JP2002158327A - Manufacturing method of electronic circuit device - Google Patents

Abstract

(57) Abstract: When mounting a semiconductor device on a mounting board using an anisotropic conductive film, an anisotropic conductive film portion protruding from between the semiconductor device and the mounting board has an upper surface. The present invention provides a method for manufacturing an electronic circuit device that can be mounted so as not to exceed the limit. A mounting substrate is held on a base, an anisotropic conductive film is provided on an electrode on one surface, and a bump and an electrode are aligned to form an anisotropic conductive film. The semiconductor device 20 is placed on the film 30, and the bump 21 and the electrode 11 are electrically connected to each other through the anisotropic conductive film 30 by applying pressure and heating from the upper surface of the semiconductor device 20, and are temporarily compressed. . Next, the anisotropic conductive film 30 is heated by suppressing the protruding anisotropic conductive film portion 30a from above by the heating means H2 having a heating surface wider by at least the area of the protruding anisotropic conductive film portion 30a. The semiconductor device 20 is fixed by solidification.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic circuit device, and more particularly to a method of manufacturing an electronic circuit device in which a semiconductor device in a bare chip state is mounted on both sides of a flexible substrate (flexible substrate).

[0002]

2. Description of the Related Art The demand for smaller, thinner, and lighter portable electronic devices, such as digital video cameras, digital mobile phones, and notebook computers, is increasing. While semiconductor devices have been reduced by 70% in three years, research and development have been made as an important issue how to increase the component mounting density on a mounting board.

Conventionally, as a package form of a semiconductor device, a DIP (Dual Inline Package) or PGA (P
Lead insertion type (TH) that inserts lead wires into through holes provided in a printed circuit board such as an in Grid Array
D: Through Hall Mount Device), QFP (Quad F
lat Package) or TCP (Tape Carrier Packag)
e) A surface mount device (SMD) in which lead terminals are soldered and mounted on the surface of a substrate has been used. Furthermore, to reduce the size and density of the device, a chip size package (CSP: Chip S
ize Package, also called FBGA (Fine-Pitch BGA)).

In order to further reduce the size and density of the device, a method of mounting a bare semiconductor chip (bare chip) on a mounting substrate has been developed. Bare chip mounting technology includes a COB in which a semiconductor chip is die-bonded on a mounting substrate with the electrode forming surface facing up, and then the semiconductor chip electrode and the mounting substrate electrode are electrically connected by wire bonding.
(Chip On Board) mode and a face-down method in which bumps (protrusion electrodes) are formed on chip electrodes in advance and the bump formation surface faces the mounting board. The bumps electrically and mechanically connect the semiconductor chip electrodes and mounting board electrodes. There is a flip-chip type that is electrically connected.

[0005] In the above-mentioned flip chip mode, the method of forming bumps on a semiconductor chip is roughly classified into a stud bump method using gold or the like and a solder bump method. The stud bump is formed on the semiconductor chip by wire bonding using a gold wire or the like, while the solder bump is formed by a plating method, a vapor deposition method, a ball transfer method, or the like.

A method has been developed in which a semiconductor chip having bumps formed by the above-described stud bump method or the like is mounted on a mounting substrate in a bare chip state using an anisotropic conductive film.

Here, the anisotropic conductive film is a film obtained by dispersing conductive balls in a resin binder such as a thermosetting resin and processing it into a film. Although the anisotropic conductive film itself has no conductivity, for example, when an anisotropic conductive film is arranged between a pair of electrodes and crushed by both electrodes, the conductive balls in the anisotropic conductive film are By contacting the surface, the electrodes can be electrically connected. By solidifying the resin binder in a state where the electrical connection between the electrodes has been obtained, both electrodes can be fixed.

FIG. 5A is a sectional view of an electronic circuit device manufactured by the above mounting method. A first electrode (wiring) is provided on one surface of the flexible (flexible) mounting substrate 10.
11 is formed, and a second electrode (wiring) 12 is formed on the other surface.
Are formed. A first bump 21 such as a gold stud bump formed on the first semiconductor chip 20 is mounted via a first anisotropic conductive film 30 so as to be connected to the first electrode 11. On the other hand, the second bump 23 such as a gold stud bump formed on the second semiconductor chip 22 is mounted via the second anisotropic conductive film 31 so as to be connected to the second electrode 12. I have.

FIG. 5B shows the first bump 21.
FIG. 4 is an enlarged cross-sectional view of a connection portion between (or a second bump 23) and a first electrode 11 (or a second electrode 12). The conductive balls B are dispersed in the first anisotropic conductive film 30 (or the second anisotropic conductive film 31). The first bump 21 (or the second bump 23) and the first electrode 11 (or the second electrode 12) form the first anisotropic conductive film 30 (or the second anisotropic conductive film 31). By crushing, the conductive ball B comes into contact with both the first bump 21 (or the second bump 23) and the first electrode 11 (or the second electrode 12), and an electrical connection between the two is made. ing. The resin binder of the anisotropic conductive film is solidified by thermosetting or the like, and the first semiconductor chip 20 (or the second semiconductor chip 20 (or
Semiconductor chip 22) is fixed on the mounting substrate 10.

A method for manufacturing the above electronic circuit device will be described. First, as shown in FIG. 6A, a first electrode (wiring) 11 is formed on one surface, and a second electrode (wiring) 11 is formed on the other surface.
The flexible (flexible) mounting substrate 10 on which the first electrode 11 is formed is held on the base P with the surface on which the first electrode 11 is formed facing upward. Next, the first electrode 1
1, a first anisotropic conductive film 30 is provided. next,
First semiconductor chip 20 on which first bumps 21 are formed
Is placed on the first anisotropic conductive film 30 with the first bump 21 and the first electrode 11 aligned.

Next, as shown in FIG. 6B, pressure and heat are applied from the upper surface of the first semiconductor chip 20 by the heater head H to the first semiconductor chip 20 via the first anisotropic conductive film 30. The bumps 21 and the first electrodes 11 are electrically connected to each other, and the first semiconductor chip 20 is temporarily compressed. At this time,
From between the mounting substrate 10 and the first semiconductor chip 20, the first
Of the anisotropic conductive film portion 30a protrudes into a convex shape.

Next, as shown in FIG. 7C, a fluoroethylene resin tape T is interposed between the upper surface of the first semiconductor chip 20 and the heating surface of the heater head H.
The first semiconductor chip 20 is fixed on the mounting board 10 by heating from the upper surface of the first semiconductor chip 20 to solidify the first anisotropic conductive film 30.

Next, as shown in FIG. 7D, the mounting substrate 10 is turned over so that the first semiconductor chip 20 side is the lower surface, and the surface of the mounting substrate on which the second electrode 12 is formed is the upper surface. Thus, the mounting board 10 is held on the base P. Next, a second anisotropic conductive film 31 is provided on the second electrode 12 at a position that is plane-symmetric with respect to the first anisotropic conductive film 10 when viewed from the mounting substrate 10. Next, the second semiconductor chip 22 on which the second bump 23 is formed is placed at a position that is plane-symmetric with respect to the first semiconductor chip 20 when viewed from the mounting substrate 10. And is placed on the second anisotropic conductive film 31. Here, it is assumed that the shape of the second semiconductor chip 22 is substantially the same as that of the first semiconductor chip 20.

Next, as shown in FIG. 8E, the heater head H presses and heats the upper surface of the second semiconductor chip 22 to heat the second semiconductor chip 22 through the second anisotropic conductive film 31. The bump 23 and the second electrode 12 are electrically connected, and the second semiconductor chip 22 is provisionally pressed. At this time,
From between the mounting substrate 10 and the second semiconductor chip 22, the second
Of the anisotropic conductive film portion 31a protrudes into a convex shape.

Next, as shown in FIG. 8F, a fluoroethylene resin tape T is interposed between the upper surface of the second semiconductor chip 20 and the heating surface of the heater head H.
The second semiconductor chip 22 is fixed on the mounting substrate 10 by heating from the upper surface of the second semiconductor chip 22 to solidify the second anisotropic conductive film 31.

[0016]

However, in the above-described mounting method, when the heater head is pressed from the upper surface of the semiconductor chip and temporarily press-bonded, a portion of the anisotropic conductive film is provided between the mounting substrate and the semiconductor chip. Protrudes into a convex shape, and in some cases, the protruding portion has a height exceeding the upper surface of the semiconductor chip, and when mounting the semiconductor chip on both sides of the mounting board as described above, the bump and the electrode of the mounting board There is a problem that a connection failure may occur.

That is, as shown in FIG. 9A, the first anisotropic conductive film portion 30a which protrudes from between the mounting substrate 10 and the first semiconductor chip 20 at the time of the temporary compression of the semiconductor chip 20 is formed. If the height exceeds the upper surface F of the first semiconductor chip 20, the first semiconductor chip 20
When the first anisotropic conductive film 30 is solidified by heating from the upper surface of the heater, the size of the heater head H to be used is reduced to the first size.
The distance d between the end face of the heater head H and the end face of the first semiconductor chip is 1 mm or less, for example, about 0.5 mm, and the protruding anisotropic conductive Since the film portion is not suppressed from above, the first anisotropic conductive film portion 3
0a solidifies beyond the upper surface F of the first semiconductor chip 20.

Next, as shown in FIG. 9B, the mounting substrate 10 is turned over so that the first semiconductor chip 20 side is the lower surface, and the surface of the mounting substrate on which the second electrode 12 is formed is the upper surface. Thus, the mounting board 10 is held on the base P. At this time,
Since the solidified first anisotropic conductive film portion 30a exceeds the upper surface F of the first semiconductor chip 20, the first anisotropic conductive film portion 30a corresponds to the base P, and As a result, an inclination S occurs on the upper surface of the first semiconductor chip 20 and the mounting substrate 10. In this state, the second semiconductor chip 22 on which the second bumps 23 are formed is placed on the second anisotropic conductive film 31, and the upper surface of the second semiconductor chip 22 is heated by the heater head H. When pressure and heat are applied, the pressure applied between the second bumps 23 and the second electrodes 12 is not uniform because the base P is inclined as shown in FIG. Second bump 2
A connection failure X occurs between the third electrode 12 and the second electrode 12.

The present invention has been made in view of the above problems, and the present invention provides a method for mounting a semiconductor device on a mounting substrate using an anisotropic conductive film, which protrudes from between the semiconductor device and the mounting substrate. By preventing the anisotropic conductive film portion from exceeding the upper surface of the semiconductor device, it is possible to prevent the occurrence of connection failure between the bumps and the electrodes of the mounting substrate even when the semiconductor device is mounted on both surfaces of the mounting substrate. An object of the present invention is to provide a method for manufacturing an electronic circuit device.

[0020]

In order to achieve the above object, a method of manufacturing an electronic circuit device according to the present invention is directed to a method of manufacturing a semiconductor device having bumps formed so as to be connected to a circuit pattern of a semiconductor chip. A method for manufacturing an electronic circuit device to be mounted on at least one surface of a formed mounting board, wherein the step of holding the mounting board on a base with one surface of the mounting board as an upper surface, Providing an anisotropic conductive film on the electrode on a surface, aligning the bump and the electrode, and mounting the semiconductor device on the anisotropic conductive film, Pressurizing the upper surface of the substrate to electrically connect the bumps and the electrodes via the anisotropic conductive film; and forming the anisotropic conductive film protruding from between the mounting substrate and the semiconductor device. Heating from the upper surface of the semiconductor device to solidify the anisotropic conductive film and fix the semiconductor device, while suppressing the lum portion from above so as not to exceed the height of the upper surface of the semiconductor device. .

In the method of manufacturing an electronic circuit device according to the present invention, preferably, the step of heating the upper surface of the semiconductor device to solidify the anisotropic conductive film and fixing the semiconductor device includes the steps of: Heating from the upper surface of the semiconductor device while suppressing the protruding anisotropic conductive film portion by a heating means having a heating surface wider by at least the area of the protruding anisotropic conductive film portion than the area of the upper surface of the semiconductor device. I do. More preferably, the heating means is at least 1 mm from an end face of the semiconductor device.
A heating means having a wide heating surface is used. Alternatively, more preferably, in the step of heating the upper surface of the semiconductor device to solidify the anisotropic conductive film and fixing the semiconductor device, the step of heating between the upper surface of the semiconductor device and the heating surface of the heating means Is heated with a fluoroethylene resin tape interposed therebetween.

In the method of manufacturing an electronic circuit device according to the present invention, preferably, the step of electrically connecting the bumps and the electrodes is performed by a temporary pressure bonding step of pressing and heating the semiconductor device from above. is there. Preferably, a flexible substrate is used as the mounting substrate.

In the above-described method of manufacturing an electronic circuit device according to the present invention, the mounting substrate is held on a base with one surface of the mounting substrate such as a flexible substrate facing up, and the electrodes are mounted on the electrodes on one surface. An anisotropic conductive film is provided. Next, the semiconductor device is mounted on the anisotropic conductive film by aligning the bumps and the electrodes. Next, pressure and heat are applied from the upper surface of the semiconductor device, and the bumps and the electrodes are electrically connected to each other via the anisotropic conductive film, and are temporarily compressed. Next, using a heating means having a heating surface wider than the end face of the semiconductor device by 1 mm or more by the area of the anisotropic conductive film portion protruding in the above-mentioned temporary press-bonding step, protrude from between the mounting substrate and the semiconductor device. The anisotropic conductive film portion is held down from above so as not to exceed the height of the upper surface of the semiconductor device, and the semiconductor is interposed between the upper surface of the semiconductor device and the heating surface of the heating means while a fluoroethylene resin tape is interposed therebetween. The semiconductor device is fixed by heating from the upper surface of the device to solidify the anisotropic conductive film.

According to the above-described method for manufacturing an electronic circuit device of the present invention, when the anisotropic conductive film is solidified, the height of the protruding anisotropic conductive film portion is suppressed, and the height of the protruding anisotropic conductive film portion is reduced. It is possible to prevent the mounting board from tilting when it is turned upside down, so that even when mounting the semiconductor device on both sides of the mounting board, the gap between the bump and the electrode of the mounting board can be prevented. It is possible to manufacture an electronic circuit device while preventing the occurrence of connection failure.

Further, in order to achieve the above object, a method of manufacturing an electronic circuit device according to the present invention has a bump formed to be connected to a circuit pattern of a semiconductor chip and has a substantially identical shape. The first semiconductor device and the second semiconductor device are connected to a first surface and a second surface of a mounting substrate on which electrodes are formed.
A method for manufacturing an electronic circuit device to be mounted on each of the surfaces, wherein the first surface of the mounting substrate on which the first electrode is formed is an upper surface, and the mounting substrate is held on a base; Providing a first anisotropic conductive film on the first electrode on the first surface, and aligning the first bump formed on the first semiconductor device with the first electrode; Placing the first semiconductor device on the first anisotropic conductive film, and pressing the upper surface of the first semiconductor device through the first anisotropic conductive film. Electrically connecting the first bump to the first electrode by using the first anisotropic conductive film portion protruding from between the mounting substrate and the first semiconductor device. 1. While holding down from above so as not to exceed the height of the top surface of the semiconductor device, A step of heating the top surface of the first semiconductor device to solidify the first anisotropic conductive film and fixing the first semiconductor device; Holding the mounting substrate on a base with the second surface of the mounting substrate on which the second electrode is formed as an upper surface, and viewing the mounting substrate from the mounting substrate on the second surface. Providing a second anisotropic conductive film on the second electrode at a position that is plane-symmetric with respect to the first anisotropic conductive film; The second bump formed on the second semiconductor device is aligned with the second electrode at a position that is plane-symmetric with respect to the semiconductor device, and the second bump is formed on the second anisotropic conductive film. Placing the second semiconductor device on the second semiconductor device; Pressurizing to electrically connect the second bump and the second electrode via the second anisotropic conductive film; and connecting between the mounting substrate and the second semiconductor device. By heating the second anisotropic conductive film portion from the upper surface of the second semiconductor device while suppressing it from above so that the protruding second anisotropic conductive film portion does not exceed the height of the upper surface of the second semiconductor device, Solidifying the anisotropic conductive film to fix the second semiconductor device.

In the method for manufacturing an electronic circuit device according to the present invention, preferably, the first anisotropic conductive film is solidified by heating from an upper surface of the first semiconductor device to thereby form the first anisotropic conductive film.
In the step of fixing the semiconductor device, the protruding portion is heated by a heating means having a heating surface at least as large as the area of the protruding first anisotropic conductive film portion than the area of the upper surface of the first semiconductor device. While suppressing the first anisotropic conductive film portion, heating is performed from the upper surface of the first semiconductor device. More preferably, the heating means is at least 1 mm from an end face of the first semiconductor device.
A heating means having a wide heating surface is used. Alternatively, more preferably, the first anisotropic conductive film is heated from the upper surface of the first semiconductor device to solidify the first anisotropic conductive film.
In the step of fixing the semiconductor device, heating is performed with a fluoroethylene resin tape interposed between the upper surface of the first semiconductor device and the heating surface of the heating means.

Preferably, in the method of manufacturing an electronic circuit device according to the present invention, the second anisotropic conductive film is solidified by heating from an upper surface of the second semiconductor device.
In the step of fixing the semiconductor device, the protruding portion is heated by a heating means having a heating surface which is at least larger than the area of the upper surface of the second semiconductor device by an area of the protruding second anisotropic conductive film portion. While suppressing the second anisotropic conductive film portion, heating is performed from the upper surface of the second semiconductor device. More preferably, the heating means is at least 1 mm from the end face of the second semiconductor device.
A heating means having a wide heating surface is used. Alternatively, more preferably, the second anisotropic conductive film is heated from the upper surface of the second semiconductor device to solidify the second anisotropic conductive film.
In the step of fixing the semiconductor device, the heating is performed with a fluoroethylene resin tape interposed between the upper surface of the second semiconductor device and the heating surface of the heating means.

In the method for manufacturing an electronic circuit device according to the present invention, preferably, the step of electrically connecting the first bump and the first electrode includes the step of electrically connecting the first bump to the first electrode from the upper surface of the first semiconductor device. This is a temporary pressure bonding step of applying pressure and heating. Alternatively, preferably, the step of electrically connecting the second bump and the second electrode is a temporary pressure bonding step of pressing and heating the upper surface of the second semiconductor device. Alternatively, preferably, a flexible substrate is used as the mounting substrate.

In the above-described method of manufacturing an electronic circuit device according to the present invention, first, the mounting substrate is held on a base with the first surface of the mounting substrate on which the first electrode is formed facing upward. Next, the first
A first anisotropic conductive film is provided on the first electrode. Next, the first bump formed on the first semiconductor device is aligned with the first electrode, and the first semiconductor device is placed on the first anisotropic conductive film.
Next, pressure is applied from the upper surface of the first semiconductor device to electrically connect the first bump to the first electrode via the first anisotropic conductive film. Next, the first anisotropic conductive film portion protruding from between the mounting substrate and the first semiconductor device is suppressed from above so as not to exceed the height of the upper surface of the first semiconductor device. The first semiconductor device is fixed by heating from the upper surface of the device to solidify the first anisotropic conductive film. Next, the mounting substrate is turned upside down and held on a base with the first semiconductor device side as the lower surface and the second surface of the mounting substrate on which the second electrode is formed as the upper surface. next,
A second anisotropic conductive film is provided on the second electrode at a position on the second surface that is plane-symmetric with respect to the first anisotropic conductive film when viewed from the mounting substrate. Next, the second bump formed on the second semiconductor device is aligned with the second electrode at a position that is plane-symmetric with respect to the first semiconductor device when viewed from the mounting substrate, and The second semiconductor device is placed on the second anisotropic conductive film. Next, pressure is applied from the upper surface of the second semiconductor device to electrically connect the second bump and the second electrode via the second anisotropic conductive film. Next, while suppressing the second anisotropic conductive film portion protruding from between the mounting substrate and the second semiconductor device from above so as not to exceed the height of the upper surface of the second semiconductor device, the second semiconductor The second semiconductor device is fixed by heating from the upper surface of the device to solidify the second anisotropic conductive film.

According to the method of manufacturing an electronic circuit device of the present invention, when the first anisotropic conductive film is solidified, the height of the protruding first anisotropic conductive film portion is suppressed, It is possible not to exceed the upper surface of the first semiconductor device, and it is possible to prevent the mounting substrate from being tilted when turned upside down, thereby mounting the second semiconductor device on the back surface of the mounting substrate. In this case, it is possible to manufacture the electronic circuit device while preventing the occurrence of a connection failure between the second bump and the second electrode of the mounting substrate.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for manufacturing an electronic circuit device according to the present invention will be described below with reference to the drawings.

FIG. 1A is a sectional view of an electronic circuit device manufactured by the method for manufacturing an electronic circuit device according to the present embodiment. A first electrode (wiring) 11 is formed on one surface of a flexible (flexible) mounting substrate 10, and a second electrode (wiring) 12 is formed on the other surface. A first bump 21 such as a gold stud bump formed on the first semiconductor chip 20 is connected to the first electrode 11.
It is mounted via the first anisotropic conductive film 30. On the other hand, a second bump 23 such as a gold stud bump formed on the second semiconductor chip 22 is
Is mounted via the second anisotropic conductive film 31 so as to be connected to the second conductive film 31.

FIG. 1B shows the first bump 21.
FIG. 4 is an enlarged cross-sectional view of a connection portion between (or a second bump 23) and a first electrode 11 (or a second electrode 12). The conductive balls B are dispersed in the first anisotropic conductive film 30 (or the second anisotropic conductive film 31). The first bump 21 (or the second bump 23) and the first electrode 11 (or the second electrode 12) form the first anisotropic conductive film 30 (or the second anisotropic conductive film 31). By crushing, the conductive ball B comes into contact with both the first bump 21 (or the second bump 23) and the first electrode 11 (or the second electrode 12), and an electrical connection between the two is made. ing. The resin binder of the anisotropic conductive film is solidified by thermosetting or the like, and the first semiconductor chip 20 (or the second semiconductor chip 20 (or
Semiconductor chip 22) is fixed on the mounting substrate 10.

Here, the first anisotropic conductive film portion 30a protruding from the mounting substrate 10 and the first semiconductor chip 20 to the convex shape, and from between the mounting substrate 10 and the second semiconductor chip 22. The height of the second anisotropic conductive film portion 31a protruding into the convex shape is suppressed to the same height as the upper surface F of the first semiconductor chip 20 and the second semiconductor chip 22 respectively.

A method for manufacturing the above electronic circuit device will be described. First, as shown in FIG. 2A, a first electrode (wiring) 11 is formed on one surface, and a second electrode (wiring) 11 is formed on the other surface.
The flexible (flexible) mounting substrate 10 on which the first electrode 11 is formed is held on the base P with the surface on which the first electrode 11 is formed facing upward. Next, the first electrode 1
1, a first anisotropic conductive film 30 is provided. next,
First semiconductor chip 20 on which first bumps 21 are formed
Is placed on the first anisotropic conductive film 30 with the first bump 21 and the first electrode 11 aligned.

Then, as shown in FIG. 2B, the first anisotropic conductive film 30 is pressed and heated from the upper surface of the first semiconductor chip 20 by the first heater head H1.
Then, the first bump 21 and the first electrode 11 are electrically connected to each other, and the first semiconductor chip 20 is temporarily bonded. At this time, the first anisotropic conductive film portion 30a protrudes from between the mounting substrate 10 and the first semiconductor chip 20 into a convex shape.

Next, as shown in FIG. 3C, while the fluoroethylene resin tape T is interposed between the upper surface of the first semiconductor chip 20 and the heating surface of the second heater head H2, The first anisotropic conductive film 30 is solidified by heating from the upper surface of the first semiconductor chip 20, and the first semiconductor chip 20 is fixed on the mounting substrate 10. At this time,
The size of the second heater head H2 is sufficiently large with respect to the area of the upper surface of the first semiconductor chip 20. For example, when the distance D between the end face of the second heater head H2 and the end face of the first semiconductor chip is 1 mm or more. Therefore, the protruding first anisotropic conductive film portion 30a can be suppressed from above,
The first anisotropic conductive film portion 30a can be prevented from solidifying beyond the upper surface F of the first semiconductor chip 20.

Next, as shown in FIG. 3D, the mounting substrate 10 is turned over so that the first semiconductor chip 20 side is the lower surface, and the surface of the mounting substrate on which the second electrode 12 is formed is the upper surface. Thus, the mounting board 10 is held on the base P. At this time,
Since the solidified first anisotropic conductive film portion 30a does not exceed the upper surface F of the first semiconductor chip 20, the base P
The mounting substrate 10 can be held without causing inclination with respect to.

Next, a second anisotropic conductive film 31 is provided on the second electrode 12 at a position symmetric with respect to the first anisotropic conductive film 10 when viewed from the mounting substrate 10.
Next, the second semiconductor chip 22 on which the second bump 23 is formed is placed at a position that is plane-symmetric with respect to the first semiconductor chip 20 when viewed from the mounting substrate 10. And is placed on the second anisotropic conductive film 31. Here, it is assumed that the shape of the second semiconductor chip 22 is substantially the same as that of the first semiconductor chip 20.

Next, as shown in FIG. 4 (e), the first anisotropic conductive film 31 is pressed and heated by the first heater head H1 from the upper surface of the second semiconductor chip 22.
Then, the second bump 23 and the second electrode 12 are electrically connected to each other, and the second semiconductor chip 22 is temporarily press-bonded. At this time, the second anisotropic conductive film portion 31a protrudes from between the mounting substrate 10 and the second semiconductor chip 22 into a convex shape.

Next, as shown in FIG. 4 (f), the fluoroethylene resin tape T is interposed between the upper surface of the second semiconductor chip 20 and the heating surface of the second heater head H2. The second semiconductor chip 22 is fixed on the mounting substrate 10 by heating the upper surface of the second semiconductor chip 22 to solidify the second anisotropic conductive film 31. At this time,
The size of the second heater head H2 is sufficiently large with respect to the area of the upper surface of the second semiconductor chip 22. For example, when the distance D between the end face of the second heater head H2 and the end face of the second semiconductor chip is 1 mm or more. Therefore, the protruding second anisotropic conductive film portion 31a can be suppressed from above,
The second anisotropic conductive film portion 31a can be prevented from solidifying beyond the upper surface F of the second semiconductor chip 22.

According to the method for manufacturing an electronic circuit device according to the present embodiment, when the first anisotropic conductive film is solidified, the height of the protruding first anisotropic conductive film portion is suppressed. Therefore, it is possible to prevent the upper surface of the first semiconductor device from exceeding the upper surface of the first semiconductor device, and to prevent the mounting substrate from being tilted when it is turned upside down. In the case of mounting, it is possible to manufacture an electronic circuit device while preventing occurrence of a connection failure between the second bump and the second electrode of the mounting board.

In the method for manufacturing an electronic circuit device according to the present invention, the semiconductor device mounted on the mounting substrate may be a MOS device.
Transistor-based semiconductor devices, bipolar-based semiconductor devices,
The present invention can be applied to any semiconductor device such as a BiCMOS semiconductor device and a semiconductor device having a logic and a memory.

The method for manufacturing the electronic circuit device of the present invention is not limited to the above embodiment. For example, a heater head having a sufficiently large area with respect to the upper surface of the semiconductor chip can also be used in the temporary pressure bonding step. Further, the present invention can be applied to a case where the semiconductor chip is mounted on only one surface of the mounting substrate, and the occurrence of the inclination when the mounting substrate is turned over by the protruding anisotropic conductive film can be suppressed. . Further, a material other than gold may be used for the bump. Also, the semiconductor device to be mounted is not limited to a bare chip state, but may be a wafer level CSP.
It is also possible to mount a semiconductor device packaged by various packaging methods such as (Chip Size Package). In addition, various changes can be made without departing from the gist of the present invention.

[0045]

As described above, according to the method of manufacturing an electronic circuit device of the present invention, when the anisotropic conductive film is solidified, the height of the protruding anisotropic conductive film portion is suppressed, and It is possible to prevent the mounting board from tilting when it is turned upside down, so that bumps and mounting boards can be prevented even when mounting semiconductor devices on both sides of the mounting board. It is possible to manufacture an electronic circuit device while preventing the occurrence of connection failure between the electrodes.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view of an electronic circuit device manufactured by a method of manufacturing an electronic circuit device according to an embodiment, and FIG. 1B is an enlarged view of a connection portion between a bump and an electrode. FIG.

FIGS. 2A and 2B are cross-sectional views illustrating a manufacturing process of a method for manufacturing an electronic circuit device according to the present embodiment, wherein FIG. 2A is a diagram up to a mounting process of a first semiconductor chip, and FIG. Up to the temporary bonding step of the semiconductor chip.

FIG. 3 is a cross-sectional view showing a step subsequent to that of FIG. 2; FIG. 3 (c) shows a step until solidification of a first anisotropic conductive film, and FIG. The process is shown.

FIG. 4 is a cross-sectional view showing a step that follows the step shown in FIG. 3;
(F) shows the process up to the step of solidifying the second anisotropic conductive film.

FIG. 5A is a cross-sectional view of an electronic circuit device manufactured by a method of manufacturing an electronic circuit device according to a conventional example,
FIG. 5B is an enlarged cross-sectional view of a connection portion between the bump and the electrode.

6A and 6B are cross-sectional views illustrating a manufacturing process of a method of manufacturing an electronic circuit device according to a conventional example, in which FIG. 6A illustrates up to a step of mounting a first semiconductor chip, and FIG. The steps up to the step of temporarily bonding a semiconductor chip are shown.

7 is a cross-sectional view showing a step subsequent to that of FIG. 6, wherein (c) shows the step of solidifying the first anisotropic conductive film, and (d) shows the mounting of the second semiconductor chip. The process is shown.

8 is a cross-sectional view showing a step that follows the step shown in FIG. 7; FIG.
(F) shows the process up to the step of solidifying the second anisotropic conductive film.

FIG. 9 is a cross-sectional view for explaining a problem in a method of manufacturing an electronic circuit device according to a conventional example, and FIG.
(B) shows up to the step of solidifying the anisotropic conductive film, and (b) shows the step of mounting the second semiconductor chip.

FIG. 10 is a cross-sectional view showing up to the step of solidifying the second anisotropic conductive film following FIG. 9;

[Explanation of symbols]

10 mounting board, 11 first electrode, 12 second electrode, 20 first semiconductor chip, 21 first bump,
22 ... second semiconductor chip, 23 ... second bump, 30
... First anisotropic conductive film, 30a.
, A second anisotropic conductive film, 31a, a protruding second anisotropic conductive film, B, conductive balls, F, upper surface of a semiconductor chip, H,
Heater head, H1 ... first heater head, H2 ... second
Heater head, P: base, S: inclination, T: fluoroethylene resin tape, X: poor connection.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shigeki Kamei 3319, Ohara, Kunisaki-cho, Higashikoku-gun, Oita Prefecture Inside Sony Oita Corporation (72) Inventor Hirotaka Kobayashi 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Kyoko Kiriya 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation (72) Inventor Toshiki Koyama 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Soni F term in reference (reference) 5E319 AB05 BB16 CC12 5F044 LL09 RR03

Claims (16)

[Claims] 1. A method of manufacturing an electronic circuit device, comprising: mounting a semiconductor device having a bump formed so as to be connected to a circuit pattern of a semiconductor chip on at least one surface of a mounting substrate on which an electrode is formed. A step of holding the mounting substrate on a base with one surface of the mounting substrate as an upper surface, a step of providing an anisotropic conductive film on the electrode on the one surface, Positioning the semiconductor device on the anisotropic conductive film, and pressing from above the semiconductor device, the bump and the electrode through the anisotropic conductive film Electrically connecting, while suppressing from above the anisotropic conductive film portion protruding from between the mounting substrate and the semiconductor device so as not to exceed the height of the upper surface of the semiconductor device. Method of manufacturing an electronic circuit device and a step of fixing was heated from the top surface to solidify the anisotropic conductive film above the semiconductor device of the semiconductor device. 2. The step of heating the upper surface of the semiconductor device to solidify the anisotropic conductive film and fixing the semiconductor device, wherein the anisotropic conductive film at least protrudes beyond the area of the upper surface of the semiconductor device. 2. The method of manufacturing an electronic circuit device according to claim 1, wherein the heating is performed from the upper surface of the semiconductor device while suppressing the protruding anisotropic conductive film portion by a heating means having a heating surface that is wider by the area of the conductive film portion. 3. The method for manufacturing an electronic circuit device according to claim 2, wherein said heating means has a heating surface having a heating surface wider by at least 1 mm from an end face of said semiconductor device. 4. A step of heating the upper surface of the semiconductor device to solidify the anisotropic conductive film and fixing the semiconductor device, wherein the step of heating the upper surface of the semiconductor device and the heating surface of the heating means is performed. 3. The method for manufacturing an electronic circuit device according to claim 2, wherein the heating is performed with a fluoroethylene resin tape interposed therebetween. 5. The method for manufacturing an electronic circuit device according to claim 1, wherein the step of electrically connecting the bumps and the electrodes is a temporary pressure bonding step of pressing and heating the upper surface of the semiconductor device. 6. The method for manufacturing an electronic circuit device according to claim 1, wherein a flexible substrate is used as said mounting substrate. 7. A mounting substrate having electrodes formed on a first semiconductor device and a second semiconductor device having substantially the same shape and having bumps formed so as to be connected to a circuit pattern of a semiconductor chip. A method of manufacturing an electronic circuit device mounted on a first surface and a second surface, respectively, wherein the first surface of the mounting substrate on which the first electrode is formed is an upper surface, and the mounting substrate is mounted on a base. Holding on the first surface, providing a first anisotropic conductive film on the first electrode on the first surface, and providing a first bump formed on a first semiconductor device with the first bump. 1
Positioning the first semiconductor device on the first anisotropic conductive film, and pressing the upper surface of the first semiconductor device to form the first semiconductor device. A step of electrically connecting the first bump and the first electrode via an anisotropic conductive film; and a step of electrically connecting the first anisotropic element protruding from between the mounting substrate and the first semiconductor device. The first conductive film is heated from the upper surface of the first semiconductor device while holding the conductive film portion from above so as not to exceed the height of the upper surface of the first semiconductor device.
Solidifying the anisotropic conductive film to fix the first semiconductor device; turning the mounting substrate upside down so that the first semiconductor device side is the lower surface, and the second electrode of the mounting substrate is formed. Holding the mounting substrate on a base with the second surface thus set as the upper surface; and, on the second surface, a surface facing the first anisotropic conductive film as viewed from the mounting substrate. In a symmetrical position,
Providing a second anisotropic conductive film on the second electrode; forming a second anisotropic conductive film on the second semiconductor device at a position that is plane-symmetric with respect to the first semiconductor device when viewed from the mounting substrate; The second
Positioning the bump and the second electrode, placing the second semiconductor device on the second anisotropic conductive film, and applying pressure from the upper surface of the second semiconductor device. Electrically connecting the second bump and the second electrode via the second anisotropic conductive film, and protruding from between the mounting substrate and the second semiconductor device. The second anisotropic conductive film is heated from the upper surface of the second semiconductor device while being suppressed from above so that the second anisotropic conductive film portion does not exceed the height of the upper surface of the second semiconductor device.
Solidifying the anisotropic conductive film and fixing the second semiconductor device. 8. The step of heating the upper surface of the first semiconductor device to solidify the first anisotropic conductive film and fixing the first semiconductor device, The heating means having a heating surface wider by at least the area of the protruding first anisotropic conductive film portion than the area of the upper surface, while suppressing the protruding first anisotropic conductive film portion, The method for manufacturing an electronic circuit device according to claim 7, wherein heating is performed from an upper surface of the semiconductor device. 9. The heating means may include at least the first
9. The method for manufacturing an electronic circuit device according to claim 8, wherein a heating means having a heating surface wider than the end face of the semiconductor device by 1 mm or more is used. 10. The first anisotropic conductive film is heated from the upper surface of the first semiconductor device to solidify the first anisotropic conductive film.
9. The method of fixing a semiconductor device according to claim 8, wherein the heating is performed by interposing a fluoroethylene resin tape between an upper surface of the first semiconductor device and a heating surface of the heating means.
3. The method for manufacturing an electronic circuit device according to claim 1. 11. The second anisotropic conductive film is heated from the upper surface of the second semiconductor device to solidify the second anisotropic conductive film.
In the step of fixing the semiconductor device, the protruding portion is heated by a heating means having a heating surface which is at least larger than the area of the upper surface of the second semiconductor device by an area of the protruding second anisotropic conductive film portion. 8. The method of manufacturing an electronic circuit device according to claim 7, wherein the heating is performed from the upper surface of the second semiconductor device while suppressing the second anisotropic conductive film portion. 12. The method of manufacturing an electronic circuit device according to claim 11, wherein a heating means having a heating surface at least 1 mm wider than an end face of said second semiconductor device is used as said heating means. 13. The second anisotropic conductive film is heated from the upper surface of said second semiconductor device to solidify said second anisotropic conductive film.
2. The step of fixing the semiconductor device according to claim 1, wherein the heating is performed by interposing a fluoroethylene resin tape between an upper surface of the second semiconductor device and a heating surface of the heating means.
2. The method for manufacturing an electronic circuit device according to item 1. 14. The method according to claim 7, wherein the step of electrically connecting the first bump and the first electrode is a temporary pressure bonding step of pressing and heating the upper surface of the first semiconductor device. Of manufacturing an electronic circuit device. 15. The method according to claim 7, wherein the step of electrically connecting the second bump and the second electrode is a temporary pressure bonding step of pressing and heating the upper surface of the second semiconductor device. Of manufacturing an electronic circuit device. 16. The method according to claim 7, wherein a flexible substrate is used as the mounting substrate.