JP2002039053A - Method for manufacturing shape-memory alloy element - Google Patents
Method for manufacturing shape-memory alloy elementInfo
- Publication number
- JP2002039053A JP2002039053A JP2000220865A JP2000220865A JP2002039053A JP 2002039053 A JP2002039053 A JP 2002039053A JP 2000220865 A JP2000220865 A JP 2000220865A JP 2000220865 A JP2000220865 A JP 2000220865A JP 2002039053 A JP2002039053 A JP 2002039053A
- Authority
- JP
- Japan
- Prior art keywords
- memory alloy
- shape memory
- thin film
- substrate
- alloy thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 23
- 239000010409 thin film Substances 0.000 claims abstract description 81
- 230000000694 effects Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 66
- 239000002184 metal Substances 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000009466 transformation Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910004337 Ti-Ni Inorganic materials 0.000 description 3
- 229910011209 Ti—Ni Inorganic materials 0.000 description 3
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910017773 Cu-Zn-Al Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マイクロスイッチ
や半導体マイクロバルブ等のマイクロアクチュエータに
利用される形状記憶合金素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a shape memory alloy element used for a microactuator such as a microswitch or a semiconductor microvalve.
【０００２】[0002]
【従来の技術】従来、マイクロスイッチや半導体マイク
ロバルブ等のマイクロアクチュエータに利用される、形
状記憶合金薄膜と基板とが接合された構造の形状記憶合
金素子が知られている。このような構造の形状記憶合金
素子を製造する方法としては、冶具を用いて形状記憶合
金薄膜の形状を拘束した状態（例えば湾曲した状態）
で、形状記憶合金薄膜に形状記憶処理を施し、次いで、
形状記憶処理が施された形状記憶合金薄膜を例えば直線
状になるように固定した状態で、基板となる層を形状記
憶合金薄膜上に形成する方法（例えば特開平９−８８８
０４号）が知られている。2. Description of the Related Art Heretofore, there has been known a shape memory alloy element having a structure in which a shape memory alloy thin film is bonded to a substrate, which is used for a microactuator such as a microswitch or a semiconductor microvalve. As a method of manufacturing a shape memory alloy element having such a structure, a state in which the shape of the shape memory alloy thin film is constrained using a jig (for example, a curved state)
Then, the shape memory alloy thin film is subjected to shape memory processing, and then
A method in which a layer serving as a substrate is formed on a shape memory alloy thin film while the shape memory alloy thin film that has been subjected to the shape memory processing is fixed, for example, in a linear shape (for example, Japanese Patent Laid-Open No. 9-888)
No. 04) is known.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記の
冶具を用いる方法では、所望の形状の冶具を作製する必
要があるという問題や、冶具による形状の拘束につい
て、マイクロメータ等を用いて微小な位置制御を必要と
する問題があった。However, in the above-described method using a jig, the problem that it is necessary to produce a jig having a desired shape, and the constraint of the shape by the jig is determined using a micrometer or the like. There was a problem that required control.
【０００４】本発明は、上記問題点を改善するために成
されたもので、その目的とする所は、特別な冶具を使用
することなしに、形状記憶合金薄膜と基板とが接合され
た構造の形状記憶合金素子を製造することができる製造
方法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a structure in which a shape memory alloy thin film and a substrate are joined without using a special jig. It is an object of the present invention to provide a manufacturing method capable of manufacturing the shape memory alloy element of the above.
【０００５】[0005]
【課題を解決するための手段】請求項１に係る発明の形
状記憶合金薄膜の製造方法は、形状記憶合金薄膜と基板
とが接合された構造の形状記憶合金素子を製造する形状
記憶合金素子の製造方法であって、基板の表面に、この
基板とは熱膨張係数が異なる形状記憶合金薄膜を形成し
た後、形状記憶合金薄膜に形状記憶させるに十分な熱を
加えることにより、形状記憶合金薄膜と前記基板の熱膨
張係数が異なることに基づくバイメタル効果によって形
成される弧状形状を形状記憶合金薄膜に記憶させること
を特徴とする形状記憶合金薄膜の製造方法である。According to a first aspect of the present invention, there is provided a method of manufacturing a shape memory alloy thin film, wherein the shape memory alloy thin film and the substrate are joined together. A manufacturing method, comprising: forming a shape memory alloy thin film having a different coefficient of thermal expansion from the substrate on the surface of the substrate, and then applying sufficient heat to cause the shape memory alloy thin film to shape-memory, thereby forming the shape memory alloy thin film. A shape memory alloy thin film, wherein an arc shape formed by a bimetal effect based on a difference in thermal expansion coefficient between the substrate and the substrate is stored in the shape memory alloy thin film.
【０００６】この請求項１に係る発明では、形状記憶合
金薄膜と基板の熱膨張係数が異なることに基づくバイメ
タル効果によって形成される弧状形状を形状記憶合金薄
膜に記憶させるので、特別な冶具を使用することなし
に、形状記憶合金薄膜と基板とが接合された構造の形状
記憶合金素子を製造することができる。ここでいう基板
（請求項２における基板も含む）とは、例えばＳｉ基板
や、ＧａＡｓ基板のような半導体基板を加工して得られ
る薄い厚みの基板を意味していて、その厚みについて
は、形状記憶合金素子として機能するには５〜５０μｍ
程度の厚みであることが好ましい。なお、形状記憶合金
素子として機能する部分の基板については、厚みが４０
０〜５００μｍの半導体ウエハを用いて、例えばエッチ
ング加工を施して形状記憶合金素子として機能する部分
のみを厚さ５〜５０μｍ程度に加工したものが例示でき
る。そして、例えばマイクロリレーの場合には、この形
状記憶合金素子として機能する部分は、形状記憶合金の
変体点（温度）以上と、以下では形状が変化するので、
ＯＮ・ＯＦＦのための駆動部としての動作ができる。According to the first aspect of the invention, a special jig is used because the shape of the arc formed by the bimetal effect based on the difference in thermal expansion coefficient between the shape memory alloy thin film and the substrate is stored in the shape memory alloy thin film. Without doing this, it is possible to manufacture a shape memory alloy element having a structure in which a shape memory alloy thin film and a substrate are joined. Here, the substrate (including the substrate in claim 2) means a substrate having a small thickness obtained by processing a semiconductor substrate such as a Si substrate or a GaAs substrate. 5-50μm to function as a memory alloy element
It is preferable that the thickness is about the same. The thickness of the portion of the substrate that functions as a shape memory alloy element is 40 mm.
For example, a semiconductor wafer having a thickness of about 5 to 50 μm using a semiconductor wafer having a thickness of about 0 to 500 μm and being subjected to an etching process to process only a portion functioning as a shape memory alloy element can be exemplified. For example, in the case of a micro relay, the portion functioning as the shape memory alloy element changes its shape below and above the transformation point (temperature) of the shape memory alloy.
It can operate as a drive unit for ON / OFF.
【０００７】請求項２に係る発明の形状記憶合金薄膜の
製造方法は、形状記憶合金薄膜と基板とが接合された構
造の形状記憶合金素子を製造する形状記憶合金素子の製
造方法であって、基板の表面に、形状記憶合金薄膜を形
成すると共に、この形状記憶合金薄膜の前記基板との接
合面と反対側の面に、前記基板の熱膨張係数と異なる金
属層を形成した後、形状記憶合金薄膜に形状記憶させる
に十分な熱を加えることにより、前記基板と前記金属層
の熱膨張係数が異なることに基づくバイメタル効果によ
って形成される弧状形状を形状記憶合金薄膜に記憶させ
ることを特徴とする形状記憶合金素子の製造方法であ
る。According to a second aspect of the present invention, there is provided a method of manufacturing a shape memory alloy element for manufacturing a shape memory alloy element having a structure in which a shape memory alloy thin film and a substrate are joined. Forming a shape memory alloy thin film on the surface of the substrate, and forming a metal layer having a coefficient of thermal expansion different from that of the substrate on the surface of the shape memory alloy thin film opposite to the bonding surface with the substrate. By applying sufficient heat to cause the shape memory to be applied to the alloy thin film, an arc shape formed by a bimetal effect based on a difference in thermal expansion coefficient between the substrate and the metal layer is stored in the shape memory alloy thin film. This is a method for manufacturing a shape memory alloy element.
【０００８】この請求項２に係る発明では、基板と金属
層の熱膨張係数が異なることに基づくバイメタル効果に
よって形成される弧状形状を形状記憶合金薄膜に記憶さ
せるので、特別な冶具を使用することなしに、形状記憶
合金薄膜と基板とが接合された構造の形状記憶合金素子
を製造することができる。ここでいう基板は、上記した
請求項１におけるものと同義であり、また、ここでいう
金属層とは、例えばＡｌ等の金属膜を意味していて、そ
の厚みについては特に制限はないが、バイメタル効果に
よって弧状形状を形成させるには５〜５０μｍ程度の厚
みであることが好ましい。According to the second aspect of the present invention, a special jig is used because the arc shape formed by the bimetal effect based on the difference in the thermal expansion coefficient between the substrate and the metal layer is stored in the shape memory alloy thin film. Without this, a shape memory alloy element having a structure in which a shape memory alloy thin film and a substrate are joined can be manufactured. The substrate herein has the same meaning as in claim 1 described above, and the metal layer here refers to a metal film such as Al, for example, and its thickness is not particularly limited. In order to form an arc shape by the bimetal effect, the thickness is preferably about 5 to 50 μm.
【０００９】請求項３に係る発明の形状記憶合金薄膜の
製造方法は、形状記憶合金薄膜と金属層との間に、樹脂
層を設けることを特徴とする請求項２記載の形状記憶合
金素子の製造方法である。この樹脂層は、形状記憶合金
薄膜への金属層の金属の拡散防止の働きをするので、形
状記憶合金薄膜が劣化することが防止される。According to a third aspect of the present invention, in the method of manufacturing a shape memory alloy thin film, a resin layer is provided between the shape memory alloy thin film and the metal layer. It is a manufacturing method. The resin layer functions to prevent diffusion of the metal of the metal layer into the shape memory alloy thin film, so that the shape memory alloy thin film is prevented from being deteriorated.
【００１０】請求項４に係る発明の形状記憶合金薄膜の
製造方法は、基板の厚みを所定の区間で変えることで、
バイメタル効果によって形成される弧状形状の曲率を制
御するようにしたことを特徴とする請求項１乃至請求項
３の何れかに記載の形状記憶合金素子の製造方法であ
る。According to a fourth aspect of the present invention, there is provided a method of manufacturing a shape memory alloy thin film, wherein the thickness of the substrate is changed in a predetermined section.
4. The method of manufacturing a shape memory alloy element according to claim 1, wherein a curvature of an arc shape formed by a bimetal effect is controlled.
【００１１】請求項５係る発明の形状記憶合金薄膜の製
造方法は、基板内にヒータを内蔵させて、前記基板の発
熱によって、形状記憶合金薄膜に形状記憶させるに十分
な熱を加えるようにしていることを特徴とする請求項１
乃至請求項４の何れかに記載の形状記憶合金素子の製造
方法である。According to a fifth aspect of the present invention, there is provided a method for manufacturing a shape memory alloy thin film, wherein a heater is incorporated in a substrate, and sufficient heat is applied to the shape memory alloy thin film by heat generation of the substrate. 2. The method according to claim 1, wherein
A method of manufacturing a shape memory alloy element according to any one of claims 4 to 4.
【００１２】[0012]
【発明の実施の形態】この発明の形状記憶合金薄膜を構
成する合金は、Ｔｉ−Ｎｉ合金の他、Ｃｕ−Ｚｎ−Ａｌ
合金等の各種合金を利用可能である。また、その形成方
法は、通常の薄膜形成方法を利用可能なものであり、ス
パッタリングの他、適宜他の真空蒸着等の方法を利用可
能である。そして、形状記憶合金薄膜の厚さについては
特に限定はないが、１〜１５μｍ程度であることが、マ
イクロスイッチや半導体マイクロバルブ等のマイクロア
クチュエータに利用する形状記憶合金素子とするには好
ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The alloy constituting the shape memory alloy thin film of the present invention is Cu-Zn-Al in addition to Ti-Ni alloy.
Various alloys such as alloys can be used. In addition, as a method for forming the thin film, a normal thin film forming method can be used. In addition to sputtering, other methods such as vacuum deposition can be used as appropriate. The thickness of the shape memory alloy thin film is not particularly limited, but is preferably about 1 to 15 μm for a shape memory alloy element used for a microactuator such as a microswitch or a semiconductor microvalve.
【００１３】以下に本発明の実施の形態を図面に基づい
て説明する。An embodiment of the present invention will be described below with reference to the drawings.
【００１４】図１は第１の実施の形態を示す概略断面図
であり、（ａ）、（ｂ）は各工程毎の状態を示してい
る。まず、図１（ａ）に示すように、所定形状に加工し
た厚さが２０μｍのＳｉ基板１を準備し、このＳｉ基板
１の一方の表面に、スパッタ装置を用いて、スパッタリ
ングによりＴｉ−Ｎｉ合金からなる形状記憶合金薄膜２
を１０μｍの厚さで形成する。次いで、弧状形状を形状
記憶合金薄膜２に記憶させるために、加熱炉等で形成し
た４００℃の雰囲気に形状記憶合金薄膜２を表面に形成
したＳｉ基板１を入れる。このとき、形状記憶合金薄膜
２とＳｉ基板１の熱膨張係数が異なることに基づくバイ
メタル効果によって図１（ｂ）に示すように、形状記憶
合金薄膜２を表面に形成したＳｉ基板１は弧状形状を形
成する。そして形状記憶合金薄膜２に形状記憶させるた
めに、例えば４００℃で６時間の形状記憶処理を行っ
て、形状記憶合金素子を完成する。なお、形状記憶処理
の条件は、形状記憶合金の種類によって適宜決定するこ
とができる。このように、第1の実施の形態では、特別
な冶具を使用することなしに、形状記憶合金薄膜と基板
とが接合された構造の形状記憶合金素子を製造すること
ができる。FIGS. 1A and 1B are schematic sectional views showing a first embodiment, and FIGS. 1A and 1B show the state of each step. First, as shown in FIG. 1A, a Si substrate 1 having a thickness of 20 μm processed into a predetermined shape is prepared, and Ti-Ni is sputtered on one surface of the Si substrate 1 by using a sputtering apparatus. Shape memory alloy thin film 2 made of alloy
Is formed with a thickness of 10 μm. Next, in order to memorize the arc shape in the shape memory alloy thin film 2, the Si substrate 1 on the surface of which the shape memory alloy thin film 2 is formed is placed in a 400 ° C. atmosphere formed by a heating furnace or the like. At this time, as shown in FIG. 1B, the Si substrate 1 having the shape memory alloy thin film 2 formed on the surface thereof has an arc shape due to the bimetal effect based on the difference in the thermal expansion coefficient between the shape memory alloy thin film 2 and the Si substrate 1. To form Then, in order to store the shape in the shape memory alloy thin film 2, for example, a shape memory process is performed at 400 ° C. for 6 hours to complete the shape memory alloy element. Note that the conditions for the shape memory processing can be appropriately determined depending on the type of the shape memory alloy. As described above, in the first embodiment, a shape memory alloy element having a structure in which the shape memory alloy thin film and the substrate are joined can be manufactured without using a special jig.
【００１５】そして、得られた形状記憶合金素子は、形
状記憶合金薄膜２の変態点以下の温度では、Ｓｉ基板１
による応力で平板に近い状態の形状となり、形状記憶合
金薄膜２の変態点以上の温度では、形状記憶合金薄膜２
に記憶させた弧状形状を形成する形状記憶合金素子とな
る。The obtained shape memory alloy element has an Si substrate 1 at a temperature lower than the transformation point of the shape memory alloy thin film 2.
At a temperature higher than the transformation point of the shape memory alloy thin film 2 at a temperature higher than the transformation point of the shape memory alloy thin film 2.
Is a shape memory alloy element that forms the arc shape stored in the memory device.
【００１６】次に、図２は第２の実施の形態を示す概略
断面図であり（ａ）、（ｂ）、（ｃ）、（ｄ）は各工程
毎の状態を示している。まず、図２（ａ）に示すよう
に、所定形状に加工した厚さが２０μｍのＳｉ基板１を
準備し、このＳｉ基板１の一方の表面に、スパッタ装置
を用いて、スパッタリングによりＴｉ−Ｎｉ合金からな
る形状記憶合金薄膜２を５μｍの厚さで形成する。次い
で、図２（ｂ）に示すように、形状記憶合金薄膜２のＳ
ｉ基板１との接合面と反対側の面に、Ｓｉ基板１の熱膨
張係数と異なる金属層としてＡｌ層３を１０μｍの厚さ
で形成する。このＡｌ層３の形成方法については、例え
ばスパッタリング等の方法で形成することができる。次
いで、図２（ｃ）に示すように、例えばフォトリソグラ
フィー技術等を用いて、形状記憶合金薄膜２及びＡｌ層
３をパターンニングして所望の形状に加工する。次い
で、弧状形状を形状記憶合金薄膜２に記憶させるため
に、加熱炉等で形成した４００℃の雰囲気に形状記憶合
金薄膜２及びＡｌ層３のパターンニングを終えたＳｉ基
板１を入れる。このとき、Ａｌ層３とＳｉ基板１の熱膨
張係数が異なることに基づくバイメタル効果によって図
２（ｄ）に示すように、形状記憶合金薄膜２及びＡｌ層
３をその表面に形成したＳｉ基板１は弧状形状を形成す
る。そして、形状記憶合金薄膜２に形状記憶させるため
に、例えば４００℃で６時間の形状記憶処理を行って、
形状記憶合金素子を完成する。なお、形状記憶処理の条
件は、形状記憶合金の種類によって適宜決定することが
できる。このように、第２の実施の形態では、特別な冶
具を使用することなしに、形状記憶合金薄膜と基板とが
接合された構造の形状記憶合金素子を製造することがで
きる。FIG. 2 is a schematic sectional view showing a second embodiment, in which (a), (b), (c) and (d) show the state of each step. First, as shown in FIG. 2A, a Si substrate 1 having a thickness of 20 μm processed into a predetermined shape is prepared, and Ti—Ni is sputtered on one surface of the Si substrate 1 using a sputtering apparatus. A shape memory alloy thin film 2 made of an alloy is formed with a thickness of 5 μm. Next, as shown in FIG.
An Al layer 3 having a thickness of 10 μm is formed as a metal layer having a thermal expansion coefficient different from that of the Si substrate 1 on the surface opposite to the bonding surface with the i substrate 1. The Al layer 3 can be formed by, for example, a method such as sputtering. Next, as shown in FIG. 2C, the shape memory alloy thin film 2 and the Al layer 3 are patterned into a desired shape by using, for example, a photolithography technique. Next, in order to store the arc shape in the shape memory alloy thin film 2, the Si substrate 1 on which the patterning of the shape memory alloy thin film 2 and the Al layer 3 has been completed is put into an atmosphere of 400 ° C. formed by a heating furnace or the like. At this time, as shown in FIG. 2D, the Si substrate 1 having the shape memory alloy thin film 2 and the Al layer 3 formed on the surface thereof by a bimetal effect based on the difference in the thermal expansion coefficient between the Al layer 3 and the Si substrate 1. Form an arcuate shape. Then, in order to store the shape in the shape memory alloy thin film 2, for example, a shape memory process is performed at 400 ° C. for 6 hours.
Complete the shape memory alloy element. The condition of the shape memory processing can be appropriately determined depending on the type of the shape memory alloy. As described above, in the second embodiment, a shape memory alloy element having a structure in which the shape memory alloy thin film and the substrate are joined can be manufactured without using a special jig.
【００１７】そして、得られた形状記憶合金素子は、形
状記憶合金薄膜２の変態点以下の温度では、Ｓｉ基板１
による応力で平板に近い状態の形状となり、形状記憶合
金薄膜２の変態点以上の温度では、形状記憶合金薄膜２
に記憶させた弧状形状を形成する形状記憶合金素子とな
る。At a temperature lower than the transformation point of the shape memory alloy thin film 2, the obtained shape memory alloy
At a temperature higher than the transformation point of the shape memory alloy thin film 2 at a temperature higher than the transformation point of the shape memory alloy thin film 2.
Is a shape memory alloy element that forms the arc shape stored in the memory device.
【００１８】上記の第２の実施の形態において、形状記
憶合金薄膜２とＡｌ層３との間に、樹脂層を設けるよう
にすると、この樹脂層が形状記憶合金薄膜２へのＡｌの
拡散防止の働きをするので、形状記憶合金薄膜２が劣化
することが防止される。なお、樹脂層の材質としては、
ポリイミド樹脂を用いることが、耐熱性の点で好ましい
が、形状記憶合金素子の働きをさせるための温度に耐え
る材質であれば特に制限はない。In the second embodiment, if a resin layer is provided between the shape memory alloy thin film 2 and the Al layer 3, this resin layer prevents diffusion of Al into the shape memory alloy thin film 2. Therefore, the shape memory alloy thin film 2 is prevented from deteriorating. In addition, as the material of the resin layer,
It is preferable to use a polyimide resin in terms of heat resistance, but there is no particular limitation as long as it is a material that can withstand the temperature for causing the shape memory alloy element to work.
【００１９】また、上記の第１の実施の形態又は第２の
実施の形態において、Ｓｉ基板１の厚みを所定の区間で
変えることで、バイメタル効果によって形成される弧状
形状の曲率を制御することができる。Ｓｉ基板１の厚み
を所定の区間で変える方法としては、例えばＳｉ基板１
をエッチングする等の方法で行うことができる。In the first or second embodiment, the curvature of the arc-shaped shape formed by the bimetal effect is controlled by changing the thickness of the Si substrate 1 in a predetermined section. Can be. As a method of changing the thickness of the Si substrate 1 in a predetermined section, for example,
Can be performed by a method such as etching.
【００２０】また、上記の第１の実施の形態又は第２の
実施の形態において、Ｓｉ基板１内にヒータを内蔵させ
て、Ｓｉ基板１の発熱によって、形状記憶合金薄膜２に
形状記憶させるに十分な熱を加えるようにすると、形状
記憶合金素子２に形状記憶させるための熱源が不用とな
り、容易に弧状の形状を記憶させることが可能となる。
Ｓｉ基板１内にヒータを内蔵させる方法については、例
えば拡散抵抗をＳｉ基板１内に形成し、この拡散抵抗に
通電する方法等によってヒータを内蔵させることができ
る。In the first or second embodiment, a heater is built in the Si substrate 1 and the shape memory alloy thin film 2 is made to store the shape by the heat generated by the Si substrate 1. When sufficient heat is applied, a heat source for storing the shape in the shape memory alloy element 2 is not necessary, and the arc shape can be easily stored.
With respect to a method of incorporating a heater in the Si substrate 1, for example, a heater can be incorporated by forming a diffusion resistor in the Si substrate 1 and energizing the diffusion resistor.
【００２１】[0021]
【発明の効果】請求項１〜請求項５に係る発明では、、
形状記憶合金薄膜と基板の熱膨張係数が異なることに基
づくバイメタル効果又は基板と金属層の熱膨張係数が異
なることに基づくバイメタル効果によって形成される弧
状形状を形状記憶合金薄膜に記憶させるので、特別な冶
具を使用することなしに、形状記憶合金薄膜と基板とが
接合された構造の形状記憶合金素子を製造することがで
きる。According to the first to fifth aspects of the present invention,
Specially because the shape memory alloy thin film memorizes the arc-shaped shape formed by the bimetal effect based on the difference in thermal expansion coefficient between the shape memory alloy thin film and the substrate or the bimetal effect based on the difference in thermal expansion coefficient between the substrate and the metal layer, It is possible to manufacture a shape memory alloy element having a structure in which a shape memory alloy thin film and a substrate are joined without using any jig.
【００２２】請求項３に係る発明では、上記の効果に加
えて、樹脂層が形状記憶合金薄膜への金属層の金属の拡
散防止の働きをするので、形状記憶合金薄膜が劣化する
ことが防止される。According to the third aspect of the present invention, in addition to the above effects, the resin layer functions to prevent the diffusion of the metal of the metal layer into the shape memory alloy thin film. Is done.
【００２３】請求項４に係る発明では、上記の請求項１
〜請求項５に係る発明の効果に加えて、バイメタル効果
によって形成される弧状形状の曲率を制御することがで
きるので、所望の形状を記憶させることが容易になる。In the invention according to claim 4, the above-mentioned claim 1 is provided.
In addition to the effects of the inventions according to the fifth to fifth aspects, the curvature of the arc shape formed by the bimetal effect can be controlled, so that the desired shape can be easily stored.
【００２４】請求項５に係る発明では、基板内にヒータ
を内蔵させて、基板の発熱によって、形状記憶合金薄膜
に形状記憶させるに十分な熱を加えることができるの
で、上記の請求項１〜請求項５に係る発明の効果に加え
て、形状記憶合金素子に形状記憶させるための熱源が不
用となり、容易に弧状の形状を記憶させることが可能と
なる。In the invention according to claim 5, since a heater is built in the substrate and sufficient heat can be applied to cause the shape memory alloy thin film to store its shape by the heat generation of the substrate. In addition to the effect of the invention according to claim 5, a heat source for storing the shape in the shape memory alloy element is not necessary, and the arc shape can be easily stored.
【図１】本発明の第１の実施の形態を示す概略断面図で
あり、（ａ）、（ｂ）は各工程毎の状態を示している。FIG. 1 is a schematic cross-sectional view showing a first embodiment of the present invention, wherein (a) and (b) show the state of each step.
【図２】本発明の第２の実施の形態を示す概略断面図で
あり、（ａ）、（ｂ）、（ｃ）、（ｄ）は各工程毎の状
態を示している。FIG. 2 is a schematic cross-sectional view showing a second embodiment of the present invention, wherein (a), (b), (c), and (d) show the state of each step.
１ Ｓｉ基板 ２ 形状記憶合金薄膜 ３ Ａｌ層 Reference Signs List 1 Si substrate 2 Shape memory alloy thin film 3 Al layer
Claims (5)
構造の形状記憶合金素子を製造する形状記憶合金素子の
製造方法であって、基板の表面に、この基板とは熱膨張
係数が異なる形状記憶合金薄膜を形成した後、形状記憶
合金薄膜に形状記憶させるに十分な熱を加えることによ
り、形状記憶合金薄膜と前記基板の熱膨張係数が異なる
ことに基づくバイメタル効果によって形成される弧状形
状を形状記憶合金薄膜に記憶させることを特徴とする形
状記憶合金薄膜の製造方法。1. A method of manufacturing a shape memory alloy element having a structure in which a shape memory alloy thin film and a substrate are joined to each other, wherein the substrate has a different thermal expansion coefficient from a surface of the substrate. After the shape memory alloy thin film is formed, by applying heat sufficient to cause the shape memory alloy thin film to have a shape memory, an arc shape formed by a bimetal effect based on a difference in thermal expansion coefficient between the shape memory alloy thin film and the substrate. Is stored in a shape memory alloy thin film.
構造の形状記憶合金素子を製造する形状記憶合金素子の
製造方法であって、基板の表面に、形状記憶合金薄膜を
形成すると共に、この形状記憶合金薄膜の前記基板との
接合面と反対側の面に、前記基板の熱膨張係数と異なる
金属層を形成した後、形状記憶合金薄膜に形状記憶させ
るに十分な熱を加えることにより、前記基板と前記金属
層の熱膨張係数が異なることに基づくバイメタル効果に
よって形成される弧状形状を形状記憶合金薄膜に記憶さ
せることを特徴とする形状記憶合金素子の製造方法。2. A method of manufacturing a shape memory alloy element having a structure in which a shape memory alloy thin film and a substrate are joined to each other, comprising: forming a shape memory alloy thin film on a surface of a substrate; After forming a metal layer having a coefficient of thermal expansion different from the thermal expansion coefficient of the substrate on the surface of the shape memory alloy thin film opposite to the bonding surface with the substrate, by applying sufficient heat to the shape memory alloy thin film to cause shape memory. A method of manufacturing a shape memory alloy element, wherein an arc shape formed by a bimetal effect based on a difference in thermal expansion coefficient between the substrate and the metal layer is stored in a shape memory alloy thin film.
脂層を設けることを特徴とする請求項２記載の形状記憶
合金素子の製造方法。3. The method for manufacturing a shape memory alloy element according to claim 2, wherein a resin layer is provided between the shape memory alloy thin film and the metal layer.
で、バイメタル効果によって形成される弧状形状の曲率
を制御するようにしたことを特徴とする請求項１乃至請
求項３の何れかに記載の形状記憶合金素子の製造方法。4. The apparatus according to claim 1, wherein the curvature of the arc shape formed by the bimetal effect is controlled by changing the thickness of the substrate in a predetermined section. Method for manufacturing a shape memory alloy element.
ーターを発熱させることによって、形状記憶合金薄膜に
形状記憶させるに十分な熱を加えるようにしていること
を特徴とする請求項１乃至請求項４の何れかに記載の形
状記憶合金素子の製造方法。5. A method according to claim 1, wherein a heater is incorporated in the substrate, and the heater generates heat to apply sufficient heat to cause the shape memory alloy thin film to store its shape. Item 5. A method for manufacturing a shape memory alloy element according to any one of Items 4.
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|---|---|---|---|
| JP2000220865A JP2002039053A (en) | 2000-07-21 | 2000-07-21 | Method for manufacturing shape-memory alloy element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000220865A JP2002039053A (en) | 2000-07-21 | 2000-07-21 | Method for manufacturing shape-memory alloy element |
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| JP2002039053A true JP2002039053A (en) | 2002-02-06 |
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ID=18715396
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| JP2010043530A (en) * | 2008-07-15 | 2010-02-25 | National Institute For Materials Science | Shape memory alloy actuator |
| WO2011016383A1 (en) * | 2009-08-05 | 2011-02-10 | コニカミノルタホールディングス株式会社 | Actuator, drive device and camera module |
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| JP2010043530A (en) * | 2008-07-15 | 2010-02-25 | National Institute For Materials Science | Shape memory alloy actuator |
| WO2011016383A1 (en) * | 2009-08-05 | 2011-02-10 | コニカミノルタホールディングス株式会社 | Actuator, drive device and camera module |
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| WO2012096348A1 (en) * | 2011-01-13 | 2012-07-19 | 独立行政法人物質・材料研究機構 | Method for manufacturing thin film actuator |
| JP2012145055A (en) * | 2011-01-13 | 2012-08-02 | National Institute For Materials Science | Method for manufacturing thin film actuator |
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