JP2002175881A - Light emitting element - Google Patents
Light emitting elementInfo
- Publication number
- JP2002175881A JP2002175881A JP2000373518A JP2000373518A JP2002175881A JP 2002175881 A JP2002175881 A JP 2002175881A JP 2000373518 A JP2000373518 A JP 2000373518A JP 2000373518 A JP2000373518 A JP 2000373518A JP 2002175881 A JP2002175881 A JP 2002175881A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- derivatives
- layer
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- 150000002894 organic compounds Chemical class 0.000 claims abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- 239000001301 oxygen Substances 0.000 claims abstract description 36
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- 229910052749 magnesium Inorganic materials 0.000 description 3
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- 150000004986 phenylenediamines Chemical class 0.000 description 3
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- 239000010457 zeolite Substances 0.000 description 3
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 2
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 2
- SULWTXOWAFVWOY-PHEQNACWSA-N 2,3-bis[(E)-2-phenylethenyl]pyrazine Chemical class C=1C=CC=CC=1/C=C/C1=NC=CN=C1\C=C\C1=CC=CC=C1 SULWTXOWAFVWOY-PHEQNACWSA-N 0.000 description 2
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 2
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- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical class C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 2
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- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000013032 Hydrocarbon resin Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
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- 239000004952 Polyamide Substances 0.000 description 1
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- 239000004743 Polypropylene Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical class C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- QDGONURINHVBEW-UHFFFAOYSA-N dichlorodifluoroethylene Chemical group FC(F)=C(Cl)Cl QDGONURINHVBEW-UHFFFAOYSA-N 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- RTRAMYYYHJZWQK-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1 RTRAMYYYHJZWQK-UHFFFAOYSA-N 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229920003240 metallophthalocyanine polymer Chemical class 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- AODWRBPUCXIRKB-UHFFFAOYSA-N naphthalene perylene Chemical group C1=CC=CC2=CC=CC=C21.C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 AODWRBPUCXIRKB-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- XRBCRPZXSCBRTK-UHFFFAOYSA-N phosphonous acid Chemical class OPO XRBCRPZXSCBRTK-UHFFFAOYSA-N 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical class OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- DOIRQSBPFJWKBE-UHFFFAOYSA-N phthalic acid di-n-butyl ester Natural products CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001490 poly(butyl methacrylate) polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】
【課題】 発光輝度、発光効率及び耐久性に優れ、フル
カラーディスプレイ、バックライト、照明光源等の面光
源、プリンター等の光源アレイ等に有効に利用できる発
光素子を提供する。
【解決手段】 本発明の発光素子は基材上に透明電極、
燐光発光性化合物を含有する発光層を含む一層以上の有
機化合物層及び背面電極を積層してなる発光積層体、並
びに有機化合物層を外部の空気から遮断する封止部材を
有し、発光積層体と封止部材との間の空間には、酸素を
吸着する材料又は酸素と反応する材料が設置されている
ことを特徴とする。(57) [Problem] To provide a light emitting element which is excellent in light emission luminance, light emission efficiency and durability, and can be effectively used for a surface light source such as a full color display, a backlight, an illumination light source, and a light source array such as a printer. SOLUTION: The light emitting element of the present invention has a transparent electrode on a substrate,
A light-emitting laminate including at least one organic compound layer including a light-emitting layer containing a phosphorescent compound and a back electrode, and a sealing member that shields the organic compound layer from external air. It is characterized in that a material that adsorbs oxygen or a material that reacts with oxygen is provided in a space between the sealing member and the sealing member.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、発光輝度、発光効
率及び耐久性に優れた発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device having excellent light emission luminance, light emission efficiency and durability.
【0002】[0002]
【従来の技術】有機物質を使用した有機発光素子は、固
体発光型の安価な大面積フルカラー表示素子や書き込み
光源アレイとしての用途が有望視されており、近年活発
な研究開発が進められている。一般に有機発光素子は発
光層を含む有機化合物層及び該有機化合物層を挟んだ一
対の対向電極から構成される。このような有機発光素子
に電圧を印加すると、有機化合物層に陰極から電子が注
入され陽極から正孔が注入される。この電子と正孔が発
光層において再結合し、エネルギー準位が伝導帯から価
電子帯に戻る際にエネルギーを光として放出することに
より発光が得られる。2. Description of the Related Art Organic light-emitting elements using organic substances are expected to be used as solid-state light-emitting inexpensive large-area full-color display elements and writing light source arrays, and active research and development have been advanced in recent years. . In general, an organic light-emitting device includes an organic compound layer including a light-emitting layer and a pair of counter electrodes sandwiching the organic compound layer. When a voltage is applied to such an organic light emitting device, electrons are injected from the cathode into the organic compound layer, and holes are injected from the anode. The electrons and holes are recombined in the light emitting layer, and light is emitted by emitting energy as light when the energy level returns from the conduction band to the valence band.
【0003】従来の有機発光素子は、駆動電圧が高く発
光輝度及び発光効率が低いという問題を有している。近
年、この問題を解決するための技術が種々報告されてお
り、例えば有機化合物の蒸着により形成した有機薄膜を
有する有機発光素子が知られている(アプライド フィ
ジクス レターズ, 51巻, 913頁, 1987年)。この有機
発光素子は電子輸送材料からなる電子輸送層と正孔輸送
材料からなる正孔輸送層の積層二層構造を有し、単層型
素子に比べて大幅に向上した発光特性を示す。正孔輸送
材料としては低分子アミン化合物、電子輸送材料兼発光
材料としては8-キノリノールのアルミニウム錯体(Al
q)を用いており、発光色は緑色である。蒸着有機薄膜
を有する有機発光素子はその後も数多く報告されている
(マクロモレキュラリー シンポジウム, 125巻, 1頁,
1997年に記載の参考文献参照)が、このような有機発
光素子は無機LED素子や蛍光管に比べると非常に発光効
率が低く、このことが実用化に際し大きな問題となって
いる。The conventional organic light emitting device has a problem that the driving voltage is high and the light emission luminance and light emission efficiency are low. In recent years, various techniques for solving this problem have been reported. For example, an organic light-emitting device having an organic thin film formed by vapor deposition of an organic compound is known (Applied Physics Letters, 51, 913, 1987). ). This organic light-emitting device has a laminated two-layer structure of an electron transporting layer made of an electron transporting material and a hole transporting layer made of a hole transporting material, and exhibits significantly improved emission characteristics as compared with a single-layered device. A low molecular weight amine compound is used as the hole transport material, and an 8-quinolinol aluminum complex (Al
q) is used, and the emission color is green. Many organic light-emitting devices having vapor-deposited organic thin films have been reported thereafter (Macromolecular Symposium, Vol. 125, p. 1,
However, such an organic light-emitting device has a very low luminous efficiency as compared with an inorganic LED device and a fluorescent tube, which is a serious problem in practical use.
【0004】従来の有機発光素子の殆どは有機発光材料
の一重項励起子から得られる蛍光発光を利用したもので
ある。単純な量子化学のメカニズムにおいては、励起子
状態において蛍光発光が得られる一重項励起子と燐光発
光が得られる三重項励起子の比は1対3である。即ち、
蛍光発光を利用している限りは励起子の25%しか有効活
用できず、蛍光発光素子の発光効率は低い。このような
状況下、最近、イリジウムのフェニルピリジン錯体を用
いた燐光発光素子が報告された(アプライドフィジクス
レター, 75巻, 4頁, 1999年、ジャパニーズ ジャー
ナル オブアプライド フィジクス, 38巻, L1502頁, 1
999年等)。これらの燐光発光素子は従来の蛍光発光素
子に比べて2〜3倍の発光効率を示すが、その発光効率
は理論的な発光効率限界よりは低く、実用化のためには
更なる発光効率向上が求められている。また、従来の蛍
光発光素子と比較して、該燐光発光素子は耐久性の点で
も劣っており、その改良が強く望まれている。[0004] Most of the conventional organic light-emitting devices utilize fluorescence emitted from singlet excitons of an organic light-emitting material. In a simple quantum chemistry mechanism, the ratio of a singlet exciton capable of obtaining fluorescence emission to a triplet exciton capable of obtaining phosphorescence emission in an exciton state is 1: 3. That is,
As long as fluorescent light is used, only 25% of the excitons can be effectively used, and the light emitting efficiency of the fluorescent light emitting device is low. Under such circumstances, a phosphorescent device using an iridium phenylpyridine complex has recently been reported (Applied Physics Letter, Vol. 75, pp. 4, 1999, Japanese Journal of Applied Physics, Vol. 38, L1502, 1
999 years). These phosphorescent devices exhibit luminous efficiencies that are 2-3 times higher than those of conventional fluorescent luminous devices, but their luminous efficiencies are lower than the theoretical luminous efficiency limit, and the luminous efficiency is further improved for practical use. Is required. Further, as compared with the conventional fluorescent light emitting device, the phosphorescent light emitting device is inferior in durability, and improvement thereof is strongly desired.
【0005】[0005]
【発明が解決しようとする課題】本発明の目的は、発光
輝度、発光効率及び耐久性に優れ、フルカラーディスプ
レイ、バックライト、照明光源等の面光源、プリンター
等の光源アレイ等に有効に利用できる発光素子を提供す
ることである。SUMMARY OF THE INVENTION An object of the present invention is to provide a light source array such as a full-color display, a back light, a surface light source such as an illumination light source, and a light source array such as a printer, which is excellent in light emission luminance, light emission efficiency and durability. It is to provide a light emitting device.
【0006】[0006]
【課題を解決するための手段】上記課題に鑑み鋭意研究
の結果、本発明者は、三重項励起子を利用する燐光発光
素子は、一重項励起子を利用する蛍光発光素子とは異な
り酸素の影響を受けやすく、酸素により消光現象が引き
起こされる事実を見出し、発光素子の封止部材内に酸素
を吸着する材料又は酸素と反応する材料を設置すること
によって、発光特性及び耐久性に優れた燐光発光素子が
得られることを発見し、本発明に想到した。Means for Solving the Problems As a result of intensive studies in view of the above problems, the present inventor has found that a phosphorescent light-emitting device using a triplet exciton is different from a fluorescent light-emitting device using a singlet exciton. It is easily affected and the fact that the quenching phenomenon is caused by oxygen is found. By installing a material that adsorbs oxygen or reacts with oxygen in the sealing member of the light emitting element, phosphorescence with excellent light emitting characteristics and durability is provided. The inventors have found that a light-emitting element can be obtained, and have reached the present invention.
【0007】即ち、本発明の発光素子は基材上に透明電
極、燐光発光性化合物を含有する発光層を含む一層以上
の有機化合物層及び背面電極を積層してなる発光積層
体、並びに有機化合物層を外部の空気から遮断する封止
部材を有し、発光積層体と封止部材との間の空間には、
酸素を吸着する材料又は酸素と反応する材料が設置され
ていることを特徴とする。本発明の発光素子は高い発光
輝度及び発光効率を示し、耐久性(特に高温高湿下での
耐久性)に優れており、フルカラーディスプレイ、バッ
クライト、照明光源等の面光源、プリンター等の光源ア
レイ等に有効に利用できる。That is, the light emitting device of the present invention comprises a light emitting laminate comprising a transparent electrode, one or more organic compound layers including a light emitting layer containing a phosphorescent compound and a back electrode laminated on a substrate, and an organic compound. A sealing member that blocks the layer from outside air, and a space between the light emitting laminate and the sealing member,
A material which adsorbs oxygen or reacts with oxygen is provided. The light-emitting device of the present invention exhibits high luminance and luminous efficiency, and has excellent durability (particularly, durability under high temperature and high humidity), and is a full-color display, a backlight, a surface light source such as an illumination light source, and a light source such as a printer. It can be used effectively for arrays and the like.
【0008】[0008]
【発明の実施の形態】本発明の発光素子は基材上に透明
電極、一層以上の有機化合物層及び背面電極を積層して
なる発光積層体、並びに有機化合物層を封止し外部の空
気を遮断する封止部材を有する。有機化合物層は発光層
を含み、発光層は燐光発光性化合物を含有する。必要に
応じて発光層以外の有機化合物層や保護層等を有してい
てもよい。BEST MODE FOR CARRYING OUT THE INVENTION The light-emitting device of the present invention comprises a light-emitting laminate comprising a transparent electrode, one or more organic compound layers and a back electrode laminated on a substrate, and sealing the organic compound layer to release external air. It has a sealing member for blocking. The organic compound layer includes a light emitting layer, and the light emitting layer contains a phosphorescent compound. If necessary, an organic compound layer other than the light-emitting layer, a protective layer, and the like may be provided.
【0009】上記発光積層体と封止部材との間には空間
が存在し、該空間には酸素を吸着する材料又は酸素と反
応する材料を設置する。発光積層体と封止部材との間に
空間を設けない場合には、発光積層体に含まれる薄膜が
極めて薄いために素子がショートすることがある。本発
明で用いる酸素を吸着する材料及び酸素と反応する材料
は、脱酸素剤、酸化防止剤等のような周囲の酸素濃度を
低下させることができる材料であれば特に限定されず、
また固体であっても液体であってもよい。酸素の吸着量
又は反応量を増やすためには、これらの材料として、大
きな表面積を有する粉末状の材料を用いるのが好まし
い。A space exists between the light emitting laminate and the sealing member, and a material that adsorbs oxygen or reacts with oxygen is provided in the space. If no space is provided between the light emitting laminate and the sealing member, the element may be short-circuited because the thin film included in the light emitting laminate is extremely thin. The material that adsorbs oxygen and the material that reacts with oxygen used in the present invention are not particularly limited as long as they can reduce the surrounding oxygen concentration such as oxygen scavengers and antioxidants.
It may be solid or liquid. In order to increase the amount of adsorbed or reacted oxygen, it is preferable to use a powdery material having a large surface area as these materials.
【0010】上記酸素を吸着する材料又は酸素と反応す
る材料は、無機物であっても有機物であってもよい。無
機物の場合の具体例としては、アルカリ金属(リチウ
ム、ナトリウム、カリウム、ルビジウム、セシウム
等)、アルカリ土類金属(ベリリウム、マグネシウム、
カルシウム、ストロンチウム、バリウム等)、低価数金
属化合物(V2O3、Nb2O3、CrO、MoO2、WO2、Mn2O3、Fe
O、OsO2、CoO、NiO等の低価数金属酸化物等)、III族元
素(ホウ素、アルミニウム、ガリウム、インジウム
等)、リン、硫黄、モレキュラーシーブ、ゼオライト、
カーボンモレキュラーシーブ、ゼオライトモレキュラー
シーブ等が挙げられる。また、有機物の場合の具体例と
しては、フェノール系酸化防止剤(ヒンダードフェノー
ル化合物等)、アミン系酸化防止剤(フェニレンジアミ
ン化合物等)、リン系酸化防止剤(ホスファイト化合
物、ホスホナイト化合物等)、硫黄系酸化防止剤(チオ
エーテル化合物等)等が挙げられる。これらの材料は一
種単独で使用しても、二種以上を併用してもよい。The material for adsorbing oxygen or reacting with oxygen may be inorganic or organic. Specific examples of inorganic substances include alkali metals (lithium, sodium, potassium, rubidium, cesium, etc.) and alkaline earth metals (beryllium, magnesium,
Calcium, strontium, barium, etc.), low valent metal compounds (V 2 O 3 , Nb 2 O 3 , CrO, MoO 2 , WO 2 , Mn 2 O 3 , Fe
O, OsO 2 , CoO, low-valent metal oxides such as NiO, etc.), Group III elements (boron, aluminum, gallium, indium, etc.), phosphorus, sulfur, molecular sieve, zeolite,
Carbon molecular sieves, zeolite molecular sieves and the like can be mentioned. Specific examples of organic substances include phenol-based antioxidants (hindered phenol compounds, etc.), amine-based antioxidants (phenylenediamine compounds, etc.), and phosphorus-based antioxidants (phosphite compounds, phosphonite compounds, etc.). And sulfur-based antioxidants (such as thioether compounds). These materials may be used alone or in combination of two or more.
【0011】酸素を吸着する材料又は酸素と反応する材
料の使用量は特に限定されず、発光積層体の大きさ、発
光素子全体の大きさ、これら材料の酸素吸着特性又は酸
素との反応特性等に応じて適宜選択すればよい。The amount of the material that adsorbs oxygen or the material that reacts with oxygen is not particularly limited, and the size of the light-emitting laminate, the size of the entire light-emitting element, the oxygen adsorption characteristics of these materials, the reaction characteristics with oxygen, etc. May be appropriately selected according to the conditions.
【0012】封止部材としては、封止キャップ、封止カ
バー等が使用できる。封止部材をなす材料は水分透過性
及び酸素透過性の低い材料であればよく、その具体例と
してはガラス、セラミック等の無機材料、ステンレス、
鉄、アルミ等の金属、ポリエチレンテレフタレート、ポ
リブチレンテレフタレート、ポリエチレンナフタレート
等のポリエステルやポリスチレン、ポリカーボネート、
ポリエーテルスルホン、ポリアリレート、アリルジグリ
コールカーボネート、ポリイミド、ポリシクロオレフィ
ン、ノルボルネン樹脂、ポリ(クロロトリフルオロエチ
レン)、テフロン(登録商標)、ポリテトラフルオロエ
チレン−ポリエチレン共重合体等の高分子材料等が挙げ
られる。中でも、フレキシブルな発光素子や塗布型発光
素子を形成するためには高分子材料が好ましい。As the sealing member, a sealing cap, a sealing cover and the like can be used. The material forming the sealing member may be any material having low moisture permeability and low oxygen permeability, and specific examples thereof include glass, inorganic materials such as ceramics, stainless steel, and the like.
Metals such as iron and aluminum, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, polystyrene, polycarbonate,
Polymer materials such as polyether sulfone, polyarylate, allyl diglycol carbonate, polyimide, polycycloolefin, norbornene resin, poly (chlorotrifluoroethylene), Teflon (registered trademark), and polytetrafluoroethylene-polyethylene copolymer Is mentioned. Among them, a polymer material is preferable for forming a flexible light-emitting element or a coating-type light-emitting element.
【0013】本発明では、封止部材を発光積層体に設置
する封止工程は、窒素やアルゴン等の不活性ガス雰囲気
下で行うのが好ましい。また、封止部材を発光積層体に
設置する際には、適宜封止剤(接着剤)を用いてよい。
封止剤としては紫外線硬化樹脂、熱硬化樹脂、二液型硬
化樹脂、水分硬化樹脂、嫌気性硬化樹脂、ホットメルト
型樹脂等が使用可能である。In the present invention, the sealing step of installing the sealing member on the light emitting laminate is preferably performed in an atmosphere of an inert gas such as nitrogen or argon. When the sealing member is installed on the light emitting laminate, a sealing agent (adhesive) may be used as appropriate.
As the sealant, an ultraviolet curable resin, a thermosetting resin, a two-component curable resin, a moisture curable resin, an anaerobic curable resin, a hot melt resin, or the like can be used.
【0014】図1〜3は各々、本発明の発光素子の一実
施形態を示す概略断面図である。図1〜3に示す各発光
素子は、基材1の上に透明電極2、有機化合物層3及び
背面電極4を積層してなる発光積層体7、並びに有機化
合物層3を封止する封止部材9を有する。これらの実施
形態においては、封止部材9を封止剤(接着剤)8によ
って基材1、透明電極リード5、背面電極リード6等に
接着し、発光積層体7に設置する。本発明では、図1に
示すように封止部材9を背面電極4側のみに設置して
も、図2及び3に示すように発光積層体7全体を封止部
材9で覆ってもよく、有機化合物層3を外部の空気から
遮断することができれば、封止部材9の形状、大きさ、
厚さ等は特に限定されない。また、図2及び3に示す発
光素子のように発光積層体7全体を封止部材9で覆う場
合等は、封止剤8を用いずに封止部材9同士を熱融着し
てもよい。FIGS. 1 to 3 are schematic sectional views each showing an embodiment of the light emitting device of the present invention. Each of the light-emitting elements shown in FIGS. 1 to 3 has a light-emitting laminate 7 in which a transparent electrode 2, an organic compound layer 3, and a back electrode 4 are laminated on a substrate 1, and sealing for sealing the organic compound layer 3. It has a member 9. In these embodiments, the sealing member 9 is adhered to the base material 1, the transparent electrode lead 5, the back electrode lead 6, and the like with a sealing agent (adhesive) 8, and installed on the light emitting laminate 7. In the present invention, the sealing member 9 may be provided only on the back electrode 4 side as shown in FIG. 1, or the entire light emitting laminate 7 may be covered with the sealing member 9 as shown in FIGS. If the organic compound layer 3 can be shielded from the outside air, the shape, size,
The thickness and the like are not particularly limited. When the entire light emitting laminate 7 is covered with the sealing member 9 as in the light emitting elements shown in FIGS. 2 and 3, the sealing members 9 may be thermally fused to each other without using the sealing agent 8. .
【0015】図1〜3に示すように、発光積層体7と封
止部材9との間には空間10が存在し、該空間10には酸素
を吸着する材料又は酸素と反応する材料12を設置する。
設置方法は特に限定されず、例えば図1に示すように封
止部材9の内側に凹部11を設けてそこに挿入したり、粘
着テープ等を用いて封止部材9の内面に張り付けたりし
てよい。粉末状又は液体状の酸素を吸着する材料又は酸
素と反応する材料12を用いて、空間10を満たしてもよ
い。As shown in FIGS. 1 to 3, a space 10 exists between the light emitting laminate 7 and the sealing member 9, and a material 12 that adsorbs oxygen or reacts with oxygen is provided in the space 10. Install.
The installation method is not particularly limited. For example, as shown in FIG. 1, a concave portion 11 is provided inside the sealing member 9 and inserted therein, or attached to the inner surface of the sealing member 9 using an adhesive tape or the like. Good. The space 10 may be filled with a powdery or liquid material that adsorbs oxygen or a material 12 that reacts with oxygen.
【0016】空間10には、水分吸収剤又は不活性液体を
挿入してもよい。水分吸収剤は特に限定されず、具体例
としては酸化バリウム、酸化ナトリウム、酸化カリウ
ム、酸化カルシウム、硫酸ナトリウム、硫酸カルシウ
ム、硫酸マグネシウム、五酸化リン、塩化カルシウム、
塩化マグネシウム、塩化銅、フッ化セシウム、フッ化ニ
オブ、臭化カルシウム、臭化バナジウム、モレキュラー
シーブ、ゼオライト、酸化マグネシウム等が挙げられ
る。不活性液体としてはパラフィン類、流動パラフィン
類、フッ素系溶剤(パーフルオロアルカン、パーフルオ
ロアミン、パーフルオロエーテル等)、塩素系溶剤、シ
リコーンオイル類等が使用可能である。The space 10 may be filled with a moisture absorbent or an inert liquid. The water absorbent is not particularly limited, and specific examples thereof include barium oxide, sodium oxide, potassium oxide, calcium oxide, sodium sulfate, calcium sulfate, magnesium sulfate, phosphorus pentoxide, calcium chloride,
Examples thereof include magnesium chloride, copper chloride, cesium fluoride, niobium fluoride, calcium bromide, vanadium bromide, molecular sieve, zeolite, and magnesium oxide. As the inert liquid, paraffins, liquid paraffins, fluorine solvents (perfluoroalkane, perfluoroamine, perfluoroether, etc.), chlorine solvents, silicone oils and the like can be used.
【0017】本発明の発光素子において、発光積層体の
構成は、基材上に透明電極/発光層/背面電極、透明電
極/発光層/電子輸送層/背面電極、透明電極/正孔輸
送層/発光層/電子輸送層/背面電極、透明電極/正孔
輸送層/発光層/背面電極、透明電極/発光層/電子輸
送層/電子注入層/背面電極、透明電極/正孔注入層/
正孔輸送層/発光層/電子輸送層/電子注入層/背面電
極等をこの順に積層した構成、これらを逆に積層した構
成等であってよい。発光層は燐光発光性化合物を含有
し、通常、透明電極から発光が取り出される。各層に用
いる化合物の具体例については、例えば「月刊ディスプ
レイ」1998年10月号別冊の「有機ELディスプレイ」(テ
クノタイムズ社)等に記載されている。In the light-emitting device of the present invention, the structure of the light-emitting laminate is such that a transparent electrode / light-emitting layer / back electrode, a transparent electrode / light-emitting layer / electron transport layer / back electrode, and a transparent electrode / hole transport layer are formed on a substrate. / Emitting layer / Electron transport layer / Back electrode, Transparent electrode / Hole transport layer / Emitting layer / Back electrode, Transparent electrode / Emitting layer / Electron transport layer / Electron injection layer / Back electrode, Transparent electrode / Hole injection layer /
A configuration in which a hole transport layer / light-emitting layer / electron transport layer / electron injection layer / back electrode and the like are stacked in this order, a configuration in which these are stacked in reverse, and the like may be used. The light emitting layer contains a phosphorescent compound, and light is normally extracted from the transparent electrode. Specific examples of the compound used for each layer are described in, for example, “OLED Display” (Techno Times), a separate volume of “Monthly Display”, October 1998.
【0018】有機化合物層の形成位置は特に制限され
ず、発光素子の用途及び目的に応じて適宜選択すること
ができるが、透明電極又は背面電極上に形成するのが好
ましい。このとき有機化合物層は透明電極又は背面電極
の全面又は一部に形成してよい。有機化合物層の形状、
大きさ及び厚みも目的に応じて適宜選択することができ
る。The formation position of the organic compound layer is not particularly limited and can be appropriately selected depending on the use and purpose of the light emitting device. However, it is preferable to form the organic compound layer on a transparent electrode or a back electrode. At this time, the organic compound layer may be formed on the entire surface or a part of the transparent electrode or the back electrode. The shape of the organic compound layer,
The size and thickness can also be appropriately selected according to the purpose.
【0019】有機化合物層は乾式製膜法又は湿式製膜法
により製膜してよいが、湿式製膜法を用いると有機化合
物層を容易に大面積化することができ、高輝度で発光効
率に優れた発光素子が低コストで効率よく得られ、好ま
しい。乾式製膜法としては蒸着法、スパッタ法等が使用
でき、湿式製膜法としてはディッピング法、スピンコー
ト法、ディップコート法、キャスト法、ダイコート法、
ロールコート法、バーコート法、グラビアコート法等が
使用可能である。これらの製膜法は有機化合物層の材料
に応じて適宜選択できる。湿式製膜法により製膜した場
合は製膜した後に乾燥してよい。乾燥は塗布層が損傷し
ないように温度、圧力等の条件を選択して行う。The organic compound layer may be formed by a dry film forming method or a wet film forming method. However, when the wet film forming method is used, the area of the organic compound layer can be easily increased, and high luminance and luminous efficiency can be obtained. A light-emitting element having an excellent quality can be efficiently obtained at low cost, which is preferable. As a dry film forming method, a vapor deposition method, a sputtering method, etc. can be used, and as a wet film forming method, a dipping method, a spin coating method, a dip coating method, a casting method, a die coating method,
Roll coating, bar coating, gravure coating and the like can be used. These film forming methods can be appropriately selected according to the material of the organic compound layer. When the film is formed by a wet film forming method, the film may be dried after forming the film. Drying is performed by selecting conditions such as temperature and pressure so as not to damage the coating layer.
【0020】上記湿式製膜法で用いる塗布液は通常、有
機化合物層の材料と、それを溶解又は分散するための溶
剤からなる。溶剤は特に限定されず、有機化合物層に用
いる材料に応じて選択すればよい。溶剤の具体例として
は、ハロゲン系溶剤(クロロホルム、四塩化炭素、ジク
ロロメタン、1,2-ジクロロエタン、クロロベンゼン
等)、ケトン系溶剤(アセトン、メチルエチルケトン、
ジエチルケトン、n-プロピルメチルケトン、シクロヘキ
サノン等)、芳香族系溶剤(ベンゼン、トルエン、キシ
レン等)、エステル系溶剤(酢酸エチル、酢酸 n-プロ
ピル、酢酸 n-ブチル、プロピオン酸メチル、プロピオ
ン酸エチル、γ-ブチロラクトン、炭酸ジエチル等)、
エーテル系溶剤(テトラヒドロフラン、ジオキサン
等)、アミド系溶剤(ジメチルホルムアミド、ジメチル
アセトアミド等)、ジメチルスルホキシド、水等が挙げ
られる。なお、塗布液中の溶剤に対する固形分量は特に
制限はなく、塗布液の粘度も製膜方法に応じて任意に選
択することができる。The coating solution used in the above wet film-forming method usually comprises a material for an organic compound layer and a solvent for dissolving or dispersing the same. The solvent is not particularly limited, and may be selected according to the material used for the organic compound layer. Specific examples of the solvent include halogen solvents (chloroform, carbon tetrachloride, dichloromethane, 1,2-dichloroethane, chlorobenzene, etc.), ketone solvents (acetone, methyl ethyl ketone,
Diethyl ketone, n-propyl methyl ketone, cyclohexanone, etc., aromatic solvents (benzene, toluene, xylene, etc.), ester solvents (ethyl acetate, n-propyl acetate, n-butyl acetate, methyl propionate, ethyl propionate) , Γ-butyrolactone, diethyl carbonate, etc.),
Examples include ether solvents (such as tetrahydrofuran and dioxane), amide solvents (such as dimethylformamide and dimethylacetamide), dimethylsulfoxide, and water. The amount of the solid content relative to the solvent in the coating solution is not particularly limited, and the viscosity of the coating solution can be arbitrarily selected according to the film forming method.
【0021】本発明の発光素子は通常、その透明電極と
背面電極との間に2〜40ボルト程度の直流電圧(交流成
分を含んでもよい)又は直流電流を印加すると発光す
る。また、本発明の発光素子を駆動する際には、特開平
2-148687号、同6-301355号、同5-29080号、同7-134558
号、同8-234685号、同8-241047号、米国特許5828429
号、同6023308号、日本特許第2784615号等に記載の駆動
方法を利用することができる。以下、本発明で用いる発
光積層体をなす各層について詳述するが、本発明はそれ
らにより限定されない。The light emitting device of the present invention usually emits light when a DC voltage (which may include an AC component) or a DC current of about 2 to 40 volts is applied between the transparent electrode and the back electrode. When driving the light emitting device of the present invention,
2-148687, 6-301355, 5-29080, 7-134558
No. 8-234685, No. 8-241047, U.S. Pat.
And the driving methods described in Japanese Patent No. 6023308 and Japanese Patent No. 2784615 can be used. Hereinafter, each layer constituting the light emitting laminate used in the present invention will be described in detail, but the present invention is not limited thereto.
【0022】(A)基材 本発明で使用する基材は、水分を透過させない材料又は
水分透過率が極めて低い材料からなるのが好ましい。該
材料は、好ましくは有機化合物層から発せられる光を散
乱又は減衰させない。その具体例としては、ジルコニア
安定化イットリウム(YSZ)、ガラス等の無機材料、ポ
リエチレンテレフタレート、ポリブチレンテレフタレー
ト、ポリエチレンナフタレート等のポリエステルやポリ
スチレン、ポリカーボネート、ポリエーテルスルホン、
ポリアリレート、アリルジグリコールカーボネート、ポ
リイミド、ポリシクロオレフィン、ノルボルネン樹脂、
ポリ(クロロトリフルオロエチレン)等の有機材料等が挙
げられる。中でも、耐熱性、寸法安定性、耐溶剤性、電
気絶縁性及び加工性に優れ、且つ低通気性及び低吸湿性
である有機材料が特に好ましく使用できる。基材は単一
材料で形成しても、2種以上の材料で形成してもよい。
基材の材料は透明電極材料に応じて適宜選択してよく、
例えば透明電極が酸化インジウムスズ(ITO)からなる
場合には、ITOとの格子定数の差が小さい材料を用いる
のが好ましい。(A) Substrate The substrate used in the present invention is preferably made of a material that does not transmit moisture or a material that has a very low moisture permeability. The material preferably does not scatter or attenuate the light emitted from the organic compound layer. Specific examples thereof include inorganic materials such as zirconia-stabilized yttrium (YSZ), glass, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, polystyrene, polycarbonate, polyether sulfone,
Polyarylate, allyl diglycol carbonate, polyimide, polycycloolefin, norbornene resin,
Organic materials such as poly (chlorotrifluoroethylene) and the like can be mentioned. Among them, an organic material which is excellent in heat resistance, dimensional stability, solvent resistance, electric insulation and workability, and has low air permeability and low moisture absorption can be particularly preferably used. The substrate may be formed of a single material or may be formed of two or more materials.
The material of the base material may be appropriately selected according to the transparent electrode material,
For example, when the transparent electrode is made of indium tin oxide (ITO), it is preferable to use a material having a small difference in lattice constant from ITO.
【0023】基材の形状、構造、大きさ等は発光素子の
用途及び目的に応じて適宜選択することができる。形状
は板状とするのが一般的である。構造は単層構造であっ
ても積層構造であってもよい。基材は単一の部材で形成
しても、2以上の部材で形成してもよい。また、基材は
無色透明であっても有色透明であってもよいが、発光層
から発せられる光を散乱又は減衰させることがない点で
無色透明であるのが好ましい。The shape, structure, size, etc. of the substrate can be appropriately selected according to the use and purpose of the light emitting device. The shape is generally plate-like. The structure may be a single layer structure or a laminated structure. The substrate may be formed of a single member or may be formed of two or more members. The substrate may be colorless and transparent or colored and transparent, but is preferably colorless and transparent in that light emitted from the light emitting layer is not scattered or attenuated.
【0024】基材の電極側の面、電極と反対側の面又は
その両方に透湿防止層(ガスバリア層)を設けてもよ
い。透湿防止層を構成する材料としては窒化ケイ素、酸
化ケイ素等の無機物を用いるのが好ましい。透湿防止層
は高周波スパッタリング法等により成膜できる。また、
基材には必要に応じてハードコート層やアンダーコート
層を設けてもよい。A moisture permeation preventing layer (gas barrier layer) may be provided on the surface of the substrate on the electrode side, the surface on the side opposite to the electrode, or both. It is preferable to use an inorganic substance such as silicon nitride or silicon oxide as a material constituting the moisture permeation preventing layer. The moisture permeation preventing layer can be formed by a high frequency sputtering method or the like. Also,
The substrate may be provided with a hard coat layer or an undercoat layer as needed.
【0025】(B)透明電極 通常、透明電極は有機化合物層に正孔を供給する陽極と
しての機能を有するが、陰極として機能させることもで
き、この場合背面電極を陽極として機能させる。以下、
透明電極を陽極とする場合について説明する。(B) Transparent electrode Usually, the transparent electrode has a function as an anode for supplying holes to the organic compound layer, but it can also function as a cathode. In this case, the back electrode functions as an anode. Less than,
The case where the transparent electrode is used as the anode will be described.
【0026】透明電極の形状、構造、大きさ等は特に制
限されず、発光素子の用途及び目的に応じて適宜選択す
ることができる。透明電極を形成する材料としては、金
属、合金、金属酸化物、電気伝導性化合物、これらの混
合物等を用いることができ、好ましくは仕事関数が4eV
以上の材料を用いる。具体例としては、アンチモンをド
ープした酸化スズ(ATO)、フッ素をドープした酸化ス
ズ(FTO)、半導性金属酸化物(酸化スズ、酸化亜鉛、
酸化インジウム、酸化インジウムスズ(ITO)、酸化亜
鉛インジウム(IZO)等)、金属(金、銀、クロム、ニ
ッケル等)、これら金属と導電性金属酸化物との混合物
又は積層物、無機導電性物質(ヨウ化銅、硫化銅等)、
有機導電性材料(ポリアニリン、ポリチオフェン、ポリ
ピロール等)及びこれとITOとの積層物等が挙げられ
る。The shape, structure, size and the like of the transparent electrode are not particularly limited, and can be appropriately selected according to the use and purpose of the light emitting device. As a material for forming the transparent electrode, a metal, an alloy, a metal oxide, an electrically conductive compound, a mixture thereof, or the like can be used, and preferably, the work function is 4 eV.
The above materials are used. Specific examples include tin oxide (ATO) doped with antimony, tin oxide (FTO) doped with fluorine, and semiconductive metal oxides (tin oxide, zinc oxide,
Indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO), etc.), metals (gold, silver, chromium, nickel, etc.), mixtures or laminates of these metals and conductive metal oxides, inorganic conductive materials (Copper iodide, copper sulfide, etc.),
Organic conductive materials (polyaniline, polythiophene, polypyrrole, etc.) and laminates thereof with ITO are listed.
【0027】透明電極は印刷法、コーティング法等の湿
式方法、真空蒸着法、スパッタリング法、イオンプレー
ティング法等の物理的方法、CVD法、プラズマCVD法等の
化学的方法等によって基材上に形成することができる。
形成方法は透明電極材料との適性を考慮して適宜選択す
ればよい。例えば、透明電極の材料としてITOを用いる
場合には、直流又は高周波スパッタ法、真空蒸着法、イ
オンプレーティング法等を用いればよい。また透明電極
の材料として有機導電性材料を用いる場合には、湿式製
膜法を用いてよい。The transparent electrode is formed on the substrate by a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method, an ion plating method, or a chemical method such as a CVD method or a plasma CVD method. Can be formed.
The formation method may be appropriately selected in consideration of suitability for the transparent electrode material. For example, when ITO is used as the material of the transparent electrode, a direct current or high frequency sputtering method, a vacuum deposition method, an ion plating method, or the like may be used. When an organic conductive material is used as the material of the transparent electrode, a wet film forming method may be used.
【0028】透明電極のパターニングはフォトリソグラ
フィー等による化学的エッチング、レーザー等を用いた
物理的エッチング等により行うことができる。また、マ
スクを用いた真空蒸着やスパッタリング、リフトオフ
法、印刷法等によりパターニングしてもよい。The patterning of the transparent electrode can be performed by chemical etching using photolithography or the like, physical etching using a laser or the like. Alternatively, patterning may be performed by vacuum evaporation using a mask, sputtering, a lift-off method, a printing method, or the like.
【0029】透明電極の形成位置は発光素子の用途及び
目的に応じて適宜選択してよいが、基材上に形成するの
が好ましい。このとき透明電極は基材の表面全体に形成
しても一部のみに形成してもよい。The position for forming the transparent electrode may be appropriately selected according to the use and purpose of the light emitting device, but is preferably formed on a substrate. At this time, the transparent electrode may be formed on the entire surface of the substrate or only on a part thereof.
【0030】透明電極の厚みはその材料に応じて適宜選
択すればよいが、通常10nm〜50μmであり、好ましくは5
0nm〜20μmである。透明電極の抵抗値は103Ω/□以下
とするのが好ましく、102Ω/□以下とするのがより好
ましい。透明電極は無色透明であっても有色透明であっ
てもよい。透明電極側から発光を取り出すためには、そ
の透過率は60%以上とするのが好ましく、70%以上とす
るのがより好ましい。透過率は分光光度計を用いた公知
の方法に従って測定することができる。The thickness of the transparent electrode may be appropriately selected according to its material, but is usually 10 nm to 50 μm, preferably 5 nm.
0 nm to 20 μm. The transparent electrode preferably has a resistance value of 10 3 Ω / □ or less, more preferably 10 2 Ω / □ or less. The transparent electrode may be colorless and transparent or colored and transparent. In order to extract light emission from the transparent electrode side, the transmittance is preferably 60% or more, more preferably 70% or more. The transmittance can be measured according to a known method using a spectrophotometer.
【0031】また、「透明導電膜の新展開」(沢田豊監
修、シーエムシー刊、1999年)等に詳細に記載されてい
る電極も本発明に適用できる。特に耐熱性の低いプラス
チック基材を用いる場合は、透明電極材料としてITO又
はIZOを使用し、150℃以下の低温で製膜するのが好まし
い。Further, the electrodes described in detail in "New Development of Transparent Conductive Film" (edited by Yutaka Sawada, published by CMC, 1999) can also be applied to the present invention. In particular, when a plastic substrate having low heat resistance is used, it is preferable to use ITO or IZO as a transparent electrode material and form a film at a low temperature of 150 ° C. or lower.
【0032】(C)背面電極 通常、背面電極は有機化合物層に電子を注入する陰極と
しての機能を有するが、陽極として機能させることもで
き、この場合上記透明電極を陰極として機能させる。以
下、背面電極を陰極とする場合について説明する。(C) Back Electrode Normally, the back electrode has a function as a cathode for injecting electrons into the organic compound layer, but can also function as an anode. In this case, the transparent electrode functions as a cathode. Hereinafter, a case where the back electrode is a cathode will be described.
【0033】背面電極の形状、構造、大きさ等は特に制
限されず、発光素子の用途及び目的に応じて適宜選択す
ることができる。背面電極を形成する材料としては、金
属、合金、金属酸化物、電気伝導性化合物、これらの混
合物等を用いることができ、好ましくは仕事関数が4.5e
V以下の材料を用いる。具体例としては、アルカリ金属
(Li、Na、K、Cs等)、アルカリ土類金属(Mg、Ca
等)、金、銀、鉛、アルミニウム、ナトリウム−カリウ
ム合金、リチウム−アルミニウム合金、マグネシウム−
銀合金、インジウム、希土類金属(イッテルビウム等)
等が挙げられる。これらは単独で使用してもよいが、安
定性と電子注入性とを両立させるためには2種以上を併
用するのが好ましい。これら材料の中で、電子注入性の
観点からはアルカリ金属及びアルカリ土類金属が好まし
く、保存安定性の観点からはアルミニウムを主体とする
材料が好ましい。ここでアルミニウムを主体とする材料
とは、アルミニウム単独、アルミニウムと0.01〜10質量
%のアルカリ金属又はアルカリ土類金属との合金又は混
合物(リチウム−アルミニウム合金、マグネシウム−ア
ルミニウム合金等)を指す。背面電極の材料としては、
特開平2-15595号、特開平5-121172号等に詳述されてい
るものも使用できる。The shape, structure, size, and the like of the back electrode are not particularly limited, and can be appropriately selected according to the use and purpose of the light emitting device. As a material for forming the back electrode, a metal, an alloy, a metal oxide, an electrically conductive compound, a mixture thereof, or the like can be used.
Use the material below V. Specific examples include alkali metals (Li, Na, K, Cs, etc.) and alkaline earth metals (Mg, Ca
Etc.), gold, silver, lead, aluminum, sodium-potassium alloy, lithium-aluminum alloy, magnesium-
Silver alloy, indium, rare earth metal (ytterbium, etc.)
And the like. These may be used alone, but it is preferable to use two or more of them in order to achieve both stability and electron injection properties. Among these materials, alkali metals and alkaline earth metals are preferable from the viewpoint of electron injecting property, and materials mainly composed of aluminum are preferable from the viewpoint of storage stability. Here, the material mainly composed of aluminum refers to aluminum alone, an alloy or a mixture of aluminum and 0.01 to 10% by mass of an alkali metal or an alkaline earth metal (such as a lithium-aluminum alloy and a magnesium-aluminum alloy). As the material of the back electrode,
Those described in detail in JP-A-2-15595 and JP-A-5-121172 can also be used.
【0034】背面電極は印刷法、コーティング法等の湿
式方法、真空蒸着法、スパッタリング法、イオンプレー
ティング法等の物理的方法、CVD法、プラズマCVD法等の
化学的方法等によって形成することができる。形成方法
は背面電極材料との適性を考慮して適宜選択すればよ
い。例えば、背面電極の材料として2種以上の金属等を
用いる場合には、その材料を同時又は順次にスパッタし
て形成できる。The back electrode can be formed by a wet method such as a printing method or a coating method, a physical method such as a vacuum evaporation method, a sputtering method, an ion plating method, or a chemical method such as a CVD method or a plasma CVD method. it can. The formation method may be appropriately selected in consideration of suitability with the back electrode material. For example, when two or more kinds of metals or the like are used as the material of the back electrode, the materials can be formed by sputtering the materials simultaneously or sequentially.
【0035】背面電極のパターニングはフォトリソグラ
フィー等による化学的エッチング、レーザー等を用いた
物理的エッチング等により行うことができる。また、マ
スクを用いた真空蒸着やスパッタリング、リフトオフ
法、印刷法等によりパターニングしてもよい。The patterning of the back electrode can be performed by chemical etching using photolithography or the like, physical etching using a laser or the like. Alternatively, patterning may be performed by vacuum evaporation using a mask, sputtering, a lift-off method, a printing method, or the like.
【0036】背面電極の形成位置は発光素子の用途及び
目的に応じて適宜選択してよいが、有機化合物層上に形
成するのが好ましい。このとき背面電極は有機化合物層
の表面全体に形成しても一部のみに形成してもよい。ま
た、背面電極と有機化合物層との間にアルカリ金属又は
アルカリ土類金属のフッ化物等からなる誘電体層を0.1
〜5nmの厚みで設置してもよい。誘電体層は真空蒸着
法、スパッタリング法、イオンプレーティング法等によ
り形成することができる。The formation position of the back electrode may be appropriately selected according to the use and purpose of the light emitting device, but is preferably formed on the organic compound layer. At this time, the back electrode may be formed on the entire surface of the organic compound layer or only on a part thereof. Further, a dielectric layer made of an alkali metal or alkaline earth metal fluoride is provided between the back electrode and the organic compound layer by 0.1.
It may be installed with a thickness of 55 nm. The dielectric layer can be formed by a vacuum deposition method, a sputtering method, an ion plating method, or the like.
【0037】背面電極の厚みはその材料に応じて適宜選
択すればよいが、通常10nm〜5μmであり、好ましくは5
0nm〜1μmである。背面電極は透明であっても不透明で
あってもよい。透明背面電極は、上述した材料の層を1
〜10nmの厚みに薄く製膜し、更にITOやIZO等の透明導電
性材料を積層して形成してよい。The thickness of the back electrode may be appropriately selected according to its material, but is usually 10 nm to 5 μm, preferably 5 nm.
0 nm to 1 μm. The back electrode may be transparent or opaque. The transparent back electrode is composed of one layer of the material described above.
A thin film having a thickness of about 10 nm may be formed, and a transparent conductive material such as ITO or IZO may be laminated.
【0038】(D)発光層 本発明の発光素子において、発光層は燐光発光性化合物
を含有する。本発明で用いる燐光発光性化合物は、三重
項励起子から発光することができる化合物であれば特に
限定されることはない。燐光発光性化合物としては、オ
ルトメタル化錯体又はポルフィリン錯体を用いるのが好
ましく、オルトメタル化錯体を用いるのがより好まし
い。ポルフィリン錯体の中ではポルフィリン白金錯体が
好ましい。燐光発光性化合物は単独で使用しても2種以
上を併用してもよい。(D) Light Emitting Layer In the light emitting device of the present invention, the light emitting layer contains a phosphorescent compound. The phosphorescent compound used in the present invention is not particularly limited as long as it can emit light from triplet excitons. As the phosphorescent compound, an orthometalated complex or a porphyrin complex is preferably used, and an orthometalated complex is more preferably used. Among porphyrin complexes, porphyrin platinum complexes are preferred. The phosphorescent compounds may be used alone or in combination of two or more.
【0039】本発明でいうオルトメタル化錯体とは、山
本明夫著「有機金属化学 基礎と応用」, 150頁及び232
頁, 裳華房社(1982年)、H. Yersin著「Photochemistr
y and Photophysics of Coordination Compounds」, 71
〜77頁及び135〜146頁, Springer-Verlag社(1987年)
等に記載されている化合物群の総称である。オルトメタ
ル化錯体を形成する配位子は特に限定されないが、2-フ
ェニルピリジン誘導体、7,8-ベンゾキノリン誘導体、2-
(2-チエニル)ピリジン誘導体、2-(1-ナフチル)ピリジン
誘導体又は2-フェニルキノリン誘導体であるのが好まし
い。これら誘導体は置換基を有してもよい。また、これ
らのオルトメタル化錯体形成に必須の配位子以外に他の
配位子を有していてもよい。オルトメタル化錯体を形成
する中心金属としては、遷移金属であればいずれも使用
可能であり、本発明ではロジウム、白金、金、イリジウ
ム、ルテニウム、パラジウム等を好ましく用いることが
できる。中でもイリジウムが特に好ましい。このような
オルトメタル化錯体を含む有機化合物層は、発光輝度及
び発光効率に優れている。オルトメタル化錯体について
は、特願2000-254171号の段落番号0152〜0180にもその
具体例が記載されている。The orthometalated complex referred to in the present invention is described in "Basic and applied organometallic chemistry" by Akio Yamamoto, p.
Page, Shokabosha (1982), Photochemistr by H. Yersin
y and Photophysics of Coordination Compounds, '' 71
-77 and 135-146, Springer-Verlag (1987)
Etc. are generic names of the compound groups described in the above. The ligand forming the orthometalated complex is not particularly limited, but may be a 2-phenylpyridine derivative, a 7,8-benzoquinoline derivative,
It is preferably a (2-thienyl) pyridine derivative, a 2- (1-naphthyl) pyridine derivative or a 2-phenylquinoline derivative. These derivatives may have a substituent. Further, other ligands may be included in addition to the ligands essential for forming these ortho-metalated complexes. As the central metal forming the orthometalated complex, any transition metal can be used, and in the present invention, rhodium, platinum, gold, iridium, ruthenium, palladium and the like can be preferably used. Of these, iridium is particularly preferred. The organic compound layer containing such an ortho-metalated complex is excellent in light emission luminance and light emission efficiency. Specific examples of the orthometalated complex are also described in Japanese Patent Application No. 2000-254171, paragraphs 0152 to 0180.
【0040】本発明で用いるオルトメタル化錯体は、In
org. Chem., 30, 1685, 1991、Inorg. Chem., 27, 346
4, 1988、Inorg. Chem., 33, 545, 1994、Inorg. Chim.
Acta, 181, 245, 1991、J. Organomet. Chem., 335, 2
93, 1987、J. Am. Chem. Soc., 107, 1431, 1985 等に
記載の公知の手法で合成することができる。The orthometalated complex used in the present invention is In
org. Chem., 30, 1685, 1991; Inorg. Chem., 27, 346.
4, 1988, Inorg. Chem., 33, 545, 1994, Inorg. Chim.
Acta, 181, 245, 1991; J. Organomet. Chem., 335, 2
93, 1987, J. Am. Chem. Soc., 107, 1431, 1985 and the like.
【0041】発光層中の燐光発光性化合物の含有量は特
に制限されないが、例えば0.1〜70質量%であり、1〜2
0質量%であるのが好ましい。燐光発光性化合物の含有
量が0.1質量%未満であるか、又は70質量%を超える
と、その効果が十分に発揮されない場合がある。The content of the phosphorescent compound in the light emitting layer is not particularly limited, but is, for example, 0.1 to 70% by mass,
It is preferably 0% by mass. When the content of the phosphorescent compound is less than 0.1% by mass or more than 70% by mass, the effect may not be sufficiently exhibited.
【0042】本発明において、発光層は必要に応じてホ
スト化合物、正孔輸送材料、電子輸送材料、電気的に不
活性なポリマーバインダー等を含有してもよい。In the present invention, the light emitting layer may contain a host compound, a hole transporting material, an electron transporting material, an electrically inactive polymer binder, and the like, if necessary.
【0043】上記ホスト化合物とは、その励起状態から
燐光発光性化合物へエネルギー移動が起こり、その結
果、該燐光発光性化合物を発光させる化合物である。そ
の具体例としては、カルバゾール誘導体、トリアゾール
誘導体、オキサゾール誘導体、オキサジアゾール誘導
体、イミダゾール誘導体、ポリアリールアルカン誘導
体、ピラゾリン誘導体、ピラゾロン誘導体、フェニレン
ジアミン誘導体、アリールアミン誘導体、アミノ置換カ
ルコン誘導体、スチリルアントラセン誘導体、フルオレ
ノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シ
ラザン誘導体、芳香族第三級アミン化合物、スチリルア
ミン化合物、芳香族ジメチリデン化合物、ポルフィリン
化合物、アントラキノジメタン誘導体、アントロン誘導
体、ジフェニルキノン誘導体、チオピランジオキシド誘
導体、カルボジイミド誘導体、フルオレニリデンメタン
誘導体、ジスチリルピラジン誘導体、ナフタレンペリレ
ン等の複素環テトラカルボン酸無水物、フタロシアニン
誘導体、8-キノリノール誘導体の金属錯体、メタルフタ
ロシアニン、ベンゾオキサゾールやベンゾチアゾール等
を配位子とする金属錯体、ポリシラン化合物、ポリ(N-
ビニルカルバゾール)誘導体、アニリン共重合体、チオ
フェンオリゴマー、ポリチオフェン等の導電性高分子、
ポリチオフェン誘導体、ポリフェニレン誘導体、ポリフ
ェニレンビニレン誘導体、ポリフルオレン誘導体等が挙
げられる。ホスト化合物は1種単独で使用しても2種以
上を併用してもよい。The above-mentioned host compound is a compound that causes energy transfer from its excited state to the phosphorescent compound, thereby causing the phosphorescent compound to emit light. Specific examples thereof include carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, and styryl anthracene derivatives , Fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amine compounds, styrylamine compounds, aromatic dimethylidene compounds, porphyrin compounds, anthraquinodimethane derivatives, anthrone derivatives, diphenylquinone derivatives, thiopyrandioxide Derivatives, carbodiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, and naphthaleneperylene Carboxylic acid anhydrides, phthalocyanine derivatives, 8-quinolinol derivative metal complexes, metal phthalocyanine, metal complexes having benzoxazole or benzothiazole as a ligand, polysilane compounds, poly (N-
(Vinyl carbazole) derivatives, aniline copolymers, thiophene oligomers, conductive polymers such as polythiophene,
Examples thereof include a polythiophene derivative, a polyphenylene derivative, a polyphenylenevinylene derivative, and a polyfluorene derivative. The host compound may be used alone or in combination of two or more.
【0044】正孔輸送材料は陽極から正孔を注入する機
能、正孔を輸送する機能、及び陰極から注入された電子
を障壁する機能のいずれかを有しているものであれば特
に限定されず、低分子材料であっても高分子材料であっ
てもよい。その具体例としては、カルバゾール誘導体、
トリアゾール誘導体、オキサゾール誘導体、オキサジア
ゾール誘導体、イミダゾール誘導体、ポリアリールアル
カン誘導体、ピラゾリン誘導体、ピラゾロン誘導体、フ
ェニレンジアミン誘導体、アリールアミン誘導体、アミ
ノ置換カルコン誘導体、スチリルアントラセン誘導体、
フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘
導体、シラザン誘導体、芳香族第三級アミン化合物、ス
チリルアミン化合物、芳香族ジメチリデン化合物、ポル
フィリン化合物、ポリシラン化合物、ポリ(N-ビニルカ
ルバゾール)誘導体、アニリン共重合体、チオフェンオ
リゴマー、ポリチオフェン等の導電性高分子、ポリチオ
フェン誘導体、ポリフェニレン誘導体、ポリフェニレン
ビニレン誘導体、ポリフルオレン誘導体等が挙げられ
る。これらは単独で使用しても2種以上を混合して使用
してもよい。The hole transport material is not particularly limited as long as it has any of a function of injecting holes from the anode, a function of transporting holes, and a function of blocking electrons injected from the cathode. Alternatively, it may be a low molecular material or a high molecular material. Specific examples thereof include carbazole derivatives,
Triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives,
Fluorenone derivative, hydrazone derivative, stilbene derivative, silazane derivative, aromatic tertiary amine compound, styrylamine compound, aromatic dimethylidene compound, porphyrin compound, polysilane compound, poly (N-vinylcarbazole) derivative, aniline copolymer, thiophene Examples thereof include oligomers, conductive polymers such as polythiophene, polythiophene derivatives, polyphenylene derivatives, polyphenylenevinylene derivatives, and polyfluorene derivatives. These may be used alone or in combination of two or more.
【0045】電子輸送材料は陰極から電子を注入する機
能、電子を輸送する機能、及び陽極から注入された正孔
を障壁する機能のいずれかを有しているものであれば特
に限定されず、例えばトリアゾール誘導体、オキサゾー
ル誘導体、オキサジアゾール誘導体、フルオレノン誘導
体、アントラキノジメタン誘導体、アントロン誘導体、
ジフェニルキノン誘導体、チオピランジオキシド誘導
体、カルボジイミド誘導体、フルオレニリデンメタン誘
導体、ジスチリルピラジン誘導体、ナフタレンペリレン
等の複素環テトラカルボン酸無水物、フタロシアニン誘
導体、8-キノリノール誘導体の金属錯体、メタロフタロ
シアニン、ベンゾオキサゾールやベンゾチアゾール等を
配位子とする金属錯体、アニリン共重合体、チオフェン
オリゴマー、ポリチオフェン等の導電性高分子、ポリチ
オフェン誘導体、ポリフェニレン誘導体、ポリフェニレ
ンビニレン誘導体、ポリフルオレン誘導体等が使用可能
である。The electron transporting material is not particularly limited as long as it has any of a function of injecting electrons from the cathode, a function of transporting electrons, and a function of blocking holes injected from the anode. For example, triazole derivatives, oxazole derivatives, oxadiazole derivatives, fluorenone derivatives, anthraquinodimethane derivatives, anthrone derivatives,
Diphenylquinone derivatives, thiopyrandioxide derivatives, carbodiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, heterocyclic tetracarboxylic anhydrides such as naphthaleneperylene, phthalocyanine derivatives, metal complexes of 8-quinolinol derivatives, metallophthalocyanines, Metal complexes having benzoxazole or benzothiazole as ligands, aniline copolymers, thiophene oligomers, conductive polymers such as polythiophene, polythiophene derivatives, polyphenylene derivatives, polyphenylenevinylene derivatives, polyfluorene derivatives, etc. can be used. .
【0046】ポリマーバインダーとしては、ポリ塩化ビ
ニル、ポリカーボネート、ポリスチレン、ポリメチルメ
タクリレート、ポリブチルメタクリレート、ポリエステ
ル、ポリスルホン、ポリフェニレンオキシド、ポリブタ
ジエン、炭化水素樹脂、ケトン樹脂、フェノキシ樹脂、
ポリアミド、エチルセルロース、酢酸ビニル、ABS樹
脂、ポリウレタン、メラミン樹脂、不飽和ポリエステ
ル、アルキド樹脂、エポキシ樹脂、シリコン樹脂、ポリ
ビニルブチラール、ポリビニルアセタール等が使用可能
である。ポリマーバインダーを含有する発光層は、湿式
製膜法によって、容易に且つ大面積に塗布形成すること
ができる。As the polymer binder, polyvinyl chloride, polycarbonate, polystyrene, polymethyl methacrylate, polybutyl methacrylate, polyester, polysulfone, polyphenylene oxide, polybutadiene, hydrocarbon resin, ketone resin, phenoxy resin,
Polyamide, ethyl cellulose, vinyl acetate, ABS resin, polyurethane, melamine resin, unsaturated polyester, alkyd resin, epoxy resin, silicone resin, polyvinyl butyral, polyvinyl acetal and the like can be used. The light emitting layer containing the polymer binder can be easily applied to a large area by a wet film forming method.
【0047】発光層の厚みは10〜200nmとするのが好ま
しく、20〜80nmとするのがより好ましい。厚みが200nm
を超えると駆動電圧が上昇する場合があり、10nm未満で
あると発光素子が短絡する場合がある。The thickness of the light emitting layer is preferably from 10 to 200 nm, more preferably from 20 to 80 nm. 200nm thickness
If it exceeds, the driving voltage may increase, and if it is less than 10 nm, the light emitting element may be short-circuited.
【0048】(E)電子輸送層 本発明の発光素子は、必要に応じて上述した電子輸送材
料からなる電子輸送層を有してよい。電子輸送層は上述
のポリマーバインダーを含有してもよい。電子輸送層の
厚みは10〜200nmとするのが好ましく、20〜80nmとする
のがより好ましい。厚みが200nmを越えると駆動電圧が
上昇する場合があり、10nm未満であると発光素子が短絡
する場合がある。(E) Electron Transport Layer The light emitting device of the present invention may have an electron transport layer made of the above-described electron transport material, if necessary. The electron transport layer may contain the polymer binder described above. The thickness of the electron transport layer is preferably from 10 to 200 nm, more preferably from 20 to 80 nm. When the thickness exceeds 200 nm, the driving voltage may increase, and when the thickness is less than 10 nm, the light emitting element may short-circuit.
【0049】(F)正孔輸送層 本発明の発光素子は、必要に応じて上述した正孔輸送材
料からなる正孔輸送層を有してよい。正孔輸送層は上述
のポリマーバインダーを含有してもよい。正孔輸送層の
厚みは10〜200nmとするのが好ましく、20〜80nmとする
のがより好ましい。厚みが200nmを越えると駆動電圧が
上昇する場合があり、10nm未満であると発光素子が短絡
する場合がある。(F) Hole Transport Layer The light emitting device of the present invention may have a hole transport layer made of the above-described hole transport material, if necessary. The hole transport layer may contain the polymer binder described above. The thickness of the hole transport layer is preferably from 10 to 200 nm, more preferably from 20 to 80 nm. When the thickness exceeds 200 nm, the driving voltage may increase, and when the thickness is less than 10 nm, the light emitting element may short-circuit.
【0050】(G)その他 本発明の発光素子は、特開平7-85974号、同7-192866
号、同8-22891号、同10-275682号、同10-106746号等に
記載の保護層を有していてもよい。保護層は発光素子の
最上面に形成する。ここで最上面とは、基材、透明電
極、有機化合物層及び背面電極をこの順に積層する場合
には背面電極の外側表面を指し、基材、背面電極、有機
化合物層及び透明電極をこの順に積層する場合には透明
電極の外側表面を指す。保護層の形状、大きさ、厚み等
は特に限定されない。保護層をなす材料は、水分や酸素
等の発光素子を劣化させ得るものが素子内に侵入又は透
過するのを抑制する機能を有しているものであれば特に
限定されず、酸化ケイ素、二酸化ケイ素、酸化ゲルマニ
ウム、二酸化ゲルマニウム等が使用できる。(G) Others The light emitting device of the present invention is disclosed in JP-A-7-85974 and JP-A-7-192866.
, No. 8-22891, No. 10-275682, No. 10-106746 and the like. The protective layer is formed on the uppermost surface of the light emitting device. Here, the uppermost surface refers to the outer surface of the back electrode when the base material, the transparent electrode, the organic compound layer and the back electrode are laminated in this order, and the base material, the back electrode, the organic compound layer and the transparent electrode in this order. When laminating, it refers to the outer surface of the transparent electrode. The shape, size, thickness and the like of the protective layer are not particularly limited. The material forming the protective layer is not particularly limited as long as it has a function of preventing the light emitting element such as moisture or oxygen from deteriorating or permeating into the element. Silicon, germanium oxide, germanium dioxide and the like can be used.
【0051】保護層の形成方法は特に限定はなく、例え
ば真空蒸着法、スパッタリング法、反応性スパッタリン
グ法、分子センエピタキシ法、クラスターイオンビーム
法、イオンプレーティング法、プラズマ重合法、プラズ
マCVD法、レーザーCVD法、熱CVD法、コーティング法等
が適用できる。The method for forming the protective layer is not particularly limited, and examples thereof include a vacuum deposition method, a sputtering method, a reactive sputtering method, a molecular epitaxy method, a cluster ion beam method, an ion plating method, a plasma polymerization method, a plasma CVD method, Laser CVD, thermal CVD, coating, etc. can be applied.
【0052】また、発光素子には水分や酸素の侵入を防
止するための封止層を設けるのが好ましい。封止層を形
成する材料としては、テトラフルオロエチレンと少なく
とも1種のコモノマーとの共重合体、共重合主鎖に環状
構造を有する含フッ素共重合体、ポリエチレン、ポリプ
ロピレン、ポリメチルメタクリレート、ポリイミド、ポ
リユリア、ポリテトラフルオロエチレン、ポリクロロト
リフルオロエチレン、ポリジクロロジフルオロエチレ
ン、クロロトリフルオロエチレン又はジクロロジフルオ
ロエチレンと他のコモノマーとの共重合体、吸水率1%
以上の吸水性物質、吸水率0.1%以下の防湿性物質、金
属(In、Sn、Pb、Au、Cu、Ag、Al、Tl、Ni等)、金属酸
化物(MgO、SiO、SiO2、Al2O3、GeO、NiO、CaO、BaO、F
e2O3、Y2O3、TiO2等)、金属フッ化物(MgF2、LiF、AlF
3、CaF2等)、液状フッ素化炭素(パーフルオロアルカ
ン、パーフルオロアミン、パーフルオロエーテル等)、
該液状フッ素化炭素に水分や酸素の吸着剤を分散させた
もの等が使用可能である。It is preferable that the light emitting element is provided with a sealing layer for preventing intrusion of moisture or oxygen. As a material for forming the sealing layer, a copolymer of tetrafluoroethylene and at least one comonomer, a fluorinated copolymer having a cyclic structure in the copolymer main chain, polyethylene, polypropylene, polymethyl methacrylate, polyimide, Polyurea, polytetrafluoroethylene, polychlorotrifluoroethylene, polydichlorodifluoroethylene, chlorotrifluoroethylene or copolymer of dichlorodifluoroethylene with other comonomers, water absorption 1%
The above water-absorbing substances, moisture-proof substances having a water absorption of 0.1% or less, metals (In, Sn, Pb, Au, Cu, Ag, Al, Tl, Ni, etc.), metal oxides (MgO, SiO, SiO 2 , Al 2 O 3 , GeO, NiO, CaO, BaO, F
e 2 O 3 , Y 2 O 3 , TiO 2 etc.), metal fluorides (MgF 2 , LiF, AlF
3 , CaF 2 etc.), liquid fluorinated carbon (perfluoroalkane, perfluoroamine, perfluoroether etc.),
What disperse | distributed the adsorbent of moisture and oxygen in this liquid fluorinated carbon etc. can be used.
【0053】[0053]
【実施例】以下、実施例により本発明をさらに詳細に説
明するが、本発明はそれらに限定されるものではない。EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the present invention is limited thereto.
【0054】実施例1 厚み0.2mmのガラス板を2.5cm角に切断して基材を作製
し、これを真空チャンバー内に導入した。この基板上
に、SnO2含有率が10質量%であるITOターゲットを用い
て、DCマグネトロンスパッタ(条件:基材温度100℃、
酸素圧1×10-3Pa)によりITO透明電極を形成した。透
明電極の厚みは0.2μmとし、その表面抵抗は10Ω/□で
あった。 Example 1 A glass plate having a thickness of 0.2 mm was cut into 2.5 cm square to prepare a substrate, which was introduced into a vacuum chamber. On this substrate, a DC magnetron sputtering (condition: substrate temperature of 100 ° C., using an ITO target having a SnO 2 content of 10% by mass).
An ITO transparent electrode was formed at an oxygen pressure of 1 × 10 −3 Pa). The thickness of the transparent electrode was 0.2 μm, and the surface resistance was 10Ω / □.
【0055】透明電極を形成した基材を洗浄容器に入れ
IPA洗浄した後、UV−オゾン処理を30分間行った。続い
てこの透明電極上にN,N'-ジナフチル-N,N'-ジフェニル
ベンシジンを1nm/秒の速度で真空蒸着し、厚み0.04μ
mの正孔輸送層を形成した。次にこの正孔輸送層上にト
リス(2-フェニルピリジン)イリジウム錯体(燐光発光材
料)及び4,4'-N,N'-ジカルバゾールビフェニル(ホスト
材料)をそれぞれ0.1nm/秒、1nm/秒の速度で共蒸着
して厚み0.024μmの発光層を形成した。更に得られた発
光層上に2,2',2''-(1,3,5-ベンゼントリイル)トリス[3-
(2-メチルフェニル)-3H-イミダゾ[4,5-b]ピリジン]を1
nm/秒の速度で蒸着して厚み0.024μmの電子輸送層を設
けた。The substrate on which the transparent electrode is formed is placed in a cleaning container.
After IPA cleaning, UV-ozone treatment was performed for 30 minutes. Subsequently, N, N'-dinaphthyl-N, N'-diphenylbensidine was vacuum-deposited on the transparent electrode at a rate of 1 nm / sec to a thickness of 0.04 μm.
An m hole transport layer was formed. Next, a tris (2-phenylpyridine) iridium complex (phosphorescent material) and 4,4′-N, N′-dicarbazolebiphenyl (host material) were placed on the hole transport layer at 0.1 nm / sec and 1 nm / Co-evaporation was performed at a speed of seconds to form a light emitting layer having a thickness of 0.024 μm. Furthermore, 2,2 ', 2''-(1,3,5-benzenetriyl) tris [3-
(2-Methylphenyl) -3H-imidazo [4,5-b] pyridine]
An electron transport layer having a thickness of 0.024 μm was formed by vapor deposition at a speed of nm / sec.
【0056】得られた電子輸送層上にパターニングした
マスク(発光面積が5mm×5mmとなるマスク)を設置
し、蒸着装置内でマグネシウム/銀合金(マグネシウ
ム:銀=10:1(モル比))を0.25μm蒸着し、銀を0.3
μm蒸着して背面電極を形成した。透明電極及び背面電
極からアルミニウムのリード線を結線し、発光積層体を
形成した。A patterned mask (a mask having a light emitting area of 5 mm × 5 mm) was set on the obtained electron transport layer, and a magnesium / silver alloy (magnesium: silver = 10: 1 (molar ratio)) was set in a vapor deposition apparatus. 0.25 μm and silver 0.3
A back electrode was formed by μm evaporation. An aluminum lead wire was connected from the transparent electrode and the back electrode to form a light-emitting laminate.
【0057】内側に凹部を設けたステンレス製の封止カ
バーを窒素ガスで置換したグローブボックスに入れ、該
凹部に酸素吸着剤として10mgのマグネシウム粉末を入
れ、粘着テープで固着した。続いてこのグローブボック
スに上述のように得られた発光積層体を入れ、酸素吸着
剤を設置した上記封止カバーで紫外線硬化型接着剤(長
瀬チバ製、XNR5493)を用いて封止し、図1に示す素子
と同様の構成を有する実施例1の発光素子を作成した。A stainless steel sealing cover provided with a concave portion inside was placed in a glove box replaced with nitrogen gas, and 10 mg of magnesium powder as an oxygen adsorbent was placed in the concave portion and fixed with an adhesive tape. Subsequently, the light-emitting laminate obtained as described above was put into this glove box, and sealed with an ultraviolet-curing adhesive (XNR5493, manufactured by Chise Nagase, Ltd.) with the sealing cover provided with an oxygen adsorbent. Example 1 A light-emitting element of Example 1 having the same configuration as the element shown in FIG.
【0058】実施例2 マグネシウム粉末に換えてFeO粉末を用いたこと以外は
実施例1と同様に、実施例2の発光素子を作成した。[0058] Similarly, except for using FeO powder in place of the Example 2 Magnesium powder of Example 1 to prepare a light-emitting device of Example 2.
【0059】実施例3 マグネシウム粉末に換えて2,6-ジ-t-ブチル-4-メチルフ
ェノール粉末を用いたこと以外は実施例1と同様に、実
施例3の発光素子を作成した。[0059] Similarly, except for using 2,6-di -t- butyl-4-methylphenol powder in place Example 3 Magnesium powder as in Example 1 to prepare a light-emitting device of Example 3.
【0060】実施例4 マグネシウム粉末に換えてトリフェニルホスファイト粉
末を用いたこと以外は実施例1と同様に、実施例4の発
光素子を作成した。[0060] Similarly, except for using triphenyl phosphite powder in place of Example 4 Magnesium powder as in Example 1 to prepare a light-emitting element of Example 4.
【0061】比較例1 上記封止カバーの凹部にマグネシウム粉末を固着しなか
ったこと以外は実施例1と同様に、比較例1の発光素子
を作成した。[0061] Similarly, except for not fixed to the magnesium powder in the recess of the comparative example 1 the sealing cover as in Example 1 to prepare a light-emitting device of Comparative Example 1.
【0062】発光輝度及び発光効率の評価 東洋テクニカ製ソースメジャーユニット2400型を用い
て、上記のように得られた各発光素子に直流電圧を印加
して発光させ輝度を測定し、各発光素子の最高輝度
Lmax、最高輝度Lmaxが得られるときの電圧Vmax、輝度20
0cd/m2で発光させたときの発光効率η200、輝度2000cd/
m2で発光させたときの発光効率η2000(外部量子効率)
を求めた。また、各発光素子を85℃、95%RHの高温高湿
条件下で30日放置した後の最高輝度Lmax、電圧Vmax、並
びに発光効率η200及びη2000を求め、耐久性を評価し
た。結果を表1に示す。 Evaluation of Light Emission Luminance and Emission Efficiency Using a source measure unit 2400 manufactured by Toyo Technica, a DC voltage was applied to each light emitting element obtained as described above to emit light, and the luminance was measured. Maximum brightness
L max, the voltage V max when the maximum luminance L max is obtained, the luminance 20
Luminous efficiency η 200 when emitted at 0 cd / m 2 , luminance 2000 cd /
Luminous efficiency η 2000 when emitted at m 2 (external quantum efficiency)
I asked. The maximum luminance L max , voltage V max , and luminous efficiencies η 200 and η 2000 after leaving each light-emitting element under a high-temperature and high-humidity condition of 85 ° C. and 95% RH for 30 days were evaluated for durability. . Table 1 shows the results.
【0063】[0063]
【表1】 [Table 1]
【0064】表1に示すように、酸素を吸着する材料又
は酸素と反応する材料を用いなかった比較例1の発光素
子は低い発光輝度及び発光効率を示し、その耐久性は悪
かった。これに比較して、本発明の実施例1〜4の発光
素子は優れた発光輝度、発光効率及び耐久性を示した。As shown in Table 1, the light emitting device of Comparative Example 1 in which no material for adsorbing oxygen or a material reacting with oxygen was used exhibited low light emission luminance and light emission efficiency, and its durability was poor. In comparison, the light emitting devices of Examples 1 to 4 of the present invention exhibited excellent light emission luminance, light emission efficiency and durability.
【0065】[0065]
【発明の効果】以上詳述したように、三重項励起子を有
効に利用した本発明の発光素子は、発光輝度、発光効率
及び耐久性に優れており、フルカラーディスプレイ、バ
ックライト、照明光源等の面光源、プリンター等の光源
アレイ等に有効に利用できる。As described in detail above, the light emitting device of the present invention, which effectively utilizes triplet excitons, is excellent in light emission luminance, light emission efficiency, and durability, and is suitable for full color displays, backlights, illumination light sources, and the like. Surface light sources, light source arrays such as printers, and the like.
【図1】は本発明の発光素子の一実施形態を示す概略断
面図である。FIG. 1 is a schematic sectional view showing one embodiment of a light emitting device of the present invention.
【図2】は本発明の発光素子の一実施形態を示す概略断
面図である。FIG. 2 is a schematic sectional view showing one embodiment of the light emitting device of the present invention.
【図3】は本発明の発光素子の一実施形態を示す概略断
面図である。FIG. 3 is a schematic sectional view showing one embodiment of the light emitting device of the present invention.
1・・・基材 2・・・透明電極 3・・・有機化合物層 4・・・背面電極 5・・・透明電極リード 6・・・背面電極リード 7・・・発光積層体 8・・・封止剤(接着剤) 9・・・封止部材 10・・・空間 11・・・凹部 12・・・酸素を吸着する材料又は酸素と反応する材料 DESCRIPTION OF SYMBOLS 1 ... Base material 2 ... Transparent electrode 3 ... Organic compound layer 4 ... Back electrode 5 ... Transparent electrode lead 6 ... Back electrode lead 7 ... Light emitting laminated body 8 ... Sealant (adhesive) 9 Sealing member 10 Space 11 Concavity 12 Material that adsorbs oxygen or reacts with oxygen
Claims (1)
含有する発光層を含む一層以上の有機化合物層及び背面
電極を積層してなる発光積層体、並びに前記有機化合物
層を外部の空気から遮断する封止部材を有する発光素子
において、前記発光積層体と前記封止部材との間の空間
には、酸素を吸着する材料又は酸素と反応する材料が設
置されていることを特徴とする発光素子。1. A light-emitting laminate comprising a transparent electrode, one or more organic compound layers including a light-emitting layer containing a phosphorescent compound, and a back electrode laminated on a base material, and the organic compound layer formed by external air. In a light-emitting element having a sealing member that blocks light from a light-emitting element, a material that adsorbs oxygen or reacts with oxygen is provided in a space between the light-emitting laminate and the sealing member. Light emitting element.
Priority Applications (1)
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|---|---|---|---|
| JP2000373518A JP2002175881A (en) | 2000-12-07 | 2000-12-07 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000373518A JP2002175881A (en) | 2000-12-07 | 2000-12-07 | Light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002175881A true JP2002175881A (en) | 2002-06-21 |
Family
ID=18842887
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|---|---|---|---|
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Cited By (3)
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|---|---|---|---|---|
| JP2009093913A (en) * | 2007-10-09 | 2009-04-30 | Panasonic Corp | Display device |
| JP2009258615A (en) * | 2008-03-21 | 2009-11-05 | Seiko Epson Corp | Electrophoretic display |
| WO2024004124A1 (en) * | 2022-06-30 | 2024-01-04 | シャープディスプレイテクノロジー株式会社 | Light-emitting device and manufacturing method therefor |
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