JP2002141628A - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JP2002141628A JP2002141628A JP2000331617A JP2000331617A JP2002141628A JP 2002141628 A JP2002141628 A JP 2002141628A JP 2000331617 A JP2000331617 A JP 2000331617A JP 2000331617 A JP2000331617 A JP 2000331617A JP 2002141628 A JP2002141628 A JP 2002141628A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- wiring board
- layer
- resin
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
(57)【要約】
【課題】 貫通導体間で金属イオンによるマイグレーシ
ョンが発生し、貫通孔の間隔を300μm以下にできな
い。
【解決手段】 ガラス繊維基材Aに有機樹脂を含浸させ
て成る複数の絶縁層11a〜1dと、この絶縁層1a〜1dの表
面および層間に配設された回路導体層2と、絶縁層1a〜
1dに穿設された貫通孔3の内壁に形成され、この内壁に
露出したガラス繊維基材Aの端部を被覆する樹脂層5
と、貫通孔3の内部に充填され、上下に位置する回路導
体層2間を電気的に接続する貫通導体4とを具備して成
る配線基板6であって、樹脂層5は、貫通孔3の深さの
2分の1の部位を中心として深さ方向に±40%の領域内
で最大厚みを有することを特徴とする配線基板6であ
る。貫通導体4間の金属イオンの移動を有効に防止で
き、イオンマイグレーションが発生することがない。
(57) [Summary] [Problem] Migration by metal ions occurs between through conductors, and the distance between through holes cannot be reduced to 300 μm or less. SOLUTION: A plurality of insulating layers 11a to 1d formed by impregnating a glass fiber base material A with an organic resin, a circuit conductor layer 2 disposed on the surfaces of the insulating layers 1a to 1d and between the layers, and an insulating layer 1a. ~
A resin layer 5 formed on the inner wall of the through hole 3 formed in 1d and covering the end of the glass fiber base material A exposed on the inner wall.
And a through conductor 4 filled in the through hole 3 and electrically connecting the upper and lower circuit conductor layers 2. The resin layer 5 includes the through hole 3. A wiring board 6 having a maximum thickness within a region of ± 40% in the depth direction with a half of the depth as a center. Movement of metal ions between the penetrating conductors 4 can be effectively prevented, and ion migration does not occur.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、スーパーコンピュ
ータやネットワークコンピュータ・携帯電話等の移動体
通信機器に使用される小型・高密度の配線基板に関し、
特に耐イオンマイグレーション性に優れた配線基板に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small and high-density wiring board used for mobile communication devices such as supercomputers, network computers and mobile phones.
In particular, the present invention relates to a wiring board having excellent ion migration resistance.
【0002】[0002]
【従来の技術】従来、配線基板、例えば半導体素子を収
容する半導体素子収納用パッケージに使用される配線基
板は、酸化アルミニウム質焼結体等のセラミックスから
成り、その上面中央部に半導体素子の搭載部を有する絶
縁基体と、その絶縁基体の搭載部から下面にかけて導出
されたタングステン・モリブデン・マンガン等の高融点
金属粉末から成る回路導体層とから構成されており、絶
縁基体の搭載部に、半導体素子をガラス・樹脂・ロウ材
等の接着剤を介して接着固定するとともに半導体素子の
各電極を、例えばボンディングワイヤ等の電気的接続手
段を介して回路導体層に電気的に接続し、しかる後、絶
縁基体の上面に、金属やセラミックス等から成る凹状の
蓋体を絶縁基体の搭載部を塞ぐようにしてガラス・樹脂
・ロウ材等の封止部材を介して接合させ、絶縁基体と蓋
体とから成る容器内部に半導体素子を気密に収容するこ
とによって製品としての半導体装置となる。2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element is made of ceramics such as an aluminum oxide sintered body, and a semiconductor element is mounted on a central portion of an upper surface thereof. And a circuit conductor layer made of a refractory metal powder such as tungsten, molybdenum, or manganese that is led out from the mounting portion of the insulating base to the lower surface. The element is bonded and fixed via an adhesive such as glass, resin, brazing material, etc., and each electrode of the semiconductor element is electrically connected to a circuit conductor layer via an electrical connection means such as a bonding wire, and thereafter, On the upper surface of the insulating substrate, a concave lid made of metal, ceramics, or the like is sealed with glass, resin, brazing material, or the like so as to cover the mounting portion of the insulating substrate. Is bonded through the wood, the semiconductor device as a product by housing the semiconductor element hermetically in the container interior made of an insulating base and the lid.
【0003】近年、半導体素子の小型化・高密度化等の
急激な進歩に伴い、半導体素子を搭載する配線基板も回
路導体層の高密度化の必要性が生じてきた。[0003] In recent years, with the rapid progress of miniaturization and high density of semiconductor elements, it has become necessary to increase the density of circuit conductor layers in wiring boards on which semiconductor elements are mounted.
【0004】しかしながら、従来の配線基板は、それを
構成する絶縁基体が比誘電率10程度の酸化アルミニウ
ム質焼結体等のセラミックスから成るために、回路導体
層を高密度化してその間隔を狭くすると信号配線間の電
気的な結合が大きくなり、クロストークノイズが増大し
てしまい、その結果、半導体素子の小型化・高密度化に
対応出来ないという問題点を有していた。However, in the conventional wiring board, since the insulating base constituting the wiring board is made of ceramics such as an aluminum oxide sintered body having a relative dielectric constant of about 10, the circuit conductor layers are densified to reduce the spacing therebetween. Then, the electrical coupling between the signal wirings increases, and the crosstalk noise increases. As a result, there is a problem that it is not possible to cope with miniaturization and high density of the semiconductor element.
【0005】そこで、このような問題点を解決するため
に、最近では比誘電率が10程度の酸化アルミニウム質
焼結体等のセラミックスに代えて、例えば比誘電率が3
〜5と比較的小さいエポキシ樹脂・フェノール樹脂等の
熱硬化性樹脂とガラス繊維やアラミド繊維等の織布との
複合材からなる絶縁層の表面に低抵抗金属である銅等の
金属箔から成る回路導体層を形成した、いわゆるプリン
ト配線基板が、各種配線基板や半導体素子収納用パッケ
ージ等に使用されるようになってきている。In order to solve such a problem, recently, instead of ceramics such as an aluminum oxide sintered body having a relative dielectric constant of about 10, for example, a dielectric constant of 3 is used.
A metal foil such as copper, which is a low-resistance metal, is formed on the surface of an insulating layer made of a composite material of a thermosetting resin such as epoxy resin and phenol resin and a woven fabric such as glass fiber and aramid fiber which are relatively small. A so-called printed wiring board on which a circuit conductor layer is formed has been used for various wiring boards, packages for housing semiconductor elements, and the like.
【0006】このようなプリント配線基板は、その表面
に回路導体層が、絶縁層の表面に銅箔を接着した後これ
をエッチングして配線導体を形成するエッチング法や配
線導体の形状に形成された銅箔を転写する転写法、ある
いは絶縁層の表面にめっきによって配線導体を形成する
めっき法等を採用することにより被着形成されている。In such a printed wiring board, a circuit conductor layer is formed on the surface thereof, and a copper foil is adhered to the surface of the insulating layer and then etched to form a wiring conductor. It is formed by applying a transfer method of transferring a copper foil, or a plating method of forming a wiring conductor on the surface of an insulating layer by plating.
【0007】さらに、このプリント配線基板は、その高
密度化に伴い複数の絶縁層を積層した絶縁基板を用いる
とともに各絶縁層表面に回路導体層を形成し、これらの
回路導体層間を絶縁層に形成した貫通導体によって電気
的に接続することも行われている。このような貫通導体
は、絶縁基板を構成する絶縁層の所定の箇所にドリル等
で貫通孔を開けた後に、めっき法を採用して銅等の金属
を貫通孔内壁に被着したり、スクリーン印刷法を採用し
て銅等から成るペーストを貫通孔内部に埋入することに
より形成されている。In addition, this printed wiring board uses an insulating substrate in which a plurality of insulating layers are laminated in accordance with the increase in density thereof, and forms a circuit conductor layer on the surface of each insulating layer. Electrical connection is also performed by the formed through conductor. Such a through conductor is formed by drilling a through hole in a predetermined portion of an insulating layer constituting an insulating substrate with a drill or the like, and then applying a metal such as copper to the inner wall of the through hole by adopting a plating method or a screen. It is formed by embedding a paste made of copper or the like in the through hole by employing a printing method.
【0008】しかしながら、上記のプリント配線基板
は、貫通孔の内壁面に絶縁層に含有されるガラス繊維等
の繊維基材の端部が露出するために、高温・高湿度中で
電圧を印加する高加速度試験を行うと、貫通導体を形成
する金属がイオン化するとともに金属イオンが繊維基材
と樹脂との界面を容易に移動してしまうイオンマイグレ
ーションが発生し、隣接する貫通導体間での絶縁抵抗の
低下・短絡等の不良が発生してしまい、このような貫通
導体間のマイグレーションを防ぐためには貫通導体間の
間隔を300μm以上と大きいものにする必要があり、配
線基板の高密度化ができないという問題点を有してい
た。However, in the above printed wiring board, a voltage is applied at high temperature and high humidity because the end of the fiber base material such as glass fiber contained in the insulating layer is exposed on the inner wall surface of the through hole. When a high acceleration test is performed, the metal forming the through conductor is ionized and metal ions easily migrate at the interface between the fiber base material and the resin, causing ion migration, and the insulation resistance between the adjacent through conductors is increased. In order to prevent such migration between the penetrating conductors, it is necessary to make the distance between the penetrating conductors as large as 300 μm or more, and it is not possible to increase the density of the wiring board. There was a problem that.
【0009】このような問題点を解決するために、貫通
孔を形成する際に、隣接する両者間を接続する繊維基材
が存在しない様に貫通孔を配置し、イオンマイグレーシ
ョンを防止する方法が提案されている(特開平8-139424
号公報)。In order to solve such a problem, there has been proposed a method for preventing the ion migration by forming the through holes such that there is no fiber base material connecting the adjacent two when forming the through holes. It has been proposed (Japanese Patent Laid-Open No. 8-139424).
No.).
【0010】しかしながら、この方法は、配線設計を行
う際に貫通孔を任意の位置に配置することが出来ず、配
線設計的な制約を受けるという問題点を有していた。However, this method has a problem that the through-hole cannot be arranged at an arbitrary position when performing wiring design, and there is a problem that wiring design is restricted.
【0011】そこで、貫通孔の内壁を樹脂で覆い、繊維
基材の端部と貫通導体との接触を防止し、イオンマイグ
レーションを防止する方法が提案されている(特開平11
-87869号公報)。Therefore, a method has been proposed in which the inner wall of the through hole is covered with a resin to prevent contact between the end of the fiber base material and the through conductor, thereby preventing ion migration (Japanese Patent Laid-Open No. Hei 11 (1999)).
-87869).
【0012】[0012]
【発明が解決しようとする課題】しかしながら、貫通孔
の内壁を樹脂で覆い、繊維基材の端部と貫通導体との接
触を防止し、イオンマイグレーションを防止する方法
は、貫通孔の孔径を小径化することで配線基板を高密度
化しようとした場合に、貫通導体と回路導体層との接続
面積が減少することにより両者の接続強度が低下して接
続信頼性が低下してしまうという問題点を有していた。However, a method of covering the inner wall of the through hole with a resin to prevent the end of the fiber base from contacting with the through conductor and to prevent ion migration is to reduce the diameter of the through hole by a small diameter. The problem is that when the wiring board is made to have a higher density by reducing the connection area, the connection area between the through conductor and the circuit conductor layer is reduced, so that the connection strength between the two is reduced and the connection reliability is reduced. Had.
【0013】また、貫通導体と回路導体層との接続面積
を十分なものとするために樹脂層の厚みを薄くした場
合、樹脂層が貫通導体間の金属イオンの移動を有効に防
止することができず、イオンマイグレーションを発生さ
せてしまい、その結果、貫通導体間の間隔を300μm以
下と高密度に配置することが困難であるという問題点を
有していた。When the thickness of the resin layer is reduced in order to make the connection area between the through conductor and the circuit conductor layer sufficient, the resin layer can effectively prevent the movement of metal ions between the through conductors. As a result, ion migration is generated, and as a result, there is a problem that it is difficult to arrange the through conductors at a high density of 300 μm or less.
【0014】本発明は、かかる従来技術の問題点に鑑み
案出されたものであり、その目的は、配線基板の高密度
実装化を行なう際に、貫通導体間の間隔を300μm以下
と狭ピッチ化しても、貫通導体間の良好な絶縁信頼性を
維持した信頼性の高い配線基板を提供することにある。The present invention has been made in view of the above-mentioned problems of the prior art. It is an object of the present invention to reduce the pitch between through conductors to 300 μm or less when performing high-density mounting of a wiring board. Therefore, it is an object of the present invention to provide a highly reliable wiring board which maintains good insulation reliability between through conductors.
【0015】[0015]
【課題を解決するための手段】本発明の配線基板は、ガ
ラス繊維基材に有機樹脂を含浸させて成る複数の絶縁層
と、この絶縁層の表面および層間に配設された回路導体
層と、絶縁層に穿設された貫通孔の内壁に形成され、こ
の内壁に露出したガラス繊維基材の端部を被覆する樹脂
層と、貫通孔の内部に充填され、上下に位置する回路導
体層間を電気的に接続する貫通導体とを具備して成る配
線基板であって、樹脂層は、貫通孔の深さの2分の1の
部位を中心として深さ方向に±40%の領域内で最大厚み
を有することを特徴とするものである。According to the present invention, there is provided a wiring board comprising: a plurality of insulating layers formed by impregnating a glass fiber base material with an organic resin; and a circuit conductor layer disposed on the surface of the insulating layer and between the layers. A resin layer formed on the inner wall of the through hole formed in the insulating layer and covering the end of the glass fiber base material exposed on the inner wall; and a circuit conductor layer which is filled inside the through hole and located above and below. And a through conductor electrically connecting the through hole, wherein the resin layer has an area of ± 40% in a depth direction around a half of the depth of the through hole. It has a maximum thickness.
【0016】本発明の配線基板によれば、貫通孔の内壁
に形成した樹脂層を貫通孔の深さの2分の1の部位を中
心として深さ方向に±40%の領域内で最大厚みを有する
ものとしたことから、貫通導体と回路導体層との接続面
積を大幅に小さくすることなく貫通導体間の金属イオン
の移動を有効に防止でき、その結果、イオンマイグレー
ションが発生したり貫通導体と回路導体層との接続強度
が低下してしまうことはなく、貫通導体間の間隔を300
μm以下と高密度に配置することができる。According to the wiring board of the present invention, the resin layer formed on the inner wall of the through hole has a maximum thickness within a region of ± 40% in the depth direction centered on a half of the depth of the through hole. Therefore, it is possible to effectively prevent the movement of metal ions between the through conductors without significantly reducing the connection area between the through conductors and the circuit conductor layer. The connection strength between the through conductor and the circuit conductor layer does not decrease.
It can be arranged at a high density of not more than μm.
【0017】[0017]
【発明の実施の形態】次に、本発明の配線基板を添付の
図面に基づき詳細に説明する。Next, a wiring board according to the present invention will be described in detail with reference to the accompanying drawings.
【0018】図1は、本発明の配線基板の実施の形態の
一例を示す断面図であり、図2は要部拡大断面図であ
る。これらの図において、1は絶縁基板、2は回路導体
層、3は貫通孔、4は貫通導体、5は樹脂層であり、主
にこれらで本発明の配線基板6が構成されている。ま
た、Aはガラス繊維基材である。FIG. 1 is a sectional view showing an example of an embodiment of a wiring board according to the present invention, and FIG. 2 is an enlarged sectional view of a main part. In these figures, 1 is an insulating substrate, 2 is a circuit conductor layer, 3 is a through hole, 4 is a through conductor, and 5 is a resin layer, and these mainly constitute a wiring board 6 of the present invention. A is a glass fiber base material.
【0019】絶縁基板1は、本例では4層の絶縁層1a・
1b・1c・1dが積層されて成り、その上面中央部には、半
導体素子等の電子部品(図示せず)が樹脂等の接着剤を
介して接着固定される。In this embodiment, the insulating substrate 1 has four insulating layers 1a.
An electronic component (not shown) such as a semiconductor element is adhered and fixed at the center of the upper surface thereof via an adhesive such as a resin.
【0020】絶縁基板1を構成する絶縁層1a・1b・1c・
1dは、ガラス繊維基材Aに有機樹脂を含浸させた、いわ
ゆる複合有機材料を用いて形成されている。このような
ガラス繊維基材Aは、織布や不織布として絶縁層1a・1b
・1c・1dに対して30〜70体積%の割合で含有され、有機
樹脂が硬化収縮する際の絶縁層1a・1b・1c・1dのそり・
変形等を抑制する機能を有する。また、有機樹脂は、エ
ポキシ樹脂やPPE(ポリフェニレンエーテル樹脂)・
フェノール系樹脂・トリアジン系樹脂・ポリイミド系樹
脂等の一般に配線基板に用いられる熱硬化性樹脂が用い
られ、とりわけ有機樹脂原料の形態としては、室温で液
状であることが望ましい。The insulating layers 1a, 1b, 1c,
1d is formed using a so-called composite organic material in which the glass fiber base material A is impregnated with an organic resin. Such a glass fiber base material A is used as a woven or non-woven fabric as the insulating layers 1a and 1b.
It is contained at a ratio of 30 to 70% by volume with respect to 1c and 1d, and the warpage of the insulating layers 1a, 1b, 1c, and 1d when the organic resin cures and shrinks.
It has a function of suppressing deformation and the like. The organic resin is epoxy resin or PPE (polyphenylene ether resin).
Thermosetting resins generally used for wiring boards, such as phenolic resins, triazine resins, and polyimide resins, are used. In particular, the form of the organic resin raw material is preferably liquid at room temperature.
【0021】また、絶縁層1a・1b・1c・1dは、その強度
を高めるために酸化珪素や酸化アルミニウム・窒化アル
ミニウム・炭化珪素・チタン酸カルシウム・酸化チタン
・ゼオライト・チタン酸バリウム・チタン酸ストロンチ
ウム・チタン酸カルシウム等の無機質フィラーを含有し
ている。このような無機質フィラーは、平均粒径が20μ
m以下の微粒子であることが望ましく、充填性の観点か
らは平均粒径が7μm以下の略球状の微粒子がより好ま
しい。The insulating layers 1a, 1b, 1c, 1d are made of silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, calcium titanate, titanium oxide, zeolite, barium titanate, strontium titanate in order to increase the strength. -Contains an inorganic filler such as calcium titanate. Such an inorganic filler has an average particle size of 20μ.
It is preferable that the fine particles have an average particle diameter of 7 μm or less.
【0022】なお、有機樹脂と無機質フィラーとを85:1
5〜15:85の体積%の割合で適宜配合することにより、特
に後述するレーザを用いて貫通孔3を形成する際に安定
した孔径のものを形成することができる。The organic resin and the inorganic filler were mixed at a ratio of 85: 1.
By appropriately blending at a volume ratio of 5 to 15:85, it is possible to form a through hole 3 having a stable hole diameter particularly when forming a through hole 3 using a laser described later.
【0023】このような絶縁層1a・1b・1c・1dは、例え
ば有機樹脂がエポキシ樹脂から成る場合であれば、ビス
フェノールA型エポキシ樹脂・ノボラック型エポキシ樹
脂・グリシジルエステル型エポキシ樹脂等のエポキシ樹
脂に酸化珪素等の無機質フィラー・溶剤・可塑剤・分散
剤等を添加した混合物を混練して液状ワニスを得て、こ
の液状ワニスをガラス繊維基材Aに含浸させて前駆体シ
ートを得るとともに、これらの前駆体シートを60〜100
℃の温度で30分〜24時間乾燥することにより形成され
る。なお、絶縁層1a・1b・1c・1dの厚みは自由に設定す
ることができるが、絶縁性の観点からは50μm以上、配
線基板6の薄型化の観点からは200μm以下の範囲の厚
みが好ましい。For example, when the organic resin is an epoxy resin, the insulating layers 1a, 1b, 1c, 1d are made of an epoxy resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin, a glycidyl ester type epoxy resin, or the like. A mixture obtained by adding an inorganic filler such as silicon oxide, a solvent, a plasticizer, a dispersant, and the like is kneaded to obtain a liquid varnish, and the liquid varnish is impregnated into the glass fiber base material A to obtain a precursor sheet, 60 to 100 of these precursor sheets
It is formed by drying at a temperature of ° C for 30 minutes to 24 hours. The thickness of the insulating layers 1a, 1b, 1c, 1d can be freely set, but the thickness is preferably 50 μm or more from the viewpoint of insulation, and 200 μm or less from the viewpoint of thinning the wiring board 6. .
【0024】なお、絶縁層1a・1b・1c・1dは、例えばレ
ーザで絶縁層1a・1b・1c・1dに貫通孔3を形成する際に
その穴径や形状を均一化するために、ガラス繊維基材A
を加圧しその隙間を減少させて密度を均一化したガラス
繊維基材Aに有機樹脂を含浸させて形成することも可能
である。The insulating layers 1a, 1b, 1c and 1d are made of glass, for example, in order to make the hole diameter and shape uniform when forming the through holes 3 in the insulating layers 1a, 1b, 1c and 1d by laser. Fiber base material A
Can be formed by impregnating an organic resin into the glass fiber base material A having a uniform density by reducing the gap between the glass fibers.
【0025】また、絶縁層1a・1b・1c・1dの表面には、
銅・金等の金属箔から成る回路導体層2が被着形成され
ている。The surfaces of the insulating layers 1a, 1b, 1c, 1d
A circuit conductor layer 2 made of a metal foil such as copper or gold is adhered and formed.
【0026】回路導体層2は、配線基板6に搭載される
半導体素子等の電子部品を外部電気回路の配線導体(図
示せず)に電気的に接続する機能を有し、例えば回路導
体層2の形状に形成された銅箔を転写する転写法、めっ
きによって回路導体層2を形成するめっき法等を採用す
ることにより絶縁層1a・1b・1c・1dの表面に被着形成さ
れる。The circuit conductor layer 2 has a function of electrically connecting electronic components such as semiconductor elements mounted on the wiring board 6 to wiring conductors (not shown) of an external electric circuit. By adopting a transfer method of transferring a copper foil formed in the shape of the above, a plating method of forming the circuit conductor layer 2 by plating, and the like, the insulating film is formed on the surfaces of the insulating layers 1a, 1b, 1c, and 1d.
【0027】なお、回路導体層2は、その厚みが1〜40
μm程度であり、高速の電気信号を伝達させるという観
点からは1μm以上であることが好ましく、回路導体層
2を絶縁層1a・1b・1c・1dから剥離し難い物とするため
には、40μm以下としておくことが好ましい。The circuit conductor layer 2 has a thickness of 1 to 40.
μm, and preferably 1 μm or more from the viewpoint of transmitting high-speed electrical signals. In order to make the circuit conductor layer 2 difficult to peel off from the insulating layers 1a, 1b, 1c, 1d, 40 μm is required. It is preferable to set the following.
【0028】さらに、絶縁層1a・1b・1c・1dには、直径
が50〜300μm程度の貫通孔3が形成されている。貫通
孔3は、ドリル等の機械的方法や炭酸ガスレーザやYA
Gレーザ・エキシマレーザ等の従来周知のレーザを用い
て形成され、好適には、絶縁層1a・1b・1c・1dの材料に
依存せず微細加工ができるとともに貫通孔3の孔径を50
〜300μmの範囲で自由に形成でき、かつ加工速度の速
い炭酸ガスレーザを用いて形成されることが好ましい。Further, in the insulating layers 1a, 1b, 1c, 1d, through holes 3 having a diameter of about 50 to 300 μm are formed. The through hole 3 is formed by a mechanical method such as a drill, a carbon dioxide gas laser, or a YA.
It is formed by using a conventionally known laser such as a G laser or an excimer laser. Preferably, fine processing can be performed independently of the material of the insulating layers 1a, 1b, 1c, and 1d, and the diameter of the through hole 3 can be reduced to 50%.
It is preferable to use a carbon dioxide laser that can be formed freely in the range of up to 300 μm and has a high processing speed.
【0029】貫通孔3の内壁には、貫通孔3の内壁に露
出したガラス繊維基材Aの端部を被覆して樹脂層5が形
成されている。A resin layer 5 is formed on the inner wall of the through hole 3 so as to cover the end of the glass fiber substrate A exposed on the inner wall of the through hole 3.
【0030】本発明の配線基板6においては、樹脂層5
を貫通孔3の深さの2分の1の部位を中心として±40%
の領域内で最大厚みを有するものとすることが重要であ
る。In the wiring board 6 of the present invention, the resin layer 5
± 40% centered on half the depth of through hole 3
It is important to have the maximum thickness in the region of the above.
【0031】本発明の配線基板6では、貫通孔3の内壁
に形成された樹脂層5を貫通孔3の深さの2分の1の部
位を中心として±40%の領域内で最大厚みを有するもの
としたことから、貫通孔3の内壁に形成した樹脂層5を
貫通孔3の深さの2分の1の部位を中心として深さ方向
に±40%の領域内で最大厚みを有するものとしたことか
ら、貫通導体4と回路導体層2との接続面積を大幅に小
さくすることなく貫通導体4間の金属イオンの移動を有
効に防止でき、その結果、イオンマイグレーションが発
生したり貫通導体4と回路導体層2との接続強度が低下
してしまうことはなく、貫通導体4間の間隔を300μm
以下と高密度に配置することができる。In the wiring board 6 of the present invention, the resin layer 5 formed on the inner wall of the through-hole 3 has a maximum thickness within a range of ± 40% around a half of the depth of the through-hole 3. As a result, the resin layer 5 formed on the inner wall of the through-hole 3 has a maximum thickness within a range of ± 40% in the depth direction around a half of the depth of the through-hole 3. As a result, the movement of metal ions between the through conductors 4 can be effectively prevented without greatly reducing the connection area between the through conductor 4 and the circuit conductor layer 2, and as a result, ion migration occurs or penetration occurs. The connection strength between the conductor 4 and the circuit conductor layer 2 is not reduced, and the distance between the through conductors 4 is 300 μm.
It can be arranged with high density as follows.
【0032】貫通孔3の内壁に形成した樹脂層5の最大
厚みは、5〜20μmの範囲が望ましく、5μm未満では
樹脂層5が貫通導体4間の金属イオンの移動を有効に防
止することが困難になる傾向があり、また、20μmを超
えると、近年貫通孔3の孔径が100μm程度以下に小径
化されており、貫通孔3内の空隙が狭くなり貫通導体4
を形成する際に充填不良が起こりやすく、貫通導体4の
抵抗値の増加や断線を生じ易くなる傾向がある。従っ
て、樹脂層5の最大厚みは5〜20μmの範囲が好まし
い。The maximum thickness of the resin layer 5 formed on the inner wall of the through hole 3 is desirably in the range of 5 to 20 μm, and if it is less than 5 μm, the resin layer 5 can effectively prevent the movement of metal ions between the through conductors 4. When the diameter exceeds 20 μm, the diameter of the through-hole 3 is reduced to about 100 μm or less in recent years, and the gap in the through-hole 3 is narrowed and the through-conductor 4
When forming the via, poor filling is likely to occur, and the resistance value of the through conductor 4 tends to increase and disconnection tends to occur. Therefore, the maximum thickness of the resin layer 5 is preferably in the range of 5 to 20 μm.
【0033】なお、樹脂層5が貫通孔3の深さの2分の
1の部位を中心として±40%の領域外で最大厚みを有す
る場合、貫通導体4と回路導体層2との接続面積が小さ
なものとなり、その結果、両者の接続強度が低下して接
続信頼性が低下する傾向があり、また、樹脂層5が貫通
導体4間の金属イオンの移動を有効に防止することが困
難になる傾向がある。従って、樹脂層5は、貫通孔3の
深さの2分の1の部位を中心として±40%の領域で最大
厚みを有することが好ましい。When the resin layer 5 has a maximum thickness outside a range of ± 40% around a half of the depth of the through hole 3, the connection area between the through conductor 4 and the circuit conductor layer 2 is increased. Becomes small, and as a result, the connection strength between the two tends to decrease, and the connection reliability tends to decrease. In addition, it is difficult for the resin layer 5 to effectively prevent the movement of metal ions between the through conductors 4. Tend to be. Therefore, it is preferable that the resin layer 5 has a maximum thickness in a range of ± 40% around a half of the depth of the through hole 3.
【0034】このような樹脂層5は、以下に示す方法に
より製作される。The resin layer 5 is manufactured by the following method.
【0035】まず、絶縁層1a・1b・1c・1dの所定の位置
に、例えばドリル等を用いて貫通孔3を形成した後、絶
縁層1a・1b・1c・1dの表裏面の貫通導体3以外の領域に
マスキングを行い、しかる後、絶縁層1a・1b・1c・1dを
液状の樹脂浴中に浸漬して貫通孔3に樹脂を充填する。First, through holes 3 are formed at predetermined positions of the insulating layers 1a, 1b, 1c, 1d by using, for example, a drill or the like, and then the through conductors 3 on the front and back surfaces of the insulating layers 1a, 1b, 1c, 1d are formed. The other areas are masked, and then the insulating layers 1a, 1b, 1c, 1d are immersed in a liquid resin bath to fill the through holes 3 with resin.
【0036】なお、この樹脂に、耐マイグレーション性
を向上させるために酸化珪素・酸化アルミニウム等の無
機フィラー等の充填材を含有させてもよい。また、貫通
孔3をあらかじめ絶縁層1a・1b・1c・1dの表裏面にマス
キングを行った後に穿設することにより、絶縁層1a・1b
・1c・1dにマスキングする際の位置合わせが不要とな
り、製造工程の簡略化が可能となる。The resin may contain a filler such as an inorganic filler such as silicon oxide or aluminum oxide in order to improve migration resistance. In addition, the through-holes 3 are formed beforehand on the front and back surfaces of the insulating layers 1a, 1b, 1c, and 1d, and then are formed.
-Positioning for masking 1c and 1d is not required, and the manufacturing process can be simplified.
【0037】次に、貫通孔3に充填した樹脂に絶縁層1a
・1b・1c・1dの表裏両面から炭酸ガスレーザを照射し
て、不要な樹脂を除去して樹脂層5を形成する。一般
に、レーザ加工法を用いて貫通した孔を形成する場合、
孔の形状はレーザ入射側の孔径が出射側の孔径に較べて
わずかに大きいテーパー状となり、レーザパルスのエネ
ルギーやパルス長あるいは焦点距離等の加工条件を調整
することによりテーパー形状をコントロールすることに
より、および絶縁層1a・1b・1c・1dの表裏両面から加工
を行うことにより貫通孔3の深さの2分の1の部位を中
心として深さ方向に±40%の領域内で樹脂層5が最大厚
みを有するように加工を行うことができる。Next, the insulating layer 1a is added to the resin filled in the through hole 3.
Irradiating carbon dioxide laser from both sides of 1b, 1c, 1d to remove unnecessary resin and form resin layer 5 Generally, when forming a through hole using a laser processing method,
The shape of the hole is such that the diameter of the hole on the laser incident side is slightly larger than the diameter of the hole on the emission side, and the taper shape is controlled by adjusting the processing conditions such as the laser pulse energy, pulse length, and focal length. And the insulating layers 1a, 1b, 1c, 1d are processed from the front and back surfaces so that the resin layer 5 is formed within a region of ± 40% in the depth direction around a half of the depth of the through hole 3. Can be processed so as to have a maximum thickness.
【0038】また、絶縁層1a・1b・1c・1dの裏面に銅等
の金属板を密着させた状態で絶縁層1a・1b・1c・1dの表
面側からレーザ加工を行うことにより、金属板で反射さ
れたレーザ光により絶縁層1a・1b・1c・1dの裏面側の孔
径を貫通孔の中央部の孔径よりも大きくすることが可能
となり、このような加工法を用いることにより貫通孔3
の深さの2分の1の部位を中心として深さ方向に±40%
の領域内で樹脂層5が最大厚みを有するように形成して
もよい。さらに、絶縁層1a・1b・1c・1dの表裏両面側よ
りドリル等の機械加工法を用いて、貫通孔3の深さの2
分の1の部位を中心として深さ方向に±40%の領域内で
最大厚みを有するように樹脂層5を形成してもよい。Further, by performing laser processing from the front side of the insulating layers 1a, 1b, 1c and 1d in a state where a metal plate such as copper is adhered to the back surface of the insulating layers 1a, 1b, 1c and 1d, It is possible to make the hole diameter on the back side of the insulating layers 1a, 1b, 1c, 1d larger than the hole diameter at the center of the through-hole by the laser light reflected by the through-hole.
± 40% in the depth direction centered on one half of the depth
May be formed so that the resin layer 5 has the maximum thickness in the region of FIG. Further, by using a machining method such as a drill from the front and back sides of the insulating layers 1a, 1b, 1c, 1d, the depth of the through hole 3 is reduced by two times.
The resin layer 5 may be formed so as to have a maximum thickness within a region of ± 40% in the depth direction with a half of the center as the center.
【0039】内壁に樹脂層5が形成された貫通孔3に
は、銅等の金属粉末を熱硬化性樹脂等の有機材料により
結合されて成る導体ペーストが充填されて形成された貫
通導体4が、従来周知のスクリーン印刷法や圧入法等を
採用することにより形成されている。In the through hole 3 in which the resin layer 5 is formed on the inner wall, a through conductor 4 formed by filling a conductive paste formed by bonding a metal powder such as copper with an organic material such as a thermosetting resin is filled. It is formed by employing a conventionally known screen printing method, press-fitting method, or the like.
【0040】このような貫通導体4となる導体ぺースト
は、銅・銀・アルミニウム・金等の金属材料の1種また
は2種以上の混合物を主体とする金属粉末を熱硬化性樹
脂や熱可塑性樹脂等の有機材料により結合することによ
り形成されており、低抵抗値という観点からは、銅また
は銅を含む混合物あるいは上記から選ばれる金属に他の
金属を被覆したものを主成分とする金属粉末を用いて形
成されることが好ましい。また、貫通導体4をより低抵
抗値化するために、半田や錫等の低融点金属の粉末を用
いることも行われる。さらに、抵抗値の調整をする目的
で、Ni−Cr合金などの高抵抗金属やこの高抵抗金属
と低抵抗金属とを合金化した金属粉末を用いることも行
われる。The conductor paste serving as the penetrating conductor 4 is made of a metal powder mainly composed of one or a mixture of two or more metal materials such as copper, silver, aluminum, and gold. It is formed by bonding with an organic material such as resin, and from the viewpoint of a low resistance value, a metal powder mainly composed of copper or a mixture containing copper or a metal selected from the above coated with another metal. It is preferable to form using. Further, in order to further reduce the resistance of the through conductor 4, a powder of a low melting point metal such as solder or tin is used. Further, for the purpose of adjusting the resistance value, a high-resistance metal such as a Ni—Cr alloy or a metal powder obtained by alloying the high-resistance metal and the low-resistance metal is also used.
【0041】貫通導体4に含有される金属粉末は、導電
性を確保するためにはその含有量は70重量%以上である
ことが好ましく、また、貫通導体4に含有される金属粉
末を熱硬化性樹脂や熱可塑性樹脂で強固に結合するには
その含有量が95%以下が好ましい。従って、貫通導体4
に含有される金属粉末は、70〜95重量%の範囲とするこ
とが好ましい。The content of the metal powder contained in the through conductor 4 is preferably not less than 70% by weight in order to secure conductivity, and the metal powder contained in the through conductor 4 is thermoset. The content is preferably 95% or less in order to bond strongly with a thermoplastic resin or a thermoplastic resin. Therefore, the through conductor 4
Is preferably in the range of 70 to 95% by weight.
【0042】なお、導体ペーストの粘度をせん断速度が
100s-1の測定条件において20〜1000Pa・sの範囲が
好ましい。導体ペーストの粘度がせん断速度が100s-1
の測定条件において20Pa・s未満であると、貫通孔3
に導体ペーストを充填する際に、貫通孔3の周囲にだれ
・にじみ等を生じ易くなり、また、1000Pa・sを超え
ると導体ペーストの流動性が低下して、貫通孔3に導体
ペーストを充填することが困難となる傾向がある。従っ
て、導体ペーストの粘度はせん断速度が 100s-1の測定
条件において20〜1000Pa・sの範囲が好ましい。な
お、導体ペーストの粘度は、有機系の結合剤や溶剤を添
加することにより適宜調整することができる。It should be noted that the shear rate is determined by the viscosity of the conductive paste.
Under the measurement conditions of 100 s −1 , the range is preferably 20 to 1000 Pa · s. Conductor paste viscosity is 100s -1
If the measurement condition is less than 20 Pa · s, the penetration hole 3
When the conductive paste is filled into the through hole, it becomes easy to cause dripping, bleeding, etc. around the through-hole 3, and when it exceeds 1000 Pa · s, the fluidity of the conductive paste decreases, and the through-hole 3 is filled with the conductive paste. Tends to be difficult. Therefore, the viscosity of the conductive paste is preferably in the range of 20 to 1000 Pa · s under the measurement condition where the shear rate is 100 s −1 . The viscosity of the conductive paste can be appropriately adjusted by adding an organic binder or a solvent.
【0043】また、金属粉末は、その平均粒径が0.1〜1
5μmの範囲であることが好ましく、平均粒径が0.1μm
未満であると導体ペーストの粘度が増加して、導体ペー
ストを貫通孔3に良好に充填することが困難となる傾向
があり、15μmを超えると金属粉末を有機材料に均一に
分散させることが困難となる傾向にある。従って、導体
ぺーストに含有される金属粉末の平均粒径は0.1〜15μ
mの範囲であることが好ましい。The metal powder has an average particle size of 0.1-1.
Preferably in the range of 5μm, the average particle size is 0.1μm
If it is less than 3, the viscosity of the conductive paste increases, and it tends to be difficult to fill the through-hole 3 with the conductive paste satisfactorily. If it exceeds 15 μm, it is difficult to uniformly disperse the metal powder in the organic material. It tends to be. Therefore, the average particle size of the metal powder contained in the conductor paste is 0.1 to 15 μm.
It is preferably in the range of m.
【0044】次に、この貫通孔3に、例えばスクリーン
印刷法を用いて導体ペーストを充填して貫通導体4を形
成した後、絶縁層1a・1b・1c・1dの所定の位置にあら
かじめ転写シートに回路導体層2の形状に形成した銅箔
等の金属箔を重ねあわせて加圧することにより、回路導
体層2が絶縁層1a・1b・1c・1dの表面に被着形成され
るとともに貫通導体4と電気的に接続される。なお、貫
通導体4を形成する際に、絶縁層1a・1b・1c・1dの表面
に導体ペーストにより突出部を形成しておき、貫通導体
4と回路導体層2との接続部に導体ペーストを押し広げ
て貫通孔3の面積より広い層間接続部を形成することに
より、貫通導体4と回路導体層2との接続強度をより高
めることができる。Next, the through-hole 3 is filled with a conductive paste by using, for example, a screen printing method to form a through-conductor 4. Then, the transfer sheet is previously placed at a predetermined position of the insulating layers 1a, 1b, 1c and 1d. A metal foil such as a copper foil formed in the shape of the circuit conductor layer 2 is overlaid on the substrate and pressed, so that the circuit conductor layer 2 is formed on the surfaces of the insulating layers 1a, 1b, 1c and 1d, and the through conductor is formed. 4 is electrically connected. When the through conductor 4 is formed, projecting portions are formed on the surfaces of the insulating layers 1a, 1b, 1c, and 1d with a conductive paste, and the conductive paste is applied to the connection between the through conductor 4 and the circuit conductor layer 2. The connection strength between the through conductor 4 and the circuit conductor layer 2 can be further increased by forming the interlayer connection portion wider than the area of the through hole 3 by pushing out.
【0045】さらに、表面に必要な回路導体層2が被着
形成された絶縁層1a・1b・1c・1dを複数層重ねあわせ、
4〜6MPaの圧力を加えながら60〜200℃の温度で30分〜
24時間加熱することにより本発明の配線基板6が製作さ
れる。Further, a plurality of insulating layers 1a, 1b, 1c, 1d each having a required circuit conductor layer 2 formed on the surface thereof are superposed,
30 minutes at a temperature of 60 to 200 ° C while applying a pressure of 4 to 6 MPa
By heating for 24 hours, the wiring board 6 of the present invention is manufactured.
【0046】かくして本発明の配線基板6によれば、貫
通導体4と回路導体層2との接続面積を大幅に小さくす
ることなく貫通導体4間の金属イオンの移動を有効に防
止でき、その結果、イオンマイグレーションが発生した
り貫通導体4と回路導体層2との接続強度が低下してし
まうことはなく、貫通導体4間の間隔を300μm以下と
高密度に配置することができる配線基板6とすることが
できる。Thus, according to the wiring board 6 of the present invention, the movement of metal ions between the penetrating conductors 4 can be effectively prevented without greatly reducing the connection area between the penetrating conductor 4 and the circuit conductor layer 2, and as a result, In addition, there is no occurrence of ion migration or a decrease in the connection strength between the through conductor 4 and the circuit conductor layer 2, and the wiring board 6 can be arranged at a high density of 300 μm or less between the through conductors 4. can do.
【0047】なお、本発明の配線基板6は上述の実施例
に限定されるものではなく、本発明の要旨を逸脱しない
範囲であれば種々の変更が可能である。例えば、1層〜
3層、あるいは5層以上の絶縁層を積層して絶縁基板1
を形成してもよい。また、絶縁基板1の耐湿性向上のた
めに絶縁基板1の最外層を無機フィラー含有樹脂で形成
してもよい。あるいは、貫通導体4を金属めっきによっ
て形成してもよい。The wiring board 6 of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, one layer
Three or five or more insulating layers are laminated to form an insulating substrate 1
May be formed. Further, the outermost layer of the insulating substrate 1 may be formed of an inorganic filler-containing resin in order to improve the moisture resistance of the insulating substrate 1. Alternatively, the through conductor 4 may be formed by metal plating.
【0048】[0048]
【実施例】本発明の配線基板の特性を評価するために、
以下のようなサンプルを作成し評価を行った。 (実施例)まず、ガラス織布に熱硬化性ポリフェニレン
エーテル(PPE)樹脂とトルエンを混合した液状ワニ
スを含浸させて乾燥し、100μmの厚みの絶縁層となる
プリプレグを複数枚作成した。なお、プリプレグは、P
PE樹脂を50体積%、ガラス織布を50体積%とした。EXAMPLES In order to evaluate the characteristics of the wiring board of the present invention,
The following samples were prepared and evaluated. (Example) First, a glass woven fabric was impregnated with a liquid varnish obtained by mixing a thermosetting polyphenylene ether (PPE) resin and toluene, and dried to prepare a plurality of prepregs each serving as an insulating layer having a thickness of 100 µm. The prepreg is P
The PE resin was 50% by volume and the glass woven fabric was 50% by volume.
【0049】このプリプレグに、炭酸ガスレーザで150
μmの間隔で孔径100μmの複数の貫通孔を穿設し、し
かる後、貫通孔の内壁面に樹脂層を形成した。この時の
樹脂層は、その厚みが貫通孔の深さの2分の1の部位を
中心として±40%の領域内で最大厚みを有するとともに
最大厚みが10μmであった。次に、貫通孔に、平均粒径
が5μmの、半田粉末と銀めっきを施した銅粉末とをそ
れぞれ50重量%づつ混合した混合物にトリアリルイソシ
アネートを添加して作成した導体ペーストを、スクリー
ン印刷法を用いて充填し貫通導体を作成した。The prepreg was subjected to carbon dioxide gas laser irradiation for 150 hours.
A plurality of through holes having a hole diameter of 100 μm were formed at intervals of μm, and thereafter, a resin layer was formed on the inner wall surface of the through hole. At this time, the resin layer had a maximum thickness within a range of ± 40% around a half of the depth of the through hole and a maximum thickness of 10 μm. Next, screen-printing a conductor paste prepared by adding triallyl isocyanate to a mixture in which solder powder and silver-plated copper powder each having an average particle size of 5 μm were mixed in a weight of 50% by weight in the through holes. The through conductor was filled by using the method.
【0050】次に、ポリエチレンテレフタレート(PE
T)樹脂からなる転写シートの表面に接着剤を塗布する
とともに厚みが12μm、平均表面粗さ0.8μmの銅箔を
接着し、その後、フォトレジストを塗布し露光現像を行
ない、しかる後、転写シートを塩化第二鉄中に浸漬して
エッチングを行い回路導体層を作成した。さらに、この
回路導体層を形成した転写シートを貫通導体と回路導体
層とが電気的に接続するように絶縁層に貼り付け、絶縁
層の表面に回路導体層を転写し、しかる後、転写シート
を剥がして回路導体層を具備した絶縁層を得た。同様に
して制作した回路導体層を具備した絶縁層を4層重ねた
後、5MPaの圧力を加えながら200℃の温度で1時間
加熱して完全硬化させて評価用配線基板を作成した。 (比較例)比較例として、実施例の配線基板と同様の方
法で作成した厚みが100μmのプリプレグに孔径100μm
の複数の貫通孔を穿設するとともにこの貫通孔の内壁面
に約5μmの厚みの樹脂層を形成した。なお、隣接する
貫通導体間の距離は実施例の配線基板と同様に150μm
とした。さらに他の条件と工程は実施例の配線基板と同
様にして比較用の配線基板Aを作成した。さらにまた、
貫通孔の内壁面に約20μmの厚みの樹脂層を形成した比
較用の配線基板Bを作成した。Next, polyethylene terephthalate (PE)
T) An adhesive is applied to the surface of a transfer sheet made of a resin, and a copper foil having a thickness of 12 μm and an average surface roughness of 0.8 μm is adhered. Then, a photoresist is applied and exposed and developed. Was immersed in ferric chloride and etched to form a circuit conductor layer. Further, the transfer sheet on which the circuit conductor layer is formed is attached to the insulating layer so that the through conductor and the circuit conductor layer are electrically connected, and the circuit conductor layer is transferred onto the surface of the insulating layer. Was peeled off to obtain an insulating layer having a circuit conductor layer. After laminating four insulating layers each having a circuit conductor layer produced in the same manner, the laminate was heated at a temperature of 200 ° C. for 1 hour while applying a pressure of 5 MPa and completely cured to prepare a wiring board for evaluation. (Comparative Example) As a comparative example, a prepreg having a thickness of 100 μm and a hole diameter of 100 μm was prepared in the same manner as the wiring board of the example.
And a resin layer having a thickness of about 5 μm was formed on the inner wall surface of the through hole. The distance between adjacent through conductors was 150 μm as in the case of the wiring board of the embodiment.
And Other conditions and processes were the same as those of the wiring board of the example, to prepare a wiring board A for comparison. Furthermore,
A comparative wiring board B in which a resin layer having a thickness of about 20 μm was formed on the inner wall surface of the through hole was prepared.
【0051】信頼性試験評価用サンプルの実施例と比較
例のサンプルをそれぞれ100個用意し貫通導体の抵抗値
を測定した後、信頼性試験を行った。信頼性試験項目
は、高加速度試験(HAST)と温度サイクル試験(T
CT)で、HASTでは絶縁抵抗を測定し10×106Ω以
下の抵抗値を示す物を絶縁不良としマイグレーションを
起こしていると評価し、また、TCTでは電気導通と剥
がれ等の外観で評価を行った。Reliability Tests 100 samples of the samples for evaluation and the samples of the comparative example were prepared, and the resistance value of the through conductor was measured. Then, a reliability test was performed. The reliability test items are high acceleration test (HAST) and temperature cycle test (T
In CT), HAST measures the insulation resistance and evaluates an object with a resistance value of 10 × 10 6 Ω or less as having poor insulation and causing migration, and TCT evaluates the appearance such as electrical continuity and peeling. went.
【0052】HASTは、高加速度試験器を用い、信頼
性評価用サンプルを温度が130℃で相対湿度が85%の雰
囲気中、5.5Vの電圧を300時間印加後に絶縁性の確認を
行った。TCTは気相冷熱試験気を用い、信頼性評価用
サンプルを温度が−55℃および125℃の気相中に各30分
間放置し、これを1サイクルとして2000サイクルの条件
で行った。表1に評価結果を示す。In the HAST, using a high-acceleration tester, a sample for reliability evaluation was subjected to a voltage of 5.5 V for 300 hours in an atmosphere at a temperature of 130 ° C. and a relative humidity of 85% to confirm insulation properties. The TCT was performed using a gas phase cold test gas, and the sample for reliability evaluation was left in a gas phase at a temperature of −55 ° C. and 125 ° C. for 30 minutes each, and this was performed as one cycle under the conditions of 2000 cycles. Table 1 shows the evaluation results.
【0053】[0053]
【表1】 [Table 1]
【0054】実施例の配線基板は、マイグレーションの
発生が無くTCT後の断線率も0.0%であり良好な信頼
性を持つ配線基板であることが確認できた。これに対し
比較例の配線基板Aは、初期抵抗値は、実施例の配線基
板と比較すると10%程度低かったがマイグレーションが
65.0%発生し信頼性の低い配線基板であることが確認で
きた。配線基板Bはマイグレーションの発生は無かった
が、TCT後の断線率が25.0%と大きく信頼性の低い配
線基板であることが確認できた。なお、配線基板Bの貫
通導体と回路導体層との接続面積は、実施例の配線基板
のものと比較すると55%程度の値であった。The wiring board of the example had no migration and the disconnection rate after TCT was 0.0%, confirming that the wiring board had good reliability. On the other hand, the wiring board A of the comparative example had an initial resistance value that was lower by about 10% as compared with the wiring board of the example, but migration was low.
It was confirmed that the wiring board had a low reliability of 65.0%. Although no migration occurred in the wiring board B, it was confirmed that the disconnection rate after TCT was 25.0%, which was a large and low reliability wiring board. The connection area between the through conductor of the wiring board B and the circuit conductor layer was about 55% as compared with that of the wiring board of the example.
【0055】[0055]
【発明の効果】本発明の配線基板によれば、貫通孔の内
壁に形成した樹脂層を貫通孔の深さの2分の1の部位を
中心として深さ方向に±40%の領域内で最大厚みを有す
るものとしたことから、貫通導体と回路導体層との接続
面積を大幅に小さくすることなく貫通導体間の金属イオ
ンの移動を有効に防止でき、その結果、イオンマイグレ
ーションが発生したり貫通導体と回路導体層との接続強
度が低下してしまうことはなく、貫通導体間の間隔を30
0μm以下と高密度に配置することができる。According to the wiring board of the present invention, the resin layer formed on the inner wall of the through-hole is placed within a region of ± 40% in the depth direction around a half of the depth of the through-hole. Having the maximum thickness makes it possible to effectively prevent the migration of metal ions between the through conductors without significantly reducing the connection area between the through conductors and the circuit conductor layer. The connection strength between the through conductor and the circuit conductor layer does not decrease, and the space between the through conductors is set to 30
It can be arranged at a high density of 0 μm or less.
【図1】本発明の配線基板の実施の形態の一例を示す断
面図である。FIG. 1 is a sectional view showing an example of an embodiment of a wiring board of the present invention.
【図2】本発明の実施の形態の一例を示す要部拡大断面
図である。FIG. 2 is an enlarged sectional view of a main part showing an example of an embodiment of the present invention.
1・・・・・・・・・・・・・・・絶縁基板 1a・1b・1c・1d・・・・・・・・・絶縁層 2・・・・・・・・・・・・・・・回路導体層 3・・・・・・・・・・・・・・・貫通孔 4・・・・・・・・・・・・・・・貫通導体 5・・・・・・・・・・・・・・・樹脂層 6・・・・・・・・・・・・・・・配線基板 A・・・・・・・・・・・・・・・ガラス繊維基材 1 Insulating substrate 1a ・ 1b ・ 1c ・ 1d ・ ・ ・ ・ ・ ・ ・ ・ ・ Insulating layer 2 ・ ・ ・ ・ ・ ・.... Circuit conductor layer 3 ... Through hole 4 ... Through conductor 5 ... ······ Resin layer 6 ······· Wiring board A ····· Glass fiber base material
Claims (2)
成る複数の絶縁層と、該絶縁層の表面および層間に配設
された回路導体層と、前記絶縁層に穿設された貫通孔の
内壁に形成され、該内壁に露出した前記ガラス繊維基材
の端部を被覆する樹脂層と、前記貫通孔の内部に充填さ
れ、上下に位置する前記回路導体層間を電気的に接続す
る貫通導体とを具備して成る配線基板であって、前記樹
脂層は、前記貫通孔の深さの2分の1の部位を中心とし
て深さ方向に±40%の領域内で最大厚みを有すること
を特徴とする配線基板。1. A plurality of insulating layers formed by impregnating a glass fiber base material with an organic resin, a circuit conductor layer disposed on the surface and between layers of the insulating layer, and a through hole formed in the insulating layer. A resin layer formed on an inner wall of the glass fiber substrate and covering an end portion of the glass fiber base material exposed on the inner wall; and a through-hole filled in the through-hole and electrically connecting the circuit conductor layers located above and below. A wiring board comprising a conductor, wherein the resin layer has a maximum thickness in a range of ± 40% in a depth direction around a half of a depth of the through hole. A wiring board characterized by the above.
あることを特徴とする請求項1記載の配線基板。2. The wiring board according to claim 1, wherein the maximum thickness of the resin layer is 5 to 20 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331617A JP2002141628A (en) | 2000-10-31 | 2000-10-31 | Wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000331617A JP2002141628A (en) | 2000-10-31 | 2000-10-31 | Wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002141628A true JP2002141628A (en) | 2002-05-17 |
Family
ID=18807931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000331617A Pending JP2002141628A (en) | 2000-10-31 | 2000-10-31 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002141628A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005013653A1 (en) | 2003-07-30 | 2005-02-10 | International Business Machines Corporation | Printed-wiring board and method of producing the same |
| CN103228103A (en) * | 2012-01-27 | 2013-07-31 | 京瓷Slc技术株式会社 | Wiring board and mounting structure using the same |
| JP2017125295A (en) * | 2015-03-17 | 2017-07-20 | 株式会社東芝 | Structure |
| JPWO2020105704A1 (en) * | 2018-11-22 | 2021-09-02 | 味の素株式会社 | Magnetic paste |
-
2000
- 2000-10-31 JP JP2000331617A patent/JP2002141628A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005013653A1 (en) | 2003-07-30 | 2005-02-10 | International Business Machines Corporation | Printed-wiring board and method of producing the same |
| CN103228103A (en) * | 2012-01-27 | 2013-07-31 | 京瓷Slc技术株式会社 | Wiring board and mounting structure using the same |
| US8890001B2 (en) | 2012-01-27 | 2014-11-18 | Kyocera Slc Technologies Corporation | Wiring board and mounting structure using the same |
| JP2017125295A (en) * | 2015-03-17 | 2017-07-20 | 株式会社東芝 | Structure |
| US10099447B2 (en) | 2015-03-17 | 2018-10-16 | Kabushiki Kaisha Toshiba | Structural body and core |
| US10906266B2 (en) | 2015-03-17 | 2021-02-02 | Kabushiki Kaisha Toshiba | Structural body and core |
| JPWO2020105704A1 (en) * | 2018-11-22 | 2021-09-02 | 味の素株式会社 | Magnetic paste |
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