JP2002033823A - User authentication system for concerned person authentication method and mobile phone device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a user authentication system and method that employ the Internet and a mobile information communication device. SOLUTION: The user authentication system for a mobile information communication unit having a liquid crystal display device reads personal information of a user by an image sensor incorporated in the liquid crystal display device and authenticates the person concerned on the basis of the information. This invention provides the user authentication system that is characterized in that the image sensor reads the personal information of the user, authenticates the user and transmits the result of authentication via the Internet. That is, this invention provides the user authentication system where image sensor reads the personal information of the user, the user is authenticated, and the necessity of transmission of the authentication result is discriminated depending on the necessity set to the mobile information communication unit or a communication destination in advance and the authentication result is transmitted via the Internet only when the transmission is required.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an identity authentication system or identity authentication method, and more particularly to identity authentication using a liquid crystal display device with a built-in image sensor provided in a portable information communication device. Authentication system or personal authentication method.

[0002]

2. Description of the Related Art In recent years, communication technology using the Internet using portable information communication devices such as portable telephones and portable information terminals has been rapidly developing. In the conventional Internet, a system in which a telephone line is connected to a stationary personal computer at a company or home to communicate with a central processing unit (here, a host computer or a server) is mainly used. However, recently, the method of connecting to the Internet from a mobile phone has become widespread, and various information exchanges have been easily performed.

FIG. 18 shows an example of a conventional portable telephone device.
A conventional mobile phone device as shown in FIG.
01, audio output unit 1802, audio input unit 1803, display unit 1804, operation switch 1805, antenna 1806
It is constituted by such as. When making a normal call, the telephone number of the other party, the reception status of radio waves, and the like are displayed on the liquid crystal display. When the Internet is used, necessary information of the other party is displayed.

When a transaction such as money transfer is performed on the Internet using a conventional portable telephone device as shown in FIG. 18, it is necessary to confirm the identity of the person. In that case, enter the password registered in advance with the other party,
They exchanged data with the central processing unit of the other party to confirm.

FIG. 19 shows a flow of conventional personal authentication.
The user first establishes a connection with the desired destination via the Internet. Next, under the conditions specified by the other party, a numerical value (password) for authentication is input from the portable telephone device. The other party who receives the numerical value compares the numerical value with the numerical value registered in advance at its own place and confirms whether or not it matches. If a match is found here, the user is confirmed as the person himself, and the desired response can be obtained.

[0006]

However, in the conventional authentication system using a portable telephone as described above, (1) it is difficult to confirm the identity of the person and the personal identification number is leaked to a person other than the person. (2) Communication cost increases because identification is performed each time through communication with the other party, and re-confirmation is required when a call is disconnected. (3) ) There was a problem that a lot of time and effort was required to enter a keyboard.

[0007] The present invention has been made in view of the above problems, and has as its object to provide a personal authentication system and a personal authentication method using the Internet and a portable information communication device.

[0008]

According to the present invention, there is provided a personal authentication system for a portable information communication device having a liquid crystal display device, wherein the liquid crystal display device has a built-in image sensor. It is characterized in that it is an identity authentication system that reads individual information of a user by an image sensor and performs identity authentication based on the read information.

Further, the present invention provides a personal identification device comprising a liquid crystal display device having a built-in image sensor, a storage device, and a function of comparing individual information read by the image sensor with individual information stored in the storage device. It is characterized by being a system. Alternatively, a liquid crystal display device with a built-in image sensor, a storage device, a function of comparing individual information read by the image sensor with individual information stored in the storage device to determine whether or not the user is himself, and a determination result Is transmitted to the central processing unit.

[0010] The image sensor reads the individual information of the user and performs personal authentication, and the authentication result is transmitted via the Internet to provide a personal authentication system. Alternatively, the image sensor reads the individual information of the user, performs personal authentication, and determines whether or not transmission of the authentication result is necessary or not according to the necessity set in advance in the portable information communication device or the communication destination. A personal authentication system characterized by having a function of transmitting a determination result to a central processing unit via the Internet only in the case is provided.

According to the present invention, in a personal authentication method using a portable information communication device having a liquid crystal display device, the liquid crystal display device has a built-in image sensor, the image sensor reads individual information of a user, and And a personal authentication method for performing personal authentication based on the read information.

An image sensor reads the individual information of a user, performs identity authentication, and transmits the authentication result to a central processing unit via the Internet, thereby providing an identity authentication method. Alternatively, the image sensor reads the individual information of the user, performs personal authentication, and determines the necessity of transmission of the authentication result according to the necessity set in advance in the portable communication device or the communication destination. A personal authentication method is provided in which the authentication result is transmitted to the central processing unit via the Internet only in the case.

The personal identification operation may be controlled by operation keys on the portable information communication device. The operation keys may be controlled by only the dominant hand of the user, only the index finger, or only the thumb.

[0014] The personal authentication may be performed at the same time when the power of the portable information communication device is turned on. A palm print (palm) or a fingerprint may be used as the user's individual information, and the palm print may be characterized by using the whole or a part of the palm. It may be characterized in that only the authentication result is transmitted via the Internet, and data for the authentication operation is not transmitted. The image sensor may be a contact image sensor.

A portable telephone device applied to such a personal identification system incorporates a liquid crystal display device with a built-in image sensor and a nonvolatile memory or a rewritable nonvolatile memory (flash memory or the like), and individual information read by the image sensor. There may be provided a means for collating with the user individual information stored in the nonvolatile memory.

The present invention reduces the size of a portable information communication device by using a liquid crystal display device having a built-in image sensor and installing a display portion for displaying information such as characters and images and an image sensor portion in the same portion. Has been realized. Further, it is possible to save the user from having to input a personal identification number or the like every time the user is authenticated. Also, by automatically performing personal authentication when the power of the portable information terminal device is turned on, the number of times of communication with the other party's central processing unit can be reduced to one, thereby preventing an increase in communication cost. In addition, it is possible to save time and effort for inputting from the keyboard.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] FIG. 1 shows a liquid crystal display device used in a personal authentication system according to the present invention. The liquid crystal display device includes a substrate 301 (hereinafter, referred to as a TFT array substrate) on which a pixel portion and a driver circuit are formed using a TFT, a counter substrate 302, a polarizing plate 312, a first front light 303,
It comprises a second front light 304. TF
A liquid crystal layer 310 is provided between the T array substrate 301 and the counter substrate 302, and is sealed with a sealant 313.

Since the portable information communication device requires low power consumption, a reflection type liquid crystal display device for displaying by using external light is applied, and a front light source is used as an auxiliary light source for improving visibility in a dark place. Lights are used. In FIG. 1, the first front light 303 corresponds to this and is provided on the front surface. The first front light 303 includes a light source 315 including a cold cathode tube or a light emitting diode (LED), a diffusion plate 316, a light guide plate 317, and the like. Light emitted from the light guide plate 317 to the liquid crystal layer 310 side is
At 09, the light is reflected and used by the user.

The pixel portion 30 is provided on the TFT array substrate 301.
6, a drive circuit portion 305 and an external input terminal 314 are formed. The pixel portion 306 is formed by arranging a plurality of pixels in a matrix.
9 connected to the pixel TFT 307 and the photodiode 30
8 are provided. The photodiodes 308 are two-dimensionally arranged to form an image sensor. Further, a counter electrode 311 is formed on the counter substrate 302.

The personal authentication is performed by palm print (palm) or fingerprint as the user's individual information. The palm print uses the whole or a part of the palm, and this information is obtained by an image sensor including a photodiode 308 provided for each pixel. Second front light 304
Is a light source for the image sensor. Light emitted from a light source 318 formed of a cold cathode tube or a light emitting diode (LED) propagates through the light guide plate 320 through the diffusion plate 319. A part of the light is radiated to the solid surface 321 to be identified, and the light reflected from the surface is reflected by the photodiode 3
08.

As described above, in the liquid crystal display device shown in this embodiment, it is possible to display an image and read individual information by an image sensor in a reflection type liquid crystal display device using two front lights. Actually, the first front light 303 and the second front light 304 are not turned on at the same time, and are operated alternately according to the case of displaying an image and the case of reading an image.

By using a reflection type liquid crystal display device which can be displayed using external light as shown in this embodiment, the power consumption of the portable information communication device can be reduced. If the front light is not enough,
It can be used not only as an auxiliary light source when used at night, but also as a light source for an image sensor built in a reflective liquid crystal display device when authenticating a palm print.

[Embodiment 2] The identification of individual information (physical characteristic information inherent to a person, such as fingerprints and palm prints) possessed by the user is performed by the portable information communication device itself, thereby simplifying the system. It increases the nature.

FIG. 2 shows an authentication flow of the personal authentication system of the present invention. First, an instruction to collect individual information is issued on the keyboard. If programmed in advance, it is possible to easily start collecting individual information by pressing one key. It is also possible to automatically start collecting individual information when the power of the portable information communication device is turned on.

The obtained individual information is compared with individual information stored in advance in a non-volatile memory or a rewritable non-volatile memory (such as a flash memory) as a storage device in the portable information communication device.
Here, if it is determined that the two pieces of individual information match, the user is determined to be the correct owner of the portable information communication device. After determining whether or not the user is the principal, the authentication result is transmitted to the other party. The authentication result is transmitted to a central processing unit such as a host computer or server of the other party through the Internet or a wireless communication line. At this time, since the authentication work has already been completed, there is no need to perform a new authentication work with the other party, and the other party only receives information that the authentication has been completed from the portable information communication device. Good.

The portable information communication device used in the personal authentication system of the present invention is characterized in that an image sensor is built in a liquid crystal display device. The image sensor is used to read the user's individual information. The individual information here is
Specifically, it is a fingerprint or a palm print (palm) of the palm.

Next, the portable information communication device of the present invention will be described. FIG. 3 shows a portable information communication device according to the present invention, wherein 2701 is a display panel, 2702 is an operation panel, and 2709 is an antenna. Display panel 2701
The operation panel 2702 is connected to the operation panel 2702 at a connection portion 2703. The surface of the connection panel 2703 on which the sensor built-in display 2704 of the display panel 2701 is provided and the operation key 2 of the operation panel 2702
The angle θ with respect to the surface provided with 706 can be arbitrarily changed. This function can change the angle according to the user's preference, so that usability can be improved.

The display panel 2701 has a display 2704 with a built-in sensor. The portable information communication device shown in FIG. 3 has a function as a telephone. The display panel 2701 has an audio output unit 2705, and audio is output from the audio output unit 2705. A reflective liquid crystal display device is used for the sensor built-in display 2704.

The operation panel 2702 has an operation key 270
6, a power switch 2707 and a voice input unit 2708. Although the operation key 2706 and the power switch 2707 are provided separately in FIG. 3, a configuration in which the power switch 2707 is included in the operation key 2706 may be employed. In the voice input unit 2708, voice is input.

In FIG. 3, the display panel 2701 has the audio output unit 2705 and the operation panel 2702 has the audio input unit 2708, but the present embodiment is not limited to this configuration. The display panel 2701 is a voice input unit 270
8 and the operation panel may have a sound output unit 2705. The audio output unit 2705 and the audio input unit 27
08 may be provided on the display panel 2701, or the audio output unit 2705 and the audio input unit 2708 may be both provided on the operation panel 2702.

Referring to FIGS. 4 and 5, a method of using the portable information communication device shown in FIG. 3 will be described. As shown in FIG. 4, when authentication is performed by the present device, the palm is used so as to cover the portable information communication device. In the authentication, a key operation is performed with a keyboard, and a display with an image sensor reads a palm print of a user, and performs individual identification information. The authentication work is performed by comparing the individual information read by the image sensor with the individual information stored in a nonvolatile memory such as a built-in flash memory. Here, since the palm covers the portable device, light used for sensing needs to be obtained from the display side. As shown in FIG. 20, palm print (palm)
Is read by the sensor.

Although FIG. 4 shows an example in which the operation key 2706 is operated with the index finger, as shown in FIG. 5, the operation key 2706 can be operated with the thumb. Note that the operation key 2706 may be provided on a side surface of the operation panel 2702. The operation can be performed with only one index finger or one thumb.

As described above, the portable information communication device shown in FIG. 3 can be used as a portable telephone device, but is characterized by taking in information from the outside by a display having a built-in image sensor.

By using a liquid crystal display device having a built-in image sensor and installing a display portion for displaying information such as characters and images and an image sensor portion at the same site, the portable information communication device can be downsized. Can be. Further, it is possible to save the user from having to input a personal identification number or the like every time the user is authenticated. Also, by automatically performing personal authentication when the power of the portable information terminal device is turned on, the number of times of communication with the other party's central processing unit can be reduced to one, thereby preventing an increase in communication cost. In addition, it is possible to save time and effort for inputting from the keyboard.

[0035]

[Embodiment 1] The configuration and operation of an embodiment of a portable information communication apparatus having a sensor built-in liquid crystal display device used in the present invention will be described below.

FIG. 6 is a block diagram of the portable information communication device of the present embodiment. This portable information communication device has an antenna 6
01, a transmission / reception circuit 602, a signal processing circuit 603 for compressing / expanding and encoding a signal, a control microcomputer 604, a flash memory 605, a keyboard 606, an audio input circuit 607, an audio output circuit 608, a microphone 609, a speaker 610, and the like. Having the same as before,
In addition, the display 61 with built-in image sensor
1, a matching circuit unit 612 and the like.

When performing collation, analog image information obtained by a sensor inside the display is converted into a digital signal by an A / D converter 613. The converted signal is sent to a DSP (Digital Signal Processor) 614 for signal processing. In the signal processing, it is effective to use a differential filter or the like to highlight a portion where the shading of the image changes, so that the palm print can be more easily distinguished. The obtained palm data is digitized inside the DSP 614 and sent to the comparison circuit 615. Comparison circuit 615
The reference data stored in the flash memory 605 is also called, and the two data are compared and compared.

As a method of determining the individual information data,
There are a feature matching method in which the respective features of the original data and the collected data are compared and compared, and an image matching method in which the two data are directly compared, but there is no problem using either method. Also, there is not only one reference data,
By providing a plurality of authentication data by slightly changing the direction of the hand, more reliable authentication can be performed.

If a match is found, the control microcomputer 604 outputs an authentication signal.
03, transmitted via the transmitting / receiving circuit 602 and the antenna 601, and transmitted to a central processing unit such as a host computer or a server via the Internet or the like.

[Embodiment 2] FIG. 7 is a block diagram showing the configuration of a liquid crystal display device with a built-in sensor used in the present invention.
120 is a source signal line driving circuit, and 122 is a gate signal line driving circuit. Reference numeral 121 denotes a sensor source signal line drive circuit, and reference numeral 123 denotes a sensor gate signal line drive circuit, which is provided in each pixel and controls driving of a reset TFT, a buffer TFT, and a selection TFT. In this specification, the source signal line drive circuit 120, the gate signal line drive circuit 122, the sensor source signal line drive circuit 121, and the sensor gate signal line drive circuit 123
Are collectively called a drive circuit unit.

The source signal line drive circuit 120 includes a shift register 120a, a latch (A) 120b, and a latch (B)
120c. In the source signal line driving circuit 120, a clock signal (CL
K) and a start pulse (SP) are input. The shift register 120a receives these clock signals (CL
K) and a timing signal are sequentially generated based on the start pulse (SP), and the timing signal is sequentially supplied to a subsequent circuit.

The timing signal from the shift register 120a may be buffered and amplified by a buffer or the like (not shown), and the buffered timing signal may be sequentially supplied to a subsequent circuit. The wiring to which the timing signal is supplied
Since many circuits or elements are connected, the load capacitance (parasitic capacitance) is large. This buffer is provided to prevent "dulling" of the rise or fall of the timing signal caused by the large load capacitance.

FIG. 8 shows an example of a circuit diagram of the pixel and the sensor section 101. The pixel and sensor unit 101 includes source signal lines S1 to Sx, gate signal lines G1 to Gy, and a capacitance line CS1.
To CSy, reset gate signal lines RG1 to RGy, sensor gate signal lines SG1 to SGy, sensor output wirings SS1 to SSx, and sensor power supply line VB.

The pixel and sensor unit 101 includes a plurality of pixels 1
It consists of 02. The pixel 102 has a source signal line S1
Sx, any one of the gate signal lines G1 to Gy, any one of the capacitance lines CS1 to CSy, any one of the reset gate signal lines RG1 to RGy, and the sensor gate signal line. It has any one of SG1 to SGy, any one of sensor output wirings SS1 to SSx, and a sensor power supply line VB. The sensor output wirings SS1 to SSx are connected to constant current power supplies 103-1 to 103-x, respectively.

FIG. 9 shows a detailed configuration of the pixel 102. A region surrounded by a dotted line is the pixel 102. Note that the source signal line S means any one of the source signal lines S1 to Sx. The gate signal lines G are gate signal lines G1 to Gy.
Means any one of The capacitance line CS is the capacitance line C
It means any one of S1 to CSy. Also, the reset gate signal lines RG are reset gate signal lines RG1 to RG1.
It means any one of RGy. In addition, the sensor gate signal lines SG include the sensor gate signal lines SG1 to SG.
means any one of y. Also, sensor output wiring S
S means any one of the sensor output wirings SS1 to SSx.

The pixel 102 is a pixel TFT 10 for driving a liquid crystal.
4, a liquid crystal element 106, and a storage capacitor 107. The liquid crystal element 106 includes a pixel electrode, a counter electrode, and a liquid crystal layer therebetween. The gate electrode of the pixel TFT 104 is connected to the gate signal line G. And the pixel TFT 104
One of the source region and the drain region has a source signal line S
The other is connected to the liquid crystal element 106 and the storage capacitor 107.

Further, the pixel 102 includes a reset TFT 1
10, buffer TFT 111, selection TFT 112,
It has a photodiode 113. Reset TF
The gate electrode of T110 is connected to the reset gate signal line RG. The source region of the reset TFT 110 is connected to the sensor power supply line VB. The sensor power supply line VB is always kept at a constant potential (reference potential). The drain region of the reset TFT 110 is connected to the photodiode 113 and the gate electrode of the buffer TFT 111.

Although not shown, the photodiode 113 has a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the cathode electrode and the anode electrode.
The drain region of the reset TFT 110 is specifically connected to an anode electrode or a cathode electrode of the photodiode 113. The drain region of the buffer TFT 111 is connected to the sensor power supply line VB, and is always kept at a constant reference potential. And TF for buffer
The source region of T111 is connected to the source or drain region of the selection TFT 112.

The gate electrode of the selection TFT 112 is connected to the sensor gate signal line SG. One of the source region and the drain region of the selection TFT 112 is connected to the source region of the buffer TFT 111 as described above, and the other is connected to the sensor output wiring SS. The sensor output wiring SS is a constant current power supply 103
(One of the constant current power supplies 103-1 to 103-x)
And a constant current always flows.

The timing signal from the shift register 120a shown in FIG. 7 is supplied to the latch (A) 120b. The latch (A) 120b outputs a digital signal (digital).
signals) for processing a plurality of stages. The latch (A) 120b sequentially writes and holds a digital signal simultaneously with the input of the timing signal.

When the digital signal is taken into the latch (A) 120b, the digital signal may be sequentially inputted to the latches of a plurality of stages of the latch (A) 120b. However, the present invention is not limited to this configuration. The latches of a plurality of stages included in the latch (A) 120b may be divided into several groups, and a so-called divided drive in which digital signals are simultaneously input to the groups in parallel may be performed. The number of groups at this time is called a division number. For example, when the latch is divided into groups for every four stages, it is referred to as divided drive in four divisions.

The time required to complete the writing of digital signals to the latches of all the stages of the latch (A) 120b is called a line period. That is, the latch (A) 1
A line interval is a time interval from the time when the writing of the digital signal to the latch of the leftmost stage is started to the time when the writing of the digital signal to the latch of the rightmost stage ends in 20b. Actually, the line period may include a period obtained by adding the horizontal retrace period to the line period.

When one line period ends, the latch (B)
A latch signal (LatchSignal) is supplied to 120c. At this moment, the digital signal written and held in the latch (A) 120b is simultaneously sent to the latch (B) 120c, and written and held in the latches of all the stages of the latch (B) 120c.

The latch (A) 120b, which has finished sending the digital signal to the latch (B) 120c,
The digital signal is sequentially written again based on the timing signal from 20a. During this second line period, the digital signal written and held in the latch (B) 120b is input to the source signal lines S1 to Sx.

On the other hand, the gate signal side drive circuit 122 includes a shift register and a buffer (both not shown).
have. In some cases, the gate signal side driver circuit 122 may have a level shift in addition to the shift register and the buffer.

In the gate signal side drive circuit 122, a gate signal from a shift register (not shown) is supplied to a buffer (not shown) and supplied to a corresponding gate signal line. The gate signal lines G1 to Gy are respectively connected to the gate electrodes of the pixel TFTs 104 of the pixels for one line, and the pixel TFTs 104 of all the pixels for one line must be turned on at the same time. Those capable of flowing a large current are used.

The number, configuration, and operation of the source signal line driving circuit and the gate signal line driving circuit are not limited to the configuration shown in this embodiment. As the area sensor used for the sensor built-in display of the present invention, a known source signal line driving circuit and a known gate signal line driving circuit can be used. Such a configuration of the present embodiment can be applied in combination with the first embodiment.

[Embodiment 3] FIG. 10 shows a circuit diagram of a sensor section having a configuration different from that of the sensor section of Embodiment 2. The pixel and sensor unit 1001 includes source signal lines S1 to Sx,
Gate signal lines G1 to Gy, capacitance lines CS1 to CSy, reset gate signal lines RG1 to RGy, sensor output lines SS1 to SSx, and a sensor power supply line VB are provided.

The pixel and sensor section 1001 has a plurality of pixels 1002. The pixel 1002 has one of the source signal lines S1 to Sx and the gate signal lines G1 to Gy.
And any one of the capacitance lines CS1 to CSy
And one of the reset gate signal lines RG1 to RGy, one of the sensor output wirings SS1 to SSx, and the sensor power supply line VB. Sensor output wirings SS1 to SSx are each provided with a constant current power supply 100.
3-1 to 1003-x.

The pixel 1002 has a pixel TFT 1004, a storage capacitor 1007, and a liquid crystal element 1006. Further, the pixel 1002 includes a reset TFT 1010, a buffer TFT 1011, a selection TFT 1012, and a photodiode 1013.

The liquid crystal element 1006 is composed of a pixel electrode, a counter electrode, and a liquid crystal layer provided therebetween. The gate electrode of the pixel TFT 1004 is connected to a gate signal line (G1 to G
y). One of the source region and the drain region of the pixel TFT 1004 is connected to the source signal line S,
The other is connected to the liquid crystal element 1006 and the storage capacitor 1007.

The gate electrode of the reset TFT 1010 is connected to reset gate signal lines (RG1 to RGx). The source region of the reset TFT 1010 is connected to the sensor power supply line VB. The sensor power supply line VB is always kept at a constant potential (reference potential). The drain region of the reset TFT 1010 is connected to the photodiode 1013 and the gate electrode of the buffer TFT 1011.

Although not shown, the photodiode 1013
Has a cathode electrode, an anode electrode, and a photoelectric conversion layer provided between the cathode electrode and the anode electrode. The drain region of the reset TFT 1010 is specifically connected to the anode electrode or the cathode electrode of the photodiode 1013.

The drain region of the buffer TFT 1011 is connected to the sensor power supply line VB, and is always kept at a constant reference potential. And the buffer TFT 10
The source region 11 is connected to the source or drain region of the selection TFT 1012.

The gate electrode of the selection TFT 1012 is connected to gate signal lines (G1 to Gx). One of the source region and the drain region of the selection TFT 1012 is connected to the source region of the buffer TFT 1011 as described above, and the other is connected to the sensor output wiring (S
S1 to SSx). The sensor output wirings (SS1 to SSx) are connected to constant current power supplies 1003 (constant current power supplies 1003-1 to 1003-x), and a constant current always flows.

In this embodiment, the polarities of the pixel TFT 1004 and the selection TFT 1012 are the same. I mean.
When the pixel TFT 1004 is an n-channel TFT, the selection TFT 1012 is also an n-channel TFT. When the pixel TFT 1004 is a p-channel TFT, the selection TFT 1012 is also a p-channel TFT.

The sensor section of the image sensor of this embodiment is different from the image sensor shown in FIG. 8 in that the gate electrode of the pixel TFT 1004 and the selection TFT 101
2 are both connected to the gate signal lines (G1 to Gx). Such a configuration of the present embodiment can be implemented by freely combining with the first embodiment.

[Embodiment 4] FIG. 11 is a block diagram showing a structure of a display with a built-in sensor according to this embodiment. 13
0 is a source signal line drive circuit, and 132 is a gate signal line drive circuit. Reference numeral 131 denotes a sensor source signal line driving circuit, and reference numeral 133 denotes a sensor gate signal line driving circuit. In this embodiment, one source signal line drive circuit and one gate signal line drive circuit are provided, but the present invention is not limited to this configuration. Two source signal line driver circuits may be provided. Further, two gate signal line driver circuits may be provided.

The source signal line driving circuit 130 has a shift register 130a, a level shift 130b, and a sampling circuit 130c. Note that the level shift may be used as needed, and may not necessarily be used. In this embodiment, the level shift is performed by the shift register 130.
Although the configuration is provided between a and the sampling circuit 130c, the present invention is not limited to this configuration. Further, a configuration may be employed in which the level shift 130b is incorporated in the shift register 130a.

The clock signal (CLK) and the start pulse signal (SP) are input to the shift register 130a.
A sampling signal for sampling an analog signal (analog signal) is output from the shift register 130a. The output sampling signal is input to the level shift 130b, and is output with its potential amplitude increased.

The sampling signal output from the level shift 130b is input to a sampling circuit 130c. Then, the analog signals input to the sampling circuit 130c are respectively sampled by the sampling signals and input to the source signal lines S1 to Sx.

On the other hand, the gate signal side drive circuit 132 includes a shift register and a buffer (both not shown).
have. In some cases, the gate signal side driving circuit 132 may have a level shift in addition to the shift register and the buffer.

In the gate signal side driving circuit 132, a gate signal from a shift register (not shown) is supplied to a buffer (not shown) and supplied to a corresponding gate signal line. The gate signal lines G1 to Gy are respectively connected to the gate electrodes of the pixel TFTs 104 of the pixels for one line, and the pixel TFTs 104 of all the pixels for one line must be turned on at the same time. Those capable of flowing a large current are used.

The number, configuration, and operation of the source signal line driving circuit and the gate signal line driving circuit are not limited to the configuration shown in this embodiment. As the image sensor used for the sensor-equipped display of the present invention, a known source signal line driving circuit and a known gate signal line driving circuit can be used.

In this embodiment, the pixel and sensor unit 101 may have the configuration shown in FIG. 8 or FIG. This embodiment is similar to the first embodiment or the third embodiment.
It is possible to implement in combination freely.

[Embodiment 5] In this embodiment, a method of manufacturing each TFT constituting a pixel and a sensor section on a substrate will be described in detail. First, as shown in FIG. 12A, a silicon oxide film and a silicon nitride film are formed on a glass substrate 701 such as barium borosilicate glass represented by Corning # 7059 glass or # 1737 glass, or aluminoborosilicate glass. A blocking layer 702 made of a film or an insulating film such as a silicon oxynitride film is formed.
For example, a plasma CVD method _{SiH 4, NH 3, N 2} O silicon oxynitride film 702a made from 10 to 20
0 nm (preferably 50-100 nm), and Si
Silicon oxynitride hydride film 7 made of H ₄ and N ₂ O
01b to 50 to 200 nm (preferably 100 to 150 n
m). Although the blocking layer 702 has a two-layer structure in this embodiment, the blocking layer 702 may have a single-layer structure of the insulating film or a structure in which two or more layers are stacked.

Semiconductor layers 703 to 707 divided into islands
Is to form a semiconductor film having an amorphous structure into a semiconductor film having a crystalline structure (hereinafter referred to as a crystalline semiconductor film) by heat treatment using a laser annealing method or a furnace annealing furnace. The island-shaped semiconductor layers 703 to 707 have a thickness of 25 to 80 nm (preferably 30 to 60 nm). The material of the crystalline semiconductor film is not limited, but is preferably formed of silicon or a silicon germanium (SiGe) alloy.

In order to form a crystalline semiconductor film by laser annealing, a pulse oscillation type or continuous emission type excimer laser, a YAG laser, or a YVO ₄ laser is used. A method is used in which laser light output from a laser oscillator is linearly condensed by an optical system and irradiated on a semiconductor film. Annealing conditions are appropriately selected by the practitioner. When an excimer laser is used, the pulse oscillation frequency is 30 Hz.
And a laser energy density of 100 to 400 mJ / cm ²
(Typically 200 to 300 mJ / cm ² ). Also, YA
When a G laser is used, the pulse oscillation frequency is set to 1 to 10 kHz using the second harmonic, and the laser energy density is set to 300 to 600 mJ / cm ² (typically 350 to 500 mJ / cm ² ).
cm ² ). Then, laser light condensed linearly with a width of 100 to 1000 μm, for example, 400 μm, is irradiated over the entire surface of the substrate, and the superposition rate (overlap rate) of the linear laser light at this time is set to 80 to 98%.

Next, a gate insulating film 708 covering the island-shaped semiconductor layers 702 to 707 is formed. Gate insulating film 708
Uses a plasma CVD method or a sputtering method and has a thickness of 4
The insulating film containing silicon is formed to have a thickness of 0 to 150 nm.
In this embodiment, a silicon oxynitride film is formed with a thickness of 120 nm. Needless to say, the gate insulating film 708 is not limited to such a silicon oxynitride film, and another insulating film containing silicon may be used as a single layer or a stacked structure.

Then, a first conductive film 709a and a second conductive film 709b for forming a gate electrode are formed over the gate insulating film 708. In this embodiment, the first conductive film 709a is formed of tantalum nitride or titanium by 50 to 100 nm.
The second conductive film 709b is formed with tungsten to a thickness of 100 to 300 nm. These materials are stable even in a heat treatment at 400 to 600 ° C. in a nitrogen atmosphere, and the resistivity does not significantly increase.

Next, as shown in FIG. 12B, masks 710 to 715 made of resist are formed, and a first etching process for forming a gate electrode is performed. Although there is no limitation on the etching method, preferably, the etching method is ICP (Inductively Co.).
upled Plasma: Inductively coupled plasma) etching method is used. A mixture of CF ₄ and Cl ₂ in an etching gas is used.
At a pressure of 5-2 Pa, preferably 1 Pa, 5
The plasma is generated by supplying 00 W RF (13.56 MHz) power. 100W R on substrate side (sample stage)
F (13.56 MHz) power is applied and a substantially negative self-bias voltage is applied. When CF ₄ and Cl ₂ are mixed, etching can be performed at substantially the same rate even in the case of a tungsten film, a tantalum nitride film, and a titanium film.

Under the above etching conditions, the end can be tapered due to the shape of the resist mask and the effect of the bias voltage applied to the substrate side. The angle of the tapered portion is set to 15 to 45 °. In order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased by about 10 to 20%. Since the selectivity of the silicon oxynitride film to tungsten is 2 to 4 (typically 3), the exposed surface of the silicon oxynitride film is etched by about 20 to 50 nm by over-etching. Thus, the first shape conductive layers 716 to 721 (the first conductive films 716 a to 721 a and the second conductive film 716 b) including the first conductive film and the second conductive film are formed by the first etching treatment.
To 721b). Reference numeral 722 denotes a gate insulating film, and a region not covered with the first shape conductive layer is 20 to 50.
It is etched by about nm and becomes thin.

Then, as shown in FIG.
To dope n-type impurities (donors). The doping is performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose is 1 × 10 ^{13 to} 5 × 10 ¹⁴ atoms / cm ² . n
An element belonging to Group 15 of the periodic table, typically, phosphorus (P) or arsenic (As) is used as an impurity element for imparting a pattern. In this case, the acceleration voltage is controlled (for example, 20 to 60 keV), and the first shape conductive layer is used as a mask. Thus, first impurity regions 723 to 727 are formed. For example, the concentration of the n-type impurity in the first impurity regions 725 to 729 is set to be in a range of 1 × 10 ²⁰ to 1 × 10 ²¹ atomic / cm ³ .

In the second etching process shown in FIG. 12 (D), similarly, using an ICP etching apparatus, CF ₄ , Cl _2, and O ₂ are mixed in an etching gas and a coil-type electrode is formed at a pressure of 1 Pa. A plasma is generated by supplying 500 W of RF power (13.56 MHz). 50 on the substrate side (sample stage)
RF (13.56 MHz) power of W is applied, and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched so that the tantalum nitride film or the titanium film as the first conductive layer is left. Thus, the second shape conductive layer 72 is formed.
8 to 733 (first conductive films 728a to 733a and second conductive films 728b to 733b) are formed. Reference numeral 739 denotes a gate insulating film, and a region which is not covered with the second shape conductive layers 728 to 733 is further etched by about 20 to 50 nm to reduce its thickness.

Next, a second doping process is performed. An n-type impurity (donor) is doped under a condition of a higher acceleration voltage with a lower dose than in the first doping process. For example, the acceleration voltage is set to 70 to 120 keV and 1 × 10 ¹³ / cm ²
12C, the second impurity region 7 is formed inside the first impurity region formed in the island-shaped semiconductor layer in FIG.
34 to 738 are formed. In this doping, the second shape conductive layers 728a to 733b are used as masks for impurity elements and the second shape conductive layers 728a to 733b are used.
Doping is performed so that the impurity element is added to the region below “a”. This impurity region is formed in the second shape conductive layer 72.
Since 8a to 733a remain with substantially the same thickness, the difference in the concentration distribution in the direction along the conductive layer of the second shape is small, and the concentration is 1 × 10 ¹⁷ to 1 × 10 ¹⁹ atoms / cm ³ . To form an n-type impurity (donor).

Then, as shown in FIG.
Is performed, and the gate insulating film is etched. As a result, the second shape conductive layers 728a to 728a-7
33a is also etched, and the end portion recedes and becomes smaller,
Third shape conductive layers 740 to 745 (first conductive film 74
0a to 745a and second conductive films 740b to 745b) are formed. Reference numeral 746 denotes a remaining gate insulating film, which may be further etched to expose the surface of the semiconductor layer.

For a p-channel type TFT, FIG.
As shown in FIG. 7B, resist masks 758 to 760 are formed, and a p-type impurity (acceptor) is doped into an island-shaped semiconductor layer forming a p-channel TFT. The p-type impurity (acceptor) is selected from elements belonging to Group 13 and typically uses boron (B). Third impurity regions 767a, 767b, 767c, 768a, 768
b, 768c has an impurity concentration of 2 × 10 ²⁰ to 2 × 10 ²¹ at
oms / cm ³ . Although phosphorus is added to the impurity region 758, boron is added at a concentration 1.5 to 3 times that of the impurity region 758 to reverse the conductivity type.

Through the above steps, an impurity region is formed in the semiconductor layer. After that, in a step illustrated in FIG. 13C, masks 769 and 770 are formed using resist, and the third conductive layer 743 over the semiconductor layer 706 where a photodiode is formed is removed. Third shape conductive layers 740, 74
1, 742, and 744 serve as gate electrodes, and the third shape conductive layer 745 serves as a capacitor wiring.

Next, as shown in FIG. 14A, a first interlayer insulating film 771 made of a silicon nitride film or a silicon oxynitride film is formed by a plasma CVD method. Then, a step of activating the impurity element added to each of the island-shaped semiconductor layers is performed for the purpose of controlling the conductivity type. Activation is preferably performed by a thermal annealing method using a furnace annealing furnace. Alternatively, a laser annealing method or a rapid thermal annealing method (RTA method) can be applied. In the thermal annealing method, the oxygen concentration is 400 to 700 in a nitrogen atmosphere of 1 ppm or less, preferably 0.1 ppm or less.
C., typically at 500 to 600.degree. C. In this embodiment, the heat treatment is performed at 500.degree. C. for 4 hours. As a result, hydrogen in the protective insulating film 759 is released and diffused into the island-shaped semiconductor film, so that hydrogenation can be performed at the same time.

For hydrogenation, heat treatment may be performed at 300 to 450 ° C. for 1 to 12 hours in an atmosphere containing 3 to 100% hydrogen. In any case, this is a step of terminating dangling bonds in the semiconductor layer with hydrogen. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) can be performed.

A contact hole is formed in the first interlayer insulating film 771, and aluminum (Al), titanium (T
i), using tantalum (Ta) or the like, a sensor output wiring 772, a connection wiring 773, a sensor power supply line 775,
Connection wiring 777, common connection line 779, source signal line 7
80, a drain wiring 781 is formed.

Then, a passivation film 782 and a second interlayer insulating film 783 are formed on these wirings.
The passivation film 782 is a silicon nitride film having a thickness of 50 nm. Further, a second interlayer insulating film 783 made of an organic resin is formed to a thickness of about 1000 nm. As the organic resin film, polyimide, acrylic, polyimide amide, or the like can be used. The advantages of using an organic resin film include that the film formation method is simple, the parasitic capacitance can be reduced because the relative dielectric constant is low, and the flatness is excellent. Note that an organic resin film other than those described above can be used. Here, it is formed by baking at 300 ° C. using a type of polyimide which is thermally polymerized after being applied to the substrate.

Next, as shown in FIG. 14B, a contact hole reaching the drain wiring 781 is formed in the second interlayer insulating film 783 and the passivation film 782.
The pixel electrode 784 is formed to a thickness of 400 to 1000 nm. The pixel electrode is formed of a highly reflective conductive material such as aluminum or silver. In a reflection-type liquid crystal display device, it is preferable that fine unevenness is formed on the surface of the pixel electrode so that light reflected on this surface is scattered. In addition, the opening 785 is formed on the photodiode 804 so that light enters.

As described above, the buffer TFT 80
1, selection TFT 802, reset TFT 803, photodiode 804, pixel TFT 805, storage capacitor 8
06 can be formed.

The buffer TFT 801 is an n-channel type TFT.
FT, a channel formation region 810, a second impurity region 811 (Gate Overlapped Drain: GOLD region) that overlaps with a gate electrode including a third-shaped conductive layer 728,
Second impurity region 812 formed outside gate electrode
(Lightly Doped Drain: LDD region) and first impurity region 81 functioning as a source region or a drain region
Three.

The selection TFT 802 is also an n-channel TFT
And the second impurity region 8 overlapping the channel formation region 814 and the gate electrode formed of the third shape conductive layer 729.
15, a second impurity region 816 formed outside the gate electrode and a first impurity region 817 functioning as a source region or a drain region.

The reset TFT 803 is a p-channel type T
FT, and a third impurity region 819 functioning as a channel formation region 818 and a source or drain region
To 821.

The photodiode 804 has third regions 826 to 828 to which p-type impurities are added, first and second impurity regions 825 and 824 to which n-type impurities are added, and no impurities. Intrinsic region 822
And has a so-called pin type structure. Further, the first impurity region 825 forms a contact with the connection wiring 777 and is connected to the drain side of the reset TFT 803. One third impurity region 828 forms a contact with the common wiring 779.

The pixel TFT 805 has a channel forming region 8
29. Third shape conductive layer 732 forming gate electrode
The second impurity region 830 (GOLD region) overlapping the second impurity region 831 formed outside the gate electrode
(LDD region) and first impurity regions 832, 833, and 834 functioning as a source region or a drain region. Further, the semiconductor layer 835 functioning as one electrode of the storage capacitor 806 is formed continuously from the first impurity region, and a region to which an impurity is added at the same concentration as the second impurity region is provided at an end portion. 836 and 837 are formed.

FIG. 15 shows a top view of such a pixel.
In FIG. 15, the line AA ′ and the line BB ′ correspond to the line AA ′ and the line BB ′ shown in FIG. 14B, respectively. Since the liquid crystal display device applied to the present invention is of a reflection type, even if a TFT is formed below a pixel electrode, the aperture ratio is not impaired.

Of course, an opening is provided in the portion where the photosensor is provided. However, by forming the pixel electrode 784 so as to overlap with the source wiring 780, the loss of the opening ratio can be compensated. In the pixel structure described in this embodiment, the area of a pixel electrode can be increased, and the aperture ratio can be improved even when a photosensor is provided for each pixel.

The present invention is not limited to the manufacturing method described above, but can be manufactured using a known method. This embodiment can be implemented in any combination with Embodiments 1 to 4.

[Embodiment 6] A photosensor provided for each pixel can be formed using an amorphous semiconductor. In this embodiment, differences in that case will be described with reference to FIG.

FIG. 16A shows that the first passivation film 840 is made of a silicon nitride film having a thickness of 50 to 100 nm after the steps described with reference to FIG.
Formed to a thickness of A lower electrode 841 of a photoelectric conversion layer is formed over the first passivation film. Lower electrode 841
0 may be formed of aluminum, titanium, or the like. The photoelectric conversion layer is formed by an n-type amorphous silicon film 8 by a plasma CVD method.
42 to 20 to 50 nm, intrinsic (i-type) amorphous silicon film 8
43 is 500-1000 nm, p-type amorphous silicon film 84
4 is formed in a three-layer structure sequentially deposited to a thickness of 10 to 20 nm. Further, a transparent conductive film 845 made of indium oxide, zinc oxide, or the like is formed. Thus, a photodiode can be formed using the lower electrode, the two photomasks for forming the pattern of the photoelectric conversion layer, and the pattern of the transparent conductive film.

Then, a first interlayer insulating film 846, a sensor output wiring 851, a connection wiring 852, a sensor power supply line 854, a connection wiring 856, a common connection line 857, a source signal line 858, and a drain wiring 859 are formed. FIG.
(B), a second passivation film 860 and a second interlayer insulating film 861 are formed above these wirings. Second
Passivation film 860 is a silicon nitride film of 50 nm
Formed with a thickness of The second interlayer insulating film 861 made of an organic resin is formed to a thickness of about 1000 nm.

Further, a pixel electrode 862 is formed on the second interlayer insulating film 861 to a thickness of 400 to 1000 nm. Opening 86
Reference numeral 3 is formed on the photodiode 864 so that light is incident thereon. The photodiode 864 has a pin-type structure using amorphous silicon and has high light sensitivity and a wide contrast ratio (dynamic range), and thus can be suitably used for the photosensor of the present invention. This embodiment can be implemented by freely combining with Embodiments 1 to 4.

[Embodiment 7] In this embodiment, a process of manufacturing an active matrix liquid crystal display device from the TFT array substrate manufactured in Embodiment 5 will be described. First, Example 5
After the TFT array substrate in the state shown in FIG. 14B is obtained, a columnar spacer 870 is formed as shown in FIG. Such a columnar spacer is formed at a predetermined position by forming a photosensitive resin film, exposing and developing. The material of the photosensitive resin film is not limited. For example, NN700 manufactured by JSR Co., Ltd. is applied by a spinner, and is cured by heating at 150 to 200 ° C. using a clean oven. The shape of the spacer produced in this way can be varied depending on the conditions of the exposure and development processing,
Preferably, the height of the columnar spacer 870 is 2 to 7 μm,
When the thickness is preferably 4 to 6 μm and the shape is columnar and the top is flat, the mechanical strength of the liquid crystal display panel can be secured when the opposing substrates are combined. An alignment film 873 is formed thereon, and rubbing is performed.

After forming a counter electrode 875 on the counter substrate 874 and forming an alignment film 876, a rubbing process is performed. Then, the TFT array substrate and the counter substrate are bonded with a sealant (not shown). After that, a liquid crystal material is injected between the two substrates to form a liquid crystal layer 877. A known liquid crystal material may be used as the liquid crystal material. When a normally white liquid crystal that displays white when no driving voltage is applied is used, light can always enter the photodiode from an opening provided in the pixel electrode. Thus, FIG.
Is completed. Further, an active matrix liquid crystal display device can be manufactured in the same manner from the TFT array substrate described in Embodiment 6. The liquid crystal display device manufactured here can be applied to the liquid crystal display device described in Embodiment 1.

[Embodiment 8] This embodiment describes a method of using the present invention. The present invention may not be used when personal authentication does not require advanced authentication up to individual information. For this reason, the presence or absence of authentication can be selected, for example,
It is also possible to make it possible to selectively perform authentication only when money is accompanied by expensive movement. It can be used in accordance with the situation of the business partner, or can be used only when the numerical value exceeds a certain value by setting a judgment criterion on the control microcomputer of the portable information device in advance. Also, the authentication result can be transmitted to the central processing unit via the Internet only when the authentication result is necessary.

[0110]

The personal digital assistant according to the present invention can perform personal authentication by an image sensor provided inside a portable information terminal device, and can input a conventional numerical value (personal identification number).
It is possible to have high reliability and simplicity with respect to the authentication work of inputting the password.

Further, by using a liquid crystal display device having a built-in image sensor and installing a display portion for displaying information such as characters and images and an image sensor portion in the same portion, the portable information communication device can be downsized. are doing. Further, it is possible to save the user from having to input a personal identification number or the like every time the user is authenticated. As a supplementary function, if predetermined data is stored in the storage device,
It is also possible to judge the user's fortune and good luck. Further, a hint such as a halt of the transaction can be displayed on the liquid crystal display device based on the information.

[Brief description of the drawings]

FIG. 1 illustrates a configuration of a reflection type liquid crystal display device having a built-in image sensor, an image display method, and an image image reading method.

FIG. 2 is an authentication flow of the personal authentication system of the present invention.

FIG. 3 is an external view of a portable information communication device according to the present invention.

FIG. 4 is a diagram showing a method of using the portable information communication device of the present invention.

FIG. 5 is a diagram showing a method of using the portable information communication device of the present invention.

FIG. 6 is a block diagram showing the structure of a display with a built-in image sensor.

FIG. 7 is a block diagram showing the structure of a display with a built-in image sensor.

FIG. 8 is a circuit diagram of a pixel and a sensor unit.

FIG. 9 is a circuit diagram of a pixel.

FIG. 10 is a circuit diagram of a pixel and a sensor unit.

FIG. 11 is a block diagram showing the structure of a display with a built-in image sensor.

FIG. 12 is a diagram showing a manufacturing process of a display with a built-in image sensor.

FIG. 13 is a diagram showing a manufacturing process of a display with a built-in image sensor.

FIG. 14 is a diagram showing a manufacturing process of a display with a built-in image sensor.

FIG. 15 is a top view illustrating a structure of a pixel in an active matrix liquid crystal display device provided with an image sensor.

FIG. 16 is a diagram illustrating a process for forming a photosensor with an amorphous silicon pin diode.

FIG. 17 is a cross-sectional view of an active matrix liquid crystal display device.

FIG. 18 is a diagram of a conventional mobile phone.

FIG. 19 is a flow of a conventional personal authentication.

FIG. 20 is a diagram showing the position of a palm print to be read. 3

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hideomi Suzawa 398 Hase, Hase, Atsugi-shi, Kanagawa Prefecture (72) Koji Ono 398 Hase, Hase, Atsugi-shi, Kanagawa, Japan 72) Inventor Toru Takayama 398 Hase, Atsugi-shi, Kanagawa F-term in Semiconductor Energy Laboratory Co., Ltd.

Claims (24)

[Claims] 1. An identification system using a portable information communication device having a liquid crystal display device, wherein the liquid crystal display device has a built-in image sensor, reads individual information of a user by the image sensor, and A personal authentication system characterized by performing personal authentication based on information. 2. The personal authentication system using a portable information communication device having a liquid crystal display device, wherein the liquid crystal display device has a photodiode provided in each pixel, and a user uses an image sensor constituted by the photodiode. A personal authentication system, wherein the personal information is read and personal authentication is performed based on the individual information. 3. A reflection type liquid crystal display device having a built-in image sensor, a storage device, a function of comparing individual information read by the image sensor with individual information stored in the storage device, and a function of comparing the comparison data. Means for transmitting to a central processing unit. 4. A reflection-type liquid crystal display device having a built-in image sensor, a storage device, and comparing individual information read by the image sensor with individual information stored in the storage device to determine whether the user is the user. A personal authentication system comprising: a function of making a determination; and means for transmitting a result of the determination to a central processing unit. 5. The personal authentication system according to claim 1, wherein the personal authentication is performed simultaneously with turning on the power of the portable information communication device. 6. The personal authentication system according to claim 1, wherein a palm print or a fingerprint is used as the individual information. 7. The personal identification system according to claim 6, wherein the palm print uses the whole or a part of a palm. 8. An identity authentication system using a portable information communication device having a liquid crystal display device having a built-in image sensor, wherein the image sensor reads individual information of a user and transmits the individual information via the Internet. Personal authentication system characterized by the following. 9. An identity authentication system using a portable information communication device having a liquid crystal display device having a built-in image sensor, wherein the image sensor reads individual information of a user, and the individual information is read by the portable information communication device or An identity authentication system characterized by determining whether or not transmission is necessary according to the degree of necessity set for a communication destination, and transmitting only via the Internet when necessary. 10. A liquid crystal display device having a built-in image sensor, a storage device, and individual information read by the image sensor and individual information stored in the storage device are compared to determine whether the user is the user. A personal authentication system comprising: a function of performing authentication; and a function of transmitting an authentication result to a central processing unit via the Internet. 11. The personal authentication system according to claim 8, wherein said liquid crystal display device is a reflection type liquid crystal display device. 12. A personal authentication method using a portable information communication device having a liquid crystal display device, wherein the liquid crystal display device has a built-in image sensor, reads individual information of a user by the image sensor, and A personal authentication method characterized by performing personal authentication based on information. 13. A personal authentication method using a portable information communication device having a liquid crystal display device, wherein the liquid crystal display device has a photodiode provided in each pixel and a user using an image sensor constituted by the photodiode. A personal authentication method characterized by reading the individual information of the personal computer and performing personal authentication based on the individual information. 14. The method according to claim 12, wherein
The personal identification method, wherein the liquid crystal display device is a reflective liquid crystal display device. 15. The method according to claim 12, wherein
A personal authentication method, wherein the personal authentication work is controlled by operating keys on the portable information communication device. 16. The method according to claim 12, wherein
A personal authentication method, wherein the personal authentication is performed simultaneously with turning on the power of the portable information communication device. 17. The method according to claim 12, wherein
A personal identification method, wherein a palm print (palm) or a fingerprint is used as the individual information of the user. 18. The personal authentication method according to claim 17, wherein the palm print uses the whole or a part of a palm. 19. An identity authentication method using a portable information communication device having a liquid crystal display device having a built-in image sensor, wherein the image sensor reads individual information of a user, and the individual information is centrally processed via the Internet. A personal authentication method characterized by transmitting to a device. 20. A personal authentication method using a portable information communication device having a liquid crystal display device having a built-in image sensor, wherein the image sensor reads individual information of a user, and the individual information is read by the portable information communication device or A personal authentication method characterized by determining whether or not transmission is necessary according to the degree of necessity set in a communication destination, and transmitting it to a central processing unit via the Internet only when necessary. 21. The method according to claim 19, wherein
The personal identification method, wherein the liquid crystal display device is a reflective liquid crystal display device. 22. A portable telephone device provided with a liquid crystal display device and a flash memory, wherein the liquid crystal display device is provided with a photodiode for each pixel, an image sensor is constituted by the photodiode, and the flash memory is Is a mobile telephone device in which individual information of a user is stored. 23. A mobile phone device comprising a liquid crystal display device and a flash memory, wherein the liquid crystal display device is provided with a photodiode at each pixel, and individual information read by an image sensor constituted by the photodiode. And a means for comparing the individual information of the user with the individual information stored in the flash memory. 24. The method according to claim 22, wherein
The mobile phone device, wherein the liquid crystal display device is a reflective liquid crystal display device.