SiC abrasive grains [blasting conditions = abrasive grains: SiC, air pressure: 2k]
gf / cm ² , nozzle diameter: φ2 mm, and sprayed so that the whole becomes uniform]. This blasted product is subjected to an etching process [HCl: HF: HNO ₃ : H ₂ O = 1: 1: 1: 50
For 10 minutes in the adjusted etching solution] to produce a sputtering target.

<Comparative Example 1 and Comparative Example 2> A sputtering target was manufactured in the same manner as in Example 1 except that the etching treatment was not performed (Comparative Example 1). Further, a sputtering target was manufactured in the same manner as in Example 1 except that the blast treatment was not performed (Comparative Example 2).

Surface Characteristics The Ti sputtering targets obtained in Example 1, Comparative Example 1 and Comparative Example 2 were subjected to X-ray diffraction to calculate the half width of the obtained peaks and to measure the surface roughness. Carried out. Table 1 shows the results.

[0046]

[Table 1]

Dust Measurement Results Using the Ti sputtering targets obtained in Example 1, Comparative Example 1 and Comparative Example 2, a sputtering pressure of 4 × 10
^-1 (Pa), sputtering current 5A, argon flow rate 15s
Under a condition of ccm and a nitrogen flow rate of 30 sccm, a Ti film was formed on a Si wafer having a diameter of 6 inches by magnetron sputtering. 100 lots, 150 lots or 200
The number of dust particles of 0.2 μm or more in the Ti film on the φ6 inch Si wafer after the lot was measured by a particle counter. Table 2 shows the results.

[0048]

[Table 2] As is clear from Table 2 above, the sputtering target of the present invention is superior to the sputtering target of the comparative example in that generation of dust from the initial stage to the latter stage of the sputtering is small.

<Embodiment 2> Diameter 312 mm, thickness 10 m
A masking treatment was performed so as to expose a non-erosion portion of a Ti sputtering target having a purity of 5N and a purity of 5N, which was finished on a lathe. This was subjected to blasting using SiC abrasive grains [blasting conditions = abrasive grains: SiC, air pressure: 2 kgf / cm ² , nozzle diameter: φ2 mm, and sprayed so that the whole becomes uniform]. This blasted product is subjected to an etching treatment [HCl: HF: HNO ₃ : H ₂ O = 1:
Immerse in an etching solution adjusted to 1: 1: 50 for 10 minutes]
To produce a sputtering target.

Comparative Examples 3 and 4 A sputtering target was manufactured in the same manner as in Example 2 except that the etching treatment was not performed (Comparative Example 3). Further, a sputtering target was manufactured in the same manner as in Example 2 except that the blast treatment was not performed (Comparative Example 4).

Surface Characteristics X-ray diffraction was performed on the Ti sputtering targets obtained in Example 2, Comparative Example 3, and Comparative Example 4 to calculate the half width of the obtained peaks and to measure the surface roughness. Carried out. Table 3 shows the results.

[0052]

[Table 3]

Dust Measurement Results Using the Ti sputtering targets obtained in Example 2 and Comparative Examples 3 and 4, sputtering pressure: 4 × 10
^-1 (Pa), sputtering current 5A, argon flow rate 15s
Under a condition of ccm and a nitrogen flow rate of 30 sccm, a Ti film was formed on the Si wafer having a diameter of 6 inches by magnetron sputtering. 100 lots, 150 lots or 200
The number of dust particles of 0.2 μm or more in the Ti film on the φ6 inch Si wafer after the lot was measured by a particle counter. Table 4 shows the results.

[0054]

[Table 4] As is clear from Table 4, the sputtering target of the present invention is excellent in generating less dust from the initial stage to the latter stage of the sputtering as compared with the sputtering target of the comparative example.

<Examples 3 to 6 and Comparative Examples 5 to 8> A masking process was performed so that the non-erosion portion of a lathe-finished Ti sputtering target having a diameter of 250 mm, a thickness of 15 mm and a purity of 5 N was exposed. S
Blasting was performed using iC abrasive grains [blasting conditions = abrasive grains: SiC, air pressure: 2 kgf / cm ² , nozzle diameter: φ2 mm, and sprayed so that the whole becomes uniform] Etching solution (ie,
, A liquid, a liquid, and a liquid) were subjected to an etching treatment under the conditions shown in Table 5 to produce a sputtering target. Solution A: Solution of H ₂ O = 1: 1 (ie, solution A diluted 2 times) Solution A: Solution of H ₂ O = 1: 4 (ie, solution A diluted 5 times) Solution) Solution A solution: A solution of H ₂ O = 1: 9 (that is, solution A
Here, the “solution A” refers to “a mixture of HF, HNO ₃ , HCl, and H ₂ O in a mixing ratio of HF: HNO ₃ : HCl: H ₂ O = 1: 1: 1: 6. "The liquid mixed in".

Surface Characteristics Ti obtained in Examples 3 to 6 and Comparative Examples 5 to 8 was used.
For the sputtering target, perform X-ray diffraction,
The half width was calculated from the obtained peak, and the surface roughness was measured. Table 5 shows the results.

Dust Measurement Results Ti obtained in Examples 3 to 6 and Comparative Examples 5 to 8
Using a sputtering target, sputtering pressure: 4 × 1
0 ^-1 (Pa), sputter current 5A, argon flow 15
magnetron sputtering on a φ6 inch Si wafer under the conditions of 30 sccm and a nitrogen flow rate of 30 sccm,
A film was formed. 100 lots, 150 lots or 20
The number of dust particles of 0.2 μm or more in the Ti film on the φ6-inch Si wafer after 0 lot was measured by a particle counter. Table 5 also shows the results.

[0058]

[Table 5] As is clear from Table 5, the sputtering target of the present invention is excellent in generating less dust from the initial stage to the latter stage of sputtering as compared with the sputtering target of the comparative example.

[0059]

As described above, the present invention can provide a sputtering target with less dust when forming a thin film and a method for producing the same, and can be used not only for semiconductors but also for liquid crystal displays and recordings. It can be used in various fields such as sputtering targets, and its industrial value is extremely high.

[Brief description of the drawings]

FIG. 1 is a sectional view schematically showing a specific example of a sputtering target according to the present invention.

FIG. 2 is a sectional view showing an example of a conventional general sputtering apparatus.

FIG. 3 is a schematic view showing a sampling point of a test piece when measuring a half width and a surface roughness of a sputtering target according to the present invention.

[Description of Signs] 1, 11 Sputtering target material 2, A Non-erosion region 3, 12 Backing plate 13 Substrate 14 Magnet M Magnetic field E Electric field

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (reference) // C22C 14/00 C22C 14/00 Z (72) Inventor Takashi Ishigami Shinsugita-machi, Isogo-ku, Yokohama-shi, Kanagawa No. 8 In the Toshiba Yokohama office of the Company Limited (72) Inventor Koichi Watanabe No. 8 in Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside the Toshiba Yokohama Office of the Company Limited (72) Takashi Watanabe Isogo-ku, Yokohama-shi, Kanagawa 8 Shinsugita-cho, Toshiba Yokohama Office (72) Inventor Yasuo Takasaka 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture F-term (reference) 4K029 BA17 CA05 DC03 DC07 DC12 DC22 4M104 BB14 DD40 HH20 5F103 AA08 BB22 DD30 NN10 PP20 RR10

Claims (7)

[Claims] A crystal plane (1) obtained by X-ray diffraction of at least a part of a non-erosion region of a surface to be sputtered.
01) The titanium sputtering target, wherein the peak half width is 0.25 to 0.5. 2. A half-value width determined by X-ray diffraction is 0.3.
2. The titanium sputtering target according to claim 1, wherein the thickness is from 0.45 to 0.45. 3. 3. The sputtering target according to claim 2,
The surface roughness of the non-erosion region is Ra: 1 to 3 μm,
Ry: 8 to 15 μm.
Or the titanium sputtering target according to any of 2. 4. The titanium sputtering target according to claim 1, wherein the sputtering target is bonded and integrated with a backing plate. 5. The titanium sputtering target according to claim 4, wherein the sputtering target is bonded and integrated with the backing plate by diffusion bonding or brazing. 6. The titanium sputtering target according to claim 1, wherein the non-erosion region is finished by blasting and etching. 7. The titanium according to claim 1, wherein at least a part of the non-erosion region of the surface to be sputtered is finished by blasting and then etching. A method for manufacturing a sputtering target.